JP5088025B2 - ORGANIC ELECTROLUMINESCENT MATERIAL, ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE - Google Patents
ORGANIC ELECTROLUMINESCENT MATERIAL, ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE Download PDFInfo
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- JP5088025B2 JP5088025B2 JP2007183138A JP2007183138A JP5088025B2 JP 5088025 B2 JP5088025 B2 JP 5088025B2 JP 2007183138 A JP2007183138 A JP 2007183138A JP 2007183138 A JP2007183138 A JP 2007183138A JP 5088025 B2 JP5088025 B2 JP 5088025B2
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- H—ELECTRICITY
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- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
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Abstract
Description
本発明は新たな化合物、およびこれを含有する有機エレクトロルミネッセンス素子及びこれを用いた表示装置、照明装置に関する。 The present invention relates to a new compound, an organic electroluminescence element containing the compound, a display device using the same, and an illumination device.
従来、発光型の電子ディスプレイデバイスとして、エレクトロルミネッセンスディスプレイ(以下、ELDという)がある。ELDの構成要素としては、無機エレクトロルミネッセンス素子や有機エレクトロルミネッセンス素子(以下、有機EL素子という)が挙げられる。無機エレクトロルミネッセンス素子は平面型光源として使用されてきたが、発光素子を駆動させるためには交流の高電圧が必要である。有機EL素子は発光する化合物を含有する発光層を陰極と陽極で挟んだ構成を有し、発光層に電子及び正孔を注入して、再結合させることにより励起子(エキシトン)を生成させ、このエキシトンが失活する際の光の放出(蛍光・リン光)を利用して発光する素子であり、数V〜数十V程度の電圧で発光が可能であり、更に自己発光型であるために視野角に富み、視認性が高く、薄膜型の完全固体素子であるために省スペース、携帯性等の観点から注目されている。 Conventionally, as a light-emitting electronic display device, there is an electroluminescence display (hereinafter referred to as ELD). Examples of constituent elements of ELD include inorganic electroluminescent elements and organic electroluminescent elements (hereinafter referred to as organic EL elements). Inorganic electroluminescent elements have been used as planar light sources, but an alternating high voltage is required to drive the light emitting elements. An organic EL device has a structure in which a light emitting layer containing a compound that emits light is sandwiched between a cathode and an anode, injects electrons and holes into the light emitting layer, and recombines them to generate excitons (exciton). It is an element that emits light by using light emission (fluorescence / phosphorescence) when this exciton is deactivated, and can emit light at a voltage of several volts to several tens of volts, and is also self-luminous. In addition, it is attracting attention from the viewpoints of space saving, portability and the like because it is a thin film type complete solid element with a wide viewing angle and high visibility.
しかしながら、今後の実用化に向けた有機EL素子においては、更に低消費電力で効率よく高輝度に発光する有機EL素子の開発が望まれている。 However, in organic EL elements for practical use in the future, development of organic EL elements that emit light efficiently and with high luminance with lower power consumption is desired.
特許第3093796号公報では、スチルベン誘導体、ジスチリルアリーレン誘導体またはトリススチリルアリーレン誘導体に微量の蛍光体をドープし、発光輝度の向上、素子の長寿命化を達成している。また、8−ヒドロキシキノリンアルミニウム錯体をホスト化合物として、これに微量の蛍光体をドープした有機発光層を有する素子(例えば、特開昭63−264692号公報)、8−ヒドロキシキノリンアルミニウム錯体をホスト化合物として、これにキナクリドン系色素をドープした有機発光層を有する素子(例えば、特開平3−255190号公報)等が知られている。 In Japanese Patent No. 3093796, a small amount of a phosphor is doped into a stilbene derivative, a distyrylarylene derivative or a tristyrylarylene derivative to achieve an improvement in light emission luminance and a longer device lifetime. Further, an element having an organic light-emitting layer in which an 8-hydroxyquinoline aluminum complex is used as a host compound and a small amount of phosphor is doped thereto (for example, JP-A 63-264692), and an 8-hydroxyquinoline aluminum complex is used as a host compound. For example, an element having an organic light emitting layer doped with a quinacridone dye (for example, JP-A-3-255190) is known.
以上のように、励起一重項からの発光を用いる場合、一重項励起子と三重項励起子の生成比が1:3であるため発光性励起種の生成確率が25%であり、光の取り出し効率が約20%であるため、外部取り出し量子効率(η)の限界は5%とされている。 As described above, when light emission from excited singlet is used, the generation ratio of singlet excitons and triplet excitons is 1: 3, and thus the generation probability of luminescent excited species is 25%. Since the efficiency is about 20%, the limit of the external extraction quantum efficiency (η) is set to 5%.
ところが、プリンストン大より励起三重項からのリン光発光を用いる有機EL素子の報告(M.A.Baldo et al.,Nature、395巻、151〜154頁(1998年))がされて以来、室温でリン光を示す材料の研究が活発になってきている。 However, since Princeton University reported on an organic EL device using phosphorescence emission from an excited triplet (MA Baldo et al., Nature, 395, 151-154 (1998)), Research on materials that exhibit phosphorescence has become active.
例えば、M.A.Baldo et al.,Nature、403巻、17号、750〜753頁(2000年)、また米国特許第6,097,147号明細書等にも開示されている。 For example, M.M. A. Baldo et al. , Nature, 403, 17, 750-753 (2000), US Pat. No. 6,097,147, and the like.
励起三重項を使用すると、内部量子効率の上限が100%となるため励起一重項の場合に比べて原理的に発光効率が4倍となり、冷陰極管とほぼ同等の性能が得られる可能性があることから照明用途としても注目されている。 When the excited triplet is used, the upper limit of the internal quantum efficiency is 100%. In principle, the luminous efficiency is four times that of the excited singlet, and there is a possibility that almost the same performance as a cold cathode tube can be obtained. Therefore, it is attracting attention as a lighting application.
例えば、S.Lamansky et al.,J.Am.Chem.Soc.,123巻、4304頁(2001年)等においては、多くの化合物がイリジウム錯体系等重金属錯体を中心に合成検討されている。 For example, S.M. Lamansky et al. , J .; Am. Chem. Soc. , 123, 4304 (2001), etc., many compounds are being studied for synthesis centering on heavy metal complexes such as iridium complexes.
また、前述のM.A.Baldo et al.,Nature、403巻、17号、750〜753頁(2000年)においては、ドーパントとしてトリス(2−フェニルピリジン)イリジウムを用いた検討がされている。 In addition, the aforementioned M.I. A. Baldo et al. , Nature, 403, 17, 750-753 (2000), studies have been made using tris (2-phenylpyridine) iridium as a dopant.
その他、M.E.Tompson等は、The 10th International Workshop on Inorganic and Organic Electroluminescence(EL’00、浜松)において、ドーパントとしてL2Ir(acac)、例えば、(ppy)2Ir(acac)を、またMoon−Jae Youn.0g、Tetsuo Tsutsui等は、やはりThe 10th International Workshop on Inorganic and Organic Electroluminescence(EL’00、浜松)において、ドーパントとしてトリス(2−(p−トリル)ピリジン)イリジウム(Ir(ptpy)3),トリス(ベンゾ[h]キノリン)イリジウム(Ir(bzq)3)等を用いた検討を行っている(なおこれらの金属錯体は一般にオルトメタル化イリジウム錯体と呼ばれている。)。 In addition, M.M. E. Thompson et al., In The 10th International Works on Inorganic and Organic Electroluminescence (EL'00, Hamamatsu), used L 2 Ir (acac), for example, (ppy) 2 Ir (acac), e. 0 g, Tetsuo Tsutsui, etc., again The 10th International Workshop on Inorganic and Organic Electroluminescence (EL'00, Hamamatsu), the dopant as tris (2-(p-tolyl) pyridine) iridium (Ir (ptpy) 3), tris ( Studies using benzo [h] quinoline) iridium (Ir (bzq) 3 ) and the like are being conducted (note that these metal complexes are generally called orthometalated iridium complexes).
また、前記S.Lamansky et al.,J.Am.Chem.Soc.,123巻、4304頁(2001年)や特許文献4等においても、各種イリジウム錯体を用いて素子化する試みがされている。 In addition, the S. Lamansky et al. , J .; Am. Chem. Soc. , 123, 4304 (2001), Patent Document 4 and the like, attempts have been made to form devices using various iridium complexes.
また高い発光効率を得るために、The 10th International Workshop on Inorganic and Organic Electroluminescence(EL’00、浜松)では、Ikai等はホール輸送性の化合物をリン光性化合物のホストとして用いている。また、M.E.Tompson等は各種電子輸送性材料をリン光性化合物のホストとして、これらに新規なイリジウム錯体をドープして用いている。 In order to obtain high luminous efficiency, in the 10th International Works on Inorganic and Organic Electroluminescence (EL'00, Hamamatsu), Ikai et al. Uses a hole transporting compound as a host of a phosphorescent compound. Also, M.M. E. Thompson et al. Use various electron transporting materials as a host of phosphorescent compounds, doped with a novel iridium complex.
例えば、特開2002−332291号公報、同2002−332292号公報、同2002−338588号公報、同2002−226495号公報、同2002−234894号公報、Inorganic Chemistry,第41巻、第12号、3055〜3066頁(2002年)等には、中心金属をイリジウムの代わりに白金としたオルトメタル化錯体も注目されている。この種の錯体に関しては、配位子に特徴を持たせた例が多数知られている。 For example, JP 2002-332291 A, 2002-332292, 2002-338588, 2002-226495, 2002-234894, Inorganic Chemistry, Vol. 41, No. 12, 3055. ˜3066 (2002), etc. are also drawing attention to orthometalated complexes in which the central metal is platinum instead of iridium. With respect to this type of complex, many examples are known in which ligands are characterized.
いずれの場合も発光素子とした場合の発光輝度や発光効率は、その発光する光がリン光に由来することから従来の素子に比べ大幅に改良されるものであるが、素子の発光寿命については従来の素子よりも低いという問題点があった。このように、リン光性の高効率の発光材料は、発光波長の短波化と素子の発光寿命の改善が難しく、実用に耐えうる性能を十分に達成できていないのが現状である。 In either case, the light emission brightness and light emission efficiency of the light emitting device are greatly improved compared to conventional devices because the emitted light is derived from phosphorescence. There was a problem that it was lower than the conventional element. As described above, it is difficult for phosphorescent highly efficient light-emitting materials to shorten the light emission wavelength and improve the light emission lifetime of the device, and the performance that can withstand practical use cannot be sufficiently achieved.
また、国際公開第02/15645号パンフレット、特開2003−123982号公報、同2002−117978号公報、同2003−146996号公報、国際公開第04/016711号パンフレット、Inorganic Chemistry,第41巻、第12号、3055〜3066頁(2002年)、Aplied Physics Letters,第79巻、2082頁(2001年)、Aplied Physics Letters,第83巻、3818頁(2003年)、New Journal of Chemistry,第26巻、1171頁(2002年)には、波長の短波化に関しては、これまでフェニルピリジンにフッ素原子、トリフルオロメチル基、シアノ基等の電子吸引基を置換基として導入すること、配位子としてピコリン酸やピラザボール系の配位子を導入することが知られているが、これらの配位子では発光材料の発光波長が短波化して青色を達成し、高効率の素子を達成できる一方、素子の発光寿命は大幅に劣化するため、そのトレードオフの改善が求められていた。 Also, International Publication No. 02/15645 pamphlet, Japanese Patent Application Laid-Open No. 2003-123982, Japanese Patent Publication No. 2002-117978, Japanese Patent Publication No. 2003-146996, International Publication No. 04/016711 pamphlet, Inorganic Chemistry, Vol. 41, No. 12, 3055-3066 (2002), Applied Physics Letters, 79, 2082 (2001), Applied Physics Letters, 83, 3818 (2003), New Journal of Chemistry, 26. 1171 (2002), regarding the shortening of the wavelength, an electron withdrawing group such as a fluorine atom, a trifluoromethyl group, a cyano group or the like has been introduced into phenylpyridine as a substituent. It is known that picolinic acid and pyrazabole-based ligands are introduced as ligands. However, with these ligands, the emission wavelength of the luminescent material is shortened to achieve blue, and a highly efficient device is achieved. On the other hand, since the light emission lifetime of the device is greatly deteriorated, improvement of the trade-off has been demanded.
リン光性の高効率の発光材料は、発光波長の短波化と素子の発光寿命の改善が難しく、実用に耐えうる性能を十分に達成できていないのが現状である。 A phosphorescent high-efficiency light-emitting material is difficult to shorten the emission wavelength and improve the light-emission lifetime of the device, and has not been able to achieve sufficient performance for practical use.
有機EL材料の寿命を改善する手段の一つとして、発光性ドーパントの構造に着目した開発が進められてきた結果、実用に耐えうる可能性のある構造が見つかりつつある。しかしながら、ドーパントへの置換基の導入など構造の小さな変更が、寿命に与える影響が大きく、解決すべき課題が残されている。 As a means for improving the lifetime of the organic EL material, development focusing on the structure of the luminescent dopant has been promoted, and as a result, a structure that can withstand practical use is being found. However, small changes in structure, such as introduction of substituents into dopants, have a significant effect on lifetime, and there remains a problem to be solved.
これまで、ドーパントの基本骨格に置換基を導入することで、波長のコントロールや寿命の改善を図るアプローチが多かったが、必ずしも成功しているとはいえない。そこで、ドーパント化合物と共に発光層に用いられるホスト材料の構造に着目し、ホスト化合物の部分構造と類似の構造をドーパントの部分構造として導入したところ、幾つかの構造で寿命が改善される傾向が見られた。特に含窒素複素環を含む縮合環をドーパントの部分構造として、導入することによって、その傾向が顕著であることを見出した。 Until now, there have been many approaches to control the wavelength and improve the lifetime by introducing a substituent into the basic skeleton of the dopant, but it cannot be said to have been successful. Therefore, paying attention to the structure of the host material used in the light-emitting layer together with the dopant compound, and introducing a structure similar to the partial structure of the host compound as the partial structure of the dopant, there is a tendency that the lifetime is improved in some structures. It was. In particular, it has been found that the tendency is remarkable by introducing a condensed ring containing a nitrogen-containing heterocycle as a partial structure of the dopant.
この傾向は、ドーパントの部分構造に特定の縮合環を導入することにより、ホスト化合物との間で良好な相互作用が生じたためであると考えられ、特に酸素原子または硫黄原子を含む縮合環、更にはベンゾフラン誘導体またはジベンゾフラン誘導体の導入で、ホストとの良好な相互作用が顕著になるためであると考えている。 This tendency is considered to be due to a good interaction with the host compound by introducing a specific condensed ring into the partial structure of the dopant, in particular, a condensed ring containing an oxygen atom or a sulfur atom, Is believed to be due to the introduction of a benzofuran derivative or a dibenzofuran derivative, resulting in significant interaction with the host.
これまで、複素芳香族環をドーパント化合物の部分構造として導入する例は、特許文献1、特許文献2等等にあり、ジベンゾフラン誘導体をドーパント化合物の部分構造として導入する例としては、特許文献3に開示があるが、導入位置に関する具体的な記載や、導入効果についての具体的な記載は一切無く、本発明の独自性が損なわれることは無い。また、置換基として考えた場合の酸素原子または硫黄原子を含む縮合環の式量と素子寿命に関する知見については、これまで示唆されたことは無く、全く新しい知見である。
本発明の目的は、新規化合物、該新規化合物を含み、外部取り出し量子効率が高く、且つ、長寿命である有機EL素子、照明装置およびディスプレイ装置を提供することである。 An object of the present invention is to provide a novel compound, an organic EL element, an illumination device, and a display device that contain the novel compound, have a high external extraction quantum efficiency, and have a long lifetime.
本発明の上記目的は下記1〜21の構成により達成される。
The above object of the present invention is achieved by the following
1.下記一般式(1)で表される部分構造を含む化合物の少なくとも1種を含有することを特徴とする有機エレクトロルミネッセンス材料。 1. An organic electroluminescent material comprising at least one compound containing a partial structure represented by the following general formula (1).
(式中、R1〜R4は水素原子または置換基を表し、R1またはR2の少なくとも一つはベンゾフラン環、ジベンゾフラン環、ベンゾチオフェン環またはジベンゾチオフェン環を部分構造として持つ式量100以上の置換基を表し、n1は0〜4の整数を表し、Qは芳香族炭化水素環を形成するのに必要な原子群を表し、Mは遷移金属を表す。但し、n1が0のとき、R 2 は、ベンゾフラン環、ジベンゾフラン環、ベンゾチオフェン環またはジベンゾチオフェン環を部分構造として持つ式量100以上の置換基である。)
2.前記1に記載の一般式(1)において、R2で表される置換基が、一般式(2)で表されることを特徴とする有機エレクトロルミネッセンス材料。
(Wherein R 1 to R 4 represent a hydrogen atom or a substituent, and at least one of R 1 or R 2 has a benzofuran ring, a dibenzofuran ring, a benzothiophene ring, or a dibenzothiophene ring as a partial structure in a formula amount of 100 or more. N1 represents an integer of 0 to 4, Q represents an atomic group necessary to form an aromatic hydrocarbon ring, and M represents a transition metal, provided that when n1 is 0, R 2 is a substituent having a formula weight of 100 or more having a benzofuran ring, a dibenzofuran ring, a benzothiophene ring or a dibenzothiophene ring as a partial structure.
2. 2. The organic electroluminescent material according to the above general formula (1), wherein the substituent represented by R 2 is represented by the general formula (2).
(式中、R5は水素原子または置換基を表し、n2は0〜5の整数を表す。)
3.前記1に記載の一般式(1)において、R2で表される置換基が、一般式(3)で表されることを特徴とする有機エレクトロルミネッセンス材料。
(In the formula, R 5 represents a hydrogen atom or a substituent, and n2 represents an integer of 0 to 5. )
3. 2. The organic electroluminescent material according to the general formula (1), wherein the substituent represented by R 2 is represented by the general formula (3).
(式中、R6は水素原子または置換基を表し、n3は0〜3の整数を表す。)
4.前記1に記載の一般式(1)において、R1〜R4で表される置換基の式量の総和が1000〜10000であることを特徴とする有機エレクトロルミネッセンス材料。
(In the formula, R 6 represents a hydrogen atom or a substituent, and n3 represents an integer of 0 to 3.)
4). 2. The organic electroluminescent material according to the general formula (1), wherein the sum of the formula weights of the substituents represented by R 1 to R 4 is 1000 to 10,000.
5.前記1に記載の一般式(1)において、R1〜R4で表される置換基の式量の総和が1500〜5000であることを特徴とする有機エレクトロルミネッセンス材料。 5. 2. The organic electroluminescent material according to the above general formula (1), wherein the sum of the formula weights of the substituents represented by R 1 to R 4 is 1500 to 5000.
6.前記1に記載の一般式(1)において、R1〜R4で表される置換基、前記2に記載の一般式(2)において、R5で表される置換基、または前記3に記載の一般式(3)において、R6で表される置換基、の少なくとも一つがベンゾフラン環誘導体を部分構造として含有することを特徴とする有機エレクトロルミネッセンス材料。 6). In the general formula (1) described in 1 above, the substituent represented by R 1 to R 4 , in the general formula (2) described in 2 above, the substituent represented by R 5 , or 3 above In the general formula (3), at least one of the substituents represented by R 6 contains a benzofuran ring derivative as a partial structure.
7.前記1に記載の一般式(1)において、R1〜R4で表される置換基、前記2に記載の一般式(2)において、R5で表される置換基、または前記3に記載の一般式(3)において、R6で表される置換基、の少なくとも一つがジベンゾフラン環誘導体を部分構造として含有することを特徴とする有機エレクトロルミネッセンス材料。 7). In the general formula (1) described in 1 above, the substituent represented by R 1 to R 4 , in the general formula (2) described in 2 above, the substituent represented by R 5 , or 3 above In the general formula (3), at least one of the substituents represented by R 6 contains a dibenzofuran ring derivative as a partial structure.
8.前記1に記載の一般式(1)において、Qで形成される芳香族炭化水素環がベンゼン環であることを特徴とする前記1に記載の有機エレクトロルミネッセンス材料。 8). 2. The organic electroluminescent material according to 1 above, wherein in the general formula (1) described in 1 above, the aromatic hydrocarbon ring formed by Q is a benzene ring.
9.前記1に記載の一般式(1)において、R3及びR4で表される置換基が水素原子であることを特徴とする有機エレクトロルミネッセンス材料。 9. 2. The organic electroluminescent material according to the above general formula (1), wherein the substituent represented by R 3 and R 4 is a hydrogen atom.
10.前記1に記載の一般式(1)においてR1で表される置換基が、少なくとも2つの縮合環を含有することを特徴とする有機エレクトロルミネッセンス材料。 10. 2. The organic electroluminescent material, wherein the substituent represented by R 1 in the general formula (1) described in 1 contains at least two condensed rings.
11.前記3に記載の一般式(3)において、R6で表される置換基がベンゾフラン環誘導体を部分構造として含有することを特徴とする有機エレクトロルミネッセンス材料。 11. 4. The organic electroluminescent material according to the general formula (3), wherein the substituent represented by R 6 contains a benzofuran ring derivative as a partial structure.
12.前記3に記載の一般式(3)において、R6で表される置換基がジベンゾフラン環誘導体を部分構造として含有することを特徴とする有機エレクトロルミネッセンス材料。 12 4. The organic electroluminescent material according to the above general formula (3), wherein the substituent represented by R 6 contains a dibenzofuran ring derivative as a partial structure.
13.前記3に記載の一般式(3)において、R6で表される置換基がジベンゾフラン環誘導体を少なくとも3個含有することを特徴とする有機エレクトロルミネッセンス材料。 13. 4. The organic electroluminescent material according to the general formula (3), wherein the substituent represented by R 6 contains at least three dibenzofuran ring derivatives.
14.前記3に記載の一般式(3)において、R6で表される置換基の式量が500〜2000であることを特徴とする有機エレクトロルミネッセンス材料。 14 4. The organic electroluminescent material according to the above general formula (3), wherein the substituent represented by R 6 has a formula weight of 500 to 2,000.
15.R1が連結基と少なくとも一つの酸素原子を含む縮合環で構成され、該連結基がQで形成される芳香族炭化水素環と結合していることを特徴とする前記1〜14のいずれか1項に記載の有機エレクトロルミネッセンス材料。
15. Any one of 1 to 14 above, wherein R 1 is composed of a linking group and a condensed ring containing at least one oxygen atom, and the linking group is bonded to an aromatic hydrocarbon ring formed by Q. 2. The organic electroluminescent material according to
16.R1が少なくとも一つの酸素原子を含む縮合環を表し、該縮合環上の炭素原子がQで形成される芳香族炭化水素環と結合していることを特徴とする前記1〜14のいずれか1項に記載の有機エレクトロルミネッセンス材料。
16. Any one of 1 to 14 above, wherein R 1 represents a condensed ring containing at least one oxygen atom, and a carbon atom on the condensed ring is bonded to an aromatic hydrocarbon ring formed by Q; 2. The organic electroluminescent material according to
17.前記1〜16のいずれか1項に記載の有機エレクトロルミネッセンス材料を含有することを特徴とする有機エレクトロルミネッセンス素子。 17. The organic electroluminescent element characterized by containing the organic electroluminescent material of any one of said 1-16.
18.前記1〜16のいずれか1項に記載の有機エレクトロルミネッセンス材料を発光層に含有することを特徴とする有機エレクトロルミネッセンス素子。 18. The organic electroluminescent material of any one of said 1-16 is contained in a light emitting layer, The organic electroluminescent element characterized by the above-mentioned.
19.前記1〜16のいずれか1項に記載の有機エレクトロルミネッセンス材料を含む有機層がウェットプロセスによって形成されたことを特徴とする有機エレクトロルミネッセンス素子。 19. 17. An organic electroluminescence device, wherein an organic layer containing the organic electroluminescence material according to any one of 1 to 16 is formed by a wet process.
20.前記17〜19のいずれか1項に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする表示装置。 20. 20. A display device comprising the organic electroluminescence element according to any one of 17 to 19 above.
21.前記17〜19のいずれか1項に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする照明装置。 21. 20. An illumination device comprising the organic electroluminescence element according to any one of 17 to 19 above.
本発明により、新規化合物、該新規化合物を含み、外部取り出し量子効率が高く、且つ、長寿命である有機EL素子、照明装置および表示装置を提供することができた。 According to the present invention, it was possible to provide a novel compound, an organic EL element, an illumination device, and a display device that include the novel compound, have a high external extraction quantum efficiency, and have a long lifetime.
本発明の化合物においては、請求項1〜16のいずれか1項に記載の構成を有することにより、有機エレクトロルミネッセンス素子の形成に有効な化合物(金属錯体ともいう)を得ることに成功し、該化合物を用いて、外部取り出し量子効率が高く、且つ、素子寿命の長い(堅牢性向上)有機エレクトロルミネッセンス素子(有機EL素子)を得ることが出来た。また、前記有機EL素子を具備した、表示装置、照明装置を得ることにも併せて成功した。 In the compound of this invention, it has succeeded in obtaining the compound (it is also called a metal complex) effective in formation of an organic electroluminescent element by having the structure of any one of Claims 1-16, Using the compound, an organic electroluminescence device (organic EL device) having high external extraction quantum efficiency and a long device life (improving robustness) could be obtained. Moreover, it succeeded also in obtaining the display apparatus and the illuminating device which comprised the said organic EL element.
以下、本発明に係る各構成要素の詳細について、順次説明する。 Hereinafter, details of each component according to the present invention will be sequentially described.
《一般式(1)で表される部分構造を含む化合物》
本発明の一般式(1)で表される部分構造を含む化合物について説明する。
<< Compound Containing Partial Structure Represented by General Formula (1) >>
The compound containing the partial structure represented by the general formula (1) of the present invention will be described.
一般式(1)において、R1〜R4は水素原子または置換基を表し、R1またはR2の少なくとも一つは酸素原子または硫黄原子を少なくとも一つ含有する縮合環を部分構造として持つ式量100以上の置換基を表し、n1は0〜4の整数を表し、Qは芳香族炭化水素環を形成するのに必要な原子群を表し、Mは遷移金属を表す。 In the general formula (1), R 1 to R 4 represent a hydrogen atom or a substituent, and at least one of R 1 or R 2 has a condensed ring containing at least one oxygen atom or sulfur atom as a partial structure. The substituent represents an amount of 100 or more, n1 represents an integer of 0 to 4, Q represents an atomic group necessary for forming an aromatic hydrocarbon ring, and M represents a transition metal.
一般式(1)において、R1〜R4で表される置換基としては、アルキル基(例えば、メチル基、エチル基、プロピル基、イソプロピル基、tert−ブチル基、ペンチル基、ヘキシル基、オクチル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基等)、シクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基等)、アルケニル基(例えば、ビニル基、アリル基、1−プロペニル基、2−ブテニル基、1,3−ブタジエニル基、2−ペンテニル基、イソプロペニル基等)、アルキニル基(例えば、エチニル基、プロパルギル基等)、芳香族炭化水素基(芳香族炭素環基、アリール基等ともいい、例えば、フェニル基、p−クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基等)、芳香族複素環基(例えば、フリル基、チエニル基、ピリジル基、ピリダジニル基、ピリミジニル基、ピラジニル基、トリアジニル基、イミダゾリル基、ピラゾリル基、チアゾリル基、キナゾリニル基、カルバゾリル基、カルボリニル基、ジアザカルバゾリル基(前記カルボリニル基のカルボリン環を構成する任意の炭素原子の一つが窒素原子で置き換わったものを示す)、フタラジニル基等)、複素環基(例えば、ピロリジル基、イミダゾリジル基、モルホリル基、オキサゾリジル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)、シクロアルコキシ基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基等)、アリールオキシ基(例えば、フェノキシ基、ナフチルオキシ基等)、アルキルチオ基(例えば、メチルチオ基、エチルチオ基、プロピルチオ基、ペンチルチオ基、ヘキシルチオ基、オクチルチオ基、ドデシルチオ基等)、シクロアルキルチオ基(例えば、シクロペンチルチオ基、シクロヘキシルチオ基等)、アリールチオ基(例えば、フェニルチオ基、ナフチルチオ基等)、アルコキシカルボニル基(例えば、メチルオキシカルボニル基、エチルオキシカルボニル基、ブチルオキシカルボニル基、オクチルオキシカルボニル基、ドデシルオキシカルボニル基等)、アリールオキシカルボニル基(例えば、フェニルオキシカルボニル基、ナフチルオキシカルボニル基等)、スルファモイル基(例えば、アミノスルホニル基、メチルアミノスルホニル基、ジメチルアミノスルホニル基、ブチルアミノスルホニル基、ヘキシルアミノスルホニル基、シクロヘキシルアミノスルホニル基、オクチルアミノスルホニル基、ドデシルアミノスルホニル基、フェニルアミノスルホニル基、ナフチルアミノスルホニル基、2−ピリジルアミノスルホニル基等)、アシル基(例えば、アセチル基、エチルカルボニル基、プロピルカルボニル基、ペンチルカルボニル基、シクロヘキシルカルボニル基、オクチルカルボニル基、2−エチルヘキシルカルボニル基、ドデシルカルボニル基、フェニルカルボニル基、ナフチルカルボニル基、ピリジルカルボニル基等)、アシルオキシ基(例えば、アセチルオキシ基、エチルカルボニルオキシ基、ブチルカルボニルオキシ基、オクチルカルボニルオキシ基、ドデシルカルボニルオキシ基、フェニルカルボニルオキシ基等)、アミド基(例えば、メチルカルボニルアミノ基、エチルカルボニルアミノ基、ジメチルカルボニルアミノ基、プロピルカルボニルアミノ基、ペンチルカルボニルアミノ基、シクロヘキシルカルボニルアミノ基、2−エチルヘキシルカルボニルアミノ基、オクチルカルボニルアミノ基、ドデシルカルボニルアミノ基、フェニルカルボニルアミノ基、ナフチルカルボニルアミノ基等)、カルバモイル基(例えば、アミノカルボニル基、メチルアミノカルボニル基、ジメチルアミノカルボニル基、プロピルアミノカルボニル基、ペンチルアミノカルボニル基、シクロヘキシルアミノカルボニル基、オクチルアミノカルボニル基、2−エチルヘキシルアミノカルボニル基、ドデシルアミノカルボニル基、フェニルアミノカルボニル基、ナフチルアミノカルボニル基、2−ピリジルアミノカルボニル基等)、ウレイド基(例えば、メチルウレイド基、エチルウレイド基、ペンチルウレイド基、シクロヘキシルウレイド基、オクチルウレイド基、ドデシルウレイド基、フェニルウレイド基ナフチルウレイド基、2−ピリジルアミノウレイド基等)、スルフィニル基(例えば、メチルスルフィニル基、エチルスルフィニル基、ブチルスルフィニル基、シクロヘキシルスルフィニル基、2−エチルヘキシルスルフィニル基、ドデシルスルフィニル基、フェニルスルフィニル基、ナフチルスルフィニル基、2−ピリジルスルフィニル基等)、アルキルスルホニル基(例えば、メチルスルホニル基、エチルスルホニル基、ブチルスルホニル基、シクロヘキシルスルホニル基、2−エチルヘキシルスルホニル基、ドデシルスルホニル基等)、アリールスルホニル基またはヘテロアリールスルホニル基(例えば、フェニルスルホニル基、ナフチルスルホニル基、2−ピリジルスルホニル基等)、アミノ基(例えば、アミノ基、エチルアミノ基、ジメチルアミノ基、ブチルアミノ基、シクロペンチルアミノ基、2−エチルヘキシルアミノ基、ドデシルアミノ基、アニリノ基、ナフチルアミノ基、2−ピリジルアミノ基等)、ハロゲン原子(例えば、フッ素原子、塩素原子、臭素原子等)、フッ化炭化水素基(例えば、フルオロメチル基、トリフルオロメチル基、ペンタフルオロエチル基、ペンタフルオロフェニル基等)、シアノ基、ニトロ基、ヒドロキシ基、メルカプト基、シリル基(例えば、トリメチルシリル基、トリイソプロピルシリル基、トリフェニルシリル基、フェニルジエチルシリル基等)、ホスホノ基等が挙げられる。 In the general formula (1), examples of the substituent represented by R 1 to R 4 include an alkyl group (for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group). Group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, etc.), cycloalkyl group (for example, cyclopentyl group, cyclohexyl group, etc.), alkenyl group (for example, vinyl group, allyl group, 1-propenyl group, 2-butenyl group) 1,3-butadienyl group, 2-pentenyl group, isopropenyl group, etc.), alkynyl group (for example, ethynyl group, propargyl group, etc.), aromatic hydrocarbon group (aromatic carbocyclic group, aryl group, etc.), For example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azide Nyl group, acenaphthenyl group, fluorenyl group, phenanthryl group, indenyl group, pyrenyl group, biphenylyl group, etc.), aromatic heterocyclic group (for example, furyl group, thienyl group, pyridyl group, pyridazinyl group, pyrimidinyl group, pyrazinyl group, triazinyl group) A group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, a quinazolinyl group, a carbazolyl group, a carbolinyl group, a diazacarbazolyl group (in which one of the carbon atoms constituting the carboline ring of the carbolinyl group is replaced by a nitrogen atom) ), Phthalazinyl group, etc.), heterocyclic group (eg, pyrrolidyl group, imidazolidyl group, morpholyl group, oxazolidyl group, etc.), alkoxy group (eg, methoxy group, ethoxy group, propyloxy group, pentyloxy group, hexyloxy group) , Octyloxy group, de Decyloxy group, etc.), cycloalkoxy group (eg, cyclopentyloxy group, cyclohexyloxy group, etc.), aryloxy group (eg, phenoxy group, naphthyloxy group, etc.), alkylthio group (eg, methylthio group, ethylthio group, propylthio group, Pentylthio group, hexylthio group, octylthio group, dodecylthio group, etc.), cycloalkylthio group (eg, cyclopentylthio group, cyclohexylthio group, etc.), arylthio group (eg, phenylthio group, naphthylthio group, etc.), alkoxycarbonyl group (eg, methyl Oxycarbonyl group, ethyloxycarbonyl group, butyloxycarbonyl group, octyloxycarbonyl group, dodecyloxycarbonyl group, etc.), aryloxycarbonyl group (for example, phenyloxycarbonyl) , Naphthyloxycarbonyl group, etc.), sulfamoyl group (for example, aminosulfonyl group, methylaminosulfonyl group, dimethylaminosulfonyl group, butylaminosulfonyl group, hexylaminosulfonyl group, cyclohexylaminosulfonyl group, octylaminosulfonyl group, dodecylaminosulfonyl group) Group, phenylaminosulfonyl group, naphthylaminosulfonyl group, 2-pyridylaminosulfonyl group, etc.), acyl group (for example, acetyl group, ethylcarbonyl group, propylcarbonyl group, pentylcarbonyl group, cyclohexylcarbonyl group, octylcarbonyl group, 2- Ethylhexylcarbonyl group, dodecylcarbonyl group, phenylcarbonyl group, naphthylcarbonyl group, pyridylcarbonyl group, etc.), acyloxy group (for example, Tiloxy group, ethylcarbonyloxy group, butylcarbonyloxy group, octylcarbonyloxy group, dodecylcarbonyloxy group, phenylcarbonyloxy group, etc.), amide group (for example, methylcarbonylamino group, ethylcarbonylamino group, dimethylcarbonylamino group, Propylcarbonylamino group, pentylcarbonylamino group, cyclohexylcarbonylamino group, 2-ethylhexylcarbonylamino group, octylcarbonylamino group, dodecylcarbonylamino group, phenylcarbonylamino group, naphthylcarbonylamino group, etc.), carbamoyl group (for example, amino Carbonyl group, methylaminocarbonyl group, dimethylaminocarbonyl group, propylaminocarbonyl group, pentylaminocarbonyl group, cyclohexyla Minocarbonyl group, octylaminocarbonyl group, 2-ethylhexylaminocarbonyl group, dodecylaminocarbonyl group, phenylaminocarbonyl group, naphthylaminocarbonyl group, 2-pyridylaminocarbonyl group, etc.), ureido group (for example, methylureido group, ethylureido) Group, pentylureido group, cyclohexylureido group, octylureido group, dodecylureido group, phenylureido group, naphthylureido group, 2-pyridylaminoureido group, etc.), sulfinyl group (for example, methylsulfinyl group, ethylsulfinyl group, butylsulfinyl group, Cyclohexylsulfinyl group, 2-ethylhexylsulfinyl group, dodecylsulfinyl group, phenylsulfinyl group, naphthylsulfinyl group, 2-pyridylsulfinyl group Group), alkylsulfonyl group (for example, methylsulfonyl group, ethylsulfonyl group, butylsulfonyl group, cyclohexylsulfonyl group, 2-ethylhexylsulfonyl group, dodecylsulfonyl group, etc.), arylsulfonyl group or heteroarylsulfonyl group (for example, phenyl) Sulfonyl group, naphthylsulfonyl group, 2-pyridylsulfonyl group, etc.), amino group (for example, amino group, ethylamino group, dimethylamino group, butylamino group, cyclopentylamino group, 2-ethylhexylamino group, dodecylamino group, anilino) Group, naphthylamino group, 2-pyridylamino group, etc.), halogen atom (eg, fluorine atom, chlorine atom, bromine atom, etc.), fluorinated hydrocarbon group (eg, fluoromethyl group, trifluoromethyl group, pentafluoroethylene). Group, pentafluorophenyl group, etc.), cyano group, nitro group, hydroxy group, mercapto group, silyl group (for example, trimethylsilyl group, triisopropylsilyl group, triphenylsilyl group, phenyldiethylsilyl group, etc.), phosphono group, etc. Is mentioned.
これらの置換基は、上記の置換基によってさらに置換されていてもよい。また、これらの置換基は複数が互いに結合して環を形成していてもよい。 These substituents may be further substituted with the above substituents. In addition, a plurality of these substituents may be bonded to each other to form a ring.
一般式(1)において、R1〜R4で表される置換基のうち、R1またはR2の少なくとも一つは、酸素原子または硫黄原子を少なくとも一つ含有する縮合環を部分構造として持つ式量100以上の置換基を表すが、酸素原子または硫黄原子を少なくとも一つ含有する縮合環としては、ベンゾチオフェン環、ジベンゾチオフェン環、ナフトチオフェン環、ベンゾフラン環、ジベンゾフラン環、ナフトフラン環、等が挙げられるが、好ましいものとしてはベンゾフラン環、ジベンゾフラン環が挙げられる。 In the general formula (1), at least one of R 1 and R 2 among the substituents represented by R 1 to R 4 has a condensed ring containing at least one oxygen atom or sulfur atom as a partial structure. Represents a substituent having a formula weight of 100 or more, and examples of the condensed ring containing at least one oxygen atom or sulfur atom include a benzothiophene ring, a dibenzothiophene ring, a naphthothiophene ring, a benzofuran ring, a dibenzofuran ring, and a naphthofuran ring. Preferred examples include a benzofuran ring and a dibenzofuran ring.
また、Qは芳香族炭化水素環を形成するのに必要な原子群を表し、芳香族炭化水素環基(芳香族炭素環基、アリール基等ともいい、例えば、フェニル基、p−クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基、メタターフェニリル基等)が挙げられるが、好ましくは、各々置換基を有する、フェニル基(ベンゼン環)、ビフェニリル基(ビフェニール環)、メタターフェニリル基(ターフェニール環)等が挙げられる。 Q represents an atomic group necessary for forming an aromatic hydrocarbon ring, and is also referred to as an aromatic hydrocarbon ring group (also referred to as an aromatic carbocyclic group, an aryl group, etc., for example, a phenyl group, a p-chlorophenyl group, Mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl group, acenaphthenyl group, fluorenyl group, phenanthryl group, indenyl group, pyrenyl group, biphenylyl group, metaterphenylyl group, etc., preferably A phenyl group (benzene ring), a biphenylyl group (biphenyl ring), a metaterphenylyl group (terphenyl ring), and the like, each having a substituent.
また、上記の置換基としては、アルキル基(例えば、メチル基、エチル基、プロピル基、イソプロピル基、tert−ブチル基、ペンチル基、ヘキシル基、オクチル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、イソプロピルオキシ基、tert−ブチルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)が好ましく、更に好ましくは、分岐アルキル基(例えば、イソプロピル基、tert−ブチル基等)または分岐アルコキシ基(例えば、イソプロピルオキシ基、tert−ブチルオキシ基等)が好ましい。 In addition, examples of the substituent include alkyl groups (for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group). Group) and alkoxy groups (for example, methoxy group, ethoxy group, propyloxy group, isopropyloxy group, tert-butyloxy group, pentyloxy group, hexyloxy group, octyloxy group, dodecyloxy group, etc.) are preferable. Is preferably a branched alkyl group (for example, isopropyl group, tert-butyl group and the like) or a branched alkoxy group (for example, isopropyloxy group, tert-butyloxy group and the like).
Mで表される遷移金属としてはルテニウム、ロジウム、パラジウム、銀、オスミウム、イリジウム、白金、金等が挙げられる。より好ましくはイリジウム及び白金である。 Examples of the transition metal represented by M include ruthenium, rhodium, palladium, silver, osmium, iridium, platinum, and gold. More preferred are iridium and platinum.
また、前記一般式(1)において、R2で表される置換基は、下記一般式(2)または一般式(3)で表されることが好ましい。 In the general formula (1), the substituent represented by R 2 is preferably represented by the following general formula (2) or general formula (3).
式中、R5で表される置換基は水素原子または置換基を表し、n2は0〜5の整数を表す。ここにおいてR5で表される置換基としては前記一般式(1)において、R1〜R4で挙げられた置換基と同義である。 In the formula, the substituent represented by R 5 represents a hydrogen atom or a substituent, and n2 represents an integer of 0 to 5. Here, the substituent represented by R 5 has the same meaning as the substituents exemplified in R 1 to R 4 in the general formula (1).
式中、R6で表される置換基は同様に水素原子または置換基を表し、n3は0〜3の整数を表す。ここにおいてR6で表される置換基としては前記一般式(1)において、R1〜R4で挙げられた置換基と同義である。 In the formula, the substituent represented by R 6 similarly represents a hydrogen atom or a substituent, and n3 represents an integer of 0 to 3. Here, the substituent represented by R 6 has the same meaning as the substituents exemplified in R 1 to R 4 in the general formula (1).
また、前記一般式(1)において、R1〜R4で表される置換基の式量の総和は1000〜10000であることが好ましく、更には、R1〜R4で表される置換基の式量の総和は1500〜5000であることが好ましい。 Moreover, in the said General formula (1), it is preferable that the sum total of the formula weight of the substituent represented by R < 1 > -R < 4 > is 1000-10000, Furthermore, the substituent represented by R < 1 > -R < 4 >. The total sum of the formula weights is preferably 1500 to 5000.
前記一般式(1)におけるR1〜R4で表される置換基、また、前記一般式(2)におけるR5で表される置換基、または、前記一般式(3)におけるR6で表される置換基、の少なくとも一つは、ベンゾフラン環誘導体を部分構造として含有することが好ましい。 The substituent represented by R 1 to R 4 in the general formula (1), the substituent represented by R 5 in the general formula (2), or R 6 in the general formula (3). At least one of the substituted groups preferably contains a benzofuran ring derivative as a partial structure.
ここにおいてベンゾフラン環誘導体とは、ベンゾフラン骨格を有する置換されたベンゾフラン環をもつもの、またベンゾフラン環を縮合環の一部として有するものを含む。 Here, the benzofuran ring derivative includes those having a substituted benzofuran ring having a benzofuran skeleton and those having a benzofuran ring as a part of the condensed ring.
また、前記一般式(1)におけるR1〜R4で表される置換基、また、前記一般式(2)におけるR5で表される置換基、または前記3に記載の一般式(3)におけるR6で表される置換基、の少なくとも一つは、ベンゾフラン環誘導体を部分構造として含有することが好ましい。ここにおいてジベンゾフラン環誘導体とは、ジベンゾフラン骨格を有する置換されたジベンゾフラン環をもつもの、またジベンゾフラン環を縮合環の一部として有するものを含む。 Further, the substituent represented by R 1 to R 4 in the general formula (1), also the substituents represented by R 5 in the general formula (2) or general formula according to the 3, (3) At least one of the substituents represented by R 6 in the formula preferably contains a benzofuran ring derivative as a partial structure. Here, the dibenzofuran ring derivative includes those having a substituted dibenzofuran ring having a dibenzofuran skeleton and those having a dibenzofuran ring as a part of the condensed ring.
また、前記一般式(1)において、Qで形成される芳香族炭化水素環はベンゼン環であることが好ましい。 In the general formula (1), the aromatic hydrocarbon ring formed by Q is preferably a benzene ring.
また、前記一般式(1)において、R3及びR4で表される置換基は水素原子であることが好ましい。 In the general formula (1), the substituent represented by R 3 and R 4 is preferably a hydrogen atom.
前記一般式(1)における、R1で表される置換基は、縮合環を少なくとも2つ含有することが好ましい。ここにおける縮合環とは、前記の酸素、または硫黄原子を少なくとも一つ含有する縮合環に加えて、ナフタレン環、アントラセン環、インドール環、カルバゾール環、カルボリン環、ジアザカルバゾール環等の炭素環からなる縮合環、また酸素または硫黄原子以外のヘテロ原子、例えば窒素を含む縮合環を意味する。中でも、R1で表される置換基が、ジベンゾフラン環等の酸素または硫黄原子を含む縮合環に加え、窒素原子を少なくとも一つ含有する縮合環、例えば、カルバゾール環等を含むものは好ましい。 In the general formula (1), the substituent represented by R 1 preferably contains at least two condensed rings. The condensed ring here is in addition to the condensed ring containing at least one oxygen or sulfur atom, as well as carbocyclic rings such as naphthalene ring, anthracene ring, indole ring, carbazole ring, carboline ring, diazacarbazole ring and the like. Or a condensed ring containing a hetero atom other than oxygen or sulfur atom, for example, nitrogen. Among them, the substituent represented by R 1 is preferably a condensed ring containing at least one nitrogen atom in addition to a condensed ring containing an oxygen or sulfur atom such as a dibenzofuran ring, such as a carbazole ring.
また、前記一般式(1)におけるR2で表される好ましい置換基である前記一般式(3)において、R6で表される置換基は、ベンゾフラン環誘導体を部分構造として含有することが好ましく、また、ジベンゾフラン環誘導体を部分構造として含有することが好ましく、更には、R6で表される置換基は、ジベンゾフラン環誘導体を少なくとも3個含有することが好ましい。 In the general formula (3), which is a preferred substituent represented by R 2 in the general formula (1), the substituent represented by R 6 preferably contains a benzofuran ring derivative as a partial structure. The dibenzofuran ring derivative is preferably contained as a partial structure, and the substituent represented by R 6 preferably contains at least three dibenzofuran ring derivatives.
また、前記一般式(3)において、R6で表される置換基の式量は、500〜2000であることが好ましい。 Moreover, in the said General formula (3), it is preferable that the formula weight of the substituent represented by R < 6 > is 500-2000.
また、1つの形態において、前記一般式(1)におけるR1で表される置換基が、連結基と少なくとも一つの酸素原子を含む縮合環で構成され、該連結基がQで形成される芳香族炭化水素環と結合していることも好ましい。 In one embodiment, the substituent represented by R 1 in the general formula (1) is composed of a condensed ring containing a linking group and at least one oxygen atom, and the linking group is formed by Q. It is also preferred that it is bonded to an aromatic hydrocarbon ring.
ここで連結基は、2価の連結基であれば問わないが、アルキレン基、アリーレン基、ヘテロアリーレン基が好ましく、例えば、炭素数8までのアルキレン基、例えば、フェニレン基、p−クロロフェニル基、キシリレン基、ナフチレン基等、ビフェニレン基、また、例えば、チエニレン基、ピリジル基、ピリダジニル基、ピリミジニル基、ピラジニル基、トリアジニレン基が挙げられるが、好ましくは、各々置換基を有する、フェニレン基、ビフェニレン基等が挙げられる。 Here, the linking group is not particularly limited as long as it is a divalent linking group, but is preferably an alkylene group, an arylene group, or a heteroarylene group, for example, an alkylene group having up to 8 carbon atoms, such as a phenylene group, a p-chlorophenyl group, Xylylene group, naphthylene group, etc., biphenylene group, and also include, for example, thienylene group, pyridyl group, pyridazinyl group, pyrimidinyl group, pyrazinyl group, triazinylene group, preferably phenylene group, biphenylene group each having a substituent Etc.
また、前記一般式(1)におけるR1で表される置換基が少なくとも一つの酸素原子を含む縮合環を表すとき、該該縮合環上の炭素原子が、Qで形成される芳香族炭化水素環と結合していることも好ましい態様である。 In addition, when the substituent represented by R 1 in the general formula (1) represents a condensed ring containing at least one oxygen atom, the aromatic hydrocarbon formed by Q as the carbon atom on the condensed ring It is also a preferred embodiment that it is bonded to a ring.
以下、本発明に係る、一般式(1)で表される部分構造を含む化合物の具体例を示すが、本発明はこれらに限定されない。 Hereinafter, although the specific example of the compound containing the partial structure represented by General formula (1) based on this invention is shown, this invention is not limited to these.
これらの化合物は、公知の方法により合成可能であり、例えば、国際公開第04/085450号、特開2005−53912号公報、また、国際公開第2006/121811号、国際公開第2006/046980号等に記載の方法に準じる方法により製造することができる。 These compounds can be synthesized by known methods. For example, International Publication No. 04/085450, Japanese Patent Application Laid-Open No. 2005-53912, International Publication No. 2006/121811, International Publication No. 2006/046980, and the like. It can manufacture by the method according to the method of description.
《有機EL素子の構成層》
本発明の有機EL素子の構成層について説明する。本発明において、有機EL素子の層構成の好ましい具体例を以下に示すが、本発明はこれらに限定されない。
(i)陽極/発光層/電子輸送層/陰極
(ii)陽極/正孔輸送層/発光層/電子輸送層/陰極
(iii)陽極/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極
(iv)陽極/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層/陰極
(v)陽極/陽極バッファー層/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層/陰極
本発明の有機EL素子においては、青色発光層の発光極大波長は430nm〜480nmにあるものが好ましく、緑色発光層は発光極大波長が510nm〜550nm、赤色発光層は発光極大波長が600nm〜640nmの範囲にある単色発光層であることが好ましく、これらを用いた表示装置であることが好ましい。また、これらの少なくとも3層の発光層を積層して白色発光層としたものであってもよい。更に、発光層間には非発光性の中間層を有していてもよい。本発明の有機EL素子としては白色発光層であることが好ましく、これらを用いた照明装置であることが好ましい。
<< Constituent layers of organic EL elements >>
The constituent layers of the organic EL element of the present invention will be described. In this invention, although the preferable specific example of the layer structure of an organic EL element is shown below, this invention is not limited to these.
(I) Anode / light emitting layer / electron transport layer / cathode (ii) Anode / hole transport layer / light emitting layer / electron transport layer / cathode (iii) Anode / hole transport layer / light emitting layer / hole blocking layer / electron Transport layer / cathode (iv) anode / hole transport layer / light emitting layer / hole blocking layer / electron transport layer / cathode buffer layer / cathode (v) anode / anode buffer layer / hole transport layer / light emitting layer / hole Blocking layer / electron transport layer / cathode buffer layer / cathode In the organic EL device of the present invention, the blue light emitting layer preferably has a light emission maximum wavelength of 430 nm to 480 nm, and the green light emitting layer has a light emission maximum wavelength of 510 nm to 550 nm, The red light emitting layer is preferably a monochromatic light emitting layer having a light emission maximum wavelength in the range of 600 nm to 640 nm, and is preferably a display device using these. Alternatively, a white light emitting layer may be formed by laminating at least three light emitting layers. Further, a non-light emitting intermediate layer may be provided between the light emitting layers. The organic EL element of the present invention is preferably a white light emitting layer, and is preferably a lighting device using these.
本発明の有機EL素子を構成する各層について説明する。 Each layer which comprises the organic EL element of this invention is demonstrated.
《発光層》
本発明に係る発光層は、電極または電子輸送層、正孔輸送層から注入されてくる電子及び正孔が再結合して発光する層であり、発光する部分は発光層の層内であっても発光層と隣接層との界面であってもよい。
<Light emitting layer>
The light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode, the electron transport layer, or the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. May be the interface between the light emitting layer and the adjacent layer.
発光層の膜厚の総和は特に制限はないが、膜の均質性や、発光時に不必要な高電圧を印加するのを防止し、かつ、駆動電流に対する発光色の安定性向上の観点から、2nm〜5μmの範囲に調整することが好ましく、さらに好ましくは2nm〜200nmの範囲に調整され、特に好ましくは、10nm〜20nmの範囲である。 The total film thickness of the light emitting layer is not particularly limited, but from the viewpoint of improving the uniformity of the film, preventing unnecessary application of high voltage during light emission, and improving the stability of the emission color with respect to the drive current. It is preferable to adjust in the range of 2 nm to 5 μm, more preferably in the range of 2 nm to 200 nm, and particularly preferably in the range of 10 nm to 20 nm.
発光層の作製には、後述する発光ドーパントやホスト化合物を、例えば、真空蒸着法、スピンコート法、キャスト法、LB法、インクジェット法等の公知の薄膜化法により製膜して形成することができる。 For the production of the light-emitting layer, a light-emitting dopant or a host compound, which will be described later, is formed and formed by a known thinning method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, or an ink-jet method. it can.
本発明の有機EL素子の発光層には、発光ホスト化合物と、発光ドーパント(リン光ドーパント(リン光発光性ドーパントともいう)や蛍光ドーパント等)の少なくとも1種類とを含有することが好ましい。 The light emitting layer of the organic EL device of the present invention preferably contains a light emitting host compound and at least one kind of light emitting dopant (such as a phosphorescent dopant (also referred to as a phosphorescent dopant) or a fluorescent dopant).
(ホスト化合物(発光ホスト等ともいう))
本発明に用いられる発光ホスト化合物としては、構造的には特に制限はないが、代表的にはカルバゾール誘導体、トリアリールアミン誘導体、芳香族ボラン誘導体、含窒素複素環化合物、チオフェン誘導体、フラン誘導体、オリゴアリーレン化合物等の基本骨格を有するもの、または、カルボリン誘導体やジアザカルバゾール誘導体(ここで、ジアザカルバゾール誘導体とは、カルボリン誘導体のカルボリン環を構成する炭化水素環の少なくとも1つの炭素原子が窒素原子で置換されているものを表す。)等が挙げられる。
(Host compound (also called luminescent host))
The light-emitting host compound used in the present invention is not particularly limited in terms of structure, but typically, a carbazole derivative, a triarylamine derivative, an aromatic borane derivative, a nitrogen-containing heterocyclic compound, a thiophene derivative, a furan derivative, Those having a basic skeleton such as an oligoarylene compound, or a carboline derivative or a diazacarbazole derivative (here, a diazacarbazole derivative is a compound in which at least one carbon atom of a hydrocarbon ring constituting a carboline ring of a carboline derivative is nitrogen Represents an atom substituted with an atom.) And the like.
本発明においてホスト化合物は、発光層に含有される化合物の内でその層中での質量比が20%以上であり、且つ室温(25℃)においてリン光発光のリン光量子収率が、0.1未満の化合物と定義される。好ましくはリン光量子収率が0.01未満である。また、発光層に含有される化合物の中で、その層中での質量比が20%以上であることが好ましい。 In the present invention, the host compound has a mass ratio of 20% or more among the compounds contained in the light emitting layer, and a phosphorescence quantum yield of phosphorescence emission at a room temperature (25 ° C.) of 0. Defined as less than 1 compound. The phosphorescence quantum yield is preferably less than 0.01. Moreover, it is preferable that the mass ratio in the layer is 20% or more among the compounds contained in a light emitting layer.
ホスト化合物としては、上記のホスト化合物を単独で用いてもよく、または複数種併用して用いてもよい。ホスト化合物を複数種用いることで、電荷の移動を調整することが可能であり、有機EL素子を高効率化することができる。また、前記の一般式(1)で表される部分構造を含む化合物、また後述する発光ドーパントを複数種用いることで、異なる発光を混ぜることが可能となり、これにより任意の発光色を得ることができる。 As the host compound, the above host compounds may be used alone or in combination of two or more. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient. Moreover, it becomes possible to mix different light emission by using multiple types of the compound containing the partial structure represented by the said General formula (1), and the light emission dopant mentioned later, and can obtain arbitrary luminescent colors by this. it can.
また、本発明に用いられる発光ホストとしては、従来公知の低分子化合物でも、繰り返し単位をもつ高分子化合物でもよく、ビニル基やエポキシ基のような重合性基を有する低分子化合物(蒸着重合性発光ホスト)でも良い。 The light emitting host used in the present invention may be a conventionally known low molecular compound or a high molecular compound having a repeating unit, and a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (deposition polymerization property). Light emitting host).
併用してもよい公知のホスト化合物としては、正孔輸送能、電子輸送能を有しつつ、且つ発光の長波長化を防ぎ、なお且つ高Tg(ガラス転移温度)である化合物が好ましい。 As a known host compound that may be used in combination, a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from being increased in wavelength, and has a high Tg (glass transition temperature) is preferable.
公知のホスト化合物の具体例としては、以下の文献に記載されている化合物が挙げられる。 Specific examples of known host compounds include compounds described in the following documents.
特開2001−257076号公報、同2002−308855号公報、同2001−313179号公報、同2002−319491号公報、同2001−357977号公報、同2002−334786号公報、同2002−8860号公報、同2002−334787号公報、同2002−15871号公報、同2002−334788号公報、同2002−43056号公報、同2002−334789号公報、同2002−75645号公報、同2002−338579号公報、同2002−105445号公報、同2002−343568号公報、同2002−141173号公報、同2002−352957号公報、同2002−203683号公報、同2002−363227号公報、同2002−231453号公報、同2003−3165号公報、同2002−234888号公報、同2003−27048号公報、同2002−255934号公報、同2002−260861号公報、同2002−280183号公報、同2002−299060号公報、同2002−302516号公報、同2002−305083号公報、同2002−305084号公報、同2002−308837号公報等。 JP-A-2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, 2002-334786, 2002-8860, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645, 2002-338579, 2002-105445 gazette, 2002-343568 gazette, 2002-141173 gazette, 2002-352957 gazette, 2002-203683 gazette, 2002-363227 gazette, 2002-231453 gazette, No. 003-3165, No. 2002-234888, No. 2003-27048, No. 2002-255934, No. 2002-286061, No. 2002-280183, No. 2002-299060, No. 2002. -302516, 2002-305083, 2002-305084, 2002-308837, and the like.
(発光ドーパント)
発光ドーパントについて説明する。
(Luminescent dopant)
The luminescent dopant will be described.
発光ドーパントとしては、蛍光ドーパント(蛍光性化合物ともいう)、リン光ドーパント(リン光発光体、リン光性化合物、リン光発光性化合物等ともいう)を用いることができるが、より発光効率の高い有機EL素子を得る観点からは、本発明の有機EL素子の発光層や発光ユニットに使用される発光ドーパント(単に、発光材料ということもある)としては、前記の一般式(1)で表される部分構造を含む化合物をリン光ドーパントとして含有する。 As the light-emitting dopant, a fluorescent dopant (also referred to as a fluorescent compound) or a phosphorescent dopant (also referred to as a phosphorescent emitter, a phosphorescent compound, a phosphorescent compound, or the like) can be used, but the emission efficiency is higher. From the viewpoint of obtaining an organic EL element, the light emitting dopant (sometimes referred to simply as a light emitting material) used in the light emitting layer or light emitting unit of the organic EL element of the present invention is represented by the general formula (1). A compound containing a partial structure is contained as a phosphorescent dopant.
(リン光ドーパント)
本発明に係るリン光ドーパントについて説明する。
(Phosphorescent dopant)
The phosphorescent dopant according to the present invention will be described.
本発明に係るリン光ドーパントは、励起三重項からの発光が観測される化合物であり、具体的には、室温(25℃)にてリン光発光する化合物であり、リン光量子収率が、25℃において0.01以上の化合物であると定義されるが、好ましいリン光量子収率は0.1以上である。 The phosphorescent dopant according to the present invention is a compound in which light emission from an excited triplet is observed. Specifically, the phosphorescent dopant is a compound that emits phosphorescence at room temperature (25 ° C.) and has a phosphorescence quantum yield of 25. Although it is defined as a compound of 0.01 or more at ° C., a preferable phosphorescence quantum yield is 0.1 or more.
上記リン光量子収率は、第4版実験化学講座7の分光IIの398頁(1992年版、丸善)に記載の方法により測定できる。溶液中でのリン光量子収率は種々の溶媒を用いて測定できるが、本発明に係るリン光ドーパントは、任意の溶媒のいずれかにおいて上記リン光量子収率(0.01以上)が達成されればよい。 The phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence dopant according to the present invention achieves the phosphorescence quantum yield (0.01 or more) in any solvent. That's fine.
リン光ドーパントの発光は原理としては2種挙げられ、一つはキャリアが輸送されるホスト化合物上でキャリアの再結合が起こってホスト化合物の励起状態が生成し、このエネルギーをリン光ドーパントに移動させることでリン光ドーパントからの発光を得るというエネルギー移動型、もう一つはリン光ドーパントがキャリアトラップとなり、リン光ドーパント上でキャリアの再結合が起こりリン光ドーパントからの発光が得られるというキャリアトラップ型であるが、いずれの場合においても、リン光ドーパントの励起状態のエネルギーはホスト化合物の励起状態のエネルギーよりも低いことが条件である。 There are two types of light emission of phosphorescent dopants in principle. One is the recombination of carriers on the host compound to which carriers are transported to generate an excited state of the host compound, and this energy is transferred to the phosphorescent dopant. The energy transfer type that obtains light emission from the phosphorescent dopant, and the other is that the phosphorescent dopant becomes a carrier trap, carrier recombination occurs on the phosphorescent dopant, and light emission from the phosphorescent dopant is obtained. Although it is a trap type, in any case, the excited state energy of the phosphorescent dopant is required to be lower than the excited state energy of the host compound.
本発明に係るリン光ドーパントとしては、好ましくは元素周期表で8族〜10族の金属を含有する錯体系化合物であり、さらに好ましくはイリジウム化合物、オスミウム化合物、または白金化合物(白金錯体系化合物)、希土類錯体であり、中でも最も好ましいのはイリジウム化合物である。 The phosphorescent dopant according to the present invention is preferably a complex compound containing a group 8-10 metal in the periodic table, more preferably an iridium compound, an osmium compound, or a platinum compound (platinum complex compound). Rare earth complexes, most preferably iridium compounds.
本発明においては、リン光ドーパントは、前記の一般式(1)で表される部分構造を含む化合物から選ばれるものの中から適宜選択して用いることができる。 In the present invention, the phosphorescent dopant can be appropriately selected from those selected from compounds containing the partial structure represented by the general formula (1).
また、本発明においては、前記の一般式(1)で表される部分構造を含む化合物から選ばれるもの以外にも、有機EL素子の発光層に使用される公知のリン光ドーパントを用いることができる。 Further, in the present invention, in addition to those selected from the compound containing the partial structure represented by the general formula (1), a known phosphorescent dopant used for the light emitting layer of the organic EL element may be used. it can.
以下に、リン光ドーパントとして用いられる公知の化合物の具体例を示すが、本発明はこれらに限定されない。これらの化合物は、例えば、Inorg.Chem.40巻、1704〜1711に記載の方法等により合成できる。 Although the specific example of the well-known compound used as a phosphorescence dopant below is shown, this invention is not limited to these. These compounds are described, for example, in Inorg. Chem. 40, 1704-1711, and the like.
(蛍光ドーパント(蛍光性化合物ともいう))
蛍光ドーパント(蛍光性化合物)としては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素、または希土類錯体系蛍光体等が挙げられる。
(Fluorescent dopant (also called fluorescent compound))
Fluorescent dopants (fluorescent compounds) include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes Examples thereof include dyes, stilbene dyes, polythiophene dyes, and rare earth complex phosphors.
次に、本発明の有機EL素子の構成層として用いられる、注入層、阻止層、電子輸送層等について説明する。 Next, an injection layer, a blocking layer, an electron transport layer and the like used as the constituent layers of the organic EL element of the present invention will be described.
《注入層:電子注入層、正孔注入層》
注入層は必要に応じて設け、電子注入層と正孔注入層があり、上記の如く陽極と発光層または正孔輸送層の間、及び陰極と発光層または電子輸送層との間に存在させてもよい。
<< Injection layer: electron injection layer, hole injection layer >>
The injection layer is provided as necessary, and there are an electron injection layer and a hole injection layer, and as described above, it exists between the anode and the light emitting layer or the hole transport layer and between the cathode and the light emitting layer or the electron transport layer. May be.
注入層とは、駆動電圧低下や発光輝度向上のために電極と有機層間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123〜166頁)に詳細に記載されており、正孔注入層(陽極バッファー層)と電子注入層(陰極バッファー層)とがある。 An injection layer is a layer provided between an electrode and an organic layer in order to reduce drive voltage and improve light emission luminance. “Organic EL element and its forefront of industrialization (issued by NTT Corporation on November 30, 1998) 2), Chapter 2, “Electrode Materials” (pages 123 to 166) in detail, and includes a hole injection layer (anode buffer layer) and an electron injection layer (cathode buffer layer).
陽極バッファー層(正孔注入層)は、特開平9−45479号公報、同9−260062号公報、同8−288069号公報等にもその詳細が記載されており、具体例として、銅フタロシアニンに代表されるフタロシアニンバッファー層、酸化バナジウムに代表される酸化物バッファー層、アモルファスカーボンバッファー層、ポリアニリン(エメラルディン)やポリチオフェン等の導電性高分子を用いた高分子バッファー層等が挙げられる。 The details of the anode buffer layer (hole injection layer) are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069 and the like. As a specific example, copper phthalocyanine is used. Examples thereof include a phthalocyanine buffer layer represented by an oxide, an oxide buffer layer represented by vanadium oxide, an amorphous carbon buffer layer, and a polymer buffer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.
陰極バッファー層(電子注入層)は、特開平6−325871号公報、同9−17574号公報、同10−74586号公報等にもその詳細が記載されており、具体的にはストロンチウムやアルミニウム等に代表される金属バッファー層、フッ化リチウムに代表されるアルカリ金属化合物バッファー層、フッ化マグネシウムに代表されるアルカリ土類金属化合物バッファー層、酸化アルミニウムに代表される酸化物バッファー層等が挙げられる。上記バッファー層(注入層)はごく薄い膜であることが望ましく、素材にもよるがその膜厚は0.1nm〜5μmの範囲が好ましい。 The details of the cathode buffer layer (electron injection layer) are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specifically, strontium, aluminum, etc. Metal buffer layer typified by lithium, alkali metal compound buffer layer typified by lithium fluoride, alkaline earth metal compound buffer layer typified by magnesium fluoride, oxide buffer layer typified by aluminum oxide, etc. . The buffer layer (injection layer) is preferably a very thin film, and the film thickness is preferably in the range of 0.1 nm to 5 μm although it depends on the material.
《阻止層:正孔阻止層、電子阻止層》
阻止層は、上記の如く有機化合物薄膜の基本構成層の他に必要に応じて設けられるものである。例えば、特開平11−204258号公報、同11−204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。
<Blocking layer: hole blocking layer, electron blocking layer>
The blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film as described above. For example, it is described in JP-A Nos. 11-204258, 11-204359, and “Organic EL elements and their forefront of industrialization” (issued by NTT, Inc. on November 30, 1998). There is a hole blocking (hole blocking) layer.
正孔阻止層とは広い意味では電子輸送層の機能を有し、電子を輸送する機能を有しつつ正孔を輸送する能力が著しく小さい正孔阻止材料からなり、電子を輸送しつつ正孔を阻止することで電子と正孔の再結合確率を向上させることができる。また、後述する電子輸送層の構成を必要に応じて、本発明に係わる正孔阻止層として用いることができる。 The hole blocking layer has a function of an electron transport layer in a broad sense, and is made of a hole blocking material that has a function of transporting electrons and has a remarkably small ability to transport holes. The probability of recombination of electrons and holes can be improved by blocking. Moreover, the structure of the electron carrying layer mentioned later can be used as a hole-blocking layer concerning this invention as needed.
本発明の有機EL素子の正孔阻止層は、発光層に隣接して設けられていることが好ましい。 The hole blocking layer of the organic EL device of the present invention is preferably provided adjacent to the light emitting layer.
正孔阻止層には、前述のホスト化合物として挙げたカルバゾール誘導体、またカルボリン誘導体やジアザカルバゾール誘導体を含有することが好ましい。 The hole blocking layer preferably contains the carbazole derivative, carboline derivative or diazacarbazole derivative mentioned as the host compound.
また、本発明においては、複数の発光色の異なる複数の発光層を有する場合、その発光極大波長が最も短波にある発光層が、全発光層中、最も陽極に近いことが好ましいが、このような場合、該最短波層と該層の次に陽極に近い発光層との間に正孔阻止層を追加して設けることが好ましい。更には、該位置に設けられる正孔阻止層に含有される化合物の50質量%以上が、前記最短波発光層のホスト化合物に対しそのイオン化ポテンシャルが0.3eV以上大きいことが好ましい。 In the present invention, when a plurality of light emitting layers having different light emission colors are provided, the light emitting layer having the shortest wavelength of light emission is preferably closest to the anode among all the light emitting layers. In this case, it is preferable to additionally provide a hole blocking layer between the shortest wave layer and the light emitting layer next to the anode next to the anode. Furthermore, it is preferable that 50% by mass or more of the compound contained in the hole blocking layer provided at the position has an ionization potential of 0.3 eV or more larger than the host compound of the shortest wave emitting layer.
イオン化ポテンシャルは化合物のHOMO(最高被占分子軌道)レベルにある電子を真空準位に放出するのに必要なエネルギーで定義され、例えば下記に示すような方法により求めることができる。 The ionization potential is defined by the energy required to emit an electron at the HOMO (highest occupied molecular orbital) level of the compound to the vacuum level, and can be obtained by the following method, for example.
(1)米国Gaussian社製の分子軌道計算用ソフトウェアであるGaussian98(Gaussian98、Revision A.11.4,M.J.Frisch,et al,Gaussian,Inc.,Pittsburgh PA,2002.)を用い、キーワードとしてB3LYP/6−31G*を用いて構造最適化を行うことにより算出した値(eV単位換算値)の小数点第2位を四捨五入した値としてイオン化ポテンシャルを求めることができる。この計算値が有効な背景には、この手法で求めた計算値と実験値の相関が高いためである。 (1) Using Gaussian 98 (Gaussian 98, Revision A.11.4, MJ Frisch, et al, Gaussian, Inc., Pittsburgh PA, 2002.), a molecular orbital calculation software manufactured by Gaussian, USA The ionization potential can be obtained as a value obtained by rounding off the second decimal place of the value (eV unit converted value) calculated by performing structural optimization using B3LYP / 6-31G *. This calculation value is effective because the correlation between the calculation value obtained by this method and the experimental value is high.
(2)イオン化ポテンシャルは光電子分光法で直接測定する方法により求めることもできる。例えば、理研計器社製の低エネルギー電子分光装置「Model AC−1」を用いて、あるいは紫外光電子分光として知られている方法を好適に用いることができる。 (2) The ionization potential can also be obtained by a method of directly measuring by photoelectron spectroscopy. For example, a method known as ultraviolet photoelectron spectroscopy can be suitably used by using a low energy electron spectrometer “Model AC-1” manufactured by Riken Keiki Co., Ltd.
一方、電子阻止層とは広い意味では正孔輸送層の機能を有し、正孔を輸送する機能を有しつつ電子を輸送する能力が著しく小さい材料からなり、正孔を輸送しつつ電子を阻止することで電子と正孔の再結合確率を向上させることができる。また、後述する正孔輸送層の構成を必要に応じて電子阻止層として用いることができる。本発明に係る正孔阻止層、電子輸送層の膜厚としては、好ましくは3nm〜100nmであり、更に好ましくは5nm〜30nmである。 On the other hand, the electron blocking layer has a function of a hole transport layer in a broad sense, and is made of a material that has a function of transporting holes and has an extremely small ability to transport electrons, and transports electrons while transporting holes. By blocking, the recombination probability of electrons and holes can be improved. Moreover, the structure of the positive hole transport layer mentioned later can be used as an electron blocking layer as needed. The film thickness of the hole blocking layer and the electron transport layer according to the present invention is preferably 3 nm to 100 nm, and more preferably 5 nm to 30 nm.
《正孔輸送層》
正孔輸送層とは正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層、電子阻止層も正孔輸送層に含まれる。正孔輸送層は単層または複数層設けることができる。
《Hole transport layer》
The hole transport layer is made of a hole transport material having a function of transporting holes, and in a broad sense, a hole injection layer and an electron blocking layer are also included in the hole transport layer. The hole transport layer can be provided as a single layer or a plurality of layers.
正孔輸送材料としては、正孔の注入または輸送、電子の障壁性のいずれかを有するものであり、有機物、無機物のいずれであってもよい。例えば、トリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体及びピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミノ置換カルコン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シラザン誘導体、アニリン系共重合体、また導電性高分子オリゴマー、特にチオフェンオリゴマー等が挙げられる。 The hole transport material has any one of hole injection or transport and electron barrier properties, and may be either organic or inorganic. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
正孔輸送材料としては上記のものを使用することができるが、ポルフィリン化合物、芳香族第3級アミン化合物及びスチリルアミン化合物、特に芳香族第3級アミン化合物を用いることが好ましい。 The above-mentioned materials can be used as the hole transport material, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
芳香族第3級アミン化合物及びスチリルアミン化合物の代表例としては、N,N,N′,N′−テトラフェニル−4,4′−ジアミノフェニル;N,N′−ジフェニル−N,N′−ビス(3−メチルフェニル)−〔1,1′−ビフェニル〕−4,4′−ジアミン(TPD);2,2−ビス(4−ジ−p−トリルアミノフェニル)プロパン;1,1−ビス(4−ジ−p−トリルアミノフェニル)シクロヘキサン;N,N,N′,N′−テトラ−p−トリル−4,4′−ジアミノビフェニル;1,1−ビス(4−ジ−p−トリルアミノフェニル)−4−フェニルシクロヘキサン;ビス(4−ジメチルアミノ−2−メチルフェニル)フェニルメタン;ビス(4−ジ−p−トリルアミノフェニル)フェニルメタン;N,N′−ジフェニル−N,N′−ジ(4−メトキシフェニル)−4,4′−ジアミノビフェニル;N,N,N′,N′−テトラフェニル−4,4′−ジアミノジフェニルエーテル;4,4′−ビス(ジフェニルアミノ)クオードリフェニル;N,N,N−トリ(p−トリル)アミン;4−(ジ−p−トリルアミノ)−4′−〔4−(ジ−p−トリルアミノ)スチリル〕スチルベン;4−N,N−ジフェニルアミノ−(2−ジフェニルビニル)ベンゼン;3−メトキシ−4′−N,N−ジフェニルアミノスチルベンゼン;N−フェニルカルバゾール、更には米国特許第5,061,569号明細書に記載されている2個の縮合芳香族環を分子内に有するもの、例えば、4,4′−ビス〔N−(1−ナフチル)−N−フェニルアミノ〕ビフェニル(NPD)、特開平4−308688号公報に記載されているトリフェニルアミンユニットが3つスターバースト型に連結された4,4′,4″−トリス〔N−(3−メチルフェニル)−N−フェニルアミノ〕トリフェニルアミン(MTDATA)等が挙げられる。 Representative examples of aromatic tertiary amine compounds and styrylamine compounds include N, N, N ', N'-tetraphenyl-4,4'-diaminophenyl; N, N'-diphenyl-N, N'- Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminophenyl) phenylmethane; N, N'-diphenyl-N, N ' − (4-methoxyphenyl) -4,4'-diaminobiphenyl; N, N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether; 4,4'-bis (diphenylamino) quadriphenyl; N, N, N-tri (p-tolyl) amine; 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene; 4-N, N-diphenylamino- (2-diphenylvinyl) benzene; 3-methoxy-4′-N, N-diphenylaminostilbenzene; N-phenylcarbazole, and also two of those described in US Pat. No. 5,061,569. Having a condensed aromatic ring in the molecule, for example, 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPD), JP-A-4-3086 4,4 ', 4 "-tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine in which three triphenylamine units described in Japanese Patent No. 8 are linked in a starburst type ( MTDATA) and the like.
更にこれらの材料を高分子鎖に導入した、またはこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。また、p型−Si、p型−SiC等の無機化合物も正孔注入材料、正孔輸送材料として使用することができる。 Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used. In addition, inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
また、特開平11−251067号公報、J.Huang et.al.著文献(Applied Physics Letters 80(2002),p.139)に記載されているような、所謂p型正孔輸送材料を用いることもできる。本発明においては、より高効率の発光素子が得られることからこれらの材料を用いることが好ましい。 JP-A-11-251067, J. Org. Huang et. al. A so-called p-type hole transport material as described in a book (Applied Physics Letters 80 (2002), p. 139) can also be used. In the present invention, these materials are preferably used because a light-emitting element with higher efficiency can be obtained.
正孔輸送層は上記正孔輸送材料を、例えば、真空蒸着法、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の公知の方法により、薄膜化することにより形成することができる。正孔輸送層の膜厚については特に制限はないが、通常は5nm〜5μm程度、好ましくは5nm〜200nmである。この正孔輸送層は上記材料の1種または2種以上からなる一層構造であってもよい。 The hole transport layer can be formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. it can. Although there is no restriction | limiting in particular about the film thickness of a positive hole transport layer, Usually, 5 nm-about 5 micrometers, Preferably it is 5 nm-200 nm. The hole transport layer may have a single layer structure composed of one or more of the above materials.
また、不純物をドープしたp性の高い正孔輸送層を用いることもできる。その例としては、特開平4−297076号公報、特開2000−196140号公報、同2001−102175号公報の各公報、J.Appl.Phys.,95,5773(2004)等に記載されたものが挙げられる。 Alternatively, a hole transport layer having a high p property doped with impurities can be used. Examples thereof include JP-A-4-297076, JP-A-2000-196140, 2001-102175, J. Pat. Appl. Phys. 95, 5773 (2004), and the like.
本発明においては、このようなp性の高い正孔輸送層を用いることが、より低消費電力の素子を作製することができるため好ましい。 In the present invention, it is preferable to use a hole transport layer having such a high p property because a device with lower power consumption can be produced.
《電子輸送層》
電子輸送層とは電子を輸送する機能を有する材料からなり、広い意味で電子注入層、正孔阻止層も電子輸送層に含まれる。電子輸送層は単層または複数層設けることができる。
《Electron transport layer》
The electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer. The electron transport layer can be provided as a single layer or a plurality of layers.
従来、単層の電子輸送層、及び複数層とする場合は発光層に対して陰極側に隣接する電子輸送層に用いられる電子輸送材料(正孔阻止材料を兼ねる)としては、陰極より注入された電子を発光層に伝達する機能を有していればよく、その材料としては従来公知の化合物の中から任意のものを選択して用いることができ、例えば、ニトロ置換フルオレン誘導体、ジフェニルキノン誘導体、チオピランジオキシド誘導体、カルボジイミド、フレオレニリデンメタン誘導体、アントラキノジメタン及びアントロン誘導体、オキサジアゾール誘導体等が挙げられる。更に上記オキサジアゾール誘導体において、オキサジアゾール環の酸素原子を硫黄原子に置換したチアジアゾール誘導体、電子吸引基として知られているキノキサリン環を有するキノキサリン誘導体も、電子輸送材料として用いることができる。更にこれらの材料を高分子鎖に導入した、またはこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。 Conventionally, in the case of a single electron transport layer and a plurality of layers, an electron transport material (also serving as a hole blocking material) used for an electron transport layer adjacent to the light emitting layer on the cathode side is injected from the cathode. As long as it has a function of transferring electrons to the light-emitting layer, any material can be selected and used from among conventionally known compounds. For example, nitro-substituted fluorene derivatives, diphenylquinone derivatives Thiopyrandioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane and anthrone derivatives, oxadiazole derivatives and the like. Furthermore, in the above oxadiazole derivative, a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group can also be used as an electron transport material. Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
また8−キノリノール誘導体の金属錯体、例えば、トリス(8−キノリノール)アルミニウム(Alq)、トリス(5,7−ジクロロ−8−キノリノール)アルミニウム、トリス(5,7−ジブロモ−8−キノリノール)アルミニウム、トリス(2−メチル−8−キノリノール)アルミニウム、トリス(5−メチル−8−キノリノール)アルミニウム、ビス(8−キノリノール)亜鉛(Znq)等、及びこれらの金属錯体の中心金属がIn、Mg、Cu、Ca、Sn、GaまたはPbに置き替わった金属錯体も、電子輸送材料として用いることができる。その他、メタルフリーもしくはメタルフタロシアニン、またはそれらの末端がアルキル基やスルホン酸基等で置換されているものも、電子輸送材料として好ましく用いることができる。また、発光層の材料として例示したジスチリルピラジン誘導体も、電子輸送材料として用いることができるし、正孔注入層、正孔輸送層と同様にn型−Si、n型−SiC等の無機半導体も電子輸送材料として用いることができる。 Also, metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) aluminum, Tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), etc., and the central metals of these metal complexes are In, Mg, Cu , Ca, Sn, Ga, or Pb can also be used as an electron transport material. In addition, metal-free or metal phthalocyanine, or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transporting material. In addition, the distyrylpyrazine derivative exemplified as the material of the light emitting layer can also be used as an electron transport material, and an inorganic semiconductor such as n-type-Si, n-type-SiC, etc. as in the case of the hole injection layer and the hole transport layer. Can also be used as an electron transporting material.
電子輸送層は上記電子輸送材料を、例えば、真空蒸着法、スピンコート法、キャスト法、インクジェット法を含む印刷法、LB法等の公知の方法により、薄膜化することにより形成することができる。電子輸送層の膜厚については特に制限はないが、通常は5nm〜5μm程度、好ましくは5nm〜200nmである。電子輸送層は上記材料の1種または2種以上からなる一層構造であってもよい。 The electron transport layer can be formed by thinning the electron transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. Although there is no restriction | limiting in particular about the film thickness of an electron carrying layer, Usually, 5 nm-about 5 micrometers, Preferably it is 5 nm-200 nm. The electron transport layer may have a single layer structure composed of one or more of the above materials.
また、不純物をドープしたn性の高い電子輸送層を用いることもできる。その例としては、特開平4−297076号公報、同10−270172号公報、特開2000−196140号公報、同2001−102175号公報、J.Appl.Phys.,95,5773(2004)等に記載されたものが挙げられる。 Further, an electron transport layer having a high n property doped with impurities can also be used. Examples thereof include JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
本発明においては、このようなn性の高い電子輸送層を用いることがより低消費電力の素子を作製することができるため好ましい。 In the present invention, it is preferable to use an electron transport layer having such a high n property because an element with lower power consumption can be manufactured.
《陽極》
有機EL素子における陽極としては、仕事関数の大きい(4eV以上)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが好ましく用いられる。このような電極物質の具体例としては、Au等の金属、CuI、インジウムチンオキシド(ITO)、SnO2、ZnO等の導電性透明材料が挙げられる。また、IDIXO(In2O3−ZnO)等非晶質で透明導電膜を作製可能な材料を用いてもよい。陽極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させ、フォトリソグラフィー法で所望の形状のパターンを形成してもよく、あるいはパターン精度をあまり必要としない場合は(100μm以上程度)、上記電極物質の蒸着やスパッタリング時に所望の形状のマスクを介してパターンを形成してもよい。あるいは、有機導電性化合物のように塗布可能な物質を用いる場合には、印刷方式、コーティング方式等湿式製膜法を用いることもできる。この陽極より発光を取り出す場合には、透過率を10%より大きくすることが望ましく、また陽極としてのシート抵抗は数百Ω/□以下が好ましい。更に膜厚は材料にもよるが、通常は、10nm〜1000nmの範囲であり、好ましくは10nm〜200nmの範囲で選ばれる。
"anode"
As the anode in the organic EL element, an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used. Specific examples of such electrode substances include metals such as Au, and conductive transparent materials such as CuI, indium tin oxide (ITO), SnO 2 , and ZnO. Alternatively, an amorphous material such as IDIXO (In 2 O 3 —ZnO) capable of forming a transparent conductive film may be used. For the anode, these electrode materials may be formed into a thin film by a method such as vapor deposition or sputtering, and a pattern having a desired shape may be formed by a photolithography method, or when pattern accuracy is not so high (about 100 μm or more) A pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material. Or when using the substance which can be apply | coated like an organic electroconductivity compound, wet film forming methods, such as a printing system and a coating system, can also be used. When light emission is extracted from the anode, it is desirable that the transmittance be greater than 10%, and the sheet resistance as the anode is preferably several hundred Ω / □ or less. Further, although the film thickness depends on the material, it is usually in the range of 10 nm to 1000 nm, preferably in the range of 10 nm to 200 nm.
《陰極》
一方、陰極としては仕事関数の小さい(4eV以下)金属(電子注入性金属と称する)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。このような電極物質の具体例としては、ナトリウム、ナトリウム−カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、インジウム、リチウム/アルミニウム混合物、希土類金属等が挙げられる。これらの中で、電子注入性及び酸化等に対する耐久性の点から、電子注入性金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。陰極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させることにより、作製することができる。また、陰極としてのシート抵抗は数百Ω/□以下が好ましく、膜厚は通常10nm〜5μm、好ましくは50nm〜200nmの範囲で選ばれる。尚、発光した光を透過させるため、有機EL素子の陽極または陰極のいずれか一方が透明または半透明であれば発光輝度が向上し好都合である。
"cathode"
On the other hand, as the cathode, a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like. Among these, from the point of durability against electron injection and oxidation, etc., a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this, for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred. The cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. The sheet resistance as a cathode is preferably several hundred Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, preferably 50 nm to 200 nm. In order to transmit the emitted light, if either one of the anode or the cathode of the organic EL element is transparent or translucent, the light emission luminance is improved, which is convenient.
また、陰極に上記金属を1nm〜20nmの膜厚で作製した後に、陽極の説明で挙げた導電性透明材料をその上に作製することで、透明または半透明の陰極を作製することができ、これを応用することで陽極と陰極の両方が透過性を有する素子を作製することができる。 Moreover, after producing the said metal by the film thickness of 1 nm-20 nm to a cathode, the transparent or semi-transparent cathode can be produced by producing the electroconductive transparent material quoted by description of the anode on it, By applying this, an element in which both the anode and the cathode are transmissive can be manufactured.
《支持基板》
本発明の有機EL素子に用いることのできる支持基板(以下、基体、基板、基材、支持体等とも言う)としては、ガラス、プラスチック等の種類には特に限定はなく、また透明であっても不透明であってもよい。支持基板側から光を取り出す場合には、支持基板は透明であることが好ましい。好ましく用いられる透明な支持基板としては、ガラス、石英、透明樹脂フィルムを挙げることができる。特に好ましい支持基板は、有機EL素子にフレキシブル性を与えることが可能な樹脂フィルムである。
《Support substrate》
As a support substrate (hereinafter also referred to as a substrate, substrate, substrate, support, etc.) that can be used in the organic EL device of the present invention, there is no particular limitation on the type of glass, plastic, etc., and it is transparent. May be opaque. When extracting light from the support substrate side, the support substrate is preferably transparent. Examples of the transparent support substrate preferably used include glass, quartz, and a transparent resin film. A particularly preferable support substrate is a resin film capable of giving flexibility to the organic EL element.
樹脂フィルムとしては、例えば、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)等のポリエステル、ポリエチレン、ポリプロピレン、セロファン、セルロースジアセテート、セルローストリアセテート、セルロースアセテートブチレート、セルロースアセテートプロピオネート(CAP)、セルロースアセテートフタレート(TAC)、セルロースナイトレート等のセルロースエステル類またはそれらの誘導体、ポリ塩化ビニリデン、ポリビニルアルコール、ポリエチレンビニルアルコール、シンジオタクティックポリスチレン、ポリカーボネート、ノルボルネン樹脂、ポリメチルペンテン、ポリエーテルケトン、ポリイミド、ポリエーテルスルホン(PES)、ポリフェニレンスルフィド、ポリスルホン類、ポリエーテルイミド、ポリエーテルケトンイミド、ポリアミド、フッ素樹脂、ナイロン、ポリメチルメタクリレート、アクリルあるいはポリアリレート類、アートン(商品名JSR社製)あるいはアペル(商品名三井化学社製)といったシクロオレフィン系樹脂等を挙げられる。 Examples of the resin film include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones Cycloolefin resins such as polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by Mitsui Chemicals) Can be mentioned.
樹脂フィルムの表面には、無機物、有機物の被膜またはその両者のハイブリッド被膜が形成されていてもよく、JIS K 7129−1992に準拠した方法で測定された、水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が0.01g/(m2・24h)以下のバリア性フィルムであることが好ましく、更には、JIS K 7126−1987に準拠した方法で測定された酸素透過度が、10-3cm3/(m2・24h・atm)以下、水蒸気透過度が10-3g/(m2・24h)以下の高バリア性フィルムであることが好ましく、前記の水蒸気透過度が10-5g/(m2・24h)以下であることが更に好ましい。 On the surface of the resin film, an inorganic film, an organic film, or a hybrid film of both may be formed. Water vapor permeability (25 ± 0.5 ° C.) measured by a method according to JIS K 7129-1992. , Relative humidity (90 ± 2)% RH) is preferably 0.01 g / (m 2 · 24 h) or less, and further, oxygen measured by a method according to JIS K 7126-1987. A high barrier film having a permeability of 10 −3 cm 3 / (m 2 · 24 h · atm) or less and a water vapor permeability of 10 −3 g / (m 2 · 24 h) or less is preferable. More preferably, the transmittance is 10 −5 g / (m 2 · 24 h) or less.
バリア膜を形成する材料としては、水分や酸素等素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素等を用いることができる。更に該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることがより好ましい。無機層と有機層の積層順については特に制限はないが、両者を交互に複数回積層させることが好ましい。 As a material for forming the barrier film, any material may be used as long as it has a function of suppressing entry of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like can be used. Further, in order to improve the brittleness of the film, it is more preferable to have a laminated structure of these inorganic layers and organic material layers. Although there is no restriction | limiting in particular about the lamination | stacking order of an inorganic layer and an organic layer, It is preferable to laminate | stack both alternately several times.
バリア膜の形成方法については特に限定はなく、例えば、真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ−イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができるが、特開2004−68143号公報に記載されているような大気圧プラズマ重合法によるものが特に好ましい。 The method for forming the barrier film is not particularly limited. For example, the vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma weight A combination method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, and the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is particularly preferable.
不透明な支持基板としては、例えば、アルミ、ステンレス等の金属板、フィルムや不透明樹脂基板、セラミック製の基板等が挙げられる。 Examples of the opaque support substrate include metal plates such as aluminum and stainless steel, films, opaque resin substrates, and ceramic substrates.
本発明の有機EL素子の発光の室温における外部取り出し効率は、1%以上であることが好ましく、より好ましくは5%以上である。ここに、外部取り出し量子効率(%)=有機EL素子外部に発光した光子数/有機EL素子に流した電子数×100である。 The external extraction efficiency at room temperature of light emission of the organic EL device of the present invention is preferably 1% or more, more preferably 5% or more. Here, the external extraction quantum efficiency (%) = the number of photons emitted to the outside of the organic EL element / the number of electrons sent to the organic EL element × 100.
また、カラーフィルター等の色相改良フィルター等を併用しても、有機EL素子からの発光色を蛍光体を用いて多色へ変換する色変換フィルターを併用してもよい。色変換フィルターを用いる場合においては、有機EL素子の発光のλmaxは480nm以下が好ましい。 In addition, a hue improvement filter such as a color filter may be used in combination, or a color conversion filter that converts the emission color from the organic EL element into multiple colors using a phosphor. In the case of using a color conversion filter, the λmax of light emission of the organic EL element is preferably 480 nm or less.
《封止》
本発明に用いられる封止手段としては、例えば、封止部材と電極、支持基板とを接着剤で接着する方法を挙げることができる。
<Sealing>
As a sealing means used for this invention, the method of adhere | attaching a sealing member, an electrode, and a support substrate with an adhesive agent can be mentioned, for example.
封止部材としては、有機EL素子の表示領域を覆うように配置されておればよく、凹板状でも平板状でもよい。また透明性、電気絶縁性は特に問わない。 As a sealing member, it should just be arrange | positioned so that the display area | region of an organic EL element may be covered, and concave plate shape or flat plate shape may be sufficient. Further, transparency and electrical insulation are not particularly limited.
具体的には、ガラス板、ポリマー板・フィルム、金属板・フィルム等が挙げられる。ガラス板としては、特にソーダ石灰ガラス、バリウム・ストロンチウム含有ガラス、鉛ガラス、アルミノケイ酸ガラス、ホウケイ酸ガラス、バリウムホウケイ酸ガラス、石英等を挙げることができる。また、ポリマー板としては、ポリカーボネート、アクリル、ポリエチレンテレフタレート、ポリエーテルサルファイド、ポリサルフォン等を挙げることができる。金属板としては、ステンレス、鉄、銅、アルミニウム、マグネシウム、ニッケル、亜鉛、クロム、チタン、モリブテン、シリコン、ゲルマニウム及びタンタルからなる群から選ばれる一種以上の金属または合金からなるものが挙げられる。 Specific examples include a glass plate, a polymer plate / film, and a metal plate / film. Examples of the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz. Examples of the polymer plate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone. Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
本発明においては、素子を薄膜化できるということからポリマーフィルム、金属フィルムを好ましく使用することができる。更には、ポリマーフィルムは、JIS K 7126−1987に準拠した方法で測定された酸素透過度が、1×10-3cm3/(m2・24h・atm)以下、JIS K 7129−1992に準拠した方法で測定された水蒸気透過度(25±0.5℃、相対湿度(90±2)%RH)が1×10-3g/(m2・24h)以下のものであることが好ましい。 In the present invention, a polymer film and a metal film can be preferably used because the element can be thinned. Furthermore, the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 × 10 −3 cm 3 / (m 2 · 24 h · atm) or less, according to JIS K 7129-1992. The water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)% RH) measured by the above method is preferably 1 × 10 −3 g / (m 2 · 24 h) or less.
封止部材を凹状に加工するのは、サンドブラスト加工、化学エッチング加工等が使われる。 For processing the sealing member into a concave shape, sandblasting, chemical etching, or the like is used.
接着剤として具体的には、アクリル酸系オリゴマー、メタクリル酸系オリゴマーの反応性ビニル基を有する光硬化及び熱硬化型接着剤、2−シアノアクリル酸エステル等の湿気硬化型等の接着剤を挙げることができる。また、エポキシ系等の熱及び化学硬化型(二液混合)を挙げることができる。また、ホットメルト型のポリアミド、ポリエステル、ポリオレフィンを挙げることができる。また、カチオン硬化タイプの紫外線硬化型エポキシ樹脂接着剤を挙げることができる。 Specific examples of the adhesive include photocuring and thermosetting adhesives having reactive vinyl groups such as acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylates. be able to. Moreover, heat | fever and chemical curing types (two-component mixing), such as an epoxy type, can be mentioned. Moreover, hot-melt type polyamide, polyester, and polyolefin can be mentioned. Moreover, a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
なお、有機EL素子が熱処理により劣化する場合があるので、室温から80℃までに接着硬化できるものが好ましい。また、前記接着剤中に乾燥剤を分散させておいてもよい。封止部分への接着剤の塗布は市販のディスペンサーを使ってもよいし、スクリーン印刷のように印刷してもよい。 In addition, since an organic EL element may deteriorate by heat processing, what can be adhesive-hardened from room temperature to 80 degreeC is preferable. A desiccant may be dispersed in the adhesive. Application | coating of the adhesive agent to a sealing part may use commercially available dispenser, and may print like screen printing.
また、有機層を挟み支持基板と対向する側の電極の外側に該電極と有機層を被覆し、支持基板と接する形で無機物、有機物の層を形成し封止膜とすることも好適にできる。この場合、該膜を形成する材料としては、水分や酸素等素子の劣化をもたらすものの浸入を抑制する機能を有する材料であればよく、例えば、酸化珪素、二酸化珪素、窒化珪素等を用いることができる。更に該膜の脆弱性を改良するために、これら無機層と有機材料からなる層の積層構造を持たせることが好ましい。これらの膜の形成方法については、特に限定はなく、例えば真空蒸着法、スパッタリング法、反応性スパッタリング法、分子線エピタキシー法、クラスタ−イオンビーム法、イオンプレーティング法、プラズマ重合法、大気圧プラズマ重合法、プラズマCVD法、レーザーCVD法、熱CVD法、コーティング法等を用いることができる。 In addition, it is also preferable that the electrode and the organic layer are coated on the outside of the electrode facing the support substrate with the organic layer interposed therebetween, and an inorganic or organic layer is formed in contact with the support substrate to form a sealing film. . In this case, the material for forming the film may be any material that has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can. Further, in order to improve the brittleness of the film, it is preferable to have a laminated structure of these inorganic layers and layers made of organic materials. The method for forming these films is not particularly limited. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster-ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
封止部材と有機EL素子の表示領域との間隙には、気相及び液相では、窒素、アルゴン等の不活性気体やフッ化炭化水素、シリコンオイルのような不活性液体を注入することが好ましい。また真空とすることも可能である。また、内部に吸湿性化合物を封入することもできる。 In the gap between the sealing member and the display area of the organic EL element, an inert gas such as nitrogen or argon, or an inert liquid such as fluorinated hydrocarbon or silicon oil can be injected in the gas phase and liquid phase. preferable. A vacuum is also possible. Moreover, a hygroscopic compound can also be enclosed inside.
吸湿性化合物としては、例えば、金属酸化物(例えば、酸化ナトリウム、酸化カリウム、酸化カルシウム、酸化バリウム、酸化マグネシウム、酸化アルミニウム等)、硫酸塩(例えば、硫酸ナトリウム、硫酸カルシウム、硫酸マグネシウム、硫酸コバルト等)、金属ハロゲン化物(例えば、塩化カルシウム、塩化マグネシウム、フッ化セシウム、フッ化タンタル、臭化セリウム、臭化マグネシウム、沃化バリウム、沃化マグネシウム等)、過塩素酸類(例えば、過塩素酸バリウム、過塩素酸マグネシウム等)等が挙げられ、硫酸塩、金属ハロゲン化物及び過塩素酸類においては無水塩が好適に用いられる。 Examples of the hygroscopic compound include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate). Etc.), metal halides (eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.), perchloric acids (eg perchloric acid) Barium, magnesium perchlorate, and the like), and anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
《保護膜、保護板》
有機層を挟み支持基板と対向する側の前記封止膜、あるいは前記封止用フィルムの外側に、素子の機械的強度を高めるために保護膜、あるいは保護板を設けてもよい。特に封止が前記封止膜により行われている場合には、その機械的強度は必ずしも高くないため、このような保護膜、保護板を設けることが好ましい。これに使用することができる材料としては、前記封止に用いたのと同様なガラス板、ポリマー板・フィルム、金属板・フィルム等を用いることができるが、軽量且つ薄膜化ということからポリマーフィルムを用いることが好ましい。
《Protective film, protective plate》
In order to increase the mechanical strength of the element, a protective film or a protective plate may be provided on the outer side of the sealing film on the side facing the support substrate with the organic layer interposed therebetween or on the sealing film. In particular, when the sealing is performed by the sealing film, the mechanical strength is not necessarily high, and thus it is preferable to provide such a protective film and a protective plate. As a material that can be used for this, the same glass plate, polymer plate / film, metal plate / film, and the like used for the sealing can be used, but the polymer film is light and thin. Is preferably used.
《光取り出し》
有機EL素子は空気よりも屈折率の高い(屈折率が1.7〜2.1程度)層の内部で発光し、発光層で発生した光のうち15%から20%程度の光しか取り出せないことが一般的に言われている。これは、臨界角以上の角度θで界面(透明基板と空気との界面)に入射する光は、全反射を起こし素子外部に取り出すことができないことや、透明電極ないし発光層と透明基板との間で光が全反射を起こし、光が透明電極ないし発光層を導波し、結果として光が素子側面方向に逃げるためである。
《Light extraction》
The organic EL element emits light inside a layer having a refractive index higher than that of air (refractive index is about 1.7 to 2.1) and can extract only about 15% to 20% of the light generated in the light emitting layer. It is generally said. This is because light incident on the interface (interface between the transparent substrate and air) at an angle θ greater than the critical angle causes total reflection and cannot be extracted outside the device, This is because the light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the element side surface.
この光の取り出しの効率を向上させる手法としては、例えば、透明基板表面に凹凸を形成し、透明基板と空気界面での全反射を防ぐ方法(米国特許第4,774,435号明細書)、基板に集光性を持たせることにより効率を向上させる方法(特開昭63−314795号公報)、素子の側面等に反射面を形成する方法(特開平1−220394号公報)、基板と発光体の間に中間の屈折率を持つ平坦層を導入し、反射防止膜を形成する方法(特開昭62−172691号公報)、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法(特開2001−202827号公報)、基板、透明電極層や発光層のいずれかの層間(含む、基板と外界間)に回折格子を形成する方法(特開平11−283751号公報)等がある。 As a method for improving the light extraction efficiency, for example, a method of forming irregularities on the surface of the transparent substrate to prevent total reflection at the interface between the transparent substrate and the air (US Pat. No. 4,774,435), A method of improving efficiency by providing a light collecting property to a substrate (Japanese Patent Laid-Open No. 63-314795), a method of forming a reflective surface on a side surface of an element (Japanese Patent Laid-Open No. 1-220394), and light emission from a substrate A method of forming an antireflection film by introducing a flat layer having an intermediate refractive index between the bodies (Japanese Patent Laid-Open No. 62-172691), a flat having a lower refractive index between the substrate and the light emitter than the substrate A method of introducing a layer (Japanese Patent Laid-Open No. 2001-202827), a method of forming a diffraction grating between any one of a substrate, a transparent electrode layer and a light emitting layer (including between the substrate and the outside) (Japanese Patent Laid-Open No. 11-283951) Gazette).
本発明においては、これらの方法を本発明の有機EL素子と組み合わせて用いることができるが、基板と発光体の間に基板よりも低屈折率を持つ平坦層を導入する方法、あるいは基板、透明電極層や発光層のいずれかの層間(含む、基板と外界間)に回折格子を形成する方法を好適に用いることができる。 In the present invention, these methods can be used in combination with the organic EL device of the present invention. However, a method of introducing a flat layer having a lower refractive index than the substrate between the substrate and the light emitter, or a substrate, transparent A method of forming a diffraction grating between any layers of the electrode layer and the light emitting layer (including between the substrate and the outside) can be suitably used.
本発明はこれらの手段を組み合わせることにより、更に高輝度あるいは耐久性に優れた素子を得ることができる。 In the present invention, by combining these means, it is possible to obtain an element having higher luminance or durability.
透明電極と透明基板の間に低屈折率の媒質を光の波長よりも長い厚みで形成すると、透明電極から出てきた光は、媒質の屈折率が低いほど外部への取り出し効率が高くなる。 When a medium having a low refractive index is formed between the transparent electrode and the transparent substrate with a thickness longer than the wavelength of light, the light extracted from the transparent electrode has a higher extraction efficiency to the outside as the refractive index of the medium is lower.
低屈折率層としては、例えば、エアロゲル、多孔質シリカ、フッ化マグネシウム、フッ素系ポリマー等が挙げられる。透明基板の屈折率は一般に1.5〜1.7程度であるので、低屈折率層は屈折率がおよそ1.5以下であることが好ましい。また、更に1.35以下であることが好ましい。 Examples of the low refractive index layer include aerogel, porous silica, magnesium fluoride, and a fluorine-based polymer. Since the refractive index of the transparent substrate is generally about 1.5 to 1.7, the low refractive index layer preferably has a refractive index of about 1.5 or less. Further, it is preferably 1.35 or less.
また、低屈折率媒質の厚みは媒質中の波長の2倍以上となるのが望ましい。これは低屈折率媒質の厚みが、光の波長程度になってエバネッセントで染み出した電磁波が基板内に入り込む膜厚になると、低屈折率層の効果が薄れるからである。 The thickness of the low refractive index medium is preferably at least twice the wavelength in the medium. This is because the effect of the low refractive index layer is diminished when the thickness of the low refractive index medium is about the wavelength of light and the electromagnetic wave that has exuded by evanescent enters the substrate.
全反射を起こす界面もしくはいずれかの媒質中に回折格子を導入する方法は、光取り出し効率の向上効果が高いという特徴がある。この方法は回折格子が1次の回折や2次の回折といった所謂ブラッグ回折により、光の向きを屈折とは異なる特定の向きに変えることができる性質を利用して、発光層から発生した光のうち層間での全反射等により外に出ることができない光を、いずれかの層間もしくは、媒質中(透明基板内や透明電極内)に回折格子を導入することで光を回折させ、光を外に取り出そうとするものである。 The method of introducing a diffraction grating into an interface or any medium that causes total reflection is characterized by a high effect of improving light extraction efficiency. This method uses the property that the diffraction grating can change the direction of light to a specific direction different from refraction by so-called Bragg diffraction such as first-order diffraction and second-order diffraction. Light that cannot be emitted due to total internal reflection between layers is diffracted by introducing a diffraction grating in any layer or medium (in a transparent substrate or transparent electrode), and the light is removed. I want to take it out.
導入する回折格子は、二次元的な周期屈折率を持っていることが望ましい。これは発光層で発光する光はあらゆる方向にランダムに発生するので、ある方向にのみ周期的な屈折率分布を持っている一般的な1次元回折格子では、特定の方向に進む光しか回折されず、光の取り出し効率がさほど上がらない。しかしながら、屈折率分布を二次元的な分布にすることにより、あらゆる方向に進む光が回折され、光の取り出し効率が上がる。 The introduced diffraction grating desirably has a two-dimensional periodic refractive index. This is because light emitted from the light-emitting layer is randomly generated in all directions, so in a general one-dimensional diffraction grating having a periodic refractive index distribution only in a certain direction, only light traveling in a specific direction is diffracted. Therefore, the light extraction efficiency does not increase so much. However, by making the refractive index distribution a two-dimensional distribution, light traveling in all directions is diffracted, and light extraction efficiency is increased.
回折格子を導入する位置としては前述の通り、いずれかの層間もしくは媒質中(透明基板内や透明電極内)でもよいが、光が発生する場所である有機発光層の近傍が望ましい。 As described above, the position where the diffraction grating is introduced may be in any of the layers or in the medium (in the transparent substrate or in the transparent electrode), but is preferably in the vicinity of the organic light emitting layer where light is generated.
このとき、回折格子の周期は媒質中の光の波長の約1/2〜3倍程度が好ましい。 At this time, the period of the diffraction grating is preferably about 1/2 to 3 times the wavelength of light in the medium.
回折格子の配列は正方形のラチス状、三角形のラチス状、ハニカムラチス状等、2次元的に配列が繰り返されることが好ましい。 The arrangement of the diffraction grating is preferably two-dimensionally repeated, such as a square lattice, a triangular lattice, or a honeycomb lattice.
《集光シート》
本発明の有機EL素子は基板の光取り出し側に、例えば、マイクロレンズアレイ状の構造を設けるように加工したり、あるいは所謂集光シートと組み合わせることにより、特定方向、例えば、素子発光面に対し正面方向に集光することにより、特定方向上の輝度を高めることができる。
<Condenser sheet>
The organic EL device of the present invention is processed on the light extraction side of the substrate so as to provide, for example, a microlens array structure, or combined with a so-called condensing sheet, for example, with respect to a specific direction, for example, the device light emitting surface. By condensing in the front direction, the luminance in a specific direction can be increased.
マイクロレンズアレイの例としては、基板の光取り出し側に一辺が30μmでその頂角が90度となるような四角錐を2次元に配列する。一辺は10μm〜100μmが好ましい。これより小さくなると回折の効果が発生して色付く、大きすぎると厚みが厚くなり好ましくない。 As an example of the microlens array, quadrangular pyramids having a side of 30 μm and an apex angle of 90 degrees are two-dimensionally arranged on the light extraction side of the substrate. One side is preferably 10 μm to 100 μm. If it becomes smaller than this, the effect of diffraction will generate | occur | produce and color, and if too large, thickness will become thick and is not preferable.
集光シートとしては、例えば、液晶表示装置のLEDバックライトで実用化されているものを用いることが可能である。このようなシートとして、例えば、住友スリーエム社製輝度上昇フィルム(BEF)等を用いることができる。プリズムシートの形状としては、例えば、基材に頂角90度、ピッチ50μmの△状のストライプが形成されたものであってもよいし、頂角が丸みを帯びた形状、ピッチをランダムに変化させた形状、その他の形状であってもよい。 As the condensing sheet, for example, a sheet that is put into practical use in an LED backlight of a liquid crystal display device can be used. As such a sheet, for example, a brightness enhancement film (BEF) manufactured by Sumitomo 3M Limited can be used. As the shape of the prism sheet, for example, the base material may be formed by forming a △ -shaped stripe having a vertex angle of 90 degrees and a pitch of 50 μm, or the vertex angle is rounded and the pitch is changed randomly. Other shapes may be used.
また、発光素子からの光放射角を制御するために、光拡散板・フィルムを集光シートと併用してもよい。例えば、(株)きもと製拡散フィルム(ライトアップ)等を用いることができる。 Moreover, in order to control the light emission angle from a light emitting element, you may use together a light diffusing plate and a film with a condensing sheet. For example, a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.
《有機EL素子の作製方法》
本発明の有機EL素子の作製方法の一例として、陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極からなる有機EL素子の作製法を説明する。
<< Method for producing organic EL element >>
As an example of the method for producing the organic EL device of the present invention, a method for producing an organic EL device comprising an anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode will be described.
まず適当な基体上に所望の電極物質、例えば、陽極用物質からなる薄膜を1μm以下、好ましくは10nm〜200nmの膜厚になるように、蒸着やスパッタリング等の方法により形成させ陽極を作製する。 First, a desired electrode material, for example, a thin film made of an anode material is formed on a suitable substrate so as to have a film thickness of 1 μm or less, preferably 10 nm to 200 nm, to form an anode.
次に、この上に有機EL素子材料である正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層、正孔阻止層の有機化合物薄膜を形成させる。 Next, an organic compound thin film of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a hole blocking layer, which are organic EL element materials, is formed thereon.
これら各層の形成方法としては、前記の如く蒸着法、ウェットプロセス(スピンコート法、キャスト法、インクジェット法、印刷法)等があるが、均質な膜が得られやすく、且つピンホールが生成しにくい等の点から、本発明においてはスピンコート法、インクジェット法、印刷法等の塗布法による製膜が好ましい。 As a method for forming each of these layers, there are a vapor deposition method, a wet process (spin coating method, casting method, ink jet method, printing method) and the like as described above, but it is easy to obtain a homogeneous film and it is difficult to generate pinholes. In view of the above, in the present invention, film formation by a coating method such as a spin coating method, an ink jet method, or a printing method is preferable.
本発明に係る有機EL材料を溶解または分散する液媒体としては、例えば、メチルエチルケトン、シクロヘキサノン等のケトン類、酢酸エチル等の脂肪酸エステル類、ジクロロベンゼン等のハロゲン化炭化水素類、トルエン、キシレン、メシチレン、シクロヘキシルベンゼン等の芳香族炭化水素類、シクロヘキサン、デカリン、ドデカン等の脂肪族炭化水素類、DMF、DMSO等の有機溶媒を用いることができる。また分散方法としては、超音波、高剪断力分散やメディア分散等の分散方法により分散することができる。 Examples of the liquid medium for dissolving or dispersing the organic EL material according to the present invention include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, toluene, xylene, and mesitylene. Aromatic hydrocarbons such as cyclohexylbenzene, aliphatic hydrocarbons such as cyclohexane, decalin, and dodecane, and organic solvents such as DMF and DMSO can be used. Moreover, as a dispersion method, it can disperse | distribute by dispersion methods, such as an ultrasonic wave, high shear force dispersion | distribution, and media dispersion | distribution.
これらの層を形成後、その上に陰極用物質からなる薄膜を1μm以下、好ましくは、50nm〜200nmの範囲の膜厚になるように、例えば、蒸着やスパッタリング等の方法により形成させ、陰極を設けることにより所望の有機EL素子が得られる。 After these layers are formed, a thin film made of a cathode material is formed thereon by 1 μm or less, preferably by a method such as vapor deposition or sputtering so that the film thickness is in the range of 50 nm to 200 nm. By providing, a desired organic EL element can be obtained.
また作製順序を逆にして、陰極、電子注入層、電子輸送層、発光層、正孔輸送層、正孔注入層、陽極の順に作製することも可能である。このようにして得られた多色の表示装置に、直流電圧を印加する場合には陽極を+、陰極を−の極性として電圧2〜40V程度を印加すると発光が観測できる。また交流電圧を印加してもよい。なお、印加する交流の波形は任意でよい。 In addition, it is also possible to reverse the production order and produce the cathode, the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer, the hole injection layer, and the anode in this order. When a DC voltage is applied to the multicolor display device thus obtained, light emission can be observed by applying a voltage of about 2 to 40 V with the positive polarity of the anode and the negative polarity of the cathode. An alternating voltage may be applied. The alternating current waveform to be applied may be arbitrary.
《用途》
本発明の有機EL素子は、表示デバイス、ディスプレイ、各種発光光源として用いることができる。発光光源として、例えば、照明装置(家庭用照明、車内照明)、時計や液晶用バックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるがこれに限定するものではないが、特に液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。
<Application>
The organic EL element of the present invention can be used as a display device, a display, and various light emission sources. For example, lighting devices (home lighting, interior lighting), clock and liquid crystal backlights, billboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, light Although the light source of a sensor etc. are mentioned, It is not limited to this, Especially, it can use effectively for the use as a backlight of a liquid crystal display device, and a light source for illumination.
本発明の有機EL素子においては、必要に応じ製膜時にメタルマスクやインクジェットプリンティング法等でパターニングを施してもよい。パターニングする場合は、電極のみをパターニングしてもよいし、電極と発光層をパターニングしてもよいし、素子全層をパターニングしてもよく、素子の作製においては、従来公知の方法を用いることができる。 In the organic EL device of the present invention, patterning may be performed by a metal mask, an ink jet printing method, or the like at the time of film formation, if necessary. In the case of patterning, only the electrode may be patterned, the electrode and the light emitting layer may be patterned, or the entire layer of the element may be patterned. In the fabrication of the element, a conventionally known method is used. Can do.
本発明の有機EL素子や本発明に係る化合物の発光する色は、「新編色彩科学ハンドブック」(日本色彩学会編、東京大学出版会、1985)の108頁の図4.16において、分光放射輝度計CS−1000(コニカミノルタセンシング社製)で測定した結果をCIE色度座標に当てはめたときの色で決定される。
The light emission color of the organic EL device of the present invention and the compound according to the present invention is shown in FIG. 4.16 on
また、本発明の有機EL素子が白色素子の場合には、白色とは、2度視野角正面輝度を上記方法により測定した際に、1000cd/m2でのCIE1931表色系における色度がX=0.33±0.07、Y=0.33±0.1の領域内にあることを言う。 When the organic EL element of the present invention is a white element, white means that the chromaticity in the CIE1931 color system at 1000 cd / m 2 is X when the 2 ° viewing angle front luminance is measured by the above method. = 0.33 ± 0.07 and Y = 0.33 ± 0.1.
以下、実施例により本発明を説明するが、本発明はこれらに限定されない。なお、実施例において「%」の表示を用いるが、特に断りがない限り「質量%」を表す。 EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to these. In addition, although the display of "%" is used in an Example, unless otherwise indicated, "mass%" is represented.
実施例1
《有機EL素子1−1の作製》
陽極としてガラス上にITOを150nm成膜した基板(NHテクノグラス社製:NA−45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をiso−プロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。この透明支持基板を市販の真空蒸着装置の基板ホルダーに固定し、一方5つのタンタル製抵抗加熱ボートにα−NPD、CBP、Ir−12、BCP、Alq3をそれぞれ入れ、真空蒸着装置(第1真空槽)に取り付けた。
Example 1
<< Production of Organic EL Element 1-1 >>
After patterning on a substrate (made by NH Techno Glass Co., Ltd .: NA-45) having a 150 nm ITO film formed on glass as an anode, the transparent support substrate provided with this ITO transparent electrode was ultrasonically cleaned with iso-propyl alcohol. Then, it was dried with dry nitrogen gas, and UV ozone cleaning was performed for 5 minutes. The transparent support substrate is fixed to a substrate holder of a commercially available vacuum deposition apparatus, while α-NPD, CBP, Ir-12, BCP, and Alq 3 are placed in five tantalum resistance heating boats, respectively. (Vacuum chamber).
さらに、タンタル製抵抗加熱ボートにフッ化リチウムを、タングステン製抵抗加熱ボートにアルミニウムをそれぞれ入れ、真空蒸着装置の第2真空槽に取り付けた。 Further, lithium fluoride was placed in a resistance heating boat made of tantalum, and aluminum was placed in a resistance heating boat made of tungsten, and attached to the second vacuum tank of the vacuum evaporation apparatus.
まず、第1の真空槽を4×10-4Paまで減圧した後、α−NPDの入った前記加熱ボートに通電して加熱し、蒸着速度0.1〜0.2nm/秒で透明支持基板に膜厚20nmの厚さになるように蒸着し、正孔注入/輸送層を設けた。 First, after reducing the pressure of the first vacuum tank to 4 × 10 −4 Pa, the heating boat containing α-NPD was energized and heated, and the transparent support substrate was deposited at a deposition rate of 0.1 to 0.2 nm / sec. The film was deposited to a thickness of 20 nm, and a hole injection / transport layer was provided.
さらに、CBPの入った前記加熱ボートとIr−12の入ったボートをそれぞれ独立に通電して、発光ホストであるCBPと発光ドーパントであるIr−12の蒸着速度が100:6になるように調節し、膜厚30nmの厚さになるように蒸着し、発光層を設けた。 Further, the heating boat containing CBP and the boat containing Ir-12 are energized independently to adjust the deposition rate of CBP as the light emitting host and Ir-12 as the light emitting dopant to 100: 6. And it vapor-deposited so that it might become a film thickness of 30 nm, and provided the light emitting layer.
次いで、BCPの入った前記加熱ボートに通電して加熱し、蒸着速度0.1〜0.2nm/秒で厚さ10nmの正孔阻止層を設けた。さらにAlq3の入った前記加熱ボートを通電して加熱し、蒸着速度0.1〜0.2nm/秒で膜厚20nmの電子輸送層を設けた。 Subsequently, the said heating boat containing BCP was heated by supplying electricity, and a 10-nm-thick hole blocking layer was provided at a deposition rate of 0.1-0.2 nm / second. Further, the heating boat containing Alq 3 was heated by energization to provide an electron transport layer having a film thickness of 20 nm at a deposition rate of 0.1 to 0.2 nm / second.
次に、電子輸送層まで成膜した素子を真空のまま第2真空槽に移した後、電子輸送層の上にステンレス鋼製の長方形穴あきマスクが配置されるように装置外部からリモートコントロールして設置した。 Next, after the element deposited up to the electron transport layer was transferred to the second vacuum chamber while being vacuumed, it was remotely controlled from the outside of the apparatus so that a stainless steel rectangular perforated mask was placed on the electron transport layer. Installed.
第2真空槽を2×10-4Paまで減圧した後、フッ化リチウム入りのボートに通電して蒸着速度0.01〜0.02nm/秒で膜厚0.5nmの陰極バッファー層を設け、次いでアルミニウムの入ったボートに通電して、蒸着速度1〜2nm/秒で膜厚150nmの陰極をつけ、有機EL素子1−1を作製した。 After depressurizing the second vacuum tank to 2 × 10 −4 Pa, a cathode buffer layer having a film thickness of 0.5 nm was provided at a deposition rate of 0.01 to 0.02 nm / second by energizing a boat containing lithium fluoride. Next, a boat containing aluminum was energized, a cathode having a film thickness of 150 nm was attached at a deposition rate of 1 to 2 nm / second, and an organic EL device 1-1 was produced.
《有機EL素子1−2〜1−6の作製》
有機EL素子1−1の作製において、表1に記載のように発光ドーパントを変更した以外は同様にして、有機EL素子1−2〜1−6を作製した。
<< Production of Organic EL Elements 1-2 to 1-6 >>
In the production of the organic EL element 1-1, organic EL elements 1-2 to 1-6 were produced in the same manner except that the luminescent dopant was changed as shown in Table 1.
《有機EL素子の評価》
得られた有機EL素子1−2〜1−6を評価するに際しては、作製後の各有機EL素子の非発光面をガラスケースで覆い、厚み300μmのガラス基板を封止用基板として用いて、周囲にシール材として、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を適用し、これを上記陰極上に重ねて前記透明支持基板と密着させ、ガラス基板側からUV光を照射して、硬化させて、封止して、図3、図4に示すような照明装置を形成して評価した。
<< Evaluation of organic EL elements >>
When evaluating the obtained organic EL elements 1-2 to 1-6, the non-light-emitting surface of each organic EL element after production is covered with a glass case, and a glass substrate having a thickness of 300 μm is used as a sealing substrate. An epoxy-based photo-curing adhesive (Lux Track LC0629B manufactured by Toagosei Co., Ltd.) is applied as a sealing material in the periphery, and this is placed on the cathode to be in close contact with the transparent support substrate and irradiated with UV light from the glass substrate side. Then, it was cured and sealed, and an illumination device as shown in FIGS. 3 and 4 was formed and evaluated.
図3は照明装置の概略図を示し、有機EL素子101はガラスカバー102で覆われている(なお、ガラスカバーでの封止作業は、有機EL素子101を大気に接触させることなく窒素雰囲気下のグローブボックス(純度99.999%以上の高純度窒素ガスの雰囲気下)で行った)。図4は照明装置の断面図を示し、図4において、105は陰極、106は有機EL層、107は透明電極付きガラス基板を示す。なお、ガラスカバー102内には窒素ガス108が充填され、捕水剤109が設けられている。
FIG. 3 is a schematic diagram of the lighting device, and the
(外部取り出し量子効率)
有機EL素子を室温(約23〜25℃)、2.5mA/cm2の定電流条件下による点灯を行い、点灯開始直後の発光輝度(L)[cd/m2]を測定することにより、外部取り出し量子効率(η)を算出した。ここで、発光輝度の測定はCS−1000(コニカミノルタセンシング製)を用いた。外部取り出し量子効率は有機EL素子1−1を100とする相対値で表した。
(External quantum efficiency)
By lighting the organic EL element under a constant current condition of room temperature (about 23 to 25 ° C.) and 2.5 mA / cm 2 , and measuring the emission luminance (L) [cd / m 2 ] immediately after the start of lighting, The external extraction quantum efficiency (η) was calculated. Here, CS-1000 (manufactured by Konica Minolta Sensing) was used for measurement of light emission luminance. The external extraction quantum efficiency was expressed as a relative value with the organic EL element 1-1 as 100.
(発光寿命)
有機EL素子を室温下、2.5mA/cm2の定電流条件下による連続点灯を行い、初期輝度の半分の輝度になるのに要する時間(τ1/2)を測定した。発光寿命は有機EL素子1−1を100と設定する相対値で表した。
(Luminescent life)
The organic EL element was continuously lit at a constant current of 2.5 mA / cm 2 at room temperature, and the time (τ 1/2 ) required to achieve half the initial luminance was measured. The light emission lifetime was expressed as a relative value at which the organic EL element 1-1 was set to 100.
(発光色)
有機EL素子を室温下、2.5mA/cm2の定電流条件下による連続点灯を行った際の発光色を目視で評価した。
(Luminescent color)
The organic EL element was visually evaluated for the color of light emitted when the organic EL element was continuously lit at a constant current of 2.5 mA / cm 2 at room temperature.
得られた結果を表1に示す。 The obtained results are shown in Table 1.
表1から、本発明に係る金属錯体を用いて作製した有機EL素子は、比較例の有機EL素子に比べ、純青〜青緑色の短波な発光を持ちながら高い発光効率と発光寿命の長寿命化が達成できることが明らかである。 From Table 1, the organic EL device produced by using the metal complex according to the present invention has a high emission efficiency and a long emission life while having a short blue light emission of pure blue to blue green as compared with the organic EL device of the comparative example. It is clear that crystallization can be achieved.
実施例2
《有機EL素子2−1の作製》
25mm×25mm×0.5mmのガラス支持基板上に直流電源を用い、スパッタ法にてインジウム錫酸化物(ITO、インジウム/錫=95/5モル比)の陽極を形成した(厚み200nm)。この陽極の表面抵抗は10Ω/□であった。これにポリビニルカルバゾール(正孔輸送性バインダーポリマー)/Ir−12(青発光性オルトメタル化錯体)/2−(4−ビフェニリル)−5−(4−t−ブチルフェニル)−1,3,4−オキサジアゾール(電子輸送材)=200/2/50質量比を溶解したジクロロエタン溶液をスピンコーターで塗布し、100nmの発光層を得た。この有機化合物層の上にパターニングしたマスク(発光面積が5mm×5mmとなるマスク)を設置し、蒸着装置内で陰極バッファー層としてフッ化リチウム0.5nm及び陰極としてアルミニウム150nmを蒸着して陰極を設けて、青色発光の有機EL素子2−1を作製した。
Example 2
<< Preparation of Organic EL Element 2-1 >>
An anode of indium tin oxide (ITO, indium / tin = 95/5 molar ratio) was formed on a glass support substrate of 25 mm × 25 mm × 0.5 mm by a sputtering method using a direct current power (thickness: 200 nm). The surface resistance of this anode was 10Ω / □. Polyvinylcarbazole (hole transporting binder polymer) / Ir-12 (blue light-emitting orthometalated complex) / 2- (4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4 -Oxadiazole (electron transport material) = A dichloroethane solution in which a mass ratio of 200/2/50 was dissolved was applied by a spin coater to obtain a light-emitting layer having a thickness of 100 nm. A patterned mask (a mask with a light emission area of 5 mm × 5 mm) is placed on the organic compound layer, and lithium fluoride 0.5 nm is deposited as a cathode buffer layer and aluminum 150 nm is deposited as a cathode in a deposition apparatus to form a cathode. A blue light-emitting organic EL device 2-1 was prepared.
《有機EL素子2−2〜2−6の作製》
有機EL素子2−1の作製において、表2に記載のように発光ドーパントを変更した以外は同様にして、有機EL素子2−2〜2−6を作製した。
<< Production of Organic EL Elements 2-2 to 2-6 >>
In the production of the organic EL element 2-1, organic EL elements 2-2 to 2-6 were produced in the same manner except that the luminescent dopant was changed as shown in Table 2.
《有機EL素子の評価》
得られた有機EL素子2−1〜2−6を評価するに際しては、作製後の各有機EL素子の非発光面をガラスケースで覆い、厚み300μmのガラス基板を封止用基板として用いて、周囲にシール材として、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を適用し、これを上記陰極上に重ねて前記透明支持基板と密着させ、ガラス基板側からUV光を照射して、硬化させて、封止して、図3、図4に示すような照明装置を形成して評価した。
<< Evaluation of organic EL elements >>
When evaluating the obtained organic EL elements 2-1 to 2-6, the non-light-emitting surface of each organic EL element after production was covered with a glass case, and a glass substrate having a thickness of 300 μm was used as a sealing substrate. An epoxy-based photo-curing adhesive (Lux Track LC0629B manufactured by Toagosei Co., Ltd.) is applied as a sealing material in the periphery, and this is placed on the cathode to be in close contact with the transparent support substrate and irradiated with UV light from the glass substrate side. Then, it was cured and sealed, and an illumination device as shown in FIGS. 3 and 4 was formed and evaluated.
次いで、下記のようにして発光輝度及び発光効率を測定した。 Subsequently, the luminance and luminous efficiency were measured as follows.
(発光輝度、発光効率)
東洋テクニカ製ソースメジャーユニット2400型を用いて、直流電圧を有機EL素子に印加して発光させ、10Vの直流電圧を印加した時の発光輝度(cd/m2)と2.5mA/cm2の電流を通じた時の発光効率(lm/W)を測定した。得られた結果を表2に示す。有機EL素子2−1を100とする相対値で表した。
(Luminance, luminous efficiency)
Using Toyo Technica source measure unit type 2400, a direct current voltage is applied to the organic EL element to emit light, and a light emission luminance (cd / m 2 ) and 2.5 mA / cm 2 when a direct current voltage of 10 V is applied. Luminous efficiency (lm / W) when passing current was measured. The obtained results are shown in Table 2. It represents with the relative value which sets the organic EL element 2-1 to 100.
(発光寿命)
有機EL素子を室温下、2.5mA/cm2の定電流条件下による連続点灯を行い、初期輝度の半分の輝度になるのに要する時間(τ1/2)を測定した。発光寿命は有機EL素子2−1を100と設定する相対値で表した。
(Luminescent life)
The organic EL element was continuously lit at a constant current of 2.5 mA / cm 2 at room temperature, and the time (τ 1/2 ) required to achieve half the initial luminance was measured. The light emission lifetime is represented by a relative value at which the organic EL element 2-1 is set to 100.
表2から、本発明に係る金属錯体を用いて作製した有機EL素子は、比較例の有機EL素子に比べ、純青〜青緑色の短波な発光を持ちながら高い発光効率と高い輝度が達成できることが明らかである。 From Table 2, the organic EL element produced using the metal complex according to the present invention can achieve high luminous efficiency and high luminance while having short-wave emission of pure blue to blue green compared with the organic EL element of the comparative example. Is clear.
実施例3
《フルカラー表示装置の作製》
(青色発光素子の作製)
実施例1の有機EL素子1−3を青色発光素子として用いた。
Example 3
<Production of full-color display device>
(Production of blue light emitting element)
The organic EL element 1-3 of Example 1 was used as a blue light emitting element.
(緑色発光素子の作製)
実施例1の有機EL素子1−1において、Ir−12をIr−1に変更した以外は同様にして、緑色発光素子を作製し、これを緑色発光素子として用いた。
(Production of green light emitting element)
A green light emitting device was produced in the same manner as in the organic EL device 1-1 of Example 1 except that Ir-12 was changed to Ir-1, and this was used as a green light emitting device.
(赤色発光素子の作製)
実施例1の有機EL素子1−1において、Ir−12をIr−9に変更した以外は同様にして、赤色発光素子を作製し、これを赤色発光素子として用いた。
(Production of red light emitting element)
A red light emitting device was produced in the same manner as in the organic EL device 1-1 of Example 1 except that Ir-12 was changed to Ir-9, and this was used as a red light emitting device.
上記で作製した赤色、緑色、青色発光有機EL素子を同一基板上に並置し、図1に記載のような形態を有するアクティブマトリクス方式フルカラー表示装置を作製した。図2には、作製した前記表示装置の表示部Aの模式図のみを示した。即ち、同一基板上に複数の走査線5及びデータ線6を含む配線部と並置した複数の画素3(発光の色が赤領域の画素、緑領域の画素、青領域の画素等)とを有し、配線部の走査線5及び複数のデータ線6はそれぞれ導電材料からなり、走査線5とデータ線6は格子状に直交して、直交する位置で画素3に接続している(詳細は図示せず)。前記複数画素3は、それぞれの発光色に対応した有機EL素子、アクティブ素子であるスイッチングトランジスタと駆動トランジスタそれぞれが設けられたアクティブマトリクス方式で駆動されており、走査線5から走査信号が印加されるとデータ線6から画像データ信号を受け取り、受け取った画像データに応じて発光する。このように赤、緑、青の画素を適宜、並置することによって、フルカラー表示装置を作製した。
The red, green, and blue light-emitting organic EL elements produced above were juxtaposed on the same substrate to produce an active matrix type full-color display device having a configuration as shown in FIG. In FIG. 2, only the schematic diagram of the display part A of the produced display device is shown. That is, a plurality of pixels 3 (light emission color is a red region pixel, a green region pixel, a blue region pixel, etc.) juxtaposed with a wiring portion including a plurality of
このフルカラー表示装置は駆動することにより、輝度が高く、高耐久性を有し、かつ鮮明なフルカラー動画表示が得られることが分かった。 It has been found that when this full-color display device is driven, high brightness, high durability, and a clear full-color moving image display can be obtained.
実施例4
《白色発光素子及び白色照明装置の作製−1》
実施例1の透明電極基板の電極を20mm×20mmにパターニングし、その上に実施例1と同様に正孔注入/輸送層としてα−NPDを25nmの厚さで成膜し、さらにCBPの入った前記加熱ボートと例示化合物(1−7)の入ったボート及びIr−9の入ったボートをそれぞれ独立に通電して、発光ホストであるCBPと発光ドーパントである例示化合物(1−7)及びIr−9の蒸着速度が100:5:0.6になるように調節し、膜厚30nmの厚さになるように蒸着し、発光層を設けた。
Example 4
<< Preparation of White Light Emitting Element and White Lighting Device-1 >>
The electrode of the transparent electrode substrate of Example 1 is patterned to 20 mm × 20 mm, and α-NPD is formed as a hole injection / transport layer with a thickness of 25 nm thereon as in Example 1, and further contains CBP. The heated boat, the boat containing Exemplified Compound (1-7) and the boat containing Ir-9 were energized independently, and CBP as a luminescent host and Exemplified Compound (1-7) as a luminescent dopant and The vapor deposition rate of Ir-9 was adjusted to 100: 5: 0.6, vapor deposition was performed to a thickness of 30 nm, and a light emitting layer was provided.
次いで、BCPを10nm成膜して正孔阻止層を設けた。さらに、Alq3を40nmで成膜し電子輸送層を設けた。 Next, BCP was deposited to a thickness of 10 nm to provide a hole blocking layer. Further, Alq 3 was formed at 40 nm to provide an electron transport layer.
次に、実施例1と同様に電子注入層の上にステンレス鋼製の透明電極とほぼ同じ形状の正方形穴あきマスクを設置し、陰極バッファー層としてフッ化リチウム0.5nm及び陰極としてアルミニウム150nmを蒸着成膜した。 Next, as in Example 1, a square perforated mask having the same shape as the transparent electrode made of stainless steel was placed on the electron injection layer, and lithium fluoride 0.5 nm was used as the cathode buffer layer and aluminum 150 nm was used as the cathode. Evaporated film was formed.
この素子を実施例1と同様な方法及び同様な構造の封止缶を具備させ、図3、図4に示すような平面ランプを作製した。この平面ランプに通電したところほぼ白色の光が得られ、照明装置として使用できることが分かった。例示の他の化合物に置き換えても同様に白色の発光が得られることが分かった。 This element was provided with a sealing can having the same method and the same structure as in Example 1, and a flat lamp as shown in FIGS. 3 and 4 was produced. When this flat lamp was energized, almost white light was obtained, and it was found that it could be used as a lighting device. It turned out that white light emission is obtained similarly even if it replaces with the other compound of illustration.
実施例5
《白色発光素子及び白色照明装置の作製−2》
陽極として100mm×100mm×1.1mmのガラス基板上にITO(インジウムチンオキシド)を100nm製膜した基板(NHテクノグラス社製NA−45)にパターニングを行った後、このITO透明電極を設けた透明支持基板をイソプロピルアルコールで超音波洗浄し、乾燥窒素ガスで乾燥し、UVオゾン洗浄を5分間行った。
Example 5
<< Production of White Light Emitting Element and White Lighting Device-2 >>
After patterning on a substrate (NA-45 manufactured by NH Techno Glass Co., Ltd.) formed by depositing 100 nm of ITO (indium tin oxide) on a 100 mm × 100 mm × 1.1 mm glass substrate as an anode, this ITO transparent electrode was provided. The transparent support substrate was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.
この透明支持基板上に、ポリ(3,4−エチレンジオキシチオフェン)−ポリスチレンスルホネート(PEDOT/PSS、Bayer社製、Baytron P Al 4083)を純水で70%に希釈した溶液を3000rpm、30秒でスピンコート法により製膜した後、200℃にて1時間乾燥し、膜厚30nmの第1正孔輸送層を設けた。 On this transparent support substrate, a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water at 3000 rpm for 30 seconds. After the film formation by spin coating, the film was dried at 200 ° C. for 1 hour to provide a first hole transport layer having a thickness of 30 nm.
この基板を窒素雰囲気下に移し、第1正孔輸送層上に、50mgの化合物Aを10mlのトルエンに溶解した溶液を1000rpm、30秒の条件下、スピンコート法により製膜した。180秒間紫外光を照射し、光重合・架橋を行った後、60℃で1時間真空乾燥し第2正孔輸送層とした。 This substrate was transferred to a nitrogen atmosphere, and a solution of 50 mg of compound A dissolved in 10 ml of toluene was formed on the first hole transport layer by spin coating at 1000 rpm for 30 seconds. After irradiating with ultraviolet light for 180 seconds to carry out photopolymerization / crosslinking, vacuum drying was performed at 60 ° C. for 1 hour to form a second hole transport layer.
次に、化合物B(60mg)、化合物Ir−9(3.0mg)、例示化合物(1−6)(3.0mg)をトルエン6mlに溶解した溶液を用い、1000rpm、30秒の条件下、スピンコート法により製膜した。15秒間紫外光を照射し、光重合・架橋を行わせ、さらに真空中150℃で1時間加熱を行い、発光層とした。 Next, using a solution prepared by dissolving Compound B (60 mg), Compound Ir-9 (3.0 mg), and Exemplified Compound (1-6) (3.0 mg) in 6 ml of toluene, spin was performed at 1000 rpm for 30 seconds. A film was formed by a coating method. Irradiated with ultraviolet light for 15 seconds to cause photopolymerization / crosslinking, and further heated in vacuum at 150 ° C. for 1 hour to obtain a light emitting layer.
さらに、化合物C(20mg)をトルエン6mlに溶解した溶液を用い、1000rpm、30秒の条件下、スピンコート法により製膜した。15秒間紫外光を照射し、光重合・架橋を行わせ、さらに真空中80℃で1時間加熱を行い、正孔阻止層とした。 Furthermore, a film in which Compound C (20 mg) was dissolved in 6 ml of toluene was used to form a film by spin coating under conditions of 1000 rpm and 30 seconds. Ultraviolet light was irradiated for 15 seconds, photopolymerization / crosslinking was performed, and further heating was performed in vacuum at 80 ° C. for 1 hour to form a hole blocking layer.
続いて、この基板を真空蒸着装置の基板ホルダーに固定し、モリブデン製抵抗加熱ボートにAlq3を200mg入れ、真空蒸着装置に取り付けた。真空槽を4×10-4Paまで減圧した後、Alq3の入った前記加熱ボートに通電して加熱し、蒸着速度0.1nm/秒で前記電子輸送層の上に蒸着して、さらに膜厚40nmの電子輸送層を設けた。 Subsequently, this substrate was fixed to a substrate holder of a vacuum deposition apparatus, 200 mg of Alq 3 was placed in a molybdenum resistance heating boat, and attached to the vacuum deposition apparatus. After reducing the vacuum chamber to 4 × 10 −4 Pa, the heating boat containing Alq 3 is heated by heating, evaporated onto the electron transport layer at a deposition rate of 0.1 nm / second, and further coated with a film. An electron transport layer having a thickness of 40 nm was provided.
なお、蒸着時の基板温度は室温であった。 In addition, the substrate temperature at the time of vapor deposition was room temperature.
引き続き、フッ化リチウム0.5nm及びアルミニウム110nmを蒸着して陰極を形成し、白色発光有機EL素子を作製した。 Then, 0.5 nm of lithium fluoride and 110 nm of aluminum were vapor-deposited, the cathode was formed, and the white light emitting organic EL element was produced.
この素子に通電したところほぼ白色の光が得られ、照明装置として使用できることが分かった。 When this element was energized, almost white light was obtained, and it was found that it could be used as a lighting device.
1 ディスプレイ
3 画素
5 走査線
6 データ線
A 表示部
B 制御部
102 ガラスカバー
105 陰極
106 有機EL層
107 透明電極付きガラス基板
108 窒素ガス
109 捕水剤
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