JP5565819B2 - Semiconductor device substrate and semiconductor device - Google Patents
Semiconductor device substrate and semiconductor device Download PDFInfo
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- JP5565819B2 JP5565819B2 JP2012193947A JP2012193947A JP5565819B2 JP 5565819 B2 JP5565819 B2 JP 5565819B2 JP 2012193947 A JP2012193947 A JP 2012193947A JP 2012193947 A JP2012193947 A JP 2012193947A JP 5565819 B2 JP5565819 B2 JP 5565819B2
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- 239000004065 semiconductor Substances 0.000 title claims description 59
- 239000000758 substrate Substances 0.000 title claims description 20
- 238000007747 plating Methods 0.000 claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims description 22
- 229920005989 resin Polymers 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 description 18
- 206010040844 Skin exfoliation Diseases 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
本発明は、めっきによって半導体装置の端子部となる部分を形成する半導体装置用基板及びその基板を用いた半導体装置に関するものである。 The present invention relates to a semiconductor device substrate on which a portion to be a terminal portion of a semiconductor device is formed by plating, and a semiconductor device using the substrate.
半導体装置の小型・薄型化は年々進み、図７に示すような封止樹脂１０の裏面に、外部との接続部（端子部）１を有する半導体装置が増えてきた。このような半導体装置のパッド部２や端子部１は、銅系合金や鉄・ニッケル合金をエッチング加工やプレス加工により所定のパターンに形成したリードフレームを用いることが一般的だった。しかし、このリードフレームは、０．１２５〜０．２０ｍｍの板厚のものが主に使用され、半導体装置の薄型化を妨げる要因の一つとなっていた。
The size and thickness of semiconductor devices have been reduced year by year, and the number of semiconductor devices having an external connection portion (terminal portion) 1 on the back surface of the
近年、このリードフレームの代わりに、金属板に０．１ｍｍ以下の厚さでめっき層を形成した半導体装置用基板を用いて、パッド部や端子部をめっき層で形成した薄型の半導体装置が現れてきた。 In recent years, instead of this lead frame, a thin semiconductor device in which a pad portion and a terminal portion are formed of a plating layer using a substrate for a semiconductor device in which a plating layer is formed on a metal plate with a thickness of 0.1 mm or less has appeared. I came.
このめっき層によりパッド部や端子部を形成する半導体装置は、例えば、先ず図４（１）に示すように、金属板３上に複数の端子部１とパッド部２を含む所定パターンのめっき層を形成した半導体装置用基板を準備し、次に図４（２）に示すようにパッド部２上に半導体素子１２を搭載して、この半導体素子１２の電極と端子部１とをボンディングワイヤ１１により接続した後、これら全体を樹脂１０にて封止し、次に図４（３）に示すように、金属板３のみを除去することで封止樹脂１０の裏面にめっき層の端子部１を有する複数個の半導体装置を得、その後一単位毎に切断することにより得ることができる。
金属板を除去する方法としては、金属板のみを溶解する方法や機械的に引き剥がす方法などがある。
A semiconductor device in which a pad portion and a terminal portion are formed by this plating layer is, for example, a plating layer having a predetermined pattern including a plurality of
As a method of removing the metal plate, there are a method of melting only the metal plate, a method of mechanically peeling it off, and the like.
このように金属板を除去する方法を用いる半導体装置用基板は、金属板とめっき層が、半導体装置の組み立て工程中は剥がれることなく密着している必要がある。一方、金属板のみを除去する工程においては、めっき層が封止樹脂と密着するとともに金属板とめっき層の間が剥がれ易いという相反する機能が要求されている。 Thus, the board | substrate for semiconductor devices which uses the method of removing a metal plate needs to closely_contact | adhere without peeling a metal plate and a plating layer during the assembly process of a semiconductor device. On the other hand, in the process of removing only the metal plate, a contradictory function is required in which the plating layer is in close contact with the sealing resin and the metal plate and the plating layer are easily peeled off.
そして、特許文献１には図５に示すように、金属板３の表面にブラスト処理などによって凹凸を設け、且つ剥離性をもたせる酸化膜を形成する剥離処理を行った後に、めっき層１を形成する技術が示されている。しかし、この場合には、金属板の一面に凹凸を付ける表面処理工程と、剥離性をもたせる酸化膜形成工程が新たに必要となる。また、めっき層を形成する片面側に凹凸を設けることで、金属板に反りが発生する問題がある。
And in
また、特許文献２には図６に示すように、めっき層１に張り出し部を設けることで、めっき層と封止樹脂１０との密着性を向上させる技術が示されている。しかし、めっき層をオーバーハングさせて形成する場合、オーバーハング量をコントロールすることが難しく、形成するめっき層の全てが同じ庇長さにならない問題や、隣のめっき層と繋がってしまう問題がある。また、めっき層が薄くなると張り出し部の厚さも薄くなることから、密着性が低下する問題も抱えている。
本発明は、このような問題点を解決するためになされたものであり、その目的とするところは、めっき層を有する金属板を用いて樹脂封止後に金属板を除去するようにした半導体装置用基板及び半導体装置について、金属板の除去後にめっき層が封止樹脂と密着し、封止樹脂からめっき層が浮いた状態や剥離する事態が生じないようにした半導体装置用基板及び半導体装置を提供することである。 The present invention has been made to solve such problems, and an object of the present invention is to provide a semiconductor device in which a metal plate having a plating layer is used to remove the metal plate after resin sealing. A substrate for a semiconductor device and a semiconductor device in which the plating layer is in close contact with the sealing resin after the metal plate is removed so that the plating layer is not lifted or peeled off from the sealing resin. Is to provide.
上記の目的を達成するために、本発明の半導体装置用基板は、金属板上にパッド部や端子部となるめっき層が形成され半導体素子を搭載して樹脂封止体で封止した後めっき層を樹脂封止体に残して金属板だけが除去されることになる半導体装置用基板であって、前記端子部は、前記金属板上に金めっき、その上にニッケルめっき、その上に金めっきが施されためっき層を有し、０．０１〜０．１ｍｍの厚さで形成され、また前記端子部の輪郭形状は凹部を含む多角形状であり、前記端子部の輪郭形状は中心線に対して非線対称であり、隣の端子部との距離が一定となるように、前記各端子部の相隣接する屈曲形状同士は同じ向きに並んでいることを特徴とする。 In order to achieve the above object, the substrate for a semiconductor device of the present invention is plated after a plating layer to be a pad portion or a terminal portion is formed on a metal plate, and a semiconductor element is mounted and sealed with a resin sealing body. A substrate for a semiconductor device in which only a metal plate is removed leaving a layer in a resin encapsulant, wherein the terminal portion is gold-plated on the metal plate , nickel-plated thereon, and gold on it plating has a plating layer applied, is formed with a thickness of 0.01 to 0.1 mm, also the contour shape of the terminal portion Ri polygonal der including a recess, the contour shape of the terminal portion center The adjacent bent portions of the respective terminal portions are arranged in the same direction so as to be non-axisymmetric with respect to the line and have a constant distance from the adjacent terminal portion .
また、本発明の半導体装置は、厚さが０．０１〜０．１ｍｍのめっきにより形成された端子部を有する半導体装置において、前記端子部は最下層から順に金めっき層、ニッケルめっき層、金めっき層が形成され、また前記端子部の輪郭形状は中心線に対して非線対称であって凹部を含む多角形状であり、隣の端子部との距離が一定となるように、前記各端子部の相隣接する屈曲形状同士は同じ向きに並んでいることを特徴とする。 Further, the semiconductor device of the present invention is a semiconductor device having a terminal portion formed by plating having a thickness of 0.01 to 0.1 mm. The terminal portion is a gold plating layer, a nickel plating layer, a gold plating in order from the lowest layer. Each terminal is formed such that a plating layer is formed, and the contour shape of the terminal portion is axisymmetric with respect to the center line and is a polygonal shape including a concave portion, and the distance from the adjacent terminal portion is constant. The bent shapes adjacent to each other are arranged in the same direction .
金属板上に形成する端子部は、金属板上に最初に金めっき層が形成され、その上に最上層が貴金属めっき層である複数層のめっき層を有し、０．０１〜０．１ｍｍの厚さで形成され、また端子部の輪郭形状は凹部を含む多角形状であるため、半導体装置として組みたてた時に、このような構成のめっき層としたことにより端子部と封止樹脂との密着力が増加し、結果として端子部と封止樹脂との間で、剥離やクラックが極めて発生しづらい半導体装置を得ることが可能となる。さらに、端子部の輪郭形状を中心線に対して非線対称であり、隣の端子部との距離が一定となるように、各端子部は相隣接する屈曲形状同士が同じ向きに並んでいるため、形成されるめっき層の側面積が増加するとともに、相隣接する端子部の間隔が一定となるため端子部と封止樹脂との密着力が一定となり、より一層剥離やクラックが極めて発生しづらい半導体装置を得ることが可能となる。 The terminal part to be formed on the metal plate has a plurality of plating layers in which a gold plating layer is first formed on the metal plate and the uppermost layer is a noble metal plating layer on the metal plate. In addition, since the contour shape of the terminal portion is a polygonal shape including a concave portion, the terminal portion and the sealing resin are formed by forming a plating layer having such a configuration when assembled as a semiconductor device. As a result, it becomes possible to obtain a semiconductor device in which peeling or cracking is hardly generated between the terminal portion and the sealing resin. Furthermore, the contour shapes of the terminal portions are axisymmetric with respect to the center line, and the adjacent bent shapes are arranged in the same direction in each terminal portion so that the distance from the adjacent terminal portion is constant. Therefore, the side area of the plating layer to be formed is increased and the distance between the adjacent terminal parts is constant, so that the adhesion between the terminal part and the sealing resin is constant, and further peeling and cracking are extremely generated. A hard semiconductor device can be obtained.
本発明の実施の形態を、図１及び図２に基づいて説明する。
金属板３に脱脂処理と酸洗浄を行った後、レジストを両面に貼り付けた所定のパターンが描かれたガラスマスクを用いて露光を行い、現像することで、金属板上にめっき層を形成するためのめっきエリア部を作製する。この時、半導体装置の端子部１となるめっき層を形成するめっきエリア部は、輪郭形状を凹部を含む多角形状として形成し、周長を矩形時の周長より１５％以上長くなるようにする。
An embodiment of the present invention will be described with reference to FIGS.
After performing degreasing treatment and acid cleaning on the
つまり、端子部１の形状は、例えば図１の（１）〜（７）に示すように、輪郭形状を、凹部を含む多角形状とする。より具体的に説明すると、図１の（１）のように矩形形状の左右の辺を中央部で折り曲げた多角形状としたり、（２）のように折り曲げる点をずらした多角形状としたり、（３）のようにくの字をした多角形状としたり、（４）のように一辺に複数の凹部をもつ多角形状にしたり、（５）のように４辺全てに凹部をもつ多角形状にしたり、あるいは（６）に示すようにＳ字をした多角形状にするなど、さまざまな多角形状に設定することができる。
That is, as for the shape of the
通常、端子部１は図７（２）に示すように矩形形状で、所定のピッチで並んだパターンであることから、凸部のみの多角形状では隣の端子部との距離が狭くなってしまう。そこで、隣の端子部との距離を一定量確保するためには、図３（２）に示すように端子部１は凹部を含む多角形状とし、また端子部の輪郭形状は中心線に対して非線対称であり、隣の端子部との距離が一定となるように、各端子部の相隣接する屈曲形状同士は同じ向きに並んでいるようにすることで、相隣接する端子部は一定の距離を確保することが可能となる。
Normally, the
そして、金属板上にめっき層を形成するためのめっきエリア部が形成された材料を用いて、めっき前処理を行った後に、めっき層を必要な高さに形成し、レジストを剥離し、後処理を行うことで半導体装置用基板を得ることができる。 And after performing the plating pretreatment using the material in which the plating area part for forming the plating layer on the metal plate is formed, the plating layer is formed at a required height, the resist is peeled off, By performing the treatment, a semiconductor device substrate can be obtained.
この半導体装置用基板を用いて、図３に示すように半導体素子の搭載、ワイヤボンディング及び樹脂封止などを行い、樹脂硬化後に金属板をエッチングして除去することで、複数個の半導体装置が一体に樹脂封止された状態の半導体装置が得られる。
その後、ブレードによりダイシングを行って半導体装置を個片化する。
Using this semiconductor device substrate, mounting of semiconductor elements, wire bonding, resin sealing, etc. are performed as shown in FIG. 3, and the metal plate is etched and removed after the resin is cured. A semiconductor device in a state of being integrally resin-sealed is obtained.
Thereafter, dicing is performed with a blade to separate the semiconductor device.
次に、本発明の半導体装置用基板の製造方法及び半導体装置の製造方法を図４を参照しながら具体的に説明する。
金属板３として板厚０．２ｍｍの銅合金を用い、幅１００ｍｍの板状にして、脱脂処理と酸洗浄を行った。次に、厚み０．０２５ｍｍの感光性ドライフィルムレジストをラミネートロールで前記材料の両面に貼り付けた。次に、後でめっき層を形成するめっきエリア部分を黒く、それ以外を透明にしたガラスマスクをドライフィルムレジストの上から被せて、さらにその上から紫外光を照射して露光を行い、ドライフィルムレジストに所定のパターンを作製した。
Next, a method for manufacturing a substrate for a semiconductor device and a method for manufacturing a semiconductor device according to the present invention will be specifically described with reference to FIG.
A copper alloy having a thickness of 0.2 mm was used as the
次に炭酸ナトリウム溶液を用いて、紫外光の照射が遮られて感光しなかった未硬化のドライフィルムレジストを溶かす現像処理を行って、めっきを施すための材料を完成させた。この材料を用いて、脱脂、酸洗浄後に、金めっきを約０．１μｍ，その上に一般的なスルファミン酸ニッケルめっきを１０μｍ、その上に金めっきを３μｍ施して、最後に水酸化ナトリウム溶液でドライフィルムレジストを剥離し、水洗と乾燥を行った後に１００ｍｍ×２００ｍｍの大きさに切断して、図４（１）に示す本発明の半導体装置用基板を得た。 Next, using a sodium carbonate solution, a development process was performed to dissolve uncured dry film resist that was not exposed due to the irradiation of ultraviolet light, thereby completing a material for plating. Using this material, after degreasing and acid cleaning, gold plating is about 0.1 μm, general nickel sulfamate plating is 10 μm, and gold plating is 3 μm thereon, and finally with sodium hydroxide solution The dry film resist was peeled off, washed with water and dried, and then cut into a size of 100 mm × 200 mm to obtain the substrate for a semiconductor device of the present invention shown in FIG.
そしてこの半導体装置用基板を用いて、図４（２）に示すように半導体素子１２を搭載し、ワイヤボンディング及び樹脂封止を行い、封止樹脂１０硬化後に図４（３）に示すように金属板３である素材の銅合金をアルカリエッチャントでエッチングした。
Then, using this semiconductor device substrate, the
なお、このときの端子部となるめっきエリアのパターンは比較のために、次の５種類を作製した。
（Ａ）従来例として、パッド部は矩形形状で３ｍｍ角とし、その周囲に図１（８）に示す矩形形状で０．３ｍｍ角の端子部を２８個配置したもの。
（Ｂ）パッド部は矩形形状で３ｍｍ角とし、本発明の構造である図１（７）に示す端子部の周長が矩形より約１０％長い（ｄ＝０．０５ｍｍの凹）もの。
（Ｃ）パッド部は矩形形状で３ｍｍ角とし、本発明の構造である図１（７）に示す端子部の周長が矩形より約１３％長い（ｄ＝０．０５８ｍｍの凹）もの。
（Ｄ）パッド部は矩形形状で３ｍｍ角とし、本発明の構造である図１（７）に示す端子部の周長が矩形より約１７％長い（ｄ＝０．０６６ｍｍの凹）もの。
（Ｅ）パッド部は矩形形状で３ｍｍ角とし、本発明の構造である図１（７）に示す端子部の周長が矩形より約２１％長い（ｄ＝０．０７５ｍｍの凹）もの。
そして図２に示すように、幅１００ｍｍの素材のうち中央５０ｍｍの付近にパッド部２と端子部１の組が１６組マトリックス状に並ぶようにして、そのマトリックス状を複数組作製した。
In addition, the following five types of patterns of the plating area used as the terminal part at this time were produced for comparison.
(A) As a conventional example, the pad portion has a rectangular shape of 3 mm square, and 28 rectangular terminal portions having a rectangular shape shown in FIG.
(B) The pad portion has a rectangular shape of 3 mm square, and the peripheral length of the terminal portion shown in FIG. 1 (7), which is the structure of the present invention, is approximately 10% longer than the rectangle (d = 0.05 mm concave).
(C) The pad portion has a rectangular shape of 3 mm square, and the peripheral length of the terminal portion shown in FIG. 1 (7), which is the structure of the present invention, is approximately 13% longer than the rectangle (d = 0.058 mm concave).
(D) The pad portion has a rectangular shape of 3 mm square, and the peripheral length of the terminal portion shown in FIG. 1 (7), which is the structure of the present invention, is about 17% longer than the rectangle (d = 0.066 mm recess).
(E) The pad portion has a rectangular shape of 3 mm square, and the peripheral length of the terminal portion shown in FIG. 1 (7), which is the structure of the present invention, is about 21% longer than the rectangle (d = 0.075 mm concave).
Then, as shown in FIG. 2, a plurality of sets of matrix shapes were produced so that 16 sets of
エッチング後、樹脂封止された複数の半導体装置をブレードによりダイシングを行って個片化した。６０％ＲＨにて１９２時間エージング後に２４０℃のリフローを行い、超音波探傷及び断面加工にて封止樹脂内の端子部の剥離やクラックを観察した。 After etching, a plurality of resin-sealed semiconductor devices were diced with a blade and separated into individual pieces. After aging at 60% RH for 192 hours, 240 ° C. reflow was performed, and peeling and cracking of the terminal portion in the sealing resin were observed by ultrasonic flaw detection and cross-section processing.
その結果、（Ａ）の従来の形状の半導体装置では、端子部３０個のうち５個でめっき層周縁の側面にて封止樹脂との剥離が発生していた。（Ｂ）では、端子部３０個のうち２個に同様の剥離が発生していた。また（Ｃ）では、端子部３０個のうち１個に同様の剥離が発生していた。一方、（Ｄ）および（Ｅ）の形状では、それぞれ３０個の端子部に剥離の発生が無かった。 As a result, in the semiconductor device having the conventional shape of (A), peeling from the sealing resin occurred on the side surface of the periphery of the plating layer in 5 of the 30 terminal portions. In (B), the same peeling occurred in two of the 30 terminal portions. In (C), the same peeling occurred in one of the 30 terminal portions. On the other hand, in the shapes of (D) and (E), there was no occurrence of peeling at 30 terminal portions.
本発明の凹部を含む多角形状のめっき層、周長が矩形時の周長より１５％以上長くなるめっき層は、めっき層の側面に対する技術であることから、従来技術の金属板の一面に凹凸を付ける表面処理工程と剥離性をもたせる剥離処理工程を追加することや、めっき層をオーバーハングさせて形成することは、めっき層の上面、下面に対する技術であるから、併用することも可能である。 The plating layer having a polygonal shape including the concave portion of the present invention, and the plating layer whose peripheral length is 15% or more longer than the peripheral length at the time of the rectangle is a technique for the side surface of the plating layer. It is possible to use both the surface treatment process and the peeling treatment process to give the releasability, and the formation of the plating layer by overhanging it because it is a technique for the upper and lower surfaces of the plating layer. .
１ 端子部
２ パッド部
３ 金属板
４ レジスト
１０ 封止樹脂
１１ ボンディングワイヤ
１２ 半導体素子
DESCRIPTION OF
Claims (2)
前記端子部は、前記金属板上に金めっき、その上にニッケルめっき、その上に金めっきが施されためっき層を有し、０．０１〜０．１ｍｍの厚さで形成され、また前記端子部の輪郭形状は凹部を含む多角形状であり、
前記端子部の輪郭形状は中心線に対して非線対称であり、隣の端子部との距離が一定となるように、前記各端子部の相隣接する屈曲形状同士は同じ向きに並んでいることを特徴とする半導体装置用基板。 A plating layer to be a pad portion or a terminal portion is formed on a metal plate, a semiconductor element is mounted, and after sealing with a resin sealing body, only the metal plate is removed leaving the plating layer on the resin sealing body. A semiconductor device substrate comprising:
The terminal portion has a plating layer having gold plating on the metal plate , nickel plating thereon, and gold plating thereon, and is formed with a thickness of 0.01 to 0.1 mm. contour shape of the terminal portion is Ri polygonal der including the concave portion,
The contour shapes of the terminal portions are axisymmetric with respect to the center line, and the adjacent bent shapes of the terminal portions are arranged in the same direction so that the distance from the adjacent terminal portion is constant. A substrate for a semiconductor device.
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