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JP2012182210A - Method for manufacturing lead frame substrate for led element - Google Patents

Method for manufacturing lead frame substrate for led element Download PDF

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Publication number
JP2012182210A
JP2012182210A JP2011042576A JP2011042576A JP2012182210A JP 2012182210 A JP2012182210 A JP 2012182210A JP 2011042576 A JP2011042576 A JP 2011042576A JP 2011042576 A JP2011042576 A JP 2011042576A JP 2012182210 A JP2012182210 A JP 2012182210A
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Japan
Prior art keywords
resin
connection area
led element
forming
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2011042576A
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Japanese (ja)
Inventor
Junko Toda
順子 戸田
Takayuki Fukada
隆之 深田
Shuji Goto
秀二 後藤
Osamu Yoshioka
修 吉岡
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Toppan Inc
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Toppan Printing Co Ltd
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Priority to JP2011042576A priority Critical patent/JP2012182210A/en
Publication of JP2012182210A publication Critical patent/JP2012182210A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Lead Frames For Integrated Circuits (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a lead frame substrate for an LED element capable of suppressing an adverse effect of resin burrs in a pad part and an electrical connection area.SOLUTION: A method for manufacturing a lead frame substrate 1 for an LED element comprising a frame part 10 having a pad part 11 on which the LED element is mounted and a connection area 12 electrically connected to the LED element mounted on the pad part via wire; and a resin part having a reflector part surrounding the pad part and the connection area in plan view and attached to the frame part; comprises an etching step for forming the frame part by forming the pad part and the connection area on a metal plate 30; a plating treatment step for forming a plating layer on the pad part and the connection area after the etching step; a resin part forming step for forming a resin part on the frame part after the plating treatment step; and a resin removing step for removing the resin existing on the pad part and the connection area after the resin part forming step.

Description

本発明は、ＬＥＤ（Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ、発光ダイオード）素子を担持、搭載するＬＥＤ素子用リードフレーム基板の製造方法に関する。   The present invention relates to a method of manufacturing a lead frame substrate for an LED element that carries and mounts an LED (Light Emitting Diode) element.

従来、金属製リードフレームと絶縁樹脂の複合体からなるＬＥＤ素子用リードフレーム基板が知られている（例えば、特許文献１参照。）。
このようなＬＥＤ素子用リードフレーム基板（以下、単に「リードフレーム基板」と称する。）は、ＬＥＤチップを搭載するための一つ乃至複数のパッド部と、ＬＥＤチップと電気的接続を行うための電気的接合エリアを同一平面に備え、パッド部と電気的接合エリア間、およびそれらとリードフレーム外周部の間に存在する空隙が絶縁性のモールド樹脂によって埋められて形成されている。モールド樹脂の成形にはトランスファーモールドが用いられることが多い。 Conventionally, a lead frame substrate for an LED element made of a composite of a metal lead frame and an insulating resin is known (for example, see Patent Document 1).
Such an LED element lead frame substrate (hereinafter simply referred to as a “lead frame substrate”) includes one or more pad portions for mounting the LED chip and an electrical connection with the LED chip. Electrical joint areas are provided on the same plane, and gaps existing between the pad portions and the electrical joint areas and between them and the outer periphery of the lead frame are filled with an insulating mold resin. A transfer mold is often used for molding the mold resin.

特開２００４−１７２１６０号公報JP 2004-172160 A

しかしながら、トランスファーモールドでは液状の樹脂が高圧で充填されるため、上述のパッド部や電気的接合エリアの表面には、樹脂バリや樹脂汚染（以下、「樹脂バリ等」と称する。）が生じることが多い。樹脂バリ等は、絶縁樹脂充填前にパッド部や電気的接合エリアに施されたメッキの光沢度にむらを生じさせ、ＬＥＤと電気的接合エリアとを電気的に接続するワイヤーボンディングの信頼性にも悪影響を及ぼすという問題がある。   However, since transfer resin is filled with a liquid resin at a high pressure, resin burrs or resin contamination (hereinafter referred to as “resin burrs” or the like) occurs on the surface of the pad portion or the electrical bonding area. There are many. Resin burrs, etc. cause unevenness in the gloss of the plating applied to the pad and the electrical joint area before filling with the insulating resin, thereby improving the reliability of wire bonding that electrically connects the LED and the electrical joint area. Has the problem of adverse effects.

本発明は、上記事情に鑑みてなされたものであり、パッド部や電気的接合エリアに対する樹脂バリ等の悪影響を抑制してＬＥＤ素子用リードフレーム基板を製造することができるＬＥＤ素子用リードフレーム基板の製造方法を提供することを目的とする。   The present invention has been made in view of the above circumstances, and can be used to manufacture a lead frame substrate for an LED element while suppressing adverse effects such as resin burrs on the pad portion and the electrical bonding area. It aims at providing the manufacturing method of.

本発明は、ＬＥＤ素子が搭載されるパッド部と、ワイヤーを介して前記パッド部に搭載された前記ＬＥＤ素子と電気的に接続される接続エリアとを有するフレーム部と、平面視において前記パッド部および前記接続エリアを囲むリフレクター部を有し、前記フレーム部に取り付けられた樹脂部とを備えたＬＥＤ素子用リードフレーム基板の製造方法であって、金属板に前記パッド部および前記接続エリアを形成して前記フレーム部を形成するエッチング工程と、前記エッチング工程後に、前記パッド部および前記接続エリアにメッキ層を形成するメッキ処理工程と、前記メッキ処理工程後に、前記フレーム部に対して前記樹脂部を成形する樹脂部形成工程と、前記樹脂部形成工程後に、前記パッド部および前記接続エリア上に存在する樹脂を除去する樹脂除去工程とを備えることを特徴とする。   The present invention includes a frame portion having a pad portion on which an LED element is mounted, a connection area electrically connected to the LED element mounted on the pad portion via a wire, and the pad portion in plan view. And a lead frame substrate for an LED element having a reflector portion surrounding the connection area and a resin portion attached to the frame portion, wherein the pad portion and the connection area are formed on a metal plate An etching process for forming the frame part, a plating process for forming a plating layer on the pad part and the connection area after the etching process, and the resin part with respect to the frame part after the plating process After the resin part forming step and the resin part forming step, the resin existing on the pad part and the connection area is formed. Characterized in that it comprises a resin removing step removed by.

前記樹脂除去工程では、前記フレーム部において前記パッド部および前記接続エリアが形成された面と反対側の面上においても樹脂が除去されてもよい。
また、前記樹脂除去工程は、電界研磨処理、プラズマ処理、およびアルゴンエッチング処理のいずれかを含んで行われてもよい。 In the resin removing step, the resin may be removed on the surface of the frame portion opposite to the surface on which the pad portion and the connection area are formed.
Further, the resin removing step may be performed including any one of an electropolishing process, a plasma process, and an argon etching process.

本発明のＬＥＤ素子用リードフレーム基板の製造方法によれば、パッド部や電気的接合エリアの樹脂バリ等の悪影響を抑制することができる。   According to the method for manufacturing a lead frame substrate for an LED element of the present invention, it is possible to suppress adverse effects such as resin burrs in a pad portion and an electrical bonding area.

本発明の一実施形態におけるＬＥＤ素子用リードフレーム基板を示す平面図である。It is a top view which shows the lead frame board | substrate for LED elements in one Embodiment of this invention. 図１のＡ−Ａ線における断面図である。It is sectional drawing in the AA of FIG. 図１のＢ―Ｂ線における断面図である。It is sectional drawing in the BB line of FIG. （ａ）から（ｉ）は、同ＬＥＤ素子用リードフレーム基板の製造手順を示す図である。(A)-(i) is a figure which shows the manufacture procedure of the lead frame board | substrate for the LED elements.

本発明の一実施形態について、図１から図４（ｉ）を参照して説明する。
図１は、本実施形態のリードフレーム基板１にＬＥＤチップ（ＬＥＤ発光素子）１００が実装されたＬＥＤパッケージ１１０を示す平面図であり、図２は、図１のＡ−Ａ線における断面図である。リードフレーム基板１は、図１および図２に示すように、金属製のフレーム部１０と、フレーム部１０に取り付けられた樹脂部２０とを備えている。 An embodiment of the present invention will be described with reference to FIGS. 1 to 4 (i).
FIG. 1 is a plan view showing an LED package 110 in which an LED chip (LED light emitting element) 100 is mounted on the lead frame substrate 1 of the present embodiment, and FIG. 2 is a cross-sectional view taken along line AA of FIG. is there. As shown in FIGS. 1 and 2, the lead frame substrate 1 includes a metal frame portion 10 and a resin portion 20 attached to the frame portion 10.

フレーム部１０は、金属合金製の板状の材料をエッチング加工することにより形成されており、ＬＥＤチップ１００が搭載されるパッド部１１と、平面視においてパッド部１１を挟んで対向する接続エリア１２とを備えている。   The frame portion 10 is formed by etching a metal alloy plate-like material, and is connected to a pad portion 11 on which the LED chip 100 is mounted and a connection area 12 that faces the pad portion 11 in plan view. And.

図３は、図１のＢ−Ｂ線における断面図である。図２および図３に示すように、パッド部１１および接続エリア１２はフレーム部１０の厚さ方向の一方の面（上面）に形成されており、反対側の下面には、パッド部１１および接続エリア１２と接続された放熱部１３Ａおよび１３Ｂがそれぞれ形成されている。放熱部１３Ａおよび１３Ｂの下面上における面積は、それぞれパッド部１１および接続エリア１２の上面における面積よりも大きく形成されており、ＬＥＤチップ１００から発生する駆動熱やＬＥＤチップ１００の周辺環境条件による熱を外部に拡散させ、ＬＥＤチップ１００に熱が蓄積されることを抑制している。   3 is a cross-sectional view taken along line BB in FIG. As shown in FIGS. 2 and 3, the pad portion 11 and the connection area 12 are formed on one surface (upper surface) in the thickness direction of the frame portion 10, and the pad portion 11 and the connection area are formed on the lower surface on the opposite side. Heat dissipation portions 13A and 13B connected to the area 12 are formed. The areas on the lower surfaces of the heat dissipating parts 13A and 13B are formed larger than the areas on the upper surfaces of the pad part 11 and the connection area 12, respectively, and drive heat generated from the LED chip 100 and heat due to ambient environmental conditions of the LED chip 100. Is diffused to the outside to prevent heat from being accumulated in the LED chip 100.

樹脂部２０は、エッチングにより形成されたフレーム部１０の隙間を埋める充填部２１と、フレーム部１０の上面に形成されるリフレクター部２２とを備えている。
充填部２１は、パッド部１１および接続エリア１２と、放熱部１３Ａおよび１３Ｂとを露出させるように形成されている。リフレクター部２２は、図１に示すように、リードフレーム基板１の平面視においてパッド部１１および接続エリア１２を囲むように形成されており、図２に示すように、リフレクター部２２に囲まれた領域が、ＬＥＤチップ１００が実装されるキャビティＣとなっている。リフレクター部２２のうちキャビティＣを規定する内面２２Ａは、上端から下端に向かうに従いキャビティＣの面方向（フレーム部１０の上面と平行な方向）における断面積が小さくなるようにテーパー状に形成されている。 The resin portion 20 includes a filling portion 21 that fills a gap between the frame portions 10 formed by etching, and a reflector portion 22 that is formed on the upper surface of the frame portion 10.
The filling portion 21 is formed so as to expose the pad portion 11 and the connection area 12 and the heat radiation portions 13A and 13B. As shown in FIG. 1, the reflector portion 22 is formed so as to surround the pad portion 11 and the connection area 12 in a plan view of the lead frame substrate 1, and is surrounded by the reflector portion 22 as shown in FIG. 2. The region is a cavity C in which the LED chip 100 is mounted. The inner surface 22A that defines the cavity C in the reflector portion 22 is formed in a tapered shape so that the cross-sectional area in the surface direction of the cavity C (direction parallel to the upper surface of the frame portion 10) decreases from the upper end toward the lower end. Yes.

パッド部１１および接続エリア１２の上面を含むフレーム部１０の外面全体には、メッキ層１４が形成され、ＬＥＤチップ１００実装時および外部基板接続時の電気的接続の信頼性が高められている。ＬＥＤチップ１００は、パッド部１１の上面に固着して搭載され、各接続エリア１２の上面とＬＥＤチップの図示しない端子とが金線等のワイヤー１０１を用いたワイヤーボンディングにより電気的に接続されてリードフレーム基板１に実装されている。
実装されたＬＥＤチップ１００および各ワイヤー１０１は、キャビティＣ内に充填された透明な封止樹脂１０２により封止されている。こうして、リードフレーム基板１を用いたＬＥＤパッケージ１１０が形成されている。 A plating layer 14 is formed on the entire outer surface of the frame portion 10 including the upper surfaces of the pad portion 11 and the connection area 12, and the reliability of electrical connection when the LED chip 100 is mounted and when an external substrate is connected is improved. The LED chip 100 is fixedly mounted on the upper surface of the pad portion 11, and the upper surface of each connection area 12 and a terminal (not shown) of the LED chip are electrically connected by wire bonding using a wire 101 such as a gold wire. Mounted on the lead frame substrate 1.
The mounted LED chip 100 and each wire 101 are sealed with a transparent sealing resin 102 filled in the cavity C. Thus, the LED package 110 using the lead frame substrate 1 is formed.

次に、本実施形態におけるリードフレーム基板１の製造方法について説明する。
まず、図４（ａ）に示すように、フレーム部となる金属板３０の上面３０Ａおよび下面３０Ｂにレジスト層３１を積層する。レジスト層３１の積層は、感光性レジストを塗布する、ドライフィルムレジストを貼付する等の方法により行うことができる。 Next, a method for manufacturing the lead frame substrate 1 in the present embodiment will be described.
First, as shown to Fig.4 (a), the resist layer 31 is laminated | stacked on the upper surface 30A and the lower surface 30B of the metal plate 30 used as a flame | frame part. The lamination of the resist layer 31 can be performed by a method such as applying a photosensitive resist or attaching a dry film resist.

次に、所定のパターンを有するフォトマスク(不図示)を用いてレジスト層３１に対して露光、現像処理等を行い、図４（ｂ）に示すように、金属板３０の上面３０Ａおよび下面３０Ｂにレジストパターン３２を形成する（レジストパターン形成工程）。フォトマスクのパターンは、上面側においては、パッド部１１および接続エリア１２の位置および形状に対応し、下面側においては、放熱部１３Ａおよび１３Ｂの位置および形状に対応している。   Next, the resist layer 31 is exposed and developed using a photomask (not shown) having a predetermined pattern, and as shown in FIG. 4B, the upper surface 30A and the lower surface 30B of the metal plate 30. A resist pattern 32 is formed on the substrate (resist pattern forming step). The pattern of the photomask corresponds to the position and shape of the pad portion 11 and the connection area 12 on the upper surface side, and corresponds to the position and shape of the heat radiation portions 13A and 13B on the lower surface side.

次に、図４（ｃ）に示すように、金属板３０の上面３０Ａおよび下面３０Ｂ側から塩化第二鉄等のエッチャントを用いてエッチング加工する（エッチング工程）。これにより、レジストパターン３２の存在しない部位が金属板３０の厚さ方向にエッチングされる。図４（ｄ）に示すように、レジストパターン３２を除去すると、パッド部１１および接続エリア１２と、放熱部１３Ａおよび１３Ｂとを有するフレーム部１０のおおよその形状が完成する。   Next, as shown in FIG.4 (c), it etches using etchants, such as ferric chloride, from the upper surface 30A side and the lower surface 30B side of the metal plate 30 (etching process). Thereby, a portion where the resist pattern 32 does not exist is etched in the thickness direction of the metal plate 30. As shown in FIG. 4D, when the resist pattern 32 is removed, the approximate shape of the frame portion 10 having the pad portion 11 and the connection area 12 and the heat radiation portions 13A and 13B is completed.

次に、フレーム部１０をメッキ浴につける等によりメッキ処理を行い、メッキ層１４を形成する。（メッキ処理工程）。メッキの種類としては、銀メッキ、金メッキ、パラジウムメッキなどを用いることができる。また、これらのメッキ処理を施す前に、耐熱拡散性が優れたニッケルメッキなどの下地メッキを施してもよい。
本実施形態では、図４（ｅ）に示すように、フレーム部１０の外面全体にメッキ層１４が形成されているが、メッキ処理工程は、例えばパッド部１１および接続エリア１２の上面のみに局所的に行われてもよい。 Next, a plating process is performed by attaching the frame portion 10 to a plating bath or the like to form a plating layer 14. (Plating process). As the type of plating, silver plating, gold plating, palladium plating, or the like can be used. Moreover, before performing these plating processes, you may perform base plating, such as nickel plating excellent in heat-resistant diffusivity.
In the present embodiment, as shown in FIG. 4E, the plating layer 14 is formed on the entire outer surface of the frame portion 10. However, the plating process is performed only on the upper surfaces of the pad portion 11 and the connection area 12, for example. May be performed automatically.

続く樹脂部形成工程では、図示しない上型と下型とでフレーム部１０を厚さ方向に挟み、公知のトランスファーモールドによって樹脂材料を充填し、充填部２１およびリフレクター部２２を有する樹脂部２０を形成する。   In the subsequent resin part forming step, the frame part 10 is sandwiched in the thickness direction between an upper mold and a lower mold (not shown), the resin material is filled by a known transfer mold, and the resin part 20 having the filling part 21 and the reflector part 22 is formed. Form.

図４（ｆ）は、樹脂部形成工程後のフレーム部１０を示す図である。図４（ｆ）に示すように、パッド部１１、接続エリア１２、および放熱部１３Ａ、１３Ｂの面上には、上型または下型とフレーム部１０との間の微小な隙間に樹脂材料が進入することにより形成された樹脂バリ２３等の余分な樹脂が存在している。   FIG. 4F is a diagram illustrating the frame portion 10 after the resin portion forming step. As shown in FIG. 4 (f), a resin material is placed in a minute gap between the upper die or the lower die and the frame portion 10 on the surface of the pad portion 11, the connection area 12, and the heat radiating portions 13A and 13B. Excess resin such as the resin burr 23 formed by entering there exists.

次に、図４（ｇ）に示すように、パッド部１１、接続エリア１２、および放熱部１３Ａ、１３Ｂに対してバリ取り処理を行い、上述の余分な樹脂を各部位の面上から除去する（樹脂除去工程）。バリ取り処理の具体的方法は、フレーム部１０の材質や、樹脂部２０を形成する樹脂材料の組成等により公知の方法を適宜選択できるが、中でも電界研磨処理、プラズマ処理、およびアルゴンエッチング処理等を１種類または２種類以上組み合わせて好適に用いることができる。バリ取り処理により、パッド部１１、接続エリア１２等を覆うメッキ層１４も一定程度あらされる（粗化される）が、上述した処理は、当該メッキ層１４の表面を過度にあらすことなく樹脂バリ２３等を除去することができるため、好ましい。
なお、本実施形態における樹脂除去工程は、液組成；リン酸 ７００ｍｌ、水 ３５０ｍｌ、電圧；１．５〜２Ｖ、電流；６〜８Ａ／ｄｍ２、温度；２０℃、時間；１５〜３０分の条件で電界研磨を行い、その後、電界研磨で取りきれなかった樹脂を、イオン銃条件；４ｋＶ、スパッタレート；１８．５３ｎｍ／ｍｉｎ、ターゲット電流；４．１μＡ、圧力；７．４ｍＰａの条件でのアルゴンエッチングにより除去するというものである。
樹脂除去工程が終わると、リードフレーム基板１が完成する。 Next, as shown in FIG. 4G, the pad part 11, the connection area 12, and the heat radiation parts 13A and 13B are deburred to remove the above-mentioned excess resin from the surface of each part. (Resin removal step). As a specific method of the deburring process, a known method can be appropriately selected depending on the material of the frame portion 10 and the composition of the resin material forming the resin portion 20. Can be suitably used singly or in combination of two or more. By the deburring process, the plating layer 14 covering the pad portion 11, the connection area 12 and the like is also formed to a certain degree (roughened). However, the above-described process is not performed excessively on the surface of the plating layer 14. The burr 23 and the like can be removed, which is preferable.
In addition, the resin removal process in this embodiment is a liquid composition; 700 ml of phosphoric acid, 350 ml of water, voltage; 1.5-2V, an electric current; 6-8 A / dm < 2 >, temperature; 20 degreeC, time; 15-30 minutes Electropolishing was performed under the conditions, and then the resin that could not be removed by electropolishing was subjected to ion gun conditions: 4 kV, sputtering rate: 18.53 nm / min, target current: 4.1 μA, pressure: 7.4 mPa It is removed by argon etching.
When the resin removal step is completed, the lead frame substrate 1 is completed.

その後、図４（ｈ）に示すように、バッド部１１上にＬＥＤ素子１００を搭載し、ワイヤー１０１を用いたワイヤーボンディングによりＬＥＤ素子１００と接続エリア１２とを接続してＬＥＤ素子１００を実装する。さらに、図４（ｉ）に示すように、キャビティＣに封止樹脂１０２を充填してＬＥＤ素子１００を封止すると、ＬＥＤパッケージ１１０が完成する。   Thereafter, as shown in FIG. 4H, the LED element 100 is mounted on the pad portion 11, and the LED element 100 and the connection area 12 are connected by wire bonding using the wire 101 to mount the LED element 100. . Further, as shown in FIG. 4I, when the LED element 100 is sealed by filling the cavity C with the sealing resin 102, the LED package 110 is completed.

本実施形態のリードフレーム基板１の製造方法によれば、樹脂形成工程終了後にパッド部１１および接続エリア１２上に残存する樹脂バリ等の余分な樹脂を樹脂除去工程により除去することができる。したがって、パッド部１１および接続エリア１２における樹脂の悪影響を抑制して、ワイヤーボンディングによる接続信頼性の高いリードフレーム基板を製造することができる。   According to the manufacturing method of the lead frame substrate 1 of the present embodiment, it is possible to remove excess resin such as resin burrs remaining on the pad portion 11 and the connection area 12 after the resin formation process is completed by the resin removal process. Therefore, it is possible to manufacture a lead frame substrate with high connection reliability by wire bonding while suppressing adverse effects of the resin in the pad portion 11 and the connection area 12.

また、樹脂除去工程において、放熱部１３Ａ、１３Ｂの面上に残存する樹脂も除去されるため、製造されるＬＥＤパッケージ１１０の裏面が平坦となり、外部基板等との接続信頼性を高めることができる。   In addition, since the resin remaining on the surfaces of the heat radiating portions 13A and 13B is also removed in the resin removing step, the back surface of the manufactured LED package 110 becomes flat, and the connection reliability with an external substrate or the like can be improved. .

さらに、樹脂除去工程がウェットブラスト処理、プラズマ処理、およびウォータージェット処理のいずれかを含んで行われるため、パッド部１１および接続エリア１２の表面に形成されたメッキ層１４を過度にあれさせることなく樹脂バリ等を除去することができる。加えて、メッキ層１４の表面にも反射特性を大きく変化させない程度の微小な凹凸が生じるため、封止樹脂１０２とリードフレーム基板１との密着性を高めることができる。   Furthermore, since the resin removing process is performed including any of wet blasting, plasma processing, and water jet processing, the plating layer 14 formed on the surfaces of the pad portion 11 and the connection area 12 is not excessively exposed. Resin burrs and the like can be removed. In addition, since the surface of the plating layer 14 has minute irregularities that do not significantly change the reflection characteristics, the adhesion between the sealing resin 102 and the lead frame substrate 1 can be enhanced.

以上、本発明の一実施形態について説明したが、本発明の技術範囲は上記実施の形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において各構成要素に種々の変更を加えたり、削除したりすることが可能である。   Although one embodiment of the present invention has been described above, the technical scope of the present invention is not limited to the above embodiment, and various modifications may be made to each component without departing from the spirit of the present invention. , Can be deleted.

例えば、本発明のリードフレーム基板の製造方法においては、一枚の金属板にパッド部および接続エリアを複数組形成し、各組に対応するように複数のリフレクター部を有する樹脂部を形成して、その後、一つずつ切り離すことにより多数のリードフレーム基板が製造されてもよい。   For example, in the method for manufacturing a lead frame substrate of the present invention, a plurality of pad portions and connection areas are formed on a single metal plate, and a resin portion having a plurality of reflector portions is formed to correspond to each set. Thereafter, a large number of lead frame substrates may be manufactured by separating them one by one.

１ ＬＥＤ素子用リードフレーム基板
１０ フレーム部
１１ パッド部
１２ 接続エリア
１４ メッキ層
２０ 樹脂部
２２ リフレクター部
３０ 金属板
１００ ＬＥＤ素子
１０１ ワイヤー DESCRIPTION OF SYMBOLS 1 LED element lead frame substrate 10 Frame part 11 Pad part 12 Connection area 14 Plating layer 20 Resin part 22 Reflector part 30 Metal plate 100 LED element 101 Wire

Claims (3)

ＬＥＤ素子が搭載されるパッド部と、ワイヤーを介して前記パッド部に搭載された前記ＬＥＤ素子と電気的に接続される接続エリアとを有するフレーム部と、平面視において前記パッド部および前記接続エリアを囲むリフレクター部を有し、前記フレーム部に取り付けられた樹脂部とを備えたＬＥＤ素子用リードフレーム基板の製造方法であって、
金属板に前記パッド部および前記接続エリアを形成して前記フレーム部を形成するエッチング工程と、
前記エッチング工程後に、前記パッド部および前記接続エリアにメッキ層を形成するメッキ処理工程と、
前記メッキ処理工程後に、前記フレーム部に対して前記樹脂部を成形する樹脂部形成工程と、
前記樹脂部形成工程後に、前記パッド部および前記接続エリア上に存在する樹脂を除去する樹脂除去工程と、
を備えることを特徴とするＬＥＤ素子用リードフレーム基板の製造方法。 A frame portion having a pad portion on which an LED element is mounted; and a connection area electrically connected to the LED element mounted on the pad portion via a wire; and the pad portion and the connection area in plan view A lead frame substrate for an LED element comprising a resin part attached to the frame part,
An etching step of forming the frame portion by forming the pad portion and the connection area on a metal plate;
After the etching step, a plating step for forming a plating layer on the pad portion and the connection area;
A resin part forming step of forming the resin part with respect to the frame part after the plating process;
After the resin portion forming step, a resin removing step of removing the resin existing on the pad portion and the connection area;
The manufacturing method of the lead frame board | substrate for LED elements characterized by the above-mentioned. 前記樹脂除去工程では、前記フレーム部において前記パッド部および前記接続エリアが形成された面と反対側の面上においても樹脂が除去されることを特徴とする請求項１に記載のＬＥＤ素子用リードフレーム基板の製造方法。   2. The LED element lead according to claim 1, wherein in the resin removing step, the resin is also removed on a surface of the frame portion opposite to a surface on which the pad portion and the connection area are formed. Manufacturing method of frame substrate. 前記樹脂除去工程は、電界研磨処理、プラズマ処理、およびアルゴンエッチング処理のいずれかを含んで行われることを特徴とする請求項１または２に記載のＬＥＤ素子用リードフレーム基板の製造方法。   3. The method for manufacturing a lead frame substrate for an LED element according to claim 1, wherein the resin removal step includes any one of an electropolishing process, a plasma process, and an argon etching process.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015070247A (en) * 2013-10-01 2015-04-13 アピックヤマダ株式会社 Manufacturing method of lead frame substrate, manufacturing method of light emitting device, manufacturing method of lead frame for light emitting diode, and lead frame structure for diode
JP2017103302A (en) * 2015-11-30 2017-06-08 Ｓｈマテリアル株式会社 Multi-row type led lead frame, led package, and manufacturing method of multi-row type led lead frame

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015070247A (en) * 2013-10-01 2015-04-13 アピックヤマダ株式会社 Manufacturing method of lead frame substrate, manufacturing method of light emitting device, manufacturing method of lead frame for light emitting diode, and lead frame structure for diode
JP2017103302A (en) * 2015-11-30 2017-06-08 Ｓｈマテリアル株式会社 Multi-row type led lead frame, led package, and manufacturing method of multi-row type led lead frame

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