JP5220837B2 - 積層セラミックキャパシタ及びその製造方法 - Google Patents
積層セラミックキャパシタ及びその製造方法 Download PDFInfo
- Publication number
- JP5220837B2 JP5220837B2 JP2010285606A JP2010285606A JP5220837B2 JP 5220837 B2 JP5220837 B2 JP 5220837B2 JP 2010285606 A JP2010285606 A JP 2010285606A JP 2010285606 A JP2010285606 A JP 2010285606A JP 5220837 B2 JP5220837 B2 JP 5220837B2
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- Prior art keywords
- external electrode
- ceramic capacitor
- forming material
- multilayer ceramic
- diffusion layer
- Prior art date
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- 239000003985 ceramic capacitor Substances 0.000 title claims description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010410 layer Substances 0.000 claims description 76
- 238000009792 diffusion process Methods 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 41
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 239000003990 capacitor Substances 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 238000010304 firing Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 2
- 230000035939 shock Effects 0.000 description 5
- 239000002003 electrode paste Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Description
2 外部電極
4 内部電極
4a 非拡散層
4b 拡散層
6 誘電体層
10 保護層
20 有効層
Claims (11)
- 内部電極形成物質を含む内部電極及び誘電体層が交互に積層されたキャパシタ本体と、
前記キャパシタ本体の外部表面に形成されて前記内部電極に電気的に接続され、外部電極形成物質を含む外部電極とを含み、
前記内部電極は、前記外部電極形成物質を2〜20vol%含む非拡散層、及び前記非拡散層の両側端部の少なくとも一方の端部に形成される、前記外部電極形成物質の拡散層を備えることを特徴とする積層セラミックキャパシタ。 - 前記非拡散層は、ニッケル又はニッケル合金及び前記外部電極形成物質を含むことを特徴とする請求項1に記載の積層セラミックキャパシタ。
- 前記外部電極形成物質は、銅又は銅合金を含むことを特徴とする請求項1に記載の積層セラミックキャパシタ。
- 前記拡散層は、ニッケル銅合金を含むことを特徴とする請求項1に記載の積層セラミックキャパシタ。
- 前記誘電体層の積層数が50〜1000であることを特徴とする請求項1に記載の積層セラミックキャパシタ。
- 内部電極形成物質を含む内部電極及び誘電体層を交互に積層してキャパシタ本体を形成する段階と、
前記キャパシタ本体の上面及び下面の少なくとも一面に誘電体形成物質を含む保護層を形成する段階と、
前記キャパシタ本体を加圧する段階と、
前記キャパシタ本体を焼成する段階とを含み、
前記内部電極は、前記外部電極形成物質を2〜20vol%含む非拡散層、及び前記非拡散層の両側端部の少なくとも一方の端部に形成される、前記外部電極形成物質の拡散層を備えることを特徴とする積層セラミックキャパシタの製造方法。 - 前記非拡散層は、ニッケル又はニッケル合金及び前記外部電極形成物質からなることを特徴とする請求項6に記載の積層セラミックキャパシタの製造方法。
- 前記外部電極形成物質は、銅又は銅合金からなることを特徴とする請求項6に記載の積層セラミックキャパシタの製造方法。
- 前記拡散層は、ニッケル銅合金からなることを特徴とする請求項6に記載の積層セラミックキャパシタの製造方法。
- 前記加圧段階と前記焼成段階との間に、個別単位を形成するように前記キャパシタ本体を切断する段階をさらに含むことを特徴とする請求項6に記載の積層セラミックキャパシタの製造方法。
- 前記誘電体層の積層数が50〜1000であることを特徴とする請求項6に記載の積層セラミックキャパシタの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0129304 | 2009-12-22 | ||
KR1020090129304A KR101060824B1 (ko) | 2009-12-22 | 2009-12-22 | 적층 세라믹 커패시터 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011135082A JP2011135082A (ja) | 2011-07-07 |
JP5220837B2 true JP5220837B2 (ja) | 2013-06-26 |
Family
ID=44150740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010285606A Expired - Fee Related JP5220837B2 (ja) | 2009-12-22 | 2010-12-22 | 積層セラミックキャパシタ及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20110149471A1 (ja) |
JP (1) | JP5220837B2 (ja) |
KR (1) | KR101060824B1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101771724B1 (ko) * | 2012-04-18 | 2017-08-25 | 삼성전기주식회사 | 적층 세라믹 전자부품 및 이의 제조방법 |
KR102061502B1 (ko) * | 2013-03-19 | 2020-01-02 | 삼성전기주식회사 | 적층 세라믹 전자부품 및 이의 제조방법 |
CN105144323B (zh) * | 2013-04-25 | 2018-07-17 | 株式会社村田制作所 | 层叠陶瓷电容器以及其制造方法 |
KR101496816B1 (ko) * | 2013-04-26 | 2015-02-27 | 삼성전기주식회사 | 적층 세라믹 전자 부품 및 그 실장 기판 |
JP6513328B2 (ja) * | 2013-07-10 | 2019-05-15 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP2018037473A (ja) * | 2016-08-30 | 2018-03-08 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP7427460B2 (ja) * | 2019-04-22 | 2024-02-05 | 太陽誘電株式会社 | セラミック電子部品、回路基板、およびセラミック電子部品の製造方法 |
KR20230098986A (ko) * | 2021-12-27 | 2023-07-04 | 삼성전기주식회사 | 적층형 커패시터 |
Family Cites Families (14)
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JP2990819B2 (ja) * | 1991-02-16 | 1999-12-13 | 株式会社村田製作所 | 粒界絶縁型半導体磁器積層コンデンサ |
JPH08102426A (ja) * | 1994-09-30 | 1996-04-16 | Taiyo Yuden Co Ltd | 磁器コンデンサ及びその製造方法 |
JP2001307947A (ja) * | 2000-04-25 | 2001-11-02 | Tdk Corp | 積層チップ部品及びその製造方法 |
JP4081987B2 (ja) * | 2000-05-30 | 2008-04-30 | 株式会社村田製作所 | 金属粉末の製造方法,金属粉末,これを用いた導電性ペーストならびにこれを用いた積層セラミック電子部品 |
US7177137B2 (en) * | 2002-04-15 | 2007-02-13 | Avx Corporation | Plated terminations |
US7576968B2 (en) * | 2002-04-15 | 2009-08-18 | Avx Corporation | Plated terminations and method of forming using electrolytic plating |
JP4765321B2 (ja) * | 2005-01-21 | 2011-09-07 | 株式会社村田製作所 | 導電性ペースト |
JP4635928B2 (ja) * | 2006-03-27 | 2011-02-23 | Tdk株式会社 | 積層型電子部品およびその製造方法 |
JP4782598B2 (ja) * | 2006-03-28 | 2011-09-28 | 京セラ株式会社 | 積層セラミックコンデンサ |
JP4936825B2 (ja) * | 2006-08-02 | 2012-05-23 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP5127703B2 (ja) * | 2006-11-15 | 2013-01-23 | 株式会社村田製作所 | 積層型電子部品およびその製造方法 |
JP5289794B2 (ja) * | 2007-03-28 | 2013-09-11 | 株式会社村田製作所 | 積層型電子部品およびその製造方法 |
JP4933968B2 (ja) * | 2007-07-04 | 2012-05-16 | Tdk株式会社 | セラミック電子部品 |
JP2010129621A (ja) * | 2008-11-26 | 2010-06-10 | Murata Mfg Co Ltd | 積層セラミック電子部品およびその製造方法 |
-
2009
- 2009-12-22 KR KR1020090129304A patent/KR101060824B1/ko not_active IP Right Cessation
-
2010
- 2010-12-22 JP JP2010285606A patent/JP5220837B2/ja not_active Expired - Fee Related
- 2010-12-22 US US12/976,500 patent/US20110149471A1/en not_active Abandoned
-
2015
- 2015-03-09 US US14/642,229 patent/US20150179340A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20110072397A (ko) | 2011-06-29 |
JP2011135082A (ja) | 2011-07-07 |
KR101060824B1 (ko) | 2011-08-30 |
US20150179340A1 (en) | 2015-06-25 |
US20110149471A1 (en) | 2011-06-23 |
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