JP5160837B2 - 発光装置及びその製造方法、ライトユニット - Google Patents
発光装置及びその製造方法、ライトユニット Download PDFInfo
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- JP5160837B2 JP5160837B2 JP2007214387A JP2007214387A JP5160837B2 JP 5160837 B2 JP5160837 B2 JP 5160837B2 JP 2007214387 A JP2007214387 A JP 2007214387A JP 2007214387 A JP2007214387 A JP 2007214387A JP 5160837 B2 JP5160837 B2 JP 5160837B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 145
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- 229910052727 yttrium Inorganic materials 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
- Led Devices (AREA)
- Liquid Crystal (AREA)
Description
Claims (19)
- 複数のリードフレームを有する第1基板と、
前記第1基板の上で分離して配置される第2基板であって、分離して配置される当該第2基板と前記第1基板とによって三面が開放された開口部を形成する第2基板と、
前記開口部を形成する前記第1基板上に搭載された発光素子と、
前記開口部を形成する前記第2基板の相対する壁面に形成された反射フレームと、
前記開口部の領域に形成されたモールド部材と、
を含むことを特徴とする発光装置。 - 前記開口部は、2つの前記第2基板の間に形成されることを特徴とする請求項1に記載の発光装置。
- 前記反射フレームの両端は前記第2基板の上面および下面に形成されることを特徴とする請求項1または請求項2に記載の発光装置。
- 前記反射フレームは、垂直にまたは傾いて形成されることを特徴とする請求項1から請求項3のいずれか1項に記載の発光装置。
- 前記モールド部材は、凸状、凹状、フラット状のうち何れか一つの形態に形成されることを特徴とする請求項1から請求項4のいずれか1項に記載の発光装置。
- 前記モールド部材は、透明な材質または蛍光体が添加された透明な材質で形成されることを特徴とする請求項1から請求項5のいずれか1項に記載の発光装置。
- 前記リードフレームに形成された一つ以上の放熱孔をさらに含むことを特徴とする請求項1から請求項6のいずれか1項に記載の発光装置。
- 前記発光素子は、少なくとも一つのカラーLEDチップを含み、前記第1基板の複数のリードフレームに連結されることを特徴とする請求項1から請求項5のいずれか1項に記載の発光装置。
- 前記第1基板と前記第2基板とを接着する接着部材をさらに含むことを特徴とする請求項1から請求項8のいずれか1項に記載の発光装置。
- 前記第2基板の上に配置され、開口部を形成する第3基板をさらに含むことを特徴とする請求項1から請求項9のいずれか1項に記載の発光装置。
- 前記第3基板で形成される開口部は、前記第2基板で形成される開口部の直径より大きい直径を有することを特徴とする請求項10に記載の発光装置。
- 前記第1基板、前記第2基板及び前記開口部は同一な幅を有することを特徴とする請求項1から請求項11のいずれか1項に記載の発光装置。
- 前記モールド部材の幅は前記開口部の幅と同一に形成されることを特徴とする請求項12に記載の発光装置。
- 複数のリードフレームを有する第1基板と、
前記第1基板の上で分離して配置される第2基板であって、分離して配置される当該第2基板と前記第1基板とによって三面が開放された開口部を形成する第2基板と、
前記開口部を形成する前記第1基板のリードフレームに連結された発光素子と、
前記開口部を形成する前記第2基板の相対する壁面に形成された反射フレームと、
前記開口部の領域に形成されたモールド部材と、を含む一つ以上の発光装置と、
前記発光装置の光出射経路に配置された光学部材と、
を含むことを特徴とするライトユニット。 - 前記光学部材は、導光板、拡散シート、プリズムシートのうち少なくとも一つを含むことを特徴とする請求項14に記載のライトユニット。
- 前記発光装置は、直下方式またはエッジ方式で利用されることを特徴とする請求項14または請求項15に記載のライトユニット。
- 前記発光装置の外側には、前記開口部から漏れる光の経路を変更する反射板または反射シートを含むことを特徴とする請求項14から請求項16のいずれか1項に記載のライトユニット。
- 前記第1基板、前記第2基板、前記開口部および前記モールド部材の幅は同一に形成されることを特徴とする請求項14から請求項17のいずれか1項に記載のライトユニット。
- 第1基板に複数のリードフレームを形成するステップと、
前記第1基板の上で分離して配置される第2基板であって、分離して配置される当該第2基板と前記第1基板とによって三面が開放された開口部を形成する第2基板を配置するステップと、
前記開口部を形成する前記第1基板のリードフレームに、発光素子を搭載するステップと、
前記第2基板で形成される開口部にモールド部材を配置するステップと、を含み、
前記開口部を形成する前記第2基板の相対する壁面には反射フレームが形成されることを特徴とする発光装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2006-0080216 | 2006-08-24 | ||
KR1020060080216A KR100851194B1 (ko) | 2006-08-24 | 2006-08-24 | 발광 장치 및 그 제조방법, 백 라이트 장치 |
Publications (2)
Publication Number | Publication Date |
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JP2008053718A JP2008053718A (ja) | 2008-03-06 |
JP5160837B2 true JP5160837B2 (ja) | 2013-03-13 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007214387A Expired - Fee Related JP5160837B2 (ja) | 2006-08-24 | 2007-08-21 | 発光装置及びその製造方法、ライトユニット |
Country Status (3)
Country | Link |
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US (1) | US8704263B2 (ja) |
JP (1) | JP5160837B2 (ja) |
KR (1) | KR100851194B1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102008051928A1 (de) * | 2008-10-16 | 2010-04-22 | Osram Opto Semiconductors Gmbh | Elektrischer Anschlussleiter für ein Halbleiterbauelement, Halbleiterbauelement und Verfahren zur Herstellung eines elektrischen Anschlussleiters |
KR101051488B1 (ko) * | 2009-01-23 | 2011-07-25 | 주식회사 두성에이텍 | 발광 다이오드 유닛의 제조 방법과, 이 방법에 의하여 제조된 발광 다이오드 유닛 |
CN101692441B (zh) * | 2009-04-16 | 2012-04-11 | 旭丽电子(广州)有限公司 | 一种印刷电路板封装结构 |
US8441020B2 (en) * | 2010-03-10 | 2013-05-14 | Micron Technology, Inc. | Light emitting diode wafer-level package with self-aligning features |
KR101724707B1 (ko) * | 2010-10-05 | 2017-04-10 | 엘지이노텍 주식회사 | 라이트 유닛 |
KR101189016B1 (ko) * | 2011-05-20 | 2012-10-08 | 한국광기술원 | 발광다이오드 패키지 |
CN102832295A (zh) | 2011-06-14 | 2012-12-19 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
CN102842667B (zh) * | 2011-06-24 | 2015-02-04 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
KR20130022606A (ko) * | 2011-08-25 | 2013-03-07 | 삼성전자주식회사 | 조명 장치 |
KR101222831B1 (ko) * | 2011-09-16 | 2013-01-15 | 삼성전기주식회사 | 전력 모듈 패키지 |
CN104064655B (zh) * | 2013-03-22 | 2019-02-01 | 光宝电子(广州)有限公司 | Led封装体及其制造方法 |
KR20160062803A (ko) | 2014-11-25 | 2016-06-03 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR20160141301A (ko) * | 2015-05-29 | 2016-12-08 | 삼성전자주식회사 | 반도체 발광 소자 패키지 |
JP6595840B2 (ja) * | 2015-08-20 | 2019-10-23 | ローム株式会社 | 半導体装置およびその製造方法 |
US9658489B1 (en) * | 2015-12-31 | 2017-05-23 | Nanosys, Inc. | Backlight units for display devices |
US10615321B2 (en) * | 2017-08-21 | 2020-04-07 | Seoul Semiconductor Co., Ltd. | Light emitting device package |
JP7150547B2 (ja) | 2018-09-27 | 2022-10-11 | 日亜化学工業株式会社 | 発光装置の製造方法 |
EP3874566A1 (en) * | 2018-11-01 | 2021-09-08 | Excelitas Canada Inc. | Quad flat no-leads package for side emitting laser diode |
TWI691671B (zh) * | 2018-12-05 | 2020-04-21 | 海華科技股份有限公司 | 覆晶式發光模組 |
JP7248493B2 (ja) * | 2019-04-26 | 2023-03-29 | 新光電気工業株式会社 | 部品内蔵基板及びその製造方法 |
CN114141937B (zh) * | 2021-11-16 | 2024-01-09 | Tcl华星光电技术有限公司 | 背光板及显示面板 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6243508B1 (en) * | 1999-06-01 | 2001-06-05 | Picolight Incorporated | Electro-opto-mechanical assembly for coupling a light source or receiver to an optical waveguide |
JP2002076161A (ja) * | 2000-08-23 | 2002-03-15 | Matsushita Electric Ind Co Ltd | 表面実装型の半導体装置 |
KR100439402B1 (ko) * | 2001-12-24 | 2004-07-09 | 삼성전기주식회사 | 발광다이오드 패키지 |
JP4206746B2 (ja) * | 2002-01-18 | 2009-01-14 | パナソニック株式会社 | バックライト用光源 |
JP3908157B2 (ja) * | 2002-01-24 | 2007-04-25 | Necエレクトロニクス株式会社 | フリップチップ型半導体装置の製造方法 |
JP2005112345A (ja) | 2003-09-19 | 2005-04-28 | Toyobo Co Ltd | 移動体用液体燃料容器 |
KR100586944B1 (ko) * | 2003-12-26 | 2006-06-07 | 삼성전기주식회사 | 고출력 발광다이오드 패키지 및 제조방법 |
JP2006186297A (ja) * | 2004-12-03 | 2006-07-13 | Toshiba Corp | 半導体発光装置及びその製造方法 |
-
2006
- 2006-08-24 KR KR1020060080216A patent/KR100851194B1/ko active IP Right Grant
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2007
- 2007-08-21 JP JP2007214387A patent/JP5160837B2/ja not_active Expired - Fee Related
- 2007-08-24 US US11/844,837 patent/US8704263B2/en active Active
Also Published As
Publication number | Publication date |
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KR100851194B1 (ko) | 2008-08-08 |
KR20080018309A (ko) | 2008-02-28 |
JP2008053718A (ja) | 2008-03-06 |
US20080048203A1 (en) | 2008-02-28 |
US8704263B2 (en) | 2014-04-22 |
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