JP4914548B2 - Photoelectric conversion cell, imaging device, imaging method, and driving method of imaging device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an object imaging device using a photoelectric conversion cell array, and in particular, can recognize a subject, that is, a moving direction of a target object or a shape of the target object without using a complicated configuration. The present invention relates to an object imaging apparatus using a photoelectric conversion cell array.
[0002]
[Prior art]
FIG. 11 is a circuit block diagram of a conventional MOS type solid-state imaging device 111. 12 is a configuration diagram of the photoelectric conversion cells 131 arranged in a matrix of the MOS type solid-state imaging device 111 shown in FIG. 11, and FIG. 13 shows image data irradiated to the MOS type solid-state imaging device 111 in FIG. FIG. 14 is a drive signal timing chart of the MOS type solid-state imaging device for reading out, and FIG. 14 is a system block for reading out image data irradiated on the MOS type solid-state imaging device 111 in FIG. FIG.
[0003]
First, the configuration of a conventional MOS solid-state imaging device 111 will be described with reference to FIG.
[0004]
The MOS type solid-state imaging device 111 includes a photoelectric conversion cell array 113 arranged in a matrix and a vertical selection circuit connected to the photoelectric conversion cell array 113 for selecting the row direction of the photoelectric conversion cell array 113 arranged in a matrix. 117, a horizontal selection circuit 115 connected to the photoelectric conversion cell array 113 for selecting output data from the photoelectric conversion cell array 113, and a load connected to the photoelectric conversion cell array 113 for reading data from the photoelectric conversion cell array 113 The circuit array 119 is further configured by a control circuit 121 and an output amplifier 123 for controlling the MOS type solid-state imaging device 111. The control circuit 121 is connected to the horizontal selection circuit 115, the vertical selection circuit 117, and the photoelectric conversion cell array 113. is doing.
[0005]
The horizontal selection circuit 115 is connected to the output amplifier 123, and output data from the photoelectric conversion cell array 113 is output from the output terminal 125.
[0006]
Next, the configuration of the photoelectric conversion cell 131 configuring the photoelectric conversion cell array 113 will be described with reference to FIG.
[0007]
That is, the drain terminal of the reset MOS transistor 133 is commonly connected to all the photoelectric conversion cells 131 as the reset voltage terminal 135, and the gate terminal of the reset MOS transistor 133 is common to all the photoelectric conversion cells 131 as the reset signal terminal 137. Connected to.
[0008]
The source terminal of the reset MOS transistor 133 is connected to the cathode terminal of the photodiode 139 that is photoelectric conversion, one end of the parasitic capacitor 141, and the gate of the amplifier MOS transistor 143.
[0009]
On the other hand, the gate of the selection MOS transistor 145 is commonly connected to each row of the photoelectric conversion cells 131 arranged in a matrix as the vertical selection terminal 147 and connected to the vertical selection circuit 117, and the drain of the selection MOS transistor 145 is The data output terminals 151 are connected in common to the columns of the photoelectric conversion cells 131 arranged in a matrix, and are connected to the load circuit cell array 119 and the horizontal selection circuit 115. The source of the selection MOS transistor 145 is connected to the drain of the amplifier MOS transistor 143.
[0010]
The bulk of the reset MOS transistor 133, the bulk and source of the amplifier MOS transistor 143, the bulk of the selection MOS transistor 145, the other terminal of the parasitic capacitance 141, and the anode terminal of the photodiode 139 are all in common. It is connected to the ground potential 151.
[0011]
Next, an operation of reading image data of a subject irradiated on the MOS type solid-state imaging device 111 will be described with reference to FIGS.
[0012]
That is, FIG. 13 is a timing for capturing image data in the N frame 171. First, the reset signal 161 for the reset time 173 is input to the reset signal terminals 137 of all the photoelectric conversion cells 131.
[0013]
By this operation, the parasitic capacitors 141 arranged in all the photoelectric conversion cells 131 are reset. Then, the image data irradiated to each photodiode 139 which is a light receiving unit of each photoelectric conversion cell 131 in the period of the accumulation time 163 after the reset time 173 ends is accumulated in the parasitic capacitance 141 by the incident light amount.
[0014]
The image data stored in the parasitic capacitor 141 is amplified by the amplifier MOS transistor 143 disposed in each photoelectric conversion cell 131, and the voltage is converted into the load circuit cell array 119 by turning on the selection MOS transistor 145. Can be read out.
[0015]
That is, in order to read out the image data stored in each of the parasitic capacitors 141 arranged in all the photoelectric conversion cells 131, the vertical address signal 167 from the vertical selection circuit 117 is converted into the photoelectric conversion cell array 113 after the storage time 163 ends. A vertical selection terminal 147 in a certain row is selected, whereby the selection MOS transistor 145 is turned on, and the image data voltage-converted to the load circuit cell array 119 is output from the data output terminal 151 as the output signal 169.
[0016]
Further, during the period when the vertical selection terminal 147 of one row is selected by the vertical address signal 167, the image data of all the photoelectric conversion cells 131 connected to this row are sequentially transferred by the horizontal address signal 165 from the horizontal selection circuit 115. The signal is sent to the output circuit 123, amplified, and output from the output terminal 125.
[0017]
Then, the vertical address signal 167 and the horizontal address signal 165 are sequentially input to the photoelectric conversion cell array 113, whereby the image data stored in each parasitic capacitor 141 disposed in all the photoelectric conversion cells 131 is sequentially input to the data output terminal. 151 can be obtained as an output signal 169.
[0018]
Image data stored in all the photoelectric conversion cells 131 by the above driving method is output from the MOS type solid-state imaging device 111 in one frame period 171.
[0019]
Next, means for obtaining the moving direction information of the subject using the conventional MOS type solid-state imaging device 111 will be described with reference to FIG.
[0020]
FIG. 14 shows an example of an image processing system using the MOS type solid-state imaging device 111. The output terminal 125 of the MOS type solid-state imaging device 111 is connected to the A / D conversion circuit 181, and is output to the A / D conversion circuit 181. Connects the input of the first memory circuit 183 and the input of the second memory circuit 185.
[0021]
A data comparison circuit 187 is connected to the output of the first memory circuit 183 and the output of the second memory circuit 185. Although not shown in FIG. 14, a control circuit such as a microcomputer is required to control the system.
[0022]
Next, the operation of this image processing system will be described.
[0023]
First, image data of N frames obtained from the MOS type solid-state imaging device 111 is digitized by the A / D conversion circuit 181, input to the first memory circuit 183 and stored. Next, the N + 1 frame image data obtained from the MOS type solid-state imaging device 111 is digitized by the A / D conversion circuit 181 and input to the second memory circuit 185 for storage. Then, the data comparison circuit 187 compares the N frame image data and the N + 1 frame image data, and outputs them from the comparison data output terminal 189. The moving direction information of the subject can be obtained from the output signal from the comparison data output terminal 189.
[0024]
[Problems to be solved by the invention]
The conventional MOS type solid-state imaging device is configured as described above, and is driven as described above to read out image data of a subject. In order to read out image data from the MOS type solid-state imaging device, a selection MOS transistor In order to select, the vertical selection circuit is selected in order, and the horizontal selection circuit is selected in the meantime to sequentially read out data of one pixel and one pixel.
[0025]
In order to construct a system for obtaining the moving direction information of the subject, the image data output from the MOS type solid-state imaging device is digitally converted by an A / D conversion circuit and temporarily stored in a separate memory circuit for each frame. In order to obtain subject movement information, N frame image data and N + 1 frame image data are temporarily stored in separate memory circuits, and then compared with each other to obtain subject movement direction information. It was.
[0026]
That is, in order to obtain the moving direction information of the subject, a vertical selection circuit and a horizontal selection circuit are required in the MOS type solid-state imaging device, and a selection MOS transistor is required in the photoelectric conversion cell.
[0027]
In order to obtain image information, it is necessary to sequentially read out pixel data for each pixel, which is very time consuming. There is also a problem that the chip area is large due to circuits such as a vertical selection circuit and a horizontal selection circuit. Further, in addition to the MOS type solid-state imaging device, an A / D conversion circuit and a plurality of memory circuits are required, so that the driving method of each circuit is complicated and processing time is also required.
[0028]
The object of the present invention is to improve the above-mentioned drawbacks of the prior art, and does not require a scan processing circuit, an analog / digital conversion circuit, a sequential reading, a writing circuit, etc. It is an object of the present invention to provide an object imaging apparatus using a downsized photoelectric conversion cell array that can determine the moving direction of the detected object or recognize the shape of the detected object.
[0029]
That is, in the present invention, in a field where it is not necessary to accurately image a subject like the conventional one, the moving direction of the object to be inspected or the shape of the object to be inspected is at a certain level. It will be useful when used in fields where it can be recognized by.
[0030]
[Means for Solving the Problems]
In order to achieve the above-described object, the present invention employs a technical configuration as described below. That is, as a first aspect according to the present invention, there is one photodiode, one I / V conversion control means, two amplifier control means arranged independently connected to the photodiode, and A photoelectric conversion cell for a photoelectric conversion cell array comprising: a second embodiment in the present invention, a photoelectric conversion cell array in which a plurality of the photoelectric conversion cells described above are arranged in a matrix, and A vertical load circuit array, a horizontal load circuit array, a vertical data processing circuit, and a horizontal data processing circuit connected to the photoelectric conversion cell array are provided, and at the same time, the vertical data processing circuit and the horizontal data processing circuit The connected output processing circuit, the photoelectric conversion cell array, the vertical load circuit array, the horizontal load circuit array, the vertical data processing circuit, and the horizontal data A processing circuit, is an object imaging device and a control circuit connected to the output processing circuit.
[0031]
Further, according to a third aspect of the present invention, in the object imaging apparatus described above, the control in each of the I / V conversion control means in the photoelectric conversion cell constituting the photoelectric conversion cell array. A constant voltage is applied to the terminal, a reset signal is input to a reset terminal which is one of the output terminals in the I / V conversion control means, and then a vertical signal determination process in the vertical data processing circuit A circuit stores in time series voltage values that are always output from the individual vertical data processing circuit cells connected to the individual vertical signal lines, and a horizontal signal determination processing circuit in the horizontal data processing circuit The voltage value constantly output from each vertical data processing circuit cell connected to each vertical signal line is stored as a voltage waveform in time series, and then the vertical signal determination processing circuit And the movement of the object to be measured moved on the photoelectric conversion cell array from the voltage waveform on the vertical signal line and the horizontal signal line obtained from each of the horizontal signal determination processing circuits or existing on the photoelectric conversion cell array. This is a method for driving an object imaging apparatus configured to identify a direction or a shape of an object to be measured.
[0032]
BEST MODE FOR CARRYING OUT THE INVENTION
The photoelectric conversion cell according to the present invention, the object imaging device using the photoelectric conversion cell array, and the driving method of the object imaging device adopt the technical configuration as described above, and basically, a matrix The circuit configuration and readout method of the photoelectric conversion cells arranged in a matrix are characterized. More specifically, the data of each photoelectric conversion cell arranged in a matrix array is transferred in the vertical direction of all the photoelectric conversion cells. This is an object imaging device having a function of simultaneously processing image data in the horizontal direction, and particularly suitable for easily acquiring information on the moving direction of the subject.
[0033]
【Example】
Hereinafter, the configuration of a specific example of the photoelectric conversion cell and the object imaging device according to the present invention will be described in detail with reference to the drawings.
[0034]
That is, FIG. 1 is a circuit diagram showing a configuration of a specific example of the photoelectric conversion cell according to the present invention. In the figure, one photodiode 39, one I / V conversion control means 33, and two mutual ones are shown. Shown is a photoelectric conversion cell 31 for a photoelectric conversion cell array which is composed of amplifier control means 43 and 45 which are independently connected to the photodiode 39 and arranged.
[0035]
As the photodiode 39 in the present invention, a conventionally known one can be used, and the amplifier control means 43 and 45 in the present invention are not particularly limited, but the current flowing through the photodiode 39 is not limited. Any configuration can be used as long as it has a configuration capable of amplifying the current in response to the signal and outputting it to the vertical signal line 49 or the horizontal signal line 51.
Similarly, the I / V conversion control means 33 is not particularly limited, but has a reset function and a function of converting a photocurrent flowing through the photodiode 39 into a voltage with logarithmic output characteristics. Any configuration can be used.
[0036]
The amplifier control means 43 and 45 and the I / V conversion control means 33 in the present invention can use transistors, and can use bipolar transistors, FET transistors, or the like.
[0037]
If a more detailed configuration of the photoelectric conversion cell 31 used in the present invention is described, one control terminal S1 and S2 are connected to one photodiode 39 and the first terminal t1 of the photodiode 39, respectively. The first output terminals t3 and t4 are connected to the grounded second terminal t2 of the photodiode 39, and the second output terminals t5 and t6 are connected to the photoelectric conversion cell array 11, respectively. One of the vertical signal line 49 and the horizontal signal line 51, the first and second amplifier control means 43 and 45 individually connected to different signal lines, and the first terminal t 1 of the photodiode 39. It is comprised from the control means 33 for I / V conversion connected to.
[0038]
In the present invention, it is desirable that the first and second amplifier control means 43 and 45 have the same size.
[0039]
In the present invention, the second output terminal t5 of the first amplifier control means 43 is connected to, for example, the horizontal signal line 51 of the photoelectric conversion cell array 11, and the second amplifier terminal The second output terminal t6 of the control means 45 is connected to the vertical signal line 49 of the photoelectric conversion cell array 11.
[0040]
Of course, in the present invention, the connection relationship may be reversed.
[0041]
Furthermore, in the present invention, the amount of light radiated to the photodiode 39 from both the second output terminals t5 and t6 in the first and second amplifier control means 43 and 45 is set. In response, the same amount of current corresponding to the amount of light needs to be configured to be output simultaneously and constantly.
[0042]
In FIG. 1, reference numeral 41 denotes a parasitic capacitance.
[0043]
The first and second amplifier control means 43 and 45 in the present invention are preferably composed of, for example, MOS transistors.
[0044]
In that case, the first and second MOS transistors 43 and 45 are preferably formed to have the same size.
[0045]
On the other hand, in the present invention, the I / V conversion control means 33 is also preferably composed of a MOS transistor.
[0046]
Therefore, as a more preferable specific example of the photoelectric conversion cell 31 according to the present invention, each of the gate control terminals S1 and S2 is connected to one photodiode 39 and the first terminal t1 of the photodiode 39, and 1 output terminals t3 and t4 are connected to the grounded second terminal t2 in the photodiode 39, and the second output terminals t5 and t6 are connected to the vertical signal line 49 and the photoelectric conversion cell array 11, respectively. One of the horizontal signal lines 51 is connected to the first and second amplifier MOS transistors 43 and 45 and the first terminal t1 of the photodiode 39 which are individually connected to different signal lines. This is a photoelectric conversion cell 11 composed of an I / V conversion MOS transistor 33.
[0047]
Furthermore, the first terminal t1 of the photodiode 39, the gate terminal S1 of the first amplifier MOS transistor 43, and the second amplifier are connected to the source terminal t7 of the I / V conversion MOS transistor 33 in the present invention. The gate terminal S2 of the MOS transistor 45 is connected, and the bulk B1 of the I / V conversion MOS transistor 33, the source terminal t3 of the first amplifier MOS transistor 43 and the bulk B2, and the second amplifier MOS transistor 45 are connected. The source terminal t4 and the bulk B3 and the second terminal t2 of the photodiode 39 are preferably connected in common and grounded.
[0048]
In addition, a voltage (VM) of a predetermined level is input to the gate terminal S3 of the I / V conversion MOS transistor 33 in the photoelectric conversion cell 31 according to the present invention. It is also a desirable specific example that a reset signal (VR) is applied at a predetermined timing to one output terminal (hereinafter referred to as a reset terminal) t8 called a drain terminal.
[0049]
In the above-described photoelectric conversion cell 31 according to the present invention, the first and second amplifier control means 43 and 45 are used for the light depending on the amount of light applied to the photodiode 39. The same amount of current corresponding to the amount of light received by the photodiode 39 is simultaneously and constantly output to both the vertical signal line 49 and the horizontal signal line 51.
[0050]
Next, the configuration of the object imaging apparatus according to the present invention will be described in detail with reference to FIGS.
[0051]
That is, FIG. 2 is a block diagram for explaining the outline of the configuration of a specific example of the photoelectric conversion cell array according to the present invention. In the figure, a plurality of the photoelectric conversion cells 31 according to the present invention are arranged in a matrix. An arranged photoelectric conversion cell array 13, a vertical load circuit array 15 connected to the photoelectric conversion cell array 13, a horizontal load circuit array 17, a vertical data processing circuit 19, and a horizontal data processing circuit 21 are provided. At the same time, the output processing circuit 23 and the photoelectric conversion cell array 13 connected to the vertical data processing circuit 19 and the horizontal data processing circuit 21, the vertical load circuit array 15, the horizontal load circuit array 17, and the vertical data processing circuit. 19, a horizontal data processing circuit 21, and a control circuit 27 connected to the output processing circuit 23. Body imaging device 11 is shown.
[0052]
In the object imaging apparatus 11 according to the present invention, the photoelectric conversion cell array 13 includes a plurality of photoelectric conversion cells 31 as illustrated in FIG. 1 in an arbitrary number in the vertical direction and the horizontal direction, respectively. It is possible to arrange in a matrix form.
[0053]
That is, the photoelectric conversion cell array 13 is configured such that the number of the plurality of photoelectric conversion cells 31 arranged in the vertical direction is different from the number of the plurality of photoelectric conversion cells 31 arranged in the horizontal direction. In addition, it is preferable that the plurality of photoelectric conversion cells 31 arranged in the vertical direction and the horizontal direction are arranged in the same number.
[0054]
In FIG. 3A, the photoelectric conversion cell array 13 includes three photoelectric conversion cells 31 arranged in the vertical direction, and three photoelectric conversion cells 31 arranged in the horizontal direction. An example in which a matrix is formed by the photoelectric conversion cell 31 is shown.
[0055]
Further, in the photoelectric conversion cell 13 according to the present invention, each second terminal t5 in each first amplifier control means 43 is commonly connected to the horizontal signal line 51 for each column, Each second terminal t6 in the second amplifier control means 45 is commonly connected to the vertical signal line 49 for each row, and the control terminal in the I / V conversion control means 33 is connected. S3 and the reset terminal t8 are respectively connected in common to all the photoelectric conversion cells 31.
[0056]
Further, in the object imaging device 11 according to the present invention, a load circuit cell 57 having an I / V conversion function is provided at one end of each horizontal signal line 51, and A horizontal load circuit array 17 is formed by the plurality of load circuit cells 57.
[0057]
Similarly, a load circuit cell 53 having an I / V conversion function is provided at one end portion of each vertical signal line 49, and the vertical load circuit array 15 is formed by the plurality of load circuit cells 53. Is formed.
[0058]
The load circuit cells 53 and 57 provided in the vertical signal line 49 and the horizontal signal line 51 described above respectively convert the currents flowing in the vertical signal line 49 and the horizontal signal line 51 into voltage values. Become.
[0059]
As the load circuit cells 53 and 57 in the present invention, any circuit element can be used as long as it has a function of converting a current into a voltage. For example, as shown in FIG. Such a resistor may be used, or a transistor element may be used.
[0060]
Further, in the other end portion of each vertical signal line 49 in the present invention, the total amount of current output from each photoelectric conversion cell 31 connected to each vertical signal line 49 is I / V. A vertical data processing circuit cell 62 for detecting the voltage value obtained by the conversion is provided, and the vertical data processing circuit 19 is formed by the plurality of vertical data processing circuit cells 62. Similarly, the respective vertical data processing circuit cells 62 are formed. As described above, the other end of the horizontal signal line 51 is obtained by performing I / V conversion on the total amount of current output from each photoelectric conversion cell 31 connected to each horizontal signal line 51. The horizontal data processing circuit cell 63 for detecting the voltage value is provided, and the horizontal data processing circuit 21 is formed by the plurality of horizontal data processing circuit cells 63.
[0061]
On the other hand, in the object imaging device 11 according to the present invention, the vertical data processing circuit cell 62 and the horizontal data processing circuit cell 63 always have a corresponding vertical signal line 49 or horizontal signal. Each of the plurality of photoelectric conversion cells 31 connected to the line 51 is configured to receive a voltage value corresponding to the total amount of light received at that time.
[0062]
The vertical data processing circuit cell 62 and the horizontal data processing circuit cell 63 in the present invention can use a comparison circuit as shown in the figure, but an A / D conversion circuit is used. It may be used.
[0063]
Further, in the present invention, the vertical data processing circuit 19 is provided with a vertical signal determination processing circuit 61 for inputting the output from the individual vertical data processing circuit cell 62 and creating movement information of the target object. Similarly, the horizontal data processing circuit 21 is provided with a horizontal signal determination processing circuit 67 that inputs the output from the individual horizontal data processing circuit cell 63 and creates movement information of the target object. It is also a desirable configuration.
[0064]
In the present invention, the vertical signal determination processing circuit 61 and the horizontal signal determination processing circuit 67 each output a voltage waveform output from each of the plurality of vertical data processing circuit cells 62 or the plurality of horizontal data processing circuit cells 63. It is desirable to be structured to record in series.
[0065]
On the other hand, in the object imaging apparatus 11 according to the present invention, the output processing circuit 23 performs processing based on time-series voltage waveform information output from the vertical signal determination processing circuit 61 and horizontal signal determination processing circuit 67. It has a function of identifying the moving direction of the object or the shape of the target object and outputting the identification information from the output terminal 25. For example, from the vertical signal determination processing circuit 61 and the horizontal signal determination processing circuit 67, A voltage waveform profile that is always output is recorded in time series, and the result is compared with reference information that stores a predetermined movement direction or a predetermined shape in advance to identify the movement direction or shape of the target object. It may be configured to do so.
[0066]
A more detailed specific example of the configuration of the above-described photoelectric conversion cell 31 according to the present invention and the object imaging device 11 using the photoelectric conversion cell and the driving method thereof will be described below.
[0067]
As shown in FIG. 3A, the photoelectric conversion cell array 31 in the present invention has photoelectric conversion cells 31 arranged in a matrix of three columns and three rows, and the vertical signal line 49 of each photoelectric conversion cell 31 is It is assumed that the vertical signal lines 49a, 49b, and 49c are connected to the vertical load circuit array 15 and the vertical data processing circuit 19, respectively.
[0068]
Further, it is assumed that both the above-described I / V conversion control means and amplifier control means are constituted by MOS transistors.
[0069]
The horizontal signal lines 51 of the photoelectric conversion cells 31 are connected in common to the respective columns, and the horizontal signal lines 51a, 51b, 51c are connected to the horizontal load circuit array 17 and the horizontal data processing circuit 21, respectively.
[0070]
Further, the VR terminal 35 of each photoelectric conversion cell 31 is not shown in detail in FIG. 3A, but is connected in common to all the photoelectric conversion cells 31 and connected to the control circuit 27.
[0071]
Similarly, the VM terminal 37 of each photoelectric conversion cell 31 is not shown in detail in FIG. 3A, but is connected in common to all the photoelectric conversion cells 31 and connected to the control circuit 27.
[0072]
The vertical load circuit array 15 includes the same number of vertical load circuit cells 53 as the number of photoelectric conversion cells 31 constituting the photoelectric conversion cell array 13 in the row direction. In this embodiment, a resistor is used as an example of the vertical load circuit cell 53. However, the vertical load circuit cell 53 may be formed using a MOS transistor or the like.
[0073]
Similarly, the horizontal load circuit array 17 includes the same number of horizontal load circuit cells 57 as the number of photoelectric conversion cells 31 constituting the photoelectric conversion cell array 13 in the column direction. In this embodiment, a resistance element is used as an example of the horizontal load circuit cell 57, but the horizontal load circuit cell 57 may be configured using a MOS transistor or the like. The load resistance value of the vertical load circuit cell 53 and the load resistance value of the horizontal load circuit cell 57 are the same value.
[0074]
One end of each vertical load circuit cell 53 is connected to each vertical signal line 49a, 49b, 49c of the photoelectric conversion cell array 13, and one end of each horizontal load circuit cell 57 is connected to each horizontal signal line 51a, 51b of the photoelectric conversion cell array 13. , 51c.
[0075]
The other terminal of each vertical load circuit cell 53 is commonly connected to the load reference voltage line 55 in the vertical load circuit array 15, and the other terminal of each horizontal load circuit cell 57 is connected to the horizontal load circuit array. 17 is connected in common to the load reference voltage line 55. The load reference voltage line 55 is connected to the control circuit 27.
[0076]
The vertical data processing circuit 19 includes the same number of vertical comparator circuit cells 62 as the number of photoelectric conversion cells 31 constituting the photoelectric conversion cell array 13 in the row direction, and a vertical signal determination processing circuit 61. One input terminal of each vertical comparator circuit cell 62 is connected to the vertical signal lines 49a, 49b, 49c of the photoelectric conversion cell 31, and the other terminal of each vertical comparator circuit cell 62 is connected to all the vertical comparator circuit cells 62. They are connected in common and connected to the control circuit 27 as a comparator reference voltage line 73.
[0077]
Each vertical comparator circuit cell output 59a, 59b, 59c of each vertical comparator circuit cell 62 is connected to a vertical signal determination processing circuit 61 composed of a logic circuit, and further, the vertical signal determination processing circuit 61 outputs the vertical signal determination processing circuit 61. 69 is connected to the output processing circuit 23.
[0078]
The horizontal data processing circuit 21 is composed of the same number of horizontal comparator circuit cells 63 as the number of photoelectric conversion cells 31 constituting the photoelectric conversion cell array 13 in the column direction, and a horizontal signal determination processing circuit 67.
[0079]
One input terminal of each horizontal comparator circuit cell 63 is connected to the horizontal signal lines 51 a, 51 b, 51 c of the photoelectric conversion cell 31, and the other terminal of each horizontal comparator circuit cell 63 is all the horizontal comparator circuit cells 63. They are connected in common and connected to the control circuit 27 as a comparator reference voltage line 73.
[0080]
The horizontal comparator circuit cell outputs 65a, 65b, and 65c of each horizontal comparator circuit cell 63 are connected to a horizontal signal determination processing circuit 67 constituted by a logic circuit, and further, the horizontal signal determination processing circuit 67 outputs the horizontal signal determination processing circuit 67. 71 is connected to the output processing circuit 23.
[0081]
Further, unlike the above specific example, in the present invention, a configuration example in which the plurality of photoelectric conversion cells 31 constituting the photoelectric conversion cell array 13 have different numbers of arrays in the vertical direction and the horizontal direction. As shown in FIG.
[0082]
In the above specific example, the basic configuration is substantially the same as the configuration shown in FIG. 3A, but the load reference voltage line 55 and the comparator reference voltage line 73 must be arranged as separate systems. Accordingly, the load reference voltage line 55-1 and the load reference voltage line 55-2, and the comparator reference voltage line 73-1 and the comparator reference voltage line 73-2 are individually provided.
[0083]
Next, the driving method and operating principle of the MOS type imaging device 11 shown in FIG. 3 will be described with reference to FIGS.
[0084]
That is, a constant voltage value Vr75 equal to or lower than the power supply voltage is applied from the control circuit 27 to the VR terminals 35 of all the photoelectric conversion cells 31, and a constant voltage value is applied to the VM terminal 37 from the control circuit 27. Vm77 is applied.
[0085]
The constant voltage value Vm77 is set to a voltage at which the I / V conversion MOS transistor 33 operates to convert the current flowing through the photodiode 39 into a voltage with a logarithmic output characteristic in a weakly inverted state.
[0086]
Then, when the power of the MOS imaging device 11 is turned on or when imaging is started, a reset operation is performed to lower the voltage at the VR terminal 35 from the constant voltage Vr75 to the ground potential for a reset time 79 period. This reset operation does not have to be performed because it is naturally reset when the power of the MOS type image pickup device 11 is turned on, but is performed to ensure the operation.
[0087]
As described above, by applying the constant voltage Vr75 to the VR terminal 35 and the constant voltage Vm77 to the VM terminal 37, the I / V conversion MOS transistor 33 converts the current flowing through the photodiode 39 into a logarithmic voltage. This voltage is applied to the respective gates S1 and S2 of the first amplifier transistor 43 and the second amplifier transistor 45, and the current flowing through the first amplifier transistor 43 is changed to I / O by the horizontal load circuit array 17. V-converted and input to the horizontal data processing circuit 21 from the horizontal signal line 51 as the output voltage of the photoelectric conversion cell 31.
[0088]
Similarly, the current flowing through the second amplifier transistor 45 is I / V converted by the vertical load circuit array 15 and input to the vertical data processing circuit 19 from the vertical signal line 49 as the output voltage of the photoelectric conversion cell 31.
[0089]
5 shows the illuminance of the light receiving surface of the photodiode 39 of one photoelectric conversion cell 31, the output voltage value of the photoelectric conversion cell 31 that appears on the vertical signal line 49 after being I / V converted by the vertical load circuit cell 53, and the horizontal The relationship of the output voltage value of the photoelectric conversion cell 31 which appears on the horizontal signal line 51 after being I / V converted by the load circuit cell 57 is shown in a graph.
[0090]
Here, the transistor sizes of the first amplifier MOS transistor 43 and the second amplifier MOS transistor 45 are the same, and the load resistance value of the vertical load circuit cell 53 and the load resistance value of the horizontal load circuit cell 57 are the same. Since the load reference power supply connected to the vertical load circuit array 15 and the horizontal load circuit array 17 is the same, the output voltages of the photoelectric conversion cells 31 appearing on the vertical signal line 49 and the horizontal signal line 51 have the same voltage value.
[0091]
As shown in FIG. 5, when the photoelectric conversion cell 31 is irradiated with light, the photocurrent flowing in the photodiode 39 increases, and the first amplifier MOS transistor 43 and the second amplifier MOS transistor 45 The gate potential is lowered, and no current flows through the first amplifier MOS transistor 43 and the second amplifier MOS transistor 45. As a result, the output voltage of the photoelectric conversion cell 31 increases.
[0092]
When the photoelectric conversion cell 31 is not irradiated with light, the photocurrent flowing through the photodiode 39 is small, the gate potentials of the first amplifier MOS transistor 43 and the second amplifier MOS transistor 45 are increased, and the first amplifier A current flows through the MOS transistor 43 and the second amplifier MOS transistor 45, and as a result, the output voltage of the photoelectric conversion cell 31 increases.
[0093]
That is, in the photoelectric conversion cell 31 irradiated with light, the photoelectric conversion cell 31 current does not flow through the first amplifier MOS transistor 43 and the second amplifier MOS transistor 45, and no light is irradiated in the photoelectric conversion cell 31. The photoelectric conversion cell 31 current flows through the first amplifier MOS transistor 43 and the second amplifier MOS transistor 45.
[0094]
Since the MOS type solid-state image pickup device 11 of the present invention is set and operated as described above, each photoelectric conversion cell 31 constituting the photoelectric conversion cell array 13 of the MOS type solid-state image pickup device 11 is logarithmized after the reset operation is performed once. There is no need to reset afterwards. In each photoelectric conversion cell 31, the current of the photoelectric conversion cell 31 that reacts to the illuminance flows, and the output voltages of the vertical signal line 49 and the horizontal signal line 51 continue to change.
[0095]
Next, an explanation will be given of the operation when an image is actually captured. Each photoelectric conversion cell 31 is commonly connected to each row and column by a vertical signal line 49 and a horizontal signal line 51. Therefore, a current value obtained by adding the currents flowing through the first amplifier MOS transistors 43 of the plurality of photoelectric conversion cells 31 connected to each column flows into the horizontal load circuit cell 57 and is I / V converted to be applied to the horizontal signal line 51. A voltage value appears and is input to the horizontal data processing circuit 21.
[0096]
Similarly, a current value obtained by adding the currents flowing through the second amplifier MOS transistors 45 of the plurality of photoelectric conversion cells 31 connected to each row flows into the vertical load circuit cell 53 and is I / V converted to the vertical signal line 49. A voltage value appears and is input to the vertical data processing circuit 19.
[0097]
That is, when all the photoelectric conversion cells 31 constituting the photoelectric conversion cell array 13 are irradiated with light, no current flows in each photoelectric conversion cell 31 and the potentials of the vertical signal lines 49 and the horizontal signal lines 51 are based on the load reference. A voltage close to the voltage value applied to the voltage line 55 appears.
[0098]
Further, when light is irradiated to some of the photoelectric conversion cells 31 constituting the photoelectric conversion cell array 13, the total number of photoelectric conversion cells 31 that are not irradiated with light in the photoelectric conversion cells 31 connected to each column and each row. Current flows through each vertical load circuit cell 53 and each horizontal load circuit cell 57, so that the potential of each vertical signal line 49 and each horizontal signal line 51 is lower than the voltage applied to the load reference voltage line 55. appear.
[0099]
A specific example of the above operation will be described with reference to FIGS. 6a and 6b. FIG. 6 a shows a state in which a vertically long rectangular object moves from left to right on the photoelectric conversion cell array 13. A black shadow is formed in the vertical direction on the photoelectric conversion cell array 13, and this shadow moves from left to right.
[0100]
FIG. 6B shows the voltage change of the vertical signal lines 49a, 49b, and 49c and the horizontal signal line lines 51a, 51b, and 51c when the vertically long rectangular object moves from left to right on the photoelectric conversion cell array 13. , The voltage changes of the vertical comparator circuit cell outputs 59a, 59b, 59c of the vertical data processing circuit 19, and the voltage changes of the horizontal comparator circuit cell outputs 65a, 65b, 65c of the horizontal data processing circuit 21 are shown. The horizontal axis shows time.
[0101]
That is, at time T1, the object is on the photoelectric conversion cells 31 (1,1), (2,1), (3,1), and at time T2, the object is at the photoelectric conversion cells 31 (1,2), (2, 2), (3, 2), and at time T3, the object is on the photoelectric conversion cell 31 (1, 3), (2, 3), (3, 3). Time T0 is a time when an object has not yet appeared on the photoelectric conversion cell array 13, and time T4 is a time when the object passes over the photoelectric conversion cell array 13.
[0102]
First, at time T0, a rectangular object that is long in the vertical direction has not yet appeared on the photoelectric conversion cell array 13, and all the photoelectric conversion cells 31 of the photoelectric conversion cell array 13 are irradiated with light, so that each horizontal signal line 51a, The first amplifier MOS transistor 43 of each of the three photoelectric conversion cells 31 connected to 51b and 51c and the second amplifier MOS transistor 45 connected to each of the vertical signal lines 49a, 49b and 49c include No current flows, and the potential levels of the vertical signal lines 49a, 49b, and 49c and the horizontal signal lines 51a, 51b, and 51c become high levels that are close to the voltage value applied to the load reference voltage line 55. For this reason, the vertical comparator circuit cell outputs 59a, 59b, and 59c and the horizontal comparator circuit cell outputs 65a, 65b, and 65c are at a high level.
[0103]
A rectangular object that is long in the vertical direction appears on the photoelectric conversion cell array 13 and moves to the two photoelectric conversion cells 31 connected to the vertical signal lines 49a, 49b, and 49c in all of the movement from left to right with time. Since one of the photoelectric conversion cells 31 is not irradiated with light, a current value flowing through the second amplifier MOS transistor 45 of one photoelectric conversion cell 31 flows through each vertical load circuit cell 53. The output voltage of each vertical signal line 49a, 49b, 49c decreases little and the voltage value is equal, and the voltage value does not change with time. Therefore, the vertical comparator circuit cell outputs 59a, 59b, 59c of the vertical data processing circuit 19 remain at a high level in all the time when a rectangular object elongated in the vertical direction moves on the photoelectric conversion cell array 13 from left to right.
[0104]
On the other hand, in the horizontal signal lines 63a, 63b, and 63c, since a rectangular object that is long in the vertical direction moves from left to right with time, the photoelectric conversion cells 31 (1,1), (2,1), (3 , 1) are shaded, and the total current value flowing through each first amplifier MOS transistor 43 of the three photoelectric conversion cells 31 is the photoelectric conversion cell 31 (1,1), (2,1). ) And (3, 1), the current flows through the horizontal load circuit cell 57, so that the output voltage of the horizontal signal line 63a is greatly reduced.
[0105]
The horizontal comparator circuit cell output 65a of the horizontal data processing circuit 21 is at a low level. However, the photoelectric conversion cells 31 (1, 2), (2, 2), (3, 2) and the photoelectric conversion cells 31 (1, 3), (2, 3), (3, 3) are irradiated with light. The horizontal lines connected to the photoelectric conversion cells 31 (1, 2), (2, 2), (3, 2) and the photoelectric conversion cells 31 (1, 3), (2, 3), (3, 3) Since almost no current flows through the load circuit cell 57, the potentials of the horizontal signal line 63b and the horizontal signal line 63c hardly decrease, and the horizontal comparator circuit cell outputs 65b and 65c of the horizontal data processing circuit 21 become high bell.
[0106]
As a result, at time T2, the horizontal comparator circuit cell output 65b of the horizontal data processing circuit 21 becomes low level, and the horizontal comparator circuit cell outputs 65a and 65c become high bell. At time T3, the horizontal comparator circuit cell output 65c of the horizontal data processing circuit 21 becomes low level, and the horizontal comparator circuit cell outputs 65b and 65c become high bell.
[0107]
As described above, when a rectangular object that is long in the vertical direction moves from left to right with time, the vertical comparator circuit cell outputs 59a, 59b, and 59c of the vertical data processing circuit 19 remain high, but do not change. The horizontal comparator circuit cell outputs 65a, 65b, 65c of 21 change from the high level to the low level in the order of 65a, 65b, 65c, and also to the high level.
[0108]
When a rectangular object that is long in the vertical direction moves from right to left with time, the vertical comparator circuit cell outputs 59a, 59b, and 59c of the vertical data processing circuit 19 remain at a high level, but do not change. The horizontal comparator circuit cell outputs 65a, 65b, 65c of the data processing circuit 21 are changed from high level to low level and also to high level in the order of 65c, 65b, 65a.
[0109]
The vertical comparator circuit cell outputs 59a, 59b, and 59c of the vertical data processing circuit 19 do not change at a high level, and the voltages of the horizontal comparator circuit cell outputs 65a, 65b, and 65c of the horizontal data processing circuit 21 are 65a, 65b, The vertical signal determination processing circuit 61, the horizontal signal determination processing circuit 67, and the output processing circuit 23 perform determination processing in order of 65c or in the order of 65c, 65b, 65a from high level to low level and high level. It is possible to determine whether a rectangular object that is long in the vertical direction is moving from left to right or from right to left over time.
[0110]
Next, a description will be given with reference to FIGS. 7a and 7b. FIG. 7 a shows a state in which a rectangular object that is long in the horizontal direction has moved from the top to the bottom on the photoelectric conversion cell array 13. A black shadow is formed in the horizontal direction on the photoelectric conversion cell array 13, and this shadow moves from top to bottom.
[0111]
FIG. 7b shows the voltage change of the vertical signal lines 49a, 49b, 49c and the horizontal signal line lines 51a, 51b, 51c when the rectangular object that is long in the horizontal direction moves on the photoelectric conversion cell array 13 from top to bottom. , The voltage changes of the vertical comparator circuit cell outputs 59a, 59b, 59c of the vertical data processing circuit 19, and the voltage changes of the horizontal comparator circuit cell outputs 65a, 65b, 65c of the horizontal data processing circuit 21 are shown. The horizontal axis indicates time.
[0112]
At time T1, the object is on the photoelectric conversion cells 31 (1,1), (1,2), (1,3), and at time T2, the object is on the photoelectric conversion cells 31 (2,1), (2,2). , (2, 3), and at time T3, the object is on the photoelectric conversion cells 31 (3, 1), (3, 2), (3, 3). Time T0 is a time when an object has not yet appeared on the photoelectric conversion cell array 13, and time T4 is a time when the object passes over the photoelectric conversion cell array 13.
[0113]
First, at time T0, a rectangular object that is long in the horizontal direction has not yet appeared on the photoelectric conversion cell array 13, and all the photoelectric conversion cells 31 of the photoelectric conversion cell array 13 are irradiated with light, so that each horizontal signal line 51a, The first amplifier MOS transistor 43 of each of the three photoelectric conversion cells 31 connected to 51b and 51c and the second amplifier MOS transistor 45 connected to each of the vertical signal lines 49a, 49b and 49c include No current flows, and the potential levels of the vertical signal lines 49a, 49b, and 49c and the horizontal signal lines 51a, 51b, and 51c become high levels that are close to the voltage value applied to the load reference voltage line 55. For this reason, the vertical comparator circuit cell outputs 59a, 59b, and 59c and the horizontal comparator circuit cell outputs 65a, 65b, and 65c are at a high level.
[0114]
A rectangular object that is long in the horizontal direction appears on the photoelectric conversion cell array 13 and moves to the two photoelectric conversion cells 31 connected to the horizontal signal lines 51a, 51b, and 51c in all of the movement from top to bottom with time. Is irradiated with light, and no light is irradiated onto one photoelectric conversion cell 31, so that the current value flowing through the first amplifier MOS transistor 43 of one photoelectric conversion cell 31 flows through each horizontal load circuit cell 57. The output voltage of each horizontal signal line 51a, 51b, 51c decreases little, and the voltage value is equal, and the voltage value does not change with time. Accordingly, the horizontal comparator circuit cell outputs 65a, 65b and 65c of the horizontal data processing circuit 21 remain at a high level in all the time when a rectangular object which is long in the horizontal direction moves on the photoelectric conversion cell array 13 from top to bottom.
[0115]
On the other hand, in the vertical signal lines 59a, 59b, 59c, a rectangular object that is long in the horizontal direction moves from top to bottom with time, so that at the time T1, the photoelectric conversion cells 31 (1,1), (1,2), (1 , 3) are shaded, and the total current value flowing through the first amplifier MOS transistors 43 of the three photoelectric conversion cells 31 is the photoelectric conversion cells 31 (1, 1), (1, 2). , (1, 3) flows through the vertical load circuit cell 53, the output voltage of the vertical signal line 49a is greatly reduced.
[0116]
The vertical comparator circuit output cell 59a of the vertical data processing circuit 19 is at a low level. However, the photoelectric conversion cells 31 (2, 1), (2, 2), (2, 3) and the photoelectric conversion cells 31 (3, 1), (3, 2), (3, 3) are irradiated with light. Each vertical connection connected to the photoelectric conversion cell 31 (2, 1), (2, 2), (2, 3) and the photoelectric conversion cell 31 (3, 1), (3, 2), (3, 3) Since almost no current flows through the load circuit cell 53, the potentials of the vertical signal line 49b and the vertical signal line 49c hardly decrease, and the vertical comparator circuit cell outputs 59b and 59c of the vertical data processing circuit 19 become high bell.
[0117]
As a result, at time T2, the vertical comparator circuit cell output 59b of the vertical data processing circuit 19 becomes low level, and the vertical comparator circuit cell outputs 59a and 59c become high bell. At time T3, the vertical comparator circuit cell output 59c of the vertical data processing circuit 19 becomes low level, and the vertical comparator circuit cell outputs 59b and 59c become high bell.
[0118]
As described above, when a rectangular object that is long in the horizontal direction moves from top to bottom with time, the vertical comparator circuit cell outputs 65a, 65b, and 65c of the horizontal data processing circuit 21 remain high, but do not change. The 19 vertical comparator circuit cell outputs 59a, 59b, and 59c change from high level to low level in order of 59a, 59b, and 59c, and also to high level.
[0119]
Further, when a rectangular object that is long in the horizontal direction moves from bottom to top with time, the horizontal comparator circuit cell output lines 65a, 65b, and 65c of the horizontal data processing circuit 21 remain at a high level, but do not change. The vertical comparator circuit cell outputs 59a, 59b, and 59c of the vertical data processing circuit 19 are changed from high level to 10 level in the order of 59c, 59b, and 59a and also to high level.
[0120]
The horizontal comparator circuit cell outputs 65a, 65b, 65c of the horizontal data processing circuit 21 do not change at a high level, and the voltages of the vertical comparator circuit cell outputs 59a, 59b, 59c of the vertical data processing circuit 19 are 59a, 59b, The vertical signal determination processing circuit 61, the horizontal signal determination processing circuit 67, and the output processing circuit 23 perform determination processing in order of 59 c or in the order of 59 c, 59 b, 59 a from high level to low level and high level. It is possible to determine whether a rectangular object that is long in the horizontal direction is moving from top to bottom or from bottom to top with time.
[0121]
In the above description, the elongated moving subject is described as moving in the left and right and up and down directions. However, the elongated moving subject is moved obliquely downward from the upper left to the lower right, and is moved obliquely upward from the lower right to the upper left. It is also possible to detect the moving direction based on the same principle as described above.
[0122]
In the above description, the elongated subject has been described for easy understanding of the operation principle. However, the shape of the subject can be detected by a square or a circle.
[0123]
In other words, in the present invention, a voltage waveform diagram in which voltage values continuously output to the vertical signal line 49 and the discussion horizontal signal line 51 are recorded in time series is converted into a voltage waveform indicating a specific movement pattern in advance. Compared with the reference pattern information combined with the waveform diagram, the moving direction of each object is identified.
[0124]
8 to 10 show specific examples in the case of identifying the shape of a specific object by the object imaging apparatus 11, and the principle is substantially the same as the above-described principle.
[0125]
That is, when an object having a shape as shown in FIGS. 8a to 10a is placed on the photoelectric conversion cell array 31 of the object imaging device 11, the photoelectric conversion cell 31 in a certain part of the object is irradiated with light. First, since the photoelectric conversion cell 31 corresponding to the part without the object is irradiated with light, as shown in FIGS. 8b to 10b, the total sum of the current values output from the respective photoelectric conversion cells is shown. Since the voltage waveforms in the vertical signal lines 49 and the horizontal signal lines 51 each show a unique pattern, the shape of the object can be determined by comparing the pattern with a reference pattern corresponding to the shape of each object stored in advance. It becomes possible to identify.
[0126]
Therefore, in the object imaging device 11 of the present invention, the image data is not acquired by selecting the photoelectric conversion cells constituting the photoelectric conversion element cell array one by one, but the data of all the photoelectric conversion cells are set in the horizontal direction. The conventional MOS can be read simultaneously and collectively in the vertical direction, and can be read continuously without resetting, accumulating and reading every frame. Since a horizontal drive circuit, a vertical drive circuit, an analog / digital conversion circuit, and a related storage circuit as in a solid-state solid-state imaging device are unnecessary, the circuit configuration can be simplified and reduced. Manufacturing costs can be greatly reduced.
[0127]
As an example of the driving method of the object imaging device 11 in the present invention, for example, in the object imaging device in the present invention described above, each of the individual imaging cells in the photoelectric conversion cell constituting the photoelectric conversion cell array. A constant voltage is applied to the control terminal in the I / V conversion control means, a reset signal is input to one reset terminal in the I / V conversion control means, and then the vertical data processing circuit In the horizontal data processing circuit, the vertical signal determination processing circuit in FIG. 1 stores the voltage value constantly output from each vertical data processing circuit cell connected to each vertical signal line in time series. The horizontal signal determination processing circuit stores the voltage value constantly output from the individual vertical data processing circuit cell connected to each vertical signal line as a voltage waveform in time series, The vertical signal line and the horizontal signal line obtained from each of the vertical signal determination processing circuit and the horizontal signal determination processing circuit are moved on the photoelectric conversion cell array from the voltage waveforms on the vertical signal line and the horizontal signal line. The operation is performed to identify the moving direction of the object to be measured or the shape of the object to be measured.
[0128]
【Effect of the invention】
As described above, since the present invention employs the above-described technical configuration, it does not require a scan processing circuit, an analog / digital conversion circuit, a sequential read / write circuit, and the like, and has a simple configuration. An object imaging device using a downsized photoelectric conversion cell array that can reliably and immediately determine the moving direction of a predetermined detected object or recognize the shape of the detected object, and a photoelectric conversion cell suitable for the object imaging device Is easily obtained.
[Brief description of the drawings]
FIG. 1 is a circuit diagram illustrating an example of a configuration of a photoelectric conversion cell according to the present invention.
FIG. 2 is a block diagram showing the configuration of a specific example of the object imaging apparatus according to the present invention.
FIG. 3 is a block diagram showing a detailed configuration of a specific example of the object imaging apparatus according to the present invention.
FIG. 4 is a timing diagram illustrating a method for driving an object imaging apparatus according to the present invention.
FIG. 5 is a diagram for explaining the photoelectric conversion cell characteristics of the MOS type solid-state imaging device used in the present invention.
FIG. 6 is a diagram for explaining a detection method when an object moves left and right in the object imaging apparatus of the present invention.
FIG. 7 is a diagram for explaining a detection method when an object moves up and down in the object imaging apparatus of the present invention.
FIG. 8 is a diagram illustrating a detection method when the shape of an object in the object imaging apparatus of the present invention is a square shape.
FIG. 9 is a diagram illustrating a detection method when the shape of an object in the object imaging apparatus of the present invention is a U-shape.
FIG. 10 is a diagram for explaining a detection method when the shape of an object in the object imaging apparatus of the present invention is an inverted U-shape.
FIG. 11 is a block circuit diagram of a conventional MOS type solid-state imaging device.
FIG. 12 is a diagram illustrating a photoelectric conversion cell configuration of a conventional MOS solid-state imaging device.
FIG. 13 is a timing diagram illustrating a method for driving a conventional MOS type solid-state imaging device.
FIG. 14 is a block diagram showing an example of an apparatus for comparing image data using a conventional MOS solid-state imaging device.
[Explanation of symbols]
11 Object imaging device
13 Photoelectric conversion cell array
15 Vertical load circuit array
17 Horizontal load circuit array
19 Vertical data processing circuit
21. Horizontal data processing circuit
23. Output processing circuit
25. Output signal terminal
27. Control circuit
31 Photoelectric conversion cell
33 Control means for I / V conversion
39 Photodiode
43 First amplifier control means
45 Second amplifier control means
49 Vertical signal line
51 Horizontal signal line
53, 57 Load circuit cell
61 Vertical signal determination processing circuit
62 Vertical data processing circuit cell
63 Horizontal data processing circuit cell
67 Horizontal signal determination processing circuit

Claims (3)

Each control terminal is connected to one photodiode and a first terminal of the photodiode, and each first output terminal is connected to a grounded second terminal in the photodiode, The second output terminal is connected to one of the vertical signal line and the horizontal signal line of the photoelectric conversion cell array, which are individually connected to different signal lines. A photoelectric conversion cell comprising I / V conversion control means connected to a first terminal, wherein the I / V conversion control means converts a photocurrent flowing through the photodiode into a logarithmic output characteristic. The second output terminal of the first amplifier control means is connected to either the vertical signal line or the horizontal signal line of the photoelectric conversion cell array. The second output terminal of the second amplifier control means is connected to either the horizontal signal line or the vertical signal line of the photoelectric conversion cell array, and is connected to the first and second amplifier control means. The same amount of current corresponding to the amount of light is simultaneously and constantly output from both of the second output terminals in response to the amount of light irradiated to the photodiode. A plurality of photoelectric conversion cells arranged in a matrix, a vertical load circuit array connected to the photoelectric conversion cell array, a horizontal load circuit array, a vertical data processing circuit, and a horizontal data processing And an output processing circuit connected to the vertical data processing circuit and the horizontal data processing circuit, the photoelectric conversion cell array, a vertical load circuit array, A flat load circuit array, Te at a vertical data processing circuit, a horizontal data processing circuit, an object imaging device and a control circuit connected to the output processing circuit,
In the photoelectric conversion cell, each second terminal in each first amplifier control means is commonly connected to the horizontal signal line for each column, and each second terminal in the second amplifier control means. Are connected in common to the vertical signal line for each row, and the control terminal in the I / V conversion control means and the reset terminal which is one of the output terminals are connected in common to all the photoelectric conversion cells. And
A vertical data processing circuit cell is provided at the other end of each vertical signal line, and a horizontal data processing circuit cell is provided at the other end of the respective horizontal signal line. In the circuit cell and each horizontal data processing circuit cell, each of the plurality of photoelectric conversion cells connected to the corresponding vertical signal line or horizontal signal line always corresponds to the total amount of light received at that time. It is configured to input voltage values,
The vertical data processing circuit includes a vertical signal determination processing circuit, the horizontal data processing circuit includes a horizontal signal determination processing circuit, and the vertical signal determination processing circuit and the horizontal signal determination processing circuit include a plurality of vertical data. The voltage waveform output from each cell of the processing circuit cell or each of the plurality of horizontal data processing circuit cells is configured to be recorded in time series,
The output processing circuit records the voltage waveform profile constantly output from the vertical signal determination processing circuit and the horizontal signal determination processing circuit in time series, and stores the result in a predetermined moving direction or a predetermined shape in advance. An object imaging apparatus configured to recognize a moving direction or a shape of the target object by comparing with reference information and to output the identification information . The At one end of each of the vertical signal line and horizontal signal line, the load circuit cell having the I / V conversion function is provided by the load circuit cell, the vertical load circuit array and the horizontal load circuit array The object imaging device according to claim 1 , wherein: is formed. In the object imaging device according to claim 1 or 2 , a constant voltage is applied to a control terminal in each of the I / V conversion control means in the photoelectric conversion cell constituting the photoelectric conversion cell array. In addition, the reset signal is input to the reset terminal which is one of the output terminals in the I / V conversion control means, and then the vertical signal determination processing circuit in the vertical data processing circuit A voltage value constantly output from the individual vertical data processing circuit cell connected to the signal line is stored in time series, and a horizontal signal determination processing circuit in the horizontal data processing circuit is connected to each horizontal signal line. chronologically it is stored as a voltage waveform voltage output at all times from the individual horizontal data processing circuit cells connected to, then the output processing circuit, the vertical signal determination processing Of the object to be measured moved on the photoelectric conversion cell array or existing on the photoelectric conversion cell array from the voltage waveforms on the vertical signal line and the horizontal signal line obtained from the path and the horizontal signal determination processing circuit, respectively. A method for driving an object imaging apparatus, characterized by being configured to identify a moving direction or a shape of an object to be measured.

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