JP4995559B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP4995559B2 JP4995559B2 JP2006344292A JP2006344292A JP4995559B2 JP 4995559 B2 JP4995559 B2 JP 4995559B2 JP 2006344292 A JP2006344292 A JP 2006344292A JP 2006344292 A JP2006344292 A JP 2006344292A JP 4995559 B2 JP4995559 B2 JP 4995559B2
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- light emitting
- emitting device
- light
- emitting element
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- 238000000034 method Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 16
- 230000000694 effects Effects 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 12
- 238000000407 epitaxy Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
10 ランド
11 発光素子
12 補正素子
13 基板
14 導電線路
100、101 導電体
110 発光ダイオード
Claims (16)
- 発光装置であって、
電源に接続されるための2つの導電体が設けられたランドと、
前記ランドに載置され、前記2つの導電体と電気的に接続され、且つ、この2つの導電体が電源に接続された後に光源を提供するための発光素子と、
前記発光素子と電気的に接続され、前記発光素子が電源に接続された後に、前記発光素子に温度補償の効果を提供するための補正素子と、を含み、
前記発光素子は、単向直流型ダイオードを逆向きに並列接続してなる交流型発光ダイオード(AC LED)を複数直列接続したものであることを特徴とする発光装置。 - 前記ランドは、搭載部材からなることを特徴とする請求項1に記載の発光装置。
- 前記2つの導電体は、リードフレームにより形成されることを特徴とする請求項1に記載の発光装置。
- 前記発光素子は、単一の波長を有することを特徴とする請求項1に記載の発光装置。
- 前記発光素子は、少なくとも2つの波長を有することを特徴とする請求項1に記載の発光装置。
- 前記発光素子が電源が投入された後に提供する光源は、可視光であることを特徴とする請求項1に記載の発光装置。
- 前記発光素子が電源が投入された後に提供する光源は、不可視光であることを特徴とする請求項1に記載の発光装置。
- 前記補正素子は、前記発光素子と電気的に直列に接続されることを特徴とする請求項1に記載の発光装置。
- 前記補正素子は、前記発光素子と電気的に並列に接続されることを特徴とする請求項1に記載の発光装置。
- 前記温度補償素子は、正の温度係数を有する抵抗補償素子からなることを特徴とする請求項1に記載の発光装置。
- 前記温度補償素子は、負の温度係数を有する抵抗補償素子からなることを特徴とする請求項1に記載の発光装置。
- 前記補正素子は、特定の方法により前記発光素子と電気的に接続され、前記特定の方法はまず、前記補正素子が基板に接合され、次に前記発光素子と一体的に実装されることを特徴とする請求項1に記載の発光装置。
- 前記補正素子は、特定の方法により前記発光素子と電気的に接続され、前記特定の方法はまず、前記補正素子が基板に製作され、次に前記発光素子と一体的に実装されることを特徴とする請求項1に記載の発光装置。
- 前記補正素子は、特定の方法により前記発光素子と電気的に接続され、前記特定の方法はまず、前記補正素子が基板の導電線路上に形成され、次に前記発光素子と一体的に実装されることを特徴とする請求項1に記載の発光装置。
- 前記補正素子は、特定の方法により前記発光素子と電気的に接続され、前記特定の方法はまず、前記補正素子がエピタキシー法により前記発光素子の上に設置され、次に一体的に実装されることを特徴とする請求項1に記載の発光装置。
- 前記補正素子は、特定の方法により前記発光素子と電気的に接続され、前記特定の方法はまず、前記補正素子がエピタキシー法により前記発光素子に載置され、次に基板に載置されて一体的に実装されることを特徴とする請求項1に記載の発光装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200510135136.4 | 2005-12-23 | ||
CN200510135136 | 2005-12-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007173830A JP2007173830A (ja) | 2007-07-05 |
JP4995559B2 true JP4995559B2 (ja) | 2012-08-08 |
Family
ID=38219865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006344292A Active JP4995559B2 (ja) | 2005-12-23 | 2006-12-21 | 発光装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4995559B2 (ja) |
KR (2) | KR20070066999A (ja) |
DE (1) | DE102006061168A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101522999B1 (ko) * | 2008-03-27 | 2015-05-27 | 서울반도체 주식회사 | 릴레이형 발광장치 |
TWM374153U (en) | 2009-03-19 | 2010-02-11 | Intematix Technology Ct Corp | Light emitting device applied to AC drive |
KR101689396B1 (ko) * | 2010-07-07 | 2016-12-23 | 서울반도체 주식회사 | 발광 소자 |
DE102011114253A1 (de) * | 2011-09-26 | 2013-03-28 | e:lumix OptoSemi Industries Verwaltungs GmbH | Leuchtvorrichtung |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62299092A (ja) * | 1986-06-18 | 1987-12-26 | Fujitsu Ltd | 発光ダイオ−ド |
JP3705637B2 (ja) * | 1995-11-21 | 2005-10-12 | 豊田合成株式会社 | 3族窒化物半導体発光素子及びその製造方法 |
JPH10321915A (ja) * | 1997-05-15 | 1998-12-04 | Rohm Co Ltd | 半導体発光素子 |
JP2002335012A (ja) * | 1999-02-25 | 2002-11-22 | Nichia Chem Ind Ltd | 発光ダイオード及びそれを用いたドットマトリックスディスプレイ |
JP3613328B2 (ja) * | 2000-06-26 | 2005-01-26 | サンケン電気株式会社 | 半導体発光装置 |
JP2002064224A (ja) * | 2000-08-18 | 2002-02-28 | Agilent Technologies Japan Ltd | 発光ダイオード及びその製造方法 |
JP3771144B2 (ja) * | 2001-06-27 | 2006-04-26 | 豊田合成株式会社 | Ledランプ |
TW535307B (en) * | 2002-03-04 | 2003-06-01 | United Epitaxy Co Ltd | Package of light emitting diode with protective diode |
-
2006
- 2006-12-21 JP JP2006344292A patent/JP4995559B2/ja active Active
- 2006-12-22 DE DE102006061168A patent/DE102006061168A1/de not_active Ceased
- 2006-12-26 KR KR1020060133771A patent/KR20070066999A/ko active Search and Examination
-
2009
- 2009-11-26 KR KR1020090115445A patent/KR20090127397A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JP2007173830A (ja) | 2007-07-05 |
KR20070066999A (ko) | 2007-06-27 |
KR20090127397A (ko) | 2009-12-11 |
DE102006061168A1 (de) | 2007-07-26 |
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