JP4964444B2 - Manufacturing method of display element - Google Patents

Description

  The present invention relates to a method for manufacturing a display element, and more particularly, to a method for manufacturing a display element in which a display element substrate is divided from a mother substrate.

In recent years, display devices such as liquid crystal display devices have been incorporated into many electronic devices such as mobile phones, portable information terminals, electronic notebooks, and portable televisions.
There are various types of liquid crystal display devices, and TN (Twisted Nematic) mode and STN (Super Twisted Nematic) mode are known as operation modes, and simple matrix method and active matrix method are known as driving methods. .
A general TFT (Thin Film Transistor) liquid crystal display device has the advantage of being able to see a light, thin and clean screen for a long time with the TN mode operating mode and the active matrix type driving method. Installed in equipment.

Such a TFT liquid crystal display device has a counter substrate in which electrodes are formed on the entire inner surface, and an inner surface in which TFT elements and pixel electrodes are arranged in a matrix for each pixel. The liquid crystal is sandwiched between the TFT array substrate provided (see, for example, Patent Document 1).
During manufacture of the TFT array substrate, static electricity may be accumulated in the TFT array substrate due to friction or the like. For example, a discharge occurs when a potential difference of static electricity accumulated between electrode wirings stacked with an insulating layer interposed therebetween, such as an electrode wiring connected to a TFT element, exceeds the dielectric strength voltage of the insulator. Due to this discharge, the insulating layer between the electrode wirings is electrostatically broken, and as a result, a problem of display defects has occurred.

Conventionally, in order to prevent this electrostatic breakdown, a technique is known in which a conductor pattern called a short ring is formed on the outer peripheral edge of a TFT array substrate to short-circuit between electrode wirings (see, for example, Patent Document 2). . This short ring is arranged on the outer peripheral edge of the TFT array substrate. After the TFT array substrate is cut along the outer peripheral line after the display panel is assembled, the outer peripheral corner of the TFT array substrate is removed with a file or the like. It was divided from each electrode wiring by shaving.
JP-A-6-110058 (FIG. 5, paragraph 0003) JP-A-8-234227 (FIG. 8)

  However, when chamfering a corner of the outer periphery of the TFT array substrate with a file or the like, static electricity is generated in the TFT array substrate due to friction of the file or the like, and the TFT element is electrostatically destroyed. was there. In addition, the number of work steps and the work time are increased, and there is a problem that the liquid crystal display element cannot be manufactured efficiently. In addition, when chamfering, it is necessary to manage dimensions while cutting with a file or the like, and there is a problem that much work is required.

  The present invention has been made in view of such a problem, and an object of the present invention is to provide a display element manufacturing method capable of simply and efficiently manufacturing a display element while limiting electrostatic breakdown of a switch element or the like. To do.

A method for manufacturing a display element according to the present invention includes:
A method of manufacturing a display element by dividing a plurality of display element substrates from a mother substrate to produce a plurality of display elements,
Forming a plurality of pixel electrodes and a plurality of switch elements corresponding to each of the plurality of pixel electrodes in a matrix in a plurality of display element formation regions on the mother substrate,
Extending a plurality of gate electrode lines and a plurality of source electrode lines connected to the plurality of switch elements to one side of the display element formation region between the plurality of pixel electrodes;
Between the first display element formation region of the plurality of display element formation regions and the second display element formation region adjacent to the one side of the first display element formation region, the first display element formation region Forming a connection wiring for connecting the plurality of gate electrode wirings and the plurality of source electrode wirings extending from the display element formation region to each other;
Separating the display element substrate from the mother substrate along the outer peripheral edge of each of the plurality of display element formation regions,
When the display element substrate is divided from the mother substrate, the first display element substrate including the first display element formation region and the second display element substrate including the second display element formation region are divided. By doing so, each of the plurality of gate electrode wirings and the plurality of source electrode wirings extended from the first display element formation region is separated from the connection wiring ,
When the connection wiring is formed, the connection wiring is arranged outside the second display element formation region of the second display element substrate .

  By adopting such a method, a display element can be simply and efficiently manufactured while limiting electrostatic breakdown of a switch element or the like.

In the display element manufacturing method according to the present invention, it is preferable that a plurality of gate electrode wirings and a plurality of source electrode wirings are connected to terminals, and the terminals and connection wirings are connected via auxiliary wirings.
The display element substrate has a rectangular shape, and a plurality of display element substrates are preferably formed in an array on the mother substrate .

  In addition, the step of forming the counter substrate on which the common electrode is formed, and the common electrode is formed on the surface of the mother substrate on which the plurality of pixel electrodes and the switch elements are formed before the display element substrate is separated from the mother substrate. The method may further include a step of bonding the mother substrate and the counter substrate with an adhesive material along the outer peripheral edge of the region in which the plurality of pixel electrodes and the switch elements are formed with the opposite surfaces facing each other.

  As a result, even when the counter substrate is mounted facing the mother substrate, a display element can be simply and efficiently manufactured while limiting electrostatic breakdown of the switch element and the like.

  According to the present invention, a display element can be simply and efficiently manufactured while limiting electrostatic breakdown of a switch element or the like.

First, the configuration of the TFT liquid crystal display element 1 will be described with reference to the drawings.
1A and 1B are schematic views showing the configuration of a TFT liquid crystal display element. FIG. 1A is a front view of the TFT liquid crystal display element, and FIG. 1B is a side view. FIG. 2 is a schematic diagram showing a cross section of the TFT liquid crystal display element, and particularly an enlarged cross section taken along the line AA of FIG.
1 and 2, the TFT liquid crystal display element 1 is configured by a TFT array substrate 10 and a counter substrate 20 facing each other.

  As shown in FIG. 1A, FIG. 1B, and FIG. 2, the TFT array substrate 10 includes an inner surface of a transparent substrate 11 that is formed in a rectangular shape using, for example, light-transmitting glass, polycarbonate, acrylic resin, or the like. The pixel electrode 12 and the TFT element 13 are formed for each pixel provided in a matrix in the display area 1a, and an alignment film (not shown) is further formed on the pixel electrode 12 and the TFT element 13. Has been. The pixel electrode 12 is made of, for example, ITO (Indium Tin Oxide). Further, as shown in FIGS. 1A, 1B, and 2, a mounting portion 10a is provided on one side of the TFT array substrate 10.

The counter substrate 20 is formed by laminating a color filter (not shown), a common electrode 22, an alignment film (not shown), etc. on the inner surface of a transparent substrate 21 formed in a rectangular shape using, for example, light transmissive glass, polycarbonate, acrylic resin or the like. It is comprised by forming.
As shown in FIG. 2, the common electrode 22 is formed on the entire region including the region corresponding to the pixel electrode 12 and the TFT element 13. The common electrode 22 is made of, for example, ITO (Indium Tin Oxide). R (Red: red), G (Green: green), and B (Blue: blue) of a color filter (not shown) are formed for each pixel provided in a matrix in the display area 1a.

  As shown in FIG. 1A and FIG. 2, the TFT array substrate 10 and the counter substrate 20 are joined by a sealing material 30 provided along the outer peripheral edge of the display region 1a, and the liquid crystal 50 is injected. After that, the liquid crystal injection port 60 is sealed by the sealing portion 70. Further, as shown in FIG. 2, spacers 40 for adjusting the gap between the TFT array substrate 10 and the counter substrate 20 are scattered over the entire surface between the TFT array substrate 10 and the counter substrate 20. An optical film such as a polarizing plate (not shown) is attached to the outer surfaces of the transparent substrates 11 and 21.

  As shown in FIG. 2, the TFT element 13 surrounded by the alternate long and short dash line includes a gate electrode 13b as a scanning electrode, a source electrode 13c as a signal electrode, and a drain electrode 13d on a thin film semiconductor 13a such as an amorphous silicon transistor. This is a three-terminal switch. The gate electrode 13b is connected to a gate electrode wiring (not shown) as a scanning signal wiring formed between the plurality of pixel electrodes 12, and the source electrode 13c is a source electrode wiring (not shown) as a data signal wiring. It is connected to the. Note that the gate electrode wiring and the source electrode wiring are formed so as to cross each other between the plurality of pixel electrodes 12. The drain electrode 13d is connected to the pixel electrode 12. Further, as shown in FIG. 2, an insulating layer 13e is formed between the thin film semiconductor 13a and the gate electrode 13b.

  When a voltage is applied to the gate electrode 13b, electrons pass through the thin film semiconductor 13a from the source electrode 13c to the drain electrode 13d or vice versa, and a current flows. Further, when an off voltage is applied to the gate electrode 13b, the source electrode 13c and the drain electrode 13d are disconnected.

  In this manner, the TFT element 13 is turned on or off by the gate electrode 13b, and a driving voltage is applied to the liquid crystal 50 between the pixel electrode 12 and the common electrode 22. When the voltage to the gate electrode 13b is set to 0V, the TFT element 13 is turned off, and the voltage applied between the liquid crystal molecules and the pixel electrode 12 and the counter electrode 22 facing the pixel electrode 12 is held.

  As described above, the TFT element 13 functions as a switch and can be turned on / off for each pixel electrode 12. The TFT element 13 is turned on according to a signal from the drive circuit 14, and the drive circuit 14 applies a drive voltage to a specific pixel electrode 12 to change the arrangement of the liquid crystal 50 between the pixel electrode 12 and the common electrode 22. The light transmission of the TFT liquid crystal display device 1 is controlled.

Next, the structure of the mother substrate for manufacturing the TFT array substrate will be described with reference to the drawings. FIG. 3 is a diagram schematically showing a plane of a mother substrate for producing a TFT array substrate. FIG. 4 is an enlarged view schematically showing a configuration around the terminal 14 of the mother board.
As shown in FIG. 3, a plurality of TFT array substrates 10 are arranged and formed in a mother substrate 100 for the TFT array substrate 10 so as to be divided by dotted lines a to d. As shown in FIG. 3, the outer shape of the TFT array substrate 10 corresponds to a region surrounded by dotted lines a to d, and is indicated by a thick dotted line.

  As shown in FIG. 3, a liquid crystal display element formation region M surrounded by a dotted line is provided in the outer shape of the TFT array substrate 10, and the pixel electrode 12, TFT element 13 and terminal shown in FIG. 14 and the like are formed in a matrix in each liquid crystal display element formation region M and in a region corresponding to the display region 1a. As described above, the plurality of pixel electrodes 12 are formed of, for example, ITO (Indium Tin Oxide). In FIG. 3, the pixel electrode 12 and the TFT element 13 are omitted.

  As shown in FIG. 4, a plurality of gate electrode wirings 16 and source electrode wirings 17 connected to the plurality of switch elements 13 are formed between the plurality of pixel electrodes 12. The plurality of gate electrode wirings 16 and source electrode wirings 17 are formed of a metal such as Cr, Mo—Ta, Ta, or Al, for example. Each gate electrode wiring 16 as the scanning signal wiring is connected to the gate electrode 13 b of the TFT element 13. A source electrode wiring 17 as a data signal wiring is connected to the source electrode 13 c of the TFT element 13. Each gate electrode wiring 16 and each source electrode wiring 17 are arranged so as to intersect each other, and an insulating layer (not shown) is provided at the intersection of both the wirings 16 and 17.

  As shown in FIG. 4, the plurality of gate electrode wirings 16 and the source electrode wirings 17 extend to one side of the TFT array substrate 10, and the plurality of gate electrode wirings 16 are connected via auxiliary wirings 18a. Connected to the plurality of terminals 14, the plurality of source electrode wirings 17 are directly connected to the plurality of terminals 14. In addition, as shown in FIG. 4, each of the plurality of terminals 14 is connected to the connection wiring 19 via the auxiliary wiring 18b. The plurality of terminals 14, connection wirings 19, and auxiliary wirings 18 a and 18 b are made of a metal such as Cr, Mo—Ta, Ta, or Al. The connection wiring 19 is formed outside the liquid crystal display element formation region M and between the adjacent liquid crystal display element formation regions M.

  In this way, each of the plurality of gate electrode wirings 16 and source electrode wirings 17 is electrically connected to the connection wiring 19 via the terminal 14 and the auxiliary wirings 18a and 18b. By forming the connection wiring 19, the potential between the gate electrode wirings 16 and between the source electrode wirings 17 becomes the same potential, and between the TFT elements 13 to which the gate electrode wiring 16 and the source electrode wiring 17 are connected and between the TFT elements 13. The same potential is also applied between the electrodes. As a result, electrostatic breakdown of the TFT element 12 and the like due to friction of the TFT array substrate 10 is limited during the manufacturing operation.

Next, a method for manufacturing a liquid crystal display element according to an embodiment of the present invention will be described with reference to the drawings. FIG. 5 is a diagram showing a flow of a manufacturing method of the liquid crystal display element according to the embodiment of the present invention.
As shown in FIGS. 5 and 4, first, a mother substrate 100 for a rectangular TFT array substrate 10 is formed of a rectangular flat plate such as a light-transmitting glass (step (STEP: hereinafter referred to as ST)). 301).

Next, the pixel electrodes 12 and the TFT elements 13 are formed in a matrix in the liquid crystal display element formation region M on the mother substrate 100 for the TFT array substrate 10 and in the display region 1a (ST302). The pixel electrode 12 is made of ITO or the like. Each electrode of the TFT element 13 used is a metal such as Cr or Mo-Ta or Ta and Al, such as SiO ₂ and _Ta 2 _{O 5, Al} 2 _{O 3,} or _the is used for the insulating layer 13e, the thin film semiconductor a-Si or the like is used. A plurality of gate electrode wirings 16 and source electrode wirings 17 are formed between the plurality of pixel electrodes 12 with a metal such as Cr, Mo-Ta, Ta, or Al (ST303). Further, the connection wiring 19, the auxiliary wirings 18 a and 18 b, and the terminals 14 are formed of a metal such as Cr, Mo—Ta, Ta, and Al on one side of the rectangular liquid crystal display element formation region M (ST 304).

  Here, the steps ST302 to ST304 are not individually performed. In the steps ST302 to ST304, the pixel electrode 12, the TFT element 13, the terminal 14, the gate electrode wiring 16, the source electrode wiring 17, the auxiliary wiring 18a, Depending on the laminated structure such as 18b, connection wiring 19 and the like, for example, by performing various thin film formation by sputtering, photo-resist application, pattern exposure, development, etching, and photo-resist stripping several times by photolithography. Form all of the.

  Next, an alignment film (not shown) is formed on the mother substrate 100 for the TFT array substrate 10 with an organic thin film such as a polyimide thin film made of a polymer material (ST305). The alignment film is then subjected to an alignment process (rubbing process) for making micro scratches in one direction on the contact surface with the liquid crystal 50 (ST305). Next, spacers 40 are uniformly dispersed on the surface of the mother substrate 100 for the TFT array substrate 10 on which the pixel electrodes 12 and the like are formed (ST306). The spacers 40 may be scattered on the surface of the counter substrate 20 on which the common electrode 22 is formed.

  Next, the sealing material 30 is applied along the outer periphery of the display region 1a of the mother substrate 100 for the TFT array substrate 10 except for a portion that becomes the liquid crystal injection port 60 (ST307). It should be noted that the sealing material 30 can be applied to a position corresponding to the outer periphery of the display region 1a on the mother substrate (not shown) of the counter substrate 20 except for a part of the liquid crystal injection port 60. Here, in the display region 1a of the mother substrate 100 for the TFT array substrate 10, a plurality of pixel electrodes 12 and TFT elements 13 are formed in a matrix.

  Next, a mother substrate (not shown) for the counter substrate 20 is formed of a rectangular flat plate such as a light transmissive glass (ST308). Then, a color filter is formed on the inner surface of the mother substrate for the counter substrate 20 with a pigment or the like using a photolithography method or the like (ST309). Next, the common electrode 22 is formed of, for example, ITO on the entire inner surface of the mother substrate for the counter substrate 20 (ST310).

Next, an alignment film (not shown) is formed on the inner surface of the mother substrate for the counter substrate 20 with, for example, an organic thin film such as a polyimide thin film that is a polymer material (ST311). Then, an alignment process (rubbing process) is performed to make micro scratches in one direction on the contact surface with the liquid crystal 50 (ST311).
Then, the mother substrate 100 for the TFT array substrate and the mother substrate for the counter substrate 20 are arranged such that the surface on which the pixel electrode 12 and the like are formed and the surface on which the common electrode 22 is formed are opposed to each other. 12 and the outer peripheral edge of the region in which the TFT elements 13 are formed in a matrix are bonded together by a sealing material 30 to join the mother substrate 100 for the TFT array substrate 10 and the mother substrate for the counter substrate 20 (ST312). .

  Next, the mother substrate 100 of the TFT array substrate 10 and the mother substrate of the counter substrate 20 are separated along the dividing lines provided on the outer peripheral edge of the liquid crystal display element formation region M, that is, the dotted lines a to d shown in FIG. Divide (ST313). As a result, the liquid crystal panel into which the liquid crystal 50 has not been injected is separated from the mother substrate 100 for the TFT array substrate 10. At this time, the TFT array substrate 10 is separated from the mother substrate 100 for the TFT array substrate 10, and at the same time, each auxiliary wiring 18 b is divided, and each of the plurality of gate electrode wirings 16 and the plurality of source electrode wirings 17 and the connection wiring 19 Is divided. The division is performed by, for example, a scribe & break method.

  Next, liquid crystal 50 is injected into the closed space surrounded by the sealing material 30 between the TFT array substrate 10 and the counter substrate 20 (ST314). Then, the liquid crystal inlet 60 is sealed with the sealing material 70, and the sealing material 70 is cured to seal the liquid crystal 50 in the closed space (ST315). Then, an optical film such as a polarizing plate (not shown) is attached to the outer surfaces of the transparent substrates 11 and 21 to complete the TFT liquid crystal display element 1.

  By adopting such a method, when the TFT array substrate 10 is separated from the mother substrate 100 for the TFT array substrate 10, each of the plurality of gate electrode wirings 16 and the plurality of source electrode wirings 17, the connection wiring 19, Therefore, when chamfering the outer peripheral corners of the TFT array substrate 10 with a file or the like as in the prior art, static electricity may be generated in the TFT array substrate 10 due to friction such as a file. In addition, a display element can be simply and efficiently produced while limiting electrostatic breakdown of a switch element or the like. In addition, since it is not necessary to chamfer with a file or the like as in the prior art, it is possible to reduce the work man-hours and the work time, and furthermore, it is not necessary to manage the chamfer dimension in chamfering such as a file. .

  The above description is for explaining the embodiment of the present invention, and the present invention is not limited to the above embodiment. Moreover, those skilled in the art can easily change, add, and convert each element of the above embodiment within the scope of the present invention.

  In the description of the above embodiment, when each of the plurality of gate electrode wirings 16 and the source electrode wirings 17 is electrically connected to the connection wiring 19 and the TFT array substrate 10 is separated from the mother substrate, a plurality of gate electrode wirings are provided. 16 and the source electrode wiring 17 are separated from the connection wiring 19, but only each of the plurality of gate electrode wirings 16 or only each of the plurality of source electrode wirings 17 is electrically connected to the connection wiring 19. The present invention can also be applied to an aspect in which each of the plurality of gate electrode wirings 16 or the source electrode wirings 17 and the connection wiring 19 are divided when the TFT array substrate 10 is connected and divided from the mother substrate.

  In the description of the above embodiment, an active liquid crystal display device is used as an example. However, the present invention is not limited to this, and the invention according to this embodiment is not limited to an active organic EL (Electro Luminescence) display device. It can also be used for various types of display devices.

It is a schematic diagram which shows the structure of a TFT liquid crystal display device, Comprising: Fig.1 (a) is a front view of a TFT liquid crystal display device, FIG.1 (b) is a side view. It is a schematic diagram which shows the cross section of a TFT liquid crystal display device, and is a figure which shows the expanded cross section of the AA cutting line of Fig.1 (a) especially. It is a figure which shows typically the plane of the mother substrate for producing a TFT array substrate. It is an enlarged view which shows typically the structure around the terminal of a mother board | substrate. It is a figure which shows the flow of the manufacturing method of the liquid crystal display element which concerns on embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 TFT liquid crystal display element 10 TFT array substrate 10a Mounting part 11 Transparent substrate 12 Pixel electrode 13 TFT element 13a Thin film semiconductor 13b Gate electrode 13c Source electrode 13d Drain electrode 13e Insulating layer 14 Terminal 16 Gate electrode wiring 17 Source electrode wiring 18a, 18b Auxiliary Wiring 19 Connection wiring 20 Counter substrate 21 Transparent substrate 22 Common electrode 30 Sealing material 40 Spacer 50 Liquid crystal 60 Liquid crystal inlet 70 Sealing portion

Claims (4)

A method of manufacturing a display element by dividing a plurality of display element substrates from a mother substrate to produce a plurality of display elements,
Forming a plurality of pixel electrodes and a plurality of switch elements corresponding to each of the plurality of pixel electrodes in a matrix in a plurality of display element formation regions on the mother substrate,
Extending a plurality of gate electrode lines and a plurality of source electrode lines connected to the plurality of switch elements to one side of the display element formation region between the plurality of pixel electrodes;
Among the plurality of display element formation regions, at least the first display element formation region and the second display element formation region adjacent to the one side of the first display element formation region Forming a plurality of gate electrode wirings extending from one display element forming region and a plurality of source electrode wirings connecting to each other;
Separating the display element substrate from the mother substrate along the outer peripheral edge of each of the plurality of display element formation regions,
When the display element substrate is divided from the mother substrate, the first display element substrate including the first display element formation region and the second display element substrate including the second display element formation region are divided. By doing so, each of the plurality of gate electrode wirings and the plurality of source electrode wirings extended from the first display element formation region is separated from the connection wiring ,
A method for manufacturing a display element, wherein , when forming the connection wiring, the connection wiring is disposed outside the second display element formation region of the second display element substrate .   The method for manufacturing a display element according to claim 1, wherein the plurality of gate electrode wirings and the plurality of source electrode wirings are connected to terminals, and the terminals and the connection wirings are connected through auxiliary wirings.   The display element manufacturing method according to claim 1, wherein the display element substrate has a rectangular shape, and the plurality of display element substrates are arrayed on the mother substrate. Forming a counter substrate on which a common electrode is formed;
Before separating the display element substrate from the mother substrate, the surface on which the common electrode is formed is opposed to the surface on which the plurality of pixel electrodes and switch elements of the mother substrate are formed. 4. The method for manufacturing a display element according to claim 1, further comprising a step of bonding the counter substrate to the counter substrate with an adhesive material along an outer peripheral edge of a region where the plurality of pixel electrodes and switch elements are formed.

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