JP4958584B2 - Positive resist composition and pattern forming method using the same - Google Patents

Description

  The present invention relates to a positive resist composition suitably used in an ultramicrolithography process such as the manufacture of VLSI and high-capacity microchips and other photo-publishing processes. More specifically, the present invention relates to a positive type photoresist that can form a high-definition pattern using electron beam, X-ray, EUV light, etc., and uses electron beam, X-ray, EUV light (wavelength: around 13 nm). The present invention relates to a positive resist composition that can be suitably used for fine processing of semiconductor elements.

  Conventionally, in the manufacturing process of semiconductor devices such as IC and LSI, fine processing by lithography using a photoresist composition has been performed. In recent years, with the high integration of integrated circuits, the formation of ultrafine patterns in the submicron region and the quarter micron region has been required. Along with this, there is a tendency to shorten the exposure wavelength from g-line to i-line and further to KrF excimer laser light. Furthermore, at present, in addition to excimer laser light, lithography using electron beams, X-rays, or EUV light is also being developed.

In particular, electron beam lithography is positioned as a next-generation or next-generation pattern formation technique, and a positive resist with high sensitivity and high resolution is desired. In particular, high sensitivity is an extremely important issue for shortening the wafer processing time. However, in positive resists for electron beams, when trying to increase sensitivity, not only the resolution is lowered, but also the line edge. Roughness deteriorates, and development of a resist that satisfies these characteristics at the same time is strongly desired. Here, the line edge roughness means that when the pattern is viewed from directly above because the resist pattern and the edge of the substrate interface vary irregularly in the direction perpendicular to the line direction due to the characteristics of the resist. Say that the edge looks uneven. The unevenness is transferred by an etching process using a resist as a mask, and the electrical characteristics are deteriorated, so that the yield is lowered. Especially 0.2
In the ultrafine region of 5 μm or less, line edge roughness is an extremely important improvement issue. High sensitivity, high resolution, good pattern shape, and good line edge roughness are in a trade-off relationship, and it is very important how to satisfy them simultaneously. In addition, image performance stability (PED in vacuum) during pulling after exposure in vacuum is a very important performance when performing exposure in a vacuum such as electron beam, X-ray, EUV light. If the medium PED characteristic is poor, the performance changes greatly between the initial stage of drawing and the end of drawing when drawing with an electron beam or X-ray, and as a result, the in-plane uniformity of the drawn pattern varies greatly, resulting in a significant decrease in yield. Will cause.

  Further, the above-mentioned line edge roughness also has a problem that it is deteriorated by holding in a vacuum.

  Further, when EUV is used as a light source, the wavelength of light belongs to the extreme ultraviolet region and has high energy, so there is a problem such as a decrease in contrast due to concerted photochemical reactions such as negativity caused by EUV light. Similarly, in lithography using lines and EUV light, it is important to achieve both high sensitivity and high resolution, and these solutions are necessary.

  As a resist suitable for a lithography process using such electron beam, X-ray or EUV light, a chemically amplified resist using an acid catalyst reaction is mainly used from the viewpoint of high sensitivity. As a main component, a phenolic polymer (hereinafter abbreviated as a phenolic acid-decomposable resin) that is insoluble or hardly soluble in an alkali developer and becomes soluble in an alkali developer by the action of an acid, and an acid generator A chemically amplified resist composition comprising:

  Several resist compositions containing phenolic acid-decomposable resins have been known so far for positive resists for these electron beams, X-rays or EUV (see, for example, Patent Documents 1 to 6).

  However, in any combination of these, the current situation is that high sensitivity, high resolution, good pattern shape, and good line edge roughness are not satisfied at the same time in the ultrafine region.

  When EUV light is used as a light source, the wavelength of the light belongs to the extreme ultraviolet region and has high energy, and thus there has been a problem with respect to a decrease in contrast due to concerted photochemical reactions such as negation due to EUV light. Furthermore, unlike conventional light sources, when high-energy rays such as EUV light are irradiated, the compounds in the resist film are destroyed by fragmentation, volatilizing as low-molecular components during exposure, and contaminating the environment in the exposure machine. Outgassing problems become significant. Various studies have been conducted on the reduction of outgas. A radical trap that suppresses the volatilization of a low-molecular compound by providing a topcoat layer (see, for example, Patent Documents 7 and 8) or the decomposition of a polymer. Various attempts have been made, such as adding an agent (see, for example, Patent Document 9), and an contrivance for reducing outgas is also desired for the acid generator.

JP 2002-323768 A JP-A-6-41221 Japanese Patent No. 3173368 JP 2000-122291 A JP 2001-114825 A JP 2001-206917 A JP 2002-55457 A European Patent No. 1480078 specification US Pat. No. 6,680,157

  An object of the present invention is to solve the problem of performance improvement technology in microfabrication of a semiconductor device using high energy rays, X-rays, electron beams or EUV light, and has high sensitivity, high resolution, and good pattern. An object of the present invention is to provide a positive resist composition that satisfies the shape and good line edge roughness at the same time. Furthermore, the present invention provides a positive resist composition having a good contrast under exposure by EUV light and having no problem of outgas during exposure, and a pattern forming method using the same.

Ｘは水素原子又は有機基を表す。
Ｙは水素原子又は有機基を表す。
Ｚは非酸分解性基を表す。
Ｒａ、Ｒｂ、Ｒｃ及びＲｄは、各々独立して、水素原子、アルキル基、水酸基、アルコキシ基、ハロゲン原子、シアノ基、ニトロ基、アシル基、アシロキシ基、シクロアルキル基、アリール基、カルボキシル基、アルキルオキシカルボニル基、アルキルカルボニルオキシ基又はアラルキル基を表す。
ｍは１〜４の整数、ｎは１〜４の整数、ｋは０〜３の整数であり、２≦ｍ＋ｎ＋ｋ≦５である。
ｍが２〜４のとき、複数のＸは、同じでも異なっていても良く、ｎが２〜４のとき、複数のＹ、Ｒｃ、Ｒｄは、それぞれ同じでも異なっていても良い。
ｎ１は０〜１０の整数を表す。

一般式（ＩＩ）中、
Ｒ^１〜Ｒ^１３は、各々独立に水素原子又は置換基を表し、互いに結合して環を形成してもよい。
Ｚは単結合または２価の連結基である。
＜２＞
一般式（Ｉ）で示される繰り返し単位が、式（Ｉａ）で示される繰り返し単位であることを特徴とする上記＜１＞に記載のポジ型レジスト組成物。

Ｘは水素原子又は有機基を表す。
Ｙは水素原子又は有機基を表す。
Ｚは非酸分解性基を表す。
Ｒａ、Ｒｂ、Ｒｃ及びＲｄは、各々独立して、水素原子、アルキル基、水酸基、アルコキシ基、ハロゲン原子、シアノ基、ニトロ基、アシル基、アシロキシ基、シクロアルキル基、アリール基、カルボキシル基、アルキルオキシカルボニル基、アルキルカルボニルオキシ基又はアラルキル基を表す。
ｎは１〜４の整数、ｋは０〜３の整数であり、１≦ｎ＋ｋ≦４である。
ｎが２〜４のとき、複数のＹ、Ｒｃ、Ｒｄは、それぞれ同じでも異なっていても良い。
ｎ１は０〜１０の整数を表す。
＜３＞
一般式（Ｉ）で示される繰り返し単位が式（Ｉｂ）で示される繰り返し単位であることを特徴とする上記＜１＞に記載のポジ型レジスト組成物。

Ｘは水素原子又は有機基を表す。
Ｙは水素原子又は有機基を表す。
Ｚは非酸分解性基を表す。
Ｒａ、Ｒｂ、Ｒｃ及びＲｄは、各々独立して、水素原子、アルキル基、水酸基、アルコキシ基、ハロゲン原子、シアノ基、ニトロ基、アシル基、アシロキシ基、シクロアルキル基、アリール基、カルボキシル基、アルキルオキシカルボニル基、アルキルカルボニルオキシ基又はアラルキル基を表す。
ｋは０〜３の整数である。
ｎ１は０〜１０の整数を表す。
＜４＞
（Ａ）成分の樹脂の重量平均分子量（Ｍｗ）が、１，０００〜６，０００の範囲であることを特徴とする上記＜１＞〜＜３＞のいずれか一項に記載のポジ型レジスト組成物。
＜５＞
（Ａ）成分の樹脂の重量平均分子量（Ｍｗ）が、１，０００〜４，０００の範囲であることを特徴とする上記＜１＞〜＜３＞のいずれか一項に記載のポジ型レジスト組成物。
＜６＞
一般式（ＩＩ）で表される化合物が活性光線または放射線の照射により酸を発生する際に生成する分解物に相当する、下記一般式（Ｋ）で表される化合物（一般式（Ｋ）におけるＲ^９〜Ｒ^１３は、一般式（ＩＩ）で表される化合物におけるＲ^９〜Ｒ^１３と同一である。）の１気圧における沸点が１６０℃以上である特徴とする上記＜１＞〜＜５＞のいずれか一項に記載のポジ型レジスト組成物。

＜７＞
上記＜１＞〜＜６＞のいずれか一項に記載のポジ型レジスト組成物により形成されたレジスト膜。
＜８＞
上記＜７＞に記載のレジスト膜を露光、現像することを特徴とするパターン形成方法。
＜９＞
露光を電子線又はＥＵＶを照射することで行うことを特徴とする上記＜８＞に記載のパターン形成方法。
本発明は、上記＜１＞〜＜９＞のいずれかに記載の発明であるが、以下、他の事項も含めて記載している。 As a result of intensive studies, the present inventors have achieved the object of the present invention by the following configuration.
<1>
(A) It contains at least the repeating unit represented by formula (I), is insoluble or hardly soluble in an alkali developer, has a property of being soluble in an alkali developer by the action of an acid, and has a weight average molecular weight (Mw ) Is in the range of 1,000 to 8,000,
(B) A positive resist composition comprising a sulfonium compound which generates an acid upon irradiation with actinic rays or radiation and has a cation represented by formula (II).

X represents a hydrogen atom or an organic group.
Y represents a hydrogen atom or an organic group.
Z represents a non-acid-decomposable group.
Ra, Rb, Rc and Rd are each independently a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, Represents an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group;
m is an integer of 1 to 4, n is an integer of 1 to 4, k is an integer of 0 to 3, and 2 ≦ m + n + k ≦ 5.
When m is 2 to 4, the plurality of X may be the same or different, and when n is 2 to 4, the plurality of Y, Rc, and Rd may be the same or different.
n1 represents an integer of 0 to 10.

In general formula (II),
R ^{1 to} R ¹³ each independently represent a hydrogen atom or a substituent, and may be bonded to each other to form a ring.
Z is a single bond or a divalent linking group.
<2>
The positive resist composition as described in <1> above, wherein the repeating unit represented by the general formula (I) is a repeating unit represented by the formula (Ia).

X represents a hydrogen atom or an organic group.
Y represents a hydrogen atom or an organic group.
Z represents a non-acid-decomposable group.
Ra, Rb, Rc and Rd are each independently a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, Represents an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group;
n is an integer of 1 to 4, k is an integer of 0 to 3, and 1 ≦ n + k ≦ 4.
When n is 2 to 4, the plurality of Y, Rc, and Rd may be the same or different.
n1 represents an integer of 0 to 10.
<3>
The positive resist composition as described in <1> above, wherein the repeating unit represented by the general formula (I) is a repeating unit represented by the formula (Ib).

X represents a hydrogen atom or an organic group.
Y represents a hydrogen atom or an organic group.
Z represents a non-acid-decomposable group.
Ra, Rb, Rc and Rd are each independently a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, Represents an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group;
k is an integer of 0-3.
n1 represents an integer of 0 to 10.
<4>
The positive resist according to any one of <1> to <3>, wherein the resin (A) has a weight average molecular weight (Mw) in the range of 1,000 to 6,000. Composition.
<5>
The positive resist according to any one of <1> to <3>, wherein the resin (A) has a weight average molecular weight (Mw) in the range of 1,000 to 4,000. Composition.
<6>
A compound represented by the following general formula (K) (in general formula (K), which corresponds to a decomposition product generated when the compound represented by general formula (II) generates an acid upon irradiation with actinic rays or radiation ) R ⁹ to R ¹³ in general formula (II) is identical to ^R 9 ^{to R 13} in the compound represented by. the <1> to the boiling point, characterized at 160 ° C. or more at 1 atm) <5 > The positive resist composition as described in any one of the above.

<7>
The resist film formed with the positive resist composition as described in any one of said <1>-<6>.
<8>
A pattern forming method comprising exposing and developing the resist film according to <7> above.
<9>
The pattern forming method as described in <8> above, wherein the exposure is performed by irradiating with an electron beam or EUV.
Although this invention is invention in any one of said <1>-<9>, below, it describes also including another matter.

  (1) (A) a resin having at least a repeating unit represented by the general formula (I), which is insoluble or hardly soluble in an alkali developer and becomes soluble in an alkali developer by the action of an acid; A positive resist composition comprising a sulfonium compound which generates an acid upon irradiation with actinic rays or radiation and has a cation represented by formula (II).

X represents a hydrogen atom or an organic group.
Y represents a hydrogen atom or an organic group.
Z represents a non-acid-decomposable group.
Ra, Rb, Rc and Rd are each independently a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, Represents an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group;
m is an integer of 1 to 4, n is an integer of 1 to 4, k is an integer of 0 to 3, and 2 ≦ m + n + k ≦ 5.
When m is 2 to 4, the plurality of X may be the same or different, and when n is 2 to 4, the plurality of Y, Rc, and Rd may be the same or different.
n1 represents an integer of 0 to 10.

In general formula (II),
R ^{1 to} R ¹³ each independently represent a hydrogen atom or a substituent, and may be bonded to each other to form a ring.
Z is a single bond or a divalent linking group.

  (2) The positive resist composition as described in (1) above, wherein the repeating unit represented by the general formula (I) is a repeating unit represented by the formula (Ia).

X represents a hydrogen atom or an organic group.
Y represents a hydrogen atom or an organic group.
Z represents a non-acid-decomposable group.
Ra, Rb, Rc and Rd are each independently a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, Represents an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group;
n is an integer of 1 to 4, k is an integer of 0 to 3, and 1 ≦ n + k ≦ 4.
When n is 2 to 4, the plurality of Y, Rc, and Rd may be the same or different.
n1 represents an integer of 0 to 10.

  (3) The positive resist composition as described in (1) above, wherein the repeating unit represented by the general formula (I) is a repeating unit represented by the formula (Ib).

X represents a hydrogen atom or an organic group.
Y represents a hydrogen atom or an organic group.
Z represents a non-acid-decomposable group.
Ra, Rb, Rc and Rd are each independently a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, Represents an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group;
k is an integer of 0-3.
n1 represents an integer of 0 to 10.

  (4) The positive resist according to any one of (1) to (3), wherein the resin of component (A) has a weight average molecular weight (Mw) in the range of 1,000 to 10,000. Composition.

  (5) The positive resist according to any one of (1) to (3), wherein the resin (A) has a weight average molecular weight (Mw) in the range of 1,000 to 8,000. Composition.

  (6) The positive resist according to any one of (1) to (3), wherein the resin (A) has a weight average molecular weight (Mw) in the range of 1,000 to 6,000. Composition.

  (7) The positive resist according to any one of (1) to (3), wherein the resin (A) has a weight average molecular weight (Mw) in the range of 1,000 to 4,000. Composition.

  (8) Further, a compound having a proton acceptor functional group and decomposed by irradiation with actinic rays or radiation to reduce or disappear the proton acceptor, or generate a compound that has changed from proton acceptor to acidic is generated. The positive resist composition as described in any one of (1) to (7), which comprises a compound.

  (9) A pattern forming method comprising: forming a resist film from the positive resist composition according to any one of (1) to (8); and exposing and developing the resist film.

  Further preferred embodiments include the following configurations.

  (10) The positive resist composition as described in any one of (1) to (8) above, further comprising (C) an organic basic compound.

  (11) The positive resist composition as described in any one of (1) to (8) and (10) above, which further comprises (D) a surfactant.

  (12) The positive resist according to any one of (1) to (8), (10) and (11) above, wherein the counter anion of the compound of component (B) is an organic sulfonate anion Composition.

(13) The positive resist composition as described in (12) above, wherein the counter anion of the component (B) compound is a benzenesulfonic acid anion.
(14) The positive type as described in any one of (1) to (8) and (10) to (13) above, further comprising a compound that generates a carboxylic acid by the action of actinic rays or radiation. Resist composition.

  (15) The positive resist composition as described in any one of (1) to (8) and (10) to (14) above, which further contains a solvent.

  (16) The positive resist composition as described in (15) above, which contains propylene glycol monomethyl ether acetate as the solvent.

  (17) The positive resist composition as described in (16) above, further containing propylene glycol monomethyl ether as the solvent.

  (18) The positive resist composition as described in any one of (1) to (8) and (10) to (17) above, which is exposed by irradiation with KrF, electron beam, X-ray or EUV .

  (19) A pattern forming method comprising: forming a resist film from the resist composition according to any one of (10) to (18) above; and exposing and developing the resist film.

  Hereinafter, the compounds used in the present invention will be described in detail.

  In addition, in the description of the group (atomic group) in this specification, the description which does not describe substitution and non-substitution includes what does not have a substituent and what has a substituent. . For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

[1] Resin (A) containing the repeating unit represented by the general formula (I), which is insoluble or hardly soluble in an alkali developer and becomes soluble in an alkali developer by the action of an acid
The resin (acid-decomposable resin) that is contained in the positive resist composition of the present invention and has a property that is insoluble or hardly soluble in an alkali developer and becomes soluble in an alkali developer by the action of an acid is at least a general formula ( Contains the repeating unit represented by I).

X represents a hydrogen atom or an organic group.
Y represents a hydrogen atom or an organic group.
Z represents a non-acid-decomposable group.
Ra, Rb, Rc and Rd are each independently a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyl An oxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group is represented.
m is an integer of 1 to 4, n is an integer of 1 to 4, k is an integer of 0 to 3, and 2 ≦ m + n + k ≦ 5.
When m is 2 to 4, the plurality of X may be the same or different, and when n is 2 to 4, the plurality of Y, Rc, and Rd may be the same or different.
n1 represents an integer of 0 to 10.
Z represents a non-acid-decomposable group. A non-acid-decomposable group is a group that is not an acid-decomposable group (a group that decomposes by the action of an acid to produce an alkali-soluble group), that is, an acid generated from a photoacid generator or the like upon exposure to a hydroxyl group, A group that does not generate an alkali-soluble group such as a carboxy group.

Specific examples of the non-acid-decomposable group as Z include, for example, a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, an acyl group, —OC (═O) Ra, —OC (═O ) ORa, -C (= O) ORa, -C (= O) N (Rb) Ra, -N (Rb) C (= O) Ra, -N (Rb) C (= O) ORa, -N ( _{rb) SO 2 Ra, -SRa,} -
Examples include SO ₂ Ra, —SO ₃ Ra, or —SO ₂ N (Rb) Ra.

  The alkyl group of Z may have a substituent, and may be linear or branched. As a linear alkyl group, Preferably it is C1-C30, More preferably, it is 1-20, For example, a methyl group, an ethyl group, n-propyl group, n-butyl group, sec-butyl group, t-butyl Group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decanyl group and the like. As a branched alkyl group, Preferably it is C3-C30, More preferably, it is 3-20, for example, i-propyl group, i-butyl group, t-butyl group, i-pentyl group, t-pentyl group, Examples include i-hexyl group, t-hexyl group, i-heptyl group, t-heptyl group, i-octyl group, t-octyl group, i-nonyl group, t-decanoyl group and the like.

  The cycloalkyl group of Z may have a substituent, may be monocyclic, polycyclic, or bridged. For example, the cycloalkyl group may have a bridged structure. The monocyclic type is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclobutyl group, and a cyclooctyl group. Examples of the polycyclic type include groups having a bicyclo, tricyclo, tetracyclo structure or the like having 5 or more carbon atoms, and a cycloalkyl group having 6 to 20 carbon atoms is preferable. For example, an adamantyl group, norbornyl group, isobornyl group, Examples thereof include a camphanyl group, a dicyclopentyl group, an α-pinel group, a tricyclodecanyl group, a tetocyclododecyl group, an androstanyl group, and the following structures. A part of carbon atoms in the cycloalkyl group may be substituted with a hetero atom such as an oxygen atom.

Preferred examples of the alicyclic moiety include adamantyl group, noradamantyl group, decalin group, tricyclodecanyl group, tetracyclododecanyl group, norbornyl group, cedrol group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclodecanyl group. And cyclododecanyl group. More preferred are an adamantyl group, a decalin group, a norbornyl group, a cedrol group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecanyl group, a cyclododecanyl group, and a tricyclodecanyl group.
Examples of the substituent of these alicyclic structures include an alkyl group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group, and an alkoxycarbonyl group. The alkyl group is preferably a lower alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, or a butyl group, and more preferably a methyl group, an ethyl group, a propyl group, or an isopropyl group. Preferred examples of the alkoxy group include those having 1 to 4 carbon atoms such as a methoxy group, an ethoxy group, a propoxy group, and a butoxy group. Examples of the substituent that the alkyl group and the alkoxy group may have include a hydroxyl group, a halogen atom, and an alkoxy group (preferably having 1 to 4 carbon atoms).
Further, the further substituents that the above group may have include a hydroxyl group, a halogen atom (fluorine, chlorine, bromine, iodine), a nitro group, a cyano group, the above alkyl group, a methoxy group, an ethoxy group, Hydroxyethoxy group, propoxy group, hydroxypropoxy group, n-butoxy group, isobutoxy group, sec-butoxy group, alkoxy group such as t-butoxy group, alkoxycarbonyl group such as methoxycarbonyl group, ethoxycarbonyl group, benzyl group, phenethyl Group, aralkyl group such as cumyl group, aralkyloxy group, formyl group, acetyl group, butyryl group, benzoyl group, cyanamyl group, acyl group such as valeryl group, acyloxy group such as butyryloxy group, the above alkenyl group, vinyloxy group, Such as propenyloxy group, allyloxy group, butenyloxy group, etc. Rukeniruokishi group, said aryl group, an aryloxy group such as phenoxy group, and an aryloxycarbonyl group such as benzoyloxy group.
The substituent that the alicyclic structure of the cycloalkyl group as Z may have is preferably an alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl having 7 to 20 carbon atoms. It is a group. These substituents may further have a substituent.

  The alkoxy group as Z may have a substituent, for example, the above alkoxy group having 1 to 8 carbon atoms, for example, methoxy group, ethoxy group, propoxy group, butoxy group, pentyloxy group, hexyloxy group And a cyclohexyloxy group.

The aryl group of Z may have a substituent, and is preferably an aryl group having 6 to 30 carbon atoms, more preferably 6 to 20 carbon atoms. For example, a phenyl group, a 4-methylphenyl group, 3 -Methylphenyl group, 2-methylphenyl group, 4-ethylphenyl group, 3-ethylphenyl group, 2-ethylphenyl group, 4-n-propylphenyl group, 3-n-propylphenyl group, 2-n-propyl Phenyl group, 4-i-propylphenyl group, 3-i-propylphenyl group, 2-i-propylphenyl group, 4-cyclopropylphenyl group, 3-cyclopropylphenyl group, 2-cyclopropylphenyl group, 4- n-butylphenyl group, 3-n-butylphenyl group, 2-n-butylphenyl group, 4-i-butylphenyl group, 3-i-butylphenyl group, 2-i Butylphenyl group, 4-t-butylphenyl group, 3-t-butylphenyl group, 2-t-butylphenyl group, 4-cyclobutylphenyl group, 3-cyclobutylphenyl group, 2-cyclobutylphenyl group, 4 -Cyclopentylphenyl group, 4-cyclohexylphenyl group, 4-cycloheptenylphenyl group, 4-cyclooctanylphenyl group, 2-cyclopentylphenyl group, 2-cyclohexylphenyl group, 2-cycloheptenylphenyl group, 2-cyclo Octanylphenyl group, 3-cyclopentylphenyl group, 3-cyclohexylphenyl group, 3-cycloheptenylphenyl group, 3-cyclooctanylphenyl group, 4-cyclopentyloxyphenyl group, 4-cyclohexyloxyphenyl group, 4-cyclo Heptenyloxyphenyl group, 4 Cyclooctanyloxyphenyl group, 2-cyclopentyloxyphenyl group, 2-cyclohexyloxyphenyl group, 2-cycloheptenyloxyphenyl group, 2-cyclooctanyloxyphenyl group, 3-cyclopentyloxyphenyl group, 3-cyclohexyloxy Phenyl group, 3-cycloheptenyloxyphenyl group, 3-cyclooctanyloxyphenyl group, 4-n-pentylphenyl group, 4-n-hexylphenyl group, 4-n-heptenylphenyl group, 4-n- Octanylphenyl group, 2-n-pentylphenyl group, 2-n-hexylphenyl group, 2-n-heptenylphenyl group, 2-n-octanylphenyl group, 3-n-pentylphenyl group, 3-n -Hexylphenyl group, 3-n-heptenylphenyl group, 3-n-octanyl Phenyl group, 2,6-di-isopropylphenyl group, 2,3-di-isopropylphenyl group, 2,4-di-isopropylphenyl group, 3,4-di-isopropylphenyl group, 3,6-di-t -Butylphenyl group, 2,3-di-t-butylphenyl group, 2,4-di-t-butylphenyl group, 3,4-di-t-butylphenyl group, 2,6-di-n-butyl Phenyl group, 2,3-di-n-butylphenyl group, 2,4-di-n-butylphenyl group, 3,4-di-n-butylphenyl group, 2,6-di-i-butylphenyl group 2,3-di-i-butylphenyl group, 2,4-di-i-butylphenyl group, 3,4-di-i-butylphenyl group, 2,6-di-t-amylphenyl group, 2 , 3-di-t-amylphenyl group, 2,4-di-t-amylphenyl group, , 4-di-t-amylphenyl group, 2,6-di-i-amylphenyl group, 2,3-di-i-amylphenyl group, 2,4-di-i-amylphenyl group, 3,4 -Di-i-amylphenyl group, 2,6-di-n-pentylphenyl group, 2,3-di-n-pentylphenyl group, 2,4-di-n-pentylphenyl group, 3,4-di -N-pentylphenyl group, 4-adamantylphenyl group, 2-adamantylphenyl group, 4-isoboronylphenyl group, 3-isoboronylphenyl group, 2-isobornylphenyl group, 4-cyclopentyloxyphenyl group, 4-cyclohexyloxyphenyl group, 4-cycloheptenyloxyphenyl group, 4-cyclooctanyloxyphenyl group, 2-cyclopentyloxyphenyl group, 2-cyclohexyloxyphenyl Group, 2-cycloheptenyloxyphenyl group, 2-cyclooctanyloxyphenyl group, 3-cyclopentyloxyphenyl group, 3-cyclohexyloxyphenyl group, 3-cycloheptenyloxyphenyl group, 3-cyclooctanyloxy Phenyl group, 4-n-pentyloxyphenyl group, 4-n-hexyloxyphenyl group, 4-n-heptenyloxyphenyl group, 4-n-octanyloxyphenyl group, 2-n-pentyloxyphenyl group, 2-n-hexyloxyphenyl group, 2-n-heptenyloxyphenyl group, 2-n-octanyloxyphenyl group, 3-n-pentyloxyphenyl group, 3-n-hexyloxyphenyl group, 3-n -Heptenyloxyphenyl group, 3-n-octanyloxyphenyl group, 2,6-di-iso Propyloxyphenyl group, 2,3-di-isopropyloxyphenyl group, 2,4-di-isopropyloxyphenyl group, 3,4-di-isopropyloxyphenyl group, 2,6-di-t-butyloxyphenyl group 2,3-di-t-butyloxyphenyl group, 2,4-di-t-butyloxyphenyl group, 3,4-di-t-butyloxyphenyl group, 2,6-di-n-butyloxy Phenyl group, 2,3-di-n-butyloxyphenyl group, 2,4-di-n-butyloxyphenyl group, 3,4-di-n-butyloxyphenyl group, 2,6-di-i- Butyloxyphenyl group, 2,3-di-i-butyloxyphenyl group, 2,4-di-i-butyloxyphenyl group, 3,4-di-i-butyloxyphenyl group, 2,6-di- t-Amyloxypheny Group, 2,3-di-t-amyloxyphenyl group, 2,4-di-t-amyloxyphenyl group, 3,4-di-t-amyloxyphenyl group, 2,6-di-i-amyl Oxyphenyl group, 2,3-di-i-amyloxyphenyl group, 2,4-di-i-amyloxyphenyl group, 3,4-di-i-amyloxyphenyl group, 2,6-di-n -Pentyloxyphenyl group, 2,3-di-n-pentyloxyphenyl group, 2,4-di-n-pentyloxyphenyl group, 3,4-di-n-pentyloxyphenyl group, 4-adamantyloxyphenyl Group, 3-adamantyloxyphenyl group, 2-adamantyloxyphenyl group, 4-isoboronyloxyphenyl group, 3-isoboronyloxyphenyl group, 2-isoboronyloxyphenyl group and the like. , They are not limited to substituents other than well above examples it is further substituted as long as it is within the above range.

  The acyl group as Z may have a substituent, for example, an acyl group having 2 to 8 carbon atoms, specifically, a formyl group, an acetyl group, a propanoyl group, a butanoyl group, a pivaloyl group. Preferred examples include benzoyl group.

  The substituents that these groups may have include hydroxyl group, carboxyl group, halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom), alkoxy group (methoxy group, ethoxy group, propoxy group, butoxy group) Etc.). As for the cyclic structure, examples of the substituent further include an alkyl group (preferably having 1 to 8 carbon atoms).

  The alkyl group, cycloalkyl group or aryl group as Ra and Rb is the same as those exemplified as Z.

  The organic group as X and Y preferably has 1 to 40 carbon atoms and may be an acid-decomposable group or a non-acid-decomposable group.

Examples of the non-acid-decomposable group include the same organic groups as those in the non-acid-decomposable group as Z. (X is an organic group and does not contain a halogen atom as a non-acid-decomposable group.)
Further, for example, an alkyl group, a cycloalkyl group, an alkenyl group, an aryl group, an alkyloxy group (excluding -O-tertiary alkyl), an acyl group, a cycloalkyloxy group, an alkenyloxy group, an aryloxy group, Examples thereof include an alkylcarbonyloxy group, an alkylamidomethyloxy group, an alkylamide group, an arylamidomethyl group, an arylamido group.

  The non-acid-decomposable group is preferably an acyl group, an alkylcarbonyloxy group, an alkyloxy group, a cycloalkyloxy group, an aryloxy group, an alkylamidooxy group, or an alkylamido group, more preferably an acyl group or an alkylcarbonyl group. An oxy group, an alkyloxy group, a cycloalkyloxy group, and an aryloxy group;

In the non-acid-decomposable group, the alkyl group is preferably an alkyl group having 1 to 4 carbon atoms such as a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, or a t-butyl group. As the alkyl group, those having 3 to 10 carbon atoms such as cyclopropyl group, cyclobutyl group, cyclohexyl group and adamantyl group are preferable, and as the alkenyl group, carbon number such as vinyl group, propenyl group, allyl group and butenyl group. Those having 2 to 4 carbon atoms are preferred, those having 2 to 4 carbon atoms such as vinyl, propenyl, allyl and butenyl groups are preferred as alkenyl groups, and phenyl, xylyl and toluyl groups are preferred as aryl groups. And those having 6 to 14 carbon atoms such as cumenyl group, naphthyl group and anthracenyl group are preferable. The alkoxy group is preferably an alkoxy group having 1 to 4 carbon atoms such as a methoxy group, an ethoxy group, a hydroxyethoxy group, a propoxy group, a hydroxypropoxy group, an n-butoxy group, an isobutoxy group, or a sec-butoxy group.

As the organic group of the acid-decomposable group of X, for example, —C (R _11a ) (R _12a ) (R _13a ), —C (R _14a ) (R _15a ) (OR _16a ), —CO—OC (R _11a ) ( _R12a ) ( _R13a ).
That is, when it is an organic group of an acid-decomposable group of X, X is released by the action of an acid, and a hydroxyl group that is an alkali-soluble group is generated on the benzene ring represented by the general formula (I).

R _{11a to} R _13a each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an aralkyl group or an aryl group. R _14a and R _15a each independently represents a hydrogen atom or an alkyl group. R _16a represents an alkyl group, a cycloalkyl group, an alkenyl group, an aralkyl group or an aryl group. Two of R _11a , R _12a and R _13a , or two of R _14a , R _15a and R _16a may be bonded to form a ring.

  A group having an acid-decomposable group can be introduced into X in the formula (I) by modification. Thus, X which introduce | transduced the acid-decomposable group is as follows, for example.

-[C ( _R17a ) ( _R18a )] _p- CO-OC ( _R11a ) ( _R12a ) ( _R13a )
R _17a and R _18a each independently represents a hydrogen atom or an alkyl group. p is an integer of 1 to 4.

In general formula (I),
Examples of the alkyl group for Ra, Rb, Rc, and Rd include the same alkyl groups as Z in formula (I).
Examples of the alkoxy group of Ra, Rb, Rc, and Rd include the same alkoxy groups as Z in the general formula (I).
Examples of the halogen atom for Ra, Rb, Rc, and Rd include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
Examples of the acyl group of Ra, Rb, Rc, and Rd include the same acyl groups as Z in formula (I).
The acyloxy group of Ra, Rb, Rc, Rd may have a substituent, preferably an acyloxy group having 2 to 8 carbon atoms, such as an acetoxy group, a propionyloxy group, a butyllioxy group, a valeryloxy group, A pivaloyloxy group, a hexanoyloxy group, an octanoyloxy group, a benzoyloxy group, etc. can be mentioned.
Examples of the cycloalkyl group of Ra, Rb, Rc, and Rd include the same cycloalkyl groups as Z in the general formula (I).
Examples of the aryl group for Ra, Rb, Rc, and Rd include the same aryl groups as Z in formula (I).
The alkyloxycarbonyl group of Ra, Rb, Rc, and Rd may have a substituent and preferably has 2 to 8 carbon atoms, and examples thereof include a methoxycarbonyl group, an ethoxycarbonyl group, and a propoxycarbonyl group. Can do.
The alkylcarbonyloxy group of Ra, Rb, Rc, and Rd may have a substituent, preferably has 2 to 8 carbon atoms, and examples thereof include a methylcarbonyloxy group and an ethylcarbonyloxy group. .
The aralkyl group of Ra, Rb, Rc and Rd may have a substituent, and preferably an aralkyl group having 7 to 16 carbon atoms, for example, a benzyl group.

  As the repeating unit represented by the general formula (I), a repeating unit represented by the formula (Ia) is preferable, and a repeating unit represented by the formula (Ib) is more preferable.

  X, Y, Z, Ra, Rb, Rc, Rd, n, k and n1 have the same meaning as in formula (I).

  Although the specific example of the repeating unit represented by general formula (I) is given, it is not limited to them.

  Although the specific example of the acid-decomposable group as X is given, it is not limited to them.

  A resin (A) containing at least the repeating unit represented by the general formula (I), which is insoluble or hardly soluble in an alkali developer and becomes soluble in an alkali developer by the action of an acid, Combining all the specific examples (M1-1) to (M1-56) of the repeating unit represented by the formula (I) and the specific examples (H-1) to (H-15) of the acid-decomposable group of X. Can do.

In addition, the resin (A) contains an alkali-soluble group such as a phenolic hydroxyl group, a carboxyl group, a sulfonic acid group, a hexafluoroisopropanol group (—C (CF ₃ ) ₂ ) in order to maintain good developability for an alkali developer. Other suitable polymerizable monomers may be copolymerized so that (OH) can be introduced, and other hydrophobic polymerizable monomers such as alkyl acrylates and alkyl methacrylates may be copolymerized to improve film quality. May be.
Although the specific example of these repeating units is given, it is not limited to these.

  In order to adjust the hydrophilicity / hydrophobicity of the resin, a methacrylate or acrylate containing a hydrophilic group such as alkyleneoxy or lactone may be copolymerized.

  In addition, styrene (alkyl group, halogen atom, alkylthio group, sulfonyl group, ester group may be substituted), vinylnaphthalene (alkyl group, halogen atom, alkylthio group, sulfonyl group, ester group may be substituted) Good), vinyl anthracene (alkyl group, halogen atom, alkylthio group, sulfonyl group, ester group may be substituted), acrylamides, methacrylamides, allyl compounds, vinyl ethers, vinyl esters, etc. It may be.

  The content of the repeating unit represented by the general formula (I) is preferably 3 to 95 mol%, more preferably 5 to 90 mol%, and particularly preferably 10 to 85 mol% in all repeating units constituting the resin. It is.

  The content of the repeating unit having an alkali-soluble group such as a hydroxyl group, a carboxy group, or a sulfonic acid group is preferably 1 to 99 mol%, more preferably 3 to 95 mol%, particularly preferably in all repeating units constituting the resin. 5 to 90 mol%.

The content of the repeating unit having an acid-decomposable group is preferably 3 to 95 mol%, more preferably 5 to 90 mol%, and particularly preferably 10 to 85 mol% in all repeating units constituting the resin.
Although the specific example of the repeating unit which has an acid-decomposable group is given to the following, it is not limited to these. As described above, the repeating unit represented by the general formula (I) may be a repeating unit having an acid-decomposable group.

Specific examples of the resin (A) containing the repeating unit represented by the general formula (I), which is insoluble or hardly soluble in an alkali developer and becomes soluble in an alkali developer by the action of an acid, are as follows. However, it is not limited to these.
Note that (P-20) is a reference example.

  Resins are synthesized by reacting a precursor of an acid-decomposable group with an alkali-soluble resin as described in European Patent No. 254,533, JP-A-2-258500, No. 3-223860 and No. 4-251259. It can be synthesized by a known synthesis method such as a method or a method of copolymerizing a monomer having an acid-decomposable group with various monomers.

The weight average molecular weight (Mw) of the resin is preferably in the range of 500 to 200,000, more preferably in the range of 700 to 100,000, and particularly preferably in the range of 1,000 to 50,000. is there. It is preferably 200000 or less from the viewpoint of the dissolution rate and sensitivity of the resin itself with respect to alkali. Moreover, it is preferable that molecular weight dispersion degree (Mw / Mn) is 1.0-4.0, More preferably, it is 1.0-3.0, Most preferably, it is 1.0-2.5.
The weight average molecular weight (Mw) of the resin (A) is preferably in the range of 1,000 to 10,000, more preferably in the range of 1,000 to 8,000, and even more preferably 1,000. It is the range of -6,000, Most preferably, it is the range of 1,000-4,000.

  Here, the weight average molecular weight is defined by a polystyrene conversion value of gel permeation chromatography.

  Resin (A) with low molecular weight dispersion can be changed in various ways for the synthesis conditions (amount of polymerization solvent, amount of polymerization initiator) and purification conditions (type / amount of reprecipitation solvent, number of reprecipitation operations). Can be obtained. For example, the molecular weight can be adjusted by changing the amount of the polymerization solvent or initiator, and the degree of dispersion of the resin can be reduced by changing the reprecipitation solvent or increasing the number of reprecipitation operations. As the reprecipitation solvent, it is preferable to use a mixture of two or more kinds of solvents, or to carry out the reprecipitation operation twice or more, and to perform the reprecipitation operation using a reprecipitation solvent in which two or more kinds of solvents are mixed. More preferably, it is performed more than once. Alternatively, it can also be synthesized by synthesizing polyvinylphenol having a low molecular weight dispersity via a living anion, living radical, or living cation polymerization method, and then acetalizing using alkyl vinyl ethers.

  Moreover, you may use resin (A) in combination of 2 or more types.

  The total amount of the resin (A) added is generally 30 to 99% by mass, preferably 40 to 97% by mass, and particularly preferably 50 to 95% by mass with respect to the solid content of the positive resist.

[2] A sulfonium compound (B) having a cation represented by the general formula (II)
The resist composition of the present invention comprises a sulfonium compound having a cation represented by the general formula (II) (hereinafter referred to simply as a sulfonium salt (B) as a compound that generates an acid upon irradiation with actinic rays or radiation (acid generator). Contain).

In general formula (II),
R ^{1 to} R ¹³ each independently represent a hydrogen atom or a substituent, and may be bonded to each other to form a ring.
Z is a single bond or a divalent linking group.

R ^{1 to} R ¹³ are each independently a hydrogen atom or a substituent, and the substituent may be any, and is not particularly limited. For example, a halogen atom, an alkyl group (a cycloalkyl group, a bicycloalkyl group, Including tricycloalkyl groups), alkenyl groups (including cycloalkenyl groups and bicycloalkenyl groups), alkynyl groups, aryl groups, heterocyclic groups (also referred to as heterocyclic groups), cyano groups, hydroxyl groups, nitro groups , Carboxyl group, alkoxy group, aryloxy group, silyloxy group, heterocyclic oxy group, acyloxy group, carbamoyloxy group, alkoxycarbonyloxy group, aryloxycarbonyloxy group, amino group (including anilino group), ammonio group, acylamino Group, aminocarbonylamino group, alkoxycal Nylamino group, aryloxycarbonylamino group, sulfamoylamino group, alkyl and arylsulfonylamino group, mercapto group, alkylthio group, arylthio group, heterocyclic thio group, sulfamoyl group, sulfo group, alkyl and arylsulfinyl group, alkyl and Arylsulfonyl group, acyl group, aryloxycarbonyl group, alkoxycarbonyl group, carbamoyl group, aryl and heterocyclic azo group, imide group, phosphino group, phosphinyl group, phosphinyloxy group, phosphinylamino group, phosphono group, Examples include silyl groups, hydrazino groups, ureido groups, boronic acid groups (—B (OH) ₂ ), phosphato groups (—OPO (OH) ₂ ), sulfato groups (—OSO ₃ H), and other known substituents. As mentioned.

R ^{1 to} R ¹³ are preferably a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group (including a bicycloalkyl group or a tricycloalkyl group), an alkenyl group (including a cycloalkenyl group or a bicycloalkenyl group), alkynyl Group, aryl group, cyano group, hydroxyl group, carboxyl group, alkoxy group (including cycloalkoxy group), aryloxy group, acyloxy group, carbamoyloxy group, acylamino group, aminocarbonylamino group, alkoxycarbonylamino group (cycloalkoxy group) Carbonylamino group), aryloxycarbonylamino group, sulfamoylamino group, alkyl, cycloalkyl or arylsulfonylamino group, alkylthio group (including cycloalkylthio group), arylthio group, sulfa Yl group, an alkyl, cycloalkyl or aryl-sulfonyl group, an aryloxycarbonyl group, (including cycloalkoxy group) alkoxycarbonyl group, a carbamoyl group, an imido group, a silyl group, a ureido group.
R ^{1 to} R ¹³ are more preferably a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group (including a bicycloalkyl group or a tricycloalkyl group), a cyano group, a hydroxyl group, or an alkoxy group (including a cycloalkoxy group). ), Acyloxy group, acylamino group, aminocarbonylamino group, alkoxycarbonylamino group (including cycloalkoxycarbonylamino group), alkyl, cycloalkyl or arylsulfonylamino group, alkylthio group (including cycloalkylthio group), sulfamoyl group, An alkyl, cycloalkyl or arylsulfonyl group, an alkoxycarbonyl group (including a cycloalkoxycarbonyl group), and a carbamoyl group;
As R ^{1 to} R ¹³ , hydrogen atoms, alkyl groups, cycloalkyl groups (including bicycloalkyl groups and tricycloalkyl groups), cyano groups, hydroxyl groups, alkoxy groups (including cycloalkoxy groups), alkyls are particularly preferable. A sulfonyl group.

Two of R ^{1 to} R ¹³ may jointly form a ring (aromatic or non-aromatic hydrocarbon ring or heterocyclic ring). Examples of the combination of two or more of R ^{1 to} R ^{13 that} form a ring include R ¹ and R ¹³ , and R ⁸ and R ⁹ .
The ring to be formed may be a polycyclic fused ring. Specific examples of the ring include, for example, a benzene ring, naphthalene ring, anthracene ring, phenanthrene ring, fluorene ring, triphenylene ring, naphthacene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, Pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indolizine ring, indole ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinolidine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinoxazoline ring, isoquinoline ring Carbazole ring, phenanthridine ring, acridine ring, phenanthroline ring, thianthrene ring, chromene ring, xanthene ring, phenoxathiin ring, phenothiazine ring, and phenazine ring.

The substituent as R ^{1 to} R ¹³ preferably has 20 or less carbon atoms, and more preferably 15 or less carbon atoms.

Z represents a single bond or a divalent linking group, and examples of the divalent linking group include a direct bond, an alkylene group, an arylene group, a carbonyl group, a sulfide group, a sulfone group, —COO—, —CONH—, — SO ₂ NH—, —CF ₂ —, —CF ₂ CF ₂ —, —OCF ₂ O—, —CF ₂ OCF ₂ —,
_{-SS -, - CH 2 SO 2} CH 2 -, - CH 2 COCH 2 -, - COCF 2 CO -, - COCO -, - OCOO -.- OSO 2 O-, an ether group, a thioether group, an amino group, an acyl A group, an alkylsulfonyl group, —CH═CH—, —C≡C—, an aminocarbonylamino group, an aminosulfonylamino group, and the like, and may have a substituent. These substituents are the same as the substituents shown for R ^{1 to} R ¹³ above.

The connection as Z preferably has 15 or less carbon atoms, more preferably 10 or less carbon atoms.
Z is preferably a carbonyl group, sulfide group, sulfone group, —COO—, —CONH—, —SO ₂ NH—, —CF ₂ —, —CF ₂ CF ₂ —, —OCF ₂ O—, —CF ₂ OCF ₂ -, - SS -, - CH 2 SO 2 CH 2 -, - CH 2 COCH 2 -, - COCF 2 CO -, - COCO -, - OCOO -, - is OSO ₂ O-.
Z is more preferably a carbonyl group, a sulfide group, a sulfone group, -COO -, - CONH -, - SO 2 NH -, - CF 2 -, - CF 2 CF 2 -, - a COCO-, particularly preferably carbonyl Group, sulfide group and sulfone group, more preferably sulfone group.

  Specific examples of the cation represented by the general formula (II) are shown below, but are not limited thereto.

R ^{9 to} R ^{13 in the} cation represented by the general formula (II) are preferably at least one organic group (not including a hydrogen atom). Specific examples include (B1-2) to (B1-8), (B1-10) to (B1-16), and (B1-18) to (B1-43).

In the compound represented by the general formula (II), the boiling point at 1 atm of the compound represented by the following general formula (K) corresponding to a decomposition product that is considered to be generated when generating an acid upon irradiation with actinic rays or radiation is It is preferable to have a substituent of R ^{9 to} R ¹³ so that it is 160 ° C. or higher, preferably 180 ° C. or higher, more preferably 190 ° C. or higher, and particularly preferably 200 ° C. or higher.

  Specific examples of the decomposition product (K) in the cation represented by the general formula (II) include the following, but are not limited thereto.

  Table 1 shows specific examples of the decomposition product (K), boiling points of the decomposition products, and literature values of the boiling points. As the literature value, “Dictionary of compounds (Asakura Shoten Co., Ltd., November 20, 1997, first edition)” was referred to. In addition, the boiling point of the decomposition product was measured by the method described in the 4th edition experimental chemistry course (editor: The Chemical Society of Japan, issuer: Maruzen Co., Ltd., issued on February 5, 1992).

The sulfonium salt (B) having a cation represented by the general formula (II) has a counter anion. As an anion, an organic anion is desirable. An organic anion represents an anion containing at least one carbon atom. Furthermore, the organic anion is preferably a non-nucleophilic anion. A non-nucleophilic anion is an anion that has an extremely low ability to cause a nucleophilic reaction, and is an anion that can suppress degradation over time due to an intramolecular nucleophilic reaction.
Examples of the non-nucleophilic anion include a sulfonate anion, a carboxylate anion, a sulfonylimide anion, a bis (alkylsulfonyl) imide anion, and a tris (alkylsulfonyl) methyl anion.
Examples of the non-nucleophilic sulfonate anion include an alkyl sulfonate anion, an aryl sulfonate anion, and a camphor sulfonate anion. Examples of the non-nucleophilic carboxylate anion include an alkylcarboxylate anion, an arylcarboxylate anion, and an aralkylcarboxylate anion.

The alkyl moiety in the alkyl sulfonate anion may be an alkyl group or a cycloalkyl group, and preferably an alkyl group having 1 to 30 carbon atoms and a cycloalkyl group having 3 to 30 carbon atoms, such as a methyl group or an ethyl group. Group, propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, pentyl group, neopentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, tridecyl group Tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, eicosyl group, cyclopropyl group, cyclopentyl group, cyclohexyl group, adamantyl group, norbornyl group, boronyl group and the like.
The aryl group in the aryl sulfonate anion is preferably an aryl group having 6 to 14 carbon atoms, such as a phenyl group, a tolyl group, and a naphthyl group.

  Examples of the substituent of the alkyl group, cycloalkyl group and aryl group in the alkyl sulfonate anion and aryl sulfonate anion include, for example, a nitro group, a halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom), carboxyl group, Hydroxyl group, amino group, cyano group, alkoxy group (preferably 1 to 5 carbon atoms), cycloalkyl group (preferably 3 to 15 carbon atoms), aryl group (preferably 6 to 14 carbon atoms), alkoxycarbonyl group (preferably May include 2 to 7 carbon atoms, an acyl group (preferably 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably 2 to 7 carbon atoms), and the like. About the aryl group and ring structure which each group has, an alkyl group (preferably C1-C15) can further be mentioned as a substituent.

Examples of the alkyl moiety in the alkylcarboxylate anion include the same alkyl group and cycloalkyl group as in the alkylsulfonate anion. Examples of the aryl group in the arylcarboxylate anion include the same aryl groups as in the arylsulfonate anion. The aralkyl group in the aralkyl carboxylate anion is preferably an aralkyl group having 6 to 12 carbon atoms, such as benzyl group, phenethyl group, naphthylmethyl group, naphthylethyl group, naphthylmethyl group and the like.
Examples of the alkyl group, cycloalkyl group, aryl group and aralkyl group substituent in the alkylcarboxylate anion, arylcarboxylate anion and aralkylcarboxylate anion include, for example, the same halogen atom, alkyl group as in the arylsulfonate anion, A cycloalkyl group, an alkoxy group, an alkylthio group, etc. can be mentioned. Examples of the sulfonylimide anion include saccharin anion.

The alkyl group in the bis (alkylsulfonyl) imide anion and tris (alkylsulfonyl) methyl anion is preferably an alkyl group having 1 to 5 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, An isobutyl group, a sec-butyl group, a pentyl group, a neopentyl group, and the like can be given. Examples of the substituent for these alkyl groups include a halogen atom, an alkyl group substituted with a halogen atom, an alkoxy group, and an alkylthio group.
Examples of other non-nucleophilic anions include fluorinated phosphorus, fluorinated boron, and fluorinated antimony.

The counter anion of the sulfonium salt (B) having a cation represented by the general formula (II) is preferably a sulfonate anion, and more preferably an aryl sulfonic acid.
Specific examples of counter anions include methane sulfonate anion, trifluoromethane sulfonate anion, pentafluoroethane sulfonate anion, heptafluoropropane sulfonate anion, perfluorobutane sulfonate anion, perfluorohexane sulfonate anion, perfluoro. Octane sulfonate anion, pentafluorobenzene sulfonate anion, 3,5-bistrifluoromethylbenzene sulfonate anion, 2,4,6-triisopropylbenzene sulfonate anion, perfluoroethoxyethane sulfonate anion, 2, 3, 5 , 6-Tetrafluoro-4-dodecyloxybenzenesulfonate anion, p-toluenesulfonate anion, 3,5-bistrifluorobenzenesulfonate anion, pentafluorobenzenesulfonate anion ON, 2,4,6-trimethylbenzenesulfonic acid anion and the like.

The counter anion of the sulfonium salt (B) having a cation represented by the general formula (II) is particularly preferably a sulfonic acid containing no halogen atom.
Specific examples include a methanesulfonate anion, 2,4,6-triisopropylbenzenesulfonate anion, p-toluenesulfonate anion, 2,4,6-trimethylbenzenesulfonate anion, and the like.

  The anion which the sulfonium salt (B) has together with the cation represented by the general formula (II) may be monovalent or divalent. When the anion is divalent or higher, the sulfonium salt (B) can have two or more cations represented by the general formula (II).

  The molecular weight of the sulfonium salt (B) having a cation represented by the general formula (II) is generally 250 to 1500, preferably 250 to 1000.

  The compound of general formula (II) is obtained by oxidizing a cyclic sulfide compound with hydrogen peroxide to form a sulfoxide, reacting the diphenyl sulfoxide compound in the presence of an acid catalyst, synthesizing a triphenylsulfonium salt structure, and then exchanging the salt with the desired anion. Can be synthesized.

  The content of the compound (B) in the positive resist composition of the present invention is preferably 0.001 to 40% by mass, more preferably 0.01 to 20% by mass, based on the total solid content of the composition. Especially preferably, it is 0.1-10 mass%. Moreover, 1 type may be used for a compound (B), and 2 or more types may be mixed and used for it.

  The compound (B) is an acid generator that generates an acid upon irradiation with actinic rays or radiation. The compound of component (B) can be synthesized by a known method described in JP-A No. 2003-149800.

  As an example, compounds (acid generators) that generate an acid upon irradiation with actinic rays or radiation include cation specific examples (B1-1) to (B1-44) and counter anion specific examples (BA-1) to ( All of BA-64) can be combined.

  Furthermore, although the specific example of the compound (acid generator) which generate | occur | produces an acid by irradiation of actinic light or a radiation is given, it is not limited to these.

[3] A compound that has a proton acceptor functional group and generates a compound that is decomposed by irradiation with actinic rays or radiation to decrease, disappear, or change the proton acceptor property to acidic. The positive resist composition of the present invention has a proton acceptor functional group, and is decomposed by irradiation with actinic rays or radiation, whereby the proton acceptor property is lowered, disappeared, or changed from proton acceptor property to acidity. It is preferable to contain a compound that generates a compound (hereinafter also referred to as “compound (PA)”).

  A compound (PA) generated by decomposition by irradiation with actinic rays or radiation, wherein the proton acceptor property is lowered, disappears, or is changed from proton acceptor property to acid, is represented by the following general formula (PA-I) Mention may be made of the compounds represented.

In general formula (PA-I),
A represents a divalent linking group.
Q represents a sulfo group (—SO ₃ H) or a carboxyl group (—CO ₂ H).
X represents —SO ₂ — or —CO—.
n represents 0 or 1.
B represents a single bond, an oxygen atom or -N (Rx)-.
Rx represents a hydrogen atom or a monovalent organic group.
R represents a monovalent organic group having a proton acceptor functional group or a monovalent organic group having an ammonium group.

  The divalent linking group in A is preferably a divalent linking group having 2 to 12 carbon atoms, and examples thereof include an alkylene group and a phenylene group. More preferably, it is an alkylene group having at least one fluorine atom, and a preferable carbon number is 2 to 6, more preferably 2 to 4. The alkylene chain may have a linking group such as an oxygen atom or a sulfur atom. The alkylene group is particularly preferably an alkylene group in which 30 to 100% of the number of hydrogen atoms are substituted with fluorine atoms, and more preferably, the carbon atom bonded to the Q site has a fluorine atom. Further, a perfluoroalkylene group is preferable, and a perfluoroethylene group, a perfluoropropylene group, and a perfluorobutylene group are more preferable.

The monovalent organic group in Rx preferably has 4 to 30 carbon atoms, and examples thereof include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group.
The alkyl group in Rx may have a substituent, preferably a linear or branched alkyl group having 1 to 20 carbon atoms, and has an oxygen atom, a sulfur atom, or a nitrogen atom in the alkyl chain. May be. Specifically, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-octyl group, n-dodecyl group, n-tetradecyl group, n-octadecyl group, etc. And a branched alkyl group such as isopropyl group, isopropyl group, isobutyl group, t-butyl group, neopentyl group, 2-ethylhexyl group.
Examples of the alkyl group having a substituent include groups in which a linear or branched alkyl group is substituted with a cycloalkyl group (for example, an adamantylmethyl group, an adamantylethyl group, a cyclohexylethyl group, a camphor residue, etc.). .
The cycloalkyl group in Rx may have a substituent, preferably a cycloalkyl group having 3 to 20 carbon atoms, and may have an oxygen atom in the ring. Specific examples include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a norbornyl group, an adamantyl group, and the like.
The aryl group in Rx may have a substituent and is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group and a naphthyl group.
The aralkyl group in Rx may have a substituent, preferably an aralkyl group having 7 to 20 carbon atoms, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, and a naphthylethyl group.
The alkenyl group in Rx may have a substituent, and examples thereof include a group having a double bond at an arbitrary position of the alkyl group mentioned as Rx.

  The proton acceptor functional group in R is a group capable of electrostatically interacting with protons or a functional group having electrons, such as a functional group having a macrocyclic structure such as a cyclic polyether. Or a functional group having a nitrogen atom with a lone electron pair that does not contribute to π conjugation. The nitrogen atom having a lone electron pair that does not contribute to π conjugation is, for example, a nitrogen atom having a partial structure represented by the following general formula.

Preferable partial structures of the proton acceptor functional group include, for example, crown ether, azacrown ether, tertiary amine, secondary amine, primary amine, pyridine, imidazole, pyrazine structure and the like.
Preferred examples of the partial structure of the ammonium group include tertiary ammonium, secondary ammonium, primary ammonium, pyridinium, imidazolinium, and pyrazinium structures.
The group containing such a structure preferably has 4 to 30 carbon atoms, and examples thereof include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group.
The alkyl group, the cycloalkyl group, the aryl group, the aralkyl group, the alkyl group in the alkenyl group, the cycloalkyl group, the aryl group, the aralkyl group, and the alkenyl group, which contain a proton acceptor functional group or an ammonium group in R, are represented by Rx. These are the same as the alkyl group, cycloalkyl group, aryl group, aralkyl group and alkenyl group mentioned.

  Examples of the substituent that each group may have include, for example, a halogen atom, a hydroxyl group, a nitro group, a cyano group, a carboxy group, a carbonyl group, a cycloalkyl group (preferably having 3 to 10 carbon atoms), and an aryl group (preferably Has 6 to 14 carbon atoms, an alkoxy group (preferably 1 to 10 carbon atoms), an acyl group (preferably 2 to 20 carbon atoms), an acyloxy group (preferably 2 to 10 carbon atoms), an alkoxycarbonyl group (preferably C2-C20), an aminoacyl group (preferably C2-C20) etc. are mentioned. As for the cyclic structure in the aryl group, cycloalkyl group and the like, examples of the substituent further include an alkyl group (preferably having a carbon number of 1 to 20). As for the aminoacyl group, examples of the substituent further include 1 or 2 alkyl groups (preferably having 1 to 20 carbon atoms).

When B is -N (Rx)-, R and Rx are preferably bonded to form a ring. By forming the ring structure, the stability is improved, and the storage stability of the composition using the ring structure is improved. The number of carbon atoms forming the ring is preferably 4 to 20, and may be monocyclic or polycyclic, and may contain an oxygen atom, a sulfur atom, or a nitrogen atom in the ring.
Examples of the monocyclic structure include a 4-membered ring, a 5-membered ring, a 6-membered ring, a 7-membered ring, and an 8-membered ring containing a nitrogen atom. Examples of the polycyclic structure include a structure composed of a combination of two or three or more monocyclic structures. The monocyclic structure and polycyclic structure may have a substituent, for example, a halogen atom, a hydroxyl group, a cyano group, a carboxy group, a carbonyl group, a cycloalkyl group (preferably having 3 to 10 carbon atoms), Aryl group (preferably having 6 to 14 carbon atoms), alkoxy group (preferably having 1 to 10 carbon atoms), acyl group (preferably having 2 to 15 carbon atoms), acyloxy group (preferably having 2 to 15 carbon atoms), alkoxycarbonyl A group (preferably having 2 to 15 carbon atoms), an aminoacyl group (preferably having 2 to 20 carbon atoms) and the like are preferable. As for the cyclic structure in the aryl group, cycloalkyl group and the like, examples of the substituent further include an alkyl group (preferably having 1 to 15 carbon atoms). As for the aminoacyl group, examples of the substituent include 1 or 2 alkyl groups (preferably having 1 to 15 carbon atoms).

  Among the compounds represented by the general formula (PA-I), a compound in which the Q site is a sulfonic acid can be synthesized by using a general sulfonamidation reaction. For example, a method in which one sulfonyl halide part of a bissulfonyl halide compound is selectively reacted with an amine compound to form a sulfonamide bond and then the other sulfonyl halide part is hydrolyzed, or a cyclic sulfonic acid anhydride is used. It can be obtained by a method of ring-opening by reacting with an amine compound.

  Hereinafter, although the specific example of a compound represented by general formula (PA-I) is shown, this invention is not limited to this.

  The compound represented by the following general formula (PA-II), which is generated by the decomposition of the compound (PA) upon irradiation with actinic rays or radiation and whose proton acceptor property is lowered, disappeared, or changed from proton acceptor property to acidity, ) Can be mentioned.

In general formula (PA-II),
Q ₁ and Q ₂ each independently represents a monovalent organic group. However, either _one of Q ₁ and Q ₂ has a proton acceptor functional group. Q ₁ and Q ₂ may combine to form a ring, and the formed ring may have a proton acceptor functional group.
X ₁ and X ₂ each independently represent —CO— or —SO ₂ —.

The monovalent organic groups as Q ₁ and Q _{2 in} formula (PA-II) preferably have 1 to 40 carbon atoms, and examples thereof include alkyl groups, cycloalkyl groups, aryl groups, aralkyl groups, An alkenyl group etc. can be mentioned.
The alkyl group in Q ₁ and Q ₂ may have a substituent, preferably a linear or branched alkyl group having 1 to 30 carbon atoms, and an oxygen atom, sulfur atom, nitrogen atom in the alkyl chain You may have. Specifically, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-octyl group, n-dodecyl group, n-tetradecyl group, n-octadecyl group, etc. And a branched alkyl group such as isopropyl group, isopropyl group, isobutyl group, t-butyl group, neopentyl group, 2-ethylhexyl group.
The cycloalkyl group in Q ₁ and Q ₂ may have a substituent, preferably a cycloalkyl group having 3 to 20 carbon atoms, and may have an oxygen atom or a nitrogen atom in the ring. Good. Specific examples include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a norbornyl group, an adamantyl group, and the like.
The aryl group in Q ₁ and Q ₂ may have a substituent, and preferably an aryl group having 6 to 14 carbon atoms, such as a phenyl group and a naphthyl group.
The aralkyl group in Q ₁ and Q ₂ may have a substituent, and preferably an aralkyl group having 7 to 20 carbon atoms, such as a benzyl group, a phenethyl group, a naphthylmethyl group, or a naphthylethyl group. Is mentioned.
The alkenyl group for Q ₁ and Q ₂ may have a substituent, and examples thereof include a group having a double bond at an arbitrary position of the alkyl group.
Examples of the substituent that each group may have include, for example, a halogen atom, a hydroxyl group, a nitro group, a cyano group, a carboxy group, a carbonyl group, a cycloalkyl group (preferably having 3 to 10 carbon atoms), and an aryl group (preferably Has 6 to 14 carbon atoms, an alkoxy group (preferably 1 to 10 carbon atoms), an acyl group (preferably 2 to 20 carbon atoms), an acyloxy group (preferably 2 to 10 carbon atoms), an alkoxycarbonyl group (preferably C2-C20), an aminoacyl group (preferably C2-C10) etc. are mentioned. As for the cyclic structure in the aryl group, cycloalkyl group and the like, examples of the substituent further include an alkyl group (preferably having 1 to 10 carbon atoms). As for the aminoacyl group, examples of the substituent further include an alkyl group (preferably having a carbon number of 1 to 10). Examples of the alkyl group having a substituent include perfluoroalkyl groups such as a perfluoromethyl group, a perfluoroethyl group, a perfluoropropyl group, and a perfluorobutyl group.

One of the monovalent organic groups of Q ₁ and Q ₂ has a proton acceptor functional group.
The proton acceptor functional group is a group that can electrostatically interact with a proton or a functional group having a lone pair of electrons, such as a functional group having a macrocyclic structure such as a cyclic polyether, or π A functional group having a nitrogen atom having a lone electron pair with little conjugation contribution can be given. Examples of the nitrogen atom having a lone electron pair with little contribution of π conjugation include a nitrogen atom having a partial structure represented by the following general formula.

  Preferable partial structures of the proton acceptor functional group include, for example, crown ether, azacrown ether, tertiary amine, secondary amine, primary amine, pyridine, imidazole, pyrazine, aniline structure and the like. The group containing such a structure preferably has 4 to 30 carbon atoms, and examples thereof include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group. The alkyl group, cycloalkyl group, aryl group, aralkyl group and alkenyl group are the same as those mentioned above.

  Examples of the substituent that each group may have include, for example, a halogen atom, a hydroxyl group, a nitro group, a cyano group, a carboxy group, a carbonyl group, a cycloalkyl group (preferably having 3 to 10 carbon atoms), and an aryl group (preferably Has 6 to 14 carbon atoms, an alkoxy group (preferably 1 to 10 carbon atoms), an acyl group (preferably 2 to 20 carbon atoms), an acyloxy group (preferably 2 to 10 carbon atoms), an alkoxycarbonyl group (preferably C2-C20), an aminoacyl group (preferably C2-C20) etc. are mentioned. As for the cyclic structure in the aryl group, cycloalkyl group and the like, examples of the substituent further include an alkyl group (preferably having a carbon number of 1 to 20). As for the aminoacyl group, examples of the substituent further include an alkyl group (preferably having 1 to 20 carbon atoms).

  The proton acceptor functional group may be substituted with an organic group having a bond that is cleaved by an acid. Examples of the organic group having a bond that can be cleaved by an acid include an amide group, an ester group (preferably a tertiary alkyloxycarbonyl group), an acetal group (preferably a 1-alkyloxy-alkyloxy group), and a carbamoyl group. Group, carbonate group and the like.

Examples of the structure in which Q ₁ and Q ₂ are bonded to form a ring and the formed ring has a proton acceptor functional group include, for example, an organic group of Q ₁ and Q ₂ is further an alkylene group, an oxy group And a structure bonded with an imino group or the like.

In the general formula (PA-II), it is preferable that at least one of X ₁ and X ₂ is —SO 2 —.

  The compound represented by the general formula (PA-II) is preferably a compound represented by the following general formula (PA-III).

In general formula (PA-III),
Q ₁ and Q ₃ each independently represents a monovalent organic group. However, _one of Q ₁ and Q ₃ has a proton acceptor functional group. Q ₁ and Q ₃ may combine to form a ring, and the formed ring may have a proton acceptor functional group.
X ₁ , X ₂ and X ₃ each independently represent —CO— or —SO ₂ —.
A represents a divalent linking group.
B represents a single bond, an oxygen atom, or —N (Qx) —.
Qx represents a hydrogen atom or a monovalent organic group.
When B is —N (Qx) —, Q ₃ and Qx may combine to form a ring.
n represents 0 or 1.

Q ₁ has the same meaning as Q _{1 in} formula (PA-II).
Examples of the organic group of Q ₃ include the same organic groups as Q ₁ and Q ₂ in formula (PA-II).

  The divalent linking group in A is preferably a divalent linking group having 1 to 8 carbon atoms, for example, an alkylene group having 1 to 8 carbon atoms, a phenylene group having a fluorine atom. Etc. An alkylene group having a fluorine atom is more preferable, and a preferable carbon number is 2 to 6, more preferably 2 to 4. The alkylene chain may have a linking group such as an oxygen atom or a sulfur atom. The alkylene group is preferably an alkylene group in which 30 to 100% of the number of hydrogen atoms are substituted with fluorine atoms, more preferably a perfluoroalkylene group, and particularly preferably a perfluoroethylene group, a perfluoropropylene group, or a perfluorobutylene group. .

  The monovalent organic group in Qx is preferably an organic group having 4 to 30 carbon atoms, and examples thereof include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, and an alkenyl group. Examples of the alkyl group, cycloalkyl group, aryl group, aralkyl group, and alkenyl group are the same as those described above.

In the general formula (PA-III), X ₁ , X ₂ and X ₃ are preferably —SO ₂ —.

  Hereinafter, although the specific example of a compound represented by general formula (PA-II) is shown, this invention is not limited to this.

  As the compound (PA), a sulfonium salt compound of the compound represented by the general formula (PA-I), (PA-II) or (PA-III), the general formula (PA-I), (PA-II) or The iodonium salt compound of the compound represented by (PA-III) is preferable, and the compound represented by the following general formula (PA1) or (PA2) is more preferable.

In general formula (PA1):
R ₂₀₁ , R ₂₀₂ and R ₂₀₃ each independently represents an organic group.
X ⁻ represents a sulfonate anion or carboxylate anion from which a hydrogen atom of the —SO ₃ H site or —COOH site of the compound represented by the general formula (PA-I) is removed, or a general formula (PA-II) or (PA -III) represents an anion of the compound represented by

The carbon number of the organic group in R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is generally 1-30, preferably 1-20.
It is also possible to form the two members ring structure of the R ₂₀₁ to R _203, an oxygen atom, a sulfur atom, an ester bond, an amide bond, or a carbonyl group. The two of the group formed by bonding of the R ₂₀₁ to R _203, there can be mentioned an alkylene group (e.g., butylene, pentylene).
Specific examples of the organic group for R ₂₀₁ , R ₂₀₂ and R ₂₀₃ include the compound (A1a) described later.
, (A1b), and (A1c), the corresponding groups.
In addition, the compound which has two or more structures represented by general formula (PA1) may be sufficient. For example, at least one of R ₂₀₁ to R ₂₀₃ of the compound represented by the general formula (PA1) is, at least one bond with structure of R ₂₀₁ to R ₂₀₃ of another compound represented by formula (PA1) It may be a compound.

  As more preferred (PA1) component, compounds (A1a), (A1b), and (A1c) described below can be exemplified.

Compound (A1a) is at least one of the aryl groups R ₂₀₁ to R ₂₀₃ in formula (PA1), arylsulfonium compound, i.e., a compound having arylsulfonium as a cation.
In the arylsulfonium compound, all of R _{201 to} R ₂₀₃ may be an aryl group, or R ₂₀₁
Part of the to R ₂₀₃ is an aryl group with the remaining being an alkyl group or a cycloalkyl group.
Examples of the arylsulfonium compound include triarylsulfonium compounds, diarylalkylsulfonium compounds, diarylcycloalkylsulfonium compounds, aryldialkylsulfonium compounds, aryldicycloalkylsulfonium compounds, arylalkylcycloalkylsulfonium compounds, and the like.
The aryl group of the arylsulfonium compound is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. When the arylsulfonium compound has two or more aryl groups, the two or more aryl groups may be the same or different.
The alkyl group that the arylsulfonium compound has as necessary is preferably a linear or branched alkyl group having 1 to 15 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an n-butyl group, sec- Examples thereof include a butyl group and a t-butyl group.
The cycloalkyl group that the arylsulfonium compound has as necessary is preferably a cycloalkyl group having 3 to 15 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, and a cyclohexyl group.
Aryl group, alkyl group of R ₂₀₁ to R _203, cycloalkyl group, an alkyl group (for example, 1 to 15 carbon atoms), a cycloalkyl group (for example, 3 to 15 carbon atoms), an aryl group (for example, 6 to 14 carbon atoms) , An alkoxy group (for example, having 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, or a phenylthio group may be substituted. Preferred substituents are linear or branched alkyl groups having 1 to 12 carbon atoms, cycloalkyl groups having 3 to 12 carbon atoms, and linear, branched or cyclic alkoxy groups having 1 to 12 carbon atoms, most preferably They are a C1-C4 alkyl group and a C1-C4 alkoxy group. The substituent may be substituted on any one of three R ₂₀₁ to R _203, or may be substituted on all three. When R _{201 to} R ₂₀₃ are an aryl group, the substituent is preferably substituted at the p-position of the aryl group.

Next, the compound (A1b) will be described.
The compound (A1b) is a compound in which R _{201 to} R ₂₀₃ in the general formula (PA1) each independently represents an organic group having no aromatic ring. Here, the aromatic ring includes an aromatic ring having a hetero atom.
The organic group not having an aromatic ring in R ₂₀₁ to R _203, generally from 1 to 30 carbon atoms, preferably an organic group having 1 to 20 carbon atoms.
R _{201 to} R ₂₀₃ are each independently preferably an alkyl group, a cycloalkyl group, an allyl group or a vinyl group, more preferably a linear or branched 2-oxoalkyl group, 2-oxocycloalkyl group, An alkoxycarbonylmethyl group, particularly preferably a linear or branched 2-oxoalkyl group.
The alkyl group in R _{201 to} R ₂₀₃ may be linear or branched, and is preferably a linear or branched alkyl group having 1 to 20 carbon atoms (for example, methyl group, ethyl group, propyl group). Group, butyl group, pentyl group). The alkyl group as R ₂₀₁ to R ₂₀₃ is a straight-chain or branched 2-oxoalkyl group, an alkoxycarbonylmethyl group are preferred.
Preferred examples of the cycloalkyl group for R _{201 to} R ₂₀₃ include cycloalkyl groups having 3 to 10 carbon atoms (cyclopentyl group, cyclohexyl group, norbornyl group). The cycloalkyl group as R ₂₀₁ to R ₂₀₃ is a 2-oxocycloalkyl group is more preferable.
The linear or branched 2-oxoalkyl group in R _{201 to} R ₂₀₃ may have a double bond in the chain, and preferably has> C═O at the 2-position of the alkyl group. The group can be mentioned.
The 2-oxocycloalkyl group in R _{201 to} R ₂₀₃ may have a double bond in the chain, and preferably includes a group having> C═O at the 2-position of the cycloalkyl group. be able to.
The alkoxy group in the alkoxycarbonylmethyl group of R ₂₀₁ to R _203, preferably may be mentioned alkoxy groups having 1 to 5 carbon atoms (a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a pentoxy group).
R _{201 to} R ₂₀₃ may be further substituted with a halogen atom, an alkoxy group (eg, having 1 to 5 carbon atoms), an alkoxycarbonyl group (eg, having 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group. .

  The compound (A1c) is a compound represented by the following general formula (A1c), and is a compound having an arylacylsulfonium salt structure.

In general formula (A1c):
_R213 represents an aryl group which may have a substituent, and is preferably a phenyl group or a naphthyl group. Preferred substituents in R _213, an alkyl group, an alkoxy group, an acyl group, a nitro group, a hydroxyl group, an alkoxycarbonyl group and a carboxy group.
R ₂₁₄ and R ₂₁₅ each independently represents a hydrogen atom, an alkyl group or a cycloalkyl group.
Y ₂₀₁ and Y ₂₀₂ each independently represents an alkyl group, a cycloalkyl group, an aryl group, or a vinyl group.
X ⁻ represents a sulfonate anion or carboxylate anion from which a hydrogen atom of the —SO ₃ H site or —COOH site of the compound represented by the general formula (PA-I) is removed, or a general formula (PA-II) or (PA -III) represents an anion of the compound represented by
R ₂₁₃ and R ₂₁₄ may be bonded to form a ring structure, R ₂₁₄ and R ₂₁₅ may be bonded to form a ring structure, and Y ₂₀₁ and Y ₂₀₂ are bonded to each other. To form a ring structure. These ring structures may contain an oxygen atom, a sulfur atom, an ester bond, or an amide bond. Examples of the group R ₂₁₃ and R _214, R ₂₁₄ and R _215, Y ₂₀₁ and Y ₂₀₂ are formed by combined include a butylene group and a pentylene group.

As the alkyl group for R ₂₁₄ , R ₂₁₅ , Y _201, and Y ₂₀₂ , a linear or branched alkyl group having 1 to 20 carbon atoms is preferable. Examples of the alkyl group for Y ₂₀₁ and Y ₂₀₂ include a 2-oxoalkyl group having> C═O at the 2-position of the alkyl group, an alkoxycarbonylalkyl group (preferably an alkoxy group having 2 to 20 carbon atoms), and a carboxyalkyl group. More preferred.
The cycloalkyl group for R ₂₁₄ , R ₂₁₅ , Y ₂₀₁ and Y ₂₀₂ is preferably a cycloalkyl group having 3 to 20 carbon atoms.

Y ₂₀₁ and Y ₂₀₂ are preferably an alkyl group having 4 or more carbon atoms, more preferably an alkyl group having 4 to 6, and further preferably 4 to 12.
In addition, at least one of R ₂₁₄ or R ₂₁₅ is preferably an alkyl group, and more preferably both R ₂₁₄ and R ₂₁₅ are alkyl groups.

In the general formula (PA2),
_R204 and _R205 each independently represents an aryl group, an alkyl group or a cycloalkyl group.
X ⁻ represents a sulfonate anion or carboxylate anion from which a hydrogen atom of the —SO ₃ H site or —COOH site of the compound represented by the general formula (PA-I) is removed, or a general formula (PA-II) or (PA -III) represents an anion of the compound represented by

The aryl group of R ₂₀₄ and R _205, a phenyl group, a naphthyl group, more preferably a phenyl group.
The alkyl group in R ₂₀₄ and R ₂₀₅ may be either linear or branched, and is preferably a linear or branched alkyl group having 1 to 10 carbon atoms (for example, methyl group, ethyl group, propyl group). Group, butyl group, pentyl group).
Preferred examples of the cycloalkyl group for R ₂₀₄ and R ₂₀₅ include cycloalkyl groups having 3 to 10 carbon atoms (cyclopentyl group, cyclohexyl group, norbornyl group).
_R204 and _R205 may have a substituent. Examples of the substituent that R204 and R205 may have include, for example, an alkyl group (for example, 1 to 15 carbon atoms), a cycloalkyl group (for example, 3 to 15 carbon atoms), and an aryl group (for example, 6 to 15 carbon atoms). , Alkoxy groups (for example, having 1 to 15 carbon atoms), halogen atoms, hydroxyl groups, phenylthio groups, and the like.

  The compound that generates the compound represented by the general formula (PA-I), (PA-II), or (PA-III) upon irradiation with actinic rays or radiation is preferably represented by the general formula (PA1). A compound, more preferably compounds (A1a) to (A1c).

Compound (PA) decomposes upon irradiation with actinic rays or radiation to generate, for example, a compound represented by general formula (PA-1) or (PA-2).
The compound represented by the general formula (PA-1) has a sulfo group or a carboxyl group together with a proton acceptor functional group, so that the proton acceptor property is lowered or disappeared compared to the compound (PA), or the proton acceptor. It is a compound that has changed from scepter to acidic.
The compound represented by the general formula (PA-2) has an organic sulfonylimino group or an organic carbonylimino group together with a proton acceptor functional group, so that the proton acceptor property decreases and disappears compared to the compound (PA). Or a compound that is changed from proton acceptor property to acidity.
In the present invention, the acceptor property is lowered when the non-covalent complex which is a proton adduct is formed from a compound having a proton acceptor functional group and a proton, and the equilibrium constant in the chemical equilibrium is reduced. Means.
Proton acceptor property can be confirmed by measuring pH.

  Hereinafter, although the specific example of the compound (PA) which generate | occur | produces the compound represented with general formula (PA-I) by irradiation of actinic light or a radiation is given, this invention is not limited to this.

  These compounds are synthesized from a compound represented by the general formula (PA-I) or a lithium, sodium or potassium salt thereof and a hydroxide, bromide or chloride of iodonium or sulfonium. Or a salt exchange method described in JP-A No. 2003-246786.

  Hereinafter, although the specific example of the compound (PA) which generate | occur | produces the compound represented by general formula (PA-II) by irradiation of actinic light or a radiation is given, this invention is not limited to this.

These compounds can be easily synthesized by using a general sulfonic acid esterification reaction or sulfonamidation reaction. For example, one sulfonyl halide part of a bissulfonyl halide compound is selectively reacted with an amine or alcohol containing a partial structure represented by the general formula (PA-II) to form a sulfonamide bond or a sulfonate bond Then, the other sulfonyl halide moiety can be hydrolyzed, or the cyclic sulfonic acid anhydride can be opened by an amine or alcohol containing a partial structure represented by the general formula (PA-II). . An amine or alcohol containing a partial structure represented by the general formula (PA-II) is an amine, an alcohol such as (R′O ₂ C) ₂ O or an anhydride such as R′O ₂ CCl, acid It can be synthesized by reacting with a chloride compound.

  The content of the compound (PA) in the positive resist composition of the present invention is preferably 0.1 to 20% by mass, more preferably 0.1 to 10% by mass, based on the solid content of the composition.

[4] Organic Basic Compound The organic basic compound contained in the resist composition of the present invention is preferably a compound that is more basic than phenol. The molecular weight of the organic basic compound is usually 100 to 900, preferably 150 to 800, more preferably 200 to 700. Further, nitrogen-containing basic compounds are particularly preferable.

  Preferred nitrogen-containing basic compounds are compounds having structures of the following formulas (A) to (E) as a preferred chemical environment. Formulas (B) to (E) may be part of a ring structure.

Here, R ²⁵⁰ , R ²⁵¹ and R ²⁵² may be the same or different, and are a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 1 to 20 carbon atoms, or 6 to 20 carbon atoms. Wherein R ²⁵¹ and R ²⁵² may combine with each other to form a ring.

  The alkyl group may be unsubstituted or may have a substituent. Examples of the alkyl group having a substituent include an aminoalkyl group having 1 to 6 carbon atoms and a hydroxyalkyl group having 1 to 6 carbon atoms. preferable.

R ²⁵³ , R ²⁵⁴ , R ²⁵⁵ and R ²⁵⁶ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms.

  Further preferred compounds are nitrogen-containing basic compounds having two or more nitrogen atoms of different chemical environments in one molecule, and particularly preferably both a substituted or unsubstituted amino group and a ring structure containing a nitrogen atom. Or a compound having an alkylamino group.

  Preferred examples include guanidine, aminopyridine, aminoalkylpyridine, aminopyrrolidine, indazole, imidazole, pyrazole, pyrazine, pyrimidine, purine, imidazoline, pyrazoline, piperazine, aminomorpholine, aminoalkylmorpholine and the like. These may have a substituent, and preferred substituents include amino group, aminoalkyl group, alkylamino group, aminoaryl group, arylamino group, alkyl group, alkoxy group, acyl group, acyloxy group, aryl Group, aryloxy group, nitro group, hydroxyl group, cyano group and the like.

  Particularly preferred compounds include guanidine, 1,1-dimethylguanidine, 1,1,3,3-tetramethylguanidine, imidazole, 2-methylimidazole, 4-methylimidazole, N-methylimidazole, 2-phenylimidazole, 4 , 5-diphenylimidazole, 2,4,5-triphenylimidazole, 2-aminopyridine, 3-aminopyridine, 4-aminopyridine, 2-dimethylaminopyridine, 4-dimethylaminopyridine, 2-diethylaminopyridine, 2- (Aminomethyl) pyridine, 2-amino-3-methylpyridine, 2-amino-4-methylpyridine, 2-amino-5-methylpyridine, 2-amino-6-methylpyridine, 3-aminoethylpyridine, 4- Aminoethylpyridine, 3-aminopyrrolidine, Perazine, N- (2-aminoethyl) piperazine, N- (2-aminoethyl) piperidine, 4-amino-2,2,6,6-tetramethylpiperidine, 4-piperidinopiperidine, 2-iminopiperidine, 1- (2-aminoethyl) pyrrolidine, pyrazole, 3-amino-5-methylpyrazole, 5-amino-3-methyl-1-p-tolylpyrazole, pyrazine, 2- (aminomethyl) -5-methylpyrazine, Examples include, but are not limited to, pyrimidine, 2,4-diaminopyrimidine, 4,6-dihydroxypyrimidine, 2-pyrazoline, 3-pyrazoline, N-aminomorpholine, N- (2-aminoethyl) morpholine. It is not a thing.

A tetraalkylammonium salt type nitrogen-containing basic compound can also be used. Among these, tetraalkylammonium hydroxide having 1 to 8 carbon atoms (tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra- (
n-butyl) ammonium hydroxide and the like are preferred. These nitrogen-containing basic compounds are used alone or in combination of two or more.

  The use ratio of the acid generator and the organic basic compound in the composition is preferably acid generator / organic basic compound (molar ratio) = 2.5 to 300. In other words, the molar ratio is preferably 2.5 or more from the viewpoint of sensitivity and resolution, and is preferably 300 or less from the viewpoint of suppressing the reduction in resolution due to the thickening of the resist pattern over time until post-exposure heat treatment. The acid generator / organic basic compound (molar ratio) is more preferably 5.0 to 200, still more preferably 7.0 to 150.

[5] Surfactants In the present invention, surfactants can be used, which are preferable from the viewpoints of film-forming properties, pattern adhesion, development defect reduction, and the like.

  Specific examples of the surfactant include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene alkyl ethers such as polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, polyoxyethylene Polyoxyethylene alkyl allyl ethers such as nonylphenol ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate Sorbitan fatty acid esters such as rate, polyoxyethylene sorbitan monolaurate, polyoxyethylene Nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters such as bitane monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, Ftop EF301, EF303, EF352 (manufactured by Shin-Akita Kasei Co., Ltd.), Megafac F171, F173 (manufactured by Dainippon Ink and Chemicals), Florad FC430, FC431 (manufactured by Sumitomo 3M), Asahi Guard AG710, Surflon S-382, SC101, SC102, SC103, SC104, SC105, SC106 (manufactured by Asahi Glass Co., Ltd.), Troysol S-366 (manufactured by Troy Chemical Co., Ltd.), etc. Hexane polymer KP341 (manufactured by Shin-Etsu Chemical Co.) and acrylic or methacrylic acid-based (co) polymer Polyflow No. 75, no. 95 (manufactured by Kyoeisha Yushi Chemical Co., Ltd.). The compounding amount of these surfactants is usually 2 parts by mass or less, preferably 1 part by mass or less per 100 parts by mass of the solid content in the composition of the present invention.

  These surfactants may be added alone or in some combination.

  The surfactant is any one of fluorine and / or silicon surfactants (fluorine surfactants and silicon surfactants, surfactants containing both fluorine atoms and silicon atoms), or It is preferable to contain 2 or more types.

  As these surfactants, for example, JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, JP-A-62-170950, JP-A-63-34540 No. 7, JP-A-7-230165, JP-A-8-62834, JP-A-9-54432, JP-A-9-5988, JP-A 2002-277862, US Pat. No. 5,405,720. , No. 5,360,692, No. 5,529,881, No. 5,296,330, No. 5,543,098, No. 5,576,143, No. 5,294,511, No. 5,824,451. The following commercially available surfactants can also be used as they are.

Examples of commercially available surfactants that can be used include F-top EF301, EF303 (manufactured by Shin-Akita Kasei Co., Ltd.), Florard FC430, 431 (manufactured by Sumitomo 3M Co., Ltd.), MegaFuck F171, F173, F176, F189, R08 (Dainippon Ink Chemical Co., Ltd.), Surflon S-382, SC101, 102, 103, 104, 105, 106 (Asahi Glass Co., Ltd.), Troisol S-366 (Troy Chemical Co., Ltd.), etc. Fluorine type surfactant or silicon type surfactant can be mentioned. Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can also be used as a silicon-based surfactant.

  In addition to the known surfactants described above, surfactants are derived from fluoroaliphatic compounds produced by the telomerization method (also referred to as the telomer method) or the oligomerization method (also referred to as the oligomer method). A surfactant using a polymer having a fluoroaliphatic group can be used. The fluoroaliphatic compound can be synthesized by the method described in JP-A-2002-90991.

As the polymer having a fluoroaliphatic group, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate and / or (poly (oxyalkylene)) methacrylate is preferable and distributed irregularly. Or may be block copolymerized. Examples of the poly (oxyalkylene) group include a poly (oxyethylene) group, a poly (oxypropylene) group, a poly (oxybutylene) group, and the like, and a poly (oxyethylene, oxypropylene, and oxyethylene group). A unit having different chain lengths in the same chain length, such as a block linked body) or a poly (block linked body of oxyethylene and oxypropylene) group, may be used. Further, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate (or methacrylate) is 2
Not only the original copolymer but also a ternary system or more obtained by simultaneously copolymerizing monomers having two or more different fluoroaliphatic groups or two or more different (poly (oxyalkylene)) acrylates (or methacrylates). A copolymer may be used.

Examples of commercially available surfactants include Megafac F178, F-470, F-473, F-475, F-476, and F-472 (Dainippon Ink Chemical Co., Ltd.). Further, a copolymer of an acrylate (or methacrylate) having a C ₆ F ₁₃ group and (poly (oxyalkylene)) acrylate (or methacrylate), an acrylate (or methacrylate) having a C ₆ F ₁₃ group and (poly (oxy) A copolymer of (ethylene)) acrylate (or methacrylate) and (poly (oxypropylene)) acrylate (or methacrylate), an acrylate (or methacrylate) having a C ₈ F ₁₇ group and (poly (
Oxyalkylene)) acrylate (or methacrylate) copolymer, acrylate (or methacrylate), (poly (oxyethylene)) acrylate (or methacrylate) and (poly (oxypropylene)) acrylate having C ₈ F ₁₇ groups ( Or a copolymer with methacrylate).

The amount of the surfactant used is preferably 0.0001 to 2% by mass, more preferably 0.001 to 1% by mass, based on the total amount of the positive resist composition (excluding the solvent).
[6] Other components The positive resist composition of the present invention may further contain a dye, a photobase generator and the like, if necessary.

1. Dye A dye can be used in the present invention.

  Suitable dyes include oily dyes and basic dyes. Specifically, Oil Yellow # 101, Oil Yellow # 103, Oil Pink # 312, Oil Green BG, Oil Blue BOS, Oil Blue # 603, Oil Black BY, Oil Black BS, Oil Black T-505 (oriental chemical industry) Co., Ltd.), crystal violet (CI42555), methyl violet (CI42535), rhodamine B (CI45170B), malachite green (CI42000), methylene blue (CI522015) and the like.

2. Photobase generator As photobase generators that can be added to the composition of the present invention, JP-A-4-151156, JP-A-4-162040, JP-A-5-197148, JP-A-5-5995, JP-A-6-194835, Examples thereof include compounds described in JP-A-8-146608, JP-A-10-83079 and European Patent No. 622682, specifically, 2-nitrobenzylcarbamate, 2,5-dinitrobenzylcyclohexylcarbamate, N-cyclohexyl-4- Methylphenylsulfonamide, 1,1-dimethyl-2-phenylethyl-N-isopropylcarbamate and the like can be suitably used. These photobase generators are added for the purpose of improving the resist shape and the like.

[7] Solvent The resist composition of the present invention is usually dissolved in a solvent that dissolves each of the above components and coated on a support. The solid content concentration of all resist components is usually preferably 2 to 30% by mass, more preferably 3 to 25% by mass.

  Solvents include ethylene dichloride, cyclohexanone, cyclopentanone, 2-heptanone, γ-butyrolactone, methyl ethyl ketone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 2-methoxyethyl acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl. Ether, propylene glycol monomethyl ether acetate, toluene, ethyl acetate, methyl lactate, ethyl lactate, methyl methoxypropionate, ethyl ethoxypropionate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, N, N-dimethylformamide, dimethyl sulfoxide Organic solvents such as N-methylpyrrolidone and tetrahydrofuran are preferred. There will be used as a mixture.

[8] Pattern Formation Method The resist composition of the present invention is applied on a substrate to form a thin film. The thickness of the resist film is preferably 0.05 to 4.0 μm.

  In the present invention, a commercially available inorganic or organic antireflection film can be used if necessary. Furthermore, an antireflection film can be applied to the resist lower layer and used.

  As the antireflection film used as the lower layer of the resist, either an inorganic film type such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon, amorphous silicon, or an organic film type made of a light absorber and a polymer material may be used. it can. The former requires equipment such as a vacuum deposition apparatus, a CVD apparatus, and a sputtering apparatus for film formation. Examples of the organic antireflection film include a condensate of a diphenylamine derivative and a formaldehyde-modified melamine resin described in JP-B-7-69611, an alkali-soluble resin, a light absorber, and maleic anhydride copolymer described in US Pat. No. 5,294,680. A reaction product of a coalescence and a diamine type light absorbing agent, a resin binder described in JP-A-6-186863 and a methylolmelamine thermal crosslinking agent, a carboxylic acid group, an epoxy group and a light-absorbing group described in JP-A-6-118656. An acrylic resin-type antireflection film in the same molecule, a composition comprising methylol melamine and a benzophenone-based light absorber described in JP-A-8-87115, and a low-molecular light absorber added to a polyvinyl alcohol resin described in JP-A-8-179509 And the like.

  In addition, as the organic antireflection film, commercially available organic antireflection films such as DUV30 series, DUV-40 series manufactured by Brewer Science, AR-2, AR-3, AR-5 manufactured by Shipley, etc. may be used. it can.

  In the manufacture of precision integrated circuit elements, the pattern forming process on the resist film is carried out on the substrate (eg, silicon / silicon dioxide coated substrate, glass substrate, ITO substrate, quartz / chromium oxide coated substrate, etc.). A resist pattern is applied and dried to form a resist film, followed by irradiation with X-rays, electron beams, ion beams or EUV, preferably by heating, developing, rinsing and drying to form a good resist pattern can do.

  Examples of the alkaline developer of the resist composition of the present invention include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, ethylamine, n-propylamine and the like. Secondary amines such as amines, diethylamine and di-n-butylamine; tertiary amines such as triethylamine and methyldiethylamine; alcohol amines such as dimethylethanolamine and triethanolamine; tetramethylammonium hydroxide; tetraethylammonium An aqueous solution (usually 0.1 to 20% by mass) of an alkali such as a quaternary ammonium salt such as hydroxide or choline, a cyclic amine such as pyrrole or piperidine, or the like can be used. Furthermore, an appropriate amount of an alcohol such as isopropyl alcohol or a nonionic surfactant may be added to the alkaline aqueous solution.

  Among these developers, quaternary ammonium salts are preferable, and tetramethylammonium hydroxide and choline are more preferable.

  The alkali concentration of the alkali developer is usually from 0.1 to 20% by mass. The pH of the alkali developer is usually from 10.0 to 15.0.

  EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, the content of this invention is not limited by this.

  (Synthesis Example 1) Synthesis of polymer (P-1)

In a reaction vessel, 40.42 g (1.0 mol) of 3-oxoethyl-4-acetoxystyrene, 16.22 g of 4-acetoxystyrene, and 0.23 g of a polymerization initiator V- 601 (manufactured by Wako Pure Chemical Industries, Ltd.) 0.001 mol) was dissolved in 200 g of ethylene glycol monoethyl ether acetate and added dropwise to the system at 80 ° C. over 4 hours under a nitrogen gas atmosphere. After dropping, the reaction solution was allowed to cool to room temperature after stirring for 2 hours, and dropped into 3 L of hexane to precipitate the polymer. The filtered solid was dissolved in 200 ml of acetone, dropped again into 5 L of hexane, and the filtered solid was dried under reduced pressure to obtain 48.14 g of 3-oxoethyl-4-acetoxystyrene / 4-acetoxystyrene copolymer .

  40.00 g of the polymer obtained above, 40 ml of methanol, 100 ml of 1-methoxy-2-propanol and 1.5 ml of concentrated hydrochloric acid were added to the reaction vessel, heated to 80 ° C. and stirred for 5 hours. The reaction solution was allowed to cool to room temperature and dropped into 3 L of distilled water. The filtered solid was dissolved in 200 ml of acetone, dropped again into 3 L of distilled water, and the filtered solid was dried under reduced pressure to obtain 29.31 g of polymer (P-1). The weight average molecular weight by GPC was 8000, and the molecular weight dispersity (Mw / Mn) was 1.35.

  In a reaction vessel, 20.00 g of the polymer obtained above was dissolved in 100 g of PGMEA, this solution was decompressed to 60 mm and 20 mmHg, and about 20 g of the solvent was distilled off with the remaining water in the system. The mixture was cooled to 20 ° C., 4.03 g of 2- (4-cyclohexylphenoxy) ethyl vinyl ether and 0.02 g of p-toluenesulfonic acid were added, and the mixture was stirred at room temperature for 2 hours. Thereafter, 0.03 g of triethylamine was added for neutralization, and 300 g of ethyl acetate and 100 g of water were added for washing operation three times. Thereafter, the amount of the solvent was adjusted to obtain a 30% by mass polymer solution. The weight average molecular weight by GPC was 9500, the molecular weight dispersity was 1.35, and the acetal protection rate of phenolic OH was 14.1% from 1H and 13C-NMR analysis.

  Polymers shown in Tables 2 to 3 were synthesized in the same manner as in Synthesis Example 1 except that the monomer and vinyl ether used were changed.

  P-1 to P-26 shown in Tables 2 to 3 are resins having the constitution of repeating units exemplified as P-1 to P-26, and the composition ratios shown in Tables 2 to 3 are exemplified first. The molar ratio of the repeating units in the order from the left in the constitution of the repeating units. In Table 3, P-6-1 is a resin having the structure of the repeating unit exemplified as P-6, and so on.

  Resin H-1 used as a comparative resin is the following resin.

(Synthesis Example 2) Synthesis of 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate (A1) 10 g of thioxanthen-9-one was stirred in 40 ml of trifluoroacetic acid, and 30% under ice cooling. A solution obtained by mixing 5.4 ml of hydrogen peroxide and 10.8 ml of trifluoroacetic acid was slowly added. Thereafter, the mixture was stirred for 30 minutes under ice cooling, and then stirred at room temperature for 1 hour. Further, the reaction solution was poured into water, and the precipitated crystals were collected by filtration. The obtained crystals were recrystallized from acetonitrile to obtain 4.6 g of a sulfoxide form. 3 g of the sulfoxide compound was stirred in 20 ml of toluene, and 3.7 ml of trifluoroacetic anhydride and 2.2 ml of nonafluorobutanesulfonic acid were added under ice cooling. The reaction was gradually warmed to room temperature and stirred for 1 hour. Diisopropyl ether was added to the reaction solution to precipitate crystals, which were recrystallized with a mixed solvent of ethyl acetate and diisopropyl ether to give 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate (A1) 3 .9 g was obtained.
¹ H-NMR (400 MHz, CDCl ₃ σ2.38 (s, 3H), 7.34 (d, 2H), 7.72 (m, 2H), 7.95 (m, 4H), 8.28 (m, 2H), 8.63 (d, 2H)

Synthesis Example 3 Synthesis of 10-Tolyl-9-oxothioxanthenium 3,5-bistrifluoromethylbenzenesulfonate (A2) 10-Tolyl-9-oxothioxanthenium obtained in Synthesis Example 1 To 1.5 g of nonafluorobutane sulfonate (A1), 1.5 g of 10-tolyl-9-oxothioxanthenium nonafluorobutane sulfonate is dissolved in a methanol / water = 1/1 solution to obtain an ion exchange resin. 10-tolyl-9- in which the counter salt was changed by adding 1 g of 3,5-bistrifluoromethylbenzenesulfonic acid through passing through (amberlite IRA402Cl in which the anion was substituted with OH with NaOH water) and extracting with chloroform. 1.7 g of oxothioxanthenium 3,5-bistrifluoromethylbenzenesulfonate (A2) was obtained.
¹ H-NMR (400 MHz, CDCl ₃ ) σ2.37 (s, 3H), 7.34 (d, 2H), 7.79 (m, 3H), 7.93 (m, 4H), 8.34 (m, 4H), 8.62 (d , 2H)

Synthesis Example 4 Synthesis of 2-acetyl-10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate (A8) 15 g of thiosalicylic acid, 20 g of 4-bromoacetophenone, 12 g of sodium carbonate and 0.2 g of a copper catalyst Was stirred in 170 ml of dimethylformamide at 200 ° C. for 6 hours, and the reaction solution was poured into an aqueous hydrochloric acid solution and collected by filtration. The obtained crystals were recrystallized from acetonitrile to obtain 16 g of sulfide. 10 g of the obtained sulfide was stirred in 60 g of polyphosphoric acid at 60 ° C. for 5 hours and then poured into ice water. The crystals were collected by filtration, washed with an aqueous sodium hydrogen carbonate solution and water, and recrystallized with ethanol to obtain 5 g of 2-acetyl-9H-thioxan-9-one. Further, 3 g of the obtained 2-acetyl-9H-thioxan-9-one was stirred in 12 ml of trifluoroacetic acid under ice-cooling, and a mixed solution of 1.4 ml of 30% hydrogen peroxide and 2.7 ml of trifluoroacetic acid was slowly added. added. After the addition, the mixture was stirred for 30 minutes under ice cooling, followed by stirring at room temperature for 1 hour to complete the reaction. The reaction solution was poured into water, and separated with ethyl acetate and an aqueous sodium hydroxide solution, and the organic layer was distilled off under reduced pressure to obtain 3.6 g of a sulfoxide form. It was stirred in 15 g of toluene, 3.3 ml of trifluoroacetic anhydride and 1.9 ml of nonafluorobutanesulfonic acid were added under ice cooling, and the mixture was stirred at room temperature for 30 minutes and at room temperature for 1 hour. Diisopropyl ether was added to the reaction solution for crystallization, and the resulting crystals were recrystallized with a mixed solvent of ethyl acetate and diisopropyl ether to give 2-acetyl-10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonic acid. 1 g of salt (A8) was obtained.
¹ H-NMR (400 MHz, CDCl ₃ ) σ2.39 (s, 3H), 2.74 (s, 3H), 7.37 (d, 2H), 7.72 (m, 2H), 7.97 (m, 2H), 8.19 (m , 1H), 8.39 (m, 2H), 8.67 (d, 1H), 9.09 (s, 1H)

  Other sulfonium salts (A) were synthesized in the same manner.

In the following, Examples 3 to 5, 7 to 12, 16 to 18, 20, 21, 23 to 27, 31, 32, 36, 37, 41, 42, 46, 47, 52 to 54, 57 to 59, 62 -64, 66-72, 74, 77-79, 83-85 are reference examples.
(Preparation of resist composition)
Shown in Table 4,
Resin of the present invention: 0.948 g (solid content conversion)
Acid generator: 0.05g
Organic basic compound: 0.003 g
Surfactant: 0.002g
Was dissolved in 16.79 g of propylene glycol monomethyl ether acetate to prepare a solution having a solid content concentration of 5.0% by mass. This solution was filtered through a 0.1 μm polytetrafluoroethylene filter to obtain positive resist solutions of Examples 1 to 25 and 66 to 77 and Comparative Examples.
Shown in Table 5,
Resin: 17.1653g
Acid generator: 0.1479 g
Basic compound: 0.0393 g
Surfactant: 0.4020 g
Was dissolved in propylene glycol monomethyl ether acetate to prepare a solution having a solid content concentration of 5.0% by mass, and the obtained solution was subjected to microfiltration with a membrane filter having a 0.1 μm aperture, and Examples 26 to 50, 78 were prepared. A positive resist solution of -82 was obtained.
Shown in Table 6,
Resin: 17.1653g
Acid generator: 0.1479 g
Basic compound or proton acceptor functional group-containing compound: 0.0393 g
Surfactant: 0.4020 g
Was dissolved in propylene glycol monomethyl ether acetate to prepare a solution having a solid content concentration of 5.0% by mass, and the obtained solution was microfiltered with a membrane filter having a 0.1 μm aperture, and Examples 51 to 65, 83 were obtained. A positive resist solution of -85 was obtained. However, when the proton acceptor functional group-containing compound and the basic compound were used in combination, the proton acceptor group-containing compound was 0.0196 g and the basic compound was 0.0196 g.

[Pattern preparation and evaluation (EB)]
Using a spin coater, the positive resist solution prepared as described above is uniformly coated on a silicon wafer that has been subjected to hexamethyldisilazane treatment, and is heated and dried at 120 ° C. for 90 seconds to form a positive film having a thickness of 0.3 μm. A mold resist film was formed. The resist film was irradiated with an electron beam using an electron beam drawing apparatus (HL750 manufactured by Hitachi, Ltd., acceleration voltage 50 KeV). After irradiation, it was baked at 110 ° C. for 90 seconds, immersed in an aqueous 2.38 mass% tetramethylammonium hydroxide (TMAH) solution for 60 seconds, rinsed with water for 30 seconds and dried. The obtained pattern was evaluated by the following method.

〔sensitivity〕
The cross-sectional shape of the obtained pattern was observed using a scanning electron microscope (S-4300, manufactured by Hitachi, Ltd.). The minimum irradiation energy when resolving a 150 nm line (line: space = 1: 1) was defined as sensitivity.
[Resolution]
The resolving power was defined as the limiting resolving power (line and space were separated and resolving) at the irradiation dose showing the above sensitivity.

[Pattern shape]
Using a scanning electron microscope (S-4300, manufactured by Hitachi, Ltd.), observe the cross-sectional shape of the 0.15 μm line pattern at the irradiation dose showing the above sensitivity, and perform a three-step evaluation of rectangular, slightly tapered, and tapered. It was.
[Line edge roughness]
The distance from the reference line where there should be an edge using a scanning electron microscope (S-9220, manufactured by Hitachi, Ltd.) at any 30 points in the length direction of 50 μm of the 150 nm line pattern at the irradiation dose showing the sensitivity described above. Was measured, the standard deviation was obtained, and 3σ was calculated.
(Pattern profile)
A cross section of a part having a line width of 150 nm (line / space = 1: 1) was observed with an SEM (S-8840, manufactured by Hitachi, Ltd.) and evaluated according to the following criteria.

A: When the angle between the pattern side wall and the substrate is 90 ± 2 degrees and the angle between the pattern side wall and the pattern surface is 90 ± 2 degrees B: The angle between the pattern side wall and the substrate is 85 degrees or more and less than 88 degrees Alternatively, when the angle between the pattern side wall and the pattern surface is not less than 92 degrees and less than 95 degrees, and the angle between the pattern side wall and the pattern surface is not less than 85 degrees and less than 88 degrees, or not less than 92 degrees and less than 95 degrees. When it is 95 degrees or more, when the T-top shape is seen or when the entire pattern surface is rounded, the results are shown in Tables 4-6.

[Acid generator]
The symbols correspond to the compounds exemplified above.
[Basic compounds]
E-1: Tri-n-hexylamine E-2: 2,4,6-triphenylimidazole E-3: Tetra- (n-butyl) ammonium hydroxide [surfactant]
W-1: Fluorosurfactant, MegaFuck F-176 (Dainippon Ink Chemical Co., Ltd.)
W-2: Fluorine / silicone surfactant, MegaFac R08 (Dainippon Ink and Chemicals)
W-3: Silicone surfactant, polysiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.)

  From the results of Tables 4 to 6, the resist composition of the present invention relates to pattern formation by electron beam irradiation, and has higher sensitivity and higher resolution than the composition of the comparative example, line edge roughness, pattern shape, and pattern. It can be seen that the profile is excellent.

An antireflection film DUV-44 manufactured by Nissan Chemical Co., Ltd. was baked on an 8-inch silicon wafer at 200 ° C. for 60 seconds using a spin coater ACT8 manufactured by Tokyo Electron to obtain a film having an average film thickness of 0.06 μm. Thereafter, the resist solution was applied onto the film and baked at 120 ° C. for 60 seconds to obtain a resist film having an average film thickness of 0.40 μm.
The obtained resist film was subjected to pattern exposure using a KrF excimer laser stepper (FPA3000EX-5 manufactured by Canon Inc., wavelength 248 nm). The post-exposure processing was performed in the same manner as in Example 1. The results are shown in Tables 7-9 below.
In Tables 7 to 9, Examples 3 to 5, 7 to 12, 16 to 18, 20, 21, 23 to 27, 31, 32, 36, 37, 41, 42, 46, 47, 52 to 54, 57 -59, 62-64, 66-72, 74, 77-79, 83-85 are reference examples.

  From Tables 7 to 9, the positive resist composition of the present invention is higher in sensitivity and resolution than the comparative example with respect to pattern formation by KrF excimer laser exposure, and has excellent pattern shape, pattern profile, and line edge roughness. You can see that

Example: Exposure by EUV
In the following, Examples 3 to 5, 7 to 12, 16 to 18, 20, 21, 23 to 27, 31, 32, 36, 37, 41, 42, 46, 47, 52 to 54, 57 to 59 62-64, 66-72, 74, 77-79, 83-85 are reference examples.
(Preparation of resist composition)
Shown in Table 10,
Resin of the present invention: 0.948 g (solid content conversion)
Acid generator: 0.05g
Organic basic compound: 0.003 g
Surfactant: 0.002g
Was dissolved in 16.79 g of propylene glycol monomethyl ether acetate to prepare a solution having a solid content concentration of 5.0% by mass. This solution was filtered through a 0.1 μm polytetrafluoroethylene filter to obtain positive resist solutions of Examples 1 to 25, 66 to 77 and Comparative Examples 1 to 3.
Shown in Table 11,
Resin: 17.1653g
Acid generator: 0.1479 g
Basic compound: 0.0393 g
Surfactant: 0.4020 g
Was dissolved in propylene glycol monomethyl ether acetate to prepare a solution having a solid content concentration of 5.0% by mass, and the obtained solution was subjected to microfiltration with a membrane filter having a 0.1 μm aperture, and Examples 26 to 50, 78 were prepared. A positive resist solution of -82 was obtained.
Shown in Table 12,
Resin: 17.1653g
Acid generator: 0.1479 g
Basic compound or proton acceptor functional group-containing compound: 0.0393 g
Surfactant: 0.4020 g
Was dissolved in propylene glycol monomethyl ether acetate to prepare a solution having a solid content concentration of 5.0% by mass, and the obtained solution was microfiltered with a membrane filter having a 0.1 μm aperture, and Examples 51 to 65, 83 were obtained. A positive resist solution of -85 was obtained. However, when the proton acceptor functional group-containing compound and the basic compound were used in combination, the proton acceptor group-containing compound was 0.0196 g and the basic compound was 0.0196 g.

[Pattern preparation and evaluation (EUV)]
Using a spin coater, the positive resist solution prepared as described above is uniformly applied on a silicon wafer that has been subjected to hexamethyldisilazane treatment, and is heated and dried at 120 ° C. for 90 seconds to obtain a positive film having a thickness of 0.15 μm. A mold resist film was formed. The obtained resist film was subjected to surface exposure using EUV light (wavelength 13 nm) while changing the exposure amount in steps of 0.5 mJ within a range of 0 to 10.0 mJ, and further baked at 110 ° C. for 90 seconds. Then, using a 2.38 mass% tetramethylammonium hydroxide (TMAH) aqueous solution, the dissolution rate at each exposure amount was measured to obtain a sensitivity curve. In this sensitivity curve, the exposure amount when the dissolution rate of the resist is saturated was taken as sensitivity, and the dissolution contrast (γ value) was calculated from the gradient of the linear portion of the sensitivity curve. The larger the γ value, the better the dissolution contrast. Separately, the resist was adjusted to a film thickness of 0.3 μm, and the film thickness after exposure with respect to the film thickness before 5 mJ / cm ² exposure was measured and evaluated as the amount of outgas.

[Surface roughness]
The resist film obtained in the same manner as above was subjected to surface exposure using EUV light, further baked at 110 ° C. for 90 seconds, and immersed in an aqueous 2.38 mass% tetramethylammonium hydroxide (TMAH) solution for 60 seconds. Rinse with water for 30 seconds and dry. Thereafter, the resist film surface was observed with an AFM (atomic force microscope).

[Evaluation of film thickness fluctuation rate after exposure (outgas)]
Irradiate a dose of 2.0 times the dose (mJ / cm ² ) with the sensitivity determined by performing surface exposure with EUV light, measure the film thickness after exposure (before post-heating), and use the following formula: From this, the rate of change from the unexposed film thickness was determined.
Film thickness fluctuation rate = (film thickness at unexposed-film thickness after exposure) / film thickness at unexposed

  The evaluation results are shown in Tables 10-12.

  From the results of Tables 10 to 12, it can be seen that the positive resist composition of the present invention is excellent in sensitivity, surface roughness, and outgas in property evaluation by irradiation with EUV light.

Table 10 Acid Generator B'1: Triphenylsulfonium Pentafluorobenzenesulfonate
Boiling point of decomposition product (benzene): 80.2 ° C (document value)

分解物（プロピルベンゼン）の沸点：１５９．２℃（文献値）

Decomposition product (propylbenzene) boiling point: 159.2 ° C (literature value)

Claims (9)

(A) It contains at least the repeating unit represented by formula (I), is insoluble or hardly soluble in an alkali developer, has a property of being soluble in an alkali developer by the action of an acid, and has a weight average molecular weight (Mw ) Is in the range of 1,000 to 8,000,
(B) A positive resist composition comprising a sulfonium compound which generates an acid upon irradiation with actinic rays or radiation and has a cation represented by formula (II).

X represents a hydrogen atom or an organic group.
Y represents a hydrogen atom or an organic group.
Z represents a non-acid-decomposable group.
Ra, Rb, Rc and Rd are each independently a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, Represents an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group;
m is an integer of 1 to 4, n is an integer of 1 to 4, k is an integer of 0 to 3, and 2 ≦ m + n + k ≦ 5.
When m is 2 to 4, the plurality of X may be the same or different, and when n is 2 to 4, the plurality of Y, Rc, and Rd may be the same or different.
n1 represents an integer of 0 to 10.

In general formula (II),
R ^{1 to} R ¹³ each independently represent a hydrogen atom or a substituent, and may be bonded to each other to form a ring.
Z is a single bond or a divalent linking group. 2. The positive resist composition according to claim 1, wherein the repeating unit represented by the general formula (I) is a repeating unit represented by the formula (Ia).

X represents a hydrogen atom or an organic group.
Y represents a hydrogen atom or an organic group.
Z represents a non-acid-decomposable group.
Ra, Rb, Rc and Rd are each independently a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, Represents an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group;
n is an integer of 1 to 4, k is an integer of 0 to 3, and 1 ≦ n + k ≦ 4.
When n is 2 to 4, the plurality of Y, Rc, and Rd may be the same or different.
n1 represents an integer of 0 to 10. 2. The positive resist composition according to claim 1, wherein the repeating unit represented by the general formula (I) is a repeating unit represented by the formula (Ib).

X represents a hydrogen atom or an organic group.
Y represents a hydrogen atom or an organic group.
Z represents a non-acid-decomposable group.
Ra, Rb, Rc and Rd are each independently a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, Represents an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group;
k is an integer of 0-3.
n1 represents an integer of 0 to 10.   The positive resist composition according to claim 1, wherein the resin (A) has a weight average molecular weight (Mw) in the range of 1,000 to 6,000.   The positive resist composition according to any one of claims 1 to 3, wherein the resin (A) has a weight average molecular weight (Mw) in the range of 1,000 to 4,000. A compound represented by the following general formula (K) (in general formula (K), which corresponds to a decomposition product generated when the compound represented by general formula (II) generates an acid upon irradiation with actinic rays or radiation ) R ⁹ to R ¹³ are each the general formula (II) is identical to ^R 9 ^{to R 13} in the compound represented by. boiling point at 1 atm) is according to claim 1, wherein at 160 ° C. or higher A positive resist composition according to claim 1.

  The resist film formed with the positive resist composition as described in any one of Claims 1-6.   A pattern forming method comprising exposing and developing the resist film according to claim 7.   The pattern forming method according to claim 8, wherein the exposure is performed by irradiating with an electron beam or EUV.