JP4814108B2 - センシティブなコンポーネント構造体を有するコンポーネント及びその製造のための方法 - Google Patents
センシティブなコンポーネント構造体を有するコンポーネント及びその製造のための方法 Download PDFInfo
- Publication number
- JP4814108B2 JP4814108B2 JP2006549982A JP2006549982A JP4814108B2 JP 4814108 B2 JP4814108 B2 JP 4814108B2 JP 2006549982 A JP2006549982 A JP 2006549982A JP 2006549982 A JP2006549982 A JP 2006549982A JP 4814108 B2 JP4814108 B2 JP 4814108B2
- Authority
- JP
- Japan
- Prior art keywords
- component
- shunt
- shunt line
- lines
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 38
- 239000004020 conductor Substances 0.000 claims description 31
- 238000001465 metallisation Methods 0.000 claims description 23
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000011796 hollow space material Substances 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- 239000002184 metal Substances 0.000 description 9
- 230000006378 damage Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 210000001520 comb Anatomy 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Micromachines (AREA)
Description
図2は本発明のシャント線路を有する特殊なコンポーネントの基板を示し、
図3は複数のシャント線路を有するコンポーネント構造体を示し、
図4はウェハ上の本発明の金属被覆層を示し、
図5は複数のシャント線路を有するコンポーネント構造体を示し、
図6は溶断の前の複数の互いに接続されたシャント線路を示し(図6A)及び溶断の後の複数の互いに接続されたシャント線路を示し(図6B)、
図7はフローティング金属被覆層を橋絡するシャント線路を有するコンポーネント構造体を示す。
AF 端子面
S 基板
LB 導体路
SL シャント線路
RA 断面積の低減された区間
BD ボンディングワイヤ
KF コンタクト面
SK 切断エッジ
P パッド
FS フローティング金属構造体
Claims (6)
- ESDに対してセンシティブな電気的コンポーネントの製造のための方法において、
基板上に又は基板内に電気的導体路を有するコンポーネント構造体をパターン化された金属被覆層の塗付によって形成し、
コンポーネント機能に必要な金属被覆層に加えて少なくとも2つのシャント線路を形成し、該シャント線路は完成されたコンポーネント内で電気的に互いに分離された2つのコンポーネント構造体を電気的に短絡するものであり、ここで、該シャント線路は、外部からアクセス可能な2つの電気的端子面の間に延在し、かつ、該シャント線路の断面積が電気的導体路の断面積よりも低減された少なくとも1つの区間を備えており、
少なくとも3つの電気的端子面と、基板と、コンポーネント構造体とを含んでいるコンポーネントを完成し、
コンポーネントを完成の後でパッケージング又はカプセル化し、
パッケージング又はカプセル化の後でシャント線路に接続された2つの端子に電流を印加し、該電流により低減された断面積を有する区間を溶断し、短絡を除去するものであり、ここで、シャント線路を断線するまで電流を高めて印加し、次いで端子に印加される電圧を除去することにより、溶断をコントロールする、
ESDに対してセンシティブな電気的コンポーネントの製造のための方法。 - 複数のシャント線路を形成し、これらの複数のシャント線路を複数のステップで相応の端子対に電流をシーケンシャルに印加することによって溶断する、請求項1記載の方法。
- シャント線路を電気的導体路及び/又は導電性コンポーネント構造体の発生のための最初の金属被覆とともに形成する、請求項1または2記載の方法。
- 低減された断面積を有するシャント線路の区間を完成されたコンポーネントにおいてカバーされていない表面上に又は少なくとも1つの中空スペース内に設ける、請求項1〜3のうちの1項記載の方法。
- 金属被覆を基板としてのウェハ上の複数のコンポーネント領域において実施し、ウェハを完成の後で個々のコンポーネントに切り分け、ここで、シャント線路はそれぞれコンポーネント領域内部のコンポーネント構造体だけを短絡させる、請求項1〜4のうちの1項記載の方法。
- 複数のシャント線路がコンポーネントの各2つの端子面の間に設けられており、該シャント線路は各2つの端子面における電流の印加の間互いに独立に分離されている、請求項1〜4のうちの1項記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004005129.1A DE102004005129B4 (de) | 2004-02-02 | 2004-02-02 | Bauelement mit empfindlichen Bauelementstrukturen und Verfahren zur Herstellung |
DE102004005129.1 | 2004-02-02 | ||
PCT/EP2005/000328 WO2005074028A1 (de) | 2004-02-02 | 2005-01-14 | Bauelement mit empfindlichen bauelementstrukturen und verfahren zur herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007520949A JP2007520949A (ja) | 2007-07-26 |
JP4814108B2 true JP4814108B2 (ja) | 2011-11-16 |
Family
ID=34801449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006549982A Expired - Fee Related JP4814108B2 (ja) | 2004-02-02 | 2005-01-14 | センシティブなコンポーネント構造体を有するコンポーネント及びその製造のための方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7411291B2 (ja) |
JP (1) | JP4814108B2 (ja) |
KR (1) | KR101270062B1 (ja) |
DE (1) | DE102004005129B4 (ja) |
WO (1) | WO2005074028A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7582952B2 (en) * | 2006-02-21 | 2009-09-01 | Qualcomm Mems Technologies, Inc. | Method for providing and removing discharging interconnect for chip-on-glass output leads and structures thereof |
DE102006039515B4 (de) * | 2006-08-23 | 2012-02-16 | Epcos Ag | Drehbewegungssensor mit turmartigen Schwingstrukturen |
DE102006048879B4 (de) * | 2006-10-16 | 2018-02-01 | Snaptrack, Inc. | Elektroakustisches Bauelement |
US8633552B1 (en) * | 2007-03-01 | 2014-01-21 | Micrel, Incorporated | ESD protection for MEMS resonator devices |
DE102008029094A1 (de) * | 2007-06-21 | 2009-01-02 | Epcos Ag | Vorrichtung und Modul zum Schutz vor Blitzen und Überspannungen |
US10365303B2 (en) * | 2016-04-28 | 2019-07-30 | Texas Instruments Incorporated | Shunt strip |
US10677822B2 (en) * | 2016-09-27 | 2020-06-09 | Analog Devices Global Unlimited Company | Electrical overstress detection device |
US11112436B2 (en) | 2018-03-26 | 2021-09-07 | Analog Devices International Unlimited Company | Spark gap structures for detection and protection against electrical overstress events |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6384202A (ja) * | 1986-09-27 | 1988-04-14 | Toshiba Corp | 弾性表面波装置の製造方法 |
JPH11298289A (ja) * | 1998-04-13 | 1999-10-29 | Toyo Commun Equip Co Ltd | 弾性表面波装置 |
JP2003152130A (ja) * | 2001-11-16 | 2003-05-23 | Tdk Corp | 集積回路装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3033323A1 (de) * | 1979-09-11 | 1981-03-26 | Rohm Co. Ltd., Kyoto | Schutzvorrichtung fuer eine halbleitervorrichtung |
JPS594215A (ja) * | 1982-06-29 | 1984-01-11 | Fujitsu Ltd | 弾性表面波装置 |
JP3124144B2 (ja) * | 1993-01-27 | 2001-01-15 | 株式会社東芝 | 半導体装置 |
DE4307726C1 (de) | 1993-03-11 | 1994-07-28 | Siemens Matsushita Components | Mit akustischen Oberflächenwellen arbeitendes Bauelement |
KR0157345B1 (ko) * | 1995-06-30 | 1998-12-01 | 김광호 | 반도체 메모리 소자의 전기 휴즈셀 |
DE19743344C2 (de) | 1997-09-30 | 1999-08-05 | Siemens Ag | Verfahren zur Montage integrierter Schaltkreise mit Schutz der Schaltkreise vor elektrostatischer Entladung und entsprechende Anordnung von integrierten Schaltkreisen mit Schutz vor elektrostatischer Entladung |
KR100267107B1 (ko) | 1998-09-16 | 2000-10-02 | 윤종용 | 반도체 소자 및 그 제조방법 |
JP2000311959A (ja) * | 1999-04-27 | 2000-11-07 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
DE10000746A1 (de) | 2000-01-11 | 2001-07-12 | Epcos Ag | Bauelement mit Ableitung für Pyrospannungen und Herstellverfahren |
US6356433B1 (en) * | 2000-03-03 | 2002-03-12 | The Regents Of The University Of California | Conducting polymer ultracapacitor |
JP3435639B2 (ja) * | 2000-04-13 | 2003-08-11 | 株式会社村田製作所 | 弾性表面波装置の製造方法及び弾性表面波装置 |
JP3382920B2 (ja) * | 2000-06-30 | 2003-03-04 | 沖電気工業株式会社 | 共振器型弾性表面波フィルタ |
DE10220347A1 (de) | 2002-05-07 | 2003-11-20 | Epcos Ag | Anordnung mit Pyroschutz |
-
2004
- 2004-02-02 DE DE102004005129.1A patent/DE102004005129B4/de not_active Expired - Fee Related
-
2005
- 2005-01-14 WO PCT/EP2005/000328 patent/WO2005074028A1/de active Application Filing
- 2005-01-14 JP JP2006549982A patent/JP4814108B2/ja not_active Expired - Fee Related
-
2006
- 2006-07-24 US US11/491,594 patent/US7411291B2/en active Active
- 2006-09-01 KR KR1020067017823A patent/KR101270062B1/ko active IP Right Grant
-
2008
- 2008-07-09 US US12/169,750 patent/US7998805B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6384202A (ja) * | 1986-09-27 | 1988-04-14 | Toshiba Corp | 弾性表面波装置の製造方法 |
JPH11298289A (ja) * | 1998-04-13 | 1999-10-29 | Toyo Commun Equip Co Ltd | 弾性表面波装置 |
JP2003152130A (ja) * | 2001-11-16 | 2003-05-23 | Tdk Corp | 集積回路装置 |
Also Published As
Publication number | Publication date |
---|---|
US20060284307A1 (en) | 2006-12-21 |
DE102004005129A1 (de) | 2005-08-18 |
US20090011554A1 (en) | 2009-01-08 |
JP2007520949A (ja) | 2007-07-26 |
US7411291B2 (en) | 2008-08-12 |
KR101270062B1 (ko) | 2013-05-31 |
WO2005074028A1 (de) | 2005-08-11 |
KR20060132712A (ko) | 2006-12-21 |
US7998805B2 (en) | 2011-08-16 |
DE102004005129B4 (de) | 2018-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101270062B1 (ko) | 민감성 구조물을 포함하는 소자 및 그의 제조 방법 | |
US9266722B2 (en) | ESD protection for MEMS resonator devices | |
US11476245B2 (en) | ESD protection of MEMS for RF applications | |
US9065420B2 (en) | Fabrication method of acoustic wave device | |
EP0510900A2 (en) | Wetting-based breakable links | |
JP2010061976A (ja) | スイッチ及びesd保護素子 | |
JP7325384B2 (ja) | 半導体装置の製造方法 | |
CN107808865B (zh) | 抗短路芯片级封装 | |
CN101207118A (zh) | 半导体芯片 | |
US8796058B2 (en) | Semiconductor structure | |
US7023070B2 (en) | Semiconductor device | |
JP3613359B2 (ja) | 半導体装置の製造方法及び半導体装置 | |
JPH09196700A (ja) | 静電容量型半導体力学量センサ及び製造方法 | |
KR102205988B1 (ko) | Saw 필터 패키지 및 그의 제조방법 | |
JPH0831982A (ja) | 半導体装置及び半導体チツプの実装方法 | |
JP5743383B2 (ja) | 圧電素子及び圧電装置の製造方法 | |
KR20130017349A (ko) | 모니터링 패드 및 이를 포함하는 반도체 장치 | |
JPH08167826A (ja) | 弾性表面波素子 | |
JP6508679B2 (ja) | 電子デバイス | |
JPH06244236A (ja) | 半導体装置の製造方法 | |
JP2738011B2 (ja) | 静電気対策用ウエーハ | |
JP2005175506A (ja) | 半導体装置 | |
JP2010149209A (ja) | 電気部品およびその製造方法 | |
JP2005045267A (ja) | 半導体装置 | |
JPH0846141A (ja) | 集積回路装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071214 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101110 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101112 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101228 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110214 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110302 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110526 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110803 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110825 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4814108 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140902 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |