JP4761713B2 - Electronic component sealing substrate, multi-component electronic component sealing substrate, and method of manufacturing electronic device - Google Patents

Description

  The present invention provides an electronic component sealing method for sealing an electronic component formed by forming an electronic component region formed by forming a microelectromechanical mechanism and an electrode electrically connected to the main surface of a semiconductor substrate. The present invention relates to a manufacturing substrate and a method for manufacturing an electronic device formed by sealing a microelectromechanical mechanism of an electronic component using the substrate.

  2. Description of the Related Art In recent years, an electronic component in which a very small electromechanical mechanism, a so-called MEMS (Micro Electromechanical System), is formed by applying a processing technique for forming fine wiring such as a semiconductor integrated circuit element on a main surface of a semiconductor substrate such as a silicon wafer. Has been attracting attention, and is being developed for practical use.

  Such microelectromechanical mechanisms include sensors such as accelerometers, pressure sensors, and actuators, micromirror devices with movable micromirrors, optical devices, microchemical systems incorporating micropumps, etc. Prototypes have been developed and developed over a very wide field.

  FIG. 4 is a cross-sectional view of an example of a conventional electronic component sealing substrate for configuring an electronic device using an electronic component having such a micro-electromechanical mechanism and an electronic device using the same. In the example shown in FIG. 4, power is supplied to the main surface of the semiconductor substrate 21 on which the micro electro mechanical mechanism 22 is formed, or an electric signal is transmitted from the micro electro mechanical mechanism 22 to an external electric circuit. Is formed by being electrically connected to the micro electro mechanical mechanism 22, and the semiconductor substrate 21, the micro electro mechanical mechanism 22, and the electrode 23 constitute one electronic component 24. .

  Such an electronic component 24 is usually manufactured by forming a multi-chip form in which a large number are arranged on the main surface of the semiconductor substrate 21 vertically and horizontally, and then cutting into individual semiconductor substrates 21. Therefore, in order to prevent foreign matter such as cutting powder from adhering to the microelectromechanical mechanism 22 during this cutting and hindering the operation, the glass plate 25 is covered and protected.

  The electronic component 24 is accommodated in the recess A of the package 31 having the recess A for storing the electronic component, and the electrode 23 of the electronic component 24 is electrically connected to the electrode pad 32 of the package 31 such as a bonding wire 33. After the connection via the material, the recess A of the package 31 is covered with the lid 34 and the electronic component 24 is hermetically sealed in the recess A, thereby completing the electronic device. In this case, the electronic component 24 needs to be hermetically sealed in a hollow state so as not to hinder the operation of the microelectromechanical mechanism 22.

  With respect to this electronic device, a lead-out portion of the wiring conductor 35 formed so as to lead out from the electrode pad 32 of the package 31 to the outer surface in advance is connected to an external electric circuit, so that the microelectronic machine is hermetically sealed. The mechanism 22 is electrically connected to an external electric circuit through the electrode 23, the bonding wire 33, the electrode pad 32, and the wiring conductor 35.

  In addition, such an electronic component 24 is usually manufactured by arranging a large number of elements vertically and horizontally on the main surface of a large-area semiconductor substrate. In this case, a method for manufacturing an electronic device is conventionally as follows. It was something like that.

  That is, (1) An electronic component is prepared in which a large number of electronic component regions each having a micro-electromechanical mechanism 22 and an electrode 23 electrically connected thereto are formed on the main surface of a semiconductor substrate. A step, (2) a step of encapsulating the micro-electromechanical mechanism 22 of each electronic component with a glass plate 25 or the like so that the periphery thereof is in a hollow state, and (3) dicing or the like on the semiconductor substrate Are cut into individual electronic components 24, and (4) the individual electronic components 24 are hermetically sealed in the electronic component storage package 31.

  In such a conventional manufacturing method, it is necessary to seal and protect each one of a large number of electronic component regions arranged on the main surface of the semiconductor substrate with a glass plate 25 or the like, After the electronic component 24 once sealed with the glass plate 25 is divided into individual electronic components 24, the electronic component 24 is hermetically sealed in the package 31 and the electrode 23 is connected to the electrode pad 32 of the package 31 and the like. Due to the necessity of connection, there was a problem that productivity was poor and practical application was difficult.

  In order to solve this problem, a substrate has been proposed in which a large number of mechanical microelectronic machines 22 arrayed on the main surface of a semiconductor substrate are collectively covered and sealed. As such a sealing substrate, a substrate made of a semiconductor substrate, a conductive metal plate, or the like is known.

  In the case where the sealing substrate is made of a semiconductor substrate, for example, apart from the first semiconductor substrate in which a large number of electronic component regions are arranged and formed on the main surface, a large number of recesses corresponding to the arrangement of the electronic component regions. A second semiconductor substrate for sealing, in which the first semiconductor substrate is arranged, the second semiconductor substrate is disposed on the main surface of the first semiconductor substrate, and the concave portion of the second semiconductor substrate is an electronic component of the first semiconductor substrate. A technique has been proposed in which an electronic component region (especially a micro-electromechanical mechanism) of a first semiconductor substrate is sealed inside a second semiconductor substrate so as to cover the region (for example, a patent) Reference 1).

In addition, when the sealing substrate is made of a conductive metal plate, a groove having a predetermined pattern is formed in the conductive metal plate for the cover, and the groove is filled with glass or a ceramic material to be flattened. After that, a conductor pattern for bonding (electrode pad, etc.) is formed thereon, an electrode of an electronic component is connected to this conductor pattern, and a metal plate is bonded to the main surface of the semiconductor substrate, and then an electronic component region Has been proposed in which an electrode pattern for external wiring for leading a conductor pattern to the outside is formed (see, for example, Patent Document 2).
JP 2001-144117 A JP 2002-43463 A

  However, when the electronic component region on the main surface of the semiconductor substrate is sealed using such a conventional sealing substrate, a large number of electronic component regions can be collectively sealed, for example, In the case of a sealing substrate made of a semiconductor material, wiring conductors cannot be three-dimensionally formed inside the substrate, so the electronic component region of the sealing (second) semiconductor substrate The wiring conductor cannot be led out from the main surface bonded to the (first) semiconductor substrate on which the first electrode is arranged to the other main surface opposite to the main surface, and the electrode of the electronic component is connected to the main surface of the first semiconductor substrate. It is necessary to extend a part of the formed electrode to the outside of the sealing part, and to connect this extended part to the electrode pad of the electronic component storage package or an external electric circuit via a bonding wire. Process (from sealing of electronic component area Complete as a child apparatus to the process) is longer connected to an external electric circuit, also, there is a problem that the size of individual electronic devices increases. In addition, there is a problem that surface mounting that is advantageous for miniaturization of an electronic system incorporating an electronic device cannot be performed.

  In the case of a sealing substrate made of a conductive metal plate, etc., once formed on the surface of the metal plate with glass or ceramics so that a conductor pattern such as an electrode pad can be formed on the metal plate. In this case, too, it is necessary to shorten the mounting process of the electronic component because it is necessary to form an insulating part by filling the groove or the like, or to form a conductor part on the surface of the insulating part during the mounting process. There is a problem that is difficult.

  Furthermore, in recent years, electronic components that have formed a micro electro mechanical system (MEMS) have been driven at low voltage and speeded up, and harmonic noise that enters from outside the electronic components has been increased. High-frequency noise that is easily affected and propagated from the outside through the wiring conductor causes changes in electrical characteristics and destruction of the MEMS area, and harmonic noise contained in the signal propagating through the wiring conductor is emitted to the outside of the electronic component. Therefore, if there is a noise source near the outside of the electronic component, electromagnetic noise enters the signal that propagates through the wiring conductor deposited on the insulating substrate and propagates to the microelectromechanical mechanism. Malfunctioning, or destroying the drive part of the electronic component, Alternatively, if there is an electronic device or the like that is easily affected by electromagnetic noise at a position near the outside of the electronic component, there is a problem that the electromagnetic noise emitted from the electronic component has an adverse effect on the electronic device or the like.

  In addition, in order to reduce the influence of high-frequency noise, a method such as mounting a low-pass filter in the vicinity of the MEMS or manufacturing a low-pass filter using a conductor pattern on a printed board is taken, which increases the mounting area. There was a problem.

  The present invention has been completed in view of the above problems in the prior art, and its purpose is to easily and reliably seal a microelectromechanical mechanism formed on the main surface of a semiconductor substrate. The electrode formed on the main surface of the semiconductor substrate connected to the microelectromechanical mechanism can be easily and reliably externally connected, for example, in a form capable of surface mounting, and the microelectromechanical mechanism is formed. To provide an electronic component sealing substrate that is not easily affected by harmonic noise that enters from the outside of an electronic component, and that harmonic noise contained in a signal propagating through a wiring conductor is less likely to be emitted to the outside of the electronic component. .

  Another object of the present invention is to easily and surely seal even if a large number of electronic component regions composed of such micro-electromechanical mechanisms and electrodes are arranged vertically and horizontally on the main surface of the semiconductor substrate. The present invention provides a sealing substrate that can be stopped, and uses such a sealing substrate to form a large number of electronic devices in which a microelectromechanical mechanism is sealed, for example, in a surface mountable form. It is an object of the present invention to provide a method of manufacturing an electronic device that can be collectively formed.

The electronic component sealing substrate of the present invention includes an insulating substrate in which a plurality of wiring conductors led from one main surface to the other main surface or side surfaces are formed, and a concave portion is formed on the one main surface ; said one formed on the main surface, the wiring conductor and electrically connected to connection pads, and the previous SL said one joined so as to surround the connection pads on the major surface frame member of the insulating substrate, the connection A connection terminal formed on the pad and having the same height as the frame member, and a low-pass filter made of a conductor pattern formed inside or on the surface of the insulating substrate, and the wiring conductor transmits a high-frequency signal. The low-pass filter is connected in series to a wiring conductor through which the high-frequency signal is transmitted, and a microelectromechanical mechanism and an electrode electrically connected thereto are formed on the main surface of the semiconductor substrate. The electrode of the electronic component joined to the connection terminals that, by joining the main surface of the semiconductor substrate to the main surface of the frame member, the concave portion facing the micro electronic mechanical system of said insulating substrate The micro electro mechanical mechanism of the electronic component is hermetically sealed inside the frame member.

  In the electronic component sealing substrate according to the present invention, preferably, the low-pass filter includes a π-type capacitor and an inductor circuit.

  In the electronic component sealing substrate according to the present invention, preferably, the insulating substrate has a quadrangular shape in plan view, and the capacitor is disposed on the inner side of the frame member and in plan view. It is characterized by being formed symmetrically with respect to a straight line or diagonal line passing through the centers of two opposing sides.

  In the electronic component sealing substrate according to the present invention, preferably, the low-pass filter includes the linear conductor pattern and a plurality of protrusions formed in the conductor pattern. It is characterized by.

  In the electronic component sealing substrate according to the present invention, preferably, in the above configuration, a plurality of the frame members each having the connection pads and the connection terminals formed therein are arranged vertically and horizontally. Is.

The electronic device manufacturing method according to the present invention also provides an electronic device in which a plurality of electronic component regions formed by forming a microelectromechanical mechanism and electrodes electrically connected to the main surface of a semiconductor substrate are arranged vertically and horizontally. A step of preparing a component ; an insulating substrate in which a plurality of wiring conductors led out from one main surface to the other main surface or side surface are formed; and a concave portion is formed on the one main surface; and the one main surface of the insulating substrate formed, and connection pads the wired conductor electrically connected, before Symbol said one frame is joined so as to surround the connection pads on the major surface member of the insulating substrate, formed on the connection pad A connection terminal having the same height as the frame member, and a low-pass filter composed of a conductor pattern formed inside or on the surface of the insulating substrate, wherein the wiring conductor includes one that transmits a high-frequency signal, Above The pass filter prepares an electronic component sealing substrate in which a large number of electronic component sealing regions connected in series to the wiring conductor through which the high-frequency signal is transmitted are arranged in correspondence with the electronic component regions of the electronic component. A step of bonding the electrode of the electronic component to the connection terminal and forming the electrode on the one main surface of the insulating substrate so as to face the microelectromechanical mechanism formed on the main surface of the semiconductor substrate; by the recess is arranged that, air by bonding the main surface of the semiconductor substrate around the micro electronic mechanical system on the main surface of the frame member, the front Symbol micro electronic mechanical system inside the frame member A step of hermetically sealing, and the electronic component and the electronic component sealing substrate bonded to each other are divided for each electronic component sealing region, and the electronic component region is bonded to the electronic component sealing region; It is characterized in that it comprises the step of obtaining the electronic device s.

According to the electronic component sealing substrate of the present invention, an insulating substrate in which a plurality of wiring conductors led from one main surface to the other main surface or side surface are formed, and a concave portion is formed on one main surface ; on the other hand formed on the main surface, a wiring conductor electrically connected to connection pads, and a frame member joined so as to surround the connection pads on one main surface of the insulated substrate, which is formed on the connection pad and a connection terminal having the same height as the frame member composed of a low-pass filter composed of a conductor pattern formed inside or on the surface of the insulating substrate, wiring conductors include those high-frequency signal is transmitted, b-pass filter high are connected in series to the wiring conductor-frequency signal is transmitted, contact the electronic components of electrodes comprising a main surface micro electronic mechanical system and which electrically connected to the electrodes of the semiconductor substrate is formed connection terminals It joined to a semi-conductor By joining the main surfaces of the plate to the main surface of the frame member, with the recess is formed at a portion opposed to the micro electronic mechanical system of insulated substrate, infinitesimal electromechanical inside the electronic components of the frame member Since the mechanism is hermetically sealed, the microelectromechanical mechanism of the electronic component can be easily and reliably sealed between the frame member and the insulating substrate simply by joining the main surface of the frame member to the main surface of the semiconductor substrate. Can be stopped.

  In addition, since the height of the main surface of the frame member is the same as the height of the connection terminal formed on the connection pad, when the main surface of the frame member is joined to the main surface of the semiconductor substrate, the main surface of the semiconductor substrate. The electrode formed on the surface can be easily and reliably connected to the connection terminal. Moreover, the electrode of an electronic component can also be derived | led-out outside from this connection terminal via a connection pad and a wiring conductor.

  In addition, a low-pass filter made of a conductor pattern is formed inside or on the surface of the insulating substrate. The wiring conductor includes one that transmits a high-frequency signal, and the low-pass filter is in series with the wiring conductor that transmits a high-frequency signal. Even if high-frequency noise propagates from the outside while the driving MEMS is driven, the high-frequency noise is selectively cut by the low-pass filter in the driving MEMS to further reduce the adverse effect on the MEMS. Can do.

  Preferably, in the present invention, since the low-pass filter is formed of a capacitor and an inductor circuit connected in a π-type, the capacitor circuit can be disposed almost symmetrically at the input / output portion of the low-pass filter, so that Warpage during substrate fabrication can be reduced, and primary mounting reliability when the MEMS is mounted on an insulating substrate is improved.

  Preferably, in the present invention, the insulating substrate has a quadrangular shape in plan view, and the capacitor is line-symmetric with respect to a straight line or a diagonal line passing through the centers of two opposite sides of the insulating substrate in plan view, inside the frame member. By forming the insulating substrate, warpage during the production of the insulating substrate can be further reduced, and the connection reliability between the MEMS and the insulating substrate is further improved.

  In the present invention, it is preferable that the low-pass filter includes a linear conductor pattern formed inside or on the surface of the insulating substrate and a plurality of protrusions formed in the conductor pattern, so that a self-resonant frequency is obtained. Therefore, it becomes possible to use in a further high frequency band. In addition, since the low-pass filter can be manufactured with a smaller size, warpage during manufacturing of the insulating substrate can be reduced, and primary mounting reliability when the MEMS is mounted on the insulating substrate is improved. As a result, a highly reliable electronic component sealing substrate can be obtained.

  In addition, the electronic component sealing substrate of the present invention is formed by using an insulating substrate such as a ceramic multilayer wiring substrate, for example, so that the connection pads and the frame members are formed and bonded to the wiring conductor. From one main surface to the other main surface or side surface, it can be freely formed on the inside or surface of the substrate and led out, and by attaching metal bumps for external connection to this derived end, etc. It can be completed as an electronic device that can be surface-mounted.

  In addition, in the electronic component sealing substrate of the present invention, when a large number of frame members having connection pads and connection terminals formed inside are arranged in the vertical and horizontal directions, a large number of electronic component regions are formed on the main surface of the semiconductor substrate. Even if they are arranged vertically and horizontally, they can be sealed together so that they can be externally connected together.

  According to the method for manufacturing an electronic device of the present invention, since each of the above steps is provided, connection for external connection of each electrode and a microelectromechanical mechanism for a large number of electronic component regions arranged in rows and columns. Therefore, a large number of electronic devices composed of electronic components and electronic component sealing substrates bonded to each other can be manufactured easily and reliably.

  In addition, by dividing the electronic component and the electronic component sealing substrate bonded to each other into each electronic component sealing region, a large number of individual electronic devices formed by bonding the electronic component region to the electronic component sealing region can be simultaneously performed. Can be manufactured. At the time of the division, the micro electro mechanical mechanism in the electronic component region is sealed by the sealing substrate, so that the cutting powder of the semiconductor substrate such as silicon generated by the dicing process or the like adheres to the micro electro mechanical mechanism. There is no such thing, and the micro electromechanical mechanism can be reliably operated in the divided electronic device.

  Moreover, since the wiring conductor is led out to the other main surface or side surface of the insulating substrate, the electronic device obtained by dividing the surface can be obtained by simply attaching a terminal such as a metal bump to the lead end. The electronic device can be mounted on an external electric circuit board by mounting or the like, so that the mounting process is very short and mounting is easy.

  The electronic component sealing substrate of the present invention and an electronic device manufacturing method using the same will be described in detail below.

  FIG. 1 is a sectional view showing an example of an embodiment of an electronic component sealing substrate of the present invention. In FIG. 1, 1 is an insulating substrate, 2 is a wiring conductor, 3 is a connection pad, 4 is a frame member, and 5 is a connection terminal. These insulating substrate 1, wiring conductor 2, connection pad 3, frame member 4 and connection terminal 5 form an electronic component sealing substrate 6.

  The electronic component sealing substrate 6 is used to form a microelectromechanical mechanism 8 and an electrode 9 on the main surface (lower surface in the example of FIG. 1) of the semiconductor substrate 7 so as to be electrically connected to each other. By sealing the electronic component 10 formed, an electronic device is formed in which the microelectromechanical mechanism 8 is sealed in a state where it can be externally connected.

  The micro electro mechanical mechanism 8 in the present invention includes, for example, an electric switch, an inductor, a capacitor, a resonator, an antenna, a micro relay, an optical switch, a magnetic head for a hard disk, a microphone, a biosensor, a DNA chip, a microreactor, a print head, an acceleration sensor, It is an electronic device having functions such as various sensors such as pressure sensors and display devices, and is a part made by so-called micromachining based on semiconductor micromachining technology, and has a size of about 10 μm to several 100 μm per element.

  The insulating substrate 1 functions as a lid for sealing the microelectromechanical mechanism 8 and also functions as a base for forming the wiring conductor 2, the connection pad 3, the frame member 4, and the connection terminal 5.

  The insulating substrate 1 includes ceramic materials such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, and a glass ceramic sintered body. It is formed of an organic resin material such as polyimide or glass epoxy resin, or a composite material formed by bonding inorganic powder such as ceramics or glass with an organic resin such as epoxy resin.

  If the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, the insulating substrate 1 is formed by laminating and baking a green sheet formed by forming aluminum oxide and a raw material powder such as glass powder on the sheet. . The insulating substrate 1 is not limited to the one formed of an aluminum oxide sintered body, and it is preferable to select a substrate that is suitable for the application and the characteristics of the electronic component 10 to be hermetically sealed.

  For example, since the insulating substrate 1 is mechanically bonded to the semiconductor substrate 7 via the frame member 4 as will be described later, the reliability of bonding with the semiconductor substrate 7, that is, the sealing of the micro electro mechanical mechanism 8 is achieved. In order to increase the airtightness, a mullite sintered body, an aluminum oxide-borosilicate glass system in which the thermal expansion coefficient is approximated to the semiconductor substrate 7 by adjusting, for example, the kind and addition amount of the glass component, etc. It is preferable to form a material having a small difference in thermal expansion coefficient from the semiconductor substrate 7 such as a glass ceramic sintered body.

  Further, in the case of preventing the delay of the electrical signal transmitted by the wiring conductor 2, the insulating substrate 1 is made of an organic resin material such as polyimide or glass epoxy resin, or an inorganic powder such as ceramic or glass such as epoxy resin. It is preferably formed of a composite material formed by bonding with an organic resin, or a material having a low relative dielectric constant such as a sintered glass ceramic such as aluminum oxide-borosilicate glass or lithium oxide.

  Further, the insulating substrate 1 has a large calorific value of the microelectromechanical mechanism 8 to be sealed, and in the case where the heat dissipating property is good, a heat such as an aluminum nitride sintered body is used. It is preferable to form with a material having high conductivity.

  From one main surface of the insulating substrate 1 (main surface on the side where the micro electro mechanical mechanism 8 is sealed), the wiring conductor 2 is led out to the other main surface or side surface.

  In addition, a connection pad 3 connected to the wiring conductor 2 is formed in a portion inside the frame member 4 on the one main surface side of the insulating substrate 1.

  The wiring conductor 2 and the connection pad 3 are electrically connected to the electrode 9 of the electronic component 10 through the connection terminal 5 formed on the connection pad 3, and this is connected to the other main surface or side surface of the insulating substrate 1. It has a function to derive.

  These wiring conductors 2 and connection pads 3 are formed of a metal material such as copper, silver, gold, palladium, tungsten, molybdenum, and manganese. As a means for the formation, a means for depositing a metal such as a metallized layer, a plating layer, or vapor deposition as a thin film layer can be used. For example, in the case of a tungsten metallized layer, it is formed by printing a tungsten paste on a ceramic green sheet (hereinafter also referred to as a green sheet) to be the insulating substrate 1 and firing it together with the green sheet.

  The connection terminal 5 can be joined with tin-silver solder, tin-silver-copper solder, low melting point solder such as gold-tin solder, high melting solder such as silver-germanium, or conductive organic resin. Or a metal material that can be joined by a welding method such as seam welding or electron beam welding.

  By joining the connection terminal 5 to the electrode 9 of the electronic component 10, the electrode 9 of the electronic component 10 is connected to the other main surface or side surface of the insulating substrate 1 via the connection terminal 5, the connection pad 3 and the wiring conductor 2. Derived. And the electrode 9 of the electronic component 10 is electrically connected with an external electric circuit by joining this derived | led-out edge part to an external electric circuit via tin-lead solder etc. FIG.

  A frame member 4 is joined to one main surface of the insulating substrate 1 so as to surround the connection pad 3. The frame member 4 functions as a side wall for hermetically sealing the microelectromechanical mechanism 8 of the electronic component 10 inside thereof. By joining the main surface (upper surface in the example of FIG. 1) of the frame member 4 to the main surface (lower surface in the example of FIG. 1) of the electronic component 10, the micro electromechanical mechanism 8 is hermetically sealed inside the frame member 4. Stopped. In this case, the semiconductor substrate 7 serves as a bottom plate and the insulating substrate 1 serves as a lid.

  The frame member 4 is made of an iron-nickel alloy such as iron-nickel-cobalt alloy or iron-nickel alloy, a metal material such as oxygen-free copper, aluminum, stainless steel, copper-tungsten alloy, copper-molybdenum alloy, or aluminum oxide. It is formed of an inorganic material such as a quality sintered body or a glass ceramic sintered body, or an organic resin material such as PTFE (polytetrafluoroethylene) or glass epoxy resin.

  Further, as a method of joining the main surface of the frame member 4 to the main surface of the semiconductor substrate 7 of the electronic component 10, solder such as tin-silver type, low melting point brazing material such as gold-tin brazing, silver-germanium type, etc. A bonding method such as a high melting point brazing material, a conductive organic resin or the like, or a welding method such as seam welding or electron beam welding can be used.

Then, for the electronic component 10 in which the microelectromechanical mechanism 8 and the electrode 9 electrically connected thereto are formed on the main surface of the semiconductor substrate 7, the electrode 9 is joined to the connection terminal 5. By joining the surface to the main surface of the frame member 4, an electronic device in which the microelectromechanical mechanism 8 of the electronic component 10 is hermetically sealed inside the frame member 4 is formed.

  A low-pass filter 12 made of a conductor pattern is formed inside or on the surface of the insulating substrate 1. The wiring conductor 2 includes one that transmits a high-frequency signal, and the low-pass filter 12 transmits a high-frequency signal. Since the low-pass filter 12 has a high impedance with respect to a high-frequency signal because it is connected in series to the wiring conductor 2, even if high-frequency noise propagates from the outside during driving, the low-pass filter 12 is connected to the driving MEMS. The high-frequency noise is selectively cut by the low-pass filter 12, and the adverse effect on the MEMS can be further reduced.

  In addition, since the low-pass filter 12 is preferably formed of a capacitor and an inductor circuit connected in a π-type, the capacitor circuit can be disposed almost symmetrically at the input / output portion of the low-pass filter 12, so that the insulating substrate 1 can be reduced, and the primary mounting reliability when the MEMS is mounted on the insulating substrate 1 is improved.

  Specifically, the low-pass filter 12 including a capacitor and an inductor circuit connected in a π-type is an inductor circuit connected in series to the wiring conductor 2 through which a high-frequency signal is transmitted, and both ends of the inductor circuit are grounded. In this configuration, a capacitor having one of the counter electrodes connected to (ground) is connected.

  In the present invention, the insulating substrate 1 has a quadrangular shape in plan view, and the capacitor is lined with respect to a straight line or a diagonal line passing through the centers of two opposite sides of the insulating substrate 1 in plan view, inside the frame member 4. It is preferable to form symmetrically. Thereby, the curvature at the time of manufacturing the insulated substrate 1 can further be reduced, and the connection reliability of MEMS and the insulated substrate 1 improves more.

  In addition, the capacitor has, for example, a quadrangular shape or a round shape that are vertically overlapped as an electrode formed by using a conductor pattern formed inside or on the surface of the insulating substrate 1.

  The inductor circuit is formed of a conductor pattern such as a meander type or a spiral type.

  Preferably, the low-pass filter 12 is formed by a linear conductor pattern and a plurality of protrusions formed in the conductor pattern, so that it can function as a distributed constant circuit, and the self-resonance frequency is increased. Therefore, it can be used in a further high frequency band.

Furthermore, since the low-pass filter 12 can be manufactured in a smaller size, warpage when the insulating substrate 1 is manufactured can be reduced, and primary mounting reliability when the MEMS is mounted on the insulating substrate 1 is improved. To do. As a result, a highly reliable electronic component sealing substrate 6 can be obtained.

  The low-pass filter 12 is manufactured in the same manner as the wiring conductor 2 and the connection pad 3.

  By connecting the lead-out portion of the wiring conductor 2 of this electronic device to an external electric circuit via an external terminal 11 such as a solder ball, the microelectromechanical mechanism 8 is electrically connected to the external electric circuit.

  As shown in FIG. 1, a conductor layer 3a is formed of the same material as that of the connection pad 3 on the main surface of the insulating substrate 1 to which the frame member 4 is bonded, and the insulating substrate 1 is formed from the conductor layer 3a. A part of the wiring conductor 2 may be led out over the other main surface. The lead-out portion of the wiring conductor 2 led out from the conductor layer 3a can be connected to the grounding terminal of the external electric circuit or the like via the external terminal 11 or the like.

  In this case, in order to enable the bonding of the connection terminal 5 and the electrode 9 and the bonding of the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 to be performed reliably and easily in one step, the connection terminal The height of 5 and the height of the frame member 4 are set to the same height.

  Further, the electronic component sealing substrate 6 of the present invention has such a connection pad 3 and frame member 4 as one of the large-area mother substrates as shown in a sectional view in FIG. It is preferable to use a so-called multi-cavity configuration in which the main surface is arranged vertically and horizontally. In FIG. 2, the same parts as those in FIG.

  In such a multi-cavity configuration, a multi-electromechanical mechanism 8 and a plurality of electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7 and manufactured in a multi-cavity configuration. A large number of electronic components 10 can be hermetically sealed at the same time, and the productivity can be improved.

  In addition, electronic components 10 manufactured in a multi-cavity form in which a large number of microelectromechanical mechanisms 8 and a plurality of electrodes 9 electrically connected thereto are arranged on the main surface of the semiconductor substrate 7 are collectively sealed. If this is stopped, the semiconductor substrate 7 (and the electronic component sealing substrate 6) is subjected to a cutting process such as a dicing process to be divided into individual electronic components 10 (electronic devices). Generation | occurrence | production of the malfunction that the generated cutting powder etc. adhere to the micro electromechanical mechanism 8 and obstruct | operate the action | operation can be prevented effectively.

  Next, a method of manufacturing an electronic device using such an electronic component sealing substrate 6 will be described with reference to FIGS. FIG. 3 is a cross-sectional view showing an example of an embodiment of an electronic device manufacturing method according to the present invention in the order of steps. In FIG. 3, the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals.

  First, as shown in FIG. 3A, a large number of electronic component regions 10a each having a microelectromechanical mechanism 8 and electrodes 9 electrically connected to the main surface of a semiconductor substrate 7 are formed vertically and horizontally. A multi-piece electronic component 10b having an array formed is prepared. The semiconductor substrate 7 is made of a silicon substrate such as a single crystal or polycrystal. A silicon oxide layer is formed on the surface of the silicon substrate, and by applying a fine wiring processing technique such as photolithography, a micro electromechanical mechanism 8 such as a minute vibrating body and an electrode 9 made of a conductor such as a circular pattern are provided. By arranging a large number of formed electronic component regions 10a, a multi-piece electronic component 10b is formed. In this example, the microelectromechanical mechanism 8 and the electrode 9 are electrically connected via fine wiring (not shown) formed on the main surface of the semiconductor substrate 7, respectively.

  Next, as shown in FIG. 3B, the insulating substrate 1 on which the wiring conductor 2 led out from the one main surface to the other main surface or the side surface is formed, and the one main surface of the insulating substrate 1 is formed. A connection pad 3 electrically connected to the wiring conductor 2, a frame member 4 joined so as to surround the connection pad 3 on one main surface of the insulating substrate 1, and a frame member formed on the connection pad 3 A plurality of electronic component sealing substrates 6b are prepared in which a large number of electronic component sealing regions 6a composed of connection terminals 5 having the same height as 4 are arranged in correspondence with the electronic component regions 10a of the electronic components. .

  Insulating substrate 1 on which wiring conductor 2 led out from one main surface to the other main surface or side surface is formed, for example, insulating substrate 1 is made of an aluminum oxide sintered body, and wiring conductor 2 is made of a metallized layer of tungsten. In some cases, raw powders such as aluminum oxide, silicon oxide, and calcium oxide are kneaded with an organic solvent and a resin binder to obtain a slurry, and this slurry is formed into a sheet by a doctor blade method, a lip coater method, or the like. A plurality of green sheets are formed, and a tungsten metallized paste is printed and filled on the surface of the green sheets, and if necessary, in the through holes previously formed in the green sheets. It can be formed by laminating and firing sheets.

Of these green sheets, some of them are punched to form square-shaped openings, etc., which are arranged on the outermost layer on one main surface side, or from the outermost layer to the inside. headed to be stacked several layers and, on one main surface of the insulating substrate 1 after firing, Contact Ku as recesses 1a corresponding to a sequence of electronic component regions 10a are arranged and formed. If the concave portion 1a is formed in this manner, the micro electro mechanical mechanism 8 can be accommodated inside the concave portion 1a, so that the height of the frame member 4 surrounding the micro electro mechanical mechanism 8 can be kept low. This is advantageous for reducing the height of the electronic device.

  The connection pad 3 is usually made of the same material as that of the wiring conductor 2. For example, a tungsten paste is connected to the printed tungsten paste to be the wiring conductor 2 on the outermost surface of the green sheet to be the insulating substrate 1. In this manner, a large number are arranged in rows and columns and printed by screen printing or the like.

  Further, if the frame member 4 is made of, for example, an iron-nickel-cobalt alloy, the metal plate of the iron-nickel-cobalt alloy is subjected to a rolling process, a punching process using a mold, or an etching process to form a frame shape. It is manufactured by doing.

  The frame member 4 and the insulating substrate 1 are joined by a solder such as a tin-silver solder, a low-melting solder such as gold-tin solder, a high-melting solder such as a silver-germanium, or a conductive organic resin. It can be carried out by a method of joining via a seam or a welding method such as seam welding or electron beam welding.

  Connection terminals 5 are formed on the connection pads 3 so as to have the same height as the frame member 4. If the connection terminal 5 is made of, for example, tin-silver solder, the connection terminal 5 is formed by positioning, heating, melting, and joining the solder balls on the connection pads 3.

  As a method of making the height of the connection terminal 5 the same as the height of the frame member 4, for example, when the tin-silver solder used as the connection terminal 5 is melted and formed on the connection pad 3, the upper surface thereof is changed. It is possible to use a method such as pressing with a ceramic jig or the like so as to be the same height as the frame member 4.

Next, as shown in FIG. 3 (c), overlapped with the electronic component 10b in correspondence with each electronic component regions 10a and the electronic component sealing region 6a to the electronic component sealing substrate 6b, the electrode 9 In addition to bonding to the connection terminal 5, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 is bonded to the main surface of the frame member 4, and the micro electro mechanical mechanism 8 is hermetically sealed inside the frame member 4. .

Here, when the electrode 9 and the connection terminal 5 are joined, for example, when the connection terminal 5 is made of tin-silver solder, the connection terminal 5 is aligned and placed on the electrode 9 , and these are placed at about 250. For example, the heat treatment is performed in a reflow furnace at a temperature of about from ℃ to 300 ℃.

In addition, the main surface of the semiconductor substrate 7 around the micro electro mechanical mechanism 8 and the main surface of the frame member 4 are joined, for example, with a tin-silver solder similar to the connection terminal 5 sandwiched between the joint surfaces. In addition, the heat treatment can be performed in the reflow furnace simultaneously with the joining of the electrode 9 and the connection terminal 5 described above. In this case, since the height of the connection terminal 5 is the same as the height of the frame member 4, the bonding between the electrode 9 and the connection terminal 5 and the bonding between the main surface of the frame member 4 and the main surface of the semiconductor substrate 7 are performed. It can be done easily and reliably at the same time.

As described above, according to the method for manufacturing an electronic device of the present invention, bonding for leading out the electrode 9 in the electronic component region 10a and bonding for hermetic sealing of the microelectromechanical mechanism 8 are simultaneously performed. Therefore, it is possible to reliably reduce at least one step of joining such as soldering that requires several hours as compared with the conventional manufacturing method, so that the productivity of electronic devices is greatly increased. Can do.

  Then, as shown in FIG. 3D, the electronic component 10b and the electronic component sealing substrate 6b joined together are divided into the electronic component sealing regions 6a, and the electronic component sealing is performed. Individual electronic devices are obtained in which the electronic component sealing substrate 6 in which the region 6a is divided is joined to the electronic component 10 in which the electronic component region 10a is divided.

  Cutting the joined body of the electronic component 10b and the electronic component sealing substrate 6b, which are joined together, in a multi-cavity form, can be performed by subjecting the joined body to a cutting process such as dicing. it can.

  In the method of manufacturing an electronic device according to the present invention, each microelectromechanical mechanism 8 is separated by the frame member 4, the semiconductor substrate 7, and the insulating substrate 1 inside the frame member 4 during the cutting process such as dicing. Since it is hermetically sealed, cutting powder such as silicon or ceramics generated when the semiconductor substrate 7 or the insulating substrate 1 is cut does not adhere to the microelectromechanical mechanism 8. The electronic mechanical mechanism 8 can be reliably operated normally.

  As described above, according to the method for manufacturing an electronic device of the present invention, when cutting the electronic component region 10a in which a large number are vertically and horizontally formed on the main surface of the semiconductor substrate 7 as in the prior art, the microelectronic machine is cut. It is not necessary to add a separate process for protecting the mechanism 8 by covering it with a glass plate or the like, and it is possible to reliably eliminate this process only for protection, so that the productivity of the electronic device is extremely high. It can be.

  In addition, the electronic device manufactured in this way is already hermetically sealed, and the electrode is led out to the outside through the wiring conductor 2, so that it is mounted in a separate package. There is no need to add an additional process, and it is possible to mount and use it on an external electric circuit board simply by connecting the lead-out portion of the wiring conductor 2 to an external electric circuit via an external terminal 11 such as a solder ball. it can.

  Further, in this case, since the wiring conductor 2 is led out to the other main surface or side surface of the insulating base 1, it can be connected to an external electric circuit in the form of surface mounting, and can be mounted with high density or external electric power. The circuit board can be effectively downsized.

  The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the gist of the present invention. For example, in the example of the above-described embodiment, one microelectromechanical mechanism is hermetically sealed in one electronic device, but a plurality of microelectromechanical mechanisms may be hermetically sealed in one electronic device. Further, in the example shown in FIG. 1, the wiring conductor 2 is led out to the other main surface side of the insulating substrate 1, but it may be led out to the side surface or to both the side surface and the other main surface. Good. Further, the electrical connection of the derived portion to an external electric circuit is not limited to being performed via a solder ball as an external terminal, and may be performed via a lead terminal, a conductive adhesive, or the like.

  In addition, the low-pass filter 12 in the present invention is not only used for reducing high-frequency noise, but may be used for other matching, phase adjustment, and the like, and is not limited to the above usage pattern.

It is sectional drawing which shows an example of embodiment of the board | substrate for electronic component sealing of this invention. It is sectional drawing which shows the other example of embodiment of the board | substrate for electronic component sealing of this invention. (A)-(d) is sectional drawing which showed an example of embodiment of the manufacturing method of the electronic device of this invention in order of the process, respectively. It is sectional drawing which shows an example of the conventional electronic component sealing substrate and an electronic apparatus using the same.

Explanation of symbols

1: insulating substrate 2: wiring conductor 3: connection pad 4: frame member 5: connection terminal 6: electronic component sealing substrate 6a: electronic component sealing region 6b: electronic component sealing substrate 7: semiconductor substrate 8: minute Electronic mechanical mechanism 9: Electrode 10: Electronic component 10a: Electronic component region 10b: Electronic component 11: External terminal 12: Low pass filter

Claims (6)

An insulating substrate in which a plurality of wiring conductors led out from one main surface to the other main surface or side surface are formed, and a recess is formed in the one main surface, and the wiring formed on the one main surface of the insulating substrate conductor and electrically connected to connection pads, before Symbol a frame member joined so as to surround the connection pads to the one main surface of the insulating substrate, it is formed on the connection pads, and the frame member It comprises a connection terminal having the same height and a low-pass filter made of a conductor pattern formed in or on the surface of the insulating substrate, wherein the wiring conductor includes one that transmits a high-frequency signal, and the low-pass filter includes the high-frequency signal. Are connected in series to a wiring conductor through which a micro electromechanical mechanism and an electrode electrically connected to the main surface of the semiconductor substrate are formed. Bonded to the terminal, by joining the main surface of the semiconductor substrate to the main surface of the frame member, with the recess is formed at a portion opposed to the micro electronic mechanical system of the insulating substrate, the frame member An electronic component sealing substrate, wherein the micro electro mechanical mechanism of the electronic component is hermetically sealed inside.   2. The electronic component sealing substrate according to claim 1, wherein the low-pass filter includes a capacitor and an inductor circuit connected in a π type.   The insulating substrate has a quadrangular shape in plan view, and the capacitor is formed in line symmetry with respect to a straight line or a diagonal line passing through the centers of two opposite sides of the insulating substrate in plan view, inside the frame member. 3. The electronic component sealing substrate according to claim 2, wherein the electronic component sealing substrate is provided.   2. The electronic component sealing substrate according to claim 1, wherein the low-pass filter includes a linear conductor pattern and a plurality of protrusions formed in the conductor pattern. Insulation in which a plurality of wiring conductors led out from the one main surface to the other main surface or side surfaces are formed on one main surface of the insulating mother board in a vertical and horizontal manner, and a recess is formed in the one main surface surrounding a substrate region, respective formed in said one main surface of the insulating substrate region, and a connection pad the wired conductor electrically connected, the connection pads before SL on the one main surface of the insulating substrate regions Low-pass filter comprising a frame member joined in this manner, a connection terminal formed on the connection pad and having the same height as the frame member, and a conductor pattern formed inside or on the surface of each insulating substrate region The wiring conductor includes a component that transmits a high-frequency signal, and the low-pass filter is connected in series to the wiring conductor that transmits the high-frequency signal. Together joined to and the connection terminal to the electrode of the electronic components made thereto are electrically connected electrode is formed, so as to face the micro electronic mechanical system formed on the main surface of the semiconductor substrate wherein placing the other hand the recess formed on the main surface of the insulating substrate areas, by joining the main surface of the semiconductor substrate to the main surface of the frame member, the frame before Symbol respective insulating substrate regions A multi-piece electronic component sealing substrate, wherein the micro-electromechanical mechanism of the electronic component is hermetically sealed inside a member. A step of preparing an electronic component in which a plurality of electronic component regions formed by forming microelectromechanical mechanisms and electrodes electrically connected to the main surface of a semiconductor substrate are arranged vertically and horizontally; A plurality of wiring conductors led out on the main surface or side surfaces are formed, an insulating substrate having a recess formed on the one main surface, and the wiring conductor formed on the one main surface of the insulating substrate electrically and connected to connection pads, before Symbol a frame member joined so as to surround the connection pads to the one main surface of the insulating substrate, it is formed on the connection pads, connection of the same height as the frame member And a low-pass filter comprising a conductor pattern formed inside or on the surface of the insulating substrate. The wiring conductor includes one that transmits a high-frequency signal. The low-pass filter transmits the high-frequency signal. Preparing a plurality of electronic component sealing regions connected in series to the wiring conductor to be formed, an electronic component sealing substrate formed in an array corresponding to the electronic component region of the electronic component; and The electrode is joined to the connection terminal, and the concave portion formed on the one main surface of the insulating substrate is disposed to face the microelectromechanical mechanism formed on the main surface of the semiconductor substrate. and, wherein said main surface of said semiconductor substrate around the micro electronic mechanical system and joined to the main surface of the frame member, and a pre-Symbol microelectromechanical system process to hermetically seal the inside of the frame member, to each other The step of dividing the electronic component and the electronic component sealing substrate bonded to each electronic component sealing region to obtain individual electronic devices in which the electronic component region is bonded to the electronic component sealing region. And comprising Method of manufacturing an electronic device according to claim and.

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