JP4452726B2 - メモリ - Google Patents
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- JP4452726B2 JP4452726B2 JP2007008638A JP2007008638A JP4452726B2 JP 4452726 B2 JP4452726 B2 JP 4452726B2 JP 2007008638 A JP2007008638 A JP 2007008638A JP 2007008638 A JP2007008638 A JP 2007008638A JP 4452726 B2 JP4452726 B2 JP 4452726B2
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- film
- memory
- ferroelectric
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- 239000010408 film Substances 0.000 claims description 460
- 239000010409 thin film Substances 0.000 claims description 80
- 239000000463 material Substances 0.000 claims description 65
- 239000011159 matrix material Substances 0.000 claims description 32
- 238000003860 storage Methods 0.000 claims description 28
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 16
- 230000006870 function Effects 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000011232 storage material Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 39
- 229920002120 photoresistant polymer Polymers 0.000 description 30
- 229910052814 silicon oxide Inorganic materials 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 29
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 14
- 229910052721 tungsten Inorganic materials 0.000 description 14
- 239000010937 tungsten Substances 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 13
- 230000010287 polarization Effects 0.000 description 13
- 239000012535 impurity Substances 0.000 description 12
- 239000000460 chlorine Substances 0.000 description 11
- 238000000059 patterning Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 7
- 239000005380 borophosphosilicate glass Substances 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 7
- 150000002431 hydrogen Chemical class 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- WHVLVEATLPIRED-UHFFFAOYSA-N C=C.F.F.F Chemical group C=C.F.F.F WHVLVEATLPIRED-UHFFFAOYSA-N 0.000 description 1
- 229910019007 CoSiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Images
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- Semiconductor Memories (AREA)
Description
図1は、本発明の第1実施形態による単純マトリックス型の強誘電体メモリを示した断面図である。
図14は、本発明の第2実施形態によるクロスポイント型の巨大磁気抵抗材料を用いた不揮発性メモリを示した断面図である。図14を参照して、この第2実施形態では、上記第1実施形態と異なり、本発明を、記憶材料膜として巨大磁気抵抗材料を用いた不揮発性メモリに適用した例について説明する。
図15は、本発明の第3実施形態による単純マトリックス型の強誘電体メモリを示した断面図である。図15を参照して、この第3実施形態では、上記第1実施形態による単純マトリックス型の強誘電体メモリの構造を、下部電極が直接タングステンプラグに接続されるとともに、強誘電体膜が下部電極の上面および側面を覆う構造に変更した例について説明する。
14、74 Pt膜(第1電極膜)
15、75 強誘電体膜(記憶材料膜)
15a 記憶部
15b 薄膜部
16、76 上部電極(第2電極膜)
17、77 シリコン窒化膜(絶縁膜)
19、79 TiN膜(接続配線)
20、80 Al膜(接続配線)
18b ビアホール(接続領域)
25 巨大磁気抵抗材料膜(記憶材料膜)
25a、75a 記憶部
25b、75b 薄膜部
Claims (5)
- 第1電極膜と、
前記第1電極膜上に形成され、記憶部と、前記記憶部の厚みよりも小さく、かつ、平均値で前記記憶部の厚みの15%以上95%以下の厚みを有する薄膜部とを有する記憶材料膜と、
前記記憶材料膜の前記記憶部上に形成された第2電極膜と、
前記第1電極膜、前記記憶材料膜および前記第2電極膜を有する単純マトリックス型の複数のメモリセルを含むメモリセルアレイ領域と、
平面的に見て前記メモリセルアレイ領域とは異なる領域に形成され、トランジスタを含む周辺回路領域と、
前記メモリセルアレイ領域の前記複数のメモリセルが形成される領域の前記記憶材料膜の上方の実質的に全領域を覆うように形成されるとともに、前記トランジスタを含む周辺回路領域には形成されない水素の拡散を抑制する絶縁膜と
を備えた、メモリ。 - 前記メモリセルアレイ領域と前記周辺回路領域とを接続するための接続配線をさらに備え、
少なくとも前記メモリセルアレイ領域の前記第1電極膜の上面と前記接続配線との接続領域近傍には、前記記憶材料膜の薄膜部が存在しないように、前記記憶材料膜がパターニングされている、請求項1に記載のメモリ。 - 前記第1電極膜は、第1下部電極膜と、前記第1下部電極膜上に形成された第2下部電極膜とを含み、
前記第1下部電極膜は、酸素の拡散を抑制する機能を有する、請求項1および2のいずれか1項に記載のメモリ。 - 前記記憶材料膜は、前記第1電極膜の上面および側面を覆うように形成されている、請求項1および3のいずれか1項に記載のメモリ。
- 一対のソース/ドレイン領域を有する導電性トランジスタと、
前記トランジスタのソース/ドレイン領域の一方に接続された導電性プラグと
をさらに備え、
前記第1電極膜は、前記導電性プラグに接触するように形成されている、請求項1、3および4のいずれか1項に記載のメモリ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007008638A JP4452726B2 (ja) | 2003-03-25 | 2007-01-18 | メモリ |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003081671 | 2003-03-25 | ||
JP2007008638A JP4452726B2 (ja) | 2003-03-25 | 2007-01-18 | メモリ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004076952A Division JP3920863B2 (ja) | 2003-03-25 | 2004-03-17 | メモリの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007134736A JP2007134736A (ja) | 2007-05-31 |
JP4452726B2 true JP4452726B2 (ja) | 2010-04-21 |
Family
ID=38156067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007008638A Expired - Fee Related JP4452726B2 (ja) | 2003-03-25 | 2007-01-18 | メモリ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4452726B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011114202A (ja) * | 2009-11-27 | 2011-06-09 | Sharp Corp | 不揮発性半導体記憶装置及びその製造方法 |
US20210389395A1 (en) * | 2018-11-07 | 2021-12-16 | Sony Semiconductor Solutions Corporation | Magnetoresistive element and semiconductor device |
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2007
- 2007-01-18 JP JP2007008638A patent/JP4452726B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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JP2007134736A (ja) | 2007-05-31 |
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