JP4450051B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP4450051B2 JP4450051B2 JP2007293814A JP2007293814A JP4450051B2 JP 4450051 B2 JP4450051 B2 JP 4450051B2 JP 2007293814 A JP2007293814 A JP 2007293814A JP 2007293814 A JP2007293814 A JP 2007293814A JP 4450051 B2 JP4450051 B2 JP 4450051B2
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- light emitting
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- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
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- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
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- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- 125000003003 spiro group Chemical group 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000016776 visual perception Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Description
図1は、第1実施形態の表示装置の構成図である。この図に示す表示装置1aは、基板3上に赤(R)、緑(G)、青(B)の各色に発光する有機電界発光素子5r,5g,5b、すなわち赤色発光素子5r,緑色発光素子5g,青色発光素子5bをマトリックス状に配列してなり、各発光素子5r,5g,5bでの発光光を基板3と反対側から取り出す上面発光型として構成されている。
図2は、第2実施形態の表示装置の構成図である。この図に示す表示装置1bが、第1実施形態の表示装置と異なるところは、青色発光素子5bと共に緑色発光素子5gの共振次数m=1で、赤色発光素子5rの共振次数m=0であるところ、さらにはこれを実現するための層構成にあり、他の構成は同様であることとする。
図3は、第3実施形態の表示装置の構成図である。この図に示す表示装置1cが、第1実施形態の表示装置と異なるところは、青色発光素子5bを含む各色の発光素子5r,5g,5bが、共振次数m=1で構成されているところ、さらにはこれを実現するための層構成にあり、他の構成は同様であることとする。
図4は、以上のような表示装置の一構成例を説明するための概略の回路構成図である。この図に示すように、表示装置1a,1b,1cを構成する基板3上には、表示領域3aとその周辺領域3bとが設定されている。表示領域3aには、複数の走査線41と複数の信号線43とが縦横に配線されており、それぞれの交差部に対応して1つの画素が設けられた画素アレイ部として構成されている。また周辺領域3bには、走査線41を走査駆動する走査線駆動回路45と、輝度情報に応じた映像信号(すなわち入力信号)を信号線43に供給する信号線駆動回路47とが配置されている。
以上説明した本発明に係る表示装置は、図6〜図10に示す様々な電子機器、例えば、デジタルカメラ、ノート型パーソナルコンピュータ、携帯電話等の携帯端末装置、ビデオカメラなど、電子機器に入力された映像信号、若しくは、電子機器内で生成した映像信号を、画像若しくは映像として表示するあらゆる分野の電子機器の表示装置に適用することが可能である。以下に、本発明が適用される電子機器の一例について説明する。
図1を用いて説明した第1実施形態の表示装置1aを作製した。共振次数mが、各発光素子5r,5g,5b=(0,0,1)となるように、実施形態で例示した材料を用いて下記表1に示すように発光機能層9を構成する各層の膜厚を設定した。
実施例1と同様に、共振次数mが各発光素子5r,5g,5b=(0,0,1)となるように、下記表2に示すように発光機能層を構成する各層の膜厚を設定した。
図2を用いて説明した第2実施形態の表示装置1bを作製した。共振次数mが、各発光素子5r,5g,5b=(0,1,1)となるように、実施形態で例示した材料を用いて下記表3に示すように発光機能層9を構成する各層の膜厚を設定した。
実施例2と同様に、共振次数mが各発光素子5r,5g,5b=(0,1,1)となるように、下記表4に示すように発光機能層を構成する各層の膜厚を設定した。
図3を用いて説明した第3実施形態の表示装置1cを作製した。共振次数mが、各発光素子5r,5g,5b=(1,1,1)となるように、実施形態で例示した材料を用いて下記表5に示すように発光機能層9を構成する各層の膜厚を設定した。
実施例3と同様に、共振次数mが各発光素子5r,5g,5b=(1,1,1)となるように、下記表6に示すように発光機能層を構成する各層の膜厚を設定した。
以上のようにして作製された実施例1〜3および比較例1〜3の表示装置においては、これらの表示装置を構成する各発光素子に滅点の発生はなかった。
Claims (1)
- 赤色の発光素子、緑色の発光素子および青色の発光素子を基板上に配列してなる表示装置であって、
前記各色の発光素子は、反射電極と半透過電極との間に発光層を含む発光機能層を狭持させた共振構造を有し、
前記青色の発光素子の共振次数が1で、それ以外の前記発光素子の共振次数が0であると共に、
前記発光層以外の発光機能層は当該各色の発光素子に共通であり、かつ前記青色の発光素子は、前記発光機能層を構成する何れかの層からなる共振膜厚の調整層を備える
表示装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007293814A JP4450051B2 (ja) | 2007-11-13 | 2007-11-13 | 表示装置 |
KR1020080106973A KR20090049538A (ko) | 2007-11-13 | 2008-10-30 | 표시 장치 |
US12/268,501 US8227796B2 (en) | 2007-11-13 | 2008-11-11 | Display device |
CN2008101775100A CN101436609B (zh) | 2007-11-13 | 2008-11-13 | 显示装置 |
US13/491,066 US20120241782A1 (en) | 2007-11-13 | 2012-06-07 | Display device |
US13/533,396 US20120261685A1 (en) | 2007-11-13 | 2012-06-26 | Display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007293814A JP4450051B2 (ja) | 2007-11-13 | 2007-11-13 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009123404A JP2009123404A (ja) | 2009-06-04 |
JP4450051B2 true JP4450051B2 (ja) | 2010-04-14 |
Family
ID=40622882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007293814A Expired - Fee Related JP4450051B2 (ja) | 2007-11-13 | 2007-11-13 | 表示装置 |
Country Status (4)
Country | Link |
---|---|
US (3) | US8227796B2 (ja) |
JP (1) | JP4450051B2 (ja) |
KR (1) | KR20090049538A (ja) |
CN (1) | CN101436609B (ja) |
Cited By (2)
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---|---|---|---|---|
KR20150062759A (ko) * | 2013-11-29 | 2015-06-08 | 엘지디스플레이 주식회사 | 유기 발광 장치 |
US9780148B2 (en) | 2014-08-20 | 2017-10-03 | Samsung Display Co., Ltd. | Display device and method for manufacturing the same |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100071539A (ko) * | 2008-12-19 | 2010-06-29 | 삼성전자주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP5312145B2 (ja) * | 2009-03-30 | 2013-10-09 | ユー・ディー・シー アイルランド リミテッド | エレクトロルミネッセンス素子 |
US20100327304A1 (en) * | 2009-06-30 | 2010-12-30 | Shinichiro Sonoda | Organic el device and design method thereof |
CN102474937A (zh) * | 2009-07-06 | 2012-05-23 | 先锋股份有限公司 | 显示装置及其制造方法 |
JP5764289B2 (ja) * | 2009-10-27 | 2015-08-19 | セイコーエプソン株式会社 | 発光装置及び電子機器 |
JP5676949B2 (ja) * | 2010-07-21 | 2015-02-25 | キヤノン株式会社 | 有機el表示装置 |
JP2012109213A (ja) * | 2010-10-27 | 2012-06-07 | Canon Inc | 表示装置 |
KR101960759B1 (ko) * | 2011-04-08 | 2019-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 전자 기기, 및 조명 장치 |
US8922113B2 (en) * | 2012-02-03 | 2014-12-30 | The Regents Of The University Of Michigan | OLED device with integrated reflector |
KR102113034B1 (ko) * | 2013-05-29 | 2020-05-21 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102139577B1 (ko) * | 2013-10-24 | 2020-07-31 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN104851980B (zh) * | 2014-02-13 | 2017-02-08 | 上海和辉光电有限公司 | 全彩有机发光二极管结构 |
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2007
- 2007-11-13 JP JP2007293814A patent/JP4450051B2/ja not_active Expired - Fee Related
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2008
- 2008-10-30 KR KR1020080106973A patent/KR20090049538A/ko not_active Application Discontinuation
- 2008-11-11 US US12/268,501 patent/US8227796B2/en not_active Expired - Fee Related
- 2008-11-13 CN CN2008101775100A patent/CN101436609B/zh not_active Expired - Fee Related
-
2012
- 2012-06-07 US US13/491,066 patent/US20120241782A1/en not_active Abandoned
- 2012-06-26 US US13/533,396 patent/US20120261685A1/en not_active Abandoned
Cited By (6)
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KR20150062759A (ko) * | 2013-11-29 | 2015-06-08 | 엘지디스플레이 주식회사 | 유기 발광 장치 |
KR102085153B1 (ko) * | 2013-11-29 | 2020-03-05 | 엘지디스플레이 주식회사 | 유기 발광 장치 |
US9780148B2 (en) | 2014-08-20 | 2017-10-03 | Samsung Display Co., Ltd. | Display device and method for manufacturing the same |
US10283570B2 (en) | 2014-08-20 | 2019-05-07 | Samsung Display Co., Ltd. | Display device and method for manufacturing the same |
US10665639B2 (en) | 2014-08-20 | 2020-05-26 | Samsung Display Co., Ltd. | Display device and method for manufacturing the same |
US11056542B2 (en) | 2014-08-20 | 2021-07-06 | Samsung Display Co., Ltd. | Display device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
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US20090121239A1 (en) | 2009-05-14 |
JP2009123404A (ja) | 2009-06-04 |
US20120261685A1 (en) | 2012-10-18 |
KR20090049538A (ko) | 2009-05-18 |
CN101436609A (zh) | 2009-05-20 |
US20120241782A1 (en) | 2012-09-27 |
US8227796B2 (en) | 2012-07-24 |
CN101436609B (zh) | 2013-08-14 |
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