JP4329661B2 - Semiconductor device, circuit board, and electro-optical device - Google Patents

Description

  The present invention relates to a semiconductor device, a circuit board, for example, a liquid crystal device, an electro-optical device such as a light emitting device represented by an organic EL (Electro-Luminescence) device, an inorganic EL device, and an electronic apparatus.

As a connection method for mounting a driving IC on a substrate of a liquid crystal display device, for example, COG (Chip On Glass) connection is known. In this COG connection, for example, an Au plating bump is formed on a driving IC and mounted on a counterpart substrate via an anisotropic conductive film (ACF) or anisotropic conductive paste (ACP). Yes.
The Au plating bump is formed by sputtering a seed layer such as TiW / Au on the semiconductor element and patterning the resist, followed by electrolytic Au plating with a height of about 20 μm.

  However, in recent years, as the electrodes of the driving IC are narrowed (narrow gap), it is necessary to form a resist with a high aspect ratio, and it is difficult to form a stable Au plating bump. Further, the gap size of the electrode is close to the size of the conductive fine particles in the anisotropic conductive film (ACF), and there is a possibility that a short circuit occurs due to the conductive fine particles.

  Under such a background, in Patent Document 1, a protrusion made of resin is provided at a position away from the electrode, and a connection pattern (metal layer) covering the electrode and the surface of the protrusion is provided. Techniques for forming the are disclosed. In this technology, the protruding electrodes are pressed against the mating substrate by fixing the relative position between the driving IC and the mating substrate while compressing and deforming the resin projection, improving the reliability of the electrical connection. Can be made.

Also, with this technique, it is only necessary to pattern a metal layer that is thinner than that of the Au plating bump, so that the aspect ratio of the etching resist can be lowered. Further, for the danger of short circuit due to the conductive fine particles, a thermosetting sealing resin or the like in which no conductive fine particles exist can be used. Therefore, it is possible to cope with the narrow pitch of the electrodes.
JP-A-2-272737

However, the protrusion described above is made of a resin material having high hygroscopicity. If this protrusion absorbs moisture, not only will the dimensions of the protrusion itself fluctuate, but there will also be problems such as a decrease in adhesion to the active surface of the driving IC and the metal layer, and corrosion of the metal layer. Arise.
Further, when the protrusions absorb moisture, the elastic force of the protrusions that are compressively deformed is reduced. Therefore, there arises a problem that reliability of electrical connection between the driving IC and the counterpart substrate is lowered.

The present invention has been made to solve the above-described problem, and can prevent moisture absorption of a resin-made protrusion and improve the reliability of electrical connection with a counterpart member. The purpose is to provide.
It is another object of the present invention to provide a circuit board, an electro-optical device, and an electronic apparatus that have excellent electrical connection reliability.

In order to achieve the above object, a semiconductor device of the present invention is provided with an electrode, a protrusion made of a resin material that protrudes outward from the electrode, and a top of the protrusion from above the electrode. In addition, the semiconductor device includes a conductive film electrically connected to the electrode, wherein the entire surface of the protrusion is covered with a moisture-impermeable member.
According to this configuration, it is possible to prevent the protrusion made of the resin material from absorbing moisture and to improve the reliability of the electrical connection with the counterpart member.

In addition, it is preferable that the protrusion is formed for each electrode, and the conductive film includes the moisture-impermeable member, and is formed on the entire surface of the protrusion.
According to this configuration, since the conductive film can function as a non-moisture permeable member, the manufacturing cost can be reduced.

Moreover, it is desirable that the protrusion is formed in a substantially hemispherical shape.
According to this configuration, when the semiconductor device is pressed against the mating member and the projection is compressed and deformed and mounted, the difference in the contact area between the projection and the mating member is large when no pressure is applied. Become. And, for example, it becomes possible to easily inspect the connection reliability by the method of measuring the contact area from the outside of the counterpart transparent substrate, and improve the reliability of the electrical connection with the counterpart member. be able to.

Further, the protrusion is formed in a protrusion along the plurality of electrodes, the entire surface of the protrusion is covered with the moisture-impermeable member having electrical insulation, It is desirable to extend from the top of the electrode to the surface of the moisture-impermeable member at the top of the protrusion and be electrically connected to one of the electrodes.
According to this configuration, a plurality of conductive films can be arranged at a narrow pitch on the top of one protrusion, and it is possible to cope with a narrow pitch of electrodes.

Moreover, it is desirable that the protrusion is formed in a substantially semi-cylindrical shape.
According to this configuration, when the semiconductor device is pressed against the mating member and the projection is compressed and deformed and mounted, the difference in the contact area between the projection and the mating member is large when no pressure is applied. Become. Therefore, it becomes possible to easily inspect the connection reliability, and the reliability of the electrical connection with the counterpart member can be improved.

On the other hand, the circuit board of this embodiment is characterized in that the above-described semiconductor device is mounted.
According to this configuration, moisture absorption of the resin protrusions of the semiconductor device is prevented, so that a circuit board having excellent electrical connection reliability can be provided.

On the other hand, the electro-optical device of this embodiment is characterized by including the above-described semiconductor device or circuit board.
According to this configuration, moisture absorption of the resin protrusions of the semiconductor device is prevented, so that an electro-optical device having excellent electrical connection reliability can be provided.

On the other hand, an electronic apparatus according to the present embodiment includes the above-described circuit board or electro-optical device.
According to this configuration, it is possible to provide an electronic device having excellent electrical connection reliability.

  Embodiments of the present invention will be described below with reference to the drawings. In each drawing used for the following description, the scale of each member is appropriately changed to make each member a recognizable size.

[First Embodiment]
First, the semiconductor device according to the first embodiment of the present invention will be described.
(Semiconductor device)
1A is a partial plan view of the semiconductor device according to the present embodiment, FIG. 1B is a cross-sectional view taken along line AA in FIG. 1A, and FIG. It is a BB arrow directional cross-sectional view in (a). The semiconductor device in the present embodiment may be an individual semiconductor chip on which semiconductor elements are formed, or a semiconductor substrate such as a silicon wafer on which a large number of semiconductor chips are formed. The shape of the semiconductor chip is generally a rectangular parallelepiped (including a cube), but may be other spherical shapes or the like.

  In FIG. 1, reference numeral 1 is a semiconductor device in which a semiconductor element (not shown) is formed, reference numeral 2 is an electrode provided for inputting and outputting electrical signals to the semiconductor device 1, and reference numeral 3 is an active surface of the semiconductor device 1. A protective film (passivation film) provided to protect the electrode, reference numeral 4 is a protrusion formed of a photosensitive insulating resin and arranged at substantially the same pitch as the electrode 2, and reference numeral 5 is a surface of the electrode 2 and the protrusion 4 ( It is a conductive film formed so as to cover the top surface.

  The electrode 2 is formed by sputtering, for example, and further patterned into a predetermined shape (for example, rectangular shape) using a resist or the like. A plurality of such electrodes 2 are formed in the vicinity of the edge of the semiconductor device 1 at a predetermined pitch. In addition, although this electrode 2 shall be formed with Al in this embodiment, other than Al, for example, Ti (titanium) layer, TiN (titanium nitride) layer, AlCu (aluminum / copper) layer, and A structure in which TiN layers (cap layers) are sequentially stacked may be used. Furthermore, the electrode 2 is not limited to the above-described configuration, and may be appropriately changed according to required electrical characteristics, physical characteristics, and chemical characteristics.

  The protective film 3 covers the periphery of the electrode 2 and exposes the electrode 2 in the opening. The protective film 3 is formed with SiO2 (silicon oxide), SiN (silicon nitride), polyimide resin, or the like to a thickness of, for example, about 1 μm. It has been done. Here, the opening through which the electrode 2 is exposed may be sufficiently smaller than the opening in the conventional semiconductor device. Specifically, the opening may be a square (or a rectangle) having one side of about 5 to 10 μm. This is because even if the opening is reduced in this way, the reliability of the electrical connection of the semiconductor device can be ensured if the protruding electrode 8 described later is formed to the same extent as the conventional opening area. In this case, the size of the electrode 2 may be a conventional size, or may be reduced in accordance with the opening of the protective film 3.

  The protrusion 4 is formed on the active surface side of the semiconductor device 1 at a height protruding from the electrode 2 by, for example, about 10 to 20 μm. Moreover, as shown to Fig.1 (a), the diameter when planarly viewed is formed in the hemisphere about 20-50 micrometers. A plurality of such protrusions 4 are formed in the same direction as the electrode 2 and are arranged at substantially the same pitch as the electrode 2. Further, these protrusions 4 are formed of a photosensitive insulating resin, specifically, an acrylic resin, a phenol resin, a silicone resin, a polyimide resin, a silicone-modified polyimide resin, an epoxy resin, or the like. Among these photosensitive insulating resins, an acrylic resin that can be controlled in shape according to exposure conditions and can be easily patterned into a desired shape is preferably used.

  In this embodiment, the conductive film 5 includes a first metal layer 6 and a second metal layer 7 as shown in FIG. The first metal layer 6 serves as a base (seed layer) for the second metal layer 7 formed by electrolytic plating as will be described later. For example, a laminated structure of TiW and Au formed thereon or Cr And a laminated structure of Au formed thereon is preferable. However, other than such a structure, for example, a structure using a single metal such as Au, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, NiV, lead-free solder, or the like of these metals A structure in which several layers are stacked can be employed.

  The second metal layer 7 is selectively formed on the first metal layer 6 by electrolytic plating, and is made of a material having higher corrosion resistance than the electrode 2, for example, Au, and has a thickness of about 0.5 μm to 10 μm, preferably Is formed to about 2 μm. With such a configuration, the second metal layer 7 has a function of preventing corrosion of the electrode 2 and preventing occurrence of electrical failure.

The conductive film 5 composed of the first metal layer 6 and the second metal layer 7 is formed in a rectangular shape in plan view as shown in FIG. 1A, and is electrically connected to the electrode 2 while being entirely connected to the electrode 4. It is extended to. Here, each of the first metal layer 6 and the second metal layer 7 constituting the conductive film 5 shown in FIG. 1C is made of a metal material having non-moisture permeability. Therefore, the conductive film 5 functions as a moisture-impermeable member, and moisture absorption by the resin protrusion 4 is prevented.
The protrusion 4 is composed of the protrusion 4 and the conductive film 5 disposed on the top thereof.

(Method for manufacturing semiconductor device)
Next, a method for manufacturing the semiconductor device described above will be described with reference to FIGS. 2-9 is sectional drawing corresponding to FIG.1 (c), ie, side sectional drawing in the part corresponded to the BB arrow in FIG.1 (a).

  First, as shown in FIG. 2, a plurality of electrodes 2 are arrayed at predetermined positions on the active surface of the semiconductor device 1, and a protective film 3 having an opening that exposes the surface of the electrodes 2 is formed. For the formation of the opening, first, the protective film 3 is formed on the entire active surface of the semiconductor device 1 with SiO 2 (silicon oxide), SiN (silicon nitride), etc., and then a spin coating method, a dipping method, a spray coating method, etc. A resist layer is formed by the above, and an exposure process is performed on the resist layer using a mask on which an opening pattern is drawn, followed by a development process to form an opening (not shown) in the resist layer. Thereafter, the protective film 3 is etched using this resist layer as a mask to form an opening that exposes the electrode 2. Here, dry etching is preferably used for the etching, and reactive ion etching (RIE) is preferably used as the dry etching. However, wet etching can also be used as etching. Note that after the opening is formed in this manner, the resist pattern is removed using a stripping solution or the like.

  Next, as shown in FIG. 3, the above-described resin constituting the protrusion, that is, an acrylic resin to be a positive resist is applied on the protective film 3 to a thickness of, for example, about 10 to 20 μm and further prebaked. Thus, the resin layer 4a is formed.

  Next, as shown in FIG. 4, the mask 9 is positioned and arranged on the resin layer 4a. The mask 9 is made of a glass plate on which a light shielding film such as Cr is formed, and includes a circular light shielding portion 9a corresponding to the planar shape of the protrusion to be formed. In particular, a halftone mask is used in which the light shielding performance gradually decreases from the center to the periphery of the light shielding portion 9a. Note that the mask 9 is positioned so that the light shielding portion 9a is positioned at the position where the protrusion is formed.

  Next, the mask 9 is irradiated with ultraviolet light to expose the resin layer 4a. When exposure is performed in this manner, the exposure amount on the surface of the resin layer 4a gradually increases from the center to the periphery of the light shielding portion 9a of the mask 9. When development processing is performed thereafter, the exposed portion is removed, and as shown in FIG. 5, hemispherical protrusions 4 are formed from the resin layer.

  Next, as shown in FIG. 6, Cr and Au are stacked in this order on the entire surface of the semiconductor device 1 including the upper surfaces of the electrodes 2 and the protrusions 4 by sputtering (sputtering method) to form the first metal layer 6. To do. The thickness of the first metal layer 6 is, for example, about 30 nm for Cr and about 200 nm for Au.

  Next, a resist is applied to the entire surface of the first metal layer 6 by spin coating, dipping, spray coating, or the like to form a resist layer. Then, the resist layer is subjected to an exposure process using a mask on which the plane pattern of the second metal layer is drawn, and further subjected to a development process, whereby the plane pattern of the second metal layer to be formed is shown in FIG. Are formed in the resist layer 10.

  Next, electrolytic plating is performed using the first metal layer 6 exposed from the opening of the resist layer 10 as a seed layer. By this plating process, as shown in FIG. 8, a second metal layer 7 extending from above the electrode 2 to above the protrusion 4 is formed. Here, as the electrolytic plating process, a process of forming an Au plating layer thicker than the first metal layer 6, for example, a process of forming an Au plating layer having a thickness of about 2 μm is employed. Subsequently, as shown in FIG. 9, the resist pattern remaining on the first metal layer 6 is removed.

  Thereafter, the first metal layer 6 exposed around the second metal layer 7 is removed by etching. The etching of the first metal layer 6 is desirably performed using the second metal layer 7 as a mask. In this case, either dry etching or wet etching can be employed. Alternatively, a mask made of a resist pattern may be formed and used for etching.

In this way, as shown in FIG. 1C, the conductive film 5 composed of the first metal layer 6 and the second metal layer 7 is formed. The conductive film 5 is conductively connected to the electrode 2 and extends over the entire surface of the protrusion 4. The protrusion 4 and the conductive film 5 disposed on the top thereof constitute a protrusion electrode 8.
Thereafter, dicing or the like is performed as necessary to obtain a separated semiconductor device.

(Semiconductor device mounting method)
Next, a method for mounting the semiconductor device described above will be described with reference to FIGS. Here, COG (Chip On Glass) connection in which a semiconductor device is mounted on a glass substrate of an electro-optical device will be described as an example.
FIG. 10 shows a state before pressing, FIG. 10 (a) is a side view, and FIG. 10 (b) is a plan view. As shown in FIG. 10, first, the transparent electrode (terminal) 12 of the glass substrate 11 is positioned on the protruding electrode 8 of the semiconductor device 1, and the semiconductor device 1 and the glass substrate 11 are arranged to face each other. Next, a thermosetting sealing resin 20 such as epoxy is filled between the semiconductor device 1 and the glass substrate 11. Note that the sealing resin 20 may be applied on one of the substrates in advance, and then both the substrates may be arranged to face each other.

11 shows a state after pressurization, FIG. 11 (a) is a side view, and FIG. 11 (b) is a plan view. As shown in FIG. 11, next, both substrates are pressurized to press the protruding electrode 8 of the semiconductor device 1 against the transparent electrode 12 of the glass substrate 11. As described above, the protrusions at the cores of the protruding electrodes 8 are made of an elastic resin material. Therefore, when the two substrates are pressurized, the tops of the protruding electrodes 8 are elastically deformed, and both the substrates are Electrically connected. In this state, both the substrates are heated, the sealing resin 20 is cured, and both the substrates are mechanically connected. As a result, the two substrates are fixed in a conductive connection state.
Thus, since the relative position of both the substrates is fixed in a state where the protruding electrode 8 of the semiconductor device 1 is elastically deformed, even if the sealing resin 20 expands due to heat generation during use of the electro-optical device, the protrusion The electrode 8 can hold the state pressed against the transparent electrode 12 of the glass substrate 11. Therefore, the reliability of electrical connection can be improved.

(Inspection of connection reliability)
Next, an electrical connection reliability inspection method for a semiconductor device will be described with reference to FIGS.
First, in the state before pressurization shown in FIG. 10, the protruding electrode 8 is hardly elastically deformed. Therefore, the area of the contact portion C1 between the protruding electrode 8 and the transparent electrode 12 is very small. On the other hand, in the state after pressurization shown in FIG. 11, the top portion of the protruding electrode 8 is elastically deformed and pressed against the transparent electrode 12. For this reason, the area of the contact portion C2 between the protruding electrode 8 and the transparent electrode 12 is remarkably large. Then, the connection state of both can be grasped | ascertained by observing the contact part of the protruding electrode 8 and the transparent electrode 12 from the outer side of the glass substrate 11 using an optical microscope etc., and measuring the contact area. Since such connection reliability inspection can be easily performed, the mounting structure obtained through this inspection process has high connection reliability.

  By the way, as shown in FIG. 11, the sealing resin 20 is filled between the semiconductor device 1 and the glass substrate 11, and the connection portion between the protruding electrode 8 and the transparent electrode 12 is sealed with the sealing resin 20. Yes. However, since this sealing resin has a hygroscopic property, there is a risk that moisture may enter the periphery of the protruding electrode 8. And if the resin-made protrusion which comprises the core part of the protrusion electrode 8 absorbs a water | moisture content, not only the dimension of protrusion itself will change but the adhesive force with the electrically conductive film of the surface may fall, or electrically conductive film This causes problems such as corrosion. Furthermore, the elastic force of the protrusions is reduced, the force for pressing the conductive film against the transparent electrode 12 is weakened, and there is a problem that the reliability of electrical connection is lowered.

  However, the semiconductor device of this embodiment has a configuration in which the entire surface of the protrusion 4 is covered with the conductive film 5 as shown in FIGS. 1 (a) and 1 (c). The first metal layer 6 and the second metal layer 7 constituting the conductive film 5 are both non-moisture permeable. Note that silicon oxide and silicon nitride constituting the protective film 3 under the protrusion 4 are also non-moisture permeable materials. Therefore, it is possible to prevent moisture that has entered the periphery of the protruding electrode 8 from being absorbed by the protruding body. Thereby, the dimensional change of a protrusion, the fall of the adhesive force with an electrically conductive film, corrosion of an electrically conductive film, etc. can be prevented. Furthermore, it is possible to prevent a decrease in the elastic force of the protrusion, and the reliability of the electrical connection of the protrusion electrode 8 can be improved.

  In addition, in the semiconductor device of this embodiment, since the protruding electrode 8 is composed of the protruding body 4 and the conductive film 5 on the surface thereof, the protruding electrode 8 can be formed by patterning the thin conductive film 5. it can. Therefore, it is not necessary to increase the aspect ratio of the resist used for patterning, and the pitch of the protruding electrodes 8 can be reduced. Further, since it is not necessary to use an anisotropic conductive film or anisotropic conductive paste for mounting a semiconductor device, the mounting cost can be reduced.

[Second Embodiment]
Next, a semiconductor device according to a second embodiment of the present invention will be described.
The second embodiment is different from the first embodiment in that the conductive film is formed of a single metal layer without being formed of a plurality of metal layers. Note that detailed description of portions having the same configuration as in the first embodiment is omitted.

In the second embodiment, after forming the protrusions 4 as shown in FIG. 5, Cr and Au are deposited and laminated in this order on the entire surface of the semiconductor device 1 by, for example, sputtering as shown in FIG. Layer 13 is formed.
Next, a resist is applied to the entire surface of the metal layer 13 by a spin coating method, a dipping method, a spray coating method, or the like to form a resist layer. Then, the resist layer is subjected to an exposure process using a mask on which a planar pattern of the conductive film to be formed is drawn, and further developed to form a resist layer 14 as shown in FIG. To form a planar pattern.

Next, the metal layer 13 exposed without being covered with the resist layer 14 is removed by etching, and the conductive film 5 is formed as shown in FIG. As the etching here, for example, any method such as dry etching using plasma or wet etching using a chemical solution may be employed.
Thereafter, the resist layer is removed as shown in FIG. A protruding electrode 8 is formed by the protruding body 4 and the conductive film 5 formed on the surface thereof.

  In such a semiconductor device of the second embodiment, the same effect as that of the first embodiment can be obtained. That is, since the entire surface of the protrusion 4 is covered with the conductive film 5 and the metal layer 13 constituting the conductive film 5 is impermeable to moisture, absorption of moisture by the protrusion 4 can be prevented. Thereby, the dimensional change of the protrusion 4, the fall of the adhesive force with the electrically conductive film 5, the corrosion of the electrically conductive film 5, etc. can be prevented. Furthermore, it becomes possible to prevent the elastic force of the protrusion 4 from being lowered, and the reliability of the electrical connection of the protrusion electrode 8 can be improved.

  In each of the above-described embodiments, the above-described Au, TiW, Cu, Ni, and the like are used as the material for forming the first metal layer 6 and the second metal layer 7 shown in FIG. 1C and the metal layer 13 shown in FIG. Without being limited to metal materials such as Pd, Al, Cr, Ti, W, NiV, and lead-free solder, a conductive resin can also be used. As a patterning method for the conductive film made of the conductive resin, a printing method or the like can be employed in addition to the photolithography method.

[Third Embodiment]
Next, a semiconductor device according to a third embodiment of the present invention will be described.
This third embodiment is different from the first embodiment in that the shape of the protrusion to be formed is a semi-cylindrical shape instead of a hemispherical shape. Note that detailed description of portions having the same configuration as in the first embodiment is omitted.

  That is, in the third embodiment, as shown in FIG. 16, a semi-cylindrical member is formed as the protrusion 15 made of a photosensitive insulating resin. The semi-cylindrical protrusion 15 is formed so that its length direction is parallel to the arrangement direction of the electrodes 2. A plurality of conductive films 16 connected to the plurality of electrodes 2 are formed so as to be placed on the tops of the protrusions 15, respectively.

In order to form such a semi-cylindrical protrusion 15, a rectangular shape corresponding to the planar shape of the semi-cylindrical protrusion 15 to be formed as a mask, particularly when a layer made of a photosensitive insulating resin is exposed. The thing provided with the light-shielding part is used. In particular, a halftone mask is adopted in which the light shielding performance gradually decreases from the center to the periphery in the short side direction of the light shielding portion.
Then, the mask is disposed on the resin layer. Note that the mask positioning is performed in the same manner as in the first embodiment so that the light shielding portion is positioned at the position where the protrusion is formed.

  Subsequently, the mask is irradiated with ultraviolet light to expose the resin layer. When exposure is performed in this manner, the exposure amount on the surface of the resin layer gradually increases from the center to the periphery in the short side direction of the light shielding portion of the mask. When development processing is performed thereafter, the exposed portion is removed, and as shown in FIG. 16, a long and narrow semi-cylindrical protrusion 15 is formed from the resin layer.

  In the third embodiment, the entire surface of the protrusion 15 is covered with a moisture-impermeable member having electrical insulation. As such a moisture-impermeable member, an inorganic insulating film 18 made of, for example, SiO2 (silicon oxide) may be formed. In order to form the inorganic insulating film 18, first, a silicon oxide film is formed on the entire surface of the semiconductor device 1 by a CVD method or the like. Next, the silicon oxide film formed on the outer side of the protrusion 15 is removed leaving a predetermined width. This coating can be removed by utilizing a photolithography technique and dry etching. Thus, the inorganic insulating film 18 that covers the entire surface of the protrusion 15 is formed.

  Thereafter, the conductive film 16 is formed in the same manner as in the second embodiment. Then, the protruding electrode 17 is formed by the protruding body 15 and the conductive film 16 formed thereabove. In addition, about formation of the electrically conductive film 16, the structure of 1st Embodiment may be employ | adopted and electroconductive resin may be employ | adopted.

  The semiconductor device 1 according to the third embodiment can achieve the same effects as those of the first embodiment. That is, since the entire surface of the protrusion 15 is covered with the moisture-impermeable inorganic insulating film 18, moisture absorption by the protrusion 15 can be prevented. Thereby, the dimensional change of the protrusion 15, the decrease in the adhesive force with the conductive film 16, the corrosion of the conductive film 16, and the like can be prevented. Furthermore, it becomes possible to prevent the elastic force of the protrusion 15 from being lowered, and the reliability of the electrical connection of the protrusion electrode 17 can be improved.

  In addition, since it is not necessary to cover the whole surface of a protrusion with a electrically conductive film like 1st Embodiment, it is sufficient if the electrically conductive film 16 of 3rd Embodiment is formed a little wider than the electrode 2. FIG. Therefore, in the semiconductor device 1 according to the third embodiment, the protruding electrodes 17 can be formed with a narrow pitch as compared with the first embodiment. In addition, since the entire surface of the protrusion 15 is covered with the inorganic insulating film 18, a short circuit between the plurality of conductive films 16 can be prevented.

Even when the semiconductor device 1 of the third embodiment is mounted on a glass substrate, the connection reliability can be inspected as in the first embodiment.
That is, in a state before the semiconductor device 1 is pressed against the glass substrate, the contact portion between the protruding electrode 17 and the transparent electrode is substantially linear, and the contact area becomes very small. On the other hand, in the state after the semiconductor device 1 is pressed against the glass substrate, the top portion of the protruding electrode 17 is elastically deformed, so that the contact area with the transparent electrode is remarkably increased. Therefore, by measuring the contact area, it is possible to grasp the connection state between the two. Therefore, the reliability of electrical connection of the semiconductor device 1 can be improved.

(Electro-optical device)
FIG. 17 is a perspective view showing a schematic configuration of a liquid crystal display device as an embodiment of the circuit board and the electro-optical device of the invention. The liquid crystal display device shown in FIG. 17 includes a color liquid crystal panel 51 as an electro-optical panel and a COF (Chip On Film) type circuit board 100 connected to the liquid crystal panel 51. The circuit board 100 includes a semiconductor device 101 manufactured by the semiconductor device manufacturing method. Based on such a configuration, the circuit board 100 is an embodiment of the circuit board of the present invention, and the liquid crystal display device is an embodiment of the electro-optical device of the present invention. In the liquid crystal display device, an illumination device such as a backlight and other incidental devices are attached to the liquid crystal panel 51 as necessary. Further, the circuit board 100 is not limited to the COF type, and a COB (Chip On Board) type can also be used.

In addition to the COF type and the COB type, the present invention also applies to a COG (Chip On Glass) type electro-optical device in which a driving IC or the like is directly mounted on a display panel (liquid crystal panel). Applicable. FIG. 18 shows an example of a COG type liquid crystal display device.
In this figure, a liquid crystal display device 50 as an electro-optical device includes a frame-shaped shield case 68 made of a metal plate, a liquid crystal panel 52 as an electro-optical panel, a liquid crystal driving LSI 58, and the overall strength. And a holding member 172.

  The liquid crystal panel 52 includes a first substrate 53 provided with a first transparent electrode layer on the inner surface and a second substrate 54 provided with a second transparent electrode layer on the inner surface so as to face each other. Has been. Further, a liquid crystal composition (not shown) is sealed between these substrates. A liquid crystal driving LSI 58 is mounted on one substrate 54 to form a COG type liquid crystal panel 52. The liquid crystal driving LSI 58 relates to the semiconductor device of each of the above embodiments.

  Note that the electro-optical device of the present invention includes a device having an electro-optic effect that changes the light transmittance by changing the refractive index of a substance by an electric field, and a device that converts electric energy into optical energy. ing. That is, the present invention is not limited to a liquid crystal display device, but an organic EL (Electro-Luminescence) device, an inorganic EL device, a plasma display device, an electrophoretic display device, and a display device using an electron-emitting device (Field Emission Display and Surface- It can also be widely applied to light emitting devices such as Conduction Electron-Emitter Display.

  FIG. 19 is a cross-sectional view of an organic EL panel provided in an organic EL display device. The organic EL panel (electro-optical panel) 30 is generally configured by forming a TFT (Thin Film Transistor) 32 on a substrate 31 and forming an organic EL element 33 thereon. The TFT 32 has a source electrode, a gate electrode, and a drain electrode. The organic EL element 33 includes a pixel electrode 34, a hole injection layer 35, a light emitting layer 36, and a cathode 37. Although not shown, for example, the semiconductor device shown in FIG. 1 is mounted on the end of the organic EL panel as a driving LSI for the organic EL element. Any one of the protruding electrodes 8 and the gate electrode or the source electrode of the TFT 32 shown in FIG. 19 are electrically connected. The drain electrode of the TFT 32 is connected to the pixel electrode 34 of the organic EL element 33.

  In the organic EL panel 30 having the above configuration, when the TFT 32 is in the ON state, a current is supplied from the source electrode of the TFT 32 to the pixel electrode 34 via the drain electrode. Then, the holes injected from the pixel electrode 34 into the light emitting layer 36 through the hole injection layer 35 and the electrons injected from the cathode 37 into the light emitting layer 36 are recombined in the light emitting layer 36. Flashes. The light is emitted from the substrate 31 side.

(Electronics)
Next, an electronic apparatus in which the above-described electro-optical device is mounted will be described. Electronic components such as a liquid crystal display device as an electro-optical device described above, a motherboard having a CPU (central processing unit), a keyboard, a hard disk, and the like are incorporated in the housing. For example, a notebook personal computer shown in FIG. 60 (electronic equipment) is manufactured.

  FIG. 20 is an external view showing a notebook computer as an electronic apparatus according to an embodiment of the present invention. In FIG. 20, 61 is a housing, 62 is a liquid crystal display device (electro-optical device), and 63 is a keyboard. Note that FIG. 20 shows a notebook computer provided with a liquid crystal display device, but an organic EL display device may be provided instead of the liquid crystal display device.

  In the above-described embodiment, a notebook computer has been described as an example of the electronic device. However, the present invention is not limited to this, and is not limited thereto. It can be applied to electronic devices such as pagers, word processors, televisions, viewfinder type or monitor direct-view type video tape recorders, electronic notebooks, electronic desk calculators, car navigation devices, POS terminals, and devices equipped with touch panels. .

The technical scope of the present invention is not limited to the above-described embodiments, and includes those in which various modifications are made to the above-described embodiments without departing from the spirit of the present invention. That is, the specific materials and configurations described in the embodiments are merely examples, and can be changed as appropriate.
For example, an electronic component can be manufactured by replacing the “semiconductor chip” or “semiconductor element” in the above-described embodiments with an “electronic element”. Examples of electronic components manufactured using such electronic elements include optical elements, resistors, capacitors, coils, oscillators, filters, temperature sensors, thermistors, varistors, volumes, and fuses.

1 is a schematic configuration diagram of a semiconductor device according to a first embodiment. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. It is explanatory drawing of an inspection method, (a) is a side view, (b) is a top view. It is explanatory drawing of an inspection method, (a) is a side view, (b) is a top view. It is a manufacturing process figure of the semiconductor device concerning a 2nd embodiment. It is a manufacturing process figure of the semiconductor device concerning a 2nd embodiment. It is a manufacturing process figure of the semiconductor device concerning a 2nd embodiment. It is a manufacturing process figure of the semiconductor device concerning a 2nd embodiment. It is a schematic block diagram of the semiconductor device which concerns on 3rd Embodiment. It is a perspective view which shows schematic structure of a liquid crystal display device. It is a disassembled perspective view of the liquid crystal display device which employ | adopted the COG junction structure. It is sectional drawing of an organic electroluminescent panel. It is a perspective view of a notebook computer.

Explanation of symbols

  2. Electrode 4. Projection 5. Conductive film

Claims (5)

An electrode, a protrusion made of an insulating resin material formed to have a height protruding from the electrode, and extended from the top of the electrode to the top of the protrusion and electrically connected to the electrode. A semiconductor device having a conductive film,
The protrusion is formed in a protrusion along the plurality of the electrodes,
The entire surface of the protrusion is covered with a moisture-impermeable member having electrical insulation,
The semiconductor device, wherein the conductive film extends from one electrode to the surface of the moisture-impermeable member at the top of the protrusion and is electrically connected to one electrode.   The semiconductor device according to claim 1, wherein the protrusion is formed in a semi-cylindrical shape, and a length direction thereof is disposed along the plurality of electrodes.   A circuit board on which the semiconductor device according to claim 1 or 2 is mounted. Electro-optical apparatus comprising the semiconductor equipment according to claim 1 or claim 2. An electro-optical device comprising the circuit board according to claim 3.

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