JP3741931B2 - Method for manufacturing electronic circuit device - Google Patents
Method for manufacturing electronic circuit device Download PDFInfo
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- JP3741931B2 JP3741931B2 JP2000119755A JP2000119755A JP3741931B2 JP 3741931 B2 JP3741931 B2 JP 3741931B2 JP 2000119755 A JP2000119755 A JP 2000119755A JP 2000119755 A JP2000119755 A JP 2000119755A JP 3741931 B2 JP3741931 B2 JP 3741931B2
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- Prior art keywords
- sealing resin
- insulating coating
- flexible substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は、携帯機器等や、電子手帳または、液晶表表示装置に使用されているドライバーICやメモリーIC,コントローラIC等がベアチップ実装されている電子回路装置に関する。
【0002】
【従来の技術】
従来、このような分野の電子回路装置に用いられている技術としては以下のようなものが知られている。
【0003】
半導体ベアチップのフェイスダウン実装に用いられるICにはパッドにバンプと呼ばれる突起電極が半田、金、銀、銅、ニッケル、パラジウム、等の材質を、単独または組み合わせて、メッキ、蒸着、スパッタリング、印刷、ワイヤーボンディング、等の工法により形成されている。
【0004】
回路基板との接合はバンプを介して導電性接着剤や、異方性導電接着剤、電極間の接触(メカニカルコンタクト)、金属の拡散・溶融・共晶、等々により行われる。
【0005】
回路基板はフレキシブル基板を用いる場合、ポリイミドやPETの絶縁フィルム上に、銅薄やアルミ薄が接着剤によって張り合わされるか、直接形成され、ウエットまたはフォトプロセスにより導体パターンが形成される。導体パターン上の接合部以外にはパターン保護の目的でオーバーコートやレジストと呼ばれる絶縁被膜が形成されている。厚さは数μmから数100μm程度である。部品との接合部は開口し、パターンと接合をとれるようにする。開口部の形成は印刷法やフォトプロセス法を用いる。図6にIC実装部を示す。図示するように、フレキシブル基板1にはIC3の周辺部にマージンをとってIC外形よりひとまわり(0.1mm〜数mm程度)大きく絶縁被膜に窓2を開口する。開口部の導体パターン上には接合方式によっては錫、半田、金、ニッケル、パラジウム、銀、等が単独または組み合わせた状態で、メッキ、印刷、ディッピング、等の方法で形成されている。
【0006】
IC接合部の保護・補強のための封止樹脂は液体の状態でIC周辺に塗布することで供給され、流動することによってICとフレキシブル基板の隙間およびICの周辺に充填され、熱・UV・光・嫌気状態・2液の反応、等の単独または組み合わせにより硬化する。封止剤はエポキシ系やアクリル系または両者を併せた樹脂が使用され、熱膨張や粘度、硬化条件等の各種特性に併せた添加剤、フィラー等が含まれる場合もある。また、塗布時には粘度調整のため、基板や樹脂自身に熱を加える場合もある。
【0007】
【発明が解決しようとする課題】
フレキシブル基板上で絶縁被膜の表面が、硬化前の封止樹脂に対する濡れ広がり性が低い(すなわち、撥水性が高い)場合、封止樹脂と絶縁被膜の接触角は大きくなる。
【0008】
その結果、IC周辺に封止樹脂を塗布したときに、絶縁被膜上に封止樹脂が滞留し、ICとフレキシブル基板の隙間およびICの周辺に充填されない場合があるという問題点があった。これを、図7及び図8を用いて説明する。フレキシブル基板1は、絶縁フィルム9上に形成された導体配線8と、さらにその上に設けられた絶縁被膜を有しており、ICチップ3に形成されたバンプ6と導体配線8が接続されている。封止樹脂と絶縁被膜の接触角が大きいと、絶縁被膜窓部2に塗布された封止樹脂5は、図示するように、絶縁被膜上に封止樹脂5が滞留し、IC3とフレキシブル基板1の隙間やIC3の周辺に充填されない。
【0009】
また、封止樹脂の充填性を改善するためにICの周辺部のマージンを大きくとって絶縁被膜に窓を大きくあけると、露出したパターンを保護するために封止樹脂が大量に必要になったり、絶縁コートにも封止樹脂にも保護されない導体パターン部が発生したりする。その結果、コストや工数が増大する、信頼性が低下するといった問題点が発生する。
【0010】
そこで、本発明においては、コストや工数の増大を抑えつつ、信頼性を維持でき、かつ封止樹脂の充填性を飛躍的に高めることができる電子回路装置を提供することを目的としている。
【0011】
【問題が解決するための手段】
本発明の電子回路装置は、絶縁フィルムに導体配線が形成してあり表面の一部に絶縁被膜が施されているフレキシブル基板に、バンプを形成したICがフェイスダウンで接続され、ICとフレキシブル基板の隙間及び周辺部には封止樹脂が塗布・充填され硬化している。
【0012】
そして、フレキシブル基板の絶縁被膜はIC周囲において封止樹脂塗布部付近をスリット形状またはくさび形状に形成することにより、封止樹脂は濡れ広がり性の良好な、絶縁被膜を含まない部分(すなわち、スリットまたはくさび部)を含んだ位置に塗布されるので、絶縁被膜の窓を必要以上に大きくあけずに封止樹脂塗布後スリット部またはくさび部を経由してICチップまで誘導されICチップとフレキシブル基板の隙間およびICチップの周囲に充填することが可能になる。
【0013】
【発明の実施の形態】
以下に本発明の電子回路装置を図面に基づいて説明する。
【0014】
図1は封止樹脂塗布前の上面図である。フレキシブル基板1にはICチップ3の実装部の周辺に絶縁被膜窓2が空いている。また、封止樹脂の塗布部であるICチップの4角のやや外側には、絶縁被膜窓2とつながるように、外側方向に絶縁被膜スリット部4が合計4カ所に形成されている。
【0015】
図2は封止樹脂塗布直後のIC付近の上面図である。絶縁被膜スリット部4付近に塗布された封止樹脂5は、絶縁被膜の撥水性の影響を最小限に抑えて、スムースに絶縁被膜スリット部4を経由して絶縁被膜窓2に流れ込み、さらに、ICチップ3の周辺とフレキシブル基板1の隙間およびICチップ3の周囲に充填されて行く。
【0016】
図3は封止樹脂塗布後の絶縁被膜スリット部付近の断面図である。ICチップ3とフレキシブル基板は、ICチップ3に形成されたバンプ6と、絶縁フィルム9上に形成された導体配線8とで接続されている。絶縁被膜スリット部4に塗布された封止樹脂5は、ICチップ3の周辺とフレキシブル基板の隙間およびICチップ3の周辺部に流れ込み充填されている。
【0017】
図4に、本発明による封止樹脂充填後のIC付近の上面図を示す。一定時間経過後、封止樹脂5はICチップ3の周辺とフレキシブル基板の隙間およびICチップ3の周辺部にきれいに充填されている。この後、封止樹脂5を硬化することにより、本発明における電子回路装置が完成する。
【0018】
図5は他の実施例による封止樹脂塗布前の上面図である。本実施例では、封止樹脂5をICチップ3の長辺側側面の中央部2点付近に塗布する場合を示し、塗布部付近には絶縁被膜窓2につながるように絶縁被膜くさび部10が2カ所に形成されている。封止樹脂塗布時には、前述の実施例と同様に絶縁被膜の撥水性の影響を最小限に抑えて、スムースに絶縁被膜くさび部10を経由して絶縁被膜窓2に流れ込みさらに、ICチップ3周辺とフレキシブル基板1の隙間およびICチップ3の周囲に充填されて行くことが可能となる。
【0019】
上述した各実施例は代表的な構成を示したもので、実際は絶縁被膜スリット部や絶縁被膜くさび部の個数、位置、形状、組み合わせは、ICの大きさ、封止樹脂の塗布位置・塗布量、絶縁被膜及び導体配線の仕様、等に合わせて任意に設定出来る。
【0020】
絶縁被膜スリット部の形状は(絶縁被膜窓とつながっている場合はつながっている部分を1辺として考えると)細い隙間(スリット)がイメージされる台形、長方形、三角形、曲線を含む形状のいずれかで、幅10μmから2mm程度、長さは100μmから5mm程度、ICに対する角度はIC形状が長方形であるとすると、各辺から、スリット中心線の角度が30度から150度程度の範囲で設定する。
【0021】
絶縁被膜くさび部の形状は(絶縁被膜窓とつながっている場合はつながっている部分を1辺として考えると)くさびがイメージされる三角形、曲線を含む形状のいずれかで、幅10μmから5mm程度、長さは50μmから5mm程度の範囲で設定する。
【0022】
絶縁被膜スリット部や絶縁被膜くさび部の位置は、封止樹脂の塗布位置を含むか、近く(最短部が塗布位置中心から2mm程度の距離以内)であり、IC付近に封止樹脂を誘導できる位置・角度である必要がある。封止樹脂塗布位置としては、IC及び絶縁被膜窓の角付近や、角辺の中心部、等分割部、等への1点から20点塗布程度、または辺に沿った線塗布を1から8カ所程度、または点塗布と線塗布の組み合わせで2から8カ所程度、の範囲で設定する。
【0023】
封止樹脂の塗布量は1カ所あたり、0.001mgから5g程度の範囲で設定する。
【0024】
【発明の効果】
本発明の電子回路装置によれば、フレキシブル基板の絶縁被膜をIC周囲の封止樹脂が塗布される部分がスリット形状またはくさび形状に形成されているために、封止樹脂は濡れ広がり性の良好な、絶縁被膜を含まない部分に塗布されることとなり、絶縁被膜の窓を必要以上に大きくあけずに封止樹脂塗布後スリット部を経由してスムースに誘導されICチップとフレキシブル基板の隙間およびICチップの周囲に充填することが可能になる。
【0025】
すなわち、コストや工数の増大を抑えつつ、信頼性を維持でき、かつ封止樹脂の充填性を飛躍的に高めることができる電子回路装置を提供することができる。
【図面の簡単な説明】
【図1】本発明の封止樹脂塗布前の上面図。
【図2】本発明の封止樹脂塗布直後のIC付近の上面図。
【図3】本発明の封止樹脂塗布後の絶縁被膜スリット部付近の断面図。
【図4】本発明の封止樹脂充填後のIC付近の上面図。
【図5】本発明の他の実施例の封止樹脂塗布前の上面図。
【図6】従来の封止樹脂塗布前の上面図。
【図7】従来の封止樹脂塗布後のIC付近の上面図。
【図8】従来の封止樹脂塗布部付近の断面図。
【符号の説明】
1 フレキシブル基板
2 絶縁被膜窓
3 ICチップ
4 絶縁被膜スリット部
5 封止樹脂
6 バンプ
7 絶縁被膜
8 導体配線
9 絶縁フィルム
10 絶縁被膜くさび部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electronic circuit device in which a driver IC, a memory IC, a controller IC, etc. used in a portable device or the like, an electronic notebook or a liquid crystal display device are mounted on a bare chip.
[0002]
[Prior art]
Conventionally, the following techniques are known as techniques used in electronic circuit devices in such fields.
[0003]
ICs used for face-down mounting of semiconductor bare chips have bumps on the pads that have bump electrodes called solder, gold, silver, copper, nickel, palladium, etc., alone or in combination, plating, vapor deposition, sputtering, printing, It is formed by a method such as wire bonding.
[0004]
Bonding to the circuit board is performed by conductive adhesive, anisotropic conductive adhesive, contact between electrodes (mechanical contact), metal diffusion / melting / eutectic, etc. via bumps.
[0005]
When a flexible substrate is used as the circuit board, a copper thin film or aluminum thin film is laminated on an insulating film of polyimide or PET by an adhesive or directly formed, and a conductor pattern is formed by a wet or photo process. An insulating film called an overcoat or a resist is formed for the purpose of pattern protection other than the joint on the conductor pattern. The thickness is about several μm to several 100 μm. The joint with the part is opened so that the pattern can be joined. The opening is formed using a printing method or a photo process method. FIG. 6 shows the IC mounting unit. As shown in the figure, a
[0006]
The sealing resin for protecting and reinforcing the IC joint is supplied by applying it around the IC in a liquid state, and by flowing, it fills the gap between the IC and the flexible substrate and the periphery of the IC. It is cured by light, anaerobic condition, reaction of two liquids alone or in combination. As the sealant, an epoxy-based resin, an acrylic-based resin, or a resin in which both are combined is used, and additives, fillers, and the like that are combined with various properties such as thermal expansion, viscosity, and curing conditions may be included. In addition, heat may be applied to the substrate or the resin itself for viscosity adjustment during application.
[0007]
[Problems to be solved by the invention]
When the surface of the insulating coating on the flexible substrate has low wettability with respect to the sealing resin before curing (that is, high water repellency), the contact angle between the sealing resin and the insulating coating is increased.
[0008]
As a result, when the sealing resin is applied to the periphery of the IC, the sealing resin stays on the insulating coating, and there is a problem that the gap between the IC and the flexible substrate and the periphery of the IC may not be filled. This will be described with reference to FIGS. The
[0009]
In addition, if a large window is opened in the insulating film with a large margin at the periphery of the IC in order to improve the filling property of the sealing resin, a large amount of the sealing resin may be required to protect the exposed pattern. In other words, a conductor pattern portion that is not protected by either the insulating coating or the sealing resin is generated. As a result, problems such as an increase in cost and man-hours and a decrease in reliability occur.
[0010]
Accordingly, an object of the present invention is to provide an electronic circuit device capable of maintaining reliability and dramatically increasing the filling property of the sealing resin while suppressing an increase in cost and man-hours.
[0011]
[Means for solving problems]
In the electronic circuit device of the present invention, an IC on which bumps are formed is connected face-down to a flexible substrate in which a conductor wiring is formed on an insulating film and an insulating coating is applied to a part of the surface. Sealing resin is applied and filled in the gaps and the peripheral part of the gap and cured.
[0012]
Then, the insulating coating of the flexible substrate is formed in a slit shape or a wedge shape in the vicinity of the sealing resin application portion around the IC, so that the sealing resin has a good wettability and does not include the insulating coating (that is, the slit Or the wedge portion), so that the insulating coating window is not opened more than necessary, and after application of the sealing resin, it is guided to the IC chip via the slit portion or the wedge portion. It is possible to fill the gap and the periphery of the IC chip.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
The electronic circuit device of the present invention will be described below with reference to the drawings.
[0014]
FIG. 1 is a top view before the sealing resin is applied. In the
[0015]
FIG. 2 is a top view of the vicinity of the IC immediately after application of the sealing resin. The sealing
[0016]
FIG. 3 is a cross-sectional view of the vicinity of the insulating coating slit after application of the sealing resin. The
[0017]
FIG. 4 shows a top view of the vicinity of the IC after the sealing resin is filled according to the present invention. After a certain period of time, the
[0018]
FIG. 5 is a top view before the sealing resin is applied according to another embodiment. In this embodiment, a case where the sealing
[0019]
Each example described above shows a typical configuration. Actually, the number, position, shape, and combination of the insulating coating slit portion and the insulating coating wedge portion are the size of the IC, the application position and the application amount of the sealing resin. It can be set arbitrarily according to the specifications of the insulation coating and conductor wiring.
[0020]
The shape of the insulating coating slit (if it is connected to the insulating coating window is considered as one side), any of the shapes including trapezoids, rectangles, triangles, and curves that image a narrow gap (slit) Then, assuming that the width is about 10 μm to 2 mm, the length is about 100 μm to 5 mm, and the angle with respect to the IC is a rectangle of the IC shape, the angle of the slit center line is set within a range of about 30 to 150 degrees from each side. .
[0021]
The shape of the wedge portion of the insulating coating (if it is connected to the insulating coating window is considered to be one side), the shape of the wedge is a triangle or a shape including a curve, with a width of about 10 μm to 5 mm, The length is set in the range of about 50 μm to 5 mm.
[0022]
The position of the insulating coating slit portion or the insulating coating wedge portion includes or is close to the sealing resin application position (the shortest part is within a distance of about 2 mm from the center of the application position), and the sealing resin can be guided near the IC. Must be a position / angle. As the sealing resin application position, about 1 to 20 points of application to the vicinity of the corners of the IC and the insulating coating window, the central part of the corner, the equally divided part, etc., or the line application along the side is 1 to 8 It is set in the range of about two places or about two to eight places by a combination of dot coating and line coating.
[0023]
The application amount of the sealing resin is set in a range of about 0.001 mg to 5 g per place.
[0024]
【The invention's effect】
According to the electronic circuit device of the present invention, the insulating resin coating on the flexible substrate is formed in a slit shape or a wedge shape in the portion where the sealing resin around the IC is applied. It will be applied to the part that does not contain the insulation coating, and it will be smoothly guided through the slit after applying the sealing resin without opening the window of the insulation coating more than necessary, and the gap between the IC chip and the flexible substrate and It becomes possible to fill around the IC chip.
[0025]
That is, it is possible to provide an electronic circuit device capable of maintaining reliability and dramatically increasing the filling property of the sealing resin while suppressing an increase in cost and man-hours.
[Brief description of the drawings]
FIG. 1 is a top view before applying a sealing resin of the present invention.
FIG. 2 is a top view of the vicinity of an IC immediately after application of a sealing resin according to the present invention.
FIG. 3 is a cross-sectional view of the vicinity of an insulating coating slit portion after application of a sealing resin according to the present invention.
FIG. 4 is a top view of the vicinity of an IC after filling with a sealing resin of the present invention.
FIG. 5 is a top view of another embodiment of the present invention before application of a sealing resin.
FIG. 6 is a top view before applying a conventional sealing resin.
FIG. 7 is a top view of the vicinity of an IC after applying a conventional sealing resin.
FIG. 8 is a cross-sectional view of the vicinity of a conventional sealing resin application portion.
[Explanation of symbols]
DESCRIPTION OF
Claims (1)
バンプが形成されたICを前記絶縁被膜の窓部で前記フレキシブル基板にフェイスダウン実装する工程と、
前記絶縁フィルムは前記絶縁被膜より濡れ性が良好であり、また、前記絶縁被膜には前記窓と連続するスリット部またはくさび部が形成されており、前記スリット部またはくさび部と、前記絶縁被膜にまたがるように封止樹脂を塗布する工程と、
前記ICと前記フレキシブル基板の間隙に流れ込んで充填された前記封止樹脂を硬化する工程と、を備えることを特徴とする電子回路装置の製造方法。A process for producing a flexible substrate by providing a conductive wiring and an insulating film having a window on the insulating film;
A step of face-down mounting the IC on which the bump is formed on the flexible substrate at the window portion of the insulating coating;
The insulating film has better wettability than the insulating coating, and the insulating coating is formed with a slit portion or a wedge portion continuous with the window. The slit portion or the wedge portion and the insulating coating are formed on the insulating coating. Applying a sealing resin so as to straddle ;
And a step of curing the sealing resin filled into the gap between the IC and the flexible substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000119755A JP3741931B2 (en) | 2000-04-20 | 2000-04-20 | Method for manufacturing electronic circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
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