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JP3604952B2 - Hybrid integrated circuit device - Google Patents

Hybrid integrated circuit device Download PDF

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Publication number
JP3604952B2
JP3604952B2 JP16250999A JP16250999A JP3604952B2 JP 3604952 B2 JP3604952 B2 JP 3604952B2 JP 16250999 A JP16250999 A JP 16250999A JP 16250999 A JP16250999 A JP 16250999A JP 3604952 B2 JP3604952 B2 JP 3604952B2
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Japan
Prior art keywords
integrated circuit
hybrid integrated
circuit board
circuit device
resin
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JP16250999A
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JP2000353768A (en
Inventor
昌巳 茂木
則明 坂本
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

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  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、混成集積回路装置であり、特にケース材を不要とし、且つ封止された樹脂表面のフラット性を維持できる混成集積回路装置に関するものである。
【0002】
【従来の技術】
まず一般に図5の様な混成集積回路装置があり、これは例えば特公昭61−55247号が詳しい。
【0003】
つまり混成集積回路装置は、金属基板1と、この表面に絶縁材料2が被覆され、この上に接着されたCuよりなる導電パターン3、4と、この導電パターン3、4と電気的に接続された半導体素子等の回路素子5と、この導電パターンの一部であるパッド3と半田を介して固着された外部リード6と、前記回路素子5を電気的に接続する金属細線7およびこれらをモールドする樹脂8とを有している。
【0004】
つまり放熱性が考慮されて基板1の裏面が露出されているものである。
【0005】
製造方法として色々あるが、第1の製造方法は、まず図4に示すように回路素子3、4および外部リード6が取り付けられた金属基板を用意し、図5に示すケース材9を貼り付け、ケース材9と金属基板1で成る空間に樹脂を塗布する事で実現されていた。
【0006】
また第2の製造方法は、図4の混成集積回路基板を用意し、これを金型にセットし、金属基板1と金型で成る空間に樹脂を注入して形成していた。
【0007】
更に第3の製造方法は、図4の金属基板1上に直接樹脂を塗布するか、または液状の樹脂の中にディップして封止していた。
【0008】
【発明が解決しようとする課題】
第1の製造方法は、ケース材9を貼り合わせ、樹脂を注入できる空間を用意しなければ成らず、作業性が悪く、価格も高価になり、更にはパッケージサイズが大きくなり、樹脂封止体を介した放熱性が悪いという問題もあった。
【0009】
第2の製造方法は、リード形状により金型を色々用意しなければならず、しかも薄型が難しい問題があった。
【0010】
更に第3の製造方法は、第1、第2の製造方法と比べ、手間もかからず価格的にも下げられるが、金属基板1上に実装された回路素子の高低で、樹脂表面に凸凹が形成され、機種名の印刷性が悪い問題があった。また吸引機構の自動機でプリント基板等に実装する場合、樹脂表面の凹凸で混成集積回路装置が吸引できない問題があった。
【0011】
【課題を解決するための手段】
本発明は、前述の課題に鑑みて成され、第1に、熱硬化前の粉末樹脂が一体化され表面に補強用シートが設けられたペレットを溶融硬化する事で、樹脂封止体とするものであり、混成集積回路基板周囲に、前記補強用シートを支持する支持手段を設ける事で解決するものである。
【0012】
ペレットが溶融すると、樹脂は、混成集積回路基板の全面を覆うように軟化流動する。しかも表面には、補強シートがあるため、平坦性を維持しながら硬化できる。従って製造工程が簡略化でき、コストの低価格化が実現できると共に、印刷性や吸引性も維持できる。更には樹脂封止体の厚みを半分以下にすることもできる。
【0013】
ところが、基板の電子部品、特に高さのある部品が基板の片側に偏って設けられると、補強用シートは傾いて、ラベル印刷ができなくなる。そのため本発明では、前記高さのある部品と同程度の高さを有する支持部材を設けて、偏りを防止し、印刷性を高めたものである。
【0014】
第2に、支持手段として、前記混成集積回路基板に実装された回路素子、金属細線または金属ブロツクを採用することで解決するものである。
【0015】
特に、金属細線は、任意に高さを調整でき、しかも支持点数を所望の数だけ設けられるため、フラット性を更に高めることができる。
【0016】
第3に、混成集積回路基板周囲の前記導電電極に、ループを描いた金属細線を設け、この金属細線を支持手段とする事で解決するものである。
【0017】
ここでは、混成集積回路基板周囲には、電源ラインやグランドライン等の幅の広い配線が設けられてあるので、これを利用することにより、別途配線を設けることなく、ループ状の金属細線を設けることができる。
【0018】
第4に、混成集積回路基板の一方の側辺に、所定の長さで一体形成された導電電極を設け、前記導電電極上に前記金属細線をボンデイング接続する事で解決するものである。
【0019】
前記電源ラインやグランドラインは、混成集積回路基板の側辺に沿って十分長く形成されるため、ループ状の金属細線は、一端と他端をショートすることもなく実現できる。言い方を変えれば、接続部の一端と他端を同電位にでき、また複数の金属細線を設けても全て同電位で実現できる。
【0020】
第5に、導電電極として、電源ライン、グランドラインまたはダミーラインを採用することで解決するものである。
【0021】
第6に、混成集積回路基板は、金属基板より成り、前記金属基板に発生した打ち抜きバリを持つ表面に、前記樹脂封止体を設ける事で解決するものである。
【0022】
電子部品を、混成集積回路基板の打ち抜き面と対向する面に設けて、打ち抜きに生ずる突起部で樹脂の流れを止める事ができる。
【0023】
【発明の実施の形態】
以下に本発明の実施の形態に於いて、その概略を図6を参照しながら説明する。
【0024】
まず例えばプレスにより打ち抜かれた金属の混成集積回路基板1がある。この混成集積回路基板1は、Al、CuやFe等が考えられる。
【0025】
ここで混成集積回路基板として金属基板を用いた理由は、樹脂硬化の際に樹脂の流れを打ち抜きバリ(突起部13)で止めるためである。しかしこの流れが少ないものであれば、金属基板に限らずセラミック基板、プリント基板等も活用できる。
【0026】
この混成集積回路基板1は、紙面に対して下側からプレスで上に打ち抜かれており、混成集積回路基板1底面の周辺にある角部11は、アールを有している。また混成集積回路基板1上面の周辺にある角部12は、実質全周辺に渡り突起部13が設けられ、混成集積回路基板1の側面には、下側にせん断面、上側には破断面が全周に渡り設けられている。
【0027】
この混成集積回路基板1としてAlを採用した場合、その表面は、陽極酸化により酸化物が形成されてもよい。
【0028】
また混成集積回路基板1は、導電性を有するため、この上に設けられる導電路3、4との短絡を考慮し全面に絶縁性樹脂2が被着されている。
【0029】
また導電パターン3、4は、例えばCuより成り、配線、ランド、ボンデイング用のパッド、外部リード用の固着パッド等として設けられ、導電ランドにはベアの半導体ICやトランジスタ等のチップ(半導体素子)が設けられる。また配線間はチップコンデンサ、チップ抵抗および印刷抵抗等の部品が設けられる。これらは、全てを総称して回路素子と呼ぶ。
【0030】
この回路素子14が半田や銀ペースト等を介して電気的に固着され、あるいは印刷抵抗がスクリーン印刷等で形成されている。また中には、前記半導体チップと配線を電気的に接続するため、チップ上の電極とボンディング用パッドとの間には金属細線7が電気的に接続され、外部リード用の固着パッド3には半田を介して外部リード6が電気的に接続されている。この外部リード6は、構造によっては、省略されることもある。
【0031】
またこれらCuのパターンは、絶縁性のフレキシブルシートに貼り合わされ、このフレキシブルシートが混成集積回路基板に貼り合わされても良い。
【0032】
そして、混成集積回路基板1およびこの上に実装された回路素子を封止するために、本発明のポイントとなる封止用の樹脂20が設けられている。
【0033】
続いて製造方法を説明する。まず図4の如き混成集積回路基板1を用意する。
【0034】
次に、図7のようにペレット21を混成集積回路基板の上に配置する。ここでペレット21は、補強用シート22の上に熱硬化前の粉末状の樹脂23が一体化されて形成されたものである。
【0035】
補強用シート22は、樹脂23が熱硬化後もフラット性を保持する必要があり、エポキシ含浸のガラス繊維等が好ましい。また薄いガラス基板等でも良い。
【0036】
この状態で、例えばヒーターの上に載置し、150度程度にして樹脂23を溶融し、その後熱硬化させる。
【0037】
この完成図が、図6である。前述した溶融樹脂は、自分自身の自重や補強シートの自重により沈み込み、同時に補強シートの端部T1、T2から混成集積回路基板1の突起部13まで流れ出て、ダレ部24、25を形成する。
【0038】
右側のダレ部25は、突起部13まで流れるため、混成集積回路基板1から上方に延在される上向きリードを自然に封止し、補強する。但し、ここでは上向きリードで示したが、これに限定されるものではない。
【0039】
また上向きリード部26の上方まで封止するためには、図7に於いて、ペレット21の側面と上向きリード部26とを当接させた方がよい。つまり補強シート22の端部T2に近づくにつれて、リードを覆う厚さが増すためである。
【0040】
以上の説明で完成された混成集積回路装置を図8に示す。補強シート22がフラット性を有するため、図示の如く印刷性が向上し、機種名等を載せることができる。しかもフラット性を有することから、補強シートに自動機の吸引部を当てて、吸引が可能となり、例えばプリント基板等に自動実装が可能となる。
【0041】
以上の説明では、基板1として金属基板で説明したが、セラミック基板、ガラス基板、プリント基板およびフレキシブル基板等でも良い。
【0042】
本混成集積回路装置は、例えば放熱性を要求されるものに最適である。
【0043】
例えば従来型のケース材を用いたパッケージは、ヒートシンクHSの上に半導体チップ5を実装し、金属細線7で接続したものであるが、金属細線7のループ頂部が一番高くなる。例えばヒートシンクHSとして0.5mm厚を採用し、この上に半導体チップを実装すると前記頂部は、金属基板表面から約2mmに成る。
【0044】
そしてこの高さのバラツキによるマージン、ケース材の厚み1mmを考慮すると、基板表面からケース材表面までの厚みは、約5mm〜6mmに成る。これを放熱板が取り付けられていない自立型のパッケージとして採用し、機器に実装されるプリント基板に取り付けた場合、他のパッケージも取り付けてあるので、パッケージ間の空間が狭くなり、空気の流れが抑えられ、放熱性が低下する。従って本装置は、温度上昇を招くばかりか、本装置に実装される半導体チップの電流容量もその分取れなくなってしまう。つまりパッケージは、できる限り薄い必要がある。
【0045】
本発明では、補強シート22を前記金属細線の頂部に当接させる事で薄くしている。この頂部までの高さ2mmに補強用シートの厚み(約200μm)が加わっても、だいたい2mmの厚みとなる。従って、樹脂封止体の厚みは、5〜6mmから約2mmとなる。よって、樹脂封止体の厚みが半分以下となり、前記空気の流れも良くなるばかりか、樹脂が薄いため、樹脂を介した放熱も良好となる。従って、本装置の半導体チップの電流容量をその分大きく取れる。または本装置のプリント基板への実装密度を高めることができる。
【0046】
一方、図7のように、一方には、金属細線7の頂部が設けられ、他方には高さの低い回路素子14等が設けられると、高さに偏りが発生し、前記補強用シートが傾いて、ラベル印刷ができなくなる問題がある。
【0047】
例えばヒートシンクHSは、0.5mm〜3mm程度の厚みのタイプのものが複数ある。例えば3mmを採用すると、この上に固着される半導体チップ5およびワイヤーループの高さも加味して、金属基板混成集積回路基板表面からループ頂まで約5mmの高さとなる。
【0048】
従ってこのヒートシンクを採用した半導体チップ5が混成集積回路基板の一側辺近傍に、また他側辺近傍には何も実装されない状態から、他の回路素子(約2mm等)が実装される場合があり、その高低差は、5mm〜3mmとなりラベル印刷が難しくなる問題が発生する。
【0049】
本発明は、この補強用シート22の傾きを無くすため、支持部材SMを用いることに更なる特徴を有する。例えば図1では、金属細線7とチップコンデンサSM1が支持部材となる。また図2では金属細線7と金属細線SM2である。また図では省略したが、金属ブロツクでも良い。
【0050】
金属細線の線径は、30μm〜500μm程度であり、間には、40、60、80、100、150、200、300,400μm等のものが採用されている。理論上は、頂部までの高さはいくらでも可能である。しかし一方のボンデイング部から他方のボンデイング部までの長さは、30μmφでは、0.8〜3mm程度が限度であり、500μmでは、3mm〜10mm程度が限度である。従って、ループ高さも自ずと決まり、だいたい1〜7mm程度である。
【0051】
前述したように、3mm厚のヒートシンクHSを採用すると、全体の高さとして6mm前後になるため、金属細線を支持部材にできる事がわかる。
【0052】
一方、金属ブロックは、金属細線の様に高さ制限がないため、支持部材として7mm以上のものが実現できる。またチップコンデンサやチップ抵抗等では、部品自体の高さ制限があり、およそ3mm前後である。
【0053】
続いて、図3を参照しながら、金属細線7を支持部材とした応用例を説明する。また符号は、前実施の形態と同じ符号を採用した。上の図は、樹脂封止体を設ける前の混成集積回路基板であり、下の図は、樹脂封止体を設け、上の図の右側辺から見た図である。右側にリード端子3から延在されている配線50は、電源ラインまたはグランドラインであり、この配線50は、上の側辺から下の側辺まで長く延在され、幅も他の配線から比べれば格段に太い。従って、ボンディングがし易く、且つこの領域内に金属細線7Aの一端と他端が複数対でボンデングできる。
【0054】
短い配線では、ボンデイング長に依っては、複数対ボンデイングできず、他の配線をボンディングパッドとして活用すれば、回路と回路を短絡する恐れがあり、実現不可能となるからである。
【0055】
一方、左の配線DLは、ダミー配線である。仮に電源ライン等の幅が広く、長さのある配線が設けられていない場合は、空きスペースを設けるか、空きスペースに、前記ダミー配線DLを設け、ここに金属細線7Bを複数対打てばよい。
【0056】
ここで金属細線7A、7Bは、合計で少なくとも3本設ければ、前記補強用シート22は、平坦性を維持できる。ここでは、更なる安定性を考慮し、4本の金属細線を設けた。
【0057】
ここでは、一方に電源ライン(グランドライン)、他方にダミー配線を設けたが、両側共に電源ライン(グランドライン)、またダミー配線でよい。
【0058】
前述したように、金属細線の径、長さ、ボンデイング操作により、約1〜7mm程度の高さを実現でき、しかもこれらの条件を同じにすれば全ての支持部材の高さを同じにできるため、補強用シートを金属細線に当接させる事で、補強用シートのフラット性が維持できると同時に、パッケージ自体の厚みも薄くすることができる。ここでフラット性とは、500μm程度の差はフラット性があるとする。
【0059】
【発明の効果】
以上の説明から明らかなように、基板の電子部品、特に高さのある部品が基板の片側に偏って設けられると、補強用シートは傾いて、ラベル印刷ができなくなる。本発明は、前記高さのある部品と同程度の高さを有する支持部材を設けることで、偏りを防止でき、印刷性の向上が実現された。
【0060】
特に、金属細線は、任意に高さを調整でき、しかも支持点を所望の数だけ設けられるため、フラット性を更に高めることができた。
【0061】
また混成集積回路基板周囲には、電源ラインやグランドライン等の幅が広く、長さのある配線が設けられてあるので、これを利用することにより、別途配線を設けることなく、ループ状の金属細線を設けることができた。しかも複数対形成でき、補強用シートを傾けることなく配置できた。
【0062】
以上、パッケージの厚みを従来の半分以下にでき、樹脂封止体から外部雰囲気への放熱性が高められ、半導体チップ自身の電流容量を高めることができ、同時に、その表面のラベル印刷性も向上させることができた。
【図面の簡単な説明】
【図1】本発明の実施の形態である混成集積回路装置の断面図である。
【図2】本発明の実施の形態である混成集積回路装置の断面図である。
【図3】本発明の実施の形態である混成集積回路装置の図である。
【図4】混成集積回路装置の製造方法を説明する断面図である。
【図5】混成集積回路装置の製造方法を説明する断面図である。
【図6】本発明の混成集積回路装置を説明する図である。
【図7】図6の溶融前の図である。
【図8】本発明の混成集積回路装置を説明する図である。
【符号の説明】
1 混成集積回路基板
13 突起部
22 補強用シート
23 樹脂
24 外部リード
SM1、SM2 支持部材
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a hybrid integrated circuit device, and more particularly to a hybrid integrated circuit device that does not require a case material and can maintain flatness of a sealed resin surface.
[0002]
[Prior art]
First, there is generally a hybrid integrated circuit device as shown in FIG. 5, which is described in detail, for example, in Japanese Patent Publication No. 61-55247.
[0003]
That is, in the hybrid integrated circuit device, the metal substrate 1, the surface thereof is coated with the insulating material 2, and the conductive patterns 3 and 4 made of Cu adhered thereon and are electrically connected to the conductive patterns 3 and 4. Circuit element 5 such as a semiconductor element, an external lead 6 fixed to a pad 3 which is a part of this conductive pattern via solder, a thin metal wire 7 for electrically connecting the circuit element 5, and And a resin 8 to be used.
[0004]
That is, the back surface of the substrate 1 is exposed in consideration of heat dissipation.
[0005]
There are various manufacturing methods. In the first manufacturing method, first, as shown in FIG. 4, a metal substrate to which circuit elements 3, 4 and external leads 6 are attached is prepared, and a case material 9 shown in FIG. This is realized by applying a resin to a space formed by the case material 9 and the metal substrate 1.
[0006]
In the second manufacturing method, the hybrid integrated circuit substrate shown in FIG. 4 was prepared, set in a mold, and injected with a resin into a space formed by the metal substrate 1 and the mold.
[0007]
Further, in the third manufacturing method, a resin is applied directly on the metal substrate 1 of FIG. 4 or is sealed by dipping in a liquid resin.
[0008]
[Problems to be solved by the invention]
In the first manufacturing method, a space for adhering the case material 9 and injecting the resin must be prepared, so that the workability is poor, the price is expensive, the package size is increased, and the resin sealing body is increased. There is also a problem that the heat radiation through the device is poor.
[0009]
In the second manufacturing method, various molds have to be prepared depending on the lead shape, and there is a problem that it is difficult to make the mold thin.
[0010]
Further, the third manufacturing method can reduce the time and cost as compared with the first and second manufacturing methods, but the height of the circuit element mounted on the metal substrate 1 causes the resin surface to be uneven. Was formed, and the printability of the model name was poor. Further, when mounting on a printed circuit board or the like by an automatic suction mechanism, there is a problem that the hybrid integrated circuit device cannot be suctioned due to irregularities on the resin surface.
[0011]
[Means for Solving the Problems]
The present invention has been made in view of the above-mentioned problems, and firstly, a resin sealing body is formed by melting and curing a pellet provided with a reinforcing sheet on a surface in which a powder resin before heat curing is integrated. The problem can be solved by providing support means for supporting the reinforcing sheet around the hybrid integrated circuit board.
[0012]
When the pellets melt, the resin softens and flows so as to cover the entire surface of the hybrid integrated circuit board. In addition, since the surface has the reinforcing sheet, it can be cured while maintaining flatness. Therefore, the manufacturing process can be simplified, the cost can be reduced, and printability and suction can be maintained. Further, the thickness of the resin sealing body can be reduced to half or less.
[0013]
However, if the electronic components of the substrate, especially the tall components, are provided on one side of the substrate, the reinforcing sheet is inclined and label printing cannot be performed. For this reason, in the present invention, a support member having the same height as that of the tall component is provided to prevent bias and improve printability.
[0014]
Second, the problem can be solved by employing a circuit element, a thin metal wire or a metal block mounted on the hybrid integrated circuit board as the support means.
[0015]
In particular, since the height of the thin metal wire can be adjusted arbitrarily and the desired number of support points is provided, the flatness can be further improved.
[0016]
Third, the problem is solved by providing a thin metal wire with a loop on the conductive electrode around the hybrid integrated circuit board and using the thin metal wire as a support means.
[0017]
Here, a wide wiring such as a power supply line and a ground line is provided around the hybrid integrated circuit board, and by using this, a loop-shaped thin metal wire is provided without providing a separate wiring. be able to.
[0018]
Fourth, the problem is solved by providing a conductive electrode integrally formed with a predetermined length on one side of the hybrid integrated circuit board, and bonding and connecting the thin metal wire on the conductive electrode.
[0019]
Since the power supply line and the ground line are formed sufficiently long along the side of the hybrid integrated circuit board, the loop-shaped thin metal wire can be realized without short-circuiting one end and the other end. In other words, one end and the other end of the connection portion can be set to the same potential, and even if a plurality of thin metal wires are provided, they can be realized at the same potential.
[0020]
Fifth, the problem is solved by employing a power supply line, a ground line, or a dummy line as the conductive electrode.
[0021]
Sixth, the hybrid integrated circuit substrate is made of a metal substrate, and is solved by providing the resin sealing body on a surface having punched burrs generated on the metal substrate.
[0022]
The electronic component can be provided on the surface of the hybrid integrated circuit board opposite to the punched surface, and the flow of the resin can be stopped by the protrusions generated by the punching.
[0023]
BEST MODE FOR CARRYING OUT THE INVENTION
The outline of the embodiment of the present invention will be described below with reference to FIG.
[0024]
First, there is a hybrid integrated circuit board 1 made of a metal stamped by, for example, a press. The hybrid integrated circuit board 1 may be made of Al, Cu, Fe, or the like.
[0025]
The reason why the metal substrate is used as the hybrid integrated circuit board is that the flow of the resin is punched out at the time of curing the resin and stopped by burrs (projections 13). However, as long as the flow is small, not only a metal substrate but also a ceramic substrate, a printed substrate, or the like can be used.
[0026]
The hybrid integrated circuit board 1 is punched upward by a press from below with respect to the paper surface, and a corner 11 around the bottom surface of the hybrid integrated circuit board 1 has a radius. Further, the corners 12 around the upper surface of the hybrid integrated circuit board 1 are provided with projections 13 over substantially the entire periphery, and the side faces of the hybrid integrated circuit board 1 have a shear surface on the lower side and a fracture surface on the upper side. It is provided all around.
[0027]
When Al is used as the hybrid integrated circuit substrate 1, an oxide may be formed on the surface by anodic oxidation.
[0028]
Further, since the hybrid integrated circuit board 1 has conductivity, an insulating resin 2 is applied to the entire surface in consideration of a short circuit with the conductive paths 3 and 4 provided thereon.
[0029]
The conductive patterns 3 and 4 are made of, for example, Cu, and are provided as wiring, lands, bonding pads, fixing pads for external leads, and the like. Bare semiconductor ICs and chips (semiconductor elements) such as transistors on the conductive lands. Is provided. Parts such as a chip capacitor, a chip resistor, and a printed resistor are provided between the wirings. These are all collectively called circuit elements.
[0030]
The circuit element 14 is electrically fixed via solder, silver paste, or the like, or a print resistor is formed by screen printing or the like. In order to electrically connect the semiconductor chip and the wiring, a thin metal wire 7 is electrically connected between an electrode on the chip and a bonding pad, and a fixing pad 3 for an external lead is provided inside. External leads 6 are electrically connected via solder. The external lead 6 may be omitted depending on the structure.
[0031]
Further, these Cu patterns may be bonded to an insulating flexible sheet, and the flexible sheet may be bonded to a hybrid integrated circuit board.
[0032]
In order to seal the hybrid integrated circuit board 1 and the circuit elements mounted thereon, a sealing resin 20, which is a point of the present invention, is provided.
[0033]
Subsequently, the manufacturing method will be described. First, a hybrid integrated circuit board 1 as shown in FIG. 4 is prepared.
[0034]
Next, as shown in FIG. 7, the pellet 21 is arranged on the hybrid integrated circuit board. Here, the pellets 21 are formed by integrating a powdery resin 23 before thermosetting on a reinforcing sheet 22.
[0035]
The reinforcing sheet 22 needs to maintain flatness even after the resin 23 is thermally cured, and is preferably made of epoxy impregnated glass fiber or the like. Further, a thin glass substrate or the like may be used.
[0036]
In this state, the resin 23 is placed on a heater, for example, is heated to about 150 degrees to melt the resin 23, and then thermally cured.
[0037]
FIG. 6 shows the completed drawing. The above-described molten resin sinks due to its own weight or the weight of the reinforcing sheet, and at the same time, flows out from the ends T1 and T2 of the reinforcing sheet to the protruding portion 13 of the hybrid integrated circuit board 1 to form sagging portions 24 and 25. .
[0038]
The right-side sagging portion 25 flows to the protruding portion 13, so that the upward lead extending upward from the hybrid integrated circuit board 1 is naturally sealed and reinforced. Here, the upward lead is shown here, but the present invention is not limited to this.
[0039]
Further, in order to seal up to the upper part of the upward lead portion 26, it is better to make the side surface of the pellet 21 and the upward lead portion 26 contact each other in FIG. In other words, this is because the thickness covering the lead increases as approaching the end T2 of the reinforcing sheet 22.
[0040]
FIG. 8 shows the hybrid integrated circuit device completed as described above. Since the reinforcing sheet 22 has flatness, the printability is improved as shown in the figure, and a model name or the like can be placed. Moreover, since the flat sheet has flatness, the suction section of the automatic machine can be applied to the reinforcing sheet and suction can be performed. For example, the reinforcing sheet can be automatically mounted on a printed circuit board or the like.
[0041]
In the above description, the metal substrate is used as the substrate 1. However, a ceramic substrate, a glass substrate, a printed substrate, a flexible substrate, or the like may be used.
[0042]
This hybrid integrated circuit device is most suitable for, for example, devices requiring heat dissipation.
[0043]
For example, in a package using a conventional case material, a semiconductor chip 5 is mounted on a heat sink HS and connected by a thin metal wire 7. The top of the loop of the thin metal wire 7 is the highest. For example, when the heat sink HS is 0.5 mm thick and a semiconductor chip is mounted thereon, the top is about 2 mm from the surface of the metal substrate.
[0044]
Considering the margin due to the variation in height and the thickness of the case material of 1 mm, the thickness from the substrate surface to the case material surface is about 5 mm to 6 mm. If this is adopted as a self-supporting package without a heat sink, and mounted on a printed circuit board mounted on equipment, the space between the packages will be narrower because other packages are also mounted, and the air flow will be reduced. It is suppressed, and the heat dissipation is reduced. Therefore, in this device, not only the temperature rises, but also the current capacity of the semiconductor chip mounted in this device cannot be obtained. That is, the package must be as thin as possible.
[0045]
In the present invention, the reinforcing sheet 22 is made thin by contacting the top of the fine metal wire. Even if the thickness of the reinforcing sheet (approximately 200 μm) is added to the height of 2 mm up to the top, the thickness becomes approximately 2 mm. Therefore, the thickness of the resin sealing body is from 5 to 6 mm to about 2 mm. Accordingly, the thickness of the resin sealing body is reduced to half or less, and not only the flow of the air is improved, but also the heat dissipation via the resin is improved because the resin is thin. Therefore, the current capacity of the semiconductor chip of this device can be increased accordingly. Alternatively, the mounting density of the device on a printed circuit board can be increased.
[0046]
On the other hand, as shown in FIG. 7, when one side is provided with the top of the thin metal wire 7 and the other side is provided with a low-height circuit element 14 or the like, a bias occurs in the height and the reinforcing sheet is not provided. There is a problem that label printing cannot be performed due to the inclination.
[0047]
For example, there are a plurality of heat sinks HS having a thickness of about 0.5 mm to 3 mm. For example, if 3 mm is adopted, the height is about 5 mm from the surface of the metal substrate hybrid integrated circuit board to the top of the loop, taking into account the height of the semiconductor chip 5 and the wire loop fixed thereon.
[0048]
Therefore, there is a case where the semiconductor chip 5 employing this heat sink is mounted near one side of the hybrid integrated circuit board and nothing is mounted near the other side, and another circuit element (about 2 mm or the like) is mounted. There is a height difference of 5 mm to 3 mm, which causes a problem that label printing becomes difficult.
[0049]
The present invention has a further feature in using the support member SM in order to eliminate the inclination of the reinforcing sheet 22. For example, in FIG. 1, the thin metal wire 7 and the chip capacitor SM1 serve as support members. Further, in FIG. 2, the thin metal wire 7 and the thin metal wire SM2 are shown. Although not shown in the figure, a metal block may be used.
[0050]
The wire diameter of the thin metal wire is about 30 μm to 500 μm, and a wire having a diameter of 40, 60, 80, 100, 150, 200, 300, 400 μm, or the like is employed therebetween. In theory, any height up to the top is possible. However, the length from one bonding portion to the other bonding portion is limited to about 0.8 to 3 mm at 30 μmφ, and is limited to about 3 mm to 10 mm at 500 μm. Accordingly, the loop height is naturally determined, and is about 1 to 7 mm.
[0051]
As described above, when the heat sink HS having a thickness of 3 mm is employed, the overall height is about 6 mm, and thus it can be seen that a thin metal wire can be used as the support member.
[0052]
On the other hand, since the height of the metal block is not limited as in the case of a thin metal wire, a support member of 7 mm or more can be realized. In the case of a chip capacitor or a chip resistor, the height of the component itself is limited, and is about 3 mm.
[0053]
Next, an application example in which the thin metal wire 7 is used as a support member will be described with reference to FIG. Further, the same reference numerals as those in the previous embodiment are used. The upper drawing is a hybrid integrated circuit board before the resin sealing body is provided, and the lower drawing is a drawing in which the resin sealing body is provided and viewed from the right side of the upper drawing. The wiring 50 extending from the lead terminal 3 on the right side is a power supply line or a ground line. The wiring 50 extends from the upper side to the lower side, and its width is compared with other wirings. It is much thicker. Therefore, bonding is easy, and one end and the other end of the fine metal wire 7A can be bonded in plural pairs in this region.
[0054]
This is because if a short wiring is used, a plurality of pairs cannot be bonded depending on the bonding length, and if another wiring is used as a bonding pad, there is a risk of short-circuiting between circuits, which is not feasible.
[0055]
On the other hand, the left wiring DL is a dummy wiring. If a wide power supply line or the like and a long wiring is not provided, an empty space is provided, or the dummy wiring DL is provided in the empty space, and a plurality of thin metal wires 7B are punched here. Good.
[0056]
Here, if at least three metal thin wires 7A and 7B are provided in total, the reinforcing sheet 22 can maintain flatness. Here, four thin metal wires are provided in consideration of further stability.
[0057]
Here, a power supply line (ground line) is provided on one side and a dummy wiring is provided on the other side, but a power supply line (ground line) or a dummy wiring may be provided on both sides.
[0058]
As described above, the height of about 1 to 7 mm can be realized by the diameter, length, and bonding operation of the thin metal wire, and the height of all the support members can be the same if these conditions are the same. By contacting the reinforcing sheet with the thin metal wire, the flatness of the reinforcing sheet can be maintained and the thickness of the package itself can be reduced. Here, the flatness means that a difference of about 500 μm has flatness.
[0059]
【The invention's effect】
As is apparent from the above description, when electronic components of the substrate, particularly components having a height, are provided on one side of the substrate, the reinforcing sheet is inclined and label printing cannot be performed. According to the present invention, by providing the supporting member having the same height as that of the tall component, the bias can be prevented and the printability is improved.
[0060]
In particular, since the height of the thin metal wire can be arbitrarily adjusted and the desired number of support points is provided, the flatness can be further improved.
[0061]
A wide and long wiring such as a power supply line and a ground line is provided around the hybrid integrated circuit board. By using this, it is possible to provide a loop-shaped metal without providing a separate wiring. A thin line could be provided. Moreover, a plurality of pairs can be formed, and the reinforcing sheets can be arranged without tilting.
[0062]
As described above, the thickness of the package can be reduced to less than half of the conventional thickness, the heat dissipation from the resin sealing body to the outside atmosphere can be increased, the current capacity of the semiconductor chip itself can be increased, and at the same time, the label printability on the surface is also improved I was able to.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a hybrid integrated circuit device according to an embodiment of the present invention.
FIG. 2 is a sectional view of a hybrid integrated circuit device according to an embodiment of the present invention.
FIG. 3 is a diagram of a hybrid integrated circuit device according to an embodiment of the present invention.
FIG. 4 is a cross-sectional view illustrating a method of manufacturing a hybrid integrated circuit device.
FIG. 5 is a cross-sectional view illustrating a method of manufacturing a hybrid integrated circuit device.
FIG. 6 is a diagram illustrating a hybrid integrated circuit device according to the present invention.
FIG. 7 is a view of FIG. 6 before melting.
FIG. 8 is a diagram illustrating a hybrid integrated circuit device of the present invention.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 hybrid integrated circuit board 13 protrusion 22 reinforcing sheet 23 resin 24 external leads SM1, SM2 support member

Claims (6)

金属基板より成り、前記金属基板に発生した打ち抜きバリを持つ表面に、絶縁処理された導電電極がパターニングされて前記表面に形成された混成集積回路基板と、前記導電電極と電気的に接続された回路素子と、熱硬化前の粉末樹脂が一体化され表面に補強用シートが設けられたペレットを溶融硬化することで、前記混成集積回路基板の実質全域を封止した樹脂封止体とを有する混成集積回路装置であり、
前記混成集積回路基板上の周囲には、前記補強用シートを支持する支持手段が前記混成集積回路基板上に高さを揃えて設けられ、前記打ち抜きバリにより前記樹脂の流れが止められていることを特徴とする混成集積回路装置。
Made of a metal substrate, the surface having a punching burr generated in the metal substrate, a hybrid integrated circuit substrate formed on the surface insulating treated conductive electrode is patterned, which is connected to the conductive electrode and electrically A circuit element, and a resin sealing body that seals substantially the entire area of the hybrid integrated circuit board by melt-hardening a pellet in which a powder resin before thermosetting is integrated and a reinforcing sheet is provided on the surface, and is melt-hardened. A hybrid integrated circuit device,
Around the hybrid integrated circuit board, supporting means for supporting the reinforcing sheet are provided on the hybrid integrated circuit board at a uniform height, and the flow of the resin is stopped by the punched burrs. A hybrid integrated circuit device characterized by the above-mentioned.
前記支持手段は、前記混成集積回路基板に実装された電子部品、金属細線または金属ブロックである請求項1に記載の混成集積回路装置。2. The hybrid integrated circuit device according to claim 1, wherein said support means is an electronic component, a thin metal wire or a metal block mounted on said hybrid integrated circuit board. 導電電極がパターニングされてその表面に形成された混成集積回路基板と、前記導電電極と電気的に接続された回路素子と、熱硬化前の粉末樹脂が一体化され表面に補強用シートが設けられたペレットを溶融硬化することで、前記混成集積回路基板の実質全域を封止した樹脂封止体とを有する混成集積回路装置であり、
前記混成集積回路基板周囲の前記導電電極には、金属細線がループを描いて設けられ、前記金属細線が前記補強用シートを支持する支持手段となることを特徴とする混成集積回路装置。
A conductive integrated electrode is patterned and a hybrid integrated circuit board formed on the surface thereof, a circuit element electrically connected to the conductive electrode, and a powder resin before thermosetting are integrated and a reinforcing sheet is provided on the surface. By melting and hardening the pellets, a resin integrated body sealing substantially the entire area of the hybrid integrated circuit board is a hybrid integrated circuit device,
A hybrid integrated circuit device, wherein a thin metal wire is provided in a loop on the conductive electrode around the hybrid integrated circuit board, and the thin metal wire serves as support means for supporting the reinforcing sheet.
前記混成集積回路基板の一側辺には、所定の長さで一体形成された導電電極が設けられ、前記導電電極上に前記金属細線がボンディング接続される請求項3に記載の混成集積回路装置。4. The hybrid integrated circuit device according to claim 3, wherein a conductive electrode integrally formed with a predetermined length is provided on one side of the hybrid integrated circuit board, and the thin metal wire is bonded to the conductive electrode. . 前記導電電極は、電源ライン、グランドラインまたはダミーラインである請求項4に記載の混成集積回路装置。The hybrid integrated circuit device according to claim 4, wherein the conductive electrode is a power line, a ground line, or a dummy line. 前記混成集積回路基板は、金属基板より成り、前記金属基板に発生した打ち抜きバリを持つ表面に、前記バリで流れが止められる前記樹脂封止体が設けられる請求項3から請求項5のいずれかに記載の混成集積回路装置。The hybrid integrated circuit board is made of a metal substrate, the surface having a punching burr generated in the metal substrate, any of the preceding claims 3, wherein the resin sealing body flow is stopped by the burrs are provided 3. The hybrid integrated circuit device according to claim 1.
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