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JP3592018B2 - Polyimide adhesive sheet and process film for polyimide - Google Patents

Polyimide adhesive sheet and process film for polyimide Download PDF

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Publication number
JP3592018B2
JP3592018B2 JP00860097A JP860097A JP3592018B2 JP 3592018 B2 JP3592018 B2 JP 3592018B2 JP 00860097 A JP00860097 A JP 00860097A JP 860097 A JP860097 A JP 860097A JP 3592018 B2 JP3592018 B2 JP 3592018B2
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Japan
Prior art keywords
polyimide
film
adhesive sheet
resin
process film
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Expired - Fee Related
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JP00860097A
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Japanese (ja)
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JPH09263734A (en
Inventor
原 則 人 梅
海 正 純 雨
林 真 盛 小
部 和 義 江
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Lintec Corp
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Lintec Corp
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/838—Bonding techniques
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)

Description

【０００１】
【発明の技術分野】
本発明は、ポリイミド接着シートならびにポリイミド用工程フィルムに関し、特に複数の半導体集積回路が形成されたシリコンウェハをダイシングし、個々の半導体集積回路、即ちＩＣチップ（チップまたはダイとも言う）とし、さらにそれらＩＣチップをパッケージ用リードフレーム等に搭載する工程において使用されるポリイミド接着シートならびにポリイミド用工程フィルムに関する。
【０００２】
【発明の技術的背景】
シリコン、ガリウムヒ素などの半導体ウェハは大径の状態で製造され、このウェハはＩＣチップに切断分離（ダイシング）された後に次の工程であるパッケージ用リードフレームにＩＣチップを載置するダイボンディング工程（マウント工程とも言う）に移されている。
【０００３】
ダイボンディング工程において、ピックアップされたＩＣチップは、リードフレームのＩＣチップ搭載部（マウント部）に塗布されたエポキシ系接着剤、ポリイミド系接着剤、銀ペーストなどの粘液状で供給されるＩＣチップ接着用接着剤を介して固定され、その後ワイヤーボンディング工程、樹脂モールド工程を経て半導体装置が製造されている。しかしながら、このような液状接着剤の塗布では、ＩＣチップが非常に小さな場合には、適量の接着剤を均一に塗布することが困難であり、ＩＣチップから接着剤がはみ出したり、あるいはＩＣチップが大きい場合には、接着剤が不足するなど、充分な接着力を有するように接着を行うことができないなどという問題点があった。
【０００４】
近年、半導体チップの集積度は増加する傾向にあり、これに伴い、チップサイズは大面積化し、また配線は微細化、多層化しつつある。その一方で、プリント配線板への実装を高密度に行えるように、チップを収納するパッケージは小型化、薄形化する傾向にある。これら大面積の薄形パッケージは、従来のものと比較して、耐熱衝撃性や耐湿性に劣り、表面実装工程においてパッケージクラックを発生しやすいという問題があった。
【０００５】
一方、リードフレームへのＩＣチップ接着用に耐熱性の優れたポリイミド樹脂を用いたフィルム接着剤が提案され、半導体装置の耐久性を向上することが報告されている。またこのようなＩＣチップ接着用の接着剤を基材フィルムに剥離可能に積層したダイシング・ダイボンディング兼用のダイシングシートが提案されている。
【０００６】
しかし、ポリイミド樹脂を用いたフィルム接着剤は、上記のようなダイシング・ダイボンディング工程に適用可能なものは存在せず、チップの保持性、転写性に不充分であった。
【０００７】
【発明の目的】
本発明は、上記のような従来技術に鑑みてなされたものであって、ダイシング・ダイボンディングに好適で、パッケージクラックの発生しにくい半導体装置を製造しうるポリイミド接着シートならびにポリイミド用工程フィルムを提供することにある。
【０００８】
【発明の概要】
本発明に係るポリイミド接着シートは、表面張力が４０ｄｙｎ／ｃｍ未満のポリイミド用工程フィルムと、該工程フィルム表面上に形成されたポリイミド系接着剤層とからなることを特徴としている。ここで、上記ポリイミド用工程フィルムの融点が２６０℃以上であることが好ましく、特にポリエチレンナフタレート樹脂からなることが好ましい。また、上記ポリイミド用工程フィルムの表面は、アルキッド系剥離剤にて剥離処理されてなることが好ましい。
【０００９】
本発明に係るポリイミド用工程フィルムは、ポリイミド系接着剤を成膜、支持するために用いられ、その表面張力が４０ｄｙｎ／ｃｍ未満であることを特徴としている。ここで、上記ポリイミド用工程フィルムの融点が２６０℃以上であることが好ましく、特にポリエチレンナフタレート樹脂からなることが好ましい。また、上記ポリイミド用工程フィルムの表面は、アルキッド系剥離剤にて剥離処理されてなることが好ましい。
【００１０】
【発明の具体的説明】
以下、本発明に係るポリイミド接着シートおよびポリイミド用工程フィルムについて、具体的に説明する。
【００１１】
本発明に係るポリイミド接着シート１は、図１に示すように、ポリイミド用工程フィルム２と、前記ポリイミド用工程フィルム２上に形成されたポリイミド系接着剤層３とからなる。なお、本発明のポリイミド接着シート１の使用前に、ポリイミド系接着剤層３を保護するために、シート１の上面に剥離フィルムを積層しておいてもよい。
【００１２】
本発明に係るポリイミド接着シート１の形状は、テープ状、ラベル状などあらゆる形状をとりうる。
ポリイミド接着シート１を構成するポリイミド用工程フィルム２の表面張力は、４０ｄｙｎ／ｃｍ未満、好ましくは３０〜４０ｄｙｎ／ｃｍであり、このような表面張力を有する表面に後述するポリイミド系接着剤層３が形成されてなる。表面張力が３０〜４０ｄｙｎ／ｃｍの範囲では、ポリイミド系接着剤層３のポリイミド用工程フィルム２からの転写性と、ダイシングに用いた際のチップ保持性に特に優れる。また、ポリイミド用工程フィルム２は耐熱性の樹脂からなることが好ましく、前記樹脂の融点は好ましくは２６０℃以上、さらに好ましくは２６０〜３００℃、特に好ましくは２６０℃〜２８０℃である。
【００１３】
このようなポリイミド用工程フィルム２としては、具体的には、ポリエチレンナフタレートフィルム、ポリイミドフィルム、ポリエーテルイミドフィルム、ポリアラミドフィルム、ポリエーテルケトンフィルム、ポリエーテル・エーテルケトンフィルム、ポリフェニレンサルファイドフィルム、ポリ（４−メチルペンテン−１）フィルム等が用いられる。また、ポリイミド用工程フィルム２はこれらフィルムの積層体であってもよい。さらに、上記フィルムと、他のフィルムとの積層体であってもよい。これらの中でも特に好ましくはポリエチレンナフタレートフィルムが用いられる。
【００１４】
ポリイミド用工程フィルム２の膜厚は、その材質にもよるが、通常は１０〜３００μｍ程度であり、好ましくは１６〜１００μｍ程度である。
また、前記の表面張力値を付与するためには、ポリイミド用工程フィルム２の片面に剥離処理を施しておき、この剥離処理面に、ポリイミド系接着剤層３を設けることが好ましい。
【００１５】
このような剥離処理に用いられる剥離剤としては、アルキッド系、シリコーン系、フッ素系、不飽和ポリエステル系、ポリオレフィン系、ワックス系等が用いられるが、特にアルキッド系、シリコーン系、フッ素系の剥離剤が耐熱性を有するので好ましい。特にポリイミド用工程フィルムの基材への密着性が高く、表面張力が調製しやすいため、アルキッド樹脂が好ましい。
【００１６】
上記の剥離剤を用いてポリイミド用工程フィルム２の表面を剥離処理するためには、剥離剤をそのまま無溶剤で、または溶剤希釈やエマルション化して、グラビアコーター、メイヤーバーコーター、エアナイフコーター、ロールコーター等により塗布して、常温または加熱あるいは電子線硬化させたり、ウェットラミネーションやドライラミネーション、熱溶融ラミネーション、溶融押出ラミネーション、共押出加工などで積層体を形成すればよい。
【００１７】
ポリイミド接着シート１を構成するポリイミド系接着剤層３に用いられるポリイミド系樹脂は、ポリイミド樹脂自体と、ポリイミド樹脂の前駆体とを包含する。ポリイミド樹脂は、側鎖または主鎖にイミド結合を有する。またポリイミド樹脂前駆体とは、最終的な接着工程で、上記のポリイミド樹脂を与えるものをいう。このようなポリイミド系樹脂としては、具体的には、ポリイミド樹脂、ポリイソイミド樹脂、マレイミド樹脂、ビスマレイミド樹脂、ポリアミドイミド樹脂、ポリエーテルイミド樹脂、ポリ−イミド・イソインドロキナゾリンジオンイミド樹脂等が挙げられ、これらの樹脂単独もしくは２つ以上混合させて使用することができる。これらの中でも特にポリイミド樹脂が好ましい。
【００１８】
ポリイミド系樹脂の分子量は、好ましくは１０，０００〜１，０００，０００、特に好ましくは５０，０００〜１００，０００程度である。
上記のようなポリイミド系樹脂には、反応性官能基を有しない熱可塑性ポリイミド系樹脂と加熱によりイミド化反応する熱硬化性のポリイミド樹脂が存在するが、そのいずれであってもよい。熱硬化性ポリイミド樹脂を使用する場合は、半硬化物（いわゆるＢステージ）の樹脂を用いて仮接着した後、加熱硬化して接着剤層をポリイミド化し、接着工程を完了させる。
【００１９】
また、ポリイミド系樹脂に、他のポリマーやオリゴマー、低分子化合物を添加したポリイミド系接着剤を用いてもよい。たとえば、エポキシ樹脂、アミド樹脂、ウレタン樹脂、アミド酸樹脂、アクリル樹脂、シリコーン樹脂などの各種ポリマーやオリゴマー；トリエタノールアミンやα，ω−（ビス３−アミノプロピル）ポリエチレングリコールエーテルなどの含窒素有機化合物などが添加剤として挙げることができる。
【００２０】
また、ポリイミド系接着剤組成物を調製する際に、上記各成分を均一に溶解・分散させることが可能な溶媒を用いることもできる。このような溶媒としては、上記材料を均一に溶解・分散できるものであれば特に限定はなく、たとえばジメチルホルムアミド、ジメチルアセトアミド、Ｎ−メチルピロリドン、ジメチルスルホキシド、ジエチレングリコールジメチルエーテル、トルエン、ベンゼン、キシレン、メチルエチルケトン、テトラヒドロフラン、エチルセロソルブ、ジオキサン、シクロペンタノン、シクロヘキサノン等を挙げることができ、１種類のみを用いてもよいし、２種類以上を混合して用いてもよい。
【００２１】
ポリイミド系接着剤層３の膜厚は、好ましくは１〜５０μｍ程度であり、特に好ましくは５〜２０μｍ程度である。
本発明のポリイミド接着シート１には、１００〜３００℃、好ましくは１２０〜１５０℃程度の加熱、および１〜１０ｋｇ／ｃｍ２ 好ましくは１〜４ｋｇ／ｃｍ２ 程度の加圧条件下でウェハを熱圧着可能であり、熱圧着により、ウェハに対し好ましくは１００ｇ／２５ｍｍ以上、特に好ましくは４００ｇ／２５ｍｍ以上の接着力を有するようになる。
【００２２】
次に本発明に係るポリイミド接着シート１の主な使用方法について説明する。まず、図２に示すように、別途用意した粘着シートや両面粘着シートなどの接着手段４により、ポリイミド接着シート１をリングフレーム５に固定し、シリコンウェハ６の一面をポリイミド系接着剤層３上に熱圧着し固定する。熱圧着の条件は上記のとおりである。なお、ウェハ６をポリイミド系接着剤層３上に熱圧着する工程は、ポリイミド接着シート１をリングフレーム５に固定する前に行ってもよく、固定後に行ってもよい。次いで、ダイシングソーなどの切断手段を用いて、上記のシリコンウェハ６を切断しＩＣチップを得る（図３参照）。この際の切断深さは、シリコンウェハ６とポリイミド系接着剤層３との厚みおよびダイシングソーの磨耗分を加味した深さにする。次いでＩＣチップのピックアップを行うと、切断されたポリイミド系接着剤層をＩＣチップ裏面に固着残存させてポリイミド用工程フィルム２から剥離することができる。この際のＩＣチップとポリイミド系接着剤層との接着力が、ポリイミド系接着剤層とポリイミド用工程フィルムとの接着力よりも強く、ポリイミド系接着剤層をＩＣチップの片面に固着残存させてポリイミド用工程フィルムから剥離することができる。
【００２３】
このようにしてポリイミド系接着剤層が固着されているＩＣチップをリードフレームに載置する。リードフレームはＩＣチップを載置する前に加熱するか載置直後に加熱される。加熱温度は、通常は１００〜３００℃、好ましくは１５０〜２５０℃であり、加熱時間は、通常は１秒〜６０分、好ましくは１秒〜１分である。このような加熱により、ポリイミド系樹脂を溶融または硬化させ、ＩＣチップとリードフレームとを強固に接着することができる。
【００２４】
なお、本発明のポリイミド接着シートは、上記のような使用方法の他、半導体化合物、ガラス、セラミックス、金属などの接着に使用することもできる。
本発明のポリイミド接着シートによれば、ウェハ回路面を汚染することなく容易にウェハ裏面に接着剤層を形成することができ、しかも、比較的低温で加熱圧着することが可能であるため、ウェハが受ける熱的、機械的ダメージを回避することができる等の技術的利点がある。なお、本発明のポリイミド接着シートは、上記の他にも、たとえばダイパッドの接着剤膜、封止樹脂とチップ裏面の密着向上膜、パッシベーション膜、層間絶縁膜、α線遮蔽膜、液晶配向膜、フォトレジスト膜、プリント基板保護膜、パターン形成膜、Ｘ線露光マスキング膜等の成膜に使用することができる。
【００２５】
さらに、本発明は、前記ポリイミド接着シートに特に好適に用いられるポリイミド用加工フィルムを提供することも目的としている。すなわち、本発明に係るポリイミド用工程フィルムは、ポリイミド系接着剤を成膜、支持するために用いられ、その表面張力が４０ｄｙｎ／ｃｍ未満であることを特徴としている。ここで、上記ポリイミド用工程フィルムの融点が２６０℃以上であることが好ましく、特にポリエチレンナフタレート樹脂からなることが好ましい。また、上記ポリイミド用工程フィルムの表面は、アルキッド系剥離剤にて剥離処理されてなることが好ましい。本発明のポリイミド用工程フィルムによれば、工程用フィルムの耐熱性が高いために、高沸点溶媒を用いているポリイミド系接着剤溶液の塗布、高温乾燥工程に対応することができ、容易にポリイミド系接着剤を成膜することができる等の技術的利点がある。なお、本発明のポリイミド加工フィルムは、上記の他にも、たとえば高沸点溶媒を使用しているその他の樹脂の成膜等の用途に使用することができる。
【００２６】
【発明の効果】
本発明によれば、ダイシングの際にはダイシングテープとして使用することができ、しかも接着剤としてウェハ裏面にマウントすることができ、リードフレーム等との接着力に優れ、ダイボンド後に耐熱性、耐老化性等に優れたポリイミド接着シートを提供することができる。さらに本発明によれば、ポリイミド系接着剤の使用にあたって原料ロスを低減でき、しかも厚みが均一な接着剤層を形成することができる。またポリイミド系接着剤層をウェハに転写するに際して、ウェハが受ける熱的、機械的ダメージを回避することができる。また、本発明のポリイミド接着シートを用いることにより、パッケージクラックを発生しにくい半導体装置を製造することができる。
【００２７】
【実施例】
以下本発明を実施例により説明するが、本発明はこれら実施例に限定されるものではない。
【００２８】
なお、以下の実施例および比較例において、「パッケージクラック発生率」、「チップ飛散数」および「チップ剥離力」は次のようにして評価した。
パッケージクラック発生率
ダイシング後、ポリイミド接着シートからチップを取り出し、リードフレームにマウントし、ボンディング後、所定のモールド樹脂（ビフェニル型エポキシ樹脂）で高圧封止する。１７５℃、６時間をを要して、その樹脂を硬化させ、パッケージとして完成させた後、８５℃、８５％ＲＨの環境下に１６８時間放置する。その後、２１５℃のＶＰＳ（Ｖａｐｏｒ Ｐｈａｓｅ Ｓｏｌｄｅｒｉｎｇ）（所要時間：１分間）を３回行い、走査型超音波探傷機ＳＡＴ（Ｓｃａｎｎｉｎｇ Ａｃｏｕｓｔｉｃ Ｔｏｍｏｇｒａｐｈｙ）で封止樹脂のクラックの有無を検査する。投入検体数に対するクラック発生数の比率をパッケージクラック発生率とする。
チップ飛散数
各チップサイズにダイシングした後、飛散チップ数（周縁の不定形部分を含む）をカウントした。
チップ剥離力
ポリイミド接着シートに接着したウェハを各チップサイズにダイシングした後、該シート側を厚さ１０ｍｍのガラス板に両面粘着シートで固定した。ダイシングされたチップの表面に鍵形状の垂直懸架用治具を瞬間接着剤で固定し、インストロン４２０４型万能材料試験機（インストロン（株）製）のクロスヘッド部にループ状のナイロンで固定し、これを前記治具の鍵状部に掛けて、クロスヘッド速度５００ｍｍ／分で垂直剥離したときの最大値をチップ剥離力とした。
【００２９】
【実施例１】
アルキッド系剥離剤により剥離処理したポリエチレンナフタレートフィルム（厚さ２５μｍ：融点２７２℃、表面張力３４ｄｙｎ／ｃｍ ）をポリイミド用工程フィ ルムとし、この処理面に熱可塑性ポリイミド系接着剤のシクロヘキサノン溶液を塗布（固形分塗布厚１０μｍ）し、乾燥（１４０℃、３分）してポリイミド接着シートを作成した。
【００３０】
次いでポリイミド接着シートを直径１２０ｍｍに打抜加工し、４インチウェハを熱圧着（１４０℃、３０秒）させ、別途用意した粘着シート（軟質ポリ塩化ビニル（１００μｍ）とアクリル系粘着剤（１０μｍ）の積層体）で、ウェハが圧着されているポリイミド接着シートをリングフレームに固定した。
【００３１】
これを公知の方法で、ポリイミド系接着剤層までフルカットダイシングを行い、１０ｍｍ×１０ｍｍのチップに分割し、ピックアップ、ボンディングおよびＩＣモールドをおこなった。
【００３２】
次いで、上記の手法により「パッケージクラック発生率」、「チップ飛散数」および「チップ剥離力」を測定した結果を表１に示す。
【００３３】
【実施例２】
アルキッド系剥離剤により剥離処理したポリエチレンナフタレートフィルム（厚さ２５μｍ：融点２７２℃、表面張力３４ｄｙｎ／ｃｍ ）に代えてシリコーン系剥離剤により剥離処理したポリエチレンナフタレートフィルム（厚さ２５μｍ：融点２７２℃、表面張力３０ｄｙｎ／ｃｍ）を用いた以外は、実施例１と同様の操作を行った。
【００３４】
ダイシングの際に、周縁の不定形部分のチップの飛散は起こったが、製品となりうる部分のチップの飛散は起きず、ＩＣの製造に支障は無かった。
結果を表１に示す。
【００３５】
【実施例３】
アルキッド系剥離剤により剥離処理したポリエチレンナフタレートフィルムに代えて、剥離処理を施さないポリ（４−メチルペンテン−１）フィルム（厚さ２５μｍ：融点２３５℃、表面張力２４ｄｙｎ／ｃｍ）を用いた以外は、実施例１と同様の操作を行った。
【００３６】
ダイシングの際に、周縁の不定形部分のチップの飛散は起こったが、製品となりうる部分のチップの飛散は起きず、ＩＣの製造に支障は無かった。
結果を表１に示す。
【００３７】
【表１】

Figure 0003592018

【図面の簡単な説明】
【図１】図１は、本発明に係るポリイミド接着シートの断面図を示す。
【図２】図２は、ポリイミド接着シートにシリコンウェハを熱圧着し、粘着シートに固定した状態を示す。
【図３】図３は、シリコンウェハをダイシングしている状態を示す。
【符号の説明】
１…ポリイミド接着シート
２…ポリイミド用工程フィルム
３…ポリイミド系接着剤層
４…粘着シート
５…リングフレーム
６…シリコンウェハ[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a polyimide adhesive sheet and a process film for polyimide, and more particularly to dicing a silicon wafer on which a plurality of semiconductor integrated circuits are formed into individual semiconductor integrated circuits, that is, IC chips (also referred to as chips or dies). The present invention relates to a polyimide adhesive sheet and a process film for polyimide used in a process of mounting an IC chip on a package lead frame or the like.
[0002]
TECHNICAL BACKGROUND OF THE INVENTION
Semiconductor wafers of silicon, gallium arsenide, etc. are manufactured in a large diameter state. This wafer is cut and separated (diced) into IC chips, and the next step is a die bonding step of mounting the IC chips on a package lead frame. (Also called a mounting process).
[0003]
In the die bonding step, the picked-up IC chips are supplied in a viscous liquid state such as an epoxy-based adhesive, a polyimide-based adhesive, or a silver paste applied to the IC chip mounting portion (mount portion) of the lead frame. A semiconductor device is manufactured through a wire bonding process and a resin molding process after being fixed via an adhesive for use. However, in the case of applying such a liquid adhesive, when the IC chip is extremely small, it is difficult to uniformly apply an appropriate amount of the adhesive, and the adhesive may protrude from the IC chip, or the IC chip may not be applied. When it is large, there is a problem that the bonding cannot be performed so as to have a sufficient bonding force, such as a shortage of the adhesive.
[0004]
In recent years, the degree of integration of semiconductor chips has tended to increase, and accordingly, the chip size has been increased, and the wiring has been miniaturized and multilayered. On the other hand, packages for accommodating chips tend to be small and thin so that they can be mounted on a printed wiring board at high density. These large-area thin packages are inferior in thermal shock resistance and moisture resistance as compared with conventional packages, and have a problem that package cracks are easily generated in a surface mounting process.
[0005]
On the other hand, a film adhesive using a polyimide resin having excellent heat resistance for bonding an IC chip to a lead frame has been proposed and reported to improve the durability of a semiconductor device. In addition, a dicing sheet for dicing and die bonding has been proposed in which such an adhesive for IC chip bonding is releasably laminated on a base film.
[0006]
However, there is no film adhesive using a polyimide resin that can be applied to the above dicing and die bonding steps, and thus has insufficient chip holding and transfer properties.
[0007]
[Object of the invention]
The present invention has been made in view of the prior art as described above, and provides a polyimide adhesive sheet and a process film for polyimide which are suitable for dicing and die bonding and can manufacture a semiconductor device in which a package crack is less likely to occur. Is to do.
[0008]
Summary of the Invention
The polyimide adhesive sheet according to the present invention is characterized by comprising a process film for polyimide having a surface tension of less than 40 dyn / cm, and a polyimide-based adhesive layer formed on the surface of the process film. Here, the melting point of the process film for polyimide is preferably 260 ° C. or more, and particularly preferably made of polyethylene naphthalate resin. The surface of the process film for polyimide is preferably subjected to a release treatment with an alkyd-based release agent.
[0009]
The process film for polyimide according to the present invention is used for forming and supporting a polyimide-based adhesive, and is characterized in that its surface tension is less than 40 dyn / cm. Here, the melting point of the process film for polyimide is preferably 260 ° C. or more, and particularly preferably made of polyethylene naphthalate resin. The surface of the process film for polyimide is preferably subjected to a release treatment with an alkyd-based release agent.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the polyimide adhesive sheet and the process film for polyimide according to the present invention will be specifically described.
[0011]
As shown in FIG. 1, the polyimide adhesive sheet 1 according to the present invention includes a process film for polyimide 2 and a polyimide adhesive layer 3 formed on the process film for polyimide 2. Before using the polyimide adhesive sheet 1 of the present invention, a release film may be laminated on the upper surface of the sheet 1 in order to protect the polyimide adhesive layer 3.
[0012]
The shape of the polyimide adhesive sheet 1 according to the present invention can take any shape such as a tape shape and a label shape.
The surface tension of the process film for polyimide 2 constituting the polyimide adhesive sheet 1 is less than 40 dyn / cm, preferably 30 to 40 dyn / cm, and a polyimide adhesive layer 3 described below is formed on the surface having such surface tension. Be formed. When the surface tension is in the range of 30 to 40 dyn / cm, the transferability of the polyimide-based adhesive layer 3 from the process film 2 for polyimide and the chip retention when used for dicing are particularly excellent. Further, the process film for polyimide 2 is preferably made of a heat-resistant resin, and the melting point of the resin is preferably 260 ° C. or more, more preferably 260 ° C. to 300 ° C., and particularly preferably 260 ° C. to 280 ° C.
[0013]
Specific examples of the process film 2 for polyimide include a polyethylene naphthalate film, a polyimide film, a polyetherimide film, a polyaramid film, a polyetherketone film, a polyetheretherketone film, a polyphenylenesulfide film, and a polyphenylenesulfide film. A (4-methylpentene-1) film or the like is used. Further, the process film 2 for polyimide may be a laminate of these films. Furthermore, a laminate of the above film and another film may be used. Of these, a polyethylene naphthalate film is particularly preferably used.
[0014]
The film thickness of the process film for polyimide 2 depends on its material, but is usually about 10 to 300 μm, preferably about 16 to 100 μm.
In order to impart the above-mentioned surface tension value, it is preferable to perform a release treatment on one side of the process film for polyimide 2 and to provide the polyimide-based adhesive layer 3 on this release- treated surface.
[0015]
As the release agent used for such a release treatment, alkyd-based, silicone-based, fluorine-based, unsaturated polyester-based, polyolefin-based, and wax-based release agents are used, and in particular, alkyd-based, silicone-based, and fluorine-based release agents are used. Is preferred since it has heat resistance. Particularly, an alkyd resin is preferable because the adhesion of the process film for polyimide to the substrate is high and the surface tension is easily adjusted.
[0016]
To release treatment surface of a polyimide for casting film 2 using the above release agent, a release agent as it is in a solventless or diluted or emulsified with a solvent, a gravure coater, Meyer bar coater, air knife coater, roll coater The laminate may be formed by application at room temperature or by heating or by electron beam curing, or by wet lamination, dry lamination, hot-melt lamination, melt-extrusion lamination, or co-extrusion.
[0017]
The polyimide resin used for the polyimide adhesive layer 3 constituting the polyimide adhesive sheet 1 includes the polyimide resin itself and a precursor of the polyimide resin. The polyimide resin has an imide bond in a side chain or a main chain. The term “polyimide resin precursor” refers to a material which gives the above-mentioned polyimide resin in a final bonding step. Specific examples of such a polyimide resin include a polyimide resin, a polyisoimide resin, a maleimide resin, a bismaleimide resin, a polyamideimide resin, a polyetherimide resin, and a poly-imide / isoindoloquinazolinedioneimide resin. These resins can be used alone or in combination of two or more. Among these, a polyimide resin is particularly preferable.
[0018]
The molecular weight of the polyimide resin is preferably about 10,000 to 1,000,000, and particularly preferably about 50,000 to 100,000.
The above-mentioned polyimide resin includes a thermosetting polyimide resin which undergoes an imidization reaction upon heating with a thermoplastic polyimide resin having no reactive functional group, and any of them may be used. When a thermosetting polyimide resin is used, the adhesive is temporarily bonded using a semi-cured resin (so-called B-stage), and then heat-cured to polyimide the adhesive layer, thereby completing the bonding process.
[0019]
Alternatively, a polyimide-based adhesive obtained by adding another polymer, oligomer, or low-molecular compound to a polyimide-based resin may be used. For example, various polymers and oligomers such as epoxy resin, amide resin, urethane resin, amic acid resin, acrylic resin and silicone resin; nitrogen-containing organic compounds such as triethanolamine and α, ω- (bis-3-aminopropyl) polyethylene glycol ether Compounds and the like can be mentioned as additives.
[0020]
In preparing the polyimide-based adhesive composition, a solvent capable of uniformly dissolving and dispersing the above components can also be used. The solvent is not particularly limited as long as it can uniformly dissolve and disperse the above-mentioned materials. , Tetrahydrofuran, ethyl cellosolve, dioxane, cyclopentanone, cyclohexanone, etc., and only one kind may be used or two or more kinds may be used in combination.
[0021]
The thickness of the polyimide adhesive layer 3 is preferably about 1 to 50 μm, and particularly preferably about 5 to 20 μm.
The polyimide adhesive sheet 1 of the present invention is heated at a temperature of 100 to 300 ° C., preferably about 120 to 150 ° C., and heated under a pressure of 1 to 10 kg / cm 2, preferably about 1 to 4 kg / cm 2. It can be press-bonded, and has an adhesive strength to the wafer of preferably 100 g / 25 mm or more, particularly preferably 400 g / 25 mm or more, by thermocompression bonding.
[0022]
Next, a main method of using the polyimide adhesive sheet 1 according to the present invention will be described. First, as shown in FIG. 2, separately by adhesive means 4, such as a pressure-sensitive adhesive sheet or a double-sided pressure-sensitive adhesive sheet was prepared, the polyimide adhesive sheet 1 is fixed to a ring frame 5, one surface of the polyimide adhesive layer 3 on the silicon wafer 6 Thermocompression bonding. The conditions for thermocompression bonding are as described above. The step of thermocompression bonding the wafer 6 onto the polyimide- based adhesive layer 3 may be performed before fixing the polyimide adhesive sheet 1 to the ring frame 5, or may be performed after the fixing. Next, using a cutting means such as a dicing saw, the silicon wafer 6 is cut to obtain an IC chip (see FIG. 3). The cutting depth at this time is set to a depth in consideration of the thickness of the silicon wafer 6 and the polyimide-based adhesive layer 3 and the wear of the dicing saw. Next, when the IC chip is picked up, the cut polyimide-based adhesive layer is fixedly left on the back surface of the IC chip and can be peeled off from the polyimide process film 2. At this time, the adhesive force between the IC chip and the polyimide-based adhesive layer is stronger than the adhesive force between the polyimide-based adhesive layer and the process film for polyimide, and the polyimide-based adhesive layer is fixed and left on one side of the IC chip. It can be peeled from the process film for polyimide.
[0023]
The IC chip to which the polyimide adhesive layer is fixed in this manner is mounted on the lead frame. The lead frame is heated before mounting the IC chip or immediately after mounting. The heating temperature is usually 100 to 300 ° C, preferably 150 to 250 ° C, and the heating time is usually 1 second to 60 minutes, preferably 1 second to 1 minute. By such heating, the polyimide resin is melted or cured, and the IC chip and the lead frame can be firmly bonded.
[0024]
The polyimide adhesive sheet of the present invention can be used for bonding semiconductor compounds, glass, ceramics, metals, and the like, in addition to the above-mentioned methods of use.
According to the polyimide adhesive sheet of the present invention, it is possible to easily form an adhesive layer on the back surface of the wafer without contaminating the wafer circuit surface, and furthermore, it is possible to heat and press at a relatively low temperature. There is a technical advantage such that thermal and mechanical damage to the device can be avoided. In addition, the polyimide adhesive sheet of the present invention, in addition to the above, for example, an adhesive film of a die pad, a film for improving the adhesion between the sealing resin and the back surface of the chip, a passivation film, an interlayer insulating film, an α-ray shielding film, a liquid crystal alignment film, It can be used for forming a photoresist film, a printed board protective film, a pattern forming film, an X-ray exposure masking film, and the like.
[0025]
Still another object of the present invention is to provide a processed film for polyimide which is particularly suitably used for the polyimide adhesive sheet. That is, the process film for polyimide according to the present invention is used for forming and supporting a polyimide-based adhesive, and is characterized in that its surface tension is less than 40 dyn / cm. Here, the melting point of the process film for polyimide is preferably 260 ° C. or more, and particularly preferably made of polyethylene naphthalate resin. The surface of the process film for polyimide is preferably subjected to a release treatment with an alkyd-based release agent. According to the process film for polyimide of the present invention, since the heat resistance of the process film is high, it can be applied to the application of a polyimide adhesive solution using a high boiling point solvent, a high temperature drying process, and the polyimide can be easily prepared. There are technical advantages such as that a system adhesive can be formed into a film. The polyimide processed film of the present invention can be used for applications other than the above, such as film formation of other resins using a high boiling point solvent.
[0026]
【The invention's effect】
According to the present invention, it can be used as a dicing tape at the time of dicing, and can be mounted on the back surface of the wafer as an adhesive, has excellent adhesive strength with a lead frame, etc., and has heat resistance and aging resistance after die bonding. A polyimide adhesive sheet excellent in properties and the like can be provided. Further, according to the present invention, it is possible to reduce a raw material loss when using a polyimide-based adhesive, and to form an adhesive layer having a uniform thickness. Further, when transferring the polyimide- based adhesive layer to the wafer, thermal and mechanical damage to the wafer can be avoided. Further, by using the polyimide adhesive sheet of the present invention, it is possible to manufacture a semiconductor device in which package cracks hardly occur.
[0027]
【Example】
Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited to these examples.
[0028]
In the following examples and comparative examples, the “package crack occurrence rate”, the “number of chips scattered”, and the “chip peeling force” were evaluated as follows.
Package cracking rate After dicing, the chip is taken out of the polyimide adhesive sheet, mounted on a lead frame, and after bonding, sealed with a predetermined mold resin (biphenyl type epoxy resin) under high pressure. The resin is cured at 175 ° C. for 6 hours to complete the package, and then left in an environment of 85 ° C. and 85% RH for 168 hours. Thereafter, VPS (Vapor Phase Soldering) at 215 ° C. (required time: 1 minute) is performed three times, and the presence or absence of cracks in the sealing resin is inspected by a scanning ultrasonic flaw detector SAT (Scanning Acoustic Tomography). The ratio of the number of cracks generated to the number of input samples is defined as the package crack generation rate.
Number of chips scattered After dicing for each chip size, the number of chips scattered (including irregular shaped portions on the periphery) was counted.
Chip peeling force The wafer bonded to the polyimide adhesive sheet was diced into each chip size, and the sheet side was fixed to a glass plate having a thickness of 10 mm with a double-sided adhesive sheet. A key-shaped vertical suspension jig is fixed on the surface of the diced chip with an instant adhesive, and is fixed with a loop-shaped nylon on the crosshead of an Instron 4204 universal material testing machine (manufactured by Instron). Then, this was hooked on the key portion of the jig, and the maximum value when vertically peeled at a crosshead speed of 500 mm / min was defined as the chip peeling force.
[0029]
Embodiment 1
A polyethylene naphthalate film (thickness: 25 μm: melting point: 272 ° C., surface tension: 34 dyn / cm) which has been subjected to release treatment with an alkyd-based release agent ) And a polyimide for step Fi Lum, a cyclohexanone solution of a thermoplastic polyimide-based adhesive is applied (solid content coating thickness 10 [mu] m) on the treated surface, dried (140 ° C., 3 min) to created a polyimide adhesive sheet.
[0030]
Then punching the polyimide contact adhesive sheet to a diameter of 120 mm, 4 inch wafer thermocompression bonding (140 ° C., 30 sec) were separately prepared pressure-sensitive adhesive sheet (soft polyvinyl chloride (100 [mu] m) and acrylic pressure-sensitive adhesive (10 [mu] m In the laminate of the above), the polyimide adhesive sheet to which the wafer was pressed was fixed to the ring frame.
[0031]
This was subjected to full-cut dicing to a polyimide-based adhesive layer by a known method, divided into chips of 10 mm × 10 mm, and subjected to pickup, bonding, and IC molding.
[0032]
Next, Table 1 shows the results of measuring the “package crack occurrence rate”, “chip scattering number”, and “chip peeling force” by the above-described method.
[0033]
Embodiment 2
A polyethylene naphthalate film (thickness: 25 μm: melting point: 272 ° C., surface tension: 34 dyn / cm) which has been subjected to release treatment with an alkyd-based release agent ) Was performed in the same manner as in Example 1 except that a polyethylene naphthalate film (thickness: 25 μm, melting point: 272 ° C., surface tension: 30 dyn / cm) subjected to a release treatment with a silicone-based release agent was used instead.
[0034]
At the time of dicing, chips were scattered in irregular shaped portions on the periphery, but chips were not scattered in portions that could become products, and there was no hindrance to IC manufacturing.
Table 1 shows the results.
[0035]
Embodiment 3
Except for using a poly (4-methylpentene-1) film (thickness: 25 μm: melting point: 235 ° C., surface tension: 24 dyn / cm) not subjected to a release treatment instead of the polyethylene naphthalate film subjected to a release treatment with an alkyd-based release agent Performed the same operation as in Example 1.
[0036]
At the time of dicing, chips were scattered in irregular shaped portions on the periphery, but chips were not scattered in portions that could become products, and there was no hindrance to IC manufacturing.
Table 1 shows the results.
[0037]
[Table 1]
Figure 0003592018

[Brief description of the drawings]
FIG. 1 shows a cross-sectional view of a polyimide adhesive sheet according to the present invention.
FIG. 2 shows a state in which a silicon wafer is thermocompression-bonded to a polyimide adhesive sheet and fixed to an adhesive sheet.
FIG. 3 shows a state in which a silicon wafer is being diced.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Polyimide adhesive sheet 2 ... Polyimide process film 3 ... Polyimide adhesive layer 4 ... Adhesive sheet 5 ... Ring frame 6 ... Silicon wafer

Claims (6)

ポリエチレンナフタレート樹脂からなり表面張力が４０ｄｙｎ／ｃｍ未満のポリイミド用工程フィルムと、該工程フィルム表面上に形成されたポリイミド系接着剤層とからなることを特徴とするポリイミド接着シート。A polyimide adhesive sheet comprising: a process film for polyimide made of polyethylene naphthalate resin and having a surface tension of less than 40 dyn / cm; and a polyimide-based adhesive layer formed on the surface of the process film. 前記ポリイミド用工程フィルムの融点が２６０℃以上であることを特徴とする請求項１に記載のポリイミド接着シート。The polyimide adhesive sheet according to claim 1, wherein the melting point of the process film for polyimide is 260 ° C or more. 前記ポリイミド用工程フィルムの表面が、アルキッド系剥離剤にて剥離処理されてなることを特徴とする請求項１または２に記載のポリイミド接着シート。Polyimide adhesive sheet according to claim 1 or 2 the surface of the polyimide for a casting film, characterized by comprising release-treated at alkyd-based release agent. ポリイミド系接着剤を成膜、支持するためのポリイミド工程フィルムであって、ポリエチレンナフタレート樹脂からなり表面張力が４０ｄｙｎ／ｃｍ未満であることを特徴とするポリイミド用工程フィルム。A polyimide process film for forming and supporting a polyimide adhesive, comprising a polyethylene naphthalate resin and having a surface tension of less than 40 dyn / cm. 融点が２６０℃以上であることを特徴とする請求項４に記載のポリイミド用工程フィルム。The process film for polyimide according to claim 4 , wherein the melting point is 260 ° C or higher. 表面が、アルキッド系剥離剤にて剥離処理されてなることを特徴とする請求項４または５に記載のポリイミド用工程フィルム。The process film for polyimide according to claim 4 or 5 , wherein the surface is subjected to a release treatment with an alkyd-based release agent.
JP00860097A 1996-01-22 1997-01-21 Polyimide adhesive sheet and process film for polyimide Expired - Fee Related JP3592018B2 (en)

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