JP3472745B2 - Etching apparatus and method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching processing apparatus and method for etching a wafer with an etching solution in the production of semiconductor devices.

[0002]

2. Description of the Related Art It is known that an etching solution used for producing a semiconductor device such as a wafer is easily affected by a use environment as a characteristic of the solution. For example, it is known that the concentration of the etching solution changes due to moisture absorption.

[0003]

However, if the concentration of the etching solution changes, the etching rate of the wafer by the etching solution becomes non-uniform, which causes a problem that uniform etching cannot be performed.

That is, even if the etching treatment of the wafer is performed by setting the concentration of the etching liquid that matches the purpose of use in order to achieve the desired etching amount and ratio, the deterioration of the etching liquid is not the same as described in the above example. When the concentration of the etching solution changes due to the above reasons, the etching rate changes, and there is a problem that the etching solution cannot be effectively used.

Therefore, an object of the present invention is to solve the above problems and to suppress contact between the etching liquid in the processing bath and the gas outside the processing bath, thereby significantly changing the concentration of the etching liquid. An object of the present invention is to provide an etching processing apparatus and method that can reduce the number of etching processes.

[0006]

In order to achieve the above object, the present invention is configured as follows.

[0007]

According to the first aspect of the present invention, in an etching processing apparatus for etching a wafer with an etching solution, a processing tank having a wafer loading / unloading opening for holding the etching solution, and the opening of the processing tank. A lid that moves between a closed position for closing the opening and an open position for opening the opening; A gas supply device that forms a gas curtain of gas to suppress contact between the etching liquid in the processing tank and the gas outside the processing tank is provided, and the lid is moved to open the opening. When the wafer is taken in and out through the opening, the inert gas is supplied by the gas supply device to form the inert gas atmosphere near the opening, The formation of the gas curtain of the inert gas covering the vicinity of the liquid surface of the etchant management vessel to provide an etching apparatus which is characterized in that so as to stop by the gas supply device.

[0009]

According to the second aspect of the present invention, when the cover is moved to open the opening, the inert gas is supplied by the gas supply device to form the inert gas atmosphere near the opening. At the same time, there is provided the etching processing apparatus according to the first aspect, wherein a gas curtain of an inert gas that covers the vicinity of the surface of the etching liquid in the processing tank is formed by the gas supply device.

According to the third aspect of the present invention, when the lid is moved to open the opening, or when the opening is started, the inert gas is supplied by the gas supply device. The etching treatment according to the first aspect, wherein an atmosphere is formed near the opening, and then a gas curtain of an inert gas that covers the vicinity of the liquid surface of the etching liquid in the processing tank is formed by the gas supply device. Provide a device.

According to the fourth aspect of the present invention, when the opening of the processing bath is closed by the lid, the surface of the etching liquid in the processing bath and the inner surface of the lid are formed. The space provides positive pressure, The etching processing apparatus in any one of the 1st-3rd aspect is provided.

According to a fifth aspect of the present invention, the lid has two lid members each of which is rotatably supported at the base end portion, and each of the base end portions of the respective lid members. The etching processing apparatus according to any one of the first to fourth aspects, wherein the engaging ends facing each other are engaged with each other at the closed position of the lid to close the opening of the processing bath. To do.

According to a sixth aspect of the present invention, the lid has two lid members each of which has a base end portion slidably supported by the processing tank, and each of the lid members has a base end portion. The etching processing apparatus according to any one of the first to fourth aspects, wherein the opposite engaging ends are engaged with each other at the closed position of the lid to close the opening of the processing bath. .

According to a seventh aspect of the present invention, the gas supply device is arranged on the surface of the lid at the processing tank side in the closed position, and the gas is supplied to the engaging end of the lid member. And a gas discharge part for forming an inert gas atmosphere for supplying the gas toward the chamber to form the inert gas atmosphere, and the surface of the lid at the closed position on the side of the processing tank and the surface of the gas. Gas ejecting part for ejecting the gas curtain, and the gas ejected in a planar form from the gas ejecting part for forming gas curtain, which is disposed on the surface of the lid at the processing tank side of the lid at the closed position. And a gas suction portion that forms a gas curtain with respect to the liquid surface of the etching liquid in the processing tank, and each lid member starts moving from the closed position to the open position of the lid. From the above-mentioned inert gas atmosphere forming gas discharge part The gas is supplied toward the engaging end portion of the lid member to form the inert gas atmosphere, and the gas is supplied from the gas curtain forming gas discharge portion before being positioned at the open position of the lid. The etching processing apparatus according to the fifth or sixth aspect is provided, in which a gas curtain is formed on the liquid surface of the etching liquid in the processing tank by discharging and sucking the gas with the gas suction unit.

According to an eighth aspect of the present invention, the gas supply device is arranged on a surface of the lid in the closed position on the side of the processing tank, and the gas is supplied to the engaging end of the lid member. Gas discharge part for forming an inert gas atmosphere by supplying the gas toward the chamber and the gas discharge for forming a gas curtain, which is arranged on the side of the processing tank and discharges the gas in a planar manner. And a gas curtain with respect to the liquid surface of the etching liquid in the processing tank by sucking the gas discharged in a planar shape from the gas discharging portion for forming the gas curtain, which is disposed on the processing tank side. And a gas suction part that forms a gas suction part that forms a gas from the closed position of the cover from the closed position to the open position. Supply toward the engaging end and The etching liquid in the processing tank is formed by forming an active gas atmosphere and discharging the gas from the gas curtain forming gas discharge unit before being located at the open position of the lid and sucking the gas by the gas suction unit. An etching processing apparatus according to the fifth or sixth aspect is provided, in which a gas curtain is formed on the liquid surface.

According to a ninth aspect of the present invention, a circulation path for circulating and supplying the etching liquid in the processing bath, a concentration measuring device for measuring the concentration of the etching liquid in the processing bath, and the etching liquid are the same. Further comprising a replenishment path for replenishing the circulation path with the component etching solution, based on the concentration of the etching solution in the processing tank measured by the concentration measuring device, the circulation path from the replenishment path to the etching solution. There is provided the etching processing apparatus according to any one of the first to eighth aspects, which is configured to replenish an etching solution of the same component.

[0018]

According to the tenth aspect of the present invention, the wafer is loaded into the processing bath through the wafer loading / unloading opening of the processing bath holding the etching liquid, and the wafer is loaded by the etching liquid in the processing bath. In an etching treatment method of carrying out an etching treatment and then carrying out the above-mentioned etched wafer through the wafer loading / unloading opening of the treatment bath to the outside of the treatment bath, the lid moves from a closed position to an open position, and When the opening of the processing tank is opened, a gas curtain of an inert gas is formed to cover the vicinity of the liquid surface of the etching solution in the processing tank to form the etching solution in the processing tank and the gas outside the processing tank. When the wafer is taken in and out through the opening while the contact is suppressed and the lid is moved to open the opening, the above inert gas is supplied to the wafer. An etching treatment method characterized in that an inert gas atmosphere is formed in the vicinity of the opening, and formation of a gas curtain of an inert gas covering the vicinity of the surface of the etching liquid in the processing tank is stopped. To do.

[0020]

According to an eleventh aspect of the present invention, when the lid is moved to open the opening, the inert gas is supplied to form the inert gas atmosphere near the opening, and the treatment tank is also provided. First, a gas curtain of an inert gas is formed to cover the vicinity of the liquid surface of the etching liquid.
No. 0 embodiment is provided.

According to the twelfth aspect of the present invention, when the lid is moved to open the opening, and when the opening is started, the inert gas is supplied to bring the inert gas atmosphere into the vicinity of the opening. The etching treatment method according to the tenth aspect is provided in which the gas curtain of the inert gas is formed after that, and then a gas curtain of the inert gas is formed to cover the vicinity of the surface of the etching liquid in the treatment tank.

According to a thirteenth aspect of the present invention, when the opening of the processing bath is closed by the lid, the surface of the etching liquid in the processing bath and the inner surface of the lid are formed. The etching treatment method according to any one of the tenth to twelfth aspects, wherein the space has a positive pressure.

According to the fourteenth aspect of the present invention, the two lid members that constitute the lid and each of which is rotatably supported at the base end portion in the processing tank are turned to turn the lid into the closed position. And when moving between the open position and the open position, the inert gas is supplied to bring the etching solution in the processing bath into contact with the gas outside the processing bath. The etching treatment method according to any one of the tenth to thirteenth aspects is provided.

According to the fifteenth aspect of the present invention, the two lid members that constitute the lid and are rotatably supported at the base end portions in the processing bath are slid to bring the lid into the closed position. When moving between the open position and the open position, the inert gas is supplied to suppress contact between the etching liquid in the processing bath and the gas outside the processing bath. The etching treatment method according to any one of the tenth to thirteenth aspects is provided.

According to the sixteenth aspect of the present invention, since each lid member starts moving from the closed position of the lid to the open position, the lid member is arranged on the surface of the lid in the closed position on the processing tank side. The inert gas atmosphere is formed by supplying the gas toward the engaging end portion of the lid member from the inert gas atmosphere forming gas discharge portion, and each lid member opens the lid at the open position. Prior to being located in the closed position, while discharging the gas in a planar manner from the gas curtain forming gas discharge portion arranged on the surface of the lid on the side of the processing tank, With respect to the liquid surface of the etching liquid in the processing tank, the gas suction section arranged on the surface on the processing tank side sucks the gas discharged in a planar shape from the gas discharge section for gas curtain formation. Fourteenth, adapted to form a gas curtain Providing an etching processing method according to the fifteenth aspect.

According to the seventeenth aspect of the present invention, since each lid member starts moving from the closed position of the lid to the open position, the lid member is arranged on the surface of the lid in the closed position on the processing tank side. The inert gas atmosphere is formed by supplying the gas toward the engaging end portion of the lid member from the inert gas atmosphere forming gas discharge portion, and each lid member opens the lid at the open position. Prior to being located at the processing tank side, the gas is discharged in a planar manner from the gas curtain forming gas discharging section arranged on the processing tank side, and the gas suction section arranged on the processing tank side is used for forming the gas curtain. 16. The etching treatment method according to the fourteenth or fifteenth aspect, wherein the gas discharged in a plane form from a gas discharge portion is sucked to form a gas curtain on the liquid surface of the etching liquid in the processing tank. I will provide a.

According to an eighteenth aspect of the present invention, the concentration of the etching solution in the processing bath is measured by a concentration measuring device,
Based on the concentration of the etching solution in the processing tank measured by the concentration measuring device, the circulation path for circulating the etching solution in the processing tank is replenished with the etching solution of the same component as the etching solution. The etching treatment method according to any one of the tenth to seventeenth aspects, wherein the etching solution having the same composition as the etching solution is replenished from the replenishing route.

According to a nineteenth aspect of the present invention, a rectangular frame body having the lid, the gas curtain forming gas discharge portion, and the gas suction portion is arranged on the opening of the processing tank,
The etching processing apparatus according to any one of the first to sixth and eighth aspects is provided in which the opening of the rectangular frame body is the opening of the processing tank.

[0030]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below in detail with reference to the drawings.

(First Embodiment) As shown in FIG. 1, an etching processing apparatus according to a first embodiment of the present invention is used in the etching processing apparatus for etching a wafer 3 with an etching solution 4 for loading and unloading a wafer. Opening 1
a processing tank 1 having a and holding the etching solution 4;
A lid that opens and closes between the closed position where the opening 1a of the processing tank 1 is closed and the open position where the opening 1a is opened, and the processing when the opening 1a of the processing tank 1 is opened by the lid. A gas supply device for supplying an inert gas such as nitrogen gas to the vicinity of the opening 1a in the tank 1 to prevent moisture absorption or evaporation by the etching solution 4 in the processing tank 1 is provided.

The processing tank 1 is composed of, for example, a rectangular box having an opening 1a for loading and unloading wafers at the top.

An example of the etching solution held in the processing tank 1 is one that can etch the wafers 3, ..., 3 at room temperature and is easily affected by humidity.
An etching solution effective for removing the natural oxide film formed at the bottom of the uneven portion of the wafer to be subjected to the etching process at the time of the etching process of the wafer 3 can be mentioned. When the above occurs, the uniform etching rate may vary. A more specific example of this type of etching solution is, for example, a product name Di manufactured by Daikin Industries, Ltd.
The components of the etching solution for cF-15 are IPA (isopropyl alcohol) 97% to 99.99%, NH ₄ HF ₂
Is 0.01% to 3%. Further, as another example, when the etching treatment of the wafers 3, ...
There are some cases where variations occur in the uniform etching rate. An example of this type of etching solution is BHF.

As an example of the wafer 3 to be etched, a wafer having a size of 6 inches to 12 inches can be cited.

The lid is a rectangular plate-like member that opens and closes the wafer loading / unloading opening 1a of the processing bath 1, and each base end portion 9 is rotatably supported by the hinge 8 or the like with respect to the processing bath 1. It has two cover members 6A and 6B that are formed. Engaging end portions 11 facing the base end portions 9 of the lid members 6A and 6B are formed to have L-shaped side surfaces that can engage with each other, and the lid member 6A and 6B have the closed position. Are engaged with each other to close the opening 1a of the processing tank 1.

The gas supply device is arranged on the surface of the lid in the closed position on the processing tank side, and directs the gas toward the engaging ends 11, 11 of the lid members 6A, 6B. Disposed on the processing tank side surface of the lid at the closed position, and the inert gas atmosphere forming gas discharge portions 10b, 10c, 10d for supplying the inert gas atmosphere.
Also, a gas discharge portion 10a for forming a gas curtain that discharges the gas in a planar shape, and a gas discharge portion 10a for forming a gas curtain that is disposed on the surface of the lid at the processing tank side of the lid at the closed position. A gas suction unit 13 that sucks the gas discharged in a planar shape to form a gas curtain with respect to the liquid surface of the etching liquid 4 in the processing tank, and each of the lid members 6A and 6B has the lid. After the movement from the closed position to the open position is started, the gas is supplied from the inert gas atmosphere forming gas discharge parts 10b, 10c, 10d to the engaging end parts 11, 11 of the lid members 6A, 6B. Is supplied to form the inert gas atmosphere, and the gas discharge portion 1 for forming the gas curtain is formed before the lid is positioned at the open position.
A gas curtain is formed on the liquid surface of the etching liquid in the processing tank by discharging the gas from 0a and sucking the gas by the gas suction unit 13.

More specifically, the lid member 6A is an example of a gas discharge portion for forming a gas curtain on the inner surface side of the lid member 6A at the closed position, that is, on the base end side of the processing tank side surface. First gas discharge part 10 for forming a functioning gas curtain
The second gas ejecting portion 10b in which a is disposed and functions as an example of an inert gas atmosphere forming gas ejecting portion in the vicinity of the engaging end portion.
Are arranged. As shown in FIG. 5, the gas curtain forming first gas discharge part 10a is composed of a plurality of nozzles, such as four nozzles. A gas curtain 27 of an inert gas can be formed on the liquid surface of the etching liquid 4 inside. As shown in FIG. 5, the second gas discharge portion 10b is composed of a plurality of nozzles such as four nozzles, and an inert gas such as nitrogen gas is supplied from each nozzle to the engaging end portion of the lid member 6A. It is intended for supply.

On the other hand, the lid member 6B functions as an example of an inert gas atmosphere forming gas discharge portion in the vicinity of the engaging end portion of the inner surface side of the lid member 6B at the closed position, that is, the surface on the processing tank side. The third gas discharge portion 10c is disposed, and the fourth gas discharge portion 10d that functions as an example of the inert gas atmosphere forming gas discharge portion is disposed on the base end side. A gas suction unit 13 for sucking a gas curtain is arranged between the gas discharge unit 10d. As shown in FIG. 5, the third gas discharge portion 10c is composed of a plurality of nozzles such as four nozzles, and an inert gas such as nitrogen gas is directed from each nozzle toward the engaging end portion of the lid member 6B. To supply. The fourth gas discharge unit 10d is composed of a plurality of nozzles, such as four nozzles, as shown in FIG.
An inert gas such as nitrogen gas is supplied from each nozzle to the lid member 6 described above.
B is supplied toward the engaging end portion. Also,
The nozzle-shaped gas suction part 13 for gas curtain suction is shown in FIG.
As shown in, for example, it is composed of one rectangular suction port,
By sucking the inert gas discharged in a planar shape from the gas curtain forming first gas discharge portion 10a through the suction port, the liquid surface is formed on the liquid surface of the etching liquid 4 in the processing tank 1. The surface-shaped gas curtain 27 of inert gas is formed to cover the.

As shown transparently in FIG. 5, the nozzle shape of the first gas discharge part 10a is roughly rectangular, such as a rectangle which facilitates the formation of a gas curtain, while the second gas discharge part 10b and the third gas discharge part 10b are formed. The gas ejecting portion 10c and the fourth gas ejecting portion 10d are formed in a substantially circular shape so that gas injection can be performed. Further, the nozzles of the second gas discharger 10b, the third gas discharger 10c, and the fourth gas discharger 10d are arranged at equal intervals so that the gas can be sprayed as uniformly as possible.

FIG. 4 shows a piping system for each nozzle and the like. In FIG. 4, the nitrogen gas is supplied to the first gas discharge unit 10a through the nitrogen gas supply passage 12a,
Nitrogen gas is supplied to the gas discharge unit 10c through the nitrogen gas supply passage 12c. A supply passage 25 is connected to the nitrogen gas supply passage 12a and the nitrogen gas supply passage 12c, and the nitrogen gas whose supply pressure is adjusted by the nitrogen gas adjusting valve 15 from the same nitrogen gas supply source is supplied via the supply passage 25 to the nitrogen gas. Gas supply path 1
2a and the nitrogen gas supply path 12c. Also, the second
Nitrogen gas is supplied to the gas discharge portion 10b through the nitrogen gas supply passage 12b, and nitrogen gas is supplied to the fourth gas discharge portion 10d through the nitrogen gas supply passage 12d. A supply passage 26 is connected to the nitrogen gas supply passage 12b and the nitrogen gas supply passage 12d, and the nitrogen gas whose supply pressure is adjusted by the nitrogen gas adjusting valve 15 from the same nitrogen gas supply source is supplied via the supply passage 26 to the nitrogen gas. The gas is supplied to the gas supply path 12b and the nitrogen gas supply path 12d. Nitrogen gas supply passage 12a and nitrogen gas supply passage 12
A nitrogen gas supply flow meter 16, a nitrogen gas supply flow rate adjusting valve 17, and a nitrogen gas supply opening / closing valve 18 are provided in each of the c, the nitrogen gas supply path 12b, and the nitrogen gas supply path 12d. Further, the processing tank 1 is provided with a pressure measuring device 20 for measuring the pressure in the space 5 above the liquid surface of the etching liquid 4 in the processing tank 1. A discharge passage 7 for the etching liquid 4 is provided at the bottom of the processing bath 1, and an opening / closing valve 21 for discharging the etching liquid is provided in the discharge passage 7. When the opening / closing valve 21 is opened, the etching liquid in the processing bath 1 is opened. 4 can be discharged through the discharge path 7. A gas discharge passage 14 is connected to the gas suction portion 13, and the gas discharge passage 14 is provided with a gas discharge flow rate adjusting valve 22, a gas discharge opening / closing valve 23, and a blower 24 for performing a suction operation. By driving, the inert gas is sucked from the gas suction portion 13 via the gas discharge passage 14. Although not specifically shown, the control device 19 receives the measured values of the nitrogen gas regulating valves 15, the nitrogen gas flow meters 16, and the pressure measuring device 20, and also measures these measured values. Based on a predetermined etching program and instructions from an operator, each nitrogen gas flow rate adjusting valve 17, each nitrogen gas on-off valve 18, etching solution discharging on-off valve 21, gas discharging flow rate adjusting valve 22. The operations of the gas discharge on-off valve 23 and the blower 24 are controlled. Further, the control device 19 may also control driving of a driving device (not shown) such as a motor or an air cylinder that drives the opening / closing operation of the lid members 6A and 6B. Therefore, it is possible to automatically perform the opening / closing operation of the lid members 6A and 6B, the nitrogen gas supply operation, and the like, which will be described below, by the control device 19.

In this way, the gas supply device is roughly composed of the first gas discharge part 10a, the second gas discharge part 10b, the third gas discharge part 10c, the fourth gas discharge part 10d and the gas suction part 13. ing.

An etching treatment method carried out by the etching treatment apparatus having the above structure will be described.

As shown in FIG. 1, the lid members 6A and 6B are provided.
When the opening 1a of the processing tank 1 is closed (when the opening of the lid members 6A and 6B is 0 degrees), the liquid level of the etching solution 4 in the processing tank 1 and the lid member 6A,
The space 5 formed with the inner surface of 6B has a positive pressure (for example, 10 to 10).
20 Pa). To create this positive pressure, the second
A small amount of nitrogen gas may be supplied into the space 5 from the gas ejection unit 10b and the fourth gas ejection unit 10d.
If a positive pressure can be formed only by evaporation of the etching liquid 4, such supply of nitrogen gas is unnecessary.

Then, as shown in FIG. 2, the lid members 6A,
6B is synchronized with the hinge 8 from the closed position toward the open position,
Start opening by 8. Before moving the lid members 6A and 6B from the closed position to the open position, nitrogen gas is at least engaged from the second gas discharge portion 10b and the fourth gas discharge portion 10d in the vicinity of the engagement end portions 11, respectively. When it is supplied toward the end 11 side, the engagement of the engaging ends 11, 11 of the lid members 6A, 6B is released, and a gap 28 begins to be formed between the engaging ends 11, 11, the processing tank A nitrogen gas flow is formed so that the nitrogen gas is discharged from the space 5 of 1 toward the outside of the processing tank. By this nitrogen gas flow, the engaging end portions 11 of the lid members 6A and 6B,
The engagement of 11 is released to prevent outside air such as moisture from trying to enter from the outside of the processing tank toward the inside of the processing tank. In this way, the second gas discharge portion 10b and the fourth gas discharge portion 1
The nitrogen gas is supplied from 0d toward each engagement end portion 11 side at least at all of the period when the lid members 6A and 6B are in the closed position, that is, from the open position of 0 degrees to 90 degrees.

On the other hand, when the lid members 6A and 6B start to open from the closed position and are opened by, for example, about 15 degrees (a state as shown in FIG. 2), the lid members 6A and 6B are also seen from the third gas discharge portion 10c.
The nitrogen gas is supplied toward the area that has started to be opened by, and together with the supply of the nitrogen gas from the second gas discharge portion 10b and the fourth gas discharge portion 10d, the engaging end portions 11 of the lid members 6A and 6B are A nitrogen gas atmosphere is formed in the vicinity of the space 11 between the two.

Further, when the lid members 6A, 6B start to open from the closed position and are opened by, for example, about 75 degrees (the lid members 6A, 6B).
B is located at an intermediate open position between FIG. 2 and FIG. 3), the second gas discharge portion 10b and the fourth gas discharge portion 10d.
In addition to the nitrogen gas being supplied from each of the engaging end portions 11 to the blower, the inert gas is discharged from the first gas discharge portion 10a in place of the third gas discharge portion 10c while the blower blows. 24 is driven to be sucked by the gas suction unit 13, and the formation of a planar inert gas gas curtain 27 that covers the liquid surface of the etching liquid 4 in the processing tank 1 is started.

Then, as shown in FIG. 3, the lid members 6A,
When 6B is located at the open position (when it is opened 90 degrees), a small amount of nitrogen gas is supplied from the second gas discharge portion 10b and the fourth gas discharge portion 10d toward each engagement end 11 side. At the same time, the inert gas is discharged in a plane form from the first gas discharge part 10a, the blower 24 is driven, and the gas is sucked by the gas suction part 13. A planar inert gas gas curtain 27 is formed to cover the top. In this state, the second gas discharge part 1
0b and a small amount of nitrogen gas supplied from the fourth gas discharge unit 10d, the engaging ends 11, 11 of the lid members 6A, 6B.
A nitrogen gas atmosphere is formed in the vicinity of the space, and a planar inert gas gas curtain 27 is formed on the liquid surface of the etching liquid 4 in the processing bath 1 to form the liquid surface. By covering the above, the gas outside the processing tank is prevented from coming into contact with the etching solution 4 in the processing tank 1.

Thus, with the lid members 6A, 6B in the open position, the carrier 3 containing a large number of wafers 3, ..., 3 is loaded into or unloaded from the processing bath 1.
For example, at the time of loading, the carrier 3 accommodating a large number of wafers 3, ..., 3 is placed in the processing tank 1 and the lid member 6 in the open position.
After passing between A and 6B, it is immersed in the etching solution 4 to start the etching process. Lid member 6 in open position
When passing between A and 6B, the supply of the inert gas from the first gas discharge unit 10a is stopped, and the suction amount by the gas suction unit 13 is significantly reduced or stopped, so that the wafers 3 ,. , 3 by contacting the inert gas injected from the first gas discharge unit 10a.
This is because the liquid held on the respective surfaces is spread and non-uniformly distributed to prevent non-uniform etching during the etching process. A small amount of nitrogen gas supplied from the second gas discharge part 10b and the fourth gas discharge part 10d is retained on the respective surfaces of the wafers 3, ..., 3 even if they contact the wafers 3 ,. There is no effect because the amount of the liquid in it is not distributed unevenly.

Then, as soon as the wafers 3, ..., 3 are stored in the processing tank 1, the supply of the inert gas from the first gas discharge part 10a and the suction by the gas suction part 13 are restarted, The blower 24 is driven to discharge the inert gas in a planar form from the first gas discharge part 10a to drive the gas suction part 13
The gas curtain 27 of the planar inert gas that is sucked by and covers the liquid surface of the etching liquid 4 in the processing tank 1.
To form again.

Then, contrary to the opening operation, as shown in FIGS. 3 and 2, the lid members 6A and 6B start to be closed from the open position to the closed position by the hinges 8 and 8 in synchronization with each other. For example, when the lid members 6A and 6B are closed from 90 degrees to 75 degrees, the blower 24 is driven and the gas suction section 1 is discharged while the above-mentioned inert gas is discharged from the first gas discharge section 10a in a planar shape.
A gas curtain 2 of a planar inert gas which is sucked by 3 and covers the liquid surface of the etching liquid 4 in the processing tank 1.
7 is formed, and the second gas discharge portion 10b and the fourth gas discharge portion 10b are formed.
Nitrogen gas continues to be supplied from the gas discharge portion 10d toward each engagement end portion 11 side.

Next, as shown in FIGS. 3 and 2, the lid members 6A and 6B are synchronized with each other from the open position to the closed position,
For example, when the lid members 6A and 6B are closed from 75 degrees to 15 degrees, the supply of the inert gas from the first gas discharge section 10a and the suction by the gas suction section 13 are stopped, and the planar inert gas is stopped. The formation of the gas curtain 27 is stopped.
Instead, from the third gas discharge part 10c to the lid members 6A, 6B
To supply the nitrogen gas toward the region between the engagement end portions 11 and 11, and to supply the second gas discharge portion 10b and the fourth gas discharge portion 1 to each other.
Together with the supply of nitrogen gas from 0d, the lid members 6A, 6B
A nitrogen gas atmosphere is formed in the vicinity of the engaging end portions 11, 11.

Then, as shown in FIGS. 2 to 1, the lid members 6A and 6B are synchronized with each other from the open position to the closed position,
For example, lid members 6A and 6B from the closed position of 15 degrees to 0 degrees
Is closed, the gas supply from the third gas discharge part 10c is stopped, and only the nitrogen gas is supplied from the second gas discharge part 10b and the fourth gas discharge part 10d.
A nitrogen gas atmosphere is formed in the vicinity of the engagement ends 11 of A and 6B.

Thereafter, as shown in FIG. 1, the lid members 6A,
When 6B is closed, the second gas discharge part 10b and the fourth gas discharge part 10b
A small amount of nitrogen gas is supplied into the space 5 from the gas discharge part 10d, and the space 5 formed by the liquid surface of the etching liquid 4 in the processing tank 1 and the inner surfaces of the lid members 6A and 6B is exposed. Pressure. If a positive pressure can be formed only by evaporation of the etching liquid 4, such supply of nitrogen gas is unnecessary.

When the wafer is unloaded, the lid members 6A and 6B are opened and the processing tank 1 is opened at the open position as in the case of loading the wafer.
After the wafers 3, ..., 3 in the etching solution 4 are taken out for each carrier 2, the lid members 6A, 6B are closed again.

It should be noted that when the opening degree of the lid members 6A and 6B is from 0 degree to 15 degrees, the inert gas injected from the second gas discharge portion 10b and the fourth gas discharge portion 10d for forming the inert gas atmosphere is kept. The flow rate is about 30 / min, and the lid member 6A,
When the opening of 6B is from 15 degrees to 90 degrees, the flow rate of the inert gas injected from the first gas discharge part 10a for forming the gas curtain is set to about 150 liters / min. Also,
The gas curtain formation is stopped when the wafers 3, 3, ... Both 10b and the 4th gas discharge part 10d are set to about 5 liters / min in total. Further, in the suction part 13, when forming a gas curtain, the opening is 100%, while the wafers 3, ...
0% or 5-10% of the opening area to stop the gas curtain formation when taking in and out, that is, carrying in and out.
When the lid is in the closed position, it is set to 0%.

The flow rate of the nitrogen gas supplied from the second gas discharge portion 10b and the fourth gas discharge portion 10d may be increased proportionally as the opening degree of the lid members 6A and 6B increases. However, it is not limited to, for example, 0 to 15 degrees, 15 to 75 degrees, or 75 degrees.
The flow rate of the nitrogen gas may be increased by dividing the flow rate into three stages from 0 to 90 degrees. Alternatively, it may be divided into any two stages or four or more stages.

Regardless of the position of the lid member, it is preferable that the direction of discharge of the gas discharged from each of the gas discharge units is as much as possible to avoid direct contact with the etching liquid surface. The reason is that the gas discharged from each gas discharge portion comes into direct contact with the surface of the etching liquid, and as a result, the evaporation of the components from the etching liquid is promoted and the concentration change of the etching liquid is likely to occur.

Note that FIG. 25 shows an example of the operation timings of the respective discharge and suction sections in the first embodiment. The horizontal axis represents the opening of the lid member, and shows the state in which the lid member is located from the closed position to the open position, and after the wafer has been taken in and out, the lid member reaches the closed position again. The gas discharge portion 10a for forming the gas curtain is
Gas is discharged at the maximum flow rate between 75 and 90 degrees, and is not discharged in other sections. The second gas ejecting unit 10b and the fourth gas ejecting unit 10d greatly reduce the flow rate during wafer loading / unloading to such an extent that the wafer loading / unloading is not hindered, but a constant flow rate is discharged in other sections to form a gas atmosphere. . The third gas discharger 10c discharges the gas at a constant flow rate only in the section of 15 degrees to 75 degrees. The suction part 13 is from 75 degrees to 90 degrees
The gas is sucked at the maximum flow rate between intervals, and the suction force is greatly reduced in other sections to slightly suck the gas.
The degree of opening of the horizontal axis is 0%, and the opening degree is 0%.
If it is read that the opening degree is 90% when the opening degree is 100%, it can be applied as an example of the timing of the operation of each discharge part and the suction part in the following embodiments of the slide type lid member.

According to the first embodiment, the lid member 6A,
When the opening 1a of the processing tank 1 is opened and closed by 6B and when the opening 1a is opened, the gas discharge parts 10a, 10b, 10c, 10
By supplying an inert gas from d to form an inert gas atmosphere and forming a gas curtain 27 of the inert gas that covers the vicinity of the liquid surface of the etching liquid in the processing tank, the etching liquid in the processing tank 1 is formed. It is possible to prevent the gas outside the processing tank from coming into contact with the surface of the processing tank 4 and prevent the evaporation of the etching solution 4 in the processing tank or the absorption of moisture in the gas outside the processing tank even when the lid member is opened and closed. It is possible to suppress the change of the etching rate to the minimum, and it is possible to maintain a stable etching rate. At the same time, it is possible to prevent the surface of the etching solution 4 in the processing tank 1 from coming into contact with the gas outside the processing tank, so that the evaporation component of the etching solution 4, for example, the etching solution of BHF is fluorinated. The evaporation of ammonium can be suppressed, the concentration change of the etching liquid can be suppressed, and the deterioration can be suppressed. In particular, when the lid members 6A and 6B are located at the open position, the liquid surface of the etching liquid 4 in the processing tank 1 is covered with the gas curtain 27 of the inert gas, so that the gas outside the processing tank comes into contact with the etching liquid 4. Even if the lid members 6A and 6B are in the open position, it is possible to reliably prevent the evaporation of the etching solution 4 or the absorption of moisture in the gas outside the processing tank, and to minimize the change in the etching rate. it can.

Further, by providing the lid members 6A and 6B on the processing tank 1 and making the pressure inside the processing tank 1 positive from the outside of the processing tank 1 at the closed position of the lid members 6A and 6B, the outside of the processing tank Of the gas does not enter the processing tank, the evaporation of the etching liquid 4 in the processing tank or the absorption of moisture in the gas outside the processing tank can be prevented, and the change in the etching rate can be minimized. A stable etching rate can be maintained.

The present invention is not limited to the above embodiment, but can be implemented in various other modes.

(Second Embodiment) For example, as an etching processing apparatus according to a second embodiment of the present invention, as shown in FIGS. 6 to 9, not the lid members 6A and 6B but the processing tank 1 is used. A gas discharge portion 31 for forming a gas curtain formed of a plurality of rectangular nozzles is provided in a portion corresponding to the upper space 5, and a gas suction portion 32 having a rectangular suction port is provided so as to face the gas discharge portion 31. May be.
That is, the first gas discharge part 10a of the lid member 6A discharges gas at the same timing as the third gas discharge part 10c,
Along with the supply of nitrogen gas from the second gas discharge portion 10b and the fourth gas discharge portion 10d, a nitrogen gas atmosphere is formed near the engaging ends 11, 11 of the lid members 6A, 6B. On the other hand, while the inert gas is ejected from the gas curtain forming gas ejection portion 31 in a planar manner, the blower 24 is driven to be sucked by the gas suction portion 32, and the liquid level of the etching liquid 4 in the processing tank 1 A planar inert gas gas curtain 27 is formed to cover the top.

FIG. 9 shows a piping system for each nozzle and the like. In FIG. 9, the nitrogen gas supply passage 33 supplies nitrogen gas to the gas curtain forming gas discharge portion 31. A nitrogen gas adjusting valve 15 is provided in the nitrogen gas supply passage 33.
A nitrogen gas supply flow rate adjusting valve 37 and a nitrogen gas supply opening / closing valve 38 are provided and connected to the nitrogen gas supply source. Further, the nitrogen gas supply passage 1 is provided in the first gas discharge portion 10a.
Nitrogen gas is supplied by 2a, and the second gas discharge part 10b
Is supplied with nitrogen gas through the nitrogen gas supply passage 12b,
Nitrogen gas is supplied to the third gas discharge unit 10c through the nitrogen gas supply passage 12c, and nitrogen gas is supplied to the fourth gas discharge unit 10d through the nitrogen gas supply passage 12d. A supply path 40 having a nitrogen gas supply flow meter 16 is connected to the nitrogen gas supply path 12a and the nitrogen gas supply path 12b, and a nitrogen gas supply flow meter 16 is connected to the nitrogen gas supply path 12c and the nitrogen gas supply path 12d. Another supply path 40 that is provided is connected, and the two supply paths 40, 40 are connected to one supply path 39. Therefore, the nitrogen gas whose supply pressure is adjusted by the nitrogen gas adjusting valve 15 from the same nitrogen gas supply source is supplied to the supply path 3
It is supplied to the two supply paths 40, 40 via 9 and further supplied to the nitrogen gas supply paths 12a, 12b, 12c, 12d, respectively. Nitrogen gas supply paths 12a, 12b,
A nitrogen gas supply flow rate adjusting valve 17 and a nitrogen gas supply opening / closing valve 18 are provided in each of 12c and 12d. Further, the processing tank 1 is provided with a pressure measuring device 20 for measuring the pressure in the space 5 above the liquid surface of the etching liquid 4 in the processing tank 1. A discharge passage 7 for the etching liquid 4 is provided at the bottom of the processing bath 1, and an opening / closing valve 21 for discharging the etching liquid is provided in the discharge passage 7. When the opening / closing valve 21 is opened, the etching liquid in the processing bath 1 is opened. 4 can be discharged through the discharge path 7. A gas discharge passage 34 is connected to the gas suction portion 32, and the gas discharge passage 34 is provided with a gas discharge flow rate adjusting valve 22, a gas discharge opening / closing valve 23, and a blower 24 for performing a suction operation. By driving, the inert gas is sucked from the gas suction portion 32 through the gas discharge passage 34. Although not specifically shown, the control device 19 includes the nitrogen gas regulating valves 1
5, the measured values of the nitrogen gas flow meter 16 and the pressure measuring device 20 are input, and the flow rate of each nitrogen gas is measured based on these measured values and a predetermined etching program and instructions from the operator. Regulator valves 17, 37, on-off valves 18, 38 for nitrogen gas, on-off valve 21 for discharging etching solution,
The operations of the gas discharge flow rate adjusting valve 22, the gas discharge on-off valve 23, and the blower 24 are controlled. Also,
The control device 19 may also control the drive of a drive device such as a motor or an air cylinder that drives the opening / closing operation of the lid members 6A and 6B. Therefore, it is possible to automatically perform the opening / closing operation of the lid members 6A and 6B, the nitrogen gas supply operation, and the like, which will be described below, by the control device 19.

An etching processing method performed by the etching processing apparatus of the second embodiment will be described.

As shown in FIG. 6, the lid members 6A and 6B are provided.
When the opening 1a of the processing tank 1 is closed (when the opening of the lid members 6A and 6B is 0 degrees), the liquid level of the etching solution 4 in the processing tank 1 and the lid member 6A,
The space 5 formed with the inner surface of 6B has a positive pressure (for example, 10 to 10).
20 Pa). To create this positive pressure, the second
A small amount of nitrogen gas may be supplied into the space 5 from the gas ejection unit 10b and the fourth gas ejection unit 10d.
If a positive pressure can be formed only by evaporation of the etching liquid 4, such supply of nitrogen gas is unnecessary.

Then, as shown in FIG. 7, the lid members 6A,
6B is synchronized with the hinge 8 from the closed position toward the open position,
Start opening by 8. Before moving the lid members 6A and 6B from the closed position to the open position, nitrogen gas is at least engaged from the second gas discharge portion 10b and the fourth gas discharge portion 10d in the vicinity of the engagement end portions 11, respectively. When it is supplied toward the end 11 side, the engagement of the engaging ends 11, 11 of the lid members 6A, 6B is released, and a gap 28 begins to be formed between the engaging ends 11, 11, the processing tank A nitrogen gas flow is formed so that the nitrogen gas is discharged from the space 5 of 1 toward the outside of the processing tank. By this nitrogen gas flow, the engaging end portions 11 of the lid members 6A and 6B,
The engagement of 11 is released to prevent outside air such as moisture from trying to enter from the outside of the processing tank toward the inside of the processing tank. In this way, the second gas discharge portion 10b and the fourth gas discharge portion 1
The nitrogen gas is supplied from 0d toward each engagement end portion 11 side at least at all of the period when the lid members 6A and 6B are in the closed position, that is, from the open position of 0 degrees to 90 degrees.

On the other hand, when the lid members 6A and 6B start to open from the closed position and open by, for example, about 15 degrees (a state as shown in FIG. 7), the first gas discharge portion 10a and the third gas discharge portion 10c.
Also, from the above, nitrogen gas is supplied toward the area that has started to be opened by the lid members 6A and 6B, and together with the supply of nitrogen gas from the second gas discharge portion 10b and the fourth gas discharge portion 10d,
A nitrogen gas atmosphere is formed in the vicinity of the engaging ends 11, 11 of the lid members 6A, 6B.

Further, when the lid members 6A, 6B start to open from the closed position and are opened by, for example, about 75 degrees (the lid members 6A, 6B).
In a state in which B is located at an intermediate open position between FIG. 7 and FIG. 8), nitrogen gas is supplied from the second gas discharge portion 10b and the fourth gas discharge portion 10d toward each engagement end portion 11 side. In addition to the above, the first gas discharge part 10a and the third gas discharge part 10
Instead of c, the blower 24 is driven while the above-mentioned inert gas is discharged from the gas-curtain forming gas discharge part 31 in a planar manner, and is sucked by the gas suction part 32, so that the etching solution 4 in the processing bath 1 is discharged. The formation of the planar gas curtain 27 of inert gas covering the liquid surface is started.

Then, as shown in FIG. 8, the lid members 6A,
When 6B is located at the open position (when it is opened 90 degrees), a small amount of nitrogen gas is supplied from the second gas discharge portion 10b and the fourth gas discharge portion 10d toward each engagement end 11 side. At the same time, the blower 24 is driven to be sucked by the gas suction part 32 while discharging the above-mentioned inert gas in a planar form from the gas curtain forming gas discharge part 31, and thus the processing tank 1
A planar gas curtain 27 of inert gas is formed to cover the liquid surface of the etching liquid 4 therein. In this state, the second
With a small amount of nitrogen gas supplied from the gas discharge part 10b and the fourth gas discharge part 10d, a nitrogen gas atmosphere is formed near the engaging ends 11, 11 of the lid members 6A, 6B, and On the liquid surface of the etching liquid 4 in the processing tank 1, a flat inert gas gas curtain 27 is formed.
Is formed to cover the liquid surface, so that the gas outside the processing bath cannot contact the etching liquid 4 in the processing bath 1.

Thus, with the lid members 6A, 6B in the open position, the carrier 3 containing a large number of wafers 3, ..., 3 is carried in or out of the processing tank 1.
For example, at the time of loading, the carrier 3 accommodating a large number of wafers 3, ..., 3 is placed in the processing tank 1 and the lid member 6 in the open position.
After passing between A and 6B, it is immersed in the etching solution 4 to start the etching process. Lid member 6 in open position
When passing between A and 6B, the supply of the above-mentioned inert gas from the gas curtain forming gas discharge part 31 is stopped, and the suction amount by the gas suction part 32 is greatly reduced or stopped, so that the wafers 3 ,. When the inert gas sprayed from the gas-curtain forming gas discharge part 31 comes into contact with the wafer 3, the liquid held on the surfaces of the wafers 3, ... This is to prevent uneven etching that is distributed and is caused during the etching process. A small amount of nitrogen gas supplied from the second gas discharge part 10b and the fourth gas discharge part 10d is retained on the respective surfaces of the wafers 3, ..., 3 even if they contact the wafers 3 ,. There is no effect because the amount of the liquid in it is not distributed unevenly.

Then, as soon as the wafers 3, ..., 3 are stored in the processing tank 1, the inert gas supply from the gas curtain forming gas discharge part 31 and the suction by the gas suction part 32 are restarted. The gas discharge part 3 for forming the gas curtain
The blower 24 while discharging the above inert gas from 1
Is driven to be sucked by the gas suction unit 32, and a planar gas curtain 27 of inert gas that covers the liquid surface of the etching liquid 4 in the processing tank 1 is formed again.

Then, contrary to the above-mentioned opening operation, as shown in FIGS. 8 to 7, the lid members 6A and 6B are synchronously started to be closed by the hinges 8 and 8 from the open position to the closed position. For example, when the lid members 6A and 6B are closed from 90 degrees to 75 degrees, the blower 24 is driven and the gas suction section 32 sucks while the above-mentioned inert gas is discharged in a planar manner from the gas curtain forming gas discharge section 31. As a result, a planar gas curtain 27 of inert gas that covers the liquid surface of the etching liquid 4 in the processing tank 1 is formed, and at the same time, the second gas discharge portion 1 is formed.
0b and the 4th gas discharge part 10d continue supplying nitrogen gas toward each engagement end part 11 side.

Then, as shown in FIGS. 8 to 7, the lid members 6A and 6B are synchronized with each other from the open position to the closed position,
For example, when the lid members 6A and 6B are closed from 75 degrees to 15 degrees, the supply of the above-mentioned inert gas from the gas curtain forming gas discharge section 31 and the suction by the gas suction section 32 are stopped so that the planar shape is not changed. The formation of the gas curtain 27 of active gas is stopped. Instead, the first gas discharge part 10a and the third gas discharge part 10a
Nitrogen gas is supplied from the gas discharge portion 10c toward the region between the engaging end portions 11, 11 by the lid members 6A, 6B, and the second
Along with the supply of nitrogen gas from the gas discharge portion 10b and the fourth gas discharge portion 10d, the engaging end portion 1 of the lid members 6A and 6B is also included.
A nitrogen gas atmosphere is formed in the vicinity of 1 and 11.

Then, as shown in FIGS. 7 to 6, the lid members 6A and 6B are synchronized with each other from the open position to the closed position,
For example, lid members 6A and 6B from the closed position of 15 degrees to 0 degrees
When the lid is closed, the gas supply from the first gas discharge part 10a and the third gas discharge part 10c is stopped, and only the nitrogen gas is supplied from the second gas discharge part 10b and the fourth gas discharge part 10d. 6A, 6B engaging end portions 11, 11
A nitrogen gas atmosphere is formed near the space.

Then, as shown in FIG. 6, the lid members 6A,
When 6B is closed, the second gas discharge part 10b and the fourth gas discharge part 10b
A small amount of nitrogen gas is supplied into the space 5 from the gas discharge part 10d, and the space 5 formed by the liquid surface of the etching liquid 4 in the processing tank 1 and the inner surfaces of the lid members 6A and 6B is exposed. Pressure. If a positive pressure can be formed only by evaporation of the etching liquid 4, such supply of nitrogen gas is unnecessary.

When the wafer is unloaded, the lid members 6A and 6B are opened and the processing tank 1 is opened at the open position as in the case of loading the wafer.
After the wafers 3, ..., 3 in the etching solution 4 are taken out for each carrier 2, the lid members 6A, 6B are closed again.

It should be noted that when the opening degree of the lid members 6A and 6B is from 0 degree to 15 degrees, the inert gas injected from the second gas ejecting portion 10b and the fourth gas ejecting portion 10d for forming the inert gas atmosphere is kept. The flow rate is about 30 / min, and the lid member 6A,
When the opening of 6B is from 15 degrees to 90 degrees, the flow rate of the inert gas injected from the gas curtain forming gas discharge portion 31 for forming the gas curtain is about 150 liters / min. Also, when the wafers 3, ...
When the inert gas atmosphere is formed by the gas discharge part 10b and the fourth gas discharge part 10d, both the second gas discharge part 10b and the fourth gas discharge part 10d are combined to be about 5 liters / min. Further, in the suction unit 32, 100% is opened when forming the gas curtain, while the gas curtain formation is stopped when the wafers 3, 3, ... 10% to open so that it is 0% when the lid is in the closed position.

The flow rate of the nitrogen gas supplied from the second gas discharge portion 10b and the fourth gas discharge portion 10d may be increased proportionally as the opening degree of the lid members 6A and 6B increases. However, it is not limited to, for example, 0 to 15 degrees, 15 to 75 degrees, or 75 degrees.
The flow rate of the nitrogen gas may be increased by dividing the flow rate into three stages from 0 to 90 degrees. Alternatively, it may be divided into any two stages or four or more stages.

It is preferable that the direction of discharge of the gas discharged from each gas discharge portion should avoid direct contact with the etching liquid surface as much as possible regardless of the position of the lid member. The reason is that the gas discharged from each gas discharge portion comes into direct contact with the surface of the etching liquid, and as a result, the evaporation of the components from the etching liquid is promoted and the concentration change of the etching liquid is likely to occur.

According to the second embodiment, the lid member 6A,
When the opening 1a of the processing tank 1 is opened and closed by 6B and when the opening 1a is opened, the gas discharge parts 10a, 10b, 10c, 10
By supplying an inert gas from d and 31 to form an inert gas atmosphere and forming a gas curtain 27 of the inert gas that covers the vicinity of the surface of the etching liquid in the processing tank, It is possible to prevent the gas outside the processing tank from coming into contact with the surface of the etching liquid 4, and even when the lid member is opened or closed, the etching liquid 4 in the processing tank is evaporated or moisture in the gas outside the processing tank is absorbed. Can be prevented, a change in etching rate can be minimized, and a stable etching rate can be maintained. At the same time, it is possible to prevent the surface of the etching solution 4 in the processing tank 1 from coming into contact with the gas outside the processing tank, so that the evaporation component of the etching solution 4, for example, the etching solution of BHF is fluorinated. The evaporation of ammonium can be suppressed, the concentration change of the etching liquid can be suppressed, and the deterioration can be suppressed. In particular, when the lid members 6A and 6B are located at the open position, the gas curtain forming gas discharge part 31 and the gas suction part 32 provided in the portion of the processing tank 1 facing the space 5 are provided inside the processing tank 1. Along the surface of the etching liquid 4 and the first
Since the gas curtain 27 of the inert gas is formed at a position closer to the liquid surface than in the case of the embodiment to cover the liquid surface, the gas outside the processing bath cannot contact the etching liquid 4 and the lid is closed. Even when the members 6A and 6B are in the open position, it is possible to reliably prevent the evaporation of the etching liquid 4 or the absorption of moisture in the gas outside the processing tank, and the change in the etching rate can be minimized.

Further, the lid members 6A and 6B are provided in the treatment tank 1, and the pressure inside the treatment tank 1 is made positive from the outside of the treatment tank 1 at the closed position of the lid members 6A and 6B. Of the gas does not enter the processing tank, the evaporation of the etching liquid 4 in the processing tank or the absorption of moisture in the gas outside the processing tank can be prevented, and the change in the etching rate can be minimized. A stable etching rate can be maintained.

(Third Embodiment) Further, as an etching processing apparatus according to the third embodiment of the present invention,
By combining the embodiment and the second embodiment, as shown in FIG. 10, a gas curtain forming gas discharge portion 31 including a plurality of rectangular nozzles is provided in a portion corresponding to the space 5 in the upper portion of the processing tank 1. At the same time, the gas suction unit 13 is arranged on the lid member 6B, and the gas curtain 27 formed by being discharged from the gas curtain forming gas discharge unit 31 is sucked by the gas suction unit 13 and the first gas discharge unit 10a is set. It may be omitted. Lid member 6 in the third embodiment
The relationship between the opening / closing operation of A and 6B and the gas supply operation is basically the same as that of the first embodiment, and the same operational effect as that of the first embodiment can be obtained.

(Fourth Embodiment) FIG. 1 shows an etching processing apparatus according to a fourth embodiment of the present invention.
As shown in FIGS. 1 to 13, the opening 1a of the processing tank 1 is not limited to the one that is directly opened and closed by the lid members 6A and 6B. That is, the rectangular frame body 50 is fixed on the opening 1a of the processing tank 1, and the opening 1a of the processing tank 1 is covered by the lid members 6A and 6B.
Therefore, the opening 50a of the rectangular frame body 50 may be opened and closed. The rectangular frame body 50 expands the space 5 of the processing tank 1 and is provided with a gas discharge portion 52 for forming a gas curtain, which is composed of a plurality of rectangular nozzles to which a nitrogen gas supply passage 53 is connected. A gas suction portion 54 having a rectangular suction port facing the gas discharge portion 52 and connected to the gas discharge passage 55 is provided. According to the fourth embodiment, the lid members 6A, 6B, the gas curtain forming gas discharge portion 52, and the gas suction portion are provided on the opening 1a of the processing tank 1 without any special processing for the processing tank 1. By simply fixing the rectangular frame body 50 having the portion 54, the conventional open type processing tank can be easily improved to the lid opening / closing type processing tank 1 according to the present embodiment. Reference numeral 56 is an overflow opening provided in the processing tank 1, and reference numeral 51 is an overflow discharge path for discharging the etching solution overflowing from the overflow opening 56. Furthermore, in this 4th Embodiment, the 1st gas discharge part 10a and the 3rd gas discharge part 10c are abbreviate | omitted for simplification.

An etching processing method performed by the etching processing apparatus of the fourth embodiment will be described.

As shown in FIG. 11, the lid members 6A, 6
When the opening 1a of the processing tank 1 is closed by B (when the opening degree of the lid members 6A and 6B is 0 degree), the surface of the etching solution 4 in the processing tank 1 and the lid member 6 are closed.
The space 5 formed by the inner surfaces of A and 6B has a positive pressure (for example, 1
0 to 20 Pa). To create this positive pressure,
A small amount of nitrogen gas may be supplied into the space 5 from the second gas discharge unit 10b and the fourth gas discharge unit 10d. If a positive pressure can be formed only by evaporation of the etching liquid 4, such supply of nitrogen gas is unnecessary.

Then, as shown in FIG. 12, the lid member 6
The hinges 8 and 8 start opening from the closed position toward the open position in synchronization with A and 6B. Before moving the lid members 6A and 6B from the closed position to the open position, nitrogen gas is at least engaged from the second gas discharge portion 10b and the fourth gas discharge portion 10d in the vicinity of the engagement end portions 11, respectively. When it is supplied toward the end 11 side, the engagement of the engaging ends 11, 11 of the lid members 6A, 6B is released, and a gap 28 begins to be formed between the engaging ends 11, 11, the processing tank A nitrogen gas flow is formed so that the nitrogen gas is discharged from the space 5 of 1 toward the outside of the processing tank. By this nitrogen gas flow, the engaging ends 1 of the lid members 6A and 6B are
The engagement of 1 and 11 is released to prevent outside air such as moisture from entering from the outside of the processing tank toward the inside of the processing tank. As described above, the nitrogen gas is supplied from the second gas discharge portion 10b and the fourth gas discharge portion 10d toward the respective engagement end portions 11 side at least when the lid members 6A and 6B are at the closed position, that is, from 0 degree. Supply continues throughout the 90 ° open position.

On the other hand, when the lid members 6A and 6B start to open from the closed position and open, for example, about 15 degrees (a state as shown in FIG. 12), the inert gas is discharged in a planar form from the gas curtain forming gas discharge portion 52. At the same time, the blower 24 is driven to be sucked by the gas suction unit 54, and the formation of a planar inert gas gas curtain 27 that covers the liquid surface of the etching liquid 4 in the processing tank 1 is started. At this time, the second gas discharge unit 1
0b and the fourth gas discharge part 10d continue to supply the nitrogen gas to form a nitrogen gas atmosphere near the engaging ends 11, 11 of the lid members 6A, 6B.

Further, when the lid members 6A, 6B start to open from the closed position and are opened by, for example, about 75 degrees (the lid members 6A, 6B).
B is located at an intermediate open position between FIG. 12 and FIG. 13), the second gas discharge portion 10b and the fourth gas discharge portion 10d.
In addition to the nitrogen gas being supplied toward the respective engaging end portions 11 from the above, the blower 24 is driven while the above-mentioned inert gas is discharged in a plane form from the gas curtain forming gas discharge portion 52. A planar gas curtain 27 of inert gas that is sucked by the suction unit 54 and covers the liquid surface of the etching liquid 4 in the processing tank 1 is formed.

Then, as shown in FIG. 13, the lid member 6
When A and 6B are in the open position (when opened 90 degrees)
The second gas discharge part 10b and the fourth gas discharge part 10d.
From the above, a small amount of nitrogen gas is supplied toward the respective engaging end portions 11 side, and at the same time, the gas curtain forming gas discharge portion 52.
Of the planar inert gas that drives the blower 24 and is sucked by the gas suction portion 54 while discharging the inert gas in a planar form from the above to cover the liquid surface of the etching liquid 4 in the processing tank 1. The gas curtain 27 is formed. In this state, a small amount of nitrogen gas supplied from the second gas discharge portion 10b and the fourth gas discharge portion 10d forms a nitrogen gas atmosphere in the vicinity of the engaging ends 11, 11 of the lid members 6A, 6B. In addition to the above, on the liquid surface of the etching liquid 4 in the processing bath 1, a gas curtain 2 of a planar inert gas is formed.
By forming 7 to cover the liquid surface, the gas outside the processing tank is prevented from coming into contact with the etching liquid 4 in the processing tank 1.

Thus, with the lid members 6A, 6B in the open position, the carrier 3 containing a large number of wafers 3, ..., 3 is loaded into or unloaded from the processing bath 1.
For example, at the time of loading, the carrier 3 accommodating a large number of wafers 3, ..., 3 is placed in the processing tank 1 and the lid member 6 in the open position.
After passing between A and 6B, it is immersed in the etching solution 4 to start the etching process. Lid member 6 in open position
When passing between A and 6B, the supply of the above-mentioned inert gas from the gas discharge portion 52 for forming the gas curtain is stopped, and the suction amount by the gas suction portion 54 is greatly reduced or stopped, so that the wafers 3 ,. When the inert gas sprayed from the gas-curtain forming gas discharge part 31 comes into contact with the wafer 3, the liquid held on the surfaces of the wafers 3, ... This is to prevent uneven etching that is distributed and is caused during the etching process. A small amount of nitrogen gas supplied from the second gas discharge part 10b and the fourth gas discharge part 10d is retained on the respective surfaces of the wafers 3, ..., 3 even if they contact the wafers 3 ,. There is no effect because the amount of the liquid in it is not distributed unevenly.

Then, as soon as the wafers 3, ..., 3 are stored in the processing tank 1, the supply of the inert gas from the gas curtain forming gas discharge portion 52 and the suction by the gas suction portion 54 are restarted. The gas discharge part 5 for forming the gas curtain
The blower 24 while discharging the above-mentioned inert gas from 2 in a planar manner
Is driven to be sucked by the gas suction portion 54, and a planar inert gas gas curtain 27 that covers the liquid surface of the etching liquid 4 in the processing tank 1 is formed again.

Then, contrary to the opening operation described above, as shown in FIGS. 13 to 12, the lid members 6A and 6B are synchronized to start closing from the open position to the closed position by the hinges 8 and 8. For example, when the lid members 6A and 6B are closed from 90 degrees to 75 degrees, the blower 24 is driven and the gas suction section 54 sucks the inert gas in a planar shape from the gas curtain forming gas discharge section 52. The above processing tank 1
A planar gas curtain 27 of inert gas is formed to cover the liquid surface of the etching liquid 4 inside, and nitrogen gas is supplied from each of the second gas discharge portion 10b and the fourth gas discharge portion 10d to each engaging end portion 11. Continue to supply to the side.

Then, as shown in FIGS. 13 to 12,
When the lid members 6A and 6B are closed in synchronization with the lid members 6A and 6B from the open position to the closed position, for example, from 75 degrees to 15 degrees, the inert gas from the gas curtain forming gas discharge portion 52 is discharged. However, the nitrogen gas is supplied from the second gas discharge part 10b and the fourth gas discharge part 10d, the lid member 6A,
The nitrogen gas atmosphere is continuously formed in the vicinity of the engaging ends 11 of 11B.

Then, as shown in FIGS. 12 to 11,
Synchronizing the lid members 6A and 6B from the open position to the closed position, for example, from the closed position of 15 degrees to 0 degrees, the lid members 6A,
When 6B is closed, the supply of the inert gas from the gas curtain forming gas discharge portion 52 and the suction by the gas suction portion 54 are stopped, and the nitrogen gas from the second gas discharge portion 10b and the fourth gas discharge portion 10d is stopped. A nitrogen gas atmosphere is formed in the vicinity of the engaging ends 11, 11 of the lid members 6A, 6B only by supplying the above.

Thereafter, as shown in FIG. 11, the lid member 6
When A and 6B are closed, a small amount of nitrogen gas is supplied from the second gas discharge part 10b and the fourth gas discharge part 10d to the space 5 described above.
The space 5 formed by the liquid surface of the etching liquid 4 in the processing tank 1 and the inner surfaces of the lid members 6A and 6B is positively pressurized. If a positive pressure can be formed only by evaporation of the etching liquid 4, such supply of nitrogen gas is unnecessary.

When the wafer is unloaded, the lid members 6A and 6B are opened and the processing tank 1 is opened at the open position as in the case of loading the wafer.
After the wafers 3, ..., 3 in the etching solution 4 are taken out for each carrier 2, the lid members 6A, 6B are closed again.

It should be noted that when the opening degree of the lid members 6A and 6B is from 0 degree to 15 degrees, the inert gas injected from the second gas ejecting portion 10b and the fourth gas ejecting portion 10d for forming the inert gas atmosphere is kept. The flow rate is about 30 / min, and the lid member 6A,
When the opening of 6B is from 15 degrees to 90 degrees, the flow rate of the inert gas ejected from the gas curtain forming gas discharge portion 52 for forming the gas curtain is about 150 liters / min. Also, when the wafers 3, ...
When the inert gas atmosphere is formed by the gas discharge part 10b and the fourth gas discharge part 10d, both the second gas discharge part 10b and the fourth gas discharge part 10d are combined to be about 5 liters / min. Further, in the suction unit 54, 100% of the opening area is 0% or 5 of the opening area in order to stop the gas curtain formation when the wafers 3, 3, ... 10% to 10% so that it is open, and 0% when the lid is in the closed position.

According to the fourth embodiment, the opening 1 of the processing tank 1 is processed without any special processing.
By simply fixing the rectangular frame 50 having the lid members 6A and 6B, the gas curtain forming gas discharge portion 52, and the gas suction portion 54 on the a, the conventional open type processing tank according to the present embodiment is covered. The open / close type processing tank 1 can be easily improved. The relationship between the opening / closing operation of the lid members 6A and 6B and the gas supply operation in the fourth embodiment is basically the same as that of the first embodiment, and the same operational effect as that of the first embodiment can be obtained. .

(Fifth Embodiment) FIG. 1 shows an etching processing apparatus according to a fifth embodiment of the present invention.
As shown in FIGS. 4 to 15, in the processing apparatus of the fourth embodiment, the lid may be formed of one plate-shaped lid member 6C instead of the two lid members 6A and 6B. Good. That is, the base end of one plate-shaped lid member 6C is opened and closed with respect to the processing tank 1 by the hinge 8, and is opposed to the end of the lid member 6C on the side opposite to the base end.
The bracket 60 is erected on the processing tank 1, and the second gas discharge part 10b is arranged on the bracket 60. Therefore, the second gas discharge portion 10b provided on the bracket 60 of the processing tank 1
By injecting nitrogen gas from the fourth gas discharge portion 10d of the lid member 6C, a gas atmosphere is formed in the opening 1a portion of the processing tank 1 opened by the lid member 6C.

According to the fifth embodiment, the opening 1 of the processing tank 1 is processed without any special processing.
The lid member 6C and the gas discharge portion 5 for forming the gas curtain are provided on the a.
The conventional open type processing tank can be easily improved to the lid opening / closing type processing tank 1 according to the present embodiment only by fixing the rectangular frame 50 having the 2 and the gas suction portion 54. Further, since the lid is composed of one lid member 6C, it can be made simpler. The relationship between the opening / closing operation of the lid member 6C and the gas supply operation in the fifth embodiment is basically the same as that of the first embodiment, and the same operational effect as that of the first embodiment can be obtained.

(Sixth Embodiment) FIG. 1 shows an etching processing apparatus according to a sixth embodiment of the present invention.
As shown in FIGS. 6 to 18, the lid members 6A and 6B are not limited to be opened and closed via the hinges 8 and 8, but may be opened and closed by a slide method. That is, the lid member 6 is opened through the opening 1a of the processing apparatus of FIG. 11 according to the fourth embodiment by driving a driving apparatus such as an air cylinder or a motor.
D and 6E are in the closed position of FIG. 16 in which the engaging ends 11 and 11 engage with each other, and the lid members 6D and 6E are in the engaging end 1.
In the direction in which 1 and 11 are separated from each other (in FIG. 18, the lid member 6A is in the left direction and the lid member 6B is in the right direction), along the lateral direction, for example, along the substantially horizontal direction, between the open position in FIG. It may be opened and closed. At the engaging end portions 11 and 11 of the lid members 6D and 6E, the second gas ejecting portion 61b and the fourth gas ejecting portion 61b and the fourth gas ejecting portion 61b, which face each other so as to correspond to the second gas ejecting portion 10b and the fourth gas ejecting portion 10d, respectively. Gas discharge part 61d
Is arranged so that the nitrogen gas can be ejected from the gas discharge portions 61b and 61d toward the engaging ends 11 and 11 of the lid members 6D and 6E.

An etching processing method performed by the etching processing apparatus of the sixth embodiment will be described.

As shown in FIG. 16, the lid members 6D, 6 are
When the opening 1a of the processing tank 1 is closed by E, the space 5 formed by the liquid surface of the etching solution 4 in the processing tank 1 and the inner surfaces of the lid members 6D and 6E is positive pressure ( For example, about 10 to 20 Pa). In order to form this positive pressure, the second gas discharge part 61b and the fourth gas discharge part 6 are formed.
A small amount of nitrogen gas may be supplied from 1d into the processing tank 1 and the space 5 in the rectangular frame 50. If a positive pressure can be formed only by evaporation of the etching liquid 4, such supply of nitrogen gas is unnecessary.

Then, as shown in FIG. 17, the lid member 6
Synchronize D and 6E and start moving left and right from the closed position to the open position. Before moving the lid members 6D and 6E from the closed position to the open position, nitrogen gas is at least engaged from the second gas discharge portion 61b and the fourth gas discharge portion 61d in the vicinity of the engagement end portions 11, respectively. When it is supplied toward the end portion 11 side, the engagement of the engagement end portions 11 and 11 of the lid members 6D and 6E is released, and a gap 68 starts to be formed between the engagement end portions 11 and 11, the rectangular frame is formed. A nitrogen gas flow is formed so that the nitrogen gas is discharged from the space 5 of the body 50 to the outside of the processing tank.
This nitrogen gas flow causes the engaging ends 1 of the lid members 6D and 6E.
The engagement of 1 and 11 is released to prevent outside air such as moisture from entering from the outside of the processing tank toward the inside of the processing tank. As described above, the nitrogen gas is supplied from the second gas discharge portion 61b and the fourth gas discharge portion 61d toward the respective engagement end portions 11 side at least from the closed position to the open position of the lid members 6D and 6E. Will continue to be supplied during all of the period.

On the other hand, when the lid members 6D and 6E start to open from the closed position and are opened, for example, about half (state as shown in FIG. 17), the inert gas is ejected from the gas curtain forming gas ejection portion 52 in a planar manner. The blower 24 is driven to be sucked by the gas suction portion 54, and the formation of a planar inert gas gas curtain 27 that covers the liquid surface of the etching liquid 4 in the processing tank 1 is started. At this time, the second gas discharge part 6
Nitrogen gas is continuously supplied from the 1b and the fourth gas discharge part 61d to form a nitrogen gas atmosphere near the engaging ends 11 of the lid members 6D and 6E.

Further, when the lid members 6D, 6E start to open from the closed position and are opened by, for example, about three quarters (the lid members 6D,
6E is located at an intermediate open position between FIG. 17 and FIG. 18), the second gas discharge portion 61b and the fourth gas discharge portion 61
In addition to the nitrogen gas being supplied from d and toward each engagement end 11 side, the blower 24 is driven while the above-mentioned inert gas is discharged from the gas curtain forming gas discharge portion 52 in a planar manner. A planar gas curtain 27 of inert gas that is sucked by the gas suction unit 54 and covers the liquid surface of the etching liquid 4 in the processing tank 1 is formed.

Then, as shown in FIG. 18, the lid member 6
When D and 6E are located at the open position, a small amount of nitrogen gas is supplied from the second gas discharge portion 61b and the fourth gas discharge portion 61d toward the respective engaging end portions 11 side, and the gas curtain is formed. The blower 24 is driven while the above-mentioned inert gas is discharged in a plane form from the gas discharge part 52 for gas suction part 5
A gas curtain 2 of a planar inert gas that is sucked by 4 and covers the liquid surface of the etching liquid 4 in the processing tank 1.
Form 7. In this state, a small amount of nitrogen gas supplied from the second gas discharge portion 61b and the fourth gas discharge portion 61d forms a nitrogen gas atmosphere near the engaging ends 11 of the lid members 6D and 6E. As well as
A gas curtain 27 of a planar inert gas is formed on the liquid surface of the etching liquid 4 in the processing bath 1 to cover the liquid surface, so that the gas outside the processing bath is exposed to the gas outside the processing bath 1.
The etching solution 4 inside is prevented from contacting.

In this way, with the lid members 6D, 6E in the open position, the carrier 3 containing a large number of wafers 3, ..., 3 is carried in or out of the processing bath 1.
For example, at the time of loading, the carrier 3 accommodating a large number of wafers 3, ..., 3 is placed in the processing tank 1 and the lid member 6 in the open position.
After passing between D and 6E, it is immersed in the etching liquid 4 to start the etching process. Lid member 6 in open position
When passing between D and 6E, the supply of the above-mentioned inert gas from the gas curtain forming gas discharge part 52 is stopped, and the suction amount by the gas suction part 54 is greatly reduced or stopped, so that the wafers 3 ,. When the inert gas sprayed from the gas-curtain forming gas discharge part 31 comes into contact with the wafer 3, the liquid held on each surface of the wafers 3, ... This is to prevent uneven etching that is distributed and is caused during the etching process. A small amount of nitrogen gas supplied from the second gas discharge part 61b and the fourth gas discharge part 61d is retained on the respective surfaces of the wafers 3, ..., 3 even when they contact the wafers 3 ,. There is no effect because the amount of the liquid in it is not distributed unevenly.

Next, when the wafers 3, ... The gas discharge part 5 for forming the gas curtain
The blower 24 while discharging the above-mentioned inert gas from 2 in a planar manner
Is driven to be sucked by the gas suction portion 54, and a planar inert gas gas curtain 27 that covers the liquid surface of the etching liquid 4 in the processing tank 1 is formed again.

Then, contrary to the above-mentioned opening operation, as shown in FIGS. 18 to 17, the lid members 6D and 6E start to close in synchronization with each other from the open position to the closed position. For example, when the lid members 6D and 6E are closed from the open position to about 1/4, the blower 24 is driven while the above-mentioned inert gas is discharged from the gas curtain forming gas discharge portion 52 in a planar manner to drive the gas suction portion. A gas curtain 27 of a planar inert gas which is sucked by 54 and covers the liquid surface of the etching liquid 4 in the processing tank 1 is formed, and the second gas discharge portion 61b and the fourth gas discharge portion 61d are formed. Nitrogen gas from each engaging end 11
Continue to supply to the side.

Then, as shown in FIGS. 18 to 17,
Synchronizing the lid members 6D and 6E from the open position to the closed position, for example, from about 1/4 to about half, the lid member 6
When D and 6E are closed, the supply of the above-mentioned inert gas from the gas discharge portion 52 for forming the gas curtain and the gas suction portion 54.
However, by supplying nitrogen gas from the second gas discharge portion 61b and the fourth gas discharge portion 61d, a nitrogen gas atmosphere is formed in the vicinity of the engaging ends 11, 11 of the lid members 6D, 6E. to continue.

Then, as shown in FIGS. 17 to 16,
The lid members 6D and 6E are synchronously directed from the open position to the closed position, for example, from about half the open position to the closed position.
When D and 6E are closed, the supply of the above-mentioned inert gas from the gas discharge portion 52 for forming the gas curtain and the gas suction portion 54.
Suction by the second gas discharge part 61b and the fourth gas discharge part 61b.
Only by supplying the nitrogen gas from the gas discharge part 61d, a nitrogen gas atmosphere is formed in the vicinity of the engaging ends 11, 11 of the lid members 6D, 6E.

Thereafter, as shown in FIG. 16, the lid member 6
When D and 6E are closed, a small amount of nitrogen gas is discharged from the second gas discharge portion 61b and the fourth gas discharge portion 61d into the space 5 described above.
The space 5 formed by the liquid surface of the etching liquid 4 in the processing tank 1 and the inner surfaces of the lid members 6D and 6E is positively pressurized. If a positive pressure can be formed only by evaporation of the etching liquid 4, such supply of nitrogen gas is unnecessary.

Further, when the wafer is unloaded, the lid members 6D and 6E are opened and the processing tank 1 is opened at the open position as in the case of loading the wafer.
After the wafers 3, ..., 3 in the etching liquid 4 are taken out for each carrier 2, the lid members 6D, 6E are closed again.

Note that when the opening degree of the lid members 6D and 6E is from 0 degree to 15 degrees, the inert gas injected from the second gas discharge portion 61b and the fourth gas discharge portion 61d for forming the inert gas atmosphere is not changed. The flow rate is set to about 30 / min, the lid member 6D,
When the opening degree of 6E is from 15 degrees to 90 degrees, the flow rate of the inert gas injected from the gas curtain forming gas discharge portion 52 for forming the gas curtain is about 150 liters / min. Also, when the wafers 3, ...
When the inert gas atmosphere is formed by the gas discharge portion 61b and the fourth gas discharge portion 61d, both the second gas discharge portion 61b and the fourth gas discharge portion 61d are combined to be about 5 liters / min. Further, in the suction unit 54, 100% of the opening area is 0% or 5 of the opening area in order to stop the gas curtain formation when the wafers 3, 3, ... 10% to 10% so that it is open, and 0% when the lid is in the closed position.

According to the sixth embodiment, the opening 1 of the processing tank 1 is processed without any special processing.
By simply disposing the rectangular frame body 50 having the lid members 6D and 6E, the gas curtain forming gas discharge portion 52, and the gas suction portion 54 on the a, the conventional open type processing tank according to the present embodiment is covered. The open / close type processing tank 1 can be easily improved.

When the opening 1a of the processing tank 1 is opened and closed by the lid members 6D and 6E, and when the opening 1a is opened, an inert gas is supplied from the gas discharge parts 52, 10b and 10d to form an inert gas atmosphere. A gas curtain 2 of an inert gas that covers the vicinity of the surface of the etching solution in the processing tank
By forming 7, the etching liquid 4 in the processing bath 1
It is possible to prevent the gas outside the processing bath from coming into contact with the surface of the processing tank, and prevent evaporation of the etching solution 4 in the processing bath or absorption of moisture in the gas outside the processing bath even when the lid member is opened and closed. Therefore, the change of the etching rate can be suppressed to the minimum, and the stable etching rate can be maintained. In particular, when the lid members 6D and 6E are located at the open position, the surface of the etching solution 4 in the processing tank 1 is covered with the gas curtain 27 of the inert gas,
The gas outside the processing bath cannot contact the etching liquid 4, and the evaporation of the etching liquid 4 or the absorption of moisture in the gas outside the processing bath can be reliably prevented even in the open position of the lid members 6D and 6E. The change in etching rate can be minimized.

Further, by providing the lid members 6D and 6E on the treatment tank 1 and making the pressure inside the treatment tank 1 positive from the outside of the treatment tank 1 at the closed position of the lid members 6D and 6E, the outside of the treatment tank 1 Of the gas does not enter the processing tank, the evaporation of the etching liquid 4 in the processing tank or the absorption of moisture in the gas outside the processing tank can be prevented, and the change in the etching rate can be minimized. A stable etching rate can be maintained.

(Seventh Embodiment) Further, as an etching processing apparatus according to the seventh embodiment of the present invention, FIG.
As shown in FIGS. 9 to 21, in the processing apparatus of the sixth embodiment, the lid may be formed of one plate-shaped lid member 6F instead of the two lid members 6D and 6E. Good. That is, one plate-shaped lid member 6F is slid with respect to the processing tank 1 to be opened and closed, and the lid member 6
Gas discharge parts 61e of, for example, four nozzles corresponding to the fourth gas discharge part 61d are arranged on the inner surface of the open / close end of F, and a nitrogen gas supply passage 62e is connected to the gas discharge part 61e. On the other hand, the gas discharge parts 61f of, for example, four nozzles corresponding to the second gas discharge part 61b are connected to the gas discharge part 6
1e is arranged on the inner surface of the rectangular frame 50 so as not to interfere with each other and to be positioned alternately.
The nitrogen gas supply path 62f may be connected to the. The relationship between the opening / closing operation of the lid member 6F and the gas supply operation in the seventh embodiment is basically the same as in the sixth embodiment, and the same operational effect as in the sixth embodiment can be obtained.

(Eighth Embodiment) FIG. 2 shows an etching processing apparatus according to the eighth embodiment of the present invention.
As shown in FIGS. 3 to 24, in order to adjust the concentration change due to the deterioration of the etching solution associated with the etching process, a circulation path for the etching solution (reference numeral 1 described below is provided in the processing tank.
b, 1c, 94, 93, 95, 96, etc.), and the etching solution having the same components as the etching solution used for the etching process is replenished through the replenishing path (reference numerals 90, 91, 92 described below). It may be supplied into the circulation path for use, mixed with the circulating etching solution, and then returned to the processing tank again.

That is, the processing bath 1 is replaced with the inner processing bath main body 1
b, and the outer processing bath 1c that houses the inner processing bath main body 1b therein, and receives the etching solution 4a overflowing from the inner processing bath main body 1b into the outer processing bath 1c. Then, the etching liquid 4a overflowed from the inner processing bath main body 1b and received in the outer processing bath 1c.
From the bottom of the outer processing tank 1c to the etching solution circulation path 93
Through the filter 94 for removing dirt in the liquid by the circulation pump 94, and the inner processing tank main body 1b.
It is supplied to the etching liquid 4 in the inner processing bath main body 1b from the circulating liquid supply unit 96 arranged at the bottom of the. In this way, the circulation path of the etching solution 4 is constructed. On the other hand, the concentration of the etching liquid 4 in the inner processing tank body 1b is measured by the concentration measuring device 97.
Based on the measurement result, by driving the metering pump 91, the etching solution, which is a chemical solution, is supplied from the inner processing tank main body 1b to the outer processing tank 1c through the etching solution replenishment passage 90 by the replenishment supply nozzle 92. It is replenished to the overflowing portion or the outer processing tank 1c. As shown in FIGS. 24A and 24B, the replenishment supply nozzle 92
Is located at a position where the dimension t (for example, a few millimeters) is inserted from the edge of the inner processing bath main body 1b to the inside of the inner processing bath main body 1b, or the bottom of the inner processing bath main body 1b is circulated from the position. It can be provided at an arbitrary position within the circulation path of the etchant liquid in the range up to the liquid supply portion 96.

According to the above construction, when the concentration of the etching liquid changes due to the deterioration of the etching liquid caused by the etching process, the concentration of the etching liquid 4 in the inner processing tank main body 1b measured by the concentration measuring device 97 is measured. Is out of the permissible range, the amount of the etching solution to be replenished is calculated by the arithmetic unit in the control device 19, and the metering pump 91 is driven by the replenishment amount based on the calculation result, and the amount is passed through the etching solution replenishing path 90. The etching liquid, which is a chemical liquid, is supplied from the inner processing tank main body 1b to the outer processing tank 1 by the replenishment supply nozzle 92.
It is replenished to the portion overflowing to c or the outer processing tank 1c.

According to the eighth embodiment, even if the concentration of the etching liquid changes due to the deterioration of the etching liquid caused by the etching process, the concentration can be restored within the predetermined concentration range by supplementing the etching liquid. Therefore, the deterioration of the etching solution can be delayed. Therefore, the etching treatment apparatus according to the first to seventh embodiments can prevent the gas outside the treatment tank from coming into contact with the etching liquid and prevent the etching liquid from deteriorating due to moisture absorption or evaporation of components in the etching liquid. By delaying the deterioration of the etching liquid due to the etching process by the liquid replenishing operation, the life of the etching liquid can be extended and the etching process efficiency can be further improved.

In each of the above embodiments, the suction operation by the suction unit may stop the driving of the blower except when the gas curtain is being formed. If it is desired not to disturb the gas unnecessarily, the suction force may be significantly reduced except when the gas curtain is being formed.

By properly combining the arbitrary embodiments of the aforementioned various embodiments, the effects possessed by them can be produced.

[0126]

According to the present invention, when the opening of the processing tank is opened by the lid, an inert gas is supplied to form an inert gas atmosphere, or near the liquid surface of the etching solution in the processing tank. Forming a gas curtain of an inert gas to cover the processing tank, or by forming an inert gas atmosphere and forming a gas curtain of an inert gas covering the vicinity of the liquid surface of the etching solution in the processing tank, It is possible to prevent the gas outside the processing bath from coming into contact with the surface of the etching liquid inside, and to prevent the evaporation of the etching liquid inside the processing bath or the absorption of moisture in the gas outside the processing bath. As a result, the change in etching rate can be minimized, and a stable etching rate can be maintained. Furthermore, by maintaining this state even when the lid is opened and closed, it is possible to prevent the gas outside the processing bath from trying to come into contact with the surface of the etching liquid in the processing bath. Evaporation or moisture absorption in the gas outside the processing tank can be prevented, the change in etching rate can be minimized, and a stable etching rate can be maintained.

In particular, when the lid is in the open position, the gas outside the processing bath may come into contact with the etching liquid by covering the surface of the etching liquid in the processing bath with a gas curtain of an inert gas. It is not possible to prevent the evaporation of the etching solution or the absorption of moisture in the gas outside the processing tank even at the open position of the lid, and the change in the etching rate can be minimized.

Further, by making the pressure inside the processing tank positive from the outside of the processing tank at the closed position of the lid, the gas outside the processing tank does not enter the processing tank and the etching solution in the processing tank evaporates or It is possible to prevent moisture in the gas outside the processing tank from being absorbed, change the etching rate to a minimum, and maintain a stable etching rate.

Further, a rectangular frame having a lid, a gas curtain forming gas discharge part, and a gas suction part is arranged on the opening of the processing tank without any special processing for the processing tank. The conventional open type processing tank can be easily improved to the lid opening / closing type processing tank according to the present invention.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of an etching processing apparatus according to a first embodiment of the present invention with a lid in a closed position. In addition, in each of the following drawings, the processing tank is illustrated in a transparent manner.

FIG. 2 is a view in which the lid starts to open from a closed position.
3 is an explanatory view of the etching processing apparatus of FIG.

FIG. 3 is an explanatory view of the etching processing apparatus of FIG. 1 with the lid in an open position.

FIG. 4 is an explanatory diagram showing a piping system of the etching processing apparatus of FIG.

5 is a perspective explanatory view of a lid in the closed position of the etching processing apparatus of FIG. 1. FIG.

FIG. 6 is an explanatory diagram of an etching processing apparatus according to a second embodiment of the present invention with a lid in a closed position.

FIG. 7 is a view in which the lid starts to open from the closed position.
3 is an explanatory view of the etching processing apparatus of FIG.

8 is an explanatory view of the etching processing apparatus of FIG. 6 with the lid in an open position.

9 is an explanatory view showing a piping system of the etching processing apparatus of FIG.

FIG. 10 is an explanatory diagram of the etching processing apparatus according to the third embodiment of the present invention with the lid in the open position.

FIG. 11 is an explanatory diagram of an etching processing apparatus according to a fourth embodiment of the present invention with a lid in a closed position.

FIG. 12 is an explanatory diagram of the etching processing apparatus of FIG. 11 in a state where the lid starts to open from the closed position.

FIG. 13 is an explanatory diagram of the etching processing apparatus of FIG. 11 when the lid is in the open position.

FIG. 14 is an explanatory diagram of an etching processing apparatus according to a fifth embodiment of the present invention with a lid in a closed position.

FIG. 15 is an explanatory diagram of the etching processing apparatus of FIG. 14 when the lid is in the open position.

FIG. 16 is an explanatory diagram of an etching processing apparatus according to a sixth embodiment of the present invention with a lid in a closed position.

17 is an explanatory diagram of the etching processing apparatus of FIG. 16 in a state where the lid starts to open from the closed position.

FIG. 18 is an explanatory diagram of the etching processing apparatus of FIG. 16 when the lid is in the open position.

FIG. 19 is an explanatory diagram of an etching processing apparatus according to a seventh embodiment of the present invention with a lid in a closed position.

FIG. 20 is an explanatory diagram of the arrangement state of nozzles of the etching processing apparatus of FIG.

21 is an explanatory diagram of the etching processing apparatus of FIG. 19 in a state where the lid starts to open from the closed position.

22 is an explanatory view of the etching processing apparatus of FIG. 19 when the lid is in the open position.

FIG. 23 is an explanatory diagram of an etching processing apparatus according to an eighth embodiment of the present invention with a lid in a closed position.

24 (A) and (B) are partially enlarged explanatory views of the etching processing apparatus of FIG. 23.

FIG. 25 is an explanatory diagram showing an example of the operation timing of each of the ejection unit and the suction unit in the first embodiment.

[Explanation of symbols]

1 ... Processing tank, 1a ... Opening, 1b ... Inner processing tank main body, 1c
... Outer processing tank, 2 ... Carrier, 3 ... Wafer, 4 ... Etching solution, 5 ... Space, 6A, 6B, 6C, 6D, 6E, 6
F ... Lid member, 7 ... Discharge path, 10a ... First gas discharge part, 1
0b ... 2nd gas discharge part, 10c ... 3rd gas discharge part, 10
d ... 4th gas discharge part, 12a, 12b, 12c, 12d
... Nitrogen gas supply passage, 13 ... Gas suction portion, 14 ... Gas discharge passage, 15 ... Nitrogen gas adjusting valve, 16 ... Nitrogen gas supplying flow meter, 17 ... Nitrogen gas supplying flow adjusting valve, 18 ... Nitrogen gas supplying Open / close valve, 19 ... Control device, 20 ... Pressure measuring device, 2
1 ... Etching solution discharge on-off valve, 22 ... Gas discharge flow rate adjusting valve, 23 ... Gas discharge on-off valve, 24 ... Blower, 2
5 ... Supply path, 26 ... Supply path, 27 ... Gas curtain, 28
... Gap, 31 ... Gas discharge part for forming gas curtain, 32 ...
Gas suction part, 33 ... Nitrogen gas supply path, 34 ... Gas discharge path, 37 ... Nitrogen gas supply flow rate adjusting valve, 38 ... Nitrogen gas supply opening / closing valve, 39 ... Supply path, 40 ... Supply path, 50 ... Rectangular frame Body, 50a ... Opening, 51 ... Overflow discharge path, 52 ... Gas curtain forming gas discharge section, 53 ... Nitrogen gas supply path, 54 ... Gas suction section, 55 ... Gas discharge path, 5
6 ... Overflow opening, 60 ... Bracket, 61b
... second gas discharge part, 61d ... fourth gas discharge part, 68 ... gap, 90 ... etching liquid replenishing passage, 91 ... metering pump, 9
2 ... Replenishment supply nozzle, 93 ... Etching solution circulation path, 94
... Circulation pump, 95 ... Filter, 96 ... Circulating fluid supply unit,
97 ... Concentration measuring instrument.

─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP 2000-5709 (JP, A) JP 2000-5710 (JP, A) JP 11-274133 (JP, A) JP 7-221066 ( (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/304-21/3063, 21/308 C23F 1/00-1/44 B08B 3/00-3/12

Claims (19)

(57) [Claims] 1. A wafer (3) with an etching liquid (4)
An etching processing apparatus for etching a processing tank (1) having a wafer loading / unloading opening (1a) for holding the etching solution, a closed position for closing the opening of the processing tank, and an open position for opening the opening. Lids (6A, 6B, 6C, 6 that move between
D, 6E, 6F) and the inside of the processing tank by forming a gas curtain of an inert gas that covers the vicinity of the surface of the etching solution in the processing tank when the opening of the processing tank is opened by the lid. A gas supply device for suppressing contact between the etching liquid and the gas outside the processing tank, and the lid (6A, 6B, 6C, 6D, 6E, 6F) is moved to open the opening. When the wafer is taken in and out through the opening, the inert gas is supplied by the gas supply device to form the inert gas atmosphere in the vicinity of the opening and the vicinity of the surface of the etching solution in the processing bath is covered. An etching processing apparatus, wherein formation of a gas curtain of an inert gas is stopped by the gas supply device. 2. The lid (6A, 6B, 6C, 6D, 6
(E, 6F) to open the opening, the inert gas is supplied by the gas supply device to form the inert gas atmosphere near the opening, and the solution of the etching solution in the processing bath is used. The etching processing apparatus according to claim 1, wherein a gas curtain of an inert gas that covers the vicinity of the surface is formed by the gas supply device. 3. The lid (6A, 6B, 6C, 6D, 6
(E, 6F) to open the opening, and when the opening is started, the inert gas is supplied by the gas supply device to form the inert gas atmosphere near the opening, and thereafter, The etching processing apparatus according to claim 1, wherein a gas curtain of an inert gas that covers the vicinity of the surface of the etching liquid in the processing tank is formed by the gas supply device. 4. The space (5) formed by the liquid surface of the etching liquid in the processing bath and the inner surface of the lid when the opening of the processing bath is closed by the lid is positive pressure. The etching processing apparatus according to any one of claims 1 to 3. 5. The lid has two lid members (6A, 6B), each base end portion (9) of which is rotatably supported by the processing tank, and each base end portion of each lid member. To the engaging end (1
5. The etching processing apparatus according to claim 1, wherein 1) engages with each other at the closed position of the lid to close the opening of the processing bath. 6. The lid includes two lid members (6D, 6) each of which has a base end portion (9) slidably supported in the processing tank.
E), the engaging ends (11) facing the base ends of the lid members engage with each other at the closed position of the lid to close the opening of the processing tank. The etching processing apparatus according to claim 1. 7. The gas supply device is disposed on a surface of the lid at the processing tank side of the lid in the closed position, and supplies the gas toward the engaging end portion of the lid member. Inert gas atmosphere forming gas discharge part (10b, 10c, 10d, 6) for forming an inert gas atmosphere
1b, 61d), a gas discharge portion (10a) for forming a gas curtain, which is disposed on the surface of the lid at the closed position on the side of the processing tank and discharges the gas in a planar shape, and at the closed position. Is disposed on the surface of the lid on the side of the processing tank, and the gas discharged in a planar shape from the gas curtain forming gas discharge part is sucked to the liquid surface of the etching liquid in the processing tank. And a gas suction section (13) for forming a gas curtain, and from the time when each lid member starts moving from the closed position to the open position of the lid, The gas is supplied toward the engaging end portion of the lid member to form the inert gas atmosphere, and the gas is discharged from the gas curtain forming gas discharge portion before being positioned in the open position of the lid. And then use the gas suction unit Etching apparatus according to claim 5 or 6 so as to form a gas curtain to the liquid surface of the etching liquid of the processing tank by. 8. The gas supply device is arranged on the surface of the lid at the processing tank side in the closed position, and supplies the gas toward the engaging end of the lid member. Inert gas atmosphere forming gas discharge part (10b, 10c, 10d, 6) for forming an inert gas atmosphere
1b, 61d, 61e), a gas discharge part (31, 52) for forming a gas curtain, which is arranged on the side of the processing tank and discharges the gas in a planar manner, and arranged on the side of the processing tank, and A gas suction section (32, 54) for sucking the gas discharged in a plane from the gas curtain forming gas discharge section to form a gas curtain on the liquid surface of the etching solution in the processing bath. From the time when each lid member starts moving from the closed position of the lid to the open position, the gas is directed from the inert gas atmosphere forming gas discharge portion toward the engaging end portion of the lid member. The treatment tank by supplying the gas to form the inert gas atmosphere and discharging the gas from the gas curtain forming gas discharge unit and sucking the gas in the gas suction unit before being positioned at the open position of the lid. Etching solution in Etching apparatus according to claim 5 or 6 so as to form a gas curtain to the liquid surface. 9. A circulation path (1b, 1c, 94, 93, 95, 9) for circulating and supplying the etching liquid in the processing bath.
6), a concentration measuring device (97) for measuring the concentration of the etching solution in the processing tank, and a replenishing path (90, 91, 92) for replenishing the circulation path with an etching solution having the same composition as the etching solution. The etching solution of the same component as the etching solution is replenished from the replenishment path to the circulation path based on the concentration of the etching solution in the processing tank measured by the concentration measuring device. The etching processing apparatus according to any one of to 8. 10. A wafer (3) is loaded into the processing bath through the wafer loading / unloading opening (1a) of the processing bath (1) holding the etching liquid (4), and the etching liquid in the processing bath is loaded. In the etching processing method, wherein the wafer is etched by the above method, and then the wafer subjected to the etching processing is carried out of the processing tank through the wafer loading / unloading opening of the processing tank, the lid (6A, 6B, 6C, 6D, 6E, 6F) moves from the closed position to the open position to form a gas curtain of an inert gas that covers the vicinity of the surface of the etching solution in the processing bath when the opening of the processing bath is opened. The contact between the etching solution in the processing tank and the gas outside the processing tank is suppressed, and the lid (6A, 6B, 6C, 6D, 6E, 6F) is moved to open the opening. When the wafer is taken in and out through the opening in the state, the inert gas is supplied to form the inert gas atmosphere near the opening, and the inert gas that covers the vicinity of the liquid surface of the etching solution in the processing tank is formed. The etching treatment method characterized in that the formation of the gas curtain is stopped. 11. The lid (6A, 6B, 6C, 6D, 6
(E, 6F) is moved to open the opening, the inert gas is supplied to form the atmosphere of the inert gas in the vicinity of the opening, and the vicinity of the surface of the etching solution in the processing bath is not covered. The etching method according to claim 10, wherein a gas curtain of active gas is formed. 12. The lid (6A, 6B, 6C, 6D, 6
E, 6F) to open the opening, and when the opening is started, the inert gas is supplied to form the inert gas atmosphere in the vicinity of the opening, and then the above-mentioned treatment tank is opened. The etching treatment method according to claim 10, wherein a gas curtain of an inert gas that covers the vicinity of the surface of the etching liquid is formed. 13. The space (5) formed by the liquid surface of the etching liquid in the processing tank and the inner surface of the lid when the opening of the processing tank is closed by the lid is positive pressure. The etching method according to any one of claims 10 to 12. 14. Two lid members (6) constituting the lid and each base end (9) of which is rotatably supported by the processing bath.
A, 6B) is rotated to move the lid between the closed position and the open position, and when the lid is located in the open position, the inert gas is supplied to supply the treatment tank. The etching treatment method according to any one of claims 10 to 13, wherein contact between the etching liquid inside and a gas outside the treatment tank is suppressed. 15. Two lid members (6) constituting the lid and having respective base end portions (9) rotatably supported by the processing tank.
D, 6E) to move the lid between the closed position and the open position, and when the lid is located in the open position, the inert gas is supplied to supply the inert gas to the inside of the processing tank. The etching treatment method according to any one of claims 10 to 13, wherein contact between the etching solution and the gas outside the treatment tank is suppressed. 16. For forming an inert gas atmosphere, which is arranged on the surface of the lid at the processing tank side at the closed position from the time when each lid member starts to move from the closed position to the open position of the lid. Gas discharge part (10b, 10c, 10d, 61
b, 61d) to supply the gas toward the engaging end of the lid member to form the inert gas atmosphere, while each lid member is positioned in the open position of the lid, The gas is discharged in a planar manner from the gas curtain forming gas discharge part (10a) arranged on the surface of the lid at the closed position on the processing tank side, and at the same time, the lid is at the processing tank side of the lid at the closed position. By the gas suction part (13) arranged on the surface of
16. The gas curtain formed on the liquid surface of the etching liquid in the processing bath by sucking the gas discharged in a plane form from the gas discharge portion for forming the gas curtain. Etching method. 17. An inert gas atmosphere for forming an inert gas atmosphere, which is arranged on the surface of the lid at the processing tank side at the closed position from the time when each lid member starts moving from the closed position to the open position of the lid. Gas discharge part (10b, 10c, 10d, 61
b, 61d, 61e) to supply the gas toward the engaging end of the lid member to form the inert gas atmosphere, while each lid member is positioned at the open position of the lid. , A gas discharge part for gas curtain formation (3
The gas is discharged in a planar manner from the gas suction part (32, 54) disposed on the side of the processing tank, and the gas is discharged in a planar manner from the gas discharge part for forming the gas curtain. 16. The etching treatment method according to claim 14, wherein the gas curtain is sucked to form a gas curtain on the liquid surface of the etching liquid in the treatment tank. 18. The concentration of the etching liquid in the treatment tank is measured by a concentration measuring device (97), and the concentration of the etching liquid in the treatment tank is measured by the concentration measuring device. A circulation path (1b, 1c, 94, 93,
95, 96), a replenishment path (90, 9) for replenishing the circulation path with an etching solution having the same composition as the etching solution.
The etching treatment method according to any one of claims 10 to 17, wherein an etching solution having the same composition as the etching solution is replenished from 1, 92). 19. A rectangular frame body (50) having the lid, the gas curtain forming gas discharge portion (52), and the gas suction portion (54) is arranged on the opening of the processing tank.
The etching processing apparatus according to any one of claims 1 to 6 and 8, wherein the opening (50a) of the rectangular frame body is the opening of the processing tank.