JP2001308062A - Device and method for etching treatment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device and method for etching treatment which can suppress the contact between an etchant within a treatment vessel and a gas outside the treatment vessel, and can sharply reduce the concentration change of etchant. SOLUTION: The contact between the etchant within a treatment vessel and the gas outside the treatment vessel is suppressed, by supplying inert gas to the vicinity of the opening within the treatment vessel, thereby forming a gas curtain in the inert gas atmosphere or in the vicinity of liquid level, when covers 6A, 6B, 6C, 6D, 6E, and 6F shift from close positions to open positions, to open an opening 1a of the treatment vessel 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an etching apparatus and method for etching a wafer with an etchant in the production of semiconductor devices.

[0002]

2. Description of the Related Art It is known that an etching solution used for producing semiconductor devices such as wafers is easily affected by a use environment as a characteristic of the solution. For example, it is known that the concentration of an etching solution changes due to moisture absorption.

[0003]

However, when the concentration of the etchant changes, the etching rate of the wafer with the etchant becomes non-uniform, which causes a problem that uniform etching cannot be performed.

[0004] That is, even if a wafer is etched by setting the concentration of an etching solution that matches the purpose of use in order to achieve the desired etching amount and ratio, the above-mentioned example is not limited to the deterioration of the etching solution. If the concentration of the etching solution changes due to the cause, the etching rate changes, and there is a problem that the etching solution cannot be used effectively.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to solve the above-mentioned problems, and it is possible to suppress the contact between the etching solution in the processing tank and the gas outside the processing tank, thereby greatly changing the concentration of the etching solution. It is an object of the present invention to provide an etching apparatus and method capable of reducing the number of etching processes.

[0006]

In order to achieve the above object, the present invention is configured as follows.

According to a first aspect of the present invention, there is provided an etching apparatus for etching a wafer with an etching solution, a processing tank having an opening for taking in and out the wafer and holding the etching liquid, and an opening in the processing tank. A lid that moves between a closed position that closes and an open position that opens the opening, and supplies an inert gas to the vicinity of the opening in the processing tank when the opening of the processing tank is opened by the lid. A gas supply device for forming an inert gas atmosphere to suppress contact between the etching solution in the processing tank and gas outside the processing tank.

According to a second aspect of the present invention, there is provided an etching apparatus for etching a wafer with an etching solution, a processing tank having an opening for taking in and out the wafer and holding the etching liquid, and an opening in the processing tank. A lid that moves between a closed position to close the opening and an open position to open the opening; and an inert cover that covers the vicinity of the surface of the etching liquid in the processing bath when the opening of the processing bath is opened by the lid. A gas supply device for forming a gas curtain of gas to suppress a contact between the etching solution in the processing tank and a gas outside the processing tank is provided.

According to the third aspect of the present invention, when the lid is moved and the wafer is taken in and out through the opening with the opening opened, the gas supply device supplies the inert gas to supply the inert gas. In the second mode, the formation of the gas curtain of the inert gas covering the vicinity of the surface of the etching solution in the processing tank while the inert gas atmosphere is formed near the opening is stopped by the gas supply device. An etching apparatus according to the above description is provided.

According to a fourth aspect of the present invention, when opening the opening by moving the lid, the inert gas is supplied by the gas supply device to form the inert gas atmosphere near the opening. In addition, there is provided the etching apparatus according to any one of the first to third aspects, wherein the gas supply device forms a gas curtain of an inert gas which covers the vicinity of the liquid level of the etching solution in the processing tank. I do.

According to a fifth aspect of the present invention, when the cover is moved to open the opening, when the opening is started, the inert gas is supplied by the gas supply device and the inert gas is supplied. An atmosphere is formed in the vicinity of the opening, and thereafter, a gas curtain of an inert gas that covers the vicinity of the liquid level of the etching solution in the processing tank is formed by the gas supply device. An etching treatment apparatus according to an aspect is provided.

According to a sixth aspect of the present invention, when the opening of the processing bath is closed by the lid, the surface of the etching solution in the processing bath and the inner surface of the lid are formed. The etching treatment apparatus according to any one of the first to fifth aspects, wherein the space has a positive pressure.

According to a seventh aspect of the present invention, the lid has two lid members each of which has a base end rotatably supported by the processing tank. The etching processing apparatus according to any one of the first to sixth aspects, wherein engagement ends facing each other are engaged with each other at the closed position of the lid to close the opening of the processing tank. I do.

According to an eighth aspect of the present invention, the lid has two lid members each of which has a base end slidably supported by the processing tank, and is provided at each base end of each of the lid members. The etching processing apparatus according to any one of the first to sixth aspects, wherein opposing engagement ends are engaged with each other at the closed position of the lid to close the opening of the processing tank. .

According to a ninth aspect of the present invention, the gas supply device is disposed on the processing tank side surface of the lid at the closed position, and transmits the gas to the engagement end of the lid member. An inert gas atmosphere forming gas discharge unit that supplies the gas to the processing tank side at the closed position and supplies the gas to the processing tank. And a gas discharge portion for forming a gas curtain that discharges in a shape, and the gas that is disposed on the processing tank side surface of the lid at the closed position and is discharged in a planar manner from the gas discharge portion for forming a gas curtain. And a gas suction unit that forms a gas curtain with respect to the liquid level of the etching solution in the processing bath when each lid member starts moving from the closed position of the lid to the open position. From the inert gas atmosphere forming gas discharge section The gas is supplied toward the engagement end of the lid member to form the inert gas atmosphere, and the gas is supplied from the gas discharge part for gas curtain formation before being positioned at the open position of the lid. The etching apparatus according to the seventh or eighth aspect, wherein the gas curtain is formed on the surface of the etching liquid in the processing tank by discharging and sucking the gas by the gas suction unit.

According to a tenth aspect of the present invention, the gas supply device is disposed on the processing tank side surface of the lid at the closed position, and supplies the gas to the engagement end of the lid member. A gas discharge section for forming an inert gas atmosphere by supplying the gas toward the section, and a gas discharge for forming a gas curtain which is disposed on the processing tank side and discharges the gas in a planar manner. Part, disposed on the processing tank side, and
A gas suction unit for sucking the gas discharged from the gas curtain forming gas discharge unit in a planar shape and forming a gas curtain with respect to the liquid level of the etching solution in the processing tank; When the member starts to move from the closed position to the open position of the lid, the gas is supplied from the inert gas atmosphere forming gas discharge section toward the engagement end of the lid member, and Forming an active gas atmosphere and discharging the gas from the gas discharge part for gas curtain formation and sucking the gas by the gas suction part before being positioned at the open position of the lid, thereby forming the etching solution in the processing tank. 7th or 8th to form a gas curtain with respect to the liquid level
An etching treatment apparatus according to the aspect is provided.

According to an eleventh aspect of the present invention, a circulation path for circulating and supplying the etching liquid in the processing tank, a concentration measuring device for measuring the concentration of the etching liquid in the processing tank, And a replenishment path for replenishing the component etching solution to the circulation path, based on the concentration of the etching solution in the processing tank measured by the concentration measurement device, the circulation path and the etching solution from the replenishment path to the etching solution. An etching apparatus according to any one of the first to tenth aspects, wherein an etching solution of the same component is replenished.

According to a twelfth aspect of the present invention, a wafer is carried into the above-mentioned processing tank through the wafer loading / unloading opening of the processing tank holding the etching liquid, and the above-mentioned wafer is loaded with the above-mentioned etching liquid in the above-mentioned processing tank. Performing an etching process, and then carrying out the etching-processed wafer out of the processing bath through the wafer loading / unloading opening of the processing bath, wherein the lid moves from a closed position to an open position, When the opening of the processing tank is opened, an inert gas is supplied to the vicinity of the opening in the processing tank to form an inert gas atmosphere, and the etching liquid in the processing tank and the gas outside the processing tank are connected to each other. And an etching method characterized by suppressing contact of the substrate.

According to a thirteenth aspect of the present invention, a wafer is carried into the above-mentioned processing tank through the wafer loading / unloading opening of the processing tank holding the etching liquid, and the above-mentioned wafer is loaded with the above-mentioned etching liquid in the above-mentioned processing tank. Performing an etching process, and then carrying out the etching-processed wafer out of the processing bath through the wafer loading / unloading opening of the processing bath, wherein the lid moves from a closed position to an open position, When the opening of the processing tank is opened, a gas curtain of an inert gas is formed to cover the vicinity of the surface of the etching liquid in the processing tank to form a gas curtain between the etching liquid in the processing tank and a gas outside the processing tank. Provided is an etching method characterized by suppressing contact.

According to a fourteenth aspect of the present invention, when the lid is moved and the wafer is taken in and out through the opening with the opening being opened, the inert gas is supplied to reduce the atmosphere of the inert gas. A thirteenth aspect is provided in which the formation of a gas curtain of an inert gas covering the vicinity of the surface of the etching solution in the processing tank is stopped while forming the vicinity of the opening.
An etching treatment apparatus according to the aspect is provided.

According to a fifteenth aspect of the present invention, when the lid is moved to open the opening, the inert gas is supplied to form the inert gas atmosphere near the opening, and the processing tank is opened. Forming a gas curtain of an inert gas that covers the vicinity of the liquid surface of the etching solution.
An etching treatment method according to any one of 2 to 14 is provided.

According to a sixteenth aspect of the present invention, when opening the opening by moving the lid, when the opening is started, the inert gas is supplied to reduce the atmosphere of the inert gas near the opening. The method according to any one of the twelfth to fourteenth aspects, wherein a gas curtain of an inert gas is formed to cover the vicinity of the liquid level of the etching solution in the processing tank. .

According to a seventeenth aspect of the present invention, when the opening of the processing tank is closed by the lid, a liquid surface of the etching solution in the processing tank and an inner surface of the lid are formed. The etching method according to any one of the twelfth to sixteenth aspects, wherein the space has a positive pressure.

According to an eighteenth aspect of the present invention, the two lid members constituting the lid and each base end of which is rotatably supported by the processing tank are rotated to close the lid to the closed position. And when moving between the open position, and when located in the open position, to supply the inert gas to contact the etching liquid in the processing tank with the gas outside the processing tank. An etching method according to any one of the twelfth to seventeenth aspects is provided.

According to a nineteenth aspect of the present invention, two lid members constituting the lid and each base end of which is rotatably supported by the processing tank are slid to move the lid to the closed position. When moving between the open position and when in the open position, the inert gas is supplied to suppress the contact between the etching solution in the processing tank and the gas outside the processing tank. The etching method according to any one of the twelfth to seventeenth aspects is provided.

According to the twentieth aspect of the present invention, when each of the lid members starts moving from the closed position of the lid to the open position, the lid member is disposed on the processing tank side surface of the lid at the closed position. The gas is supplied toward the engaging end of the lid member from the inert gas atmosphere forming gas discharge portion to form the inert gas atmosphere, and each lid member is in the open position of the lid. Before being located at the closed position, the gas is discharged in a planar manner from the gas discharge part for gas curtain formation arranged on the processing tank side surface of the lid at the closed position, and the lid at the closed position is The gas suction unit disposed on the processing tank side surface sucks the gas discharged in a planar manner from the gas curtain forming gas discharge unit to the etching liquid level in the processing tank. Eighteenth to form a gas curtain Providing an etching treatment method of described in nineteenth aspect.

[0027] According to a twenty-first aspect of the present invention, each of the lid members is disposed on the processing tank side surface of the lid at the closed position from when the lid member starts moving from the closed position to the open position. The gas is supplied toward the engaging end of the lid member from the inert gas atmosphere forming gas discharge portion to form the inert gas atmosphere, and each lid member is in the open position of the lid. Before being positioned in the processing tank, the gas is discharged in a planar manner from a gas curtain forming gas discharging unit disposed on the processing tank side, and the gas suction unit disposed on the processing tank side is used to discharge the gas for forming the gas curtain. The etching method according to the eighteenth or nineteenth aspect, wherein the gas discharged in a planar shape from the gas discharge part is sucked to form a gas curtain on the surface of the etching liquid in the processing tank. I will provide a.

According to a twenty-second aspect of the present invention, the concentration of the etching solution in the processing tank is measured by a concentration measuring device,
On the basis of the concentration of the etching solution in the processing tank measured by the concentration measuring device, an etching solution having the same component as the etching solution is replenished to the circulation path for circulating and supplying the etching solution in the processing tank. The etching method according to any one of the twelfth to twelfth aspects, wherein an etching solution having the same component as the etching solution is replenished from a replenishing path.

According to a twenty-third aspect of the present invention, a rectangular frame having the lid, the gas discharge part for forming a gas curtain, and the gas suction part is disposed on the opening of the processing tank.
The etching processing apparatus according to any one of the first to eighth and tenth aspects, wherein the opening of the rectangular frame is set to the opening of the processing tank.

[0030]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(First Embodiment) An etching apparatus according to a first embodiment of the present invention, as shown in FIG. Opening 1
a processing tank 1 having a and holding the etching solution 4;
A lid for performing an opening / closing operation between a closed position for closing the opening 1a of the processing tank 1 and an open position for opening the opening 1a; and the processing when the opening 1a of the processing tank 1 is opened by the lid. A gas supply device for supplying an inert gas such as nitrogen gas to the vicinity of the opening 1a in the tank 1 to prevent moisture absorption or evaporation by the etching solution 4 in the processing tank 1 is provided.

The processing tank 1 is formed of, for example, a rectangular box having an opening 1a for taking a wafer in and out of the processing tank.

As an example of the etching solution held in the processing tank 1, there can be mentioned an etching solution which can perform an etching process on the wafers 3,...
During the etching process of the wafer 3, an etching solution effective for removing a natural oxide film formed on the bottom of the uneven portion of the wafer to be etched may be mentioned. In some cases, variations occur in the uniform etching rate when the generation occurs. A more specific example of this type of etchant is, for example, a product name of Dikin Industries, Ltd.
The components of the cF-15 etchant are IPA (isopropyl alcohol) 97% to 99.99%, NH ₄ HF ₂
Is 0.01% to 3%. Further, as another example, when the etching process of the wafers 3,..., 3 can be performed at room temperature and the concentration change due to the evaporation of the evaporation component of the etching solution 4 occurs,
In some cases, variations occur in the uniform etching rate. BHF is an example of this type of etchant.

As an example of the wafer 3 to be etched, there is a wafer of about 6 inches to about 12 inches.

The lid is a rectangular plate-like member for opening and closing the wafer loading / unloading opening 1a of the processing tank 1, and each base end 9 is rotatably supported with respect to the processing tank 1 by a hinge 8 or the like. It has two lid members 6A and 6B. Engagement end portions 11 of the lid members 6A and 6B opposed to the base end portions 9 are formed so as to have L-shaped side surfaces that can be engaged with each other, and the closed positions of the lid members 6A and 6B. So that the opening 1a of the processing tank 1 is closed.

The gas supply device is disposed on the processing tank side surface of the lid at the closed position, and directs the gas toward the engagement ends 11, 11 of the lid members 6A, 6B. An inert gas atmosphere forming gas discharger for supplying the inert gas atmosphere to form the inert gas atmosphere, and a cover disposed at the closed position on the processing tank side surface;
And, the gas discharge unit 10a for forming a gas curtain, which discharges the gas in a planar manner, and the gas discharge unit 10a, which is disposed on the surface of the lid at the closed position on the processing tank side, and A gas suction unit 13 for sucking the gas discharged in a planar shape to form a gas curtain with respect to the liquid surface of the etching solution 4 in the processing tank, wherein each of the lid members 6A and 6B is From the closed position to the open position, the gas is supplied from the inert gas atmosphere forming gas discharging portions 10b, 10c, 10d to the engaging ends 11, 11 of the lid members 6A, 6B. To form the inert gas atmosphere, and before the gas curtain forming gas discharge unit 1 is positioned at the open position of the lid.
A gas curtain is formed on the surface of the etching liquid in the processing tank by discharging the gas from 0a and sucking the gas by the gas suction unit 13.

More specifically, the lid member 6A is provided as an example of a gas discharge portion for forming a gas curtain on the inner surface side of the lid member 6A at the closed position, that is, on the base end side of the processing tank side surface. Functioning first gas discharge unit 10 for forming gas curtain
a, and a second gas discharge unit 10b functioning as an example of an inert gas atmosphere forming gas discharge unit near the engagement end.
Has been arranged. As shown in FIG. 5, the first gas discharge unit 10a for forming a gas curtain is composed of a plurality of nozzles, for example, four nozzles, and discharges the inert gas from each nozzle in a planar manner. A gas curtain 27 of an inert gas can be formed on the liquid surface of the etching solution 4 in the inside. As shown in FIG. 5, the second gas discharge portion 10b is composed of a plurality of nozzles, for example, four nozzles. It is intended for supply.

On the other hand, the lid member 6B functions as an example of an inert gas atmosphere forming gas discharge part on the inner surface side of the lid member 6B at the closed position, that is, near the engagement end on the processing tank side surface. A third gas discharge unit 10c serving as an example of an inert gas atmosphere forming gas discharge unit is disposed on the base end side, and the third gas discharge unit 10c and the fourth gas discharge unit 10c A gas suction unit 13 for gas curtain suction is arranged between the gas discharge unit 10d and the gas discharge unit 10d. As shown in FIG. 5, the third gas discharge section 10c is composed of a plurality of nozzles, for example, four nozzles, and directs an inert gas such as nitrogen gas from each nozzle toward the engagement end of the lid member 6B. Supply. In addition, the fourth gas discharge unit 10d includes a plurality of nozzles such as four nozzles as shown in FIG.
An inert gas such as nitrogen gas is supplied from each nozzle to the lid member 6.
B is supplied toward the engaging end. Also,
The gas suction unit 13 for suctioning a gas curtain in the form of a nozzle is shown in FIG.
As shown in the figure, for example, it is composed of one rectangular suction port,
By suctioning the inert gas discharged from the first gas discharge unit 10a for forming a gas curtain in a planar manner through the suction port, the inert gas is placed on the liquid surface of the etching liquid 4 in the processing tank 1 so that the liquid surface is removed. To form a planar gas curtain 27 of inert gas that covers the gas curtain.

As shown in FIG. 5, the nozzle shape of the first gas discharge portion 10a is substantially rectangular, such as a rectangular shape for easily forming a gas curtain, while the second gas discharge portion 10b and the third gas discharge portion The gas discharge unit 10c and the fourth gas discharge unit 10d are substantially circular so that gas injection can be performed. Further, the nozzles of the second gas discharge unit 10b, the third gas discharge unit 10c, and the fourth gas discharge unit 10d are arranged at equal intervals so that the gas can be injected as uniformly as possible.

FIG. 4 shows a piping system for each nozzle and the like. In FIG. 4, a nitrogen gas is supplied to a first gas discharge unit 10a by a nitrogen gas supply path 12a.
Nitrogen gas is supplied to the gas discharge unit 10c through a nitrogen gas supply path 12c. A supply path 25 is connected to the nitrogen gas supply path 12a and the nitrogen gas supply path 12c. Nitrogen gas whose supply pressure is adjusted by the nitrogen gas regulating valve 15 from the same nitrogen gas supply source is supplied to the nitrogen gas through the supply path 25. Gas supply path 1
2a and the nitrogen gas supply path 12c. Also, the second
Nitrogen gas is supplied to the gas discharge section 10b by a nitrogen gas supply path 12b, and nitrogen gas is supplied to the fourth gas discharge section 10d by a nitrogen gas supply path 12d. A supply path 26 is connected to the nitrogen gas supply path 12b and the nitrogen gas supply path 12d. Nitrogen gas whose supply pressure is adjusted by the nitrogen gas regulating valve 15 from the same nitrogen gas supply source is supplied to the nitrogen gas through the supply path 26. The gas is supplied to a gas supply path 12b and a nitrogen gas supply path 12d. Nitrogen gas supply path 12a and nitrogen gas supply path 12
In each of c, the nitrogen gas supply path 12b, and the nitrogen gas supply path 12d, a nitrogen gas supply flow meter 16, a nitrogen gas supply flow control valve 17, and a nitrogen gas supply open / close valve 18 are provided. Further, the processing bath 1 is provided with a pressure measuring device 20 for measuring the pressure in the space 5 above the level of the etching solution 4 in the processing bath 1. A discharge path 7 for the etching solution 4 is provided at the bottom of the processing tank 1, and an opening / closing valve 21 for discharging the etching liquid is provided in the discharge path 7. 4 can be discharged through a discharge path 7. A gas discharge path 14 is connected to the gas suction section 13, and the gas discharge path 14 is provided with a blower 24 that performs a suction operation with a gas discharge flow control valve 22 and a gas discharge opening / closing valve 23. By driving, the inert gas is sucked from the gas suction unit 13 through the gas discharge path 14. Although not specifically shown, the control device 19 receives the measured values of the respective nitrogen gas regulating valves 15, the respective nitrogen gas flow meters 16, and the pressure measuring devices 20, and inputs these measured values. And a flow control valve 17 for each nitrogen gas, an on-off valve 18 for each nitrogen gas, an on-off valve 21 for discharging an etchant, and a flow control valve 22 for a gas discharge based on a predetermined etching process program and instructions from an operator. , The respective operations of the gas discharge on-off valve 23 and the blower 24 are controlled. Further, the control device 19 may also control the driving of a driving device (not shown) such as a motor or an air cylinder that drives the opening and closing operation of the lid members 6A and 6B. Therefore, the opening and closing operations of the lid members 6A and 6B, the nitrogen gas supply operation, and the like, which will be described later, are all controlled by the control device 19, so that the operations can be performed automatically.

As described above, the gas supply device is generally constituted by the first gas discharge unit 10a, the second gas discharge unit 10b, the third gas discharge unit 10c, the fourth gas discharge unit 10d, and the gas suction unit 13. ing.

An etching method performed by the etching apparatus having the above configuration will be described.

As shown in FIG. 1, the lid members 6A, 6B
When the opening 1a of the processing bath 1 is closed (when the opening of the lid members 6A and 6B is 0 degree), the liquid level of the etching solution 4 in the processing bath 1 and the lid members 6A and 6A,
The space 5 formed by the inner surface of 6B and the inner surface of
About 20 Pa). To create this positive pressure, the second
A small amount of nitrogen gas may be supplied into the space 5 from the gas discharge unit 10b and the fourth gas discharge unit 10d.
When a positive pressure can be formed only by evaporation of the etching solution 4, such supply of nitrogen gas is not required.

Next, as shown in FIG. 2, the lid members 6A,
6B from the closed position to the open position in synchronization with the hinge 8,
Start opening by 8. Before the lid members 6A, 6B are moved from the closed position to the open position, at least nitrogen gas is applied from the second gas discharging portion 10b and the fourth gas discharging portion 10d in the vicinity of each engaging end portion 11. When the supply is performed toward the end portion 11 and the engagement ends 11, 11 of the lid members 6A, 6B are released and a gap 28 starts to be formed between the engagement ends 11, 11, the processing tank A nitrogen gas flow is formed such that nitrogen gas is discharged from the first space 5 toward the outside of the processing tank. By this nitrogen gas flow, the engagement end portions 11 of the lid members 6A, 6B,
This prevents the outside air such as moisture from entering the processing tank from the outside of the processing tank due to the disengagement of 11. Thus, the second gas discharge unit 10b and the fourth gas discharge unit 1
The supply of the nitrogen gas from 0d toward the respective engagement end portions 11 is continued at least during the entire period from the closing position of the lid members 6A and 6B, that is, the opening position from 0 degrees to 90 degrees.

On the other hand, when the lid members 6A, 6B start to open from the closed position and open, for example, about 15 degrees (a state as shown in FIG. 2), the lid members 6A, 6B are also supplied from the third gas discharge part 10c.
The nitrogen gas is supplied to the region which has begun to be opened by the above, and together with the supply of the nitrogen gas from the second gas discharging portion 10b and the fourth gas discharging portion 10d, the engagement end portions 11 of the lid members 6A and 6B are provided. , 11 in the vicinity of a nitrogen gas atmosphere.

Further, when the lid members 6A, 6B start to open from the closed position and open, for example, about 75 degrees (the lid members 6A, 6B).
B is located at an intermediate position between FIGS. 2 and 3), the second gas discharging portion 10b and the fourth gas discharging portion 10d.
From the first gas discharge unit 10a in place of the third gas discharge unit 10c in addition to the supply of nitrogen gas toward each engagement end 11 from the blower. 24 is driven to be sucked by the gas suction unit 13 to start forming a planar inert gas gas curtain 27 that covers the surface of the etching solution 4 in the processing bath 1.

Next, as shown in FIG. 3, the lid members 6A,
When 6B is located at the open position (when opened by 90 degrees), a small amount of nitrogen gas is supplied from the second gas discharge part 10b and the fourth gas discharge part 10d toward each engagement end part 11 side. In addition, the blower 24 is driven while the inert gas is discharged from the first gas discharge unit 10 a in a planar manner, and is sucked by the gas suction unit 13, and the liquid level of the etching liquid 4 in the processing tank 1 is increased. A planar inert gas gas curtain 27 is formed. In this state, the second gas discharge unit 1
0b and a small amount of nitrogen gas supplied from the fourth gas discharge unit 10d, the engagement ends 11, 11 of the lid members 6A, 6B.
In the vicinity of the space, a nitrogen gas atmosphere is formed, and a planar inert gas gas curtain 27 is formed on the liquid surface of the etching solution 4 in the processing tank 1 to form the liquid surface. To prevent gas outside the processing tank from contacting the etching solution 4 in the processing tank 1.

With the lid members 6A and 6B positioned at the open positions, the carrier 3 containing a large number of wafers 3,..., 3 is loaded or unloaded into the processing tank 1.
For example, at the time of loading, the carrier 3 containing a large number of wafers 3,.
A is passed between A and 6B, immersed in the etching solution 4, and the etching process is started. Lid member 6 in open position
When passing between A and 6B, the supply of the inert gas from the first gas discharge unit 10a is stopped, and the amount of suction by the gas suction unit 13 is significantly reduced or stopped. , 3 are brought into contact with the inert gas injected from the first gas discharge unit 10a.
This is because the liquid held on the respective surfaces is unevenly distributed, for example, by being spread out to prevent uneven etching during the etching process. Note that a small amount of nitrogen gas supplied from the second gas discharging unit 10b and the fourth gas discharging unit 10d is held on the respective surfaces of the wafers 3,. There is no effect since the amount of liquid does not distribute unevenly.

Then, as soon as the wafers 3,..., 3 are stored in the processing tank 1, the supply of the inert gas from the first gas discharge unit 10a and the suction by the gas suction unit 13 are restarted. The blower 24 is driven while the inert gas is discharged in a planar manner from the first gas discharge unit 10 a to drive the gas suction unit 13.
And a gas curtain 27 of a planar inert gas that covers the surface of the etching solution 4 in the processing bath 1
Is formed again.

Then, contrary to the opening operation, the lid members 6A, 6B are started to be closed by the hinges 8, 8 from the open position to the closed position in synchronization with each other, as shown in FIGS. For example, when the lid members 6A and 6B are closed from 90 degrees to 75 degrees, the blower 24 is driven while the inert gas is discharged from the first gas discharge unit 10a in a planar manner, and the gas suction unit 1 is closed.
3 is a gas curtain 2 of a planar inert gas which is sucked by and covers the surface of the etching solution 4 in the processing bath 1.
7 and the second gas discharge portion 10b and the fourth gas discharge portion 10b.
Nitrogen gas continues to be supplied from the gas discharge unit 10d toward each engagement end 11 side.

Next, as shown in FIG. 3 to FIG. 2, the lid members 6A and 6B are synchronized to move from the open position to the closed position.
For example, when the lid members 6A and 6B are closed from 75 degrees to 15 degrees, the supply of the inert gas from the first gas discharge unit 10a and the suction by the gas suction unit 13 are stopped, and the planar inert gas is stopped. Of the gas curtain 27 is stopped.
Instead, the lid members 6A, 6B
To supply the nitrogen gas toward the region between the engagement end portions 11, 11, so that the second gas discharging portion 10 b and the fourth gas discharging portion 1
0d, the lid members 6A, 6B
A nitrogen gas atmosphere is formed in the vicinity of the engagement end portions 11 and 11.

Next, as shown in FIG. 2 to FIG. 1, the lid members 6A and 6B are synchronized to move from the open position to the closed position.
For example, cover members 6A and 6B from a closed position of 15 degrees to 0 degrees.
Is closed, the gas supply from the third gas discharging unit 10c is stopped, and only the supply of nitrogen gas from the second gas discharging unit 10b and the fourth gas discharging unit 10d causes the lid member 6 to be closed.
A nitrogen gas atmosphere is formed in the vicinity of the engagement ends 11, 11 of A, 6B.

Thereafter, as shown in FIG.
When 6B is closed, the second gas discharge unit 10b and the fourth gas
A small amount of nitrogen gas is supplied from the gas discharge unit 10d into the space 5, and the space 5 formed by the liquid surface of the etching solution 4 in the processing tank 1 and the inner surfaces of the lid members 6A and 6B is exposed. Pressure. When a positive pressure can be formed only by evaporation of the etching solution 4, such supply of nitrogen gas is not required.

When the wafer is carried out, the lid members 6A and 6B are opened as in the case of the wafer carry-in operation, and the processing tank 1 is opened at the open position.
After the wafers 3,..., 3 in the etching solution 4 are taken out for each carrier 2, the lid members 6A, 6B are closed again.

When the opening degree of the lid members 6A and 6B is from 0 to 15 degrees, the inert gas injected from the second gas discharging part 10b and the fourth gas discharging part 10d for forming an inert gas atmosphere is formed. The flow rate is about 30 / min, and the lid member 6A,
When the opening degree of 6B is from 15 degrees to 90 degrees, the flow rate of the inert gas injected from the first gas discharge unit 10a for forming the gas curtain is set to about 150 liter / min. Also,
When the wafers 3,..., 3 are taken in and out, that is, carried in / out, the gas curtain formation is stopped, but when the inert gas atmosphere is formed by the second gas discharge unit 10b and the fourth gas discharge unit 10d, the second gas discharge unit is stopped. The total of both the 10b and the fourth gas discharge unit 10d is set to approximately 5 liter / min. Further, in the suction unit 13, while forming the gas curtain, the gas curtain is opened 100%, while the wafers 3,.
0% or 5 to 10% of the opening area in order to stop gas curtain formation when taking in / out, ie carrying in / out
The aperture is squeezed to open the%, and 0% when the lid is at the closed position.

As the degree of opening of the lid members 6A and 6B increases, the flow rate of the nitrogen gas supplied from the second gas discharging part 10b and the fourth gas discharging part 10d may be proportionally increased. Not limited to, but in a step-like manner, for example, from 0 ° to 15 °, from 15 ° to 75 °, 75 °
The flow rate of the nitrogen gas may be increased in three stages from 90 degrees to 90 degrees. Alternatively, it may be divided into any two or four or more stages.

Regardless of the position of the lid member, it is preferable to avoid direct contact with the etching liquid surface, regardless of the position of the lid member. The reason is that as a result of the gas discharged from each gas discharge unit coming into direct contact with the etching liquid surface, the evaporation of the components from the etching liquid is promoted, and the change in the concentration of the etching liquid is likely to occur.

FIG. 25 shows an example of the operation timing of each of the discharge unit and the suction unit in the first embodiment. The horizontal axis indicates the degree of opening of the lid member, and shows a state in which the lid member is located from the closed position to the open position, and after the wafer is loaded and unloaded, returns to the closed position. The gas discharge unit 10a for forming a gas curtain includes:
Gas is discharged at the maximum flow rate between 75 degrees and 90 degrees, and is not discharged in other sections. The second gas discharging unit 10b and the fourth gas discharging unit 10d greatly reduce the flow rate to a level that does not hinder wafer loading and unloading at the time of loading and unloading the wafer, but perform a constant flow rate discharge in other sections to form a gas atmosphere. . The third gas discharge unit 10c discharges a gas at a constant flow rate only in a section between 15 degrees and 75 degrees. The suction part 13 is 90 degrees from 75 degrees.
The gas is sucked at the maximum flow rate between degrees, and in other sections, the suction force is greatly reduced to slightly suck the gas.
The degree of opening of the horizontal axis is 0 degree, the degree of opening is 0%,
If 90 degrees is read as the opening degree of the opening is 100%, it can be applied as an example of the operation timing of each of the discharge unit and the suction unit in the following embodiments of the slide type lid member.

According to the first embodiment, the lid member 6A,
6B, when the opening 1a of the processing tank 1 is opened and closed, and when the opening 1a is opened, the gas discharge units 10a, 10b, 10c, 10
d to form an inert gas atmosphere by forming an inert gas atmosphere and forming a gas curtain 27 of an inert gas that covers the vicinity of the surface of the etching solution in the processing tank. 4 prevents the gas outside the processing tank from coming into contact with the surface of the processing tank 4 and prevents evaporation of the etching solution 4 in the processing tank or moisture absorption in the gas outside the processing tank even when the lid member is opened and closed. Therefore, a change in the etching rate can be minimized, and a stable etching rate can be maintained. At the same time, the surface of the etching solution 4 in the processing bath 1 and the gas outside the processing bath can be prevented from coming into contact with each other. The evaporation of ammonium can be suppressed, the change in the concentration of the etching solution can be suppressed, and the deterioration can be suppressed. In particular, when the lid members 6A and 6B are located at the open positions, the liquid level of the etching solution 4 in the processing tank 1 is covered with the inert gas gas curtain 27, so that the gas outside the processing tank contacts the etching liquid 4. Therefore, even when the lid members 6A and 6B are opened, the evaporation of the etching solution 4 or the absorption of moisture in the gas outside the processing tank can be reliably prevented, and the change in the etching rate can be minimized. it can.

Further, by providing lid members 6A and 6B in the processing tank 1 and making the pressure in the processing tank 1 positive from the outside of the processing tank 1 at the closed position of the lid members 6A and 6B, Gas does not enter the processing tank, the evaporation of the etching solution 4 in the processing tank or the absorption of moisture in the gas outside the processing tank can be prevented, and the change in the etching rate can be minimized. A stable etching rate can be maintained.

The present invention is not limited to the above embodiment, but can be implemented in various other modes.

(Second Embodiment) For example, as shown in FIGS. 6 to 9, an etching apparatus according to a second embodiment of the present invention is not provided with the lid members 6A and 6B but with the processing tank 1. In a portion corresponding to the upper space 5, a gas discharge portion 31 for gas curtain formation composed of a plurality of rectangular nozzles is provided, and a gas suction portion 32 of a rectangular suction port is provided opposite to the gas discharge portion 31. You may.
That is, the first gas discharge unit 10a of the lid member 6A discharges gas at the same timing as the third gas discharge unit 10c,
Along with the supply of the nitrogen gas from the second gas discharge part 10b and the fourth gas discharge part 10d, a nitrogen gas atmosphere is formed near the engagement ends 11, 11 of the lid members 6A, 6B. On the other hand, the blower 24 is driven while the inert gas is discharged from the gas discharge unit 31 for forming the gas curtain in a planar shape, and is sucked by the gas suction unit 32, and the level of the etching liquid 4 in the processing tank 1 is lowered. A planar inert gas gas curtain 27 is formed.

FIG. 9 shows a piping system for each nozzle and the like. In FIG. 9, nitrogen gas is supplied to a gas discharge unit 31 for gas curtain formation through a nitrogen gas supply path 33. The nitrogen gas supply path 33 has a nitrogen gas regulating valve 15
A nitrogen gas supply flow control valve 37 and a nitrogen gas supply opening / closing valve 38 are provided and connected to a nitrogen gas supply source. Further, the first gas discharge unit 10a has a nitrogen gas supply path 1
2a, a nitrogen gas is supplied, and the second gas discharge unit 10b
Is supplied with nitrogen gas by a nitrogen gas supply path 12b,
Nitrogen gas is supplied to the third gas discharge unit 10c by a nitrogen gas supply path 12c, and nitrogen gas is supplied to the fourth gas discharge unit 10d by a nitrogen gas supply path 12d. A supply path 40 having a nitrogen gas supply flow meter 16 is connected to the nitrogen gas supply path 12a and the nitrogen gas supply path 12b, and a nitrogen gas supply flow meter 16 is connected to the nitrogen gas supply path 12c and the nitrogen gas supply path 12d. Another supply path 40 is connected, and the two supply paths 40, 40 are connected to one supply path 39. Therefore, the nitrogen gas whose supply pressure has been adjusted by the nitrogen gas adjusting valve 15 from the same nitrogen gas supply source is supplied to the supply path 3.
The gas is supplied to the two supply paths 40, 40 via the nozzle 9 and further supplied to the nitrogen gas supply paths 12a, 12b, 12c, 12d, respectively. Nitrogen gas supply paths 12a, 12b,
Each of 12c and 12d is provided with a nitrogen gas supply flow control valve 17 and a nitrogen gas supply opening / closing valve 18. Further, the processing bath 1 is provided with a pressure measuring device 20 for measuring the pressure in the space 5 above the level of the etching solution 4 in the processing bath 1. A discharge path 7 for the etching solution 4 is provided at the bottom of the processing tank 1, and an opening / closing valve 21 for discharging the etching liquid is provided in the discharge path 7. 4 can be discharged through a discharge path 7. A gas discharge passage 34 is connected to the gas suction unit 32, and the gas discharge passage 34 is provided with a blower 24 performing a suction operation with a gas discharge flow control valve 22 and a gas discharge opening / closing valve 23. By driving, the inert gas is sucked from the gas suction unit 32 through the gas discharge path 34. Although not specifically shown, the control device 19 includes each nitrogen gas regulating valve 1
5. The measured values of the nitrogen gas flow meter 16 and the pressure measuring device 20 are input, and based on the measured values, a predetermined etching process program and instructions from the operator, the flow rate of each nitrogen gas is measured. Adjusting valves 17 and 37, on-off valves 18 and 38 for each nitrogen gas, on-off valve 21 for etching solution discharge,
Each operation of the gas discharge flow control valve 22, the gas discharge opening / closing valve 23, and the blower 24 is controlled. Also,
The control device 19 may also control the driving of a driving device such as a motor or an air cylinder that drives the opening and closing operation of the lid members 6A and 6B. Therefore, the opening and closing operations of the lid members 6A and 6B, the nitrogen gas supply operation, and the like, which will be described later, are all controlled by the control device 19, so that the operations can be performed automatically.

An etching method performed by the etching apparatus according to the second embodiment will be described.

As shown in FIG. 6, the lid members 6A, 6B
When the opening 1a of the processing bath 1 is closed (when the opening of the lid members 6A and 6B is 0 degree), the liquid level of the etching solution 4 in the processing bath 1 and the lid members 6A and 6A,
The space 5 formed by the inner surface of 6B and the inner surface of
About 20 Pa). To create this positive pressure, the second
A small amount of nitrogen gas may be supplied into the space 5 from the gas discharge unit 10b and the fourth gas discharge unit 10d.
When a positive pressure can be formed only by evaporation of the etching solution 4, such supply of nitrogen gas is not required.

Next, as shown in FIG. 7, the lid members 6A,
6B from the closed position to the open position in synchronization with the hinge 8,
Start opening by 8. Before the lid members 6A, 6B are moved from the closed position to the open position, at least nitrogen gas is applied from the second gas discharging portion 10b and the fourth gas discharging portion 10d in the vicinity of each engaging end portion 11. When the supply is performed toward the end portion 11 and the engagement ends 11, 11 of the lid members 6A, 6B are released and a gap 28 starts to be formed between the engagement ends 11, 11, the processing tank A nitrogen gas flow is formed such that nitrogen gas is discharged from the first space 5 toward the outside of the processing tank. By this nitrogen gas flow, the engagement end portions 11 of the lid members 6A, 6B,
This prevents the outside air such as moisture from entering the processing tank from the outside of the processing tank due to the disengagement of 11. Thus, the second gas discharge unit 10b and the fourth gas discharge unit 1
The supply of the nitrogen gas from 0d toward the respective engagement end portions 11 is continued at least during the entire period from the closing position of the lid members 6A and 6B, that is, the opening position from 0 degrees to 90 degrees.

On the other hand, when the lid members 6A and 6B are opened from the closed position and opened, for example, by about 15 degrees (the state as shown in FIG. 7), the first gas discharge part 10a and the third gas discharge part 10c
Also, the nitrogen gas is supplied to the region that has begun to be opened by the lid members 6A and 6B, and together with the supply of the nitrogen gas from the second gas discharge unit 10b and the fourth gas discharge unit 10d,
A nitrogen gas atmosphere is formed near the engagement ends 11, 11 of the lid members 6A, 6B.

Further, when the lid members 6A, 6B start to open from the closed position and open, for example, about 75 degrees (the lid members 6A, 6B).
B is located at an intermediate position between FIGS. 7 and 8), and nitrogen gas is supplied from the second gas discharging portion 10b and the fourth gas discharging portion 10d toward each engagement end portion 11 side. In addition, the first gas discharge unit 10a and the third gas discharge unit 10
The blower 24 is driven while the inert gas is discharged in a planar manner from the gas discharge unit 31 for forming a gas curtain in place of c, and is sucked by the gas suction unit 32 to remove the etching liquid 4 in the processing tank 1. The formation of a planar inert gas gas curtain 27 covering the liquid surface is started.

Next, as shown in FIG. 8, the lid members 6A,
When 6B is located at the open position (when opened by 90 degrees), a small amount of nitrogen gas is supplied from the second gas discharge part 10b and the fourth gas discharge part 10d toward each engagement end part 11 side. At the same time, the blower 24 is driven while the inert gas is discharged in a planar manner from the gas discharge unit 31 for forming a gas curtain, and the inert gas is sucked by the gas suction unit 32.
A planar inert gas curtain 27 covering the surface of the etching solution 4 is formed. In this state, the second
With a small amount of nitrogen gas supplied from the gas discharge unit 10b and the fourth gas discharge unit 10d, a nitrogen gas atmosphere is formed near the engagement ends 11, 11 of the lid members 6A, 6B, On the liquid surface of the etching solution 4 in the processing bath 1, a gas curtain 27 of a planar inert gas is provided.
Is formed so as to cover the liquid surface, thereby preventing gas outside the processing tank from contacting the etching liquid 4 in the processing tank 1.

With the lid members 6A, 6B located at the open positions, the carrier 3 containing a large number of wafers 3,..., 3 is loaded or unloaded into the processing tank 1.
For example, at the time of loading, the carrier 3 containing a large number of wafers 3,.
A is passed between A and 6B, immersed in the etching solution 4, and the etching process is started. Lid member 6 in open position
When passing between A and 6B, the supply of the inert gas from the gas curtain forming gas discharge unit 31 is stopped, and the amount of suction by the gas suction unit 32 is significantly reduced or stopped. 3 comes into contact with the inert gas injected from the gas discharge part 31 for gas curtain formation, the liquid held on the respective surfaces of the wafers 3,. This is for preventing uneven etching during the etching process. Note that a small amount of nitrogen gas supplied from the second gas discharging unit 10b and the fourth gas discharging unit 10d is held on the respective surfaces of the wafers 3,. There is no effect since the amount of liquid does not distribute unevenly.

Then, as soon as the wafers 3,..., 3 are stored in the processing tank 1, the supply of the inert gas from the gas discharge unit 31 for gas curtain formation and the suction by the gas suction unit 32 are restarted. And gas discharge part 3 for gas curtain formation
The blower 24 discharges the inert gas in a plane from 1
Is driven by the gas suction unit 32 to form again a planar inert gas gas curtain 27 that covers the surface of the etching solution 4 in the processing bath 1.

Then, contrary to the opening operation, the lid members 6A and 6B are started to be closed by the hinges 8 and 8 from the open position to the closed position in synchronization with each other, as shown in FIGS. For example, when the lid members 6A and 6B are closed from 90 degrees to 75 degrees, the blower 24 is driven while the inert gas is discharged in a planar manner from the gas discharge unit 31 for gas curtain formation, and suction is performed by the gas suction unit 32. Then, a planar inert gas gas curtain 27 covering the surface of the etching solution 4 in the processing bath 1 is formed, and the second gas discharge unit 1 is formed.
0b and the nitrogen gas from the fourth gas discharge part 10d continue to be supplied toward each engagement end part 11 side.

Next, as shown in FIG. 8 to FIG. 7, the lid members 6A and 6B are synchronously moved from the open position to the closed position.
For example, when the lid members 6A and 6B are closed from 75 degrees to 15 degrees, the supply of the inert gas from the gas discharge unit 31 for forming a gas curtain and the suction by the gas suction unit 32 are stopped, and the planar irregularity is stopped. The formation of the gas curtain 27 of the active gas is stopped. Instead, the first gas discharge unit 10a and the third
Nitrogen gas is supplied from the gas discharge portion 10c toward the region between the engagement ends 11, 11 by the lid members 6A, 6B, and the second
In conjunction with the supply of nitrogen gas from the gas discharge unit 10b and the fourth gas discharge unit 10d, the engagement ends 1 of the lid members 6A and 6B are
A nitrogen gas atmosphere is formed in the vicinity between 1 and 11.

Next, as shown in FIG. 7 to FIG. 6, the lid members 6A and 6B are synchronously moved from the open position to the closed position.
For example, cover members 6A and 6B from a closed position of 15 degrees to 0 degrees.
Is closed, the supply of gas from the first gas discharge unit 10a and the third gas discharge unit 10c is stopped, and only the supply of nitrogen gas from the second gas discharge unit 10b and the fourth gas discharge unit 10d is performed. 6A, 6B engagement ends 11, 11
A nitrogen gas atmosphere is formed near the gap.

Thereafter, as shown in FIG. 6, the lid members 6A,
When 6B is closed, the second gas discharge unit 10b and the fourth gas
A small amount of nitrogen gas is supplied from the gas discharge unit 10d into the space 5, and the space 5 formed by the liquid surface of the etching solution 4 in the processing tank 1 and the inner surfaces of the lid members 6A and 6B is exposed. Pressure. When a positive pressure can be formed only by evaporation of the etching solution 4, such supply of nitrogen gas is not required.

When the wafer is carried out, the lid members 6A and 6B are opened as in the case of the wafer carry-in operation, and the processing tank 1 is opened at the open position.
After the wafers 3,..., 3 in the etching solution 4 are taken out for each carrier 2, the lid members 6A, 6B are closed again.

When the opening degree of the lid members 6A and 6B is from 0 to 15 degrees, the inert gas injected from the second gas discharging section 10b and the fourth gas discharging section 10d for forming an inert gas atmosphere is formed. The flow rate is about 30 / min, and the lid member 6A,
When the opening degree of 6B is from 15 degrees to 90 degrees, the flow rate of the inert gas injected from the gas discharge unit 31 for forming a gas curtain is about 150 liter / min. When the wafers 3,..., 3 are taken in and out, that is, carried in and out, the gas curtain formation is stopped.
When the inert gas atmosphere is formed by the gas discharge unit 10b and the fourth gas discharge unit 10d, the total of both the second gas discharge unit 10b and the fourth gas discharge unit 10d is about 5 liter / min. In addition, in the suction unit 32, when forming the gas curtain, the opening is made 100%, and when the wafers 3,... The aperture is squeezed to open 10% to 10%, and 0% when the lid is at the closed position.

As the degree of opening of the lid members 6A and 6B increases, the flow rate of the nitrogen gas supplied from the second gas discharging part 10b and the fourth gas discharging part 10d may be proportionally increased. Not limited to, but in a step-like manner, for example, from 0 ° to 15 °, from 15 ° to 75 °, 75 °
The flow rate of the nitrogen gas may be increased in three stages from 90 degrees to 90 degrees. Alternatively, it may be divided into any two or four or more stages.

Regardless of the position of the lid member, it is preferable to avoid direct contact with the etching liquid surface, regardless of the position of the lid member. The reason is that as a result of the gas discharged from each gas discharge unit coming into direct contact with the etching liquid surface, the evaporation of the components from the etching liquid is promoted, and the change in the concentration of the etching liquid is likely to occur.

According to the second embodiment, the lid member 6A,
6B, when the opening 1a of the processing tank 1 is opened and closed, and when the opening 1a is opened, the gas discharge units 10a, 10b, 10c, 10
By supplying an inert gas from d and 31 to form an inert gas atmosphere and forming a gas curtain 27 of an inert gas that covers the vicinity of the surface of the etching liquid in the processing tank, the inside of the processing tank 1 is formed. It is possible to prevent the gas outside the processing tank from coming into contact with the surface of the etching solution 4, and to vaporize the etching solution 4 in the processing bath or absorb moisture in the gas outside the processing bath even when the lid member is opened and closed. Can be prevented, the change in the etching rate can be minimized, and a stable etching rate can be maintained. At the same time, the surface of the etching solution 4 in the processing bath 1 and the gas outside the processing bath can be prevented from coming into contact with each other. The evaporation of ammonium can be suppressed, the change in the concentration of the etching solution can be suppressed, and the deterioration can be suppressed. In particular, when the lid members 6A and 6B are located at the open positions, the gas discharge section 31 and the gas suction section 32 provided in the portion of the processing tank 1 facing the space 5 cause the gas in the processing tank 1 to be opened. Along the surface of the etching solution 4 and the first
Since the gas curtain 27 of the inert gas is formed at a position closer to the liquid surface than in the case of the embodiment to cover the liquid surface, gas outside the processing tank cannot contact the etching solution 4 and the lid is closed. Even at the open positions of the members 6A and 6B, the evaporation of the etching solution 4 or the absorption of moisture in the gas outside the processing tank can be reliably prevented, and the change in the etching rate can be minimized.

Further, by providing lid members 6A and 6B in the processing tank 1 and making the pressure in the processing tank 1 positive from the outside of the processing tank 1 at the closed position of the lid members 6A and 6B, Gas does not enter the processing tank, the evaporation of the etching solution 4 in the processing tank or the absorption of moisture in the gas outside the processing tank can be prevented, and the change in the etching rate can be minimized. A stable etching rate can be maintained.

(Third Embodiment) An etching apparatus according to a third embodiment of the present invention comprises a first
By combining the embodiment and the second embodiment, as shown in FIG. 10, a gas curtain forming gas discharge unit 31 composed of a plurality of rectangular nozzles is provided in a portion corresponding to the space 5 above the processing tank 1. At the same time, the gas suction unit 13 is disposed on the lid member 6B, and the gas curtain 27 formed by being discharged from the gas discharge unit 31 for forming a gas curtain is suctioned by the gas suction unit 13 and the first gas discharge unit 10a is closed. It may be omitted. Lid member 6 in the third embodiment
The relationship between the opening and closing operations of A and 6B and the gas supply operation is basically the same as in the first embodiment, and the same operation and effect as in the first embodiment can be achieved.

(Fourth Embodiment) FIG. 1 shows an etching apparatus according to a fourth embodiment of the present invention.
As shown in FIGS. 1 to 13, the opening 1a of the processing tank 1 is not limited to the one that is directly opened and closed by the lid members 6A and 6B. That is, the rectangular frame 50 is fixed on the opening 1a of the processing tank 1, and the opening 1a of the processing tank 1 is fixed by the lid members 6A and 6B.
Therefore, the opening 50a of the rectangular frame 50 may be opened and closed. The rectangular frame body 50 expands the space 5 of the processing tank 1, and has a gas curtain forming gas discharge section 52 composed of a plurality of rectangular nozzles to which a nitrogen gas supply path 53 is connected. , A gas suction portion 54 having a rectangular suction port facing the gas discharge portion 52 and connected to the gas discharge passage 55. According to the fourth embodiment, the lid members 6A, 6B, the gas discharge part 52 for gas curtain formation, and the gas suction are formed on the opening 1a of the processing tank 1 without any special processing. By simply fixing the rectangular frame 50 having the portion 54, the conventional open-type processing tank can be easily improved to the lid-openable processing tank 1 according to the present embodiment. Reference numeral 56 denotes an overflow opening provided in the processing tank 1, and reference numeral 51 denotes an overflow discharge passage for discharging the overflowing etchant from the overflow opening 56. Further, in the fourth embodiment, the first gas discharging unit 10a and the third gas discharging unit 10c are omitted for simplification.

An etching method performed by the etching apparatus of the fourth embodiment will be described.

As shown in FIG. 11, the lid members 6A, 6A
B, when the opening 1a of the processing tank 1 is closed (when the opening degrees of the lid members 6A and 6B are 0 degrees), the liquid level of the etching solution 4 in the processing tank 1 and the lid member 6
A space 5 formed by the inner surfaces of the first and second inner surfaces A and 6B has a positive pressure (for example, 1
About 0 to 20 Pa). To create this positive pressure,
A minute amount of nitrogen gas may be supplied into the space 5 from the second gas discharge unit 10b and the fourth gas discharge unit 10d. When a positive pressure can be formed only by evaporation of the etching solution 4, such supply of nitrogen gas is not required.

Next, as shown in FIG.
A, 6B are started to be opened by the hinges 8, 8 from the closed position to the open position in synchronization with each other. Before the lid members 6A, 6B are moved from the closed position to the open position, at least nitrogen gas is applied from the second gas discharging portion 10b and the fourth gas discharging portion 10d in the vicinity of each engaging end portion 11. When the supply is performed toward the end portion 11 and the engagement ends 11, 11 of the lid members 6A, 6B are released and a gap 28 starts to be formed between the engagement ends 11, 11, the processing tank A nitrogen gas flow is formed such that nitrogen gas is discharged from the first space 5 toward the outside of the processing tank. Due to this nitrogen gas flow, the engagement ends 1 of the lid members 6A, 6B are formed.
This prevents the outside air such as moisture from entering the processing tank from the outside of the processing tank due to the disengagement of the engagements 1 and 11. As described above, the supply of the nitrogen gas from the second gas discharge portion 10b and the fourth gas discharge portion 10d toward the respective engagement end portions 11 is performed at least when the lid members 6A and 6B are in the closed position, that is, 0 degrees. Supply is continued for the entire period up to the 90-degree open position.

On the other hand, when the lid members 6A and 6B are opened from the closed position and opened, for example, by about 15 degrees (a state as shown in FIG. 12), the inert gas is discharged from the gas discharge part 52 for gas curtain formation in a planar manner. The blower 24 is driven while being sucked by the gas suction unit 54 to start forming a planar inert gas gas curtain 27 that covers the surface of the etching solution 4 in the processing bath 1. At this time, the second gas discharge unit 1
Nitrogen gas is continuously supplied from Ob and the fourth gas discharge portion 10d to form a nitrogen gas atmosphere near the engagement ends 11, 11 of the lid members 6A, 6B.

Further, when the lid members 6A, 6B start to open from the closed position and open, for example, about 75 degrees (the lid members 6A, 6B).
B is located at an intermediate position between FIGS. 12 and 13), the second gas discharging portion 10b and the fourth gas discharging portion 10d.
In addition to the supply of nitrogen gas toward each engagement end 11 side, the blower 24 is driven while the inert gas is discharged in a planar manner from the gas discharge gas forming portion 52 for gas curtain formation. Suction is performed by the suction unit 54 to form a planar inert gas gas curtain 27 that covers the surface of the etching solution 4 in the processing bath 1.

Next, as shown in FIG.
When A and 6B are in the open position (when opened 90 degrees)
Includes a second gas discharge unit 10b and a fourth gas discharge unit 10d.
A small amount of nitrogen gas is supplied toward each of the engagement end portions 11 and the gas discharge portion 52 for gas curtain formation.
The blower 24 is driven while discharging the inert gas in a planar manner, and is sucked by the gas suction unit 54 to cover the surface of the etching liquid 4 in the processing tank 1. The gas curtain 27 is formed. In this state, a small amount of nitrogen gas supplied from the second gas discharge unit 10b and the fourth gas discharge unit 10d forms a nitrogen gas atmosphere near the engagement ends 11, 11 of the lid members 6A, 6B. In addition, a gas curtain 2 of a planar inert gas is placed on the surface of the etching solution 4 in the processing bath 1.
7 is formed to cover the liquid surface, thereby preventing gas outside the processing tank from contacting the etching liquid 4 in the processing tank 1.

With the lid members 6A and 6B located at the open positions, the carrier 3 containing a large number of wafers 3,..., 3 is loaded or unloaded into the processing tank 1.
For example, at the time of loading, the carrier 3 containing a large number of wafers 3,.
A is passed between A and 6B, immersed in the etching solution 4, and the etching process is started. Lid member 6 in open position
When passing between A and 6B, the supply of the inert gas from the gas curtain forming gas discharge unit 52 is stopped, and the amount of suction by the gas suction unit 54 is significantly reduced or stopped. 3 comes into contact with the inert gas injected from the gas curtain forming gas discharge unit 31, so that the liquid held on the respective surfaces of the wafers 3,... This is for preventing uneven etching during the etching process. Note that a small amount of nitrogen gas supplied from the second gas discharging unit 10b and the fourth gas discharging unit 10d is held on the respective surfaces of the wafers 3,. There is no effect since the amount of liquid does not distribute unevenly.

Then, as soon as the wafers 3,..., 3 are stored in the processing tank 1, the supply of the inert gas from the gas discharge unit 52 for gas curtain formation and the suction by the gas suction unit 54 are restarted. And a gas discharge unit 5 for forming a gas curtain.
The blower 24 discharges the inert gas in a planar manner from 2
Is driven by the gas suction unit 54 to form again a planar inert gas gas curtain 27 that covers the surface of the etching solution 4 in the processing tank 1.

Then, contrary to the opening operation, the lid members 6A, 6B are started to be closed by the hinges 8, 8 from the open position to the closed position in synchronization with each other as shown in FIGS. For example, when the lid members 6A and 6B are closed from 90 degrees to 75 degrees, the blower 24 is driven while the inert gas is discharged from the gas discharge part 52 for gas curtain formation in a planar shape, and the gas suction part 54 sucks the inert gas. The processing tank 1
A gas curtain 27 of a planar inert gas covering the liquid surface of the etching solution 4 in the inside is formed, and nitrogen gas is supplied from the second gas discharging portion 10b and the fourth gas discharging portion 10d to each of the engagement end portions 11. Continue to supply towards the side.

Next, as shown in FIG. 13 to FIG.
When the cover members 6A and 6B are closed from the open position to the close position in a synchronized manner from, for example, 75 degrees to 15 degrees, the inert gas from the gas discharge portion 52 for forming a gas curtain is closed. And the suction by the gas suction unit 54 is reduced, but the supply of the nitrogen gas from the second gas discharge unit 10b and the fourth gas discharge unit 10d causes the lid members 6A,
A nitrogen gas atmosphere is continuously formed in the vicinity of the engagement ends 11 of 6B.

Next, from FIG. 12 to FIG. 11,
The lid members 6A, 6B are synchronized to move from the open position to the closed position, for example, from 15 degrees to 0 degree closed position.
When 6B is closed, the supply of the inert gas from the gas curtain forming gas discharge unit 52 and the suction by the gas suction unit 54 are stopped, and the nitrogen gas from the second gas discharge unit 10b and the fourth gas discharge unit 10d is stopped. The nitrogen gas atmosphere is formed near the engagement end portions 11 of the lid members 6A and 6B only by supplying the nitrogen gas.

Thereafter, as shown in FIG.
When A and 6B are closed, a small amount of nitrogen gas is supplied from the second gas discharging portion 10b and the fourth gas discharging portion 10d to the space 5A.
The space 5 formed between the liquid level of the etching solution 4 in the processing tank 1 and the inner surfaces of the lid members 6A and 6B is set to a positive pressure. When a positive pressure can be formed only by evaporation of the etching solution 4, such supply of nitrogen gas is not required.

When the wafer is carried out, the lid members 6A and 6B are opened and the processing tank 1 is opened at the open position in the same manner as when the wafer is carried in.
After the wafers 3,..., 3 in the etching solution 4 are taken out for each carrier 2, the lid members 6A, 6B are closed again.

When the opening degree of the lid members 6A and 6B is from 0 to 15 degrees, the inert gas injected from the second gas discharging part 10b and the fourth gas discharging part 10d for forming an inert gas atmosphere is formed. The flow rate is about 30 / min, and the lid member 6A,
When the opening degree of 6B is from 15 degrees to 90 degrees, the flow rate of the inert gas injected from the gas curtain forming gas discharge unit 52 for forming the gas curtain is about 150 liter / min. When the wafers 3,..., 3 are taken in and out, that is, carried in and out, the gas curtain formation is stopped.
When the inert gas atmosphere is formed by the gas discharge unit 10b and the fourth gas discharge unit 10d, the total of both the second gas discharge unit 10b and the fourth gas discharge unit 10d is about 5 liter / min. In addition, in the suction section 54, the gas curtain is opened when the gas curtain is formed, while the gas curtain is stopped when the wafers 3,... The aperture is squeezed to open 10% to 10%, and 0% when the lid is at the closed position.

According to the fourth embodiment, the processing tank 1 is not subjected to any special processing, and the opening 1
A conventional open-type processing tank according to the present embodiment can be formed by simply fixing a rectangular frame 50 having lid members 6A and 6B, a gas discharge part 52 for forming a gas curtain, and a gas suction part 54 on a. It can be easily improved to the open-close type processing tank 1. The relationship between the opening and closing operations of the lid members 6A and 6B and the gas supply operation in the fourth embodiment is basically the same as in the first embodiment, and the same operational effects as those in the first embodiment can be obtained. .

(Fifth Embodiment) FIG. 1 shows an etching apparatus according to a fifth embodiment of the present invention.
As shown in FIGS. 4 to 15, in the processing apparatus of the fourth embodiment, the above-mentioned lid may not be constituted by the two lid members 6A and 6B but may be constituted by one plate-shaped lid member 6C. Good. That is, the base end of one plate-shaped lid member 6C is opened and closed with respect to the processing tank 1 by the hinge 8, and the base member of the lid member 6C faces the end opposite to the base end,
A bracket 60 is erected on the processing tank 1, and the second gas discharge unit 10 b is arranged on the bracket 60. Therefore, the second gas discharge unit 10b provided on the bracket 60 of the processing tank 1
The gas atmosphere is formed at the opening 1a of the processing tank 1 opened by the lid member 6C by the nitrogen gas injection from the fourth gas discharge part 10d of the lid member 6C.

According to the fifth embodiment, the processing tank 1 can be opened without any special processing.
a on the cover member 6C and the gas discharge portion 5 for forming a gas curtain.
By simply fixing the rectangular frame 50 having the gas suction part 2 and the gas suction part 54, the conventional open processing tank can be easily improved to the lid opening / closing processing tank 1 according to the present embodiment. Further, since the lid is constituted by one lid member 6C, the lid can be made simpler. The relationship between the opening / closing operation of the lid member 6C and the gas supply operation in the fifth embodiment is basically the same as in the first embodiment, and the same operational effects as those in the first embodiment can be achieved.

Sixth Embodiment An etching apparatus according to a sixth embodiment of the present invention is shown in FIG.
As shown in FIGS. 6 to 18, the lid members 6 </ b> A and 6 </ b> B are not limited to those that are opened and closed via the hinges 8, but may be opened and closed by a slide method. That is, the opening 1a of the processing apparatus of FIG.
D and 6E are in the closed position in FIG. 16 where the engagement ends 11 and 11 are engaged with each other, and the lid members 6D and 6E are in the engagement end 1
In the direction in which the lid members 1 and 11 move away from each other (in FIG. 18, the lid member 6A is leftward and the lid member 6B is rightward), they move along the horizontal direction, for example, substantially along the horizontal direction, and move between the open position in FIG. It may be opened and closed. The engaging end portions 11, 11 of the lid members 6D, 6E have the second gas discharging portion 61b and the fourth gas discharging portion 61b facing each other corresponding to the second gas discharging portion 10b and the fourth gas discharging portion 10d, respectively. Gas discharge part 61d
Is arranged so that nitrogen gas can be ejected from the gas discharge portions 61b and 61d toward the engagement ends 11 and 11 of the lid members 6D and 6E.

An etching method performed by the etching apparatus according to the sixth embodiment will be described.

As shown in FIG. 16, the lid members 6D, 6D
When the opening 1a of the processing tank 1 is closed by E, the space 5 formed by the liquid level of the etching liquid 4 in the processing tank 1 and the inner surfaces of the lid members 6D and 6E is positive pressure ( For example, about 10 to 20 Pa). In order to form this positive pressure, the second gas discharge unit 61b and the fourth gas discharge unit 6
A small amount of nitrogen gas from 1d may be supplied into the processing tank 1 and the space 5 in the rectangular frame 50. When a positive pressure can be formed only by evaporation of the etching solution 4, such supply of nitrogen gas is not required.

Next, as shown in FIG.
D and 6E are started to move left and right from the closed position to the open position in synchronization with each other. Before the lid members 6D and 6E are moved from the closed position to the open position, at least nitrogen gas is applied from the second gas discharging portion 61b and the fourth gas discharging portion 61d in the vicinity of each engagement end portion 11. When the supply is performed toward the end 11 and the engagement ends 11, 11 of the lid members 6D, 6E are disengaged and a gap 68 starts to be formed between the engagement ends 11, 11, the rectangular frame is formed. A nitrogen gas flow is formed such that nitrogen gas is discharged from the space 5 of the body 50 toward the outside of the processing tank.
Due to this nitrogen gas flow, the engagement ends 1 of the lid members 6D and 6E are formed.
This prevents the outside air such as moisture from entering the processing tank from the outside of the processing tank due to the disengagement of the engagements 1 and 11. As described above, the supply of the nitrogen gas from the second gas discharge part 61b and the fourth gas discharge part 61d toward the respective engagement ends 11 is at least when the lid members 6D and 6E are closed from the closed position to the open position. Supply for all of the period.

On the other hand, when the lid members 6D and 6E are opened from the closed position and opened, for example, about half (the state as shown in FIG. 17), the inert gas is discharged from the gas curtain forming gas discharge section 52 in a planar manner. The blower 24 is driven to be sucked by the gas suction unit 54 to start forming a planar inert gas gas curtain 27 that covers the surface of the etching solution 4 in the processing bath 1. At this time, the second gas discharge unit 6
Nitrogen gas is continuously supplied from 1b and the fourth gas discharge part 61d, and a nitrogen gas atmosphere is formed near the engagement ends 11, 11 of the lid members 6D, 6E.

Further, when the lid members 6D and 6E are opened from the closed position and opened, for example, about three quarters (the lid members 6D and 6E are opened).
6E is located at an intermediate position between FIGS. 17 and 18), the second gas discharging portion 61b and the fourth gas discharging portion 61.
In addition to the supply of nitrogen gas toward each engagement end portion 11 from d, the blower 24 is driven while the inert gas is discharged from the gas discharge portion 52 for gas curtain formation in a planar manner. The gas is suctioned by the gas suction part 54 to form a planar inert gas gas curtain 27 that covers the surface of the etching solution 4 in the processing bath 1.

Next, as shown in FIG.
When D and 6E are located at the open positions, a small amount of nitrogen gas is supplied from the second gas discharge portion 61b and the fourth gas discharge portion 61d toward each engagement end portion 11 and the gas curtain is formed. The blower 24 is driven while the inert gas is discharged from the gas discharge unit 52 in a planar shape, and the gas suction unit 5 is driven.
4 is a gas curtain 2 of a planar inert gas which is sucked by and covers the liquid surface of the etching solution 4 in the processing tank 1.
7 is formed. In this state, a small amount of nitrogen gas supplied from the second gas discharge part 61b and the fourth gas discharge part 61d forms a nitrogen gas atmosphere near the engagement ends 11, 11 of the lid members 6D, 6E. As well as
A gas curtain 27 of a planar inert gas is formed on the liquid surface of the etching liquid 4 in the processing tank 1 to cover the liquid surface, so that gas outside the processing tank 1
So that it cannot come into contact with the above-mentioned etching solution 4.

With the lid members 6D and 6E positioned at the open positions, the carrier 3 containing a large number of wafers 3,..., 3 is loaded or unloaded into the processing tank 1.
For example, at the time of loading, the carrier 3 containing a large number of wafers 3,.
After passing between D and 6E, it is immersed in the etching solution 4 to start the etching process. Lid member 6 in open position
When passing between D and 6E, the supply of the inert gas from the gas curtain forming gas discharge unit 52 is stopped, and the amount of suction by the gas suction unit 54 is significantly reduced or stopped. 3 comes into contact with the inert gas injected from the gas curtain forming gas discharge unit 31, so that the liquid held on the respective surfaces of the wafers 3,... This is for preventing uneven etching during the etching process. Note that a small amount of nitrogen gas supplied from the second gas discharge unit 61b and the fourth gas discharge unit 61d is held on the respective surfaces of the wafers 3,. There is no effect since the amount of liquid does not distribute unevenly.

Then, as soon as the wafers 3,..., 3 are stored in the processing tank 1, the supply of the inert gas from the gas discharge unit 52 for gas curtain formation and the suction by the gas suction unit 54 are restarted. And a gas discharge unit 5 for forming a gas curtain.
The blower 24 discharges the inert gas in a planar manner from 2
Is driven by the gas suction unit 54 to form again a planar inert gas gas curtain 27 that covers the surface of the etching solution 4 in the processing tank 1.

Thereafter, contrary to the opening operation, the lid members 6D and 6E are started to be closed from the open position to the closed position in synchronization with each other as shown in FIGS. For example, when the lid members 6D and 6E are closed to about a quarter from the open position, the blower 24 is driven while the inert gas is discharged from the gas discharge unit 52 for gas curtain formation in a planar manner, and the gas suction unit is driven. The surface of the etching liquid 4 in the processing bath 1 is sucked by the gas 54 to form a planar inert gas gas curtain 27 covering the surface of the etching liquid 4, and the second gas discharge unit 61 b and the fourth gas discharge unit 61 d are formed. Nitrogen gas from each engagement end 11
Continue feeding towards the side.

Next, as shown in FIG. 18 to FIG.
The cover members 6D and 6E are synchronized to move from the open position to the close position, for example, from about one quarter to about half.
When D and 6E are closed, the supply of the inert gas from the gas discharge unit 52 for gas curtain formation and the gas suction unit 54
However, the supply of nitrogen gas from the second gas discharge unit 61b and the fourth gas discharge unit 61d forms a nitrogen gas atmosphere near the engagement ends 11, 11 of the lid members 6D, 6E. to continue.

Next, as shown in FIG. 17 to FIG.
The lid members 6D and 6E are synchronized to move from the open position to the closed position, for example, from about half the open position to the closed position.
When D and 6E are closed, the supply of the inert gas from the gas discharge unit 52 for gas curtain formation and the gas suction unit 54
Is stopped, and the second gas discharge unit 61b and the fourth
Only by supplying the nitrogen gas from the gas discharge part 61d, a nitrogen gas atmosphere is formed near the engagement ends 11, 11 of the lid members 6D, 6E.

Thereafter, as shown in FIG.
When D and 6E are closed, a small amount of nitrogen gas is supplied from the second gas discharging portion 61b and the fourth gas discharging portion 61d to the space 5A.
And the space 5 formed between the liquid surface of the etching solution 4 in the processing tank 1 and the inner surfaces of the lid members 6D and 6E is set to a positive pressure. When a positive pressure can be formed only by evaporation of the etching solution 4, such supply of nitrogen gas is not required.

At the time of carrying out the wafer, the lid members 6D and 6E are opened and the processing tank 1 is opened at the open position as in the case of carrying in the wafer.
After the wafers 3,..., 3 in the etching solution 4 are taken out for each carrier 2, the lid members 6D, 6E are closed again.

When the opening degree of the lid members 6D and 6E is from 0 to 15 degrees, the inert gas injected from the second gas discharging part 61b and the fourth gas discharging part 61d for forming the inert gas atmosphere is formed. The flow rate is about 30 / min, and the lid member 6D,
When the opening degree of 6E is from 15 degrees to 90 degrees, the flow rate of the inert gas injected from the gas discharge unit 52 for forming a gas curtain is set to about 150 liter / min. When the wafers 3,..., 3 are taken in and out, that is, carried in and out, the gas curtain formation is stopped.
When the inert gas atmosphere is formed by the gas discharge part 61b and the fourth gas discharge part 61d, the total of both the second gas discharge part 61b and the fourth gas discharge part 61d is approximately 5 liter / min. In addition, in the suction section 54, the gas curtain is opened when the gas curtain is formed, while the gas curtain is stopped when the wafers 3,... The aperture is squeezed to open 10% to 10%, and 0% when the lid is at the closed position.

According to the sixth embodiment, the processing tank 1 can be opened without any special processing.
A conventional open-type processing tank according to the present embodiment can be configured by simply disposing a rectangular frame 50 having lid members 6D and 6E, a gas discharge unit 52 for forming a gas curtain, and a gas suction unit 54 on a. It can be easily improved to the open-close type processing tank 1.

When the opening 1a of the processing tank 1 is opened and closed by the lid members 6D and 6E, and when the opening 1a is opened, an inert gas is supplied from the gas discharging portions 52, 10b and 10d to form an inert gas atmosphere. Gas curtain 2 of an inert gas covering the vicinity of the surface of the etching solution in the processing tank 2
7, the etching solution 4 in the processing tank 1 is formed.
The gas outside the processing tank is prevented from coming into contact with the surface of the processing tank, and the evaporation of the etching solution 4 in the processing tank or the absorption of moisture in the gas outside the processing tank can be prevented even when the lid member is opened and closed. Therefore, a change in the etching rate can be minimized, and a stable etching rate can be maintained. In particular, when the lid members 6D and 6E are located at the open positions, the liquid surface of the etching solution 4 in the processing tank 1 is covered with the gas curtain 27 of the inert gas.
The gas outside the processing tank cannot come into contact with the etching solution 4, and the evaporation of the etching solution 4 or the absorption of moisture in the gas outside the processing tank can be reliably prevented even at the open positions of the lid members 6D and 6E. In addition, the change in the etching rate can be minimized.

Further, by providing lid members 6D and 6E in the processing tank 1 and making the pressure in the processing tank 1 positive from the outside of the processing tank 1 at the closed position of the lid members 6D and 6E, Gas does not enter the processing tank, the evaporation of the etching solution 4 in the processing tank or the absorption of moisture in the gas outside the processing tank can be prevented, and the change in the etching rate can be minimized. A stable etching rate can be maintained.

(Seventh Embodiment) An etching apparatus according to a seventh embodiment of the present invention is shown in FIG.
As shown in FIGS. 9 to 21, in the processing apparatus according to the sixth embodiment, the lid may be constituted by one plate-shaped lid member 6F instead of the two lid members 6D and 6E. Good. That is, one plate-shaped lid member 6F slides with respect to the processing tank 1 to be opened and closed, and the lid member 6F
On the inner surface on the open / close end side of F, for example, gas discharge portions 61e of four nozzles corresponding to the fourth gas discharge portions 61d are arranged, and a nitrogen gas supply path 62e is connected to the gas discharge portions 61e. On the other hand, for example, the gas discharge unit 61f of four nozzles corresponding to the second gas discharge unit 61b is
1e is disposed on the inner surface of the rectangular frame 50 so as to be staggered so as not to interfere with each other.
May be connected to a nitrogen gas supply path 62f. The relationship between the opening / closing operation of the lid member 6F and the gas supply operation in the seventh embodiment is basically the same as in the sixth embodiment, and the same functions and effects as in the sixth embodiment can be obtained.

(Eighth Embodiment) FIG. 2 shows an etching apparatus according to an eighth embodiment of the present invention.
As shown in FIGS. 3 to 24, in order to adjust the concentration change due to the deterioration of the etching solution accompanying the etching process, a circulation path for the etching solution (reference numeral 1 described below) is provided in the processing tank.
b, 1c, 94, 93, 95, 96, etc.) and an etching solution having the same component as the etching solution used in the etching process is supplied through a replenishment path (reference numbers 90, 91, 92 described below). It may be supplied into the circulation path for use, mixed with the circulating etching solution, and returned to the processing tank again.

That is, the processing tank 1 is replaced with the inner processing tank body 1.
b, and an outer processing tank 1c that houses the inner processing tank body 1b therein, and receives the etching solution 4a overflowing from the inner processing tank body 1b into the outer processing tank 1c. Then, the etching solution 4a overflowing from the inner processing tank body 1b and received in the outer processing tank 1c.
From the bottom of the outer processing tank 1c to the etching liquid circulation path 93.
Through a filter 95 for removing dirt in the liquid by a circulation pump 94 through the inner processing tank main body 1b.
Is supplied to the etching liquid 4 in the inner processing tank main body 1b from a circulating liquid supply section 96 disposed at the bottom of the tank. Thus, a circulation path of the etching solution 4 is formed. On the other hand, the concentration of the etching solution 4 in the inner processing tank body 1b is measured by a concentration measuring device 97.
The etching liquid, which is a chemical solution, is supplied from the inner processing tank main body 1b to the outer processing tank 1c by the replenishment supply nozzle 92 through the etching liquid replenishment passage 90 by driving the metering pump 91 based on the measurement result. Is replenished to the portion that overflows or to the outer processing tank 1c. As shown in FIGS. 24A and 24B, the replenishment supply nozzle 92
May be arranged at a position where a dimension t (for example, several millimeters) is inserted into the inside of the inner processing tank body 1b from the edge of the inner processing tank body 1b, or the bottom portion of the inner processing tank body 1b is circulated from the position. It can be provided at any position in the etching liquid circulation path in a range up to the liquid supply section 96.

According to the above configuration, when the concentration of the etching solution changes due to the deterioration of the etching solution due to the etching process, the concentration of the etching solution 4 in the inner processing tank main body 1b measured by the concentration measuring device 97. Is outside the permissible range, the calculation unit in the control device 19 calculates the amount of the etchant to be replenished, and the metering pump 91 is driven by the replenishment amount based on the calculation result, and passes through the etchant replenishment passage 90. The etching solution, which is a chemical, is supplied from the inner processing tank body 1b to the outer processing tank
The part which overflows to c or the outer processing tank 1c is replenished.

According to the eighth embodiment, even if the concentration of the etching solution changes due to the deterioration of the etching solution due to the etching process, the concentration is restored to a predetermined concentration range by replenishing the etching solution. And deterioration of the etching solution can be delayed. Therefore, the etching apparatus of the first to seventh embodiments can prevent the gas outside the processing tank from being in contact with the etching solution, thereby preventing the etching solution from deteriorating due to moisture absorption or evaporation of components in the etching solution. By delaying the deterioration of the etching solution due to the etching process by the replenishing operation of the solution, the life of the etching solution can be prolonged, and the etching process efficiency can be further improved.

In each of the above embodiments, the operation of the blower may be stopped in the suction operation by the suction unit except at the time of forming the gas curtain. When it is desired not to disturb unnecessarily, the suction force may be significantly reduced except at the time of forming the gas curtain.

It is to be noted that by appropriately combining any of the above-described various embodiments, the effects of the respective embodiments can be exhibited.

[0126]

According to the present invention, when the opening of the processing tank is opened by the lid, an inert gas is supplied to form an inert gas atmosphere, or the vicinity of the surface of the etching solution in the processing tank is reduced. Forming a gas curtain of an inert gas that covers the processing tank, or forming an inert gas atmosphere and forming a gas curtain of an inert gas that covers the vicinity of the surface of the etching solution in the processing tank. It is possible to prevent gas outside the processing tank from coming into contact with the surface of the etching solution in the inside, and to prevent evaporation of the etching solution in the processing tank or moisture absorption in the gas outside the processing tank. As a result, a change in the etching rate can be minimized, and a stable etching rate can be maintained. Further, by maintaining this state even when the lid is opened and closed, it is possible to prevent the gas outside the processing tank from coming into contact with the surface of the etching liquid in the processing tank, and the etching liquid in the processing tank can be prevented from coming into contact with the gas. It is possible to prevent evaporation or absorption of moisture in the gas outside the processing tank, minimize the change in the etching rate, and maintain a stable etching rate.

In particular, when the lid is at the open position, if the liquid surface of the etching solution in the processing tank is covered with a gas curtain of an inert gas, gas outside the processing tank may come into contact with the etching liquid. However, even when the lid is open, evaporation of the etchant or absorption of moisture in the gas outside the processing tank can be reliably prevented, and a change in the etching rate can be minimized.

Further, by setting the pressure inside the processing tank to a positive pressure from outside the processing tank at the closed position of the lid, the gas outside the processing tank does not enter the processing tank, and the etching solution in the processing tank is evaporated or evaporated. It is possible to prevent the absorption of moisture in the gas outside the processing tank, minimize the change in the etching rate, and maintain a stable etching rate.

Further, the processing tank is not subjected to any special processing, and only a rectangular frame having a lid, a gas discharge part for forming a gas curtain, and a gas suction part is disposed on the opening of the processing tank. In addition, the conventional open type processing tank can be easily improved to the lid opening / closing type processing tank according to the present invention.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of an etching apparatus according to a first embodiment of the present invention in a state where a lid is in a closed position. In the following drawings, the processing tank is shown in a transparent manner.

FIG. 2 shows a state in which the lid starts opening from a closed position.
It is explanatory drawing of the etching processing apparatus.

FIG. 3 is an explanatory diagram of the etching apparatus of FIG. 1 in a state where the lid is in an open position.

FIG. 4 is an explanatory diagram showing a piping system of the etching processing apparatus of FIG. 1;

FIG. 5 is a perspective explanatory view of a lid at a closed position of the etching apparatus of FIG. 1;

FIG. 6 is an explanatory diagram of an etching processing apparatus according to a second embodiment of the present invention in a state where a lid is in a closed position.

FIG. 6 shows a state in which the lid has begun to open from a closed position.
It is explanatory drawing of the etching processing apparatus.

FIG. 8 is an explanatory diagram of the etching apparatus of FIG. 6 in a state where the lid is in an open position.

9 is an explanatory diagram showing a piping system of the etching apparatus of FIG.

FIG. 10 is an explanatory diagram of an etching apparatus according to a third embodiment of the present invention with a lid in an open position.

FIG. 11 is an explanatory view of an etching apparatus according to a fourth embodiment of the present invention with a lid in a closed position.

FIG. 12 is an explanatory view of the etching apparatus of FIG. 11 in a state where the lid starts opening from a closed position.

FIG. 13 is an explanatory view of the etching apparatus of FIG. 11 in a state where the lid is in an open position.

FIG. 14 is an explanatory diagram of an etching processing apparatus according to a fifth embodiment of the present invention in a state where a lid is in a closed position.

15 is an explanatory diagram of the etching apparatus of FIG. 14 in a state where the lid is in an open position.

FIG. 16 is an explanatory diagram of an etching apparatus according to a sixth embodiment of the present invention in a state where a lid is in a closed position.

FIG. 17 is an explanatory view of the etching apparatus of FIG. 16 in a state where the lid has begun to open from a closed position.

18 is an explanatory view of the etching apparatus of FIG. 16 in a state where the lid is in an open position.

FIG. 19 is an explanatory view of an etching apparatus according to a seventh embodiment of the present invention in a state where a lid is in a closed position.

20 is an explanatory diagram of a nozzle arrangement state of the etching apparatus of FIG. 19;

FIG. 21 is an explanatory view of the etching apparatus of FIG. 19 in a state where the lid has begun to open from a closed position.

FIG. 22 is an explanatory view of the etching apparatus of FIG. 19 in a state where the lid is in an open position.

FIG. 23 is an explanatory diagram of an etching apparatus according to an eighth embodiment of the present invention in a state where a lid is in a closed position.

24A and 24B are partially enlarged explanatory views of the etching apparatus of FIG. 23, respectively.

FIG. 25 is an explanatory diagram showing an example of the operation timing of each ejection unit and suction unit in the first embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Processing tank, 1a ... Opening, 1b ... Inner processing tank main body, 1c
... Outer processing tank, 2 ... Carrier, 3 ... Wafer, 4 ... Etching liquid, 5 ... Space, 6A, 6B, 6C, 6D, 6E, 6
F: lid member, 7: discharge path, 10a: first gas discharge part, 1
0b: second gas discharge unit, 10c: third gas discharge unit, 10
d 4th gas discharge part, 12a, 12b, 12c, 12d
... nitrogen gas supply path, 13 ... gas suction part, 14 ... gas discharge path, 15 ... nitrogen gas adjustment valve, 16 ... nitrogen gas supply flow meter, 17 ... nitrogen gas supply flow adjustment valve, 18 ... nitrogen gas supply On-off valve, 19 ... Control device, 20 ... Pressure measuring device, 2
DESCRIPTION OF SYMBOLS 1 ... On-off valve for etching solution discharge, 22 ... Flow control valve for gas discharge, 23 ... On-off valve for gas discharge, 24 ... Blower, 2
5 supply channel, 26 supply channel, 27 gas curtain, 28
... gap, 31 ... gas discharge part for gas curtain formation, 32 ...
Gas suction part, 33: nitrogen gas supply path, 34: gas discharge path, 37: nitrogen gas supply flow control valve, 38: nitrogen gas supply open / close valve, 39: supply path, 40: supply path, 50: rectangular frame Body, 50a: opening, 51: overflow discharge path, 52: gas discharge section for gas curtain formation, 53: nitrogen gas supply path, 54: gas suction section, 55: gas discharge path, 5
6 ... Overflow opening, 60 ... Bracket, 61b
... second gas discharge part, 61d ... fourth gas discharge part, 68 ... gap, 90 ... etchant replenishment path, 91 ... metering pump, 9
2: Replenishment supply nozzle, 93: etchant circulation path, 94
... circulation pump, 95 ... filter, 96 ... circulating fluid supply unit,
97: concentration measuring instrument.

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Sadao Takemura 6-2 Imakokufu-cho, Yamatokoriyama-shi, Nara Prefecture F-term in Toho Chemical Co., Ltd. 4K057 WG03 WM03 WM20 5F043 EE03 EE23 EE24 EE27 EE40 GG10

Claims (23)

[Claims] 1. A wafer (3) using an etching solution (4).
A processing tank (1) having a wafer loading / unloading opening (1a) for holding the etching liquid; a closed position for closing the opening of the processing tank; and an open position for opening the opening. (6A, 6B, 6C, 6)
D, 6E, 6F), when the opening of the processing tank is opened by the lid, an inert gas is supplied to the vicinity of the opening in the processing tank to form an inert gas atmosphere, and the processing tank is formed. A gas supply device that suppresses contact between the etching solution in the inside and a gas outside the processing tank. 2. A wafer (3) using an etching solution (4).
A processing tank (1) having a wafer loading / unloading opening (1a) for holding the etching liquid; a closed position for closing the opening of the processing tank; and an open position for opening the opening. (6A, 6B, 6C, 6)
D, 6E, 6F), and when the opening of the processing tank is opened by the lid, a gas curtain of an inert gas is formed to cover the vicinity of the surface of the etching solution in the processing tank to form a gas curtain of the inert gas. A gas supply device for suppressing the contact between the etching solution and a gas outside the processing tank. 3. The lid (6A, 6B, 6C, 6D, 6)
E, 6F), when the wafer is taken in and out through the opening with the opening being opened, the inert gas is supplied by the gas supply device to form the inert gas atmosphere near the opening. 3. The etching processing apparatus according to claim 2, wherein the gas supply device stops forming a gas curtain of an inert gas covering the vicinity of the surface of the etching liquid in the processing tank. 4. The cover (6A, 6B, 6C, 6D, 6)
E, 6F), when the opening is opened by supplying the inert gas by the gas supply device to form the inert gas atmosphere in the vicinity of the opening, The etching apparatus according to any one of claims 1 to 3, wherein a gas curtain of an inert gas covering the vicinity of the surface is formed by the gas supply device. 5. The lid (6A, 6B, 6C, 6D, 6)
E, 6F), when the opening is opened by opening the opening, when the opening is started, the inert gas is supplied by the gas supply device to form the inert gas atmosphere near the opening. The etching apparatus according to any one of claims 1 to 3, wherein the gas supply device forms a gas curtain of an inert gas that covers a vicinity of a surface of the etching solution in the processing tank. 6. When the opening of the processing tank is closed by the lid, a space (5) formed by the liquid level of the etching solution in the processing tank and the inner surface of the lid is a positive pressure. The etching apparatus according to claim 1. 7. The lid has two lid members (6A, 6B) each of which has a base end (9) rotatably supported by the processing tank, and each base end of each of the lid members. (1)
The etching apparatus according to any one of claims 1 to 6, wherein 1) is engaged with each other at the closed position of the lid to close the opening of the processing tank. 8. The lid comprises two lid members (6D, 6D) each having a base end (9) slidably supported by the processing tank.
E), and the engaging ends (11) facing the respective base ends of the lid members engage with each other at the closed position of the lid to close the opening of the processing tank. The etching apparatus according to claim 1. 9. The gas supply device is arranged on a surface of the lid at the closed position on the processing tank side, and supplies the gas toward the engaging end of the lid member. An inert gas atmosphere forming gas discharge unit (10b, 10c, 10d, 6) for forming an inert gas atmosphere.
1b, 61d), a gas discharge part (10a) for forming a gas curtain, which is disposed on the surface of the lid at the processing tank side at the closed position and discharges the gas in a planar manner. Is disposed on the processing tank side surface of the lid, and sucks the gas discharged in a planar manner from the gas curtain forming gas discharge section to the etching liquid level in the processing tank. And a gas suction unit (13) for forming a gas curtain. When each lid member starts moving from the closed position to the open position of the lid, the gas discharge unit for forming the inert gas atmosphere forms the gas curtain. A gas is supplied toward the engaging end of the lid member to form the inert gas atmosphere, and the gas is discharged from the gas discharge part for forming a gas curtain before being positioned at the open position of the lid. And use the gas suction section to Etching apparatus according to claim 7 or 8 so as to form a gas curtain to the liquid surface of the etching liquid of the processing tank by. 10. The gas supply device is arranged on a surface of the lid at the closed position on the processing tank side, and supplies the gas toward the engagement end of the lid member. An inert gas atmosphere forming gas discharge unit (10b, 10c, 10d, 6) for forming an inert gas atmosphere.
1b, 61d, 61e), a gas curtain forming gas discharge section (31, 52) disposed on the processing tank side and discharging the gas in a planar shape, disposed on the processing tank side, and A gas suction unit (32, 54) for sucking the gas discharged from the gas curtain forming gas discharge unit in a planar shape and forming a gas curtain with respect to the level of the etching liquid in the processing tank; When each lid member starts moving from the closed position to the open position of the lid, the gas is directed from the inert gas atmosphere forming gas discharge unit toward the engagement end of the lid member. Supplying the inert gas atmosphere, and discharging the gas from the gas discharge unit for gas curtain formation and sucking the gas by the gas suction unit before being positioned at the open position of the lid. The above etchant in Etching apparatus according to claim 7 or 8 so as to form a gas curtain to the liquid surface. 11. A circulation path (1b, 1c, 94, 93, 95, circulating path) for circulating and supplying the etching solution in the processing tank.
96); a concentration measuring device (97) for measuring the concentration of the etching solution in the processing tank; and a replenishment route (90, 91, 92) for replenishing the circulation route with an etching solution having the same component as the etching solution. Further comprising: replenishing the circulation path with an etchant having the same component as the etchant from the replenishment path based on the concentration of the etchant in the processing tank measured by the concentration measuring device. 11. The etching apparatus according to any one of items 10 to 10. 12. A wafer (3) is loaded into the processing tank through a wafer loading / unloading opening (1a) of the processing tank (1) holding the etching liquid (4), and the etching liquid in the processing tank is loaded into the processing tank. And etching the wafer through the opening for loading and unloading the wafer from the processing tank, and then carrying out the wafer to the outside of the processing tank by the lid (6A, 6B, 6C, 6D, 6E, and 6F) are moved from the closed position to the open position, and when the opening of the processing tank is open, an inert gas is supplied to the vicinity of the opening in the processing tank to form an inert gas atmosphere. The contact between the etching solution in the processing tank and a gas outside the processing tank is suppressed. 13. A wafer (3) is loaded into said processing tank through an opening (1a) for taking in and out of a wafer of said processing tank (1) holding said etching liquid (4), and said etching liquid in said processing tank is stored in said processing tank. And etching the wafer through the opening for loading and unloading the wafer from the processing tank, and then carrying out the wafer to the outside of the processing tank by the lid (6A, 6B, 6C, 6D, 6E, and 6F) move from the closed position to the open position to form a gas curtain of an inert gas that covers the vicinity of the surface of the etching liquid in the processing tank when the opening of the processing tank is opened. Wherein the contact between the etching solution in the processing tank and the gas outside the processing tank is suppressed. 14. The lid (6A, 6B, 6C, 6D, 6)
E, 6F), when the wafer is taken in and out through the opening with the opening opened, the inert gas is supplied to form the inert gas atmosphere near the opening, and the processing bath is 14. The etching apparatus according to claim 13, wherein the formation of a gas curtain of an inert gas covering the vicinity of the liquid surface of the etching liquid is stopped. 15. The lid (6A, 6B, 6C, 6D, 6).
E, 6F), the opening is opened by supplying the inert gas to form the inert gas atmosphere near the opening and to cover the processing tank near the liquid surface of the etching solution. The etching method according to any one of claims 12 to 14, wherein a gas curtain of the active gas is formed. 16. The lid (6A, 6B, 6C, 6D, 6).
E, 6F), when opening the opening, when opening the opening, supplying the inert gas to form the inert gas atmosphere in the vicinity of the opening. 15. A gas curtain of an inert gas which covers the vicinity of the surface of the etching solution.
The etching method according to any one of the above. 17. When the opening of the processing tank is closed by the lid, the space (5) formed by the liquid level of the etching solution in the processing tank and the inner surface of the lid is a positive pressure. An etching method according to claim 12. 18. Two lid members (6) constituting the lid and each base end (9) being rotatably supported by the processing tank.
A, 6B), when the lid is moved between the closed position and the open position, and when the lid is located at the open position, the inert gas is supplied to the processing tank. The etching method according to any one of claims 12 to 17, wherein contact between the etching solution inside and the gas outside the processing tank is suppressed. 19. Two lid members (6) constituting the lid and each base end (9) being rotatably supported by the processing tank.
D, 6E), when the lid is moved between the closed position and the open position, and when the lid is at the open position, the inert gas is supplied to the inside of the processing tank. 18. The etching method according to claim 12, wherein contact between the etching solution and a gas outside the processing tank is suppressed. 20. An inert gas atmosphere forming means disposed on the processing tank side surface of the lid at the closed position from the time when each lid member starts moving from the closed position of the lid to the open position. Gas discharge unit (10b, 10c, 10d, 61
b, 61d) to supply the gas toward the engaging end of the lid member to form the inert gas atmosphere, while before each lid member is located at the open position of the lid, The gas is discharged from the gas discharge part (10a) for gas curtain formation arranged on the surface of the lid on the processing tank side at the closed position, and the gas at the closed position is on the processing tank side of the lid at the closed position. By the gas suction part (13) arranged on the surface of
20. The gas curtain according to claim 18 or 19, wherein the gas discharged in a planar manner from the gas discharge part for gas curtain formation is sucked to form a gas curtain on the liquid surface of the etching liquid in the processing tank. Etching method. 21. An inert gas atmosphere forming surface disposed on the processing tank side surface of the lid at the closed position from the time when each lid member starts moving from the closed position of the lid to the open position. Gas discharge unit (10b, 10c, 10d, 61
b, 61d, 61e) to supply the gas toward the engagement end of the lid member to form the inert gas atmosphere, while the respective lid members are positioned at the open position of the lid. , A gas discharge unit for gas curtain formation (3
, 52), the gas is discharged in a plane from the gas curtain forming gas discharge section by the gas suction section (32, 54) disposed on the processing tank side. 20. The etching processing method according to claim 18, wherein a gas curtain is formed on a liquid surface of the etching liquid in the processing tank by sucking the gas. 22. The concentration of the etching solution in the processing tank is measured by a concentration measuring instrument (97), and the concentration of the etching solution in the processing tank is measured based on the concentration of the etching solution in the processing tank measured by the concentration measuring instrument. A circulation path (1b, 1c, 94, 93,
95, 96), a replenishment path (90, 9) for replenishing the circulation path with an etching liquid having the same component as the etching liquid.
22. The etching method according to claim 12, wherein an etching solution having the same component as that of the etching solution is supplied from (1, 92). 23. A rectangular frame (50) having the lid, the gas discharge part (52) for forming a gas curtain, and the gas suction part (54) is arranged on the opening of the processing tank,
The etching apparatus according to any one of claims 1 to 8, wherein the opening (50a) of the rectangular frame is the opening of the processing tank.