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JP3132210B2 - Gas sensor - Google Patents

Gas sensor

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Publication number
JP3132210B2
JP3132210B2 JP04359631A JP35963192A JP3132210B2 JP 3132210 B2 JP3132210 B2 JP 3132210B2 JP 04359631 A JP04359631 A JP 04359631A JP 35963192 A JP35963192 A JP 35963192A JP 3132210 B2 JP3132210 B2 JP 3132210B2
Authority
JP
Japan
Prior art keywords
support substrate
gas sensor
heating element
gas
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04359631A
Other languages
Japanese (ja)
Other versions
JPH06201628A (en
Inventor
幸弘 福田
Original Assignee
東陶機器株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東陶機器株式会社 filed Critical 東陶機器株式会社
Priority to JP04359631A priority Critical patent/JP3132210B2/en
Publication of JPH06201628A publication Critical patent/JPH06201628A/en
Application granted granted Critical
Publication of JP3132210B2 publication Critical patent/JP3132210B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は加熱体を有するガスセン
サの素子構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an element structure of a gas sensor having a heating element.

【0002】[0002]

【従来の技術】従来の加熱体を有するガスセンサは、例
えば特開平1−145561号公報に開示されているよ
うに、加熱体とガス感応膜が支持基板を挟むよう構成さ
れ、支持基板を加熱する必要のあるものや、特開平1−
313751号公報又は特開平1−167645号公報
に開示されているように、支持基板上に加熱体を取着
し、この加熱体の上にガス感応膜を取着するよう構成さ
れ、支持基板を加熱する必要がないものがあった。
2. Description of the Related Art A conventional gas sensor having a heating element has a structure in which a heating element and a gas-sensitive film sandwich a support substrate and heat the support substrate, as disclosed in, for example, Japanese Patent Application Laid-Open No. 1-145561. What is necessary,
As disclosed in Japanese Patent No. 313751 or JP-A-1-167645, a heating element is mounted on a support substrate, and a gas-sensitive film is mounted on the heating element. Some did not need to be heated.

【0003】図7に従来のガスセンサの一例を示し、こ
のガスセンサについて説明する。従来のガスセンサ10
0は支持基板101の上に白金等を用いた加熱体102
を取着し、この加熱体102を熱伝導性の高い絶縁体1
03等で被覆し、更にこの絶縁体103の上に一対の電
極105,106及び金属酸化物を用いたガス感応膜1
07を取着して成る。
FIG. 7 shows an example of a conventional gas sensor, and this gas sensor will be described. Conventional gas sensor 10
Reference numeral 0 denotes a heating element 102 made of platinum or the like on a support substrate 101.
The heating element 102 is attached to the insulator 1 having high thermal conductivity.
03, and a pair of electrodes 105 and 106 and a gas-sensitive film 1 using a metal oxide on the insulator 103.
07.

【0004】この構成により加熱体102が加熱され、
この熱が絶縁体103等を介してガス感応膜107に伝
わると、ガス感応膜107の内部抵抗が外部のガスを感
知することにより所定の値に変化する。従って、図示し
ない電圧変換回路を用いてこの抵抗値を電極105,1
06を介して電圧値に変換すれば、所定の電圧からガス
を検知できる。
[0004] With this configuration, the heating element 102 is heated,
When this heat is transmitted to the gas-sensitive film 107 via the insulator 103 and the like, the internal resistance of the gas-sensitive film 107 changes to a predetermined value by sensing an external gas. Therefore, this resistance value is converted to the electrodes 105 and 1 by using a voltage conversion circuit (not shown).
If the value is converted into a voltage value via the signal line 06, the gas can be detected from a predetermined voltage.

【0005】[0005]

【発明が解決しようとする課題】しかし、従来のガスセ
ンサ100は、加熱体102で発生した熱がガス感応膜
107のみならず支持基板101にも拡散するため熱効
率が低下し、このため消費電力が上昇し、従って、ガス
感応膜107を所定の温度に安定させるに要する時間
(応答時間)は比較的長かった。この課題を解決するた
めには、支持基板101を薄くし、加熱部分Sの支持基
板101aの熱容量を小さくすればよいが、反面、支持
基板101の機械的強度が下がってしまうという欠点が
あった。又、加熱体102よりガス感応膜107以外に
漏れる輻射熱に対しては、特に対策がなされていなかっ
た。そこで本発明の目的は、応答時間を短くし、消費電
力を少なくし、且つ、機械的強度を向上させたガスセン
サを提供することにある。
However, in the conventional gas sensor 100, the heat generated by the heating element 102 diffuses not only into the gas-sensitive film 107 but also into the support substrate 101, so that the heat efficiency is reduced and the power consumption is reduced. Accordingly, the time required for stabilizing the gas-sensitive film 107 at a predetermined temperature (response time) was relatively long. To solve this problem, the thickness of the supporting substrate 101 may be reduced to reduce the heat capacity of the supporting substrate 101a in the heated portion S, but there is a disadvantage that the mechanical strength of the supporting substrate 101 is reduced. . Further, no measures have been taken against radiant heat leaking from the heating element 102 to portions other than the gas-sensitive film 107. Accordingly, it is an object of the present invention to provide a gas sensor that has a reduced response time, reduced power consumption, and improved mechanical strength.

【0006】[0006]

【課題を解決するための手段】前記課題を解決するため
に本発明は、第1支持基板上に加熱体を取着し、この加
熱体上に絶縁体及び一対の電極を備えたガス感応膜を取
着したガスセンサにおいて、前記加熱体の取着部分に当
たる前記第1支持基板の上面に凹部を形成するととも
に、前記第1支持基板と前記加熱体との間に第2支持基
板を挟着した。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a gas-sensitive film having a heater mounted on a first support substrate and having an insulator and a pair of electrodes on the heater. In the gas sensor attached, a concave portion is formed on the upper surface of the first support substrate corresponding to the attachment portion of the heating element, and a second support substrate is sandwiched between the first support substrate and the heating element. .

【0007】前記第1支持基板には前記凹部に代えて貫
通孔を形成してもよい。
[0007] A through hole may be formed in the first support substrate instead of the recess.

【0008】そして、前記加熱体の取着部分に当たる前
記第2支持基板の下面に金属等の反射部材を取着した。
[0008] Then, a reflecting member such as a metal is attached to the lower surface of the second support substrate which corresponds to the attaching portion of the heating element .

【0009】[0009]

【作用】第1支持基板の上面に凹部を形成し、この凹部
を第2支持基板で覆い、この第2支持基板上に加熱体を
取着することにより、第1支持基板に拡散する加熱体の
熱が少なくなるとともに、第1支持基板の機械的強度が
向上する。
The heating element diffuses into the first support substrate by forming a depression on the upper surface of the first support substrate, covering the depression with the second support substrate, and attaching the heating element on the second support substrate. And the mechanical strength of the first support substrate is improved.

【0010】前記凹部を貫通孔にすることにより加工が
比較的容易になる。
By making the recess a through-hole, processing becomes relatively easy.

【0011】第2支持基板の下面に反射部材を取着する
ことにより、加熱体から下方に発せられる熱が反射され
る。
By attaching the reflection member to the lower surface of the second support substrate, heat generated from the heating body downward is reflected.

【0012】[0012]

【実施例】以下、本発明の実施例について添付図面を参
照しながら説明する。図1において本発明のガスセンサ
1は上面に凹部2aを形成した第1支持基板2と、エポ
キシ樹脂等の接着剤3で前記第1支持基板2上に取着さ
れた比較的薄いガラス(例えば20ミクロン乃至100
ミクロン)を用いた第2支持基板4と、この第2支持基
板4の下面に前記凹部2aの開口に面して取着された金
属膜5と、前記第2支持基板4上に取着された加熱体6
と、この加熱体6を熱伝導性の高い樹脂等で被覆しこの
樹脂上に取着した絶縁体8と、この絶縁体8上に取着し
た一対の電極9,10及びガス感応膜11とにより構成
される。
Embodiments of the present invention will be described below with reference to the accompanying drawings. In FIG. 1, a gas sensor 1 of the present invention includes a first support substrate 2 having a concave portion 2a formed on an upper surface thereof, and a relatively thin glass (for example, 20) attached on the first support substrate 2 with an adhesive 3 such as epoxy resin. Micron to 100
Micron), a metal film 5 attached to the lower surface of the second support substrate 4 facing the opening of the recess 2a, and a metal film 5 attached to the second support substrate 4. Heating body 6
And an insulator 8 covering the heating element 6 with a resin having high thermal conductivity and attached on the resin, and a pair of electrodes 9 and 10 and a gas sensitive film 11 attached on the insulator 8. It consists of.

【0013】次に、このガスセンサ1の製造過程につい
て説明する。図2において、前記第1支持基板2にはガ
ラスに一般に用いられるフォトリソグラフィ法により前
記凹部2aに相当する部分のみ開口したフォトレジスト
を形成し、フッ化水素酸の混酸でエッチングして前記凹
部2aを形成する。エッチングの深さは略1乃至100
ミクロンである。又、前記第1支持基板2の厚さは略3
00乃至1100ミクロン。
Next, a manufacturing process of the gas sensor 1 will be described. In FIG. 2, a photoresist having an opening only at a portion corresponding to the concave portion 2a is formed on the first support substrate 2 by a photolithography method generally used for glass, and is etched with a mixed acid of hydrofluoric acid to form the concave portion 2a. To form The etching depth is about 1 to 100
Micron. The thickness of the first support substrate 2 is approximately 3
00-1100 microns.

【0014】次に、図3に示すように前記第1支持基板
2に前記第2支持基板4を取着するとともに前記第2支
持基板4の下面には蒸着法又は無電解メッキ等の方法に
より輻射熱反射用の金属膜5を付着させる。又、この金
属膜5は前記凹部2aに入る大きさに加工する。尚、前
記金属膜5は厚膜印刷で形成することも可能である。
又、前記第2支持基板4全体をフッ化水素の混酸でエッ
チングして前記ガスセンサ1全体を薄くすることも可能
である。
Next, as shown in FIG. 3, the second support substrate 4 is attached to the first support substrate 2, and the lower surface of the second support substrate 4 is formed by a method such as vapor deposition or electroless plating. A metal film 5 for radiant heat reflection is attached. The metal film 5 is processed to have a size that fits into the recess 2a. Incidentally, the metal film 5 can be formed by thick film printing.
Further, it is also possible to make the entire gas sensor 1 thin by etching the entire second support substrate 4 with a mixed acid of hydrogen fluoride.

【0015】次に、図4に示すように前記加熱体6を前
記金属膜5を付着した領域に合せて前記第2支持基板4
上に取着する。このように前記金属膜5上方に前記加熱
体6を取着することにより、前記加熱体6から発せられ
た輻射熱を前記金属膜5で反射させることができる。従
って、輻射熱を有効に利用できることから消費電力を節
約することができる。尚、前記加熱体6の材質は、例え
ば、Si,W,Ti,Cu,Ni,Cr,Pt,Pd,
Au,Ag又はその合金等を用いることが可能である
が、エレクトロマイクレーションに強く、比抵抗の高い
物質の方が好ましい。これらの材質によれば加熱体に流
す電流は比較的少なくて済むので、この加熱体に接続す
る線材自体の電圧降下も殆ど考慮する必要がなく、従っ
て、比較的細い線材を用いることができ、費用及び消費
電力の低減に好適である。
Next, as shown in FIG. 4, the heating element 6 is aligned with the area where the metal film 5 is attached, and
Attach on top. By attaching the heating element 6 above the metal film 5 in this manner, the radiant heat generated from the heating element 6 can be reflected by the metal film 5. Therefore, power consumption can be saved because radiant heat can be used effectively. The material of the heating element 6 is, for example, Si, W, Ti, Cu, Ni, Cr, Pt, Pd,
Au, Ag or an alloy thereof can be used, but a substance that is strong in electromicrography and has high specific resistance is preferable. According to these materials, the current flowing through the heating element can be relatively small, so it is almost unnecessary to consider the voltage drop of the wire itself connected to the heating element, and therefore, a relatively thin wire can be used, It is suitable for reducing cost and power consumption.

【0016】次に、図1に示すように、例えば、SiO
2,Si34,TiO2,Ta25,Al23等のセラミッ
ク素材、又はガラス及びポリイミド等の樹脂で構成され
た絶縁体8を取着する。この絶縁体8として熱伝導性の
比較的高いもの、及び絶縁性を維持できる範囲内で厚さ
の薄いものを用いることが好ましい。本実施例ではスパ
ッタリング方式にて前記SiO2を0.3ミクロンの厚
みに加熱部分Nを残してフッ化水素の混酸でエッチング
した。これは、前記絶縁体8を通して熱が拡散するのを
防ぐためである。
Next, as shown in FIG.
2 , an insulator 8 made of a ceramic material such as Si 3 N 4 , TiO 2 , Ta 2 O 5 , Al 2 O 3 or a resin such as glass and polyimide is attached. It is preferable to use an insulator 8 having a relatively high thermal conductivity and an insulator having a small thickness as long as the insulation can be maintained. In this embodiment, the SiO 2 was etched by a sputtering method with a mixed acid of hydrogen fluoride except for a heated portion N to a thickness of 0.3 μm. This is to prevent heat from diffusing through the insulator 8.

【0017】次に、前記絶縁体8上に前記一対の電極
9,10及びガス感応膜11を取着する。前記電極9,
10として本実施例ではTiを0.3ミクロンの厚さに
形成して用いたが、他の材料としてW,Ni,Al,C
u,Ag,Au,Pt,Pd,Cr又はこれらの合金等
を用いてもよい。又、前記ガス感応膜11として本実施
例ではSiO2を用いたが他の金属酸化物を用いてもよ
い。
Next, the pair of electrodes 9, 10 and the gas-sensitive film 11 are attached on the insulator 8. The electrode 9,
In this embodiment, Ti is formed to have a thickness of 0.3 μm, but W, Ni, Al, C are used as other materials.
u, Ag, Au, Pt, Pd, Cr, or an alloy thereof may be used. In this embodiment, SiO 2 is used as the gas-sensitive film 11, but another metal oxide may be used.

【0018】尚、図5に示すように前記第1支持基板2
には前記凹部2aの代りに貫通孔2bを形成してもよ
い。貫通孔2bにすることにより加工が比較的容易にな
り加工費用の低減が可能となる。又、前記第1及び第2
支持基板2,4を取着するのに接着剤3を用いたが、接
着剤3に限定するものではなく、例えば図示しない電極
接合や熱による接合を用いてもよい。又、前記第1支持
基板2としてガラスを用いたが、ガラスに限定するもの
ではなく、例えばSiのウェハ、ガラスエポキシ基板等
を用いてもよい。又、前記第2支持基板4にもガラスを
用いたが、前記加熱体 6の温度に耐える限り、例えば
ポリイミド、PETフィルム等の樹脂を用いてもよい。
As shown in FIG. 5, the first support substrate 2
Alternatively, a through hole 2b may be formed instead of the concave portion 2a. By forming the through holes 2b, the processing is relatively easy, and the processing cost can be reduced. In addition, the first and second
Although the adhesive 3 is used to attach the support substrates 2 and 4, the invention is not limited to the adhesive 3. For example, electrode bonding or heat bonding (not shown) may be used. Although glass is used as the first support substrate 2, the present invention is not limited to glass. For example, a Si wafer, a glass epoxy substrate, or the like may be used. Although glass is also used for the second support substrate 4, a resin such as polyimide or PET film may be used as long as it can withstand the temperature of the heating body 6.

【0019】本発明に係るガスセンサの時間対温度特性
の一例を図6に示す。本測定は前記感応膜11の代りに
サーミスタを設けて測定したものである。図6によれ
ば、本発明に係るガスセンサの特性T1は従来のガスセ
ンサの特性T2より略1.5秒立上がりが早いことが分
る。又、安定状態における温度は略100℃であり、消
費電力は従来のガスセンサが50mWであるのに対し、
本発明に係るガスセンサは10mWと大幅に少なくする
ことができた。
FIG. 6 shows an example of the time-temperature characteristic of the gas sensor according to the present invention. This measurement is performed by providing a thermistor instead of the sensitive film 11. According to FIG. 6, it can be seen that the characteristic T1 of the gas sensor according to the present invention rises about 1.5 seconds earlier than the characteristic T2 of the conventional gas sensor. The temperature in the stable state is about 100 ° C., and the power consumption is 50 mW for the conventional gas sensor,
The gas sensor according to the present invention was significantly reduced to 10 mW.

【0020】[0020]

【発明の効果】第1支持基板に凹部を形成したので基板
の熱容量が下がる。従って、加熱体から基板に伝わる熱
が少なくなり応答時間が短縮される。
The heat capacity of the substrate is reduced because the concave portion is formed in the first support substrate. Therefore, heat transmitted from the heating body to the substrate is reduced, and the response time is shortened.

【0021】凹部の代りに貫通孔を形成することにより
工数及び費用の節減を図ることが可能となる。
By forming a through hole in place of the concave portion, it is possible to reduce man-hours and costs.

【0022】第2支持基板の下面に反射部材を取着する
ことにより、加熱体から下方に発せられる熱が反射され
るので熱効率を上げることができ、従って消費電力の低
減が可能となる。
By attaching the reflecting member to the lower surface of the second support substrate, the heat generated downward from the heating body is reflected, so that the thermal efficiency can be increased, and the power consumption can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係るガスセンサの平面図及びM−M断
面図である。
FIG. 1 is a plan view and a cross-sectional view taken along line MM of a gas sensor according to the present invention.

【図2】同ガスセンサの製造過程における平面図及びM
−M縦断面図である。
FIG. 2 is a plan view and M of a manufacturing process of the gas sensor.
It is -M longitudinal sectional view.

【図3】同ガスセンサの製造過程における平面図及びM
−M縦断面図である。
FIG. 3 is a plan view and M of the gas sensor in a manufacturing process.
It is -M longitudinal sectional view.

【図4】同ガスセンサの製造過程における平面図及びM
−M縦断面図である。
FIG. 4 is a plan view and M of a manufacturing process of the gas sensor.
It is -M longitudinal sectional view.

【図5】同ガスセンサの第1支持基板の他の実施例の平
面図及び側面図である。
FIG. 5 is a plan view and a side view of another embodiment of the first support substrate of the gas sensor.

【図6】同ガスセンサの時間対温度特性である。FIG. 6 is a time-temperature characteristic of the gas sensor.

【図7】従来のガスセンサの平面図及びM−M縦断面図
である。
FIG. 7 is a plan view and a vertical sectional view taken along line MM of a conventional gas sensor.

【符号の説明】[Explanation of symbols]

1・・・ガスセンサ、2・・・第1支持基板、2a・・・凹部、
2b・・・貫通孔、4・・・第2支持基板、5・・・金属膜、6・
・・加熱体、8・・・絶縁体、9,10・・・電極、11・・・ガ
ス感応膜。
DESCRIPTION OF SYMBOLS 1 ... gas sensor, 2 ... 1st support substrate, 2a ... recessed part,
2b: through-hole; 4: second support substrate; 5: metal film;
..Heating element, 8 ... insulator, 9,10 ... electrode, 11 ... gas sensitive film.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 第1支持基板上に加熱体を取着し、この
加熱体上に絶縁体及び一対の電極を備えたガス感応膜を
取着したガスセンサにおいて、前記加熱体の取着部分に
当たる前記第1支持基板の上面に凹部を形成するととも
に、前記第1支持基板と前記加熱体との間に第2支持基
板を挟着し、前記加熱体の取着部分に当たる前記第2支
持基板の下面に金属等の反射部材を取着したことを特徴
とするガスセンサ。
1. A gas sensor having a heating element mounted on a first support substrate and a gas-sensitive film having an insulator and a pair of electrodes mounted on the heating element. A concave portion is formed on an upper surface of the first support substrate, a second support substrate is sandwiched between the first support substrate and the heating body, and the second support hitting an attachment portion of the heating body.
A gas sensor, wherein a reflection member such as a metal is attached to a lower surface of a holding substrate .
【請求項2】 前記第1支持基板には前記凹部に代えて
貫通孔を形成したことを特徴とする請求項1記載のガス
センサ。
2. The gas sensor according to claim 1, wherein a through hole is formed in the first support substrate instead of the recess.
JP04359631A 1992-12-26 1992-12-26 Gas sensor Expired - Fee Related JP3132210B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04359631A JP3132210B2 (en) 1992-12-26 1992-12-26 Gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04359631A JP3132210B2 (en) 1992-12-26 1992-12-26 Gas sensor

Publications (2)

Publication Number Publication Date
JPH06201628A JPH06201628A (en) 1994-07-22
JP3132210B2 true JP3132210B2 (en) 2001-02-05

Family

ID=18465489

Family Applications (1)

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JP04359631A Expired - Fee Related JP3132210B2 (en) 1992-12-26 1992-12-26 Gas sensor

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DE102013218840A1 (en) 2013-09-19 2015-03-19 Robert Bosch Gmbh Micro hot plate device and sensor with a micro hotplate device
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