CN215114915U

CN215114915U - Array type temperature sensor

Info

Publication number: CN215114915U
Application number: CN202121341233.XU
Authority: CN
Inventors: 不公告发明人
Original assignee: Suzhou Ruiguang Technology Co ltd
Current assignee: Suzhou Ruiguang Technology Co ltd
Priority date: 2021-06-17
Filing date: 2021-06-17
Publication date: 2021-12-10
Anticipated expiration: 2031-06-17

Abstract

The utility model discloses an array temperature sensor, concretely relates to micro-electromechanical system temperature sensing technical field, array temperature sensor adopt supreme substrate, insulating layer, adhesion layer, the temperature sensing thin layer that sets gradually down, the top of insulating layer is provided with two pads. The utility model discloses a temperature sensing film square array of equidimension not is arranged, and central region square area is little promptly, and peripheral region square area is big to slow down the edge heat dissipation, realize that the temperature sensing is even, reduce the temperature measurement error.

Description

Array type temperature sensor

Technical Field

The utility model relates to a micro-electromechanical system temperature sensing technical field, more specifically say, the utility model relates to an array temperature sensor.

Background

With the rapid development of micro-nano manufacturing technology, in order to realize the miniaturization, low power consumption and integration of devices, the MEMS temperature sensor has gradually replaced the traditional temperature sensor. The temperature sensing film is used as a temperature sensing material, and utilizes the principle that the resistance value and the temperature have a specific function relationship, namely the heat sensing effect.

In the conventional structure, the resistors of the temperature sensing film are designed to be arranged in a folded line or an array of slender strips. A conventional array is to design standard cells of thermistors and then extend the standard cells to a different array, such as a 5 x 5 array or a 10 x 10 array, and form metal interconnects. The temperature sensing film is in contact with the substrate, and the heat transfer rate is faster in the edge portion than in the central portion, resulting in a measured temperature lower than an actual temperature, thereby causing a test error.

The utility model discloses the content

In order to overcome the above-mentioned defect of prior art, the embodiment of the utility model provides an array temperature sensor arranges through the array of the not temperature sensing film square of equidimension, and central region square area is little promptly, and peripheral region square area is big to slow down the edge heat dissipation, realize that the temperature sensing is even, reduce the temperature measurement error.

In order to achieve the above object, the utility model provides a following technical scheme:

the array temperature sensor adopts a substrate, an insulating layer, an adhesion layer and a temperature sensing thin film layer which are sequentially arranged from bottom to top, and two bonding pads are arranged at the top end of the insulating layer.

In a preferred embodiment, the adhesive layer and the temperature sensitive film layer are each provided in a square array configuration, the square array configuration being such that the central square is small, the edge squares are large and the square side length increases from the centre to the edge.

In a preferred embodiment, the substrate is a member made of a single crystal silicon material, the insulating layer is a member made of a thermal oxide silicon dioxide material, and the thickness of the insulating layer is set to be 100nm to 2000 nm.

In a preferred embodiment, the substrate is a member made of glass or quartz, the insulating layer is a member made of silicon nitride or low-stress chemical vapor deposition silicon dioxide, and the thickness of the insulating layer is set to be 100nm to 2000 nm.

In a preferred embodiment, the adhesion layer is a member made of metallic titanium or chromium, and the thickness of the adhesion layer is set to be 10nm-50 nm.

In a preferred embodiment, the temperature sensing thin film layer is made of N polysilicon, platinum or nickel, and the thickness of the temperature sensing thin film layer is set to be 100nm to 500 nm.

The utility model discloses a technological effect and advantage:

the utility model discloses a temperature sensing film square array of equidimension not is arranged, and central region square area is little promptly, and peripheral region square area is big to slow down the edge heat dissipation, realize that the temperature sensing is even, reduce the temperature measurement error.

Drawings

Fig. 1 is a top view of the arrayed temperature sensor provided by the present invention.

Fig. 2 is an exploded view of the arrayed temperature sensor of the present invention.

The reference signs are: 1. a substrate; 2. an insulating layer; 3. an adhesive layer; 4. a temperature sensing film layer; 5. and a bonding pad.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

As shown in the attached drawings 1-2, an array temperature sensor adopts a substrate 1, an insulating layer 2, an adhesion layer 3 and a temperature sensing thin film layer 4 which are sequentially arranged from bottom to top, two bonding pads 5 are arranged at the top end of the insulating layer 2, the adhesion layer 3 and the temperature sensing thin film layer 4 are both arranged into a square array structure, the square array structure is arranged into a central square block and small, the edge square block is large, the side length of the square block is increased from the central 5um to the edge 20um, the square blocks in the array are electrically connected through leads, and resistance signals are output through the bonding pads 5 by the leads.

As shown in fig. 1-2, the substrate 1 is monocrystalline silicon, and if it is not integrated with other sensor chips, a material with low thermal conductivity such as glass or quartz is preferably used as the substrate 1, and the insulating layer 2 is chemical vapor deposition silicon dioxide or silicon nitride and has a thickness of 100nm to 2000 nm. If a single crystal silicon substrate 1 is used, thermal oxide silicon dioxide can be used for the insulating layer 2, and the thickness is 100nm to 2000 nm.

As shown in fig. 1-2, the adhesion layer 3 is made of titanium or chromium, the adhesion layer 3 is formed by evaporation or sputtering, the thickness of the adhesion layer 3 is 10nm-50nm, when the temperature sensing thin film layer 4 is made of platinum or nickel, the evaporation or sputtering is used, when the temperature sensing thin film layer 4 is made of P-type or N-type polysilicon, the combination of chemical vapor deposition and ion implantation is used, the bonding pad 5 is formed by platinum, aluminum and gold, and the thickness of the temperature sensing thin film layer 4 is 100 nm-500 nm.

The embodiment specifically solves the problem that in the prior art, the temperature sensing film is in contact with the substrate (1), the heat transfer rate of the edge part is higher than that of the central part, so that the measured temperature is lower than the actual temperature, and the test error is caused.

The points to be finally explained are: first, in the description of the present application, it should be noted that, unless otherwise specified and limited, the terms "mounted," "connected," and "connected" should be understood broadly, and may be a mechanical connection or an electrical connection, or a communication between two elements, and may be a direct connection, and "upper," "lower," "left," and "right" are only used to indicate a relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship may be changed;

secondly, the method comprises the following steps: in the drawings of the disclosed embodiments of the present invention, only the structures related to the disclosed embodiments are referred to, and other structures can refer to the common design, and under the condition of no conflict, the same embodiment and different embodiments of the present invention can be combined with each other;

and finally: the above description is only for the preferred embodiment of the present invention and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. An array type temperature sensor, characterized in that: the array type temperature sensor is characterized in that the array type temperature sensor adopts a substrate (1), an insulating layer (2), an adhesion layer (3) and a temperature sensing thin film layer (4) which are sequentially arranged from bottom to top, two bonding pads (5) are arranged at the top end of the insulating layer (2), the adhesion layer (3) and the temperature sensing thin film layer (4) are both arranged into a square array structure, the square array structure is arranged into a small square block at the center, a large square block at the edge and the length of the square block side is increased from the center to the edge.

2. The array temperature sensor of claim 1, wherein: the substrate (1) is a member made of monocrystalline silicon, the insulating layer (2) is a member made of thermal oxidation silicon dioxide, and the thickness of the insulating layer (2) is set to be 100nm-2000 nm.

3. The array temperature sensor of claim 1, wherein: the substrate (1) is a component made of glass or quartz, the insulating layer (2) is a component made of silicon nitride or low-stress chemical vapor deposition silicon dioxide, and the thickness of the insulating layer (2) is set to be 100nm-2000 nm.

4. The array temperature sensor of claim 1, wherein: the adhesion layer (3) is a component made of metal titanium or chromium, and the thickness of the adhesion layer (3) is set to be 10nm-50 nm.

5. The array temperature sensor of claim 1, wherein: the temperature sensing film layer (4) is a member made of N polycrystalline silicon, metal platinum or metal nickel, and the thickness of the temperature sensing film layer (4) is set to be 100 nm-500 nm.