JP3177732B2 - Method and apparatus for forming coating film - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for forming a coating film.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process, a coating liquid, for example, a photoresist liquid is applied to an object to be processed, for example, a semiconductor wafer (hereinafter, referred to as a wafer) such as a silicon substrate, and a circuit pattern or the like is reduced using a photo technique. There is a series of processing steps for exposing the photoresist film and developing it. This processing step is called photolithography.

[0003] This processing step is a very important process in the high integration of semiconductor devices. In this process, in order to uniformly form a resist film on the surface of an object to be processed, for example, a wafer, for example, before a resist solution is applied. After the solvent of the resist solution is dropped on the wafer surface, the solvent is diffused on the wafer surface by rotating the wafer, and then the resist solution is dropped on the wafer surface and rotated to follow the solvent and diffuse. Are known (JP-A-61-91655, JP-A-61-150332).
JP-A-7-320999).

[0004]

However, in this type of conventional coating film forming method, in order to spread the resist solution to the periphery of the wafer, the resist solution A is given a certain volume as shown in FIG. Since the resist solution A must be supplied, the tip portion may be solidified in the process in which the resist solution A reaches the periphery of the wafer W. Therefore,
There is a problem that not only the film thickness becomes non-uniform, but also the amount of the resist solution cannot be reduced. In order to remove the solidification at the tip of the resist solution, it is conceivable to control the rotation speed of the wafer at a high speed. To become and,
As a parameter other than the moment at which the resist attempts to spread due to the centrifugal force, evaporation of the thinner in the resist is disturbed by the turbulence of the air flow in the upper outer periphery, and vertical stripe-shaped unevenness is generated on the peripheral portion of the wafer W, and eventually, uniform coating is performed. However, there is a problem that the amount of the resist solution used increases in order to remove the unevenness at the peripheral portion of the wafer. In particular, in the current situation where 8-inch and 12-inch wafers are used with the high integration of semiconductor devices, the number of rotations of the wafer must be reduced as compared with 6-inch wafers.
As the amount of the resist solution used increases, it is difficult to obtain a uniform film thickness.

The present invention has been made in view of the above circumstances, and requires only a small amount of a coating solution such as a resist solution, and is capable of forming a coating film having a uniform thickness. It is intended to provide a device.

[0006]

In order to achieve the above object, according to the first aspect of the present invention, a solvent of a coating solution is supplied to the surface of a processing object , and then the object to which the solvent is supplied is rotated. a step of thereby diffusing across the solvent the entire surface of the object to be, after this step, a step of supplying the coating liquid to the surface of the object to be processed, after this step, the process of surrounding the object to be processed A step of shutting off the atmosphere from the outside air, supplying a mist-like solvent into the processing atmosphere to suppress evaporation of the solvent in the coating solution, and after this step, rotating the object to be processed, forming a coating film by diffusing the coating solution over the entire surface of the body, this process
After, while stopping the supply of the mist-like solvent,
Releasing the processing atmosphere of the object to be processed.

[0007] Further , the invention according to claim 2 is a method for manufacturing an object to be processed.
A solvent for the coating solution is supplied to the surface, and then the solvent is supplied.
The solvent is rotated over the entire surface of the object
Diffusion step, and after this step,
Insulate the processing atmosphere surrounding the body from outside air and
Supply the mist-like solvent into the processing atmosphere of
A step of suppressing evaporation of the solvent diffused on the body;
Supplying the coating liquid to the surface of the object after the step
After this step, the object is rotated to
Spread the above coating solution over the entire surface of the processed object and apply
Forming a film, and after this step, the mist
Supply of the solvent is stopped, and the processing atmosphere of the object is processed.
Releasing the surrounding air .

[0008] In the coating film formation method according to claim 1 or 2, wherein, after forming the coating film, by rotating the workpiece, better, further comprising the step of drying the coating solution preferably (claim 3) .

[0009] Further , in any one of claims 1 to 3
In the method of forming a coating film, the release of the processing atmosphere is
Dry air is introduced into the processing atmosphere where the mist-like solvent is supplied.
It is more preferable to carry out by supplying (claim 4) .

According to a fifth aspect of the present invention, there is provided a holding means for holding an object to be horizontally rotatable, a coating liquid supply means for supplying a coating liquid to the surface of the object, First solvent supply means for supplying a solvent for the coating liquid;
A processing space for accommodating the object to be processed so as to be shut off from the outside air
Form and accommodate the object to be processed and the holding means
A vessel for a second solvent supply means for supplying a mist of the solvent to the treatment space, et al provided in a lower portion of the container
Supply of the second solvent through the exhaust port and the opening / closing means.
Means and a circulation line communicating with the exhaust port .

[0011] In the coating film forming apparatus according to claim 5 ,
Write further comprising an atmospheric release unit for supplying dry air to the processing space is preferably (claim 6).

[0012] In the coating film forming apparatus of the present invention, if the processing space intended to accommodate possible block the outside air to be processed, the structure may be arbitrary, for example, process space, volume
And vessels, or constituted by a lid for opening and closing the upper opening of the container (claim 7), or the processing space, and a processing container having a loading and unloading opening of the object, loading of the processing chamber - carry-out port can be configured with a shutter for opening and closing (claim 8).

Further, the circulation conduit, as long as it supplies the mist of the solvent into the processing space, and the blowing means the structure which is interposed optionally a well, for example, the circulation pipe, the circulating A structure including a solvent tank communicating with the pipeline and a carrier gas supply means for supplying a carrier gas into the solvent tank can be provided (claim 9 ).

The atmosphere releasing means may have any structure as long as it supplies dry air into the processing space. For example, the atmosphere releasing means may include a dry air communicating with the processing space through the opening / closing means. A structure including a supply pipe, and a blowing means and a dehumidifying means provided in the dry air supply pipe can be provided (claim 10 ).

According to the present invention, the solvent of the coating liquid is supplied to the surface of the object to be diffused over the entire surface of the object, and the coating liquid is diffused over the entire surface of the object following the solvent. During the process, the processing atmosphere of the object to be processed is shielded from the outside air, and the solvent is supplied into the processing atmosphere to suppress the evaporation of the solvent in the coating liquid, thereby solidifying the front end side of the coating liquid to be diffused. Can be prevented. Further, by suppressing the evaporation of the solvent in the coating liquid, the amount of the coating liquid used can be reduced. Therefore, the thickness of the coating film can be made uniform, and the amount of the coating liquid used can be reduced.

Further, after the processing atmosphere of the object to be processed is released, the object to be processed is rotated and the coating liquid is dried, whereby the coating film forming process can be sped up. Furthermore, after diffusing the coating film over the entire surface of the object,
By supplying dry air into the processing atmosphere, the coating film forming process can be further speeded up.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In this embodiment, a case will be described in which the coating film forming apparatus according to the present invention is applied to a system for applying and developing a resist solution on a semiconductor wafer.

As shown in FIG. 1, the resist coating and developing system includes a first cassette 1a for accommodating an unprocessed object such as a semiconductor wafer W (hereinafter, referred to as a wafer) and a processed wafer W Is placed at a predetermined position, and the cassettes 1a and 1
b, a cassette station 4 provided with a transfer tweezers 2 for transferring the wafer W in or out of the wafer W and a mounting table 3 for transfer, and a surface of the wafer W disposed adjacent to the cassette station 4. A coating processing section 10 for forming a resist film on the substrate; a developing processing section 20 disposed between the coating processing section 10 via the interface section 30 for developing the exposed wafer W; The wafer W, which is disposed between the developing unit 20 and the interface unit 30A via the interface unit 30A and is coated, is irradiated with ultraviolet light from a light source via a predetermined mask member M through a predetermined mask member M to apply a predetermined circuit pattern to the resist film. An exposure apparatus 40 (exposure processing unit) for exposing the main part constitutes a main part.

At the center of the coating processing section 10 and the developing processing section 20, a linear transport path 5 is laid, respectively, and a transport mechanism 6 that can move the transport path 5 is provided. The transfer mechanism 6 is provided with a wafer transfer arm 7 that moves in the X and Y directions and the vertical direction (Z direction) in a horizontal plane, and is freely rotatable (θ).

In the coating processing section 10, the transport mechanism 6
On one side along the side edge of the transport path 5 of the
1, an adhesion part 12a for performing a hydrophobic treatment process
And cooling unit 12b are stacked and provided. Adhesion unit / cooling unit 12 and bake unit 13 (first heat treatment unit) are arranged adjacent to each other in a row. On the other side of the transport path 5, a coating film of the present invention is formed by spin-coating the jet water washing unit 14 and two or more resist liquids (specifically, a normal resist liquid and an anti-reflection resist liquid). A forming device, for example, a resist coating device 15 is arranged adjacent to a line, and the resist coating device 15 and the bake section 13 are arranged to face each other via the transport path 5. Thus, the transport path 5
By arranging the baking unit 13 and the resist coating device 15 to face each other with a distance therebetween, it is possible to prevent the heat of the baking unit 13 from being transmitted to the resist coating device 15, and to prevent thermal effects during the resist coating process. Can be prevented.

As shown in FIG. 2, the resist coating apparatus 15 includes a wafer W which is separated from the atmosphere of the coating section 10.
A vertically movable and horizontally rotatable mounting table 5 is provided in a processing container 50 forming a processing chamber (processing space) having a closed structure surrounding the processing table 50.
1 (spin chuck). In this case, the processing container 50 includes an outer container 52 in which an upper surrounding portion surrounding the outer periphery of the wafer W is vertically movable, an inner container 53 forming a bottom portion of the processing container 50, and an upper opening of the outer container 52. A main part is constituted by the lid 54 to be closed.

The outer container 52 has a cylindrical outer container body 52a surrounding the wafer W on the spin chuck 51 , and a cylindrical movable member mounted vertically movably with respect to the outer container body 52a. And a wall 52b.
The movable wall 52b can be moved up and down with respect to the outer container main body 52a by a lifting arm (not shown).

The inner container 53 is preferably provided with a cylindrical wall 53 on the upper surface of a bottom portion 53a inclined outwardly so that the drainage liquid flows.
b, and a rotating body 53e, which is rotatably arranged in a horizontal plane via a bearing 53d at the upper end of a cylindrical wall 53b and is connected to the spin chuck 51 and rotated. It is configured. This rotating body 53
e, a cylindrical hanging wall 53f protrudes downward at a lower portion of the peripheral edge of the processing container 50e.
Are formed with a plurality of communication ports 53g communicating with the exhaust port 55 and the drain port 56 at the lower portion.

The lid 54 is formed in a dome shape having a rotating shaft 54c rotatably suspended in a horizontal plane on a suspension arm 54a via a bearing 54b. The sealing member 54d such as an O-ring provided on the peripheral surface is in airtight contact with the rotating body 53e via a sealing member 54d,
In this contact state, a sealed processing space 57 (processing atmosphere) is formed, and the rotational force from the rotating body 53e is transmitted to the lid 54. The lid 54 is moved up and down by a lifting mechanism (not shown).
Can be moved vertically. The lid 54 is rotatably connected to a solvent supply tube connected to a not-shown solvent supply source and a resist solution supply tube connected to a not-shown resist solution supply source through the rotation shaft 54c. 1
Are provided with a solvent supply passage 58 and a resist solution supply passage 59, and the solvent supply nozzle 6 connected to the first solvent supply passage 58 and the resist solution supply passage 59, respectively.
0 (first solvent supply means) and resist liquid supply nozzle 61
Are integrally provided rotatably with the lid 54. In addition, the circulation pipe 7 penetrates through the rotation shaft 54c to the lid 54.
1 and a second solvent supply passage 62 (second solvent supply passage) rotatably connected to the dry air supply line 81.
) And a dry air supply passage 63 are provided.

In this case, the circulation line 71 is connected to the second solvent supply passage 62 and the exhaust port 55, and the liquid in the exhaust is sequentially supplied to the circulation line 71 from the exhaust port 55 side. A gas-liquid separator 72 for separation, a blower fan 73, a filter 74, and an on-off valve 75 are interposed. Further, a discharge pipe 77 connected to a tank 76 containing a solvent for the resist solution A, that is, a thinner B, is connected between the blower fan 73 and the filter 74 in the circulation pipeline 71. The tank 76 is connected to a carrier gas supply source (not shown) via a carrier gas supply pipe 78 (carrier gas supply means), and a carrier gas supplied from the carrier gas supply source into the thinner B in the tank 76, for example. The thinner B flows into the circulation pipeline 71 by the He gas, and is supplied in the processing space 57 of the processing container 50 in a mist form by the air flowing through the circulation pipeline 71. It is formed. In this case, He gas is used as the carrier gas, but N2 gas, Ar gas, or the like can be used instead of He gas.

The drying air supply pipe 81 is connected to a dehumidifying means such as a dehumidifier 86 via an on-off valve 82, a filter 83, a blowing fan 84 and a temperature controller 85, and is connected to a drying air supply mechanism 80 (atmosphere). And a dehumidifier 86 of the dry air supply mechanism 80.
The air dehumidified to a predetermined humidity, for example, 40% or less, is set to a predetermined temperature, for example, room temperature (about 23 ° C.) by the temperature controller 85, and the processing space 57 of the processing container 50 is set.
It is configured to be supplied into.

On the other hand, in the development processing section 20, two bake sections 21 for chemically sensitizing the exposed resist film are provided on one side along the side edge of the transfer path 5 of the transfer mechanism 6.
(Second heat treatment units) are arranged adjacent to each other in a row.
Further, on the other side of the transport path 5, a development processing unit for rotatingly applying a developing solution, for example, two developing units 22, for example, is disposed adjacent to the baking unit 21. Thus, by arranging the baking unit 21 and the developing unit 22 to face each other while being separated from each other via the transport path 5, it is possible to prevent the heat of the baking unit 21 from being transmitted to the developing unit 22, and to perform the developing process. In this case, it can be prevented from being thermally affected.

The exposure apparatus 40 is connected to the developing section 20 through an interface 30A having a transfer table 31A for transferring the wafer W. Is provided with a wafer mounting table 41 and light irradiation means (not shown). On one side of the exposure apparatus 40, a cassette 43 for accommodating a mask member M disposed on the upper surface of the wafer W mounted on the wafer mounting table 41 is arranged. And a mask member transfer arm 42 for transferring the mask member M between the X and Y directions and the Z direction and rotatable (θ). Further, the exposure apparatus 40 includes a wafer transfer arm 44 for transferring a wafer W between the exposure apparatus 40 and the interface unit 30A disposed between the exposure apparatus 40 and the development processing unit 20 in the X and Y directions and the Z direction. The direction and rotation (θ) are provided freely.

Next, the processing steps of the wafer W in the resist liquid application / development processing system configured as described above will be described with reference to the flowcharts of FIGS.

First, an unprocessed wafer W placed in the cassette station 4 is received from the cassette 1a by the transfer tweezers 2 and transferred to the delivery mounting table 3 to align the center of the wafer W. Next, brush cleaning unit 1
1 and brush cleaning, and the jet water cleaning unit 14
After carrying out jet water cleaning, the wafer W is conveyed to the adhesion section 12a and subjected to a hydrophobic treatment for improving the adhesion between the wafer W and the resist while heating.

The wafer W subjected to the hydrophobic treatment is supplied to the cooling unit 12
After being cooled in b, the lid 54 is conveyed into the processing container 50 in a state where it is moved upward, and is held on the spin chuck 51 by, for example, vacuum suction. Then, after the wafer transfer arm 7 retreats, the solvent, for example, the thinner B is dropped from the solvent supply nozzle 60, and the rotation of the spin chuck 51 rotates the wafer W to diffuse the thinner over the entire surface of the wafer W. Simultaneously with the diffusion of the thinner, the resist liquid A is dropped from the resist liquid supply nozzle 61 onto the wafer surface. At the same time, the lid 54 descends to seal the processing container 50 to form a processing space 57, and the mist thinner supplied into the circulation pipe 71 is removed from the second solvent supply path 6.
2 is supplied into the processing space 57, and in this state, the resist liquid is diffused over the entire surface of the wafer W. After the resist liquid is diffused over the entire surface of the wafer W, the atmosphere control means 70
At the same time, the on-off valve 82 of the dry air supply mechanism 80 is opened to supply the dry air into the processing space 57 and replace the inside of the processing space 57 with the dry air to reduce the thinner atmosphere in the processing space 57. To release. At this time, the thinner atmosphere in the processing space 57 may be released by moving the lid 54 upward without supplying dry air into the processing space 57. Simultaneously with the release of the atmosphere, a resist film is formed by shaking off and drying. The wafer W coated with the resist liquid in this manner is transported again to the baking unit 13 where it is baked and the solvent in the resist film is evaporated.

In the above-mentioned resist coating method, the lid 54 is lowered after the resist droplets are dropped to form the processing space 57, and the mist thinner is supplied into the processing atmosphere, as shown in FIG. Alternatively, after the thinner is diffused, the lid may be lowered to form the processing space 57, and the mist thinner may be supplied into the processing space 57. That is, it is only necessary that the mist-like thinner is supplied and filled in the processing atmosphere when the resist solution A is diffused.

The wafer W on which the coating process has been performed is transferred to the transfer table 31 of the interface unit 30 and received by the wafer transfer arm 7 of the developing unit 20, and then transferred to the interface unit 30A. The transfer arm of the exposure apparatus 40 after being transferred to the mounting table 31A and aligned.
The wafer is conveyed onto the mounting table 41 by 44 and irradiated with light from a light source via the mask member M, and a predetermined pattern is reduced and projected to be exposed. The exposed wafer W is transferred to the baking section 21 of the developing section 20 by the wafer transfer arm 7 via the interface section 30A and baked, and then transferred to the developing section 22 to be subjected to the developing process. Is done. The wafer W thus developed is transported again to the baking unit 21 and is post-baked to enhance the pattern strength.

The wafer W developed as described above
Is transferred to the transfer table 3 of the cassette station 4 and then transferred to the cassette 1b, which receives the processed wafer W by the transfer tweezers 2, and completes the processing.

In the above embodiment, the processing container 50 forming the processing space 57 is constituted by the outer container 52 in which the upper surrounding portion surrounding the outer periphery of the wafer W is vertically movable, and the bottom of the processing container 50. A case has been described in which the inner container 53 and the lid 54 that closes the upper opening of the outer container 52 are described. However, the structure of the processing container 50 does not necessarily need to be such a structure, and is illustrated in, for example, FIG. As described above, the processing space 57 is provided on one side with the opening 50a for loading / unloading the wafer W.
And a shutter 50b that opens and closes the opening 50a when driven by driving means such as a cylinder (not shown). In FIG. 3, reference numeral 90 denotes an outer container, reference numeral 91 denotes an inner container, and other components are the same as those in the above-described embodiment.

In the above embodiment, the case where the processing apparatus according to the present invention is applied to a semiconductor wafer coating / developing processing system has been described.
It is needless to say that the present invention can also be applied to a case where a resist solution is applied to an object to be processed such as a CD substrate and exposed and developed.

[0037]

An experiment on the state of a resist film when the processing atmosphere in the processing space 57 in the processing container 50 is changed will be described. First, 0.2 ml and 0.6 ml of the resist solution were dropped into the processing atmosphere without supplying the mist thinner, and the wafer W was rotated at 5000 rpm for 5 seconds. As a result, the result shown in FIG. 7 was obtained. . As a result, the resist film thickness at the center of the wafer is 8000 to 8750.
Å, the resist film thickness at the peripheral portion of the wafer is 70
It was found that the difference was 1750-1000 °, and that a vertical stripe pattern was formed at the peripheral portion of the wafer, resulting in an uneven resist film thickness. Further, when the discharge amount of the resist liquid was 0.2 ml, it was found that the resist liquid did not spread over the entire surface of the wafer but solidified inside the peripheral portion.

Next, a mist thinner is supplied into the processing atmosphere, and under this atmosphere, 0.4 ml of resist solution is dropped, the rotation speed of the wafer W is set to 2000 rpm, and the rotation time is set to 3 sec, 4 sec, 5 sec and 5 sec, respectively. 6 sec
And 7 sec, the result as shown in FIG. 8 was obtained. As a result, in the shortest rotation time of 3 seconds, the resist film thickness at the central portion of the wafer is 12000 to 12
400 °, the resist film thickness at the peripheral portion of the wafer becomes 10,000 to 11000 °, and the film thickness difference is 1400 °.
Although it was as large as ~ 2000mm, the processing time was 4s
In the case of ec to 7 sec, the difference in film thickness between the central portion of the wafer and the peripheral portion of the wafer could be reduced. The slight unevenness occurred at the center of the wafer, which is considered to be due to the center of the vortex (tornado) of the air flow supplied into the processing atmosphere.

Therefore, when the resist liquid is diffused on the surface of the wafer W, the resist liquid, for example, a thinner such as a thinner is supplied into the processing atmosphere in a mist state, so that the resist liquid can be supplied without increasing the rotation speed of the wafer W. The coating can be performed uniformly, and the amount of the resist solution can be reduced. Further, since the rotation speed of the wafer W can be reduced, it is suitable for resist coating processing of, for example, an 8-inch wafer or a 12-inch wafer. Furthermore, since drainage can be reduced, clogging of drain and the like can be prevented.

[0040]

As described above, according to the present invention, when the coating liquid is diffused over the entire surface of the processing object following the solvent of the coating liquid, the processing atmosphere surrounding the processing object is changed to the outside air. In addition to shutting off, the solvent is supplied into the processing atmosphere to suppress the evaporation of the solvent in the coating solution. Can be reduced. Therefore,
The thickness of the coating film can be made uniform and the amount of the coating liquid used can be reduced.

After the processing atmosphere of the object to be processed is released, the object to be processed is rotated and the coating liquid is dried, so that the time for the coating film forming process can be shortened. After the coating film is diffused over the entire surface of the substrate, by supplying dry air into the processing atmosphere, the time for the coating film forming process can be further reduced, and the throughput of the coating film formation can be improved. it can.

[Brief description of the drawings]

FIG. 1 is a schematic plan view of an example of a system for applying and developing a resist solution for a semiconductor wafer provided with a coating film forming apparatus of the present invention.

FIG. 2 is a schematic sectional view showing one embodiment of a coating film forming apparatus of the present invention.

FIG. 3 is a schematic sectional view showing another embodiment of the coating film forming apparatus of the present invention.

FIG. 4 is a flowchart illustrating one embodiment of a resist coating process for a semiconductor wafer.

FIG. 5 is a flowchart illustrating another embodiment of a resist coating process for a semiconductor wafer.

FIG. 6 is an explanatory view of a state in which a resist film is formed on the surface of a semiconductor wafer.

FIG. 7 is a graph showing a relationship between a resist film thickness and a wafer diameter when a mist thinner is not supplied into a processing atmosphere.

FIG. 8 is a graph showing a relationship between a resist film thickness and a wafer diameter when a mist thinner is supplied in a processing atmosphere.

[Explanation of symbols]

W Semiconductor wafer (object to be processed) A Resist solution (coating solution) B Thinner (solvent) 50, 50A Processing container 50a Opening 50b Shutter 51 Spin chuck (holding means) 52 Outer container 53 Inner container 54 Cover 57 Processing space 60 Solvent Supply nozzle (first solvent supply means) 61 Resist liquid supply nozzle 62 Second solvent supply passage (second solvent supply means) 70 Atmosphere control mechanism (Atmosphere control means) 71 Circulation pipeline 73 Blower fan 75 Open / close valve ( Opening / closing means) 76 Thinner storage tank 77 Discharge pipe 78 Carrier gas supply pipe 80 Dry air supply mechanism (atmosphere releasing means) 81 Dry air supply pipe line 82 Opening / closing valve (Opening / closing means) 84 Blower fan

Continued on the front page (51) Int.Cl. ⁷ Identification code FI H01L 21/30 567 (72) Inventor Nobuo Konishi 650 Mitsuzawa, Hosaka, Nirasaki, Yamanashi Prefecture Tokyo Electron Kyushu Corporation Yamanashi Development Center (56) References Special JP-A-7-320999 (JP, A) JP-A-61-150332 (JP, A) JP-A-61-91655 (JP, A) JP-A-4-361524 (JP, A) JP-A-3-175616 ( JP, A) JP-A-4-98823 (JP, A) JP-A-3-175616 (JP, A) JP-A-3-56169 (JP, A) JP-A-64-27667 (JP, A) Hei 8-257470 (JP, A) JP-A Hei 8-236436 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/027

Claims (10)

(57) [Claims] 1. A solvent for a coating liquid is supplied to the surface of a target object.
, And then the solvent by rotating the workpiece in which the solvent is supplied and a step of diffusing across the entire surface of the object to be processed, after this step, supplying a coating liquid to the surface of the object to be processed And after this step , a step of shutting off the processing atmosphere surrounding the object to be processed from outside air and supplying a mist-like solvent into the processing atmosphere to suppress evaporation of the solvent in the coating solution. And after this step, rotating the object to be processed, diffusing the coating solution over the entire surface of the object to form a coating film, and after this step, the mist-like solvent Stop supplying
And a step of releasing the processing atmosphere of the object to be processed. 2. A solvent for a coating liquid is supplied to the surface of the object to be processed.
And then rotate the object to which the solvent is supplied,
A step of diffusing the solvent over the entire surface of the object, and after this step, a processing atmosphere surrounding the object is
In addition to shielding from outside air, mist-like
The evaporation of the solvent diffused on the object by supplying the solvent
After the step of suppressing and the step of supplying the coating liquid to the surface of the object to be processed.
And after this step, rotating the object to be processed
The coating solution is diffused over the entire surface of the
And after this step, the supply of the mist-like solvent is stopped.
With the coating film forming method characterized by having the steps of releasing the process atmosphere of the object to be processed. 3. The method for forming a coating film according to claim 1 , wherein, after forming the coating film, the object is rotated.
A method for forming a coating film, further comprising a step of drying the coating liquid. 4. A coating according to any one of claims 1 to 3
In the fabric film forming method, the treatment atmosphere is released by supplying a mist-like solvent.
By supplying dry air into the processing atmosphere
A method for forming a coating film, characterized in that: 5. A holding means for holding an object to be horizontally rotatable, a coating liquid supply means for supplying a coating liquid to the surface of the object, and a solvent for the coating liquid to be supplied to the surface of the object. a first solvent <br/> agent supply means, a processing space for interruptible housed with the outside air the object to be processed form of
While accommodating the object to be processed and the holding means.
And a second solvent for supplying a mist-like solvent into the processing space.
Supply means , an exhaust port provided at a lower part of the container, and the second solvent supply means and the exhaust port via opening / closing means.
And a circulating conduit communicating with the apparatus. 6. The coating film forming apparatus according to claim 5 , further comprising an atmosphere canceling unit for supplying dry air into said processing space. 7. The coating film forming apparatus according to claim 5, wherein the processing space is constituted by a container and a lid for opening and closing an upper opening of the container. . 8. The coating film forming apparatus according to claim 5, wherein the processing space includes a processing container having a loading / unloading port for the object to be processed and a shutter for opening and closing the loading / unloading port of the processing container. A coating film forming apparatus, comprising: In the coating film forming apparatus according to claim 9 according to claim 5, and supplies the blowing means is interposed the circulation pipe, and a solvent tank connected to the circulating pipe, a carrier gas to the solvent tank And a carrier gas supplying means. 10. The coating film forming apparatus according to claim 6, wherein the atmosphere releasing means is provided in a dry air supply pipe communicating with the processing space via an opening / closing means, and is provided in the dry air supply pipe. A coating film forming apparatus, comprising: a blowing unit and a dehumidifying unit.