JP2001319856A - Coating developing system and method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a coating developing system having a function capable of removing impurities of a molecular level such as oxygen or the like adhering to a wafer. SOLUTION: A passing part 5 is provided between an interface 4 and an exposure unit 6 of the coating developing system 1. The passing part 5 has a first path 60 where a wafer W passes when it is carried from the interface 4 to the exposure unit 6, and a second path 61 where the wafer W passes when it is carried from the exposure unit 6 to the interface 4. The first path 60 is provided with a pressure reducing removing unit 65 for reducing the pressure in a chamber and removing impurities in the chamber. The wafer W before exposure processing is carried into a pressure reducing removing unit 65 where impurities adhering to the wafer W are removed, and also solvent in a resist liquid on the wafer W can be evaporated at the same time.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a coating and developing system and a coating and developing method for a substrate.

[0002]

2. Description of the Related Art For example, in a photolithography process in a semiconductor device manufacturing process, a resist coating process for forming a resist film on a wafer surface, an exposure process for irradiating a wafer with a pattern, and a developing process for the exposed wafer are performed. A heating process, a cooling process, etc., which are performed before the developing process, the coating process, before and after the exposure process, and after the developing process are performed. These processes are performed in individually provided processing devices, and the respective processing devices are integrated into one so that the series of processes can be continuously performed, and constitute a coating and developing processing system. .

Usually, the coating and developing system has a loader / unloader section for loading and unloading a substrate into and from the coating and developing system, a coating device, a developing device, and a heat treatment device. , An exposure processing device outside the system in which the wafer is exposed, and a processing unit provided adjacent to the processing unit and the exposure processing device. And an interface unit for transferring.

When a wafer is processed in this coating and developing system, an air cleaner or the like is provided in the coating and developing system in order to prevent impurities such as fine particles from adhering to the wafer. Is supplied as a down flow, while the atmosphere in the coating and developing system is evacuated so that the wafer can be processed in a clean state.

[0005]

SUMMARY OF THE INVENTION However, in recent years,
Exposure technology using shorter wavelength light is being developed to form finer and more precise circuit patterns. There is a concern that level impurities, such as oxygen, ozone, and water vapor, may adversely affect the exposure process and prevent precise circuit patterns from being formed.

Therefore, it is necessary to prevent impurities such as oxygen from adhering to the wafer at least when the wafer is subjected to the exposure processing. Contains impurities such as oxygen, so that it is not possible to prevent the impurities from adhering to the wafer and to remove the impurities adhering to the wafer.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and uses a coating and developing system having a function of removing molecular impurities such as oxygen attached to a substrate such as a wafer, and a method of using the coating and developing system. It is an object of the present invention to provide a coating and developing method.

[0008]

According to the first aspect of the present invention, there is provided a coating processing apparatus for forming a coating film on at least a substrate, a developing processing apparatus for developing the substrate, and a heat processing apparatus for performing a heat treatment on the substrate. A processing unit having a first transfer device for carrying the substrate in and out of the coating processing device, the development processing device, and the heat treatment device; and an exposure process for exposing at least the processing unit and the substrate. An interface section having a second transfer device for transferring the substrate along a path between the substrate and the substrate, wherein the substrate is coated before the substrate is subjected to the exposure processing. There is provided a coating and developing system including a reduced-pressure removing device for sucking and removing impurities adhered to a film in a chamber. Note that the second transfer device only needs to have a function of loading and unloading a substrate to and from the processing unit, and does not matter to a function of loading and unloading the substrate into and from the exposure processing apparatus. In addition, the term “impurities” includes not only fine particles such as dust and dust but also impurities at a molecular level such as oxygen, ozone, water vapor, and organic substances. In addition, the reduced pressure removing device referred to here is a device that removes impurities adhering to a substrate while sucking an atmosphere in an airtightly closed chamber and reducing the pressure in the chamber.

As described above, by providing the reduced pressure removing device and removing the impurities attached to the coating film of the substrate, the exposure processing of the substrate can be suitably performed without being hindered by the impurities. In particular, light having a short wavelength, for example, 1
When light having a wavelength of 57 nm or less is used, defects are generated on the exposed substrate even by molecular-level impurities such as oxygen, so that the effect is large. As a means for maintaining a state in which no impurities are attached to the substrate, it is conceivable to always maintain a clean atmosphere around the substrate.
It is difficult to create an atmosphere in which oxygen and water vapor at the molecular level are completely removed, and there is a limit in preventing the adhesion of impurities. Therefore, it is more effective to provide a device capable of removing the impurities once attached since the attachment of the impurities can be completely prevented. The position where the reduced-pressure removing device is arranged may be inside the coating and developing system or outside the coating and developing system.
Further, the solvent in the processing liquid can be evaporated at the same time in the reduced pressure removing device, and such a processing conventionally performed by heating can be simultaneously performed.

[0010] In the invention of claim 1, claim 2
As described above, the interface section and the exposure processing apparatus may be connected via a transfer section, and the decompression removing apparatus may be provided in the transfer section. In this way, by providing the reduced-pressure removing device in the transfer section, the reduced-pressure removing device is adjacent to the exposure processing device, so that the substrate from which impurities have been removed by the reduced-pressure removing device can be easily transported to the exposure processing device. . Also,
There is no need to provide a complicated mechanism in a narrow area as compared with a conventional coating and developing system, which is preferable in design.

According to the second aspect of the present invention, the third aspect
As described above, a gas supply device for supplying an inert gas into the transfer unit and an exhaust unit for exhausting the atmosphere in the transfer unit may be provided. Thus, by providing the gas supply device and the exhaust means, the atmosphere in the transfer section is made a clean inert atmosphere. Therefore, the substrate from which impurities have been removed by the decompression device is once cleaned. It can be transported into the exposure processing apparatus while maintaining the state. The inert gas is an inert gas for the coating film on the substrate and does not contain impurities. In particular, it is preferable to use, for example, nitrogen gas, argon gas, neon gas, etc., which do not contain impurities such as oxygen, ozone, and water vapor.

According to the third aspect of the present invention, in the fourth aspect,
And a partition plate for shutting off the atmosphere between the interface unit and the transfer unit as described above. The partition plate has a passage port for transferring a substrate between the interface unit and the transfer unit, The passage opening may be provided with a shutter for opening and closing the passage opening.
As described above, by providing the partition plate between the interface section and the transfer section, the atmosphere in the transfer section does not interfere with the atmosphere in the interface section, and the atmosphere in the transfer section is kept in a clean state. Can be maintained. Further, by providing a passage opening in the partition plate and a shutter in the passage opening, the shutter is opened only when the substrate is carried in and out between the interface section and the transfer section. It is possible to suppress the atmosphere in the face portion from flowing into the transfer portion, and to maintain the inside of the transfer portion in a much cleaner state.

According to the fifth aspect of the present invention,
4 is a coating and developing system, wherein the pressure in the transfer section is set lower than the pressure in the exposure processing apparatus. As described above, by setting the pressure in the transfer unit lower than the pressure in the exposure processing apparatus, it is possible to prevent the atmosphere in the transfer unit from flowing into the exposure processing apparatus. Therefore, the exposure processing apparatus that requires a stricter atmosphere than the transfer section is maintained in a clean atmosphere, and the exposure processing is suitably performed.

In the coating and developing system according to any one of claims 2 to 5, the transfer section passes when the substrate is transferred from the interface section to the exposure processing apparatus. A first path, and a second path through which the substrate is transported from the exposure processing apparatus to the interface section, wherein the reduced-pressure removing device is provided in the first path. You may. Thus, by providing two paths in the transfer unit, the substrate before the exposure processing passes through the first path, and the substrate after the exposure processing passes through the second path.
Substrate processing is performed smoothly.

According to the sixth aspect of the present invention, there is provided the seventh aspect of the present invention.
The second transfer device is configured to be able to transfer the substrate to at least the decompression removing device as described above.
A third transfer device for loading and unloading a substrate with respect to the reduced-pressure removing device and the exposure processing device may be provided on a first path of the transfer unit.

As described above, by providing the second transfer device and the third transfer device, the substrate in the interface section is transferred to the reduced pressure removing device by the second transfer device, and the substrate in the reduced pressure removing device is transported. Can be transferred to the exposure processing apparatus by the third transfer apparatus.
The transfer of the substrate in the first path is suitably performed.

In the second path of the transfer section, a loading section for loading a substrate, and loading and unloading of a substrate to and from the loading section and the exposure processing apparatus. 4th to do
And the second transfer device may be configured to be able to carry out the substrate from at least the placement unit. By providing the second transfer device and the fourth transfer device in this manner, the substrate on which the exposure processing has been completed is transferred to the mounting portion by the fourth transfer device, and the substrate of the mounting portion is transferred by the fourth transfer device. Since it can be transported into the interface by the second transport device,
The transfer of the substrate in the second path is suitably performed.

According to the first aspect of the present invention, a ninth aspect
As described above, the decompression removing device may be provided in the interface section. As described above, by providing the reduced pressure removing device in the interface section, it is not necessary to extend the conventional coating and developing processing system and provide a new space for the reduced pressure removing device. preferable. Further, since the distance to the exposure processing apparatus is relatively short, the transfer of the substrate to and from the exposure processing apparatus is preferably performed. In particular, the substrate from which the impurities have been removed by the reduced pressure removing device,
Since it is preferable to carry the wafer into the exposure processing apparatus, it is important to provide a reduced pressure removing apparatus near the exposure processing apparatus.

According to the ninth aspect of the present invention, the first aspect of the present invention provides
A gas supply device for supplying an inert gas to the interface unit as in 0 and an exhaust unit for exhausting an atmosphere in the interface unit may be provided. In this way, by providing the gas supply device and the exhaust device, the inside of the interface portion is maintained in a clean inert atmosphere and the adhesion of impurities to the substrate can be suppressed, as in the third aspect. The inert gas is an inert gas for the coating film on the substrate and does not contain impurities. In particular, it is preferable to use, for example, nitrogen gas, argon gas, neon gas, etc., which do not contain impurities such as oxygen, ozone, and water vapor.

[0020] In the invention of claim 10,
A partition plate for shutting off an atmosphere between the processing unit and the interface unit as in claim 11, wherein the partition plate has a passage opening for transferring a substrate between the processing unit and the interface unit. The passage port may be provided with a shutter that allows the passage port to be opened and closed. In this way, by providing a partition plate between the processing unit and the interface unit, and further providing a passage opening and a shutter in the partition plate, the atmosphere in the interface unit can be reduced in the same manner as in claim 4. Interference with the atmosphere in the processing section is eliminated, and the atmosphere in the interface section is maintained in a clean state.

According to a twelfth aspect of the present invention, in the coating and developing system of the tenth or eleventh aspect, the pressure in the interface is set lower than the pressure in the exposure processing apparatus. A coating and developing system is provided.

By setting the pressure in the interface lower than the pressure in the exposure processing apparatus, the atmosphere in the interface section flows into the exposure processing apparatus as in the fifth aspect. Is prevented,
The inside of the exposure processing apparatus requiring a strict clean atmosphere is maintained in a clean state, and the exposure processing is suitably performed.

According to the thirteenth aspect of the present invention, a step of supplying a coating liquid to the substrate to form a coating film on the substrate, and irradiating the substrate on which the coating film has been formed with predetermined light to cause the substrate to A coating and developing method comprising an exposing step and a step of developing the substrate after the exposing step, wherein an impurity attached to the substrate is removed from the substrate between the coating film forming step and the exposing step. A coating and developing treatment method is provided. The term “impurities” includes not only dust and fine particles of dust but also impurities at a molecular level such as oxygen, ozone, water vapor, and organic substances.

As described above, since the impurities are removed from the substrate between the coating film forming step and the exposure step, the substrate at the time of performing the exposure step is kept in a clean state. Exposure is suitably performed without disturbing impurities. In particular, light having a short wavelength at the time of exposure, for example, 157 n
When light of m or less is used, even if an impurity at a molecular level is present, the effect is large because it adversely affects the exposure process. In addition, as a method of removing impurities from the substrate, a method of sucking an atmosphere on the substrate and removing impurities attached to the substrate by the suction force, or a method of injecting an inert gas onto the substrate, for example, by vigorously injecting the pressure into the substrate, A method of removing impurities from the substrate by supplying a chemical substance reacting only with the impurities to the substrate and removing the impurities from the substrate.

In the thirteenth aspect, as in the fourteenth aspect, the impurity removing step may be performed by reducing the pressure in a hermetically sealed chamber. As described above, by reducing the pressure in the chamber, the atmosphere on the substrate placed in the chamber is sucked, and impurities attached to the substrate can be removed by the suction force. In addition, when the pressure in the chamber is reduced, the solvent in the processing liquid can be evaporated at the same time, and such processing conventionally performed by heating can be simultaneously performed.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below. FIG. 1 is a plan view of a coating and developing system 1 according to the present embodiment, FIG. 2 is a front view of the coating and developing system 1, and FIG. 3 is a rear view of the coating and developing system 1. .

As shown in FIG. 1, the coating and developing system 1 carries in and out, for example, 25 wafers W from the outside into the coating and developing system 1 in units of cassettes, and carries in and out the wafers W into and from the cassette C. And a processing station 3 as a processing section in which various processing apparatuses for performing predetermined processing on a wafer W in a single-wafer manner in a coating and developing processing process are arranged in multiple stages, and adjacent to the processing station 3. And an interface unit 4 which carries a part of a path for transferring the wafer W between the processing station 3 and the exposure processing apparatus 6 provided outside the coating and developing processing system 1. Face part 4
And a transfer unit 5 that is provided between the interface unit 4 and the exposure processing device 6 and that transfers the wafer W between the interface unit 4 and the exposure processing device 6.

In the cassette station 2, a plurality of cassettes C can be mounted at predetermined positions on the cassette mounting table 7 in a line in the X direction (vertical direction in FIG. 1).
The cassette arrangement direction (X direction) and the cassette C
A wafer transfer body 8 capable of transferring the wafers W accommodated in the wafer array direction (Z direction; vertical direction) is provided movably along a transfer path 9 and is selectively provided for each cassette C. Is accessible.

The wafer carrier 8 has an alignment function for positioning the wafer W. As will be described later, the wafer carrier 8 is configured to be able to access the extension device 32 and the adhesion device 31 belonging to the third processing device group G3 on the processing station 3 side.

In the processing station 3, a main transfer device 13 as a first transfer device is provided at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to form a processing device group. Is composed. In the coating and developing processing system 1, four processing device groups G1, G2, G
3 and G4, and the first and second processing unit groups G
1 and G2 are located on the front side of the development processing system 1;
The processing unit group G3 is disposed adjacent to the cassette station 2, and the fourth processing unit group G4 is
It is arranged adjacent to. Further, a fifth processing unit group G5 indicated by a broken line as an option can be separately arranged on the back side. The main transfer unit 13 can carry in / out the wafer W to / from various processing units described later arranged in the processing unit groups G1, G3, G4, and G5.

In the first processing apparatus group G1, for example, as shown in FIG. 2, a resist coating apparatus 17 for applying a resist solution to the wafer W and a developing processing apparatus 18 for developing the exposed wafer W are provided. They are arranged in two stages from the bottom.
Similarly, in the case of the second processing unit group G2, similarly, the resist coating unit 19 and the developing unit 20 are stacked in two stages from the bottom.

In the third processing unit group G3, for example, as shown in FIG.
0, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, an extension device 32 for temporarily suspending the wafer W, cooling devices 33 and 34 for cooling the wafer W after the development process, and a post-development process. Post baking devices 35 and 3 for performing heat treatment on wafer W
6 and the like are stacked, for example, in seven stages from the bottom.

In the fourth processing unit group G4, for example, the cooling device 40, the wafers W before and after the exposure process are mounted, the extension devices 41 and 42 for temporarily waiting, and the wafer W after the exposure process are heated. Heating / cooling processing devices 43, 44, 45 for cooling to a predetermined temperature (PEB in FIG. 3)
/ COL), heating / cooling processing units 46 and 47 (PRE / COL in FIG. 3) for heating to evaporate the solvent in the resist solution, and thereafter cooling to a predetermined temperature are arranged in, for example, eight stages from the bottom. Stacked.

As shown in FIG. 4, the heating / cooling processing device 43 has a disk-shaped hot plate 51 for heating a substrate on a base 50 in the casing 43a, and moves to a position above the hot plate 51. In addition, a cooling plate 52 that receives and cools the wafer W from above the heating plate 51 is provided. The heating / cooling process of the wafer W is continuously performed in the same apparatus, so that the heat history given to the wafer W by the heating can always be kept constant. The other heating / cooling devices 44 to 4
7 also has the same configuration.

As shown in FIG. 1, the interface unit 4 is provided with a wafer carrier 55 as a second carrier at the center thereof. The wafer carrier 55 moves in the X direction (vertical direction in FIG. 1), the Z direction (vertical direction) and θ.
It is configured to be freely rotatable in the direction (rotational direction about the Z axis), and is connected to the extension devices 41 and 42, the peripheral exposure device 56, and the transfer unit 5 belonging to the fourth processing device group G4. It is configured such that the wafer W can be transferred to each of them by accessing.

The transfer section 5 is surrounded by a tunnel-shaped casing 5a having a rectangular cross section, and is configured so that another atmosphere does not easily flow into the transfer section 5. Further, the transfer unit 5 transports the wafer W from the interface processing unit 6 to the interface unit 4 through the first path 60 through which the wafer W is transported from the interface unit 4 to the exposure processing unit 6. And a second path 61 that passes through at the time. A partition plate 64 is provided between the first path 60 and the second path 61 so that the atmosphere of the first path 60 and the atmosphere of the second path 61 do not interfere with each other. .

In the first path 60, there are provided a reduced-pressure removing device 65 for sucking and removing impurities such as oxygen attached to the resist film on the wafer W in the reduced-pressure chamber, a reduced-pressure removing device 65 and the exposure processing device 6. On the other hand, a wafer transfer mechanism 66 as a third transfer device capable of transferring the wafer W is provided.

Here, the configuration of the reduced pressure removing device 65 will be described in detail. As shown in FIG. 5, the decompression removing device 65 is formed in a casing 65a in a substantially cylindrical shape with an open lower surface, and is capable of moving up and down, and a cover
0, a mounting table 71 that forms a decompression chamber S as a chamber integrally with the lid 70.

At the center of the upper surface of the lid 70, an exhaust pipe 75 for exhausting the atmosphere in the decompression chamber S is provided.
The exhaust pipe 75 is connected to a suction device 76. Therefore, by the operation of the suction device 76, the atmosphere in the decompression chamber S is sucked from the exhaust pipe 75, an airflow is formed in the decompression chamber S, and the pressure in the decompression chamber S is reduced. In addition, a rectifying plate 77 is provided above the inside of the lid 70.
Is provided, when the pressure in the decompression chamber S is reduced, the turbulence of the airflow formed in the decompression chamber S is suppressed, and the atmosphere in the decompression chamber S can be uniformly exhausted.

The mounting table 71 is formed in a thick disk shape, on which the wafer W can be mounted. The mounting table 71 is provided with a temperature control means (not shown) such as a Peltier element, for example. By controlling the mounting table 71 to a predetermined temperature, the temperature of the wafer W mounted on the mounting table 71 is reduced. It can be maintained uniformly in the plane. Further, a plurality of suction ports 78 may be provided at a position of the mounting table 71 corresponding to the lower end of the lid 70, and when the decompression chamber S is formed, the lower end of the lid 70 and the mounting table 70 When they come into contact with each other, these suction ports 78
The adhesion between the lid 70 and the mounting table 71 is maintained by the suction force from the substrate. Further, a through hole 80 is provided near the center of the mounting table 71 so as to penetrate the mounting table 71 in the up-down direction, and an elevating pin 81 described later can move up and down in the through hole 80.

Below the mounting table 71, a substantially cylindrical container 82 that forms an open chamber K integrally with the lower surface of the mounting table 71 is provided. The open chamber K communicates with the decompression chamber S via the through hole 80. A vent pipe 83 for opening the atmosphere in the open chamber K to the atmosphere is provided on the lower surface of the container 82 so that the atmosphere in the decompression chamber S can be opened to the atmosphere through the through hole 80 and the open chamber K. It is configured. Elevating pins 81 for elevating and lowering the wafer W are provided in the container 82, and the elevating pins 81 can be moved up and down in the through holes 80 by an elevating movement mechanism 84.

Further, transfer ports 86 and 87 for loading and unloading the wafer W are provided on the interface section 4 side and the exposure processing apparatus 6 side of the casing 65a, respectively. , Shutters 88 and 89 are provided.

On the other hand, in the second path 61, a loading section 95 for temporarily placing the wafer W after the exposure processing has been carried to the interface section 4, and a loading section 95 in the exposure processing apparatus 6. And a wafer transfer mechanism 96 as a fourth transfer device for transferring the wafer W to the mounting portion 95 described above.

The mounting portion 95 is formed in a disk shape.
An elevating mechanism 98 for elevating and lowering the mounted wafer W is provided near the center thereof. And this lifting mechanism 9
8, the wafer W can be transferred between the mounting section 95, the wafer transfer mechanism 96, and the wafer transfer body 55.

A partition plate 100 is provided between the transfer section 5 and the interface section 4 to cut off the atmosphere in the transfer section 5 and the atmosphere in the interface section 4. The partition plate 100 is provided with a passage port 102 at a position facing the reduced-pressure removing device 65 so that the wafer W can be transferred from the interface section 4 to the reduced-pressure removing device 65 by the wafer transfer body 55. Has become. Further, the passage opening 102 is provided with a shutter 103 that allows the passage opening 102 to be freely opened and closed. The shutter 103 is opened only when the wafer W passes through the passage opening 102, and otherwise, the shutter 103 is opened. Is to be closed.

Further, a passage opening 105 is provided at a position of the partition plate 100 facing the mounting portion 95, and the wafer W is transferred from the mounting portion 95 into the interface portion 4 by the wafer carrier 55. Can be transported. Further, the passage opening 105 is provided with a shutter 106 for opening and closing the passage opening 105, and the shutter 106 is opened only when the wafer W passes through the passage opening 105.

As shown in FIG. 6, a gas supply device 110 for supplying an inert gas is provided above each of the paths of the transfer section 5 configured as described above, that is, on the first path 60 and the second path 61. , 111 are provided individually, and the gas supply device 11 is provided from the gas supply device 110 to the first path 60.
A predetermined inert gas can be supplied from the first to the second path 61.

Each of the gas supply devices 110 and 111 is provided with a filter device 110a and 111a. Each of the filter devices 110a and 111a has a predetermined concentration of inert gas supplied from a supply source (not shown). It has a function of adjusting gas to a predetermined temperature and humidity, a ULPA filter for removing fine particles in an inert gas, and a chemical filter for neutralizing an alkaline component contained in the inert gas. Therefore, the first path 60 and the second path 61 can be supplied with an inert gas that has been adjusted in temperature and humidity and cleaned for each path.

On the other hand, the first route 60 and the second route 61
Exhaust pipes 112 and 113 as exhaust means are provided at the lower part of the air passage, respectively, so that the atmosphere in each path is exhausted. Therefore, the inert gas supplied from the gas supply devices 110 and 111 into the respective paths passes through the respective paths and is exhausted from the exhaust pipes 112 and 113. impurities,
For example, oxygen, ozone, water vapor, and the like are purged, so that each path can be maintained in a clean atmosphere. Further, the pressure in each path is controlled by the gas supply device 11 corresponding to each path.
A predetermined pressure can be controlled by adjusting the supply amount of the inert gas 0,111.

An exposure processing device 6 for performing an exposure process on the wafer W is provided adjacent to the transfer section 5 as shown in FIG. The exposure processing apparatus 6 is sealed by a casing 6a of the exposure processing apparatus 6, and is configured so that the atmosphere in the exposure processing apparatus 6 can be strictly controlled. In addition, a passing port 11 for loading the wafer W from the first path 60 is provided in the transfer section 5 side of the casing 6a.
5 and a passage 116 for unloading the wafer W to the second path 61.
The shutter 116 is provided with shutters 117 and 118 for opening and closing the passage ports 115 and 116, respectively.

Next, the process of the photolithography process performed in the coating and developing system 1 configured as described above will be described.

First, before the processing of the wafer W is started,
Each of the passages of the transfer unit 5, that is, the first passage 60 and the second passage 61, is controlled to a predetermined temperature and humidity, for example, 23 ° C. and 45% by the gas supply devices 110 and 111, and is inert in which fine particles are removed. Gas is supplied. Then, the atmosphere in each path is replaced with a clean atmosphere containing no fine particles and impurities such as oxygen, and the state is maintained thereafter. At this time, the pressure P1 in the transfer section 5 and the pressure P2 in the exposure processing apparatus 6 are set so as to satisfy the relationship of P2> P1, and the atmosphere in the transfer section 5 flows into the exposure processing apparatus 6. To prevent that. The pressure P1,
P2 is set to be higher than the pressure P0 in the clean room in which the coating and developing treatment system 1 is installed.
The atmosphere in the clean room containing the fine particles and the like is prevented from directly flowing into the coating and developing processing system 1. The temperature, humidity, or concentration of the inert gas supplied to each path may be the same as described above,
If necessary, they may be different.

When the processing of the wafer W is started,
First, in the cassette station 2, the wafer carrier 7 takes out one unprocessed wafer W from the cassette C,
It is carried into the adhesion device 31 of the processing station 3.

Next, in the adhesion device 31, the wafer W coated with an adhesion enhancer such as HMDS for improving the adhesion with the resist solution is transferred by the cooling device 30 by the main transfer device 13 and cooled to a predetermined temperature. Is done. After that, the wafer W is transferred to the resist coating device 17 or 19, and subjected to a resist coating process. Then, the wafer W on which the resist film is formed is transferred to the heating / cooling processing device 46 or 47 (PRE / COL in FIG. 3), and subjected to the heating / cooling process. At this time, the heating / cooling process is performed in a single device, such as the heating / cooling devices 46 and 47, instead of performing the heating process and the cooling process sequentially in the individually provided devices. Since the time from when the W is heated to when it is cooled can be always constant, the heat history given to the wafers W by the heating can be made the same between the wafers W. In the present embodiment, all the heating and cooling processes performed from the resist coating process to the developing process are performed by heating and cooling.
Since the cooling devices 43 to 47 are used, the time required from the application of the resist to the development process can be the same for all the wafers W.

Thereafter, the wafer W is transferred to the extension device 41, and is transferred from the extension device 41 to the peripheral exposure processing device 56 in the interface section 4 by the wafer transfer body 55. Then, the wafer W whose peripheral portion has been exposed by the peripheral exposure device 56 is again transferred to the wafer carrier 5.
5 and is conveyed from the passage opening 102 to the decompression removing device 65 in the first path 60 of the transfer unit 5. At this time, when the shutter 103 is opened and the wafer W is transferred into the reduced pressure removing device 65, the shutter 103 is closed again.

Here, the process of the impurity removing step performed by the reduced pressure removing device 65 will be described in detail. First, the shutter 88 on the interface section 4 side of the casing 65a shown in FIG. 4 is opened, and the wafer W is carried into the casing 65a by the above-described wafer carrier 55. Then, the wafer W is transferred to the elevating pins 81, and then is mounted on the mounting table 71 maintained at a predetermined temperature, for example, 23 ° C., by lowering the elevating pins 81.

Then, the lid 70 is lowered, and the lower end of the lid 70 comes into contact with the mounting table 71 to form the decompression chamber S.
At this time, suction from the suction port 78 is started, and the lid 70 and the mounting table 71 are brought into close contact by the suction force. afterwards,
When the suction device 76 operates and the atmosphere in the decompression chamber S starts to be exhausted from the exhaust pipe 75, an airflow is formed in the decompression chamber S, and the impurities attached to the wafer W are discharged together with the airflow. The set pressure of the suction device 76 at this time is 200 to 200 to remove impurities attached to the wafer W.
It is preferably at most 300 Pa. Then, the pressure in the pressure reducing chamber S is reduced to a predetermined pressure, and after a lapse of a predetermined time, the suction device 76 is stopped. The desired reduced pressure removal process is performed in the above process.

Next, the ventilation pipe 83 is opened, and the decompression chamber S is returned to the original pressure. Then, after the suction of the suction port 78 is stopped, the lid 70 is raised.

Next, the wafer W is lifted by the lifting pins 81 and transferred to the wafer transfer mechanism 66 on the exposure processing apparatus 6 side. Then, when the wafer W passes through the passage port 87 of the casing 65a and is carried out of the reduced-pressure removing device 65, the step of removing impurities from the wafer W is completed.

Thereafter, the casing 6a of the exposure processing device 6
The shutter 117 is opened, and the wafer W is carried into the exposure processing apparatus 6 from the passage opening 115 by the wafer transfer mechanism 66.

Next, the wafer W is exposed to a predetermined pattern in the exposure processing device 6. Then, the wafer W having undergone the exposure is transferred to the wafer transfer mechanism 9 in the second path 61.
By 6, it is carried out from the exposure processing apparatus 6 through the passage 116 into the second path 61. At this time, shutter 1
18 is opened and closed again when the wafer W passes.

Then, the wafer W carried into the second path 61 is moved to a position above the mounting portion 95, transferred to the elevating mechanism 98 of the mounting portion 95, and then once mounted on the mounting portion 95. Is done.

After that, the wafer W is passed from the mounting portion 95 through the opening 105 of the shutter 106 opened by the wafer carrier 55 to the inside of the interface portion 4.
It is transported to the extension device 42 in the processing station 3. Then, the wafer W is transferred by the main transfer device 13 to the heating / cooling processing device 43, 44 or 45, where heating and cooling processes after the exposure process are sequentially performed.

Thereafter, the wafer W is transferred to the developing device 18 or 20, where it is developed. Then, the wafer W that has been subjected to the development processing is supplied to the post-baking device 35 or 36.
And then heated to a cooling device 33 or 34 where it is cooled to a predetermined temperature. And the third
Is transferred to the extension device 32 of the processing device group of
From there, the wafer is returned to the cassette C of the cassette station 2 by the wafer carrier 7. Through the above steps, a series of photolithography steps is completed.

According to the above embodiment, the transfer unit 5 is provided between the interface unit 4 and the exposure processing device 6,
Since the transfer unit 5 is provided with the decompression removing device 65,
Before the wafer W is subjected to the exposure processing, impurities adhering to the resist film on the wafer W can be removed. Therefore, the exposure processing of the wafer W is suitably performed without being affected by impurities such as oxygen.

Since an inert gas from which impurities and fine particles have been removed is supplied into the transfer section 5 and the inside of the transfer section 5 is maintained in a clean atmosphere, impurities and the like may adhere to the wafer W before and after the exposure processing. Is prevented. In particular, the wafer W before the exposure processing can prevent the impurities from adhering again to the wafer W cleaned by the reduced pressure removing device 65 described above.

Since the shutters 103 and 106 are provided between the interface section 4 and the transfer section 5, the atmosphere containing impurities in the interface section 4 is suppressed from flowing into the transfer section 5, and the transfer section 5 is controlled. The atmosphere inside is kept clean.

Further, since the pressure P1 in the transfer section 5 is set lower than the pressure P2 in the exposure processing apparatus 6, the atmosphere in the transfer section 5 flows into the exposure processing apparatus 6 whose atmosphere is strictly controlled. Can be prevented.

Further, since the transfer section 5 is provided separately in the first path 60 and the second path 61, the wafer W is transferred from the interface section 4 to the exposure processing apparatus 6 via the reduced-pressure removing device 65, and is exposed. The steps from returning to the interface unit 4 from the processing device 6 are performed smoothly.

In the above embodiment, the transfer unit 5 is provided between the interface unit 4 and the exposure processing unit 6, and the decompression removing device 65 is provided in the transfer unit 5. May be provided in the interface unit 4. Hereinafter, such a case will be described as a second embodiment.

In the second embodiment, for example, as shown in FIG.
A decompression removing device 120 is provided on the front side of the inside and at a position accessible by the wafer carrier 55. The exposure processing device 6 is provided adjacent to the interface unit 4, and its casing 6a is provided with a single passage port 122 and a shutter 123 that can open and close the passage port 122.

As shown in FIG. 8, a gas supply device 125 having the same configuration as the above-described gas supply device 110 is provided above the interface portion 4 to supply an inert gas into the interface portion 4. In addition, the inside of the interface section 4 can be maintained in a clean atmosphere. Also,
An exhaust pipe 126 is provided below the interface unit 4 as exhaust means for exhausting the atmosphere in the interface unit 4.

Further, between the interface unit 4 and the processing station 3, a partition plate 127 for shutting off the atmosphere in the interface unit 4 and the processing station 3 is provided. At a position of the partition plate 127 facing the extension devices 41 and 42 of the fourth processing device group G4, a passage port 128 and a shutter 129 for opening and closing the passage port 128 are provided.
Is prevented from flowing into the interface section 4.

The process of the photolithography process in the coating and developing system 1 configured as described above will be described. First, an inert gas is supplied from the gas supply device 125 into the interface unit 4, Atmosphere is replaced with a clean atmosphere and maintained.

When the processing of the wafer W is started,
In the same manner as in the first embodiment, the wafer W is transferred from the cassette station 2 to the processing station 3, where an adhesion process, a resist coating process, a heating / cooling process are sequentially performed, and then the wafer W is transferred to the extension device 41.

Then, the wafer W is transferred to the peripheral exposure processing device 56 in the interface section 4 by the wafer transfer body 55, and then transferred to the reduced pressure removing device 120. Then, in the reduced pressure removing device 120, impurities and the like adhering to the wafer W are removed in the same manner as in the first embodiment. Next, the cleaned wafer W is again held by the wafer carrier 55, carried into the exposure processing apparatus 6 through the passage port 122, and subjected to exposure processing. And
After the exposure processing, the wafer W is transferred to the extension device 4 in the processing station 3 by the wafer carrier 55.
2 is transferred.

After that, heating / cooling processing, development processing and the like are performed in the processing station 3 in the same manner as in the first embodiment, and the processing is finally returned to the cassette station 2 to complete a series of photolithography steps. .

As described above, by providing the reduced-pressure removing device 120 in the interface section 4, the device for removing impurities from the wafer W can be attached in the same size as the existing coating processing system. The size of the system can be reduced as compared with the embodiment.

In the above embodiment, the decompression removing device is provided in the transfer unit 5 or the interface unit 4, but may be provided in other places, for example, in the exposure processing unit 6 or the processing station 3. You may. Even in such a case, if impurities are removed from the wafer W before the exposure processing, the exposure processing is suitably performed, and the same effect can be obtained.

Further, in the above embodiment, the process of evaporating the solvent in the resist solution performed by the heating / cooling devices 46 and 47 may be performed by the reduced pressure removing device 65. In this case, for example, as shown in FIG.
6, 47 (PRE / COL) instead of heating / cooling device 130 (PEB / C
OL), a heat treatment device 13 for performing a heat treatment after the development treatment
1, a cooling processing unit 132 for cooling the wafer W after the heat treatment after the exposure is added to the third processing unit group G3. Then, when the wafer W is carried into the decompression removing device 65 and mounted on the mounting table 71, the pressure in the decompression chamber S is reduced to a predetermined pressure at which the solvent of the resist liquid evaporates, for example, 133 Pa, and the resist liquid is reduced. The solvent therein is evaporated, and at that time, the above-described impurity removal treatment is performed. By doing so, both the solvent evaporation process and the impurity removal process can be performed simultaneously in the reduced-pressure removing device 65. Therefore, the conventional heating / cooling device 4
The processing performed in steps 6 and 47 can be performed by the reduced-pressure removing device 65. Further, since another heat treatment apparatus can be added in place of the apparatus for the solvent evaporation processing, the processing capacity in the processing station 3 is improved. In addition, even if the heating / cooling devices 46 and 47 are omitted without increasing the number of other heat treatment devices, the number of heat treatment devices can be reduced, so that the entire processing station 3 can be made compact.

In the above-described embodiment, the coating and developing processing system for the wafer W in the photolithography step of the semiconductor wafer device manufacturing process has been described.
It can also be applied to a coating and developing processing system for a CD substrate.

[0082]

According to the first to fourteenth aspects, it is possible to remove molecular-level impurities such as oxygen, ozone and organic substances and impurities such as fine particles adhering to the coating film on the substrate before the exposure treatment. Exposure processing is suitably performed without being affected by the impurities, and the yield is improved. Also,
Since the solvent in the coating liquid can be evaporated at the same time as the impurity removal processing, the throughput is improved.

In particular, by providing the decompression removing device in the transfer section as in claims 2 to 8, impurities can be removed from the substrate at a position closer to the exposure processing apparatus. Can be done. In addition, a sufficient space for providing a complicated mechanism such as a reduced pressure removing device can be secured, and the system can be simplified.

Further, by providing two paths in the transfer section, the processing of the substrate can be performed smoothly, and the throughput can be improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing an appearance of a coating and developing system according to an embodiment.

FIG. 2 is a front view of the coating and developing system of FIG.

FIG. 3 is a rear view of the coating and developing system of FIG. 1;

4 is a cross-sectional view schematically showing a heating / cooling processing device in the coating and developing processing system 1 of FIG.

FIG. 5 is an explanatory view of a longitudinal section showing a configuration of a reduced-pressure removing device in a transfer section.

6 is an explanatory view of a vertical section viewed from an exposure processing apparatus, showing a state of a flow of an inert gas in a transfer section of the coating and developing processing system of FIG. 1;

FIG. 7 is a plan view showing the appearance of a coating and developing system according to a second embodiment.

8 is an explanatory view of a longitudinal section showing a flow of an inert gas supplied to an interface section of the coating and developing system of FIG. 7;

FIG. 9 is an explanatory diagram showing an example of the arrangement of a heating / cooling processing device in the coating and developing processing system 1 in a case where a solvent of a resist solution is evaporated by a reduced pressure removing device.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 coating / developing processing system 4 interface section 5 transfer section 6 exposure processing apparatus 60 first path 61 second path 65 decompression removal apparatus S decompression chamber K open chamber W wafer

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takahiro Kitano 2655 Tsukure, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Tokyo Electron Kyushu Co., Ltd. JA02 5F046 AA28 CD05 DA29

Claims (14)

[Claims] 1. A coating processing apparatus for forming a coating film on at least a substrate, a developing processing apparatus for developing the substrate, a heat processing apparatus for performing a heat treatment on the substrate, a coating processing apparatus, a developing processing apparatus, and a heat processing apparatus. A processing unit having a first transfer device for transferring the substrate into and out of the apparatus, and a second transfer unit for transferring the substrate on at least a path between the processing unit and an exposure processing device for exposing the substrate. And an interface unit having two transfer devices, wherein the substrate is subjected to the exposure processing,
A vacuum removing device for suctioning and removing impurities adhering to the coating film of the substrate in the chamber;
Coating and development processing system. 2. The apparatus according to claim 1, wherein the interface unit and the exposure processing apparatus are connected via a transfer unit, and the reduced-pressure removing device is provided in the transfer unit. 3. The coating and developing system according to item 1. 3. The coating and developing system according to claim 2, further comprising a gas supply device for supplying an inert gas into the transfer unit, and an exhaust unit for exhausting an atmosphere in the transfer unit. 4. A partition plate for shutting off an atmosphere between the interface unit and the transfer unit, wherein the partition plate has a passage opening for transferring a substrate between the interface unit and the transfer unit. 4. The coating and developing system according to claim 3, wherein the passage is provided with a shutter for opening and closing the passage. 5. The coating and developing system according to claim 2, wherein a pressure in the transfer section is set lower than a pressure in the exposure processing apparatus. 6. The transfer section includes a first path through which a substrate passes when the substrate is transported from the interface section to the exposure processing apparatus, and a substrate that is transported from the exposure processing apparatus to the interface section. And a second path through which the pressure-removal device is provided, wherein the pressure-removal device is provided in the first path. Coating and development processing system. 7. The second transfer device is configured to be able to transfer the substrate to at least the decompression device, and a first path of the transfer unit includes the decompression device and the exposure device. 7. The coating and developing system according to claim 6, wherein a third transfer device for carrying the substrate in and out of the processing device is provided. 8. A second path of the transfer section, a mounting section for mounting a substrate, a fourth transfer apparatus for transferring the substrate into and out of the mounting section and the exposure processing apparatus. The coating and developing system according to claim 7, wherein the second transporting device is configured to be able to carry out the substrate from at least the mounting portion. 9. The coating and developing system according to claim 1, wherein the reduced pressure removing device is provided in the interface unit. 10. A gas supply device for supplying an inert gas to the interface unit, and an exhaust unit for exhausting an atmosphere in the interface unit.
A coating and developing system according to claim 9. 11. A partition plate for shutting off an atmosphere between the processing unit and the interface unit, wherein the partition plate has a passage opening for transferring a substrate between the processing unit and the interface unit. The coating and developing system according to claim 10, wherein the passage is provided with a shutter that allows the passage to be opened and closed. 12. The coating and developing system according to claim 10, wherein a pressure in the interface unit is set lower than a pressure in the exposure processing apparatus. 13. A step of supplying a coating liquid to a substrate to form a coating film on the substrate, a step of irradiating the substrate on which the coating film is formed with predetermined light to expose the substrate, and an exposure process. A coating and developing method including a step of developing the substrate later, the method including a step of removing impurities attached to the substrate from the substrate between the coating film forming step and the exposing step. Coating and developing method. 14. The coating and developing method according to claim 13, wherein the impurity removing step is performed by reducing the pressure in a hermetically closed chamber.