JP3170017B2 - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor device by which a high speed signal is transmitted through a signal line lead extended around the semiconductor device with less transmission loss. CONSTITUTION:Ground leads 60 are respectively arranged at both sides of signal line lead 20 extended around semiconductor devices 100, 101. The signal line leads 20 and the ground leads 60 are provided respectively on the surface of the same dielectric film 70. Then the width of the signal line lead 20, a distance S between side faces of the adjacent signal line lead 20 and ground lead 60, the thickness H of the dielectric film 70 and a specific dielectric constant epsilon are adjusted respectively and the characteristic impedance of the signal line lead 20 is matched with the characteristic impedance of an internal circuit of the semiconductor devices 100, 101.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device containing a high-frequency element such as a semiconductor chip operated by a high-speed signal.

[0002]

2. Description of the Related Art As the semiconductor device, there is a semiconductor device in which a high-frequency element is hermetically sealed in a package made of ceramic or resin, or a semiconductor device in which a high-frequency element is hermetically sealed inside a resin.

In these semiconductor devices, as shown in FIG. 21, metal signal line leads 20 in the form of a narrow band for transmitting a high-speed signal extend around four or two sides thereof. Then, the signal line lead 20 is bent in a straight state or in a gull wing shape (in the drawing, a gull wing shape) or the like, and the signal line lead 2 is formed.
The outer end is connected to the signal circuit connection pad 32a of the substrate 30 by soldering or the like so that the semiconductor device 10 can be mounted on the substrate 30. And the signal line lead 2
0, the high-frequency element 40 housed in the semiconductor device 10
And a signal circuit 32 on the substrate 30 to transmit a high-speed signal.

The signal line lead 2 of the semiconductor device 10
The signal line 22 of the package 12 to which the inner end is connected is provided with a ground plane such as a metal base 16, a metallized layer 14, and a metal plate-shaped cap 50 above or below the package. It has a structure or a microstrip line structure, and the characteristic impedance of the signal line 22 is matched to the characteristic impedance of the signal circuit of the high-frequency element 40 such as 50Ω. The signal line 22 of the package 12 can efficiently transmit a high-frequency signal with little transmission loss such as insertion loss and reflection loss.

[0005]

However, in the semiconductor device 10, the signal line leads 20 extending therearound are simply exposed to the air, and the characteristic impedance of the signal line leads 20 is reduced. The internal impedance of the semiconductor device 10 connected to the inner end of the signal line lead 20, that is, the characteristic impedance of the signal line 22 of the package 12 or the signal impedance of the signal circuit of the high-frequency element 40 housed in the semiconductor device 10 is not matched with 50Ω.

Therefore, the signal line lead 20 extending around the semiconductor device 10 is bent in a straight state or a gull-wing shape or the like, and the outer end of the signal line lead 20 is connected to the signal circuit connection pad 32a of the substrate. In a state where the semiconductor device 10 is mounted on the substrate 30, a high-speed signal is transmitted through the signal line lead 20 to the semiconductor device 10.
When the signal is transmitted between the high-frequency element 40 housed in the substrate and the signal circuit 32 of the board, the insertion loss and reflection loss of the high-speed signal transmitted through the signal line lead 20 are large, and the signal line lead 20 is Could not be transmitted efficiently with little transmission loss. This was remarkable when an ultra-high-speed signal of 10 GHz or more was transmitted through the signal line lead 20.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide a semiconductor device capable of efficiently transmitting a high-speed signal with a small transmission loss to a signal line lead extending around the semiconductor device. The purpose is.

[0008]

In order to achieve the above object, a semiconductor device according to the present invention is a semiconductor device having a signal line lead extending around a semiconductor device containing a high-frequency element. Ground leads are provided side by side on both sides of the lead, and the signal line lead has a coplanar line structure, and the signal line lead and the ground lead having the coplanar line structure are both formed of a dielectric film on the same side. In preparation for the surface, the width W of the signal line lead, the distance S between the side surfaces of the signal line lead and the adjacent ground lead, the relative permittivity ε of the dielectric film, and the thickness H thereof are respectively defined. And adjusting the characteristic impedance of the signal line lead to the characteristic impedance of the internal circuit of the semiconductor device connected to the inner end of the signal line lead. It is characterized in that is.

Here, the coplanar line structure means a line structure in which ground lines are provided on both sides of the signal line and are arranged on the same plane as the signal line.

In the semiconductor device of the present invention, it is preferable that a ground layer is provided on the surface of the dielectric film opposite to the surface provided with both the signal line lead and the ground lead.

[0011]

In the semiconductor device having the above structure, ground leads are arranged side by side on both sides of a signal line lead extending therearound, and the signal line lead has a coplanar line structure. The signal line lead having the coplanar line structure and the ground leads on both sides thereof are both provided on the same surface of the dielectric film. Then, the width W of the signal line lead, the distance S between the side surfaces of the signal line lead and the adjacent ground lead, the relative permittivity ε of the dielectric film and the thickness H thereof are adjusted, respectively. The characteristic impedance of the lead for the signal line is matched to the characteristic impedance of the internal circuit of the semiconductor device connected to the inner end of the lead for the signal line, that is, the signal line provided in the package containing the high-frequency element or the signal circuit of the high-frequency element.

For this reason, the signal line leads extending around the semiconductor device and the ground leads provided on both sides thereof are bent straight or in a gull-wing shape, and are connected to the outer ends of the signal line leads. The outer end of the ground lead is connected to the signal circuit connection pad and the ground circuit connection pad of the board, respectively, and in a state where the semiconductor device is mounted on the board, the high frequency stored in the semiconductor device via the signal line lead. When a high-speed signal is transmitted between the element and the signal circuit of the substrate, insertion loss, reflection loss, and the like of the high-speed signal transmitted through the signal line lead can be reduced.

Further, in the semiconductor device of the present invention having the ground layer on the surface of the dielectric film opposite to the surface having both the signal line lead and the ground lead, The ground layer provided on the surface of the dielectric film opposite to the surface provided with the ground is grounded, and the characteristic impedance of the signal line lead provided on the surface of the dielectric film is grounded by the ground layer inside the semiconductor device. It can be accurately matched to the circuit. And
Insertion loss, reflection loss, and the like of a high-speed signal transmitted through the signal line lead can be further reduced.

[0014]

Next, an embodiment of the present invention will be described with reference to the drawings. 1 to 3 show preferred embodiments of a semiconductor device according to the present invention, respectively. FIGS. 1 and 2 are front sectional views thereof,
FIG. 3 is a partially cutaway plan view thereof. Hereinafter, the semiconductor devices in these figures will be described.

In FIG. 1, reference numerals 100 and 101 denote semiconductor devices containing a high-frequency element 40.

The semiconductor devices 100 and 101 are formed by hermetically sealing a high-frequency element 40 in packages 12 and 120 made of ceramic, metal, or the like.

More specifically, the package 12 shown in FIG.
Is a metal base 16 made of a Cu-W alloy or the like.
In the cavity 18 of the package 12 whose bottom is sealed with
High-frequency element 40 such as a semiconductor chip operated by a high-speed signal
Is housed.

In the package 120 shown in FIG. 2, the package 12 whose bottom is sealed with a ceramic plate 12b is used.
A high-frequency element 40 such as a semiconductor chip operated by a high-speed signal is accommodated in the cavity 18 of the “0”.

The upper portions of the cavities 18 of the packages 12, 120 are hermetically sealed with a metal cap 50. The high frequency element 40 is hermetically sealed in the cavity 18.

On the four sides or two sides (the four sides in the figure) around the semiconductor devices 100 and 101, metal strip-shaped signal line leads 20 are extended.

Specifically, as shown in FIGS. 1 and 2,
Stair surfaces 12a, 120a around packages 12, 120
The signal line lead 20 extends outside the packages 12 and 120 by brazing the inner end of the signal line lead 20 to the outer end of the signal line 22 made of metallization or the like.

The signal circuit electrode 42 of the high frequency element 40 housed in the semiconductor devices 100 and 101 is connected to the inner end of the signal line 22 provided around the cavity 18 of the package via a wire 46 or the like.

The above configuration is the same as that of the conventional semiconductor device. However, in the semiconductor devices 100 and 101 shown in the figure, a narrow strip-shaped ground lead 60 is provided on both sides of the signal line lead 20.
Are arranged on the same plane as the signal line lead 20 at a minute distance from the signal line lead 20 and substantially in parallel with the signal line lead 20. The signal line lead 20 has a coplanar line structure.

More specifically, as shown in FIG. 3, the step surfaces 12a and 120a around the package on both sides of the signal line 22 are provided.
In addition, a narrow ground line 24 made of metallized
The signal lines 22 are arranged in parallel with the signal lines 22 at a very small distance from each other. Then, strip-shaped metal ground leads 60 are brazed to outer ends of the ground line 24 on both sides of the signal line 22, respectively. Then, the ground leads 60 are placed outside the packages 12 and 120 on both sides of the signal line leads 20 at a small distance from the signal line leads 20 and on the same plane as the signal line leads 20. 20 and extend substantially parallel to each other.

As shown in FIG. 3, the inner end of the ground line 24 is connected to a ground electrode 44 of a high-frequency element 40 housed in the cavity 18 of the semiconductor device via a wire 46 or the like.

The signal line leads 20 extending outwardly from the semiconductor devices 100 and 101 and the ground leads 60 arranged in parallel with a small distance on both sides thereof are provided on the surface of the dielectric film 70 on the same side. Each has it.

More specifically, as shown in FIG. 3, the signal line leads 20 extending around the packages 12 and 120 are provided.
And the ground leads 60 on both sides of the
Dielectric film 7 such as heat-resistant polyimide film
0 continuously, and the signal line leads 20
And a ground lead 60 are both provided on the surface of the dielectric film 70 on the same side.

At this time, the stair surface 12 around the package
The dielectric film 70 is continuously applied to the upper surfaces of the inner ends of the signal line leads 20 connected to the outer ends of the signal lines 22a and 120a and the inner ends of the ground leads 60 connected to the outer ends of the ground lines 24. Then, those signal line leads 2
Both the inner end of the zero and the inner end of the ground lead 60 are provided on the surface of the dielectric film 70 on the same side as the above.

The signal line lead 20 having a coplanar line structure provided on the surface of the dielectric film 70 has the characteristic impedance of the width W of the signal line lead 20, the signal line lead 20 and the adjacent ground lead 60. Of the semiconductor device 100, 1 by adjusting the distance S between the side surfaces of the semiconductor device 100, the dielectric constant ε of the dielectric
01 is matched with the characteristic impedance of the signal line 22 of the packages 12 and 120 and the signal circuit of the high-frequency element 40 such as 50Ω. In other words, the characteristic impedance of the signal line lead 20 determined by the parameter values W, S, ε, and H is matched with the characteristic impedance of the internal circuits of the semiconductor devices 100 and 101.

The semiconductor device 10 shown in FIGS.
0 and 101 are configured as described above.

According to these semiconductor devices 100 and 101, as shown in FIG. 4 and FIG.
The signal line lead 20 and the ground lead 60 extending around each of the signal line leads 01 are bent in a straight state or in a gull-wing shape (in the figure, a gull-wing shape) or the like. The ends and the outer ends of the ground leads 60 are connected to the signal circuit connection pads 32 a and the ground circuit connection pads (not shown) of the substrate 30, respectively, and the semiconductor devices 100 and 101 are connected to the substrate 3.
0, and when a high-speed signal is transmitted between the high-frequency element 40 housed in the semiconductor devices 100 and 101 and the signal circuit 32 of the substrate via the signal line lead 20, the signal line lead 20 Characteristic impedance of semiconductor device 10
Since the impedance is matched to the characteristic impedance of the internal circuits 0 and 101, insertion loss and reflection loss of a high-speed signal transmitted through the signal line lead 20 can be reduced. Then, the signal line lead 20 can efficiently transmit a high-speed signal with little transmission loss.

FIGS. 6 and 7 show another preferred embodiment of the semiconductor device of the present invention. FIG. 6 is a front sectional view thereof, and FIG. 7 is a partially cutaway plan view thereof. Hereinafter, the semiconductor device in this figure will be described.

In the illustrated semiconductor device 102, the high-frequency element 400 is hermetically sealed inside the resin 80 as shown in FIG.

On the four sides or two sides (two sides in the figure) of the semiconductor device 102, metal strips 200 made of metal strips are extended.

More specifically, as shown in FIG. 6, the signal line leads 200 extend outward from the resin 80 with the inner ends of the signal line leads 200 embedded in the resin 80.

The inner end of the signal line lead 200 is, as shown in FIG.
00 is directly soldered to the signal circuit electrode 420 by a gang bonding method.

The above structure is the same as that of the conventional semiconductor device. However, in the semiconductor device 102 shown in the figure, a narrow strip-shaped ground lead 600 is provided on both sides of the signal line lead 200 by a small distance from the signal line lead 200. In addition, they are arranged substantially parallel to the signal line leads 200, respectively. The signal line lead 200 has a coplanar line structure.

Specifically, as shown in FIG. 7, the inner ends of the strip-shaped metal ground leads 600 are embedded in the resin 80 on both sides of the inner ends of the signal line leads 200, respectively. Then, these ground leads 600 are placed outside the resin 80 on both sides of the signal line leads 200 by a small distance from the signal line leads 200, so that the signal line leads 2 are formed.
On the same plane as that of the signal line 00, the signal line leads 200 are arranged and extended substantially in parallel with each other.

As shown in FIG. 7, the inner end of the ground lead 600 is connected to the ground electrode 440 of the high-frequency element sealed in the resin 80 by a gang bonding method.
Direct soldering connection.

A signal line lead 200 and a ground lead 6 arranged side by side in parallel with a small distance therebetween.
00 are respectively provided on the surface of the dielectric film 700 on the same side.

Specifically, as shown in FIG.
A dielectric film 700 such as a heat-resistant polyimide film is continuously applied over the upper surfaces of the signal line leads 200 extending outward and the ground leads 600 on both sides thereof. Both the signal line lead 200 and the ground lead 600 are on the same side of the dielectric film 700.
Each is provided on the surface.

In this case, the inner end of the dielectric film 700 is connected to the inner end of the signal line lead 200 and the ground lead 6.
00 and the inner end are embedded in the embedded resin 80. Then, the signal line lead 2 embedded in the resin 80
The dielectric film 700 is continuously applied over the upper surface of the inner end of the signal line lead 200 and the inner end of the ground lead 600, and the inner end of the signal line lead 200 and the ground lead 60.
0 are both provided on the surface of the dielectric film 700 on the same side as the above. And the signal line lead 2
00 and the ground lead 600 are continuously provided on the surface of the dielectric film 700 on the same side over the entire length thereof.

The signal line lead 200 having a coplanar line structure provided on the surface of the dielectric film 700 has its characteristic impedance determined by the width W of the signal line lead 200,
By adjusting the distance S between the side surfaces of the signal line lead 200 and the adjacent ground lead 600, the relative permittivity ε of the dielectric film 700 and the thickness H thereof, the internal circuit of the semiconductor device 102, The impedance is matched to the characteristic impedance of the signal circuit of the element 400 such as 50Ω. In other words, the parameter values W, S, ε,
The characteristic impedance of the signal line lead 200 determined by H is matched to the characteristic impedance of the internal circuit of the semiconductor device 102 such as 50Ω.

The semiconductor device 102 shown in FIG. 6 and FIG.
The configuration is as described above.

According to the semiconductor device 102, as shown in FIG. 8, both the signal line lead 200 and the ground lead 600 extending around the semiconductor device 102 are kept straight or in a gull-wing shape (in the figure, And the outer ends of the signal line leads 200 and the ground leads 600 are connected to the signal circuit connection pads 320a and the ground circuit connection pads (not shown) of the substrate 300. And the semiconductor device 102 was mounted on the substrate 300, and a high-speed signal was transmitted between the high-frequency element 400 housed in the semiconductor device 102 and the signal circuit 320 of the substrate via the signal line lead 200. In this case, the characteristic impedance of the signal line lead 200 matches the characteristic impedance of the signal circuit of the high-frequency element 400. Since is grayed, it is possible to suppress the insertion loss of the high-speed signal transmitted through the signal line lead 200, the reflection loss and the like less. And the signal line lead 2
00 can efficiently transmit a high-speed signal with little transmission loss.

The above semiconductor devices 100, 101, 1
02, the semiconductor film 103 shown in FIGS. 9 and 10, the semiconductor device 104 shown in FIGS. 11 and 12, and the semiconductor film 105 shown in FIGS. , 700 are continuously applied not on the upper surfaces of the signal line leads 20 and 200 and the ground leads (not shown) on both sides but on the lower surfaces thereof. 20 and 200 and the ground lead are on the same side of the dielectric films 70 and 7
00 surface. And
The width W of the signal line leads 20 and 200, the distance S between the side surfaces of the signal line leads 20 and 200 and the adjacent ground lead, the relative permittivity ε of the dielectric films 70 and 700, and the thickness H thereof are shown in FIG. Adjust the dielectric film 7
Signal line leads 20 and 200 provided on the surface 0,700
Characteristic impedance of the semiconductor devices 103, 104, 1
05 may be matched to the characteristic impedance of the internal circuit of 50.

However, in such a case, as shown in FIGS. 10, 12, and 14, the semiconductor devices 103, 10
The signal line leads 2 connected to the outer ends of the signal lines 22 and the outer ends of the ground lines 24 of the packages 12 and 120 of the 4,105 and the signal electrodes and the ground electrodes of the high-frequency elements, respectively.
0, 200 and the lower surfaces of the inner ends of the ground leads (not shown), and the signal circuit pads 32a, 320a on the substrate.
The dielectric films 70 and 700 are also provided over the lower surfaces of the outer ends of the signal line leads 20 and 200 and the outer ends of the ground leads (not shown), which are connected to the ground line and connection pads (not shown) for the ground circuit, respectively. The characteristic impedance of the inner and outer ends of the signal line leads 20 and 200 and the inner and outer ends of the ground leads are continuously applied to the semiconductor devices 103, 104,
It is impossible to exactly match each of the characteristic impedances of the internal circuit 105 to 50Ω or the like.

FIGS. 15 and 16, FIGS. 17 and 18, and FIGS.
And FIG. 20 show a preferred embodiment of another semiconductor device of the present invention, respectively. FIGS. 15, 17 and 19 are front sectional views thereof, and FIGS. FIG. Hereinafter, the semiconductor devices in these figures will be described.

In the semiconductor devices 106, 107, and 108 shown in the figure, the dielectric film 70, opposite to the surface provided with both the signal line leads 20, 200 and the ground leads (not shown) on both sides thereof. Ground layers 90 and 900 made of copper foil or the like are continuously and widely provided on the surface of 700.
The signal line leads 20 and 200 have a coplanar line structure with a ground.

At the outer ends of the ground layers 90 and 900, thin band-shaped ground layer leads 92 and 920 made of the same copper foil or the like as the ground layers 90 and 900 extend. Then, the outer ends of the ground layer leads 92 and 920 are connected to the semiconductor device 1.
The ground layers 90 and 900 can be grounded by soldering or the like to the ground circuit connection pads 34a and 340a of the boards 30 and 300 on which the boards 06, 107 and 108 are mounted.

In other respects, the semiconductor devices 100, 101, and 102 shown in FIGS. 1 to 5 and FIGS. 6 to 8 are configured in the same manner. The semiconductor devices are the same as the semiconductor devices 100, 101, and 102 shown in FIGS. 1 to 5 and FIGS. 6 to 8, respectively, and the same members are denoted by the same reference numerals and description thereof will be omitted.

These semiconductor devices 106, 107, 10
According to FIG. 8, as shown in FIGS. 16, 18, and 20, respectively, the ground layers 90 provided on the surfaces of the dielectric films 70, 700 opposite to the surfaces on which the signal line leads 20, 200 are mounted. , 900 to the ground layer lead 92,
920 is connected to the ground circuit connection pads 34a and 340a of the substrates 30 and 300 and grounded, and the characteristic impedance of the signal line leads 20 and 200 is set to the characteristic impedance of the internal circuit of the semiconductor devices 106, 107 and 108. It is possible to accurately match each to 50Ω or the like. Further, insertion loss and reflection loss of a high-speed signal such as an ultra-high-speed signal of 10 GHz or more transmitting the signal line leads 20 and 200 can be further reduced.

The above-described semiconductor devices 100, 101, 1
02, 103, 104, 105, 106, 107, 10
In FIG. 8, the inner ends of the ground leads 60 and 600 are connected to the ground circuit electrodes 44 and 440 of the high-frequency elements 40 and 400 either directly or via the ground line 24. A semiconductor device containing a high-frequency element that is not provided, or the ground-lead outer end provided on both sides of the signal line lead is connected to the board ground circuit without connecting the inner end of the ground lead to the ground circuit electrode of the higher-frequency element The present invention is also applicable to a semiconductor device used to be connected to a pad and grounded.
2,103,104,105,106,107,108
A semiconductor device having substantially the same operation as that described above can be formed.

[0054]

As described above, in the semiconductor device of the present invention, the signal line leads extending outward from the periphery of the semiconductor device are arranged on both sides of the signal line leads together with the ground leads. To adjust the width W of the signal line lead, the distance S between the side surfaces of the signal line lead and the adjacent ground lead, the relative permittivity ε of the dielectric film and its thickness H, respectively. The characteristic impedance of the signal line lead is matched to the characteristic impedance of the internal circuit of the semiconductor device such as 50Ω.

Further, in the semiconductor device of the present invention in which the ground layer is provided on the surface of the dielectric film opposite to the surface provided with both the signal line lead and the ground lead, the ground layer is used for the dielectric. The signal line leads provided on the surface of the body film have a coplanar line structure with a ground, and the characteristic impedance of the signal line leads is accurately matched to the characteristic impedance of the internal circuit of the semiconductor device.

Therefore, according to the semiconductor device of the present invention,
The signal line leads extending around the semiconductor device and the ground leads provided side by side are bent in a straight state or in a gull-wing shape or the like, and the outer ends of these signal line leads and the ground leads are removed. With the ends connected to the signal circuit connection pads and the ground circuit connection pads of the board, respectively, and in a state where the semiconductor device is mounted on the board, the high-frequency element housed in the semiconductor device and the board are connected via the signal line leads. When a high-speed signal is transmitted to and from a signal circuit, insertion loss, reflection loss, and the like of the high-speed signal transmitted through the signal line lead can be reduced. And
Even for ultra-high-speed signals such as 10 GHz or higher, those high-speed signals can be transmitted efficiently through the signal line leads with little transmission loss.

[Brief description of the drawings]

FIG. 1 is a front sectional view of a semiconductor device of the present invention.

FIG. 2 is a front sectional view of the semiconductor device of the present invention.

FIG. 3 is a partially cutaway plan view of the semiconductor device of the present invention.

FIG. 4 is a front sectional view showing a usage example of the semiconductor device of the present invention.

FIG. 5 is a front sectional view showing a usage example of the semiconductor device of the present invention.

FIG. 6 is a front sectional view of the semiconductor device of the present invention.

FIG. 7 is a partially cutaway plan view of the semiconductor device of the present invention.

FIG. 8 is a front sectional view showing a usage example of the semiconductor device of the present invention.

FIG. 9 is a front sectional view of the semiconductor device of the present invention.

FIG. 10 is a front sectional view showing a usage example of the semiconductor device of the present invention.

FIG. 11 is a front sectional view of the semiconductor device of the present invention.

FIG. 12 is a front sectional view showing a usage example of the semiconductor device of the present invention.

FIG. 13 is a front sectional view of the semiconductor device of the present invention.

FIG. 14 is a front sectional view showing a usage example of the semiconductor device of the present invention.

FIG. 15 is a front sectional view of the semiconductor device of the present invention.

FIG. 16 is a front sectional view showing a usage example of the semiconductor device of the present invention.

FIG. 17 is a front sectional view of the semiconductor device of the present invention.

FIG. 18 is a front sectional view showing a usage example of the semiconductor device of the present invention.

FIG. 19 is a front sectional view of the semiconductor device of the present invention.

FIG. 20 is a front sectional view showing a usage example of the semiconductor device of the present invention.

FIG. 21 is a front sectional view showing an example of use of a conventional semiconductor device.

[Explanation of symbols]

 Reference Signs List 10 semiconductor device 20 signal line lead 30 substrate 32a signal circuit connection pad 34a ground circuit connection pad 40 high frequency element 60 ground lead 70 dielectric film 80 resin 90 ground layer 100, 101, 102, 103, 104 semiconductor device 105 , 106, 107, 108 Semiconductor device 200 Lead for signal line 300 Substrate 320a Connection pad for signal circuit 340a Connection pad for ground circuit 400 High frequency element 600 Ground lead 700 Dielectric film

Continuation of the front page (56) References JP-A-62-274754 (JP, A) JP-A-3-42859 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 23 / 02 H01P 5/08

Claims (2)

(57) [Claims] 1. A periphery of the semiconductor equipment housing the high-frequency element
To a semiconductor device which extends a signal line leads, the ground lead parallel base on both sides of the signal line lead
The signal line lead is provided with a coplanar line structure.
Internal together, and the coplanar line structure and the signal line lead and the ground lead, in preparation for both the surface of the same side of the dielectric film, the characteristic impedance of the previous SL signal line leads, before Symbol semiconductor device to the semiconductor device is characterized in that is matched to the characteristic impedance of the circuit. 2. A semiconductor device according to claim 1, further comprising a ground layer on the surface of the opposite side of the dielectric film and the signal line lead and the ground lead to the plane which includes both.