JP2016216744A - 熱処理ポリマー粉末 - Google Patents
熱処理ポリマー粉末 Download PDFInfo
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Abstract
Description
ポリマー組成物に最も有用なポリマーは、多形半結晶性ポリマー及び/又はポリマーのガラス転移温度を超える温度に付すと半結晶性になることができるポリマーである。本明細書で用いる「半結晶性又は結晶性多形ポリマー」とは、ポリマーが、1つ以上の結晶形で存在することができること、また、ポリマーが、結晶性である、及び/又は熱処理すると、1つ以上の結晶性領域を形成することができることを意味する。こうしたポリマーの例として、限定するものではないが、ポリアリールエーテルケトン(PAEK)若しくは交互ポリケトン又はこれらの混合物を含む。ポリアリールエーテルケトン(PAEK)は、非常に高い融点を有し、多くの場合、様々な形状に結晶化する。これらの両特性により、本発明の熱処理は、粉末化材料が長期間にわたって高温にさらされる用途に用いる場合、特にPAEKポリマーに有用となる。
−A−C(=O)−B−C(=O)− I
−A−C(=O)−D−C(=O)− II
(式中、Aは、p,p’−Ph−O−Ph−基であり、Phは、フェニレン基であり、Bはp−フェニレンであり、Dは、m−フェニレンである)。ポリエーテルケトンケトンにおける式I:式II異性体の比(一般に、T:I比と呼ばれる)を選択することにより、ポリマーの総結晶度を変える。T/I比は、一般に、50:50から90:10まで変動し、いくつかの実施形態では、60/40〜80/20である。高いT:I比(例えば、80:20)ほど、低いT:I比(例えば、60:40)と比べて、高い結晶化度をもたらす。
本発明に従い、結晶の融点を高めることにより、高温での粉体流動性が求められる用途において、より優れた粉体処理及び耐久性をもたらすような方法で、様々な構造を有する多形半結晶性又は結晶形成ポリマーを熱処理する。
T:I比が、60:40のように比較的低い場合、結晶化の速度は、非常に遅いため、ポリマーをそのガラス転移温度より高い温度で一定時間維持することにより、材料を熱処理するか、又はアニールしない限り、一般に、溶融処理ポリマー中に結晶は形成されない。従って、これらのポリマーは、本来半結晶性であっても、非晶質ポリマーと呼ばれることが多い。本発明の目的のための非晶質ポリマーは、X線回析によって結晶相を示さないポリマーを意味する。PEKKの市販のOXPEKK(商標)−SPポリマーグレードは、初め非晶質であるが、ガラス転移温度より高い温度で熱処理すると、部分的に結晶性になる組成物の一例である。
高温で良好な粉体流動性から利益を得られる用途の例として、回転成形、選択的レーザー焼結及び粉末コーティングがあるが、本発明の熱処理方法で製造された粉末の使用はこれらの用途に限定されるわけではない。熱処理を受ける粉末は、粉末の良好な流動性、はっきりとした融点及び耐久性が要求されるあらゆる用途で有用である。驚くことに、これらの熱処理粉末は、最終製品の優れた特性及び優れた外観を提供するだけではなく、この粉末から形成される最終製品の物理的性質を改善することもできることが見出された。
管電流=40mA、管電圧=40kV、Cu K−α線
発散スリット=1mm、平行スリットアナライザー(0.011°)
2θ範囲=5°〜80°、滞留時間=5秒、増分=0.02°
発散Hスリット=10mm、平行ビーム光学系、ソーラースリット=5°
散乱スリット=受光スリット=開
Claims (22)
- 少なくとも2つの異なる融点を有する少なくとも2種の半結晶性の又は結晶形成可能なポリエーテルケトンケトン多形体を含み、選択的レーザー焼結、回転成形又は粉末コーティングに適した被熱処理ポリマー粉末組成物を製造する方法であって、
(a)最も高い融解結晶性多形体の融点より20℃未満低く、かつ、その他の結晶性多形体の融点以上の温度を選択することによって熱処理条件を決定し、
(2)前記の最も高い融解結晶性多形体の融点より20℃未満低く、かつ、前記のその他の結晶性多形体の融点以上の温度で、ポリマー組成物において最も高い融解結晶性多形体の含量をその他の結晶性多形体に対して増加させる時間にわたり、ポリマー組成物を熱処理するステップを少なくとも含み、
前記ポリエーテルケトンケトンが式I又はII:
−A−C(=O)−B−C(=O)− I(異性体T)
−A−C(=O)−D−C(=O)− II(異性体I)
(式中、Aは、p,p’−Ph−O−Ph−基であり、Phは、フェニレン基であり、Bはp−フェニレンであり、Dは、m−フェニレンである)によって表される反復単位を含み、T:I異性体比が、60/40〜80/20の範囲である、前記方法。 - 熱処理したポリマー組成物を粉末に粉砕するステップであって、結晶度を低下させないステップをさらに含む、請求項1に記載の方法。
- 前記半結晶性の又は結晶形成可能な多形体が、熱処理前及び/又は熱処理後に、15〜150μmの重量平均粒度を有する粒子の形態である、請求項1に記載の方法。
- 熱処理の温度が、最も高い融解結晶性多形体の融点より15℃未満低い、請求項1に記載の方法。
- 熱処理の温度が、最も高い融解結晶性多形体の融点より10℃未満低い、請求項1に記載の方法。
- 熱処理の温度が、最も高い融解結晶性多形体の融点より5℃未満低い、請求項1に記載の方法。
- 前記ポリマー組成物が、非多形ポリマー、充填剤、及び繊維からなる群から選択される1つ以上の他の成分をさらに含む、請求項1に記載の方法。
- 請求項1に記載の方法によって製造される、熱処理粉末組成物。
- 請求項8に記載の熱処理粉末組成物を物品又は物品上のコーティングに転換するステップを含む方法。
- 前記熱処理粉末組成物を転換する方法が、選択的レーザー焼結、回転成形、又は粉末コーティングから選択される、請求項9に記載の方法。
- 少なくとも2つの異なる融点を有する少なくとも2つの結晶形を有する1種以上のポリエーテルケトンケトン多形体を含むポリマー粉末組成物を熱処理する方法であって、
最も高い融解結晶形の融点より20℃未満低く、かつ、結晶形の融解範囲内又はそれより高い温度で、ポリマー組成物において最も高い融解結晶形の含量をその他の結晶形に対して増加させる時間にわたり、ポリマー組成物を熱処理するステップを少なくとも含み、
前記ポリエーテルケトンケトンが式I及びII:
−A−C(=O)−B−C(=O)− I(異性体T)
−A−C(=O)−D−C(=O)− II(異性体I)
(式中、Aは、p,p’−Ph−O−Ph−基であり、Phは、フェニレン基であり、Bはp−フェニレンであり、Dは、m−フェニレンである)によって表される反復単位を含み、T:I異性体比が、60/40〜80/20の範囲であり、
得られる粉末組成物が選択的レーザー焼結、回転成形又は粉末コーティングに適したものとなる、前記方法。 - 得られた被熱処理ポリマー組成物が、ポリエーテルケトンケトンポリマー中の結晶の総数に基づき、40%以上の最も高い融解結晶形を含む、請求項11に記載の方法。
- 得られた被熱処理ポリマー組成物が、ポリエーテルケトンケトンポリマー中の結晶の総数に基づき、90%以上の最も高い融解結晶形を含む、請求項11に記載の方法。
- ポリエーテルケトンケトンの最も高い融解結晶形が、18.65°(散乱角、2θ)で固有ピークを有するX線粉末回析パターンを示し、これは、主単位格子の主要結晶面に相当する、請求項11に記載の方法。
- 前記ポリマー組成物をレーザー焼結するステップをさらに含む、請求項11に記載の方法。
- 請求項11に記載の方法によって製造される、被熱処理ポリエーテルケトンケトン粉末組成物。
- 前記熱処理粉末組成物を、選択的レーザー焼結、回転成形、又は粉末コーティングにより物品又は物品上のコーティングに転換するステップを含む、請求項11に記載の方法。
- 前記熱処理温度が、230℃〜300℃の範囲である、請求項1に記載の方法。
- 前記熱処理温度が、270℃〜375℃の範囲である、請求項1に記載の方法。
- 得られた熱処理ポリマー組成物が、ポリエーテルケトンケトン中のI型及びII型の総量に基づき、90%以上のI型ポリエーテルケトンケトンを含む、請求項1に記載の方法。
- I型ポリエーテルケトンケトンが、図1に示すものと同じX線回析パターンを呈示する、請求項1に記載の方法。
- II型ポリエーテルケトンケトンが、図2に示すものと同じX線回析パターンを呈示する、請求項1に記載の方法。
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