JP2014192484A - Semiconductor device manufacturing method and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable formation of a uniform precoat film on a surface of a substrate placement table in a substrate processing chamber.SOLUTION: A semiconductor device manufacturing method comprises: a deposition process of apposing a plurality of processing substrates on the same plane and the same circumference on a substrate mounting part of a substrate placement table provided in a processing chamber and supplying a process gas to the processing chamber in a state where the substrate placement table is rotating to form intended films on the processing substrates; a cleaning process of supplying a cleaning gas to the processing chamber in a state where the processing substrates are not placed on the substrate placement table; and a precoat process of supplying the process gas to the processing chamber in a state where the processing substrates are not placed on the substrate placement table after discharging the cleaning gas from the processing chamber.

Description

  The present invention relates to a method of manufacturing a semiconductor device having a step of processing a substrate, and more particularly to a multi-wafer device of a substrate processing apparatus that performs the steps of a substrate processing method.

  For example, a substrate processing step of forming a thin film on a substrate may be performed as one step of a manufacturing process of a semiconductor device such as a flash memory or a DRAM (Dynamic Random Access Memory). As a substrate processing apparatus for performing such a process, a thin film deposition apparatus including a reaction chamber for simultaneously forming a thin film on a plurality of substrates placed on a susceptor is known (see, for example, Patent Document 1).

Special table 2008-524842

  In the above-described thin film deposition apparatus, particles or by-products generated during the substrate processing may adhere to the substrate mounting table or the processing chamber wall. If substrate processing is continued in a state where by-products or the like are attached to the processing chamber, it is considered that the by-products are attached to the substrate and the quality of the substrate is deteriorated. Therefore, it is necessary to periodically clean the processing chamber. However, since one component of the cleaning gas, for example, F (fluorine) remains in the processing chamber after cleaning, it adversely affects the film quality of the film formed on the processing substrate, so that the processing chamber wall and the substrate mounting table (susceptor) ) Needs to be pre-coated (empty film formation). However, if the precoat film is non-uniform, when the susceptor rotates, stress may concentrate on a thin portion of the precoat film and the precoat film may be peeled off. As a result, there is a concern that particles diffuse into the processing chamber and adversely affect film formation.

  An object of the present invention is to provide a method of manufacturing a semiconductor device and a substrate processing apparatus for forming a precoat film in which a substrate mounting table (susceptor) film is hardly peeled off in a substrate processing chamber.

  In order to solve the above problems, a plurality of processing substrates are placed on the same surface and on the same circumference on a substrate placement portion of a substrate placement table provided in a processing chamber, and the substrate placement table A process gas is supplied to the process chamber in a rotated state to form a desired film on the process substrate, and the process substrate is not mounted on a pre-process substrate mounting table. A cleaning process for supplying a cleaning gas to the chamber; and after the cleaning gas is discharged from the processing chamber, the processing gas is supplied to the processing chamber in a state where the processing substrate is not mounted on the substrate mounting table. A method for manufacturing a semiconductor device having a pre-coating step is provided.

In order to solve the above problems,
A substrate mounting table provided in a processing chamber and having a substrate mounting unit for mounting a plurality of processing substrates on the same surface and on the same circumference; a rotating mechanism for rotating the substrate mounting table; A processing gas supply unit configured to supply a processing gas into the processing chamber; a cleaning gas supply unit configured to supply a cleaning gas into the processing chamber; and a processing substrate mounted on a substrate mounting unit of a substrate mounting table provided in the processing chamber. The processing gas is supplied from the processing gas supply unit to the processing chamber in a state where the substrate mounting table is rotated, a desired film is formed on the processing substrate, and the processing substrate is mounted on the pre-processing substrate mounting table. In a state where the processing substrate is not supplied, the cleaning gas is supplied from the cleaning gas supply unit to the processing chamber, and after the cleaning gas is discharged from the processing chamber, the processing substrate is not mounted on the substrate mounting table. In, there is provided a substrate processing apparatus and a control unit that controls to supply the processing gas into the processing chamber from the processing gas supply unit.

  According to the substrate processing method, the substrate processing apparatus, and the semiconductor device manufacturing method according to the present invention, it is possible to form a uniform precoat film over the entire surface of the susceptor.

1 is a schematic top view of a substrate processing apparatus according to an embodiment of the present invention. 1 is a schematic side view of a substrate processing apparatus according to an embodiment of the present invention. It is a schematic top view of the substrate processing chamber which concerns on one Embodiment of this invention. It is a schematic side view of the substrate processing chamber which concerns on one Embodiment of this invention. It is a flowchart explaining the substrate processing process which concerns on 1st embodiment of this invention. It is a flowchart which shows the process to the board | substrate in the film-forming process in the substrate processing process of this invention. It is a flowchart explaining the cleaning process of this invention. It is explanatory drawing explaining that the board | substrate of this invention moves an area | region.

(1) Configuration of Substrate Processing Apparatus First, the configuration of the substrate processing apparatus according to the present embodiment will be described with reference to FIG. FIG. 1 is a schematic configuration diagram of a multi-wafer type substrate processing apparatus 10 according to the present embodiment.

  An outline of a substrate processing apparatus to which the present invention is applied will be described with reference to FIGS. 1 and 2.

  In the substrate processing apparatus to which the present invention is applied, a FOUP (Front Opening Unified Pod, hereinafter referred to as a pod) is used as a carrier for transporting a substrate such as a processing substrate 200 or a dummy substrate 280 as a product. ing. In the following description, front, rear, left and right are based on FIG. That is, the X1 direction shown in FIG. 1 is the right, the X2 direction is the left, the Y1 direction is the front, and the Y2 direction is the back. In addition, this apparatus is an apparatus for transporting and processing the processing substrate 200 and further transporting the dummy substrate 280, but the processing substrate 200 will be mainly described in the following description.

  As shown in FIGS. 1 and 2, the substrate processing apparatus includes a first transfer chamber 103 configured in a load lock chamber structure that can withstand a pressure (negative pressure) less than atmospheric pressure such as a vacuum state. The casing 101 of the first transfer chamber 103 is formed in a box shape having a pentagonal plan view and closed at both upper and lower ends. In the first transfer chamber 103, a first substrate transfer machine 112 capable of simultaneously transferring two substrates 200 under a negative pressure is installed. Here, the first substrate transfer device 112 may be one that can transfer a single substrate 200. The first substrate transfer machine 112 is configured to be moved up and down by the first substrate transfer machine elevator 115 while maintaining the airtightness of the first transfer chamber 103.

  Of the five side walls of the casing 101, two side walls located on the front side are provided with spare chambers 122 and 123 in which a spare chamber for loading and a spare chamber for unloading can be used in combination with gate valves 126 and 127, respectively. Are connected to each other, and each has a structure capable of withstanding negative pressure. Furthermore, two substrates 200 can be stacked in the reserve chambers (load lock chambers) 122 and 123 by the substrate support stand 140.

In the preliminary chambers 122 and 123, a partition plate (intermediate plate) 141 is installed between the substrates. When a plurality of processed substrates enter the preparatory chamber 122 or 123, the heat of the previously processed substrate being cooled is slowed down due to the thermal effect of the processed substrate that has entered next. Interference can be prevented by the presence of the partition plate 141.

Here, a general method for increasing the cooling efficiency will be described. Cooling water, a chiller, or the like is allowed to flow through the preliminary chambers 122 and 123 and the partition plate 141 to keep the wall surface temperature low, and the cooling efficiency can be increased for any processed substrate in any slot. At negative pressure, if the distance between the substrate and the partition plate is too far, the cooling efficiency due to heat exchange will decrease. Therefore, as a method to improve the cooling efficiency, after placing the substrate support on the substrate support (pin), There is a case where a drive mechanism is provided for moving up and down to approach the spare chamber wall surface.

  A second transfer chamber 121 used at substantially atmospheric pressure is connected to the front side of the preliminary chamber 122 and the preliminary chamber 123 via gate valves 128 and 129. A second substrate transfer machine 124 for transferring the substrate 200 is installed in the second transfer chamber 121. The second substrate transfer machine 124 is configured to be moved up and down by a second substrate transfer machine elevator 131 installed in the second transfer chamber 121 and is reciprocated in the left-right direction by a linear actuator 132. It is comprised so that.

  As shown in FIG. 1, a notch or orientation flat aligning device 106 can be installed on the left side of the second transfer chamber 121. Further, as shown in FIG. 2, a clean unit 118 for supplying clean air is installed in the upper part of the second transfer chamber 121.

  As shown in FIGS. 1 and 2, on the front side of the casing 125 of the second transfer chamber 121, a substrate loading / unloading port 134 for loading and unloading the substrate 200 to and from the second transfer chamber 121. A pod opener 108 is installed. A load port (IO stage) 105 is installed on the opposite side of the pod opener 108 across the substrate loading / unloading port 134, that is, on the outside of the housing 125. The pod opener 108 includes a closure 142 that can open and close the cap 100 a of the pod 100 and close the substrate loading / unloading port 134, and a drive mechanism 136 that drives the closure 142, and the pod placed on the load port 105. By opening and closing the cap 100a of 100, the substrate 200 can be taken in and out of the pod 100. The pod 100 is supplied to and discharged from the load port 105 by an in-process transfer device (OHT or the like) (not shown).

  As shown in FIG. 1, the four side walls located on the rear side (back side) among the five side walls of the first transfer chamber casing 101 are subjected to a desired process on the substrate. , The second processing furnace 202, the third processing furnace 203, and the fourth processing furnace 204 are connected to each other through gate valves 150, 151, 152, and 153, respectively.

  Hereinafter, processing steps using the substrate processing apparatus having the above-described configuration will be described. The following control is controlled by the control unit 300 as shown in FIGS. 1 and 2. The control unit 300 controls the entire apparatus in the above configuration.

  With a maximum of 25 substrates 200 stored in the pod 100, the substrate 200 is transferred to the substrate processing apparatus for performing the processing process by the in-process transfer apparatus. As shown in FIG. 1 and FIG. 2, the pod 100 that has been transported is delivered and placed on the load port 105 from the in-process transport device. The cap 100a of the pod 100 is removed by the pod opener 108, and the substrate outlet of the pod 100 is opened.

  When the pod 100 is opened by the pod opener 108, the second substrate transfer machine 124 installed in the second transfer chamber 121 picks up the substrate 200 from the pod 100 and carries it into the spare chamber 122. Is transferred to the substrate support 140. During this transfer operation, the gate valve 126 on the first transfer chamber 103 side of the preliminary chamber 122 is closed, and the negative pressure in the first transfer chamber 103 is maintained. When the transfer of the substrate 200 stored in the pod 100 to the substrate support base 140 is completed, the gate valve 128 is closed, and the inside of the preliminary chamber 122 is exhausted to a negative pressure by an exhaust device (not shown).

  When the pressure in the preliminary chamber 122 reaches a preset pressure value, the gate valve 126 is opened, and the preliminary chamber 122 and the first transfer chamber 103 communicate with each other. Subsequently, the first substrate transfer machine 112 in the first transfer chamber 103 loads the substrate 200 from the substrate support 140 into the first transfer chamber 103. After the gate valve 126 is closed, the gate valve 151 is opened, and the first transfer chamber 103 and the second processing furnace 202 are communicated with each other. After the gate valve 151 is closed, a processing gas is supplied into the second processing furnace 202 and a desired process is performed on the substrate 200.

  When the processing on the substrate 200 is completed in the second processing furnace 202, the gate valve 151 is opened, and the substrate 200 is carried out to the first transfer chamber 103 by the first substrate transfer machine 112. After unloading, the gate valve 151 is closed.

  Subsequently, the gate valve 126 is opened, the first substrate transfer machine 112 transports the substrate 200 unloaded from the second processing furnace 202 to the substrate support base 140 in the preliminary chamber 123, and the processed substrate 200 is cooled. Is done.

  When the processed substrate 200 is transferred to the preliminary chamber 123 and a preset cooling time has elapsed, the preliminary chamber 123 is returned to approximately atmospheric pressure by the inert gas. When the inside of the preliminary chamber 123 is returned to the substantially atmospheric pressure, the gate valve 128 is opened, and the cap 100 a of the empty pod 100 placed on the load port 105 is opened by the pod opener 108.

Subsequently, the second substrate transfer machine 124 in the second transfer chamber 121 carries the substrate 200 from the substrate support base 140 to the second transfer chamber 121 and passes through the substrate loading / unloading port 134 in the second transfer chamber 121. Store it in the pod 100.

Here, the cap 100a of the pod 100 may continue to be emptied until a maximum of 25 substrates are returned, or may be returned to the pod from which the substrate is taken out without being stored in the empty pod 100.

  By repeating the above operation, when the 25 processed substrates 200 are completely stored in the pod 100, the cap 100 a of the pod 100 is closed by the pod opener 108. The closed pod 100 is transported from the top of the load port 105 to the next process by the in-process transport device.

  The above operation has been described by taking as an example the case where the second processing furnace 202b and the spare chambers 122 and 123 are used. However, the first processing furnace 201, the third processing furnace 203, and the fourth processing furnace 204 The same operation is performed when used.

  In addition, although four processing chambers have been described here, the number of processing chambers may be determined depending on the type of the corresponding substrate and the film to be formed.

In the above-described substrate processing apparatus, the spare chamber 122 is used for carrying in and the spare chamber 123 is used for carrying out. However, the spare chamber 123 may be used for carrying in, and the spare chamber 122 may be used for carrying out, or the spare chamber 122 or the spare chamber may be used. 123 may be used in combination for loading and unloading.

Further, by dedicating the spare chamber 122 or the spare chamber 123 for loading and unloading, cross-contamination can be reduced, and by using them together, the substrate transport efficiency can be improved.

  Further, the same processing may be performed in all the processing furnaces, or different processing may be performed in each processing furnace. For example, when different processing is performed in the first processing furnace 201 and the second processing furnace 202, after the processing on the substrate 200 is performed in the first processing furnace 201, the second processing furnace 202 continues. May be performed. In the case where another processing is performed in the second processing furnace 202 after the processing on the substrate 200 is performed in the first processing furnace 201, the preliminary processing chamber 122 or the preliminary chamber 123 may be used.

  In addition, it is sufficient that at least one of the processing furnaces 201 to 204 is connected to the processing furnace, and the processing furnaces 201 and 204 can be connected in a maximum of four places such as the processing furnaces 201 and 204. Any number of combinations may be connected.

Further, the number of substrates processed by the apparatus may be one or plural. Similarly, in the preliminary chamber 122 or 123, the number of substrates to be cooled (cooled) may be one or plural. The number of processed substrates that can be cooled may be any combination as long as it is within a range of up to four sheets that can be inserted into the slots of the preliminary chambers 122 and 123.

  Alternatively, the substrate may be processed by loading the substrate into the processing furnace by opening and closing the gate valve of the preliminary chamber 122 while the processed substrate is being carried in the preliminary chamber 122 and being cooled. Similarly, the substrate may be processed by loading the substrate into the processing furnace by opening and closing the gate valve of the preliminary chamber 123 while the processed substrate is loaded in the preliminary chamber 123 and cooling is being performed.

Here, if the gate valve on the atmosphere side is opened without sufficient cooling time, the radiant heat of the substrate 200 may damage the spare chamber 122 or 123 or the electrical components connected around the spare chamber. . Therefore, when cooling a high-temperature substrate, the substrate having a large radiant heat that has been processed is transferred into the preliminary chamber 122 and cooling is performed, and the gate valve of the preliminary chamber 123 is opened and closed to place the substrate in the processing furnace. Carry in and process substrates. Similarly, while the processed substrate is being carried into the spare chamber 123 and cooling is being performed, the gate valve of the spare chamber 122 can be opened and closed, and the substrate can be carried into the processing furnace to process the substrate.

(2) Configuration of Process Chamber Subsequently, the configuration of the process chamber 202 as a processing furnace according to the present embodiment will be described mainly with reference to FIGS. FIG. 3 is a schematic perspective view of the reaction vessel according to the present embodiment. FIG. 3 is a schematic cross-sectional view of the processing furnace according to the present embodiment. FIG. 4 is a schematic vertical cross-sectional view of the processing furnace according to the present embodiment, and is a cross-sectional view taken along the line AA ′ of the processing furnace shown in FIG. 3.

(Reaction vessel)
As shown in FIGS. 3 to 4, a process chamber 202 as a processing furnace includes a reaction vessel 203 that is a cylindrical airtight vessel. A processing space 207 for the substrate 200 is formed in the reaction vessel 203. On the upper side of the processing space 207 in the reaction vessel 203, four partition plates 205 extending radially from the center are provided. The four partition plates 205 are configured to partition the processing space 207 into a first processing region 201a, a first purge region 204a, a second processing region 201b, and a second purge region 204b. The first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b are arranged in this order along the rotation direction of a susceptor (substrate mounting table) 217 described later. It is configured to be arranged.

  As will be described later, by rotating the susceptor 217, the substrate 200 placed on the susceptor 217 has a first processing region 201a, a first purge region 204a, a second processing region 201b, and a second purge. It moves in the order of the area 204b. As will be described later, the first processing gas as the first gas is supplied into the first processing region 201a, and the second processing as the second gas is supplied into the second processing region 201b. A gas is supplied, and an inert gas is supplied into the first purge region 204a and the second purge region 204b. Therefore, by rotating the susceptor 217, the first processing gas, the inert gas, the second processing gas, and the inert gas are supplied onto the substrate 200 in this order. The configurations of the susceptor 217 and the gas supply system will be described later.

  A gap with a predetermined width is provided between the end of the partition plate 205 and the side wall of the reaction vessel 203, and the gas can pass through this gap. Through this gap, an inert gas is ejected from the first purge region 204a and the second purge region 204b toward the first processing region 201a and the second processing region 201b. The intrusion of the processing gas into the first purge region 204a and the second purge region 204b can be suppressed, and the reaction of the processing gas can be prevented.

  In the present embodiment, the angle between the partition plates 205 is 90 degrees, but the present invention is not limited to this. That is, in consideration of the supply time of various gases to the substrate 200, for example, the angle between the two partition plates 205 forming the second processing region 201b may be increased or the like may be changed as appropriate. .

  Moreover, although each process area | region was partitioned off with the partition plate 205, it is not restricted to it, What is necessary is just the structure which can prevent mixing the gas supplied to each of process area | region 201a and 201b.

(Susceptor)
As shown in FIGS. 3 to 4, the substrate is configured to be rotatable, with the center of the rotation axis at the center of the reaction vessel 203 at the bottom of the partition plate 205, that is, at the bottom center in the reaction vessel 203. A susceptor 217 as a support portion is provided. The susceptor 217 is formed of, for example, aluminum nitride (AlN), ceramics, quartz, graphite, or the like so that metal contamination of the substrate 200 can be reduced. Further, the friction coefficient of the material of the susceptor 217 may be lower than the friction coefficient of the film formed in the film forming process. The susceptor 217 is electrically insulated from the reaction vessel 203.

  The susceptor 217 is configured to support a plurality of (for example, five in this embodiment) substrates 200 side by side on the same surface and on the same circumference in the reaction vessel 203. Here, “on the same plane” is not limited to the completely same plane. When the susceptor 217 is viewed from above, a plurality of substrates 200 do not overlap each other as shown in FIGS. As long as they are lined up.

  In addition, the substrate mounting portion 217b is provided at the support position of the substrate 200 on the surface of the susceptor 217 corresponding to the number of substrates 200 to be processed. For example, the substrate platform 217b may have a circular shape when viewed from the top surface and a concave shape when viewed from the side surface. In this case, it is preferable that the diameter of the substrate mounting portion 217b is configured to be slightly larger than the diameter of the substrate 200. By placing the substrate 200 in the substrate placing portion 217b, the substrate 200 can be easily positioned, and the substrate 200 jumps out of the susceptor 217 due to the centrifugal force accompanying the rotation of the susceptor 217. It is possible to prevent misalignment caused by the above.

  A cover 219 made of a plasma resistant material is provided in the center of the susceptor at a position facing a cleaning gas supply hole 259 described later. The cover 219 prevents the susceptor from being etched by a plasma cleaning gas described later. The cover 219 will be described later.

  As shown in FIG. 4, the susceptor 217 is provided with a lifting mechanism 268 that lifts and lowers the susceptor 217. The susceptor 217 is provided with a plurality of through holes 217a. A plurality of substrate push-up pins 266 that push up the substrate 200 and support the back surface of the substrate 200 when the substrate 200 is carried into and out of the reaction vessel 203 are provided on the bottom surface of the reaction vessel 203 described above. The through-hole 217a and the substrate push-up pin 266 pass through the substrate push-up pin 266 without contacting the susceptor 217 when the substrate push-up pin 266 is raised or when the susceptor 217 is lowered by the lifting mechanism 268. They are arranged so as to penetrate through the holes 217a.

  The elevating mechanism 268 is provided with a rotating mechanism 267 that rotates the susceptor 217. A rotation shaft (not shown) of the rotation mechanism 267 is connected to the susceptor 217, and the susceptor 217 can be rotated by operating the rotation mechanism 267. A control unit 300 described later is connected to the rotation mechanism 267 through a coupling unit 267a. The coupling portion 267a is configured as a slip ring mechanism that electrically connects the rotating side and the fixed side with a metal brush or the like. This prevents the rotation of the susceptor 217 from being hindered. The controller 300 is configured to control the energization of the rotation mechanism 267 so that the susceptor 217 is rotated at a predetermined speed for a predetermined time. As described above, by rotating the susceptor 217, the substrate 200 placed on the susceptor 217 has the first processing region 201 a, the first purge region 204 a, the second processing region 201 b, and the second purge. The region 204b is moved in this order.

(Heating part)
Inside the susceptor 217, a heater 218 as a heating unit is integrally embedded so that the substrate 200 can be heated. When electric power is supplied to the heater 218, the surface of the substrate 200 is heated to a predetermined temperature (for example, from room temperature to about 1000 ° C.). A plurality (for example, five) of heaters 218 may be provided on the same surface so as to individually heat the respective substrates 200 placed on the susceptor 217.

  The susceptor 217 is provided with a temperature sensor 274. A temperature regulator 223, a power regulator 224, and a heater power source 225 are electrically connected to the heater 218 and the temperature sensor 274 via a power supply line 222. Based on the temperature information detected by the temperature sensor 274, the power supply to the heater 218 is controlled.

(Gas supply part)
A gas supply unit 250 including a first processing gas introduction unit 251, a second processing gas introduction unit 252, an inert gas introduction unit 253, and a cleaning gas introduction unit 258 is provided above the reaction vessel 203. It has been. The gas supply unit 250 is airtightly provided in an opening opened on the upper side of the reaction vessel 203. The first process gas introduction part 251 is provided with a first gas outlet 254 from the center of the susceptor toward the outer periphery of the susceptor. The second processing gas introduction part 252 is provided with a second gas outlet 255 from the center of the susceptor toward the outer periphery of the susceptor. A cleaning gas supply hole 259, which is an end of the cleaning gas introduction unit 258, is provided at the bottom of the gas supply unit 250.

The gas supply unit 250 supplies the first processing gas from the first processing gas introduction unit 251 into the first processing region 201a, and the second processing gas introduction unit 252 supplies the first processing gas into the second processing region 201b. The second processing gas is supplied, and the inert gas is supplied from the inert gas introduction unit 253 into the first purge region 204a and the second purge region 204b. The gas supply unit 250 can supply each processing gas and inert gas individually to each region without mixing them, and can supply each processing gas and inert gas to each region in parallel. It is configured as follows.

(Processing gas supply system)
A first gas supply pipe 232 a is connected to the upstream side of the first processing gas introduction part 251. On the upstream side of the first gas supply pipe 232a, a source gas supply source 232b, a mass flow controller (MFC) 232c as a flow rate controller (flow rate control unit), and a valve 232d as an on-off valve are provided in order from the upstream direction. It has been.

From the first gas supply pipe 232a, as the first gas (first processing gas), for example, a silicon-containing gas is supplied from the mass flow controller 232c, the valve 232d, the first gas introduction unit 251, and the first gas injection. It is supplied into the first processing region 201a via the outlet 254. As the silicon-containing gas, for example, a trisilylamine ((SiH ₃ ) ₃ N, abbreviation: TSA) gas can be used as a precursor. Note that the first processing gas may be any of solid, liquid, and gas at normal temperature and pressure, but is described as a gas here. When the first processing gas is liquid at normal temperature and pressure, a vaporizer (not shown) may be provided between the source gas supply source 232b and the mass flow controller 232c.

As the silicon-containing gas, for example, hexamethyldisilazane (C ₆ H ₁₉ NSi ₂ , abbreviation: HMDS), which is an organic silicon material, can be used in addition to TSA.
For these first gases, a material having a higher degree of adhesion than the second gas described later is used.

  A second gas supply pipe 233 a is connected to the upstream side of the second processing gas introduction part 252. On the upstream side of the second gas supply pipe 233a, a source gas supply source 233b, a mass flow controller (MFC) 233c that is a flow rate controller (flow rate control unit), and a valve 233d that is an on-off valve are provided in order from the upstream direction. It has been.

From the second gas supply pipe 233a, as the second gas (second processing gas, reaction gas), for example, oxygen (O ₂ ) gas, which is an oxygen-containing gas, is supplied from the mass flow controller 233c, the valve 233d, and the second gas. The gas is supplied into the second processing region 201b via the gas introduction part 252 and the second gas ejection port 255. The oxygen gas that is the second processing gas is brought into a plasma state by the plasma generation unit 206 and exposed to the substrate 200. The oxygen gas that is the second processing gas may be activated by adjusting the temperature of the heater 218 and the pressure in the reaction vessel 203 within a predetermined range. Note that ozone (O ₃ ) gas or water vapor (H ₂ O) may be used as the oxygen-containing gas.
For the second gas, a material having a lower adhesion than the first gas is used.

  A first process gas supply system (also referred to as a silicon-containing gas supply system) 232 is mainly configured by the first gas supply pipe 232a, the mass flow controller 232c, and the valve 232d. Note that the source gas supply source 232b, the first process gas inlet 251 and the first gas jet outlet 254 may be included in the first process gas supply system. Further, a second processing gas supply system (also referred to as an oxygen-containing gas supply system) 233 is mainly configured by the second gas supply pipe 233a, the mass flow controller 233c, and the valve 233d. Note that the source gas supply source 233b, the second gas inlet 252 and the second gas outlet 255 may be included in the second processing gas supply system. A processing gas supply system is mainly configured by the first gas supply system and the second gas supply system.

(Inert gas supply system)
A first inert gas supply pipe 234 a is connected to the upstream side of the inert gas introduction part 253. On the upstream side of the first inert gas supply pipe 234a, in order from the upstream direction, an inert gas supply source 234b, a mass flow controller (MFC) 234c that is a flow rate controller (flow rate control unit), and a valve that is an on-off valve 234d is provided.

From the first inert gas supply pipe 234a, an inert gas composed of, for example, nitrogen (N ₂ ) gas, a mass flow controller 234c, a valve 234d, an inert gas introduction unit 253, and a first inert gas jet outlet. The gas is supplied into the first purge region 204a and the second purge region 204b through 256 and the second inert gas outlet 257, respectively. The inert gas supplied into the first purge region 204a and the second purge region 204b acts as a purge gas in the film forming step (S106) described later. In addition to N ₂ gas, for example, a rare gas such as helium (He) gas, neon (Ne) gas, or argon (Ar) gas can be used as the inert gas.

  The downstream end of the second inert gas supply pipe 235a is connected to the downstream side of the valve 232d of the first gas supply pipe 232a. In order from the upstream direction, an inert gas supply source 235b, a mass flow controller (MFC) 235c that is a flow rate controller (flow rate control unit), and a valve 235d that is an on-off valve are provided.

From the second inert gas supply pipe 235a, for example, N ₂ gas is used as an inert gas, such as a mass flow controller 235c, a valve 235d, a first gas supply pipe 232a, a first gas inlet 251 and a first gas. It is supplied into the first processing region 201a via the jet port 254. The inert gas supplied into the first processing region 201a acts as a carrier gas or a dilution gas in the film forming step (S106).

  The downstream end of the third inert gas supply pipe 236a is connected to the downstream side of the valve 233d of the second gas supply pipe 233a. In order from the upstream direction, an inert gas supply source 236b, a mass flow controller (MFC) 236c that is a flow rate controller (flow rate control unit), and a valve 236d that is an on-off valve are provided.

From the third inert gas supply pipe 236a, for example, N ₂ gas is used as an inert gas, such as a mass flow controller 236c, a valve 236d, a second gas supply pipe 233a, a second gas inlet 252 and a second gas. It is supplied into the second processing region 201b through the jet outlet 255. The inert gas supplied into the second processing region 201b acts as a carrier gas or a dilution gas in the film forming step (S106), similarly to the inert gas supplied into the first processing region 201a.

  A first inert gas supply system 234 is mainly configured by the first inert gas supply pipe 234a, the inert gas supply source 234b, the mass flow controller 234c, and the valve 234d. Note that the inert gas inlet 253, the first inert gas outlet 256, and the second inert gas outlet 257 may be included in the first inert gas supply system.

Further, a second inert gas supply system 235 is mainly configured by the second inert gas supply pipe 235a, the inert gas supply source 235b, the mass flow controller 235c, and the valve 235d. Note that the inert gas supply source 235b, the mass flow controller 235c, the first gas supply pipe 232a, the first gas inlet, and the first gas outlet may be included in the second inert gas.

Further, the third inert gas supply system 236 is mainly configured by the third inert gas supply pipe 236a, the inert gas supply source 236b, the mass flow controller 236c, and the valve 236d. Note that the inert gas supply source 236a, the mass flow controller 236c, the second gas supply pipe 233a, the second gas inlet 252 and the second gas outlet 255 are included in the third inert gas supply system. May be. And the inert gas supply system is mainly comprised by the 1st to 3rd inert gas supply system.

(Cleaning gas supply system)
A cleaning gas supply pipe 237 a is connected to the upstream side of the cleaning gas introduction part 258. On the upstream side of the cleaning gas 237a, a cleaning gas supply source 237b, a mass flow controller (MFC) 237c that is a flow rate controller (flow rate control unit), a valve 237d that is an on-off valve, and a plasma generation unit 237e are sequentially arranged from the upstream direction. Is provided.

  From the first gas supply pipe 232a, for example, nitrogen trifluoride (NF3) gas is supplied as a cleaning gas. The cleaning gas is supplied to the reaction vessel 203 via the mass flow controller 237c, the valve 237d, the remote plasma generation unit 237e, the cleaning gas introduction unit 238, and the cleaning gas supply hole 259. The cleaning gas is brought into a plasma state by the remote plasma generation unit 237e.

  As shown in FIG. 3, the cleaning gas introduction unit 258 is disposed at the center of the inert gas introduction unit 253 and between the first process gas introduction unit 251 and the second process gas introduction unit 252. .

(cover)
A cover 219 made of a plasma resistant material is provided in the center of the susceptor at a position facing a cleaning gas supply hole 259 described later.

  When the substrate 200 is processed by this apparatus, fixed parts due to liquefaction or solidification of the gas, by-products generated by the reaction of the gas, and the like are in contact with the gas inside the susceptor 217 and the processing chamber wall. It will stick.

As shown in FIG. 4, the position facing the cleaning gas supply hole 259 is a position where the first gas and the second gas are not supplied, so that the cleaning object does not adhere so much.
Therefore, a cover 219 made of a plasma resistant material is provided at a position facing the cleaning gas supply hole 259. With such a configuration, it is possible to prevent excessive etching even at a position facing the cleaning gas supply hole.

  The cover 219 is fixed by fitting with a counterbore provided in the center of the susceptor 217. By doing in this way, the shift | offset | difference by rotation of the susceptor 217 is prevented, and replacement | exchange of the cover 219 is made easy.

  The cover 219 is preferably formed in a circular shape when viewed from the cleaning gas supply hole 259. The end portion is a portion where the first and second gases do not come into contact with each other, and is set in the radial center direction of the susceptor 217 from the first gas outlet 254 and the second gas outlet 255. By setting it as such a structure, the location where a cleaning target object does not adhere can be made into a plasma-resistant material. The cover 219 may be omitted.

(Exhaust system)
As shown in FIG. 4, the reaction vessel 203 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing regions 201a and 201b and the purge regions 204a and 204b. The exhaust pipe 231 is evacuated through a flow rate control valve 245 as a flow rate controller (flow rate control unit) for controlling the gas flow rate and an APC (Auto Pressure Controller) valve 243 as a pressure regulator (pressure adjustment unit). A vacuum pump 246 serving as an exhaust device is connected, and is configured so that vacuum exhaust can be performed so that the pressure in the reaction vessel 203 becomes a predetermined pressure (degree of vacuum). The APC valve 243 is an open / close valve that can open and close the valve to evacuate or stop evacuation of the reaction vessel 203, and further adjust the valve opening to adjust the pressure. An exhaust system is mainly configured by the exhaust pipe 231, the APC valve 243, and the flow rate control valve 245. Note that a vacuum pump 246 may be included in the exhaust system.

(Control part)
The control unit 300 that is a control unit (control means) controls each component described above.

  Next, the peripheral structure of the susceptor 217 and the operation of the susceptor 217 will be described with reference to FIG.

  A first transfer chamber casing 101 is provided adjacent to the substrate processing casing 203 via any one of the gate valves 150 to 154. For example, when the gate valve 151 is opened, the inside of the substrate processing casing 203 and the first transfer chamber casing 101 communicate with each other. The first substrate transfer machine 112 transports the substrate 200 from the pod to the placement unit 217 b of the susceptor 217 via the second substrate transfer machine 124.

Here, the susceptor 217 is formed with a plurality of placement portions 217 b on which the substrate 200 is placed. In the present embodiment, five mounting portions 217b are provided so that each of the mounting portions 217b is equidistant with respect to the forward clockwise direction (for example, an interval of 72 degrees). The part 217b is rotated together.

(3) Substrate Processing Step Subsequently, as a step of the semiconductor manufacturing process according to the present embodiment, a substrate processing step performed using the process chamber 202a including the reaction vessel 203 described above will be described with reference to FIGS. I will explain. FIG. 5 is a flowchart showing a substrate processing process according to the present embodiment, and FIG. 6 is a flowchart showing a process on the substrate in the film forming process in the substrate processing process according to the present embodiment. In the following description, the operation of each part of the process chamber 202 of the substrate processing apparatus 10 is controlled by the control unit 300.

  Here, trisilylamine (TSA) that is a silicon-containing gas is used as the first gas, oxygen gas that is an oxygen-containing gas is used as the second processing gas, and an SiO film is formed as an insulating film on the substrate 200. An example of forming will be described.

(Substrate loading / placement step (S102))
First, the substrate push-up pin 266 is raised to the transfer position of the substrate 200, and the substrate push-up pin 266 is passed through the through hole 217a of the susceptor 217. As a result, the substrate push-up pin 266 is in a state of protruding by a predetermined height from the surface of the susceptor 217. Subsequently, the gate valve 151 is opened, and a predetermined number (for example, five) of substrates 200 (processing substrates) are loaded into the reaction vessel 203 using the vacuum transfer robot 112. Then, the susceptor 217 is placed on the same surface of the susceptor 217 so that the substrates 200 do not overlap with each other about the rotation axis (not shown). Accordingly, the substrate 200 is supported in a horizontal posture on the substrate push-up pins 266 protruding from the surface of the susceptor 217.

  When the substrate 200 is loaded into the reaction container 203, the vacuum transfer robot 112 is retracted out of the reaction container 203, the gate valve 151 is closed, and the reaction container 203 is sealed. Thereafter, the substrate push-up pin 266 is lowered to place the susceptors 217 on the bottom surfaces of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. The substrate 200 is placed on the portion 217b.

When the substrate 200 is carried into the reaction vessel 203, N ₂ gas as a purge gas is supplied from the inert gas supply system into the reaction vessel 203 while the reaction vessel 203 is exhausted by the exhaust unit. preferable. That is, by operating the vacuum pump 246 and opening the APC valve 243, while evacuating the inside of the reaction vessel 203, at least the valve 234 d of the first inert gas supply system is opened, whereby N _{2 is} introduced into the reaction vessel 203. It is preferable to supply gas. Thereby, it is possible to suppress intrusion of particles into the processing region 201 and adhesion of particles onto the substrate 200. Here, an inert gas may be further supplied from the second inert gas supply system and the third inert gas supply system. The vacuum pump 246 is always operated at least from the substrate loading / mounting step (S102) to the completion of the substrate unloading step (S112) described later.

(Temperature increase / pressure adjustment process (S104))
Subsequently, power is supplied to the heater 218 embedded in the susceptor 217, and the surface of the substrate 200 is heated to a predetermined temperature (for example, 200 ° C. or higher and 400 ° C. or lower). At this time, the temperature of the heater 218 is adjusted by controlling the power supply to the heater 218 based on the temperature information detected by the temperature sensor 274.

  Note that in the heat treatment of the substrate 200 made of silicon, if the surface temperature is heated to 750 ° C. or higher, impurities are diffused in a source region, a drain region, or the like formed on the surface of the substrate 200, so that circuit characteristics deteriorate. However, the performance of the semiconductor device may be degraded. By limiting the temperature of the substrate 200 as described above, diffusion of impurities in the source region and drain region formed on the surface of the substrate 200, deterioration in circuit characteristics, and reduction in performance of the semiconductor device can be suppressed.

  Further, the inside of the reaction vessel 203 is evacuated by a vacuum pump 246 so that the inside of the reaction vessel 203 has a desired pressure (for example, 0.1 Pa to 300 Pa, preferably 20 Pa to 40 Pa). At this time, the pressure in the reaction vessel 203 is measured by a pressure sensor (not shown), and the opening degree of the APC valve 243 is feedback controlled based on the measured pressure information.

  Further, while the substrate 200 is heated, the rotation mechanism 267 is operated to start the rotation of the susceptor 217. At this time, the rotation speed of the susceptor 217 is controlled by the controller 300. The rotation speed of the susceptor 217 is, for example, 1 rotation / second. By rotating the susceptor 217, the substrate 200 starts moving in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. 200 passes.

(Film formation process (S106))
Next, TSA gas as the first processing gas is supplied into the first processing region 201a, oxygen gas as the second processing gas is supplied into the second processing region 201b, and silicon on the substrate 200 is supplied. The film forming process will be described taking the process of forming an oxide film (SiO film) as an example. In the following description, TSA gas supply, oxygen gas supply, and inert gas are supplied to each region in parallel.

When the substrate 200 is heated to reach a desired temperature and the susceptor 217 reaches a desired rotational speed, at least the valves 232d, 233d, and 234d are simultaneously opened, and the processing region 201 and the purge region 204 for the processing gas and the inert gas are opened. Start supplying to That is, the valve 232d is opened to start supplying the TSA gas into the first processing region 201a. At the same time, the valve 233d is opened to supply the oxygen gas into the second processing region 201b. N ₂ gas which is an inert gas is supplied into the one purge region 204a and the second purge region 204b. At this time, the APC valve 243 is appropriately adjusted so that the pressure in the reaction vessel 203 is, for example, a pressure in the range of 10 Pa to 1000 Pa. At this time, the temperature of the heater 218 is set to such a temperature that the temperature of the substrate 200 becomes a temperature within a range of 200 ° C. to 400 ° C., for example.

  That is, the exhaust pipe 231 is opened while the valve 232d is opened and the TSA gas is supplied from the first gas supply pipe 232a to the first processing region 201a via the first gas introduction part 251 and the first gas jet outlet 254. Exhaust from. At this time, the mass flow controller 232c is adjusted so that the flow rate of the TSA gas becomes a predetermined flow rate. Note that the supply flow rate of the TSA gas controlled by the mass flow controller 232c is, for example, a flow rate in the range of 100 sccm to 5000 sccm.

When supplying the TSA gas into the first processing region 201a, the valve 235d is opened, and N ₂ gas as a carrier gas or a dilution gas is supplied from the second inert gas supply pipe 235a into the first processing region 201a. It is preferable to supply to. Thereby, supply of TSA gas into the 1st processing field 201a can be promoted.

  Simultaneously with the valve 232d, the valve 233d is opened, and oxygen gas is supplied from the second gas supply pipe 233a to the second processing region 201b through the second gas introduction part 252 and the second gas outlet 255. Then, the exhaust pipe 231 is exhausted. At this time, the mass flow controller 233c is adjusted so that the flow rate of the oxygen gas becomes a predetermined flow rate. Note that the oxygen gas supply flow rate controlled by the mass flow controller 233c is, for example, a flow rate in the range of 1000 sccm to 10,000 sccm.

When supplying oxygen gas into the second processing region 201b, the valve 236d is opened, and N ₂ gas as carrier gas or dilution gas is supplied from the third inert gas supply pipe 236a into the second processing region 201b. It is preferable to supply to. Thereby, supply of oxygen gas into the second processing region 201b can be promoted.

Further, the valve 232d and the valve 233d are opened, the valve 234d is further opened, and N ₂ gas which is an inert gas as a purge gas is supplied from the first inert gas supply pipe 234c to the inert gas introduction unit 253, the first inert gas. The exhaust gas is exhausted while being supplied to the first purge region 204a and the second purge region 204b through the active gas outlet 256 and the second inert gas outlet 257, respectively. At this time, the mass flow controller 234c is adjusted so that the flow rate of the N ₂ gas becomes a predetermined flow rate. Note that, through the gap between the end portion of the partition plate 205 and the side wall of the reaction vessel 203, the first processing region 201a and the second processing region 201b from the first purge region 204a and the second purge region 204b. By injecting the inert gas toward the inside, it is possible to suppress intrusion of the processing gas into the first purge region 204a and the second purge region 204b.

  With the start of gas supply, high-frequency power is supplied from a high-frequency power source (not shown) to the plasma generation unit 206 provided above the second processing region 201b. The oxygen gas that has been supplied into the second processing region 201b and passed below the plasma generation unit 206 is in a plasma state in the second processing region 201b, and the active species contained therein are supplied to the substrate 200.

  Oxygen gas has a high reaction temperature, and it is difficult to react at the processing temperature of the substrate 200 and the pressure in the reaction vessel 203 as described above. However, as in this embodiment, the oxygen gas is brought into a plasma state, and the active species contained therein are When supplied, the film forming process can be performed even in a temperature range of 400 ° C. or less, for example. When the required processing temperature is different between the first processing gas and the second processing gas, it is necessary to increase the processing temperature by controlling the heater 218 in accordance with the temperature of the processing gas having the lower processing temperature. The other processing gas may be supplied in a plasma state. By using plasma in this way, the substrate 200 can be processed at a low temperature, and for example, thermal damage to the substrate 200 having a wiring weak to heat such as aluminum can be suppressed. In addition, generation of foreign substances such as products due to incomplete reaction of the processing gas can be suppressed, and the uniformity and withstand voltage characteristics of the thin film formed on the substrate 200 can be improved. In addition, productivity of substrate processing can be improved, for example, the oxidation processing time can be shortened by the high oxidizing power of oxygen gas in a plasma state.

As described above, by rotating the susceptor 217, the substrate 200 repeats moving in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. Therefore, as shown in FIG. 8, the substrate 200 is alternately supplied with a TSA gas, an N ₂ gas (purge), a plasma oxygen gas, and an N 2 gas (purge) alternately a predetermined number of times. Will be implemented. Here, the details of the film forming process sequence will be described with reference to FIG.

(First process gas region passage (S202))
First, TSA gas is supplied to the surface of the substrate 200 that has passed through the first processing region 201 a and the portion of the susceptor 217 where the substrate is not placed, and a silicon-containing layer is formed on the substrate 200.

(First purge region passage (S204))
Next, the substrate 200 on which the silicon-containing layer is formed passes through the first purge region 204a. At this time, N ₂ gas which is an inert gas is supplied to the first purge region.

(Second process gas region passage (S206))
Next, oxygen gas is supplied to the portion of the substrate 200 and the susceptor 217 that have not passed the second processing region 201b. A silicon oxide layer (SiO layer) is formed on the substrate 200. That is, the oxygen gas reacts with a part of the silicon-containing layer formed on the substrate 200 in the first processing region 201a. As a result, the silicon-containing layer is oxidized and modified into a SiO layer containing silicon and oxygen.

(Second purge region passage (S208))
Then, the substrate 200 on which the SiO layer is formed in the second processing region 201b passes through the second purge region 204b. At this time, N ₂ gas which is an inert gas is supplied to the second purge region.

(Check number of cycles (S210))
In this way, one rotation of the susceptor 217 is defined as one cycle, that is, one cycle passes through the substrate 200 through the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. By performing this cycle at least once, a SiO film having a predetermined thickness can be formed on the substrate 200.
Here, it is confirmed whether or not the above-described cycle has been performed a predetermined number of times.
When the cycle is performed a predetermined number of times, it is determined that the desired film thickness has been reached, and the film forming process is terminated. If the cycle has not been performed a predetermined number of times, it is determined that the desired film pressure has not been reached, and the process returns to S202 to continue the cycle process. The predetermined number of times is a reference number of overhaul maintenance of the substrate processing apparatus, for example.

  In S210, the above-described cycle is performed a predetermined number of times, and after determining that the SiO film having a desired film thickness is formed on the substrate 200, at least the valve 234a and the valve 233d are closed, and the first TSA gas and oxygen gas Supply to the processing area 201a and the second processing area 201b is stopped. At this time, power supply to the plasma generation unit 206 is also stopped. Further, the energization amount of the heater 218 is controlled to lower the temperature, or the energization to the heater 218 is stopped. Further, the rotation of the susceptor 217 is stopped.

(Substrate unloading step (S108))
When the film forming step 106 is completed, the substrate is unloaded as follows.
First, the substrate push-up pins 266 are raised, and the substrate 200 is supported on the substrate push-up pins 266 that protrude from the surface of the susceptor 217. Then, the gate valve 244a is opened, the substrate 200 is carried out of the reaction vessel 203 using the vacuum transfer robot 112, and the substrate processing process according to this embodiment is completed. In the above, the conditions such as the temperature of the substrate 200, the pressure in the reaction vessel 203, the flow rate of each gas, the power applied to the plasma generation unit 206, the processing time, and the like are the material and thickness of the film to be modified, etc. Adjust as desired.

(Confirmation of processing frequency (S110))
In S110, it is confirmed whether or not the cycle from the substrate carry-in / placement step (S102) to the substrate carry-out step (S108) has been performed a predetermined number of times. Here, the predetermined number of times refers to the number of times that the film forming process is continued and the cleaning is required.
This number is set in advance by deriving the number of processes that require cleaning by simulation or the like.

(Cleaning step (S112))
The process chamber 202 is cleaned after a predetermined number of cycles from the substrate loading / mounting step (S102) to the substrate unloading step (S108), that is, without the processing substrate 200 being mounted on the substrate mounting table.
Specifically, the following processing shown in FIG. 7 is performed.

(Dummy substrate loading / mounting step (S302))
The dummy substrate 280 is mounted on the mounting portion 217b of the susceptor 217 in the same procedure as when the processing substrate is mounted.

(Temperature increase / pressure adjustment step (S304))
Subsequently, power is supplied to the heater 218 embedded in the susceptor 217 to heat the surface of the substrate 200 to a predetermined temperature.

  Further, the inside of the reaction vessel 203 is evacuated by a vacuum pump 246 so that the inside of the reaction vessel 203 has a desired pressure (for example, 0.1 Pa to 300 Pa, preferably 20 Pa to 40 Pa). At this time, the pressure in the reaction vessel 203 is measured by a pressure sensor (not shown), and the opening degree of the APC valve 243 is feedback controlled based on the measured pressure information.

  Further, while rotating the dummy substrate 280, the rotation mechanism 267 is operated to start the rotation of the susceptor 217. At this time, the rotation speed of the susceptor 217 is controlled by the controller 300. The rotation speed of the susceptor 217 is, for example, 1 rotation / second. By rotating the susceptor 217, the substrate 200 starts moving in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. 200 will pass.

(Gas supply step (S306))
Next, a cleaning gas is supplied to the reaction vessel 203. At the same time, a purge gas is supplied to each processing region.

Specifically, it is as follows.
When the substrate 200 is heated to reach a desired temperature and the susceptor 217 reaches a desired rotation speed, at least the valves 234d, 235d, 236d, and 237d are opened, and supply to the processing region 201 and the purge region 204 is started. . That is, with the valve 232d closed and the valve 235d opened, supply of purge gas into the first processing region 201a is started. With the valve 233d closed and the valve 236d opened, the purge gas is supplied into the second processing region 201b. Further, the valve 234d is opened to supply N ₂ gas which is an inert gas into the first purge region 204a and the second purge region 204b. Next, electric power is applied to the plasma generation unit 237e, and further, the valve 237d is opened, and a cleaning gas in a plasma state is supplied to the reaction vessel 203.

At this time, the APC valve 243 is appropriately adjusted so that the pressure in the reaction vessel 203 is, for example, a pressure in the range of 10 Pa to 1000 Pa. At this time, the temperature of the heater 218 is set to such a temperature that the temperature of the substrate 200 becomes a temperature within a range of 200 ° C. to 400 ° C., for example.

At the boundary between the processing chamber wall of the first processing region 201a, the first processing region 201a and the first purge region 201a, and the first processing region 201a and the second purge gas region 201b, the adhering matter or gas More by-products generated by the reaction are attached than in other regions.

  In the second processing region 201b, a by-product generated when the first gas adsorbed or deposited on the substrate 200 and the susceptor reacts with the second gas may adhere to the walls and partitions of the process chamber. Conceivable. However, since there is less silicon-containing gas than the first processing region 201a and the first purge region 201b, it is conceivable that there are fewer cleaning objects than the first processing region 201a and the first purge region 204a.

In the purge region 204 (first purge region 204a, second purge region 204b), there is a possibility that the first gas flows from the first processing region 201a disposed therebetween. Therefore, it is conceivable that the number of objects to be cleaned is smaller than that of the first processing region 201a, the first purge region 204a, and the second processing region 201b.

The amount of cleaning object in each region is compared as follows.
First processing area 201a> purge area 204> second processing area 201b.

  In order to perform the cleaning process at a low temperature, a cleaning gas in a plasma state is used. The amount of the cleaning gas and the energy of the cleaning gas are supplied in accordance with the region where the amount of the cleaning object is the largest. That is, the energy of the cleaning gas is adjusted according to the first region. Therefore, in a region where there are few objects to be cleaned, it may be considered that the processing chamber wall or the like is etched by the cleaning gas in the plasma state.

  Therefore, in the present invention, pre-coating is performed on the entire surface of the susceptor 217. Furthermore, by uniformly forming the film thickness of the precoat film on the susceptor 217, the life of the precoat film is extended, the uniformity of the wafer film formation is improved, the quality of the wafer film formation is improved, the generated foreign matter is reduced, and the wafer slip is suppressed. I do.

(Substrate unloading step (S308))
After performing the cleaning process for a predetermined time, the dummy substrate 280 is unloaded by a method reverse to the dummy substrate 280 loading step.

(Confirmation of the number of cleaning steps (S114))
When the cleaning process is completed, it is determined whether the cleaning process has been performed a predetermined number of times. If cleaning has been performed a predetermined number of times, it is determined that the chamber and the susceptor surface have been etched by the cleaning gas, and a precoat process is performed. If the predetermined number of times is not reached, the processing of this lot is terminated and the next lot is processed.

(Pre-coating process (S116))
Pre-coating is performed without the substrate in the processing chamber. Specifically, the following processing is performed.

  Then, the precoat process process concerning this embodiment is demonstrated. In the description of the precoat processing step, the operation of each part of the process chamber 202 of the substrate processing apparatus 10 is controlled by the control unit 300.

A film formed on the susceptor by a film forming process using trisilylamine (TSA), which is a silicon-containing gas, as the first gas in the precoat treatment process, and oxygen gas, which is an oxygen-containing gas, as the second process gas An example of forming a film similar to the above, here an SiO film, will be described.

(Temperature rise and pressure adjustment process)
Electric power is supplied to the heater 218 embedded in the susceptor 217, and the surface of the susceptor 217 is heated to a predetermined temperature (eg, 200 ° C. or more and 400 ° C. or less). At this time, the temperature of the heater 218 is adjusted by controlling the power supply to the heater 218 based on the temperature information detected by the temperature sensor 274.

  Further, the inside of the reaction vessel 203 is evacuated by a vacuum pump 246 so that the inside of the reaction vessel 203 has a desired pressure (for example, 0.1 Pa to 300 Pa, preferably 20 Pa to 40 Pa). At this time, the pressure in the reaction vessel 203 is measured by a pressure sensor (not shown), and the opening degree of the APC valve 243 is feedback controlled based on the measured pressure information.

  Further, while rotating the susceptor 217, the rotation mechanism 267 is operated to start the rotation of the susceptor 217. At this time, the rotation speed of the susceptor 217 is controlled by the controller 300. The rotation speed of the susceptor 217 is, for example, 1 rotation / second. By rotating the susceptor 217, the surface of the susceptor 217 starts moving in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. The substrate 200 passes through.

(First precoat treatment process)
Next, TSA gas as the first processing gas is supplied into the first processing region 201a, oxygen gas as the second processing gas is supplied into the second processing region 201b, and silicon on the susceptor 217 is supplied. The first precoat treatment step will be described by taking as an example the step of forming an oxide film (SiO film). In the following description, TSA gas supply, oxygen gas supply, and inert gas are supplied to each region in parallel.

  When the susceptor 217 is heated to reach a desired temperature and the susceptor 217 reaches a desired rotational speed, at least the valves 232d, 233d, and 234d are opened, and the process gas 201 and the inert gas process region 201 and the purge region 204 are opened. Start supplying. At this time, the temperature of the heater 218 is set to such a temperature that the temperature of the susceptor 217 becomes a temperature within a range of 200 ° C. to 400 ° C., for example.

Next, specific gas supply control will be described.
First, the valve 232d is opened to start the supply of TSA gas into the first processing area 201a, the valve 233d is opened to supply oxygen gas into the second processing area 201b, and the valve 234d is further opened to open the first processing area 201a. N ₂ gas, which is an inert gas, is supplied into the purge region 204a and the second purge region 204b. At this time, the APC valve 243 is appropriately adjusted so that the pressure in the reaction vessel 203 is, for example, 370 Pa.

The mass flow controller 232c is adjusted so that the flow rate of the TSA gas supplied to the first processing region 201a becomes a predetermined flow rate. Note that the supply flow rate of the TSA gas controlled by the mass flow controller 232c is, for example, a flow rate in the range of 100 sccm to 5000 sccm. Here, as will be described later, the flow rate is set higher than the first gas flow rate in the second precoat treatment step.

Further, when supplying the TSA gas into the first processing region 201a, the valve 235d is opened, and N ₂ gas as a carrier gas or a dilution gas is supplied from the second inert gas supply pipe 235a to the first processing region 201a. It is preferable to supply into 201a. Thereby, supply of TSA gas into the 1st processing field 201a can be promoted. Here, as will be described later, the flow rate is set higher than the first gas flow rate in the second precoat treatment step.

The mass flow controller 233c is adjusted so that the flow rate of the oxygen gas supplied to the second processing region 201b becomes a predetermined flow rate. Note that the oxygen gas supply flow rate controlled by the mass flow controller 233c is, for example, a flow rate in the range of 1000 sccm to 10,000 sccm.

When oxygen gas is supplied into the second processing region 201b, the valve 236d is opened, and N ₂ gas as a carrier gas or dilution gas is supplied from the third inert gas supply pipe 236a to the second processing region 201b. It is preferable to supply in 201b. Thereby, supply of oxygen gas into the second processing region 201b can be promoted.

The mass flow controller 234c is adjusted so that the flow rate of the N ₂ gas supplied to the first purge region 204a and the second purge region 204b becomes a predetermined flow rate. Note that, through the gap between the end portion of the partition plate 205 and the side wall of the reaction vessel 203, the first processing region 201a and the second processing region 201b from the first purge region 204a and the second purge region 204b. By injecting the inert gas toward the inside, it is possible to suppress intrusion of the processing gas into the first purge region 204a and the second purge region 204b.

  With the start of gas supply, high-frequency power is supplied from a high-frequency power source (not shown) to the plasma generation unit 206 provided above the second processing region 201b. The oxygen gas supplied into the second processing region 201b and having passed under the plasma generation unit 206 becomes a plasma state in the second processing region 201b, and the active species contained therein are supplied to the susceptor 217.

  As described above, by rotating the susceptor 217, the susceptor 217 repeatedly moves in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b.

In the first precoat treatment step, for example, the flow rate of the first gas is 33 sccm, and the flow rate of the N 2 gas added to the first gas is 1500 sccm.
The flow rate of the first gas is set to be higher than the first gas flow rate in the second precoat treatment step described later.

By performing the processing in this manner, a first precoat film is formed on the susceptor 217 including the substrate platform 217b. When the film on the susceptor has a desired film thickness, the first precoat treatment process is terminated and a second precoat treatment process is performed.

By the way, the first gas ejection port 254 and the second gas ejection port 255 are provided from the center of the susceptor toward the outer periphery of the susceptor, and further, the gas is uniformly supplied onto the substrate platform 217b. As a result, a phenomenon occurs in which the thickness of the film formed on the outer periphery of the susceptor 217 and the thickness of the film at the center of the susceptor 217 are different. Specifically, the thickness of the outer periphery of the susceptor 217 is thicker than the thickness of the center of the susceptor 217. In order to eliminate the non-uniformity of the film thickness, the next second precoat treatment step is performed.

(Second precoat treatment process)
Next, the second precoat treatment process will be described.
The second precoat treatment step is a step of precoating the susceptor 217 without a substrate, as in the first precoat treatment step. As in the first precoat treatment step, the gas used is trisilylamine (TSA), which is a silicon-containing gas, as the first gas, and oxygen gas, which is an oxygen-containing gas, as the second treatment gas. By using these gases, a second precoat film (here, SiO film) is formed on the first precoat film formed in the first precoat treatment step.

A specific operation will be described below.
After completion of the first precoat treatment step, at least valves 232d, 233d, and 234d are continuously opened to supply the treatment gas 201 and the inert gas to the treatment region 201 and the purge region 204. At this time, the APC valve 243 is appropriately adjusted so that the pressure in the reaction vessel 203 is, for example, 370 Pa.

Next, more specific gas supply control will be described.
Subsequent to the first precoat treatment step, the valve 232d is opened to start the supply of TSA gas into the first treatment region 201a, the valve 233d is opened to supply oxygen gas into the second treatment region 201b, and the valve 234d is opened, and N ₂ gas which is an inert gas is supplied into the first purge region 204a and the second purge region 204b. At this time, the APC valve 243 is appropriately adjusted so that the pressure in the reaction vessel 203 is, for example, 370 Pa.

The mass flow controller 232c is adjusted so that the flow rate of the TSA gas supplied to the first processing region 201a becomes a predetermined flow rate. Note that the supply flow rate of the TSA gas controlled by the mass flow controller 232c is, for example, a flow rate in the range of 100 sccm to 5000 sccm. Here, it controls so that it may become lower than the 1st gas flow rate of a 1st precoat process.

Further, when supplying the TSA gas into the first processing region 201a, the valve 235d is opened, and N ₂ gas as a carrier gas or a dilution gas is supplied from the second inert gas supply pipe 235a to the first processing region 201a. It is preferable to supply into 201a. Thereby, supply of TSA gas into the 1st processing field 201a can be promoted. Here, it controls so that it may become lower than the 1st gas flow rate of a 1st precoat process.

The mass flow controller 233c is adjusted so that the flow rate of the oxygen gas supplied to the second processing region 201b becomes a predetermined flow rate. Note that the oxygen gas supply flow rate controlled by the mass flow controller 233c is, for example, a flow rate in the range of 1000 sccm to 10,000 sccm.

When oxygen gas is supplied into the second processing region 201b, the valve 236d is opened, and N ₂ gas as a carrier gas or dilution gas is supplied from the third inert gas supply pipe 236a to the second processing region 201b. It is preferable to supply in 201b. Thereby, supply of oxygen gas into the second processing region 201b can be promoted.

The mass flow controller 234c is adjusted so that the flow rate of the N ₂ gas supplied to the first purge region 204a and the second purge region 204b becomes a predetermined flow rate. Note that, through the gap between the end portion of the partition plate 205 and the side wall of the reaction vessel 203, the first processing region 201a and the second processing region 201b from the first purge region 204a and the second purge region 204b. By injecting the inert gas toward the inside, it is possible to suppress intrusion of the processing gas into the first purge region 204a and the second purge region 204b.

In parallel with the gas supply, heating and rotation of the susceptor 217 are continued. By rotating the susceptor 217, the surface of the susceptor 217 starts moving in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. The substrate 200 passes through.

  With the start of gas supply, high-frequency power is supplied from a high-frequency power source (not shown) to the plasma generation unit 206 provided above the second processing region 201b. The oxygen gas supplied into the second processing region 201b and having passed under the plasma generation unit 206 becomes a plasma state in the second processing region 201b, and the active species contained therein are supplied to the susceptor 217.

In the second precoat treatment step, for example, the flow rate of the first gas is 11 sccm, and the flow rate of the N 2 gas added to the first gas is 500 sccm.
Thus, the flow rate of the first gas is set to be smaller than the first gas flow rate of the first precoat treatment step.

By processing in this way, a thick precoat film is also formed at the central portion of the susceptor 217 where a thick precoat film was not formed in the first precoat processing step. As a result, a uniform precoat film is formed over the entire surface of the susceptor 217.

The reason will be described below.
In the second precoat treatment step, the flow rate of the first gas and the flow rate of N2 gas, which is the carrier gas, are reduced compared to the first precoat treatment step.
In this way, the time for the TSA gas to stay around the first gas ejection hole 254 becomes longer. Therefore, the TSA gas is supplied directly under the first gas ejection hole 254 or in the central part of the susceptor by the diffusion action of the TSA gas, and a silicon-containing layer is formed. The silicon-containing gas formed immediately below the first gas ejection hole 254 or in the central portion of the susceptor reacts with oxygen gas, and a film having a thickness corresponding to the outer periphery of the susceptor is formed.

When it is determined that a precoat film having a desired thickness is formed uniformly, the second precoat process is terminated. Specifically, the supply of each gas, the power supply to the plasma electrode, and the rotation of the susceptor are stopped.
When the pre-coating process is completed, the substrate processing for the next lot is performed.

As described above, a uniform precoat film is formed on the susceptor by the first precoat step and the second precoat step. The uniform precoat film uniformly disperses the stress caused by the centrifugal force generated when the susceptor 217 rotates, so that the precoat film can be prevented from peeling off.

In this embodiment, the pre-coating process is performed without placing the dummy wafer 280 on the substrate platform 217b. For example, the material of the susceptor is lower than the friction coefficient of the film to be deposited, such as graphite. This is particularly advantageous. This is because, by forming a precoat film on the substrate mounting portion 217b made of a material having a low friction coefficient, it is possible to suppress the slippage of the substrate during the film forming process. Thereby, it is possible to suppress the generation of particles due to the slip of the substrate.

  On the other hand, if the thickness of the precoat film on the susceptor is uniform and the stress is uniform, the precoat process may be performed while placing the dummy wafer 280 on the substrate platform 217b. In this case, since a film is not deposited on the substrate platform 217b, the following advantages are obtained. In other words, even when the processing substrate 200 placed on the substrate placing portion 217b during the film forming process slips due to the centrifugal force generated when the susceptor 217 rotates, generation of particles due to film peeling can be suppressed in advance. It is.

In the above description, the second precoat is performed after the first precoat. However, the present invention is not limited to this. If the precoat film is uniformly formed on the susceptor 217, the first precoat process is performed after the second precoat process. May be implemented.

(Second Embodiment)
(Device configuration)
The second embodiment is different from the apparatus of the first embodiment in the gas supply unit, but the other configurations with the same numbers are the same.
A different configuration will be described below.
301 is a first gas supply nozzle. The nozzle is connected to the first process gas introduction part 251 and extends in the radial direction of the susceptor 217.
302 is a second gas supply nozzle. The nozzle is extended toward the radial direction of the susceptor 217, connected to the second processing gas introduction part 252.
303 is a first purge gas supply nozzle, and 304 is a second purge gas supply nozzle. Each is connected to the purge gas supply unit 253, and the nozzles are extended in the radial direction of the susceptor 217.

  Each nozzle is configured to be larger than the diameter of the substrate placed on the placement portion 217b. With such a configuration, a gas can be uniformly supplied onto the substrate 200.

(Substrate processing process)
The substrate processing step is substantially the same as that of the first embodiment, but in the film forming step and the cleaning step, the second gas supply hole 255 is changed from the gas supply nozzle 301 instead of the first gas supply hole 254 for supplying the purge gas to be supplied. Instead, the processing gas and the purge gas are supplied from the gas supply nozzle 302.
Further, purge gas is supplied from the purge gas supply nozzle 303 and the purge gas supply nozzle 304 instead of the purge gas supply holes 256 and 257.

(6) Effect According to the above-described embodiment, the following one or more effects are achieved.

(A) A film forming process with good reproducibility can be performed by performing a cleaning process and then pre-coating the processing chamber.

(B) Pre-coating without placing a dummy wafer improves the uniformity of the pre-coating film over the entire surface of the susceptor and makes it difficult for the pre-coating film to peel off.

(C) By performing the precoat treatment under different conditions, the uniformity of the precoat film over the entire surface of the susceptor is improved, and the precoat film is less likely to peel off.

<Other Embodiments of the Present Invention>
As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

  For example, in the above-described embodiment, the cleaning gas supply hole is provided at a position facing the central portion of the susceptor. However, the cleaning gas supply hole may be configured to be supplied individually to each region.

  Moreover, although the above-mentioned embodiment demonstrated using two processes, it is not restricted to it, For example, you may use three processes or more processes. In this case, the gas may be uniformly supplied to the surface of the substrate mounting portion by adjusting the supply amount (flow rate) of the first gas in each step. By doing in this way, it becomes possible to control the film thickness on a board | substrate mounting part more precisely.

In the above-described embodiment, a silicon-containing gas and an oxygen-containing gas are used as the processing gas and the SiO film is formed on the substrate 200. However, the present invention is not limited to this. That is, for example, a hafnium oxide film (HfO film) using a hafnium (Hf) -containing gas and an oxygen-containing gas, a zirconium (Zr) -containing gas and an oxygen-containing gas, a titanium (Ti) -containing gas, and an oxygen-containing gas as the processing gas. Alternatively, a high-k film such as zirconium oxide (ZrO film) or titanium oxide film (TiO film) may be formed on the substrate 200. In addition to the oxygen-containing gas, ammonia (NH ₃ ) gas, which is a nitrogen (N) -containing gas, or the like may be used as the processing gas to be converted into plasma.

In the above-described embodiment, nitrogen trifluoride is used as the cleaning gas. However, the present invention is not limited to this, and a cleaning gas having the following combination with the processing gas may be used.
When TSA is used as the first gas and oxygen gas is used as the second gas, hydrogen fluoride (HF), fluorine (F2), or chlorine trifluoride (ClF3) may be used as the cleaning gas.
Further, when hexamethyldisilane (HMDS) is used as the first gas and oxygen gas is used as the second gas, NF3, HF, F2, or ClF3 may be used as the cleaning gas.
Further, when trisilylamine (TSA) is used as the first gas and ammonia (NH3) is used as the second gas, NF3, HF, F2, or ClF3 may be used as the cleaning gas.
Further, when tetrakisethylmethylaminozirconium (TEMAZ) is used as the first gas and oxygen gas is used as the second gas, boron trichloride (BCl3) may be used as the cleaning gas.

  In the above-described embodiment, oxygen gas is supplied to the processing chamber, and plasma is generated by the plasma generation unit 206. However, the present invention is not limited thereto, and a remote plasma method for generating plasma outside the processing chamber, Ozone with a high energy level may be used.

  In the above-described embodiment, the inert gas introduction unit 253 of the gas supply unit 250 is common to the first purge region 204a and the second purge region 204b. However, the inert gas introduction unit is provided separately. May be.

  In the above-described embodiment, the substrate push-up pins 266 are moved up and down to move the substrate 200 to the processing position and the transfer position. However, the substrate 200 is processed by moving the susceptor 217 up and down using the lifting mechanism 268. You may move to a position or a conveyance position.

  In the above-described embodiment, the cleaning gas supply amount in each region is controlled by controlling the flow rate of the purge gas. However, the present invention is not limited to this, and the cleaning gas supply port and its flow rate control unit are associated with each region. The cleaning gas flow rate may be controlled for each region by the cleaning gas flow rate control unit for each region.

Hereinafter, the present invention will be described as an appendix.
<Appendix 1>
A plurality of processing substrates are placed side by side on the same surface and on the same circumference on a substrate placement portion of a substrate placement table provided in the treatment chamber, and the substrate placement table is rotated and placed in the treatment chamber. A film forming step for supplying a processing gas to form a desired film on the processing substrate, and a cleaning for supplying a cleaning gas to the processing chamber in a state where the processing substrate is not mounted on a preprocessing substrate mounting table. And a pre-coating step of supplying the processing gas to the processing chamber in a state where the processing substrate is not mounted on the substrate mounting table after the cleaning gas is discharged from the processing chamber. Production method.

<Appendix 2>
Furthermore, in the pre-coating step, the semiconductor device manufacturing method according to appendix 1, wherein the gas is supplied to the processing chamber in a state where a dummy wafer is mounted on the substrate mounting portion.

<Appendix 3>
In the film formation step, the plurality of processing substrates are processed using a first gas and a second gas,
The pre-coating step includes a first pre-coating step and a second pre-coating step for treating the surface of the substrate mounting table using a first gas and a second gas, respectively.
The semiconductor device manufacturing method according to claim 1 or 2, wherein the first gas flow rate in the first precoat step is supplied more than the gas flow rate in the second precoat step.

<Appendix 4>
Furthermore, when the friction coefficient of the material of the substrate mounting portion is lower than the friction coefficient of the film formed in the film forming step, the pre-coating step forms a film on the substrate mounting portion. A method for manufacturing a semiconductor device.

<Appendix 4>
Furthermore, in the pre-coating step, the semiconductor device manufacturing method according to any one of appendices 2 to 4, wherein the processing gas is supplied toward a central portion of the substrate mounting table.

<Appendix 5>
Furthermore, a substrate mounting table provided in the processing chamber and having a substrate mounting portion for mounting a plurality of processing substrates arranged on the same surface and on the same circumference, and a rotation mechanism for rotating the substrate mounting table. A processing gas supply unit configured to supply a processing gas into the processing chamber; a cleaning gas supply unit configured to supply a cleaning gas into the processing chamber; and a processing substrate mounted on a substrate mounting unit of a substrate mounting table provided in the processing chamber. The processing gas is supplied from the processing gas supply unit to the processing chamber in a state where the substrate mounting table is rotated, a desired film is formed on the processing substrate, and the processing substrate is placed on the preprocessing substrate mounting table. In a state where the processing substrate is not mounted, the cleaning gas is supplied from the cleaning gas supply unit to the processing chamber, and after the cleaning gas is discharged from the processing chamber, the processing substrate is mounted on the substrate mounting table. In There state, the substrate processing apparatus and a control section for controlling to supply the processing gas into the processing chamber from the processing gas supply unit.

200 Substrate 203 Reaction Vessel 217 Substrate Placement Table 217b Substrate Placement Unit 218 Heater 254 First Gas Jetting Port 255 Second Gas Jetting Port 300 Control Unit

Claims (4)

A plurality of processing substrates are placed side by side on the same surface and on the same circumference on a substrate placement portion of a substrate placement table provided in the treatment chamber, and the substrate placement table is rotated and placed in the treatment chamber. A film forming step of supplying a processing gas and forming a desired film on the processing substrate;
A cleaning step of supplying a cleaning gas to the processing chamber in a state where the processing substrate is not mounted on a pretreatment substrate mounting table;
And a pre-coating step of supplying the processing gas to the processing chamber in a state where the processing substrate is not mounted on the substrate mounting table after the cleaning gas is discharged from the processing chamber. The method for manufacturing a semiconductor device according to claim 1, wherein in the pre-coating step, the gas is supplied to the processing chamber in a state where a dummy wafer is mounted on the substrate mounting portion. In the film formation step, the plurality of processing substrates are processed using a first gas and a second gas,
The pre-coating step includes a first pre-coating step and a second pre-coating step for treating the surface of the substrate mounting table using a first gas and a second gas, respectively.
3. The method of manufacturing a semiconductor device according to claim 1, wherein the first gas flow rate in the first precoat step is supplied more than the gas flow rate in the second precoat step. A substrate mounting table provided in the processing chamber and having a substrate mounting portion for mounting a plurality of processing substrates on the same surface and on the same circumference;
A rotation mechanism for rotating the substrate mounting table;
A processing gas supply unit for supplying a processing gas into the processing chamber;
A cleaning gas supply unit for supplying a cleaning gas into the processing chamber;
A processing substrate is mounted on a substrate mounting portion of a substrate mounting table provided in a processing chamber, and a processing gas is supplied from the processing gas supply unit to the processing chamber in a state where the substrate mounting table rotates, and the processing substrate Form the desired film on top,
In a state where the processing substrate is not mounted on the pretreatment substrate mounting table, the cleaning gas is supplied from the cleaning gas supply unit to the processing chamber,
A control unit that controls to supply the processing gas from the processing gas supply unit to the processing chamber in a state where the processing substrate is not mounted on the substrate mounting table after the cleaning gas is discharged from the processing chamber. A substrate processing apparatus.

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