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CN110140193A - The method drifted about for realizing high-temperature process without chamber - Google Patents

The method drifted about for realizing high-temperature process without chamber Download PDF

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Publication number
CN110140193A
CN110140193A CN201780082344.3A CN201780082344A CN110140193A CN 110140193 A CN110140193 A CN 110140193A CN 201780082344 A CN201780082344 A CN 201780082344A CN 110140193 A CN110140193 A CN 110140193A
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CN
China
Prior art keywords
substrate
power
chamber
frequency
processing chamber
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Granted
Application number
CN201780082344.3A
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Chinese (zh)
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CN110140193B (en
Inventor
M·W·蒋
P·P·杰哈
D·帕德希
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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    • H01J37/32862—In situ cleaning of vessels and/or internal parts
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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Abstract

The implementation of present disclosure provides the method for handling substrate in the processing chamber.In one implementation, which comprises (a) uses the first frequency RF power dielectric layer on the first substrate under first chamber pressure；(b) dielectric layer is sequentially deposited on N number of substrate after the first substrate under second chamber pressure, wherein N is 5 to 10 integer, and wherein depositing each substrate in N number of substrate includes using the second frequency RF power, and second frequency RF power has about 0.21W/cm lower than the power density of first frequency RF power2To about 0.35W/cm2Power density；(c) chamber cleaning procedure is executed in the case where substrate is not present；And (d) repeat (a) to (c).

Description

The method drifted about for realizing high-temperature process without chamber
Technical field
The implementation of present disclosure is related generally to for treatment process chamber to improve the improved of deposition uniformity Method.
Background technique
Plasma reactor in semi-conductor industry is usually made of aluminium-containing material.Especially polysilicon, metal or In oxide deposition chambers, as use such as NF3Or CF4Etc fluoro-gas as chemical substance when, can be on aluminum surfaces Form fluorination aluminium layer.It has been observed that aluminum fluoride is formed higher than 480 degrees Celsius with significant steam pressure and in this temperature Under start to distil.Then aluminum fluoride is transported to chamber part, the panel of such as processing chamber.Aluminum fluoride condenses simultaneously on panel Forming layer, the layer may peel off during subsequent technique in the chamber and with particle contamination substrate surfaces.Aluminum fluoride is difficult to It removes, and after panel is contaminated, does not there is known method to provide the In-Situ Cleaning of panel and/or vacuum chamber.Cause This, drifts about in the indoor deposition rate of vacuum chamber and chamber becomes unstable.
Therefore, there is a need in the art for a kind of improved methods for cleaning procedure chamber, so that minimizing Or a possibility that avoiding deposition rate drift and being fluorinated aluminum pollution substrate surface during processing.
Summary of the invention
The implementation of present disclosure provides the method for handling substrate in the process chamber.In an implementation In, which comprises (a) uses the first frequency RF power dielectric layer on the first substrate under first chamber pressure； (b) it is sequentially deposited dielectric layer on N number of substrate after the first substrate under second chamber pressure, wherein N is 5 to 10 Integer, and wherein depositing each substrate in N number of substrate includes the second high-frequency RF function using the second frequency RF power Rate has about 0.21W/cm lower than the power density of first frequency RF power2To about 0.35W/cm2Power density；(c) exist Chamber cleaning procedure is executed in the case where there is no substrate；And (d) repeat (a) to (c).
In another implementation, which comprises (a) uses the first frequency RF power and the first low frequency RF power First substrate is handled under first chamber pressure with dielectric layer on the first substrate；(b) under second chamber pressure It is sequentially processed in N number of substrate after the first substrate with the dielectric layer on N number of substrate, wherein N is 5 to 10 Integer, and wherein handle each substrate in N number of substrate include using the second frequency RF power and the second low frequency RF power, Wherein second frequency RF power has than for described in the deposition on previous (immediate prior) substrate immediately The low about 0.21W/cm of power density of first frequency RF power of dielectric layer2To about 0.35W/cm2Power density；(c) exist Chamber cleaning procedure is executed in the case where there is no substrate；And (d) repeat (a) to (c).
In another implementation, the method includes handling N substrate, wherein N is greater than 1 integer, the place Managing N substrate includes: using the first frequency RF power and the first low frequency RF power under first chamber pressure in the N base The first part of dielectric layer on plate；Existed under second chamber pressure using the second frequency RF power and the second low frequency RF power The second part of the dielectric layer is deposited on the N substrate, wherein second frequency RF power is with higher than described first The low about 0.21W/cm of the power density of frequency RF power2To about 0.35W/cm2Power density, and the second chamber pressure is low In the first chamber pressure；And the N substrate is removed from the processing chamber housing.After handling the N substrate, place Manage (N+1) substrate, comprising: second frequency RF power and second low frequency RF are used under the second chamber pressure Power is with the dielectric layer on (N+1) substrate, wherein second frequency RF power has than in the N The low about 0.21W/cm of power density of first frequency RF power of the first part of the dielectric layer is deposited on substrate2 To about 0.35W/cm2Power density；And (N+1) substrate is removed from the processing chamber housing, by by processing chamber housing Temperature maintain about 550 DEG C at a first temperature of, then will be described before clean gas is introduced into the processing chamber housing The cooling length of processing chamber housing executed chamber cleaning procedure of about 60 seconds.
Brief description
Present disclosure or more can be understood with reference to the illustrative implementation for the present disclosure described in attached drawing The implementation for being briefly outlined and being described more particularly below.It should be noted, however, that attached drawing illustrates only present disclosure Typical realisation, and be therefore not construed as to scope of the present disclosure limitation because present disclosure can be with Allow other equivalent implementations.
Fig. 1 depicts the illustrative methods for the dielectric layer on substrate of the implementation according to present disclosure Flow chart.
In order to make it easy to understand, the similar elements for having specified each figure shared using identical appended drawing reference as much as possible.It is attached Figure is not drawn on scale, and for the sake of clarity, attached drawing can be simplified.It is contemplated that implementation is wanted Element and/or feature can be beneficially incorporated other implementations, without being further discussed below.
Specific embodiment
Fig. 1 depicts the flow chart of the method 100 for handling substrate of the implementation according to present disclosure.Method 100 are started at frame 102 by handling first substrate in the processing chamber.Processing chamber housing can be using heat and/or plasma Body is to enhance any suitable substrate processing chamber of processing performance, such as chemical vapor deposition (CVD) chamber or plasma Enhance chemical vapor deposition (PECVD) chamber.Processing chamber housing can be single processing chamber housing or tool, and there are two pairs of reaction compartment Chamber reactor, described two reaction compartments share identical space or are equipped with different gas accesses and different RF systems. In an example implementations, processing chamber housing is dual cavity reactor, wherein the processing chamber housing of each RF power supply at least has There are panel, substrate support and vacuum pump system.Panel is the surface of chamber cover, is exposed to processing environment and towards substrate branch Support member.Can be beneficial to the embodiment of present disclosure a suitable processing chamber be can be from California sage's carat It draws commercially available from Applied Materials (Applied Materials, Inc., Santa Clara.California) Chamber.
The processing of first substrate generally comprises one or more of following procedure.Firstly, stablizing processing chamber housing to establish Process conditions suitable for the dielectric layer on substrate.Stabilization may include that adjustment operation processing chamber is required to execute deposition institute Technological parameter.Technological parameter can include but is not limited to setting process conditions, such as chamber pressure, electrode spacing, panel temperature Degree, substrate support temperature etc..For example, can stable processing chamber housing in the following manner: pump be inhaled processing chamber housing and is simultaneously maintained To predetermined pressure, the electrode spacing between panel and substrate is adjusted to first electrode spacing, and by the temperature of substrate support Degree maintains about 400 DEG C to about 650 DEG C, for example, about 550 DEG C.Panel temperature can maintain between about 100 DEG C to about 300 DEG C.
Then, precursor gas mixture is provided to processing chamber housing by controlled temperature panel.Admixture of gas can be with It is any suitable precursor mix for depositing silicon (polysilicon or amorphous silicon), silica, silicon nitride or silicon oxynitride. If desired, may include dopant precursor, such as boron compound, phosphorus compound and/or arsenic compound.Following flow rate range It is suitable for the chamber of 300mm substrate suitable for size.Scaling appropriate can be used for the chamber that size is suitable for other substrates.It can be with About 20mgm between about 5000mgm flow rate provide tetraethyl orthosilicate (TEOS).It can be with about 1000sccm to about Flow rate between 20000sccm provides oxygen predecessor, such as N2O、O2、O3、H2O, CO or CO2.It can be optionally with about 20sccm Silicon predecessor (such as silane) is provided to the flow rate between about 2000sccm.It can be with about 200sccm between about 50000sccm Flow rate provide nitrogen predecessor, such as N2、N2O、NH3Or H2N2Or any mixing of its variant or aforementioned nitrogen material that replace Object.It may include carbon matrix precursor (such as hydrocarbon, such as methane) to add carbon to this layer.It is optionally possible to about 20sccm to about Flow rate between 3000sccm provides dopant precursor, such as trimethyl borine (TMB), diborane (B2H6), phosphine (PH3), arsine (AsH3) and the phosphine and arsine or their mixture that replace.These predecessors can be carried by carrier gas, or be diluted in about (such as helium, argon, nitrogen or hydrogen or any of theirs mix the diluent gas that 500sccm is flowed to the rate between about 30000sccm Close object) in.
In the example implementations that dielectric layer is silica, precursor gas mixture includes TEOS, N2O And argon.When precursor gas to be supplied in processing chamber housing, processing chamber housing maintains the initial behaviour between about 5 supports and about 10 supports Make under pressure, for example, about 8 supports.Electrode spacing between panel and substrate is established between about 200 mils and 2000 mils.Substrate The temperature of supporting element maintains about 400 DEG C to about 650 DEG C, for example, about 550 DEG C.
Hereafter, plasma is formed to execute depositing operation from predecessor admixture of gas in the processing chamber.Plasma Body can be formed by inductively or capacitively device, and can be swashed by the way that RF power to be coupled in precursor gas mixture It encourages.RF power can be single-frequency RF power or the dual frequencies RF power with high fdrequency component and low frequency component.RF power typically with Power level between about 50W and about 1500W applies, these power can all be frequency RF power (such as in about 13.56MHz Frequency under) or can be the mixing of the high frequency power of about 13.56MHz and the low frequency power of about 350kHz.It is exemplary at one In implementation, RF power be with the power level of about 130W to about 200W (for example, about 170W) apply high frequency power and with The mixing for the low frequency power that the power level of about 80W to about 120W (for example, about 100W) applies.Processing chamber housing maintains about 5 supports Under initial operation pressure between about 10 supports, for example, about 8 supports.The temperature of substrate support maintains about 400 DEG C to about 650 DEG C, for example, about 550 DEG C.In some cases, condition can be with predetermined hold-time (for example, about 90 seconds to about 125 seconds, such as 110 Second) with deposition, with predetermined thickness, (predetermined thickness is about 1500 angstroms to about 10000 angstroms, for example, about 2500 angstroms to about 5000 Angstrom) dielectric layer first part.Although the technological parameter being discussed herein is the first part of dielectric layer, these works Skill parameter can be used for depositing entire dielectric layer.
After the first part of dielectric layer, continue to deposit work to use the first RF compensation formula by switching Skill, the first RF compensation formula are configured in the second part of dielectric layer on first substrate.First RF compensation Formula uses first operating pressure lower than initial operation pressure, and about 180W's to about 220W (for example, about 203W) The frequency RF power that the frequency applied under power level is 13.56MHz and the function in about 180W to about 220W (for example, about 200W) The frequency applied under rate level is the mixing of the low frequency RF power of 300kHz.First operating pressure can be lower than initial operation pressure At least about 3 supports.In one implementation, the first operating pressure is about 3 supports to about 8 supports, for example, about 4.8 supports.Substrate support Temperature maintain about 400 DEG C to about 650 DEG C, for example, about 550 DEG C.Precursor gas mixture continues flowing to maintain processing chamber Plasma in room.If desired, before any in precursor gas mixture being introduced into make a reservation for oblique variable Rate Object is driven, with the transition between the first part of smooth dielectric layer and the deposition of second part.Condition predetermined hold-time (for example, About 35 seconds to about 90 seconds, such as 60 seconds), until the second part of dielectric layer reaches predetermined thickness, (it is about 1000 angstroms to about 8000 angstroms, for example, about 1200 angstroms to about 3000 angstroms).Although the first RF compensation formula being discussed herein is the second of dielectric layer Part, but these technological parameters can be used for depositing entire dielectric layer.
It, can be by closing TEOS after the second part of dielectric layer has been deposited on first substrate at frame 104 It is in situ to execute optional corona treatment, while continuing to make precursor gas mixture (for example, N2O and argon) rest part Flowing and RF power.Frequency RF power during corona treatment can be controlled in the power of about 180W to about 220W Level, for example, about 203W, and low frequency RF power can be controlled in the power level of about 180W to about 220W, for example, about 200W.Corona treatment can execute about 5 seconds to about 15 seconds, for example, about 10 seconds.
At frame 106, first substrate is removed from processing chamber housing, and use purification gas purified treatment chamber.Purification gas It may include such as nitrogen, argon, N2O or suitable for other inert gases of purification and the combination of these gases.During purification Process conditions can be same or like with previous step, the difference is that not using RF power (that is, without plasma).? In one embodiment, purification executes under the chamber pressure of about 20 supports.Clarification time is about 2 seconds to about 200 seconds, for example, about 5 Second was to about 90 seconds.In some cases, purification executes about 5 seconds under 4.8 supports.In some cases, purification is in throttle valve 1 It is executed in the case where being fully opened under support about 20 seconds.In some cases, purification executes about 45 seconds under 3 supports.In some cases Under, purification executes under 5 supports about 60 seconds or the longer time, and for example, about 90 seconds.It if desired, can be in higher chamber pressure Purification is executed under (for example, about 10 supports to about 30 supports), to help from the exposure of the panel and other chamber parts of processing chamber Inner surface removes aluminum fluoride and other undesired residues.In this case, purification can execute about 140 seconds under 25 supports.
Purification gas can be flowed with higher flow, to prevent aluminum fluoride evaporation from reaching the panel of processing chamber housing.For example, net Changing gas can be with the flow rate of about 4000sccm to about 30000sccm (such as about 8000sccm to about 24000sccm, such as right About 10000 to about 20000sccm for 300mm plasma process chamber) it is introduced into plasma process chamber.? N2O and argon are used in an example of purification gas, N2O is flowed into processing chamber housing with the first volume flow rate, and argon can be with the Two volume flow rates flow into processing chamber housing, wherein the ratio of the first volume flow rate and the second volume flow rate can be 0.5: 1 and about Between 1.2: 1, such as about 0.6: 1 to about 1: 1, for example, about 0.8: 1.
Hereafter, any reaction residue and/or undesired gas pump out processing chamber housing by vacuum pump system.
At frame 108, handled using process sequence identical with technique described in frame 102 above in first substrate N number of substrate later is situated between the difference is that being deposited in each subsequent substrate in N number of substrate using the 2nd RF compensation formula Electric layer.In one implementation, N is the integer of range between 5 and 10, such as between 6 and 8, such as 7.In various realities It applies in mode, the 2nd RF compensation formula is substantially similar to the first RF compensation formula, the difference is that the 2nd RF compensation formula Frequency RF power have it is lower than the power density for the frequency RF power of dielectric layer on previous substrate immediately About 0.21W/cm2To about 0.35W/cm2Power density.However, the second low frequency RF power of the 2nd RF compensation formula can be with the First low frequency RF power of first low frequency RF power of one RF compensation formula identical or less than the first RF compensation formula.
For example, once removing first substrate from processing chamber housing, the second substrate is just set in the processing chamber, at it Upper dielectric layer.Technique identical with technique described in above-mentioned frame 102 is executed to the second substrate, the difference is that heavy Product technique uses the 2nd RF compensation formula dielectric layer in the second substrate.In this case, it is compensated using than the first RF The frequency RF power of the frequency RF power of formula small about 1.5W to about 3W carry out dielectric layer.
High-frequency RF function in an example implementations, for the second part of dielectric layer in the second substrate Rate is applied with the power level of about 201.5W.Once the second substrate completes deposition, the second substrate, and the are removed from processing chamber housing Three substrates, and third substrate is set in the processing chamber, with dielectric layer on it.Third substrate is executed and above-mentioned frame The identical technique of technique described in 102, the difference is that depositing operation is using the 2nd RF compensation formula on third substrate Dielectric layer.In this case, small about using the frequency RF power than the 2nd RF compensation formula for the second substrate The frequency RF power of 1.5W to about 3W carry out dielectric layer.In an example implementations, for sinking on third substrate The frequency RF power of product dielectric layer is applied with the power level of about 200.0W.This 2nd RF compensation formula can continue to apply to one The four, the five, the 6th ... substrates in substrate are criticized, until complete chamber clean technique (as discussed below) becomes necessary. Complete chamber clean techniques can be executed with every 5 substrates to 20 substrates (for example, about 7 substrates to about 12 substrates), this can be with Change depending on application.
At frame 110, once the substrate of processing predetermined quantity, is carried out complete chamber clean technique to remove and stays in chamber Any undesired (one or more) materials on the surface of wall or chamber part.Predetermined quantity can be between 5 and 15, example Such as 7 to 10.Alternatively, chamber clean technique completely can be executed with any predetermined space, this depends on chamber conditions and/or is locating The quantity of the substrate handled in reason chamber.Complete chamber cleaning can be executed before, during and/or after depositing operation Skill, and there is no carry out in the case where substrate in the processing chamber.
Complete chamber clean technique may include dry clean technique or remote plasma source clean technique in situ.In original In the dry clean technique of position, one or more gases are dissociated in processing chamber housing to form one or more reaction gas substances (for example, fluorine ion, free radical etc.).Reactive material can effectively remove aluminum fluoride residue present in processing chamber housing.? In remote plasma source clean, used such as in this implementation, (one or more) clean gas is in independent chamber (example Such as, RPS chamber) in dissociation to form one or more active materials, then one or more active materials downstream flow Enter in processing chamber housing to help chamber clean.
Clean gas includes fluorine (F2And/or F) and/or fluoro free radical (F*).As the source of these substances, clean gas can To include perfluorinated hydrogen or hydrofluorocarbon compound, such as NF3、CF4、C2F6、CHF3、C3F8、C4F8、SF6Or their combination.Appoint Selection of land, clean gas may further include inert gas (such as helium or argon) to help to cause plasma.Using NF3Before It, can be by by NF in the case where driving object gas3Predecessor is with about 200sccm to the flow rate between about 20000sccm and about 1 It is introduced into processing chamber housing under support to the chamber pressure of about 20 supports (for example, about 4 supports to about 10 supports) to execute cleaning procedure.It is applied to RPS chamber is to activate NF3The power of precursor gas is between about 1000W and about 10000W.It is close that electrode spacing is maintained at about 200 Ear is to about 900 mils.During complete chamber clean technique, the temperature of processing chamber housing maintains 400 DEG C to about 550 DEG C, such as About 470 DEG C to about 520 DEG C.The duration of cleaning procedure is about 60 seconds to about 240 seconds, such as 90 seconds to about 180 seconds.Above-mentioned model It encloses and is suitable for the chamber that size is suitable for 300mm substrate.Scaling appropriate can be used for the chamber that size is suitable for other substrates.
In some embodiments, complete chamber clean technique can be the cleaning of two stages formula.It in this case, will be all Such as NF3Other gases of the clean gas of predecessor etc and such as argon etc are introduced into processing chamber housing clear for the first time to carry out It is clean.Above-mentioned parameter can be used and execute cleaning for the first time, the difference is that electrode spacing is maintained at about 200 mils to about 800 First spacing of mil, for example, about 600 mils.Before executing second of cleaning, cleaning about 10 seconds for the first time can be executed.? Similar under clean parameter for the first time, second of cleaning can be carried out about 20 seconds, the difference is that electrode spacing is maintained at Greater than the second spacing of the first spacing, for example, about 900 mils to about 1200 mils.Second executed with broader electrode spacing Cleaning may be beneficial, because it reduces the accumulation of the AlF on panel.Then, clean gas can introduced processing chamber housing In before execute using argon (and optional nitrogen) chamber purify about 20 seconds.
In some embodiments, complete chamber clean technique is cooling cleaning, mode are as follows: by tieing up chamber temp It holds at about 550 DEG C, is then being introduced into clean gas in processing chamber housing with processing chamber housing is cooling about before starting above-mentioned cleaning 60 seconds.Therefore, while processing chamber housing is cooling, complete chamber clean technique is executed.Then processing chamber housing is cooled to about 520 DEG C or lower temperature, such as about 500 DEG C or lower, for example, about 480 DEG C.After complete chamber clean technique, chamber temp Start to be warming up to about 550 DEG C again to prepare subsequent technique.
Before purification execute chamber allocating technology (being discussed more fully below) in the case where, purification gas and/or Clarification time can change.For example, the purification gas used during the cleansing phase before chamber allocating technology may include Argon and nitrogen, and the purification gas used during the cleansing phase after chamber allocating technology can only include argon.This In the case of, the clarification time during the cleansing phase before chamber allocating technology is about 15 seconds to about 30 seconds, for example, about 20 seconds, And the clarification time during the cleansing phase after chamber allocating technology is about 3 seconds to about 10 seconds, for example, about 5 seconds.
At frame 112, chamber allocating technology is executed by the way that TEOS, oxygen and helium or argon to be introduced into processing chamber housing.By drawing The gas entered forms plasma to form oxygen on the inner surface of the exposure of chamber part (for example, panel and/or chamber wall) Compound (for example, silica) deploys layer.Deploy layer be used as coating, prevent aluminum fluoride from distilling and reach panel and/or its The inner surface of the exposure of its chamber part (such as, chamber wall).It is expected that instead of using silica, also can be used with Any precursor gas that deposition residues (such as fluorine) carry out chemical reaction and/or deposited by CVD or PECVD.It begs for herein Any embodiment of the complete chamber clean technique of opinion can according to need repeatedly, until reaching scheduled chamber conditions Until.
In one implementation, by drawing TEOS with the rate (for example, about 1200mgm) of 800mgm to about 2000mgm Enter in processing chamber housing and by it in conjunction with the helium or argon carrier gas that are introduced with about 50sccm to about 3600sccm, executes chamber and deploy work Skill.In some cases, TEOS is replaced using silane.By oxygen (such as N2O) with 8000sccm to about 20000sccm (for example, about 11000sccm) it is introduced into processing chamber housing.There is the high fdrequency component (13.56MHz) applied at 590W and in 220W by applying The mixed frequency RF power of the low frequency component (350KHz) of lower application forms plasma.It is handled during chamber allocating technology The temperature of chamber maintains 400 DEG C to about 550 DEG C, for example, about 470 DEG C.Panel temperature maintain about 100 DEG C to about 300 DEG C it Between, such as 200 DEG C.Chamber pressure maintains about 1 support to about 20 supports, for example, about 4.5 supports to about 10 supports.Chamber allotment layer has With a thickness of about 1500 angstroms to about 20000 angstroms, such as about 2000 angstroms to about 15000 angstroms, for example, about 10000 angstroms, this depends on processing Substrate quantity.Before chamber allocating technology in some examples of 7 substrates of processing, allotment layer can have about 10000 Angstrom thickness.Although what is discussed is silica, it is contemplated that chamber allotment layer may include amorphous silicon layer, it is described non- Crystal silicon layer can be deposited by reacting hydrogen-containing gas with silicon-containing gas.
After completing frame 112, method 100 may proceed to end, or can be with any in repeat block 102 to 112 Frame, until handling predetermined quantity or all substrates in this batch.
The benefit of present disclosure includes that a kind of compensated using RF is changed with the consistent film uniformity for realizing multiple substrates Into clean method and depositing operation.It, can by being gradually lowered frequency RF power during dielectric layer on a collection of substrate To minimize film character drift and cleaning frequency.For example, can drift about to avoid film character in the processing chamber (due to because of AlF The variation of panel emissivity caused by accumulation).It eliminates the uncontrolled oblique change of gas, pressure and RF power and eliminates and cut to chamber The unnecessary steering changed can improve technology stability.Can the substrate of predetermined quantity complete deposition before, period and/or Execute improved cleaning procedure later, with help from the panel of processing chamber housing or other chamber parts removal aluminum fluoride and it is other not Desired residue.Therefore, the service life of panel and/or chamber part is extended.
Although foregoing teachings are directed to the implementation of present disclosure, the basic of present disclosure is not being departed from In the case where range, it can be envisaged that present disclosure other and further realize mode.

Claims (20)

1. a kind of method for handling substrate in the processing chamber, comprising:
(a) the first RF power dielectric layer on the first substrate is used under first chamber pressure；
(b) it is sequentially deposited dielectric layer on N number of substrate after the first substrate under second chamber pressure, wherein N is 5 To 10 integer, and wherein depositing each substrate in N number of substrate includes using the 2nd RF power, the 2nd RF power tool There is the power density than the first RF power about 0.21W/cm low2To about 0.35W/cm2Power density；
(c) chamber cleaning procedure is executed in the case where substrate is not present；And
(d) (a) to (c) is repeated.
2. the method as described in claim 1, wherein the second chamber pressure is lower than the first chamber pressure.
3. the method as described in claim 1, wherein it includes fluorine and/or fluoro free radical (F*) that the chamber cleaning skill, which uses, Clean gas.
4. method as claimed in claim 3 further comprises:
After (c), the deposition allotment layer on the surface of the chamber part in the processing region that the processing chamber housing is set, Wherein the allotment layer has about 8000 angstroms to about 20000 angstroms of thickness.
5. method as claimed in claim 4, wherein the allotment layer is silica or amorphous silicon.
6. the method as described in claim 1, wherein the chamber cleaning skill includes: the first cleaning stage, described first is clear The clean stage is performed with the first electrode spacing of about 200 mils to about 800 mils；And second cleaning stage, described second is clear The clean stage is performed with the second electrode spacing of about 900 Mills to about 1200 mils.
7. the method as described in claim 1, wherein the temperature of substrate support is maintained about 400 DEG C during (a) and (b) To about 650 DEG C.
8. the method as described in claim 1, wherein the processing chamber housing is maintained about 400 DEG C to about 550 DEG C during (c) Temperature.
9. a kind of method for handling substrate in the processing chamber, comprising:
(a) first substrate is handled under first chamber pressure using the first frequency RF power and the first low frequency RF power described Dielectric layer on first substrate；
(b) it is sequentially processed under second chamber pressure in N number of substrate after the first substrate to be deposited on N number of substrate Dielectric layer, wherein N is 5 to 10 integer, and wherein handling each substrate in N number of substrate includes using the second high-frequency RF function Rate and the second low frequency RF power, wherein second frequency RF power has than for depositing institute on previous substrate immediately Give an account of the low about 0.21W/cm of power density of first frequency RF power of electric layer2To about .35W/cm2Power density；
(c) chamber cleaning procedure is executed in the case where substrate is not present；And
(d) (a) to (c) is repeated, until all processed from batch of all substrates.
10. method as claimed in claim 9, wherein second low frequency RF power is identical as first low frequency RF power.
11. method as claimed in claim 9, wherein the second chamber pressure is lower than the first chamber pressure.
12. method as claimed in claim 9, wherein the chamber cleaning skill includes: the first cleaning stage, described first is clear The clean stage is performed within about 10 seconds duration and with the first electrode spacing of about 200 mils to about 800 mils；And the Two cleaning stages, second cleaning stage is within about 20 seconds duration and with the of about 900 Mills to about 1200 mils Two electrode spacings are performed.
13. method as claimed in claim 12, further comprises:
After the chamber clean technique, the surface of the chamber part in the processing region that the processing chamber housing is set it Upper deposition deploys layer, wherein the allotment layer has about 8000 angstroms to about 20000 angstroms of thickness.
14. method as claimed in claim 13, wherein the allotment layer is silica or amorphous silicon.
15. method as claimed in claim 13, wherein the dielectric layer use is by silicon, silica, silicon nitride or silicon oxynitride The plasma that precursor mix is formed deposits.
16. method as claimed in claim 9, wherein the temperature of substrate support is maintained about 400 during (a) and (b) DEG C to about 650 DEG C.
17. method as claimed in claim 9, wherein the processing chamber housing is maintained about 400 DEG C to about 550 during (c) DEG C temperature.
18. a kind of method for handling substrate in the processing chamber, comprising:
N substrate is handled, wherein N is greater than 1 integer, and the processing N substrate includes:
It is situated between under first chamber pressure using the first frequency RF power and the first low frequency RF power with being deposited on the N substrate The first part of electric layer；
Using the second frequency RF power and the second low frequency RF power to deposit institute on the N substrate under second chamber pressure The second part of electric layer is given an account of, wherein second frequency RF power is with lower than the power density of first frequency RF power About 0.21W/cm2To about 0.35W/cm2Power density, and the second chamber pressure be lower than the first chamber pressure；With And
The N substrate is removed from the processing chamber housing；
Handle (N+1) substrate, comprising:
Under the second chamber pressure using the second frequency RF power and the second low frequency RF power on (N+1) substrate Dielectric layer, wherein second frequency RF power has than the institute for depositing the dielectric layer on the N substrate State the low about 0.21W/cm of power density of first frequency RF power of first part2To about 0.35W/cm2Power density； And
(N+1) substrate is taken out from processing chamber housing；And
By the way that the temperature of the processing chamber housing to be maintained to about 550 DEG C of the first temperature, then described in clean gas is introduced The processing chamber housing is cooled down about 60 seconds to execute chamber cleaning procedure before in processing chamber housing.
19. method as claimed in claim 18, wherein the clean gas includes fluorine and/or fluoro free radical (F*).
20. method as claimed in claim 19, further comprises:
After executing the chamber clean technique, the table of the chamber part in the processing region that the processing chamber housing is set Deposition allotment layer on face, wherein the allotment layer has about 8000 angstroms to about 20000 angstroms of thickness.
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