JP2014099623A - Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an epitaxial substrate in which an Si substrate is used as a base substrate, and with which a HEMT device with a high breakdown voltage can be achieved.SOLUTION: An epitaxial substrate, in which a group of group-III nitride layers is formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer which is made of AlN and a layer with many crystal defects configured of at least one kind from a columnar or granular crystal or domain and having an average film thickness of 40-200 nm, and has an interface between a second group-III nitride layer and the first group-III nitride layer of a three-dimensional uneven surface, while a projecting part whose side wall is formed by a (10-11) plane or a (10-12) plane of AlN is present at a density of 5×10-5×10/cmand at an average interval of 45-140 nm or less; and a third group-III nitride layer which is epitaxially formed on the second group-III nitride layer and is a graded composition layer where the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.

Description

  The present invention relates to an epitaxial substrate for a semiconductor device, and more particularly to an epitaxial substrate configured using a group III nitride.

  Nitride semiconductors have a wide band gap of direct transition type, a high breakdown electric field, and a high saturation electron velocity. Therefore, semiconductors for light emitting devices such as LEDs and LDs, and high frequency / high power electronic devices such as HEMTs. It is attracting attention as a material. For example, a HEMT (High Electron Mobility Transistor) element formed by laminating a barrier layer made of AlGaN and a channel layer made of GaN has a laminated interface due to a large polarization effect (spontaneous polarization effect and piezoelectric polarization effect) peculiar to nitride materials. This utilizes the feature that a high-concentration two-dimensional electron gas (2DEG) is generated at the (heterointerface) (for example, see Non-Patent Document 1).

  In some cases, a single crystal (heterogeneous single crystal) having a composition different from that of the group III nitride, such as SiC, is used as a base substrate used for an epitaxial substrate for HEMT elements. In this case, a buffer layer such as a strained superlattice layer or a low temperature growth buffer layer is generally formed on the base substrate as an initial growth layer. Therefore, epitaxially forming the barrier layer, the channel layer, and the buffer layer on the base substrate is the most basic configuration of the HEMT element substrate using the base substrate made of different single crystals. In addition, a spacer layer having a thickness of about 1 nm may be provided between the barrier layer and the channel layer for the purpose of promoting spatial confinement of the two-dimensional electron gas. The spacer layer is made of, for example, AlN. Furthermore, a cap layer made of, for example, an n-type GaN layer or a superlattice layer is formed on the barrier layer for the purpose of controlling the energy level at the outermost surface of the substrate for HEMT elements and improving the contact characteristics with the electrode. Sometimes it is done.

  On the other hand, for the purpose of reducing the cost of an epitaxial substrate and further integrating it with a silicon-based circuit device, research and development using single crystal silicon as a base substrate has been carried out in producing the nitride device as described above. (For example, see Patent Document 1 to Patent Document 3 and Non-Patent Document 2). When a conductive material such as silicon is selected for the base substrate of the epitaxial substrate for the HEMT device, a field plate effect is imparted from the back surface of the base substrate, so that a HEMT device capable of high withstand voltage and high-speed switching is provided. Design becomes possible.

  It is also already known that increasing the total film thickness of the channel layer and the barrier layer and improving the dielectric breakdown strength of both layers are effective for making the HEMT device epitaxial substrate have a high withstand voltage structure. (For example, see Non-Patent Document 2 to Non-Patent Document 5).

Japanese Patent Laid-Open No. 10-163528 JP 2004-349387 A JP-A-2005-350321

"Highly Reliable 250W GaN High Electron Mobility Transistor Power Amplifier" Toshihide Kikkawa, Jpn. J. Appl. Phys. 44, (2005), 4896. "High power AlGaN / GaN HFET with a high breakdown voltage of over 1.8kV on 4 inch Si substrates and the suppression of current collapse", Nariaki Ikeda, Syuusuke Kaya, Jiang Li, Yoshihiro Sato, Sadahiro Kato, Seikoh Yoshida, Proceedings of the 20th International Symposium on Power Semiconductor Devices & IC's May 18-22,2008 Oralando, FL ", pp.287-290 Applied Physics Express 1 (2008) 011101 IEICE Technical Report, Vol.106, No.459, (2007), pp189-192 IEICE Technical Report Vol.108, No.376, (2009), pp129-133

  However, it is known that it is very difficult to form a high-quality nitride film on a silicon substrate for the following reason as compared with the case of using a sapphire substrate or a SiC substrate.

  First, there is a great difference in lattice constant values between silicon and nitride materials. This causes misfit dislocations at the interface between the silicon substrate and the growth film, and promotes a three-dimensional growth mode at the timing from nucleation to growth. In other words, it is a factor that hinders the formation of a good nitride epitaxial film having a low dislocation density and a flat surface.

  In addition, since the value of the thermal expansion coefficient of a nitride material is larger than that of silicon, in the process of epitaxially growing a nitride film on a silicon substrate at a high temperature and then lowering the temperature to near room temperature, a tensile stress is generated in the nitride film. Work. As a result, cracks are likely to occur on the film surface, and large warpage is likely to occur in the substrate.

  In addition, it is also known that trimethylgallium (TMG), which is a raw material gas for a nitride material in vapor phase growth, easily forms a liquid phase compound with silicon, and hinders epitaxial growth.

  When the conventional techniques disclosed in Patent Documents 1 to 3 and Non-Patent Document 1 are used, it is possible to epitaxially grow a GaN film on a silicon substrate. However, the crystal quality of the obtained GaN film is never better than that obtained when SiC or sapphire is used as the base substrate. For this reason, when an electronic device such as a HEMT is manufactured using the conventional technology, there are problems that the electron mobility is low and the leakage current and breakdown voltage at the time of OFF are low.

  The method disclosed in Non-Patent Document 3 has a certain effect in improving the withstand voltage of the HEMT device, but as the film thickness increases, the distance between the substrate and the barrier layer / channel layer interface increases, resulting in the back surface. It is known that the effect of the field plate is reduced.

  When the method disclosed in Non-Patent Document 4 is used, there is a possibility that the withstand voltage of the HEMT element can be improved without greatly increasing the film thickness, but the portion where the two-dimensional electron gas travels is also a mixed crystal compound. There is a problem that the electron mobility is lowered by so-called alloy scattering, which leads to an increase in on-resistance.

  When the method disclosed in Non-Patent Document 5 is used, there is a possibility that a high breakdown voltage of the HEMT device can be achieved while suppressing a decrease in mobility of the two-dimensional electron gas, but the band discontinuity due to the lamination of GaN and AlGaN. Due to the characteristics and the discontinuity of the lattice, there is a site where electric field concentration occurs when a high electric field is applied. As a result, there is a problem that the withstand voltage is lowered and the leakage current is increased.

  In the first place, what is disclosed in Non-Patent Document 3 to Non-Patent Document 5 is not an example of forming a nitride film on a silicon substrate. Even in the case of forming a nitride film, in order to obtain the effect of improving the withstand voltage as described above, it is necessary to form a high-quality nitride film on a silicon substrate as a precondition. In any of Reference 3 to Non-Patent Document 5, there is no disclosure or suggestion of a technique for achieving and matching the quality assurance of the nitride film and the improvement in withstand voltage.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide an epitaxial substrate that can realize a HEMT device having a high breakdown voltage by using a silicon substrate as a base substrate.

In order to solve the above-mentioned problems, the invention of claim 1 is such that the (0001) crystal plane is substantially parallel to the substrate surface of the base substrate on the base substrate that is single crystal silicon of (111) orientation. An epitaxial substrate for a semiconductor element, formed with a group III nitride layer group, the first group III nitride layer made of AlN formed on the base substrate, and the first group III A second group III nitride layer made of Al _p Ga _1-p N (0 ≦ p <1) and epitaxially formed on the second group III nitride layer. A third group III nitride layer represented by a composition formula of Al _q Ga _1-q N (0 ≦ q ≦ 1), and at least epitaxially formed on the third group III nitride layer. One fourth group III nitride layer, and the first group III nitride layer is columnar or grain-shaped. A polycrystalline defect-containing layer having an average film thickness of 40 nm or more and 200 nm or less, composed of at least one of the following crystals or domains: the first group III nitride layer and the second group III nitride layer; The interface is a three-dimensional uneven surface, and the protrusion of the first group III nitride layer in which the (10-11) surface or (10-12) surface of AlN forms a side wall is 5 in the interface. The third group III nitride layer is present at a density of × 10 ⁹ / cm ² or more and 5 × 10 ¹⁰ / cm ² or less and an average interval of 45 nm or more and 140 nm or less, and the third group III nitride layer is the second group III nitride Formed as a graded composition layer in which the abundance ratio of Al in the group III element continuously decreases from the first boundary with the physical layer toward the second boundary with the fourth group III nitride layer. It is characterized by.

  The invention according to claim 2 is the epitaxial substrate for a semiconductor device according to claim 1, wherein the rate of change of the Al abundance ratio in the third group III nitride layer is 0.13% / nm or less. It is characterized by.

The invention of claim 3 is the epitaxial substrate for a semiconductor device according to claim 1 or 2, wherein the thickness of the third group III nitride layer is t1 (nm) and the fourth group III nitride is provided. When the thickness of the object is t2 (nm), t2 ≦ 40e ^0.0017t1 .

  A fourth aspect of the present invention is the epitaxial substrate for a semiconductor device according to any one of the first to third aspects, wherein the thickness of the third group III nitride layer is not less than 1 μm and not more than 3 μm. And

  Invention of Claim 5 is an epitaxial substrate for semiconductor elements in any one of Claim 1 thru | or 4, Comprising: The said 4th group III nitride layer is said 3rd group III nitride layer, A layer made of GaN is provided as an adjacent layer, and the second boundary portion of the third group III nitride layer is made of GaN.

  A sixth aspect of the invention is an epitaxial substrate for a semiconductor device according to any one of the first to fifth aspects, wherein q = qa at the first boundary portion of the third group III nitride layer. In this case, 0.8 ≦ qa ≦ 1.

  The invention according to claim 7 is the epitaxial substrate for a semiconductor device according to claim 6, wherein the first boundary portion of the third group III nitride layer is made of AlN.

  The invention of claim 8 is the epitaxial substrate for a semiconductor device according to any one of claims 1 to 7, wherein a plurality of the third group III nitride layers are laminated. And

  The invention of claim 9 is the epitaxial substrate for a semiconductor device according to any one of claims 1 to 7, wherein the third group III nitride layer and the fourth group III nitride layer are A layer made of AlN is further provided therebetween.

  The invention of claim 10 is the epitaxial substrate for a semiconductor device according to any one of claims 1 to 7, wherein the second group III nitride layer and the third group III nitride layer are It further comprises a superlattice structure layer in which two or more types of group III nitride layers having different compositions are periodically laminated.

  The invention of claim 11 is the epitaxial substrate for a semiconductor device according to any one of claims 1 to 10, wherein the third group III nitride layer is doped with an acceptor element. And

  A twelfth aspect of the invention is the epitaxial substrate for a semiconductor device according to the eleventh aspect, wherein the acceptor element is Mg.

  A thirteenth aspect of the present invention is the epitaxial substrate for a semiconductor device according to any one of the first to twelfth aspects, wherein the second group III nitride layer is doped with a donor element. And

  A fourteenth aspect of the invention is an epitaxial substrate for a semiconductor device according to the thirteenth aspect, wherein the donor element is Si.

  According to a fifteenth aspect of the present invention, a semiconductor element is manufactured using the epitaxial substrate according to any one of the first to fourteenth aspects.

According to a sixteenth aspect of the present invention, a group III nitride layer group having a (0001) crystal plane substantially parallel to a substrate surface of the base substrate is formed on a base substrate that is single crystal silicon with (111) orientation. A method of manufacturing an epitaxial substrate for a semiconductor device, comprising: a first forming step of forming a first group III nitride layer made of AlN on the base substrate; and a step of forming on the second group III nitride layer. Forming a second group III nitride layer made of Al _p Ga _1-p N (0 ≦ p <1), and Al _q Ga ₁ on the second group III nitride layer. _A third forming step of epitaxially forming a third group III nitride layer represented by a composition formula of _−q N (0 ≦ q ≦ 1), and at least one of the third group III nitride layer on the third group III nitride layer; A fourth forming step of epitaxially forming a fourth group III nitride layer, wherein the first forming step includes: The first group III nitride layer is composed of at least one of columnar or granular crystals or domains, the surface is a three-dimensional irregular surface, and the average film thickness is 40 nm or more and 200 nm or less. a-containing layer in the surface of AlN (10-11) plane or (10-12) plane is convex portion forming the side walls 5 × ¹⁰ 9 / cm ² or more 5 × ¹⁰ 10 / cm ² or less And in the third formation step, the third group III nitride layer is formed between the second group III nitride layer and the second group III nitride layer. Forming a graded composition layer in which the abundance ratio of Al in the group III element continuously decreases from the boundary portion of 1 toward the second boundary portion with the fourth group III nitride layer. To do.

  The invention according to claim 17 is the method for manufacturing an epitaxial substrate for a semiconductor device according to claim 16, wherein, in the third forming step, the rate of change of the Al abundance ratio is 0.13% / nm or less. Thus, the third group III nitride layer is formed.

The invention of claim 18 is the method of manufacturing an epitaxial substrate for a semiconductor device according to claim 16 or claim 17, wherein the thickness of the third group III nitride layer is t1 (nm). When the thickness of the group III nitride is t2 (nm), the third group III nitride layer and the fourth group III nitride layer are formed to ^satisfy t2 ≦ 40e ^0.0017t1. Features.

  The invention of claim 19 is the method for manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 18, wherein the third group III nitride layer is formed in the third formation step. It is characterized by being formed in a thickness of 1 μm or more and 3 μm or less.

  The invention of claim 20 is the method for manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 19, wherein in the third formation step, the third group III nitride layer is formed. The second boundary portion is formed of GaN, and in the fourth forming step, a layer adjacent to the third group III nitride layer is formed of GaN.

  A twenty-first aspect of the invention is a method of manufacturing an epitaxial substrate for a semiconductor device according to any one of the sixteenth to twentieth aspects, wherein the third group III nitride layer is formed in the third forming step. The third group III nitride layer is formed so that 0.8 ≦ qa ≦ 1 when q = qa in the first boundary portion.

  The invention of claim 22 is the method of manufacturing an epitaxial substrate for a semiconductor device according to claim 21, wherein in the third formation step, the first boundary portion of the third group III nitride layer is formed. It is formed by AlN.

  The invention of claim 23 is the method for manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 22, wherein a plurality of the third group III nitride layers are formed in the third formation step. Are laminated.

  The invention of claim 24 is the method of manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 22, wherein the third group III nitride layer is formed after the third forming step. A layer made of AlN is formed thereon, and in the fourth forming step, the fourth group III nitride layer is formed on the layer made of AlN.

  The invention of claim 25 is the method of manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 22, wherein the second group III nitride layer is formed after the second forming step. A superlattice structure layer in which two or more types of group III nitride layers having different compositions are periodically stacked is formed on the superlattice structure layer in the third formation step. A group III nitride layer is formed.

  The invention of claim 26 is the method of manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 25, wherein in the third formation step, the third element is doped with an acceptor element. A group III nitride layer is formed.

  A twenty-seventh aspect of the invention is the method for producing an epitaxial substrate for a semiconductor device according to the twenty-sixth aspect, wherein the acceptor element is Mg.

  The invention of claim 28 is the method of manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 27, wherein in the second formation step, the second element is doped with a donor element. A group III nitride layer is formed.

  A twenty-ninth aspect of the invention is the method for producing an epitaxial substrate for a semiconductor device according to the twenty-eighth aspect, wherein the donor element is Si.

  The invention of claim 30 is characterized in that an epitaxial substrate for a semiconductor device is produced by using the method for producing an epitaxial substrate according to any one of claims 16 to 29.

  The invention of claim 31 is characterized in that the semiconductor element includes an epitaxial substrate for a semiconductor element manufactured by using the method for manufacturing an epitaxial substrate according to any one of claims 16 to 29.

  According to the invention of claim 1 to claim 31, by providing the first group III nitride layer as a polycrystalline defect-containing layer having poor crystallinity, the base substrate, the second group III nitride layer, The lattice misfit is reduced. Further, by disposing the interface between the first group III nitride layer and the second group III nitride layer as a three-dimensional uneven surface, dislocations generated in the first group III nitride layer are bent at the interface. As a result, coalescence disappears in the second group III nitride layer. As a result, even when a single crystal silicon substrate is used as the base substrate, an epitaxial substrate with a Group III nitride functional layer having the same quality and characteristics as when using a sapphire substrate or SiC substrate is realized. can do.

  In addition, the third group III nitride layer is moved from the first boundary portion with the second group III nitride layer toward the second boundary portion with the fourth group III nitride layer. By forming it as a graded composition layer in which the abundance ratio of Al is continuously reduced, it is possible to realize an epitaxial substrate which is crack-free and warpage is suppressed and the dislocation density is reduced.

  By using such an epitaxial substrate, for example, a semiconductor element such as HEMT can be provided at a lower cost than when a sapphire substrate or a SiC substrate is used, and the withstand voltage can be increased. Reduction of leakage current can also be realized.

1 is a schematic cross-sectional view schematically showing a configuration of an epitaxial substrate 10 according to a first embodiment of the present invention. 1 is a diagram showing a HAADF (high angle scattered electron) image of an epitaxial substrate 10. FIG. 2 is a diagram schematically showing dislocation disappearance in an epitaxial substrate 10. FIG. It is a figure which illustrates the relationship between the film thickness of the gradient composition layer 6 and the functional layer 5, and the presence or absence of a crack. 3 is a schematic cross-sectional view schematically showing a configuration of an epitaxial substrate 20 according to a second embodiment of the present invention. FIG. 4 is a schematic cross-sectional view schematically showing a configuration of an epitaxial substrate 30 according to a third embodiment of the present invention. FIG. 6 is a schematic cross-sectional view schematically showing a configuration of an epitaxial substrate 40 according to a fourth embodiment of the present invention. FIG. It is a figure which shows the concentration gradient about each sample of Example 1 and Comparative Example 2. FIG. It is a figure which lists and shows the evaluation result about each sample of Example 1, the comparative example 1, and the comparative example 2. FIG. It is a figure which lists and shows the evaluation result about each sample of Example 2. FIG.

<First Embodiment>
<Schematic configuration of epitaxial substrate>
FIG. 1 is a schematic cross-sectional view schematically showing a configuration of an epitaxial substrate 10 according to the first embodiment of the present invention.

  The epitaxial substrate 10 mainly includes a base substrate 1, an initial layer 3, a first intermediate layer 4, a functional layer 5, and a gradient composition layer 6. Further, the epitaxial substrate 10 may be provided with an interface layer 2 between the base substrate 1 and the initial layer 3 as shown in FIG. The interface layer 2 will be described later. Hereinafter, each layer formed on the base substrate 1 may be collectively referred to as an epitaxial film. In addition, the abundance ratio of Al in the group III element may be referred to as an AlN molar fraction for convenience.

  The base substrate 1 is a (111) plane single crystal silicon wafer. Although there is no special restriction | limiting in the thickness of the base substrate 1, For convenience of handling, it is preferable to use the base substrate 1 which has a thickness of several hundred micrometers to several mm.

  The initial layer 3, the first intermediate layer 4, the functional layer 5, and the graded composition layer 6 are each composed of a wurtzite group III nitride whose (0001) crystal plane is substantially the same as the substrate surface of the base substrate 1. It is a layer formed by an epitaxial growth technique so as to be parallel. These layers are preferably formed by metal organic chemical vapor deposition (MOCVD).

  The initial layer 3 is a layer made of AlN (first group III nitride layer). The initial layer 3 is composed of a large number of fine columnar crystals and the like (at least one of columnar crystals, granular crystals, columnar domains, or granular domains) grown in a direction substantially perpendicular to the substrate surface of the base substrate 1 (film forming direction). Layer. In other words, the initial layer 3 is uniaxially oriented in the stacking direction of the epitaxial substrate 10, but contains a large number of crystal grain boundaries or dislocations along the stacking direction and has a poor crystallinity. Is a layer. In the present embodiment, for convenience, the term “crystal grain boundary” including domain grain boundaries or dislocations may be used. The distance between crystal grain boundaries in the initial layer 3 is about several tens of nm at most.

  The initial layer 3 having such a configuration has an X-ray rocking curve half-value width of 0.5 degrees or more and 1.1 degrees on the (0002) plane, which is an indication of the magnitude of the mosaic property with respect to the c-axis tilt component or some degree of screw dislocation. The X-ray rocking curve half-value width of the (10-10) plane, which is a small index of the degree of mosaicity or edge dislocation about the rotational component of the crystal with the c-axis as the rotation axis, is 0 It is formed to be 8 degrees or more and 1.1 degrees or less.

On the other hand, the first intermediate layer 4 is a layer made of a group III nitride (second group III nitride) formed on the initial layer 3 and having a composition of Al _p Ga _1-p N (0 ≦ p <1). Material layer). Although details will be described later, in the epitaxial substrate 10 according to the present embodiment, the crystal quality of the epitaxial film and the accumulated state of strain energy are different before and after the first intermediate layer 4.

  The functional layer 5 is at least one layer formed of a group III nitride formed on the gradient composition layer 6, and a predetermined semiconductor layer, an electrode, or the like is further formed on the epitaxial substrate 10. In the case of constituting a semiconductor element, it is a layer that exhibits a predetermined function. Therefore, the functional layer 5 is formed of one or more layers having a composition and thickness corresponding to the function.

  In FIG. 1, assuming that the epitaxial substrate 10 is used as a substrate for a HEMT device, the functional layer 5 includes a channel layer 5a made of high-resistance GaN, a first spacer layer 5b made of AlN, AlGaN, The case where the barrier layer 5c made of InAlN or the like is formed is illustrated. The channel layer 5a is preferably formed to a thickness of about several μm. The first spacer layer 5b is preferably formed to a thickness of about 1 nm. However, the first spacer layer 5b is not an essential component in configuring the HEMT element. The barrier layer 5c is preferably formed to a thickness of about several tens of nm. By having such a layer structure, a two-dimensional electron gas region is formed in the vicinity of the heterojunction interface between the channel layer 5a and the barrier layer 5c (or the first spacer layer 5b) due to a spontaneous polarization effect or a piezoelectric polarization effect. .

  Then, a HEMT element is obtained by forming a gate electrode, a source electrode, and a drain electrode (not shown) on the barrier layer 5c. A known technique such as a photolithography process can be applied to the formation of these electrodes.

  Alternatively, a concentric Schottky barrier diode is realized by forming one group III nitride layer (for example, a GaN layer) as the functional layer 5 and forming an anode and a cathode (not shown) thereon. . Known techniques such as a photolithography process can also be applied to these electrode formations.

  The graded composition layer 6 is a layer made of a group III nitride formed between the first intermediate layer 4 and the functional layer 5. However, the graded composition layer 6 is formed such that the abundance ratio of Al in the group III element continuously decreases from the boundary portion 6 a with the first intermediate layer 4 toward the boundary portion 6 b with the functional layer 5. Become. That is, it is formed such that the closer to the first intermediate layer 4, the richer the Al, and the closer to the functional layer 5, the richer the Ga.

More specifically, it is assumed that the gradient composition layer 6 is represented by a composition formula of Al _q Ga _1-q N (0 ≦ q ≦ 1), and further, in the boundary portion 6a with the first intermediate layer 4, q = In the boundary portion 6b between qa and the functional layer 5, when q = qb, at least the relationship of qb <qa is formed. The rate of change of the Al abundance ratio q in the epitaxial growth direction (composition change rate) does not need to be constant and may vary from position to position, but the maximum composition change rate is 0.13% / nm or less. It is necessary. In the present embodiment, it is assumed that the graded composition layer 6 is formed so that the abundance ratio of Al in the group III element is “continuously” smaller when such requirements are satisfied.

  The gradient composition layer 6 is preferably formed to a thickness of about 100 nm to 3 μm. More preferably, it is formed to a thickness of about 1 μm to 3 μm. Note that the graded composition layer 6 exhibits n-type conductivity due to residual donors. Details of the gradient composition layer 6 will be described later.

<Detailed structure and effects of initial layer and intermediate layer>
The interface I1 (the surface of the initial layer 3) between the initial layer 3 and the first intermediate layer 4 is a three-dimensional uneven surface reflecting the external shape such as columnar crystals constituting the initial layer 3. It is clearly confirmed in the HAADF (high angle scattered electron) image of the epitaxial substrate 10 illustrated in FIG. 2 that the interface I1 has such a shape. The HAADF image is a mapping image of the integrated intensity of electrons inelastically scattered at a high angle, obtained by a scanning transmission electron microscope (STEM). In the HAADF image, the image intensity is proportional to the square of the atomic number, and the portion where an atom with a large atomic number exists is observed brighter (whiter).

  In the epitaxial substrate 10, the initial layer 3 is made of AlN, whereas the first intermediate layer 4 is a layer containing at least Ga and having a composition different from that of AlN, as indicated by the above composition formula. Since Ga has a larger atomic number than Al, in FIG. 2, the first intermediate layer 4 is observed to be relatively bright and the initial layer 3 is observed to be relatively dark. Thereby, it can be easily recognized from FIG. 2 that the interface I1 between them is a three-dimensional uneven surface.

In the schematic cross section of FIG. 1, the protrusions 3a of the initial layer 3 are shown to be positioned at approximately equal intervals, but this is merely for convenience of illustration, and actually the protrusions are not necessarily evenly spaced. 3a is not located. Preferably, the initial layer 3 is formed such that the density of the protrusions 3a is 5 × 10 ⁹ / cm ² or more and 5 × 10 ¹⁰ / cm ² or less, and the average interval of the protrusions 3a is 45 nm or more and 140 nm or less. The When these ranges are satisfied, it is possible to form the functional layer 5 having particularly excellent crystal quality. In the present embodiment, the convex portion 3a of the initial layer 3 indicates a substantially vertex position of a convex portion on the surface (interface I1). In addition, as a result of experiments and observations by the inventors of the present invention, it is confirmed that the side wall of the convex portion 3a is formed by the (10-11) plane or the (10-12) plane of AlN. .

  In order to form the convex portions 3a satisfying the above-described density and average interval on the surface of the initial layer 3, it is preferable to form the initial layer 3 so that the average film thickness is 40 nm or more and 200 nm or less. When the average film thickness is smaller than 40 nm, it is difficult to realize a state in which AlN covers the substrate surface while forming the convex portions 3a as described above. On the other hand, if the average film thickness is to be made larger than 200 nm, it becomes difficult to form the convex portions 3a as described above because the AlN surface begins to flatten.

  The formation of the initial layer 3 is realized under predetermined epitaxial growth conditions, but forming the initial layer 3 with AlN does not include Ga that forms a liquid phase compound with silicon, and Since the lateral growth is relatively difficult to proceed, it is preferable in that the interface I1 is easily formed as a three-dimensional uneven surface.

  In the epitaxial substrate 10, the base layer 1 and the first intermediate layer 4 are interposed between the base layer 1 and the first intermediate layer 4 by interposing the initial layer 3, which is a multi-defect-containing layer having crystal grain boundaries in the above-described manner. The lattice misfit between the substrate 1 and the first intermediate layer 4 is relaxed, and the accumulation of strain energy due to the lattice misfit is suppressed. The range of the half width of the X-ray rocking curve of the (0002) plane and the (10-10) plane for the initial layer 3 described above is determined as a range in which the accumulation of strain energy due to the crystal grain boundary is suitably suppressed. .

  However, due to the presence of the initial layer 3, a large number of dislocations originating from crystal grain boundaries such as columnar crystals of the initial layer 3 propagate to the first intermediate layer 4. In the present embodiment, the dislocations are effectively reduced by making the interface I1 between the initial layer 3 and the first intermediate layer 4 a three-dimensional uneven surface as described above. FIG. 3 is a diagram schematically showing dislocation disappearance in the epitaxial substrate 10. In FIG. 3, an interface layer 2 described later is omitted.

  Since the interface I1 between the initial layer 3 and the first intermediate layer 4 is formed as a three-dimensional uneven surface, most of the dislocations d generated in the initial layer 3 are from the initial layer 3 as shown in FIG. When propagating (penetrating) to the first intermediate layer 4, it is bent at the interface I1. More specifically, the dislocation d (d0) propagating in a portion substantially parallel to the base substrate 1 in the interface I1 can reach the upper side of the first intermediate layer 4, but the interface I1 with respect to the base substrate 1 is included in the interface I1. The dislocation d (d1) propagating through the inclined part disappears in the first intermediate layer 4. As a result, among the dislocations starting from the initial layer 3, only a few dislocations penetrate the first intermediate layer 4.

  Further, as schematically shown in FIG. 3, the first intermediate layer 4 is preferably formed along the surface shape of the initial layer 3 at the initial stage of growth, but gradually as the growth proceeds. The surface is flattened and finally formed to have a surface roughness of 10 nm or less. In the present embodiment, the surface roughness is represented by an average roughness ra for a 5 μm × 5 μm region measured by an AFM (atomic force microscope). By the way, the first intermediate layer 4 is formed of a group III nitride having a composition containing at least Ga, in which the lateral growth is relatively easy, and the surface flatness of the first intermediate layer 4 is good. This is preferable.

  The average thickness of the first intermediate layer 4 is preferably 40 nm or more. This is because, when formed to be thinner than 40 nm, the unevenness derived from the initial layer 3 cannot be sufficiently flattened, or the disappearance due to the mutual coalescence of the dislocations propagated to the first intermediate layer 4 does not occur sufficiently. This is because the problem arises. When the average thickness is 40 nm or more, the dislocation density is reduced and the surface is flattened effectively. Therefore, the upper limit of the thickness of the first intermediate layer 4 is particularly limited in terms of technology. However, it is preferably formed to a thickness of about several μm or less from the viewpoint of productivity.

By being formed in the above-described manner, the first intermediate layer 4 has a favorable dislocation density at least in the vicinity of the surface (in the vicinity of the interface with the gradient composition layer 6) and a favorable crystal. Have quality. Thereby, also in the gradient composition layer 6 and the functional layer 5 formed thereon, good crystal quality can be obtained. Alternatively, depending on the composition and formation conditions of the first intermediate layer 4, the gradient composition layer 6, and the functional layer 5, the functional layer 5 can be formed with lower dislocations than the first intermediate layer 4. For example, the dislocation density is 6 × 10 ⁹ / cm ² or less (of which the density of screw dislocations is 2 × 10 ⁹ / cm ² or less), and the X-ray rocking curve half of (0002) plane and (10-10) plane It is possible to form the functional layer 5 with excellent crystal quality that the value width is 1000 sec or less. That is, the functional layer 5 is formed as a layer having low dislocations and very good crystallinity and having a very small mosaic degree as compared with the initial layer 3.

The value of dislocation density when a group III nitride layer group (epitaxial film) having the same total film thickness is formed on a sapphire substrate or SiC substrate via a low-temperature GaN buffer layer or the like by MOCVD is approximately 5 × 10 ⁸ to Since the range is 1 × 10 ¹⁰ / cm ² , the above results show that the epitaxial substrate having the same quality as that using the sapphire substrate uses a single crystal silicon wafer cheaper than the sapphire substrate as the base substrate 1. It means that it was realized.

<Interface layer>
As described above, the epitaxial substrate 10 may be provided with the interface layer 2 between the base substrate 1 and the initial layer 3. The interface layer 2 has a thickness of about several nm and is preferably made of amorphous SiAl _x O _y N _z .

When the interface layer 2 is provided between the base substrate 1 and the initial layer 3, the lattice misfit between the base substrate 1 and the first intermediate layer 4 is more effectively mitigated, and the first intermediate layer 4, the gradient composition layer 6 and the crystal quality of the functional layer 5 are further improved. That is, in the case where the interface layer 2 is provided, the AlN layer as the initial layer 3 has the same uneven shape as that in the case where the interface layer 2 is not provided, and there is an inherent grain boundary than in the case where the interface layer 2 is not provided. It is formed so that there is less. In particular, the initial layer 3 having an improved X-ray rocking curve half-width value in the (0002) plane is obtained. This is because, compared with the case where the initial layer 3 is formed directly on the base substrate 1, the nucleation of AlN that becomes the initial layer 3 proceeds in the case where the initial layer 3 is formed on the interface layer 2. As a result, the lateral growth is promoted as compared with the case where the interface layer 2 is not provided. The interface layer 2 is formed with a thickness not exceeding 5 nm. When such an interface layer 2 is provided, the initial layer 3 can be formed so that the half width of the X-ray rocking curve of the (0002) plane is in the range of 0.5 degrees or more and 0.8 degrees or less. . In this case, it is possible to form the functional layer 5 with further excellent crystal quality in which the X-ray rocking curve half-width of the (0002) plane is 800 sec or less and the screw dislocation density is 1 × 10 ⁹ / cm ² or less. it can.

  At the time of forming the initial layer 3, an aspect in which at least one of Si atoms and O atoms is diffused and dissolved in the initial layer 3, or at least one of N atoms and O atoms is diffused and dissolved in the base substrate 1. An aspect may be sufficient.

<Gradient composition layer>
Next, the gradient composition layer 6 will be described in more detail.

As described above, the gradient composition layer 6 is formed so that the abundance q of Al in the group III element decreases from the boundary portion 6a with the first intermediate layer 4 toward the boundary portion 6b with the functional layer 5. Become. Thereby, in the epitaxial substrate 10, the gradient composition layer 6 is formed so that the composition difference between the first intermediate layer 4 and the functional layer 5 adjacent to each other at the boundary portion 6a and the boundary portion 6b is reduced. In other words, in the epitaxial substrate 10, the first intermediate layer 4 and the functional layer 5 having different compositions (that is, having inherently different lattice constants) are stacked without causing a substantial heterointerface between them. This state is realized. This is because, in the formation process of the graded composition layer 6, the group III nitride crystal of Al _q Ga _1-q N constituting the graded composition layer 6 has a smaller lattice constant (Al-rich) formed immediately before. It was realized by growing while trying to match the crystal lattice. In such a case, unlike the epitaxial substrate having a heterointerface due to the functional layer 5 being directly formed on the first intermediate layer 4, the strain energy associated with the lattice misfit dislocation is not released and the first The intermediate layer 4 to the functional layer 5 are formed.

  From another viewpoint, the gradient composition layer 6 is formed in the first intermediate layer having excellent crystallinity while suppressing accumulation of strain energy due to lattice misfit with the base substrate 1. It can be said that it was performed in a mode in which strain energy is accumulated on the layer 4. From the viewpoint of the gradient composition layer 6 and the functional layer 5, this can be said that the first intermediate layer 4 is a ground layer with less distortion and excellent crystallinity.

  In the graded composition layer 6, the growth proceeds so that the abundance ratio q of Al in the group III element decreases from the boundary portion 6 a with the first intermediate layer 4 toward the boundary portion 6 b with the functional layer 5. A stronger compressive stress acts in the in-plane direction as it is formed later (away from the first intermediate layer 4). The subsequent formation of the functional layer 5 also proceeds in a state in which such compressive stress acts. In the process of manufacturing the epitaxial substrate 10, after the functional layer 5 is formed, tensile stress due to the difference in thermal expansion coefficient between the base substrate 1 and the epitaxial film acts in the in-plane direction. In the epitaxial substrate 10, the residual tensile stress is satisfactorily reduced as a result of the compressive stress and the tensile stress canceling and mitigating each other. Thereby, in the epitaxial substrate 10, even when the epitaxial film is formed with a large film thickness of about several μm, the occurrence of warpage and cracks on the surface is suitably suppressed.

  FIG. 4 is a diagram illustrating the relationship between the thickness of the gradient composition layer 6 and the functional layer 5 and the presence or absence of cracks. Specifically, the gradient composition layer 6 has a composition change (concentration gradient) between qa = 1 and qb = 0 and between the boundary portion 6a with the first intermediate layer 4 and the boundary portion 6b with the functional layer 5. The evaluation results are shown for epitaxial substrates formed with various thicknesses of GaN, while the functional layer 5 is formed with various thicknesses so that is linearly (linear function). Note that the surface of the functional layer 5 in the absence of cracks was a mirror surface. From the results shown in FIG. 4, the gradient composition layer 6 and the gradient composition layer 6 are formed so that the relationship between the film thickness t1 (nm) of the gradient composition layer 6 and the film thickness t2 (nm) of the functional layer 5 satisfies the following expression (1). By forming the functional layer 5, it can be said that the epitaxial substrate 10 in which no cracks are generated in the functional layer 5 is obtained.

t2 ≦ 40e ^0.0017t1 (1)
Furthermore, when the gradient composition layer 6 is formed as described above, the dislocation propagated from the first intermediate layer 4 disappears inside the gradient composition layer 6. Formation of the gradient composition layer 6 also has an effect of reducing the dislocation density of the functional layer 5 formed thereon.

  The effect of introducing the compressive stress as described above in the gradient composition layer 6 increases as the composition difference between the boundary portion 6a between the first intermediate layer 4 and the boundary portion 6b between the functional layer 5 in the gradient composition layer 6 increases. . Therefore, the qa value is closer to 1 and the qb value is closer to 0.

  For example, the HEMT device in which the epitaxial substrate 10 has a functional layer 5 including a channel layer 5a made of high-resistance GaN, a first spacer layer 5b made of AlN, and a barrier layer 5c made of AlGaN or InAlN in this order. In the case where it is used as a substrate, it is preferable that the graded composition layer 6 is formed so that 0.8 ≦ qa ≦ 1 and qb = 0.

In order to further increase the lattice constant at the boundary portion 6b in order to further increase the effect of introducing residual stress, instead of forming the boundary portion 6b with Al _q Ga _1-q N having a q value close to zero. Further, it may be formed of InN or InGaN. However, it should be noted that the growth conditions for forming the group III nitride containing In, such as the setting of the substrate temperature and the selection of the atmospheric gas, are larger than those when forming Al _q Ga _1-q N. .

<Relationship between graded composition layer and device characteristics>
Providing the graded composition layer 6 on the epitaxial substrate 10 used for producing an electronic device such as a HEMT element as described above has the following advantages.

  First, the formation of the functional layer 5 made of a high-quality crystal with little residual stress on the gradient composition layer 6 contributes to high performance of electronic devices (low on-resistance, low leakage current, high breakdown voltage). Yes.

Further, by interposing the graded composition layer 6 between the first intermediate layer 4 and the functional layer 5, the epitaxial substrate 10 can be thickened in a crack-free and small warp state. Has contributed to In addition, in the case of the present embodiment, the graded composition layer 6 is made of Al _q Ga _1-q N having a larger band gap and higher dielectric breakdown strength than GaN constituting the channel layer 5a formed immediately above it. It is formed of a group nitride. That is, the gradient composition layer 6 itself is a layer having a withstand voltage holding function. That is, in the epitaxial substrate 10, the gradient composition layer 6 can be said to be a breakdown voltage holding layer. As a result, in the present embodiment, by providing the gradient composition layer 6, not only is the breakdown voltage secured simply by increasing the thickness, but the breakdown voltage holding function of the gradient composition layer 6 itself is also increased. It will contribute. Therefore, in the epitaxial substrate 10, a higher breakdown voltage can be achieved more effectively than in the case where the epitaxial substrate 10 is interposed only for the purpose of increasing the film thickness.

  Further, in the gradient composition layer 6 in which the composition changes continuously and a substantial hetero interface is not formed, electric field concentration that is likely to occur at the hetero interface is less likely to occur. This contributes to high breakdown voltage and low leakage current.

  Furthermore, by forming the channel layer 5a made of GaN, which is a binary mixed crystal, on the gradient composition layer 6, a decrease in electron mobility due to alloy scattering is suppressed, and a low on-resistance characteristic of the nitride HEMT is reduced. Be maintained.

<Epitaxial substrate manufacturing method>
Next, the method for manufacturing the epitaxial substrate 10 will be outlined with reference to the case of using the MOCVD method.

  First, a (111) plane single crystal silicon wafer is prepared as the base substrate 1, and the natural oxide film is removed by dilute hydrofluoric acid cleaning. After that, SPM cleaning is performed, and an oxide film having a thickness of about several mm on the wafer surface. Is formed. This is set in the reactor of the MOCVD apparatus.

Then, each layer is formed under a predetermined heating condition and gas atmosphere. First, the initial layer 3 made of AlN has a substrate temperature maintained at a predetermined initial layer formation temperature of 800 ° C. or higher and 1200 ° C. or lower, and the reactor internal pressure is about 0.1 kPa to 30 kPa. (Trimethylaluminum) Bubbling gas and NH ₃ gas are introduced into the reactor at an appropriate molar flow ratio, and the film formation rate is set to 20 nm / min or more and the target film thickness is set to 200 nm or less. it can.

In addition, after the silicon wafer reaches the initial layer formation temperature, prior to the formation of the initial layer 3, only TMA bubbling gas is introduced into the reactor, and the wafer is exposed to the TMA bubbling gas atmosphere. _An interface layer 2 made of _x O _y N _z is formed.

After the initial layer 3 is formed, the first intermediate layer 4 is formed by maintaining the substrate temperature at a predetermined intermediate layer formation temperature of 800 ° C. or higher and 1200 ° C. or lower, and setting the reactor internal pressure to 0.1 kPa to 100 kPa. the and TMG (trimethylgallium) bubbling gas and TMA bubbling gas and NH ₃ gas as a raw material, is introduced into the reactor at a predetermined flow rate corresponding to the composition of the first intermediate layer 4 to be produced, and NH ₃ This is realized by reacting TMA and TMG.

In the formation of the gradient composition layer 6, following the formation of the first intermediate layer 4, the substrate temperature is maintained at a gradient composition layer formation temperature of 800 ° C. or more and 1200 ° C. or less, and the reactor pressure is 0.1 kPa to 100 kPa. The flow rate ratio between the NH ₃ gas introduced into the reactor and the group III nitride source gas (TMA, TMG bubbling gas) is gradually increased according to the composition change (concentration gradient) to be realized in the gradient composition layer 6. It should be changed to.

The functional layer 5 is formed after the gradient composition layer 6 is formed, with the substrate temperature maintained at a predetermined functional layer forming temperature of 800 ° C. or higher and 1200 ° C. or lower, and the reactor internal pressure set to 0.1 kPa to 100 kPa. At least one of gas, TMA bubbling gas, or TMG bubbling gas and NH ₃ gas are introduced into the reactor at a flow ratio according to the composition of the functional layer 5 to be produced, and NH ₃ and TMI, TMA, and This is realized by reacting with at least one of TMG. As shown in FIG. 1, when the functional layer 5 is composed of a plurality of layers having different compositions, manufacturing conditions corresponding to each layer composition are applied.

  As described above, according to the present embodiment, a silicon substrate that is inexpensive and easily available with a large diameter is used as a base substrate, and an epitaxial substrate that is crack-free and less warped and has excellent crystal quality. Can be obtained. In more detail, after forming an initial layer which has a concavo-convex structure and a multi-defect-containing layer on a silicon substrate, an intermediate layer and other layers (functional layers etc.) are formed, so that the silicon substrate and the intermediate layer are formed. While suppressing the lattice misfit between the intermediate layer and the functional layer, a gradient composition layer in which in-plane compressive stress acts is interposed between the intermediate layer and the functional layer, thereby realizing dislocation reduction and residual stress reduction. Thereby, an epitaxial substrate having a thick epitaxial film is realized. Such thickening improves the pressure resistance of the epitaxial substrate.

  Furthermore, according to the present embodiment, when the epitaxial substrate is configured as a substrate for an electronic device such as a HEMT element, the gradient composition layer itself can be formed so as to have a withstand voltage holding function. The withstand voltage holding function is further superimposed on the withstand voltage improvement effect. As a result, an electronic device having extremely superior pressure resistance compared to the prior art is realized.

<Second Embodiment>
FIG. 5 is a schematic cross-sectional view schematically showing the configuration of the epitaxial substrate 20 according to the second embodiment of the present invention.

  The epitaxial substrate 20 is different from the epitaxial substrate 10 according to the first embodiment in that a plurality of graded composition layers 6 are stacked. Each gradient composition layer 6 is formed in the same manner as in the first embodiment. FIG. 5 illustrates a case where a first unit gradient composition layer 61 and a second unit gradient composition layer 62 are stacked as the plurality of gradient composition layers 6.

  More specifically, on the first intermediate layer 4, the first unit gradient composition layer 61 moves from the boundary portion 61 a with the first intermediate layer 4 toward the boundary portion 61 b with the second unit gradient composition layer 62. It is formed so that the abundance ratio of Al in the group III element is small. On top of that, as the second unit gradient composition layer 62 moves from the boundary portion 62a with the first unit gradient composition layer 61 toward the boundary portion 62b with the functional layer 5, the Al ratio in the group III element decreases. It is formed as follows.

  In the epitaxial substrate 20 having such a configuration, although there is a discontinuity in composition at the interface between the Ga-rich boundary portion 61b and the Al-rich boundary portion 62a, the first unit gradient composition layer 61 is subjected to compressive stress in the plane. Therefore, the second unit graded composition layer 62 is crystal-grown while maintaining alignment with the first unit graded composition layer 61.

  As a result, in the functional layer 5 formed on the second unit gradient composition layer 62, a compressive stress acts as in the functional layer 5 of the epitaxial substrate 10 according to the first embodiment. As a result, the epitaxial substrate 20 has a reduced residual tensile stress as in the epitaxial substrate 10 according to the first embodiment, and the warpage is suppressed.

  In addition, since the total thickness of the epitaxial substrate 20 is larger than that of the epitaxial substrate 10 according to the first embodiment, in an electronic device using the epitaxial substrate 20 than when the epitaxial substrate 10 is used while suppressing warpage. Higher breakdown voltage is realized.

<Third Embodiment>
FIG. 6 is a schematic cross-sectional view schematically showing the configuration of the epitaxial substrate 30 according to the third embodiment of the present invention.

  The epitaxial substrate 30 is different from the epitaxial substrate 10 according to the first embodiment in that the second intermediate layer 7 is provided between the gradient composition layer 6 and the functional layer 5.

  The second intermediate layer 7 is preferably formed of AlN so as to have a thickness of about 1 nm to several tens of nm.

  In the epitaxial substrate 30 having such a configuration, the Al-rich second intermediate layer 7 is formed on the Ga-rich boundary portion 6b of the gradient composition layer 6, so that there is a discontinuity in composition at the interface between the two. However, since the gradient composition layer 6 is formed in such a manner that compressive stress acts in the plane, the second intermediate layer 7 is formed by crystal growth while maintaining alignment with the gradient composition layer 6.

  As a result, in the functional layer 5 formed on the second intermediate layer 7, a strong compressive stress acts as in the epitaxial substrate 10 according to the first embodiment. As a result, the epitaxial substrate 30 has a lower residual tensile stress than that of the epitaxial substrate 10 according to the first embodiment, and warpage is further suppressed as compared with the epitaxial substrate 10.

<Fourth embodiment>
FIG. 7 is a schematic cross-sectional view schematically showing a configuration of an epitaxial substrate 40 according to the fourth embodiment of the present invention.

  The epitaxial substrate 40 is different from the epitaxial substrate 10 according to the first embodiment in that a superlattice structure layer 8 is provided between the first intermediate layer 4 and the graded composition layer 6.

  The superlattice structure layer 8 is formed by repeatedly laminating first unit layers 8a and second unit layers 8b, which are two types of group III nitride layers having different compositions. Here, a set of one first unit layer 8a and one second unit layer 8b is also referred to as a pair layer.

  The superlattice structure layer 8 further relaxes the strain generated in the in-plane direction of the first intermediate layer 4 due to the difference in expansion coefficient between the single crystal silicon wafer as the base substrate 1 and the group III nitride, and the gradient composition layer 6 has an effect of further suppressing the propagation of strain to 6.

  The epitaxial substrate 40 including the superlattice structure layer 8 has a higher breakdown voltage than the epitaxial substrate 10 because the total thickness of the epitaxial film is larger than that of the epitaxial substrate 10 according to the first embodiment. Become.

  Even when the superlattice structure layer 8 is interposed, the crystal quality of the gradient composition layer 6 and the functional layer 5 is sufficiently good (provided that the superlattice structure layer 8 is present) if the formation conditions are set appropriately. To the same extent as if not).

  The superlattice structure layer 8 is a preferred example in which the first unit layer 8a is formed of GaN to a thickness of about several tens of nm, and the second unit layer 8b is formed of AlN to a thickness of about several nm. .

  The gradient composition layer 6 and the functional layer 5 are formed by releasing the strain inherent in the first intermediate layer 4 more sufficiently than in the first embodiment by repeating the formation of the pair layers. Thus, in the epitaxial substrate 40, the occurrence of cracks and warpage due to the difference in thermal expansion coefficient between the base substrate 1 and the group III nitride layer group is further preferably suppressed. In other words, it can be said that the superlattice structure layer 8 has a strain relaxation capability for relaxing the propagation of strain to the gradient composition layer 6 and the functional layer 5 in the epitaxial substrate 10. In addition, since the total thickness of the epitaxial substrate 40 is larger than that of the epitaxial substrate 10 according to the first embodiment, in an electronic device using the epitaxial substrate 40, the epitaxial substrate 10 is used while suppressing warpage. Higher breakdown voltage is realized.

<Modification>
In each of the above-described embodiments, the graded composition layer 6 exhibits n-type conductivity depending on the residual donor. A mode in which the graded composition layer 6 is increased in resistance by compensating doping the acceptor element at the time of formation. It may be. For example, it is a preferable example to dope Mg of about 1 × 10 ¹⁸ / cm ³ to (1 × 10 ²⁰ / cm ^3. If an epitaxial substrate is formed by MOCVD, Mg doping is This is realized by using Cp ₂ Mg bubbling gas as a raw material gas.

  When an epitaxial substrate in which the graded composition layer 6 is doped with an acceptor element is used for forming a Schottky barrier diode, the reverse leakage current is further reduced.

Further, a donor element may be doped when the first intermediate layer 4 is formed. For example, it is a preferable example to dope Si of about 1 × 10 ¹⁶ / cm ³ to 1 × 10 ¹⁷ / cm ³ . In the case of forming an epitaxial substrate by MOCVD, Si doping is realized by using SiH ₄ bubbling gas as a source gas.

  When an epitaxial substrate in which the first intermediate layer 4 is doped with a donor element is used to form a Schottky barrier diode, the end of the depletion layer extending from the Schottky electrode is applied to the gradient composition layer 6 when a voltage is applied. Can do. That is, extension of the depletion layer to the base substrate 1 (so-called punch through) is prevented. Thereby, the voltage resistance of the Schottky barrier diode is further improved.

(Example 1, Comparative Example 1, and Comparative Example 2)
As Example 1, five types of epitaxial substrates 10 (samples a-1 to a-) having different formation conditions of the gradient composition layer 6 represented by the composition formula of Al _q Ga _1-q N (0 ≦ q ≦ 1) were used. 5) was produced. Moreover, as Comparative Example 1, two types of epitaxial substrates (samples b-1 to b-2) not including the gradient composition layer 6 were produced. Further, as Comparative Example 2, a layer whose composition changes in a staircase shape (although not represented by the composition formula Al _q Ga _1-q N (0 ≦ q ≦ 1)) instead of the graded composition layer 6 (not shown) Except for providing a continuous composition layer), two types of epitaxial substrates (samples c-1 to c-2) were prepared in the same procedure as in Example 1. However, the formation of the interface layer 2 was omitted in any sample.

  The formation up to the first intermediate layer 4 was performed in the same procedure for each sample. First, as the base substrate 1, a (111) plane single crystal silicon wafer (hereinafter referred to as silicon wafer) having a diameter of 4 inches and a substrate thickness of 525 μm was prepared. The prepared silicon wafer was washed with dilute hydrofluoric acid with a composition of hydrofluoric acid / pure water = 1/10 (volume ratio) and sulfuric acid / hydrogen peroxide solution = 1/1 (volume ratio). An SPM cleaning with a cleaning liquid was performed to form an oxide film having a thickness of several millimeters on the wafer surface, which was set in the reactor of the MOCVD apparatus. Next, the reactor was heated to a hydrogen / nitrogen mixed atmosphere, the reactor pressure was set to 15 kPa, and the substrate temperature was heated to 1100 ° C., which is the initial layer formation temperature.

When the substrate temperature reached 1100 ° C., NH ₃ gas was introduced into the reactor, and the substrate surface was exposed to an NH ₃ gas atmosphere for 1 minute.

Thereafter, TMA bubbling gas was introduced into the reactor at a predetermined flow ratio, and NH ₃ and TMA were reacted to form an initial layer 3 having a three-dimensional uneven shape on the surface. At that time, the growth rate (deposition rate) of the initial layer 3 was 20 nm / min, and the target average film thickness of the initial layer 3 was 100 nm.

When the initial layer 3 is formed, subsequently, the substrate temperature is set to 1100 ° C., the pressure in the reactor is set to 15 kPa, TMG bubbling gas is further introduced into the reactor, and the reaction between NH ₃ , TMA, and TMG results in the first An Al _0.3 Ga _0.7 N layer as the intermediate layer 4 was formed so as to have an average film thickness of about 50 nm.

In addition, as a result of conducting the structural analysis by the TEM (transmission electron microscope) and HAADF (high angle scattering electron) image about the sample which performed the above process, the AlN layer which is the initial layer 3 has a three-dimensional uneven surface shape. It was confirmed that it was deposited in the mode. The density of the convex portion 3a is that 1 × ¹⁰ 10 / cm ² or so, the average interval of the convex portions 3a was confirmed to be about 100 nm. When the half width of the X-ray rocking curve of the AlN layer was measured, it was about 0.8 degrees (2870 sec) for both the (0002) plane and the (10-10) plane.

When the dislocation density of the Al _0.3 Ga _0.7 N layer was evaluated, the average value of the entire layer was about 1 × 10 ¹¹ / cm ² (the screw dislocation was about 1 × 10 ¹⁰ / cm ² ). However, on the surface of the Al _0.3 Ga _0.7 N layer, it was about 1 × 10 ¹⁰ / cm ² (the screw dislocation was about 2 × 10 ⁹ / cm ² ). That is, it was confirmed that many dislocations were coalesced and disappeared during the growth process of the AlGaN film.

  When the first intermediate layer 4 is formed, for the samples according to Example 1 and Comparative Example 2, the gradient composition layer 6 or the discontinuous composition layer is set by setting the substrate temperature to 1100 ° C. and the reactor pressure to 15 kPa. Was formed to a thickness of 2 μm. FIG. 8 shows the relationship between the position in the thickness direction of the gradient composition layer 6 and the AlN mole fraction, that is, the concentration gradient, for each sample of Example 1 and Comparative Example 2. The AlN mole fraction for each sample shown in FIG. 8 is a value obtained by performing EDS (energy dispersive X-ray spectroscopic analysis) spot analysis when observing the sample cross section with TEM.

As shown in FIG. 8, the composition of the boundary portion between the graded composition layer and the first intermediate layer 4 was AlN except for the sample a-5. Only sample a-5 was Al _0.8 Ga _0.2 N. On the other hand, the composition of the boundary portion with the functional layer 5 was made to be GaN in any sample. The maximum composition change rates of samples a-1 to a-5 and b-1 to b-2 are about 0.05% / nm, about 0.1% / nm, and about 0.13% / nm, respectively. , About 0.13% / nm, about 0.04% / nm, about 0.98% / nm, and about 0.6% / nm.

For the samples according to Example 1 and Comparative Example 2, the substrate temperature was set to 1100 ° C. immediately after the formation of the gradient composition layer 6 or the discontinuous composition layer, and immediately after the formation of the first intermediate layer 4 for the sample according to Comparative Example 1. The reactor internal pressure was set to 30 kPa, and TMG and NH ₃ were reacted to form a GaN layer as the functional layer 5. The GaN layer was formed to a thickness of 800 nm only for sample b-2, and to a thickness of 1 μm for the other samples. As a result, an epitaxial substrate was obtained.

  The obtained GaN layer of the epitaxial substrate was evaluated for the presence or absence of surface cracks and measured for the dislocation density. The amount of warpage of the epitaxial substrate was also measured. The amount of warpage of the epitaxial substrate was measured with a laser displacement meter.

  FIG. 9 shows a list of the total thickness of the epitaxial films in the obtained epitaxial substrate and the results of the above evaluation. As shown in FIG. 9, in samples b-1 and c-1, cracks were observed on the surface of the GaN layer (that is, the surface of the epitaxial film), but samples a-1 to a with the gradient composition layer 6 were observed. In -5, no crack was observed. Further, the samples a-1 to a-5 provided with the gradient composition layer 6 were less warped than the samples b-1, b-2, c-1, and c-2 not provided with this. This result indicates that the provision of the gradient composition layer 6 is effective for suppressing cracks and reducing warpage of the epitaxial substrate.

  In Comparative Example 1 and Comparative Example 2, the sample in which the crack was generated had a smaller warp than the sample in which no crack was generated. This is because the stress was released to some extent by the generation of the crack. It is understood that.

The dislocation density of the GaN layer is about 1 × 10 ⁹ / cm ^{2 in} the samples a-1 to a-5 including the gradient composition layer 6, and the samples b-1 and b− not including the gradient composition layer 6 are used. A small value of about 1/4 to 1/5 of 2, c-1, and c-2 is obtained. This result indicates that providing the graded composition layer 6 is effective in reducing the dislocation of the epitaxial film.

  Next, except for samples b-1 and c-1 in which cracks were generated in the GaN layer, a Pt electrode was formed as an anode electrode on the GaN layer on each epitaxial substrate by a photolithography process, and Ti / An Al ohmic electrode was formed to obtain a concentric Schottky barrier diode with an electrode spacing of 10 μm. With respect to such a Schottky barrier diode, with the silicon wafer and the cathode electrode both grounded, the reverse current-voltage characteristics include a leakage current at an applied voltage of 100 V and a withstand voltage that is a voltage that causes the diode element to break down. evaluated. These evaluation results are also shown in FIG.

  As shown in FIG. 9, the leakage currents of Sample a-1 to Sample a-5 including the graded composition layer 6 were about 1/100 that of Sample c-2 according to Comparative Example 2. This can be said to be an effect of lowering the dislocation of the epitaxial film described above.

  In terms of the withstand voltage, the samples a-1 to a-5 including the graded composition layer 6 have a high withstand voltage of 900 V or higher, while the total composition is the same. The withstand voltage of the sample c-2 according to the comparative example 2 including the discontinuous composition layer instead of the layer 6 remained at 620V. Moreover, the withstand voltage value of Sample b-2 according to Comparative Example 1 having a small total film thickness was 180 V, which is even smaller. The results show that it is effective to increase the withstand voltage by increasing the thickness with the graded composition layer 6 having a withstand voltage holding function as well as simply increasing the total film thickness.

  From the comparison of Example 1, Comparative Example 1 and Comparative Example 2 described above, the use of an epitaxial substrate having a graded composition layer reduces the leakage current and increases the withstand voltage, which is the reverse direction of the Schottky barrier diode. It can be said that it is effective in improving the characteristics.

(Example 2)
Ten types of epitaxial substrates (samples d-1 to d-10) were prepared in the same procedure as in Example 1, except that the thicknesses of the GaN layers as the gradient composition layer 6 and the functional layer 5 were variously changed. The composition change rate in the gradient composition layer 6 was set to about 0.05% / nm, which is the same as that of the sample a-1 in Example 1. For samples d-1 to d-7, the thicknesses of the gradient composition layer 6 and the functional layer 5 satisfy the relationship of the formula (1).

  The obtained GaN layer of the epitaxial substrate was evaluated for the presence or absence of surface cracks and measured for the dislocation density. The amount of warpage of the epitaxial substrate was also measured.

  Further, for those in which no cracks occurred on the surface, concentric Schottky barrier diodes were produced in the same manner as in Example 1. For such a Schottky barrier diode, the leakage current and the withstand voltage at an applied voltage of 100 V were evaluated in the same manner as in Example 1.

  FIG. 10 is a table showing a list of the film thickness of the gradient composition layer 6, the film thickness of the functional layer, the total film thickness of the epitaxial film, and the evaluation results for each sample. In FIG. 10, values for the sample a-1 are also shown.

  As shown in FIG. 10, cracks did not occur in the samples d-1 to d-7 satisfying the equation (1), but cracks were not generated in the samples d-8 to d-10 not satisfying the equation (1). Had occurred.

  On the other hand, the amount of warpage of the epitaxial substrate was smaller than that of Comparative Example 1 even in the sample d-1 having the largest value, and was almost equal to or less than that of Example 1. This result also indicates that the warpage of the epitaxial substrate is suppressed by providing the gradient composition layer 6, as in Example 1.

  The dislocation density of the GaN layer varies depending on the thickness of the gradient composition layer 6, and samples d-1 to d-5 and d-8 to d-10 in which the thickness of the gradient composition layer 6 is 1 μm or more have the thickness. The dislocation density was smaller than those of samples d-6 to d-7 of less than 1 μm. This is a result showing that dislocations propagated to the gradient composition layer 6 and further to the GaN layer disappear as the gradient composition layer 6 is formed thicker. Correspondingly, Samples d-1 to d-5 had smaller leakage current values in the Schottky barrier diodes than Samples d-6 to d-7. The above results are based on Equation (1) and by forming the graded composition layer 6 to a thickness of 1 μm or more, low dislocation of the epitaxial film and suppression of leakage current in the Schottky barrier diode are realized. Which indicates that.

  Furthermore, it can be seen from FIG. 10 that, by satisfying the formula (1) and setting the thickness of the gradient composition layer to 4 μm or more, a higher withstand voltage of 1300 V or higher than that of Example 1 is realized.

(Comparative Example 3)
As Comparative Example 3, an epitaxial substrate using a SiC wafer as a base substrate was produced.

  Specifically, first, a 4-inch single crystal 6H—SiC wafer having n-type conductivity of (111) plane was prepared as a base substrate. The prepared SiC substrate was set in the reactor of the MOCVD apparatus. Next, the SiC wafer was heated until the inside of the reactor was a hydrogen / nitrogen mixed atmosphere, the reactor pressure was 15 kPa, and the substrate temperature was 1100 ° C., which is the buffer layer formation temperature.

When the substrate temperature reached 1100 ° C., NH ₃ gas and TMA bubbling gas were introduced into the reactor, and an AlN layer having a thickness of about 200 nm was formed as a so-called buffer layer.

When the buffer layer made of AlN was formed, the substrate temperature was set to 1100 ° C., the reactor internal pressure was set to 30 kPa, and TMG and NH ₃ were reacted to form a GaN layer corresponding to the functional layer with a thickness of 3 μm. As a result, an epitaxial substrate was obtained. No cracks were confirmed on the epitaxial substrate. The total film thickness of the produced epitaxial substrate was 3.2 μm.

Subsequently, using the obtained epitaxial substrate, a Schottky barrier diode element was produced in the same procedure as in Example 1, and the leakage current and withstand voltage were measured. As a result, the reverse leakage current at an applied voltage of 100 V was 1 × 10 ⁻⁶ A / cm ² , and the withstand voltage was 885 V.

(Comparison between Comparative Example 3 and Example 1)
When comparing the evaluation result of the epitaxial substrate according to Example 1 shown in FIG. 9 with the evaluation result of the epitaxial substrate according to Comparative Example 3 described above, the epitaxial substrate according to Example 1 is different from the epitaxial substrate according to Comparative Example 3 as follows. It is clear that they have equivalent or better characteristics. In particular, the Schottky barrier diode using the epitaxial substrate according to Example 1 has a higher withstand voltage despite the fact that the total film thickness of the both is substantially the same. This result shows that an epitaxial substrate with better characteristics can be provided by using a Si wafer that is cheaper than a SiC wafer.

In Example 1, the graded composition layer 6 is formed of a group III nitride of Al _q Ga _1-q N having a larger band gap and higher dielectric breakdown strength than the functional layer made of GaN formed immediately above. Therefore, the fact that there is a large difference in the withstand voltage even though there is almost no difference in the total film thickness of the epitaxial film means that the withstand voltage holding function of the graded composition layer 6 itself contributes to the high withstand voltage. It can be said that it points to being.

(Example 3 and Comparative Example 4)
As Example 3, until the formation of the GaN layer, it was performed in the same manner as the sample a-1 of Example 1, and then TMA, TMG, and NH ₃ were placed in the reactor at a substrate temperature of 1100 ° C. and a reactor pressure of 10 kPa. Then, an Al _0.2 Ga _0.8 N layer as a barrier layer was formed to a thickness of 25 nm.

Further, as Comparative Example 4, the process up to the formation of the GaN layer was performed in the same manner as in Comparative Example 3, and subsequently, TMA, TMG, and NH ₃ were introduced into the reactor at a substrate temperature of 1100 ° C. and a reactor pressure of 10 kPa. An Al _0.2 Ga _0.8 N layer as a barrier layer was formed to a thickness of 25 nm.

When the electron mobility and the two-dimensional electron density were measured for the AlGaN / GaN laminated structure of each epitaxial substrate manufactured by the above procedure, the electron mobility of the epitaxial substrate was about 1500 cm ² / Vs in both cases. The two-dimensional electron density was about 1 × 10 ¹³ / cm ² . This result indicates that the epitaxial substrate according to Example 3 using the Si wafer as the base substrate has the same characteristics as the epitaxial substrate according to Comparative Example 4 using the SiC wafer as the base substrate.

(Example 4)
As Example 4, the sample a of Example 1 was used except that a bubbling gas of Cp ₂ Mg was introduced during the formation of the gradient composition layer 6 so that the Mg concentration per unit volume was about 10 ¹⁸ / cm ^3. The epitaxial substrate was produced similarly to -1. Further, a Schottky barrier diode was produced in the same manner as in Example 1.

When the reverse direction characteristics of the manufactured Schottky barrier diode element were evaluated, the withstand voltage was 975 V, which was about the same as that of each sample of Example 1, but the reverse leakage current was 2 × smaller than that of the sample a-1. A value of 10 ⁻⁷ A / cm ² was obtained. This result can be said to indicate that Mg doping has an effect of increasing the specific resistance of the gradient composition layer showing the n-type conductive layer by the residual donor.

(Example 5)
As Example 5, as Si concentration per unit volume in the _Al 0.3 _{Ga 0.7} N layer as a first intermediate layer, a 7 × ¹⁰ 16 / cm ³ _{approximately,} Al 0.3 _{Ga 0.} An epitaxial substrate was produced in the same manner as the sample a-1 in Example 1 except that SiH ₄ gas was introduced during the formation of the ₇ N layer. Further, a Schottky barrier diode was produced in the same manner as in Example 1.

When the reverse characteristics of the manufactured Schottky barrier diode element were evaluated, the reverse leakage current was 1 × 10 ⁻⁶ A / cm ² which was comparable to that in Example 1, but the withstand voltage was higher than that in Example 1. A value of 1025 V was also obtained. This result shows that doping the first intermediate layer with a donor element prevents punch-through of the depletion layer extending from the Schottky electrode when a voltage is applied to the Si base substrate, and the gradient composition layer exhibiting an n-type conductivity type. It shows that there is an effect of keeping the edge of the depletion layer inside.

(Example 6)
In Example 6, an epitaxial substrate according to the second embodiment was produced. Specifically, after the formation of the gradient composition layer 6 was repeated twice in the same manner as the sample a-1 in Example 1, a GaN layer as a functional layer was formed thereon with a thickness of 1 μm, as in Example 1. Formed. The total film thickness of the obtained epitaxial substrate was 5.15 μm.

Similar to Example 1, the obtained epitaxial substrate was evaluated for the presence or absence of surface cracks and measured for the dislocation density. The amount of warpage of the epitaxial substrate was also measured. As a result, no cracks were observed. The amount of warpage was 67 μm, and a value smaller than that of Comparative Example 1 was obtained. The dislocation density of the GaN layer was 1 × 10 ⁹ / cm ² .

Further, a Schottky barrier diode was produced in the same procedure as in Example 1, and the leakage current and withstand voltage were measured. As a result, the reverse leakage current at an applied voltage of 100 V was 1 × 10 ⁻⁶ A / cm ² , which was similar to that in Example 1, but the withstand voltage was higher than that of the epitaxial substrate according to Example 1. A value of 1660V was obtained. The results show that by forming a plurality of graded composition layers 6, it is possible to increase the total film thickness while suppressing the warpage of the wafer, thereby greatly improving the withstand voltage. .

(Example 7)
In Example 7, three types of epitaxial substrates having different thicknesses of the AlN layer as the second intermediate layer 7 were produced as the epitaxial substrates according to the third embodiment. The target film thickness of the AlN layer was set to 5, 10, and 20 nm, respectively. Specifically, the process up to the formation of the gradient composition layer 6 is performed in the same manner as in Example 1. Subsequently, an AlN layer having a target film thickness is formed, and then a GaN layer as a functional layer is formed thereon with a thickness of 1 μm. did. The total thickness of the produced epitaxial substrate was around 3.15 μm.

For the GaN layers of the obtained three types of epitaxial substrates, evaluation of the presence or absence of surface cracks and measurement of dislocation density were performed in the same manner as in Example 1. The amount of warpage of the epitaxial substrate was also measured. As a result, no cracks were observed in any of the three types of epitaxial substrates. Further, the amounts of warpage were 42, 43, and 42 μm, respectively, which were substantially the same regardless of the thickness of the second intermediate layer 7, but all values were smaller than in Example 1. The dislocation density of the GaN layer was 1 × 10 ⁹ / cm ² , which was almost the same as in Example 1.

  Subsequently, using the obtained epitaxial substrate, a Schottky barrier diode element was produced in the same procedure as in Example 1, and the leakage current and withstand voltage were measured.

As a result, the reverse leakage current at an applied voltage of 100 V was 1 × 10 ⁻⁶ A / cm ² which was the same as that in Example 1 for any sample. The withstand voltages were 980 V, 975 V, and 977 V, respectively, which were almost the same as those in Example 1 regardless of the thickness of the second intermediate layer. The result shows that the warpage of the epitaxial substrate can be further suppressed without changing the characteristics by inserting the second intermediate layer between the gradient composition layer and the functional layer.

(Example 8)
In Example 8, an epitaxial substrate according to the fourth embodiment was produced. Specifically, after the first intermediate layer 4 is formed in the same manner as in Example 1, a pair layer in which the first unit layer 8a is a GaN layer and the second unit layer 8b is an AlN layer is subsequently formed. The superlattice structure layer 8 was formed by forming 40 periods. At that time, the target film thickness of the AlN layer was 5 nm, and the target film thickness of the GaN layer was 20 nm. The thickness of the obtained superlattice structure layer was 1 μm. On the periodic structure layer, a gradient composition layer 6 and a GaN layer as the functional layer 5 were formed in the same manner as the sample a-1 of Example 1. The total film thickness of the obtained epitaxial substrate was 4.15 μm.

The GaN layer of the obtained epitaxial substrate was evaluated for the presence or absence of surface cracks and the measurement of dislocation density in the same manner as in Example 1. The amount of warpage of the epitaxial substrate was also measured. As a result, no cracks were observed. The amount of warpage of the epitaxial substrate was 62 μm, and a value smaller than that of Comparative Example 1 was obtained. The dislocation density of the GaN layer was 1 × 10 ⁹ / cm ² .

Subsequently, using the obtained epitaxial substrate, a Schottky barrier diode element was produced in the same procedure as in Example 1, and the leakage current and withstand voltage were measured. As a result, the reverse leakage current at an applied voltage of 100 V was 1 × 10 ⁻⁶ A / cm ² , which was similar to that in Example 1, but the withstand voltage was higher than that of the epitaxial substrate according to Example 1. 1180V. Such a result shows that by forming the superlattice structure layer, the total film thickness can be increased while suppressing the warpage of the wafer, whereby the withstand voltage can be greatly improved.

DESCRIPTION OF SYMBOLS 1 Base substrate 2 Interface layer 3 Initial layer 3a Convex part 4 1st intermediate | middle layer 5 Functional layer 5a Channel layer 5b Spacer layer 5c Barrier layer 6 Gradient composition layer 6a Boundary part 6b (with the intermediate layer 4 of the gradient composition layer 6) Boundary portion of gradient composition layer 6 with functional layer 5 7 Second intermediate layer 8 Superlattice structure layer 8a First unit layer 8b Second unit layer 10, 20, 30, 40 Epitaxial substrate

Claims (31)

A semiconductor element formed by forming a group III nitride layer group on a base substrate made of single crystal silicon of (111) orientation so that the (0001) crystal plane is substantially parallel to the substrate surface of the base substrate An epitaxial substrate for
A first group III nitride layer made of AlN formed on the base substrate;
A second group III nitride layer formed on the first group III nitride layer and made of Al _p Ga _1-p N (0 ≦ p <1);
A third group III nitride layer epitaxially formed on the second group III nitride layer and represented by a composition formula of Al _q Ga _1-q N (0 ≦ q ≦ 1);
At least one fourth group III nitride layer epitaxially formed on the third group III nitride layer;
With
The first group III nitride layer is composed of at least one of columnar or granular crystals or domains, and is a polycrystalline defect-containing layer having an average film thickness of 40 nm or more and 200 nm or less,
An interface between the first group III nitride layer and the second group III nitride layer is a three-dimensional uneven surface;
At the interface, the convex portion of the first group III nitride layer in which the (10-11) plane or the (10-12) plane of AlN forms a side wall is 5 × 10 ⁹ / cm ² or more and 5 × 10 ^10. / Cm ² or less and an average interval of 45 nm or more and 140 nm or less,
The group III element as the third group III nitride layer moves from the first boundary part with the second group III nitride layer toward the second boundary part with the fourth group III nitride layer It is formed as a gradient composition layer in which the abundance ratio of Al is continuously reduced,
An epitaxial substrate for a semiconductor device, characterized in that: An epitaxial substrate for a semiconductor device according to claim 1,
An epitaxial substrate for a semiconductor element, wherein the rate of change of the Al abundance ratio in the third group III nitride layer is 0.13% / nm or less. An epitaxial substrate for a semiconductor device according to claim 1 or 2, wherein
When the thickness of the third group III nitride layer is t1 (nm) and the thickness of the fourth group III nitride is t2 (nm),
t2 ≦ 40e ^0.0017t1
An epitaxial substrate for a semiconductor device, characterized in that: An epitaxial substrate for a semiconductor device according to any one of claims 1 to 3,
An epitaxial substrate for a semiconductor device, wherein a thickness of the third group III nitride layer is 1 μm or more and 3 μm or less. An epitaxial substrate for a semiconductor device according to any one of claims 1 to 4,
The fourth group III nitride layer includes a layer made of GaN as a layer adjacent to the third group III nitride layer;
The second boundary portion of the third group III nitride layer is made of GaN;
An epitaxial substrate for a semiconductor device, characterized in that: An epitaxial substrate for a semiconductor device according to any one of claims 1 to 5,
When q = qa at the first boundary portion of the third group III nitride layer, 0.8 ≦ qa ≦ 1;
An epitaxial substrate for a semiconductor device, characterized in that: An epitaxial substrate for a semiconductor device according to claim 6,
The first boundary portion of the third group III nitride layer is made of AlN;
An epitaxial substrate for a semiconductor device, characterized in that: An epitaxial substrate for a semiconductor device according to any one of claims 1 to 7,
A plurality of the third group III nitride layers are laminated.
An epitaxial substrate for a semiconductor device, characterized in that: An epitaxial substrate for a semiconductor device according to any one of claims 1 to 7,
A layer made of AlN is further provided between the third group III nitride layer and the fourth group III nitride layer;
An epitaxial substrate for a semiconductor device, characterized in that: An epitaxial substrate for a semiconductor device according to any one of claims 1 to 7,
A superlattice structure layer in which two or more types of group III nitride layers having different compositions are periodically stacked is further provided between the second group III nitride layer and the third group III nitride layer. ,
An epitaxial substrate for a semiconductor device, characterized in that: An epitaxial substrate for a semiconductor device according to any one of claims 1 to 10,
An epitaxial substrate for a semiconductor device, wherein the third group III nitride layer is doped with an acceptor element. An epitaxial substrate for a semiconductor device according to claim 11,
An epitaxial substrate for a semiconductor device, wherein the acceptor element is Mg. An epitaxial substrate for a semiconductor device according to any one of claims 1 to 12,
An epitaxial substrate for a semiconductor device, wherein the second group III nitride layer is doped with a donor element. An epitaxial substrate for a semiconductor device according to claim 13,
An epitaxial substrate for a semiconductor device, wherein the donor element is Si.   A semiconductor device manufactured using the epitaxial substrate according to claim 1. An epitaxial substrate for a semiconductor device, in which a group III nitride layer group having a (0001) crystal plane substantially parallel to the substrate surface of the base substrate is formed on a base substrate that is single crystal silicon of (111) orientation A manufacturing method comprising:
A first forming step of forming a first group III nitride layer made of AlN on the base substrate;
A second forming step of forming a second group III nitride layer made of Al _p Ga _1-p N (0 ≦ p <1) on the second group III nitride layer;
A third forming step of epitaxially forming a third group III nitride layer represented by a composition formula of Al _q Ga _1-q N (0 ≦ q ≦ 1) on the second group III nitride layer; ,
A fourth forming step of epitaxially forming at least one fourth group III nitride layer on the third group III nitride layer;
With
In the first formation step, the first group III nitride layer is composed of at least one of columnar or granular crystals or domains, the surface is a three-dimensional uneven surface, and the average film thickness is 40 nm or more and 200 nm. It is the following polycrystalline defect-containing layer, and on the surface, the convex portion of which the (10-11) plane or the (10-12) plane of AlN forms a side wall is 5 × 10 ⁹ / cm ² or more and 5 × 10 5 Formed so as to exist at a density of ¹⁰ / cm ² or less and an average interval of 45 nm or more and 140 nm or less,
In the third formation step, the third group III nitride layer is moved from the first boundary portion with the second group III nitride layer to the second group III nitride layer. Forming as a graded composition layer in which the abundance ratio of Al in the group III element continuously decreases toward the boundary part,
A method for producing an epitaxial substrate for a semiconductor device, comprising: A method for producing an epitaxial substrate for a semiconductor device according to claim 16,
In the third formation step, the third group III nitride layer is formed so that the rate of change of the Al abundance ratio is 0.13% / nm or less. Production method. A method for producing an epitaxial substrate for a semiconductor device according to claim 16 or 17,
When the thickness of the third group III nitride layer is t1 (nm) and the thickness of the fourth group III nitride is t2 (nm),
t2 ≦ 40e ^0.0017t1
The third group III nitride layer and the fourth group III nitride layer are formed so as to satisfy the following: A method for manufacturing an epitaxial substrate for a semiconductor device. A method for manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 18, comprising:
In the third forming step, the third group III nitride layer is formed to a thickness of 1 μm or more and 3 μm or less. A method for manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 19,
In the third formation step, the second boundary portion of the third group III nitride layer is formed of GaN,
In the fourth formation step, a layer adjacent to the third group III nitride layer is formed of GaN.
A method for producing an epitaxial substrate for a semiconductor device, comprising: A method for manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 20,
In the third formation step, when q = qa at the first boundary portion of the third group III nitride layer, the third group III nitride is set such that 0.8 ≦ qa ≦ 1. Forming a physical layer,
A method for producing an epitaxial substrate for a semiconductor device, comprising: It is a manufacturing method of the epitaxial substrate for semiconductor devices according to claim 21,
In the third formation step, the first boundary portion of the third group III nitride layer is formed of AlN.
A method for producing an epitaxial substrate for a semiconductor device, comprising: A method for manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 22,
In the third formation step, a plurality of the third group III nitride layers are stacked.
A method for producing an epitaxial substrate for a semiconductor device, comprising: A method for manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 22,
After the third forming step, a layer made of AlN is formed on the third group III nitride layer, and in the fourth forming step, the fourth group III is formed on the layer made of AlN. Forming a nitride layer,
A method for producing an epitaxial substrate for a semiconductor device, comprising: A method for manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 22,
After the second forming step, a superlattice structure layer in which two or more types of group III nitride layers having different compositions are periodically stacked is formed on the second group III nitride layer;
In the third formation step, the third group III nitride layer is formed on the superlattice structure layer.
A method for producing an epitaxial substrate for a semiconductor device, comprising: A method for manufacturing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 25, wherein:
In the third formation step, the third group III nitride layer is formed while doping an acceptor element. It is a manufacturing method of the epitaxial substrate for semiconductor elements according to claim 26,
The method of manufacturing an epitaxial substrate for a semiconductor device, wherein the acceptor element is Mg. A method for producing an epitaxial substrate for a semiconductor device according to any one of claims 16 to 27, wherein:
In the second forming step, the second group III nitride layer is formed while doping with a donor element. A method for producing an epitaxial substrate for a semiconductor device according to claim 28, comprising:
The method for producing an epitaxial substrate for a semiconductor device, wherein the donor element is Si.   30. An epitaxial substrate for a semiconductor device, produced by using the method for producing an epitaxial substrate according to any one of claims 16 to 29.   A semiconductor device comprising an epitaxial substrate for a semiconductor device manufactured using the method for manufacturing an epitaxial substrate according to any one of claims 16 to 29.