JP6142893B2 - Compound semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a compound semiconductor device and a manufacturing method thereof.

  In recent years, development of electronic devices (compound semiconductor devices) in which a GaN layer and an AlGaN layer are sequentially formed on a substrate and the GaN layer is used as an electron transit layer has been active. One of such compound semiconductor devices is a GaN-based high electron mobility transistor (HEMT). When the GaN-based HEMT is used as a switch for an inverter for power supply, both reduction of on-resistance and improvement of breakdown voltage are possible. In addition, power consumption during standby can be reduced as compared with Si-based transistors, and the operating frequency can be improved. For this reason, switching loss can be reduced and the power consumption of the inverter can be reduced. In addition, a transistor having equivalent performance can be downsized as compared with a Si-based transistor.

  In a GaN-based HEMT using a GaN layer as an electron transit layer and using AlGaN as an electron supply layer, strain due to the difference in lattice constant between AlGaN and GaN occurs in AlGaN. For this reason, piezoelectric polarization occurs, and a high-concentration two-dimensional electron gas (2DEG) is obtained. Therefore, this GaN-based HEMT is applied to a high-power device.

  However, it is extremely difficult to manufacture a GaN substrate with good crystallinity. For this reason, conventionally, a GaN layer, an AlGaN layer, and the like are mainly formed by heteroepitaxial growth above the Si substrate, sapphire substrate, and SiC substrate. In particular, a Si substrate having a large diameter and high quality is easily available at low cost. For this reason, research on a structure in which a GaN layer and an AlGaN layer are grown on a Si substrate has been actively conducted.

  However, there is a large difference in thermal expansion coefficient between the GaN layer and AlGaN layer and the Si substrate. On the other hand, high temperature processing is required for epitaxial growth of the GaN layer and the AlGaN layer. For this reason, during this high temperature treatment, warpage, cracks, and the like of the Si substrate due to the difference in thermal expansion coefficient may occur. In order to solve such a problem caused by the difference in thermal expansion coefficient, a buffer layer having a superlattice structure in which two types of compound semiconductor layers having different compositions are alternately stacked between a GaN layer and an AlGaN layer and a Si substrate. Studies are also underway on the technology to provide this.

  However, it is difficult to sufficiently suppress cracks and warpage even with a conventional compound semiconductor device that employs a superlattice structure as a buffer layer. In addition, it becomes difficult to improve the crystallinity of the electron transit layer and the electron supply layer thereon.

  In addition, a technique for forming a layer having a thermal expansion coefficient close to that of the GaN-based compound semiconductor layer on the back surface of the Si substrate has been studied, but in this conventional technique, warping or the like is caused when the layer is formed. Will occur. When such a warp occurs, the substrate temperature at the time of forming the electron transit layer, the electron supply layer, and the like varies, making it difficult to obtain desired characteristics.

JP 2010-228967 A JP 2011-119715 A

  An object of the present invention is to provide a compound semiconductor device capable of suppressing cracks and the like due to differences in thermal expansion coefficients of materials and a method for manufacturing the same.

In one aspect of the compound semiconductor device, a substrate, a nitride semiconductor multilayer structure formed above the substrate, an AlN-based stress relaxation layer provided between the substrate and the nitride semiconductor multilayer structure, A gate electrode, a source electrode, and a drain electrode formed above the nitride semiconductor multilayer structure are provided. The stress on the surface in contact with the nitride semiconductor laminated structure of the relaxed layer, depressions body is formed with a number density of ⁹ × 10 9 cm ^-2 or more or a depth of 15 nm. The skewness of the stress relaxation layer on the surface in contact with the nitride semiconductor multilayer structure is negative.
Another embodiment of the compound semiconductor device includes a substrate, a nitride semiconductor multilayer structure formed above the substrate, and an AlN-based stress relaxation layer provided between the substrate and the nitride semiconductor multilayer structure. And a gate electrode, a source electrode, and a drain electrode formed above the nitride semiconductor multilayer structure. On the surface of the stress relaxation layer in contact with the nitride semiconductor multilayer structure, depressions are formed with a depth of 5 nm or more and a number density of 2 × 10 ¹⁰ cm ⁻² or more, or depressions are 8 with a depth of 7 nm or more. It is formed with a number density of × 10 ⁹ cm ^-2 or more. The skewness of the stress relaxation layer on the surface in contact with the nitride semiconductor multilayer structure is negative, and the diameter of the recess is 80 nm or more.

In one aspect of the method for manufacturing a compound semiconductor device, an AlN-based stress relaxation layer is formed above a substrate, a nitride semiconductor multilayer structure is formed above the stress relaxation layer, and a gate electrode is disposed above the nitride semiconductor multilayer structure. A source electrode and a drain electrode are formed. When the stress relaxation layer is formed, a recess having a depth of 15 nm or more is formed at a number density of 9 × 10 ⁹ cm ⁻² or more on a surface of the stress relaxation layer in contact with the nitride semiconductor multilayer structure, The skewness of the surface is negative.

  According to the above compound semiconductor device and the like, since the stress relaxation layer in which appropriate depressions are formed is provided, it is possible to suppress cracks and the like due to the difference in the thermal expansion coefficients of the materials.

It is a figure which shows the structure of the compound semiconductor device which concerns on 1st Embodiment. It is a figure which shows the effect | action of the compound semiconductor device which concerns on 1st Embodiment. It is a figure which shows the relationship between surface property and skewness Rsk. It is a figure which shows the structure of GaN-type HEMT which concerns on 2nd Embodiment. It is sectional drawing which shows the manufacturing method of GaN-type HEMT which concerns on 2nd Embodiment to process order. It is sectional drawing which shows the modification of 2nd Embodiment. It is a figure which shows the example of the external appearance of a high output amplifier. It is a figure which shows a power supply device. It is a figure which shows the analysis result of the surface property of a stress relaxation layer. It is a figure which shows the relationship between the depth of a hollow, the magnitude | size of curvature, and the length of a crack.

  Hereinafter, embodiments will be described in detail with reference to the accompanying drawings.

(First embodiment)
First, the first embodiment will be described. FIG. 1 is a diagram illustrating the structure of the compound semiconductor device according to the first embodiment.

In the first embodiment, as shown in FIG. 1, a stress relaxation layer 2 is formed on a substrate 1, and a GaN-based compound semiconductor multilayer structure 3 is formed on the stress relaxation layer 2. The substrate 1 is, for example, a Si (111) substrate, the stress relaxation layer 2 is an AlN-based compound semiconductor layer such as an AlN layer, and a depression 2 a having a depth of 5 nm or more is formed on the upper surface of the stress relaxation layer 2. The number density is 2 × 10 ¹⁰ cm ⁻² or more. The compound semiconductor multilayer structure 3 includes, for example, an electron transit layer and an electron supply layer. Further, for example, a gate electrode, a source electrode, and a drain electrode are formed on the electron supply layer so that the source electrode and the drain electrode sandwich the gate electrode therebetween.

  In the conventional technique, an AlN layer may be formed between a substrate and an electron transit layer such as a GaN layer, but the upper surface of this AlN layer is flat. As shown in FIG. 2A, when the AlN layer 102 having a flat top surface is formed instead of the stress relaxation layer 2, the substrate is cooled during the growth of the compound semiconductor multilayer structure 3. A large tensile stress due to the difference in thermal expansion coefficient between 1 and the GaN-based compound semiconductor multilayer structure 3 acts on the compound semiconductor multilayer structure 3. As a result, the compound semiconductor multilayer structure 3 is cracked or the substrate 1 is warped.

  On the other hand, in the present embodiment, since the appropriate recesses 2a are scattered on the upper surface of the stress relaxation layer 2, the growth from the side surfaces of the recesses collides with each other when the compound semiconductor multilayer structure 3 is grown. At this time, compressive stresses are generated from each other. Therefore, compressive stress locally acts on the compound semiconductor multilayer structure 3 in the nitride semiconductor layer grown on the stress relaxation layer 2 having a depression. Therefore, the tensile stress generated at the time of cooling after growth is offset, and the crack of the compound semiconductor multilayer structure 3 and the warp of the substrate 1 are suppressed. Furthermore, in order to obtain such a structure, no particularly complicated control is required, and no special long-time crystal growth is required. For this reason, an increase in cost can also be suppressed.

  Regarding the surface properties of the stress relaxation layer 2, the skewness Rsk of the roughness curve is negative. When the skewness Rsk of the roughness curve is positive, as shown in FIG. 3A, the surface property is such that there are a plurality of protrusions protruding from the reference surface. When the skewness Rsk of the roughness curve is 0, as shown in FIG. 3B, the surface properties are such that protrusions and depressions are present equally. When the skewness Rsk of the roughness curve is negative, as shown in FIG. 3C, there are a plurality of depressions that are recessed from the reference plane.

In addition, the depression 2a having a depth of 5 nm or more is used as the object for counting the number density. The compressive stress hardly occurs in the periphery of the depression having a depth of less than 5 nm, and contributes to the relaxation of the tensile stress. Because it does not. In addition, the number density of the depressions 2a is set to 2 × 10 ¹⁰ cm ⁻² or more because if the number density is less than 2 × 10 ¹⁰ cm ⁻² , the compressive stress is insufficient and sufficient tensile stress is applied. This is because it is difficult to mitigate. As will be described later, in consideration of the results of experiments conducted by the present inventor, it is preferable that the recesses 2a having a depth of 6 nm or more are formed with a number density of 2 × 10 ¹⁰ cm ⁻² or more. Is preferably formed with a number density of 8 × 10 ⁹ cm ⁻² or more, and a depression with a depth of 15 nm or more is formed with a number density of 9 × 10 ⁹ cm ⁻² or more. Even more preferably. Further, if the depth of the recess is determined, the diameter of the recess is substantially determined accordingly. However, in consideration of the results of experiments conducted by the present inventor, the diameter of the recess having a depth of 5 nm or more may be 30 nm or more. Preferably, it is 80 nm or more. The upper limit of the diameter of the dent is not particularly limited as long as the above number density can be secured. In addition, when a hollow is too deep with respect to a diameter, there exists a possibility that a hollow cannot be filled up with the buffer layer formed on it. In addition, the crystallinity of the buffer layer may be disturbed. For this reason, it is preferable that the depth of the dent is 50 nm or less.

(Second Embodiment)
Next, a second embodiment will be described. FIG. 4 is a diagram illustrating a structure of a GaN-based HEMT (compound semiconductor device) according to the second embodiment.

In the second embodiment, as shown in FIG. 4A, for example, a stress relaxation layer 12 having a thickness of about 50 nm to 300 nm (for example, 200 nm) is formed on a Si (111) substrate 11. The stress relaxation layer 12 is an AlN-based compound semiconductor layer such as an AlN layer. On the upper surface of the stress relaxation layer 12, recesses 12a having a depth of 5 nm or more are formed at a number density of 2 × 10 ¹⁰ cm ⁻² or more. ing. On the stress relaxation layer 12, an AlGaN layer 13a having a thickness of about 50 nm to 300 nm (eg, 200 nm), an AlGaN layer 13b having a thickness of about 50 nm to 300 nm (eg, 200 nm), and a thickness of about 50 nm to 300 nm (eg, 200 nm). The buffer layer 13 including the AlGaN layer 13c is formed. The composition of the AlGaN layer 13a is represented by Al _x Ga _1-x N (0 <x ≦ 1), the composition of the AlGaN layer 13b is represented by Al _y Ga _1-y N (0 ≦ y ≦ 1), the composition of the AlGaN layer 13c is represented by _{Al z Ga 1-z N (} 0 ≦ z <1). A relationship of “x>y> z” is established between x, y, and z. For example, the value of x (Al composition of the AlGaN layer 13a) is 0.8, the value of y (Al composition of the AlGaN layer 13b) is 0.5, and the value of z (Al composition of the AlGaN layer 13c) is 0.2. is there.

An electron transit layer 14 is formed on the buffer layer 13, an electron supply layer 15 is formed on the electron transit layer 14, and a protective layer 16 is formed on the electron supply layer 15. As the electron transit layer 14, for example, a GaN layer having a thickness of about 0.5 μm to 1.5 μm (for example, 1 μm) is used. As the electron supply layer 15, for example, an n-type AlGaN layer having a thickness of about 10 nm to 30 nm (for example, 30 nm) is used. The composition of the AlGaN layer is represented by, for example, Al _0.25 Ga _0.75 N. As the protective layer 16, for example, an n-type GaN layer having a thickness of about 2 nm to 15 nm (for example, 10 nm) is used. These n-type AlGaN layers and GaN layers are doped with, for example, Si as an n-type impurity of about 1 × 10 ¹⁸ cm ⁻³ to 1 × 10 ²⁰ cm ⁻³ (for example, 5 × 10 ¹⁸ cm ⁻³ ). .

  A source electrode 17 s and a drain electrode 17 d are formed on the protective layer 16. The source electrode 17s and the drain electrode 17d are in ohmic contact with the protective layer 16. The source electrode 17s and the drain electrode 17d include, for example, a Ti film and an Al film formed thereon. A passivation film 18 covering the source electrode 17s and the drain electrode 17d is also formed on the protective layer 16. For example, a silicon nitride film is formed as the passivation film 18. An opening 18a for a gate electrode is formed in a portion of the passivation film 18 located between the source electrode 17s and the drain electrode 17d. A gate electrode 17g that is in Schottky contact with the protective layer 16 is formed on the passivation film 18 through the opening 18a. The gate electrode 17g includes, for example, a Ni film and an Au film formed thereon. A passivation film 19 is also formed on the passivation film 18 to cover the gate electrode 17g. As the passivation film 19, for example, a silicon nitride film is formed. In the passivation films 18 and 19, openings for connecting external terminals and the like are formed.

  The layout viewed from the front side of the substrate 11 is, for example, as shown in FIG. That is, the planar shape of the gate electrode 17g, the source electrode 17s, and the drain electrode 17d is comb-shaped, and the source electrode 17s and the drain electrode 17d are alternately arranged. A gate electrode 17g is disposed between them. The plurality of gate electrodes 17g are commonly connected by the gate wiring 25g, the plurality of source electrodes 17s are commonly connected by the source wiring 25s, and the plurality of drain electrodes 17d are commonly connected by the drain wiring 25d. By adopting such a multi-finger gate structure, the output can be improved. Note that the cross-sectional view shown in FIG. 4A shows a cross section taken along the line II in FIG. 4B. The active region 30 includes an electron transit layer 14, an electron supply layer 15, a protective layer 16, and the like, and the periphery of the active region 30 is set as an inactive region by ion implantation or mesa etching.

  In the second embodiment configured as described above, high-concentration carriers accompanying piezo polarization are generated at the heterojunction interface between GaN constituting the electron transit layer 14 and AlGaN constituting the electron supply layer 15. . That is, electrons are induced in the vicinity of the interface between the electron transit layer 14 and the electron supply layer 15 due to the piezoelectric effect caused by lattice mismatch.

  Furthermore, in the second embodiment, since appropriate depressions 12 a are scattered on the upper surface of the stress relaxation layer 12, the compound semiconductor multilayer structure including the electron transit layer 14, the electron supply layer 15 and the protective layer 16 is grown. During cooling, compressive stress locally acts on the compound semiconductor multilayer structure in addition to tensile stress. Accordingly, the tensile stress is offset and cracks in the compound semiconductor multilayer structure and warping of the substrate 11 are suppressed.

  Next, a method for manufacturing a GaN-based HEMT (compound semiconductor device) according to the second embodiment will be described. FIG. 5 is a cross-sectional view showing a GaN-based HEMT (compound semiconductor device) manufacturing method according to the second embodiment in the order of steps.

First, as shown in FIG. 5A, a stress relaxation layer 12 is formed on a substrate 11 in which depressions 12a having a depth of 5 nm or more are dispersed at a number density of 2 × 10 ¹⁰ cm ⁻² or more. The stress relaxation layer 12 can be formed by a crystal growth method such as a metal organic vapor phase epitaxy (MOVPE) method or a molecular beam epitaxy (MBE) method. When an AlN layer is formed as the stress relaxation layer 12 by the MOVPE method, for example, trimethylaluminum (TMAl) is used as a raw material for aluminum (Al), and ammonia (NH ₃ ) is used as a raw material for nitrogen (N). For example, the V / III ratio, which is the raw material ratio of TMAl and NH ₃ , is controlled to 50 or more, preferably 100 or more, more preferably 200 or more, the growth temperature is controlled to about 1080 ° C., and the growth rate is controlled to about 500 nm / h. Alternatively, the V / III ratio is controlled to about 10 to 100, the growth temperature is controlled to about 1000 ° C. to 1040 ° C., and the growth rate is controlled to about 500 nm / h. The method for forming the stress relaxation layer 12 is not particularly limited as long as the depressions 12a as described above can be formed with a number density of 2 × 10 ¹⁰ cm ⁻² or more.

After the formation of the stress relaxation layer 12, as shown in FIG. 5B, the buffer layer 13 including the AlGaN layer 13a, the AlGaN layer 13b, and the AlGaN layer 13c is formed on the stress relaxation layer 12. Further, as shown in FIG. 5C, the electron transit layer 14, the electron supply layer 15, and the protective layer 16 are formed on the buffer layer 13. Similar to the stress relaxation layer 12, these compound semiconductor layers can be formed by a crystal growth method such as MOVPE method or MBE method. At this time, for example, trimethylgallium (TMGa) can be used as a gallium (Ga) raw material. Moreover, as a raw material of silicon (Si) contained as n-type impurities, for example, silane (SiH ₄ ) can be used. Then, by selecting the source gas, the stress relaxation layer 12 to the protective layer 16 can be continuously formed.

  In the present embodiment, at least the upper surface of the electron transit layer 14 is flat. If the upper surface of the electron transit layer 14 can be made flat, the buffer layer 13 may be formed with a depression that follows the depression 12a on the upper surface, or the depression that follows the depression 12a does not exist on the upper surface and is formed flat. May be. When the buffer layer 13 or the electron transit layer 14 having a flat surface is formed, for example, the V / III ratio is set to about 20 or less. If crystal growth is performed under such conditions, the movement of Al atoms and N atoms in the growth front is promoted, and the growth surface is flattened.

  After the formation of the protective layer 16, the source electrode 17s and the drain electrode 17d are formed on the protective layer 16 as shown in FIG. In the formation of the source electrode 17s and the drain electrode 17d, a resist pattern that opens a region for forming the source electrode 17s and the drain electrode 17d is formed, Ti and Al are deposited, and then Ti and Al deposited on the resist pattern are formed. Are removed together with the resist pattern. Then, heat treatment is performed at 400 ° C. to 1000 ° C. (for example, 600 ° C.) in a nitrogen atmosphere to establish ohmic contact.

  Next, as shown in FIG. 5D, a passivation film 18 is formed on the protective layer 16 so as to cover the source electrode 17s and the drain electrode 17d. As the passivation film 18, for example, a silicon nitride film is formed by a plasma chemical vapor deposition (CVD) method.

  Thereafter, a resist pattern is formed to open a region where the opening 18a is to be formed. Subsequently, by performing etching using a resist pattern, an opening 18a is formed in the passivation film 18 as shown in FIG. Next, a gate electrode 17g in contact with the protective layer 16 through the opening 18a is formed on the passivation film 18 by a lift-off method. In the formation of the gate electrode 17g, after removing the resist pattern used when forming the opening 18a, a new resist pattern is formed to open the region for forming the gate electrode 17g, and Ni and Au are deposited. Thereafter, Ni and Au attached on the resist pattern are removed together with the resist pattern.

  Thereafter, as shown in FIG. 5D, a passivation film 19 is formed on the passivation film 18 so as to cover the gate electrode 17g. As the passivation film 19, for example, a silicon nitride film is formed by a plasma CVD method.

  Subsequently, a gate wiring 25g that commonly connects the plurality of gate electrodes 17g, a source wiring 25s that commonly connects the plurality of source electrodes 17s, a drain wiring 25d that commonly connects the plurality of drain electrodes 17d, and the like are formed (FIG. 4 (A)). b)). In this way, a GaN-based HEMT having the structure shown in FIG. 4 can be obtained.

  As shown in FIG. 6, the protective layer 16 may be formed with openings for the source electrode 17 s and the drain electrode 17 d so that the source electrode 17 s and the drain electrode 17 d are in contact with the electron supply layer 15. . In this case, with respect to the depth of the opening, a part of the protective layer 16 may be left, or a part of the electron supply layer 15 may be removed. That is, the depth of the opening does not need to match the thickness of the protective layer 16.

  Further, a resistor, a capacitor, and the like may be mounted on the substrate 11 to form a monolithic microwave integrated circuit (MMIC).

  The GaN-based HEMT according to this embodiment can be used as, for example, a high-power amplifier. FIG. 7 shows an example of the appearance of the high-power amplifier. In this example, a source terminal 81s connected to the source electrode is provided on the surface of the package. A gate terminal 81g connected to the gate electrode and a drain terminal 81d connected to the drain electrode extend from the side surface of the package.

  In addition, the GaN-based HEMTs according to these embodiments can be used for, for example, a power supply device. FIG. 8A is a diagram showing a PFC (power factor correction) circuit, and FIG. 8B is a diagram showing a server power supply (power supply device) including the PFC circuit shown in FIG. 8A.

  As shown in FIG. 8A, the PFC circuit 90 is provided with a capacitor 92 connected to a diode bridge 91 to which an AC power supply (AC) is connected. One terminal of the capacitor 92 is connected to one terminal of the choke coil 93, and the other terminal of the choke coil 93 is connected to one terminal of the switch element 94 and the anode of the diode 96. The switch element 94 corresponds to the HEMT in the above embodiment, and the one terminal corresponds to the drain electrode of the HEMT. The other terminal of the switch element 94 corresponds to a source electrode of the HEMT. One terminal of a capacitor 95 is connected to the cathode of the diode 96. The other terminal of the capacitor 92, the other terminal of the switch element 94, and the other terminal of the capacitor 95 are grounded. Then, a direct current power supply (DC) is taken out between both terminals of the capacitor 95.

  Then, as shown in FIG. 8B, the PFC circuit 90 is used by being incorporated in the server power supply 100 or the like.

  It is also possible to construct a power supply device that can operate at a higher speed, similar to the server power supply 100. A switch element similar to the switch element 94 can be used for a switch power supply or an electronic device. Further, these semiconductor devices can be used as components for a full-bridge power supply circuit such as a server power supply circuit.

  Note that a silicon carbide (SiC) substrate, a sapphire substrate, a silicon substrate, a GaN substrate, a GaAs substrate, or the like may be used as the substrate. The substrate may be conductive, semi-insulating, or insulating. However, in consideration of cost, it is preferable to use a Si substrate, a SiC substrate, or a sapphire substrate.

  Further, the structures of the gate electrode, the source electrode, and the drain electrode are not limited to those of the above-described embodiment. For example, these may be composed of a single layer. Moreover, these formation methods are not limited to the lift-off method. Furthermore, if ohmic characteristics can be obtained, the heat treatment after the formation of the source electrode and the drain electrode may be omitted. Further, heat treatment may be performed on the gate electrode.

  In addition, the recess portion may be formed by etching a part or all of the protective layer 16 before forming the gate electrode 17g. At this time, the recess portion may be formed up to an intermediate depth of the electron supply layer 15. Further, a gate insulating film may be formed between the gate electrode 17g and the protective layer 16. Furthermore, a superlattice buffer layer or the like may be used as the buffer layer 13.

  Further, the thickness and material of each layer are not limited to those of the above-described embodiment.

  Next, an experiment actually performed by the present inventor will be described. In this experiment, the stress relaxation layer 12 (AlN layer) is grown on the substrate 11 having a diameter of 6 inches in the same manner as in the second embodiment under four conditions, and the same as in the second embodiment. Then, the buffer layer 13, the electron transit layer 14, the electron supply layer 15 and the protective layer 16 were grown and cooled. The growth from the stress relaxation layer 12 (AlN layer) to the growth of the protective layer 16 was continuously performed. However, Condition No. 1, an AlN layer having a flat surface was grown instead of the stress relaxation layer 12. At this time, the V / III ratio during the formation of the AlN layer was about 2. Condition No. 2, the V / III ratio at the time of forming the stress relaxation layer 12 (AlN layer) is about 50, and the condition No. 3, the V / III ratio at the time of forming the stress relaxation layer 12 (AlN layer) is set to about 100. 4, the V / III ratio when the stress relaxation layer 12 (AlN layer) was formed was about 200. Other conditions were common.

  And condition no. 2 to 4, the surface properties of the stress relaxation layer 12 (AlN layer) before forming the buffer layer 13 and the like were analyzed from an atomic force microscope (AFM) image. The analysis result in a part of each sample is shown in FIG. FIG. 2, and FIG. 3, and FIG. 4 things. Further, the depth distribution, the diameter distribution, and the density of the depressions having a depth of 5 nm or more in each sample were measured. The results are shown in Table 1 below. Further, the warp size (warp value) and the crack length of each sample were also measured. FIG. 10 shows the relationship between the maximum value of the depth of the dent, the size of the warp, and the length of the crack.

  As shown in FIG. 10, the V / III ratio is extremely low, about 20, and the condition No. in which no depression exists on the surface of the AlN layer. In No. 1, the warpage of the substrate was about 150 μm, and the crack length was about 75 mm from the outer edge of the substrate. On the other hand, in condition No. In No. 2, an appropriate depression is formed, and the crack length is about 30 mm, and the condition No. It was reduced to less than half of 1. Condition No. 1 in which a more preferable depression was formed by further increasing the V / III ratio. In 3, the warpage was remarkably reduced. Condition No. 1 in which the V / III ratio was further increased to form a more preferable depression. In No. 4, the crack length was about 1 mm and 2 mm or less. That is, almost no cracks occurred. Moreover, the magnitude | size of curvature was about 40 micrometers and 50 micrometers or less, and curvature was reduced greatly.

  Furthermore, the inventor of the present application has also studied an AlN layer having a positive skewness having a projection-like unevenness on the surface, and the result will be described. The density of the projections and depressions is about the same as that of the AlN layer having a negative skewness. However, in the AlN layer having a positive skewness, the effect of reducing warpage and cracks was not sufficiently obtained. Even on a surface having a positive skewness, the growth from the inclined side surface of the projection-like unevenness that generates the compressive stress occurs. However, in the case of flattening the protruding surface, for example, the growth condition (V / III ratio) is reduced to about 50. At this time, the side surface of the protrusion is gradually flattened with the progress of growth. Become. Therefore, the effect that the inclined side surfaces generate compressive stress with each other as in the case where the skewness is negative is significantly impaired, and when the skewness is positive, the effect of suppressing warpage and cracking is not sufficiently obtained. Conceivable.

  Hereinafter, various aspects of the present invention will be collectively described as supplementary notes.

(Appendix 1)
A substrate,
A GaN-based compound semiconductor multilayer structure formed above the substrate;
An AlN-based stress relaxation layer provided between the substrate and the GaN-based compound semiconductor multilayer structure;
Have
A compound semiconductor device, wherein a recess having a depth of 5 nm or more is formed at a number density of 2 × 10 ¹⁰ cm ⁻² or more on a surface of the stress relaxation layer in contact with the GaN-based compound semiconductor multilayer structure.

(Appendix 2)
Supplementary note 1 characterized in that recesses having a depth of 6 nm or more are formed at a number density of 2 × 10 ¹⁰ cm ⁻² or more on the surface of the stress relaxation layer in contact with the GaN-based compound semiconductor multilayer structure. Compound semiconductor devices.

(Appendix 3)
Additional remark 1 or 2 wherein depressions having a depth of 7 nm or more are formed at a number density of 8 × 10 ⁹ cm ⁻² or more on a surface of the stress relaxation layer in contact with the GaN-based compound semiconductor multilayer structure. The compound semiconductor device described in 1.

(Appendix 4)
Additional remarks 1 to 3 wherein depressions having a depth of 15 nm or more are formed at a number density of 9 × 10 ⁹ cm ⁻² or more on a surface of the stress relaxation layer in contact with the GaN-based compound semiconductor multilayer structure. The compound semiconductor device according to any one of the above.

(Appendix 5)
5. The compound semiconductor device according to any one of appendices 1 to 4, wherein a diameter of the depression is 30 nm or more.

(Appendix 6)
6. The compound semiconductor device according to any one of appendices 1 to 5, wherein a diameter of the recess is 80 nm or more.

(Appendix 7)
7. The compound semiconductor device according to any one of appendices 1 to 6, wherein a skewness of a roughness curve on a surface of the stress relaxation layer in contact with the GaN-based compound semiconductor multilayer structure is negative.

(Appendix 8)
The compound semiconductor device according to any one of appendices 1 to 7, wherein the GaN-based compound semiconductor multilayer structure includes an electron transit layer and an electron supply layer.

(Appendix 9)
The compound semiconductor device according to appendix 8, further comprising a source electrode, a gate electrode, and a drain electrode formed above the electron supply layer.

(Appendix 10)
10. The compound semiconductor device according to any one of appendices 1 to 9, wherein the substrate is a Si substrate, a SiC substrate, or a sapphire substrate.

(Appendix 11)
A power supply device comprising the compound semiconductor device according to any one of appendices 1 to 10.

(Appendix 12)
A high-power amplifier comprising the compound semiconductor device according to any one of appendices 1 to 10.

(Appendix 13)
Forming an AlN-based stress relaxation layer above the substrate;
Forming a GaN-based compound semiconductor multilayer structure on the stress relaxation layer;
Have
When forming the stress relaxation layer, a recess having a depth of 5 nm or more is formed at a number density of 2 × 10 ¹⁰ cm ⁻² or more on the surface of the stress relaxation layer in contact with the GaN-based compound semiconductor multilayer structure. A method for manufacturing a compound semiconductor device.

(Appendix 14)
When forming the stress relaxation layer, recesses having a depth of 6 nm or more are formed at a number density of 2 × 10 ¹⁰ cm ⁻² or more on the surface of the stress relaxation layer in contact with the GaN-based compound semiconductor multilayer structure. Item 14. The method for manufacturing a compound semiconductor device according to appendix 13.

(Appendix 15)
When forming the stress relaxation layer, recesses having a depth of 7 nm or more are formed at a number density of 8 × 10 ⁹ cm ⁻² or more on the surface of the stress relaxation layer in contact with the GaN-based compound semiconductor multilayer structure. 15. A method for manufacturing a compound semiconductor device according to appendix 13 or 14, wherein:

(Appendix 16)
When forming the stress relaxation layer, recesses having a depth of 15 nm or more are formed at a number density of 9 × 10 ⁹ cm ⁻² or more on the surface of the stress relaxation layer in contact with the GaN-based compound semiconductor multilayer structure. 16. A method of manufacturing a compound semiconductor device according to any one of appendices 13 to 15, wherein:

(Appendix 17)
17. The method for manufacturing a compound semiconductor device according to any one of appendices 13 to 16, wherein a V / III ratio of a raw material gas used when forming the stress relaxation layer is 50 or more.

(Appendix 18)
18. The method of manufacturing a compound semiconductor device according to any one of appendices 13 to 17, wherein a V / III ratio of a raw material gas used when forming the stress relaxation layer is 100 or more.

(Appendix 19)
19. The method for manufacturing a compound semiconductor device according to any one of appendices 13 to 18, wherein a V / III ratio of a source gas used when forming the stress relaxation layer is 200 or more.

(Appendix 20)
20. The method for manufacturing a compound semiconductor device according to any one of appendices 13 to 19, wherein a growth temperature at the time of forming the stress relaxation layer is 1000 ° C. to 1040 ° C.

1: substrate 2: stress relaxation layer 2a: depression 3: compound semiconductor multilayer structure 11: substrate 12: stress relaxation layer 13: buffer layer 14: electron transit layer 15: electron supply layer 16: protective layer 17g: gate electrode 17s: source Electrode 17d: Drain electrode

Claims (12)

A substrate,
A nitride semiconductor multilayer structure formed above the substrate;
An AlN-based stress relaxation layer provided between the substrate and the nitride semiconductor multilayer structure;
A gate electrode, a source electrode and a drain electrode formed above the nitride semiconductor multilayer structure;
Have
On the surface of the stress relaxation layer in contact with the nitride semiconductor multilayer structure, depressions are formed at a depth of 15 nm or more and a number density of 9 × 10 ⁹ cm ⁻² or more.
A compound semiconductor device, wherein a skewness of a surface of the stress relaxation layer in contact with the nitride semiconductor multilayer structure is negative. The compound semiconductor device according to claim 1, wherein a diameter of the recess is 30 nm or more. The compound semiconductor device according to claim 2 , wherein a diameter of the recess is 80 nm or more. A substrate,
A nitride semiconductor multilayer structure formed above the substrate;
An AlN-based stress relaxation layer provided between the substrate and the nitride semiconductor multilayer structure;
A gate electrode, a source electrode and a drain electrode formed above the nitride semiconductor multilayer structure;
Have
On the surface of the stress relaxation layer in contact with the nitride semiconductor multilayer structure, depressions are formed at a depth of 5 nm or more and a number density of 2 × 10 ¹⁰ cm ⁻² or more.
Skewness of the surface in contact with the nitride semiconductor laminated structure of the stress relaxation layer is Ri negative der,
The recess diameter is the compound wherein a Der Rukoto than 80 nm. A substrate,
A nitride semiconductor multilayer structure formed above the substrate;
An AlN-based stress relaxation layer provided between the substrate and the nitride semiconductor multilayer structure;
A gate electrode, a source electrode and a drain electrode formed above the nitride semiconductor multilayer structure;
Have
On the surface of the stress relaxation layer in contact with the nitride semiconductor multilayer structure, depressions are formed with a depth of 7 nm or more and a number density of 8 × 10 ⁹ cm ⁻² or more.
Skewness of the surface in contact with the nitride semiconductor laminated structure of the stress relaxation layer is Ri negative der,
The recess diameter is the compound wherein a Der Rukoto than 80 nm. The AlN-based stress relieving layer of the compound semiconductor device according to any one of claims 1 to 5, characterized in that it consists of AlN layer. The nitride semiconductor multilayer structure is
An electronic travel layer,
An electron supply layer provided above the electron transit layer;
The compound semiconductor device according to any one of claims 1 to 6, characterized in that it comprises a. Forming an AlN-based stress relaxation layer above the substrate;
Forming a nitride semiconductor multilayer structure above the stress relaxation layer;
Forming a gate electrode, a source electrode, and a drain electrode above the nitride semiconductor multilayer structure;
Have
When the stress relaxation layer is formed, a recess having a depth of 15 nm or more is formed at a number density of 9 × 10 ⁹ cm ⁻² or more on a surface of the stress relaxation layer in contact with the nitride semiconductor multilayer structure, A method of manufacturing a compound semiconductor device, wherein the skewness of the surface is negative. 9. The method of manufacturing a compound semiconductor device according to claim 8, wherein a V / III ratio of a source gas used when forming the stress relaxation layer is 50 or more. 10. The method of manufacturing a compound semiconductor device according to claim 9 , wherein a V / III ratio of a source gas used when forming the stress relaxation layer is 100 or more. 11. The method of manufacturing a compound semiconductor device according to claim 10 , wherein a V / III ratio of a source gas used when forming the stress relaxation layer is 200 or more. The method of manufacturing a compound semiconductor device according to any one of claims 8 to 11, characterized in that the growth temperature for forming the stress relieving layer 1000 ℃ ~1040 ℃.

Images