JP2013105941A - Resin composition, semiconductor device, and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve reliability while keeping a cavity shape of a hollow package, in a semiconductor device including the hollow package.SOLUTION: The resin composition is used in a resin member 10 of a semiconductor device 100, and contains a thermosetting resin, a solvent and a photocurable resin. When the solvent is dried, and the resin composition is exposed with light having a wavelength of 365 nm so that the integrated quantity of light becomes 700 mJ/cmwith respect to a thickness of 50 μm and is photo-cured, and then viscoelasticity is measured under conditions of a temperature of 150°C and a frequency of 1 Hz, the storage elastic modulus is 100 Pa or more 10,000 Pa or less and tanδ is 0.1 or more.

Description

  The present invention relates to a resin composition used for a resin member of a semiconductor device, a semiconductor device, and a method for manufacturing the semiconductor device.

  A hollow package is known as a technique for sealing a semiconductor element such as a light receiving element provided on a semiconductor substrate. The hollow package is configured by arranging semiconductor elements in a space surrounded by two base materials and a resin member that bonds the two base materials. As a technique related to the hollow package, for example, there is one described in Patent Document 1.

  The technique described in Patent Document 1 relates to a hollow package in which an adhesive layer is formed on a semiconductor substrate by spin coating. Specifically, after the first adhesive layer is formed on the semiconductor substrate by spin coating, the first adhesive layer located on the outer peripheral portion of the semiconductor substrate is removed, and further, the first adhesive layer is formed on the outer peripheral portion of the semiconductor substrate by spin coating. 2 adhesive layers are provided.

JP 2008-118029 A

  In the manufacture of a hollow package formed by bonding a first base material and a second base material via a resin member provided on the first base material, a resin provided on the first base material When a part of the member is raised, the resin member may not be formed flat. In this case, sufficient adhesion between the second base material and the resin member cannot be obtained, and the reliability of the semiconductor device is lowered. On the other hand, if the raised portion of the resin member is crushed in order to obtain the adhesion between the second base material and the resin member, the shape of the resin member collapses, and the cavity shape of the hollow package cannot be maintained. .

  An object of the present invention is to improve reliability of a semiconductor device including a hollow package while maintaining the cavity shape of the hollow package.

According to the present invention, a first substrate;
A second substrate provided on the first substrate;
A resin member interposed between the first substrate and the second substrate;
A semiconductor element disposed in a space surrounded by the first base material, the second base material, and the resin member;
A resin composition used for the resin member of a semiconductor device comprising:
A thermosetting resin;
A photocurable resin;
Solvent,
Have
After the solvent is dried and exposed to light having a wavelength of 365 nm so that the integrated light quantity is 700 mJ / cm ² with respect to a thickness of 50 μm, photocuring is performed, and viscoelasticity is performed at 150 ° C. and 1 Hz. When measured, a resin composition having a storage elastic modulus of 100 Pa or more and 10,000 Pa or less and a tan δ of 0.1 or more is provided.

  According to the present invention, a semiconductor device formed using the above resin composition is provided.

According to the present invention, the first substrate having a semiconductor element is spin-coated with a resin composition containing a thermosetting resin, a photocurable resin, and a solvent, and the resin composition is dried. A step of forming a resin member on a base material; a step of exposing and photocuring the resin member with light having a wavelength of 365 nm so that an integrated light amount is 700 mJ / cm ² with respect to a thickness of 50 μm; A step of crimping a second base material onto the first base material via the resin member, wherein the resin member is formed on an end portion of the first base material. In the step of press-bonding the second base material on the first base material, the part formed thick on the end portion of the first base material in the resin member The resin composition is crushed by the second substrate, In after the solvent was dried, and was photocured by exposure to integrated light quantity by the light is 700 mJ / cm ² with respect to the thickness 50μm with a wavelength of 365 nm, 0.99 ° C., viscoelasticity under the conditions of 1Hz When measured, a method for manufacturing a semiconductor device having a storage elastic modulus of 100 Pa to 10,000 Pa and a tan δ of 0.1 or more is provided.

  According to the present invention, in a semiconductor device including a hollow package, it is possible to improve the reliability while maintaining the cavity shape of the hollow package.

It is sectional drawing which shows the semiconductor device which concerns on this embodiment. FIG. 3 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 1. FIG. 3 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 1. FIG. 3 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 1. FIG. 3 is a cross-sectional view showing a method for manufacturing the semiconductor device shown in FIG. 1. It is sectional drawing which shows the case where the semiconductor device which concerns on this embodiment is mounted on the mounting board | substrate.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

  FIG. 1 is a cross-sectional view showing a semiconductor device 100 according to this embodiment. The semiconductor device 100 includes a base material 20, a base material 22, a resin member 10, and a semiconductor element 30. The base material 22 is provided on the base material 20. The resin member 10 is interposed between the base material 20 and the base material 22. The semiconductor element 30 is disposed in a cavity 40 surrounded by the base material 20, the base material 22, and the resin member 10. The semiconductor device 100 constitutes a solid-state imaging device, for example.

The resin composition used for the resin member 10 includes a thermosetting resin, a photocurable resin, and a solvent. The resin composition used for the resin member 10 is photocured by drying the solvent and exposing it to light having a wavelength of 365 nm so that the integrated light amount becomes 700 mJ / cm ² with respect to the thickness of 50 μm. , The storage elastic modulus (G ′) is 100 Pa or more and 10,000 Pa or less, and the tan δ (loss tangent, G ″ / G ′) is 0.1 or more. . Hereinafter, the configuration of the semiconductor device 100 will be described in detail.

  The base material 20 is made of, for example, silicon. The base material 22 consists of an acrylic resin, a polyethylene terephthalate resin (PET), or a glass substrate, for example, and comprises a transparent substrate.

  The semiconductor element 30 is a light receiving element such as a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor). When the semiconductor element 30 is a light receiving element, a photoelectric conversion unit (not shown) is formed on the lower surface of the semiconductor element 30, that is, the base material 20, and light received by the semiconductor element 30 is converted into an electrical signal. It becomes.

The resin composition constituting the resin member 10 has a solvent. The resin member 10 is formed by spin-coating the resin composition containing a solvent on the base material 20 and drying the solvent of the resin composition.
In the state before drying the solvent of the resin composition, the content of the solvent is preferably 5 to 90% by weight of the resin composition. Moreover, the boiling point of a solvent is 40-200 degreeC, for example.
Examples of the solvent include, but are not limited to, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl cyclohexanone, diacetone alcohol, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, isobutyl alcohol, isopropyl alcohol, isopentyl alcohol, ethyl ether. , Ethylene glycol monoethyl ether, ethylene glycol monoethyl ether acetate, ethylene glycol mono-normal-butyl ether, ethylene glycol monomethyl ether, isobutyl acetate, isopropyl acetate, isopentyl acetate, ethyl acetate, normal-butyl acetate, normal-propyl acetate, acetic acid Normal-pentyl, methyl acetate, cyclohexa 1,4-dioxane, N, N-dimethylformamide, tetrahydrofuran, normal hexane, 1-butanol, 2-butanol, methanol, methylcyclohexanol, methyl-normal-butyl ketone, γ-butyrolactone, N-methylpyrrolidone, etc. Is mentioned.

  The resin composition constituting the resin member 10 has a thermosetting resin. Although content of a thermosetting resin is not specifically limited, 10 to 50 weight% of the whole component except a solvent is preferable in a resin composition, and 20 to 40 weight% is especially preferable. When the content of the thermosetting resin is less than 10% by weight, the effect of improving the heat resistance may be lowered. Moreover, when the content rate of a thermosetting resin exceeds 50 weight%, the effect of improving the toughness of the resin member 10 may fall.

  Although it does not specifically limit as a thermosetting resin, For example, phenol novolak resin, cresol novolak resin, novolak-type phenol resins, such as bisphenol A novolak resin, phenol resin, such as resol phenol resin, bisphenol A epoxy resin, bisphenol F epoxy resin Bisphenol type epoxy resin, novolak epoxy resin, novolak type epoxy resin such as cresol novolak epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, triazine nucleus Epoxy resin, epoxy resin such as dicyclopentadiene modified phenolic epoxy resin, triazine ring such as urea (urea) resin, melamine resin Resin, unsaturated polyester resin, bismaleimide resin, polyurethane resin, diallyl phthalate resin, silicone resin, resin having a benzoxazine ring, cyanate ester resin, epoxy-modified siloxane, and the like. Also good. Among these, an epoxy resin is particularly preferable. Thereby, heat resistance and adhesiveness can be improved more.

  Moreover, it is preferable to use together the epoxy resin solid at room temperature (especially bisphenol-type epoxy resin) and an epoxy resin liquid at room temperature (especially silicone modified epoxy resin liquid at room temperature) as an epoxy resin. Thereby, it can be set as the resin member 10 which is excellent in both flexibility and resolution, maintaining heat resistance.

  The thermosetting resin can further include a phenol novolac resin. The developability can be improved by adding a phenol resin. Moreover, by including both an epoxy resin and a phenol novolac resin, the thermosetting property of the epoxy resin can be improved, and the strength of the resin member 10 can be further improved.

  The resin composition constituting the resin member 10 includes a photocurable resin. As the photocurable resin, for example, an acrylic polyfunctional monomer is used. A polyfunctional monomer refers to a monomer having three or more functions, and in the present embodiment, a trifunctional or tetrafunctional acrylate compound can be suitably used. Use of a tri- or higher functional monomer is preferable because sufficient strength of the resin member 10 can be obtained in order to ensure the shape retention of the semiconductor device 100.

  Specifically, examples of the acrylic polyfunctional monomer include trifunctional (meth) acrylates such as trimethylolpropane tri (meth) acrylate and pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, and ditrimethylolpropane. There are tetrafunctional (meth) acrylates such as tetra (meth) acrylate and hexafunctional (meth) acrylates such as dipentaerythritol hexa (meth) acrylate. Among these, trifunctional (meth) acrylate or tetrafunctional (meth) acrylate is preferable. By using trifunctional (meth) acrylate or tetrafunctional (meth) acrylate, the strength of the resin member 10 after exposure can be increased, and the shape retention when the base material 20 and the base material 22 are bonded is improved. be able to.

  Although content of an acrylic polyfunctional monomer is not specifically limited, 5-45 weight% of the whole component except a solvent is preferable among resin compositions, and 15-35 weight% is especially preferable. If the content is less than 5% by weight, the strength of the resin member 10 when the base material 20 and the base material 22 are attached is lowered. If it exceeds 45% by weight, the sticking property between the base material 20 and the base material 22 may be lowered.

  The photocurable resin may contain an epoxy vinyl ester resin. Thereby, since it radical-polymerizes with a polyfunctional monomer at the time of exposure, the intensity | strength of the resin member 10 can be raised. On the other hand, during development, the solubility in an alkaline developer is improved, so that residues after development can be reduced.

  As epoxy vinyl ester resins, 2-hydroxy-3-phenoxypropyl acrylate, Epolite 40E methacrylic adduct, Epolite 70P acrylic acid adduct, Epolite 200P acrylic acid adduct, Epolite 80MF acrylic acid adduct, Epolite 3002 methacrylic acid adduct Epolite 3002 acrylic acid adduct, Epolite 1600 acrylic acid adduct, bisphenol A diglycidyl ether methacrylic acid adduct, bisphenol A diglycidyl ether acrylic acid adduct, Epolite 200E acrylic acid adduct, Epolite 400E acrylic acid adduct, etc. There is.

  Although content of an epoxy vinyl ester resin is not specifically limited, 1 to 25 weight% of the whole component except a solvent is preferable among resin compositions. If it exceeds 25% by weight, the water absorption characteristics of the resin member 10 are lowered, and condensation tends to occur. If it is less than 1% by weight, the resin member 10 may have insufficient solubility in an alkaline developer, and a residue may be generated after development. In particular, it is preferable to set it in the range of 3 to 15% by weight. By doing so, it is possible to further reduce the foreign matter remaining on the surfaces of the base material 20 and the base material 22 after being attached.

  Moreover, it is preferable that the resin composition which comprises the resin member 10 contains a photoinitiator. Thereby, the resin member 10 can be efficiently patterned by photopolymerization.

  Examples of the photopolymerization initiator include benzophenone, acetophenone, benzoin, benzoin isobutyl ether, methyl benzoin benzoate, benzoin benzoic acid, benzoin methyl ether, benzylfinyl sulfide, benzyl, dibenzyl, diacetyl, and benzyldimethyl ketal.

  Although content of a photoinitiator is not specifically limited, 0.5-5 weight% of the whole component except a solvent is preferable among resin compositions, and 1.0-3.0 weight% is especially preferable. If the content is less than 0.5% by weight, the effect of initiating photopolymerization may be reduced. Moreover, when content exceeds 5 weight%, the reactivity will become high too much and a preservability and resolution may fall.

  In addition, although the resin composition which comprises the resin member 10 may contain an inorganic filler, it is 20 weight% or less of the whole component except a solvent among resin compositions. If it exceeds 20% by weight, foreign matter due to the inorganic filler adheres to the base materials 20 and 22 or undercut occurs, which is not preferable. The undercut is considered to occur when the developer soaks into the resin member 10 because the resin member 10 is weakly cured on the substrate 20 side or the substrate 22 side in the thickness direction. In this embodiment, the inorganic filler may not be included.

  Examples of inorganic fillers include fibrous fillers such as alumina fibers and glass fibers, acicular fillers such as potassium titanate, wollastonite, aluminum borate, acicular magnesium hydroxide, and whiskers, talc, mica, and sericite. , Glass flakes, flake graphite, plate-like fillers such as plate-like calcium carbonate, spherical fillers such as calcium carbonate, silica, fused silica, fired clay and unfired clay, porous fillings such as zeolite and silica gel Materials and the like. These may be used alone or in combination of two or more. Among these, spherical (granular) fillers are preferable.

  The average particle diameter of the inorganic filler is not particularly limited, but is preferably 0.005 to 100 μm, and particularly preferably 0.01 to 50 μm. If the average particle diameter exceeds 100 μm, the film may have an abnormal appearance or poor resolution, and if it is less than 0.005 μm, it may cause poor adhesion during heat pasting. The average particle size can be evaluated using, for example, a laser diffraction particle size distribution analyzer SALD-7000 (manufactured by Shimadzu Corporation).

  Moreover, the resin composition which comprises the resin member 10 may contain alkali-soluble resin. Although content of alkali-soluble resin is not specifically limited, 20 to 60 weight% of the whole component except a solvent is preferable among resin compositions. When the content is less than 20% by weight, the curing for improving the compatibility may be lowered, and when it exceeds 60% by weight, the developability or the resolution may be lowered.

  Although it does not specifically limit as alkali-soluble resin, What is necessary is just a resin which has a carboxyl group or a hydroxyl group. For example, at least one radically polymerizable monomer having a hydroxyl group or a carboxyl group such as (meth) acryl-modified novolak resin such as (meth) acryl-modified bis A novolak resin, acrylic resin, (meth) acryloyl acid or hydroxystyrene Copolymer obtained by polymerization, phenol compound, phenol resin, carboxyl group-containing compound or resin, product obtained by reacting epoxy resin with acid anhydride, hydroxyl group or carboxyl group-containing product Examples thereof include polyimide, polyamideimide, polyimide precursor, polyvinylphenol, poly α-methylvinylphenol, and among them, alkali-soluble novolak resins are preferable, and (meth) acryl-modified novolak resins are particularly preferable. Thereby, not only an organic solvent but an alkaline aqueous solution with a small environmental load can be applied to the developer, and heat resistance can be maintained.

  The resin composition constituting the resin member 10 includes additives such as a plastic resin, a leveling agent, an antifoaming agent, and a coupling agent within the range not impairing the object of the present invention in addition to the above-described curable resin and filler. Can be contained.

The values of the tan δ and the storage elastic modulus of the resin member 10 can be controlled, for example, by adjusting the mobility of the molecular chain of the resin composition constituting the resin member 10. The ease of movement of the molecular chain of the resin composition after photocuring is adjusted by varying the crosslink density of the photocurable resin, the ease of movement of the photocurable resin, or the ease of movement of the entire resin composition, for example. can do.
When the molecular chain is made easy to move, the value of tan δ increases. On the other hand, when it is difficult to move the molecular chain, the value of the storage elastic modulus becomes high. By appropriately adjusting these values, desired tan δ and storage elastic modulus values can be obtained.

  The molecular chain of the resin composition becomes easy to move, for example, by reducing the crosslink density of the photocurable resin, making the photocurable resin easy to move, or making the entire resin composition easy to move. As a method for reducing the crosslink density of the photocurable resin, for example, (meth) acrylate having a small number of functional groups may be used as the photocurable resin. As a method for making the photocurable resin easy to move, for example, an aliphatic (meth) acrylate is used as the photocurable resin. Examples of methods for making the entire resin composition easy to move include, for example, using a thermosetting resin with high flowability, increasing the amount of thermosetting resin added, adding a plasticizer, or adding a silicone resin. And so on.

The molecular chain of the resin composition becomes difficult to move, for example, by increasing the crosslink density of the photocurable resin, making the photocurable resin difficult to move, making the entire resin composition difficult to move, and the like. As a method for increasing the crosslinking density of the photocurable resin, for example, (meth) acrylate having a large number of functional groups may be used as the photocurable resin. Examples of the method for making the photocurable resin difficult to move include, for example, using (meth) acrylate having an aromatic ring as the photocurable resin. Examples of methods for making the entire resin composition difficult to move include, for example, using a thermosetting resin with low flowability, reducing the amount of thermosetting resin added, adding an inorganic filler, or Tg equal to or higher than the sticking temperature. For example, adding an organic filler.
Here, the sticking temperature means a temperature at the time of heat treatment for bonding the base material 20 and the base material 22 to each other.

  Next, a method for manufacturing the semiconductor device 100 according to the present embodiment will be described with reference to FIGS. 2-5 is sectional drawing which shows the manufacturing method of the semiconductor device 100 shown in FIG. FIG. 6 is a cross-sectional view showing a case where the semiconductor device 100 according to the present embodiment is mounted on the mounting substrate 110. First, as shown in FIG. 2, the semiconductor element 30 is provided on the base material 20. Next, as shown in FIG. 3, the resin member 10 is formed on the base material 20 on which the semiconductor element 30 is provided. Formation of the resin member 10 is performed by spin-coating a resin composition on the base material 20, for example, and drying the solvent in a resin composition.

  In the resin member 10 formed by spin coating, an edge crown 12 formed on the end portion of the base material 20 is formed thicker than other portions. The edge crown 12 occurs, for example, on the entire circumference of the substrate 20. The height of the edge crown 12 is, for example, 10 to 20 μm with respect to the surface of the other part of the resin member 10. The width of the edge crown 12 is about 2 mm, for example.

  The principle that the edge crown 12 is formed by spin coating is presumed as follows. The solvent contained in the resin composition supplied onto the base material 20 is volatilized only from the upper surface in the central portion of the base material 20. On the other hand, in the edge part of the base material 20, it volatilizes from an upper surface and a side surface. Thereby, as a spin coat process progresses, the part located in the center part of substrate 20 among resin compositions will contain more solvent than the part located in the edge part of substrate 20. For this reason, the solvent in the resin composition moves from the center portion of the substrate 20 to the end portion of the substrate 20. And a resin component moves with the movement of this solvent. Therefore, the edge crown 12 is generated on the end portion of the base material 20.

Next, the resin member 10 is selectively irradiated with an electron beam (for example, ultraviolet rays) using a photomask. Thereby, the light irradiated part of the resin member 10 is photocured. This exposure step is performed, for example, so that the integrated light quantity becomes 700 mJ / cm ² with respect to the thickness of 50 μm by light having a wavelength of 365 nm. The exposure process is performed by broadband exposure using, for example, a mercury lamp. When the exposed resin member 10 is developed with a developer (for example, an alkaline aqueous solution, an organic solvent, or the like), the portion irradiated with light remains without being dissolved in the developer. In this way, as shown in FIG. 4, the resin member 10 is left so as to surround the semiconductor element 30 on the base material 20. The resin member 10 is left so as to have, for example, a lattice shape.

  Next, as shown in FIG. 5, the base member 22 is brought into contact with the base member 20 through the resin member 10 and the resin member 10 is heated. Thereby, the base material 20 and the base material 22 are bonded via the resin member 10. The step of bringing the base material 20 and the base material 22 into contact with each other and the step of heating the resin member 10 may be performed before or after each other. The step of bringing the base material 20 and the base material 22 into contact is performed by crushing the edge crown 12 provided on the resin member 10 so that the surface of the resin member 10 that contacts the base material 22 becomes flat. Thereby, since the surface which contacts the base material 22 among the resin members 10 becomes flat, sufficient adhesiveness of the resin member 10 and the base material 22 can be obtained. The process of heating the resin member 10 is performed by heating the resin member 10 at 150 to 200 ° C., for example. Thereby, the resin member 10 containing a thermosetting resin hardens | cures, and the base material 20 and the base material 22 are mutually adhere | attached.

Here, the resin member 10 is exposed to light having a wavelength of 365 nm so that the integrated light amount is 700 mJ / cm ² with respect to the thickness of 50 μm, and is photocured, and then the storage elastic modulus is 100 Pa or more and 10,000 Pa or less. is there. If the storage elastic modulus is less than 100 Pa, the cavity shape of the hollow package cannot be maintained after the base material 20 and the base material 22 are pressure-bonded. Moreover, when the storage elastic modulus exceeds 10,000 Pa, it becomes difficult to crush the resin member 10, and the adhesion between the resin member 10 and the base material 22 is impaired. The resin member 10 is exposed to light having a wavelength of 365 nm so that the accumulated light amount becomes 700 mJ / cm ² with respect to the thickness of 50 μm, and is photocured. When tan δ is less than 0.1, sufficient flow of the resin member cannot be obtained when the edge crown 12 is crushed, and the adhesion between the resin member 10 and the substrate 22 is impaired. Further, the resin member 10 preferably has a tan δ of 5.0 or less, and more preferably 3.0 or less. If tan δ exceeds 5.0, the cavity shape of the hollow package may not be maintained after the substrate 20 and the substrate 22 are pressure bonded.

  Next, the base material 20, the base material 22, and the resin member 10 are divided for each semiconductor element 30 by dicing. Thereby, the semiconductor device 100 shown in FIG. 1 is obtained. As shown in FIG. 6, the semiconductor device 100 is mounted on a mounting substrate 110, for example. In this case, the semiconductor device 100 is connected to the mounting substrate 110 through the metal film 50 and the solder bumps 52 formed on the base material 20.

Next, the effect of this embodiment will be described. According to the resin composition according to the present embodiment, after the solvent is dried and exposed to light having a wavelength of 365 nm so that the integrated light amount becomes 700 mJ / cm ² with respect to the thickness of 50 μm, photocuring is performed. When the viscoelasticity is measured under conditions of 150 ° C. and 1 Hz, the storage elastic modulus is 100 Pa or more and 10,000 Pa or less, and tan δ is 0.1 or more. When the storage elastic modulus and tan δ of the resin composition are in the above ranges, it becomes easy to crush the raised portion formed on the resin member 10, and sufficient adhesion between the base material 22 and the resin member 10 can be obtained. it can. Moreover, when crushing the rising part formed in the resin member 10, it can suppress that a cavity shape collapse | crumbles. Therefore, in a semiconductor device composed of a hollow package, it is possible to improve reliability while maintaining the cavity shape of the hollow package.

Next, examples of the present invention will be described.
Example 1
1. Synthesis of alkali-soluble resin ((meth) acrylic modified bis A novolak resin) 500 g of a 60% solid content MEK (methyl ethyl ketone) solution of novolak bisphenol A resin (Phenolite LF-4871, manufactured by Dainippon Ink & Chemicals, Inc.) Into a 2 L flask, 1.5 g of tributylamine as a catalyst and 0.15 g of hydroquinone as a polymerization inhibitor were added and heated to 100 ° C. The glycidyl methacrylate 180.9g was dripped in 30 minutes in it, and the methacryloyl modified novolak-type bisphenol A resin MPN001 (methacryloyl modification rate 50%) of solid content 74% was obtained by making it stir-react at 100 degreeC for 5 hours. .

2. Preparation of resin varnish As thermosetting resin, 10% by weight of bisphenol A novolac type epoxy resin (Dainippon Ink Chemical Co., Ltd., Epicron N-865), bisphenol A type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd.) Ep-828) 15% by weight, silicone epoxy resin (Toray Dow Corning Silicone Co., Ltd., BY16-115) 5% by weight, photocurable resin, trimethylolpropane trimethacrylate (manufactured by Kyoeisha Chemical Co., Ltd.) 25% by weight of light ester TMP), 40% by weight of the above synthesized (meth) acryl-modified bis-A novolak resin as an alkali-soluble resin, photopolymerization initiator (manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 651) ) 2% by weight, phenol novolac resin (Sumitomo Bee) 3% by weight of Krite Co., PR53647) was weighed.
Thereafter, MEK was added as a solvent, and the resin varnish was adjusted by stirring for 1 hour at 3000 rpm using a disperser. In addition, the solvent was added so that solid content (Resin content) with respect to the whole resin varnish might be 80 weight%.

3. Formation of Resin Member The adjusted resin composition (the resin varnish) was supplied onto the substrate 20 by a spin coater, and the solvent in the resin composition was dried. By exposing and developing this, the resin member 10 formed in a lattice shape on the base material 20 was obtained. The exposure was performed with light having a wavelength of 365 nm so that the integrated light amount was 700 mJ / cm ² with respect to the thickness of 50 μm.

4). Production of Hollow Package The base material 20 and the base material 22 were pressed through the resin member 10. At this time, the base material 20 and the base material 22 were crimped | bonded so that the swelling part formed in the edge part of the resin member 10 by spin coating might be crushed. And the resin member 10 was heated on 180 degreeC and the conditions for 10 minutes. The obtained adhesive of the base material 20 and the base material 22 was diced into a predetermined size using a dicing saw to obtain a hollow package.

(Example 2)
Except for using the synthesized (meth) acryl-modified bis-A novolac resin as an alkali-soluble resin in a solid content of 30% by weight and silica (manufactured by Admatechs Co., Ltd., SO-E5) 10% by weight Same as Example 1.

(Comparative Example 1)
As thermosetting resin, bisphenol A type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., Ep-828) 85% by weight, as photocurable resin, methoxypolyethylene glycol # 400 methacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd.) M-90G) 5% by weight, 5% by weight of the above synthesized (meth) acryl-modified bis-A novolak resin as an alkali-soluble resin as a solid content, photopolymerization initiator (manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 651) 2% by weight and 3% by weight of phenol novolac resin (Sumitomo Bakelite Co., Ltd., PR53647).
Thereafter, MEK was added as a solvent, and the resin varnish was adjusted by stirring for 1 hour at 3000 rpm using a disperser. In addition, the solvent was added so that solid content (Resin content) with respect to the whole resin varnish might be 80 weight%.
Except for these points, the procedure was the same as in Example 1.
(Comparative Example 2)
As thermosetting resin, 5% by weight of bisphenol A type epoxy resin (Japan Epoxy Resin Co., Ltd., Ep-828), as photocurable resin, methoxypolyethylene glycol # 400 methacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd.) M-90G) 5% by weight, 5% by weight of the above synthesized (meth) acryl-modified bis-A novolak resin as an alkali-soluble resin as a solid content, photopolymerization initiator (manufactured by Ciba Specialty Chemicals Co., Ltd., Irgacure 651) 2% by weight, 3% by weight of phenol novolac resin (Sumitomo Bakelite Co., Ltd., PR53647) and 80% by weight of silica (manufactured by Admatechs Co., Ltd., SO-E5) were weighed.
Thereafter, MEK was added as a solvent, and the resin varnish was adjusted by stirring for 1 hour at 3000 rpm using a disperser. In addition, the solvent was added so that solid content (Resin content) with respect to the whole resin varnish might be 80 weight%.
Except for these points, the procedure was the same as in Example 1.
(Comparative Example 3)
As thermosetting resin, 5% by weight of bisphenol A type epoxy resin (Japan Epoxy Resin Co., Ltd., Ep-828), as photocurable resin, trimethylolpropane trimethacrylate (manufactured by Kyoeisha Chemical Co., Ltd., Light Ester TMP) 5% by weight, 5% by weight of the above synthesized (meth) acryl-modified bis-A novolac resin as an alkali-soluble resin, 2% by weight of photopolymerization initiator (Ciba Specialty Chemicals, Inc., Irgacure 651) %, Phenol novolak resin (Sumitomo Bakelite Co., Ltd., PR53647) 3% by weight, silica as a filler (manufactured by Admatechs Co., Ltd., SO-E5) 80% by weight, and then MEK was added as a solvent, By stirring at 3000 rpm for 1 hour using A resin varnish was prepared. In addition, the solvent was added so that solid content (Resin content) with respect to the whole resin varnish might be 80 weight%.
Except for these points, the procedure was the same as in Example 1.

(Characteristic evaluation of resin composition)
For the resin compositions prepared in Examples and Comparative Examples, after the solvent is dried and exposed to light having a wavelength of 365 nm so that the integrated light quantity becomes 700 mJ / cm ² with respect to the thickness of 50 μm, the resin composition is photocured. The storage elastic modulus and tan δ were measured. The storage elastic modulus and tan δ were measured by a dynamic shear viscoelasticity test using a dynamic viscoelasticity measuring device RS150 (Thermo Haake). The dynamic shear viscoelasticity test was performed under the conditions of measurement frequency: 1 Hz, measurement temperature range: 25 to 250 ° C., temperature increase rate: 10 ° C./min, and the storage elastic modulus and tan δ at 150 ° C. were measured. The results are shown in Table 1.

(Evaluation of hollow package)
The following evaluation was performed about the hollow package produced in the Example and the comparative example. The results are shown in Table 1.

(1) Adhesiveness About the hollow package produced in the Example and the comparative example, the adhesiveness of the resin member 10 and the base material 22 was evaluated with the optical microscope.
○: No occurrence of floating was observed between the resin member 10 and the base material 22 after the resin member 10 and the base material 22 were bonded.
X: After adhesion between the resin member 10 and the base material 22, floating was observed between the resin member 10 and the substrate 22.

(2) Retention property of cavity The shape retention property of the cavity 40 was evaluated about the produced hollow package. The shape retention of the cavity 40 was evaluated by an optical microscope for the degree of collapse of the cavity 40 of the hollow package after the substrate 20 and the substrate 22 were bonded. Each code | symbol is as follows.
○: No change was observed in the cavity shape before and after the adhesion between the substrate 20 and the substrate 22.
X: After bonding of the base material 20 and the base material 22, the cavity shape was crushed, and the size and shape were changed.

  As is clear from Table 1, Examples 1 and 2 showed good results in both the adhesion between the resin member 10 and the substrate 22 and the shape retention of the cavity 40.

  As mentioned above, although embodiment of this invention was described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

DESCRIPTION OF SYMBOLS 10 Resin member 12 Edge crown 20 Base material 22 Base material 30 Semiconductor element 40 Cavity 50 Metal film 52 Solder bump 100 Semiconductor device 110 Mounting substrate

Claims (10)

A first substrate;
A second substrate provided on the first substrate;
A resin member interposed between the first substrate and the second substrate;
A semiconductor element disposed in a space surrounded by the first base material, the second base material, and the resin member;
A resin composition used for the resin member of a semiconductor device comprising:
A thermosetting resin;
A photocurable resin;
Solvent,
Have
After the solvent is dried and exposed to light having a wavelength of 365 nm so that the integrated light quantity is 700 mJ / cm ² with respect to a thickness of 50 μm, photocuring is performed, and viscoelasticity is performed at 150 ° C. and 1 Hz. A resin composition having a storage elastic modulus of 100 Pa to 10,000 Pa and a tan δ of 0.1 or more when measured. The resin composition according to claim 1,
The thermosetting resin is a phenol resin, an epoxy resin, a resin having a triazine ring, an unsaturated polyester resin, a bismaleimide resin, a polyurethane resin, a diallyl phthalate resin, a silicone resin, a resin having a benzoxazine ring, a cyanate ester resin, and A resin composition comprising at least one of epoxy-modified siloxanes. In the resin composition according to claim 1 or 2,
The resin composition whose weight content rate of the said thermosetting resin is 10 to 50 weight% of the whole component except the said solvent among the said resin compositions. The resin composition according to any one of claims 1 to 3,
The photocurable resin is a resin composition containing an acrylic polyfunctional monomer. The resin composition according to any one of claims 1 to 4,
The weight content rate of the said photocurable resin is a resin composition which is 5 to 45 weight% of the whole component except the said solvent among the said resin compositions. The resin composition according to any one of claims 1 to 5,
The said solvent is a resin composition whose boiling point is 40-200 degreeC. The resin composition according to any one of claims 1 to 6,
Further having an inorganic filler;
The resin composition whose weight content rate of the said inorganic filler is 20 weight% or less of the whole component except the said solvent among the said resin compositions.   A semiconductor device formed using the resin composition according to claim 1. On the first base material, a resin composition containing a thermosetting resin, a photocurable resin and a solvent is spin-coated on a first base material having a semiconductor element, and the solvent of the resin composition is dried. Forming a resin member on
Exposing the resin member with light having a wavelength of 365 nm so that an integrated light amount is 700 mJ / cm ² with respect to a thickness of 50 μm, and photocuring;
A step of pressure-bonding a second substrate on the first substrate via the resin member;
With
In the step of forming the resin member, the resin member is formed thicker than other portions on the end portion of the first base material,
In the step of pressure-bonding the second base material on the first base material, a portion of the resin member formed thick on an end portion of the first base material is crushed with the second base material,
The resin composition was dried at 150 ° C. and 1 Hz after the solvent was dried and exposed to light having a wavelength of 365 nm so that the integrated light amount was 700 mJ / cm ² with respect to a thickness of 50 μm. When the viscoelasticity is measured under the above conditions, the method for manufacturing a semiconductor device has a storage elastic modulus of 100 Pa to 10,000 Pa and a tan δ of 0.1 or more. In the manufacturing method of the semiconductor device according to claim 9,
A semiconductor device comprising a step of heating the resin member before or after the step of pressure-bonding the second substrate on the first substrate or simultaneously with the step of pressure-bonding the second substrate on the first substrate. Production method.

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