JP2013186989A - アニオン伝導電解質膜およびその製造方法 - Google Patents
アニオン伝導電解質膜およびその製造方法 Download PDFInfo
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- JP2013186989A JP2013186989A JP2012049960A JP2012049960A JP2013186989A JP 2013186989 A JP2013186989 A JP 2013186989A JP 2012049960 A JP2012049960 A JP 2012049960A JP 2012049960 A JP2012049960 A JP 2012049960A JP 2013186989 A JP2013186989 A JP 2013186989A
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- electrolyte membrane
- polymer
- anion
- conducting electrolyte
- anion conducting
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M8/00—Fuel cells; Manufacture thereof
- H01M8/10—Fuel cells with solid electrolytes
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Abstract
【解決手段】放射線グラフト重合により、高温での機械特性や化学安定性に優れたフッ素系高分子、オレフィン系高分子又は芳香族系高分子からなる高分子基材1に、ハロゲン化アルキル基を含むグラフト鎖2を導入し、塩基性強度の高い種々のアミン(有機強塩基)とハロゲン化アルキル部分との反応により、弱塩基性の4級アンモニウム塩を3導入することで、最も弱い酸である水酸化物イオンと安定な弱酸-弱塩基の組み合わせにより、高導電率かつ低含水率のアニオン伝導電解質膜を得る。
【選択図】図1
Description
高分子基材を主鎖部、ビニルモノマーとのグラフト重合した部分をグラフト鎖部とすると、主鎖部に対するグラフト鎖部の重量比は、次式のグラフト率(Xdg[重量%])として表される。
高分子電解質膜のイオン交換容量(Ion Exchange Capacity, IEC)は次式で表される。
高分子電解質膜の4級化率は次式で表される。
室温下、水中で保存のCl型またはOH型の高分子電解質膜を取り出し、表面の水を軽くふき取った後、重量を測定する(W5(g))。この膜を40℃にて16時間、真空乾燥後、重量測定することで高分子電解質膜の乾燥重量W4(g)を求め、W5、W4から次式により含水率を算出する。
交流法による測定:白金電極からなる膜抵抗測定セルとヒュ−レットパッカード製のLCRメータ、E−4925Aを使用した。室温で水中で飽和膨潤状態にある高分子電解質膜を取り出し、白金電極間にはさみ、60℃の脱イオン水に浸漬2分後のインピーダンスによる膜抵抗(Rm)を測定した。高分子電解質膜の電気伝導度を次式を用いて算出した。
膜厚50μmのETFE膜(旭硝子社製)を、アルゴン雰囲気下、室温において、50kGyのγ線を照射した後、60℃において、クロロメチルスチレン(CMS)/キシレン溶液中(クロロメチルスチレン:キシレン=1:1)に、2時間浸漬させ、幹となるエチレン・4フッ化エチレン共重合体にクロロメチルスチレンをグラフト重合した(グラフト率70%)。
γ線の照射量を50kGy、CMS:キシレン=1:1溶液に浸漬する時間を4時間として、グラフト率を80%に変更した以外は、実施例1と同様にして、4級化の反応収率99%で所定のアニオン伝導電解質膜を得た。
γ線の照射量を30kGy、CMS:キシレン=1:1溶液に浸漬する時間を1時間として、グラフト率を50%に変更した以外は、実施例1と同様にして4級化の反応収率103%で所定のアニオン伝導電解質膜を得た。
実施例1で用いたアミン溶液を1,5−ジアザビシクロ[4.3.0]ノナ−5−エン(下記式I)のアセトン溶液(5モル%)に変更し、50℃の恒温槽中で16時間反応させた以外は、実施例1と同様にして4級化の反応収率94%で所定のアニオン伝導電解質膜を得た。
実施例1で用いたアミン溶液を1−メチルベンズイミダゾール(下記式I)のエタノール溶液(10モル%)に変更し、60℃の恒温槽中で42時間反応させた以外は、実施例1と同様にして4級化の反応収率87%で所定のアニオン伝導電解質膜を得た。
実施例1で用いたアミン溶液を2−t−ブチル−1,1,3,3−ペンタメチルグアニジン(下記式I)のアセトン溶液(10モル%)に変更し、50℃の恒温槽中で40時間反応させた以外は、実施例1と同様にして4級化の反応収率50%で所定のアニオン伝導電解質膜を得た。
実施例1で用いたアミン溶液を30%トリメチルアミン(下記式I)水溶液に変更し、室温で20時間反応させた以外は、実施例1と同様にして4級化の反応収率100%程度で所定のアニオン伝導電解質膜を得た。
実施例1で用いたアミン溶液を3,3−ジメチルブチルアミン(下記式I)のエタノール溶液(10モル%)に変更し、室温で20時間反応させた以外は、実施例1と同様にして4級化の反応収率93%で所定のアニオン伝導電解質膜を得た。
本発明において夫々作成したアニオン伝導電解質膜について、Cl型およびOH型の導電率と含水率を測定し、OH型についてはIECを算出した。結果を表‐1に示した。
アニオン伝導電解質膜においては、その耐久性を見積もる際に、耐熱性の評価が重要な指標となる。本発明で作製したアニオン伝導電解質膜のCl型およびOH型の熱重量分析結果を図4に示す。図から、Cl型では実施例1および4いずれにおいても比較例1よりも第一の熱分解温度が上昇しており、熱分解開始温度以降の重量減少も低く抑えられている。この傾向はOH型においてより顕著に表れ、実施例1〜3のイミダゾール化合物や、実施例4の有機強塩基では、比較例1のアルキルアミンに比べて著しく耐熱性が向上することがわかる。
Claims (6)
- フッ素系高分子、オレフィン系高分子又は芳香族系高分子からなる高分子基材と、ハロゲン化アルキル基を含むビニルモノマーを放射線グラフト重合して導入されたグラフト鎖と有機強塩基との反応で得られる4級塩と、を含むことを特徴とするアニオン伝導電解質膜。
- 前記ハロゲン化アルキル基を含むビニルモノマーが、クロロメチルスチレンであることを特徴とする請求項1記載のアニオン伝導電解質膜。
- 前記有機強塩基が、2−t−ブチル−1,1,3,3−ペンタメチルグアニジン、1,1,2,3,3−ペンタメチルグアニジン、7−メチル−1,5,7−トリアザビシクロ[4.4.0]デカ−5−エン、1,5−ジアザビシクロ[4.3.0]ノナ−5−エン、1−メチルベンズイミダゾール、1−メチルイミダゾールから選択される少なくとも1種である請求項1又は2に記載のアニオン伝導電解質膜。
- フッ素系高分子、オレフィン系高分子又は芳香族系高分子からなる高分子基材に、ハロゲン化アルキル基を含むビニルモノマーを放射線グラフト重合する工程と、放射線グラフト重合により導入された当該高分子基材上のグラフト鎖の少なくとも一部を、有機強塩基で4級化する工程と、前記4級化されたグラフト鎖のハロゲンアニオンを水酸化物イオンで置換する工程とから成るアニオン伝導電解質膜の製造方法。
- 前記ハロゲン化アルキル基を含むビニルモノマーがクロロメチルスチレンであることを特徴とする請求項4に記載のアニオン伝導電解質膜の製造方法。
- 前記有機強塩基が、2−t−ブチル−1,1,3,3−ペンタメチルグアニジン、1,1,2,3,3−ペンタメチルグアニジン、7−メチル−1,5,7−トリアザビシクロ[4.4.0]デカ−5−エン、1,5−ジアザビシクロ[4.3.0]ノナ−5−エン、1−メチルベンズイミダゾール、1−メチルイミダゾールから選択される少なくとも1種であることを特徴とする請求項4又は5に記載のアニオン伝導電解質膜の製造方法。
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JP2019522887A (ja) * | 2016-06-22 | 2019-08-15 | ビトゥイーン リツェンツ ゲーエムベーハー | 親水性膜相としてポリエチレングリコールを用いた架橋高安定アニオン交換ブレンド膜 |
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