JP2012074543A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2012074543A JP2012074543A JP2010218256A JP2010218256A JP2012074543A JP 2012074543 A JP2012074543 A JP 2012074543A JP 2010218256 A JP2010218256 A JP 2010218256A JP 2010218256 A JP2010218256 A JP 2010218256A JP 2012074543 A JP2012074543 A JP 2012074543A
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- plate electrode
- electrode
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Abstract
【解決手段】本発明の半導体装置は、基板上に形成された複数の半導体チップ5と、複数の半導体チップ5の電極間を接続するプレート電極1とを備える。プレート電極1は、半抜き加工により形成されたハーフカット部1aを有し、ハーフカット部1aの凸部側が半導体チップの電極と接合される。
【選択図】図9
Description
図11は、本発明の前提技術に係る半導体チップの配線構造を示すものであり、図11(a)はワイヤーボンディング、図11(b)はDLBを示している。
<構成>
図1は、複数の半導体チップを接続するために用いる本発明のプレート電極を示す断面図である。厚さtのプレート電極1は、厚みaの半抜き加工が施されたハーフカット部1aと、さらにハーフカット部1aの中でエンボス加工が施されたエンボス加工部1bとで構成される。なおプレート電極1は、後述するように所定パターンに抜き加工(フルカット)が施されている。プレート電極1の材料には低抵抗のCuやAlが用いられる。
図2〜図5は、プレート電極1の製造工程を示す断面図及び平面図である。以下に、図2〜図5に沿ってプレート電極1の製造工程を説明する。
本発明の半導体装置は、基板上に形成された複数の半導体チップ5と、複数の半導体チップ5の電極間を接続する所定パターンに抜き加工されたプレート電極1とを備え、プレート電極1は、半抜き加工により形成されたハーフカット部1aを有し、ハーフカット部1aの凸部側が半導体チップ5の電極と接合されるので、複数の半導体チップに対応する配線構造を備えた半導体装置を低コストで製造することができる。
Claims (8)
- 基板上に形成された複数の半導体チップと、
前記複数の半導体チップの電極間を接続する所定パターンに抜き加工されたプレート電極とを備え、
前記プレート電極は、半抜き加工により形成されたハーフカット部を有し、前記ハーフカット部の凸部側が前記半導体チップの前記電極と接合される、半導体装置。 - 前記プレート電極は、エンボス加工により前記ハーフカット部に形成された前記ハーフカット部の前記凸部側から突出するエンボス加工部をさらに有する、請求項1に記載の半導体装置。
- 前記半導体チップは外周部にガードリングを備え、
前記プレート電極の前記ハーフカット部外の部分と前記半導体チップの前記ガードリングとの間隔が0.6mm以上であることを特徴とする、請求項1又は2に記載の半導体装置。 - 前記半導体チップの前記ガードリングの角部分に対応する前記プレート電極の領域が除去された、請求項3に記載の半導体装置。
- 前記ハーフカット部の凸部の高さは、前記プレート電極の厚みの半分以下である、請求項1〜4のいずれかに記載の半導体装置。
- 直下に前記半導体チップが存在しない前記プレート電極の領域上に設けられた電極ポストと、
前記電極ポストに接続された外部電極とをさらに備える、請求項1〜5のいずれかに記載の半導体装置。 - 前記電極ポストの周辺に位置する前記プレート電極の少なくとも一部が除去された、請求項6に記載の半導体装置。
- 前記半導体チップはワイドバンドギャップ半導体で形成された、請求項1〜7のいずれかに記載の半導体装置。
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JP2010218256A JP5414644B2 (ja) | 2010-09-29 | 2010-09-29 | 半導体装置 |
US13/150,716 US8823151B2 (en) | 2010-09-29 | 2011-06-01 | Semiconductor device |
CN201110198380.0A CN102437138B (zh) | 2010-09-29 | 2011-07-15 | 半导体装置 |
DE102011082781.1A DE102011082781B4 (de) | 2010-09-29 | 2011-09-15 | Halbleitervorrichtung mit einer plattenelektrode zum verbinden einer mehrzahl an halbleiterchips |
US14/268,219 US10529656B2 (en) | 2010-09-29 | 2014-05-02 | Semiconductor device |
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JP2014082384A (ja) * | 2012-10-17 | 2014-05-08 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
DE102013225135A1 (de) | 2013-02-06 | 2014-08-07 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zu deren Herstellung |
DE102013219959A1 (de) | 2013-02-06 | 2014-08-07 | Mitsubishi Electric Corp. | Halbleitervorrichtung und Verfahren zum Herstellen derselben |
WO2015107871A1 (ja) * | 2014-01-15 | 2015-07-23 | パナソニックIpマネジメント株式会社 | 半導体装置 |
JP6346717B1 (ja) * | 2017-02-20 | 2018-06-20 | 新電元工業株式会社 | 電子装置及び接続体 |
US10727163B2 (en) | 2016-07-26 | 2020-07-28 | Mitsubishi Electric Corporation | Semiconductor device |
WO2023068096A1 (ja) * | 2021-10-22 | 2023-04-27 | 富士電機株式会社 | 半導体モジュール及び半導体モジュールの製造方法 |
JP7531353B2 (ja) | 2020-09-17 | 2024-08-09 | Koa株式会社 | 端子接続構造及び電子部品 |
US12131980B2 (en) | 2019-10-15 | 2024-10-29 | Fuji Electric Co., Ltd. | Semiconductor module |
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CN109287130B (zh) | 2017-05-19 | 2022-06-17 | 新电元工业株式会社 | 电子模块、引线框以及电子模块的制造方法 |
US11309273B2 (en) | 2017-05-19 | 2022-04-19 | Shindengen Electric Manufacturing Co., Ltd. | Electronic module |
CN112259516B (zh) * | 2019-07-22 | 2024-08-23 | 无锡华润华晶微电子有限公司 | 半导体封装结构 |
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