JP2011524634A - サブアパーチャ反応性原子エッチングを用いて構成部品を前処理することによって、半導体製造ユニットにおける生産量を高めると共にダウンタイムを減らす方法 - Google Patents
サブアパーチャ反応性原子エッチングを用いて構成部品を前処理することによって、半導体製造ユニットにおける生産量を高めると共にダウンタイムを減らす方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000007781 pre-processing Methods 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title abstract description 31
- 239000004065 semiconductor Substances 0.000 title abstract description 10
- 238000005530 etching Methods 0.000 title 1
- 239000007788 liquid Substances 0.000 claims description 53
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 25
- 229910002804 graphite Inorganic materials 0.000 claims description 21
- 239000010439 graphite Substances 0.000 claims description 21
- 239000011148 porous material Substances 0.000 claims description 11
- 229910021426 porous silicon Inorganic materials 0.000 claims description 10
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000007833 carbon precursor Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- 238000000197 pyrolysis Methods 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 12
- 238000002604 ultrasonography Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 235000011194 food seasoning agent Nutrition 0.000 description 3
- 238000005469 granulation Methods 0.000 description 3
- 230000003179 granulation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001687 destabilization Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012713 reactive precursor Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
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- C—CHEMISTRY; METALLURGY
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5346—Dry etching
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3817—Carbides
- C04B2235/3826—Silicon carbides
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/614—Gas infiltration of green bodies or pre-forms
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49718—Repairing
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
互作用から生じる生成物を取り除く排気管132を有する。他の実施形態において、プラズマトーチと構成部品に対して個別のボックスは、存在しなくてもよい。
[実施例]
前処理技術の研究に8つのIDM定義(IDM−defined)の重要部品試料が用
いられた。これらの電極は全て、ポコグラファイト(Poco Graphite)社のZEE−2材料から製造された。そのうちの2つは、標準掃引(standard swept)50kHz超音波を用いて前処理され、2つは、上記のプラズマ処理を用いて前処理され、2つは、プラズマ処理と標準掃引40kHz超音波の組み合わせを用いて前処理され、2つは、プラズマ処理と上記の強化超音波/メガソニックの組み合わせを用いて前処理された。プラズマ処理と標準掃引40kHz超音波の組み合わせ処理を受ける2つの試料では、試料は、60℃(140°F)にした超純水(17MΩの抵抗を有する)中に置かれた。前記部品試料を40kHzの周波数で稼働する超音波エネルギに約30分間暴露させた。次にエネルギをオフにすることによって、前記部品を更に30分間浸漬させた後、無菌の乾燥空気で乾燥した。次に乾燥部品試料を101.67℃(215°F)で稼働する炉内に約1時間置いた後、引き続き218.33℃(425°F)で更に2時間加熱した。前記部品試料を炉から取り出し、窒素を吹き付けた後、試験まで保存すべく二重真空パックに詰めた。プラズマ処理と強化超音波/メガソニックエネルギで前処理された2つの試料の工程は、試料が40kHzよりはむしろ80kHzで稼働する2回目の超音波エネルギに暴露された以外は同じであった。次にグレースケールと比較するテープ法を用いて、8つのコンポーネント試料を残存微粒子について測定した。図5は、結果のグラフ図である。
Claims (6)
- グラファイト部品の表面であるグラファイト部品表面を前処理する方法であって、前記方法は、
放電を生じさせるプラズマトーチを備えたプラズマ処理室内に前記グラファイト部品を設置する工程と;
前記グラファイト部品表面上にある実質的に全てのグラファイト微粒子が、前記グラファイト部品表面から除去されるように、前記グラファイト部品を前記プラズマトーチからの前記放電による反応性原子プラズマ処理にかける工程と;
コンピュータ制御システムを用いることによって前記プラズマトーチからの放電率を制御する工程と
を有する、方法。 - 前記方法は更に、前記グラファイト部品を次の前処理段階にかける工程を有し、
前記次の前処理段階は、
液体媒体を充填した容器内に前記グラファイト部品を設置する工程であって、前記容器は、変換器に接続された超音波/メガソニック発生器と連通することと;
周波数を有するエネルギ波に前記グラファイト部品をさらすことと
を有する、
請求項1記載の方法。 - 前記エネルギ波の周波数は、40kHzである、
請求項2記載の方法。 - 前記エネルギ波の周波数は、80kHzである、
請求項2記載の方法。 - 前記液体媒体は、フロン、炭化水素、および水からなる群から選択される、
請求項2記載の方法。 - 高密度炭化ケイ素部品の表面を前処理する方法であって、前記方法は、
放電を生じさせるプラズマトーチを備えたプラズマ処理室内に前記高密度炭化ケイ素部品を設置する工程と;
前記高密度炭化ケイ素部品を前記プラズマトーチからの前記放電による反応性原子プラズマ処理にかける工程と;
コンピュータ制御システムを用いて前記プラズマトーチからの放電率を制御する工程とを有し、
前記高密度炭化ケイ素部品は、
全体が炭化ケイ素から形成されると共に開放多孔性を有する多孔質炭化ケイ素予備成形物を提供する工程であって、前記多孔質炭化ケイ素予備成形物が、網型グラファイト成形体から形成されることと;
前記多孔質炭化ケイ素予備成形物内の相当数の孔を、炭素前駆体で充填することによって、充填された充填炭化ケイ素予備成形物を形成する工程と;
前記充填炭化ケイ素予備成形物を、予め選択された熱分解温度で加熱することによって、前記多孔質炭化ケイ素予備成形物の孔内に、炭素質多孔質構造を形成する工程と;
前記炭素質多孔質構造をケイ素に接触させることによって、前記炭素質多孔質構造を通じて前記ケイ素を拡散させ、且つ前記多孔質炭化ケイ素予備成形物の孔内に含有される炭素と反応させる工程であって、前記多孔質炭化ケイ素予備成形物の孔内に炭化ケイ素の第2相を形成することによって、結果として得られる前記高密度炭化ケイ素部品は、炭化ケイ素によって高密度化され、且つ前記多孔質炭化ケイ素予備成形物よりも低い多孔性を示
し、且つ炭化ケイ素複合材料であることと
によって生成される、方法。
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US5992808P | 2008-06-09 | 2008-06-09 | |
US61/059,928 | 2008-06-09 | ||
PCT/US2009/045897 WO2009151994A1 (en) | 2008-06-09 | 2009-06-02 | A method to increase yield and reduce down time in semiconductor fabrication units by preconditioning components using sub-aperture reactive atom etch |
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US (1) | US8721906B2 (ja) |
EP (1) | EP2311075A1 (ja) |
JP (1) | JP2011524634A (ja) |
KR (1) | KR20110044195A (ja) |
TW (1) | TW201002616A (ja) |
WO (1) | WO2009151994A1 (ja) |
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JP5415853B2 (ja) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
WO2011133417A2 (en) * | 2010-04-21 | 2011-10-27 | Entegris, Inc. | Coated graphite article and reactive ion etch manufacturing and refurbishment of graphite article |
CN102728582B (zh) * | 2012-07-06 | 2014-03-05 | 宁夏隆基硅材料有限公司 | 一种直拉法生长单晶硅用石墨件的清洗方法 |
JP2024517697A (ja) * | 2021-04-26 | 2024-04-23 | エレメンタル・サイエンティフィック・インコーポレイテッド | フレア出口を有する誘導結合プラズマトーチ構造 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01197363A (ja) * | 1988-02-01 | 1989-08-09 | Mitsui Eng & Shipbuild Co Ltd | 黒鉛製部材の清浄化処理方法 |
JPH11145148A (ja) * | 1997-11-06 | 1999-05-28 | Tdk Corp | 熱プラズマアニール装置およびアニール方法 |
JP2004158226A (ja) * | 2002-11-05 | 2004-06-03 | Toyo Tanso Kk | イオン注入装置用黒鉛材料及びこれを用いたイオン注入装置用黒鉛部材 |
JP2005320236A (ja) * | 2004-05-03 | 2005-11-17 | Snecma Propulsion Solide | 不透過性耐熱構造複合材料から部品を製造する方法 |
JP2007511911A (ja) * | 2003-11-14 | 2007-05-10 | ラム リサーチ コーポレーション | 遊離炭素を取り除くために扱われた半導体基板処理装置の炭化シリコン部品 |
JP2008053398A (ja) * | 2006-08-24 | 2008-03-06 | Fuji Electric Holdings Co Ltd | 炭化珪素半導体装置の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3884653T2 (de) * | 1987-04-03 | 1994-02-03 | Fujitsu Ltd | Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant. |
US5937878A (en) | 1997-12-18 | 1999-08-17 | Vanguard International Semiconductor Corporation | Apparatus for removing particles from a wafer and for cleaning the wafer |
US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
US6660177B2 (en) | 2001-11-07 | 2003-12-09 | Rapt Industries Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
KR100493016B1 (ko) * | 2002-03-23 | 2005-06-07 | 삼성전자주식회사 | 반도체 소자 제조에 이용되는 메가소닉 세정장치 |
US7371992B2 (en) | 2003-03-07 | 2008-05-13 | Rapt Industries, Inc. | Method for non-contact cleaning of a surface |
US7304263B2 (en) | 2003-08-14 | 2007-12-04 | Rapt Industries, Inc. | Systems and methods utilizing an aperture with a reactive atom plasma torch |
US7799375B2 (en) | 2004-06-30 | 2010-09-21 | Poco Graphite, Inc. | Process for the manufacturing of dense silicon carbide |
TWI240328B (en) * | 2004-08-27 | 2005-09-21 | Univ Nat Cheng Kung | Pretreatment process of substrate in micro-nano imprinting technology |
JP4804824B2 (ja) * | 2005-07-27 | 2011-11-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US8327861B2 (en) * | 2006-12-19 | 2012-12-11 | Lam Research Corporation | Megasonic precision cleaning of semiconductor process equipment components and parts |
JP4565095B2 (ja) | 2007-09-03 | 2010-10-20 | 独立行政法人産業技術総合研究所 | マイクロプラズマcvd装置 |
-
2009
- 2009-06-02 WO PCT/US2009/045897 patent/WO2009151994A1/en active Application Filing
- 2009-06-02 US US12/997,205 patent/US8721906B2/en not_active Expired - Fee Related
- 2009-06-02 KR KR1020117000353A patent/KR20110044195A/ko not_active Application Discontinuation
- 2009-06-02 JP JP2011513572A patent/JP2011524634A/ja active Pending
- 2009-06-02 EP EP09763285A patent/EP2311075A1/en not_active Withdrawn
- 2009-06-09 TW TW098119279A patent/TW201002616A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01197363A (ja) * | 1988-02-01 | 1989-08-09 | Mitsui Eng & Shipbuild Co Ltd | 黒鉛製部材の清浄化処理方法 |
JPH11145148A (ja) * | 1997-11-06 | 1999-05-28 | Tdk Corp | 熱プラズマアニール装置およびアニール方法 |
JP2004158226A (ja) * | 2002-11-05 | 2004-06-03 | Toyo Tanso Kk | イオン注入装置用黒鉛材料及びこれを用いたイオン注入装置用黒鉛部材 |
JP2007511911A (ja) * | 2003-11-14 | 2007-05-10 | ラム リサーチ コーポレーション | 遊離炭素を取り除くために扱われた半導体基板処理装置の炭化シリコン部品 |
JP2005320236A (ja) * | 2004-05-03 | 2005-11-17 | Snecma Propulsion Solide | 不透過性耐熱構造複合材料から部品を製造する方法 |
JP2008053398A (ja) * | 2006-08-24 | 2008-03-06 | Fuji Electric Holdings Co Ltd | 炭化珪素半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US8721906B2 (en) | 2014-05-13 |
US20110239429A1 (en) | 2011-10-06 |
TW201002616A (en) | 2010-01-16 |
EP2311075A1 (en) | 2011-04-20 |
WO2009151994A1 (en) | 2009-12-17 |
KR20110044195A (ko) | 2011-04-28 |
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