JP2011129758A - Substrate processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing device which enhances chemical solution removal effect while making design common in terms of dimensions of a chemical solution processing chamber when performing cleaning processing on a substrate after final chemical solution processing. <P>SOLUTION: The substrate processing device 300 includes a chemical solution processing chamber 36 configured to perform the final chemical solution processing on the substrate W being conveyed and a substitute washing chamber 40 installed downstream from the chemical solution processing chamber 36 in a substrate conveying direction and configured to perform substitute washing processing on the substrate W. Further, the substrate processing device includes upper and lower air knives 37 and 37 provided in the chemical solution processing chamber 36 and configured to remove a chemical solution sticking on the substrate by blowing high-pressure gas to the substrate W having been subjected to the chemical solution processing, and upper and lower air knives 71 and 71 provided in a chemical solution removal region 73 adjacent to the chemical solution processing chamber 36 downstream therefrom in the substrate conveying direction and configured to further remove the chemical solution sticking on the substrate. After the chemical solution processing in the chemical solution processing chamber 36, the substitute washing processing is performed on the substrate having been subjected to the chemical solution removal by the two pairs of upper and lower knives 37 and 37, and 71 and 71. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to glass for liquid crystal display (LCD), plasma display (PDP), organic light emitting diode (OLED), field emission display (FED), vacuum fluorescent display (VFD), solar cell panel, etc. The final chemical treatment of chemical treatments such as resist stripping and etching is performed on various substrates such as substrates, glass / ceramic substrates for magnetic / optical disks, semiconductor wafers, and electronic device substrates, followed by cleaning treatment. The present invention relates to a substrate processing apparatus.

  For example, in the manufacturing process of devices such as LCDs and PDPs, when supplying various chemicals to the main surface of the substrate and performing chemical treatments such as resist stripping and etching, the substrate is first washed with water. (Circulating water washing processing unit) supplies cleaning water to the main surface of the substrate immediately after the chemical solution processing to replace the chemical solution on the substrate with cleaning water, and then in the direct water washing room (new water washing processing unit) Pure water is supplied to the main surface to wash the substrate, and then the substrate is dried. At this time, pure water (fresh water) is used for washing the substrate in the direct water washing room, and the water used in the direct water washing room is collected in a circulating water tank for washing the substrate in the replacement water washing room. By using it as washing water (circulated water), the amount of pure water used is reduced (see, for example, Patent Document 1).

  In addition, the water treatment section for washing the substrate after the chemical solution treatment is constituted by a replacement water washing chamber (first water washing portion), a second water washing chamber (second water washing portion), and a direct water washing chamber (third water washing portion), First, in the replacement flushing chamber, the water used in the second flushing chamber is collected in the first circulating water tank and used as the washing water, and the washing water is supplied to the main surface of the substrate immediately after the chemical solution treatment to supply the substrate. After the upper chemical solution is replaced with washing water, in the second washing room, the water used in the direct washing room is collected in the second circulating water tank and used as washing water, and the chemical solution on the main surface is washed. There is also used an apparatus in which a substrate replaced with water is washed with water, and finally, pure water is supplied to the main surface of the substrate in a direct water washing chamber to finish and wash the substrate (see, for example, Patent Document 2). .

JP-A-11-162918 (page 4-6, FIG. 1) JP-A-10-284379 (page 3-4, FIG. 1)

  FIG. 9 shows an example of a schematic configuration of a conventional substrate processing apparatus 700. FIG. 9 schematically shows the substrate processing apparatus 700.

  The substrate processing apparatus 700 includes a chemical processing unit 1 that performs a final chemical processing among a plurality of chemical processings, and a replacement water washing unit (first water washing unit) 5 disposed on the subsequent stage side. A second water washing unit 3 (only a part is shown), a direct water washing unit (not shown), and a drying treatment unit (not shown) are connected in this order in the subsequent stage of the replacement water washing unit 5.

  The final chemical solution processing unit 1 includes a chemical solution tank 31 for storing a chemical solution, a plurality of chemical solution supply spray nozzles 32 and a pump 35 for supplying the chemical solution to the substrate 1, and a chemical solution supply spray for storing the chemical solution stored in the chemical solution tank 31. And a chemical supply path 33 for supplying the liquid to the nozzle 32.

  A plurality of chemical liquid supply spray nozzles 32 are provided in parallel to the substrate transport direction, and the spray nozzle 32 has a plurality of discharge ports formed in a line in the substrate transport direction. The chemical solution is jetted onto the upper surface of the substrate W that is transported by a transport roller (not shown) that reciprocates the substrate W that has been transported into the horizontal direction. These chemical liquid supply spray nozzles 32 are disposed in the chemical liquid processing chamber 36. In addition, in the vicinity of the substrate carry-out port 70 in the chemical solution processing chamber 36, a pair of high-pressure gases are ejected to both surfaces of the substrate W to remove the chemical solution adhering to both surfaces of the substrate W. Upper and lower air knives 37 are provided. The pair of upper and lower air knives 37 and 37 is connected to an air supply pipe 38 which is connected to an air supply channel, and the upper and lower air knives 37 and 37 are placed on the substrate W across the substrate to be transported.・ Air is ejected diagonally in the opposite direction to the substrate transport direction on the bottom surface. A circulation drainage channel 76 is provided at the bottom of the chemical solution processing chamber 36 for discharging the used chemical solution that has flowed down to the inner bottom of the chemical solution processing chamber 36. The circulation drainage channel 76 is connected to the chemical solution tank 31. Communication connection is established.

  The replacement flush unit 5 is installed adjacent to the chemical treatment chamber 36 of the chemical treatment unit 1 and has a substrate carry-in port 42 and a substrate carry-out port 43. A plurality of transport rollers (not shown) that support the substrate W after the chemical solution treatment that has been loaded in a posture inclined with respect to a horizontal plane in a direction orthogonal to the substrate transport direction and reciprocate horizontally in the replacement washing chamber 40. ), A slit nozzle that is disposed in the vicinity of the substrate carry-in inlet 42 in the replacement water washing chamber 40 and discharges the wash water in the form of a curtain over the entire width direction of the substrate W onto the upper surface of the substrate W carried into the replacement water washing chamber 40. 44, and an upper spray nozzle 45 and a lower spray nozzle 46 that discharge cleaning water to the upper and lower surfaces of the substrate W that reciprocates in the horizontal direction in the replacement water washing chamber 40, respectively. . A plurality of upper spray nozzles 45 and lower spray nozzles 46 are provided in parallel to each other along the substrate transport direction, and a plurality of discharge ports are formed in a row in each of the spray nozzles 45 and 46 in the substrate transport direction. Has been. A drainage channel 47 for discharging used washing water that has flowed down to the inner bottom of the replacement water washing chamber 40 is provided at the bottom of the replacement water washing chamber 40. A washing water tank 49 is provided at the bottom of the replacement washing chamber 40, and a pure water supply path 50 that is connected to a pure water (fresh water) supply source is connected to the bottom. Further, a flush water supply path 61 provided at the bottom of the flush chamber 60 of the second flush unit 3 is connected in communication. A washing water supply passage 53 is connected to the bottom of the washing water tank 49 and is connected to the slit nozzle 44 in the replacement washing chamber 40 with a liquid feed pump 51 interposed therebetween. Further, at the bottom of the washing water tank 49, a feeding water pump 52 is provided, and a washing water supply passage 54 connected to each of the upper spray nozzle 45 and the lower spray nozzle 46 in the replacement washing chamber 40 is connected to each other. Has been.

  Although only a part of the configuration of the second water washing section is illustrated, it is the same as the first water washing section 5.

  As described above, conventionally, a high-pressure gas is ejected from the pair of upper and lower air knives 37 and 37 provided in the vicinity of the substrate carry-out port 70 in the chemical processing chamber 36 onto both surfaces of the substrate W that has been subjected to the chemical processing. Although the chemical solution attached to both surfaces of the substrate W was removed, a sufficient removal effect was not obtained, and as a result, the amount of the chemical solution taken out of the chemical treatment chamber 36 could not be sufficiently reduced. .

  Therefore, in order to enhance the removal effect of the chemical solution adhering to both surfaces of the substrate W, as shown in FIG. 10, the pair of upper and lower air knives 37 and 37 are already in the chemical treatment chamber 36 adjacent to the downstream side in the substrate transport direction. A configuration in which a pair of upper and lower air knives 39 and 39 are provided close to each other, and a high-pressure gas is ejected from the two pairs of upper and lower air knives 37, 37, 39 and 39, thereby removing the chemical solution adhering to both surfaces of the substrate W. Is also possible.

  FIG. 10 schematically shows a main part of a configuration according to an improved example of the conventional substrate processing apparatus 700 shown in FIG.

  However, when two pairs of air knives are arranged close to each other as in the substrate processing apparatus 800 shown in FIG. 10, the air flow of the ejected gas from the air knife 37 located on the upstream side in the substrate transport direction and above the substrate is generated. On the upper surface of the substrate to be transported, it is pushed up by the gas ejected from the air knife 39 located downstream in the substrate transport direction and above the substrate. Similarly, the air flow of the gas ejected from the air knife 37 located upstream in the substrate transport direction and below the substrate is located downstream from the substrate transport direction and below the substrate under the bottom surface of the substrate being transported. It is pushed up by the gas blown from the air knife 39. As a result, the effect of removing the chemical solution is reduced, and only the amount of the chemical solution taken out of the chemical solution processing chamber 36 can be reduced to the same extent as the pair of upper and lower air knives.

  In order to avoid the effect of the gas ejected from the pair of upper and lower air knives 39 on the downstream side of the substrate transport direction, the separation distance in the substrate transport direction between the positions of the two pairs of upper and lower air knives in the chemical processing chamber is set. However, it is necessary to extend the length of the chemical processing chamber in which the two pairs of upper and lower air knives are installed in the substrate transport direction. Here, the normal substrate processing apparatus is composed of a plurality of chemical processing units in order to perform a plurality of chemical processing, but only the chemical processing chamber of the chemical processing unit that performs the final chemical processing is used for the chemicals of other chemical processing units. It is necessary to design and manufacture with dimensions different from the processing chamber. For this reason, common design of a plurality of chemical solution processing chambers becomes impossible, and design and manufacturing costs increase.

  In FIG. 10, an example in which two pairs of upper and lower air knives are used as high-pressure gas jetting means for removing a chemical solution has been described, but the same applies even when two pairs of air nozzles are used instead of the two pairs of upper and lower air knives. Problems occur.

  The present invention has been made in view of the circumstances as described above, and in the case of performing the final chemical processing among the chemical processing such as resist stripping and etching, and then performing the cleaning processing, An object of the present invention is to provide a substrate processing apparatus capable of enhancing the effect of removing a chemical solution while achieving common use of dimensions.

  According to the first aspect of the present invention, there is provided a chemical processing chamber for performing a final chemical processing on a substrate, a substrate transporting means disposed in the chemical processing chamber for transporting the substrate, and a substrate disposed in the chemical processing chamber. A chemical solution supplying means for supplying a chemical solution for the final chemical solution treatment to the main surface of the substrate conveyed by the conveyance device, and a water washing process for the substrate after the final chemical solution treatment that is installed downstream of the chemical solution treatment chamber in the substrate conveyance direction Cleaning water for supplying cleaning water to the main surface of the substrate transported by the substrate transporting means disposed in the flushing chamber, substrate transporting means disposed in the flushing chamber, and transporting the substrate A substrate processing apparatus including a supply unit is configured as follows. That is, the substrate processing apparatus is provided in the chemical processing chamber and has a first high-pressure gas jetting unit that removes the chemical attached to the substrate by jetting high-pressure gas to the substrate that has finished the final chemical processing. The second high-pressure gas is further provided in the chemical solution removal region adjacent to the chemical solution processing chamber on the downstream side in the substrate transport direction, and further removes the chemical solution attached to the substrate from which the chemical solution has been removed by the first high-pressure gas ejection means. And a squirting means, and a water rinsing process is performed on the substrate from which the chemical liquid has been removed by the first and second high-pressure gas ejection means after the final chemical liquid processing is performed in the chemical liquid processing chamber. To do.

  According to a second aspect of the present invention, in the substrate processing apparatus according to the first aspect of the present invention, the washing chamber includes a chemical solution removal region upstream of the substrate conveyance direction and a washing treatment region downstream of the substrate conveyance direction. A partition member for partitioning into two regions is provided, and the second high-pressure gas ejecting means is provided in the chemical solution removal region in the washing chamber.

  According to a third aspect of the present invention, there is provided the substrate processing apparatus according to the second aspect, wherein the washing treatment region has a length in the substrate transport direction shorter than a dimension of the substrate in the substrate transport direction, It is a closed form having an outlet from which the substrate is unloaded, and the substrate transporting means transports the substrate that has been carried into the washing process region continuously in one direction and unloads it from the washing process region, The cleaning water supply means is disposed in the vicinity of the entrance in the washing treatment area so as to intersect the substrate transport direction, and a slit nozzle that discharges cleaning water to the main surface of the substrate over the entire width direction of the substrate; The slit nozzle is disposed downstream of the slit nozzle in the substrate transport direction so as to intersect the substrate transport direction, and the chemical liquid on the substrate flows downstream in the substrate transport direction. A high-pressure nozzle that discharges cleaning water to the main surface of the substrate at a high pressure so that the chemical solution on the substrate is rapidly replaced with the cleaning water. It is arranged so as to intersect the transport direction, and the gas is directly directed to the main surface of the substrate so as to prevent the chemical solution from adhering to the substrate and being taken out of the washing treatment area, or obliquely with respect to the substrate transport direction. A gas nozzle that jets in the reverse direction and drainage means for discharging the wash water that has flowed down to the inner bottom of the washing treatment area are further provided.

  According to a fourth aspect of the present invention, there is provided the substrate processing apparatus according to the third aspect, wherein the slit nozzle has a slit-like discharge port along the longitudinal direction, and the cleaning water is supplied from the slit-like discharge port to the main surface of the substrate. Is discharged in the form of a curtain in a direction inclined to the downstream side in the substrate transport direction with respect to the directly downward direction.

  According to a fifth aspect of the present invention, in the substrate processing apparatus according to the third or fourth aspect, the high-pressure nozzle is a plurality of discharge ports arranged in parallel in the direction intersecting the substrate transport direction. It is characterized by being a series high-density fan spray nozzle that discharges cleaning water from each discharge port in a fan shape at a high pressure.

  A sixth aspect of the present invention is the substrate processing apparatus according to the third or fourth aspect, wherein the high-pressure nozzle is a plurality of discharge ports arranged in parallel in the direction intersecting the substrate transport direction. And a two-fluid spray nozzle that mists and discharges wash water from each discharge port with a gas pressure.

  According to a seventh aspect of the present invention, in the substrate processing apparatus according to any one of the third to sixth aspects, the mist of cleaning water discharged from the discharge port is prevented from scattering to the high pressure nozzle. The hood is attached.

  The invention according to claim 8 is the substrate processing apparatus according to claim 7, further comprising a mist suction device that sucks and discharges mist of the cleaning water through the hood.

  A ninth aspect of the present invention is the substrate processing apparatus according to any one of the third to seventh aspects, wherein a part of the cleaning water used and recovered in a second water-washing chamber provided on the rear side of the water-washing chamber. Is supplied to the slit nozzle and the high-pressure nozzle.

  A tenth aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein a chemical liquid removal chamber independent of the water washing chamber is installed between the chemical liquid processing chamber and the water washing chamber, The second high-pressure gas jetting means is provided to configure the chemical solution removal region.

  According to an eleventh aspect of the present invention, there is provided the substrate processing apparatus according to the tenth aspect, wherein a plurality of the chemical solution removal chambers are connected between the chemical solution treatment chamber and the water washing chamber, and a high-pressure gas is ejected into each chemical solution removal chamber. A means is provided to configure the chemical solution removal region.

  The invention according to claim 12 is the substrate processing apparatus according to claim 10 or 11, wherein the washing chamber has a length in the substrate transport direction shorter than a dimension of the substrate in the substrate transport direction, and the substrate is loaded. And the substrate transport means is configured to continuously transport the substrate that has been carried into the washing chamber in one direction and carry it out of the washing chamber. The supply means is disposed near the entrance of the washing chamber so as to intersect the substrate transport direction, and a slit nozzle that discharges cleaning water over the entire width direction of the substrate to the main surface of the substrate, and from the slit nozzle Located on the downstream side in the substrate transport direction so as to intersect the substrate transport direction, and prevents the chemical on the substrate from flowing downstream in the substrate transport direction. A high-pressure nozzle that discharges the cleaning water to the main surface of the substrate at a high pressure so that the chemical solution is rapidly replaced with the cleaning water, and intersects the substrate transport direction at the outlet side in the washing chamber. A gas nozzle that jets gas to the main surface of the substrate in a direction directly below or obliquely opposite to the substrate transport direction so as to prevent the chemical solution from adhering to the substrate and being taken out of the washing chamber, And a drainage means for discharging the wash water flowing down to the inner bottom of the flush chamber.

  According to a thirteenth aspect of the present invention, in the substrate processing apparatus of the twelfth aspect, the slit nozzle has a slit-shaped discharge port along the longitudinal direction, and the cleaning water is supplied from the slit-shaped discharge port to the main surface of the substrate. Is discharged in the form of a curtain in a direction inclined to the downstream side in the substrate transport direction with respect to the directly downward direction.

  According to a fourteenth aspect of the present invention, in the substrate processing apparatus of the twelfth or thirteenth aspect, the high-pressure nozzles are a plurality of discharge ports that are arranged in close proximity to each other in a direction intersecting the substrate transport direction It is characterized by being a series high-density fan spray nozzle that discharges cleaning water from each discharge port in a fan shape at a high pressure.

  According to a fifteenth aspect of the present invention, in the substrate processing apparatus according to the twelfth or fourteenth aspect, the high-pressure nozzles are a plurality of discharge ports that are arranged adjacent to each other in a direction intersecting the substrate transport direction. And a two-fluid spray nozzle that mists and discharges wash water from each discharge port with a gas pressure.

  According to a sixteenth aspect of the present invention, in the substrate processing apparatus according to any one of the twelfth to fifteenth aspects, the mist of cleaning water discharged from the discharge port is prevented from scattering to the high pressure nozzle. The hood is attached.

  The invention according to claim 17 is the substrate processing apparatus according to claim 16, further comprising a mist suction device that sucks and discharges mist of cleaning water through the hood.

  According to an eighteenth aspect of the present invention, in the substrate processing apparatus according to any one of the twelfth to seventeenth aspects, a part of the cleaning water used and recovered in a second rinsing chamber provided on the rear side of the rinsing chamber. Is supplied to the slit nozzle and the high-pressure nozzle.

  According to a nineteenth aspect of the present invention, in the substrate processing apparatus according to any one of the first to eighteenth aspects, the first and second high-pressure gas jetting units are arranged with the substrate interposed therebetween, and both sides of the substrate are arranged. It is a pair of upper and lower air knives or air nozzles for removing the attached chemical liquid by jetting high-pressure gas to the head.

  In the substrate processing apparatus according to the first aspect of the present invention, the first and second high-pressure gas ejection means are divided and installed in the chemical solution processing chamber 6 and the chemical solution removal region 73, respectively, and the first stage The removal of the chemical solution by the gas ejected from the first high-pressure gas ejecting means is spaced apart in the substrate transport direction by a distance that is not inhibited by the ejected gas from the second high-pressure gas ejecting means at the subsequent stage. For this reason, the overlapped chemical solution removal effect by the jet gas from the first and second high-pressure gas jet means is obtained, and the amount of the chemical solution taken out of the chemical solution removal region can be reduced. Thereby, the usage-amount of the washing water which should be used for the washing process performed after the last chemical | medical solution process can be reduced, and the reduction of the running cost of the whole substrate processing apparatus can be aimed at by extension. In addition, for example, two pairs of upper and lower air knives are used as the first and second high-pressure gas jetting means, and these two pairs of upper and lower air knives are inserted into the chemical liquid processing chamber of the chemical liquid processing unit that performs the final chemical liquid processing from the air knife in the previous stage. In order to dispose the two chemicals in the substrate transport direction by a distance that does not impede the chemical removal by the jet gas from the subsequent air knife, only the chemical treatment chamber of the chemical treatment unit that performs the final chemical treatment is used. It is no longer necessary to design and manufacture with a longer dimension in the substrate transport direction than the chemical processing chambers of other chemical processing units, and the design and manufacturing can be shared with the chemical processing chambers of other chemical processing units. Reduction in design / manufacturing cost of the chemical processing chamber can be achieved.

  In the substrate processing apparatus according to the second aspect of the present invention, the chemical liquid removed from the substrate W by the gas ejected from the second high-pressure gas ejection means remains in the chemical liquid removal region of the washing chamber by the partition member, and is downstream in the substrate transport direction. Scattering into the water-washing treatment region located on the side is effectively prevented.

  In the substrate processing apparatus of the invention according to claim 3 or claim 12, the width direction of the substrate from the slit nozzle provided in the vicinity of the inlet with respect to the substrate after the chemical solution processing carried into the washing processing region or the washing chamber. By discharging the cleaning water over the entire surface, the remaining chemical solution on the substrate, the amount of which has been reduced by the high-pressure gas from the first and second high-pressure gas ejection means, is diluted with the cleaning water and washed away. The liquid mixture of the chemical solution and the cleaning water remaining on the substrate after passing through the position where the slit nozzle is disposed is moved forward by the cleaning water discharged at high pressure from the high-pressure nozzle provided on the front side of the slit nozzle to the main surface of the substrate. The flow to is blocked. Since the substrate moves forward with the forward flow of the diluted chemical solution blocked in this way, the chemical solution on the substrate is rapidly replaced with cleaning water while the substrate passes through the high pressure nozzle arrangement position. The And before the board | substrate is carried out from the inside of a water-washing area | region or a water-washing chamber, the liquid on a board | substrate is blocked | prevented by the pressure of the gas ejected from a gas nozzle to the main surface of a board | substrate. As a result, the chemical solution adheres to the substrate and is effectively prevented from being taken out of the washing treatment area or the washing room. A series of these water washing processes is performed in one direction in the water washing treatment area or the water washing chamber after the substrate is carried into the water washing treatment area or the water washing room in which the length in the substrate carrying direction is shorter than the dimension in the substrate carrying direction of the substrate. Then, it is carried out within a short time until it is transported and carried out of the washing process area or the washing room. In addition, since the chemical solution on the substrate is rapidly replaced with the cleaning water by the cleaning water discharged from the high-pressure nozzle to the main surface of the substrate at a high pressure, the cleaning process is performed efficiently by using a relatively small amount of the cleaning water. . And the wash water which flowed down to the inner bottom part of the washing process area or the washing room is discharged by the drainage means.

  Therefore, when the substrate processing apparatus of the invention according to claim 3 or 12 is used, the amount of pure water used when the substrate after chemical treatment is washed with water can be greatly reduced and the amount of drainage can be reduced. In addition, the washing time can be greatly shortened.

  In the substrate processing apparatus of the invention according to claim 4 or claim 13, with respect to the substrate after chemical treatment carried into the washing process region or the washing chamber, the slit-shaped discharge port of the slit nozzle extends over the entire width direction of the substrate. By discharging the cleaning water in a curtain shape, the chemical solution on the substrate can be efficiently diluted with the cleaning water and washed away.

  In the substrate processing apparatus of the invention according to claims 5 and 14, the chemical solution remaining on the substrate can be obtained by discharging cleaning water at a high pressure from a plurality of discharge ports of the series high-density fan spray nozzle to the main surface of the substrate. It is possible to reliably prevent the washing water mixture from flowing forward.

  In the substrate processing apparatus of the invention according to claims 6 and 15, the cleaning water is misted by a gas pressure such as air from a plurality of discharge ports of the two-fluid spray nozzle and discharged together with the gas onto the main surface of the substrate. Thus, it is possible to reliably prevent the mixed liquid remaining on the substrate and the cleaning water from flowing forward.

  In the substrate processing apparatus according to the seventh and sixteenth aspects of the present invention, cleaning water mist is generated when the cleaning water is discharged from the discharge port of the high-pressure nozzle at a high pressure, but the mist is prevented from being scattered by the hood. Can do.

  In the substrate processing apparatus of the invention according to claim 8 and claim 17, the mist of the cleaning water is sucked and discharged by the mist suction device, thereby preventing the mist of the cleaning water containing the chemical solution from reattaching to the substrate. be able to.

  In the substrate processing apparatus according to the ninth and eighteenth aspects of the invention, the utilization efficiency of pure water can be increased.

  In the substrate processing apparatus of the invention according to claim 10, the chemical liquid removed from the substrate W by the gas ejected from the second high-pressure gas ejection means remains in the chemical liquid removal region constituted by the chemical liquid removal chamber and is downstream in the substrate transport direction. Scattering into the flush chamber located on the side is effectively prevented.

  In the substrate processing apparatus according to the eleventh aspect of the present invention, it is possible to significantly reduce the amount of the chemical solution taken out of the chemical solution removal region constituted by a plurality of chemical solution processing chambers arranged in series.

  In the substrate processing apparatus according to the nineteenth aspect of the present invention, the effect of removing the chemical solution from the substrate can be obtained with a simple configuration.

1 is a schematic configuration diagram schematically showing a substrate processing apparatus 300 according to a first embodiment of the present invention. It is a schematic block diagram which shows typically the principal part of the substrate processing apparatus 400 which concerns on the modification of the 1st Embodiment of this invention. It is a schematic block diagram which shows typically the principal part of the substrate processing apparatus 500 which concerns on the 2nd Embodiment of this invention. It is a figure which shows one example of the high pressure nozzle which is a component of the substitution water washing part 5 of the substrate processing apparatus 500 shown in FIG. 3, Comprising: The typical front which looked at the serial high density fan-shaped spray nozzle from the downstream in the substrate conveyance direction FIG. It is a figure which shows one example of the high pressure nozzle which is a component of the substitution water washing part of the substrate processing apparatus 500 shown in FIG. 3, Comprising: It is the typical front view which looked at the 2 fluid spray nozzle from the front side in a substrate conveyance direction. . It is a typical side view which shows the mode of the process in the substituted water washing part 5 shown in FIG. It is a typical side view which shows the mode of the process in the substituted water washing part 5 shown in FIG. It is a schematic block diagram which shows typically the principal part of the substrate processing apparatus 600 which concerns on the modification of the 2nd Embodiment of this invention. It is a schematic block diagram which shows typically an example which concerns on the structure of the conventional substrate processing apparatus 700. FIG. It is a schematic block diagram which shows typically the principal part of the structure which concerns on the example of improvement of the conventional substrate processing apparatus 700 shown in FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 schematically shows a substrate processing apparatus 300 according to the first embodiment of the present invention. In addition, the same code | symbol is used also in FIG. 1 about the component and member which are the same as or correspond to the component and member shown in FIG.

  The substrate processing apparatus 300 includes a chemical processing unit 1 that performs a final chemical processing among a plurality of chemical processings, and a replacement water washing unit (first water washing unit) 5 disposed on the subsequent stage side. A second water washing unit 3 (only a part is shown), a direct water washing unit (not shown), and a drying treatment unit (not shown) are connected in this order in the subsequent stage of the replacement water washing unit 5.

  The final chemical solution processing unit 1 includes a chemical solution tank 31 for storing the chemical solution, a plurality of chemical solution supply spray nozzles 32 and a pump 35 for supplying the chemical solution to the substrate 1, and supplies the chemical solution stored in the chemical solution tank 31 to the chemical solution And a chemical solution supply path 33 for supplying liquid to the spray nozzle 32.

  A plurality of chemical solution supply spray nozzles 32 are provided in parallel to the substrate transport direction, and each spray nozzle 32 has a plurality of discharge ports formed in a row in the substrate transport direction. The chemical solution is jetted onto the upper surface of the substrate W that is transported by a transport roller (not shown) that reciprocates the substrate W that has been transported into the horizontal direction. These chemical liquid supply spray nozzles 32 are disposed in the chemical liquid processing chamber 36. In addition, in the vicinity of the substrate carry-out port 70 in the chemical solution processing chamber 36, a pair of high-pressure gases are ejected to both surfaces of the substrate W to remove the chemical solution adhering to both surfaces of the substrate W. Upper and lower air knives 37 are provided. The pair of upper and lower air knives 37 and 37 are connected to an air supply pipe 38 which is connected to an air supply channel. Air is transferred from the air knives 37 and 37 to the upper and lower surfaces of the substrate W. It is ejected obliquely in the opposite direction to the direction. A circulation drainage channel 76 is provided at the bottom of the chemical solution processing chamber 36 for discharging the used chemical solution that has flowed down to the inner bottom of the chemical solution processing chamber 36. The circulation drainage channel 76 is connected to the chemical solution tank 31. Communication connection is established.

  The replacement water washing unit 5 is installed adjacent to the chemical solution processing chamber 36 of the chemical solution processing unit 1, and includes a replacement water washing chamber (first washing chamber) 40 having a substrate carry-in port 42 and a substrate carry-out port 43. A pair of upper and lower air knives 71 and 71 for removing chemicals adhering to both surfaces of the substrate W by ejecting high-pressure gas to both surfaces of the substrate W disposed in the vicinity of the substrate carry-in port 42, and this replacement A plurality of transports for supporting the substrate W after chemical treatment carried into the rinsing chamber 40 in a posture inclined with respect to a horizontal plane in a direction orthogonal to the substrate transport direction and reciprocating in the horizontal direction in the replacement rinsing chamber 40. A roller (not shown) is disposed in the vicinity of the partition member 72 for partitioning the inside of the replacement water washing chamber 40 into two regions, a chemical solution removal region 73 and a water washing treatment region 74, and has been carried into the replacement water washing chamber 40. To top surface of substrate W A slit nozzle 44 that discharges purified water in the form of a curtain over the entire width direction of the substrate W, and an upper spray nozzle 45 that discharges cleaning water to both the upper and lower surfaces of the substrate W that reciprocates horizontally in the replacement water washing chamber 40. And a lower spray nozzle 46 and the like.

  The pair of upper and lower air knives 71 and 71 are connected to an air supply pipe 77 that is connected to an air supply channel, and air is transferred from the air knives 71 and 71 to the upper and lower surfaces of the substrate W in the substrate transport direction. Is ejected obliquely in the opposite direction.

  The slit nozzle 44 has a slit-like discharge port along its longitudinal direction. The slit nozzle 44 is disposed so as to be parallel to the upper surface of the substrate W and orthogonal to the substrate transport direction, and is inclined obliquely forward from the vertical direction. Then, from the slit-shaped discharge port of the slit nozzle 44, the cleaning water is curtained over the entire width direction of the substrate W onto the upper surface of the substrate W carried into the washing treatment area 74 of the replacement rinsing chamber 47, and immediately below it. The ink is discharged in a direction inclined to the downstream side in the substrate transport direction with respect to the direction. In place of the slit nozzle, a nozzle in which a large number of micro discharge ports are formed in a line along the longitudinal direction is used, and cleaning water is discharged from the large number of micro discharge ports of the nozzle over the entire width direction of the substrate W. You may make it do.

  A plurality of upper spray nozzles 45 and lower spray nozzles 46 are provided in parallel to each other along the substrate transport direction, and a plurality of discharge ports are formed in a row in each of the spray nozzles 45 and 46 in the substrate transport direction. Has been.

  In addition, a drainage passage 47 for discharging used washing water that has flowed down to the inner bottom of the replacement water washing chamber 40 is provided at the bottom of the replacement water washing chamber 40. A washing water tank 49 is provided at the bottom of the replacement washing chamber 40, and a pure water supply path 50 that is connected to a pure water (fresh water) supply source is connected to the bottom. Further, a flush water supply path 61 provided at the bottom of the flush chamber 60 of the second flush unit 3 is connected in communication. A washing water supply passage 53 is connected to the bottom of the washing water tank 49 and is connected to the slit nozzle 44 in the replacement washing chamber 40 with a liquid feed pump 51 interposed therebetween. Further, at the bottom of the washing water tank 49, a feeding water pump 52 is provided, and a washing water supply passage 54 connected to each of the upper spray nozzle 45 and the lower spray nozzle 46 in the replacement washing chamber 40 is connected to each other. Has been.

  Although only a part of the configuration of the second water washing section is illustrated, it is the same as the replacement water washing section (first water washing section) 5.

  In the substrate processing apparatus 300 having the above-described configuration, first, the chemical solution is ejected from the chemical solution supply spray nozzle 32 onto the upper surface of the substrate W carried into the chemical solution processing chamber 36 while being reciprocated in the horizontal direction by the transport roller. By doing so, the final chemical treatment is performed.

  The substrate W that has been subjected to the final chemical solution processing is transferred from the pair of upper and lower air knives 37 and 37 disposed in the vicinity of the substrate carry-out port 70 before being carried out from the substrate carry-out port 70 of the chemical solution processing chamber 36 by the transport roller. The attached chemical solution is removed by the high-pressure gas ejected on both sides. The chemical liquid removed from both surfaces of the substrate W by the high-pressure gas ejected from the pair of upper and lower air knives 37, 37 flows down to the inner bottom portion of the chemical liquid processing chamber 36 and is collected in the chemical liquid tank 31 through the circulation drainage channel 76. The

  The substrate W that has passed through the substrate carry-out port 70 and has been carried into the replacement rinsing chamber 40 from the substrate carry-in port 42 remains as a result of the high-pressure gas being ejected from the pair of upper and lower air knives 71, 71 on both sides thereof. Further removal of the liquid chemical is performed. At this time, the chemical liquid removed from both surfaces of the substrate W by the gas ejected from the pair of upper and lower air knives 71, 71 remains in the chemical liquid removal region 73 of the replacement washing chamber 40 by the partition member 72, and downstream in the substrate transport direction. Scattering into the water-washing treatment area 74 is prevented. The chemical solution removed in the chemical solution removal region 73 is collected in the chemical solution tank 31 via a circulation drainage path 78 provided at the bottom of the chemical solution removal region 73 and connected to the chemical solution tank 31.

  The cleaning water is supplied from the slit nozzle 44 over the entire width direction of the substrate W to the upper surface of the substrate W which has been transferred from the chemical solution removal region 73 through the substrate carry-in port 83 formed in the partition member into the washing treatment region 74. The chemical solution remaining on the substrate W is cleaned by discharging the cleaning water onto the upper and lower surfaces of the substrate W that is reciprocated in the horizontal direction from the upper spray nozzle 45 and the lower spray nozzle 46 without interruption. Replace with water. The substrate W that has undergone the replacement water washing process in the replacement water washing unit 5 is carried out from the substrate carry-out port 43 to the second water washing unit.

  In the substrate processing apparatus 300 having the above-described configuration, the two pairs of upper and lower air knives 37, 37, 71, 71 are respectively divided into a chemical solution treatment chamber 36 and a chemical solution removal region 73 of the replacement water washing chamber 40. And the removal of the chemical solution by the gas ejected from the preceding air knives 37, 37 are separated from each other in the substrate transport direction by a distance that the gas ejected from the subsequent air knives 71, 71 does not impede. It is arranged. For this reason, the chemical solution removal effect by the gas ejected from the two pairs of air knives can be obtained, and the amount of the chemical solution taken out of the chemical solution removal region 73 can be reduced. Thereby, the usage-amount of the cleaning water which should be used for the replacement water washing process performed after a final chemical | medical solution process can be reduced, and the reduction of the running cost of the whole substrate processing apparatus can be aimed at by extension. Also, in the chemical treatment chamber of the chemical treatment section that performs the final chemical treatment, two pairs of upper and lower air knives, the distance at which the ejected gas from the subsequent air knife does not hinder the chemical removal action by the ejected gas from the preceding air knife Only the chemical solution processing chamber of the chemical processing unit that performs the final chemical processing is designed and manufactured with a longer dimension in the substrate transport direction than the chemical processing chambers of the other chemical processing units in order to place both separately in the substrate transport direction. This eliminates the need to design and manufacture the chemical processing chambers of the other chemical processing units, thereby reducing the design and manufacturing costs of the chemical processing chambers.

  In the first embodiment, the replacement water washing chamber 40 is divided into two regions of the chemical solution removal region 73 and the water washing treatment region 74 by the partition member 72, and two pairs of upper and lower air knives 37, 37, 71, 71 are provided. A pair of the chemical solution processing chamber 36 and the chemical solution removal region 73 in the replacement water washing chamber 40 are arranged in pairs. For example, as shown in FIG. A chemical solution removal chamber 6 independent of the water washing chamber 40 is arranged, and upper and lower air knives 71 and 71 are installed in the chemical solution removal chamber 6 to form a chemical solution removal region 73. 74 may be configured.

  FIG. 2 schematically shows a main part of a substrate processing apparatus 400 according to a modification of the first embodiment. In addition, the same code | symbol is used for the component and member which are the same as or correspond to the component and member shown in FIG. 1, and the description is abbreviate | omitted.

  In the modification shown in FIG. 2, the substrate W on which the chemical solution attached is removed by the high-pressure gas ejected from the pair of upper and lower air knives 37 and 37 to the both surfaces after finishing the final chemical solution treatment, When it passes through the substrate carry-out port 70 and is carried into the chemical solution removal chamber 6 from the substrate carry-in port 80 of the chemical solution removal chamber 6, a high-pressure gas is ejected from a pair of upper and lower air knives 71, 71 on both surfaces thereof. The remaining chemical solution is removed. At this time, the chemical liquid removed from both surfaces of the substrate W by the gas ejected from the pair of upper and lower air knives 71, 71 stays in the chemical liquid removal chamber 6 (chemical liquid removal region 73) and is adjacent to the downstream side in the substrate transport direction. Scattering into the washing chamber 40 is prevented. The chemical solution removed in the chemical solution removal chamber 6 (chemical solution removal region 73) is collected in the chemical solution tank 31 via a circulation drainage channel 82 provided at the bottom of the chemical solution removal chamber 6 and connected to the chemical solution tank 31. . The substrate W passed through the substrate carry-out port 81 of the chemical solution removal chamber 6 and further transferred into the replacement water washing chamber 40 (water washing treatment region 74) through the substrate carry-in port 42 is the same as that in the first embodiment. Replacement water washing is performed.

  Next, the substrate processing apparatus 500 which concerns on the 2nd Embodiment of this invention is demonstrated.

  FIG. 3 schematically shows a main part of a substrate processing apparatus 500 according to the second embodiment of the present invention.

  The substrate processing apparatus 500 includes a chemical processing unit 1 that performs a final chemical processing among a plurality of chemical processings, and a replacement water washing unit (first water washing unit) 5 disposed on the subsequent stage side. A second water washing unit 3, a direct water washing unit, and a drying processing unit, all of which are not shown, are connected in this order in the subsequent stage of the replacement water washing unit 5. In this substrate processing apparatus 500, the configurations of the chemical solution processing unit 1 and the second water washing unit other than the replacement water washing unit 5 are the same as those of the substrate processing apparatus 300 according to the first embodiment described above with reference to FIG. 3, the same reference numerals as those used in FIG. 1 are attached to the respective components and members, and the description thereof is omitted.

  The substrate processing apparatus 500 includes a high-pressure nozzle 84 disposed on the downstream side in the substrate transport direction from the slit nozzle 44 and a substrate on the substrate carry-out port 43 side in the replacement water cleaning chamber 40. A pair of air nozzles 85 and 85 are provided above and below the conveyance path. The washing process region 74 is in a closed form, and an opening / closing shutter (not shown) is provided at the substrate carry-in port 83 of the partition member 72.

  In the replacement rinsing chamber 40 of the replacement rinsing unit 5 in the substrate processing apparatus 500 according to the second embodiment, the total length of the rinsing region 74 (the length in the substrate transport direction) is the length dimension of the substrate W (the substrate transport direction). (Dimension in the direction along). For example, when the length of the substrate W to be processed is 2.4 m to 2.5 m, the total length of the water washing region 74 is set to 1 m to 1.5 m. Then, the substrate W does not reciprocate or pause in the washing process region 74, for example, the substrate having a length in the transport direction of 2.5 m inside the washing process region 74 having a total length of 1 m. The substrate W is transported at high speed by the transport rollers so that W passes in 3 to 20 seconds. Further, the substrates W are successively carried into the washing process region 74 with an interval of, for example, about one sheet in the substrate transport direction. Further, an exhaust pipe 86 for discharging air containing mist of cleaning water from the inside of the replacement water washing chamber 40 is provided on the ceiling portion of the replacement water washing chamber 40.

  As the high-pressure nozzle 84, for example, as shown in a schematic front view seen from the downstream side in the substrate conveyance direction in FIG. 4, a spray pipe 92a arranged in a direction intersecting the substrate conveyance direction is arranged in the longitudinal direction. A plurality of nozzle portions 94a are formed in close proximity to each other along a line, and a series high-density fan spray nozzle 84a that discharges cleaning water in a fan shape from the discharge port of each nozzle portion 94a at a high pressure is used. A washing water supply path 90 connected to the washing water tank 49 and connected to the washing water tank 92 is connected to the spray pipe 92a of the series high density fan spray nozzle 84a. The series high-density fan spray nozzle 84a is installed at a height position where the distance from the discharge port of the nozzle portion 94a to the upper surface of the substrate W is 10 mm to 300 mm, for example, and the plurality of nozzle portions 94a are, for example, 20 mm. Provided at a pitch of ~ 200 mm. Such a high-pressure nozzle 84 is arranged in parallel to the upper surface of the substrate W and orthogonal to the substrate transport direction or in an oblique direction with respect to the direction orthogonal to the substrate transport direction (with respect to the slit nozzle 44). The front side is tilted in the opening direction). From the discharge port of the high-pressure nozzle 84, cleaning water having a high pressure, for example, a pressure of 0.2 MPa, is discharged over the entire width direction of the substrate W onto the upper surface of the substrate W being transferred.

  Instead of the serial high density fan spray nozzle 84a, a high pressure nozzle that performs the same function may be used. For example, as shown in the schematic front view seen from the downstream side in the substrate transport direction in FIG. 5, the two-fluid spray header pipe 92 b arranged in the direction intersecting the substrate transport direction is arranged along the longitudinal direction thereof. A plurality of two-fluid nozzle portions 94b are formed in close proximity to each other in a row, and a two-fluid spray nozzle 84b that mists and discharges wash water from the discharge ports of the respective two-fluid nozzle portions 94b with a gas pressure such as air. Can be used. A washing water supply path 90 is connected to the two-fluid spray header pipe 92b of the two-fluid spray nozzle 84b, and an air supply path 96 connected to the air supply source is connected to the two-fluid spray header pipe 92b. For example, the two-fluid spray nozzle 84b is installed at a height such that the distance from the discharge port of the two-fluid nozzle portion 94b to the upper surface of the substrate W is 10 mm to 100 mm. For example, it is provided at a pitch of 20 mm to 100 mm.

  Further, the high pressure nozzle 84 may be provided with a hood 97 for preventing the mist of cleaning water discharged from the discharge port from scattering. Further, an exhaust pipe 86 may be connected in communication with the hood 97, and a mist suction device that vacuums and discharges mist of cleaning water through the exhaust pipe 86 and the hood 97 may be provided.

  The pair of upper and lower air nozzles 85, 85 are arranged in parallel with the upper and lower surfaces of the inclined substrate W and obliquely so that the front side opens with respect to the direction orthogonal to the substrate transport direction. The air nozzle 85 is connected to an air supply pipe 99 which is connected to an air supply channel, and air (counter air) flows from the air nozzle 85 to the upper and lower surfaces of the substrate W in the substrate transport direction. Is ejected diagonally in the opposite direction or directly below. Instead of air, another gas, such as nitrogen gas, may be ejected to each surface of the substrate W.

  In the substrate processing apparatus 500 having the above-described configuration, the substrate W that has been subjected to the final chemical processing is disposed in the vicinity of the substrate carry-out port 70 before being carried out from the substrate carry-out port 70 of the chemical solution processing chamber 36 by the carrying roller. The attached chemical solution is removed by a high-pressure gas ejected from the pair of upper and lower air knives 37, 37 on both surfaces thereof. The chemical liquid removed from both surfaces of the substrate W by the high-pressure gas ejected from the pair of upper and lower air knives 37, 37 flows down to the inner bottom portion of the chemical liquid processing chamber 36 and is collected in the chemical liquid tank 31 through the circulation drainage channel 76. The

  The substrate W that has passed through the substrate carry-out port 70 and has been carried into the replacement rinsing chamber 40 from the substrate carry-in port 42 remains as a result of the high-pressure gas being ejected from the pair of upper and lower air knives 71, 71 on both sides thereof. Further removal of the liquid chemical is performed. At this time, the chemical liquid removed from both surfaces of the substrate W by the gas ejected from the pair of upper and lower air knives 71, 71 remains in the chemical liquid removal region 73 of the replacement washing chamber 40 by the partition member 72, and downstream in the substrate transport direction. Scattering into the water-washing treatment area 74 is prevented. The chemical solution removed in the chemical solution removal region 73 is collected in the chemical solution tank 31 via a circulation drainage path 78 provided at the bottom of the chemical solution removal region 73 and connected to the chemical solution tank 31.

  When the substrate W is carried from the chemical solution removal region 73 through the substrate carry-in port 83 formed in the partition member 72 and into the water washing treatment region 74, the slit W discharges the slit nozzle 44 to the upper surface of the substrate W. Washing water is discharged in the form of a curtain over the entire width direction.

  As shown in a schematic side view in FIG. 6, the remaining chemical on the substrate W whose adhesion amount has been reduced by the high-pressure gas from the two pairs of upper and lower air knives 37, 37, 71, 71 is the slit nozzle. Dilution is performed by the cleaning water A discharged in a curtain form from 44, and a part of the chemical solution B is washed away from the substrate W. Subsequently, high-pressure cleaning water is discharged from the discharge port of the high-pressure nozzle 84 toward the upper surface of the substrate W. As shown in FIG. 6, the chemical solution and the cleaning water still remaining on the substrate W after passing through the position where the slit nozzle 44 is disposed by the wall of the water formed by the cleaning water A discharged from the high-pressure nozzle 84. The mixture C is prevented from flowing forward. Since the substrate W moves forward in a state where the forward flow of the mixed solution C of the chemical solution and the cleaning water is blocked in this way, while the substrate W passes the position where the high pressure nozzle 84 is disposed, The chemical solution is rapidly replaced with washing water. During this time, the cleaning water is continuously discharged from the discharge port of the lower spray nozzle 46 to the lower surface of the substrate W, and the lower surface of the substrate W is washed with water. Then, before the substrate W is carried out of the replacement rinsing chamber 40, air is blown from the pair of upper and lower air nozzles 85, 85 toward the upper and lower surfaces of the substrate W, respectively. As shown in a schematic side view in FIG. 7, the liquid E adhering to the upper and lower surfaces of the substrate W is moved forward by the pressure of the air D ejected from the pair of air nozzles 85, 85 to the upper and lower surfaces of the substrate W. The flow is stopped and the chemical solution adheres to the substrate W and is effectively prevented from being taken out of the replacement washing chamber 40.

  The series of water washing processes described above is a short time from when the substrate W is carried into the water washing treatment area 74 of the replacement washing room 40, continuously conveyed in one direction through the water washing treatment area 74, and then carried out of the substitution water washing room 40. For example, it is performed in 3 to 20 seconds. Further, since the chemical liquid on the substrate W is rapidly replaced with the cleaning water by the cleaning water discharged from the high-pressure nozzle 84 to the upper surface of the substrate W with high pressure, the cleaning process can be efficiently performed by using a relatively small amount of the cleaning water. Done. Further, since the chemical solution remains on the substrate W and is effectively prevented from being taken out of the replacement water washing chamber 40, the contamination of the washing water after being used for washing the substrate W in the second water washing chamber 60. Is reduced. As a result, the circulation usage rate of the washing water used in the second washing chamber 60 is increased, which leads to further reduction in the amount of pure water used.

  In the second embodiment, the replacement flush chamber 40 is divided into two regions, a chemical solution removal region 73 and a flush treatment region 74, by the partition member 72, and two pairs of upper and lower air knives 37, 37, 71, 71 are provided. A pair of the chemical solution processing chamber 36 and the chemical solution removal region 73 in the replacement water washing chamber 40 are disposed in pairs. For example, as shown in FIG. A chemical solution removal chamber 100 independent of the water washing chamber 40 is arranged, and upper and lower air knives 71 and 71 are installed in the chemical solution removal chamber 100 to form a chemical solution removal region 73. 74 may be configured.

  FIG. 8 schematically shows a main part of a substrate processing apparatus 600 according to a modification of the second embodiment. In addition, the same code | symbol is used for the component and member which are the same as or correspond to the component and member shown in FIG. 3, and the description is abbreviate | omitted.

  The replacement water washing chamber 40 (water washing treatment region 74) in the substrate processing apparatus 600 is in a closed form, and the substrate carry-in entrance 42 is provided with an opening / closing shutter (not shown). The total length of the replacement rinsing chamber 40 (length in the substrate transport direction) is shorter than the length dimension of the substrate W (dimension in the direction along the substrate transport direction). For example, when the length of the substrate W to be processed is 2.4 m to 2.5 m, the total length of the replacement rinsing chamber 40 is set to 1 m to 1.5 m. The substrate W does not reciprocate or temporarily stop in the replacement water washing chamber 40, for example, the substrate W having a length in the transport direction of 2.5 m inside the replacement water washing chamber 40 having a total length of 1 m. The substrate W is transported at high speed by the transport rollers so that W passes in 3 to 20 seconds. Further, the substrates W are successively carried into the replacement rinsing chamber 40 one after another with an interval of, for example, one sheet in the substrate transport direction.

  In the modification shown in FIG. 8, the substrate W on which the chemical solution attached is removed by the high-pressure gas ejected from the pair of upper and lower air knives 37 and 37 to the both surfaces after finishing the final chemical treatment, When it passes through the substrate carry-out port 70 and is carried into the chemical solution removal chamber 100 from the substrate carry-in port 101 of the chemical solution removal chamber 100, a high-pressure gas is ejected from a pair of upper and lower air knives 71 and 71 on both sides thereof. The remaining chemical solution is removed. At this time, the chemical liquid removed from both surfaces of the substrate W by the gas ejected from the pair of upper and lower air knives 71 and 71 stays in the chemical liquid removal chamber 100 (chemical liquid removal region 73) and is adjacent to the downstream side in the substrate transport direction. Scattering into the washing chamber 40 is prevented. The chemical solution removed in the chemical solution removal chamber 100 (chemical solution removal region 73) is collected in the chemical solution tank 31 via a circulation drainage channel 78 provided at the bottom of the chemical solution removal chamber 100 and connected to the chemical solution tank 31. . The substrate W which has passed through the substrate carry-out port 102 of the chemical solution removal chamber 100 and further transferred into the replacement water washing chamber 40 (water washing treatment region 74) via the substrate carry-in port 42 is the same as in the second embodiment. Replacement water washing is performed.

  Although the embodiments and modifications of the present invention have been described above, the present invention is not limited to the embodiments and modifications, and various modifications can be made.

  For example, in the above-described embodiment and modification, as a high-pressure gas jetting means for removing a chemical solution with respect to a substrate that has finished the final chemical solution treatment, two pairs that are connected in communication with an air supply pipe that is connected to an air supply channel. The upper and lower air knives are used, but instead of the two pairs of upper and lower air knives, two pairs of air nozzles connected in communication with an air supply pipe connected to the air supply source are used, You may make it blow off air in the diagonally opposite direction with respect to a board | substrate conveyance direction to both lower surfaces.

  Further, depending on the degree of the required chemical removal effect, of the two pairs of upper and lower air knives or air nozzles, the air knife or air nozzle located on the upstream side or the downstream side in the substrate transport direction and below the substrate. It is good also as a structure which omits the direction.

  Furthermore, the chemical solution removal area is configured by one chemical solution removal chamber installed between the chemical solution processing chamber of the chemical solution processing unit that performs the final chemical solution processing and the replacement water washing chamber (first water washing chamber). A plurality of chemical removal chambers are continuously installed between the chemical treatment chamber of the chemical treatment section and the replacement water washing chamber (first washing chamber), and a pair of upper and lower air knives or air nozzles are provided in each chemical removal chamber. The chemical solution removal region may be configured by the plurality of chemical solution removal chambers.

  In the above-described embodiment and modification, the substrate W is supported in an inclined posture and is transported horizontally in the replacement flushing chamber. However, the substrate may be supported and transported in a horizontal posture. Good. Further, the present invention can be widely applied to the substrate washing process after the final chemical treatment among various chemical treatments, in addition to the resist stripping treatment and the etching treatment.

1 Chemical treatment section 3 Second water washing section 5 Replacement water washing section (first water washing section)
6,100 Chemical solution removal chamber 31 Chemical solution tank 32 Chemical solution supply spray nozzle 33 Chemical solution supply path 35 Pump 36 Chemical solution treatment chamber 37, 39, 71 Air knife 38 Air supply pipe 40 Replacement water washing chamber (first water washing chamber)
42, 80, 83, 101 Substrate carry-in port 43, 70, 81, 102 Substrate carry-out port 44 Slit nozzle 45 Upper spray nozzle 46 Lower spray nozzle 47 Drainage channel 49 Washing water tank 50 Pure water supply channel 51, 52, 92 Liquid feeding Pump 53, 54, 61, 90 Washing water supply path 60 Second flushing chamber 72 Partition member 73 Chemical solution removal area 74 Washing treatment area 76, 78, 82 Circulation drainage path 77, 99 Air supply pipe 84 High-pressure nozzle 84a Series high density fan Spray nozzle 84b Two-fluid spray nozzle 85 Air nozzle 86 Exhaust pipe 92a Spray pipe 92b Two-fluid spray header pipe 94a Nozzle part 94b Two-fluid nozzle part 96 Air supply path 97 Hood 300, 400, 500, 600, 700, 800 Substrate processing apparatus W substrate

Claims (19)

A chemical processing chamber for performing final chemical processing on the substrate;
Substrate transport means disposed in the chemical processing chamber for transporting the substrate;
Chemical supply means for supplying a chemical for final chemical treatment to the main surface of the substrate conveyed by the substrate conveyance means disposed in the chemical treatment chamber;
A rinsing chamber that is installed downstream of the chemical treatment chamber in the substrate transport direction and performs a rinsing process on the substrate after the final chemical treatment
Substrate transport means disposed in the washing chamber for transporting the substrate;
Cleaning water supply means for supplying cleaning water to the main surface of the substrate conveyed by the substrate conveying means disposed in the washing chamber;
In a substrate processing apparatus comprising:
The substrate processing apparatus includes:
A first high-pressure gas jetting unit that is provided in the chemical solution processing chamber and that removes the chemical solution adhering to the substrate by jetting a high-pressure gas to the substrate that has finished the final chemical solution processing;
A second high-pressure gas jet is further provided in a chemical solution removal region adjacent to the chemical solution processing chamber on the downstream side in the substrate transport direction, and further removes the chemical solution attached to the substrate from which the chemical solution has been removed by the first high-pressure gas jetting means. Means,
Further comprising
A substrate processing apparatus for performing a water washing process on a substrate from which chemical liquid has been removed by the first and second high-pressure gas jetting means after the final chemical liquid processing has been performed in the chemical liquid processing chamber. The substrate processing apparatus according to claim 1,
In the washing chamber, a partition member is provided for partitioning the washing chamber into two regions, a chemical solution removal region on the upstream side in the substrate transport direction and a water treatment region on the downstream side in the substrate transport direction, and the chemical solution in the flush chamber The substrate processing apparatus, wherein the second high-pressure gas ejection means is provided in the removal region. The substrate processing apparatus according to claim 2,
The water-washing treatment area is a closed configuration in which the length in the substrate transport direction is shorter than the dimension in the substrate transport direction of the substrate, and has an inlet for loading the substrate and an outlet for unloading the substrate.
The substrate transport means is configured to transport the substrate that has been carried into the washing treatment area continuously in one direction and carry it out of the washing treatment area.
The washing water supply means
A slit nozzle that is disposed in the vicinity of the entrance in the washing process area so as to intersect the substrate transport direction, and discharges cleaning water to the main surface of the substrate over the entire width direction of the substrate,
Located downstream of the slit nozzle in the substrate transport direction and intersecting the substrate transport direction, the chemical on the substrate is washed by preventing the chemical on the substrate from flowing downstream in the substrate transport direction. A high-pressure nozzle that discharges cleaning water to the main surface of the substrate at a high pressure so that it is rapidly replaced with water;
Configured with
A gas is applied to the main surface of the substrate at the outlet side in the washing process region so as to intersect the substrate transport direction and prevent the chemical solution from adhering to the substrate and being taken out of the washing treatment region. A gas nozzle that jets in a direction directly below or obliquely opposite to the substrate transport direction;
Drainage means for discharging the wash water that has flowed down to the inner bottom of the washing treatment area;
A substrate processing apparatus further comprising: The substrate processing apparatus according to claim 3,
The slit nozzle has a slit-like discharge port along the longitudinal direction, and the cleaning water from the slit-like discharge port to the main surface of the substrate is curtained in a direction inclined to the downstream side in the substrate transport direction with respect to the direct lower direction. A substrate processing apparatus which discharges in a shape. In the substrate processing apparatus of Claim 3 or Claim 4,
The high-pressure nozzle has a plurality of discharge ports arranged adjacent to each other in a direction intersecting the substrate transport direction, and discharges cleaning water in a fan shape from each discharge port at a high pressure in series. A substrate processing apparatus which is a nozzle. In the substrate processing apparatus of Claim 3 or Claim 4,
The high-pressure nozzle has a plurality of discharge ports arranged adjacent to each other in a direction intersecting the substrate transport direction, and is a two-fluid that mists and discharges cleaning water from each discharge port with a gas pressure. A substrate processing apparatus which is a spray nozzle. In the substrate processing apparatus in any one of Claims 3 thru | or 6,
A substrate processing apparatus, wherein a hood is attached to the high-pressure nozzle to prevent mist of cleaning water discharged from the discharge port from scattering. The substrate processing apparatus according to claim 7,
A substrate processing apparatus, further comprising a mist suction device for sucking and discharging mist of cleaning water through the hood. The substrate processing apparatus according to claim 3, wherein:
A substrate processing apparatus, wherein a part of the cleaning water used and recovered in a second washing chamber provided on the rear side of the washing chamber is supplied to the slit nozzle and the high-pressure nozzle. The substrate processing apparatus according to claim 1,
A chemical removal chamber independent of the washing chamber is installed between the chemical treatment chamber and the flush chamber, and the chemical removal area is configured by providing the second high-pressure gas ejection means in the chemical removal chamber. A substrate processing apparatus. The substrate processing apparatus according to claim 10, wherein
A substrate processing apparatus characterized in that a plurality of the chemical solution removal chambers are connected between the chemical solution processing chamber and the water washing chamber, and the high pressure gas ejection means is provided in each chemical solution removal chamber to constitute the chemical solution removal region. . The substrate processing apparatus according to claim 10 or 11,
The washing chamber has a closed form in which the length in the substrate transport direction is shorter than the dimension of the substrate in the substrate transport direction, and has an inlet into which the substrate is carried in and an outlet through which the substrate is carried out. The substrate that has been carried into the washing chamber is continuously transported in one direction and carried out of the washing chamber.
The washing water supply means
A slit nozzle that is disposed near the entrance of the washing chamber so as to intersect the substrate transport direction and discharges cleaning water to the main surface of the substrate over the entire width direction of the substrate;
Located downstream of the slit nozzle in the substrate transport direction and intersecting the substrate transport direction, the chemical on the substrate is washed by preventing the chemical on the substrate from flowing downstream in the substrate transport direction. A high-pressure nozzle that discharges cleaning water to the main surface of the substrate at a high pressure so that it is rapidly replaced with water;
Configured with
Directly below the main surface of the substrate so as to prevent the chemical solution from adhering to the substrate and being taken out of the washing chamber at the outlet side in the washing chamber so as to intersect the substrate transport direction. A gas nozzle that is ejected obliquely in the opposite direction to the substrate transport direction;
Drainage means for discharging the wash water flowing down to the inner bottom of the flush chamber;
A substrate processing apparatus further comprising: The substrate processing apparatus according to claim 12, wherein
The slit nozzle has a slit-like discharge port along the longitudinal direction, and the cleaning water from the slit-like discharge port to the main surface of the substrate is curtained in a direction inclined to the downstream side in the substrate transport direction with respect to the direct lower direction. A substrate processing apparatus which discharges in a shape. In the substrate processing apparatus of Claim 12 or Claim 13,
The high-pressure nozzle has a plurality of discharge ports arranged adjacent to each other in a direction intersecting the substrate transport direction, and discharges cleaning water in a fan shape from each discharge port at a high pressure in series. A substrate processing apparatus which is a nozzle. The substrate processing apparatus according to claim 12 or 14,
The high-pressure nozzle has a plurality of discharge ports arranged adjacent to each other in a direction intersecting the substrate transport direction, and is a two-fluid that mists and discharges cleaning water from each discharge port with a gas pressure. A substrate processing apparatus which is a spray nozzle. The substrate processing apparatus according to any one of claims 12 to 15,
A substrate processing apparatus, wherein a hood is attached to the high-pressure nozzle to prevent mist of cleaning water discharged from the discharge port from scattering. The substrate processing apparatus according to claim 16, wherein
A substrate processing apparatus, further comprising a mist suction device for sucking and discharging mist of cleaning water through the hood. The substrate processing apparatus according to any one of claims 12 to 17,
A substrate processing apparatus, wherein a part of the cleaning water used and recovered in a second washing chamber provided on the rear side of the washing chamber is supplied to the slit nozzle and the high-pressure nozzle. In the substrate processing apparatus in any one of Claims 1 thru | or 18,
The first and second high-pressure gas jetting means are each a pair of upper and lower air knives or air nozzles that are arranged with the substrate sandwiched between them and remove the chemical solution that adheres by jetting high-pressure gas to both sides of the substrate. There is provided a substrate processing apparatus.

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