JP2005197487A - Substrate treatment equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide equipment wherein the equipment can be miniaturized, while the configuration equipped with a chamber in which treatment tools are arranged in the inside, and consumption of treatment liquid can be also reduced. <P>SOLUTION: The chamber 10 of a tightly closed type, which has a substrate carry-in port 12 and a substrate taking out port 14, the processing tools 16, 18 arranged inside the chamber, and a roller transfer 20 which transfers a substrate W are installed. The length of the chamber is made smaller than the dimensions in the substrate transfer direction. An air supply pipe 28 for supplying air for purging into the chamber, and an exhaust pipe 30 for exhausting air for purging, from the inside of the chamber are installed, and internal atmosphere and external atmosphere of the chamber are isolated from each other. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  This invention conveys substrates such as semiconductor wafers, glass substrates for flat panel displays (FPD), glass substrates for photomasks, printed boards, etc., ultrasonic / high pressure jet cleaning treatment, water washing treatment, air knife drying treatment, etching The present invention relates to a substrate processing apparatus that performs various types of processing such as processing, development processing, and peeling processing on a substrate.

  When wet processing such as ultrasonic / high pressure jet cleaning processing, water cleaning processing, etching processing is performed on substrates such as semiconductor wafers and glass substrates for FPD, ultrasonic / high pressure jet cleaning devices, water cleaning devices, etching devices, etc. A substrate processing apparatus having a chamber in which the processing tool is disposed is used. Then, while transporting the substrate by a transport mechanism such as a roller conveyor, a chemical solution such as pure water or an etching solution is supplied to the substrate in the chamber to perform a predetermined process on the substrate. In this way, the substrate is wet processed in the chamber while being transported in the chamber. For this reason, the chamber is equal to or larger than the size of the substrate in plan view.

Further, there has been proposed a substrate processing apparatus that does not include a chamber and includes a processing tool having a size smaller than that of the substrate in the substrate transport direction. That is, an introduction passage having an introduction port for introducing a treatment liquid at one end and a discharge passage having a discharge port for discharging the wet treatment liquid after wet treatment to the outside of the system are formed at one end. A processing tool comprising a nozzle structure in which a passage is formed at each other end to form an intersection and an opening that opens toward the substrate is provided at the intersection, and the substrate of the processing tool is provided. There has been proposed a substrate processing apparatus in which a dimension in a transport direction is smaller than that of a substrate (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 10-163153 (page 7-8, FIGS. 11 and 12)

  In a substrate processing apparatus including a chamber in which a processing tool is disposed, as the size of the substrate increases, the chamber increases and the entire apparatus increases. For example, in an apparatus that performs an etching process, it is necessary to connect an etching process chamber, a water washing process chamber, and a drying process chamber in the substrate transport direction, and the entire apparatus becomes larger and the space that occupies the clean room becomes larger. The manufacturing cost of the device is also increased. Furthermore, there is a problem that the amount of the chemical solution and pure water increases due to the increase in the chamber.

  On the other hand, a substrate processing apparatus without a chamber and having a processing tool smaller than the substrate is advantageous in terms of installation space and manufacturing cost, and reduces the amount of chemical solution and pure water used. Further, means and control for preventing the outflow and scattering of pure water are necessary, and the apparatus configuration and control mechanism are complicated. Moreover, there is a possibility that the spray of the processing liquid and the evaporated gas may diffuse from the opening of the nozzle structure to the surrounding atmosphere.

  The present invention has been made in view of the circumstances as described above, and the apparatus can be downsized while the processing tool has a configuration including a chamber disposed therein. The amount used can also be reduced, and since the chamber is provided, the outflow and scattering of the processing liquid can be easily prevented, and there is a risk that the processing liquid splashes and evaporated gas may diffuse into the surrounding atmosphere. An object of the present invention is to provide a non-substrate processing apparatus.

  According to the first aspect of the present invention, there is provided a sealed chamber having a substrate inlet and a substrate outlet, a processing tool disposed in the chamber for performing a predetermined process on the substrate, and the substrate relative to the processing tool. And a moving means for moving the substrate, wherein the width of the chamber is equal to or larger than a dimension of the substrate in a direction orthogonal to the relative movement direction, and the length of the chamber is set to be the substrate. Gas for isolating the internal atmosphere and the external atmosphere of the chamber so that the chamber in which the processing tool is disposed and the substrate are relatively moved to be smaller than the dimension in the relative movement direction. A supply means and a gas discharge means are provided.

  The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the gas supply means is a purge gas supply means for supplying a purge gas into the chamber, and the gas discharge means is the It is an exhaust means for exhausting the purge gas from the chamber.

  According to a third aspect of the present invention, in the substrate processing apparatus of the second aspect, the purge gas supply means and the exhaust means are respectively provided in an upper space and a lower space of a relative movement path of the substrate. It is characterized by.

  According to a fourth aspect of the present invention, in the substrate processing apparatus according to the first aspect, the gas supply means is disposed on each of an upper side and a lower side of the substrate inlet of the chamber with a relative movement path of the substrate interposed therebetween. A pair of upper and lower inlets that each have a gas discharge port facing and close to the relative movement path of the substrate, and discharge the curtain gas from the gas discharge port toward the relative movement path of the substrate. Side gas discharge means, and a gas discharge port disposed on the upper side and the lower side of the substrate outlet of the chamber with the relative movement path of the substrate interposed therebetween, and facing the relative movement path of the substrate. A pair of upper and lower outlet side gas discharge means for discharging curtain gas from the gas discharge port toward the relative movement path of the substrate, and the gas discharge means is a substrate inlet of the chamber. In A gas for the curtain is provided on each of the upper and lower sides of the relative movement path of the plate, and has gas inlets facing each other in the vicinity of the relative movement path of the substrate. A pair of upper and lower inlet side gas suction means for sucking each of them, and a relative movement of the substrate respectively disposed above and below the substrate outlet of the chamber across a relative movement path of the substrate A pair of upper and lower outlet side gas suction means each having gas suction ports facing each other in close proximity to the passage and sucking curtain gas through the gas suction ports, respectively, and a substrate is present at the substrate inlet of the chamber When the upper and lower pair of inlet-side gas discharge means and the upper and lower pair of inlet-side gas suction means are respectively operated, and a substrate is present at the substrate outlet of the chamber, When a pair of outlet-side gas discharge means and the pair of upper and lower outlet-side gas suction means are respectively operated and no substrate is present at the substrate inlet of the chamber, the upper-side or lower-side inlet-side gas discharge means And the lower side or upper side inlet side gas suction means, respectively, and when there is no substrate at the substrate outlet of the chamber, the upper side or lower side outlet side gas discharge means and the lower side or upper side It is characterized by comprising switching means for switching to operate the outlet side gas suction means on the side.

  A fifth aspect of the present invention is the substrate processing apparatus according to any one of the first to fourth aspects, wherein a plurality of the chambers are connected in the relative movement direction of the substrate.

  In the substrate processing apparatus according to the first aspect of the present invention, the processing tool for performing a predetermined process on the substrate is disposed inside the sealed chamber, and the internal atmosphere and the external atmosphere of the chamber are gas supply means and gas. Since it is isolated by the discharging means, it is possible to easily prevent the processing liquid from flowing out and scattering, and also to prevent the processing liquid from splashing into the surrounding atmosphere and the evaporation gas from being diffused. On the other hand, the length of the chamber is made smaller than the dimension of the substrate in the relative movement direction so that the chamber and the substrate move relatively, so that the apparatus can be reduced in size and space-saving. And cost reduction, and the amount of processing liquid used can be reduced.

  In the substrate processing apparatus according to the second aspect of the present invention, the purge gas is supplied into the sealed chamber by the purge gas supply means, so that the gas can be prevented from entering the chamber from the outside, and the exhaust means can be used. By exhausting the purge gas from the chamber, leakage of gas from the chamber to the outside can be suppressed. Thereby, the internal atmosphere and external atmosphere of a chamber can be isolated.

  In the substrate processing apparatus according to the third aspect of the present invention, even if the substrate moves relative to the chamber and the internal space of the chamber is divided up and down by the substrate, the purge gas supply means and the exhaust means are the substrates. By providing each in the upper space and the lower space of the relative movement path, the internal atmosphere and the external atmosphere of the chamber can be reliably separated.

  In the substrate processing apparatus according to the fourth aspect of the present invention, when there is no substrate in the chamber, relative to the substrate from the gas discharge port of the upper or lower gas discharge means at the substrate inlet and the substrate outlet of the chamber, respectively. The curtain gas is formed by discharging the curtain gas toward the moving path and sucking the curtain gas through the gas suction port of the gas suction means on the lower side or the upper side.

  When a part of the substrate moves relatively in the chamber and there is a substrate at the substrate inlet of the chamber and no substrate at the substrate outlet, a pair of upper and lower inlet side gas discharge means at the substrate inlet of the chamber The gas for the curtain is discharged from the gas discharge port toward the relative movement path of the substrate, and the curtain gas rebounds on the upper and lower surfaces of the substrate, respectively. By being sucked through the suction ports, gas curtains are formed on both the upper and lower surfaces of the substrate. On the other hand, at the substrate outlet of the chamber, curtain gas is discharged from the gas discharge port of the upper or lower outlet-side gas discharge means toward the relative movement path of the substrate, and the lower or upper outlet is provided. The curtain gas is formed by sucking the curtain gas through the gas suction port of the side gas suction means.

  When the substrate moves relatively in the chamber and the substrate exists at the substrate inlet and the substrate outlet of the chamber, the gas outlets of the upper and lower gas discharge means respectively at the substrate inlet and the substrate outlet of the chamber. Curtain gas is discharged toward the relative movement path of the substrate, and each curtain gas rebounds on the upper and lower surfaces of the substrate and is sucked through the gas suction ports of the upper and lower gas suction means. As a result, gas curtains are formed on both the upper and lower surfaces of the substrate.

Further, when there is no substrate at the substrate inlet of the chamber and a substrate at the substrate outlet, the relative movement path of the substrate from the gas discharge port of the upper or lower inlet side gas discharge means at the substrate inlet of the chamber. The curtain gas is formed by discharging the curtain gas toward the, and sucking the curtain gas through the gas suction port of the lower or upper inlet side gas suction means. On the other hand, at the substrate outlet of the chamber, curtain gas is discharged from the gas discharge ports of the pair of upper and lower outlet side gas discharge means toward the relative movement path of the substrate, and each curtain gas is discharged from the upper surface of the substrate. The gas curtains are formed on the upper and lower surfaces of the substrate by rebounding from the lower surface and the lower surface, respectively, and being sucked through the gas suction ports of the pair of upper and lower outlet side gas suction means.
With the above operation, the internal atmosphere and the external atmosphere of the chamber can always be reliably separated from each other.

  In the substrate processing apparatus according to the fifth aspect of the present invention, a plurality of types of processing, for example, etching processing, rinsing processing, and drying processing are continuously performed on the substrate by a plurality of continuous chambers. Since each chamber has a length smaller than the dimension of the substrate in the relative movement direction, an increase in the size of the entire apparatus can be suppressed.

The best mode for carrying out the present invention will be described with reference to FIGS.
FIG. 1 shows an example of an embodiment of the present invention, and is a diagram schematically showing a schematic configuration of a substrate processing apparatus.

  The substrate processing apparatus includes a sealed chamber 10 having a substrate carry-in port 12 and a substrate carry-out port 14. Inside the chamber 10, an ultrasonic / high pressure jet cleaning / water washing processing unit 16 and an air knife drying processing unit 18 are disposed as processing tools for performing predetermined processing on the substrate W. The ultrasonic wave / high pressure jet cleaning / water washing processing unit 16 and the air knife drying processing unit 18 are respectively installed on the upper side and the lower side of the substrate W with respect to the conveyance path. In addition, a roller conveyor 20 is provided for carrying the substrate W into the chamber 10, carrying it in the chamber 10, and carrying it out of the chamber 10.

  As shown in the schematic plan view of FIG. 2, the chamber 10 has a width equal to or larger than a dimension in a direction orthogonal to the transport direction of the substrate W, and a length of the chamber 10 in the transport direction of the substrate W. Have been smaller. For this reason, the substrate W is subjected to ultrasonic, high-pressure jet cleaning, water washing, and air knife drying in a state where a part of the substrate W is accommodated in the chamber 10. Then, the substrate W is transported by the roller conveyor 20, and each part sequentially passes through the chamber 10. When the entire substrate W finishes passing through the chamber 10, the processing on the entire surface of the substrate W is completed. Thus, since the planar shape of the chamber 10 is smaller than the substrate W, the entire apparatus can be reduced in size.

  The chamber 10 is provided with a gas supply port 24 and an exhaust port 26, respectively. A purge gas supply pipe such as air or nitrogen gas, for example, an air supply pipe 28 is connected to the gas supply port 24. In addition, air is supplied into the chamber 10 through an air supply pipe 28 from an air supply source (not shown). An exhaust pipe 30 is connected to the exhaust port 26 so that the purge air supplied into the chamber 10 through the air supply pipe 28 is exhausted through the exhaust pipe 30 by a vacuum exhaust pump (not shown). It has become. Then, by appropriately adjusting and controlling the air supply flow rate into the chamber 10 and the exhaust flow rate from the chamber 10, outside air passes from the outside into the chamber 10 through the substrate carry-in port 12 and the substrate carry-out port 14. Invasion is suppressed, and gas is prevented from leaking from the inside of the chamber 10 to the outside through the substrate carry-in port 12 and the substrate carry-out port 14. Thereby, the internal atmosphere and the external atmosphere of the chamber 10 are isolated from each other, and the splash of pure water used for cleaning and the gas removed from the substrate W by the air knife 18 and the evaporated gas are prevented from diffusing outside the chamber 10. The Although the chamber 10 is also provided with a drain outlet, its illustration is omitted.

  FIG. 3 is a diagram schematically showing a schematic configuration of a substrate processing apparatus according to another embodiment of the present invention. This substrate processing apparatus has a chamber 10 similar to the chamber 10 in the substrate processing apparatus shown in FIG. 1 (also in FIG. 3, the components used in common with the substrate processing apparatus shown in FIG. The same reference numerals are assigned and description thereof is omitted), and another chamber 32 is installed upstream of the chamber 10. The chamber 32 is also a sealed type having a substrate carry-in port 34 and a substrate carry-out port 36, and an etching processing unit 38 that performs an etching process on the upper surface of the substrate W is disposed inside the chamber 32. A roller conveyor 22 for transporting the substrate W is disposed inside the chamber 32.

  Similar to the chamber 10, the width of the chamber 32 is equal to or larger than the dimension in the direction orthogonal to the transport direction of the substrate W, and the length thereof is smaller than the dimension in the transport direction of the substrate W. For this reason, the substrate W is partly accommodated in the chamber 32, and the accommodation portion is subjected to an etching process. The substrate W is transported by the roller conveyor 22, and each part sequentially passes through the chamber 32. By passing through, the entire surface of the substrate W is etched. In this substrate processing apparatus, etching processing, ultrasonic wave, high-pressure jet cleaning, water washing processing, and air knife drying processing are successively performed on the substrate W by two chambers 32 and 10. Since the lengths 32 and 10 are smaller than the dimensions in the transport direction of the substrate W, the entire apparatus can be reduced in size.

  The chamber 32 is also provided with a gas supply port 40 and an exhaust port 42, respectively. An air supply pipe 44 is connected to the gas supply port 40, and an exhaust pipe 46 is connected to the exhaust port 42. Similarly to the chamber 10, the internal atmosphere and the external atmosphere of the chamber 32 can be isolated by appropriately adjusting and controlling the air supply flow rate into the chamber 32 and the exhaust flow rate from the chamber 32. It can be done.

  4 and 5 show a configuration example of the chamber, and FIG. 4 is a cross-sectional view of the chamber along the substrate transport direction, showing a cross-sectional view taken along arrows IV-IV in FIG. It is sectional drawing in the direction orthogonal to the substrate conveyance direction of a chamber, Comprising: The VV arrow sectional drawing of FIG. 4 is shown.

  The chamber 48 is a sealed type having a substrate carry-in port 50 and a substrate carry-out port 52, and a processing tool 54 is disposed inside the chamber 48, but the chamber 48 is a direction orthogonal to the transport direction of the substrate W. In FIG. 6, the bottom surface and the ceiling surface are inclined, and the substrate W is also conveyed by a roller conveyor (not shown in the drawings, similarly in FIGS. 6 to 10) in an inclined posture in a direction orthogonal to the conveying direction. Yes. The width of the chamber 48 is also equal to or larger than the dimension in the direction orthogonal to the transport direction of the substrate W, and the length is smaller than the dimension in the transport direction of the substrate W. Further, the chamber 48 is provided with a gas supply port 56 in the vicinity of the raised side end of the ceiling surface, and an air supply pipe 58 is connected to the gas supply port 56 in communication with the bottom surface of the chamber 48. An exhaust / drain port 60 is provided in the vicinity of the lowered side end, and an exhaust / drain tube 62 is connected to the exhaust / drain port 60. In the chamber 48 having such a structure, the drainage flowing down to the bottom surface naturally flows toward the one side end along the inclination, and is discharged from the exhaust / drainage port 60 through the exhaust / drainage pipe 62.

  Next, the chamber 64 whose sectional view along the substrate transport direction is shown in FIG. 6 is a sealed type having a substrate carry-in port 66 and a substrate carry-out port 68. Processing tools 70a and 70b are disposed below and below, respectively. Further, partition walls 71a and 71b are provided between the ceiling surface of the chamber 64 and the processing tool 70a, and between the bottom surface of the chamber 64 and the processing tool 70b, respectively. The inner space is partitioned forward and backward in the substrate transport direction, and the front and rear inner spaces are in fluid communication with each other through a passage formed between the opposing surfaces of the substrate W and the processing tools 71a and 71b. Yes. Gas supply ports 72a and 72b are respectively provided on the ceiling surface and bottom surface of the chamber 64 on the front side in the substrate transport direction from the positions where the partition walls 71a and 71b are formed, and air is supplied to the gas supply ports 72a and 72b. The pipes 74a and 74b are connected in communication. Further, on the ceiling surface and the bottom surface of the chamber 64, exhaust ports 76a and 76b are provided on the front side in the substrate transport direction from the positions where the partition walls 71a and 71b are formed, respectively. 78b are connected in communication.

  In the chamber 64 having such a configuration, even if the substrate W is carried into the chamber 64 and the internal space of the chamber 64 is divided upward and downward by the substrate W as shown in FIG. The purge air is supplied separately to the upper space and the lower space of the substrate through the air supply pipes 74a and 74b, and the air is supplied from the upper space and the lower space of the substrate transport path through the exhaust pipes 78a and 78b. It is designed to be exhausted separately. Therefore, by appropriately adjusting and controlling the air supply flow rate into the chamber 64 and the exhaust flow rate from the chamber 64, the internal atmosphere and the external atmosphere of the chamber 64 can be reliably separated. Further, since air flows in the chamber 64 as shown by a broken line in FIG. 6, mist (particles) is prevented from reattaching to the surface of the processed substrate W by forming such an air flow. Is done.

  7 to 10 are cross-sectional views along the substrate transport direction showing another configuration example of the chamber. The chamber 80 is also a sealed type having a substrate carry-in port 82 and a substrate carry-out port 84, and a processing tool 86 is disposed inside the chamber 80. The chamber 80 has a substrate carry-in port 82 and a substrate carry-in. A gas supply means and a gas discharge means are disposed at the outlet 84, respectively.

  That is, a pair of upper and lower air discharge passages 88a having air discharge openings opened on the upper and lower sides of the substrate carry-in port 82 of the chamber 80 so as to face and oppose the substrate transfer path. , 88b are formed, and air supply pipes 90a, 90b, which are connected to an air supply source (not shown), are connected to the air discharge passages 88a, 88b, respectively. Also, a pair of upper and lower air intakes having air suction openings opened on the upper and lower sides of the substrate conveyance path, adjacent to the air discharge passages 88a and 88b and facing the substrate conveyance path. Passages 92a and 92b are formed, and exhaust pipes 94a and 94b connected to a flow path of a vacuum exhaust pump (not shown) are connected to the air suction passages 92a and 92b, respectively. The air discharge passages 88a and 88b and the air suction passages 92a and 92b are respectively disposed over the entire opening width of the substrate carry-in entrance 82 (opening width in a direction orthogonal to the substrate transport direction). From the air discharge passages 88a and 88b, curtain air is discharged from the air discharge port toward the substrate conveyance path, and the discharged air is sucked into the air suction passages 92a and 92b through the air suction port. Thus, an air curtain is formed at the substrate carry-in port 82 as will be described later.

  Similarly, a pair of upper and lower air discharge openings are also opened at the upper and lower sides of the substrate carry-out port 84 of the chamber 80 so as to face and oppose each other in the vicinity of the substrate carry path. Air discharge passages 96a and 96b are formed, and air supply pipes 98a and 98b, which are connected to an air supply source (not shown), are connected to the air discharge passages 96a and 96b, respectively. Also, a pair of upper and lower air intakes having an air suction port opened on the upper side and the lower side of the substrate conveyance path, adjacent to the air discharge passages 96a and 96b and facing the substrate conveyance path. Passages 100a and 100b are formed, and exhaust pipes 102a and 102b connected to a vacuum exhaust pump (not shown) are connected to the air suction passages 100a and 100b, respectively.

  Although not shown, open / close control valves are inserted in the air supply pipes 90a, 90b, 98a, 98b and the exhaust pipes 94a, 94b, 102a, 102b, respectively. By switching and controlling each open / close control valve by the control device, an air curtain is always formed at the substrate carry-in port 82 and the substrate carry-out port 84, so that the internal atmosphere and the external atmosphere of the chamber 80 are always reliably separated. It is comprised so that. This switching operation is performed as follows.

  First, as shown in FIG. 7, when the substrate W exists in the chamber 80, a pair of upper and lower air discharge passages 88a, 88b; 96a, 96a, Air is discharged from the air discharge port 96b toward the substrate conveyance path, and each of the discharged air rebounds on the upper and lower surfaces of the substrate W to form a pair of upper and lower air suction passages 92a, 92b; , 100b is sucked and exhausted through the air suction port. As a result, air curtains are formed on the upper and lower surfaces of the substrate W at the substrate carry-in port 82 and the substrate carry-out port 84 of the chamber 80, respectively.

  Next, as shown in FIG. 8, when the substrate W is not present in the chamber 80, the upper and lower sides (the upper side in the illustrated example) of the substrate carry-in port 82 and the substrate carry-out port 84 of the chamber 80, respectively. Air is discharged from the air discharge ports of the air discharge passages 88a and 96a toward the substrate transport path, and the discharged air enters the air suction passages 92b and 100b on the lower side or the upper side (lower side in the illustrated example). Inhaled and exhausted through air inlet. In this way, air is discharged from the air discharge port on only one side of the pair of upper and lower air discharge passages 88a and 88b; 96a and 96b, and the pair of upper and lower air suction passages 92a and 92b; Among these, air is sucked into the air suction port only on the side facing the air discharge passage through which air is discharged, whereby air curtains are formed at the substrate carry-in port 82 and the substrate carry-out port 84 of the chamber 80, respectively.

  As shown in FIG. 9, when the front end of the substrate W is located in the chamber 80, the substrate is transferred from the air discharge ports of the pair of upper and lower air discharge passages 88a and 88b at the substrate carry-in port 82 of the chamber 80. Air is discharged toward the road, and the discharged air rebounds on the upper and lower surfaces of the substrate W, and is sucked into the pair of upper and lower air suction passages 92a and 92b through the air suction ports. And exhausted. As a result, air curtains are formed on the upper and lower surfaces of the substrate W at the substrate carry-in port 82 of the chamber 80, respectively. On the other hand, at the substrate carry-out port 84 of the chamber 80, air is discharged from the air discharge port of the air discharge passage 96a on the upper side or the lower side (upper side in the illustrated example) toward the substrate transport path, and the discharged air Is sucked through the air suction port and exhausted into the air suction passage 100b on the lower side or the upper side (lower side in the illustrated example). As a result, an air curtain is formed at the substrate carry-out port 84 of the chamber 80.

  Further, as shown in FIG. 10, when the rear end of the substrate W is located in the chamber 80, the air discharge passage 88a on the upper side or the lower side (upper side in the illustrated example) at the substrate carry-in port 82 of the chamber 80. The air is discharged from the air discharge port toward the substrate conveyance path, and the discharged air is sucked into the air suction passage 92b on the lower side or the upper side (lower side in the illustrated example) through the air suction port. Exhausted. As a result, an air curtain is formed at the substrate carry-in port 82 of the chamber 80. On the other hand, at the substrate carry-out port 84 of the chamber 80, air is discharged from the air discharge ports of the pair of upper and lower air discharge passages 96 a and 96 b toward the substrate transport path. Rebound on the upper and lower surfaces of the air, and are sucked and exhausted through the air suction port into the pair of upper and lower air suction passages 100a and 100b. Thereby, air curtains are formed on the upper and lower surfaces of the substrate W at the substrate carry-out port 84 of the chamber 80, respectively.

  In the description of each embodiment described above, the chambers 10, 32, 48, 64, and 80 are fixed and transport the substrate W. However, the chamber and the substrate move relative to each other to process the substrate. It should be done. In the apparatus shown in the schematic diagram of FIG. 11A, the chamber 106 in which the processing tool 104 is disposed is fixed and the substrate W is transferred like the substrate processing apparatus according to each of the above embodiments. It is a thing. In the apparatus shown in FIG. 11B, the substrate W is fixed and the chamber 106 is moved relative to the substrate W. In the apparatus shown in FIG. 11C, the substrate W and the chamber 106 are moved in the same direction, and the moving speed of the chamber 106 is made slower than the transfer speed of the substrate W. The substrate W and the chamber 106 may be moved in directions opposite to each other. In the apparatus shown in FIG. 11D, the chamber 106a in which the processing tool 104a is disposed and the chamber 106b in which the processing tool 104b is disposed are connected and fixed in the substrate transport direction, and these chambers 106a are fixed. , 106b, a configuration example in which the substrate W is transported. Of course, as in (b) and (c) of FIG. 11, the substrate W is fixed and the chambers 106 a and 106 b are moved relative to the substrate W, or the chambers 106 a and 106 b are moved in the same direction as the substrate W. You may make it move at a slower speed. Further, the apparatus shown in FIG. 11E fixes the chamber 110 in which the processing tools 108a and 108b are respectively disposed above and below the substrate conveyance path, and the substrate W is fixed to the chamber 110. It is the example of a structure which conveyed. Of course, as in (b) and (c) of FIG. 11, the substrate W is fixed and the chamber 110 is moved relative to the substrate W, or the chamber 110 is moved in the same direction as the substrate W at a speed slower than the substrate transport speed. You may make it move.

It is a figure which shows one example of embodiment of this invention and shows the schematic structure of a substrate processing apparatus typically. It is a schematic plan view of the chamber of the substrate processing apparatus shown in FIG. It is a figure which shows typically schematic structure of the substrate processing apparatus which is another embodiment of this invention. It is the schematic of the ultraviolet irradiation part which shows another embodiment of this invention and makes one of the structural units of a substrate processing apparatus. FIG. 5 is a cross-sectional view of the chamber of the substrate processing apparatus according to the present invention, taken along the substrate transport direction, and is a cross-sectional view taken along arrows IV-IV in FIG. 5. FIG. 6 is a cross-sectional view of the chamber shown in FIG. 5 in a direction orthogonal to the substrate transfer direction, and is a cross-sectional view taken along the line V-V in FIG. 4. It is sectional drawing along the substrate conveyance direction which shows another structural example of the chamber of the substrate processing apparatus which concerns on this invention. FIG. 8 is a sectional view of the chamber, showing a state different from the state shown in FIG. 7. FIG. 9 is a sectional view of the chamber, showing a state different from the states shown in FIGS. 7 and 8. FIG. 10 is a sectional view of the chamber, showing a state different from the states shown in FIGS. 7 to 9. (A) thru | or (e) is a schematic diagram which each shows the aspect of relative movement of a board | substrate and a chamber.

Explanation of symbols

W Substrate 10, 32, 48, 64, 80, 106, 106a, 106b, 110 Chamber 12, 34, 50, 66, 82 Chamber substrate inlet 14, 36, 52, 68, 84 Chamber substrate outlet More than 16 Sonic / high pressure jet cleaning / water washing processing unit 18 Air knife drying processing unit 20, 22 Roller conveyor 24, 40, 56, 72a, 72b Gas supply port 26, 42, 76a, 76b Exhaust port 28, 44, 58, 74a, 74b , 90a, 90b, 98a, 98b Air supply pipe 30, 46, 78a, 78b, 94a, 94b, 102a, 102b Exhaust pipe 38 Etching section 54, 70a, 70b, 86, 104, 104a, 104b, 108a, 108b Tool 60 Exhaust / drain port 62 Exhaust / drain tube 88a, 88b, 96a, 96 Air discharge passage 92a, 92b, 100a, 100b air suction passage

Claims (5)

A sealed chamber having a substrate inlet and a substrate outlet;
A processing tool disposed inside the chamber for performing a predetermined process on the substrate;
Moving means for moving the substrate relative to the processing tool;
In a substrate processing apparatus comprising:
The width of the chamber is equal to or larger than the dimension of the substrate in the direction perpendicular to the relative movement direction, and the length of the chamber is smaller than the dimension of the substrate in the relative movement direction; A substrate comprising gas supply means and gas discharge means for relatively moving a chamber in which a processing tool is disposed and a substrate, and isolating the internal atmosphere and the external atmosphere of the chamber. Processing equipment. The substrate processing apparatus according to claim 1,
The substrate, wherein the gas supply means is a purge gas supply means for supplying a purge gas into the chamber, and the gas discharge means is an exhaust means for exhausting the purge gas from the chamber. Processing equipment. The substrate processing apparatus according to claim 2,
A substrate processing apparatus comprising the purge gas supply means and the exhaust means in an upper space and a lower space of a relative movement path of the substrate, respectively. The substrate processing apparatus according to claim 1,
The gas supply means is provided on each of an upper side and a lower side of the substrate inlet of the chamber with a relative movement path of the substrate interposed therebetween, and has a gas discharge port opposed to the substrate relative to the relative movement path. A pair of upper and lower inlet side gas discharge means for discharging curtain gas from the gas discharge port toward the relative movement path of the substrate, and a relative movement path of the substrate at the substrate outlet of the chamber; Are disposed on the upper side and the lower side of the substrate, respectively, and have gas discharge ports facing and approaching the relative movement path of the substrate, respectively, from the gas discharge port toward the relative movement path of the substrate. A pair of upper and lower outlet side gas discharge means for discharging curtain gas,
The gas discharge means is disposed on the upper side and the lower side of the substrate inlet of the chamber with the relative movement path of the substrate interposed therebetween, and has a gas suction port opposed to the relative movement path of the substrate. A pair of upper and lower inlet side gas suction means each for sucking curtain gas through the gas suction port, and upper and lower sides of the substrate outlet of the chamber with a relative movement path of the substrate interposed therebetween And a pair of upper and lower outlet side gas suction means respectively having gas suction ports facing each other in close proximity to the relative movement path of the substrate and sucking curtain gas through the gas suction ports, respectively. Yes,
When a substrate is present at the substrate inlet of the chamber, the pair of upper and lower inlet side gas discharge means and the pair of upper and lower inlet side gas suction means are operated, and the substrate is placed at the substrate outlet of the chamber. When present, the pair of upper and lower outlet side gas discharge means and the pair of upper and lower outlet side gas suction means are respectively operated. When no substrate is present at the substrate inlet of the chamber, the upper side Alternatively, when the lower-side inlet-side gas discharge means and the lower-side or upper-side inlet-side gas suction means are respectively operated and no substrate is present at the substrate outlet of the chamber, the upper-side or lower-side outlet side A substrate processing apparatus comprising switching means for switching the gas discharge means and the lower or upper outlet side gas suction means to operate. The substrate processing apparatus according to claim 1, wherein:
A substrate processing apparatus, wherein a plurality of the chambers are connected in the relative movement direction of the substrate.

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