JP2011181363A - Organic laminated film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laminated film having high electric conductivity in a simply manner by only laminating a tetrathiafulvalene derivative and an electron-accepting compound without being subjected to a complicated process. <P>SOLUTION: The laminated film of the tetrathiafulvalene derivative and the electron accepting compound expressed by general formula (I). In the formula (I), X is an atom selected from a carbon atom or a sulfur atom or a nitrogen atom and the atoms may be the same as or different from one another. When the carbon atom and the nitrogen atom are selected for Xs, R<SB>1</SB>-R<SB>16</SB>are groups selected from hydrogen atoms, halogen atoms, substituted and unsubstituted alkyl groups or alkoxy groups or thioalkoxy groups and the groups may be the same as or different from one another. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an organic charge transfer complex film expected to be applied to organic conductors, organic superconductors, organic magnetic materials, organic thermoelectric elements, organic electrochromic elements, organic electroluminescent elements, and the like.

  Organic electronic devices are excellent in flexibility and portability, and their use value is expected to become higher in the future. For this reason, research and development of devices that are central to organic electronics, such as organic semiconductors, organic LEDs, and organic solar cells, has been actively conducted. However, organic materials are inherently insulators, and even in these devices, many electrode parts are made of metal. In order to take advantage of the characteristics of organic compounds such as flexibility and portability, the advent of organic electrodes that can be used in these organic electronics is awaited.

  As an example showing the possibility of an organic electrode, a charge transfer complex composed of an electron donor molecule and an electron acceptor molecule is known. The fact that this charge transfer complex exhibits metallic conduction became known in 1973 using tetrathiafulvalene (TTF) -tetracyanoquinodimethane (TCNQ), and then BDTTF, TSF, and F1TCNQ shown below. , F2TCNQ, F4TCNQ (see Non-Patent Document 1, Appl. Phys. Lette., 88, 073504, (2006), and Non-Patent Document 2, Adv. Matterials, 2007, 19, 3248). Yes. In addition, many other applications of this charge transfer complex are expected, and examples thereof include organic superconductors, organic magnetic materials, organic electrochromic elements, organic electroluminescent elements, and organic thermoelectric elements.

  As a film forming method, for example, a method of bonding a TTF single crystal and a TCNQ single crystal (Japanese Patent Laid-Open No. 2005-268715 of Patent Document 1), a method using a mixed crystal of TTF-TCNQ (Chem. Matter, Non-Patent Document 3) 19, 6382, (2007)), a method using a vacuum co-evaporation method (Japanese Patent Laid-Open No. 5-339379), and a method of forming a mixed film using an ink jet method (Japanese Patent Laid-Open No. 2007-2007). No. 305807) is known.

However, methods using single crystals or mixed crystals have not yet been put into practical use due to their special characteristics, and there are still problems in the uniform dispersibility of the two components in the mixed film by co-evaporation or the inkjet method. Due to the complexity of the system, no practical device has been achieved.
Furthermore, the conventional tetrathiafulvalene derivative has a strong donor property, but at the same time, the ionization potential is too low, and it has a defect of poor durability against oxygen.
That is, an organic film having high electrical conductivity is awaited due to an organic electrode having excellent processability applicable to organic electronics, but has not yet been put into practical use for the above reasons.

  An object of the present invention is to provide a laminated film having a simple and high electrical conductivity simply by laminating a tetrathiafulvalene derivative and an electron-accepting compound without going through complicated steps. These are particularly effective for organic wiring, for example, and can be applied to organic conductors, organic superconductors, organic magnetic materials, organic thermoelectric elements, organic electrochromic elements, organic electroluminescent elements, and the like.

As a result of intensive studies to achieve the above object, the present inventors have found that a tetrathiafulvalene derivative having a specific structure and an electron accepting film are laminated to be effective for the above object. It came to be completed.
That is, the present invention includes the following laminated films (1) to (2).
(1) “Laminated film of tetrathiafulvalene derivative represented by general formula (I) and electron-accepting compound”

(In formula (I), X is an atom selected from a carbon atom, a sulfur atom or a nitrogen atom, and may be the same or different. In the case where a carbon atom and a nitrogen atom are selected as X, R _{1 to} R ₁₆ Are groups selected from a hydrogen atom, a halogen atom, a substituted and unsubstituted alkyl group, an alkoxy group or a thioalkoxy group, which may be the same or different. ";
(2) “The laminated film according to (1), wherein the electron-accepting compound is fullerene”.

According to the present invention, it is possible to provide a laminated film having a simple and high electrical conductivity simply by laminating a tetrathiafulvalene derivative and an electron-accepting compound without going through complicated steps. Is particularly effective for organic wiring, for example, and is excellent in that it can be applied to organic conductors, organic superconductors, organic magnetic materials, organic thermoelectric elements, organic electrochromic elements, organic electroluminescent elements, etc. The effect is demonstrated.
That is, according to the present invention, it is possible to obtain a laminated film having high electrical conductivity advantageous for a manufacturing process useful for an organic electronic device.

It is the schematic of the laminated film of this invention. It is a figure which shows the electric current-voltage (IV) characteristic of a bis (anthra [2,3-d]) tetrathiafulvalene / fullerene laminated film. It is a figure which shows the electric current-voltage (IV) characteristic of a 5,5'-bis (4-hexyloxyphenyl) -2,2'-bithiophene / fullerene laminated film.

  One of the characteristics of the present invention is that a tetrathiafulvalene (TTF) derivative represented by the following general formula (I) is used as an electron donating material.

(In formula (I), X is an atom selected from a carbon atom, a sulfur atom or a nitrogen atom, and may be the same or different. In the case where a carbon atom and a nitrogen atom are selected as X, R _{1 to} R ₁₆ Are groups selected from a hydrogen atom, a halogen atom, a substituted and unsubstituted alkyl group, an alkoxy group or a thioalkoxy group, which may be the same or different. "
These tetrathiafulvalene (TTF) derivatives can be used as one kind or a mixture of plural kinds.
As is known for the TTF / TCNQ charge transfer complex, the tetrathiafulvalene structure has a π-electron at the heterocyclic moiety of 7π, and tends to be 6π that emits one electron and satisfies the Hückel rule. Strong electron donor property. Due to this electron donor property, it tends to be a radical cation and is stable in the state of the radical cation, so that a charge transfer complex is easily formed by stacking electron accepting materials.

  However, the conventional tetrathiafulvalene derivative has an ionization potential that is too low due to this strong donor property, and has poor durability against oxygen. The material represented by the general formula (I) has a molecular structure in which the conjugated system of the molecule is expanded as compared with a conventional tetrathiafulvalene derivative. By extending the conjugated system, it is suggested that the donor property of tetrathiafulvalene may be slightly weakened, but the effect is small, rather than oxygen, which causes degradation, compared to conventional tetrathiafulvalene derivatives. We can expect big merit that stability improves. However, the electron-accepting compound generally has a much higher ionization potential than the electron-donating compound, and there is no need to increase the ionization potential unlike the electron-donating compound. Can be used.

  Further, the tetrathiafulvalene derivative represented by the general formula (I) has a smooth film-forming property by a vacuum deposition method, and the tetrathiafulvalene derivative layer and the electron-accepting compound can be used without using a co-evaporation method or the like. It can be expected that a charge transfer complex is efficiently generated only by laminating layers.

Specific examples of the tetrathiafulvalene derivative used in the present invention are shown below.
Examples of R _{1 to} R ₁₆ in the general formula (I) include the following.
A group selected from a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, an alkoxy group or a thioalkoxy group, which may be the same or different.
The substituted or unsubstituted alkyl group is a linear, branched or cyclic alkyl group having 1 or more carbon atoms, and these alkyl groups are further halogen atoms (for example, fluorine atom, chlorine atom, bromine atom, iodine atom). , A cyano group, a phenyl group, or a phenyl group substituted with a linear or branched alkyl group.
Specifically, methyl group, ethyl group, n-propyl group, i-propyl group, t-butyl group, s-butyl group, n-butyl group, i-butyl group, pentyl group, hexyl group, heptyl group, Octyl group, nonyl group, decyl group, undecyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecane group, hexadecyl group, heptadecyl group, octadecyl group, 3,7-dimethyloctyl group, 2-ethylhexyl group, trifluoromethyl group , Trifluorooctyl group, trifluorododecyl group, trifluorooctadecyl group, 2-cyanoethyl group, benzyl group, 4-chlorobenzyl group, 4-methylbenzyl group, cyclopentyl group, cyclohexyl group and the like.

In the case of a substituted or unsubstituted alkoxy group or thioalkoxy group, specific examples include those in which an oxygen atom or a sulfur atom is inserted into the bonding position of the alkyl group to form an alkoxy group or a thioalkoxy group.
Furthermore, detailed derivatives of the present invention are shown.

As such a tetrathiafulvalene derivative, a conventionally known one can be used, and it can be synthesized by a known synthesis method, and we have already proposed (Japanese Patent Application No. 2009-073990 of Patent Document 4). No., Japanese Patent Application No. 2010-000319 of Patent Document 5, and Japanese Patent Application No. 2010-026729 of Patent Document 6) can be used (to avoid duplication, patent Details of the techniques described in Documents 4 to 6 are omitted here).
That is, for example, it can be produced by a coupling reaction of a raw material 1,3-dithiol-2-one compound (see J. Org, Chem., 2000, 65, 5794-5805 of Non-Patent Document 4). it can. The raw material 1,3-dithiol-2-one compound in this case is, for example, J. Org. Chem. 1994, 59, 6519-6527 of Non-Patent Document 5, Chem. Commun. 1998, 361 of Non-Patent Document 6. -362, Chem. Commun. 1998, 2197-2198, Non-Patent Document 7, Tetrahedron Letters 2000, 41, 2091-2095, Non-Patent Document 8, well-known reaction between genofil and diene corresponding to the desired structure A quinone compound obtained by Diels-Alder reaction (using Lewis acid as a catalyst) is reduced to a hydroxy compound with a metal hydride compound, and 1,3-dithiol-2-thione is obtained by intramolecular dehydration of the hydroxy compound. Obtained by a method such as conversion to a 1,3-dithiol-2-one compound from this compound (for this conversion reaction, see J. Org, Chem., 2000, 65, 5794-5805). can do.

"Outline of laminated film"
The outline of the structure of the laminated film according to the present invention will be described below with reference to the drawings.
1A to 1F are schematic structures of a laminated film according to the present invention. The tetrathiafulvalene derivative layer (1) according to the present invention contains the tetrathiafulvalene derivative represented by the general formula (I) as a main component. The electron-accepting compound layer (2) of the present invention is not particularly limited as long as it has electron-accepting property, but fullerene having high electron-accepting property is particularly preferable.

  In the present invention, the laminated film can be provided on a support, and for example, commonly used substrates such as glass, silicon, and plastic can be used. When characteristics such as flexibility, weight reduction, low cost, and impact resistance of a device to which the laminated film of the present invention is applied are desired, a plastic sheet is preferably used as a support.

  Examples of the plastic sheet include polyethylene terephthalate, polyethylene naphthalate, polyethersulfone, polyetherimide, polyetheretherketone, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate. Is mentioned.

[Tetrathiafulvalene derivative layer, electron-accepting compound layer]
The film forming methods of the tetrathiafulvalene derivative layer and the electron accepting compound layer according to the present invention are not particularly limited, but a thin film can be formed by, for example, a vapor deposition method. Each compound is heated in vacuum to form a vapor, which is deposited in the desired area to form a thin film.

In the laminated film of the present invention, both the tetrathiafulvalene derivative layer and the electron-accepting compound layer are not particularly limited, but are uniform thin films (that is, the carrier transport properties of the tetrathiafulvalene derivative layer and the electron-accepting compound layer). It is preferable that the thickness be selected so as to form a gap or a hole having no adverse effect).
The thickness of the laminated film is generally 1 μm or less, particularly preferably 5 to 200 nm.

[Modification of organic semiconductor / insulating film interface such as HMDS (hexamethylene disilazane)]
In the laminated film of the present invention, an organic thin film may be provided between these layers for the purpose of improving the adhesion between the base material and the tetrathiafulvalene derivative layer and reducing the leakage current. The organic thin film is not particularly limited as long as it does not adversely affect the tetrathiafulvalene derivative layer. For example, an organic molecular film or a polymer thin film can be used.
Examples of the organic molecular film include coupling agents using octadecyltrichlorosilane, octyltrichlorosilane, hexamethylene disilazane, and the like as specific examples. As the polymer thin film, the above-described polymer insulating film materials can be used, and these may function as a kind of insulating film. The organic thin film may be subjected to an anisotropic treatment by rubbing or the like.

[Lead electrode, protective layer]
Moreover, the laminated film of this invention can provide an extraction electrode as needed. As shown in FIGS. 1A to 1F, the extraction electrode may be between the tetrathiafulvalene derivative layer and the electron accepting layer, or may be on the electron accepting layer, or the tetrathiafulvalene derivative. It may be under the layer.
The laminated film of the present invention may be provided with a protective layer as necessary for protection from moisture, air and gas, or for the convenience of device integration.

[Applied devices]
The laminated film of the present invention can be used as an electrode for driving display image elements such as liquid crystal, organic EL, and electrophoresis, and by integrating them, a so-called “electronic paper” display can be manufactured. is there.

  Hereinafter, the present invention will be described more specifically and in detail by way of examples. However, these examples are for explaining the present invention and are not intended to limit the present invention. In the following description, “parts” represents “parts by weight” unless otherwise specified.

Using bis (anthra [2,3-d]) tetrathiafulvalene: (1), a laminated film having the structure shown in FIG.
An N-type silicon substrate having a thermal oxide film having a thickness of 300 nm was immersed in concentrated sulfuric acid for 24 hours for cleaning. The cleaned silicon substrate was immersed in a toluene solution (1 mM) of a silane coupling agent (octyltrichlorosilane) and subjected to ultrasonic treatment for 5 minutes to form a monomolecular film on the surface of the silicon oxide film.

Bis (anthra [2,3-d]) tetrathiafulvalene: (1) is vacuum-deposited on the substrate prepared above (back pressure ^{-10 -4} Pa, deposition rate 0.1 Å / s, film thickness: 25 nm) to form a tetrathiafulvalene derivative layer. Subsequently, fullerene was vacuum-deposited (back pressure ˜10 ⁻⁴ Pa, deposition rate 0.1 Å / s, film thickness: 40 nm) to form an electron-accepting compound layer.
Furthermore, in order to measure the electrical conductivity of the laminated film, the cathode was obtained by vacuum deposition of gold using a shadow mask (back pressure ~ 10 ^-4 Pa, deposition rate 1 ~ 2 Å / s, film thickness: 50 nm), An anode electrode was formed (channel length 50 μm, channel width 2 mm).

  As a result of evaluating the current-voltage characteristics of the laminated film thus obtained using a semiconductor parameter analyzer B1500 manufactured by Agilent, it showed a high electric conductivity characteristic of 0.2 S / cm.

Using the laminated film formed in the same manner as in Example 1 except that F ₄ TCNQ was used for the electron-accepting layer in Example 1, current-voltage measurement was performed in the same manner as in Example 1.

Using the laminated film formed in the same manner as in Example 1 except that F ₂ TCNQ was used for the electron-accepting layer in Example 1, current-voltage measurement was performed in the same manner as in Example 1.

Using the laminated film formed in the same manner as in Example 1 except that F ₁ TCNQ was used for the electron-accepting layer in Example 1, current-voltage measurement was performed in the same manner as in Example 1.

[Comparative Example 1]
In Example 1, instead of bis (anthra [2,3-d]) tetrathiafulvalene (1) as an electron-donating compound, 5,5′-bis (4-hexyloxyphenyl) -2 having the following structure 2,2′-bithiophene: Current-voltage measurement was carried out in the same manner as in Example 1 using the laminated film produced in the same manner as in Example 1 except that (23) was used.

  The results of Examples 1 to 4 and Comparative Example 1 are summarized in Table 2. In Table 2, ○ indicates that a charge transfer complex is formed at the interface of the laminated film and an ohmic junction (linearity in the IV graph) can be confirmed. Further, when high electrical conductivity of 0.001 S / cm or more is confirmed, When high electrical conductivity (0.1 S / cm or more) is confirmed, x represents low electrical conductivity (less than 0.001 S / cm).

  From these results, tetrathiafulvalene represented by the general formula (I) can form a charge transfer complex layer due to its high electron donor property regardless of the material of the electron accepting compound layer, and high electrical conductivity can be obtained. I understand that. Further, in Comparative Example 1, when 5,5′-bis (4-hexyloxyphenyl) -2,2′-bithiophene (23) having a low donor property is used, charge transfer is performed even when fullerene having a high electron accepting property is used. It can be seen that no complex is formed and the electrical conductivity is low. FIG. 2 and FIG. 3 show the current-voltage measurement results of Example 1 and Comparative Example 1, which have particularly high electrical conductivity, respectively.

  In FIG. 3, the linearity (ohmic junction) is lost as apparent from FIG. 2, and the electrical conductivity is almost −5 order (S / cm), which can be said to be almost an insulating film. Thus, even if the electron accepting layer is the same, the charge transfer complex film is not formed when the electron donor property of the electron donating layer is low.

1 Tetrathiafulvalene derivative layer 2 Electron accepting compound layer 3 Anode electrode 4 Cathode electrode 5 Base material

JP 2005-268715 A JP-A-5-339379 JP 2007-305807 A Japanese Patent Application No. 2009-073990 Japanese Patent Application No. 2010-000319 Japanese Patent Application No. 2010-026729

Appl. Phys. Lette., 88, 073504, (2006) Adv. Matterials, 2007, 19, 3248 Chem. Matter, 19, 6382, (2007) J. Org, Chem., 2000, 65, 5794-5805 J. Org. Chem. 1994, 59, 6519-6527 Chem. Commun. 1998, 361-362, Chem. Commun. 1998, 2197-2198, Tetrahedron Letters 2000, 41, 2091-2095

Claims (2)

Laminated film of tetrathiafulvalene derivative represented by general formula (I) and electron accepting compound

(In formula (I), X is an atom selected from a carbon atom, a sulfur atom or a nitrogen atom, and may be the same or different. In the case where a carbon atom and a nitrogen atom are selected as X, R _{1 to} R ₁₆ Are groups selected from a hydrogen atom, a halogen atom, a substituted and unsubstituted alkyl group, an alkoxy group or a thioalkoxy group, which may be the same or different.   The laminated film according to claim 1, wherein the electron-accepting compound is fullerene.

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