JP2009059483A - Method and apparatus for measuring variation in plasma component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus to allow highly stable operation by automatically and continuously monitoring the operation status, and performing plasma operation condition control that is more advanced than conventionally performed to allow manufacturing of products and processed articles and achieving uniform processing speed, homogeneity, improved performance, and high degree of processing, in a plasma process using gas as a raw material. <P>SOLUTION: The component variation measuring method measures a physical property value of the gas before and after the generation of plasma, and detect the variation of the gas components before and after the generation of plasma from the correlation between the physical property value and the components of the gas in the plasma apparatus. The physical property value is viscosity, and a quartz oscillator sensor 1, a quartz friction vacuum gauge or a spinning rotor gauge is used as a device for measuring the physical property value. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method and apparatus for measuring a component change in plasma.

  In the plasma process, there are various conditions to be controlled such as the type / flow rate of the supply gas, the pressure in the apparatus, the substrate temperature / potential, the supply power of the high frequency power, and the supply electrode temperature.

  When the above conditions are changed, the amount of radical ions generated in the plasma changes, and as a result, the amount of radical ions that reach the substrate also changes. Therefore, it is necessary to precisely optimize the above conditions.

  In addition, when performing plasma operation repeatedly for a long time, the plasma operation state changes due to various factors, and sometimes the plasma itself stops. In an actual plasma process, it is necessary to control the conditions so that such a stop does not occur. Further, when the plasma stops despite the above control, it is necessary to detect the stop phenomenon immediately.

  In actual plasma processes, the optimization conditions are naturally different in each process. As a method for finding the optimization conditions, manufacturing and processing are performed by varying the above-mentioned various conditions, and the results are examined. Trial and error methods have been carried out.

  However, in general, the trial and error method as described above is very complicated, and the number of change conditions is very large. Further, in an actual plasma apparatus, the plasma component may change over time due to the deposition of the radical ions on the inner wall, the plasma electrode, and the substrate installation location, and etching them with plasma.

  Because of the above situation, various plasma diagnostics that directly measure the chemical species present in the plasma in order to optimize the plasma components as a method of optimizing the plasma conditions in the plasma process. Laws have been developed and applied.

  As a conventional control method for plasma process equipment, a method for measuring emission species present in plasma by spectroscopically analyzing light emitted from plasma, and a method for performing stable operation of generated plasma using this method have been proposed. ing. Further, a method has been proposed in which the potential in the plasma space is measured and the operating state of the plasma is monitored by this change.

  A semiconductor manufacturing condition setting method and apparatus for setting various plasma conditions in a semiconductor manufacturing apparatus using plasma are known (see Patent Document 1).

Further, in a concentration measuring method and a concentration measuring device for two types of mixed gas, a method for measuring the concentration of a mixed gas composed of two types of gas using a quartz friction pressure gauge or the like has been proposed (see Patent Document 2).
JP 2000-21854 A Japanese Patent No. 3336384

  As described above, the actual gas components and other plasma conditions in the apparatus that can change each time cannot be maintained at the optimum conditions by simply operating the conventional plasma conditions by trial and error.

  In addition, regarding the measurement of components in the plasma apparatus, the plasma diagnostic method described above can measure only those having the property of mainly emitting light, so other radicals / ions and neutral molecules can be measured at all. Can not.

  Furthermore, for radical ions that are mainly subject to plasma diagnosis, it is impossible to pass the laser beam used for measurement from the laser inlet / outlet in the entire range due to restrictions on the internal structure of the device. It is impossible to measure all the spaces inside.

  As for the supply gas, which is the neutral molecule that is the most focused here, since it is an electrically neutral and stable molecule, it does not normally emit light. Is impossible to do.

  For these supply gases, some molecules have been reported to be measured by the coherent anti-Raman-Stokes method, but this method is expensive because it requires the use of multiple expensive lasers. Is difficult to use in an actual process apparatus, and it is only possible to measure only a part of molecules with good target.

  Usually, the supply gas is controlled by a gas flow rate control device (MFC) and introduced into the device. When there are two or more types of supply gas, each gas is introduced independently through MFC and the flow rate of each gas is controlled. Especially when there is a difference in molecular weight and viscosity between the gases to be introduced. The flow rate ratio and the actual partial pressure of gas in the apparatus may be different, and precise control of the partial pressure of gas in the apparatus is impossible.

  This shift is mainly caused by a large effective pumping speed for gases with small molecular weight and viscosity, but this effective pumping speed is not only different in the device, but also due to differences in the shape and thickness of the vacuum piping connected to it. Therefore, it is difficult to grasp the actual partial pressure in the apparatus unless actual measurement is performed.

  In particular, in the case of introducing a large amount of gas, the partial pressures may not be uniform and distributed in the apparatus, and such non-uniformity is not preferable because it naturally leads to non-uniformity of the product. .

  In the case of the plasma process, since the supply gas is decomposed only in the part where the plasma exists, the partial pressure ratio of the supply gas is inevitably different from the surrounding area, and this difference results in the distribution on the product. It is not preferable because it leads to a difference. Also, there is usually a partial pressure distribution because of the difference in decomposition speed even in plasma.

  On the other hand, as the application of the plasma process spreads, it is necessary to monitor the plasma operation status in order to improve the yield of the plasma process, and to stop and inspect the process promptly when stopped.

  Normally, devices such as the power meter, gas flow meter, and pressure gauge that come with the plasma process equipment cannot detect such abnormalities that occur during plasma operation, so it is possible to detect operational abnormalities quickly. Not only can the product be defective when an abnormality occurs, but also time loss due to subsequent maintenance becomes a problem.

  Further, a pressure gauge such as a quartz friction pressure gauge described in Patent Document 2 is unsuitable for moving and measuring in the apparatus due to its size, and when measuring a gas component in a space where plasma exists, Since the tip of the pressure gauge is made of metal, charged particles in the plasma flow into these gauges and disturb the plasma, so that it is considered difficult to use directly in an actual process.

  In view of the above circumstances, in the plasma process using a gas as a raw material, the present invention performs highly stable operation by constantly monitoring the operation state at all times, and performs more advanced plasma operation condition control than the conventional one, and thereby the product and the coating. It is an object of the present invention to provide a plasma component change measuring method and apparatus for uniformizing, homogenizing, improving performance, and increasing the processing speed of a processed product.

  In order to solve the above-mentioned problems, the present invention measures the gas physical property values before and after the plasma generation, and detects the change in the gas components before and after the plasma generation from the correlation between the gas physical property values and the gas components in the plasma apparatus. Before and after plasma generation, characterized in that the physical property value is viscous and a quartz vibrator sensor, a quartz friction vacuum gauge, or a spinning rotor gauge is used as a measuring device for measuring the physical property value. The component change measuring method is provided.

  In order to solve the above-mentioned problems, the present invention measures the gas physical property values before and after the plasma generation, and detects the change in the gas components before and after the plasma generation from the correlation between the gas physical property values and the gas components in the plasma apparatus. The component change measuring method is to measure the physical property value with viscosity, and use a quartz friction vacuum gauge or a spinning rotor gauge as a measuring device for measuring the physical property value, and measure the physical property value with an absolute pressure gauge. Provided is a component change measuring method before and after plasma generation, which uses a value excluding the influence of the absolute pressure.

  In order to solve the above-mentioned problems, the present invention measures the gas physical property values before and after the plasma generation, and detects the change in the gas components before and after the plasma generation from the correlation between the gas physical property values and the gas components in the plasma apparatus. Before and after plasma generation, characterized in that the physical property value is viscous, and a quartz resonator sensor, a quartz friction vacuum gauge, or a spinning rotor gauge is used as the measurement device for measuring the physical property value. A component change measuring apparatus is provided.

  In order to solve the above-mentioned problems, the present invention measures the gas physical property values before and after the plasma generation, and detects the change in the gas components before and after the plasma generation from the correlation between the gas physical property values and the gas components in the plasma apparatus. A component change measuring device, wherein the physical property value is viscous, and a quartz friction vacuum gauge or a spinning rotor gauge is used as a measuring device for measuring the physical property value, and the physical property value is measured with an absolute pressure gauge from the measurement result Provided is a component change measuring apparatus before and after plasma generation, characterized in that a value excluding the influence of the absolute pressure is used.

  A spatial distribution of the physical property values in the plasma device may be obtained by moving the measuring device.

  When measuring the spatial distribution, especially when approaching the plasma, perform simultaneous temperature measurement, or correct the temperature by utilizing the fact that the oscillation frequency of the quartz crystal sensor is correlated with the ambient temperature, and plasma You may make it exclude the influence of the temperature change which generate | occur | produces when measuring the inside.

  Plasma conditions are controlled by determining the plasma component flux from the product based on the spatial distribution of the plasma component obtained by changing the distance to the electrode where the plasma is generated, and various characteristics such as the electrical properties of the plasma product. May be controlled.

  The gas component may be monosilane and hydrogen.

  The plasma component change measuring apparatus according to the present invention uses a small crystal resonator sensor having a size of 1 cm or less instead of a quartz friction pressure gauge, and further conducts charged particles from plasma through the crystal resonator sensor. By covering with a cover made of non-insulating material, disturbance to the plasma is prevented during measurement, and the influence of the temperature from the plasma is obtained by measuring the ambient temperature or from the sensor by the resonance frequency that is highly correlated with the temperature. It is a measuring device that can measure even in the vicinity of plasma by correcting the output of the sensor and calibrating the effect of temperature from the plasma. Thereby, the spatial distribution of the gas phase component around the plasma for obtaining the flux of the component to the production section can be obtained.

  According to the plasma component change measuring method and apparatus according to the present invention, in a plasma process using gas as a raw material, the operation status is automatically monitored at all times to perform highly stable operation, and more advanced plasma operation condition control than before is performed. It is possible to uniformize, homogenize, improve the performance, and enhance the processing speed of the manufactured product and the object to be processed.

  The best mode for carrying out the plasma component change measuring method and apparatus according to the present invention will be described below with reference to the drawings based on the embodiments.

  The plasma component change measuring method and apparatus according to the present invention provides a method and apparatus for measuring the spatial distribution of gas components existing in the apparatus, which is impossible with the conventional plasma diagnostic method, and thus the plasma process is performed. It is a method and apparatus that can improve the production speed, performance, uniformity, homogeneity, yield, and the like of a product by controlling it more precisely.

  Specifically, the correlation between the physical property value of the gas in the plasma apparatus and its component is obtained, and the change of the gas component that changes when the plasma is generated with this as a reference is detected by measuring the physical property value. . At this time, the spatial distribution of the component change is further measured to make the product uniform and uniform.

  Viscosity is used as the physical property value, and measurement is performed using a quartz vibrator sensor and an absolute pressure gauge that can measure the viscosity, and the correspondence between the viscosity change and the component change when plasma is generated is examined. At this time, the component change before and after the generation of the plasma is separately investigated by mass spectrometry or the like, so that the magnitude of the component change can be obtained from the change due to the viscosity measurement when the plasma is subsequently generated.

  The viscosity is obtained by removing the influence of the absolute pressure measured by an absolute pressure gauge such as a diaphragm vacuum gauge from the value measured by the quartz vibrator sensor, the quartz vibrator pressure gauge, and the spinning rotor gauge.

  When it is obvious that the gas in the plasma apparatus is one or two kinds, a viscosity curve with respect to the partial pressure of each gas and mixed gas is prepared separately, and this is used as a calibration curve. The partial pressure can be determined.

  In the case of one kind of gas, this calibration curve shows the absolute pressure and physical properties (viscosity value) of the vacuum device after it is introduced into the vacuum device that is closed during or under vacuuming, while changing the absolute pressure of the gas. ) Is simultaneously measured using a quartz crystal sensor having a size of 1 cm or less, a quartz friction vacuum gauge, or a spinning rotor gauge, and the correlation between the absolute pressure and the physical property value (viscosity) is obtained.

  In addition, if the quartz vibrator sensor is covered with a cover made of an insulator that does not conduct charged particles from the plasma, disturbance to the plasma can be prevented during the measurement.

  In the case of two types of gas, the vacuum device is closed after vacuuming, and the partial pressure of each gas is introduced into the vacuum device while measuring with an absolute pressure gauge, and the physical property value (viscosity) is similarly determined. Obtain a calibration curve for a two-component gas by measuring with a quartz oscillator sensor, quartz friction vacuum gauge, or spinning rotor gauge, and determining the dependence on the partial pressure ratio obtained from the ratio of the pressure values of the absolute pressure gauge. Can do.

  Since the quartz crystal sensor is small and can be moved in the apparatus, the measurement is performed by moving with respect to the fixed plasma electrode in the apparatus, and by measuring the spatial distribution of the viscosity, the gas phase is measured. The spatial distribution of components can be determined.

  When calculating the spatial distribution, the effect of temperature becomes significant in the measurement near the plasma electrode. However, in order to correct this effect, another temperature measurement is performed, or the correlation with the temperature obtained from the quartz crystal sensor is high. By correcting the temperature by measuring the resonance frequency, the physical property value output is calibrated to determine the component change.

  Since the correlation between the output of the quartz crystal sensor and the temperature is constant, the quartz crystal sensor output value is calculated using the previously calculated quartz crystal sensor output-the slope of the temperature line, that is, the temperature coefficient of the quartz crystal sensor output. By calibrating, the effect of temperature change can be eliminated.

  The flow rate (flux) of the gas phase component into the product is obtained from the spatial distribution. Further, since the gas component usually changes due to the generation of plasma, by measuring this change, the plasma operation status can be grasped, and the disappearance of unintended plasma can be easily detected.

  By obtaining the correlation between the gas component during plasma generation and the physical property of the product, the physical property of the product can be estimated in advance from the measured gas component in the plasma. In plasma operation, unstable operation and unintended situations due to the effects of degassing from the inner wall and members of the device, and eventually plasma may stop, but by observing changes in gas components over time, Various conditions can be readjusted for long-term stable plasma process operation.

  The plasma conditions include each supply gas flow rate, total pressure in the apparatus, high frequency power and frequency, product temperature / electric field, plasma electrode temperature / electric field, apparatus temperature, gas phase temperature in the apparatus, and the like. By using a gas phase component measuring apparatus capable of rapid measurement, a simple, small and inexpensive film thickness / film forming speed / film structure automatic control apparatus can be provided.

  A preferred embodiment of the plasma component change measuring method and apparatus according to the present invention will be described below with reference to FIG.

  The plasma apparatus includes a plasma apparatus 3, a plasma electrode 5 projecting in the plasma apparatus 3 that supplies a high-frequency voltage from a high-frequency power supply 10, and a plurality of gas flow controllers (mass flow controllers: MFC) that introduce a plurality of gases. 7, a quartz crystal sensor 1 having a size of 1 cm or less, a diaphragm pressure gauge 2, a work support 15 that is a product, and a pressure control valve 9.

  In the present invention, pressure correction means 4 and temperature correction means 6, gas component determination means 13, and control means 11 that receive measurement data from the plasma apparatus are provided. Specifically, the pressure correction unit 4, the temperature correction unit 6, the gas component determination unit 13, and the control unit 11 use a computer 17 having an input unit, an output unit, a CPU, a storage device, and the like (not shown).

  The quartz vibrator sensor 1 and the diaphragm pressure gauge 2 are connected to the input unit of the computer 17 via a data line. The gas component determination unit 13 uses the data obtained by the pressure correction unit 4 directly or, if necessary, further uses the data obtained by processing the data by the temperature correction unit 6 and is stored in advance in a storage device. The gas component is determined based on the correspondence information between the “gas viscosity” and the “gas component”.

  The pressure correction unit 4 inputs measurement data from the quartz crystal sensor 1 and the diaphragm pressure gauge 2 and corrects the influence of the absolute pressure from the output of the quartz crystal sensor 1. The pressure corrected value (pressure correction value) is output to the temperature correction means 6 when the temperature change during measurement is large, and to the gas component determination means 13 otherwise. ing.

  The temperature correction means 6 inputs the pressure correction value and the crystal resonator resonance frequency information having a large correlation with the temperature generated from the crystal resonator sensor 1 or the atmospheric temperature obtained by actual measurement, and further performs temperature correction on the pressure correction value. The temperature correction value obtained by performing is output to the gas component determination means 13. The obtained gas component data is configured to be output to the control means 11 in real time.

  The control unit 11 receives the gas component data from the gas component determination unit 13 and appropriately controls the MFC of the plurality of gas introduction pipes to control the type, component, flow rate, pressure, and the like of the supply gas.

  Further, the control means 11 receives the temperature data from the temperature correction means 6 and controls the power supplied from the high-frequency power supply 10 and its potential, and can control the electrode temperature of the plasma electrode 5.

The method of the present invention carried out using the apparatus of the present invention having the above configuration will be described.
(1) The viscosity of the gas in the plasma apparatus 3 is measured by the quartz vibrator sensor 1 and the diaphragm pressure gauge 2.

  Here, the viscosity measurement in the present invention will be described. The upper diagram in FIG. 2 is a graph showing the absolute pressure dependence of the crystal sensor output in each gas, and the lower left diagram is a graph showing the absolute pressure dependence of the display pressure of the quartz crystal manometer, The lower right diagram in FIG. 2 is a graph showing the absolute pressure dependence of the indicated pressure of the spinning rotor gauge.

  As shown in FIG. 2, the fact that the output of the quartz oscillator sensor 1 (which is not a quartz oscillator sensor but may be a quartz friction vacuum gauge or a spinning rotor gauge) at the same absolute pressure varies depending on the type of gas. By doing so, it is possible to measure the component change in the plasma.

  Note that, even at pressures other than those shown above, the respective outputs differ at the same absolute pressure depending on the type of gas, so that changes in the components in the plasma can be measured even in a pressure range other than those indicated.

  Quartz friction pressure gauge is a built-in quartz oscillator sensor that is oscillated by electricity, and includes the sensor by utilizing the fact that the resistance generated when gas molecules collide with it is dependent on the pressure and viscosity of the gas. It is a pressure gauge that measures by taking it out as a voltage of an electric circuit.

  Spinning rotor gauge is a pressure gauge that stops the power after rotating a steel ball etc. at high speed in the gas, and utilizes the fact that the speed of decrease of the rotational speed after this power stop is also dependent on the pressure and viscosity of the gas. .

  Since the component measurement in the present invention utilizes the fact that the output of the quartz oscillator sensor (or quartz friction vacuum gauge or spinning rotor gauge) differs at the same absolute pressure depending on the type of gas, Measurement with both the child sensor 1 and the diaphragm pressure gauge 2 is necessary.

  When there is no substantial change in absolute pressure, such as under atmospheric pressure, viscosity measurement can be performed by measuring only the quartz vibrator sensor 1.

  In the measurement of gas viscosity, since the value is small, for example, in the measurement with a fluid, the viscosity is generally obtained using a pressure difference. In the present invention, the information on the viscosity can be obtained by taking out the resistance to the crystal resonator sensor 1 as the crystal resonator sensor output.

  Specifically, the absolute pressure dependence of the crystal oscillator sensor output as shown in FIG. 2 is examined, a pressure coefficient that is a change rate with respect to the pressure of the same output is obtained, and the output of the same output due to the absolute pressure change is obtained using this pressure coefficient. Change can be corrected.

If the above-mentioned measuring instrument output, measurement pressure, and pressure coefficient are V, P, and C, respectively, the pressure correction value V _p is V _p = VC × (PP ₀ ) with respect to the absolute pressure P ₀ at any one point. Is required. This pressure-corrected value V _p is an amount that correlates with the viscosity of the gas, and the change in the gas component can be measured using this value.

  Furthermore, the viscosity of the gas can be obtained by comparing it with the pressure data of the viscosity that is separately obtained. However, in order to observe the change in the component, it can be performed simply by using the output of the quartz oscillator sensor.

  FIG. 3 shows an example in which the viscosity of the gas in the plasma device 3 obtained in this way is input to the gas component determination means 13 and measured in advance for a monosilane-hydrogen binary gas. The configuration of the gas component is obtained based on the relationship graph between the crystal oscillator sensor output and the component dependency (calibration curve) as shown.

  That is, the gas component determination unit 13 stores correspondence information between “viscosity” and “gas component” in advance, and the gas corresponding to the viscosity input to the gas component determination unit 13 based on the correspondence information. The component is determined and output to the control means 11 as gas component data.

  FIG. 4 is a graph showing a change in the pressure calibration value (vertical axis) of the crystal resonator sensor 1 with respect to time (horizontal axis). As shown in FIG. 4, when plasma is generated, the pressure calibration value of the crystal resonator sensor 1 changes. This change is observed in the plasma apparatus as shown in the results of mass spectrometry in FIG. 4. This is consistent with the change in gas component, and it can be seen that the change in gas component due to plasma can be measured.

(2) Further, by moving the crystal unit 1 parallel to the plasma electrode 5 (in the left-right direction in FIG. 1), the plasma electrode in the apparatus as shown in FIG. 5, particularly in the space above the product. 5 and the space distribution in the apparatus radial direction parallel to the surface of the plasma electrode 5 and from the end of the plasma electrode 5 to the inner wall of the apparatus.

  At this time, in order to correct the influence of the temperature, the ambient temperature at the measurement place of the crystal resonator sensor 1 is simultaneously measured by the thermometer 18 or a resonance frequency having a large correlation with the temperature obtained from the crystal resonator sensor 1 is obtained. From the information, the temperature coefficient of the crystal resonator sensor output as shown in FIG. 6 is obtained, and temperature correction is performed. FIG. 6 is a graph showing the measured ambient temperature dependence of the crystal resonator output under a constant pressure condition.

Assuming the measured output, measured temperature, if the pressure coefficient V respectively, T, and K, the temperature correction value V _t with respect to the absolute temperature T ₀ at any one _{point, V t = VC × (TT} 0 ).

(3) Based on the gas component determination means 13 obtained by the above procedure, the control means 11 outputs the output for controlling the plasma conditions to the gas flow rate control device 7, the pressure control valve 9, and the high frequency power source, respectively. 10. By giving to the workpiece support base 15, the product 12 can be made uniform and uniform.

Here, the output for controlling various conditions of the plasma is as follows.
(A) Type of supply gas to be adjusted by the gas flow rate control device 7 (mixing ratio of plural types of gases) and control output for controlling the flow rate (b) Control output for controlling the pressure control valve 9 of the plasma device ( C) Control output for supplying supply potential and supply power of the high-frequency power source 10 supplied to the plasma electrode 5 (d) Heater 8 for adjusting the temperature of the product (work) support 15 and the plasma electrode 5 Control output to control

(4) By comparing the components before and after plasma generation, plasma stoppage can be confirmed from the result of viscosity measurement obtained from gas components during plasma generation, and abnormal operation can be detected early.

  As shown in FIG. 7, if the change in the gas component is constantly measured during the plasma operation by this measurement method, even if the gas component initially assumed changes due to some reason, the change is offset by this measurement method. When a significant difference appears in the gas component change by detection, the gas component ratio can be maintained at a desired value by applying feedback to the flow rate of the supply gas.

  In particular, in the silane-hydrogen binary system used in the manufacturing process of thin film silicon, the gas component ratio affects important physical properties such as the film structure (amorphous or microcrystalline) to be manufactured and light stability. As shown in FIG. 8, if the correlation between the physical properties and the results of the measurement of the viscosity of the gas component is obtained in advance, the measurement can be performed by measuring the gas component by the present method and monitoring the gas component during the actual process. The characteristics of the object can also be kept constant.

  Similarly, the correlation between various physical properties such as film thickness, electrical characteristics and etching ratio of the obtained product and viscosity measurement is obtained, and various conditions of the process are controlled by using these correlations in an actual process.

  The best mode for carrying out the plasma component change measuring method and apparatus according to the present invention has been described based on the embodiments. However, the present invention is not limited to such embodiments, and It goes without saying that there are various embodiments within the scope of the technical matter described.

  Since the plasma component change measuring method and apparatus according to the present invention has the above-described configuration, it can be applied to various manufacturing apparatuses that perform processing and work using the plasma apparatus.

It is a figure explaining the structure of the Example of this invention. It is a graph which shows the relationship between a crystal oscillator sensor output (upper figure), the display pressure (lower left figure) of a quartz oscillator pressure gauge, the indication pressure (lower right figure) of a spinning rotor gauge, and an absolute pressure. It is a relationship graph between the quartz vibrator sensor output measured in the monosilane-hydrogen mixed gas and the component dependence (calibration curve). It is a graph which shows the change of the pressure calibration value of the crystal oscillator sensor at the time of generating hydrogen plasma. It is a figure which shows the spatial distribution of the gaseous-phase component around the measurable plasma. It is a graph for calculating | requiring the temperature coefficient of a crystal oscillator sensor output. It is a figure showing about the mechanism for maintaining the gas component in plasma constant using this measurement. It is a graph which shows the correlation of a physical property and gas component ratio.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Crystal oscillator sensor 2 Diaphragm pressure gauge 3 Plasma apparatus 4 Pressure correction means 5 Plasma electrode 6 Temperature correction means 7 Gas flow control apparatus (mass flow controller: MFC)
DESCRIPTION OF SYMBOLS 8 Heater 9 Pressure control valve 10 High frequency power supply 11 Control means 12 Product 13 Gas component determination means 15 Work support stand 17 Computer 18 Thermometer

Claims (12)

A component change measurement method for measuring a gas property value before and after plasma generation and detecting a change in the gas component before and after plasma generation from the correlation between the gas property value and the gas component in the plasma device,
The physical property value is viscous,
A component change measuring method before and after plasma generation, wherein a quartz resonator sensor, a quartz friction vacuum gauge, or a spinning rotor gauge is used as a measuring device for measuring the physical property value. A component change measurement method for measuring a gas property value before and after plasma generation and detecting a change in the gas component before and after plasma generation from the correlation between the gas property value and the gas component in the plasma device,
The physical property value is viscous,
As a measuring device for measuring the physical property value, using a quartz friction vacuum gauge or a spinning rotor gauge,
A component change measurement method before and after plasma generation, wherein a value obtained by eliminating the influence of absolute pressure measured by an absolute pressure gauge from the result of measuring the physical property value is used.   The component change before and after plasma generation according to claim 1 or 2, wherein a spatial distribution of the gas component is obtained by moving the measuring device to obtain a spatial distribution of the physical property values in the plasma device. Measurement method.   When measuring the spatial distribution, especially when approaching the plasma, perform simultaneous temperature measurement, or correct the temperature by utilizing the fact that the oscillation frequency of the quartz crystal sensor is correlated with the ambient temperature, and plasma In addition to eliminating the effects of temperature changes that occur when measuring the inside, covering the tip of the measurement device with an insulator prevents the introduction of charged particles into the measurement device and enables measurement without affecting the plasma. The component change measuring method before and after plasma generation according to claim 3.   It is characterized by controlling the plasma conditions by controlling the plasma conditions by obtaining the flux of the plasma component relative to the product from the spatial distribution of the gas component obtained by changing the distance to the electrode where the plasma is generated. To measure component change before and after plasma generation.   6. The component change measuring method before and after plasma generation according to claim 1, wherein the gas components are monosilane and hydrogen. A component change measuring device that measures a gas property value before and after plasma generation and detects a change in gas component before and after plasma generation from the correlation between the gas property value and the gas component in the plasma device,
The physical property value is viscous,
A component change measuring apparatus before and after plasma generation, wherein a quartz vibrator sensor, a quartz friction vacuum gauge, or a spinning rotor gauge is used as a measuring apparatus for measuring the physical property values. A component change measuring device that measures a gas property value before and after plasma generation and detects a change in gas component before and after plasma generation from the correlation between the gas property value and the gas component in the plasma device,
The physical property value is viscous,
As a measuring device for measuring the physical property value, using a quartz friction vacuum gauge or a spinning rotor gauge,
A component change measuring apparatus before and after plasma generation, wherein a value obtained by eliminating the influence of absolute pressure measured by an absolute pressure gauge from the result of measuring the physical property value is used.   The component change measuring apparatus before and after plasma generation according to claim 1 or 2, wherein a spatial distribution of a gas component is obtained from the physical property values in the plasma apparatus by moving the measuring apparatus.   When measuring the spatial distribution, especially when approaching the plasma, perform simultaneous temperature measurement, or correct the temperature by utilizing the fact that the oscillation frequency of the quartz crystal sensor is correlated with the ambient temperature, and plasma In addition to eliminating the effects of temperature changes that occur when measuring the inside, covering the tip of the measurement device with an insulator prevents the introduction of charged particles into the measurement device and enables measurement without affecting the plasma. The component change measuring apparatus before and after plasma generation according to claim 3.   It is characterized by controlling the plasma conditions by controlling the plasma conditions by obtaining the flux of the plasma component with respect to the product from the spatial distribution of the plasma component obtained by changing the distance to the electrode where the plasma is generated. Component change measurement device before and after plasma generation.   The component change measuring apparatus before and after plasma generation according to claim 1, wherein the gas components are monosilane and hydrogen.

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