JP2006241516A - Production method for thin film by gaseous mixture and apparatus for the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To supply gas of an appropriate mixing ratio into thin film deposition process chambers of all of thin film production apparatus regardless of differences in gas supply systems, and to obviate the occurrence of pressure dependence in another measurement method, management of consumables, wavelength selectivity, explosiveness, a problem of a need for a large amount of samples, a problem that measurement in real time is not possible, etc. <P>SOLUTION: The gaseous mixture to perform a composition change by which a composition is uniquely defined from viscosity is used and the pressure value of the gaseous mixture is inputted from both measured values of a pressure measuring instrument sensitive to not only to pressure but to a physical properties value and a pressure measuring instrument which is not influenced by the physical properties value and the physical properties value is determined. Based on the database of the physical properties value corresponding to the composition previously acquired from the determined physical properties value, the composition is determined, and the flow rates of a plurality of the gas supply apparatus for supplying the thin film deposition process chambers to deposit thin films on a substrate are respectively independently controlled by the composition. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a thin film deposition apparatus using a mixed gas, in which it is important to control the ratio of the component pressures of the gas in the process apparatus, and in particular, obtained by measuring the flow rate of each mixed gas supplied into the process chamber in which the thin film is deposited. Even if the flow rate ratio is different from the actual gas component partial pressure ratio in the process chamber, the gas mixture partial pressure ratio in the process chamber can be accurately measured and a desired thin film can be produced. The present invention relates to a thin film manufacturing method and an apparatus for performing the method.

  The present invention belongs to the technical field as described above, and can be applied to an apparatus for forming a thin film using various mixed gases. However, it is widely used in this technical field for convenience of explanation. Among the two-component gas systems, a hydrogen-silane mixed gas system will be described. In the conventional process of producing amorphous silicon using a hydrogen-silane mixed gas, for example, as shown in FIG. 5, the flow rate for silane is adjusted in the silane supply pipe 52 from the silane gas supply source 51 to the thin film deposition process chamber 57. The hydrogen flow controller 56 is provided in the hydrogen supply pipe 55 from the hydrogen gas supply source 54 to the thin film deposition process chamber 57, and each flow controller accurately measures the flow rate flowing through each gas supply path. The gas is adjusted to a predetermined flow rate, and the gas in the thin film deposition process chamber 57 is exhausted by the exhaust pump 58. A substrate 59 is disposed in the thin film deposition process chamber 57, and a thin film is formed on this surface.

As described above, by controlling the flow rate regulator of each gas supply path, a gas having a predetermined mixing ratio is present in the thin film deposition process chamber 57 and a predetermined film is formed on the substrate. The search for conditions suitable for film formation is also performed by changing the flow rate ratio. A thin film manufacturing apparatus using a mixed gas is described in, for example, the following patent documents.
JP 07-335576 A

  Using the conventional thin film production apparatus as described above, the optimum film formation conditions can be found by trial and error by adjusting the flow rate, but even if an appropriate film formation condition is found, the gas flow rate ratio is Often it was device specific and could not be applied to other devices. The film forming conditions are determined by the component pressure ratio (partial pressure ratio) in the thin film deposition process chamber, not the gas flow ratio, and the difference between the gas flow ratio and the partial pressure ratio is the thin film production equipment. Depends on the system that constitutes. This is explained below.

  In general, the configuration of a thin film production apparatus has a flow rate regulator on the upstream side of the gas pipe as described above, and a thin film deposition process chamber is installed on the downstream side of the flow rate regulator. In this method, a thin film is deposited by reaction, and the inside of the thin film deposition process chamber is often in a reduced pressure state. In this apparatus, in order to control the partial pressure ratio in the thin film deposition process chamber, the flow rate controller controls the flow ratio. However, the condition search method for depositing a thin film on a substrate includes the flow ratio and the thin film This is a method of determining by taking the correlation of the film quality. However, this method has a problem that it is not possible to monitor the partial pressure ratio that affects the formation of the thin film.

  As a film forming method using a mixed gas of hydrogen-silane, a method using a flow rate controller as shown in FIG. 5 is often used, but the problem here is the viscosity of hydrogen. The viscosity of hydrogen is much smaller than other gases. Therefore, it flows more easily in the piping than silane gas. Therefore, the difference in pressure (differential pressure) between the inlet and outlet of the pipe is smaller in hydrogen gas than in silane, as shown in the graph of FIG. Therefore, even if hydrogen and silane are flowed at the same flow rate, the partial pressure in the thin film deposition process chamber is much smaller. Thus, there has been a problem that the flow rate ratio set in the gas supply path is different from the partial pressure ratio in the thin film fabrication process chamber.

  The length and thickness of the pipe in the above equipment, the ease of gas flow in the valve, and the pipe configuration such as the bending of the pipe are naturally different for different equipment, so the optimal mixed gas flow ratio found in a certain equipment is Even if it is used, another apparatus has a problem that the partial pressure ratio in the thin film deposition process chamber is different.

  In order to measure the gas component in the thin film deposition process chamber in the conventional apparatus, there is a method of measuring the component ratio for each mass by connecting a mass analyzer 60 as shown in FIG. 7, for example. However, since there is usually a pressure difference between the inside of the mass analyzer 60 and the thin film deposition process chamber 57 and there is a difference in ease of flow for each gas component, the partial pressure ratio in the mass analyzer 60 and the thin film deposition process are also present. Since the partial pressure ratios in the chamber 57 are different, there is a problem in that the accurate concentration of each gas in the thin film deposition process chamber 57 cannot be measured, and the mixed gas component ratio cannot be measured.

  For example, in the light absorption method, the degree of absorption of light of a specific wavelength is measured and converted into a concentration. However, when the pressure decreases, there is a pressure dependency such as an apparent concentration decreasing, and an accurate concentration cannot be obtained only by absorbance. Further, in the concentration measurement method using the light absorption method, a light source is required, but this lamp has a finite lifetime, requires periodic replacement, and requires maintenance and cost. Furthermore, the method of measuring the concentration using the light absorbance requires a light source that generates a necessary light wavelength because the absorption wavelength differs depending on the type of gas, which causes a problem of wavelength selectivity.

  In addition, in the measurement method using the principle of measuring the decomposition rate of the mixed gas by applying heat or light, there is a risk of explosion or ignition when measuring the concentration of the explosive / flammable mixed gas. For example, if the ozone concentration exceeds 50% with an atmospheric pressure ozone-oxygen mixture, there is a risk of explosion when ignited. Therefore, it is dangerous to measure high-concentration ozone gas in ultraviolet absorption method with ozone decomposition by light irradiation. was there. Furthermore, when adopting a technique involving decomposition in concentration measurement, it is necessary to sample a large amount of the gas mixture to be measured. For example, in the case of an ozone-oxygen mixed gas, ozone in the sampled mixed gas is decomposed by irradiation with ultraviolet rays to become oxygen, so that the ozone concentration in the mixed gas decreases. Therefore, high-precision concentration measurement required a large amount of sampling of the mixed gas so that changes in the mixed gas concentration due to ozonolysis can be ignored. In addition, the method of performing chemical analysis in another place after extracting a part of the mixed gas cannot cope with the case where the gas concentration changes every moment.

  Therefore, the present invention makes it possible to supply a gas having an appropriate mixing ratio into the thin film deposition process chamber in all thin film production apparatuses regardless of the difference in the gas supply system, and to depend on pressure in various measurement methods. It is intended to provide a thin film production apparatus using a mixed gas and its control method that does not cause consumables management, wavelength selectivity, explosiveness, problems that require a large amount of sampling, problems that cannot be measured in real time, etc. To do.

  In order to solve the above-described conventional problems, the present invention is based on values from a densitometer attached to a thin film deposition apparatus, instead of a method of setting a gas flow rate ratio using only the conventional flow controller. A method of controlling the partial pressure ratio in the thin film deposition process chamber is adopted. Here, the concentration measurement measures the physical properties of the gas mixture, such as viscosity, thermal conductivity, density, molecular weight, and their functions, and determines the concentration of the gas based on the physical properties specific to the pure gas of the gas to be mixed. This is done by calculating. For this reason, in this invention, since there is no flow of a lot of gas by sampling, the difference of a measured value and a true density | concentration caused by the ease of the flow of the gas for every component can be suppressed. Further, in the present invention, even a mixed gas in which an explosion occurs due to stimulation by heat or light is a technique that does not irradiate heat or light, and therefore can be included in the measured mixed gas.

  In the present invention, the method for obtaining the concentration is to measure the target mixed gas simultaneously using the measuring element A sensitive to pressure and physical properties (for example, viscosity) and the measuring element B sensitive only to pressure, and the influence of the pressure by arithmetic processing. By calculating the physical property value (for example, viscosity) of the mixed gas, the concentration of the mixed gas corresponding to the physical property value is obtained. The measurement pressure range can be further expanded by adding a measurement element C corresponding to the measurement element A and the measurement element B other than the target pressure range of the measurement element A.

  Concentration calibration is performed by preparing standard gases of various concentrations by mixing the component gases constituting the mixed gas at a known ratio in advance, and obtaining a calibration curve by actually measuring the standard gas with the concentration measuring device. This can be done by recording in a density calculator.

  Examples of measuring elements used in the present invention include those sensitive only to pressure (eg, liquid column differential gauge, compression vacuum gauge, diaphragm vacuum gauge, Bourdon tube vacuum gauge), and moving solids that change depending on pressure. Measures any physical quantity such as change in friction force received from gas, change in thermal conductivity from solid to gas, and heat generated by decomposition when gas reacts near the solid surface (eg, viscosity) (Friction) (crystal friction vacuum gauge, spinning rotor gauge), heat conduction [thermocouple vacuum gauge, Pirani vacuum gauge], Knudsen vacuum gauge) and those using ionization (eg heat) Cathode ionization vacuum gauge, cold cathode ionization vacuum gauge, radiation ionization vacuum gauge) can be used. These probes can be used properly depending on the gas properties such as flammability and explosiveness, the concentration and pressure of the target mixed gas.

  The concentration of the mixed gas in the thin film deposition process chamber may vary over time due to changes in film formation conditions (changes in substrate temperature and plasma generation conditions) even if the component flow rates of the mixed gas are constant. In the present invention, since the gas concentration can be measured in real time, it is possible to cope with the partial pressure ratio fluctuation factor other than the fluctuation factor of the component flow rate.

  More specifically, the thin film manufacturing method according to the present invention uses a gas mixture that undergoes a composition change in which the composition is uniquely defined from the viscosity, and a pressure measuring device that is sensitive not only to pressure but also to physical properties and the physical properties described above. Input the pressure value of the gas mixture from both measured values of the pressure measuring device not affected by the value, obtain the physical property value, based on the physical property value database corresponding to the composition obtained in advance from the obtained physical property value A flow rate of a plurality of gas supply devices that determine a composition and supply a thin film deposition process chamber for depositing a thin film on a substrate is independently controlled by the composition.

  Another thin film production method according to the present invention is characterized in that, in the thin film production method, the thin film production is performed while the gas in the thin film deposition process chamber is discharged by a pump for exhausting a mixed gas.

  Further, another thin film manufacturing method according to the present invention is characterized in that in the thin film manufacturing method, the thin film is manufactured without exhausting the gas in the thin film deposition process chamber.

  In another thin film manufacturing method according to the present invention, in the thin film manufacturing method, the mixed gas is a mixed gas of any one of a hydrogen-silane mixed gas, a hydrogen-methanol mixed gas, and a CVD mixed gas including MOCVD. It is characterized by that.

  According to another thin film manufacturing method of the present invention, in the thin film manufacturing method, the concentration sensor is a pressure measuring device sensitive to a physical property value, a pressure measuring device not affected by the physical property value, and a both pressure measuring device. The physical property value is obtained by inputting the pressure value from the physical property value, and the concentration is obtained based on the physical property value data corresponding to the concentration previously obtained from the physical property value.

  According to another thin film manufacturing method of the present invention, in the thin film manufacturing method, as the pressure measuring device sensitive to the physical property value, a plurality of pressure measuring devices having different response characteristics with respect to the characteristic values are used to simultaneously measure the mixed gas to be measured. , And the physical property value of the mixed gas is obtained from each pressure measurement value and the measurement value of the pressure measurement device that is not affected by the physical property value.

  Further, in another thin film manufacturing method according to the present invention, in the thin film manufacturing method, the physical property value is viscous, and a quartz friction vacuum gauge or a spinning rotor gauge is used as a pressure measuring device sensitive to the physical property value. A diaphragm vacuum gauge is used as an unaffected pressure measuring device.

  According to another thin film manufacturing method of the present invention, in the thin film manufacturing method, in the thin film deposition process chamber, the concentration in the thin film deposition process chamber can be estimated, or the concentration of the thin film deposition process chamber has a correlation with the concentration. The concentration is measured by a concentration sensor attached to the head.

  Further, another thin film manufacturing method according to the present invention includes a thin film deposition process chamber in addition to an actual concentration obtained by the concentration calculation unit as a parameter for setting a flow rate of each mixed gas in the thin film manufacturing method. In the case where plasma is used in the deposition temperature or in the deposition container, the flow rate is controlled by using the plasma generation conditions together.

  In addition, another thin film manufacturing apparatus according to the present invention includes a thin film deposition process chamber for depositing a thin film on a substrate and a flow rate controller controlled by a flow rate control device, and includes different components from a gas supply source to the thin film process chamber. A gas supply system including a plurality of gas supply systems independently supplying each gas, a concentration sensor for measuring a composition of a component gas in the thin film deposition process chamber, an output of the concentration sensor, A concentration calculation unit that calculates an actual concentration of the component gas, and the flow rate control device controls the flow rate controller based on a concentration value from the concentration calculation unit.

  Another thin film production apparatus according to the present invention is characterized in that, in the thin film production apparatus, the thin film deposition process chamber includes a pump for exhausting mixed gas.

  In addition, another thin film manufacturing apparatus according to the present invention is characterized in that the thin film deposition process chamber does not include a pump for exhausting mixed gas in the thin film manufacturing apparatus.

  Another thin film production apparatus according to the present invention is the thin film production apparatus, wherein the mixed gas is any one of a hydrogen-silane mixed gas, a hydrogen-methanol mixed gas, and a CVD mixed gas including MOCVD. It is characterized by being.

    Another thin film production apparatus according to the present invention is the thin film production apparatus, wherein the concentration sensor is a pressure measurement device sensitive to a physical property value, a pressure measurement device not affected by the physical property value, and a both pressure measurement device. The physical property value is obtained by inputting the pressure value from the physical property value, and the concentration is obtained based on the physical property value data corresponding to the concentration previously obtained from the physical property value.

  Another thin film production apparatus according to the present invention is the thin film production apparatus, wherein the pressure of the mixed gas to be measured is simultaneously measured using a plurality of pressure measurement apparatuses having different characteristics as pressure measurement apparatuses sensitive to the physical property values. Then, the physical property value of the mixed gas is obtained from each pressure measurement value and the measurement value of the pressure measurement device which is not affected by the physical property value.

  According to another thin film manufacturing apparatus of the present invention, in the thin film manufacturing apparatus, the physical property value is viscous, and a quartz friction vacuum gauge or a spinning rotor gauge is used as a pressure measuring device sensitive to the physical property value. A diaphragm vacuum gauge is used as an unaffected pressure measuring device.

  In addition, in another thin film manufacturing apparatus according to the present invention, in the thin film manufacturing apparatus, the concentration sensor may be compared with the thin film deposition process chamber where the concentration in the thin film deposition process chamber can be estimated, or in the thin film deposition process chamber. It is characterized by being attached at a location where there is a correlation of concentration.

  In addition, in another thin film manufacturing apparatus according to the present invention, in the thin film manufacturing apparatus, the flow rate control calculation unit has an actual concentration obtained by the concentration calculation unit as a parameter for setting a flow rate of each mixed gas. In addition, the present invention is characterized in that the substrate temperature in the thin film deposition process chamber or the plasma generation conditions when plasma is used in the deposition container are used.

  The ease of the flow of each component gas may change from device to device due to changes in the piping configuration between the flow controller and film formation vessel, such as the length and diameter of the valve, piping, and the bending position of the piping. In the present invention, the partial pressure ratio can be controlled to be the same in the thin film deposition process chamber without being affected by the difference in piping configuration.

  In addition, the concentration of the mixed gas in the film formation container may fluctuate over time due to changes in film formation conditions such as changes in substrate temperature and plasma generation conditions, even if the component flow rates of the mixed gas are constant. However, in the present invention, since the gas concentration can be measured in real time, it is possible to cope with the partial pressure ratio fluctuation factor other than the fluctuation factor of the component flow rate.

  Furthermore, since the concentration measurement method according to the present invention does not cause a large amount of gas flow due to sampling, it is possible to suppress the difference between the measured value and the true concentration caused by the ease of gas flow for each component.

  In particular, the present invention uses a gas mixture that undergoes a composition change in which the composition is uniquely defined from the viscosity in order to control the partial pressure ratio in the thin film deposition process chamber without being affected by the difference in piping configuration. The pressure value of the mixed gas is input from both the pressure measurement device that is sensitive not only to the physical property value but also the pressure measurement device that is not affected by the physical property value to obtain the physical property value. A composition is obtained based on a database of physical property values corresponding to the obtained composition, and the flow rates of a plurality of gas supply devices that supply a thin film deposition process chamber for depositing a thin film on a substrate are independently controlled by the composition. A thin film production method using a mixed gas, and a thin film deposition process chamber for depositing a thin film on a substrate, and a flow rate controller controlled by a flow rate control device, are provided from a gas supply source. A gas supply device provided with a plurality of gas supply systems independently supplying gas of different components to the thin film process chamber, a concentration sensor for measuring the composition of the component gas in the thin film deposition process chamber, A gas concentration control unit that calculates an actual concentration of the component gas in the thin film deposition process chamber according to an output, and the flow rate control device controls a flow rate controller based on a concentration value from the concentration calculation unit This is a thin film manufacturing apparatus.

  FIG. 1 shows a schematic configuration of a thin film manufacturing method to which an embodiment of the present invention is applied and a thin film manufacturing apparatus for performing the method, and a gas A supply pipe 2 from a gas A gas supply source 1 to a thin film deposition process chamber 7. A gas A flow rate controller A3 is provided, and a gas B flow rate controller 6 is provided in the gas B supply pipe 5 from the gas B gas supply source 4 to the thin film deposition process chamber 7. The flow rate can be adjusted while measuring the flow rate of the gas flowing through the supply path. In the illustrated example, the gas in the thin film deposition process chamber 7 is exhausted by the exhaust pump 8. However, the exhaust pump 8 is not necessarily required, and thin film deposition can be performed in a state where a predetermined mixed gas is supplied into the thin film deposition process chamber. The substrate 9 is disposed in the thin film deposition process chamber 7, and a thin film is formed on the surface of the substrate 9, similar to the conventional one.

  In the present invention, the concentration of a plurality of gases supplied to the thin film deposition process chamber 7 is measured and the partial pressure ratio is obtained to control the flow rate of each gas. In the embodiment shown in FIG. As means for measuring the gas concentration, when measuring the pressure of the thin film deposition process chamber 7 using a concentration sensor, two pressure gauges of a diaphragm pressure gauge 10 and a quartz vibration type pressure gauge 11 are provided side by side. The pressure is measured, the concentration calculation unit 12 obtains the concentration of the mixed gas in the thin film deposition process chamber 7 from the output data of both pressure gauges, and the concentration signal is output to the flow rate control device 13. In the flow rate control device 13, a predetermined flow rate is measured while measuring the flow rates in the flow rate regulator A of the gas A and the flow rate regulator B of the gas B so that the mixed concentration corresponds to the partial pressure ratio of the mixed gas in the thin film deposition process chamber 7. To control the flow rate.

  The diaphragm pressure gauge 10 has a characteristic that gives an absolute value of gas pressure regardless of the type of gas. Any other pressure gauge that gives an absolute value can be used in place of this diaphragm pressure gauge. Further, the quartz vibration type pressure gauge 11 displays an apparently different pressure depending on the difference between the molecular weight of the gas and the viscosity coefficient. This is because the frictional force with the gas received by the crystal unit in contact with the gas is proportional to the 1/2 power of the product of the molecular weight of the gas and the viscosity coefficient of the gas in the region where the pressure is a viscous flow.

  The graph of FIG. 2 is a plot of pressure indication values of a quartz oscillator type pressure gauge and a diaphragm type pressure gauge used as a concentration sensor of the apparatus using the hydrogen-silane mixed gas of FIG. The parameter is the concentration of silane gas. In this case, since the viscosity of hydrogen is used as the viscosity of the measurement gas in the quartz oscillator type pressure gauge, a correct value is shown when hydrogen is 100%. Since the viscosity increases as the concentration of silane gas increases, the indicated value of the quartz oscillator type pressure gauge increases. By using the characteristic curve of FIG. 2, the concentration of the silane gas can be obtained from the pressure and the crystal oscillator pressure gauge instruction value. By controlling the flow rate ratio of the mixed gas based on this concentration, the inside of the film forming container can be set to a predetermined concentration (partial pressure ratio).

  The present invention can be used for various mixed gases, but can be suitably used particularly for hydrogen-silane mixed gas, hydrogen-methanol mixed gas, CVD mixed gas including MOCVD, and the like. When installing the concentration sensor consisting of a plurality of pressure gauges, etc. to the thin film deposition process chamber, attach it to a location where the concentration in the thin film deposition process chamber can be inferred, or where there is a correlation between the concentration of the thin film deposition process chamber Is preferred. In addition to the actual concentration obtained by the concentration calculation unit, the flow rate control calculation unit can set the flow rate of each mixed gas in addition to the substrate temperature in the thin film deposition process chamber or the deposition container. When plasma is used, it is preferable to use the plasma generation conditions together.

  Concentration measurement when the mixed gas has three components will be described. FIG. 3 shows an embodiment of an apparatus for measuring the concentration at the supply port of a gas generator that uses a ternary mixed gas as a raw material. Here, it is assumed that the composition ratio of the three components is not independent, and if the component A is determined, the remaining components B and C are also dependently determined. Furthermore, when it is known that the viscosity of the mixed gas monotonously changes depending on the component concentration of the component A as shown in FIG. 4, the concentration of the component A can be determined by measuring the viscosity, and the other components B and C are also unique. It is possible to determine the composition of the mixed gas.

INDUSTRIAL APPLICABILITY The present invention relates to a thin film deposition apparatus using a mixed gas and belongs to a field in which the ratio of gas component pressures in a process apparatus is important for control, and can be effectively applied particularly when the flow rate ratio and the gas component partial pressure ratio are different.

It is explanatory drawing of the thin film preparation method using the flow rate control system by the density | concentration measurement by this invention. It is a characteristic view of the quartz crystal vibration type pressure gauge which uses the concentration and pressure of the silane-hydrogen mixed gas as parameters. It is a schematic diagram of the density | concentration measuring system of 3 component mixed gas. FIG. 6 is a relationship diagram of the concentration and viscosity of a mixed gas. It is explanatory drawing of the thin film deposition apparatus of the mixing ratio control system by the conventional flow controller. It is a conceptual diagram which shows generation | occurrence | production of the difference of a flow rate ratio and a partial pressure ratio. It is a conceptual diagram of the partial pressure measurement by a conventional mass analyzer and differential pressure generation.

Explanation of symbols

1 Gas A gas supply source 2 Gas A supply piping 3 Flow rate regulator A
4 Gas B gas supply source 5 Gas B supply piping 6 Flow controller B
7 Thin Film Deposition Process Chamber 8 Exhaust Pump 9 Substrate 10 Diaphragm Pressure Gauge 11 Quartz Vibrating Pressure Gauge 12 Concentration Calculation Unit 13 Flow Control Device

Claims (18)

Using a gas mixture that undergoes a composition change whose composition is uniquely defined from the viscosity,
Input the pressure value of the mixed gas from both the pressure measurement device sensitive not only to the pressure but also the physical property value and the pressure measurement device not affected by the physical property value to obtain the physical property value,
Obtain a composition based on a database of physical property values corresponding to the composition obtained in advance from the obtained physical property values,
A method for producing a thin film using a mixed gas, wherein the flow rates of a plurality of gas supply devices that supply a thin film deposition process chamber for depositing a thin film on a substrate are each independently controlled by the composition.   2. The method for producing a thin film using a mixed gas according to claim 1, wherein the thin film is produced while the gas in the thin film deposition process chamber is discharged by a pump for exhausting the mixed gas.   2. The method for producing a thin film using a mixed gas according to claim 1, wherein the thin film is produced in a state where the gas in the thin film deposition process chamber is not discharged.   2. The method for producing a thin film using a mixed gas according to claim 1, wherein the mixed gas is a mixed gas of a hydrogen-silane mixed gas, a hydrogen-methanol mixed gas, or a CVD mixed gas including MOCVD.   The concentration sensor is a pressure measuring device sensitive to a physical property value, a pressure measuring device that is not affected by the physical property value, and inputs a pressure value from both pressure measuring devices to obtain a physical property value, and from the physical property value 2. The method for producing a thin film using a mixed gas according to claim 1, wherein the concentration is obtained based on physical property data corresponding to the concentration acquired in advance.   As the pressure measuring device sensitive to the physical property value, the pressure of the gas mixture to be measured is simultaneously measured using a plurality of pressure measuring devices having different response characteristics with respect to the characteristic value, and each pressure measurement value and the physical property value are affected. 6. The method for producing a thin film using a mixed gas according to claim 5, wherein the physical property value of the mixed gas is obtained from the measured value of the pressure measuring device not present.   The physical property value is viscous, a quartz friction vacuum gauge or a spinning rotor gauge is used as a pressure measuring device sensitive to the physical property value, and a diaphragm vacuum gauge is used as a pressure measuring device not affected by the physical property value. A method for producing a thin film using a mixed gas according to claim 1.   The concentration is measured by a concentration sensor attached at a location where the concentration in the thin film deposition process chamber can be estimated in the thin film deposition process chamber, or a location where there is a correlation between the concentration and the concentration of the thin film deposition process chamber. A method for producing a thin film using the mixed gas according to 1.   As parameters for setting the flow rate of each mixed gas, in addition to the actual concentration obtained by the concentration calculator, the substrate temperature in the thin film deposition process chamber, or plasma if plasma is used in the deposition vessel 2. The method for producing a thin film using a mixed gas according to claim 1, wherein the flow rate is controlled using the generation conditions together. A thin film deposition process chamber for depositing a thin film on a substrate;
A gas supply device including a flow rate controller controlled by a flow rate control device, and a plurality of gas supply systems each independently supplying gas of different components from a gas supply source to the thin film process chamber;
A concentration sensor for measuring the composition of component gases in the thin film deposition process chamber;
A concentration calculation unit that calculates an actual concentration of the component gas in the thin film deposition process chamber by an output of the concentration sensor;
The flow rate control device controls a flow rate controller based on a concentration value from the concentration calculation unit, and is a thin film production device using a mixed gas.   The thin film deposition apparatus according to claim 10, wherein the thin film deposition process chamber includes a pump for exhausting the mixed gas.   The thin film deposition apparatus according to claim 10, wherein the thin film deposition process chamber is not provided with a pump for exhausting the mixed gas.   11. The thin film production apparatus using a mixed gas according to claim 10, wherein the mixed gas is any one of a hydrogen-silane mixed gas, a hydrogen-methanol mixed gas, and a CVD mixed gas including MOCVD.   The concentration sensor is a pressure measuring device sensitive to a physical property value, a pressure measuring device that is not affected by the physical property value, and inputs a pressure value from both pressure measuring devices to obtain a physical property value, and from the physical property value 11. The apparatus for producing a thin film using a mixed gas according to claim 10, wherein the concentration is obtained based on physical property data corresponding to the concentration acquired in advance.   As the pressure measurement device sensitive to the physical property value, the pressure of the mixed gas to be measured is simultaneously measured using a plurality of pressure measurement devices having different characteristics, and the pressure measurement device is not affected by each pressure measurement value and the physical property value. 15. The apparatus for producing a thin film using a mixed gas according to claim 14, wherein the physical property value of the mixed gas is obtained from the measured value.   The physical property value is viscous, a quartz friction vacuum gauge or a spinning rotor gauge is used as a pressure measuring device sensitive to the physical property value, and a diaphragm vacuum gauge is used as a pressure measuring device not affected by the physical property value. An apparatus for producing a thin film using a mixed gas according to claim 10.   The concentration sensor is attached to the thin film deposition process chamber at a location where the concentration in the thin film deposition process chamber can be inferred, or a location where there is a correlation between the concentration and the concentration of the thin film deposition process chamber. 10. A thin film production apparatus using a mixed gas according to 10.   In addition to the actual concentration obtained by the concentration calculation unit, the flow rate control calculation unit sets the flow rate of each mixed gas, as well as the substrate temperature in the thin film deposition process chamber or plasma in the deposition container. 11. The apparatus for producing a thin film by using a mixed gas according to claim 10, wherein the apparatus is used in combination with plasma generation conditions.