JP2009049001A - Organic light-emitting device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic light-emitting device in which a crack or the like generated at removing of a passivation layer on an external connection terminal is prevented from developing with the elapse of time and moisture resistance of a light-emitting area is not impaired. <P>SOLUTION: The organic light-emitting device is provide at least with a substrate, an organic flattened layer for flattening unevenness of the substrate, an organic light-emitting device including a lower electrode, an organic compound layer, and an upper electrode, and a passivation layer for covering those. In the organic flattened layer, a recessed or protruded discontinuous portion for dividing a region including a light-emitting area and a region including an external connection terminal is formed, and the discontinuous portion is covered with the passivation layer. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an organic light emitting device used for a flat panel display or the like and a method for manufacturing the same.

  In recent years, organic light-emitting devices, which are self-luminous devices, have attracted attention as flat panel displays. The organic light-emitting element constituting the organic light-emitting device is liable to deteriorate characteristics due to moisture and oxygen, and a slight amount of moisture causes the organic compound layer and the electrode layer to peel off, causing dark spots. Therefore, cover the organic light-emitting element with an etching glass cover, attach the periphery with a sealant, attach a moisture absorbent inside, and absorb moisture entering the seal surface with the moisture absorbent, ensuring the life of the organic light-emitting element is doing.

  However, in order to realize a space-saving flat panel display using a thin organic light emitting device, it is necessary to eliminate the space of the hygroscopic agent around the light emitting area and to make it thinner, and a large amount of hygroscopic agent is required. There is a need for an organic light emitting device sealing method that does not. Therefore, solid sealing with a highly functional passivation layer for preventing intrusion of moisture and oxygen into the organic compound layer is required.

  By the way, in general, when forming a passivation layer, a plate-shaped area mask made of metal or the like is used so that the passivation layer is not formed on the external connection terminal that is electrically connected to the electric circuit outside the organic light emitting element. Use to cover the external connection terminals and the like. However, there is a problem that a gap is formed between the substrate and the area mask due to bending of the substrate or area mask on which the organic light emitting element is formed, and a passivation layer is also formed on the external connection terminal. Therefore, a method that does not use an area mask is required and proposed.

  Patent Document 1 describes a method in which a masking tape is attached to an area including an external connection terminal, a passivation layer is formed, and then the masking tape and the passivation layer are peeled off together. In addition, a method is described in which an organic compound layer is formed in a region including an external connection terminal, a passivation layer is formed, and then photoetching is performed using ultraviolet rays, and the passivation layer is peeled off together with the organic compound layer.

  Patent Document 2 describes a method in which a laser removal layer is formed in a region including an external connection terminal, a passivation layer is formed thereon, and then a laser is irradiated to remove both the laser removal layer and the passivation layer. Yes.

JP 2002-151254 A JP 2004-165068 A

  However, when a method of peeling and removing the passivation layer by masking tape, photoetching, laser irradiation, blasting, or the like is used, small cracks or peeling or the like occurs in the cross section of the passivation layer. These are problematic in that they progress due to long-term environmental changes, reach the light emitting area, and lose the moisture-proof ability of the passivation layer.

  In particular, a material such as silicon nitride, silicon oxynitride, or silicon oxide is often used for the passivation layer, and the film thickness reaches 1 μm to several μm. When such a passivation layer is peeled and removed, the occurrence rate of cracks increases.

  An organic light emitting device comprising a substrate having a thin film transistor (TFT) has an organic flattening layer on the TFT, but the passivation layer formed on the organic flattening layer has a new crack due to changes in temperature and humidity. Will occur. Also, existing cracks progress quickly. That is, the organic planarization layer contracts or expands due to a temperature change of the organic light emitting element. The organic planarization layer and the passivation layer containing an inorganic material are subjected to stress when the organic planarization layer contracts or expands due to a difference in expansion coefficient. For this reason, if the passivation layer formed on the organic planarization layer has a small crack or the like, the passivation layer cannot withstand thermal stress, and the crack progresses with time.

  An object of the present invention is to provide an organic light-emitting device that suppresses the progress of cracks and the like that occur when removing a passivation layer on an external connection terminal over time and does not impair the moisture resistance of a light-emitting area, and a method for manufacturing the same. It is to be.

As means for solving the above problems, the present invention provides:
In an organic light emitting device comprising at least a substrate, an organic flattening layer for flattening the unevenness of the substrate, an organic light emitting element having a lower electrode, an organic compound layer, and an upper electrode, and a passivation layer covering them ,
The organic planarization layer is formed with a concave or convex discontinuity that partitions a region including a light emitting area and a region including an external connection terminal, and the discontinuous portion is covered with a passivation layer. It is characterized by that.

  According to the present invention, the progress of cracking and peeling of the passivation layer that occurs when the passivation layer on the external connection terminal is removed is blocked at the discontinuous portion, thereby preventing moisture and oxygen from entering the light emitting area of the organic light emitting device. it can.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to these embodiments.

<Embodiment 1>
Embodiment 1 of this invention is demonstrated based on drawing. FIG. 1 is a schematic plan view showing Embodiment 1 of the present invention. FIG. 2 is a schematic cross-sectional view showing a cross section taken along line AB in FIG.

  First, a method for manufacturing an organic light emitting device will be described, and then the organic light emitting device will be described.

  This method of manufacturing an organic light emitting device is an organic light emitting device comprising at least a substrate 1, an organic planarizing layer 4 for flattening the unevenness of the substrate 1, an organic light emitting element, and a passivation layer 9 covering them. It is suitably implemented as a manufacturing method.

  When manufacturing the organic light emitting device of this embodiment, first, the thin film transistor 2 for driving each organic light emitting element is formed on the substrate 1. The substrate 1 may be transparent or opaque, and may be an insulating substrate made of a synthetic resin or the like, or a conductive substrate or a semiconductor substrate having an insulating layer such as silicon oxide or silicon nitride formed on the surface.

  After the thin film transistor 2 is formed, an insulating layer 3 made of an inorganic material is formed so as to cover the thin film transistor 2, and an organic planarization layer 4 is formed to absorb the unevenness of the thin film transistor 2. As a constituent material of the insulating layer 3, silicon nitride, silicon oxynitride, silicon oxide, or the like can be used. As a constituent material of the organic planarizing layer 4, acrylic resin, polyimide resin, norbornene resin, fluorine resin, or the like can be used.

  After each of the insulating layer 3 and the organic planarizing layer 4 is formed, the discontinuous portion 14 is formed. Specifically, the organic planarization layer 4 has a concave discontinuous portion 14 that divides a region including the light emitting area 100 and a region including the external connection terminal 10 into a crack prevention structure for the passivation layer 9 to be formed later. Are formed in a straight line parallel to the light emitting area 100.

  Here, “partition” means that there is no portion where the passivation layer formed on the external connection terminal 10 and the passivation layer formed on the light emitting area 100 are connected without crossing the discontinuous portion 14. Means that. Since the organic electroluminescent panel described in Patent Document 2 has a portion where the planarization insulating layer is not formed between the display portion and the terminal, there is a possibility that progress of cracks, peeling, etc. in this portion can be reduced. is there. However, unlike the organic light-emitting device of the present invention, since the discontinuous portion is not formed so as to partition the display portion and the terminal, the protective film formed on the terminal and the display portion are formed. It has a portion connected to the protective film. Therefore, it is considered that progress such as cracking and peeling occurs.

  The discontinuous portion 14 has a convex structure or a concave structure. Further, the discontinuous portion 14 can be formed by a known etching method. As a specific forming method, a wet etching method or a dry etching method is used. For example, the organic flattening layer 4 can be removed by applying a resist on the organic flattening layer 4 by a spin coating method, performing photolithography, and then dipping in a solution. Further, the underlying insulating layer of the organic planarization layer 4 can be removed by using a dry etching method such as a plasma etching method, a sputter etching method, or an ion beam etching method.

  It is preferable that the discontinuous portion 14 removes the film thickness of the organic planarizing layer 4 to expose the insulating layer 3 made of an inorganic material from the bottom. Thereby, adhesiveness with the passivation layer 9 can be improved.

  The side wall portion of the discontinuous portion 14 is preferably inclined so as to shrink downward, and the angle (inclination angle) is preferably 30 degrees or more. This is because the film density of the passivation layer 9 at the lower portion of the side wall portion of the discontinuous portion 14, that is, at the corner portion of the discontinuous portion 14 can be reduced, and the continuity of the passivation layer 9 can be interrupted. If the angle of the side wall of the discontinuous portion 14 is steep, the area around the light emitting area 100, that is, the frame area can be narrowed.

  It is preferable that the width dimension of the bottom part of the discontinuous part 14 is 0.1 mm or more and 0.5 mm or less. When the width dimension is larger than 0.5 mm, the area around the light emitting area 100, that is, the frame area becomes wide. Further, when the width dimension is smaller than 0.1 mm, cracks are easily transmitted, and the luminance of the organic light emitting element is lowered as will be described later.

  After the discontinuous portion 14 is formed, the lower electrode 6 is formed at each pixel position in the light emitting area 100. On the other hand, external connection terminals 10 are formed outside the light emitting area 100. The lower electrode 6 and the signal wiring 11 of the thin film transistor are electrically connected through contact holes formed in the insulating layer 3 and the organic planarization layer 4. Further, the external connection terminal 10 and the signal wiring 11 of the thin film transistor are directly electrically connected by removing the insulating layer 3 and the organic planarization layer 4.

  As a constituent material of the lower electrode 6 and the external connection terminal 10, for example, chromium can be used, but a silver film, a silver film containing an additive, an aluminum film, an aluminum film containing an additive, or an aluminum alloy film may be used.

  After the lower electrode 6 and the external connection terminal 10 are formed, the pixel isolation film 5 is formed so as to cover the peripheral edge of the lower electrode 6. As a constituent material of the pixel isolation film 5, an inorganic insulating layer made of silicon nitride, silicon oxynitride, silicon oxide or the like, an acrylic resin, a polyimide resin, a novolac resin, or the like can be used.

  After the pixel separation film 5 is formed, an organic compound layer 7 is formed on the lower electrode 6. The organic compound layer 7 includes, for example, three layers of a hole transport layer, a light emitting layer, and an electron transport layer, but only the light emitting layer may be used. Or you may be comprised from several layers, such as 2 layers and 4 layers.

  After the organic compound layer 7 is formed, the upper electrode 8 is formed on the organic compound layer 7. The constituent material of the upper electrode 8 may be an oxide transparent conductive film such as IZO (indium zinc oxide) or ITO (indium tin oxide), or a metal translucent film such as silver, aluminum, or gold.

  After forming the upper electrode 8, the region including the light emitting area 100 having the organic light emitting element on the substrate 1 and the region including the external connection terminal 10 are covered with the passivation layer 9. That is, the passivation layer 9 is formed over substantially the entire area of the substrate 1 without covering the area including the external connection terminals 10 with the area mask.

  The constituent material of the passivation layer 9 may be a dense material. For example, silicon nitride, silicon oxide, silicon nitride oxide, or the like can be used.

  After the passivation layer 9 is formed, the passivation layer 9 in the region including the external connection terminals 10 is peeled and removed. Here, in the passivation layer 9 formed in the discontinuous portion 14, since the film density at the lower end (corner portion) of the side wall portion is lowered, the continuity of the passivation layer 9 itself is interrupted. For this reason, cracks and the like that occur when removing the passivation layer 9 on the external connection terminal 10 are blocked by the discontinuous portion 14 and do not reach the light emitting area 100. Therefore, the moisture resistance of the light emitting area 100 is not impaired.

  The method for peeling the passivation layer 9 is not particularly limited, and a method of previously covering the region including the external connection terminals 10 with a masking tape and peeling the masking tape together can be used. Further, a method of photoetching with ultraviolet light, or a method of forming a laser removal layer in a region including the external connection terminal 10 in advance and removing the entire laser removal layer with a laser can also be used. In the present embodiment, the discontinuous portion 14 is formed in a straight line shape, and the region including the external connection terminal 10 is rectangular, so that the passivation layer 9 can be easily peeled off.

  After peeling off and removing the passivation layer 9, the circularly polarizing plate 13 is attached to the region including the light emitting area 100, specifically, the passivation layer 9 with the adhesive 12 interposed therebetween. The circularly polarizing plate 13 has a configuration in which a polarizing plate and a ¼λ plate (retardation plate) are combined in the same manner as a usual circularly polarizing plate.

  Through the above steps, the organic planarization layer 4 is formed with a concave portion forming a discontinuous portion 14 that divides a region including the light emitting area 100 and a region including the external connection terminal 10 in a straight line, and the discontinuity is formed. An organic light emitting device having a configuration in which the portion 14 is covered with the passivation layer 9 is obtained. In the organic light emitting device of this embodiment, cracks and the like generated when the passivation layer 9 on the external connection terminal 10 is peeled off are blocked by the discontinuous portion 14 even if the crack progresses with time. For this reason, the moisture resistance of the light emitting area 100 can be maintained.

<Embodiment 2>
Embodiment 2 of this invention is demonstrated based on drawing. FIG. 3 is a schematic cross-sectional view showing Embodiment 2 of the present invention.

  In the first embodiment, the passivation layer 9 is formed directly on the discontinuous portion 14, but in this embodiment, as shown in FIG. 3, the inorganic layer 16 is formed on the discontinuous portion 14 and the inorganic layer 16 is formed. A passivation layer 9 is formed thereon.

  Specifically, for example, when the upper electrode 8 is formed, the inorganic layer 16 is formed by depositing a metal oxide conductor made of ITO, IZO or the like in the discontinuous portion 14 with the same composition as the upper electrode 8. Is formed. By doing so, the contact area between the side wall portion of the discontinuous portion 14 and the vicinity thereof and the passivation layer 9 can be gained, and the passivation layer 9 can be more closely attached. In addition, since the adhesion between the metal oxide conductor, which is a metal compound, and the passivation layer 9 is high and the thermal expansion coefficient is much closer than that of the organic material, cracks in the passivation layer 9 can be blocked.

  Moreover, in this embodiment, the inorganic layer 16 on the discontinuous part 14 is formed independently. That is, the inorganic layer 16 is not formed over the light emitting area 100. For this reason, it is possible to more reliably prevent moisture from entering the light emitting area 100.

<Embodiment 3>
Embodiment 3 of the present invention will be described with reference to the drawings. FIG. 4 is a schematic plan view showing Embodiment 3 of the present invention.

  In the first and second embodiments, the discontinuous portion 14 is linearly formed so as to partition the region including the light emitting area 100 and the region including the external connection terminal 10. However, as illustrated in FIG. The discontinuous portion 14 may be formed so as to surround a region including the terminal 10. In this case, the region including the external connection terminals 10 can be minimized, and dust generated when the passivation layer 9 is peeled can be reduced. In the present embodiment, the spread of cracks can also be reduced. For this reason, the performance which seals an organic light emitting element can further be improved.

<Embodiment 4>
Embodiment 4 of this invention is demonstrated based on drawing. FIG. 5 is a schematic plan view showing Embodiment 4 of the present invention. FIG. 6 is a schematic cross-sectional view showing a cross section taken along line AB in FIG.

  In the first to third embodiments, only the discontinuous portion 14 is formed as a means for partitioning the region including the external connection terminal 10 and the region including the light emitting area 100. However, as shown in FIGS. The discontinuous portion 15 may be formed separately.

  Specifically, the organic planarization layer 4, the pixel separation film 5, and the insulating layer 3 are removed so as to surround the light emitting area 100 closer to the light emitting area 100 than the discontinuous portion 14, thereby discontinuing moisture. Part 15 is formed. Then, a material having the same composition as that of the lower electrode 6 is formed on the discontinuous portion 15 while being insulated from the lower electrode 6, and the upper electrode 8 is further formed thereon. The upper electrode 8 may be connected to a circuit (not shown) on the substrate through a through hole (not shown) formed in the discontinuous portion 15. Then, a passivation layer 9 is formed on the upper electrode 8.

  In the above configuration, there is no layer made of an organic material in the discontinuous portion 15, and the inorganic layer 16 and the upper electrode 8 are in close contact with each other. For this reason, the intrusion of moisture contained in the organic planarization layer 4 outside the light emitting area 100 can be blocked by the discontinuous portion 15. Therefore, the moisture resistance of the light emitting area 100 can be further improved.

<Embodiment 5>
Embodiment 5 of the present invention will be described with reference to the drawings. FIG. 7 is a schematic plan view showing Embodiment 5 of the present invention.

  In the fourth embodiment, the discontinuous portion 14 is formed linearly so as to partition the region including the external connection terminal 10 and the region including the light emitting area 100. However, as illustrated in FIG. The discontinuous portion 14 may be formed so as to surround a region including the.

<Embodiment 6>
Embodiment 6 of the present invention will be described with reference to the drawings. FIG. 8 is a schematic plan view showing Embodiment 6 of the present invention.

  In the said Embodiment 4 and 5, although the discontinuous parts 14 and 15 are provided separately, it is good also as a common structure as shown in FIG.

<Embodiment 7>
Embodiment 7 of this invention is demonstrated based on drawing. FIG. 9 is a schematic sectional view showing Embodiment 7 of the present invention.

  Although the said Embodiment 1-6 has formed the discontinuous part 14 (and discontinuous part 15) in concave shape, as shown in FIG. 9, you may form in convex shape. At this time, the discontinuous portion 14 forms, for example, the upper electrode 8 and has the same composition as the upper electrode 8 at a position set so as to partition the region including the light emitting area 100 and the region including the external connection terminal 10. The material is formed. Alternatively, the pixel isolation film 5 is formed, and is formed of a material having the same composition as the pixel isolation film 5 at a position set so as to partition the region including the light emitting area 100 and the region including the external connection terminal 10. . Alternatively, a material having the same composition as the upper electrode 8 and a material having the same composition as the pixel isolation film 5 may be stacked.

  The height of the discontinuous portion 14 is preferably 0.3 μm or more, and more preferably 1 μm or more. This is because the growth direction of the passivation layer 9 is different between the convex slope and the bottom, and the faulted portion becomes deeper in the film thickness direction when the height of the discontinuous portion 14 is higher, and the continuity of the passivation layer 9 is increased. This is because it is easy to break.

  The side wall portion of the discontinuous portion 14 is preferably inclined so as to expand downward, and the angle is preferably 30 degrees or more. This is because the film density of the passivation layer 9 at the lower portion of the side wall portion of the discontinuous portion 14, that is, at the corner portion of the discontinuous portion 14 can be reduced, and the continuity of the passivation layer 9 can be interrupted. If the angle of the side wall of the discontinuous portion 14 is steep, the area around the light emitting area 100, that is, the frame area can be narrowed.

  It is preferable that the width dimension of the top part of the discontinuous part 14 is 0.1 mm or more and 0.5 mm or less. When the width dimension is larger than 0.5 mm, the area around the light emitting area 100, that is, the frame area becomes wide. On the other hand, when the width dimension is smaller than 0.1 mm, the luminance of the organic light emitting element is lowered as will be described later.

  In the organic light emitting device of FIG. 9, a recess is formed in the organic planarization layer 4, and the discontinuous portion 14 is formed on the inorganic layer formed in the recess, but the recess is formed in the organic planarization layer 4. You may form a convex part directly as the discontinuous part 14, without forming.

<Eighth embodiment>
In addition, although the recessed part of the discontinuous part 14 of the said Embodiments 1-7 is removed until the insulating layer 3 or the signal wiring 11 is exposed to the bottom part, the structure with thin thickness may be sufficient.

  Examples of the present invention will be described below.

<Example 1>
The organic light emitting device shown in FIG. 1 was manufactured by the following method.

  The organic light emitting device shown in FIG. 1 was formed by laminating a TFT 2, an insulating layer 3, and an organic planarizing layer 4 in this order on a glass substrate 1. On the upper part, a lower electrode 6 made of aluminum (Al) / indium tin oxide (ITO) was formed with a film thickness of 150 nm on a pixel basis. The periphery of each pixel was covered with a pixel separation film 5 made of polyimide.

  Between the external connection terminal 10 and the light emitting area 100 in the organic planarization layer 4, a discontinuous portion 14 that is a crack prevention structure of the passivation layer 9 was formed. The discontinuous portion 14 has a concave shape formed by removing the organic planarization layer 4 on the substrate. The width of the bottom portion of the discontinuous portion 14 is 0.5 mm and is made of an inorganic material. The insulating layer 3 is exposed.

  The TFT substrate having the above configuration was washed for about 5 minutes and dehydrated under baking conditions at about 200 ° C. for 2 hours. Thereafter, the lower electrode 6 was subjected to UV / ozone cleaning.

  Next, an organic compound layer 7 composed of a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer was formed on the lower electrode 6. At this time, the organic compound layer 7 was also formed on the external connection terminal 10.

That is, the substrate and the material are attached to a vacuum vapor deposition apparatus, and N, N′-α-dinaphthylbenzidine (α-NPD) is formed on the lower electrode 6 under a condition of 1 × 10 ⁻³ Pa with a film thickness of 40 nm. A hole transport layer was formed by forming a film.

A co-deposited film of coumarin dye (1.0 vol%) and tris [8-hydroxyquinolinate] aluminum (Alq ₃ ), which is known to emit green light, is formed to a thickness of 30 nm. Thus, a light emitting layer was formed.

  Next, as an electron transport layer, a phenanthroline compound represented by the following formula was formed to a thickness of 10 nm.

  Next, a co-evaporated film of cesium carbonate (2.9 vol%) and the phenanthroline compound described above was formed on the electron transport layer so as to have a thickness of 40 nm, thereby forming an electron injection layer.

  Subsequently, the substrate formed up to the electron injection layer is moved to another sputtering apparatus, and indium tin oxide (ITO) is formed on the electron injection layer so as to have a film thickness of 60 nm by a sputtering method. Thus, the upper electrode 8 was formed.

  Next, a passivation layer 9 was formed over substantially the entire area of the substrate 1 by the VHF plasma CVD method so as to cover them.

First, a high-frequency electrode of the deposited film forming apparatus, it to a substrate holder which is composed of a facing substrate holder and a ground electrode, a TFT substrate formed up to the upper electrode 8 is fixed, once the vacuum container, the vacuum degree of 10 ^{- A} vacuum was drawn so as to be on the order of ³ Pa. Thereafter, the reaction space pressure was controlled while SiH ₄ gas, N ₂ gas, and H ₂ gas were respectively flowed into the vacuum vessel. Then, 60 MHz high frequency power was supplied to the high frequency electrode, and a passivation layer 9 having a thickness of about 3 μm was deposited.

  Thereafter, the external connection terminal 10 was irradiated with laser, and the passivation layer 9 on the external connection terminal 10 was peeled off together with the organic compound layer 7.

  Next, a circularly polarizing plate 13 was stuck on the passivation layer 9 with an adhesive 12. Thus, an organic light emitting device was obtained.

  Similarly, ten organic light emitting devices were manufactured.

  About the obtained organic light-emitting device, the passivation layer 9 on the external connection terminal 10 was observed with the optical microscope, and the crack etc. of the passivation layer 9 were observed. The results are shown in Table 1.

  Moreover, about the obtained organic light-emitting device, the acceleration test for 500 hours was performed on 60 degreeC90% RH conditions, and states, such as a crack of the passivation layer 9 after an acceleration test, were observed. The results are shown in Table 2.

  According to Table 1, before the acceleration test, the cut portion of the passivation layer 9 irradiated with the laser, which is outside the light emitting area, has cracks of about several μm, chipping, and small peeling of the passivation layer 9 of four out of ten organic layers. It was confirmed with a light emitting device.

  From Table 2, after the accelerated test at 60 ° C. and 90% RH for 500 hours, cracks progressed in two of the ten organic light-emitting devices, but the cracks stopped at the discontinuous portion 14.

<Example 2>
In Example 2, as shown in FIG. 3, a TFT substrate in which a metal compound layer made of an indium tin oxide film (ITO) was formed on the discontinuous portion 14 was used. Further, the width of the bottom of the discontinuous portion 14 in FIG. 3 was set to 0.5 mm as in the first embodiment. Then, an organic light emitting device was prepared in the same manner as in Example 1, and a passivation layer 9 having a film thickness of about 6 μm was deposited and sealed to seal the organic light emitting device.

  Thereafter, the external connection terminal 10 was irradiated with laser, and the passivation layer 9 on the external connection terminal 10 was peeled off together with the organic compound layer 7.

  Next, a circularly polarizing plate 13 was stuck on the passivation layer 9 with an adhesive 12. Thus, an organic light emitting device was obtained.

  Similarly, ten organic light emitting devices were manufactured.

  The obtained organic light-emitting device was subjected to an acceleration test for 500 hours under the condition of 60 ° C. and 90% RH, and the state of the passivation layer 9 after the acceleration test was observed. The results are shown in Table 3.

  After the acceleration test at 60 ° C. and 90% RH for 500 hours, 6 out of 10 organic light emitting devices had cracks outside the light emitting area 100, but all of the cracks stopped at the discontinuous portion 14 and entered the light emitting area 100. There was no progress.

<Example 3>
In Example 3, as shown in FIGS. 3 and 4, a discontinuous portion 14 is formed so as to surround the external connection terminal 10, and a metal compound layer made of indium tin oxide (ITO) is formed on the discontinuous portion 14. The formed TFT substrate was used. The width of the bottom portion of the discontinuous portion 14 was set to 0.5 mm as in the first and second embodiments. Then, an organic light emitting device was formed in the same manner as in Example 1, and a passivation layer 9 having a thickness of about 3 μm was deposited and sealed to seal the organic light emitting device.

  Thereafter, the external connection terminal 10 was irradiated with laser, and the passivation layer 9 on the external connection terminal 10 was peeled off together with the organic compound layer 7.

  A circularly polarizing plate 13 was stuck on the passivation layer 9 with an adhesive 12. Thus, an organic light emitting device was obtained.

  Similarly, ten organic light emitting devices were manufactured.

  The obtained organic light-emitting device was subjected to an acceleration test for 500 hours under the condition of 60 ° C. and 90% RH, and the state of the passivation layer 9 after the acceleration test was observed. The results are shown in Table 4.

  After an accelerated test at 60 ° C. and 90% RH for 500 hours, 7 out of 10 organic light emitting devices cracked outside the light emitting area 100, but the cracks stopped at the discontinuous portion 14, and the cracks entered the light emitting area 100. There was no progress.

<Example 4>
In Example 4, a substrate having a configuration in which the discontinuous portion 14 was formed as shown in FIG. 1 and the metal compound layer made of ITO was exposed from the bottom of the discontinuous portion 14 was used. Then, an organic light emitting device was formed in the same manner as in Example 1, and a passivation layer 9 having a thickness of about 6 μm was deposited and sealed to seal the organic light emitting device.

  Thereafter, the external connection terminal 10 was irradiated with laser, and the passivation layer 9 on the external connection terminal 10 was peeled off together with the organic compound layer 7. Further, the passivation layer 9 was cracked with a laser. In this way, 10 organic light emitting devices were manufactured in which the width of the bottom of the discontinuous portion 14 was changed stepwise from 0.025 mm to 0.5 mm as shown in <Table 5> described later.

  The obtained organic light emitting device is subjected to an accelerated test for 500 hours under the condition of 60 ° C. and 90% RH, and whether the passivation layer 9 cracks after the accelerated test proceeds to the light emitting area 100 beyond the discontinuous portion 14. Observed. Moreover, the organic light emitting element was displayed, and it was observed whether the luminance was reduced in the vicinity of the external connection terminal 10 of the organic light emitting element. In the evaluation, a drop rate of 5% or less with respect to the initial luminance was evaluated as ◯, and a value exceeding 5% was evaluated as ×. The results are shown in Table 5.

  After an accelerated test at 60 ° C. and 90% RH for 500 hours, cracks were stopped in the all organic light-emitting device having a width of 0.025 mm to 0.5 mm. However, two organic light-emitting devices with a width of 0.025 mm and one with a width of 0.05 mm caused a reduction in luminance exceeding 5%. On the other hand, when the width dimension was 0.1 mm to 0.5 mm, the luminance did not decrease.

  As described above, if the width of the bottom portion of the discontinuous portion 14 is narrow, the luminance is likely to decrease. However, the formation of the discontinuous portion 14 can block the progress of cracks in the light emitting area 100 of the passivation layer 9. Intrusion of moisture and oxygen into the light emitting area 100 can be prevented.

  Further, the metal compound exposed from the bottom of the discontinuous portion 14 is not limited to indium tin oxide (ITO). Inorganic materials such as silicon nitride, silicon oxynitride, silicon oxide, aluminum oxide, indium zinc oxide (IZO), and indium tin zinc oxide (ITZO) are also effective.

<Comparative Example 1>
In Comparative Example 1, an organic light emitting device was formed using a TFT substrate having no discontinuous portions in the same manner as in Example 1 above, and a passivation layer having a thickness of about 6 μm was deposited to seal the organic light emitting device.

  Then, the laser was irradiated on the external connection terminal, and the passivation layer on the external connection terminal was peeled off together with the organic compound layer.

  A circularly polarizing plate was attached on the passivation layer with an adhesive. Thus, an organic light emitting device was obtained.

  Similarly, ten organic light emitting devices were manufactured.

  The passivation layer on the external connection terminal 10 was observed with an optical microscope, and cracks and the like of the passivation layer were observed. Thereafter, an acceleration test for 500 hours was performed at 60 ° C. and 90% RH, and the state of the passivation layer after the acceleration test was observed. The results are shown in Table 6.

  After an accelerated test at 60 ° C. and 90% RH for 500 hours, cracks progressed in 5 out of 10 organic light emitting devices, and reached the light emitting area. When the organic light emitting device in which the crack progressed to the light emitting area was caused to emit light, non-light emitting pixels were generated in the vicinity of the external connection terminal in the light emitting area.

  The organic light-emitting device of the present invention can be preferably used as a display device, and particularly preferably used for a television receiver, a display unit of a mobile phone, and a display unit of an imaging device.

It is a typical top view of an embodiment of an organic light emitting device of the present invention. It is typical sectional drawing showing a part between AB of FIG. It is typical sectional drawing of different embodiment of the organic light-emitting device of this invention. It is a typical plane of different embodiment of the organic light-emitting device of this invention. It is a schematic plan view of different embodiment of the organic light-emitting device of this invention. It is typical sectional drawing showing a part between AB of FIG. It is a schematic plan view of different embodiment of the organic light-emitting device of this invention. It is a schematic plan view of different embodiment of the organic light-emitting device of this invention. It is typical sectional drawing of different embodiment of the organic light-emitting device of this invention.

Explanation of symbols

1 Glass substrate 2 TFT (Thin Film Transistor)
3 Insulating layer 4 Organic planarization layer 5 Pixel separation film 6 Lower electrode 7 Organic compound layer (hole transport layer, light emitting layer, electron transport layer, electron injection layer)
8 Upper electrode 9 Passivation layer 10 External connection terminal 11 Signal wiring 12 Adhesive 13 Circularly polarizing plate 14 Discontinuous portion 15 Discontinuous portion for blocking water 16 Inorganic layer 100 Light emitting area

Claims (4)

In an organic light emitting device comprising at least a substrate, an organic flattening layer for flattening the unevenness of the substrate, an organic light emitting element having a lower electrode, an organic compound layer, and an upper electrode, and a passivation layer covering them ,
The organic planarization layer is formed with a concave or convex discontinuity that partitions a region including a light emitting area and a region including an external connection terminal, and the discontinuous portion is covered with a passivation layer. An organic light emitting device.   The organic light-emitting device according to claim 1, wherein the inorganic layer is exposed from the bottom of the concave portion of the discontinuous portion.   3. The organic light emitting device according to claim 1, wherein a width dimension of a bottom portion of the concave portion of the discontinuous portion or a top portion of the convex portion is 0.1 mm or more and 0.5 mm or less. An organic light emitting device comprising at least a substrate, an organic flattening layer for flattening the unevenness of the substrate, an organic light emitting element having a lower electrode, an organic compound layer, and an upper electrode, and a passivation layer covering them. In the manufacturing method,
A step of forming a recess or a discontinuous portion of a convex portion that divides a region including a light emitting area and a region including an external connection terminal in an organic planarization layer on the substrate;
Covering the region including the light emitting area on the substrate and the region including the external connection terminal with a passivation layer;
Peeling the passivation layer on the external connection terminal;
A method for producing an organic light-emitting device, comprising:

Images