JP2008041341A - Light emitting device, its manufacturing method and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To restrain a voltage drop in a common electrode without interfering with the structure of a light emitting device nor degrading image quality, and to secure the strength of a mask used for manufacturing the device. <P>SOLUTION: A light emitting element 20 includes a light emitting function layer 23 sandwiched between the common electrode 22 and a pixel electrode 22. The common electrode 22 is formed of an optically-transparent material. Electrode bands 42a as auxiliary electrodes 42 are formed on the upper layer of the common electrode 22 to be arranged in a plurality of columns. In each column, the plurality of electrode bands 42a are arranged at intervals 42b, and arranged at positions partially overlapping the light emitting elements 20. The pixel electrode 20 is formed of an optically-transparent member, and a reflective layer 70 is formed on the side opposite to the auxiliary electrode 42 by interposing the light emitting element 20. Light from the light emitting function layer 23 is reciprocated between the auxiliary electrode 42 and the reflective layer 70. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a light-emitting device using a light-emitting element that emits light having a magnitude corresponding to the amount of current, such as an organic light-emitting diode element, a method for manufacturing the same, and an electronic apparatus including the light-emitting device.

  A light emitting device in which a large number of light emitting elements are arranged on a substrate is widely used. Each light emitting element has a light emitting layer sandwiched between a pixel electrode (for example, an anode) and a common electrode (for example, a cathode). The common electrode is provided over the entire region where the light emitting elements are arranged on the substrate (hereinafter referred to as “light emitting region”). However, a voltage drop occurs in the surface of the electrode due to the resistance of the electrode itself, and the potential supplied to the light-emitting element varies depending on the position on the substrate, and the luminance of the light-emitting element may vary depending on the position.

  As this type of light emitting device, a bottom emission type that emits light emitted from a light emitting layer from a substrate and a top emission type that emits light from an emission surface on the opposite side of the substrate are known. In the top emission type, a light transmissive member is used for the common electrode. However, in general, a light-transmitting member has a higher resistivity than a light-blocking member, and thus there is a problem that variation in potential supplied to a light-emitting element becomes particularly significant. Therefore, conventionally, an auxiliary electrode electrically connected to the common electrode is provided to reduce the resistance of the common electrode. For example, in the techniques described in Patent Document 1 and Patent Document 2, auxiliary wirings formed in various patterns such as a band shape, a lattice shape, and a radial shape are proposed. Further, in the technique described in Patent Document 3, auxiliary wiring is formed every other row in the gap between the light emitting elements arranged in a matrix.

In the technique described in Patent Document 4, in a double-sided light emitting device (so-called dual emission type) light emitting device, an island-shaped reflective film or island portion is used as an opening in each region of the pixel electrode corresponding to each light emitting element. A reflective film is provided.
Japanese Patent Laid-Open No. 2001-230086 JP 2002-318556 A JP 2004-139970 A JP 2006-140127 A

  By the way, the auxiliary electrode is often formed by a deposition method (for example, vacuum deposition) using a mask. The mask is formed to have a shape corresponding to the auxiliary electrode with an opening, and to cover other regions. Patent Documents 1 to 3 disclose various auxiliary electrode patterns. However, in practice, it is extremely difficult to dispose the mask as a large number of strips, so it is necessary to form a mask having a long opening. When tension is applied to arrange such a mask with a small amount of bending, the mask itself is deformed, resulting in poor accuracy of the position of the auxiliary electrode. In addition, when a long auxiliary electrode is formed, the auxiliary electrode and another layer are bonded over a long distance, so that the stress of the auxiliary electrode and thermal stress due to temperature change are easily applied to the other layer and are easily damaged. In order to form the auxiliary electrode described in Patent Document 3, it is necessary to arrange a mask corresponding to the light emitting element, so that high mask alignment accuracy is required.

  It is also conceivable to apply the reflective film described in Patent Document 4 to the auxiliary electrode. However, since a light-shielding member is generally used for the auxiliary electrode, simply providing the auxiliary electrode in the region of the light-emitting element blocks light emitted from each element, and the aperture ratio (light-emitting area ratio) decreases. To do. As a result, sufficient luminance cannot be obtained and image quality deteriorates. In view of the above circumstances, the present invention suppresses the voltage drop in the common electrode without impairing the structure of the light emitting device and without deteriorating the image quality, and is used for manufacturing the device. The purpose is to solve the problem of ensuring the strength of the machine.

  In order to solve the above problems, a light-emitting device according to the present invention includes a first electrode (pixel electrode; for example, an anode), a second electrode (common electrode; for example, a cathode), and a light-emitting layer sandwiched between both. A light emitting region in which a plurality of light emitting elements are arranged; an auxiliary electrode formed of a material having a lower resistivity than the second electrode; and electrically connected to the second electrode; and light emitted from the light emitting layer. The second electrode is a light-transmitting member formed continuously over the plurality of light emitting elements, and the auxiliary electrode has a first direction in the light emitting region. The auxiliary electrodes are divided into a plurality of electrode portions in each row and arranged with a gap therebetween, and the plurality of auxiliary electrodes in the second direction which is a direction orthogonal to the first direction. The pitch of the row of the light emitting elements Smaller than the dimension in the second direction, light emitted from the light emitting layer is caused to reciprocate between the reflective layer and the auxiliary electrode. The reflective layer may be the first electrode of the light emitting element or may be different from the first electrode.

  In the present invention, the auxiliary electrodes are arranged in a plurality of rows in the first direction, and in each row, the plurality of electrode portions are arranged with gaps. When these electrode portions are formed, a mask having openings corresponding to the respective electrode portions is used. Since these openings are connected via a portion facing the gap in each row of electrode portions, the electrode portions (ie, mask openings) are formed without providing gaps (ie, mask connection portions). The strength of the mask is high compared to the case where it is done. Therefore, even if tension is applied to the mask during the formation of the auxiliary electrode, the deformation of the mask is suppressed, and as a result, errors in the size and position of the auxiliary electrode are reduced.

  In addition, in the present invention, since the pitch of the auxiliary electrode rows is smaller than the dimension of the light emitting element in the second direction, the auxiliary electrode partially overlaps the light emitting element. When the auxiliary electrode is formed so as not to overlap with the light emitting element, it is necessary to arrange a mask corresponding to the light emitting element (disposed so that the opening of the mask does not overlap with the light emitting element). The mask position need not be adjusted. That is, since it may overlap with the light emitting element, a slight shift of the mask is allowed. Therefore, high mask alignment accuracy is not required, and manufacturing is simplified. In addition, since the auxiliary electrode and the light-emitting element overlap with each other, variation in potential of the common electrode in a region where the common electrode is in contact with the light-emitting element is reduced, and uneven brightness in one light-emitting element is reduced.

  However, when the auxiliary electrode is formed at a position overlapping with the light emitting element, the light emitted from the light emitting layer is blocked, so that the aperture ratio of the light emitting device is lowered. As a result, the luminance decreases and the image quality deteriorates. However, in the present invention, since the emission light from the light emitting layer has a reflection layer that reflects the light toward the second electrode, the emission light is reciprocated between the auxiliary electrode and the reflection layer. It is strengthened between the electrode and the reflective layer (resonates to increase the purity of light). As described above, the auxiliary electrode is not simply used for reducing the resistance of the second electrode but also used for the resonance of light, thereby realizing an image quality with clear color contrast.

  Further, in the present invention, since the distance at which the auxiliary electrode and the common electrode are joined is short, film stress and thermal stress applied to the joined layers are released compared to the case where a long auxiliary electrode is used. Cheap. Therefore, occurrence of a situation where the light emitting device is damaged due to film stress or thermal stress can be reduced, and the lifetime of the light emitting device with respect to temperature change is improved.

  In addition, when the light emitting device is viewed from the exit surface side by human eyes, the reflected light from the auxiliary electrode may become stray light and hinder image recognition. In the present invention, each row of auxiliary electrodes is divided into a plurality of electrode portions and arranged with a gap, so that the reflected light is compared with the case where a continuous long electrode band is formed without division. Is difficult to recognize and stray light is reduced.

  In a preferred aspect of the present invention, a pitch in each row of the electrode portions is smaller than a dimension in the first direction of each light emitting element. In this aspect, since the pitch of the electrode portion is smaller than the dimension of the light emitting element not only in the second direction but also in the first direction (that is, there are many gaps), the pitch of the electrode part is second than the dimension of the light emitting element. Compared with a short configuration only in the direction, the aperture ratio of the light emitting device is increased. In addition, when the gap is large, the mask connection portion as the portion facing the gap increases, so that the strength of the mask increases.

  In a preferred aspect of the present invention, the plurality of electrode portions include electrode portions formed so as to straddle two adjacent (at least two) light emitting elements in the same row. In the common electrode, the portion where current flows is a region where the light emitting element is located. If each electrode portion is not formed in a region where the light emitting element is located, the common electrode becomes a current path. However, since the resistance value of the common electrode is higher than the resistance value of each electrode portion, a voltage drop occurs and luminance unevenness occurs. However, according to the present embodiment, each electrode portion is formed so as to straddle two adjacent light emitting elements, so that a voltage drop between these light emitting elements can be suppressed, and as a result, luminance unevenness is reduced. It can be greatly improved.

  In another preferred aspect of the present invention, each of the electrode portions is a strip-shaped electrode strip extending in the first direction, and in the second direction, the electrode portion belongs to a gap in one row and belongs to a row adjacent to the row. Since the electrode bands longer than the gap are arranged, the gaps in two adjacent rows are not arranged in the second direction. According to this aspect, since the portion where the reflected light is not visually recognized (that is, the portion corresponding to the gap) is not continuously arranged, the boundary between the portion where the reflected light is visually recognized and the portion where the reflected light is not visually recognized becomes ambiguous. Therefore, the distribution of reflected light becomes ambiguous and stray light is reduced.

  In another preferred aspect of the present invention, each of the electrode portions is a strip-shaped electrode strip extending in the first direction, and the plurality of light emitting elements have a plurality of peak wavelengths depending on a peak wavelength of light transmitted through the second electrode. A plurality of columns that are classified into types and extend in the first direction are arranged, and in one column of the light emitting elements, a plurality of light emitting elements of one type are arranged, and each of the light emitting elements The interval in the second direction of the electrode bands in the row is set according to the peak wavelength of light transmitted through the second electrode where these electrode bands overlap. Here, the “plural types of light emitting elements” are light emitting elements corresponding to, for example, RGB three primary colors, and “classified by the peak wavelength transmitting through the second electrode” means light emitted from the light emitting layer. The wavelength (peak wavelength) where the intensity of the light itself is maximum is any of R, G, and B, or the emitted light is reciprocated between the reflective layer and the auxiliary electrode (that is, due to resonance) ), And the peak wavelength is any of R, G, and B.

  In this aspect, the electrode strips are arranged in a fence shape so that one row overlaps a plurality of light emitting elements of the same type, and according to the type of light emitting element that each row overlaps, the distance between the electrode strips that is the gap between the fences is It is different. In other words, since the gap between the fences is set to a distance suitable for the type of light emitting element with which the electrode bands overlap, only light in a specific wavelength band among the light transmitted through the second electrode passes through the electrode band fence. . Therefore, in some cases, the purity of the output color is improved.

  In another preferred aspect of the present invention, each of the electrode portions is substantially circular. That is, since the polka-dot auxiliary electrode is formed in the light emitting region, the distance at which the auxiliary electrode and the second electrode are joined to each other is shorter than in the case where the band-shaped electrode band is formed. Therefore, the stress and thermal stress of the auxiliary electrode applied to the bonded layers can be easily released, and the occurrence of a situation where the light emitting device is damaged due to film stress or thermal stress can be reduced. In addition, when forming the auxiliary electrode of this aspect, a mask having a substantially circular opening may be prepared, so that a portion where stress is concentrated in the mask is small. Therefore, even if tension is applied to the mask, it is difficult to break, and the strength of the mask can be improved. In addition, compared to an opening having a shape (for example, a belt shape) that is significantly different in length in two directions orthogonal to each other, the force applied to the mask is uniform when tension is applied to the mask, and the mask itself is deformed. The degree of is small. Therefore, errors in the position and size of the auxiliary electrode are reduced.

  The light emitting device according to the present invention is used in various electronic devices. A typical example of this electronic device is a device that uses a light emitting device as a display device. Examples of this type of electronic device include a personal computer and a mobile phone. However, the use of the light emitting device according to the present invention is not limited to image display. For example, an exposure device (exposure head) for forming a latent image on an image carrier such as a photosensitive drum by irradiation of light, a device (backlight) that is arranged on the back side of the liquid crystal device and illuminates it, or The light emitting device of the present invention can be applied to various uses such as various illumination devices such as a device that illuminates a document by being mounted on an image reading device such as a scanner.

  The present invention is also specified as a method of manufacturing the light emitting device according to each of the above aspects. The manufacturing method includes a first step of preparing a mask having an opening in a region where each electrode portion of the auxiliary electrode is formed in the light emitting region, and the mask is made to face the surface of the second electrode. A second step, and a third step of forming the auxiliary electrode by depositing a conductive material with the mask facing the second electrode.

  As described above, the mask used in the above method has high mask strength, so that it suppresses errors in auxiliary power and mask damage caused by deformation of the mask and bending due to its own weight when tension is applied to the mask. Is possible. In addition, since it is not necessary to arrange the mask in correspondence with the light emitting element, high accuracy is not required for alignment when the mask is opposed to the deposition surface. Therefore, the auxiliary electrode can be accurately formed by a simpler method.

<A: First Embodiment>
<Configuration of light emitting device>
FIG. 1 is a circuit diagram showing an electrical configuration of a light emitting device D according to the present invention. The light emitting device D includes a light emitting region A in which a plurality of pixel circuits U are arranged. In the light emitting region A, a plurality of scanning lines 12 extending in the X direction and a plurality of data lines 14 extending in the Y direction orthogonal to the X direction are formed. Each pixel circuit U is disposed at a position corresponding to each intersection of the scanning line 12 and the data line 14. Accordingly, the plurality of pixel circuits U are arranged in a matrix over the X direction and the Y direction.

  One pixel circuit U includes a drive transistor Tdr and a light emitting element 20 disposed on a path from the power line 16 (power voltage VEL) to the ground line 18 (ground voltage Gnd). The light emitting element 20 includes a light emitting functional layer 23 including a light emitting layer of an organic EL (Electro Luminescence) material between a pixel electrode (first electrode; anode) 21 and a common electrode (second electrode; cathode) 22 facing each other. This is an organic light-emitting diode element intervening. The light emitting element 20 emits light with luminance corresponding to a current (hereinafter referred to as “driving current”) Iel flowing through the light emitting functional layer 23. The pixel electrodes 21 are formed separately from each other for each light emitting element 20. The common electrode 22 is continuously formed over the plurality of light emitting elements 20 and is electrically connected to the ground line 18.

  The drive transistor Tdr is a p-channel transistor that controls the amount of drive current Iel according to the gate voltage. The drain of the driving transistor Tdr is connected to the pixel electrode 21 of the light emitting element 20. The source of the drive transistor Tdr in each pixel circuit U is connected in common to the power supply line 16. A capacitive element C is interposed between the gate and source (power supply line 16) of the drive transistor Tdr. A selection transistor Tsl for controlling the electrical connection between the gate of the driving transistor Tdr and the data line 14 is interposed.

  In the above configuration, when the selection transistor Tsl is turned on in accordance with the scanning signal G supplied to the scanning line 12, the data voltage S corresponding to the gradation designated for the light emitting element 20 is supplied from the data line 14 to the selection transistor. It is supplied to the gate of the drive transistor Tdr via Tsl. At this time, the electric charge corresponding to the data voltage S is accumulated in the capacitive element C, so that the gate of the drive transistor Tdr is maintained at the data voltage S even when the selection transistor Tsl is turned off. Therefore, the drive current Iel corresponding to the data voltage S is continuously supplied to the light emitting element 20.

  Next, a specific configuration of the light emitting region A will be described with reference to FIGS. 2 is a plan view showing a partial configuration of the light emitting region A, and FIG. 3 is a schematic cross-sectional view taken along line III-III in FIG. In FIGS. 2 and 3, the elements such as the scanning line 12, the data line 14, and the selection transistor Tsl are appropriately omitted. In each drawing referred to below, for the convenience of explanation, the ratio of dimensions of each element is appropriately changed from an actual apparatus.

  As shown in FIG. 2, in the present embodiment, the plurality of light emitting elements 20 (20R, 20G, 20B) are arranged in a matrix in the light emitting region A. Among the light emitting elements 20, the light emitting element 20R is a light emitting element for obtaining red output light, the light emitting element 20G is a light emitting element for obtaining green output light, and the light emitting element 20B obtains blue output light. It is a light emitting element for. In these light emitting elements 20, RGB colors are arranged in a stripe shape (that is, a horizontal stripe) in the X direction. Specifically, when the X direction is a column, the light emitting element 20R is arranged in the first column, the light emitting element 20G is arranged in the second column, and the light emitting element 20B is arranged in the third column. In addition, these light emitting elements 20 may be arranged so that each color of RGB is a vertical stripe (a stripe shape in the Y direction). For simplicity of explanation, FIG. 2 shows only the light emitting elements 20 of 3 columns × 4 rows, but in reality, a large number of light emitting elements 20 are arranged over a large number of rows and a large number of columns. Furthermore, for the purpose of facilitating the understanding of the present embodiment, only the light emitting element 20 and the auxiliary electrode 42 described later are shown by solid lines, but in actuality, the light emitting region A has multiple layers of various layers. The light emitting element 20 and the auxiliary electrode 42 are covered with other layers. Therefore, a specific example of this laminated structure will be described first with reference mainly to FIG.

  As shown in FIG. 3, each element of FIG. 1 such as the drive transistor Tdr and the light emitting element 20 is formed on the surface of the substrate 10. The substrate 10 is a plate material made of various insulating materials such as glass and plastic. Note that the light emitting device D of the present embodiment is a top emission type in which the emitted light from the light emitting element 20 is emitted to the side opposite to the substrate 10, so that the substrate 10 is not required to have light transmittance.

A drive transistor Tdr is disposed on the surface of the substrate 10. The drive transistor Tdr includes a semiconductor layer 31 formed of a semiconductor material on the surface of the substrate 10 and a gate electrode 32 facing the semiconductor layer 31 (channel region) with the gate insulating layer F0 interposed therebetween. The gate electrode 32 is covered with the first insulating layer F1. The source electrode 33 and the drain electrode 35 of the driving transistor Tdr are formed on the surface of the first insulating layer F1 and are electrically connected to the semiconductor layer 31 (source region / drain region) through the contact hole of the first insulating layer F1. . The surface of the substrate 10 on which the driving transistor Tdr is formed is covered with the second insulating layer F2. The first insulating layer F1 and the second insulating layer F2 is a transparent film body formed of an insulating material such as SiO _2.

  The pixel electrodes 21 are formed on the surface of the second insulating layer F 2 so as to be separated from each other for each light emitting element 20. The pixel electrode 21 is a rectangular electrode whose longitudinal direction is the Y direction, and is formed of a light-transmitting conductive material having a work function higher than that of the common electrode 22. The pixel electrode 21 is electrically connected to the drain electrode 35 of the drive transistor Tdr through a contact hole CH that penetrates the second insulating layer F2 in the thickness direction.

  A reflective layer 70 (70R, 70G, 70B) is formed in the second insulating layer F2. The reflective layer 70 is formed of, for example, a metal such as aluminum, or other highly reflective material, and reflects light emitted from the light emitting functional layer 23 upward in the drawing, so that the light emitting functional layer 23 and the pixel electrode 21 Located locally in the lower layer. Specifically, the reflective layer 70 overlaps with the opening 40a of the partition wall layer 40, and the region is wider than the opening 40a. In addition, the distance W between each of the reflective layers 70R, 70G, and 70B and the pixel electrode 21 is set so that each light color (R, G, B The depth of each reflective layer in the second insulating layer F2 is determined.

  A partition layer 40 is formed on the surface of the second insulating layer F2 on which the pixel electrode 21 is formed. As shown in FIG. 3, the partition layer 40 is an insulating film body and has an opening 40a. Each of the openings 40 a overlaps the pixel electrode 21. More specifically, the pixel electrode 21 is exposed through the opening 40a before the light emitting functional layer 23 is formed. The opening 40 a is narrower than the pixel electrode 21, and the end of the pixel electrode 21 is partially covered by the partition wall layer 40. The partition layer 40 insulates between the pixel electrodes 21 and the common electrode 22 formed thereafter, and insulates between the plurality of pixel electrodes 21. The partition layer 40 is made of, for example, a transparent resin such as acrylic or polyimide as the material of the partition layer 40.

  The light emitting functional layer 23 includes a light emitting layer and various functional layers for promoting or improving light emission by the light emitting layer (a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, a hole block layer, And a plurality of light emitting elements 20 are continuously formed so as to cover the entire region of the second insulating layer F2 on which the partition layer 40 is formed. The light emitting functional layer 23 includes a portion that enters the inside of the opening 40 a and contacts the pixel electrode 21 (that is, a portion that actually emits light) and a portion that is located on the surface of the partition layer 40. That is, the light emitting functional layer 23 is partitioned by the partition layer 40. Therefore, by providing the partition layer 40, each of the pixel electrodes 21 can be independently controlled, and a current can be independently supplied to each of the plurality of light emitting elements 20. The light emitting layer is made of a white organic material, and is formed, for example, by a deposition method in which an organic material is deposited on the surface, such as vacuum evaporation. However, although not shown, each of the light emitting elements 20 corresponds to each color of RGB so that each of the light emitting elements 20 has an independent light emitting functional layer 23, that is, the light emitting functional layer 23 is disposed only inside each of the openings 40a. The light emitting functional layer 23 including the light emitting layer of the organic material to be patterned may be patterned for each pixel. In this case, the color filter 54 described later is not necessarily provided. When patterning an organic material for each pixel, a deposition method or a method of discharging the organic material by ink jetting is used.

  The common electrode 22 is an electrode that is continuously formed over the plurality of light emitting elements 20 and covers the light emitting functional layer 23 and the partition wall layer 40, and is also disposed inside each of the openings 40a. That is, the common electrode 22 includes a portion facing the pixel electrode 21 with the light emitting functional layer 23 sandwiched inside the opening 40 a and a portion located on the surface of the partition wall layer 40. As shown in FIGS. 2 and 3, the portion of the stacked layer of the pixel electrode 21, the common electrode 22, and the light emitting functional layer 23 that is located inside the inner periphery of the opening 40 a as viewed from the Z direction (that is, common from the pixel electrode 21). A region where the drive current Iel flows through the electrode 22 is the light emitting element 20. In the light emitting functional layer 23, the region overlapping with the partition layer 40 does not emit light because current is blocked by the partition layer 40 interposed between the pixel electrode 21 and the common electrode 22. That is, the partition layer 40 functions as a means for demarcating the outline of each light emitting element 20.

  The common electrode 22 is formed of a light transmissive conductive material. The common electrode 22 is made of, for example, an oxidized conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), or a conductive material such as MgAg or Al formed to have a light-transmitting film thickness. In order for the common electrode 22 to function as a cathode, the common electrode 22 may include a material having a work function of 3.5 eV or less, such as an alkali metal or an alkaline earth metal. Therefore, the light emitted from the light emitting functional layer 23 to the opposite side of the substrate 10 and the light emitted from the light emitting functional layer 23 toward the substrate 10 and reflected from the surface of the pixel electrode 21 are transmitted through the common electrode 22 and emitted. . That is, the light emitting device D of this embodiment is a top emission type.

  By the way, when the common electrode 22 is formed so as to have optical transparency, the resistivity of the common electrode 22 becomes high, and the voltage drop in the surface becomes remarkable. Therefore, the voltage applied to each light emitting element 20 differs depending on the position in the plane of the common electrode 22 (in the XY plane), and as a result, the luminance of each light emitting element 20 may be uneven. . In order to suppress the above-described variation in the amount of light, in the present embodiment, the auxiliary electrode 42 is formed in the upper layer of the common electrode 22 in order to assist the conductivity of the common electrode 22. The auxiliary electrode 42 is formed of a light-shielding conductive material (for example, aluminum) having a lower resistivity than the common electrode 22 and is electrically connected to the common electrode 22. In the illustrated embodiment, the auxiliary electrode 42 is formed in the upper layer of the common electrode 22, but the auxiliary electrode 42 may be formed in the lower layer of the common electrode 22.

  Thus, the counter substrate 50 as a cap sealing body is attached to the substrate 10 on which the light emitting element 20 is formed. These are joined at a position not shown. The counter substrate 50 is made of, for example, glass or transparent plastic. A light shielding layer 52 as a black matrix is formed in the lower layer of the counter substrate 50. A plurality of light transmission parts 52a are formed in the light shielding layer 52, and light emitted from the light emitting element 20 is emitted upward in the drawing through the light transmission parts 52a. A color filter 54 (54R, 54G or 54B) is disposed in each of the light transmission parts 52a. The light shielding layer 52 is formed at a position overlapping the partition wall layer 40 when viewed from the Z direction.

  As shown in FIG. 2, the auxiliary electrode 42 of the present embodiment forms a plurality of columns extending in the X direction (first direction) in the light emitting region A including the light emitting elements 20 aligned in a matrix. . The pitch, which is the distance between the plurality of rows in the Y direction, is smaller than the dimension d1 of the light emitting element 20 in the Y direction. Thereby, a part of the auxiliary electrode 42 is formed at a position overlapping the light emitting element 20. The auxiliary electrode 42 is divided into a plurality of strip-shaped electrode portions (hereinafter referred to as “electrode strips 42a”) in each row. The plurality of electrode bands 42a are arranged with a gap 42b.

  On the other hand, in the auxiliary electrode 42 of the present embodiment, in the Y direction (second direction) perpendicular to the X direction, an electrode band 42a belonging to a column adjacent to the column is longer than the gap 42b in the column 42a. Are lined up. Thereby, the gaps 42b are not arranged in two adjacent rows. That is, the gaps 42b are not arranged in a direction orthogonal to the direction in which the electrode strips 42a are arranged.

  By the way, since the auxiliary electrode 42 is a reflective member, the light emitted from the light emitting element 20 is reflected (not transmitted) when arranged so as to overlap the light emitting element 20. Therefore, in the present embodiment, the reflective layer 70 (70R, 70G, 70B) is provided on the opposite side of the auxiliary electrode 42 with the light emitting element 20 interposed therebetween, so that the light emitting element is interposed between each reflective layer 70 and the auxiliary electrode 42. The light emitted from 20 is reciprocated. More specifically, the distance Rsr between the auxiliary electrode 42 and the reflective layer 70R (that is, the distance W between the reflective layer 70R and the pixel electrode 21) is set so as to be suitable for increasing the red wavelength. The distance Rsg (that is, the distance W between the reflective layer 70G and the pixel electrode 21) is set so as to be suitable for increasing the green wavelength, and the distance Rsb between the reflective layer 70B (that is, between the reflective layer 70B and the pixel electrode 21). The distance W) is set to be suitable for increasing the blue wavelength. Accordingly, the auxiliary electrode 42 and the reflective layer 70 (70R, 70G, or 70B) reciprocate the light emitted from the light emitting element 20 between them to emit light having a specific wavelength (red, green, or blue) as the light emitting layer. It acts as a resonator that is stronger than when it is emitted from. Note that light passing through a region where the auxiliary electrode 42 is not formed (a region where the common electrode 22 enters the opening 40a and does not overlap with the auxiliary electrode 42) does not have a specific wavelength enhanced by resonance. , It proceeds toward the exit surface with the same intensity. When combined with the light whose wavelength intensity is enhanced by the resonator, the chromaticity associated with one light emitting element 20 is improved. As described above, the auxiliary electrode 42 is used not only for reducing the resistance of the common electrode 22 but also by adding a function as a reflective layer, thereby suppressing a voltage drop of the common electrode 22 and an image with high light chromaticity. Is obtained.

  Each electrode strip 42a is divided into a predetermined length from the viewpoint of suppressing peeling due to stress. In this example, the electrode strips 42a are formed so as to straddle adjacent light emitting elements 20 as shown in the figure. In the common electrode 22, a portion where current flows is a region where the light emitting element 20 is located. If each electrode strip 42a is not formed in a region where the light emitting element 20 is located, the common electrode 22 becomes a current path. However, since the resistance value of the common electrode 22 is higher than the resistance value of each electrode band 42a, a voltage drop occurs, resulting in luminance unevenness. According to the present embodiment, since each electrode band 42a is formed so as to straddle the adjacent light emitting elements 20, a voltage drop between the adjacent light emitting elements 20 can be suppressed, and as a result, luminance unevenness is greatly increased. Can be improved. In the illustrated example, each electrode band 42a is formed so as to straddle the four light emitting elements 20, but is not limited thereto, and straddles at least two adjacent light emitting elements 20 (one electrode band 42a). May be partially overlapped with both of the two light emitting elements 20).

  In addition, since the auxiliary electrode 42 is made of a metal material such as aluminum, it may appear as reflected light to the human eye and may become stray light that hinders image recognition. For this reason, when the auxiliary electrode 42 is disposed over a long distance, the reflected light stands out in a line. Therefore, in the present embodiment, the auxiliary electrode 42 is divided into short pieces and the gaps 42b are arranged at predetermined intervals so that the auxiliary electrode 42 does not continue over a long distance. Furthermore, if the gaps 42b are concentrated and arranged in a specific row, there may be a row in which the reflected light is interrupted in the gap between the rows where the reflected light is visually recognized, and the reflected light may be noticeable. Therefore, in the present embodiment, the gap 42b does not line up in two adjacent rows by arranging the electrode band 42a belonging to the row adjacent to this row in the gap 42b of one row and longer than this gap 42b. It is configured.

  As described above, since the light emitting device D of the present embodiment is a top emission type, the common electrode 22 is formed of a light transmissive material such as ITO. On the other hand, the auxiliary electrode 42 is formed of a material such as a metal having a lower resistance than the common electrode 22. For this reason, when the auxiliary electrode 42 and the common electrode 22 made of different materials are bonded to each other and arranged over a long distance, the stress of the auxiliary electrode film itself (stress such as tensile stress and compressive stress) and the difference in thermal strain due to temperature change The electrode may be deformed / damaged due to the thermal stress caused by. Therefore, in the present embodiment, the distance in the longitudinal direction of each electrode strip 42 a of the auxiliary electrode 42 is shortened, thereby partially releasing the stress generated between the electrode strip 42 a and the common electrode 22.

  In forming the auxiliary electrode 42 in the manufacturing process of the light emitting device D, a deposition method (for example, vacuum evaporation, sputtering method, etc.) is often used in which a portion other than the electrode is covered with a mask to deposit a material. FIG. 4A is a view showing an example of the shape of a mask used when the auxiliary electrode 42 of this embodiment is formed by a deposition method, and FIG. 4B is a comparative example showing the shape of another mask. It is. FIG. 5 is a diagram for explaining how the auxiliary electrode 42 is formed by a deposition method using a mask.

  As shown in FIG. 4A, the mask 43A is a sheet-like member having a plurality of openings 43a, and is formed from a metal material. The mask 43A has a size and a shape that substantially match the light emitting region A. As can be understood from FIG. 5, in the deposition method, light is emitted across the mask 43A in a state where the mask 43A is opposed to and approaches the deposition surface (that is, the common electrode 22) of the light emitting device D being manufactured. Material is sprayed and deposited from the opposite side of the device D. In this method, only the material that has passed through the opening 43 a and reached the common electrode 22 is deposited to form the auxiliary electrode 42. For this reason, the size and shape of the opening 43a substantially match those of the electrode strip 42a. Therefore, in the mask 43A, a strip-shaped opening 43a as a portion facing the electrode strip 42a constitutes a plurality of rows extending in the X direction, and a spacing as a portion facing the gap 42b is provided in each row. By being formed, the opening 43a is connected (connected) by a region facing the gap 42b.

  In the mask 43B having a shape shown as a comparative example in FIG. 4B, an opening 43b is provided instead of the opening 43a. That is, according to the mask 43B, a long auxiliary electrode corresponding to the size and shape of the opening 43b is formed on the surface of the common electrode 22. The auxiliary electrode in the comparative example is formed at a position that does not overlap the light emitting element 20.

  Here, the process of forming the auxiliary electrode 42 in the method for manufacturing the light emitting device D according to the present embodiment will be described. The auxiliary electrode 42 of the present embodiment is formed by vapor deposition (vacuum vapor deposition) using a mask. All elements other than the auxiliary electrode 42 can be generated by a known technique.

  FIG. 5 is a cross-sectional view (a cross-section corresponding to FIG. 3) for explaining the process of forming the auxiliary electrode 42, but the top and bottom of FIG. This is because in vacuum vapor deposition, the surface to be vapor-deposited faces downward and the mask is opposed to the vapor-deposition surface, and the material evaporated by heat rises and is deposited on the vapor-deposition surface.

  First, prior to the formation of the auxiliary electrode 42, an evaporation mask 43A is prepared. As shown in FIG. 4A, the mask 43A is formed in a shape that opens the opening 43a and shields other regions. The opening 43a of the mask 43A is a slit-like region (hereinafter referred to as “region MA”; FIG. 4A) extending along the X direction so as to face the region where the auxiliary electrode 42 is formed. . On the other hand, the region other than the opening 43a of the mask 43A (hereinafter referred to as “region MB”; FIG. 4A) faces the region of the light emitting region A excluding the auxiliary electrode 42 and including the gap 42b. Includes area.

  The auxiliary electrode 42 is formed by vapor deposition using the mask 43A. That is, the light emitting device D at the stage where the common electrode 22 is formed (before the counter substrate 50 is installed) is disposed in a vacuum, and the mask 43A is disposed so as to face the light emitting functional layer 23. Then, a vapor M of a conductive material having a resistivity lower than that of the common electrode 22 is blown from the mask 43A side to the light emitting device D. In the above process, the vapor M blocked by the region MB of the mask 43A does not reach the light emitting device D, and the vapor M that has passed through the region MA of the mask 43A selectively adheres and accumulates on the surface of the light emitting functional layer 23. Thus, the auxiliary electrode 42 is formed in the shape of FIG.

  At the time of vapor deposition, it is preferable that the mask 43 be arranged parallel to the surface to be vapor-deposited (opposed), so that the end of the mask 43 is gripped and tensioned (applied). Done. Assume that the same tension is applied to the mask 43A and the mask 43B. In that case, since the mask 43B has a portion (opening 43b) that opens over the entire width of the light emitting region A in the X direction, the strength is not sufficient. For this reason, when the tension exceeds a certain level, the peripheral portion of the opening 43b may be pulled in the Y direction and the opening 43b may expand in the Y direction. As a result, the auxiliary electrode 42 is formed in a state where it is displaced from the intended region. On the other hand, if the tension to be applied is weakened to prevent the opening from expanding, the mask is bent by the weight of the mask itself, and the accuracy of the position and dimensions of the auxiliary electrode 42 is lowered. On the other hand, the distance in the X direction of the opening 43a of the mask 43A is shorter than the opening 43b of the mask 43B. Further, since the gaps formed in each row (connection portions for the mask) are arranged in a distributed manner, the strength against the force applied in the Y direction is improved as compared with the mask 43B. Therefore, according to the configuration of the mask 43A, it is possible to dispose the mask 43A with a small degree of deflection so as not to impair the accuracy of the position and dimensions of the auxiliary electrode 42. Each electrode strip 42a may be configured such that the length of each electrode strip 42a is shorter than the dimension d2 of the light emitting element 20 in the X direction. Thereby, the aperture ratio of the light emitting device D is increased and the strength of the mask is further improved. In other words, it is possible to reduce errors in the position and dimensions of the auxiliary electrode 42 while suppressing a decrease in the aperture ratio.

  In addition, when the mask 43 is opposed to the deposition surface, the mask is aligned to adjust the position of the mask in the XY plane to an appropriate position. In the configuration in which the auxiliary electrode 42 is formed at a position that does not overlap the light emitting element 20 as in the comparative example, the mask 43B is disposed corresponding to the light emitting element 20 (the opening 43b is disposed so as not to overlap the light emitting element). However, since the light emitting elements 20 are arranged at intervals of microns, high alignment accuracy is required. However, the auxiliary electrode 42 partially overlaps the light emitting element 20 because the pitch of the row of the auxiliary electrodes 42 in this embodiment is smaller than the dimension d2 of the light emitting element 20 in the X direction. Therefore, according to the auxiliary electrode 42 of the present embodiment, it is not necessary to adjust the position of the mask corresponding to the light emitting element 20, and a slight shift of the mask is allowed.

  As described above, the opening 43a of the mask 43A used when forming the auxiliary electrode 42 of the present embodiment is divided into short lengths without opening over a long distance (the mask corresponds to the gap 42b of the auxiliary electrode 42). As shown in FIG. 4B, the strength of the mask 43A is higher than that in the case where the auxiliary electrode 42 is formed using a mask 43B having a long opening 43b. It can be maintained sufficiently. As a result, it is possible to suppress errors in the size and position of the auxiliary electrode 42 caused by deformation of the mask 43A (for example, deformation due to application of tension or deflection due to its own weight). In addition, since the auxiliary electrode 42 of this embodiment is disposed at a position overlapping the light emitting element 20, it is not necessary to adjust the position of the mask in the XY plane so that the opening of the mask does not overlap the light emitting element. . Therefore, high mask alignment accuracy is not required, and manufacturing is simplified. Furthermore, according to the present embodiment, since the electrode band 42 a overlapping with the light emitting elements 20 is formed so as to straddle the adjacent light emitting elements 20, variation in luminance between the light emitting elements 20 is suppressed.

  In addition, the auxiliary electrode 42 of the present embodiment is disposed at a position overlapping the light emitting element 20, and the reflection layer 70 is provided at a position opposite to the auxiliary electrode 42 with the light emitting element 20 interposed therebetween, whereby emission from the light emitting element 20 is performed. Light is reciprocated between the auxiliary electrode 42 and the reflective layer 70. As a result, specific wavelengths of the emitted light are resonated and strengthened, and the purity of the color of the light is improved.

  Furthermore, since the auxiliary electrode 42 of the present embodiment has a short distance on the long side of each electrode strip 42a, the film stress and heat applied to the bonded layers are compared with the case of forming a long electrode strip. The stress is relaxed, and the life of the light emitting device D with respect to temperature change is improved.

  In addition, as compared with the case where a continuous electrode band is formed without providing the gap 42b, the light emitting device D can be viewed from the auxiliary electrode 42 that can be seen by the human eye from the emission surface side (opposite substrate 50 side). The reflected light can be reduced. In addition, since the gaps 42b are arranged so as not to line up in a row adjacent to each other in the Y direction, a portion where the reflected light is visually recognized (electrode band 42a portion) and a portion where the reflected light is not visible (gap 42b portion) are dispersed. In addition, the possibility that the distribution is visually recognized is reduced.

  In the example shown in FIG. 2, the interval between the columns of the auxiliary electrodes 42 (that is, the interval in the Y direction of the electrode strips 42a) is substantially equal, but is not limited to this. For example, according to the type (20R, 20G, 20B) of the light emitting element 20, the interval in the Y direction of the electrode band 42a may be varied. Hereinafter, this aspect will be described in detail.

  FIG. 6 is an arrangement example of the auxiliary electrode 42 in a mode in which the interval in the Y direction of the electrode band 42 a is changed according to the type of the light emitting element 20. Here, the light emitting element 20 is classified into a plurality of types of light emitting elements 20R, 20G, and 20B according to the peak wavelength of the emitted light. That is, the wavelength (peak wavelength) at which the intensity of the light itself emitted from the light emitting layer is maximum is any of R, G, and B, or the emitted light passes between the reflective layer 70 and the auxiliary electrode 42. By reciprocating (that is, due to resonance), the peak wavelength is classified as R, G, or B. Therefore, in this aspect, the rows of electrode strips 42a are arranged in a fence shape so that one row overlaps a plurality of light emitting elements 20 of the same type, and the types of light emitting elements 20 that overlap each row. Accordingly, the intervals in the Y direction of the electrode strips 42a are varied. Specifically, as shown in FIG. 6, when the RGB colors are arranged in stripes in the X direction, the electrode strips 42 a are arranged so as to extend in the X direction, thereby forming one column. Are overlapped with a plurality of light emitting elements 20 of the same type (for example, a plurality of light emitting elements 20R). Furthermore, the rows of the electrode strips 42a are arranged in a fence shape so that a plurality of rows overlap with one light emitting element 20, and the interval between the rows as the gap of the fence is an electrode overlapping the red light emitting element 20R. A group of rows of strips 42a (hereinafter referred to as “electrode strip group 42R”), a group of rows of electrode strips 42a (hereinafter referred to as “electrode strip group 42G”) overlapping the green light emitting elements 20G, and a blue light emitting device 20B. They are different in the group of overlapping electrode bands 42a (hereinafter referred to as “electrode band group 42B”). In such a configuration, each electrode band group 42R, 42G, 42B functions as a wire grid type polarization beam splitter. Here, the gap between the fences in each of the electrode strip groups 42R, 42G, and 42B is set to an interval suitable for each of the light emitting elements 20R, 20G, and 20B. That is, the interval is set according to the peak wavelength of the light transmitted through the common electrode 22. As a result, only the light in the wavelength band centered on the peak wavelength of the transmitted light is selectively transmitted through the fence of the electrode band, so that the purity of the output color is improved. As described above, by appropriately changing the interval between the rows of the electrode strips 42a, it is possible to cause the auxiliary electrode 42 to function as a filter and to produce an additional effect of further increasing the color purity.

<B: Second Embodiment>
Next, a second embodiment of the present invention will be described. In the present embodiment, elements common to the first embodiment are denoted by the same reference numerals as those described above, and detailed description thereof is omitted as appropriate.

  FIG. 7 is a plan view showing a configuration of the light emitting region A according to the second embodiment. In the first embodiment, the configuration in which the auxiliary electrode 42 is formed as a strip-shaped electrode strip 42a is illustrated. On the other hand, the auxiliary electrode 42 in the present embodiment is formed in a polka dot shape as a plurality of circular electrode portions (hereinafter referred to as “circular electrode 42 c”).

  As illustrated in FIG. 7, the auxiliary electrode 42 includes a plurality of circular electrodes 42 c aligned in the X direction, so that each column of the auxiliary electrodes 42 constitutes a plurality of columns extending in the X direction (first direction). In each row, the electrodes are divided into a plurality of circular electrodes 42c with a gap 42b. In two rows adjacent in the Y direction (second direction), the gap 42b is arranged next to the circular electrode 42c, so that the two circular electrodes 42c are not aligned in the Y direction (that is, the two gaps 42b). Are not lined up in the Y direction). The pitch of the rows of the auxiliary electrodes 42 is smaller than the dimension d1 of the light emitting elements 20 in the Y direction. Furthermore, the interval (gap 42b) between the adjacent circular electrodes 42c in the row of the auxiliary electrodes 42 is smaller than the dimension d2 of the light emitting element 20 in the X direction. Therefore, a part of the auxiliary electrode 42 is formed at a position overlapping the light emitting element 20. In the example shown in the figure, the circular electrode 42 c is substantially circular, but may be elliptical.

  According to this embodiment, the same effect as the first embodiment can be obtained. Furthermore, since the polka dot-shaped circular electrode 42c is formed in the present embodiment, the distance at which the auxiliary electrode 42 and the common electrode 22 are joined to each other is shorter than in the case where the strip-shaped electrode band 42a is formed. Therefore, the film stress or thermal stress applied to the bonded layers can be easily released, and the occurrence of a situation where the light emitting device is damaged by the stress can be reduced. In addition, a decrease in the aperture ratio is suppressed as compared with the case where the auxiliary electrode is formed in a band shape.

  In addition, as described above, when the auxiliary electrode 42 is formed by using a deposition method using a mask, a mask having a portion facing the auxiliary electrode 42 as an opening is prepared. Since the circular electrode 42c of this embodiment is circular, a mask having a circular opening is formed. Compared to a square electrode, since there are few portions where stress concentrates on the mask, it is difficult to break even if tension is applied to the mask, and the strength of the mask can be improved. Further, compared to an opening having a shape (for example, long) in which the lengths in two directions orthogonal to each other are significantly different, the force applied to the mask becomes uniform when tension is applied to the mask. The degree of deformation is small. In addition, the circular electrodes 42c are arranged with a gap 42b, and the circular electrodes 42c are not arranged in two adjacent rows in the Y direction because the gaps 42b are not arranged in the Y direction. Therefore, the openings of the mask as the region facing the circular electrode 42c are not arranged in any of the X and Y directions, so that the strength of the mask is improved. Thus, according to the auxiliary electrode 42 of the present embodiment, the error of the auxiliary electrode and the damage to the mask due to the deformation and deflection of the mask are suppressed.

<D: Modification>
The present invention is not limited to the above-described embodiments. For example, the following modifications are possible.

  As described above, the auxiliary electrode 42 is formed to suppress a voltage drop generated at the common electrode 22. Therefore, for those skilled in the art, it is possible for those skilled in the art to appropriately adjust the density of the auxiliary electrode 42 (the size, shape, and arrangement interval of each electrode band 42a and the circular electrode 42c) according to various conditions such as the resolution number and the size of the light emitting region A. It is self-explanatory.

  In the first and second embodiments, the common electrode 22 has been described as a cathode, but may be an anode. Further, the common electrode 22 is not necessarily provided in common to all the light emitting elements 20 in the light emitting region A, and the light emitting region A may be provided for each sub-region.

  In the above-described embodiment, the top emission type light emitting device D has been described, but a bottom emission type may be used. In this case, the common cathode 22 is not required to be a light-transmitting member, but the common cathode 22 cannot be thickened because of the film stress (stress) applied to the light emitting layer (that is, the resistance value is low). May become high). Therefore, even in the case of the bottom emission type, the resistance of the common electrode 22 can be reduced by using the auxiliary electrode 42 as in the above embodiment.

  In the first and second embodiments, the reflection layer 70 (70R, 70G, and 70B) is provided so that the auxiliary electrode 42 and the reflection layer 70 act as a resonator. However, the reflection layer 70 is provided. Instead, the pixel electrode 21 may be formed of a reflective film that reflects light so that the pixel electrode 21 functions as a reflective layer. In this case, the distance between the auxiliary electrode 42 and the pixel electrode 21 as the reflection layer may be appropriately changed depending on the type (peak wavelength) of the light emitting element 20 in terms of the thickness of the light emitting functional layer 23.

<E: Application example>
Next, an electronic apparatus to which the light emitting device D according to the present invention is applied will be described. FIG. 8 is a perspective view showing a configuration of a mobile personal computer in which the light emitting device D according to the embodiment is applied to a display device. The personal computer 2000 includes a light emitting device D as a display device and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002.

  FIG. 9 shows a mobile phone to which the light emitting device D according to the above embodiment is applied. A cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and a light emitting device D as a display device. By operating the scroll button 3002, the screen displayed on the light emitting device D is scrolled.

  FIG. 10 shows an information portable terminal (PDA: Personal Digital Assistant) to which the light emitting device D according to the above embodiment is applied. The information portable terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and a light emitting device D as a display device. When the power switch 4002 is operated, various kinds of information such as an address book and a schedule book are displayed on the light emitting device D.

  Electronic devices to which the light-emitting device according to the present invention is applied include digital still cameras, televisions, video cameras, car navigation devices, pagers, electronic notebooks, electronic papers, calculators, word processors in addition to those shown in FIGS. , Workstations, videophones, POS terminals, light sources such as printer heads that form a latent image by irradiating an image carrier in an image printing apparatus using electrophotography, printers, scanners, copiers, video Examples include a player and a device equipped with a touch panel.

It is a circuit diagram which shows the electrical constitution of the light-emitting device which concerns on 1st Embodiment of this invention. It is a top view which shows the structure of a light emission area | region. It is the schematic of the cross section seen from the III-III line | wire in FIG. It is an example of the mask used for formation of an auxiliary electrode. It is a figure for demonstrating the process of forming an auxiliary electrode. It is an example of arrangement | positioning of an auxiliary electrode. It is a top view which shows the structure of the light emission area | region of the light-emitting device which concerns on 2nd Embodiment of this invention. It is a perspective view which shows the external appearance of the personal computer which has the light-emitting device based on this invention. It is a perspective view which shows the external appearance of the mobile telephone which has a light-emitting device which concerns on this invention. It is a perspective view which shows the external appearance of the portable information terminal which has the light-emitting device which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Substrate, 12 ... Scanning line, 14 ... Data line, 16 ... Power supply line, 18 ... Ground line, 20, 20R, 20G, 20B ... Light emitting element, 21 ... Pixel electrode (first electrode) ), 22 ... Common electrode (second electrode), 23 ... Light emitting functional layer, 31 ... Semiconductor layer, 32 ... Gate electrode, 33 ... Source electrode, 35 ... Drain electrode, 40 ... Partition layer, 40a: Opening, 42: Auxiliary electrode, 42a: Electrode band, 42b: Gap, 42c: Circular electrode, 42R, 42G, 42B ... Electrode band group, 43, 43A, 43B ... Mask, 43a , 43b... Opening, 50... Opposite substrate, 52... Light-shielding layer, 52 a... Light transmissive portion, 54 ... Color filter, 70, 70R, 70G, 70B. CH ... Contact hole, D ... Light emitting device, F0 ... Game G insulating layer, F1... First insulating layer, F2... Second insulating layer, MA, MB... Region, Tdr... Driving transistor, Tsl.

Claims (8)

A light emitting region in which a plurality of light emitting elements each having a first electrode, a second electrode, and a light emitting layer sandwiched between the first electrode and the second electrode are arranged;
An auxiliary electrode formed of a material having a lower resistivity than the second electrode and electrically connected to the second electrode;
A reflection layer that reflects the light emitted from the light emitting layer toward the second electrode;
The second electrode is a light transmissive member formed continuously over the plurality of light emitting elements,
The auxiliary electrode constitutes a plurality of columns each extending in the first direction in the light emitting region, and the auxiliary electrode is divided into a plurality of electrode portions in each column and arranged with a gap therebetween,
The pitch of the plurality of rows in the second direction, which is a direction orthogonal to the first direction, is smaller than the dimension of the light emitting elements in the second direction,
Light emitted from the light emitting layer is reciprocated between the auxiliary electrode and the reflective layer. The light-emitting device according to claim 1, wherein a pitch in each row of the electrode portions is smaller than a dimension in a first direction of each light-emitting element. The light emitting device according to claim 1, wherein the plurality of electrode portions include electrode portions formed so as to straddle two adjacent light emitting elements in the same row. Each of the electrode portions is a strip-shaped electrode strip extending in the first direction,
In the second direction, an electrode band belonging to a row adjacent to the row and longer than the gap is arranged in the gap in one row, so that the gap in two adjacent rows is not arranged in the second direction. The light-emitting device according to claim 1. Each of the electrode portions is a strip-shaped electrode strip extending in the first direction,
The plurality of light emitting elements are classified into a plurality of types according to a peak wavelength of light transmitted through the second electrode, and constitute a plurality of columns extending in the first direction.
In one row of the light emitting elements, a plurality of light emitting elements of one kind are arranged,
The interval in the said 2nd direction of the said electrode strip in each row | line | column of the said light emitting element was set according to the peak wavelength of the light which permeate | transmits the said 2nd electrode with which these electrode strips overlapped. The light-emitting device in any one. The light emitting device according to claim 1, wherein each of the electrode portions is substantially circular.   The electronic device provided with the light-emitting device in any one of Claims 1-6. A method of manufacturing a light emitting device according to claim 1,
A first step of preparing a mask having an opening in a region where each electrode portion of the auxiliary electrode is formed in the light emitting region;
A second step of making the mask face the surface of the second electrode;
And a third step of forming the auxiliary electrode by depositing a conductive material with the mask facing the second electrode.

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