JP2007262510A - Method of manufacturing nanohole structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nanohole structure having regularly arrayed nanoholes formed without using dry etching. <P>SOLUTION: The nanohole structure in which a plurality of the nanoholes 12 are formed is manufactured. A plurality of openings 6a penetrated through the surface of a material 4 to be worked are formed with a regularly arrayed pattern on a resist 6 provided on the material 4 to be worked. The same material as the material 4 to be worked is deposited in the openings 6a using the resist 6 as a mask to form projecting parts 10A having a thickness smaller than the depth of the openings 6a. The resist 6 on the material 4 to be worked is removed to remove the deposit on the resist 6. The material 4 to be worked is anodically oxidized in a state that the projecting part 10A remains on the surface of the material 4 to be coated to form the plurality of the nanoholes 12. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a nanohole structure, and more particularly to a method for manufacturing a nanohole structure having a large number of regularly arranged nanoholes, and a nanostructure device using the same.

  Nano-sized structures (nanostructures) are attracting attention as novel functional materials that exhibit different characteristics from existing structures. As a method for producing a nanostructure, there is a method for producing a nanostructure directly using a fine pattern forming technique such as photolithography or electron beam exposure. However, this method has a problem that the processing accuracy is limited and the throughput is poor.

  Meanwhile, methods for producing nanostructures based on self-organized structures have been developed. This manufacturing method is considered to be able to manufacture a very fine structure in a wider range, in a shorter time, and at a lower cost depending on conditions, and many studies have been made.

  One of the methods using such a self-organized structure is an anodic oxidation method capable of manufacturing a structure having nanoholes with good controllability and at low cost. For example, when aluminum (Al) and its alloy are anodized in an acid solution, a porous oxide film is obtained. In this porous oxide film, a characteristic structure is realized in which nanoholes having a very high aspect ratio and having a diameter of several nm to several hundred nm are uniformly arranged at intervals of several nm to several hundred nm. The interval, diameter, and height of the nanoholes can be controlled by changing / adjusting the applied voltage, anodizing time, etc. during anodizing.

  The arrangement of alumina nanoholes obtained as described above is self-organizing, and there are differences in domain size depending on the conditions, but there is a characteristic that it is generally multidomain. Here, when there are regular irregularities on the surface of aluminum or the like to be anodized, it is known that nanoholes start to grow from the recessed portion by selecting an anodizing condition corresponding to the interval. .

  As a method for completely ordering the nanohole array using this property, an imprint method has been proposed in which a depression at the start of growth is formed by pressing a mold (pressing die) (for example, see Non-Patent Document 1). According to this imprint method, if there is a mold produced using electron beam drawing or the like, a finer pattern processing of 100 nm or less, which is difficult due to the wavelength limit, can be performed while maintaining high productivity. .

  From the same principle, nanoimprint lithography using imprinting on a resist also enables regular arrangement of nanoholes (see, for example, Non-Patent Document 2). Examples of applications of such alumina nanoholes include peeling off the film on which nanoholes are formed and using them as filters, or filling nanoholes with various materials for magnetic recording media, photonic devices, memories, etc. It is considered to be used.

Also, in a nanostructure manufacturing method in which pores are formed by anodizing or anodizing a workpiece such as aluminum, the resist on the workpiece is subjected to interference exposure and development, and the resist penetrates to the workpiece surface. After forming a regular nanostructure pattern by forming the above-mentioned sites, the work piece is anodized or anodized to form a pore body having pores regularly arranged corresponding to the regular structure pattern A method has been proposed (see, for example, Patent Document 1).
JP 2000-315785 A H. Masuda et al. , Appl. Phys. Lett. , 71, 2770 (1997) S. Y. Chou et al. , Appl. Phys. Lett. , 67, 3114 (1995)

When a device using a nanohole structure is actually manufactured, it needs to be formed into a structure having a somewhat large area. In that case, the imprint method using the mold described above is not realistic because a very strong force is required when pressing the mold. For example, in order to form a recess for forming a nanohole having a diameter of about 100 μm on an aluminum thin film, even if the thin film is heated and softened, a large push of ² to 3 ton / cm ^{2 is} applied to one nanohole. Pressure is required.

  On the other hand, the above-described nanoimprint lithography is suitable as a method of forming nanoscale irregularities in a large area. However, nanoimprint lithography requires a step of dry etching the resist in a vacuum, which increases the manufacturing cost. In addition, chlorine-based gas is mainly used for dry etching of aluminum or the like, but generally, resists are not resistant to chlorine-based gas, so that it is difficult to perform etching with a sufficient depth. As the pattern formed by the resist becomes finer, it becomes more difficult to perform etching with a sufficient depth. In addition, it is known that aluminum takes in a large amount of chlorine-based gas, and chlorine in aluminum may inhibit nanohole formation by anodization.

  As a further method for ordering the arrangement, as proposed in Patent Document 1 above, the exposed surface of the regularly arranged aluminum or the like is regulated by exposing and developing the resist applied on the film of aluminum or the like. There is a method in which the electrodes are formed in an arrayed state and anodized in that state. However, in reality, it is difficult to control the size and regular arrangement of nanoholes by this method.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for producing a nanohole structure having regularly arranged nanoholes formed without using dry etching.

  In order to achieve the above-described object, according to the present invention, there is provided a method for manufacturing a nanohole structure in which a plurality of nanoholes are formed, wherein the resist provided on a workpiece is arranged in a regular arrangement pattern. A plurality of openings penetrating to the surface of the workpiece are formed, and the same material as the workpiece is deposited in the opening using the resist as a mask to form a convex portion having a thickness smaller than the depth of the opening. And removing the resist on the workpiece, thereby removing deposits on the resist, and anodizing the workpiece with the protrusions remaining on the surface of the workpiece. And the manufacturing method of the nanohole structure characterized by forming the said several nanohole is provided.

  In the method for producing a nanohole structure according to the present invention, the workpiece is preferably made of a material mainly composed of aluminum. The array pattern may be a triangular lattice pattern formed by repeating regular triangles, and the array pattern period of the nanoholes formed may be 1 / √3 of the triangular lattice pattern period. Furthermore, the opening on the resist may be formed by pressing a pressing die having projections corresponding to the plurality of openings against the resist on the workpiece. Further, it is preferable that the resist remaining in the opening is removed by plasma etching after the opening is formed.

  According to the present invention, a nanohole structure having nanoholes regularly arranged by anodic oxidation can be manufactured without using dry etching required in conventional nanoimprint lithography. The method for producing a nanohole structure according to the present invention can produce a large-area nanohole structure in a much shorter time and at a lower cost than a production method using a semiconductor processing technique such as electron beam drawing. Depending on the arrangement of the protrusions of the pressing mold used, a regular array nanohole structure having an interval shorter than the protrusion pattern interval of the pressing mold can be formed. Therefore, the nanohole structure formed by anodic oxidation can be applied to various forms and contribute to the practical application of a novel functional material using the nanohole structure.

  One embodiment of the present invention will be described below.

  In existing nanoimprint lithography, after transferring the pattern to the resist, the surface of the workpiece exposed in the opening formed by pattern transfer is removed by dry etching, so that a desired concavo-convex pattern is formed on the surface of the workpiece. Form. Therefore, a recess corresponding to the pattern transferred to the resist is formed on the workpiece, and when the workpiece is anodized, nanoholes grow from the recess to the inside of the workpiece.

  In the embodiment of the present invention, the same material as that of the workpiece is further deposited on the surface of the workpiece exposed by pattern transfer, and the plurality of projections corresponding to the transfer pattern is opposed to the formation of the recess. Forming part. At this time, the same material as the workpiece is deposited in the opening, and at the same time, the same material as the workpiece is deposited on the resist. Therefore, the resist on the workpiece and the same material as the workpiece deposited thereon are removed by lift-off by dissolving the resist. As a result, only a plurality of protrusions made of the material deposited in the resist openings remain on the surface of the workpiece.

  Here, when a plurality of protrusions are formed on the surface of the workpiece, a portion surrounded by the protrusions becomes a recess when viewed from the top of the protrusion. That is, in this embodiment, a desired concavo-convex pattern is formed on the workpiece by forming a plurality of protrusions (convex portions) with the same material on the surface of the workpiece.

  In the nanohole structure formed by anodization, when there are irregularities regularly arranged on the surface of the workpiece, if an anodizing voltage corresponding to the interval between the depressions is applied to the workpiece, the nanoholes are formed from the depressions. It is known to grow. According to the manufacturing method of the nanohole structure according to the present embodiment, regular exposure of the surface of the workpiece by imprinting or exposure and development to the resist, deposition of the workpiece on the exposed portion, and resist exposure By combining with lift-off, irregularities regularly arranged on the workpiece surface are formed.

  Here, the uneven structure formed on the surface of the workpiece depends on the pattern shape of the resist. For example, let us consider a case where the concave portions of the mold are arranged in the form of dots when the pressing surface of the mold (pressing die) used in the imprint method is viewed from directly above. At that time, the imprint on the resist by the mold (after that, if necessary, removal of the resist residue by oxygen plasma), the deposition of the workpiece, and the recesses on the workpiece surface formed through the resist lift-off are also marked. Will be arranged in a shape. In that case, by performing anodic oxidation at a voltage corresponding to the interval between the concave portions arranged in the form of dots, nanoholes can be grown starting from the concave portions to form a regularly arranged nanohole structure.

  On the other hand, when the convex portions of the mold are arranged in a state close to a point, the convex portions of the workpiece after the resist lift-off are arranged in a dot shape. In that case, the center of the concave portion defined as a portion surrounded by the convex portion becomes the growth start point of the nanohole. Here, the distance between the centers of the concave portions may be different from the distance between the convex portions. For example, when the convex portions are arranged in a triangular lattice shape combining a number of regular triangles, the distance between the centers of the concave portions surrounded by the convex portions is 1 / √3 of the distance between the convex portions. Therefore, an anodization is performed with an appropriate voltage corresponding to 1 / √3 of the distance between the protrusions, thereby forming a regular array nanohole structure having an interval shorter than the mold pattern interval (in this case, 1 / √3). can do.

  As described above, when the convex portions are arranged in a regular triangular lattice shape, the formed nanoholes are arranged in a regular hexagonal shape. That is, a nanohole grows starting from each vertex of the regular hexagon, but since the convex portion is formed at the center of the regular hexagon, the center of the regular hexagon cannot be the starting point of the nanohole corresponding to the concave portion. .

  However, at the stage of growing nanoholes by proceeding with anodization, nanoholes are also formed at positions where there are convex portions at the center of the regular hexagon due to the self-repairing action during nanohole growth. The self-healing action at the time of nanohole growth is an action in which, when a plurality of nanoholes grow, the arrangement is automatically corrected so that the nanoholes are aligned at equal intervals.

  As described above, when nanoholes start growing from the position of each vertex of the regular hexagon, if there is also a nanohole at the center of the regular hexagon, an equilateral triangle is arranged, and the distance between them becomes equal. For this reason, when nanoholes start growing from the position of each vertex of the regular hexagon, even though they are convex, nanoholes begin to grow from the center of the regular hexagon and are regularly ordered as the nanohole grows. The nanoholes are aligned at the apex position of the equilateral triangle. Thus, the formation of nanoholes by anodic oxidation has a self-repairing action, and according to the present embodiment, nanoholes arranged at intervals shorter than the interval of the recesses can be formed using this self-repairing action. it can.

  As described above, according to the method for manufacturing a nanohole structure according to the present embodiment, the nanohole structure can be manufactured without using dry etching that is necessary in conventional nanoimprint lithography. Compared with semiconductor processing techniques such as electron beam drawing, a large-area nanohole structure can be manufactured in a much shorter time and at a lower cost.

  Next, a method for manufacturing a nanohole structure according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a diagram illustrating a manufacturing process of a nanohole structure according to a first embodiment of the present invention. 2A and 2B are views showing a mold used in the method for manufacturing a nanohole structure according to the first embodiment of the present invention, wherein FIG. 2A is a sectional view thereof and FIG. 2B is a plan view of a pressing surface.

  First, as shown in FIG. 1A, an aluminum (Al) film 4 to be processed was formed on the surface of a silicon (Si) substrate 2 by a sputtering method or the like. The workpiece is a material capable of forming nanoholes by anodic oxidation, and a material mainly composed of aluminum such as aluminum or an alloy thereof is suitable. The surface of the Al film 4 is desirably flat to the extent that a regular uneven structure can be formed. As the substrate 2, a glass substrate, a silicon (Si) substrate, or the like can be used depending on the application. In this embodiment, the Al film 4 is formed on the Si substrate 2 by sputtering. The formation of the Al film 4 is not limited to the sputtering method, and other methods such as a vapor deposition method, a CVD method, and a plating method can also be used.

  Next, a resist 6 was applied on the Al film 4 as shown in FIG. The surface of the Al film 4 needs to be cleaned to such an extent that the resist 6 can be applied with a uniform thickness. In this embodiment, PMMA is used as the resist 6, but other resists such as ZEP may be used. The resist 6 can be applied by spin coating, and the film thickness of the resist 6 can be controlled by the number of rotations. The film thickness of the resist 6 was determined according to the height of the protrusion 8a of the mold 8 which is a pressing die to be used. Since the height of the protrusion 8a of the mold 8 used in this example is 50 nm, the film thickness of the resist 6 is 30 nm so that the protrusion 8a of the mold 8 penetrates the resist 6 and reaches the Al film 4. It was.

  The pressing 8b surface of the mold 8 used for imprint (pattern transfer) was produced by, for example, an electron beam drawing method. On the pressing surface 8b of the mold 8, as shown in FIG. 2, columnar protrusions 8a having a height of 50 nm are arranged in a regular triangular lattice shape (hexagonal close-packed lattice shape) at intervals of 100 nm. The mold 8 configured in this manner was pressed against the resist 6 at a high temperature of about 120 ° C., for example, with a pressing force of 40 bar. As a result, as shown in FIG. 1C, the pattern formed by the protrusions 8 a of the mold 8 was transferred to the resist 6. When the pattern was transferred, an opening 6a was formed in the resist 6 at a position corresponding to the protrusion 8a. Since the protrusion 8a has a height that penetrates the resist 6, the surface of the Al film 4 is exposed at the bottom of the opening 6a.

  The pattern transfer described above is performed by penetrating the resist 6 and pressing the mold 8 against the Al film 4 to displace the resist 6, so that the resist 6 remains slightly at the bottom of the opening 6a, and the surface of the Al film 4 is It may not be completely exposed. Therefore, after the imprinting is completed, plasma etching such as oxygen plasma etching is performed on the surface of the Al film 4 to remove the resist 6 remaining at the bottom of the opening 6a, so that the surface of the Al film 4 is completely exposed. It is preferable. In this case, since only a small amount of the resist 6 is removed, plasma etching may be performed in a short time, and the amount of the resist 6 around the opening 6a is very small, which is not a problem. Further, this plasma etching is performed to remove a small amount of the remaining resist 6, and plasma etching is not used to form the opening 6a. Therefore, nanoholes are formed using dry etching. It does not mean that.

  Next, as shown in FIG. 1D, aluminum (Al), which is the same material as the Al film 4, was deposited on the resist 6 by sputtering using the resist 6 after pattern transfer as a mask. At this time, Al was deposited on the surface of the Al film 4 exposed in the opening 6a to form an Al deposited portion 10A, and simultaneously deposited on the surface of the resist 6 to form an Al deposited portion 10B. The Al deposited portions 10A and 10B are Al thin films.

  The height of the Al deposited portion 10A formed in the opening 6a is set to a level sufficient to induce ordering of the nanohole arrangement in the anodizing step (nanohole forming step) shown in FIG. 1), and the height of the resist 6 needs to be sufficiently lower so that the resist 6 can be lifted off as shown in FIG. In this example, the thickness of the resist 6 (that is, the depth of the opening 6a) was 30 nm, and the height (thickness) of the Al deposition portion 10A was 20 nm. Therefore, the inner wall of the opening 6a was exposed by 10 nm on the Al deposited portion 10A.

  When the deposition of Al was completed, a lift-off process was subsequently performed. In the lift-off process, the resist 6 was dissolved by ultrasonic cleaning using a solvent such as acetone, ethanol, or IPA. As described above, since the inner wall of the opening 6a, that is, the resist 6 is exposed by 10 nm above the Al deposited portion 10A, the solvent can be brought into contact with the resist 6 and the resist 6 can be dissolved. Further, at the same time as the resist 6 on the Al film 4 is removed, the Al deposited portion 10B formed by depositing Al on the resist 6 is also peeled off and removed together with the resist 6. Accordingly, when the lift-off process is performed, as shown in FIG. 1E, a concavo-convex structure in which Al deposited portions 10A are arranged in a triangular lattice pattern with a spacing of 100 nm as columnar convex portions is formed on the surface of the Al film 4. It was done.

  Subsequently, the Al film 4 is anodized by applying a predetermined anodic oxidation voltage (for example, 24 V) while immersing the Al film 4 in an oxidizing agent (for example, in a 0.3 M sulfuric acid solution). 4 was changed to Al anodized film 4a. Thereby, as shown in FIG.1 (f), many nanoholes 12 were formed in Al anodic oxide film 4a. At this time, the nanohole 12 starts growing from a position at an equal distance from the Al deposited portion 10A, which is a convex portion formed at the apex position of the equilateral triangle, that is, from the position of the center of the equilateral triangle, and in the Al anodized film 4a. I grew up. In addition, the nanoholes 12 grew from the position of the Al deposited portion 10A, which is a convex portion, by the self-repairing action described above.

  In this embodiment, since the Al deposited portions 10A, which are convex portions, are arranged in a triangular lattice pattern with an interval of 100 nm on the surface of the Al film 4, the interval between the formed nanoholes 12 is the same as that of the Al deposited portion 10A. The distance was 1 / √3 of the center distance. Since the interval between the Al deposited portions 10A is equal to the interval between the protrusions 8a of the mold 8, the interval between the formed nanoholes 12 is 1 / √3 of the interval between the centers of the protrusions 8a of the mold 8, and 100 ÷ √3. ≈58 nm. As described above, according to the present example, nanoholes arranged at an interval narrower than the interval between the openings 6 a formed in the resist 6 or the interval between the protrusions 8 a formed in the mold 8 could be formed.

  Next, a method for manufacturing a nanohole structure according to a second embodiment of the present invention will be described with reference to FIGS. 3A and 3B are views showing a mold used in the method for manufacturing a nanohole structure according to the second embodiment of the present invention, in which FIG. 3A is a sectional view thereof and FIG. 3B is a plan view of a pressing surface. FIG. 4 is a diagram illustrating a manufacturing process of a nanohole structure according to a second embodiment of the present invention.

  In this embodiment, as shown in FIG. 3, a mold 14 is used in which cylindrical recesses 14a having a height of 50 nm are arranged in a triangular lattice pattern with an interval of 100 nm. Since the preparation of the Al film 4 and the application of the resist 6 are the same as those in the first embodiment, the description thereof will be omitted.

  In this embodiment, the pattern in the resist 6 after imprinting (after pattern transfer by the mold 14) is as shown in FIG. That is, the mold 14 shown in FIG. 3 was pressed against the resist 6, and the pattern formed by the concave portions 14a of the mold 14 was transferred to the resist 6 as shown in FIG. When the pattern was transferred, convex portions 6b were formed on the resist 6 at positions corresponding to the concave portions 14a. Since the concave portion 14a is formed deeper than the thickness of the resist 6, the surface of the Al film 4 is exposed around the convex portion 6b.

  As in the first embodiment, the resist 6 slightly remaining on the surface of the Al film 4 may be removed by oxygen plasma etching or the like.

  Next, as shown in FIG. 4B, using the resist 6 after pattern transfer as a mask, aluminum (Al) of the same material as the Al film 4 is sputtered on the resist 6 and the exposed Al film 4. Deposited on the surface. At this time, Al was deposited on the exposed surface of the Al film 4 to form an Al deposited portion 10A, and simultaneously deposited on the surface of the resist 6 to form an Al deposited portion 10B. The Al deposited portions 10A and 10B are Al thin films.

  The height of the Al deposited portion 10A formed around the convex portion 6b of the resist 6 is sufficient to induce ordering of the nanohole arrangement in the anodizing step (nanohole forming step) shown in FIG. It is necessary that the height of the projection 6b of the resist 6 be sufficiently lower than the height of the projection 6b so that the resist 6 can be lifted off as shown in FIG. In this example, the height of the convex portion 6b of the resist 6 was 30 nm, and the height of the Al deposited portion 10A was 20 nm. Therefore, the side wall of the convex portion 6b is exposed by 10 nm on the Al deposited portion 10A.

  When the deposition of Al was completed, a lift-off process was subsequently performed. In the lift-off process, the resist 6 was dissolved by ultrasonic cleaning using a solvent such as acetone, ethanol, or IPA. As described above, since the side wall of the convex portion 6b of the resist 6 is exposed above the Al deposition portion 10A by 10 nm, the solvent can be brought into contact with the resist 6 and the resist 6 can be dissolved. At the same time as the resist 6 on the Al film 4 is removed, the Al deposited portion 10B formed by depositing Al on the resist 6 convex portion 6b is also peeled off and removed together with the resist 6. Therefore, when the lift-off process is performed, as shown in FIG. 4C, cylindrical recesses 16 are arranged in a triangular lattice pattern with an interval of 100 nm on the surface of the Al deposition portion 10A formed on the surface of the Al film 4. An uneven structure was formed.

  Subsequently, the Al film 4 is anodized by applying a predetermined anodic oxidation voltage (for example, 40 V) while the Al film 4 is immersed in an oxidizing agent (for example, in a 0.3 M oxalic acid solution). The film 4 was changed to an Al anodic oxide film 4a. Thereby, as shown in FIG.4 (d), many nanoholes 12 were formed in Al anodized film 4a. At this time, the nanohole 12 started to grow from the center position of the recess 16 formed at the apex position of the equilateral triangle, and grew in the Al anodized film 4a.

  In the present embodiment, since the recesses 16 formed by the Al deposition part 10A are arranged on the surface of the Al film 4 in a triangular lattice pattern with an interval of 100 nm, which is equal to the interval of the recesses 14a of the mold 14. The distance between the nanoholes 12 was 100 nm, which is the distance between the centers of the recesses 16. The interval between the recesses was 58 nm in the first embodiment described above, and the corresponding anodization voltage was 24 V. However, in this example, the interval between the recesses was as large as 100 nm, so the anodization voltage was 40 V. there were. According to this example, nanoholes arranged at intervals equal to the interval between the recesses 16 formed in the resist 6 or the interval between the recesses 14a formed in the mold 14 could be formed.

  As described above, the method for producing a nanohole structure according to the present invention includes the step 1 of forming a regular nanoarray pattern by forming a portion penetrating to the workpiece surface in the resist on the workpiece, Further, a thin film or the like of the workpiece is further formed to fill the penetration portion of the regular nano-array pattern of the resist with the workpiece having a height lower than the resist height, and the resist and Step 3 for removing the thin film formed thereon, and Step 4 for forming ordered nanoholes reflecting the regular nanoarray pattern by subsequently anodizing the workpiece. Yes.

  Moreover, it is preferable to use what is called nanoimprinting method which presses a mold to a resist and forms a regular nano array pattern in the above-mentioned process 1. Further, in the above-mentioned step 1, after using a so-called nanoimprinting method in which a mold is pressed against the resist to form a regular nano-array pattern, a part of the remaining resist is further removed by oxygen plasma or the like, whereby the surface of the workpiece It is preferable to widen the penetration site. Further, the mold may have a regular nano-array pattern with an interval of 200 nm or less produced by electron beam exposure. Step 1 described above may be a step of forming a regular nanoarray pattern by a step of exposing a resist and a step of developing.

  Further, in the above-described step 2, thin film formation of the workpiece may be performed by a sputtering method. Or in the above-mentioned process 2, thin film formation of a work piece may be performed by a vapor deposition method. Further, in the above-described step 2, the thin film of the workpiece may be formed by a CVD method. Further, in step 2 described above, filling of the workpiece through the resist penetration site may be performed by an electrodeposition method.

  Moreover, it is preferable that the regular nano-array pattern by a resist is a repetition of a triangular lattice pattern. The regular nano-array pattern by resist may be a repeating triangular lattice pattern, and the nano-hole array pattern period obtained in step 4 may be 1 / √3 of the triangular lattice pattern period. The workpiece is preferably a thin film containing Al as a main component.

  Furthermore, various devices can be easily manufactured using the nanohole structure manufactured by the manufacturing method according to the present invention. For example, a magnetic recording medium can be configured by embedding a ferromagnetic material in a nanohole of a nanohole structure manufactured by the manufacturing method according to the present invention. In addition, a photonic device can be configured by embedding a material having a dielectric constant different from that of the material of the workpiece into the nanohole of the nanohole structure manufactured by the manufacturing method according to the present invention. Alternatively, the light emitting device can be configured by embedding a light emitting material in the nanohole of the nanohole structure manufactured by the manufacturing method according to the present invention. Alternatively, it is possible to configure a resistance change memory in which a resistance change material can be controlled by embedding a resistance change material in a nanohole of a nanohole structure manufactured by the manufacturing method according to the present invention. In addition, a phase change memory can be configured in which a phase change material is embedded in a nanohole of a nanohole structure manufactured by the manufacturing method according to the present invention so that the phase can be controlled. Furthermore, an electron emission device can be formed by forming an electron emission portion in the nanohole of the nanohole structure manufactured by the manufacturing method according to the present invention.

  As described above, the present specification discloses the following invention.

(Appendix 1)
A method for producing a nanohole structure in which a plurality of nanoholes are formed,
In the resist provided on the workpiece, a plurality of openings penetrating to the surface of the workpiece in a regular arrangement pattern are formed,
Depositing the same material as the workpiece in the opening using the resist as a mask, forming a convex portion having a thickness smaller than the depth of the opening,
Removing the resist on the workpiece, thereby removing deposits on the resist;
The method of manufacturing a nanohole structure, wherein the workpiece is anodized to form the plurality of nanoholes in a state where the convex portion remains on the surface of the workpiece.

(Appendix 2)
A method for producing a nanohole structure according to appendix 1, wherein
The method of manufacturing a nanohole structure, wherein the workpiece is made of a material mainly composed of aluminum.

(Appendix 3)
A method for producing a nanohole structure according to appendix 1, wherein
The method for producing a nanohole structure, wherein the array pattern is a triangular lattice pattern composed of repeating triangles.

(Appendix 4)
A method for producing a nanohole structure according to attachment 3, wherein
A method of manufacturing a nanohole structure, wherein the array pattern is a triangular lattice pattern composed of repeating regular triangles, and the array pattern period of the formed nanoholes is 1 / √3 of the triangular lattice pattern period.

(Appendix 5)
A method for producing a nanohole structure according to appendix 1, wherein
A method of manufacturing a nanohole structure, comprising: pressing a pressing die having protrusions corresponding to the plurality of openings to the resist on the workpiece to form the openings in the resist.

(Appendix 6)
A method for producing a nanohole structure according to appendix 5,
After forming the opening, the resist remaining in the opening is removed by plasma etching.

(Appendix 7)
A method for producing a nanohole structure according to appendix 5,
The method for producing a nanohole structure, wherein the protrusions of the pressing mold are formed with an array pattern having an interval of 200 nm or less by electron beam exposure.

(Appendix 8)
A method for producing a nanohole structure according to appendix 1, wherein
A method for producing a nanohole structure, wherein the resist is exposed and developed to form the openings in the array pattern.

(Appendix 9)
A method for producing a nanohole structure according to appendix 1, wherein
A method for producing a nanohole structure, wherein the thin film is formed by any one of a sputtering method, a vapor deposition method, a CVD method, and a plating method.

(Appendix 10)
A nanohole structure manufactured using the method for manufacturing a nanohole structure according to any one of appendices 1 to 10.

(Appendix 11)
A magnetic recording medium comprising a nanohole embedded in a nanohole structure according to appendix 10 and embedded with a ferromagnetic material.

(Appendix 12)
A photonic device comprising: a nanohole having a dielectric constant different from that of the workpiece in a nanohole of the nanohole structure according to appendix 10.

(Appendix 13)
A light emitting device comprising a light emitting material embedded in a nanohole of the nanohole structure according to attachment 10.

(Appendix 14)
A resistance change memory characterized in that a resistance change material is embedded in a nanohole of the nanohole structure according to appendix 10, and the conduction characteristics can be controlled.

(Appendix 15)
A phase change memory characterized in that a phase change material is embedded in a nanohole of the nanohole structure according to appendix 10 to enable phase control.

(Appendix 16)
An electron emission device, wherein an electron emission portion is formed in a nanohole of the nanohole structure according to attachment 10.

It is a figure which shows the manufacture process of the nanohole structure by 1st Example of this invention. It is a figure which shows the mold shown in FIG. 1, (a) is the sectional drawing, (b) is a top view of a pressing surface. It is a figure which shows the mold used for the manufacturing method of the nanohole structure by 2nd Example of this invention, (a) is the sectional drawing, (b) is a top view of a pressing surface. It is a figure which shows the manufacture process of the nanohole structure by 2nd Example of this invention.

Explanation of symbols

2 Si substrate 4 Al film 4a Al anodized film 6 Resist 6a Opening 6b Protruding part 8 Mold 8a Protruding part 8b Pressing surface 10A, 10B Al deposited part (Al thin film)
12 Nanohole 14 Mold 14a Concave 14b Pressing surface 16 Concave

Claims (5)

A method for producing a nanohole structure in which a plurality of nanoholes are formed,
In the resist provided on the workpiece, a plurality of openings penetrating to the surface of the workpiece in a regular arrangement pattern are formed,
Depositing the same material as the workpiece in the opening using the resist as a mask, forming a convex portion having a thickness smaller than the depth of the opening,
Removing the resist on the workpiece, thereby removing deposits on the resist;
The method of manufacturing a nanohole structure, wherein the workpiece is anodized to form the plurality of nanoholes in a state where the convex portion remains on the surface of the workpiece. A method for producing a nanohole structure according to claim 1,
The method of manufacturing a nanohole structure, wherein the workpiece is made of a material mainly composed of aluminum. A method for producing a nanohole structure according to claim 1 or 2,
A method of manufacturing a nanohole structure, wherein the array pattern is a triangular lattice pattern composed of repeating regular triangles, and the array pattern period of the formed nanoholes is 1 / √3 of the triangular lattice pattern period. A method for producing a nanohole structure according to any one of claims 1 to 3,
A method of manufacturing a nanohole structure, comprising: pressing a pressing die having protrusions corresponding to the plurality of openings to the resist on the workpiece to form the openings in the resist. A method for producing a nanohole structure according to any one of claims 1 to 4,
After forming the opening, the resist remaining in the opening is removed by plasma etching.

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