JP2007114431A - Positive radiation-sensitive resin composition - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a chemically amplified positive radiation-sensitive resin composition that is superior in roughness, etching resistance, sensitivity and resolution, capable of stably forming a fine pattern with high accuracy, and suitable for use as a resin composition for EB or EUV, effectively sensitive to an electron beam or extreme-ultraviolet radiation. <P>SOLUTION: The positive radiation-sensitive resin composition contains a radiation-sensitive acid generator (A), capable of generating an acid upon irradiation with radiation, an acid-dissociable group-containing resin (B) which is alkali-insoluble or slightly alkali-soluble and becomes readily alkali-soluble by the action of an acid; an acid propagator (C) capable of generating an acid in a chain reaction by the action of an acid; and a photosensitive basic compound (D), which loses its basicity upon irradiation with radiation, wherein the acid propagator (C) is a compound, having a sulfonate group represented by Formula (1) on a carbon-ring skeleton. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a positive-type radiation-sensitive resin composition suitable for fine processing. In particular, the present invention relates to a positive-type radiation-sensitive resin composition suitable for forming a fine pattern using an electron beam (hereinafter abbreviated as EB) or extreme ultraviolet rays (hereinafter abbreviated as EUV).

  In the field of microfabrication represented by the manufacture of integrated circuit elements, in order to obtain a higher degree of integration of integrated circuits, miniaturization of design rules in lithography is progressing rapidly, and microfabrication is performed stably. The development of lithography processes that can do this is strongly promoted. However, since it is difficult to form a fine pattern of 100 nm or less with high accuracy by the conventional method using KrF or ArF excimer laser, a method using EB or EUV has been proposed.

Various types of radiation-sensitive resin compositions used as such positive resist materials for electron beams or extreme ultraviolet rays used in such ultrafine processing have been proposed.
(1) A methacrylic main chain-cutting radiation sensitive resin composition such as PMMA (polymethyl methacrylate):
Although the resolution is excellent, there are problems in etching resistance and sensitivity, and it is difficult to put it to practical use. Poly t-butyl α-chloromethylstyrene (see Patent Document 1) having a good balance between resolution and sensitivity, and patent application (see Patent Document 2) in which atoms (N, O, S) that are easily cut by an electron beam are introduced at the resin terminal ) Has been. However, although improvement in sensitivity is recognized, sensitivity and etching resistance have not reached a practical level.
(2) Chemically amplified radiation-sensitive resin composition having polyhydroxystyrene resin (resin for KrF excimer) and novolak (resin for i-line) partially protected with an acid-dissociable functional group and an acid generator:
Excellent balance of sensitivity, resolution and etching resistance, partially acetal protected polyhydroxystyrene resin + acid generator (see Patent Document 3), various acid dissociable partially protected polyhydroxystyrene resins + fluorine-containing aromatic sulfonic acid generated onium salt + Fluorine-based or silicon-based surfactant (see Patent Document 4), onium salt having at least one electron-withdrawing group (F, cyano group, nitro group) as a cation moiety substituent (see Patent Document 5), disulfonyl group Various patents have been filed, such as a resin having an N-oxyimide sulfonyl group (see Patent Document 7), and the like. However, the film surface roughness (hereinafter referred to as roughness), sensitivity, and resolution at the time of forming a fine pattern has not reached a practical level.

On the other hand, a thermochemical reaction is caused by the catalytic action of the acid generated by the photochemical reaction, thereby newly adding a compound that spontaneously generates an acid and proliferates the acid in a self-catalytic manner to the radiation-sensitive resin composition. It is known that the sensitivity can be improved (see Patent Document 9).
In addition, in order to stabilize the latent image at the time of irradiation, a photosensitive basic compound that decomposes efficiently into a corresponding neutral fragment when exposed to light but remains in an unexposed area as it is. It is known (see Patent Document 10 and Non-Patent Document 1). However, the blending of the radiation-sensitive resin composition or the photosensitive basic compound alone has not reached a practical level that is excellent in roughness, etching resistance, sensitivity, and resolution, and can form a fine pattern with high accuracy and stability.

JP 2000-147777 A JP 11-29612 A JP-A-6-194842 JP 2000-187330 A JP 2001-075283 A JP 2002-072483 A JP 2002-107920 A JP 2004-117959 A JP 2000-35665 A Special table 2003-524799 gazette J. et al. Photopolym. Sci & Tech. Vol. 8, P.I. 543-553 (1995)

The present invention has been made in order to address the above-mentioned problems. An acid proliferating agent capable of propagating the acid in the exposed portion in order to improve sensitivity, and a photosensitive basic compound capable of effectively utilizing the acid in the exposed portion. It is an object of the present invention to provide a positive-type radiation-sensitive resin composition that is excellent in roughness, etching resistance, sensitivity, and resolution, and that can form a fine pattern with high accuracy and stability.
A further object of the present invention is to provide a chemically amplified positive radiation sensitive resin composition suitable for EB and EUV that is effectively sensitive to electron beams or extreme ultraviolet rays.

式（１）において、Ｒ¹は１価の有機基を表す。
また、本発明のポジ型感放射線性樹脂組成物において、上記感光性塩基性化合物（Ｄ）が下記式（２）で表される化合物であることを特徴とする。

式（２）において、Ｍ^＋は置換基を有してもよいヨードニウム化合物もしくはスルホニウム化合物を、Ｘ⁻はＯＨ⁻、Ｒ²‐ＯＨ⁻、Ｒ²‐ＣＯＯ⁻（Ｒ²は１価の有機基)を、それぞれ表す。 The positive-type radiation-sensitive resin composition of the present invention comprises a radiation-sensitive acid generator (hereinafter referred to as an acid generator) (A) that generates an acid when irradiated with radiation, and is alkali-insoluble or alkali-insoluble. An acid-dissociable group-containing resin (B) that becomes readily soluble in alkali by the action of an acid, an acid proliferating agent (C) that emits an acid in a chain reaction by the action of an acid, and basic by irradiation with radiation. And a photosensitive basic compound (D) that loses water.
In the positive radiation sensitive resin composition of the present invention, the acid proliferating agent (C) is a compound having a sulfonate group represented by the following formula (1) on the carbocyclic skeleton.

In the formula (1), R ¹ represents a monovalent organic group.
In the positive radiation sensitive resin composition of the present invention, the photosensitive basic compound (D) is a compound represented by the following formula (2).

In the formula (2), M ⁺ represents an iodonium compound or sulfonium compound which may have a substituent, X ⁻ represents OH ⁻ , R ² —OH ⁻ , R ² —COO ⁻ (R ² represents a monovalent organic group) ) Respectively.

  The positive radiation sensitive resin composition of the present invention comprises the acid generator (A), the acid dissociable group-containing resin (B), the acid proliferating agent (C), and the photosensitive basic compound ( In combination with D), the sensitivity due to the generation of a large amount of acid by the acid proliferating agent (C) is improved, and the acid in the exposed area can be effectively utilized by the photosensitive basic compound. As a result, a positive-type radiation-sensitive resin composition capable of dramatically improving not only sensitivity but also resolution and line edge roughness can be obtained.

式（３）において、Ｒ³はアルキレン基、アリーレン基、アルコキシレン基等の２価の基を示し、Ｒ⁴はアルキル基、アリール基、ハロゲン置換アルキル基、ハロゲン置換アリール基等の１価の基を表す。 Hereinafter, embodiments of the present invention will be described in detail.
Acid generator (A)
Examples of the acid generator (A) that can be used in the present invention include sulfonimide compounds, onium salt compounds, sulfone compounds, sulfonate ester compounds, disulfonyldiazomethane compounds, disulfonylmethane compounds, oxime sulfonate compounds, and hydrazine sulfonate compounds. Can do. The acid generator (A) can be used as a single acid generator or a mixed acid generator.
As a sulfonimide compound, the compound represented by following formula (3) can be mentioned, for example.

In the formula (3), R ³ represents a divalent group such as an alkylene group, an arylene group, or an alkoxylen group, and R ⁴ represents a monovalent group such as an alkyl group, an aryl group, a halogen-substituted alkyl group, or a halogen-substituted aryl group. Represents a group.

Specific examples of the sulfonimide compound include N- (trifluoromethanesulfonyloxy) succinimide, N- (trifluoromethanesulfonyloxy) phthalimide, N- (trifluoromethanesulfonyloxy) diphenylmaleimide, N- (trifluoromethanesulfonyloxy) bicyclo [ 2.2.1] Hept-5-ene-2,3-dicarboximide, N- (trifluoromethanesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3- Dicarboximide, N- (trifluoromethanesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (trifluoromethanesulfonyloxy) naphthylimide;
N- (10-camphorsulfonyloxy) succinimide, N- (10-camphorsulfonyloxy) phthalimide, N- (10-camphorsulfonyloxy) diphenylmaleimide, N- (10-camphorsulfonyloxy) bicyclo [2.2.1 ] Hept-5-ene-2,3-dicarboximide, N- (10-camphorsulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (10-camphorsulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (10-camphorsulfonyloxy) naphthylimide, N-[(5 -Methyl-5-carboxymethylbicyclo [2.2.1] heptan-2-yl) sulfonylo Shea] succinimide;

N- (n-octanesulfonyloxy) succinimide, N- (n-octanesulfonyloxy) phthalimide, N- (n-octanesulfonyloxy) diphenylmaleimide, N- (n-octanesulfonyloxy) bicyclo [2.2.1 ] Hept-5-ene-2,3-dicarboximide, N- (n-octanesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (n-octanesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (n-octanesulfonyloxy) naphthylimide;
N- (p-toluenesulfonyloxy) succinimide, N- (p-toluenesulfonyloxy) phthalimide, N- (p-toluenesulfonyloxy) diphenylmaleimide, N- (p-toluenesulfonyloxy) bicyclo [2.2.1 ] Hept-5-ene-2,3-dicarboximide, N- (p-toluenesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (p-toluenesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (p-toluenesulfonyloxy) naphthylimide;

N- (2-trifluoromethylbenzenesulfonyloxy) succinimide, N- (2-trifluoromethylbenzenesulfonyloxy) phthalimide, N- (2-trifluoromethylbenzenesulfonyloxy) diphenylmaleimide, N- (2-trifluoro Methylbenzenesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (2-trifluoromethylbenzenesulfonyloxy) -7-oxabicyclo [2.2.1 ] Hept-5-ene-2,3-dicarboximide, N- (2-trifluoromethylbenzenesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide N- (2-trifluoromethylbenzenesulfonyloxy) naphthylimi ;
N- (4-trifluoromethylbenzenesulfonyloxy) succinimide, N- (4-trifluoromethylbenzenesulfonyloxy) phthalimide, N- (4-trifluoromethylbenzenesulfonyloxy) diphenylmaleimide, N- (4-trifluoro Methylbenzenesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (4-trifluoromethylbenzenesulfonyloxy) -7-oxabicyclo [2.2.1 ] Hept-5-ene-2,3-dicarboximide, N- (4-trifluoromethylbenzenesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide N- (4-Trifluoromethylbenzenesulfonyloxy) naphthylimi ;

N- (perfluorobenzenesulfonyloxy) succinimide, N- (perfluorobenzenesulfonyloxy) phthalimide, N- (perfluorobenzenesulfonyloxy) diphenylmaleimide, N- (perfluorobenzenesulfonyloxy) bicyclo [2.2.1] ] Hept-5-ene-2,3-dicarboximide, N- (perfluorobenzenesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (perfluorobenzenesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (perfluorobenzenesulfonyloxy) naphthylimide;
N- (1-naphthalenesulfonyloxy) succinimide, N- (1-naphthalenesulfonyloxy) phthalimide, N- (1-naphthalenesulfonyloxy) diphenylmaleimide, N- (1-naphthalenesulfonyloxy) bicyclo [2.2.1] ] Hept-5-ene-2,3-dicarboximide, N- (1-naphthalenesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (1-naphthalenesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (1-naphthalenesulfonyloxy) naphthylimide;

N- (nonafluoro-n-butanesulfonyloxy) succinimide, N- (nonafluoro-n-butanesulfonyloxy) phthalimide, N- (nonafluoro-n-butanesulfonyloxy) diphenylmaleimide, N- (nonafluoro-n-butanesulfonyloxy) ) Bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (nonafluoro-n-butanesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5 Ene-2,3-dicarboximide, N- (nonafluoro-n-butanesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (nonafluoro- n-butanesulfonyloxy) naphthylimide;
N- (perfluoro-n-octanesulfonyloxy) succinimide, N- (perfluoro-n-octanesulfonyloxy) phthalimide, N- (perfluoro-n-octanesulfonyloxy) diphenylmaleimide, N- (perfluoro-n -Octanesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (perfluoro-n-octanesulfonyloxy) -7-oxabicyclo [2.2.1 ] Hept-5-ene-2,3-dicarboximide, N- (perfluoro-n-octanesulfonyloxy) bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboximide N- (perfluoro-n-octanesulfonyloxy) naphthylimide;

  N- (benzenesulfonyloxy) succinimide, N- (benzenesulfonyloxy) phthalimide, N- (benzenesulfonyloxy) diphenylmaleimide, N- (benzenesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2 , 3-dicarboximide, N- (benzenesulfonyloxy) -7-oxabicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (benzenesulfonyloxy) bicyclo [2 2.1] heptane-5,6-oxy-2,3-dicarboximide, N- (benzenesulfonyloxy) naphthylimide and the like.

Among these sulfonimide compounds, N- (trifluoromethanesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (10-camphorsulfonyloxy) succinimide, N -(P-toluenesulfonyloxy) succinimide, N- (nonafluoro-n-butanesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (benzenesulfonyloxy) Bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N-[(5-methyl-5-carboxymethylbicyclo [2.2.1] heptan-2-yl) sulfonyloxy Succinimide and the like are preferable.
In this invention, a sulfonimide compound can be used individually or in mixture of 2 or more types.

Examples of the onium salt compounds that can be used in the present invention include sulfonium salts, iodonium salts, phosphonium salts, diazonium salts, ammonium salts, pyridinium salts, and the like. Among these, preferred onium salt compounds include sulfonium salts and iodonium salt compounds.
As a specific example of the onium salt compound,
Triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium nonafluoro-n-butanesulfonate, triphenylsulfonium perfluoro-n-octanesulfonate, triphenylsulfonium pyrenesulfonate, triphenylsulfonium n-dodecylbenzenesulfonate, triphenylsulfonium p-toluene Sulfonate, triphenylsulfonium benzene sulfonate, triphenylsulfonium 10-camphor sulfonate, triphenylsulfonium n-octane sulfonate, triphenylsulfonium 2-trifluoromethylbenzene sulfonate, triphenylsulfonium 4-trifluoromethylbenzene sulfonate, triphenylsulfonium hexasulfonate Fluoroantimo Chromatography, tri triphenylsulfonium naphthalenesulfonate, triphenylsulfonium perfluoro sulfonate;
(4-t-butylphenyl) diphenylsulfonium trifluoromethanesulfonate, (4-t-butylphenyl) diphenylsulfonium nonafluoro-n-butanesulfonate, (4-t-butylphenyl) diphenylsulfonium perfluoro-n-octanesulfonate, (4-t-butylphenyl) diphenylsulfonium pyrenesulfonate, (4-t-butylphenyl) diphenylsulfonium n-dodecylbenzenesulfonate, (4-t-butylphenyl) diphenylsulfonium p-toluenesulfonate, (4-t-butyl) Phenyl) diphenylsulfonium benzenesulfonate, (4-t-butylphenyl) diphenylsulfonium 10-camphorsulfonate, (4-t-butylphenyl) diphenylsulfate Ni-n-octanesulfonate, (4-t-butylphenyl) diphenylsulfonium 2-trifluoromethylbenzenesulfonate, (4-t-butylphenyl) diphenylsulfonium 4-trifluoromethanebenzenesulfonate, (4-t-butylphenyl) diphenyl Sulfonium perfluorobenzene sulfonate;

(4-t-butoxyphenyl) diphenylsulfonium trifluoromethanesulfonate, (4-t-butoxyphenyl) diphenylsulfonium nonafluoro-n-butanesulfonate, (4-t-butoxyphenyl) diphenylsulfonium perfluoro-n-octanesulfonate, (4-t-butoxyphenyl) diphenylsulfonium pyrenesulfonate, (4-t-butoxyphenyl) diphenylsulfonium n-dodecylbenzenesulfonate, (4-t-butoxyphenyl) diphenylsulfonium p-toluenesulfonate, (4-t-butoxy Phenyl) diphenylsulfonium benzenesulfonate, (4-t-butoxyphenyl) diphenylsulfonium 10-camphorsulfonate, (4-t-butoxypheny ) Diphenylsulfonium n-octanesulfonate, (4-t-butoxyphenyl) diphenylsulfonium 2-trifluoromethylbenzenesulfonate, (4-t-butoxyphenyl) diphenylsulfonium 4-trifluoromethylbenzenesulfonate, (4-t-butoxy) Phenyl) diphenylsulfonium perfluorobenzenesulfonate;
(4-hydroxyphenyl) diphenylsulfonium trifluoromethanesulfonate, (4-hydroxyphenyl) diphenylsulfonium nonafluoro-n-butanesulfonate, (4-hydroxyphenyl) diphenylsulfonium perfluoro-n-octanesulfonate, (4-hydroxyphenyl) Diphenylsulfonium pyrenesulfonate, (4-hydroxyphenyl) diphenylsulfonium n-dodecylbenzenesulfonate, (4-hydroxyphenyl) diphenylsulfonium p-toluenesulfonate, (4-hydroxyphenyl) diphenylsulfoniumbenzenesulfonate, (4-hydroxyphenyl) diphenyl Sulfonium 10-camphorsulfonate, (4-hydroxyphenyl) diphenylsulfate Ni-n-octanesulfonate, (4-hydroxyphenyl) diphenylsulfonium 2-trifluoromethylbenzenesulfonate, (4-hydroxyphenyl) diphenylsulfonium 4-trifluoromethylbenzenesulfonate, (4-hydroxyphenyl) diphenylsulfonium perfluorobenzenesulfonate ;

Tris (4-methoxyphenyl) sulfonium trifluoromethanesulfonate, tris (4-methoxyphenyl) sulfonium nonafluoro-n-butanesulfonate, tris (4-methoxyphenyl) sulfonium perfluoro-n-octanesulfonate, tris (4-methoxyphenyl) ) Sulfonium pyrenesulfonate, tris (4-methoxyphenyl) sulfonium n-dodecylbenzenesulfonate, tris (4-methoxyphenyl) sulfonium p-toluenesulfonate, tris (4-methoxyphenyl) sulfoniumbenzenesulfonate, tris (4-methoxyphenyl) Sulfonium 10-camphorsulfonate, tris (4-methoxyphenyl) sulfonium n-octanesulfonate, tris (4-methoxy) Eniru) sulfonium 2-trifluoromethylbenzenesulfonate, tris (4-methoxyphenyl) sulfonium 4-trifluoromethylbenzenesulfonate, tris (4-methoxyphenyl) sulfonium perfluoro sulfonate;
Bis (4-methoxyphenyl) p-toluylsulfonium trifluoromethanesulfonate, bis (4-methoxyphenyl) p-toluylsulfonium nonafluoro-n-butanesulfonate, bis (4-methoxyphenyl) p-toluylsulfonium perfluoro-n- Octanesulfonate, bis (4-methoxyphenyl) p-toluylsulfonium pyrenesulfonate, bis (4-methoxyphenyl) p-toluylsulfonium n-dodecylbenzenesulfonate, bis (4-methoxyphenyl) p-toluylsulfonium p-toluenesulfonate, Bis (4-methoxyphenyl) p-toluylsulfonium benzenesulfonate, bis (4-methoxyphenyl) p-toluylsulfonium 10-camphorsulfonate, bis (4 Methoxyphenyl) p-toluylsulfonium n-octanesulfonate, bis (4-methoxyphenyl) p-toluylsulfonium 2-trifluoromethylbenzenesulfonate, bis (4-methoxyphenyl) p-toluylsulfonium 4-trifluoromethylbenzenesulfonate, Bis (4-methoxyphenyl) p-toluylsulfonium perfluorobenzenesulfonate;

(4-fluorophenyl) diphenylsulfonium trifluoromethanesulfonate, (4-fluorophenyl) diphenylsulfonium nonafluoro-n-butanesulfonate, (4-fluorophenyl) diphenylsulfonium 10-camphorsulfonate; tris (4-fluorophenyl) sulfonium trifluoro Lomethanesulfonate, tris (4-fluorophenyl) sulfonium nonafluoro-n-butanesulfonate, tris (4-fluorophenyl) sulfonium 10-camphor sulfonate, tris (4-fluorophenyl) sulfonium p-toluenesulfonate;
2,4,6-trimethylphenyldiphenylsulfonium trifluoromethanesulfonate, 2,4,6-trimethylphenyldiphenylsulfonium 2,4-difluorobenzenesulfonate, 2,4,6-trimethylphenyldiphenylsulfonium p-toluenesulfonate, 2,4 , 6-Trimethylphenyldiphenylsulfonium 4-trifluoromethylbenzenesulfonate;

Diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-n-butanesulfonate, diphenyliodonium perfluoro-n-octanesulfonate, diphenyliodonium pyrenesulfonate, diphenyliodonium n-dodecylbenzenesulfonate, diphenyliodonium p-toluenesulfonate, diphenyliodoniumbenzenesulfonate Diphenyliodonium 10-camphorsulfonate, diphenyliodonium n-octanesulfonate, diphenyliodonium 2-trifluoromethylbenzenesulfonate, diphenyliodonium 4-trifluoromethylbenzenesulfonate, diphenyliodonium perfluorobenzenesulfonate;
Di (p-toluyl) iodonium trifluoromethanesulfonate, di (p-toluyl) iodonium nonafluoro-n-butanesulfonate, di (p-toluyl) iodonium perfluoro-n-octanesulfonate, di (p-toluyl) iodonium pyrenesulfonate Di (p-toluyl) iodonium n-dodecylbenzenesulfonate, di (p-toluyl) iodonium p-toluenesulfonate, di (p-toluyl) iodoniumbenzenesulfonate, di (p-toluyl) iodonium 10-camphorsulfonate, di (p p-toluyl) iodonium n-octanesulfonate, di (p-toluyl) iodonium 2-trifluoromethylbenzenesulfonate, di (p-toluyl) iodonium 4-trifluoromethylbenzene Zen sulfonate, di (p- tolyl) iodonium perfluoro sulfonate;

Bis (4-t-butylphenyl) iodonium trifluoromethanesulfonate, bis (4-t-butylphenyl) iodonium nonafluoro-n-butanesulfonate, bis (4-t-butylphenyl) iodonium perfluoro-n-octanesulfonate, Bis (4-t-butylphenyl) iodonium pyrenesulfonate, bis (4-t-butylphenyl) iodonium n-dodecylbenzenesulfonate, bis (4-t-butylphenyl) iodonium p-toluenesulfonate, bis (4-t- Butylphenyl) iodonium benzenesulfonate, bis (4-t-butylphenyl) iodonium 10-camphorsulfonate, bis (4-t-butylphenyl) iodonium n-octanesulfonate, bis (4-t-butyl) Enyl) iodonium 2-trifluoromethylbenzenesulfonate, bis (4-tert-butylphenyl) iodonium 4-trifluoromethylbenzenesulfonate, bis (4-tert-butylphenyl) iodonium perfluorobenzenesulfonate, bis (4-t- Butylphenyl) iodonium 2,4-difluorobenzenesulfonate;
Bis (3,4-dimethylphenyl) iodonium trifluoromethanesulfonate, bis (3,4-dimethylphenyl) iodonium nonafluoro-n-butanesulfonate, bis (3,4-dimethylphenyl) iodonium perfluoro-n-octanesulfonate, Bis (3,4-dimethylphenyl) iodonium pyrenesulfonate, bis (3,4-dimethylphenyl) iodonium n-dodecylbenzenesulfonate, bis (3,4-dimethylphenyl) iodonium p-toluenesulfonate, bis (3,4- Dimethylphenyl) iodoniumbenzenesulfonate, bis (3,4-dimethylphenyl) iodonium 10-camphorsulfonate, bis (3,4-dimethylphenyl) iodonium n-octanesulfonate, bi (3,4-dimethylphenyl) iodonium 2-trifluoromethylbenzene sulfonate, bis (3,4-dimethylphenyl) iodonium 4-trifluoromethyl benzenesulfonate, bis (3,4-dimethylphenyl) iodonium perfluoro sulfonate;

(4-nitrophenyl) phenyliodonium trifluoromethanesulfonate, (4-nitrophenyl) phenyliodonium nonafluoro-n-butanesulfonate, (4-nitrophenyl) phenyliodonium perfluoro-n-octanesulfonate, (4-nitrophenyl) Phenyliodonium pyrenesulfonate, (4-nitrophenyl) phenyliodonium n-dodecylbenzenesulfonate, (4-nitrophenyl) phenyliodonium p-toluenesulfonate, (4-nitrophenyl) phenyliodoniumbenzenesulfonate, (4-nitrophenyl) phenyl Iodonium 10-camphorsulfonate, (4-nitrophenyl) phenyliodonium n-octanesulfonate, (4-nitrophenyl) Phenyl iodonium 2-trifluoromethylbenzene sulfonate, (4-nitrophenyl) iodonium 4-trifluoromethyl benzenesulfonate, (4-nitrophenyl) iodonium perfluoro sulfonate;
Bis (3-nitrophenyl) iodonium trifluoromethanesulfonate, bis (3-nitrophenyl) iodonium nonafluoro-n-butanesulfonate, bis (3-nitrophenyl) iodonium perfluoro-n-octanesulfonate, bis (3-nitrophenyl) ) Iodonium pyrenesulfonate, bis (3-nitrophenyl) iodonium n-dodecylbenzenesulfonate, bis (3-nitrophenyl) iodonium p-toluenesulfonate, bis (3-nitrophenyl) iodoniumbenzenesulfonate, bis (3-nitrophenyl) Iodonium 10-camphorsulfonate, bis (3-nitrophenyl) iodonium n-octanesulfonate, bis (3-nitrophenyl) iodonium 2-trifluorome Le benzenesulfonate, bis (3-nitrophenyl) iodonium 4-trifluoromethyl benzenesulfonate, bis (3-nitrophenyl) iodonium perfluoro sulfonate;

(4-methoxyphenyl) phenyliodonium trifluoromethanesulfonate, (4-methoxyphenyl) phenyliodonium nonafluoro-n-butanesulfonate, (4-methoxyphenyl) phenyliodonium perfluoro-n-octanesulfonate, (4-methoxyphenyl) Phenyliodonium pyrenesulfonate, (4-methoxyphenyl) phenyliodonium n-dodecylbenzenesulfonate, (4-methoxyphenyl) phenyliodonium p-toluenesulfonate, (4-methoxyphenyl) phenyliodoniumbenzenesulfonate, (4-methoxyphenyl) phenyl Iodonium 10-camphorsulfonate, (4-methoxyphenyl) phenyliodonium n-octanesulfonate, ( - methoxyphenyl) iodonium 2-trifluoromethylbenzene sulfonate, (4-methoxyphenyl) iodonium 4-trifluoromethyl benzenesulfonate, (4-methoxyphenyl) iodonium perfluoro sulfonate;
(4-fluorophenyl) phenyliodonium trifluoromethanesulfonate, (4-fluorophenyl) phenyliodonium nonafluoro-n-butanesulfonate, (4-fluorophenyl) phenyliodonium 10-camphorsulfonate;

Bis (4-fluorophenyl) iodonium trifluoromethanesulfonate, bis (4-fluorophenyl) iodonium nonafluoro-n-butanesulfonate, bis (4-fluorophenyl) iodonium 10-camphorsulfonate;
Bis (4-chlorophenyl) iodonium trifluoromethanesulfonate, bis (4-chlorophenyl) iodonium nonafluoro-n-butanesulfonate, bis (4-chlorophenyl) iodonium perfluoro-n-octanesulfonate, bis (4-chlorophenyl) iodonium pyrenesulfonate Bis (4-chlorophenyl) iodonium n-dodecylbenzenesulfonate, bis (4-chlorophenyl) iodonium p-toluenesulfonate, bis (4-chlorophenyl) iodoniumbenzenesulfonate, bis (4-chlorophenyl) iodonium 10-camphorsulfonate, bis ( 4-chlorophenyl) iodonium n-octanesulfonate, bis (4-chlorophenyl) iodonium 2-trifluorome Le benzenesulfonate, bis (4-chlorophenyl) iodonium 4-trifluoromethyl benzenesulfonate, bis (4-chlorophenyl) iodonium perfluoro sulfonate;

Bis (4-trifluoromethylphenyl) iodonium trifluoromethanesulfonate, bis (4-trifluoromethylphenyl) iodonium nonafluoro-n-butanesulfonate, bis (4-trifluoromethylphenyl) iodonium perfluoro-n-octanesulfonate, Bis (4-trifluoromethylphenyl) iodonium pyrenesulfonate, bis (4-trifluoromethylphenyl) iodonium n-dodecylbenzenesulfonate, bis (4-trifluoromethylphenyl) iodonium p-toluenesulfonate, bis (4-trifluoro Methylphenyl) iodonium benzenesulfonate, bis (4-trifluoromethylphenyl) iodonium 10-camphorsulfonate, bis (4-trifluoromethyl) Ruphenyl) iodonium n-octanesulfonate, bis (4-trifluoromethylphenyl) iodonium 2-trifluoromethylbenzenesulfonate, bis (4-trifluoromethylphenyl) iodonium 4-trifluoromethylbenzenesulfonate, bis (4-trifluoro Methylphenyl) iodonium perfluorobenzenesulfonate;
Di (1-naphthyl) iodonium trifluoromethanesulfonate, di (1-naphthyl) iodonium nonafluoro-n-butanesulfonate, di (1-naphthyl) iodonium perfluoro-n-octanesulfonate, di (1-naphthyl) iodonium pyrenesulfonate Di (1-naphthyl) iodonium n-dodecylbenzenesulfonate, di (1-naphthyl) iodonium p-toluenesulfonate, di (1-naphthyl) iodoniumbenzenesulfonate, di (1-naphthyl) iodonium 10-camphorsulfonate, di (1 1-naphthyl) iodonium n-octanesulfonate, di (1-naphthyl) iodonium 2-trifluoromethylbenzenesulfonate, di (1-naphthyl) iodonium 4-trifluoromethylbenzene Zen sulfonate, and di (1-naphthyl) iodonium perfluoro benzene sulfonates.

Examples of the sulfone compound that can be used in the present invention include β-ketosulfone, β-sulfonylsulfone, and α-diazo compounds thereof.
Specific examples of the sulfone compound include phenacylphenylsulfone, mesitylphenacylsulfone, bis (phenylsulfonyl) methane, 4-trisphenacylsulfone, and the like.
Examples of the sulfonic acid ester compounds that can be used in the present invention include alkyl sulfonic acid esters, haloalkyl sulfonic acid esters, aryl sulfonic acid esters, and imino sulfonates.
Specific examples of the sulfonate compound include benzoin tosylate, pyrogallol tris (trifluoromethanesulfonate), pyrogallol tris (nonafluorobutanesulfonate), pyrogallol tris (methanesulfonate), nitrobenzyl-9,10-diethoxyanthracene-2 -Sulfonate, α-methylol benzoin tosylate, α-methylol benzoin trifluoromethane sulfonate, α-methylol benzoin n-octane sulfonate, α-methylol benzoin n-dodecane sulfonate and the like.

式（４）において、各Ｒ⁵は相互に独立にアルキル基、アリール基、ハロゲン置換アルキル基、ハロゲン置換アリール基等の１価の基を表す。
ジスルホニルジアゾメタン化合物の具体例としては、ビス（トリフルオロメタンスルホニル）ジアゾメタン、ビス（シクロヘキサンスルホニル）ジアゾメタン、ビス（フェニルスルホニル）ジアゾメタン、ビス（ｐ−トルエンスルホニル）ジアゾメタン、ビス（２，４−ジメチルベンゼンスルホニル）ジアゾメタン、ビス（４−ｔ−ブチルフェニルスルホニル）ジアゾメタン、ビス（４−クロロベンゼンスルホニル）ジアゾメタン、メチルスルホニル・ｐ−トルエンスルホニルジアゾメタン、シクロヘキサンスルホニル・ｐ−トルエンスルホニルジアゾメタン、シクロヘキサンスルホニル・１，１−ジメチルエタンスルホニルジアゾメタン、ビス（１，１−ジメチルエタンスルホニル）ジアゾメタン、ビス（１−メチルエタンスルホニル）ジアゾメタン、ビス（３，３−ジメチル−１，５−ジオキサスピロ［５．５］ドデカン−８−スルホニル）ジアゾメタン、ビス（１，４−ジオキサスピロ［４．５］デカン−７−スルホニル）ジアゾメタン、ビス（ｔ−ブチルスルホニル）ジアゾメタン等を挙げることができる。 As said disulfonyl diazomethane compound which can be used for this invention, the compound represented by following formula (4) can be mentioned, for example.

In the formula (4), each R ⁵ independently represents a monovalent group such as an alkyl group, an aryl group, a halogen-substituted alkyl group, or a halogen-substituted aryl group.
Specific examples of the disulfonyldiazomethane compound include bis (trifluoromethanesulfonyl) diazomethane, bis (cyclohexanesulfonyl) diazomethane, bis (phenylsulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, and bis (2,4-dimethylbenzenesulfonyl). ) Diazomethane, bis (4-t-butylphenylsulfonyl) diazomethane, bis (4-chlorobenzenesulfonyl) diazomethane, methylsulfonyl · p-toluenesulfonyldiazomethane, cyclohexanesulfonyl · p-toluenesulfonyldiazomethane, cyclohexanesulfonyl · 1,1-dimethyl Ethanesulfonyldiazomethane, bis (1,1-dimethylethanesulfonyl) diazomethane, bis (1-methylethanesulfonyl) di Zomethane, bis (3,3-dimethyl-1,5-dioxaspiro [5.5] dodecane-8-sulfonyl) diazomethane, bis (1,4-dioxaspiro [4.5] decan-7-sulfonyl) diazomethane, bis ( t-butylsulfonyl) diazomethane and the like.

式（５）において、各Ｒ⁶は相互に独立に直鎖状もしくは分岐状の１価の脂肪族炭化水素基、シクロアルキル基、アリール基、アラルキル基またはヘテロ原子を有する他の１価の有機基を示し、ＶおよびＷは相互に独立に、アリール基、水素原子、直鎖状もしくは分岐状の１価の脂肪族炭化水素基またはヘテロ原子を有する他の１価の有機基を示し、かつＶおよびＷの少なくとも一方がアリール基であるか、あるいはＶとＷが相互に連結して少なくとも１個の不飽和結合を有する炭素単環構造または炭素多環構造を形成しているか、あるいはＶとＷが相互に連結して下記式で表される基を形成している。

上式において、Ｖ'およびＷ'は相互に独立に、かつ複数存在するＶ'およびＷ'はそれぞれ同一でも異なってもよく、水素原子、ハロゲン原子、直鎖状もしくは分岐状のアルキル基、シクロアルキル基、アリール基またはアラルキル基を示すか、あるいは同一のもしくは異なる炭素原子に結合したＶ'とＷ'が相互に連結して炭素単環構造を形成しており、ｒは２〜１０の整数である。 As said disulfonylmethane compound which can be used for this invention, the compound represented by following formula (5) can be mentioned, for example.

In the formula (5), each R ⁶ is independently a linear or branched monovalent aliphatic hydrocarbon group, cycloalkyl group, aryl group, aralkyl group, or other monovalent organic having a hetero atom. V and W each independently represent an aryl group, a hydrogen atom, a linear or branched monovalent aliphatic hydrocarbon group or another monovalent organic group having a hetero atom, and At least one of V and W is an aryl group, or V and W are connected to each other to form a carbon monocyclic structure or a carbon polycyclic structure having at least one unsaturated bond, or W are connected to each other to form a group represented by the following formula.

In the above formula, V ′ and W ′ are independent of each other, and a plurality of V ′ and W ′ may be the same or different and each represents a hydrogen atom, a halogen atom, a linear or branched alkyl group, a cyclo An alkyl group, an aryl group or an aralkyl group, or V ′ and W ′ bonded to the same or different carbon atoms are connected to each other to form a carbon monocyclic structure, and r is an integer of 2 to 10 It is.

式（６−１）および式（６−２）において、各Ｒ⁷および各Ｒ⁸は相互に独立に１価の有機基を表す。Ｒ⁷の好ましい具体例としては、メチル基、エチル基、ｎ―プロピル基、フェニル基、トシル基、トリフルオロメチル基、ペンタフルオロエチル基等を挙げることができ、またＲ⁸の好ましい具体例としては、フェニル基、トシル基、１−ナフチル基等を挙げることができる。 Examples of the oxime sulfonate compound that can be used in the present invention include compounds represented by the following formula (6-1) or formula (6-2).

In formula (6-1) and formula (6-2), each R ⁷ and each R ⁸ independently represent a monovalent organic group. Preferred specific examples of R ⁷ include a methyl group, an ethyl group, an n-propyl group, a phenyl group, a tosyl group, a trifluoromethyl group, a pentafluoroethyl group, and the like, and preferred specific examples of R ⁸ Include a phenyl group, a tosyl group, a 1-naphthyl group, and the like.

  Specific examples of the hydrazine sulfonate compound that can be used in the present invention include bis (benzenesulfonyl) hydrazine, bis (p-toluenesulfonyl) hydrazine, bis (trifluoromethanesulfonyl) hydrazine, bis (pentafluoroethanesulfonyl) hydrazine, bis ( n-propanesulfonyl) hydrazine, benzenesulfonylhydrazine, p-toluenesulfonylhydrazine, trifluoromethanesulfonylhydrazine, pentafluoroethanesulfonylhydrazine, n-propanesulfonylhydrazine, trifluoromethanesulfonyl / p-toluenesulfonylhydrazine and the like.

  In the present invention, the amount of the acid generator (A) used is preferably 0.1 to 20 parts by weight, more preferably 0.5 to 15 parts by weight per 100 parts by weight of the acid dissociable group-containing resin (B) described later. Part. In this case, if the amount of the acid generator (A) used is less than 0.1 parts by weight, the sensitivity and developability tend to decrease. On the other hand, if it exceeds 20 parts by weight, the transparency to radiation, pattern shape, and heat resistance are increased. Etc. tend to decrease.

Acid-dissociable group-containing resin (B)
The acid-dissociable group-containing resin (B) component in the present invention is an alkali-insoluble or hardly alkali-soluble resin having an acid-dissociable group, which becomes alkali-soluble when the acid-dissociable group is dissociated. is there.
The term “alkali-insoluble or alkali-insoluble” as used herein is employed when a resist pattern is formed from a resist film formed using a radiation-sensitive resin composition containing the acid-dissociable group-containing resin (B). When developing a film using only the acid-dissociable group-containing resin (B) instead of the resist film under alkaline development conditions, 50% or more of the initial film thickness of the film remains after development. means.

式（７）において、Ｒ⁹は水素原子またはメチル基を示し、Ｒ¹⁰は１価の有機基（但し、式（８）における−ＯＲ¹³に相当する基を除く）を表し、ｍは０〜３の整数であり、ｎは１〜３の整数であり、複数存在するＲ¹⁰は相互に同一でも異なってもよい。
式（８）において、Ｒ¹¹は水素原子またはメチル基を示し、Ｒ¹²は１価の有機基（但し、−ＯＲ¹³に相当する基を除く）を表し、Ｒ¹³は１価の酸解離性基を表し、ｐは０〜３の整数であり、ｑは１〜３の整数であり、複数存在するＲ¹²および複数存在するＲ¹³はそれぞれ相互に同一でも異なってもよい。
式（４）において、Ｒ¹⁴は水素原子またはメチル基を示し、Ｒ¹⁵はｔ−ブチル基、１−メチルシクロペンチル基または１−エチルシクロペンチル基を表す。 As the acid dissociable group-containing resin (B), for example, a hydrogen atom of the acidic functional group in an alkali-soluble resin having one or more acidic functional groups such as a phenolic hydroxyl group and a carboxyl group is dissociated in the presence of an acid. Examples of such resins substituted with one or more acid-dissociable groups that can be used include alkali-insoluble or hardly alkali-soluble resins.
In the present invention, preferred acid dissociable group-containing resins (B) include, for example, a repeating unit represented by the following formula (7) (hereinafter referred to as “repeating unit (7)”), and a following formula (8). And / or a repeating unit represented by the following formula (9) (hereinafter referred to as “repeating unit (9)”). Can be mentioned.

In Formula (7), R ⁹ represents a hydrogen atom or a methyl group, R ¹⁰ represents a monovalent organic group (excluding a group corresponding to —OR ¹³ in Formula (8)), and m represents 0 to Is an integer of 3, n is an integer of 1 to 3, and a plurality of R ¹⁰ may be the same or different from each other.
In the formula (8), R ¹¹ represents a hydrogen atom or a methyl group, R ¹² represents a monovalent organic group (excluding a group corresponding to —OR ¹³ ), and R ¹³ represents a monovalent acid dissociability. Represents a group, p is an integer of 0 to 3, q is an integer of 1 to 3, and a plurality of R ¹² and a plurality of R ¹³ may be the same or different from each other.
In the formula (4), R ¹⁴ represents a hydrogen atom or a methyl group, and R ¹⁵ represents a t-butyl group, a 1-methylcyclopentyl group or a 1-ethylcyclopentyl group.

Examples of the monovalent organic group represented by R ¹⁰ in formula (7) and R ¹² in formula (8) include, for example, a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, and 6 to 20 carbon atoms. A monovalent aromatic hydrocarbon group, a monovalent oxygen atom-containing organic group, a monovalent nitrogen atom-containing organic group and the like can be mentioned.

Examples of the linear, branched or cyclic alkyl group having 1 to 12 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, a 2-methylpropyl group, Examples thereof include a 1-methylpropyl group, a t-butyl group, a cyclopentyl group, and a cyclohexyl group.
Examples of the monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms include phenyl group, o-tolyl group, m-tolyl group, p-tolyl group, 2,4-xylyl group, and 2,6-xylyl group. Group, 3,5-xylyl group, mesityl group, o-cumenyl group, m-cumenyl group, p-cumenyl group, benzyl group, phenethyl group, 1-naphthyl group, 2-naphthyl group and the like.
Examples of the monovalent oxygen atom-containing organic group include, for example, a carboxyl group; a hydroxymethyl group, a 1-hydroxyethyl group, a 2-hydroxyethyl group, a 1-hydroxypropyl group, a 2-hydroxypropyl group, and a 3-hydroxypropyl group. 1-hydroxybutyl group, 2-hydroxybutyl group, 3-hydroxybutyl group, 4-hydroxybutyl group, 3-hydroxycyclopentyl group, 4-hydroxycyclohexyl group, etc. Or cyclic hydroxyalkyl group; methoxy group, ethoxy group, n-propoxy group, i-propoxy group, n-butoxy group, 2-methylpropoxy group, 1-methylpropoxy group, t-butoxy group, cyclopentyloxy group, cyclohexyl C1-C8 straight, branched or cyclic such as oxy group A linear alkoxycarbonyloxy group having 2 to 9 carbon atoms such as a methoxycarbonyloxy group, an ethoxycarbonyloxy group, an n-propoxycarbonyloxy group, and an n-butoxycarbonyloxy group; (1-methoxyethoxy) methyl Group, (1-ethoxyethoxy) methyl group, (1-n-propoxyethoxy) methyl group, (1-n-butoxyethoxy) methyl group, (1-cyclopentyloxyethoxy) methyl group, (1-cyclohexyloxyethoxy) A linear, branched or cyclic (1-alkoxyalkoxy) alkyl group having 3 to 11 carbon atoms such as a methyl group, a (1-methoxypropoxy) methyl group, a (1-ethoxypropoxy) methyl group; methoxycarbonyloxymethyl Group, ethoxycarbonyloxymethyl group, n-propo 3 to 10 carbon atoms such as a sicarbonyloxymethyl group, i-propoxycarbonyloxymethyl group, n-butoxycarbonyloxymethyl group, t-butoxycarbonyloxymethyl group, cyclopentyloxycarbonyloxymethyl group, cyclohexyloxycarbonyloxymethyl group, etc. And a straight-chain, branched or cyclic alkoxycarbonyloxyalkyl group.
Examples of the monovalent nitrogen atom-containing organic group include cyano group; cyanomethyl group, 1-cyanoethyl group, 2-cyanoethyl group, 1-cyanopropyl group, 2-cyanopropyl group, 3-cyanopropyl group, 1- C2-C9 linear, branched or cyclic cyanoalkyl groups such as cyanobutyl group, 2-cyanobutyl group, 3-cyanobutyl group, 4-cyanobutyl group, 3-cyanocyclopentyl group, 4-cyanocyclohexyl group, etc. Can be mentioned.

Examples of the monovalent acid dissociable group for R ¹³ in formula (8) include a substituted methyl group, a 1-substituted ethyl group, a 1-branched alkyl group, a triorganosilyl group, a triorganogermyl group, an alkoxycarbonyl group, An acyl group, a monovalent cyclic acid dissociable group, etc. can be mentioned.
Examples of the substituted methyl group include a methoxymethyl group, a methylthiomethyl group, an ethoxymethyl group, an ethylthiomethyl group, a methoxyethoxymethyl group, a benzyloxymethyl group, a benzylthiomethyl group, a phenacyl group, a bromophenacyl group, and a methoxyphenacyl group. Group, methylthiophenacyl group, α-methylphenacyl group, cyclopropylmethyl group, benzyl group, diphenylmethyl group, triphenylmethyl group, bromobenzyl group, nitrobenzyl group, methoxybenzyl group, methylthiobenzyl group, ethoxybenzyl group , Ethylthiobenzyl group, piperonyl group, methoxycarbonylmethyl group, ethoxycarbonylmethyl group, n-propoxycarbonylmethyl group, i-propoxycarbonylmethyl group, n-butoxycarbonylmethyl group, t-butoxy Rubonirumechiru group, and the like can be mentioned.
Examples of the 1-substituted ethyl group include 1-methoxyethyl group, 1-methylthioethyl group, 1,1-dimethoxyethyl group, 1-ethoxyethyl group, 1-ethylthioethyl group, 1,1-diethoxy. Ethyl group, 1-ethoxypropyl group, 1-propoxyethyl group, 1-cyclohexyloxyethyl group, 1-phenoxyethyl group, 1-phenylthioethyl group, 1,1-diphenoxyethyl group, 1-benzyloxyethyl group 1-benzylthioethyl group, 1-cyclopropylethyl group, 1-phenylethyl group, 1,1-diphenylethyl group, 1-methoxycarbonylethyl group, 1-ethoxycarbonylethyl group, 1-n-propoxycarbonylethyl Group, 1-isopropoxycarbonylethyl group, 1-n-butoxycarbonylethyl group, 1-t-butyl group Butoxycarbonyl ethyl group and the like.
Examples of the 1-branched alkyl group include i-propyl group, sec-butyl group, t-butyl group, 1,1-dimethylpropyl group, 1-methylbutyl group, 1,1-dimethylbutyl group and the like. Can do.
Examples of the triorganosilyl group include trimethylsilyl group, ethyldimethylsilyl group, methyldiethylsilyl group, triethylsilyl group, i-propyldimethylsilyl group, methyldi-i-propylsilyl group, tri-i-propylsilyl group, Examples thereof include a t-butyldimethylsilyl group, a methyldi-t-butylsilyl group, a tri-t-butylsilyl group, a phenyldimethylsilyl group, a methyldiphenylsilyl group, and a triphenylsilyl group.
Examples of the triorganogermyl group include trimethylgermyl group, ethyldimethylgermyl group, methyldiethylgermyl group, triethylgermyl group, isopropyldimethylgermyl group, methyldi-i-propylgermyl group, and tri-i. -Propylgermyl group, t-butyldimethylgermyl group, methyldi-t-butylgermyl group, tri-t-butylgermyl group, phenyldimethylgermyl group, methyldiphenylgermyl group, triphenylgermyl group, etc. it can.
As said alkoxycarbonyl group, a methoxycarbonyl group, an ethoxycarbonyl group, i-propoxycarbonyl group, t-butoxycarbonyl group etc. can be mentioned, for example.
Examples of the acyl group include acetyl, propionyl, butyryl, heptanoyl, hexanoyl, valeryl, pivaloyl, isovaleryl, lauroyl, myristoyl, palmitoyl, stearoyl, oxalyl, malonyl, Succinyl group, glutaryl group, adipoyl group, piperoyl group, suberoyl group, azelaoil group, sebacoyl group, acryloyl group, propioyl group, methacryloyl group, crotonoyl group, oleoyl group, maleoyl group, fumaroyl group, mesaconoyl group, canphoroyl group, benzoyl Group, phthaloyl group, isophthaloyl group, terephthaloyl group, naphthoyl group, toluoyl group, hydroatropoyl group, atropoyl group, cinnamoyl group, furoyl group, thenoyl group, nicotinoyl group, isoni Chinoiru group, p- toluenesulfonyl group, and mesyl group.

Furthermore, examples of the monovalent acid dissociable group for R ¹³ in formula (8) include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclohexenyl group, a 4-methoxycyclohexyl group, a tetrahydrofuranyl group, and a tetrahydropyranyl group. , Tetrahydrothiofuranyl group, tetrahydrothiopyranyl group, 3-bromotetrahydropyranyl group, 4-methoxytetrahydropyranyl group, 4-methoxytetrahydrothiopyranyl group, 3-tetrahydrothiophene-1,1-dioxide group, etc. Can be mentioned.

  Among these monovalent acid dissociable groups, t-butyl group, benzyl group, 1-methoxyethyl group, 1-ethoxyethyl group, trimethylsilyl group, t-butoxycarbonyl group, t-butoxycarbonylmethyl group, tetrahydrofuranyl Group, tetrahydropyranyl group, tetrahydrothiofuranyl group, tetrahydrothiopyranyl group and the like are preferable.

Preferred repeating units (7) in the present invention include, for example, 2-hydroxystyrene, 3-hydroxystyrene, 4-hydroxystyrene, 2-hydroxy-α-methylstyrene, 3-hydroxy-α-methylstyrene, 4-hydroxy -Α-methylstyrene, 2-methyl-3-hydroxystyrene, 4-methyl-3-hydroxystyrene, 5-methyl-3-hydroxystyrene, 2-methyl-4-hydroxystyrene, 3-methyl-4-hydroxystyrene , 3,4-dihydroxystyrene, 2,4,6-trihydroxystyrene and the like, which are repeating units having a polymerizable unsaturated bond cleaved.
The repeating unit (7) can be used alone or in combination of two or more.

Preferred repeating units (8) in the present invention include, for example, 4-t-butoxystyrene, 4-t-butoxy-α-methylstyrene, 4- (2-ethyl-2-propoxy) styrene, 4- (2- List repeating units in which a polymerizable unsaturated bond such as ethyl-2-propoxy) -α-methylstyrene, 4- (1-ethoxyethoxy) styrene, 4- (1-ethoxyethoxy) -α-methylstyrene is cleaved. Can do.
The repeating unit (3) can be used alone or in combination of two or more.

Preferred repeating units (9) in the present invention include t-butyl (meth) acrylate, 1-methylcyclopentyl (meth) acrylate and 1-ethylcyclopentyl (meth) acrylate.
The repeating unit (4) can be used alone or in combination of two or more.

In the present invention, the acid dissociable group-containing resin (B) can further have a repeating unit other than the repeating units (7) to (9) (hereinafter referred to as “other repeating units”).
As other repeating units, for example, styrene, α-methylstyrene, 2-methylstyrene, 3-methylstyrene, 4-methylstyrene, 2-methoxystyrene, 3-methoxystyrene, 4-methoxystyrene, 4- (2 Vinyl aromatic compounds such as -t-butoxycarbonylethyloxy) styrene;
Methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, i-propyl (meth) acrylate, n-butyl (meth) acrylate, 2-methylpropyl (meth) acrylate 1-methylpropyl (meth) acrylate, n-pentyl (meth) acrylate, neopentyl (meth) acrylate, n-hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, (meth) acrylic acid 2-hydroxyethyl, 2-hydroxy-n-propyl (meth) acrylate, 3-hydroxy-n-propyl (meth) acrylate, phenyl (meth) acrylate, benzyl (meth) acrylate, (meth) acrylic acid 1-methyladamantyl, 1-ethyladamantyl (meth) acrylate, 8-methyl-8- (meth) acrylate Licyclodecyl, 8-ethyl-8-tricyclodecyl (meth) acrylate, 3-methyl-3-tetracyclododecenyl (meth) acrylate, 3-ethyl-3-tetracyclododecyl (meth) acrylate (Meth) acrylic acid esters such as senyl and 2,5-dimethylhexane-2,5-di (meth) acrylate;

Unsaturated carboxylic acids (anhydrides) such as (meth) acrylic acid, crotonic acid, maleic acid, maleic anhydride, fumaric acid, cinnamic acid;
Carboxyalkyl esters of unsaturated carboxylic acids such as 2-carboxyethyl (meth) acrylate, 2-carboxy-n-propyl (meth) acrylate, 3-carboxy-n-propyl (meth) acrylate;
Unsaturated nitrile compounds such as (meth) acrylonitrile, α-chloroacrylonitrile, crotonnitrile, maleinnitrile, fumaronitrile;
Unsaturated amide compounds such as (meth) acrylamide, N, N-dimethyl (meth) acrylamide, crotonamide, maleinamide, fumaramide;
Unsaturated imide compounds such as maleimide, N-phenylmaleimide, N-cyclohexylmaleimide;
N-vinyl-ε-caprolactam, N-vinyl pyrrolidone, 2-vinyl pyridine, 3-vinyl pyridine, 4-vinyl pyridine, 2-vinyl imidazole, other nitrogen-containing vinyl compounds such as 4-vinyl imidazole, etc. Examples include units in which a saturated bond is cleaved.
In the acid dissociable group-containing resin (B), other repeating units can be used alone or in combination of two or more.

  Particularly preferred acid-dissociable group-containing resins (B) in the present invention include, for example, 4-hydroxystyrene / 4-t-butoxystyrene copolymer, 4-hydroxystyrene / 4-t-butoxystyrene / acrylic acid 1- Methylcyclopentyl copolymer, 4-hydroxystyrene / 4-t-butoxystyrene / acrylic acid 1-ethylcyclopentyl copolymer, 4-hydroxystyrene / 4-t-butoxystyrene / styrene copolymer, 4-hydroxystyrene / T-butyl acrylate / styrene copolymer, 4-hydroxystyrene / 1-methylcyclopentyl acrylate / styrene copolymer, 4-hydroxystyrene / 1-ethylcyclopentyl acrylate / styrene copolymer, 4-hydroxystyrene / 4-t-Butoxystyrene / 2,5-dimethyl It may be mentioned hexane-2,5-diacrylate copolymer.

  In the acid dissociable group-containing resin (B), the acid dissociable group introduction rate (acid dissociation property relative to the total number of unprotected acidic functional groups and acid dissociable groups in the acid dissociable group-containing resin (B)) The ratio of the number of groups) cannot be defined unconditionally depending on the type of acid-dissociable group or the alkali-soluble resin into which the group is introduced, but is preferably 10 to 100%, more preferably 15 to 100%.

  In the acid dissociable group-containing resin (B), the content of the repeating unit (7) is preferably 60 to 80 mol%, more preferably 65 to 75 mol%, and the content of the repeating unit (8) is Preferably it is 15-40 mol%, More preferably, it is 20-35 mol%, The content rate of a repeating unit (9) becomes like this. Preferably it is 10-40 mol%, More preferably, it is 10-30 mol%, The content of the repeating unit is usually 25 mol% or less, preferably 10 mol% or less. In this case, if the content of the repeating unit (7) is less than 60 mol%, the adhesion of the resist pattern to the substrate tends to be reduced, whereas if it exceeds 80 mol%, the contrast after development tends to be reduced. is there. In addition, when the content of the repeating unit (8) is less than 15 mol%, the resolution tends to decrease, and when it exceeds 40 mol%, the adhesion of the resist pattern to the substrate tends to decrease. In addition, when the content of the repeating unit (9) is less than 10 mol%, the resolution tends to decrease. On the other hand, when the content exceeds 40%, the dry etching resistance may be insufficient. Furthermore, when other repeating units exceed 25 mol%, the resolution tends to decrease.

The polystyrene-reduced weight molecular weight (hereinafter referred to as “Mw”) of the acid-dissociable group-containing resin (B) measured by gel permeation chromatography (GPC) is preferably 1,000 to 150,000, more preferably 3 , 100,000 to 100,000.
In addition, the ratio (Mw / Mn) of the Mw of the acid-dissociable group-containing resin (B) and the polystyrene-equivalent molecular weight (hereinafter referred to as “Mn”) measured by gel permeation chromatography (GPC) is usually 1-10, preferably 1-5.
In this invention, acid dissociable group containing resin (B) can be used individually or in mixture of 2 or more types.

式中、Ｒ¹は１価の有機基を表す。１価の有機基としては、脂肪族基、芳香族基、複素環基等を挙げることができる。
上記脂肪族基には、鎖状または環状（架橋炭素環状を含む）のアルキル基およびアルケニル基が包含される。脂肪族基の炭素数は、１〜１２、好ましくは１〜８である。
芳香族基は、単環または多環構造のものであってよく、この芳香族基には、アリール基およびアリールアルキル基が包含される。複素環基は、単環または多環構造のものであることができ、その複素環基には、従来公知の各種の複素環化合物から誘導されるものが包含される。
上記脂肪族基、芳香族基および複素環基は、ハロゲン原子、炭化水素オキシ基、アミノ基、置換アミノ基等の置換基を有していてもよい。
上記脂肪族基および芳香族基の具体例としては、例えば、メチル基、エチル基、プロピル基、ブチル基、アシル基、ヘキシル基、ビニル基、プロピル基、アリル基、シクロヘキシル基、シクロオクチル基、ビシクロ炭化水素基、トリシクロ炭化水素基、フェニル基、トリル基、ベンジル基、フェネチル基、ナフチル基、ナフチルメチル基およびそれらの置換体が挙げられる。置換体としては、トリフルオロメチル基、ノナフルオロブチル基が挙げられる。
上記複素環基としては、各種の複素環化合物に由来する１価の基、例えば、フラン、ピロール、ベンゾフラン、インドール、カルバゾール等の１つのヘテロ原子を含む五員環化合物とその縮合環化合物、オキサゾール、ピラゾール等の２つのヘテロ原子を含む五員環化合物とその縮合環化合物、ピラン、ピロン、クマリン、ピリジン、キノリン、イソキノリン、アクリジン等の１つのヘテロ原子を含む六員環化合物とその縮合環化合物、ピリダジン、ピリミジン、ピラジン、フタルジン等の２つのヘテロ原子を含む六員環化合物とその縮合環化合物等から誘導された各種の１価の有機基が挙げられる。 Acid proliferator (C)
The acid proliferating agent (C) component in the present invention is a compound that generates an acid in a chain reaction by the action of an acid, and is a compound having a sulfonate group represented by the following formula (1) on the carbocyclic skeleton.

In the formula, R ¹ represents a monovalent organic group. Examples of monovalent organic groups include aliphatic groups, aromatic groups, and heterocyclic groups.
The aliphatic group includes a linear or cyclic (including bridged carbocyclic) alkyl group and alkenyl group. The aliphatic group has 1 to 12, preferably 1 to 8 carbon atoms.
The aromatic group may have a monocyclic or polycyclic structure, and the aromatic group includes an aryl group and an arylalkyl group. The heterocyclic group may have a monocyclic or polycyclic structure, and the heterocyclic group includes those derived from various conventionally known heterocyclic compounds.
The aliphatic group, aromatic group and heterocyclic group may have a substituent such as a halogen atom, a hydrocarbon oxy group, an amino group or a substituted amino group.
Specific examples of the aliphatic group and aromatic group include, for example, methyl group, ethyl group, propyl group, butyl group, acyl group, hexyl group, vinyl group, propyl group, allyl group, cyclohexyl group, cyclooctyl group, Bicyclohydrocarbon group, tricyclohydrocarbon group, phenyl group, tolyl group, benzyl group, phenethyl group, naphthyl group, naphthylmethyl group and their substitutes are exemplified. Examples of the substituent include a trifluoromethyl group and a nonafluorobutyl group.
Examples of the heterocyclic group include monovalent groups derived from various heterocyclic compounds, for example, five-membered ring compounds containing one heteroatom such as furan, pyrrole, benzofuran, indole, carbazole, condensed ring compounds thereof, and oxazoles. , 5-membered ring compounds containing two heteroatoms such as pyrazole and condensed ring compounds thereof, pyran, pyrone, coumarin, pyridine, quinoline, isoquinoline, acridine etc. , Various monovalent organic groups derived from six-membered ring compounds containing two heteroatoms such as pyridazine, pyrimidine, pyrazine, and phthalidine, and condensed ring compounds thereof.

式（１−１）〜式（１−６）において、Ｒ¹は式（１）におけるそれと同じ意味を有する。Ｒは水素原子、脂肪族基または芳香族基を表す。脂肪族基には、鎖状または環状（架橋環状を含む）のアルキル基またはアルケニル基が包含され、芳香族基には、アリール基やアリールアルキル基が包含される。それらの脂肪族基および芳香族基はハロゲン原子やアルコキシ基、アミノ基、置換アミノ基等の置換基を有していてもよい。上記脂肪族基の炭素数は１〜１２、好ましくは１〜８である。芳香族基は、単環または多環構造であることができる。Ｒは脂肪族基または芳香族基であるのが好ましい。
式（１−５）において、Ｒ^1'はフッ素原子を含んでもよいアルキル基、置換基を有してもよい環状のアルキル基、および置換基を有してもよい芳香族基を表す。Ｙは単結合、置換基を含む２価の有機基であり、２価の有機基としては、例えば下記式（１−５−１）で表される基が好ましい。

Preferred acid proliferating agents (C) that can be used in the present invention are represented below as formulas (1-1) to (1-6).

In formula (1-1) to formula (1-6), R ¹ has the same meaning as that in formula (1). R represents a hydrogen atom, an aliphatic group or an aromatic group. Aliphatic groups include chain or cyclic (including bridged cyclic) alkyl or alkenyl groups, and aromatic groups include aryl groups and arylalkyl groups. These aliphatic groups and aromatic groups may have a substituent such as a halogen atom, an alkoxy group, an amino group, or a substituted amino group. The aliphatic group has 1 to 12 carbon atoms, preferably 1 to 8 carbon atoms. The aromatic group can be a monocyclic or polycyclic structure. R is preferably an aliphatic group or an aromatic group.
In Formula (1-5), R ^{1 ′} represents an alkyl group that may contain a fluorine atom, a cyclic alkyl group that may have a substituent, and an aromatic group that may have a substituent. Y is a divalent organic group containing a single bond or a substituent, and the divalent organic group is preferably a group represented by the following formula (1-5-1), for example.

  The bicyclo compound (decalin derivative) represented by the formula (1-1) has a cross-linking bond at the 1,6-position, and the bicyclo compound represented by the formula (1-2) is the 1,3-position. The bicyclo compound represented by the formulas (1-3) and (1-4) has a crosslink at the 1,4-position. Therefore, in these bicyclo compounds, the conformational change of the cyclohexane ring is highly suppressed, and the ring structure exhibits rigidity.

Specific examples of the acid proliferating agent that can be used in the present invention are shown below. In the following examples, Me represents a methyl group.

The acid multiplication agent (C) that can be used in the present invention is decomposed by an acid-catalyzed reaction to generate an acid (R ¹ SO ₃ H) again. One acid increases in one reaction, and the reaction proceeds at an accelerated rate as the reaction proceeds. Since the generated acid itself induces self-decomposition, the strength of the generated acid is preferably 3 or less, particularly 2 or less, as an acid dissociation constant, pKa. A weaker acid cannot cause autolysis. As an acid liberated by such a reaction (R ¹ SO ₃ H), methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, pentanesulfonic acid, hexanesulfonic acid, heptanesulfonic acid, octanesulfonic acid, Cyclohexanesulfonic acid, camphorsulfonic acid, trifluoromethanesulfonic acid, 2,2,2-trifluoroethanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, p-bromobenzenesulfonic acid, p-nitrobenzenesulfonic acid, 2- Examples thereof include thiophenesulfonic acid, 1-naphthalenesulfonic acid, and 2-naphthalenesulfonic acid. The acid multiplication agent (C) that can be used in the present invention can be further decomposed in a chain by heating.

  The acid proliferating agent (C) that can be used in the present invention can be easily synthesized, for example, by reacting a sulfonic acid halide corresponding to the corresponding diol compound. This diol compound has two cis and trans isomers, and the cis isomer is more thermally stable and is preferably used. The compound of the present invention can be stably stored unless an acid coexists.

  In the present invention, the amount of the acid proliferating agent (C) used is preferably 1 to 20 parts by weight, more preferably 1 to 10 parts by weight per 100 parts by weight of the acid dissociable group-containing resin (B). In this case, if the amount of the acid proliferating agent (C) used is less than 1 part by weight, the effect of improving the roughness cannot be obtained and the sensitivity tends to decrease. On the other hand, if the amount exceeds 20 parts by weight, the pattern shape, heat resistance, etc. Tends to decrease.

式（２−１）および式（２−２）において、Ｒ¹⁶〜Ｒ²⁰は水素原子、置換基を有してもよい炭素数１〜１０のアルキル基、ハロゲン原子、置換基を有してもよい脂環式炭化水素基を表す。
Ｒ¹⁶〜Ｒ²⁰の例としては、例えば、メチル基、エチル基、ｎ−ブチル基、ｔｅｒｔ−ブチル基、トリフルオロメチル基、フッ素原子、メトキシ基、ｔ−ブトキシ基、ｔ−ブトキシカルボニルメチルオキシ基を挙げることができる。好ましくは、水素原子、ｔｅｒｔ−ブチル基である。
式（２−１）および式（２−２）において、Ｘ⁻はＯＨ⁻、Ｒ²‐ＯＨ⁻、Ｒ²‐ＣＯＯ⁻を表し、（Ｒ²は１価の有機基を表し、１価の有機基としては置換基を有してもよいアルキル基、アリール基を挙げることができる。
好ましいＸ⁻の例としては、ＯＨ⁻、ＣＨ₃ＣＯＯ⁻、以下の式で表される化合物が挙げられる。

The photosensitive basic compound (D) that can be used in the present invention is efficiently decomposed into the corresponding neutral fragments in the exposed area, and remains as it is in the unexposed area. Compared with a non-photosensitive basic compound, it is possible to effectively use the acid in the exposed area, and thus the sensitivity can be improved.
Preferred examples of the photosensitive basic compound (D) include compounds represented by the following formulas (2-1) and (2-2).

In Formula (2-1) and Formula (2-2), R ^{16 to} R ²⁰ have a hydrogen atom, an alkyl group having 1 to 10 carbon atoms that may have a substituent, a halogen atom, and a substituent. Represents a good alicyclic hydrocarbon group.
Examples of R ^{16 to} R ²⁰ include, for example, methyl group, ethyl group, n-butyl group, tert-butyl group, trifluoromethyl group, fluorine atom, methoxy group, t-butoxy group, t-butoxycarbonylmethyloxy. The group can be mentioned. Preferably, they are a hydrogen atom and a tert-butyl group.
In the formula (2-1) and formula (2-2), X ^- is ^{OH -, R 2 -OH -,} R 2 -COO - represents, (R ² represents a monovalent organic group, a monovalent Examples of the organic group include an alkyl group and an aryl group which may have a substituent.
Preferred examples of X ⁻ include OH ⁻ , CH ₃ COO ⁻ , and compounds represented by the following formulae.

Specific examples of the photosensitive basic compound (D) that can be suitably used in the present invention include a triphenylsulfonium compound as M ⁺ , OH ⁻ and CH ₃ COO ⁻ as X ⁻ , and a compound represented by the following formula: Can be mentioned.

M ⁺ of the photosensitive basic compound (D) that can be used in the present invention is produced according to a known method described in, for example, Advances in Polymer Sciences, Vol. 62, p. 1-48 (1984). Can do.

  In the present invention, the amount of the photosensitive basic compound (D) used is preferably 0.001 to 10 parts by weight, more preferably 0.005 to 5 parts by weight per 100 parts by weight of the acid dissociable group-containing resin (B). Part. In this case, if the amount of the photosensitive basic compound (D) used is less than 0.001 part by weight, depending on the process, the pattern shape or dimensional fidelity as a resist tends to decrease, whereas if it exceeds 10 parts by weight. The sensitivity as a resist tends to decrease.

The positive radiation sensitive resin composition of the present invention comprises a radiation sensitive acid generator (A), an acid dissociable group-containing resin (B), an acid proliferating agent (C), and a photosensitive basic compound (D). As an essential component.
As the radiation sensitive acid generator (A), a sulfonimide compound, an onium salt compound, and a disulfonyldiazomethane compound are preferable.
As the acid dissociable group-containing resin (B), the hydrogen atom of the acidic functional group in the alkali-soluble resin having one or more acidic functional groups such as phenolic hydroxyl group and carboxyl group is dissociated in the presence of an acid. As such, a resin substituted with one or more acid-dissociable groups that is alkali-insoluble or hardly alkali-soluble is preferred.
As the acid proliferating agent (C), a compound in which a hydroxyl group is bonded to a carbon atom forming a carbocyclic skeleton and a sulfonate group is bonded to a carbon atom adjacent to the carbon atom to which the hydroxyl group is bonded, or a carbocyclic skeleton is formed. A compound in which a sulfonate group is bonded to a carbon atom is preferred.
As the photosensitive basic compound (D), compounds represented by the above formulas (2-1) and (2-2) are preferable.
By including each of the above preferred essential components, the resolution of the line and space pattern is excellent, and the nano edge roughness is improved.

式（１１）において、各Ｒ²¹は相互に独立に水素原子、アルキル基、アリール基またはアラルキル基を表し、これらの各基は置換されてもよい。 Acid Diffusion Control Agent The positive radiation-sensitive resin composition of the present invention includes an acid generated from the radiation-sensitive acid generator (A) when irradiated with radiation, and an acid proliferation agent (C) in a chain reaction. It is preferable to add an acid diffusion control agent having an action of controlling the diffusion phenomenon of the acid generated from the resist film in the resist film and suppressing an undesirable chemical reaction in the non-exposed region.
By using such an acid diffusion control agent, the storage stability of the positive radiation-sensitive resin composition is further improved, the resolution of the resist is improved, and the change of the line width of the resist pattern due to the fluctuation of PED is suppressed. And the process stability is extremely excellent.
As the acid diffusion controller, a nitrogen-containing organic compound whose basicity is not changed by exposure or heat treatment in the resist pattern forming step is preferable.
As such a nitrogen-containing organic compound, for example, a compound represented by the following formula (11) (hereinafter referred to as “nitrogen-containing compound (i)”), a diamino compound having two nitrogen atoms in the same molecule ( Hereinafter, referred to as “nitrogen-containing compound (ii)”), diamino polymer having 3 or more nitrogen atoms (hereinafter referred to as “nitrogen-containing compound (iii)”), amide group-containing compound, urea compound, nitrogen-containing complex. A ring compound etc. can be mentioned.

In the formula (11), each R ²¹ independently represents a hydrogen atom, an alkyl group, an aryl group or an aralkyl group, and each of these groups may be substituted.

  Examples of the nitrogen-containing compound (i) include linear, branched or cyclic monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine and cyclohexylamine. Di-n-butylamine, di-n-pentylamine, di-n-hexylamine, di-n-heptylamine, di-n-octylamine, di-n-nonylamine, di-n-decylamine, methyl Dialkylamines such as cyclohexylamine and dicyclohexylamine; triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-pentylamine, tri-n-hexylamine, tri-n-heptylamine, tri-n -Octylamine, tri-n-nonylamine, tri-n-decylamine, Linear, branched or cyclic trialkylamines such as cyclohexyldimethylamine, methyldicyclohexylamine and tricyclohexylamine; alkanolamines such as ethanolamine, diethanolamine and triethanolamine; aniline, N-methylaniline, N , N-dimethylaniline, 2-methylaniline, 3-methylaniline, 4-methylaniline, 4-nitroaniline, diphenylamine, triphenylamine, 1-naphthylamine, and other aromatic amines.

Examples of the nitrogen-containing compound (ii) include ethylenediamine, N, N, N ′, N′-tetramethylethylenediamine, N, N, N ′, N′-tetrakis (2-hydroxypropyl) ethylenediamine, tetramethylenediamine, Hexamethylenediamine, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenyl ether, 4,4′-diaminobenzophenone, 4,4′-diaminodiphenylamine, 2,2′-bis (4-aminophenyl) propane, 2- (3-aminophenyl) -2- (4-aminophenyl) propane, 2- (4-aminophenyl) -2- (3-hydroxyphenyl) propane, 2- (4-aminophenyl) -2- ( 4-hydroxyphenyl) propane, 1,4-bis [1- (4-aminophenyl) -1-methylethyl] benzene And 1,3-bis [1- (4-aminophenyl) -1-methylethyl] benzene.
Examples of the nitrogen-containing compound (iii) include polyethyleneimine, polyallylamine, N- (dimethylaminoethyl) acrylamide polymer, and the like.

Examples of the amide group-containing compound include formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, propionamide, benzamide, pyrrolidone, N-methylpyrrolidone and the like. Can be mentioned.
Examples of the urea compound include urea, methylurea, 1,1-dimethylurea, 1,3-dimethylurea, 1,1,3,3-tetramethylurea, 1,3-diphenylurea, tributylthiourea and the like. be able to.
Examples of the nitrogen-containing heterocyclic compound include imidazoles such as imidazole, benzimidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole, 2-phenylbenzimidazole; pyridine, 2-methylpyridine, 4-methyl. Such as pyridine, 2-ethylpyridine, 4-ethylpyridine, 2-phenylpyridine, 4-phenylpyridine, 2-methyl-4-phenylpyridine, nicotine, nicotinic acid, nicotinamide, quinoline, 8-oxyquinoline, acridine, etc. In addition to pyridines, pyrazine, pyrazole, pyridazine, quinosaline, purine, pyrrolidine, piperidine, morpholine, 4-methylmorpholine, piperazine, 1,4-dimethylpiperazine, 1,4-diazabicyclo [2.2.2] octane, etc. To list It can be.

  Further, as a nitrogen-containing organic compound that acts as an acid diffusion controller, a base precursor having an acid dissociable group, for example, N- (t-butoxycarbonyl) piperidine, N- (t-butoxycarbonyl) imidazole, N- ( t-butoxycarbonyl) benzimidazole, N- (t-butoxycarbonyl) -2-phenylbenzimidazole, N- (t-butoxycarbonyl) di-n-octylamine, N- (t-butoxycarbonyl) diethanolamine, N- (T-Butoxycarbonyl) dicyclohexylamine, N- (t-butoxycarbonyl) diphenylamine and the like can be used.

Of these nitrogen-containing organic compounds, nitrogen-containing compounds (i), nitrogen-containing heterocyclic compounds, base precursors having acid dissociable groups, and the like are preferable.
The acid diffusion control agents can be used alone or in admixture of two or more.
The compounding amount of the acid diffusion controller is usually 15 parts by weight or less, preferably 0.001 to 10 parts by weight, more preferably 0.005 to 5 parts by weight per 100 parts by weight of the acid dissociable group-containing resin (A). It is. In this case, when the compounding amount of the acid diffusion controller exceeds 15 parts by weight, the sensitivity as a resist and the developability of the exposed part tend to be lowered. In addition, if the compounding quantity of an acid diffusion control agent is less than 0.001 weight part, there exists a possibility that the pattern shape and dimension fidelity as a resist may fall depending on process conditions.

In the positive radiation sensitive resin composition of the present invention, as an additive, a surfactant exhibiting an action of improving the coating property and striation of the composition, the developing property as a resist, and the like can be blended.
Examples of such surfactants include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene n-octylphenol ether, polyoxyethylene n-nonylphenol ether, polyethylene glycol dilaurate, polyethylene Glycol distearate and the like can be mentioned, and as commercial products, for example, F-top EF301, EF303, EF352 (manufactured by Tochem Products), Megafax F171, F173 (Dainippon Ink) Chemical Industries, Ltd.), Florard FC430, FC431 (Sumitomo 3M), Asahi Guard AG710, Surflon S-382, SC101, SC102, SC 03 (manufactured by Asahi Glass Co., Ltd.) the SC104, the SC105, the SC106, KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), Polyflow No. 75, no. 95 (manufactured by Kyoeisha Chemical Co., Ltd.).
The said surfactant can be used individually or in mixture of 2 or more types.
The compounding amount of the surfactant is usually 2 parts by weight or less per 100 parts by weight of the acid dissociable group-containing resin (B).
Furthermore, an antihalation agent such as 4-hydroxy-4′-methylchalcone, a shape improver, a storage stabilizer, an antifoaming agent, and the like can be blended in the positive radiation sensitive resin composition of the present invention.

Solvent The positive-type radiation-sensitive resin composition of the present invention usually has a solvent so that the concentration of the total solid content is usually 0.1 to 50% by weight, preferably 1 to 40% by weight. Then, it is prepared as a composition solution by, for example, filtering with a filter having a pore diameter of about 200 nm.
Examples of the solvent used for the preparation of the composition solution include ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol mono-n-propyl ether acetate, ethylene glycol mono-n-butyl ether acetate and the like. Glycol monoalkyl ether acetates; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol mono-n-propyl ether, propylene glycol mono-n-butyl ether; propylene glycol dimethyl ether, propylene glycol diethyl Ether, propylene glycol di-n-propyl ether, propylene Propylene glycol dialkyl ethers such as recall di-n-butyl ether; propylene glycol monoalkyl such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol mono-n-propyl ether acetate, propylene glycol mono-n-butyl ether acetate Ether acetates;
Lactic acid esters such as methyl lactate, ethyl lactate, n-propyl lactate, i-propyl lactate; n-amyl formate, i-amyl formate, ethyl acetate, n-propyl acetate, i-propyl acetate, n-butyl acetate , Aliphatic carboxylic acid esters such as i-butyl acetate, n-amyl acetate, i-amyl acetate, i-propyl propionate, n-butyl propionate and i-butyl propionate; ethyl hydroxyacetate, 2-hydroxy- Ethyl 2-methylpropionate, methyl 2-hydroxy-3-methylbutyrate, ethyl methoxyacetate, ethyl ethoxyacetate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, 3-ethoxypropion Ethyl acetate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate , Other esters such as 3-methyl-3-methoxybutyl propionate, 3-methyl-3-methoxybutyl butyrate, methyl acetoacetate, ethyl acetoacetate, methyl pyruvate, ethyl pyruvate; toluene, xylene Aromatic hydrocarbons such as methyl ethyl ketone, 2-pentanone, 2-hexanone, 2-heptanone, 3-heptanone, 4-heptanone, cyclohexanone and the like; N-methylformamide, N, N-dimethylformamide, N- Examples thereof include amides such as methylacetamide, N, N-dimethylacetamide, and N-methylpyrrolidone; lactones such as γ-butyrolacun.
These solvents can be used alone or in admixture of two or more.

Formation of resist pattern When forming a resist pattern from the positive-type radiation-sensitive resin composition of the present invention, the composition solution prepared as described above is appropriately applied by spin coating, cast coating, roll coating, etc. With this coating means, for example, a resist film is formed by coating on a substrate such as a silicon wafer or a wafer coated with aluminum, and in some cases, a heat treatment (hereinafter, referred to as 70 ° C. to 160 ° C.) is performed. After performing “PB”), exposure is performed through a predetermined mask pattern.
Examples of radiation used for exposure include far ultraviolet rays such as KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), and F ₂ excimer laser (wavelength 157 nm), EB, EUV (wavelength 13.4 nm), and the like. And extreme ultraviolet rays. Among these, extreme ultraviolet rays such as EB and EUV (wavelength 13.4 nm) are preferable.
The exposure conditions such as the exposure amount are appropriately selected according to the composition of the positive radiation-sensitive resin composition, the type of each additive, and the like.
In the present invention, in order to stably form a fine resist pattern with high accuracy, it is preferable to perform a heat treatment (hereinafter referred to as “PEB”) for 30 seconds or more at a temperature of 70 to 160 ° C. after exposure. . In this case, when the temperature of the PEB is less than 70 ° C., there is a possibility that the variation in sensitivity depending on the type of the substrate spreads.

Thereafter, using an alkali developer, development is usually performed at 10 to 50 ° C. for 10 to 200 seconds, preferably at 15 to 30 ° C. for 15 to 100 seconds, particularly preferably at 20 to 25 ° C. for 15 to 90 seconds. Thus, a predetermined resist pattern is formed.
Examples of the alkali developer include alkali metal hydroxide, aqueous ammonia, mono-, di- or tri-alkylamines, mono-, di- or tri-alkanolamines, heterocyclic amines, and tetraalkyls. Alkaline compounds such as ammonium hydroxides, choline, 1,8-diazabicyclo- [5.4.0] -7-undecene, 1,5-diazabicyclo- [4.3.0] -5-nonene are usually used. An alkaline aqueous solution dissolved so as to have a concentration of 1 to 10% by weight, preferably 1 to 5% by weight, particularly preferably 1 to 3% by weight is used.
In addition, a water-soluble organic solvent such as methanol or ethanol or a surfactant can be appropriately added to the developer composed of the alkaline aqueous solution.
In forming the resist pattern, a protective film can be provided on the resist film in order to prevent the influence of basic impurities contained in the environmental atmosphere.

Reference Example 1: Synthesis of acid-dissociable group-containing resin (B-1) 101 g of p-acetoxystyrene, 5 g of styrene, 42 g of pt-butoxystyrene, 6 g of azobisisobutyronitrile (AIBN), and 1 g of t-dodecyl mercaptan Was dissolved in 160 g of propylene glycol monomethyl ether, followed by polymerization for 16 hours while maintaining the reaction temperature at 70 ° C. in a nitrogen atmosphere. After polymerization, the reaction solution was dropped into 2,000 g of n-hexane to coagulate and purify the resulting resin. Next, 150 g of propylene glycol monomethyl ether was added to the purified resin, and then 300 g of methanol, 80 g of triethylamine and 15 g of water were further added, and a hydrolysis reaction was performed for 8 hours while refluxing at the boiling point. After the reaction, the solvent and triethylamine were distilled off under reduced pressure, and the resulting resin was redissolved in acetone so that the solid content concentration was 20% by weight, and then dropped into 2,000 g of water to solidify, thereby forming a white The powder was filtered and dried overnight at 50 ° C. under reduced pressure.
The obtained resin has Mw of 16,000 and Mw / Mn of 1.7. As a result of ¹³ C-NMR analysis, the copolymerization molar ratio of p-hydroxystyrene, styrene and pt-butoxystyrene is as follows. 72: 5: 23. This resin is referred to as “resin (B-1)”.
Mw and Mn of the resin (B-1) and the resins obtained in Reference Example 2 and Reference Example 3 below were measured using GPC columns (2 G2000HXL, 1 G3000HXL, 1 G4000HXL) manufactured by Tosoh Corporation. The measurement was performed by gel permeation chromatography (GPC) using monodisperse polystyrene as a standard under the analysis conditions of a flow rate of 1.0 ml / min, an elution solvent tetrahydrofuran, and a column temperature of 40 ° C.

Reference Example 2: Synthesis of acid-dissociable group-containing resin (B-2) 100 g of p-acetoxystyrene, 25 g of t-butyl acrylate, 18 g of styrene, 6 g of AIBN and 1 g of t-dodecyl mercaptan were dissolved in 230 g of propylene glycol monomethyl ether. The polymerization was carried out for 16 hours under a nitrogen atmosphere while maintaining the reaction temperature at 70 ° C. After polymerization, the reaction solution was dropped into 2,000 g of n-hexane to coagulate and purify the resulting resin. Next, 150 g of propylene glycol monomethyl ether was added to the purified resin, and then 300 g of methanol, 80 g of triethylamine and 15 g of water were further added, and a hydrolysis reaction was performed for 8 hours while refluxing at the boiling point. After the reaction, the solvent and triethylamine were distilled off under reduced pressure, and the resulting resin was redissolved in acetone so that the solid content concentration was 20% by weight, and then dripped into 2,000 g of water to solidify it. The white powder was filtered and dried overnight at 50 ° C. under reduced pressure.
The obtained resin has Mw of 11,500 and Mw / Mn of 1.6. As a result of ¹³ C-NMR analysis, the copolymerization molar ratio of p-hydroxystyrene, t-butyl acrylate and styrene is 61:19:20. This resin is referred to as “resin (B-2)”.

Reference Example 3: Synthesis of acid-dissociable group-containing resin (B-3) 25 g of p-hydroxystyrene / pt-butoxystyrene copolymer having a molar ratio of 90:10 was dissolved in 100 g of n-butyl acetate, After bubbling with nitrogen gas for 30 minutes, 3.3 g of ethyl vinyl ether was added, 1 g of p-toluenesulfonic acid pyridinium salt was added as a catalyst, and the mixture was allowed to react at room temperature for 12 hours. Thereafter, the reaction solution was dropped into 2,000 g of a 1 wt% aqueous ammonia solution to precipitate the resin, filtered, and dried overnight in a vacuum dryer at 50 ° C.
The obtained resin had Mw of 13,000 and Mw / Mn of 1.01, and as a result of ¹³ C-NMR analysis, 23 mol% of the hydrogen atoms of the phenolic hydroxyl group in poly (p-hydroxystyrene) was found to be The ethoxyxyethyl group had a structure in which 10 mol% was substituted with a t-butyl group. This resin is referred to as “resin (B-3)”.

Reference Example 4: Synthesis of acid-dissociable group-containing resin (B-4) The solvent was refluxed in the presence of sodium metal for 6 hours and then distilled under a nitrogen atmosphere before use. The monomer was bubbled with dry nitrogen for 1 hour and then distilled before use. 37.6 g of p-ethoxyethoxystyrene, 11.0 g of pt-butoxystyrene, and 1.4 g of styrene are dissolved in 200 g of cyclohexane and charged into a dry pressure-resistant glass bottle. And sealed. After cooling the pressure-resistant glass bottle to −20 ° C., n-butyllithium (1.83 mol / l cyclohexane solution) was added in the order of 2.96 ml and N, N, N ′, N′-tetramethylethylenediamine 0.98 g. The mixture was added and reacted for 1 hour while maintaining the temperature at -20 ° C. Thereafter, 1.0 g of methanol was injected to stop the reaction. It was confirmed that the color of the solution changed from red to colorless. After washing with 200 g of 3% by weight oxalic acid solution, 200 g of propylene glycol monomethyl ether and 1.5 g of p-toluenesulfonic acid were added, and the mixture was stirred at room temperature (23 to 25 ° C.) for 3 hours for hydrolysis. The obtained copolymer solution was dropped into 2,000 g of water to solidify, and the resulting white powder was filtered and dried overnight at 50 ° C. under reduced pressure.
The obtained copolymer had Mw of 16,000 and Mw / Mn of 1.3. As a result of ¹³ C-NMR analysis, copolymerization moles of p-hydroxystyrene, styrene and pt-butoxystyrene were obtained. The ratio was 72: 5: 23. This copolymer is referred to as “acid-labile group-containing resin (B-4)”.

Examples 1-10 and Comparative Examples 1-4
Each component shown in Table 1 (where parts are based on weight standards) was mixed in the amounts shown in Table 1 to obtain a homogeneous solution, and then filtered through a membrane filter having a pore size of 200 nm to prepare a composition solution. Next, each composition solution was spin-coated on a silicon wafer in Tokyo Electron Co., Ltd. clean track ACT-8, and then PB was performed under the conditions shown in Table 2 to form a resist film having a thickness of 200 nm. .
Subsequently, the resist film was irradiated with an electron beam using a simple electron beam drawing apparatus (manufactured by Hitachi, model “HL800D”, output: 50 KeV, current density: 5.0 ampere / cm ² ). PEB was performed under the conditions shown in Table 2. Thereafter, a 2.38 wt% tetramethylammonium hydroxide aqueous solution was used and developed by the paddle method at 23 ° C. for 1 minute, and then washed with pure water and dried to form a resist pattern. Table 2 shows the evaluation results of each resist.

The material used for each Example and comparative example except the said acid dissociable group containing resin (B) is shown below.
Acid generator (A):
A-1: N- (trifluoromethylsulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide A-2: 2,4,6 trimethylphenyldiphenylsulfonium 4-tri Fluoromethylbenzenesulfonate A-3: Bis (cyclohexylsulfonyl) diazomethane A-4: Diphenyliodonium trifluoromethanesulfonate A-5: Triphenylsulfonium trifluoromethanesulfonate acid proliferator (C):
C-1: cis-3- (p-toluenesulfonyloxy) -2-pinanol C-2: 4,4′-isopropylidenebiscyclohexyl bis (p-toluenesulfonate)
C-3: 1,4-bis (3,3,3-trifluoroethanesulfonyloxy) cyclohexane photosensitive basic compound (D):
D-1: Triphenylsulfonium salicylate D-2: Triphenylsulfonium hydroxide D-3: Diphenyliodonium hydroxide D-4: Diphenyliodonium salicylate diffusion controller (E):
E-1: 2-phenylbenzimidazole E-2: Nt-butoxycarbonyl-2-phenylbenzimidazole E-3: tri-n-octylamine E-4: 4-phenylpyridine solvent (F):
F-1: Ethyl lactate F-2: Ethyl 3-ethoxypropionate F-3: Propylene glycol monomethyl ether acetate

Here, each resist was evaluated in the following manner.
(1) Sensitivity (L / S):
When the resist film formed on the silicon wafer was exposed to light, immediately subjected to PEB, then developed with alkali, washed with water and dried to form a resist pattern, the lines in Examples 1 to 10 and Comparative Examples 1 to 4 The exposure amount for forming a line-and-space pattern (1L1S) having a width of 130 nm with a one-to-one line width was defined as the optimum exposure amount, and the sensitivity was evaluated based on the optimum exposure amount.
(2) Resolution (L / S):
For the line-and-space pattern (1L1S), the minimum line width (nm) of the line pattern resolved with the optimum exposure dose was taken as the resolution.
(3) LWR:
A line pattern of a line-and-space pattern (1L1S) having a designed line width of 130 nm was observed with a scanning electron microscope for semiconductor S-9220 Hitachi high-resolution FEB measuring device. FIG. 1 shows a schematic diagram of the pattern (unevenness is exaggerated from the actual value). 1A is a plan view, and FIG. 1B is a cross-sectional view of a pattern 2 formed on the silicon wafer 1. For the shape observed in each example, when the difference ΔCD between the line width and the design line width 130 nm at the most conspicuous unevenness generated along the lateral surface 2a of the line pattern is measured, and the ΔCD is less than 10 nm The nano edge roughness was evaluated as “◯”, and the nano edge roughness was evaluated as “×” when 10 nm or more.

The radiation-sensitive resin composition of the present invention contains an acid proliferating agent and a photosensitive basic compound, has excellent line-and-space pattern resolution at the time of pattern formation of the radiation-sensitive resin composition, and is nano-edge Since it has excellent roughness, it is useful for forming fine patterns by EB, EUV, and X-rays. Therefore, the radiation-sensitive resin composition of the present invention is extremely useful as a chemically amplified resist for manufacturing semiconductor devices, which is expected to be further miniaturized from now on.

It is a schematic diagram of a line pattern for LWR measurement.

Explanation of symbols

1 Substrate 2 Resist pattern

Claims (3)

  A radiation-sensitive acid generator (A) that generates an acid when irradiated with radiation, and an acid-dissociable group-containing resin (B) that is insoluble in alkali or hardly soluble in alkali and easily soluble in alkali by the action of an acid; A positive-type sensation comprising: an acid proliferating agent (C) that generates an acid in a chain reaction by the action of an acid; and a photosensitive basic compound (D) that loses basicity when irradiated with radiation. Radiation resin composition. The acid proliferating agent (C) is a compound in which a sulfonate group represented by the following formula (1) is bonded to a carbon atom forming a carbocyclic skeleton directly or via a divalent organic group. The positive radiation sensitive resin composition according to claim 1.

(Wherein R ¹ represents a monovalent organic group) The positive radiation sensitive resin composition according to claim 1, wherein the photosensitive basic compound (D) is a compound represented by the following formula (2).

(Wherein M ⁺ represents an iodonium compound or sulfonium compound which may have a substituent, X ⁻ represents OH ⁻ , R ² —OH ⁻ , R ² —COO ⁻ (R ² represents a monovalent organic group). , Respectively)

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