JP2007183678A - Substrate for liquid crystal display, liquid crystal display having the same and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate for a liquid crystal display which makes it possible to provide a display having high luminance and preferable display characteristics to be used in display sections of information apparatuses and the like, a liquid crystal display having the same, and a method of manufacturing the same. <P>SOLUTION: Each pixel is defined by gate bus lines 25 extending in the horizontal direction and drain bus lines 26 extending in the vertical direction. TFTs are formed in the vicinity of intersections between the bus lines 25, 26, and resin overlap sections 32 for shielding the TFTs from light are formed above the same. No black matrix is formed on a common electrode substrate which is provided in a face-to-face relationship with a TFT substrate 8, and the bus lines 25, 26 and the resin overlap sections 32 formed on the TFT substrate 8 function as a black matrix. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a substrate for a liquid crystal display device that constitutes a liquid crystal display device used in a display section of information equipment or the like, a liquid crystal display device including the same, and a method for manufacturing the same.

  A liquid crystal display device generally has two substrates provided with transparent electrodes and a liquid crystal sealed between the two substrates. A desired display can be obtained by applying a voltage between the transparent electrodes to drive the liquid crystal and controlling the light transmittance. An active matrix liquid crystal display device includes a TFT substrate on which a thin film transistor (TFT) for switching each pixel is formed and a common electrode substrate on which a common electrode is formed. In recent years, the demand for liquid crystal display devices has increased, and the demand for liquid crystal display devices has also diversified. In particular, improvement in viewing angle characteristics and display quality is strongly demanded, and a VA (Vertically Aligned) mode (vertical alignment type) liquid crystal display device is promising as means for realizing this.

  The VA mode liquid crystal display device is composed of two substrates whose opposite surfaces are subjected to vertical alignment processing, and a liquid crystal having negative dielectric anisotropy sealed between the two substrates. The liquid crystal molecules of the liquid crystal have the property of homeotropic alignment, and are aligned substantially perpendicular to the substrate surface when no voltage is applied between both electrodes. Further, when a predetermined voltage is applied between both electrodes, the substrate is oriented substantially horizontally on the substrate surface, and when a voltage smaller than the voltage is applied, the substrate is oriented obliquely with respect to the substrate surface.

  From the viewpoint of improving the viewing angle characteristics of liquid crystal display devices, MVA (Multi-domain Vertical Alignment) type liquid crystal display devices have recently attracted attention. In the MVA method, the inside of a pixel is divided into a plurality of regions using alignment restricting structures (domain restricting means) such as linear protrusions and slits provided on both substrates, and the tilt direction of the liquid crystal molecules is divided for each region. The orientation division is performed differently.

  FIG. 35 shows a configuration of an MVA liquid crystal display device, and shows an arrangement of linear protrusions formed as alignment regulating structures on both substrates. FIG. 35 shows three pixels of R (red), G (green), and B (blue). As shown in FIG. 35, linear protrusions 104 are formed on the TFT substrate 108, and linear protrusions 106 are formed on the common electrode substrate 110. The linear protrusions 104 and 106 are formed obliquely with respect to the pixel. Each of the R, G, and B pixel regions is defined by a light-shielding film (BM; Black Matrix) 102 formed on the common electrode substrate 110. Further, the BM 102 shields the storage capacitor bus line that crosses almost the center of each pixel and the storage capacitor electrode (both not shown) on the storage capacitor bus line.

  FIG. 36 is a cross-sectional view of the liquid crystal display device taken along line XX in FIG. As shown in FIG. 36, the TFT substrate 108 has a pixel electrode 114 formed for each pixel on the glass substrate 112. Note that illustration of an insulating film, a drain bus line, a protective film, and the like formed on the glass substrate 112 is omitted. A linear protrusion 104 is formed on the pixel electrode 114. A vertical alignment film 116 is formed on the entire surface of the pixel electrode 114 and the linear protrusion 104. On the other hand, the common electrode substrate 110 has a BM 102 formed on a glass substrate 112. In addition, resin color filter (CF) layers R, G, and B (only G and B are shown in FIG. 36) are formed for each pixel region defined by the BM 102 on the glass substrate 112. A common electrode 118 is formed on the resin CF layers R, G, and B, and a linear protrusion 106 is formed on the common electrode 118. Further, a vertical alignment film 116 is formed on the entire surface of the common electrode 118 and the linear protrusion 106. Between the TFT substrate 108 and the common electrode substrate 110, a spherical spacer 122 made of plastic or glass or the like that holds the distance (cell gap) between the substrates 108 and 110, and the liquid crystal LC are sealed.

  FIG. 37 is a cross-sectional view of the liquid crystal display device taken along the line YY of FIG. 35, and shows the state of the liquid crystal LC when no voltage is applied. As shown in FIG. 37, the liquid crystal molecules (shown as cylinders in the figure) are aligned substantially perpendicular to the vertical alignment film 116 on both substrates 108 and 110. Therefore, the liquid crystal molecules in the region where the linear protrusions 104 and 106 are formed are aligned substantially perpendicular to the surface of the linear protrusions 104 and 106, and are slightly inclined with respect to the normal lines of both the substrates 108 and 110. Oriented. Since a polarizing plate (not shown) is arranged in a crossed Nicol state outside both the substrates 108 and 110, black display can be obtained when no voltage is applied.

  FIG. 38 is a cross-sectional view of the liquid crystal display device taken along the line YY of FIG. 35 as in FIG. 37, and shows the state of the liquid crystal LC when a voltage is applied. A broken line in the figure indicates an electric force line between the pixel electrode 114 and the common electrode 118. As shown in FIG. 38, when a voltage is applied between the pixel electrode 114 and the common electrode 118, the electric field is distorted in the vicinity of the linear protrusions 104 and 106 made of a dielectric. Thus, the direction in which the liquid crystal molecules having negative dielectric anisotropy are tilted is regulated, and gradation display can be obtained by controlling the tilt angle according to the electric field strength.

  At this time, the liquid crystal molecules in the vicinity of the linear protrusions 104 and 106 are linear protrusions with the linear protrusions 104 and 106 as a boundary when the linear protrusions 104 and 106 are linearly provided as shown in FIG. It falls in two directions orthogonal to the direction in which 104 and 106 extend. Since the liquid crystal molecules in the vicinity of the linear protrusions 104 and 106 are slightly tilted from the direction perpendicular to both the substrates 108 and 110 even when no voltage is applied, the liquid crystal molecules fall quickly in response to the electric field strength. As a result, the direction in which the surrounding liquid crystal molecules sequentially fall in accordance with the behavior thereof is determined, and the liquid crystal molecules are inclined according to the electric field strength, so that alignment division with the linear protrusions 104 and 106 as a boundary is realized.

  FIG. 39 is a cross-sectional view of the liquid crystal display device shown in FIG. 35 in which slits 120 are formed instead of the linear protrusions 104 taken along line YY, and shows a state when no voltage is applied. As shown in FIG. 39, the slit 120 of the alignment regulating structure is formed by removing the pixel electrode 114. The liquid crystal molecules are aligned substantially perpendicular to the vertical alignment film 116 on both the substrates 108 and 110 in the same manner as the liquid crystal molecules shown in FIG.

  FIG. 40 is a cross-sectional view of the liquid crystal display device taken along line YY of FIG. 35 as in FIG. 39, and shows the state of the liquid crystal LC when a voltage is applied. As shown in FIG. 40, in the region where the slit 120 is formed, electric lines of force are formed which are substantially the same as the region where the linear protrusion 104 shown in FIG. 38 is formed. Thereby, the alignment division with the linear protrusion 106 and the slit 120 as a boundary is realized. 37 to 40, the spherical spacer 122 that holds the cell gap is not shown.

  41 is a cross-sectional view of the vicinity of the drain bus line of the liquid crystal display device taken along line ZZ in FIG. As shown in FIG. 41, the TFT substrate 108 has an insulating film 124 on the entire surface of the glass substrate 112. A drain bus line 126 is formed on the insulating film 124. A protective film 128 is formed on the entire surface of the drain bus line 126. A pixel electrode 114 is formed on the protective film 128 for each pixel. The BM 102 is formed on the common electrode substrate 110 disposed so as to shield light from a region (pixel region end) where the pixel electrode 114 is not formed on the TFT substrate 108.

  By the way, the conventional MVA liquid crystal display device has a drawback that the display becomes dark because of low panel transmittance. Although there are various factors in the low panel transmittance, the aperture ratio is reduced due to the bonding displacement between the TFT substrate 108 and the common electrode substrate 110, and the alignment regulating structure (the linear protrusions 104 and 106 or the slit 120). ) Due to a decrease in the aperture ratio, disorder of the orientation of the liquid crystal near the spherical spacer 122, and the like.

  The MVA type liquid crystal display device has greatly improved viewing angle characteristics, and is excellent for a monitor of a personal computer in which high brightness is relatively unimportant. However, in order to use as a display unit or a television of a DVD (Digital Versatile Disk) playback apparatus in which high brightness is important, a special backlight that brightens or aligns the light emission direction to improve the brightness in a specific direction. It is necessary to use a sheet. For this reason, the problem that manufacturing cost increases has arisen.

  In addition, the formation of linear protrusions, insulating layers, and the like as the alignment regulating structure increases the number of manufacturing steps as compared with a normal substrate manufacturing step, resulting in an increase in manufacturing cost.

  An object of the present invention is to provide a substrate for a liquid crystal display device from which a display device having high luminance and good display characteristics can be obtained, a liquid crystal display device including the same, and a method for manufacturing the same.

  The object is to cross a substrate that sandwiches a liquid crystal having negative dielectric anisotropy together with a counter substrate disposed opposite to the substrate, a plurality of gate bus lines formed on the substrate, and the gate bus line. A plurality of drain bus lines formed on the substrate; a pixel region defined by the gate bus line and the drain bus line; a thin film transistor formed for each pixel region; and a pixel region formed for each pixel region. A liquid crystal display comprising: a resin color filter layer formed; a pixel electrode formed for each of the pixel regions; and an alignment regulating structure formed on the substrate for regulating the alignment of the liquid crystal. This is achieved by the device substrate.

  Further, the object is formed for each of the first substrate, a plurality of bus lines crossing each other and formed on the first substrate, a pixel region defined by the bus lines, and the pixel region. A thin film transistor substrate having a thin film transistor, a resin color filter layer formed for each pixel region, and a pixel electrode formed for each pixel region; and a first thin film transistor having a thickness or material different from that of the first substrate. 2 and a common electrode formed on the second substrate, the common electrode substrate disposed opposite to the first substrate, and between the thin film transistor substrate and the common electrode substrate This is achieved by a liquid crystal display device having a sealed liquid crystal.

  Further, the object is formed on the substrate across the gate bus line, a substrate for sandwiching the liquid crystal together with the opposing substrate arranged opposite to each other, a plurality of gate bus lines formed on the substrate, and the gate bus line. A plurality of drain bus lines; a pixel region defined by the gate bus line and the drain bus line; a thin film transistor formed for each pixel region; and a resin color filter layer formed for each pixel region; A liquid crystal display substrate comprising: a pixel electrode formed for each pixel region; and a resin layer formed to cover the source / drain electrodes of the thin film transistor and the drain bus line. Achieved.

  According to the present invention, a liquid crystal display device having high luminance and good display characteristics can be obtained.

[First Embodiment]
A substrate for a liquid crystal display device according to a first embodiment of the present invention, a liquid crystal display device including the same, and a method for manufacturing the same will be described with reference to FIGS. First, the first basic configuration of the present embodiment will be described with reference to FIGS. FIG. 1 shows three pixels of R, G, and B on the TFT substrate 8. As shown in FIG. 1, each pixel is defined by a gate bus line 25 extending in the horizontal direction in the drawing and a drain bus line 26 extending in the vertical direction in the drawing. A TFT (not shown) is formed in the vicinity of the intersection position of the bus lines 25 and 26. In addition, a resin overlap portion 32 in which at least two of the resin CF layers R, G, and B are overlapped is formed on the upper portion in order to block light incident on the TFT. In the liquid crystal display device according to the present embodiment, the BM is not formed on the common electrode substrate disposed to face the TFT substrate 8, and the bus lines 25 and 26 formed on the substrate TFT substrate 8 and the resin overlap portion are formed. 32 is adapted to perform the BM function. Note that light shielding is possible even if only one of the resin CF layers R, G, and B is formed on the TFT instead of the resin overlap layer 32 shown in FIG.

  FIG. 2 is a diagram showing a first basic configuration of a substrate for a liquid crystal display device according to the present embodiment and a liquid crystal display device having the substrate, and a cross section of the liquid crystal display device taken along line AA in FIG. Show. As shown in FIG. 2, the TFT substrate 8 has an insulating film 24 on almost the entire surface of the transparent glass substrate 12. A drain bus line 26 is formed on the insulating film 24. Resin CF layers R, G, and B (only G and B are shown in FIG. 2) are formed on the drain bus line 26 (CF-on-TFT structure). A pixel electrode 14 is formed for each pixel on the resin CF layers R, G, and B. On the other hand, the common electrode substrate 10 disposed to face the TFT substrate 8 has a common electrode 18 on the entire surface of the glass substrate 12. BM is not formed on the common electrode substrate 10. A vertical alignment film (not shown) is formed on the entire surface of the pixel electrode 14 and the common electrode 18. A liquid crystal layer LC is sealed between the TFT substrate 8 and the common electrode substrate 10.

  In the conventional liquid crystal display device shown in FIG. 41, when the pixel electrode 114 is formed so as to extend over the drain bus line 126, the protective film 128 is sandwiched between the pixel electrode 114 and the drain bus line 126 as a dielectric. Capacity is configured. Therefore, it is necessary to provide a predetermined gap between the pixel electrode 114 and the drain bus line 126 in the direction along the substrate surface.

  In contrast, in the liquid crystal display device according to the present embodiment shown in FIG. 2, resin CF layers R, G, and B are formed between the pixel electrode 114 and the drain bus line 126. Since the resin CF layers R, G, and B are applied and formed using a spin coat method or the like, the resin CF layers R, G, and B are easily formed thicker than the protective film 128 formed using a CVD (Chemical Vapor Deposition) method. Can do. Accordingly, the capacitance generated between the drain bus line 26 and the pixel electrode 14 can be reduced. For this reason, since the pixel electrode 14 can be formed on the drain bus line 26 when viewed in the direction perpendicular to the substrate surface, it is not necessary to form a BM on the common electrode substrate 10 and the aperture ratio is improved. . Further, since the drain bus line 26 functions as a BM and there is no need to dispose the BM on the common electrode substrate 10, the manufacturing process is reduced. Further, the aperture ratio does not decrease due to the bonding deviation between the TFT substrate 8 and the common electrode substrate 10.

  The CF-on-TFT structure shown in FIG. 2 is a normally white mode liquid crystal display in a TN mode in which light leakage occurs during black display unless the end of the pixel electrode 14 is overlapped with the drain bus line 26. Suitable for equipment. However, in order to reduce the capacitance formed in the overlapping region between the pixel electrode 14 and the drain bus line 26, the resin CF layers R, G, and B (organic insulating films) must be formed to be considerably thick. For this reason, the CF-on-TFT structure has a problem that the manufacturing process becomes more complicated than when the resin CF layers R, G, and B are formed on the counter substrate side. Further, in order to ensure light shielding by the drain bus line 26 (bus line light shielding), the resin CF layers R, G, and B end portions must be accurately aligned on the drain bus line 26. Therefore, when the line width of the drain bus line is reduced, there is a possibility that sufficient alignment cannot be performed by the proximity (proximity) exposure apparatus normally used for forming the resin CF layers R, G, and B. On the other hand, if a stepper or a mirror projection type aligner with excellent alignment accuracy is used, the manufacturing cost of the CF-on-TFT structure increases.

  FIG. 3 shows a modification of the first basic configuration shown in FIG. As shown in FIG. 3, the pixel electrode 14 is positioned in the substrate surface direction between the end of the pixel electrode 14 and the end of the drain bus line 26 so as to overlap the drain bus line 26 when viewed in the direction perpendicular to the substrate surface. Are formed with a predetermined gap. The end portion of the resin CF layer G is formed on the drain bus line 26, but the end portion of the resin CF layer B is formed away from the drain bus line 26 due to patterning deviation. However, in the case of a normally black mode liquid crystal display device that displays black when no voltage is applied, for example, the MVA method, the pixel electrode 14 is formed so as not to overlap the drain bus line 26 with a predetermined gap. However, since the gap region is black when no voltage is applied, the problem of light leakage does not occur. Further, since the overlapping region between the pixel electrode 14 and the drain bus line 26 is not formed, no capacitance is formed, and therefore the film thickness of the resin CF layers R, G, and B can be arbitrarily reduced. . Further, as shown in FIG. 3, even if the end portions of the resin CF layers R, G, and B are formed off the drain bus line 26, the end portions of the resin CF layers R, G, and B are drained from the end portions of the pixel electrodes 14. As long as it is on the bus line 26 side, no light leakage occurs. For this reason, the alignment margin at the time of patterning the resin CF layers R, G, and B can be increased, and a CF-on-TFT structure can be obtained at a low cost by using a normal proximity exposure apparatus. Become.

  FIG. 4 shows a second basic configuration of the liquid crystal display device substrate and the liquid crystal display device including the same according to the present embodiment, and shows a cross section of the liquid crystal display device taken along line BB in FIG. ing. As shown in FIG. 4, the liquid crystal display device has a linear protrusion 28 of an alignment regulating structure formed on the pixel electrode 14. Further, in the vicinity of the intersection position of the gate bus line 25 and the drain bus line 26, resin CF layers R, B, and G are laminated in this order to form a resin overlap portion 32 that functions as a BM. On the resin overlap portion 32, a protrusion 29 that does not have a function as an alignment regulating structure is formed. The protrusions 29 are simultaneously formed of the same forming material as the linear protrusions 28. The resin overlapping portions 32 and the protrusions 29 of the respective resin layers constituting the TFT substrate 8 are laminated to form a columnar spacer 30 that holds a cell gap with the common electrode substrate 10 that is arranged to be opposed to the TFT substrate 8.

  In the second basic configuration of the present embodiment, a columnar spacer is formed by laminating a resin CF layer or the like constituting the TFT substrate 8. By doing so, the manufacturing cost can be reduced because the manufacturing process is reduced. In addition, since light leakage and disorder of orientation occurring in the vicinity of a spherical or other scattering type spacer can be reduced, good display characteristics can be obtained.

  FIG. 5 shows a third basic configuration of the liquid crystal display device substrate according to the present embodiment. In the frame area 40 of the common electrode substrate 10, a frame pattern 34 that shields the end of the display area 38 is formed. Further, on the outside of the frame region 40, for example, a cross-shaped alignment mark used for bonding to the opposing TFT substrate 8 (not shown in FIGS. 5 and 6) is formed.

  FIG. 6A shows an enlarged region α of the common electrode substrate 10 shown in FIG. FIG. 6B shows a cross section of the common electrode substrate 10 cut along the line CC in FIG. As shown in FIGS. 6A and 6B, the common electrode 18 is formed in the display region 38 on the glass substrate 12 and the frame region 40 at the end of the display region 38. On the common electrode 18 in the display area 38, linear protrusions 28 are formed with a black resist (black resin) or the like obliquely with respect to the end of the display area 38, for example. On the common electrode 18 in the frame region 40, a frame pattern 34 for shielding the end of the display region 38 is simultaneously formed with the same material as that for the linear protrusions 28. In addition, on the left side of the frame region 40 in the figure, an alignment mark 36 is simultaneously formed of the same forming material as the linear protrusion 28.

  According to the third basic configuration of the present embodiment, since the frame pattern 34 and the alignment mark 36 are formed simultaneously with the same forming material as the alignment regulating structure, the manufacturing process of the common electrode substrate 10 is reduced. Manufacturing cost can be reduced.

Hereinafter, the substrate for a liquid crystal display device according to the present embodiment and the liquid crystal display device including the substrate will be described more specifically with reference to Examples 1-1 to 1-3.
(Example 1-1)
First, a substrate for a liquid crystal display device according to Example 1-1, a liquid crystal display device including the same, and a manufacturing method thereof will be described with reference to FIGS. FIG. 7 is a conceptual diagram showing a state in which the TFT substrate 8 and the common electrode substrate 10 shown in FIG. 1 are bonded together, and shows three pixels of R, G, and B. The liquid crystal display device according to this embodiment is, for example, an MVA type liquid crystal display device, and FIG. 7 also shows the arrangement of alignment regulating structures. On the common electrode substrate 10, linear protrusions 28 are formed obliquely with respect to the end of the pixel region. On the TFT substrate 8, a slit 20 and a fine slit 21 extending from the slit 20 substantially orthogonal to the extending direction of the slit 20 are formed obliquely with respect to the end of the pixel region. A plurality of the fine slits 21 are formed at a narrow interval compared to the interval between the slit 20 and the linear protrusion 28. Liquid crystal molecules having negative dielectric anisotropy are aligned so as to be parallel to the extending direction of the alignment regulating structure when the alignment regulating structures are formed at a relatively narrow interval. For this reason, the liquid crystal molecules are more strongly regulated by forming the fine slits 21 orthogonal to the slits 20.

FIG. 8 shows a cross section of the liquid crystal display device taken along line DD in FIG. As shown in FIG. 8, the TFT substrate 8 has an insulating film 24 on the entire surface of the glass substrate 12. A drain bus line 26 is formed on the insulating film 24. Resin CF layers R, B, and G (only G and B are shown in FIG. 8) are formed on the drain bus line 26. On the resin CF layers R, B, and G, a pixel electrode 14 and a slit 20 from which the pixel electrode 14 is partially removed are formed. In addition, illustration of the fine slit 21 is abbreviate | omitted in FIG. On the other hand, the common electrode substrate 10 has a common electrode 18 on the entire surface of the glass substrate 12. A linear protrusion 28 is formed on the common electrode 18. A vertical alignment film (not shown) is formed on the pixel electrode 14, the common electrode 18, and the linear protrusion 28. A liquid crystal LC having negative dielectric anisotropy is sealed between the TFT substrate 8 and the common electrode substrate 10.

  FIG. 9 shows a configuration in the vicinity of the TFT of the TFT substrate 8 according to this embodiment. As shown in FIG. 9, the TFT substrate 8 intersects a plurality of gate bus lines 25 (only one is shown in FIG. 9) extending in the left-right direction in the drawing on the glass substrate 12 and the gate bus lines 25. A plurality of drain bus lines 26 (three are shown in FIG. 9) extending in the vertical direction in the figure. A TFT 42 is formed in the vicinity of the crossing position of both bus lines 25 and 26. The TFT 42 includes a drain electrode 44 branched from the drain bus line 26, a source electrode 46 disposed facing the drain electrode 44 with a predetermined gap, and overlaps the drain electrode 44 and the source electrode 46 in the gate bus line 25. Part (gate electrode). On the gate electrode, an operating semiconductor layer 52 and an overlying channel protective film 48 are formed. The gate bus line 25 and the drain bus line 26 define a pixel region, and resin CF layers R, G, and B are formed in each pixel region. A pixel electrode 14 is formed in each pixel region. The left and right ends of the pixel electrode 14 in the figure are formed so as to overlap the end of the drain bus line 26 when viewed in the direction perpendicular to the substrate surface. In FIG. 9, the illustration of the slit is omitted.

  10A shows a cross section of the TFT substrate 8 cut along line EE in FIG. 9, and FIG. 10B shows a cross section of the TFT substrate 8 cut along line FF in FIG. Show. As shown in FIGS. 10A and 10B, resin CF layers R, G, and B are formed on the TFT 42 and the drain bus line 26. Pixel electrodes 14 are formed on the resin CF layers R, G, and B. The end of the pixel electrode 14 is formed so as to overlap the end of the drain bus line 26 when viewed in the direction perpendicular to the substrate surface.

  Next, a method for manufacturing a substrate for a liquid crystal display device according to the present embodiment will be described with reference to FIGS. 11 to 16 are process cross-sectional views illustrating a method for manufacturing a substrate for a liquid crystal display device according to this example. 11 to 16, (a) shows a cross section of the TFT substrate 8 cut along the line EE shown in FIG. 9, and (b) shows the TFT substrate 8 cut along the line FF shown in FIG. The cross section of is shown. First, as shown in FIGS. 11A and 11B, for example, an aluminum (Al) layer having a thickness of 100 nm and a titanium (Ti) layer having a thickness of 50 nm are formed in this order on the entire surface of the glass substrate 12. Then, the gate bus line 25 is formed by patterning. The patterning is performed using a photolithography method in which a predetermined resist pattern is formed on the patterning layer, the patterning layer is etched using the obtained resist pattern as an etching mask, and the resist pattern is peeled off.

Next, as shown in FIGS. 12A and 12B, for example, a silicon nitride film (SiN film) having a thickness of 350 nm, an a-Si layer 52 ′ having a thickness of 30 nm, and a SiN film having a thickness of 120 nm are continuously formed. Film. Next, a channel protective film 48 serving as an etching stopper is formed in a self-aligned manner by patterning by back exposure. Next, as shown in FIGS. 13A and 13B, for example, an n ⁺ a-Si layer having a thickness of 30 nm, a Ti layer having a thickness of 20 nm, an Al layer having a thickness of 75 nm, and a Ti layer having a thickness of 40 nm are formed. A drain electrode 44, a source electrode 46, and a drain bus line 26 are formed by patterning using the channel protective film 48 as an etching stopper. The TFT 42 is completed through the above steps.

  Next, as shown in FIGS. 14A and 14B, a photosensitive pigment dispersion type R resist is applied to a film thickness of, for example, 3.0 μm and patterned. Thereafter, post-baking is performed to form a resin CF layer R having a contact hole 50 opened on the source electrode 46 in a predetermined pixel region.

  Next, as shown in FIGS. 15A and 15B, a photosensitive pigment dispersion type B resist is applied to a film thickness of, for example, 3.0 μm and patterned. Thereafter, post-baking is performed to form the resin CF layer B in a predetermined pixel region. Similarly, as shown in FIGS. 16A and 16B, a resin CF layer G is formed in a predetermined pixel region. Next, for example, a 70 nm-thick ITO film is formed and patterned on the entire surface, and the pixel electrode 14 is formed so that the left and right ends in the figure overlap with the end of the drain bus line 26 when viewed in the direction perpendicular to the substrate surface. . Through the above steps, the TFT substrate 8 shown in FIGS. 9 and 10A and 10B is completed.

  In this embodiment, the resin CF layers R, G, and B are formed directly on the source / drain formation layers such as the drain electrode 44, the source electrode 46, and the drain bus line 26. However, the resin CF layers R, G, and B are formed on the source / drain formation layers. A protective film may be formed, and the resin CF layers R, G, and B may be formed on the protective film. Further, a protective film may be formed on the resin CF layers R, G, and B, and the pixel electrode 14 may be formed on the protective film. Of course, the formation materials and manufacturing processes of the TFT 42 and the resin CF layers R, G, and B may be other than those described above.

  In this embodiment, as the alignment regulating structure, the slit 20 and the fine slit 21 are formed on the TFT substrate 8 and the linear protrusion 28 is formed on the common electrode substrate 10, but other combinations are used. Also good. According to the present embodiment, the same effect as that of the first basic configuration can be obtained.

(Example 1-2)
Next, a liquid crystal display device substrate according to Example 1-2 and a liquid crystal display device including the same will be described with reference to FIGS. 17, 18, and 42. FIG. 17 is a cross-sectional view showing the configuration of the liquid crystal display device according to this embodiment, and shows the same cross section as FIG. As shown in FIG. 17, the liquid crystal display device according to this embodiment is formed on the slit 20 of the TFT substrate 8 and is a dielectric layer 56 serving as an alignment regulating structure that improves the response characteristics of liquid crystal molecules in halftone. have. The dielectric layer 56 is formed of a photoresist or the like.

  FIG. 18 is a cross-sectional view showing the configuration of the liquid crystal display device according to this embodiment, and shows the same cross section as FIG. As shown in FIG. 18, in the liquid crystal display device according to this embodiment, resin CF layers R, B, and G are laminated in this order in the vicinity of the intersection position of the gate bus line 25 and the drain bus line 26 of the TFT substrate 8. Yes. Further, on the common electrode 18 of the common electrode substrate 10, a protrusion 29 that does not function as an alignment regulating structure is formed. The columnar spacer 30 that holds the cell gap is configured by the gate bus line 25, the insulating film 24, the drain bus line 26 and the resin CF layers R, G, and B on the TFT substrate 8 and the protrusion 29 on the common electrode substrate 10. is doing.

  Note that the columnar spacer 30 is not limited to the above-described configuration, and may be configured of other layers. For example, a resin layer formed simultaneously on the resin CF layer B with the same material as that of the dielectric layer 56 may be used. In that case, the protrusion 29 on the common electrode substrate 10 side may not be formed. Of course, the formation materials and manufacturing processes of the TFT 42 and the resin CF layers R, G, B, etc. may be other than those described above. The alignment regulating structures formed on the TFT substrate 8 and the common electrode substrate 10 may be in other combinations. According to the present embodiment, the same effect as that of the second basic configuration can be obtained.

  FIG. 42 is a cross-sectional view showing a modification of the configuration of the liquid crystal display device according to this embodiment, and shows the same cross section as FIG. As shown in FIG. 42, the liquid crystal display device according to the present modified example has a columnar spacer formed only by laminating resin CF layers R, B, and G in the vicinity of the intersection of the gate bus line 25 and the drain bus line 26 of the TFT substrate 8. 30. Thus, the columnar spacers 30 may be formed without using the protrusions 29 of the common electrode substrate 10 and the dielectric layer 56 on the TFT substrate 8 side.

This configuration is suitable for an MVA-LCD having a CF-on-TFT structure in which an alignment regulating structure different from the protrusion is formed. For example, in a TN mode LCD, in general, in order to form a columnar spacer with a laminated structure such as a resin CF layer, the overlay accuracy and panel bonding accuracy when overlaying the resin CF layer, or a sufficient layer height is required. Considering the installation area required for obtaining, the sectional area of the resin CF layer for the columnar spacer has to be increased, which causes a problem that the aperture ratio is lowered.
On the other hand, when the columnar spacer is formed by overlapping the resin CF layer in the CF-on-TFT structure, it is not necessary to consider the panel bonding accuracy. However, it is necessary to shield the liquid crystal alignment defect in the vicinity of the columnar spacer, and the aperture ratio decreases or BM is necessary for this light shielding.
On the other hand, the MVA-LCD with the CF-on-TFT structure is a normally black mode. When the columnar spacer is formed by overlapping the resin CF layer, the portion where the pixel electrode does not exist is always displayed in black. It is not necessary to form it, and it is possible to suppress a decrease in aperture ratio. Further, since it is not necessary to consider panel bonding accuracy and liquid crystal alignment failure in the vicinity of the columnar spacer, the columnar spacer can be formed while suppressing a decrease in the aperture ratio.

(Example 1-3)
Next, a substrate for a liquid crystal display device according to Example 1-3, a liquid crystal display device including the same, and a manufacturing method thereof will be described with reference to FIGS. FIG. 19 shows the configuration of the substrate for a liquid crystal display device according to this embodiment, which corresponds to FIG. FIG. 20 shows a cross section of the substrate for a liquid crystal display device taken along the line GG in FIG. 19, and corresponds to FIG. As shown in FIGS. 19 and 20, the common electrode 18 is formed on the glass substrate 12 in the display region 38 and the frame region 40 of the common electrode substrate 10. On the common electrode 18 in the display area 38, a linear protrusion 28 is formed obliquely with respect to the end of the display area 38. The linear protrusions 28 are formed of a light shielding metal chromium (Cr) on the lower layer and a resist layer used for Cr patterning on the upper layer. In the frame area 40, a frame pattern 34 for shielding the end of the display area 38 is formed. Further, on the left side of the frame region 40 in the figure, a cross-shaped alignment mark 36 used for bonding to the opposing TFT substrate 8 (not shown in FIGS. 19 and 20) is formed on the glass substrate 10. Has been. The frame pattern 34 and the alignment mark 36 are simultaneously formed of the same material as that of the linear protrusion 28.

  Next, a method for manufacturing a substrate for a liquid crystal display device according to the present embodiment will be described with reference to FIGS. First, as shown in FIG. 21, for example, a 100 nm-thick ITO film is formed on the entire surface of the glass substrate 12 and patterned to form the common electrode 18. Next, as shown in FIG. 22, for example, a 100 nm-thickness Cr film is formed on the entire surface. Next, a resist is applied on the entire surface, exposed, and developed to form a predetermined resist pattern. Next, Cr is etched using the resist pattern as an etching mask to form the lower layer of the linear protrusion 28, the frame pattern 34, and the alignment mark 36. Next, the resist pattern is cured by post-baking to form the upper layer of the linear protrusions 28. Through the above steps, the common electrode substrate 10 according to this embodiment is completed.

In this embodiment, the frame region 40 is shielded from light, or a light-shieldable metal layer such as Cr is used to visually recognize the alignment mark 36, and a resist is used to form the linear protrusions 28. As shown in FIGS. 5 and 6, if a black resist for forming a light shielding film is used for the resist layer, a light shielding metal layer becomes unnecessary. The MVA type liquid crystal display device is in a normally black mode, and an OD (Optical Density) value of about 2.0 is sufficient for the black resist.
As described above, according to the present embodiment, it is possible to obtain a liquid crystal display device with high luminance and good display characteristics.

[Second Embodiment]
A substrate for a liquid crystal display device according to a second embodiment of the present invention, a liquid crystal display device including the same, and a manufacturing method thereof will be described with reference to FIGS.
Color liquid crystal display devices are used in displays such as monitors, notebook PCs, and PDAs (Personal Digital Assistants), and in recent years, further weight reduction is desired. In general, in a liquid crystal display device, a glass substrate has a larger weight ratio than other members. For example, a glass substrate having a thickness (plate thickness) of 0.7 mm has a weight of about 40% of a liquid crystal display device. For this reason, reducing the weight of the glass substrate generally has a great effect on reducing the weight of the liquid crystal display device.

  One way to reduce the weight of glass is to reduce the thickness. However, it is difficult to form TFTs, CFs and the like by high-precision patterning on a thin glass substrate, and there is a problem that patterning accuracy is limited. Further, when a glass substrate having different characteristics is used between the TFT substrate and the common electrode substrate disposed to face each other, the substrate is deformed by heat or the like, which causes a problem that bonding is difficult. Although there is a method of reducing the thickness by polishing the outer sides of both substrates after the liquid crystal display panel is completed, there is a problem that the manufacturing cost increases.

  As another method for reducing the weight of the substrate, there is a method using a plastic substrate instead of the glass substrate. However, there is a problem that it is difficult to form TFTs, CFs, and the like that require high-precision patterning as in the case of a thin glass substrate. In addition, since the substrate is flexible, there is a problem that pressure resistance against finger pressing or the like may be insufficient depending on the purpose of use. An object of the present embodiment is to provide a liquid crystal display device having high reliability and light weight.

  In order to deal with these problems, in this embodiment, the TFT and the CF are formed on one substrate. This eliminates the need for highly accurate patterning on the other substrate, so that a thin glass substrate, plastic substrate, or the like can be freely selected. In the present embodiment, columnar spacers that hold cell gaps are formed in advance on the substrate. By doing so, a stable cell gap is obtained and the pressure resistance is improved.

Hereinafter, the substrate for the liquid crystal display device according to the present embodiment, the liquid crystal display device including the substrate, and the manufacturing method thereof will be described more specifically with reference to Examples 2-1 and 2-2.
(Example 2-1)
First, a liquid crystal display device according to Example 2-1 will be described. The TFT substrate 8 of the liquid crystal display device according to this example has the same configuration as that of the TFT substrate 8 according to the first embodiment shown in FIGS.

  FIG. 23 corresponds to FIG. 10A and shows a cross section of the liquid crystal display device according to this example. As shown in FIG. 23, the liquid crystal display device according to the present embodiment is formed by bonding a TFT substrate 8 and a common electrode substrate 10 thinner than the TFT substrate 8 through a predetermined cell gap. In the common electrode substrate 10, a common electrode 18 is formed on a glass substrate 12 ′ that is thinner than the glass substrate 12 of the TFT substrate 8.

  Here, a substrate for a liquid crystal display device according to the present embodiment and a method for manufacturing a liquid crystal display device including the same will be briefly described. Since the manufacturing method of the TFT substrate 8 is the same as that of the first embodiment shown in FIGS. 11 to 16, the illustration and description thereof are omitted. As shown in FIG. 23, the common electrode substrate 10 uses a glass substrate 12 ′ using the same material as the glass substrate 12 on the TFT substrate 8 side and thinner than the glass substrate 12, for example, non-alkali glass having a thickness of 0.2 mm. . For example, an ITO film having a thickness of 100 nm is formed on the entire surface of the glass substrate 12 ′ and patterned to form the common electrode 18. The common electrode substrate 10 is completed through the above steps.

  Thereafter, an alignment film is formed on the opposing surfaces of both substrates 8 and 10 and rubbed. Next, a sealing material is applied and spacers are dispersed. Next, both substrates 8 and 10 are bonded together and divided into panels. Next, liquid crystal is injected from the liquid crystal injection port and sealed, and a polarizing plate is attached. The liquid crystal display device according to this embodiment is completed through the above steps.

  In this embodiment, a non-alkali glass having a thickness of 0.2 mm is used as the glass substrate 12 ′, but a glass having a specific gravity different from that of the glass substrate 12 may be used. In order to further reduce the manufacturing cost, soda lime glass containing an alkali component may be used. The alkali component contained in the glass is, for example, 1% or more. However, when glass containing an alkali component is used in a liquid crystal display device having a channel etch type TFT 42 with the operating semiconductor layer 52 exposed, there is a concern about alkali contamination of the TFT 42. It is desirable to protect. There is no problem when glass containing an alkali component is used in a liquid crystal display device having a channel protective film type TFT 42.

  In this embodiment, resin CF layers R, G, and B are formed on the TFT substrate 8 to use a light weight glass or plastic substrate for the common electrode substrate 10. For this reason, a lightweight and highly reliable liquid crystal display device can be realized. Further, if a thick substrate is arranged on the display screen side, the pressure resistance against finger pressing or the like can be improved.

(Example 2-2)
Next, a liquid crystal display device according to Example 2-2 will be described with reference to FIG. FIG. 24 is a cross-sectional view showing the configuration of the liquid crystal display device according to this example. As shown in FIG. 24, in the liquid crystal display device according to this example, the common electrode substrate 10 has a glass substrate 12 ′ thinner than the glass substrate 12 of the TFT substrate 8 in the same manner as the liquid crystal display device according to Example 2-1. is doing.

  On the TFT substrate 8, resin CF layers B, G, and R are laminated in this order, and a resin layer 60 made of a photosensitive acrylic resin is further laminated thereon to form a columnar spacer 30 that holds a cell gap. Yes. The layer configuration of the columnar spacer 30 may be other configurations, and the order of stacking is also arbitrary. Further, in the case of the MVA liquid crystal display device, the resin layer 60 may be formed simultaneously with the same forming material as the linear protrusions of the alignment regulating structure.

  According to the present embodiment, since the columnar spacer 30 is used, the cell gap does not vary by riding on the alignment regulating structure such as a spherical spacer dispersed on the substrate surface, and the stable cell. A gap is obtained. Further, since the columnar spacers 30 are arranged uniformly and at a high density on the substrate surface, the pressure resistance is improved. Therefore, even when the common electrode substrate 10 is arranged on the display screen side, a highly reliable liquid crystal display device can be realized. Further, when the TFT substrate 8 is arranged on the display screen side, reflection by the metal layer becomes large, and therefore it is desirable to use a metal of a low reflection multilayer film at least on the surface of the metal layer on the glass substrate 12 side.

The effect of this embodiment will be specifically described in comparison with a conventional liquid crystal display device. Table 1 shows two substrates A1 and B1 constituting a conventional liquid crystal display device. Resin CF layers R, G, and B are formed on one substrate A1, and TFTs 42 are formed on the other substrate B1. The material of the substrates A1 and B1 is NA35 glass. The thicknesses of the substrates A1 and B1 are 0.7 mm, and the density is 2.50 g / cm ³ .

Table 2 shows two substrates A2 and B2 constituting another conventional liquid crystal display device. Both substrates A2 and B2 are made of NA35 glass having a density of 2.50 g / cm ^{3 in} the same manner as the substrates A1 and B1. Both substrates A2 and B2 are polished after being bonded to each other, and the thickness is reduced to 0.5 mm. Resin CF layers R, G, and B are formed on one substrate A2, and a TFT 42 is formed on the other substrate B2. Further, the weight ratio of the liquid crystal display panel to which the substrates A1 and B1 shown in Table 1 are bonded is assumed to be 1 (hereinafter referred to as “the weight ratio of the panel”) is 0.71, and the weight is reduced. However, it is expensive because the manufacturing cost increases.

Table 3 shows two substrates A3 and B3 constituting the liquid crystal display device according to this example. As with the substrate B1, the substrate B3 is made of NA35 glass having a thickness of 0.7 mm and a density of 2.50 g / cm ³ . Further, the TFT 42 and the resin CF layers R, G, and B are formed on the substrate B3. On the other hand, as the substrate A3, Asahi AS glass which is an alkali glass having a thickness of 0.2 mm and a density of 2.49 g / cm ³ is used. The weight ratio of the panel is 0.64, which is lighter than the panel shown in Table 2. The material of the substrate A3 is not limited as long as it is glass that is lighter in weight than the substrate B3.

Table 4 shows two substrates A4 and B4 constituting another liquid crystal display device according to this embodiment. As with the substrate B1, the substrate B4 is made of NA35 glass having a thickness of 0.7 mm and a density of 2.50 g / cm ³ . A TFT and a CF are formed on the substrate B4. On the other hand, the substrate A4 is made of polyethersulfone (PES) having a thickness of 0.2 mm and a density of 1.40. The weight ratio of the panel is 0.58, which is lighter than the panel shown in Table 3. The material of the substrate A4 is not limited to PES as long as it is plastic, and may be polycarbonate (PC), polyarylate (PAR), or the like.

  As described above, in this embodiment, the resin CF layers R, B, and G are formed below the pixel electrode 14. For this reason, the common electrode substrate 10 does not need to be patterned with high accuracy, and does not need to be accurately aligned when it is bonded to the TFT substrate 8. Therefore, a thin glass substrate, a plastic substrate, or the like can be used as the common electrode substrate 10, and thus a light-weight and highly reliable liquid crystal display device can be realized. Further, since it is not necessary to polish both substrates after the TFT substrate 8 and the common electrode substrate 10 are bonded together, the manufacturing process does not increase and the manufacturing cost does not increase.

[Third Embodiment]
A substrate for a liquid crystal display device according to a third embodiment of the present invention, a liquid crystal display device including the same, and a method for manufacturing the same will be described with reference to FIGS.
As in the first embodiment, the substrate for a liquid crystal display device having a structure (CF-on-TFT structure) in which the resin CF layers R, G, and B are formed on the TFT substrate 8 is formed below the pixel electrode 14. Since the resin CF layers R, G, and B are formed, the aperture ratio can be improved. For this reason, the panel transmittance is improved and the luminance of the liquid crystal display device can be improved.

  However, in the liquid crystal display device substrate having the CF-on-TFT structure as in the first embodiment, the source / drain metal layer which is the uppermost layer at the stage of forming the TFT 42 (the gate metal layer in the top gate structure). Hereinafter, the resin CF layers R, G, and B formed on the upper layer are not covered unless the protective film (passivation film) covers these and the abbreviated source / drain metal layers. The source / drain metal layer is eroded by the CF developer at the time of patterning, causing a problem that the resistance value of the bus line formed of the metal layer increases or the bus line is disconnected. Further, the source / drain electrodes 44 and 46 are eroded and receded, and the exposed semiconductor layer 52 is contaminated by coming into contact with the CF developer. On the other hand, when a protective film formed by a CVD apparatus is formed on the source / drain metal layer, there arises a problem that the manufacturing process increases. An object of the present embodiment is to provide a substrate for a liquid crystal display device from which an inexpensive and highly reliable display device can be obtained, a liquid crystal display device including the substrate, and a manufacturing method thereof.

  With respect to these problems, in the present embodiment, the resin CF layers R, G, and B that are formed first, the BM resin that is formed under the resin CF layers R, G, and B, or the resin that constitutes the columnar spacer 30 are used. Covers the source / drain metal layer.

Hereinafter, the substrate for the liquid crystal display device according to the present embodiment, the liquid crystal display device including the substrate, and the manufacturing method thereof will be described more specifically with reference to Examples 3-1 and 3-2.
(Example 3-1)
First, a substrate for a liquid crystal display device according to Example 3-1, a liquid crystal display device including the same, and a manufacturing method thereof will be described with reference to FIGS. FIG. 25 shows the configuration of the substrate for a liquid crystal display device according to this example (however, the display of the CF layer is omitted). 26A shows a cross section of the substrate for a liquid crystal display device cut along the line JJ in FIG. 25, and FIG. 26B shows the cross section of the substrate for a liquid crystal display device cut along the line KK in FIG. A cross section is shown. As shown in FIG. 26, the substrate for a liquid crystal display device according to this example has a BM formed by laminating two resin CF layers of different colors at the end of the pixel region. All BMs with two resin CF layer stacks have a resin CF layer R as a lower layer. The resin CF layer R is formed so as to cover all the source / drain metal layers such as the drain bus line 26. The pixel electrode 14 is formed with slits 20 extending in parallel to the end of the pixel region and a plurality of fine slits 21 extending obliquely from the slit 20. In addition, the substrate for a liquid crystal display device according to this example has a liquid crystal having a polymer structure in which an ultraviolet monomer is cured by irradiation with ultraviolet rays.

  Next, a method for manufacturing a substrate for a liquid crystal display device according to the present embodiment will be described with reference to FIGS. 27 to 30 are views showing a method for manufacturing a substrate for a liquid crystal display device according to the present embodiment. 31 to 33 are process cross-sectional views illustrating a method for manufacturing a substrate for a liquid crystal display device according to the present embodiment. 31 to 33, (a) shows the same cross section as FIG. 26 (a), and (b) shows the same cross section as FIG. 26 (b). The steps until the TFT 42 and the drain bus line 26 are formed on the glass substrate 12 are the same as the manufacturing method of the substrate for a liquid crystal display device according to Example 1-1 shown in FIGS. And the description thereof is omitted.

  11 to 13, a plurality of gate bus lines 25 extending in the left-right direction in the drawing and drain bus lines 26 intersecting the gate bus line 25 and extending in the vertical direction in the drawing are formed. (See FIG. 27). A TFT 42 is formed in the vicinity of the intersection of the gate bus line 25 and the drain bus line 26. A pixel region is defined by the gate bus line 25 and the drain bus line 26. A storage capacitor bus line (auxiliary capacitor electrode) 62 extending substantially parallel to the gate bus line 25 across substantially the center of the pixel region is formed in the same layer as the gate bus line 25. A storage capacitor electrode (intermediate electrode) 64 is formed on the storage capacitor bus line 62 in the same layer as the drain bus line 26 for each pixel region.

  Next, a photosensitive pigment dispersion type R resist is applied and patterned to a film thickness of 1.5 μm, for example. 28 and 31, the first resin CF is formed on the pixel region for displaying R, on the TFT 42, on the gate bus line 25, on the drain bus line 26, and on the storage capacitor bus line 62. Layer R is formed. At this time, the drain electrode 44, the source electrode 46, and the drain bus line 26 of the uppermost metal layer are covered with the resin CF layer R.

  Next, G resist is applied to a film thickness of, for example, 1.5 μm and patterned. Thereafter, post-baking is performed to form a second resin CF layer G on the pixel region for displaying G and the drain bus line 26 adjacent to the left side of the pixel region in the drawing, as shown in FIGS. . At this time, on the TFT 42 in the pixel region, the gate bus line 25 adjacent to the pixel region, the storage capacitor bus line 62 in the pixel region, and the drain bus line 26 adjacent to the left of the pixel region, the resin CF A BM is formed by stacking two layers.

  Next, a B resist is applied to a film thickness of 1.5 μm, for example, and patterned. 30 and 33, the pixel region for displaying B, the drain bus line 26 adjacent to both sides of the pixel region, and the TFT 42 adjacent to the right side of the pixel region in the drawing, as shown in FIGS. Then, the third resin CF layer B is formed. At this time, the TFT 42 in the pixel region adjacent to the right side of the pixel region, the gate bus line 25 adjacent to the pixel region, the storage capacitor bus line 62 in the pixel region, and the drain bus line adjacent to both sides of the pixel region. On, a BM is formed by stacking two resin CF layers.

  Thereafter, for example, ITO having a film thickness of 70 nm is formed on the entire surface and patterned to form the pixel electrode 14, the slit 20, and the fine slit 21 in each pixel region, and the liquid crystal display device substrate shown in FIGS. 25 and 26 is formed. Complete.

  Next, a vertical alignment film is applied to the opposing surfaces of the common electrode substrate on which the common electrode made of ITO, for example, is formed, and the liquid crystal display device substrate. Next, for example, spherical spacers are dispersed on one substrate, and a sealing material is applied around the other substrate. Subsequently, the substrates are bonded together, and liquid crystal is injected between the substrates. As the liquid crystal, for example, a negative liquid crystal having a negative dielectric anisotropy and 0.2 wt% of an ultraviolet curable monomer is used. Next, a gray scale voltage of, for example, direct current (DC) 10V is applied to the drain bus line 26, and a common voltage of, for example, DC 5V is applied to the common electrode. Subsequently, for example, a gate voltage of DC 30 V is applied to the gate bus line 25, and the liquid crystal in the liquid crystal display panel is tilted, and 2000 mJ of ultraviolet light having a wavelength of 300 nm to 450 nm, for example, is irradiated from the counter substrate side. As a result, the ultraviolet curable monomer is cured and a polymer structure is formed in the liquid crystal in the liquid crystal display panel. As shown in FIG. 25, the liquid crystal molecules (shown by the cylinders in the figure) in the non-voltage applied state are tilted in four directions. Occurs. In this embodiment, the pretilt angle of the liquid crystal molecules is 86 °. Thereafter, the polarizing plates of both substrates are pasted to complete the liquid crystal display device according to this example.

(Example 3-2)
Next, a substrate for a liquid crystal display device according to Example 3-2, a liquid crystal display device including the same, and a method for manufacturing the same will be described with reference to FIGS. FIG. 34 is a cross-sectional view showing the configuration of the substrate for a liquid crystal display device according to this example. The liquid crystal display substrate according to Example 3-1 has a channel protective film type TFT 42, but the liquid crystal display device substrate according to this example has a channel etch type TFT 66 as shown in FIG. is doing.

Next, the substrate for the liquid crystal display device according to the present embodiment, the liquid crystal display device including the substrate, and the manufacturing method thereof will be described. First, an Al layer having a thickness of 100 nm and a Ti layer having a thickness of 50 nm, for example, are formed and patterned in this order on the entire surface of the glass substrate 12 to form the gate bus line 25 and the storage capacitor bus line. Next, for example, a 350 nm thick SiN film, a 120 nm thick a-Si layer, and a 30 nm thick n ⁺ a-Si layer are successively formed. Next, the n ⁺ a-Si layer and the a-Si layer are patterned in an island shape to form an operating semiconductor layer 52 ′ and an n-type semiconductor layer (not shown) thereabove. Next, for example, MoN having a thickness of 50 nm, Al having a thickness of 150 nm, MoN having a thickness of 70 nm, and Mo having a thickness of 10 nm are continuously formed and patterned, and the source electrode 46, the drain electrode 44, and the storage capacitor electrode are separated by element isolation. Form. Through the above process, a channel etch type TFT 66 is completed. Since the subsequent steps are the same as those of the liquid crystal display device manufacturing method according to Example 3-1, shown in FIGS.

Next, a method for manufacturing a substrate for a liquid crystal display device according to another example will be described. Although illustration is omitted, the same reference numeral is given to the configuration having the same functional action as the configuration shown in FIG. The substrate for a liquid crystal display device according to this example has a top gate type TFT 42. First, on the glass substrate 12, for example, a 20 nm thick Ti layer, a 75 nm thick Al layer, a 40 nm thick Ti layer, and a 30 nm thick n ⁺ a-Si layer are formed and patterned to form a drain electrode. 44 and the source electrode 46 are formed. Next, for example, an a-Si layer having a thickness of 30 nm, a SiN film having a thickness of 350 nm, and an Al layer having a thickness of 100 nm are formed and patterned, and the operation semiconductor layer 52 ′, the insulating film 24, and the gate bus line 25 are collectively formed. To form. The active semiconductor layer 52 ′, the insulating film 24, and the gate bus line 25 may be sequentially formed without being collectively formed. The top gate TFT 42 is completed through the above steps. In this example, the storage capacitor bus line 62 and the storage capacitor electrode 64 are not formed, but may be formed. Subsequent steps are almost the same as the method of manufacturing the liquid crystal display device according to Example 3-1 shown in FIGS. In this example, since the uppermost metal layer is a gate metal layer, the resin metal layer formed first covers the gate metal layer.

A method for manufacturing a substrate for a liquid crystal display device according to still another example will be described. Although illustration is omitted, the same reference numeral is given to the configuration having the same functional action as the configuration shown in FIG. The substrate for a liquid crystal display device according to this example has a TFT using polysilicon (p-Si) for the operating semiconductor layer 52. First, for example, a SiN film having a thickness of 50 nm, a SiO ₂ film having a thickness of 200 nm, and an a-Si layer having a thickness of 40 nm are formed on the glass substrate 12, and hydrogen is removed by heat treatment in an annealing furnace. Next, the a-Si layer is crystallized by irradiating a predetermined laser, and patterned to form a p-Si layer. Next, for example, an SiO ₂ film having a thickness of 110 nm and an AlNd film having a thickness of 300 nm are formed and patterned to form an insulating film (gate insulating film) 24 and a gate bus line 25.

Next, phosphorus (P) is ion-doped into the p-Si layer to selectively form an N-type region, and boron (B) is then ion-doped into the p-Si layer to select a P-type region. Form. Next, for example, a SiO ₂ film having a thickness of 60 nm and a SiN film having a thickness of 370 nm are formed to form an interlayer insulating film. Subsequently, an interlayer insulating film on the high concentration impurity region is opened to form a contact hole. Next, for example, a Ti layer with a thickness of 100 nm, an Al layer with a thickness of 200 nm, and a Ti layer with a thickness of 100 nm are formed and patterned to form the drain electrode 44 and the source electrode 46. Through the above steps, the TFT 70 using p-Si for the operating semiconductor layer is completed. In this embodiment, the storage capacitor bus line and the storage capacitor electrode are not formed, but the storage capacitor bus line is formed simultaneously with the same material as the gate bus line, and the storage capacitor electrode is the same as the source / drain electrode. Of course, it may be formed simultaneously with the forming material.

  In the above embodiment, the uppermost metal layer is covered with the resin CF layer that is formed first. However, before the resin CF layer is formed, the uppermost metal layer is formed with the resin for BM or the resin that becomes a part of the columnar spacer. You may make it cover. In the above embodiment, the BM is formed by laminating two layers of the first and second resin CF layers or the first and third resin CF layers on the TFT 42 and the bus lines 25, 26, 62. However, all three resin CF layers may be laminated to form a BM, or if a BM is formed in another process, the resin CF layer may not be laminated.

  Furthermore, in the above-described embodiment, a liquid crystal display device using a pretilt angle imparting technique using a polymer is taken as an example, and thus the slit 20 and the fine slit 21 are formed on the pixel electrode 14. A structure for use may be formed. In the above embodiment, the entire uppermost metal layer is covered with the resin CF layer, but only the edge portion of the uppermost metal layer may be covered. The substrate for the liquid crystal display device may of course have a structure without the storage capacitor bus line 62 made of the same material as the gate bus line 25 and the storage capacitor electrode 64 made of the same material as the source / drain electrodes 44 and 46. .

  As described above, in this embodiment, the source / drain metal layer (the gate metal layer in the top gate structure) is formed so as to be covered with the resin CF layer that is formed first. Therefore, the source / drain metal layer is not eroded by the CF developer during the patterning of the resin CF layer. Therefore, the resistance of the bus line does not increase or the bus line is not disconnected, and the manufacturing yield is improved. Further, the operating semiconductor layer 52 is not contaminated. Further, since it is not necessary to form a protective film on the source / drain metal layer, the manufacturing process is not increased.

  In the liquid crystal display device according to the present embodiment, luminance reduction and unevenness due to a reduction in retention rate, and pattern burn-in do not occur. In addition, since the resin CF layers R, G, and B formed on the TFT 42 absorb the ultraviolet rays irradiated when forming the polymer structure, display defects such as crosstalk and flicker due to abnormal characteristics of the TFT 42 do not occur. .

  In the liquid crystal display device according to the present embodiment, a wide viewing angle is obtained because the liquid crystal molecules are aligned and divided in four directions, and a high contrast is obtained by vertical alignment. Furthermore, since the direction in which the liquid crystal molecules tilt is defined by the polymer structure, high-speed response characteristics can be realized.

The present invention is not limited to the above embodiment, and various modifications can be made.
For example, in the above embodiment, the pixel electrode 14 is formed immediately above the resin CF layers R, G, B. However, the present invention is not limited to this, and an organic material or inorganic material is formed on the resin CF layers R, G, B. A protective film made of a material may be formed, and the pixel electrode 14 may be formed on the protective film. By forming the protective film, it is possible to prevent the liquid crystal from being contaminated by the resin CF material, or to reduce the step of the pixel electrode 14 to prevent disconnection. In addition, the formation order of the resin CF layers R, G, and B is arbitrary, and the formation material, the layer configuration, the film thickness, and the like of the TFT 42 and the resin CF layers R, G, and B are not limited to the above embodiments.

  In the above-described embodiment, a transmissive liquid crystal display device is described. However, the present invention is not limited to this, and can be applied to a reflective liquid crystal display device. In the above embodiment, an MVA liquid crystal display device is described. However, the present invention is not limited to this, and the present invention can also be applied to other liquid crystal display devices such as a TN mode.

The substrate for the liquid crystal display device according to the first embodiment described above, the liquid crystal display device including the substrate, and the manufacturing method thereof are summarized as follows.
(Appendix 1)
A substrate for sandwiching a liquid crystal having a negative dielectric anisotropy together with a counter substrate disposed oppositely; and
A plurality of gate bus lines formed on the substrate;
A plurality of drain bus lines formed on the substrate intersecting the gate bus lines;
A pixel region defined by the gate bus line and the drain bus line;
A thin film transistor formed for each pixel region;
A resin color filter layer formed for each pixel region;
A pixel electrode formed for each of the pixel regions;
A substrate for a liquid crystal display device, comprising: an alignment regulating structure formed on the substrate for regulating the alignment of the liquid crystal.

(Appendix 2)
In the substrate for a liquid crystal display device according to appendix 1,
A liquid crystal display substrate, further comprising a light-shielding film that shields an end of the pixel region.

(Appendix 3)
In the substrate for a liquid crystal display device according to appendix 2,
The liquid crystal display device substrate, wherein the light shielding film is formed by laminating the resin color filter layer.

(Appendix 4)
In the substrate for a liquid crystal display device according to appendices 1 to 3,
The pixel electrode is formed on the resin color filter layer. A substrate for a liquid crystal display device.

(Appendix 5)
In the substrate for liquid crystal display device according to appendix 4,
The liquid crystal display substrate according to claim 1, wherein the pixel electrode is formed so as to overlap the drain bus line when viewed in a direction perpendicular to the substrate surface.

(Appendix 6)
In the substrate for liquid crystal display device according to appendix 4,
The substrate for a liquid crystal display device, wherein the pixel electrode is formed so as not to overlap the drain bus line when viewed in a direction perpendicular to the substrate surface.

(Appendix 7)
The substrate for a liquid crystal display device according to any one of appendices 1 to 6,
The substrate for a liquid crystal display device, wherein the alignment regulating structure is a linear protrusion.

(Appendix 8)
The substrate for a liquid crystal display device according to any one of appendices 1 to 7,
It further has a columnar spacer for holding the cell gap,
The columnar spacer is formed by laminating a resin layer formed on the substrate. A substrate for a liquid crystal display device.

(Appendix 9)
In the substrate for liquid crystal display device according to appendix 8,
The substrate for a liquid crystal display device, wherein the resin layer includes the resin color filter layer.

(Appendix 10)
In the liquid crystal display substrate according to appendix 8 or 9,
The substrate for a liquid crystal display device, wherein the resin layer includes a black resin layer.

(Appendix 11)
The substrate for a liquid crystal display device according to any one of appendices 8 to 10,
The liquid crystal display device substrate, wherein the resin layer includes a formation layer of the linear protrusions.

(Appendix 12)
A substrate for sandwiching a liquid crystal having a negative dielectric anisotropy together with a counter substrate disposed oppositely; and
Linear protrusions formed on the substrate to regulate the alignment of the liquid crystal;
A substrate for a liquid crystal display device, comprising: an alignment mark which is formed on the substrate with the same material as the linear protrusion and is used for bonding to the counter substrate.

(Appendix 13)
A substrate for sandwiching a liquid crystal having a negative dielectric anisotropy together with a counter substrate disposed oppositely; and
Linear protrusions formed on the substrate to regulate the alignment of the liquid crystal;
A substrate for a liquid crystal display device, comprising: a frame region that is formed of the same forming material as the projections at a display region end portion on the substrate and shields the display region end portion from light.

(Appendix 14)
In the substrate for a liquid crystal display device according to appendix 12 or 13,
The protrusion is made of a black resin. A substrate for a liquid crystal display device.

(Appendix 15)
In the substrate for a liquid crystal display device according to appendix 12 or 13,
The projection is formed by laminating a metal layer and a resist layer. A substrate for a liquid crystal display device.

(Appendix 16)
In a liquid crystal display device having two substrates and a liquid crystal sealed between the substrates,
16. A liquid crystal display device according to any one of appendices 1 to 15, wherein at least one of the substrates is a liquid crystal display device.

(Appendix 17)
A first substrate on which a first resin layer is formed;
A second substrate on which a second resin layer is formed;
Columnar spacers formed by bonding the first and second substrates to form the first and second resin layers;
A liquid crystal display device comprising: a liquid crystal sealed between the first and second substrates.

(Appendix 18)
Forming a common electrode on the substrate,
A method of manufacturing a substrate for a liquid crystal display device, comprising: forming alignment marks on the substrate simultaneously with forming linear protrusions on the common electrode.

(Appendix 19)
Forming a common electrode on the substrate,
A method of manufacturing a substrate for a liquid crystal display device, wherein a frame region is formed on the substrate simultaneously with the formation of the linear protrusions on the common electrode.

(Appendix 20)
A plurality of bus lines and thin film transistors intersecting each other are formed on the substrate,
A columnar spacer is simultaneously formed when forming linear protrusions on the substrate. A method for manufacturing a substrate for a liquid crystal display device, comprising:

The substrate for a liquid crystal display device according to the second embodiment described above, a method for manufacturing the same, and a liquid crystal display device including the substrate are summarized as follows.
(Appendix 21)
A first substrate; a plurality of bus lines formed on the first substrate so as to intersect each other; a pixel region defined by the bus lines; a thin film transistor formed for each pixel region; and the pixel A thin film transistor substrate including a resin color filter layer formed for each region and a pixel electrode formed for each pixel region;
A common electrode substrate, comprising: a second substrate having a thickness or material different from that of the first substrate; and a common electrode formed on the second substrate, and disposed opposite to the first substrate. When,
A liquid crystal display device comprising: a liquid crystal sealed between the thin film transistor substrate and the common electrode substrate.

(Appendix 22)
In the liquid crystal display device according to attachment 21,
The liquid crystal display device, wherein the second substrate is thinner than the first substrate.

(Appendix 23)
In the liquid crystal display device according to appendix 21 or 22,
The liquid crystal display device, wherein the second substrate is lighter in weight than the first substrate.

(Appendix 24)
24. The liquid crystal display device according to any one of appendices 21 to 23,
The liquid crystal display device, wherein the second substrate is made of a glass material containing an alkali component.

(Appendix 25)
In the liquid crystal display device according to attachment 24,
The glass material contains 1% or more of an alkali component.

(Appendix 26)
24. The liquid crystal display device according to any one of appendices 21 to 23,
The liquid crystal display device, wherein the second substrate is made of a resin material.

(Appendix 27)
In the liquid crystal display device according to any one of appendices 21 to 26,
A liquid crystal display device further comprising a columnar spacer for maintaining a distance between the thin film transistor substrate and the common electrode substrate.

(Appendix 28)
28. The liquid crystal display device according to any one of appendices 21 to 27,
The liquid crystal display device, wherein the thin film transistor substrate is on a display screen side.

(Appendix 29)
In the liquid crystal display device according to attachment 28,
The liquid crystal display device according to claim 1, wherein at least the first substrate side surface of the bus line is formed of a low reflection material.

(Appendix 30)
In the liquid crystal display device according to appendix 28 or 29,
The liquid crystal display device, wherein at least the first substrate side surface of the drain electrode and the source electrode of the thin film transistor is formed of a low reflection material.

The substrate for a liquid crystal display device according to the third embodiment described above, the manufacturing method thereof, and the liquid crystal display device including the same are summarized as follows.
(Appendix 31)
A substrate that sandwiches the liquid crystal together with the opposing substrate disposed oppositely;
A plurality of gate bus lines formed on the substrate;
A plurality of drain bus lines formed on the substrate intersecting the gate bus lines;
A pixel region defined by the gate bus line and the drain bus line;
A thin film transistor formed for each pixel region;
A resin color filter layer formed for each pixel region;
A pixel electrode formed for each of the pixel regions;
A substrate for a liquid crystal display device, comprising: a resin layer formed to cover a source / drain electrode of the thin film transistor and the drain bus line.

(Appendix 32)
In the substrate for liquid crystal display device according to appendix 31,
The substrate for a liquid crystal display device, wherein the resin layer is formed of the resin color filter layer.

(Appendix 33)
In the substrate for liquid crystal display device according to attachment 32,
A liquid crystal display substrate, wherein the resin color filter layer of another color is laminated on the resin layer.

(Appendix 34)
In the substrate for liquid crystal display device according to appendix 31,
The resin layer includes a black resin. A substrate for a liquid crystal display device.

(Appendix 35)
In the substrate for liquid crystal display device according to appendix 31,
The said resin layer contains a columnar spacer formation layer. The board | substrate for liquid crystal display devices characterized by the above-mentioned.

(Appendix 36)
In a liquid crystal display device having two substrates and a liquid crystal layer sealed between the substrates,
36. A liquid crystal display device according to any one of appendices 31 to 35, wherein one of the substrates is a substrate for a liquid crystal display device.

(Appendix 37)
In the liquid crystal display device according to attachment 36,
A liquid crystal display device, wherein the liquid crystal layer has a polymer structure.

(Appendix 38)
A thin film transistor is formed on the substrate,
Forming a first resin color filter layer to cover the source / drain electrodes and drain bus lines of the thin film transistor;
Forming a second resin color filter layer in another pixel region;
A method for manufacturing a substrate for a liquid crystal display device, further comprising forming a third resin color filter layer in another pixel region.

It is a figure which shows the structure of the liquid crystal display device by the 1st Embodiment of this invention. It is sectional drawing which shows the 1st basic composition of the board | substrate for liquid crystal display devices by the 1st Embodiment of this invention, and a liquid crystal display device provided with the same. It is sectional drawing which shows the modification of the 1st basic composition of the board | substrate for liquid crystal display devices by the 1st Embodiment of this invention, and a liquid crystal display device provided with the same. It is sectional drawing which shows the 2nd basic composition of the board | substrate for liquid crystal display devices by the 1st Embodiment of this invention, and a liquid crystal display device provided with the same. It is a figure which shows the 3rd basic composition of the board | substrate for liquid crystal display devices by the 1st Embodiment of this invention. It is a figure which shows the 3rd basic composition of the board | substrate for liquid crystal display devices by the 1st Embodiment of this invention. It is a figure which shows the structure of the liquid crystal display device by Example 1-1 of the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the liquid crystal display device by Example 1-1 of the 1st Embodiment of this invention. It is a figure which shows the structure of the board | substrate for liquid crystal display devices by Example 1-1 of the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the board | substrate for liquid crystal display devices by Example 1-1 of the 1st Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the board | substrate for liquid crystal display devices by Example 1-1 of the 1st Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the board | substrate for liquid crystal display devices by Example 1-1 of the 1st Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the board | substrate for liquid crystal display devices by Example 1-1 of the 1st Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the board | substrate for liquid crystal display devices by Example 1-1 of the 1st Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the board | substrate for liquid crystal display devices by Example 1-1 of the 1st Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the board | substrate for liquid crystal display devices by Example 1-1 of the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the liquid crystal display device by Example 1-2 of the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the liquid crystal display device by Example 1-2 of the 1st Embodiment of this invention. It is a figure which shows the structure of the board | substrate for liquid crystal display devices by Example 1-3 of the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the board | substrate for liquid crystal display devices by Example 1-3 of the 1st Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the board | substrate for liquid crystal display devices by Example 1-3 of the 1st Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the board | substrate for liquid crystal display devices by Example 1-3 of the 1st Embodiment of this invention. It is a figure which shows the structure of the board | substrate for liquid crystal display devices by Example 2-1 of the 2nd Embodiment of this invention. It is process sectional drawing which shows the structure of the liquid crystal display device by Example 2-2 of the 2nd Embodiment of this invention. It is a figure which shows the structure of the liquid crystal display device by Example 3-1 of the 3rd Embodiment of this invention. It is sectional drawing which shows the structure of the liquid crystal display device by Example 3-1 of the 3rd Embodiment of this invention. It is a figure which shows the manufacturing method of the liquid crystal display device by Example 3-1 of the 3rd Embodiment of this invention. It is a figure which shows the manufacturing method of the liquid crystal display device by Example 3-1 of the 3rd Embodiment of this invention. It is a figure which shows the manufacturing method of the liquid crystal display device by Example 3-1 of the 3rd Embodiment of this invention. It is a figure which shows the manufacturing method of the liquid crystal display device by Example 3-1 of the 3rd Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the liquid crystal display device by Example 3-1 of the 3rd Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the liquid crystal display device by Example 3-1 of the 3rd Embodiment of this invention. It is process sectional drawing which shows the manufacturing method of the liquid crystal display device by Example 3-1 of the 3rd Embodiment of this invention. It is sectional drawing which shows the structure of the liquid crystal display device by Example 3-2 of the 3rd Embodiment of this invention. It is a figure which shows the structure of the conventional liquid crystal display device. It is sectional drawing which shows the structure of the conventional liquid crystal display device. It is sectional drawing which shows the structure of the conventional liquid crystal display device. It is sectional drawing which shows the structure of the conventional liquid crystal display device. It is sectional drawing which shows the structure of the conventional liquid crystal display device. It is sectional drawing which shows the structure of the conventional liquid crystal display device. It is sectional drawing which shows the structure of the conventional liquid crystal display device. It is sectional drawing which shows the modification of a structure of the liquid crystal display device by Example 1-2 of the 1st Embodiment of this invention.

Explanation of symbols

8 TFT substrate 10 Common electrode substrate 12, 12 'Glass substrate 14 Pixel electrode 18 Common electrode 20 Slit 21 Fine slit 24 Insulating film 25 Gate bus line 26 Drain bus line 28 Linear protrusion 29 Protrusion 30 Columnar spacer 32 Resin overlap part 34 Frame Pattern 36 Alignment mark 38 Display area 40 Frame area 42, 66 TFT
44 drain electrode 46 source electrode 48 channel protective film 50, 51 contact hole 52 operating semiconductor layer 54 SiN film 56 dielectric layer 58 Cr film 60 resin layer 62 storage capacitor bus line 64 storage capacitor electrode

Claims (9)

A substrate for sandwiching a liquid crystal having a negative dielectric anisotropy together with a counter substrate disposed oppositely; and
Linear protrusions formed on the substrate to regulate the alignment of the liquid crystal;
A substrate for a liquid crystal display device, comprising: an alignment mark which is formed on the substrate with the same material as the linear protrusion and is used for bonding to the counter substrate. A substrate for sandwiching a liquid crystal having a negative dielectric anisotropy together with a counter substrate disposed oppositely; and
Linear protrusions formed on the substrate to regulate the alignment of the liquid crystal;
A substrate for a liquid crystal display device, comprising: a frame region that is formed of the same forming material as the projections at a display region end portion on the substrate and shields the display region end portion from light. A first substrate on which a first resin layer is formed;
A second substrate on which a second resin layer is formed;
Columnar spacers formed by bonding the first and second substrates to form the first and second resin layers;
A liquid crystal display device comprising: a liquid crystal sealed between the first and second substrates. Forming a common electrode on the substrate,
A method of manufacturing a substrate for a liquid crystal display device, comprising: forming alignment marks on the substrate simultaneously with forming linear protrusions on the common electrode. Forming a common electrode on the substrate,
A method of manufacturing a substrate for a liquid crystal display device, wherein a frame region is formed on the substrate simultaneously with the formation of the linear protrusions on the common electrode. A plurality of bus lines and thin film transistors intersecting each other are formed on the substrate,
A columnar spacer is simultaneously formed when forming linear protrusions on the substrate. A method for manufacturing a substrate for a liquid crystal display device, comprising: A first substrate; a plurality of bus lines formed on the first substrate so as to intersect each other; a pixel region defined by the bus lines; a thin film transistor formed for each pixel region; and the pixel A thin film transistor substrate including a resin color filter layer formed for each region and a pixel electrode formed for each pixel region;
A common electrode substrate, comprising: a second substrate having a thickness or material different from that of the first substrate; and a common electrode formed on the second substrate, and disposed opposite to the first substrate. When,
A liquid crystal display device comprising: a liquid crystal sealed between the thin film transistor substrate and the common electrode substrate. A substrate that sandwiches the liquid crystal together with the opposing substrate disposed oppositely;
A plurality of gate bus lines formed on the substrate;
A plurality of drain bus lines formed on the substrate intersecting the gate bus lines;
A pixel region defined by the gate bus line and the drain bus line;
A thin film transistor formed for each pixel region;
A resin color filter layer formed for each pixel region;
A pixel electrode formed for each of the pixel regions;
A substrate for a liquid crystal display device, comprising: a resin layer formed to cover a source / drain electrode of the thin film transistor and the drain bus line. A thin film transistor is formed on the substrate,
Forming a first resin color filter layer to cover the source / drain electrodes and drain bus lines of the thin film transistor;
Forming a second resin color filter layer in another pixel region;
A method for manufacturing a substrate for a liquid crystal display device, further comprising forming a third resin color filter layer in another pixel region.

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