JP2006140217A - Semiconductor module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor module which can contribute to miniaturization of a system and reduction of cost. <P>SOLUTION: An npn transistor Q1 constituting an upper arm is sandwiched with a spacer 66 between a positive electrode plate 70 and an electrode plate 72 from both sides. An npn transistor Q2 constituting a lower arm is sandwiched with a spacer 68 between an output electrode plate 74 and a negative electrode plate 76 from both sides. A conductor 78 which electrically connects the electrode plate 72 to the output electrode plate 74 is arranged between the electrode plate 72 and the output electrode plate 74. A current sensor 42 is disposed in a conductor 78. When the upper arm is turned on, current is detected flowing from the positive electrode plate 70 to the output electrode plate 74. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor module, and more particularly to a semiconductor module incorporating a power semiconductor element and an electrode.

  Japanese Patent Laying-Open No. 2003-179203 (Patent Document 1) discloses a semiconductor module in which a power semiconductor element and a power wiring are integrally molded. This semiconductor module includes a power circuit such as an IGBT (Insulated Gate Bipolar Transistor), a diode connected in reverse parallel thereto, and a main circuit module molded with power wiring, a printed circuit board, and on the main circuit module. And a drive / control circuit that is arranged upright on the screen (see Patent Document 1).

Since such a semiconductor module can integrally mold a single phase or multiple phases together with a power wiring with a power transistor and a diode connected in reverse parallel thereto as an arm unit, it has advantages such as excellent assemblability. Generally have.
JP 2003-179203 A JP 2003-174766 A JP-A-1-214266

  In order to perform drive control of an electrical load by actually using the semiconductor module as described above, it is necessary to detect the output current from the semiconductor module and control the operation of the semiconductor module based on the detected output current. There is.

  Here, the current sensor for detecting the output current from the semiconductor module is generally disposed on the power path between the semiconductor module and the electric load. As a result, a signal harness or the like wired between the current sensor and the control circuit of the semiconductor module has been a problem because it hinders downsizing and cost reduction of the entire load driving device.

  In particular, in vehicles equipped with load drive devices using power semiconductor elements such as hybrid vehicles and electric vehicles, which have been attracting much attention in recent years, a thorough system is needed to further promote the future. Miniaturization and cost reduction are indispensable, and an arrangement configuration of a current sensor is cited as one of the problems to achieve these.

  In the above-mentioned Japanese Patent Application Laid-Open No. 2003-179203, the arrangement configuration of the current sensor when the semiconductor module is actually used is not considered, and the above-described problem cannot be solved.

  Accordingly, the present invention has been made to solve such a problem, and an object thereof is to provide a semiconductor module that can contribute to downsizing and cost reduction of a system.

  According to this invention, the semiconductor module is disposed on the same plane as the first electrode, the first and second electrodes provided so as to sandwich the semiconductor element portion from both sides, and the output terminal. A third electrode connected to the first electrode, a conductive portion disposed between the second electrode and the third electrode, and electrically connecting the second electrode to the third electrode, and disposed in the conductive portion. And a current sensor that detects a current flowing through the conductive portion.

  Preferably, the semiconductor module includes a fourth electrode disposed on the same plane as the second electrode, and another semiconductor element portion provided so as to be sandwiched between the third and fourth electrodes from both sides. In addition, the semiconductor element portion and the other semiconductor element portion respectively constitute an upper arm and a lower arm, the first and fourth electrodes are a positive electrode and a negative electrode, respectively, and the third electrode is an electric This is an output electrode that outputs a current to a load.

  Preferably, the semiconductor module further includes a mold resin for fixing and sealing the semiconductor element part, another semiconductor element part, the first to fourth electrodes, the conductive part, and the current sensor.

  Preferably, the current sensor includes an electromagnetic core disposed so as to surround the conductive portion, and a magnetic detection element that detects a magnetic flux collected by the electromagnetic core.

  Preferably, the current sensor further includes a current sensor circuit board and a current sensor circuit disposed on the current sensor circuit board, and the magnetic detection element is surface-mounted on the current sensor circuit board, and the current sensor circuit board Is arranged such that the magnetic detection element is located at the open end of the electromagnetic core.

  Preferably, the semiconductor module further includes an insulating substrate on which the first and third electrodes are mounted, the current sensor further includes a current sensor circuit for operating the magnetic detection element, and the current sensor circuit is on the insulating substrate. It is arranged.

  Preferably, the semiconductor module includes first and second signal lines for driving the semiconductor element part and the other semiconductor element part, respectively, and a third signal line for outputting a detection signal from the current sensor to the outside. The first to third signal lines are led out from the same plane of the semiconductor module.

  According to the invention, the semiconductor module is disposed on the same plane as the semiconductor element portion, the first and second electrodes provided so as to sandwich the semiconductor element portion from both sides, and the first electrode, A third electrode connected to the output terminal; disposed between the second electrode and the third electrode; electrically connecting the second electrode to the third electrode; A resistor that causes a constant voltage drop according to the current that flows between the third electrode and a current measurement circuit that measures the current that flows through the resistor based on the amount of voltage drop caused by the resistor and the magnitude of the resistor; Prepare.

  In the semiconductor module according to the present invention, the current flowing in the conductive portion disposed between the second electrode and the third electrode and electrically connecting the second electrode to the third electrode is detected. A current sensor is provided. That is, since the current sensor is built in the semiconductor module, it is not necessary to secure a mounting space for the current sensor on the power path between the semiconductor module and the electric load. In addition, the signal harness between the current sensor and the control circuit of the semiconductor module is shortened. Therefore, according to this invention, it can contribute to size reduction of a system and can contribute to the cost reduction of a system further.

  According to the semiconductor module of the present invention, the mold resin integrally fixes and seals the semiconductor element part, the other semiconductor element part, the first to fourth electrodes, the conductive part, and the current sensor. A semiconductor module excellent in earthquake resistance and moisture resistance is realized.

  In addition, according to the semiconductor module of the present invention, since the magnetic detection element for detecting current is surface-mounted on the current sensor circuit board, it is excellent in assemblability when the current sensor is assembled in the semiconductor module. In addition, the earthquake resistance of the semiconductor module is improved.

  According to the semiconductor module of the present invention, since the current sensor circuit is disposed on the insulating substrate on which the first and third electrodes are mounted, there is no need to provide a separate circuit board for the current sensor circuit. Assembling property of the semiconductor module is improved.

  According to the semiconductor module of the present invention, the first and second signal lines for driving the semiconductor element portion and the other semiconductor element portion, respectively, and the third for outputting the detection signal from the current sensor to the outside. The first to third signal lines are led out from the same plane of the semiconductor module, so that the assembling property when the semiconductor device is configured using the semiconductor module is improved. To do.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

[Embodiment 1]
FIG. 1 is a circuit diagram of a motor driving device shown as an example of a device in which a semiconductor module according to Embodiment 1 of the present invention is used. Referring to FIG. 1, this motor drive device 10 includes a battery B, an inverter 20, a control device 30, a motor generator MG, a capacitor C, a power supply line PL, a ground line SL, an output line UL, VL, WL and current sensors 42, 44, 46 are provided. Inverter 20 is connected to battery B through power supply line PL and ground line SL. Inverter 20 is connected to motor generator MG, which is an electrical load, via output lines UL, VL, WL.

  The battery B is a direct current power source, and is composed of, for example, a secondary battery such as nickel metal hydride or lithium ion. Battery B supplies the generated DC voltage to inverter 20 through power supply line PL. Battery B is charged by a DC voltage received from inverter 20 through power supply line PL. Capacitor C is connected between power supply line PL and ground line SL, and reduces the influence on battery B and inverter 20 due to voltage fluctuation.

  Motor generator MG is, for example, a three-phase AC synchronous motor, and generates driving force by AC power received from inverter 20 via output lines UL, VL, WL. Motor generator MG also generates AC power during regenerative braking, and outputs the generated AC power to inverter 20 via output lines UL, VL, WL.

  Inverter 20 includes a U-phase arm 22, a V-phase arm 24 and a W-phase arm 26. U-phase arm 22, V-phase arm 24, and W-phase arm 26 are connected in parallel between power supply line PL and ground line SL. The U-phase arm 22 is composed of npn transistors Q1 and Q2 connected in series, the V-phase arm 24 is composed of npn transistors Q3 and Q4 connected in series, and the W-phase arm 26 is connected in series. Npn transistors Q5 and Q6. Each of the npn transistors Q1 to Q6 is made of, for example, an IGBT. Also, diodes D1 to D6 that flow current from the emitter side to the collector side are connected between the collector and emitter of npn transistors Q1 to Q6, respectively. A connection point of each npn transistor in each phase arm is connected to an anti-neutral point side of each U, V, W phase coil of motor generator MG via output lines UL, VL, WL.

  Inverter 20 converts a DC voltage received from battery B through power supply line PL into an AC voltage based on a control signal from control device 30, and outputs the converted AC voltage to motor generator MG. Thereby, motor generator MG is driven to generate a desired torque. Inverter 20 also converts the AC voltage regenerated by motor generator MG into a DC voltage based on a control signal from control device 30, and outputs the converted DC voltage to power supply line PL.

  The current sensor 42 is disposed between the upper arm of the U-phase arm 22 and the connection point between the upper and lower arms of the U-phase arm 22 and detects a current flowing from the U-phase arm 22 to the output line UL. Is output to the control device 30. The current sensor 44 is arranged between the upper arm of the V-phase arm 24 and the connection point between the upper and lower arms of the V-phase arm 24, detects the current flowing from the V-phase arm 24 to the output line VL, and detects the detected value. Is output to the control device 30. Current sensor 46 is disposed between the upper arm of W-phase arm 26 and the connection point between the upper and lower arms of W-phase arm 26, detects a current flowing from W-phase arm 26 to output line WL, and detects the detected value. Is output to the control device 30.

  Control device 30 generates a control signal for driving motor generator MG based on the input voltage of inverter 20 and the motor current and torque command value of motor generator MG, and outputs the generated control signal to inverter 20. . Here, the motor current of motor generator MG is detected by current sensors 42, 44, and 46 described above. The input voltage of the inverter 20 is detected by a voltage sensor (not shown).

  In this motor drive device 10, each of U-phase arm 22, V-phase arm 24 and W-phase arm 26 in inverter 20 is connected to an upper arm, a lower arm, a positive electrode connected to power supply line PL, and ground line SL. The negative electrode, the output electrode connected to the corresponding output line, and the corresponding current sensor are configured by a semiconductor module integrally fixed and sealed with a mold resin. Below, the structure of this semiconductor module is demonstrated.

  FIG. 2 is a cross-sectional view showing a configuration of a semiconductor module constituting each phase arm of inverter 20 shown in FIG. In addition, since the structure of each phase arm of the inverter 20 is the same, hereinafter, the semiconductor module constituting the U-phase arm 22 of the inverter 20 shown in FIG. 1 will be described as a representative.

  Referring to FIG. 2, the semiconductor module 52 includes npn transistors Q1 and Q2, spacers 66 and 68, diodes D1 and D2, not shown, a positive electrode plate 70, an electrode plate 72, and an output electrode plate 74. , Negative electrode plate 76, conductor 78, current sensor 42, and mold resin 84. The semiconductor module 52 is sandwiched from both sides by the insulating plates 54 and 56, and is further sandwiched from both sides by the coolers 58 and 60, thereby being cooled from both sides.

  The npn transistor Q1 has an emitter side fixed to the positive electrode plate 70 and is electrically connected to the positive electrode plate 70. The spacer 66 is provided to secure a space for arranging the current sensor 42 and a wiring space for a control signal line (not shown). The spacer 66 is made of a conductor, and is fixed to the collector portion of the npn transistor Q1, and the side facing the junction is fixed to the electrode plate 72. Therefore, the npn transistor Q1 is also electrically connected to the electrode plate 72.

  The npn transistor Q2 has an emitter side fixed to the output electrode plate 74 and is electrically connected to the output electrode plate 74. The spacer 68 is provided to secure an arrangement space for the current sensor 42 and the like, like the spacer 66. The spacer 68 is also made of a conductor, and is fixed to the collector portion of the npn transistor Q2, and the side facing the junction is fixed to the negative electrode plate 76. Therefore, the npn transistor Q2 is also electrically connected to the negative electrode plate 76.

  Positive electrode plate 70, electrode plate 72, output electrode plate 74, and negative electrode plate 76 are made of a highly conductive and highly heat conductive metal member such as copper. The positive electrode plate 70 and the output electrode plate 74 are disposed on the same plane, and the electrode plate 72 and the negative electrode plate 76 are substantially parallel to the plane on which the positive electrode plate 70 and the output electrode plate 74 are disposed. They are arranged on the same plane. Positive electrode plate 70 and electrode plate 72 are provided so as to sandwich npn transistor Q1 and spacer 66 and diode D1 (not shown) from both sides. Output electrode plate 74 and negative electrode plate 76 are formed of npn transistor Q2 and spacer. 68 and a diode D2 (not shown) are provided so as to be sandwiched from both sides.

  The conductor 78 is disposed between the electrode plate 72 and the output electrode plate 74, and electrically connects the electrode plate 72 to the output electrode plate 74. Here, the output terminal to which the output line UL is connected is provided on the output electrode plate 74, and the conductor 78 supplies the positive electrode plate 72 by electrically connecting the electrode plate 72 to the output electrode plate 74. Current flows through the npn transistor Q1, the spacer 66, the electrode plate 72, the conductor 78, and the output electrode plate 74 to the output line UL.

  The current sensor 42 is disposed in the vicinity of the conductor 78 and detects a current flowing through the conductor 78. That is, the current sensor 42 detects the current that flows from the positive electrode plate 70 to the output electrode plate 74 when the npn transistor Q1 that constitutes the upper arm is turned on. In other words, the current sensor 42 detects the output current output from the U-phase arm 22 of the inverter 20 to the output line UL. The configuration of the current sensor 42 will be described in detail later.

  The mold resin 84 includes the npn transistors Q1 and Q2, the spacers 66 and 68, the diodes D1 and D2, not shown, the positive electrode plate 70, the electrode plate 72, the output electrode plate 74, the negative electrode plate 76, the conductor 78, and the current. The sensor 80 is integrally fixed and sealed. However, the surfaces of the positive electrode plate 70 and the output electrode plate 74 facing the insulating plate 54 and the surfaces of the electrode plate 72 and the negative electrode plate 76 facing the insulating plate 56 are covered with a mold resin 84 to reduce thermal resistance. I have not been told.

  FIG. 3 is an enlarged perspective view showing the vicinity of the current sensor 42 shown in FIG. With reference to FIG. 3, the current sensor 42 includes a magnetic flux collecting core 80, a magnetic detection element 82, and a sensor substrate 83. The magnetic flux collecting core 80 is disposed so as to surround the conductor 78 and collects magnetic flux generated around the conductor 78 in accordance with the amount of current flowing through the conductor 78.

  The magnetic detection element 82 is composed of, for example, a Hall element. The magnetic detection element 82 detects the magnetic flux collected by the magnetic collection core 80, generates a voltage corresponding to the magnitude of the detected magnetic flux, and outputs the voltage to the sensor substrate 83 via the lead wire. The sensor substrate 83 is disposed on the positive electrode plate 70, and a signal processing circuit (not shown) is formed on the upper surface. The signal processing circuit formed on the sensor substrate 83 converts the voltage received from the magnetic detection element 84 via the lead wire into a current detection signal, and the converted current detection signal is sent to the outside via the current sensor signal line 86. Output.

  FIG. 4 is an external view of the semiconductor module 52 shown in FIG. Referring to FIG. 4, positive electrode plate 70 and output electrode plate 74 are arranged on the same plane, and the surface facing npn transistors Q1 and Q2 (not shown, the same applies hereinafter) faces the mold. It is exposed to the outside without being covered with the resin 84. The positive electrode plate 70 is provided with a positive electrode terminal 88 connected to the power supply line PL, and the output electrode plate 74 is provided with an output terminal 90 connected to the output line UL. In addition, a negative electrode plate 92 (not shown) provided on a surface opposite to a surface on which the output electrode plate 70 and the output electrode plate 74 are provided is provided with a negative electrode terminal 92 connected to the ground line SL.

  The control signal line 94 is a signal line for driving the npn transistor Q1 from an external control device 30 (not shown, the same applies hereinafter), and the control signal line 96 is connected to the npn transistor Q2 from the control device 30. This is a signal line for driving. The current sensor signal line 86 is a signal line for taking out a current detection signal from the current sensor 42 built in the semiconductor module 52 to the outside. The control signal lines 94 and 96 and the current sensor signal line 86 are drawn to the outside from the same plane of the semiconductor module 52 in consideration of assembly.

  As described above, according to the semiconductor module 52 according to the first embodiment, since the current sensor 42 for detecting the output current is built in, it is conventionally disposed between the inverter 20 and the motor generator MG. It is not necessary to secure a mounting space for the current sensor 42. Therefore, it is possible to contribute to miniaturization of a system in which the semiconductor module 52 is mounted. In addition, since the signal harness between the current sensor 42 and the control device 30 is also shortened, it can contribute to cost reduction of the system.

  Furthermore, since the current sensor signal line 86 from the current sensor 42 built in the semiconductor module 52 is drawn from the same plane as the control signal lines 94 and 96 for driving the upper and lower arms, this semiconductor module 52 is used. The assembling property when configuring the motor drive device 10 is improved. Furthermore, since the semiconductor module 52 is integrally fixed and sealed by the mold resin 84, it is excellent in earthquake resistance and moisture resistance.

[Embodiment 2]
The semiconductor module according to the second embodiment differs from the semiconductor module 52 according to the first embodiment in the configuration of the current sensor. Other configurations of the semiconductor module according to the second embodiment are the same as those of the semiconductor module 52 according to the first embodiment.

  FIG. 5 is an enlarged perspective view showing the vicinity of a current sensor built in a semiconductor module according to Embodiment 2 of the present invention. Referring to FIG. 5, this current sensor 42 </ b> A includes a magnetic flux collecting core 80 and a sensor substrate 98. The sensor substrate 98 is a so-called surface-mounted device (SMD: Surface-Mounted Device), and a magnetic detection element 82 </ b> A composed of a Hall element is disposed on the sensor substrate 98.

  The sensor substrate 98 is fitted into the fitting portion 100 provided on the positive electrode plate 70, and the magnetic detection element 82 </ b> A is disposed on the magnetic flux collecting core 80 when the sensor substrate 98 is fitted into the fitting portion 100. It arrange | positions on the sensor board | substrate 98 so that it may be arrange | positioned at an open end part.

  According to the second embodiment, the current sensor 42A built in the semiconductor module is not a lead wire type device in which the magnetic detection element is connected to the sensor substrate by a lead wire, but a surface mount type device. A semiconductor module with excellent sensor assembly is realized. In addition, the earthquake resistance of the semiconductor module is improved.

[Embodiment 3]
In the semiconductor module according to the third embodiment, the built-in current sensor is constituted by a shunt resistor.

  FIG. 6 is a circuit diagram of a U-phase arm to which the semiconductor module according to the third embodiment of the present invention is applied. Although not particularly shown, the circuit diagrams of the other V and W phase arms are also the same. Referring to FIG. 6, this U-phase arm 22A includes npn transistors Q1 and Q2, diodes D1 and D2 connected in antiparallel to npn transistors Q1 and Q2, shunt resistor 102, and current measurement circuit, respectively. 112.

  The shunt resistor 102 is disposed between the npn transistors Q1 and Q2, and the output line UL is connected to a connection point between the shunt resistor 102 and the npn transistor Q2. The current measurement circuit 112 measures the voltage drop due to the shunt resistor 102 and divides the measured voltage drop value by the resistance value of the shunt resistor 102 to calculate the current flowing from the npn transistor Q1 to the output line UL.

  FIG. 7 is a schematic configuration diagram of a current sensor built in a semiconductor module according to Embodiment 3 of the present invention. Referring to FIG. 7, current sensor 42 </ b> B includes shunt resistor 102, insulating plate 103, voltage lead line 104, sensor substrate 106, and wires 108 and 110. The shunt resistor 102 has one end connected to the output electrode plate 74 and the other end connected to an electrode plate 72 (not shown, the same applies hereinafter). When the npn transistor Q1 is turned on, the shunt resistor 102 causes a current to flow from the electrode plate 72 to the output electrode plate 74 and causes a voltage drop corresponding to the flowing current.

  The voltage lead line 104 is made of a very low resistance conductor, and is provided between the insulating plate 103 and the electrode plate 72 disposed on the output electrode plate 74. The voltage lead line 104 is provided to take out the voltage before the voltage drop by the shunt resistor 102. The sensor substrate 106 is disposed on the output electrode plate 74, and the current measurement circuit 112 (not shown, the same applies hereinafter) shown in FIG. 6 is formed on the upper surface. The current measurement circuit 112 measures the value of the current flowing through the shunt resistor 102 based on the voltage drop in the shunt resistor 102 and outputs the measured value to the outside via the current sensor signal line 86.

  In the semiconductor module according to the third embodiment, the shunt resistor 102 electrically connects the output electrode plate 74 to the electrode plate 72, and the shunt resistor 102 causes a current to flow from the electrode plate 72 to the output electrode plate 74. The semiconductor module according to the third embodiment does not include the conductor 78 in the first embodiment. Other configurations of the semiconductor module according to the third embodiment are the same as those of the semiconductor module 52 according to the first embodiment.

  As described above, according to the third embodiment, since the current sensor is configured by the shunt resistor 102, it is generally unnecessary to provide an expensive magnetic flux collecting core, and the cost can be reduced.

[Embodiment 4]
8 is a cross-sectional view showing a configuration of a semiconductor module according to Embodiment 4 of the present invention, and FIG. 9 is a plan view of the semiconductor module shown in FIG. The semiconductor modules shown in FIGS. 8 and 9 also constitute the respective phase arms of the inverter 20 shown in FIG. And since the structure of each phase arm of the inverter 20 is the same, the semiconductor module which comprises the U-phase arm 22 of the inverter 20 is typically demonstrated below. 8 shows a section VIII-VIII shown in FIG. 9, and FIG. 9 does not show the spacers 66, 68, the electrode plate 72, and the negative electrode plate 76 shown in FIG.

  8 and 9, semiconductor module 52A according to the fourth embodiment includes npn transistors Q1 and Q2, spacers 66 and 68, diodes D1 and D2, pattern circuits 114 and 116, and an insulating substrate. 118, a heat radiating plate 120, an electrode plate 72, a negative electrode plate 76, a conductor 78, a current sensor 42C, and a mold resin 84.

  The pattern circuits 114 and 116 are made of a highly conductive and highly heat conductive metal member such as copper, and are formed on the insulating substrate 118. The pattern circuit 114 is connected to the positive terminal 122 by a wire 128, and constitutes a positive electrode. The pattern circuit 116 is connected to the output terminal 124 by a wire 130 and constitutes an output electrode.

  The npn transistor Q1 and the diode D1 are mounted on the pattern circuit 114, and the npn transistor Q2 and the diode D2 are mounted on the pattern circuit 116. The conductor 78 is disposed on the pattern circuit 116 and electrically connects the electrode plate 72 to the pattern circuit 116.

  The insulating substrate 118 is disposed on the heat sink 120 and insulates the pattern circuits 114 and 116 from the heat sink 120. The heat radiating plate 120 is made of a copper plate or aluminum plate having a high thermal conductivity, and radiates heat generated in the semiconductor module 52A to the cooler 58.

  The current sensor 42 </ b> C includes a magnetic collecting core 80, a magnetic detection element 82, and a sensor circuit unit 119. The sensor circuit unit 119 is formed on the insulating substrate 118 and in the vicinity of the conductor 78. That is, a part of the insulating substrate 118 is used for the sensor substrate of the current sensor 42A. The sensor circuit unit 119 converts the voltage received from the magnetic detection element 82 via the lead wire into a current detection signal, and outputs the converted current detection signal to the terminal 126 via the wire 132.

  In the semiconductor module 52A according to the fourth embodiment, the insulating substrate 118 is built in the semiconductor module 52A and integrally molded. Therefore, as shown in FIG. 8, when assembling the coolers 58 and 60 to the semiconductor module 52A, it is not necessary to sandwich an insulating substrate between the semiconductor module 52A and the cooler 58. When the semiconductor module, the insulating plate, and the cooler are assembled in an overlapping manner, it is necessary to apply silicon grease to the contact surface for adhesion and thermal resistance reduction. If this semiconductor module 52A is used, Compared with the case where the semiconductor module 52 according to the first embodiment is used, one surface to which the silicon grease is applied is reduced.

  As described above, according to the fourth embodiment, since the insulating substrate 118 is built in the semiconductor module 52A and molded integrally, the assembling property when the coolers 58 and 60 are assembled to the semiconductor module 52A is improved. improves. Moreover, since the surface which apply | coats silicon grease can be reduced, the assembly | attachment property at the time of assembling | cooling the coolers 58 and 60 to the semiconductor module 52A improves also from this point.

  Furthermore, since the heat radiating plate 120 can be constituted by one piece over one surface of the semiconductor module 52A, the assembling property of the semiconductor module 52A is excellent, and the number of parts when assembling the semiconductor module 52A can be reduced.

  In each of the above embodiments, the case where the semiconductor module according to the present invention is applied to each phase arm of the inverter 20 is shown as an example of application of the semiconductor module according to the present invention. It is not intended to be applied to other semiconductor devices in general.

  The semiconductor module according to the present invention is suitable for a hybrid vehicle and an electric vehicle. A hybrid vehicle is a vehicle that uses a battery, an inverter, and a motor driven by the inverter as a power source in addition to a conventional engine. An electric vehicle is a vehicle that uses a battery, an inverter, and a motor driven by the inverter as a power source. In such hybrid vehicles and electric vehicles, a large number of power semiconductor elements are used in electronic components such as inverters and converters. In hybrid vehicles and electric vehicles, there is a strong demand for downsizing, cost reduction, high reliability, etc. According to the semiconductor module according to the present invention, as described above, downsizing of the vehicle system is required. In addition, it contributes to cost reduction, and high reliability can be obtained by ensuring earthquake resistance and moisture resistance.

  In the above description, npn-type transistor Q1 and diode D1 constitute a “semiconductor element portion”, and npn-type transistor Q2 and diode D2 constitute “another semiconductor element portion”. Further, the positive electrode plate 70, the electrode plate 72, the output electrode plate 74, and the negative electrode plate 76 constitute “first to fourth electrodes”, respectively, and the conductor 78 constitutes “a conductive portion”. Further, the control signal lines 94 and 96 constitute “first and second signal lines”, respectively, and the current sensor signal line 86 constitutes “third signal line”. Furthermore, the sensor board 98 constitutes a “current sensor circuit board”, and the shunt resistor 102 constitutes a “resistance”.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and is intended to include meanings equivalent to the scope of claims for patent and all modifications within the scope.

1 is a circuit diagram of a motor driving device shown as an example of a device in which a semiconductor module according to Embodiment 1 of the present invention is used. It is sectional drawing which shows the structure of the semiconductor module which comprises each phase arm of the inverter shown in FIG. It is a perspective view which expands and shows the vicinity of the current sensor shown in FIG. FIG. 3 is an external view of the semiconductor module shown in FIG. 2. It is a perspective view which expands and shows the vicinity of the current sensor incorporated in the semiconductor module by Embodiment 2 of this invention. It is a circuit diagram of the U-phase arm to which the semiconductor module according to the third embodiment of the present invention is applied. It is a schematic block diagram of the current sensor incorporated in the semiconductor module by Embodiment 3 of this invention. It is sectional drawing which shows the structure of the semiconductor module by Embodiment 4 of this invention. It is a top view of the semiconductor module shown in FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 Motor drive device, 20 Inverter, 22 U-phase arm, 24 V-phase arm, 26 W-phase arm, 30 Control device, 42, 42A-42C, 44, 46 Current sensor, 52, 52A Semiconductor module, 54, 56, 118 Insulating substrate, 58, 60 cooler, 66, 68 spacer, 70 positive electrode plate, 72 electrode plate, 74 output electrode plate, 76 negative electrode plate, 78 conductor, 80 magnetic flux collecting core, 82, 82A magnetic detection element, 83, 98, 106 Sensor substrate, 84 Mold resin, 86 Current sensor signal line, 88, 122 Positive terminal, 90, 124 Output terminal, 92 Negative terminal, 94, 96 Control signal line, 100 Fitting part, 102 Shunt resistance, 103 Insulation Plate, 104 voltage leader, 108, 110, 128, 130, 132 wire, 112 current measurement Path, 114, 116 pattern circuit, 119 sensor circuit section, 120 heat sink, 126 terminal, B battery, C capacitor, MG motor generator, PL power supply line, SL ground line, UL, VL, WL output line, Q1-Q6 npn Type transistor, D1-D6 diode.

Claims (8)

A semiconductor element section;
First and second electrodes provided so as to sandwich the semiconductor element portion from both sides;
A third electrode disposed on the same plane as the first electrode and connected to an output terminal;
A conductive portion disposed between the second electrode and the third electrode and electrically connecting the second electrode to the third electrode;
A semiconductor module comprising: a current sensor that is disposed in the conductive portion and detects a current flowing through the conductive portion. A fourth electrode disposed on the same plane as the second electrode;
And further comprising another semiconductor element portion provided to be sandwiched between the third and fourth electrodes from both sides,
The semiconductor element portion and the other semiconductor element portion constitute an upper arm and a lower arm, respectively.
The first and fourth electrodes are a positive electrode and a negative electrode, respectively.
The semiconductor module according to claim 1, wherein the third electrode is an output electrode that outputs a current to an electric load.   3. The mold resin according to claim 1, further comprising a mold resin for fixing and sealing the semiconductor element part, the other semiconductor element part, the first to fourth electrodes, the conductive part, and the current sensor. Semiconductor module. The current sensor is
An electromagnetic core disposed so as to surround the conductive portion;
4. The semiconductor module according to claim 1, further comprising: a magnetic detection element that detects a magnetic flux collected by the electromagnetic core. 5. The current sensor is
A current sensor circuit board;
A current sensor circuit disposed on the current sensor circuit board,
The magnetic detection element is surface-mounted on the current sensor circuit board,
The semiconductor module according to claim 4, wherein the current sensor circuit board is disposed so that the magnetic detection element is positioned at an open end of the electromagnetic core. An insulating substrate on which the first and third electrodes are mounted;
The current sensor further includes a current sensor circuit for operating the magnetic detection element,
The semiconductor module according to claim 1, wherein the current sensor circuit is disposed on the insulating substrate. First and second signal lines for driving the semiconductor element portion and the other semiconductor element portion, respectively;
A third signal line for outputting a detection signal from the current sensor to the outside,
The semiconductor module according to claim 1, wherein the first to third signal lines are led out from the same plane of the semiconductor module. A semiconductor element section;
First and second electrodes provided so as to sandwich the semiconductor element portion from both sides;
A third electrode disposed on the same plane as the first electrode and connected to an output terminal;
Between the second electrode and the third electrode, electrically connecting the second electrode to the third electrode, and between the second electrode and the third electrode A resistor that causes a constant voltage drop according to the current passed between,
A semiconductor module comprising: a current measurement circuit that measures a current flowing through the resistor based on the voltage drop amount due to the resistor and the magnitude of the resistor.

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