JP2002334995A5 - - Google Patents

Claims (7)

A first semiconductor film, a second semiconductor film, and a third semiconductor film that are separated from each other are formed on the first insulating film, and a first semiconductor film, a second semiconductor film, and a third semiconductor film are formed on the first semiconductor film, the second semiconductor film, and the third semiconductor film. Forming two insulating films, corresponding to the first semiconductor film, the second semiconductor film, and the third semiconductor film, forming a first electrode having a first shape, a second electrode, and a third electrode; One-conductivity type impurity region having a first concentration in the first semiconductor film, the second semiconductor film, and the third semiconductor film by a first doping process using the one-shaped first electrode, second electrode, and third electrode as a mask And forming a first electrode of the second shape, a second electrode, and a third electrode from the first electrode of the first shape, the second electrode, and the third electrode. and forming a one conductivity type impurity region of the second concentration overlapped with the second electrode of the second shape in the second semiconductor layer, said first semiconductor One conductivity type impurity region of the third concentration to form formed in the film and the second semiconductor film, the third doping process, the third fourth impurity regions and the fifth opposite conductivity type to the one conductivity type into the semiconductor film A method for manufacturing a semiconductor device, including a step of forming an impurity region. Forming a second insulating film on the first semiconductor film, the second semiconductor film, and the third semiconductor film formed on the first insulating film; and a first conductive film and a second conductive film on the second insulating film; A step of stacking and forming two conductive films, and etching the first conductive film and the second conductive film by a first etching process to correspond to the first semiconductor film, the second semiconductor film, and the third semiconductor film. A step of forming a first electrode having a single shape, a second electrode, and a third electrode; and a first doping process, wherein the first semiconductor film, the second semiconductor film, and the third semiconductor film have one conductivity of a first concentration. Forming the first impurity region, and etching the first electrode, the second electrode, and the third electrode of the first shape by the second etching process, and the second electrode, the second electrode, A step of forming three electrodes and a second concentration in the second semiconductor film by a second doping process. To form the conductive type impurity region, and forming a one conductivity type impurity region of the third concentration to the first semiconductor film and the second semiconductor film, by the third doping process, one conductivity type in the third semiconductor film Forming a fourth impurity region and a fifth impurity region having a conductivity type opposite to that of the semiconductor device. A first semiconductor film, a second semiconductor film, and a third semiconductor film that are separated from each other are formed on the first insulating film, and a first electrode having a first shape is formed on the first semiconductor film as the second insulating film. A first conductivity type impurity region is formed in the first semiconductor film by a first doping process using the first electrode of the first shape as a mask , and the second semiconductor film and the second semiconductor film A second electrode and a third electrode having a first shape are formed on the semiconductor film through the second insulating film, and the second electrode and the third electrode having the first shape are etched to form a second shape. the second electrode and the third electrode is formed of, the second doping process, thereby forming a one conductivity type impurity region of the second concentration overlapped with the second electrode of the second shape to said second semiconductor layer, said first one conductivity type impurity region of the third concentration to form formed on one semiconductor layer and the second semiconductor film, the third dough The packaging process, a method for manufacturing a semiconductor device, wherein the the one conductivity type third semiconductor film comprising a step of forming a fourth impurity region and the fifth impurity region of opposite conductivity type. Forming a second insulating film on the first semiconductor film, the second semiconductor film, and the third semiconductor film formed on the first insulating film; and a first conductive film and a second conductive film on the second insulating film; A step of forming two conductive films, a step of etching the first conductive film and the second conductive film by a first etching process to form a first electrode on the first semiconductor film, Forming a first conductivity type impurity region in the first semiconductor film using the first electrode of the first shape as a mask by a first doping process; and a second etching process to form the first conductive film and the first conductive film Etching the second conductive film to form a second electrode and a third electrode having the first shape on the second semiconductor film and the third semiconductor film; and a second electrode having the first shape by a third etching process. And the third electrode are etched to form a second electrode of the second shape and Forming a third electrode, and forming a one conductivity type impurity region of the second density in the second semiconductor film by the second doping process, the third concentration in the first semiconductor film and the second semiconductor film one A step of forming a conductive impurity region; and a step of forming a fourth impurity region and a fifth impurity region of a conductivity type opposite to the one conductivity type in the third semiconductor film by a third doping process. A method for manufacturing a semiconductor device.   5. The first conductive film according to claim 1, wherein the first conductive film is formed of a compound of one or more selected from Ta, W, Ti, and Mo and nitrogen, and the second conductive film is formed of Ta. A method for manufacturing a semiconductor device, wherein the semiconductor device is formed of one or more kinds of alloys selected from W, Ti, and Mo.   5. The method for manufacturing a semiconductor device according to claim 1, wherein the second conductive film is formed using a film containing silicon as a main component.   5. The method for manufacturing a semiconductor device according to claim 1, wherein the second conductive film is formed using a film containing aluminum or copper as a main component.