JP2002208491A - Self-illuminating display device - Google Patents
Self-illuminating display deviceInfo
- Publication number
- JP2002208491A JP2002208491A JP2001342820A JP2001342820A JP2002208491A JP 2002208491 A JP2002208491 A JP 2002208491A JP 2001342820 A JP2001342820 A JP 2001342820A JP 2001342820 A JP2001342820 A JP 2001342820A JP 2002208491 A JP2002208491 A JP 2002208491A
- Authority
- JP
- Japan
- Prior art keywords
- light
- electrode
- self
- display device
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001154 acute effect Effects 0.000 claims abstract description 11
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- 238000005192 partition Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 63
- 239000010408 film Substances 0.000 description 53
- 239000000758 substrate Substances 0.000 description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 239000011521 glass Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 239000000284 extract Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、自己発光型表示装
置に関する。The present invention relates to a self-luminous display device.
【0002】[0002]
【従来の技術】画素の光変調層として発光ダイオード、
液晶、有機EL(Electro Luminescence)等を用いた表
示装置は、表示部の薄型化が可能であるため、事務機器
やコンピュータ等の表示装置に限らず、その適用範囲を
拡大する傾向にある。これらの表示装置の中で、有機E
Lを用いた有機自己発光型表示装置はLCD(液晶表示
装置)と比較して次のa〜d項に示す利点を有してい
る。2. Description of the Related Art Light emitting diodes are used as light modulation layers of pixels,
A display device using a liquid crystal, an organic EL (Electro Luminescence), or the like can reduce the thickness of a display portion. Therefore, the display device is not limited to a display device such as an office machine or a computer, and has a tendency to expand its application range. Among these display devices, organic E
The organic self-luminous display device using L has the advantages described in the following items a to d as compared with an LCD (liquid crystal display device).
【0003】a.自己発光型であるため、鮮明な表示と
広い視野角が得られ、さらに、バックライトが不要にな
ることから低消費電力化、軽量化及び薄型化が可能であ
る。 b.応答速度が速く、例えば、LCDではミリ秒(mse
c)のオーダであるのに対して有機自己発光型表示装置
ではマイクロ秒(μsec)のオーダである。 c.固層による発光であるため、使用温度範囲が広がる
可能性がある。A. Since it is a self-luminous type, a clear display and a wide viewing angle can be obtained, and further, since a backlight is not required, low power consumption, light weight, and thinness can be achieved. b. The response speed is fast, for example, milliseconds (mse
In contrast to the order of c), in the case of the organic self-luminous display device, it is of the order of microseconds (μsec). c. Since light is emitted by the solid layer, the operating temperature range may be widened.
【0004】これらの利点のために、その開発が盛んに
進められている。特に、多結晶シリコンを用いたTFT
(薄膜トランジスタ)と組み合わせることにより、高精
細表示が可能なアクティブマトリクス構成とした多結晶
シリコンTFT型有機自己発光型パネルの研究開発が盛
んに行われている。[0004] Due to these advantages, their development has been actively pursued. In particular, TFTs using polycrystalline silicon
Research and development of a polycrystalline silicon TFT type organic self-luminous panel having an active matrix structure capable of high-definition display by being combined with a (thin film transistor) have been actively conducted.
【0005】図7はこの種の従来の有機自己発光型表示
装置を構成するアレイ基板の概略断面図を示す。陽極1
09及び陰極115間に有機発光層113を含む有機薄
膜層が保持され、この有機発光層113に電子及び正孔
を注入して再結合させることにより、励起子を生成し、
これが失活する際の光の放出を利用して発光する。FIG. 7 is a schematic sectional view of an array substrate constituting a conventional organic self-luminous display of this type. Anode 1
09 and an organic thin film layer including an organic light emitting layer 113 are held between the cathode 115 and electrons and holes are injected and recombined into the organic light emitting layer 113 to generate excitons,
It emits light using the emission of light when it is deactivated.
【0006】有機自己発光型表示装置は、図7に示すよ
うに、多結晶シリコン層103、ゲート絶縁膜104、
ゲート電極105及びソース・ドレイン電極107でな
る駆動TFTに接続された陽極109上を開口するパッ
シベーション膜110及び隔壁絶縁膜111が形成され
ている。As shown in FIG. 7, an organic self-luminous display device has a polycrystalline silicon layer 103, a gate insulating film 104,
A passivation film 110 and a partition insulating film 111 are formed on the anode 109 connected to the driving TFT including the gate electrode 105 and the source / drain electrodes 107.
【0007】[0007]
【発明が解決しようとする課題】従来、有機自己発光型
表示装置の発光強度は、LCDの発光強度(100〜1
50nt)の約半分であった。また、隣接画素間でのク
ロストークの発生、特にカラー表示に際してはR,G,
Bの各色が形成される表示画素の隣接画素間で、色が混
ざりコントラストが低下していた。Conventionally, the luminous intensity of an organic self-luminous display device is the luminous intensity of an LCD (100 to 1).
50 nt). In addition, the occurrence of crosstalk between adjacent pixels, particularly, in the case of color display, R, G,
The colors are mixed between the adjacent pixels of the display pixel where each color of B is formed, and the contrast is reduced.
【0008】本発明は、上記の問題点を解決するために
なされたものであって、光出射面への光の取り出し効率
を向上させることのできる自己発光型表示装置を提供す
ることを目的とする。また、この発明は隣接画素間での
クロストークが抑えられた自己発光型表示装置を提供す
ることを目的としている。The present invention has been made to solve the above problems, and has as its object to provide a self-luminous display device capable of improving the efficiency of extracting light to a light exit surface. I do. Another object of the present invention is to provide a self-luminous display device in which crosstalk between adjacent pixels is suppressed.
【0009】[0009]
【課題を解決するための手段】請求項1に係る発明は、
島状に形成された複数の第1電極と、前記第1電極に対向
配置される第2電極と、前記第1および第2電極間に保持
され、少なくとも発光層を含む自己発光部を備えた複数
の表示画素をマトリクス状に配置し、前記第1および第2
電極のいずれか一方を光出射面とする自己発光表示装置
において、一表示画素から隣接する他の表示画素に向か
う光を前記光出射面側に取り出す光反射面を前記一表示
画素と前記他の表示画素間に設けたことを特徴とする。
請求項2に係る発明は、請求項1記載の自己発光型表示
装置において、前記第1電極をそれぞれ電気的に絶縁す
る隔壁をさらに備え、前記第1又は第2電極のうち、前
記発光層を介して前記光出射面と対向配置される側の電
極の形成面が、個々の前記表示画素の端辺に形成された
前記隔壁の開口の傾斜角により、光出射面に対して鋭角
をなす前記光反射面を形成することを特徴とする。According to the first aspect of the present invention,
A plurality of first electrodes formed in an island shape, a second electrode disposed to face the first electrode, and a self-luminous portion held between the first and second electrodes and including at least a light-emitting layer. A plurality of display pixels are arranged in a matrix, and the first and second display pixels are arranged in a matrix.
In a self-luminous display device having one of the electrodes as a light emitting surface, a light reflecting surface that extracts light heading from one display pixel to another adjacent display pixel to the light emitting surface side is the one display pixel and the other. It is characterized by being provided between display pixels.
The invention according to claim 2 is the self-luminous display device according to claim 1, further comprising a partition wall for electrically insulating the first electrodes, and the light emitting layer of the first or second electrode. The formation surface of the electrode on the side disposed opposite to the light exit surface is formed at an acute angle with respect to the light exit surface by the inclination angle of the opening of the partition wall formed at the edge of each display pixel. A light reflecting surface is formed.
【0010】請求項3に係る発明は、請求項2記載の自
己発光型表示装置において、第2電極は、複数の表示画
素に亘って、連続して形成されることを特徴とする。According to a third aspect of the present invention, in the self-luminous display device according to the second aspect, the second electrode is formed continuously over a plurality of display pixels.
【0011】請求項4に係る発明は、請求項2記載の自
己発光型表示装置において、光出射面と対向配置される
側の電極の形成面が、個々の表示画素の端辺全周におい
て、光出射面に対して、鋭角をなすよう形成されること
を特徴とする。According to a fourth aspect of the present invention, in the self-luminous display device according to the second aspect, the electrode forming surface on the side opposed to the light emitting surface is provided on the entire periphery of the edge of each display pixel. It is characterized by being formed so as to form an acute angle with respect to the light emitting surface.
【0012】請求項5に係る発明は、請求項2記載の自
己発光型表示装置において、複数の第1電極は、それぞ
れ隔壁絶縁膜により電気的に絶縁されており、隔壁絶縁
膜を覆う全面に第2電極が形成され、表示画素端辺の隔
壁絶縁膜に形成された開口の傾斜角により、第2電極が
個々の表示画素の端辺において、光出射面に対して、鋭
角をなすよう形成されることを特徴とする。According to a fifth aspect of the present invention, in the self-luminous display device according to the second aspect, each of the plurality of first electrodes is electrically insulated by a partition insulating film, and is provided on the entire surface covering the partition insulating film. The second electrode is formed, and the second electrode is formed to form an acute angle with respect to the light emitting surface at the edge of each display pixel due to the inclination angle of the opening formed in the partition insulating film on the edge of the display pixel. It is characterized by being performed.
【0013】[0013]
【発明の実施の形態】以下、本発明の好適な実施形態に
ついて図面を参照して詳細に説明する。図1は本発明の
第1の実施形態を示す有機自己発光型表示装置の概略平
面図、図2はその概略断面図を示す。この自己発光型表
示装置の表示領域は、図3(a)に拡大図を示すように
マトリクス状に配置された複数の表示画素1より構成さ
れており、図3(b)は1表示画素分の概略平面図であ
り、また、図4(a)は1表示画素分の概略断面図、図
4(b)はその特徴部分の拡大断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a schematic plan view of an organic self-luminous display device according to a first embodiment of the present invention, and FIG. 2 is a schematic sectional view thereof. The display area of this self-luminous display device is composed of a plurality of display pixels 1 arranged in a matrix as shown in an enlarged view in FIG. 3A, and FIG. 4A is a schematic sectional view of one display pixel, and FIG. 4B is an enlarged sectional view of a characteristic portion thereof.
【0014】有機自己発光型表示装置は、表示画素が構
成されたアレイ基板と、アレイ基板に対向配置される対
向基板とが、窒素雰囲気中で封止されて構成される。本
実施形態において、表示面はアレイ基板側で、光は陽極
を介して外部に取り出される。An organic self-luminous display device is configured by sealing an array substrate on which display pixels are formed and a counter substrate disposed to face the array substrate in a nitrogen atmosphere. In the present embodiment, the display surface is on the array substrate side, and light is extracted outside via the anode.
【0015】アレイ基板は、図1に示すように、表示画
素がマトリクス状に形成される表示領域120と、基板
の2辺に配置されるX方向駆動回路121、Y方向駆動
回路123を備えた周辺領域とから構成され、各表示画
素は、図5に示すように、ソースが信号線41に接続さ
れ、ゲートがゲート線43に接続されて表示画素を選択
する画素スイッチである画素TFT44と、画素TFT
44のドレインにゲートが接続され、ソースが電流供給
線42に接続された駆動素子である駆動TFT45から
供給された電流により発光する表示素子46とを備えて
構成される。As shown in FIG. 1, the array substrate has a display area 120 in which display pixels are formed in a matrix, and an X-direction drive circuit 121 and a Y-direction drive circuit 123 arranged on two sides of the substrate. As shown in FIG. 5, each of the display pixels includes a pixel TFT 44 which is a pixel switch that has a source connected to the signal line 41 and a gate connected to the gate line 43 to select a display pixel. Pixel TFT
A display element 46 is provided which has a gate connected to the drain of 44 and a source connected to the current supply line 42 and emits light by a current supplied from a driving TFT 45 which is a driving element.
【0016】図4(a)には各表示画素の一部概略断面
図を示す。ここで図示されるTFTは、駆動TFTであ
り、表示画素部の一部略縦断面図である。図4(a)に
おいて、光透過性を有する基板101にアンダーコート
層102が積層され、このアンダーコート層102上に
島状に形成された多結晶シリコン層103はソース領域
103a、チャネル領域103b、ドレイン領域103
cに区画されている。この多結晶シリコン層103を含
めたアンダーコート層102の全面にゲート絶縁膜10
4が成膜され、多結晶シリコン層103のチャネル領域
103bに対応する位置にゲート絶縁膜104を介して
ゲート電極105が形成されている。また、多結晶シリ
コン層のソース領域103a、ドレイン領域103bに
それぞれ接続されるソース電極及びドレイン電極は、層
間絶縁膜106によりゲート電極と電気的に絶縁されて
いる。この層間絶縁膜106上の所定の画素領域に透明
部材、例えば、ITO(Indium Tin Oxide)でなる陽極
109が島状に形成され、ドレイン電極と電気的に接続
されている。FIG. 4A is a partial schematic sectional view of each display pixel. The TFT shown here is a driving TFT, and is a partially schematic vertical sectional view of a display pixel portion. In FIG. 4A, an undercoat layer 102 is laminated on a light-transmitting substrate 101, and a polycrystalline silicon layer 103 formed in an island shape on the undercoat layer 102 has a source region 103a, a channel region 103b, Drain region 103
c. The gate insulating film 10 is formed on the entire surface of the undercoat layer 102 including the polycrystalline silicon layer 103.
4 is formed, and a gate electrode 105 is formed at a position corresponding to the channel region 103 b of the polycrystalline silicon layer 103 via a gate insulating film 104. The source electrode and the drain electrode connected to the source region 103a and the drain region 103b of the polycrystalline silicon layer are electrically insulated from the gate electrode by the interlayer insulating film 106. A transparent member, for example, an anode 109 made of ITO (Indium Tin Oxide) is formed in an island shape in a predetermined pixel region on the interlayer insulating film 106, and is electrically connected to a drain electrode.
【0017】そして、この陽極上を開口した無機材料で
なるパッシベーション膜110、有機材料からなる隔壁
絶縁膜111が形成され、少なくとも有機発光層113
を備えた有機薄膜層が陽極上に積層され、この有機薄膜
層を介して陽極と対向して陰極115が複数の画素に亘
って、連続して形成されている。有機薄膜層は、例え
ば、陽極バッファ層112、有機発光層113及び陰極
バッファ層114で構成され、陽極バッファ層112及
び陰極バッファ層114は、無機材料又は有機材料の積
層膜で構成される。Then, a passivation film 110 made of an inorganic material having an opening on the anode and a partition insulating film 111 made of an organic material are formed.
Is laminated on the anode, and the cathode 115 is formed continuously across a plurality of pixels in opposition to the anode through the organic thin film layer. The organic thin film layer includes, for example, an anode buffer layer 112, an organic light emitting layer 113, and a cathode buffer layer 114. The anode buffer layer 112 and the cathode buffer layer 114 are each formed of a laminated film of an inorganic material or an organic material.
【0018】隔壁絶縁膜111は、図3(b)、図4
(a)及び(b)に示すように、隣接表示画素間に開口
を有する。つまり、各表示画素の縁端よりも内側の全周
に亘って隔壁絶縁膜111の開口(斜線領域)31が形
成され、この開口31は隔壁絶縁膜の陽極109側の壁
面を基板に対して鋭角(θ<90°)に、好ましくは4
5度以上に傾斜して形成される。これによって、横方向
に進む光すなわち図4中の光成分P2,P3を、金属膜で
なる陰極115で屈折させて表示面方向に進ませるた
め、表示パネルの発光強度が高められる。The partition insulating film 111 is formed as shown in FIGS.
As shown in (a) and (b), an opening is provided between adjacent display pixels. That is, an opening (shaded area) 31 of the partition insulating film 111 is formed over the entire periphery inside the edge of each display pixel, and the opening 31 is formed by connecting the wall surface of the partition insulating film on the anode 109 side to the substrate. For an acute angle (θ <90 °), preferably 4
It is formed to be inclined at 5 degrees or more. Thereby, the light traveling in the horizontal direction, that is, the light components P2 and P3 in FIG. 4 are refracted by the cathode 115 made of a metal film and proceed toward the display surface, so that the emission intensity of the display panel is increased.
【0019】以下、本実施形態に係る有機自己発光型表
示装置の製造方法について説明する。Hereinafter, a method for manufacturing the organic self-luminous display device according to this embodiment will be described.
【0020】最初に、ガラス基板101を用意し、この
ガラス基板101の一主面に、例えば、膜厚が50nm
のSiNxと膜厚が100nmのSiOxとを積層して
なるアンダーコート層102を形成し、続いて、アンダ
ーコート層102上に、例えば、膜厚50nmの多結晶
シリコン層103を形成し、これをパターニングするこ
とによって薄膜トランジスタの島領域を形成する。First, a glass substrate 101 is prepared, and a film having a thickness of, for example, 50 nm is formed on one main surface of the glass substrate 101.
An undercoat layer 102 formed by laminating SiNx and SiOx having a thickness of 100 nm is formed. Subsequently, a polycrystalline silicon layer 103 having a thickness of, for example, 50 nm is formed on the undercoat layer 102. An island region of the thin film transistor is formed by patterning.
【0021】次に、多結晶シリコン層103を含めたア
ンダーコート層102の全面に、例えば、膜厚が140
nmのSiOxでなるゲート絶縁膜104を成膜し、さ
らに、ゲート絶縁膜104上に、膜厚が300nmのM
oWを堆積すると共に、これをパターニングすることに
よってゲート電極105を形成する。Next, over the entire surface of the undercoat layer 102 including the polycrystalline silicon layer 103, for example,
A gate insulating film 104 of SiOx having a thickness of 300 nm is formed.
The gate electrode 105 is formed by depositing oW and patterning it.
【0022】次に、ゲート絶縁膜104上からゲート電
極105をマスクとしてイオン注入を行うことによっ
て、多結晶シリコン層103のゲート電極の下部に位置
する領域をチャネル領域としてその両側にソース領域及
びドレイン領域を形成する。Next, ion implantation is performed from above the gate insulating film 104 using the gate electrode 105 as a mask, so that a region located below the gate electrode of the polycrystalline silicon layer 103 becomes a channel region, and a source region and a drain region are formed on both sides thereof. Form an area.
【0023】次に、ゲート電極105を含めたゲート絶
縁膜104の全面に、例えば、膜厚が660nmのSi
Oxでなる層間絶縁膜106を成膜し、続いて、ITO
(Indium Tin Oxide)を成膜し、このITOをパターニ
ングすることによって、所定の領域に広がった島状の第
1電極として陽極109を形成する。Next, over the entire surface of the gate insulating film 104 including the gate electrode 105, for example, a 660 nm-thick Si
An interlayer insulating film 106 made of Ox is formed, followed by ITO
(Indium Tin Oxide) is deposited, and this ITO is patterned to form an island-shaped
An anode 109 is formed as one electrode.
【0024】次に、層間絶縁膜106及びゲート絶縁膜
104を貫きソース領域、ドレイン領域に達する孔を開
け、この孔に金属膜、例えば、膜厚50nmのMoと膜
厚450nmのAlと膜厚100nmのMoの積層膜を
埋め込むことにより、ソース・ドレイン電極107を形
成する。これによって、陽極109が駆動TFTのドレ
インに接続される。Next, a hole is formed through the interlayer insulating film 106 and the gate insulating film 104 to reach the source region and the drain region. A metal film such as Mo having a thickness of 50 nm and Al having a thickness of 450 nm are formed in the hole. The source / drain electrodes 107 are formed by embedding a 100 nm Mo laminated film. Thereby, the anode 109 is connected to the drain of the driving TFT.
【0025】次に、陽極109の表面を含む層間絶縁膜
106上に、例えば、膜厚450nmのSiNxでなる
パッシベーション膜110を成膜し、陽極109の表面
が露呈する開口を設ける。さらに、陽極109の露呈面
及びパッシベーション膜110上に、絶縁性の隔壁絶縁
膜111を設け、矢印Mで示した部位、すなわち、陽極
109の表面を露呈させる第1の開口を設けると共に、
矢印Sで示した部位、すなわち、表示画素の縁端の内側
に第2の開口を形成する。この隔壁絶縁膜111の開口
は陽極109の端部を覆うように設けられ、後述する陰
極との短絡を防止する。また、矢印Sで示した部位の開
口は、図4(b)に示したように、隔壁絶縁膜111の
陽極109側の壁面111Fが基板に対して鋭角に、例
えば、θ=45°に傾斜させている。Next, on the interlayer insulating film 106 including the surface of the anode 109, for example, a passivation film 110 made of SiNx having a thickness of 450 nm is formed, and an opening for exposing the surface of the anode 109 is provided. Further, an insulating partition wall insulating film 111 is provided on the exposed surface of the anode 109 and the passivation film 110, and a portion indicated by an arrow M, that is, a first opening for exposing the surface of the anode 109 is provided.
A second opening is formed at the position indicated by the arrow S, that is, inside the edge of the display pixel. The opening of the partition insulating film 111 is provided so as to cover the end of the anode 109, and prevents a short circuit with a cathode described later. In addition, as shown in FIG. 4B, the opening of the portion indicated by the arrow S is such that the wall surface 111F of the partition insulating film 111 on the anode 109 side is inclined at an acute angle to the substrate, for example, at θ = 45 °. Let me.
【0026】次に、陽極109表面を含む隔壁絶縁膜1
11上に、正孔輸送層、正孔注入層等を膜厚110nmに
積層してなる陽極バッファ層112を堆積した後、膜厚
30nmの有機発光層113を積層し、さらに、電子注入
層等よりなる膜厚30nmの陰極バッファ層114を堆積
した後、全面に陰極115を形成する。Next, the partition insulating film 1 including the surface of the anode 109
An anode buffer layer 112 formed by stacking a hole transport layer, a hole injection layer, and the like to a thickness of 110 nm is deposited on the substrate 11, an organic light emitting layer 113 having a thickness of 30 nm is stacked, and an electron injection layer, etc. After depositing a cathode buffer layer 114 having a thickness of 30 nm, a cathode 115 is formed on the entire surface.
【0027】この結果、有機発光層113から放射され
る光成分P1,P2,P3のうち、光成分P1は直接表示面
方向に進み、光成分P2,P3は隔壁絶縁膜111を通し
て横方向に進み、矢印Sで示した隔壁絶縁膜111の開
口の陽極109側の壁面における陰極115によって表
示面方向に屈折せしめられ、表示パネルの発光強度を高
めることになる。As a result, of the light components P 1, P 2, and P 3 radiated from the organic light emitting layer 113, the light component P 1 goes directly to the display surface, and the light components P 2 and P 3 go laterally through the partition insulating film 111. Then, the light is refracted in the display surface direction by the cathode 115 on the wall surface on the anode 109 side of the opening of the partition insulating film 111 indicated by the arrow S, thereby increasing the light emission intensity of the display panel.
【0028】なお、表示画素間には図示したように配線
108が配置されることがあり、この構造では配線10
8よりも内側に光成分P2,P3を屈折させる傾斜面を設
けることが望ましい。Incidentally, the wiring 108 may be arranged between the display pixels as shown in FIG.
It is desirable to provide an inclined surface for refracting the light components P2 and P3 inside the portion 8.
【0029】また、本実施形態では光成分P2,P3を屈
折させる傾斜面を基板面に対して45度としたが発光強
度を高めるという観点では90°より小さい鋭角にする
だけでもかなりの効果が得られる。Further, in the present embodiment, the inclined surface for refracting the light components P2 and P3 is set at 45 degrees with respect to the substrate surface. can get.
【0030】ところで、上記の実施形態中、図4(a)
又は図4(b)の矢印Sに示した部分に着目すると、光
成分P3は隔壁絶縁膜111を抜けてから、陽極バッフ
ァ層112を介して陰極115で反射され、表示面方向
に向かう。この構成によれば陽極バッファ層112の吸
収係数(吸光係数)に従って光成分P3は減衰されて表
示面方向に進むため、表示パネルの発光強度を高めると
いう観点では効率が低下する。これを防ぐためには、矢
印Sで示す隔壁絶縁膜111の開口の傾斜した壁面11
1Fに陰極115を直接被着すれば、光成分P3に対す
る陽極バッファ層112による2回に亘る減衰作用を回
避することができる。By the way, in the above embodiment, FIG.
Alternatively, focusing on the portion indicated by the arrow S in FIG. 4B, the light component P3 passes through the partition insulating film 111, is reflected by the cathode 115 via the anode buffer layer 112, and travels toward the display surface. According to this configuration, the light component P3 is attenuated in accordance with the absorption coefficient (extinction coefficient) of the anode buffer layer 112 and proceeds in the direction of the display surface, so that the efficiency decreases from the viewpoint of increasing the emission intensity of the display panel. In order to prevent this, the inclined wall surface 11 of the opening of the partition insulating film 111 indicated by the arrow S
If the cathode 115 is directly applied to the first floor, it is possible to prevent the anode buffer layer 112 from attenuating the light component P3 twice.
【0031】図6はこの点に着目してなされた本発明に
係る有機自己発光型表示装置の第2の実施形態の表示画
素の縦断面図である。図6中、図4と同一の要素には同
一の符号を付してその説明を省略する。これは第1の実
施形態と同様に、隔壁絶縁膜111に開口を形成する際
に、矢印Sで示した部位にも陽極109側の壁面111
Fが例えば略45度をなすような第2の開口を形成す
る。ここに示した表示画素11Aは、前述の第1の開
口、つまり、陽極109上の隔壁絶縁膜で囲まれる領域
に、陽極バッファ層112、有機発光層113、陰極バ
ッファ層114が形成され、これらを覆う全面に陰極1
15が形成されている。従って、矢印Sで示した部位で
略45度に傾斜する隔壁絶縁膜111の壁面111Fに
は陰極115が直接被着される。FIG. 6 is a vertical sectional view of a display pixel of a second embodiment of the organic self-luminous display device according to the present invention, which is made by paying attention to this point. 6, the same elements as those in FIG. 4 are denoted by the same reference numerals, and description thereof will be omitted. This is because, similarly to the first embodiment, when an opening is formed in the partition insulating film 111, the wall surface 111 on the side of the anode 109 is also formed at the position indicated by the arrow S.
A second opening is formed such that F forms an angle of about 45 degrees, for example. In the display pixel 11A shown here, the anode buffer layer 112, the organic light emitting layer 113, and the cathode buffer layer 114 are formed in the above-described first opening, that is, in a region surrounded by the partition insulating film on the anode 109. Cathode 1 over the entire surface
15 are formed. Accordingly, the cathode 115 is directly attached to the wall surface 111F of the partition insulating film 111 which is inclined at approximately 45 degrees at the position indicated by the arrow S.
【0032】このように、構成することによって、有機
発光層113から横方向に進む光成分P3(及びP2)は
隔壁絶縁膜111の傾斜面で陰極115により直接反射
されるため、前述した陽極バッファ層112によって減
衰されることがなくなり、図2に示した実施形態よりも
表示パネルの発光強度を高めることができる。With this configuration, the light component P3 (and P2) traveling laterally from the organic light emitting layer 113 is directly reflected by the cathode 115 on the inclined surface of the partition insulating film 111. The light is not attenuated by the layer 112, and the light emission intensity of the display panel can be increased as compared with the embodiment shown in FIG.
【0033】以上のように、有機自己発光型表示装置の
隔壁絶縁膜の隣接表示画素間に開口を設け、この隔壁絶
縁膜の開口の壁面を光り出射面に対して鋭角となるよう
に形成するので、表示画素内で、光出射面と平行な方向
に漏れていた光を効率よく取り出すことが可能となる。As described above, an opening is provided between adjacent display pixels of the partition insulating film of the organic self-luminous display device, and the wall surface of the opening of the partition insulating film is formed to be at an acute angle with respect to the light emitting surface. Therefore, it is possible to efficiently extract the light leaked in the direction parallel to the light emitting surface in the display pixel.
【0034】つまり、有機発光層を介して光出射面と対
向する側の電極を高反射率の部材で形成し、この電極が
個々の表示画素の端部において光出射面と鋭角を成すよ
うに形成されるので、有機発光層からの発光光を効率よ
く光出射面側に取り出すことができる。That is, the electrode on the side facing the light emitting surface via the organic light emitting layer is formed of a member having high reflectance, and this electrode forms an acute angle with the light emitting surface at the end of each display pixel. Since it is formed, light emitted from the organic light emitting layer can be efficiently extracted to the light emitting surface side.
【0035】また、この開口を個々の表示画素の縁端内
側全面に亘って形成すれば、隣接画素間への光漏れを防
止することが可能となり、クロストークを抑え、コント
ラストを向上させ、また、カラー表示の場合には隣接画
素間の混色を防止することができる。If this opening is formed over the entire inner surface of the edge of each display pixel, it is possible to prevent light leakage between adjacent pixels, suppress crosstalk, improve contrast, and In the case of color display, color mixing between adjacent pixels can be prevented.
【0036】全体構成を把握するために示した図1は、
図4又は図6に示した表示画素を3個並設して画素1を
構成し、さらに、これらの画素1をマトリクス状に多数
個配置して表示領域120とした有機自己発光パネルア
レイ100の平面図である。この場合、表示領域120
に対してガラス基板101は縦横両方とも寸法が大きく
形成され、特に図面の右側及び下側に大きくはみ出さ
せ、このうち、右側にX方向駆動回路121が搭載され
ると共に、各画素から導出される配線122に接続さ
れ、下側にY方向駆動回路123が搭載されると共に、
各画素から導出される配線124に接続される。FIG. 1 shown in order to grasp the overall configuration,
The pixel 1 is formed by arranging three display pixels shown in FIG. 4 or FIG. 6 side by side, and a plurality of these pixels 1 are arranged in a matrix to form a display region 120 of the organic self-luminous panel array 100. It is a top view. In this case, the display area 120
On the other hand, the glass substrate 101 is formed to have a large size in both the vertical and horizontal directions, and particularly protrudes to the right and lower sides of the drawing, of which the X-direction drive circuit 121 is mounted on the right side and is derived from each pixel. Connected to the wiring 122, the Y-direction drive circuit 123 is mounted on the lower side,
It is connected to a wiring 124 derived from each pixel.
【0037】さらに、図2は、図1に示した有機自己発
光パネルアレイ100を構成要素として組立てられた有
機自己発光パネルの縦断面図であり、有機自己発光パネ
ルアレイ100の表示領域120、X方向駆動回路12
1及びY方向駆動回路123を取り囲むように、その縁
端部に封止部材131が設けられている。この封止部材
131上に、その内面に、例えば、ゼオライトやBaO
等の乾燥剤132を塗着してなるガラス基板133が装
着され、さらに、内部に乾燥窒素が充填される。これに
よって図面の下方が表示面となる有機自己発光パネル2
00が構成される。そして、この有機自己発光パネル2
00によって有機自己発光型表示装置を構成することが
できる。FIG. 2 is a longitudinal sectional view of an organic self-luminous panel assembled using the organic self-luminous panel array 100 shown in FIG. 1 as a constituent element. Direction drive circuit 12
A sealing member 131 is provided at the edge of the Y-direction drive circuit 123 so as to surround the Y-direction drive circuit 123. On the sealing member 131, on its inner surface, for example, zeolite or BaO
A glass substrate 133 coated with a desiccant 132 such as is mounted, and the inside is further filled with dry nitrogen. As a result, the organic self-luminous panel 2 whose display surface is at the bottom of the drawing
00 is configured. And this organic self-luminous panel 2
00 makes it possible to configure an organic self-luminous display device.
【0038】上記第1および第2の実施形態における有
機発光層は例えばAlq3等の低分子系の有機発光材料を用
いて蒸着等により構成される。The organic light-emitting layer in the first and second embodiments are constituted by vapor deposition or the like using an organic luminescent material of low molecular weight, such as Alq 3, for example.
【0039】次に第3の実施形態について説明する。図
9は、本発明の第3の実施形態に係る有機自己発光表示
装置のアレイ基板の概略断面図である。本実施形態にお
いては、有機発光層113は例えばポリフルオレン等の
高分子系の有機発光材料を用いてインクジェット法によ
りR,G,Bに対応して形成される。つまり、高分子系
の有機発光材料を順次吐出し、第1電極である陽極10
9上の隔壁絶縁膜111の開口に対応する位置に膜厚3
0nmの陽極バッファ層112を介して有機発光層113
が選択的に形成される。本実施形態においては、有機発
光層113は例えば膜厚80nmに形成される。このよう
に高分子系の有機発光材料を用いて有機発光層113を
形成することにより、アレイ基板の基板サイズの設計変
更に対して容易に対応することができる。また、必要な
箇所にのみ選択的に発光材料を吐出することができるの
で、材料利用効率が改善される。Next, a third embodiment will be described. FIG. 9 is a schematic sectional view of an array substrate of an organic self-luminous display according to a third embodiment of the present invention. In the present embodiment, the organic light emitting layer 113 is formed corresponding to R, G, and B by an ink-jet method using a polymer organic light emitting material such as polyfluorene. That is, the polymer organic light emitting material is sequentially discharged, and the anode 10 serving as the first electrode is discharged.
9 at a position corresponding to the opening of the partition insulating film 111.
Organic light-emitting layer 113 via 0 nm anode buffer layer 112
Are selectively formed. In the present embodiment, the organic light emitting layer 113 is formed to a thickness of, for example, 80 nm. By forming the organic light emitting layer 113 using a high molecular weight organic light emitting material in this manner, it is possible to easily cope with a design change of the substrate size of the array substrate. Further, since the light emitting material can be selectively discharged only to a necessary portion, the material use efficiency is improved.
【0040】次に第4の実施形態について説明する。図
9は、本願発明の第4の実施形態に係る有機自己発光表
示装置のアレイ基板の概略断面図である。本実施形態
は、駆動TFT(駆動素子)45と接続する第1電極、こ
こでは陽極109が絶縁膜116を介して駆動TFT45
のドレイン電極107bと接続するものである。このよ
うに信号線41、TFT44,45上に絶縁膜116を介
して第1電極を配置するので、第1乃至3の実施形態の
ように信号線41と第1電極とが同一平面上に配置され
る場合と比し、第1電極の配置位置の自由度を向上させ
ることができ、また発光面積を増大させることも可能と
なる。Next, a fourth embodiment will be described. FIG. 9 is a schematic sectional view of an array substrate of an organic self-luminous display according to a fourth embodiment of the present invention. In the present embodiment, the first electrode connected to the driving TFT (driving element) 45, here, the anode 109 is connected to the driving TFT 45 via the insulating film 116.
Connected to the drain electrode 107b. Since the first electrode is disposed on the signal line 41 and the TFTs 44 and 45 with the insulating film 116 interposed therebetween, the signal line 41 and the first electrode are disposed on the same plane as in the first to third embodiments. As compared with the case where the first electrode is provided, the degree of freedom of the arrangement position of the first electrode can be improved, and the light emitting area can be increased.
【0041】また、各表示画素1は上記構造に限定され
ず、例えば図10に示すようにX方向駆動回路121か
ら供給される走査信号に基づき、Y方向駆動回路123
から供給される映像信号が書き込まれる表示画素を選択
する画素スイッチ44と、画素スイッチ44を介して信
号線41から書き込まれた映像信号を1水平走査期間保
持する第1コンデンサ47と、映像信号に基づく駆動電
流を表示素子46に供給する駆動素子45と、リセット
回路48とから構成されてもよい。Further, each display pixel 1 is not limited to the above-described structure. For example, as shown in FIG. 10, a Y-direction driving circuit 123 is provided based on a scanning signal supplied from an X-direction driving circuit 121.
A pixel switch 44 for selecting a display pixel to which a video signal supplied from a pixel is written, a first capacitor 47 for holding the video signal written from the signal line 41 via the pixel switch 44 for one horizontal scanning period, And a reset circuit 48 for supplying a driving current based on the driving current to the display element 46.
【0042】ここで画素スイッチ44は例えばn型TFT
により構成され、駆動素子45はp型TFTにより構成さ
れる。また、リセット回路48は、画素スイッチのドレ
イン-駆動素子のゲート間に配置される第2コンデンサ4
8aと、駆動素子45のゲート-ドレイン間に配置される
第1スイッチ48bと、駆動素子45のドレインと表示
素子46の第1電極間に配置される第2スイッチ48cと
から構成される。Here, the pixel switch 44 is, for example, an n-type TFT.
, And the driving element 45 is formed of a p-type TFT. Further, the reset circuit 48 includes a second capacitor 4 disposed between the drain of the pixel switch and the gate of the driving element.
8a, a first switch 48b disposed between the gate and the drain of the driving element 45, and a second switch 48c disposed between the drain of the driving element 45 and the first electrode of the display element 46.
【0043】尚、ここでは表示素子とは第1電極、第1電
極に対向配置される第2電極、第1電極および第2電極間
に保持される自己発光部で構成される積層体をいう。
尚、自己発光部(有機薄膜層)は、各色共通に形成され
る陽極バッファ層、陰極バッファ層、及び各色毎に形成
される発光層の3層積層で構成されてもよく、機能的に
複合された2層または単層で構成されてもよい。Here, the display element refers to a laminated body composed of a first electrode, a second electrode disposed to face the first electrode, and a self-luminous portion held between the first electrode and the second electrode. .
The self-light emitting portion (organic thin film layer) may be composed of a three-layer stack of an anode buffer layer, a cathode buffer layer, and a light emitting layer formed for each color, which are formed in common for each color. It may be composed of two layers or a single layer.
【0044】また、上述の実施形態においては、陽極を
透明電極として光出射面側に、陰極を光反射電極として
非光出射面側に配置したが、陰極を光透過性を有する導
電膜で形成して光出射面側に、陽極を導電膜と金属層と
の積層構造にするなどして非光出射面側に配置してもよ
い。In the above-described embodiment, the anode is disposed on the light emitting surface side as a transparent electrode, and the cathode is disposed on the non-light emitting surface as a light reflecting electrode. However, the cathode is formed of a light-transmitting conductive film. Then, the anode may be disposed on the non-light-emitting surface side by forming the anode into a laminated structure of a conductive film and a metal layer on the light-emitting surface side.
【0045】また、上述の実施形態においては、TFT等
の配置されたアレイ基板を介して外部に光を取り出す方
式の自己発光表示装置について説明したが、第2電極を
光透過性を有する導電膜で形成し、第2電極を介して外
部に光を取り出すものであってもよく、いずれの場合も
一表示画素から隣接する他の表示画素に向かう光を光出
射面側に取り出す光出射面を一表示画素と他の表示画素
との間に設けることが重要である。また、上述の実施形
態においては、隔壁絶縁膜の開口は各表示画素の全周に
わたって形成される場合について説明したが、これに限
定されず表示画素の列方向に沿ってストライプ状に形成
してもよい。特にカラー表示の場合には、R,G,Bの各色
がストライプ状に形成されていれば隣接画素間の混色を
抑制することができる。In the above-described embodiment, the self-luminous display device of the type in which light is extracted to the outside through an array substrate on which a TFT or the like is arranged has been described. May be one that extracts light to the outside through the second electrode, and in any case, a light emission surface that extracts light heading from one display pixel to another adjacent display pixel to the light emission surface side. It is important to provide between one display pixel and another display pixel. Further, in the above-described embodiment, the case where the opening of the partition insulating film is formed over the entire circumference of each display pixel has been described. However, the present invention is not limited to this. Is also good. In particular, in the case of color display, color mixture between adjacent pixels can be suppressed if the R, G, and B colors are formed in stripes.
【0046】また、自己発光表示装置として有機自己発
光装置のうちエレクトロルミネセンス表示装置を例にと
り説明したがこれに限定されない。The self-luminous display has been described by taking an electroluminescent display among organic self-luminous devices as an example, but is not limited to this.
【0047】[0047]
【発明の効果】以上の説明によって明らかなように、本
発明によれば、光出射面への光の取り出し効率を向上さ
せることのできる自己発光型表示装置を提供することが
できる。また、本発明によれば隣接画素間でのクロスト
ークが抑えられた自己発光型表示装置を提供することが
できる。As is apparent from the above description, according to the present invention, it is possible to provide a self-luminous display device capable of improving the efficiency of extracting light to the light emitting surface. Further, according to the present invention, it is possible to provide a self-luminous display device in which crosstalk between adjacent pixels is suppressed.
【図1】本発明に係る有機自己発光型表示装置の有機自
己発光パネルアレイの構成を示す平面図。FIG. 1 is a plan view showing a configuration of an organic self-luminous panel array of an organic self-luminous display device according to the present invention.
【図2】図1に示した有機自己発光パネルアレイの構成
を示す縦断面図。FIG. 2 is a longitudinal sectional view showing the configuration of the organic self-luminous panel array shown in FIG.
【図3】一般的な有機自己発光型表示装置の一つの画素
の平面図及び本発明の概要を説明するための表示画素の
平面図。FIG. 3 is a plan view of one pixel of a general organic self-luminous display device and a plan view of a display pixel for explaining an outline of the present invention.
【図4】本発明に係る有機自己発光型表示装置の第1の
実施形態を説明するために、表示画素の構成を示す縦断
面図及びその特徴部の詳細な構成を示す縦断面図。FIG. 4 is a vertical cross-sectional view showing a configuration of a display pixel and a vertical cross-sectional view showing a detailed configuration of a characteristic portion thereof, for explaining a first embodiment of an organic self-luminous display device according to the present invention.
【図5】本発明に係る有機自己発光型表示装置のパネル
アレイの構成要素を平面的に配置した回路図。FIG. 5 is a circuit diagram in which components of a panel array of the organic self-luminous display device according to the present invention are arranged in a plane.
【図6】本発明に係る有機自己発光型表示装置の第2の
実施形態を説明するために、表示画素の構成を示す縦断
面図。FIG. 6 is a longitudinal sectional view showing a configuration of a display pixel for explaining a second embodiment of the organic self-luminous display device according to the present invention.
【図7】従来の有機自己発光型表示装置の構成を説明す
るための表示画素の縦断面図。FIG. 7 is a longitudinal sectional view of a display pixel for explaining a configuration of a conventional organic self-luminous display device.
【図8】本発明に係る有機自己発光型表示装置の第3の
実施形態を説明するための表示画素の縦断面図。FIG. 8 is a vertical sectional view of a display pixel for explaining a third embodiment of the organic self-luminous display device according to the present invention.
【図9】本発明に係る有機自己発光型表示装置の第4の
実施形態を説明するための表示画素の縦断面図。FIG. 9 is a longitudinal sectional view of a display pixel for explaining a fourth embodiment of the organic self-luminous display device according to the present invention.
【図10】本発明に係る有機自己発光型表示装置のパネ
ルアレイの構成要素を平面的に配置した回路図。FIG. 10 is a circuit diagram in which components of a panel array of an organic self-luminous display device according to the present invention are arranged in a plane.
1 画素 11,11A,12,13 表示画素 21 陽極 31 開口 100 有機自己発光パネルアレイ 101 ガラス基板 102 アンダーコート層 103 多結晶シリコン層 104 ゲート絶縁膜 106 層間絶縁膜 107 ソース・ドレイン電極 108 配線 109 陽極 110 パッシベーション膜 111 隔壁絶縁膜 111F 壁面 112 陽極バッファ層 113 有機発光層 114 陰極バッファ層 115 陰極 121 X方向駆動回路 123 Y方向駆動回路 131 封止部材 133 ガラス基板 200 有機自己発光パネル 1 pixel 11, 11A, 12, 13 display pixel 21 anode 31 opening 100 organic self-luminous panel array 101 glass substrate 102 undercoat layer 103 polycrystalline silicon layer 104 gate insulating film 106 interlayer insulating film 107 source / drain electrode 108 wiring 109 anode Reference Signs List 110 passivation film 111 partition insulating film 111F wall surface 112 anode buffer layer 113 organic light emitting layer 114 cathode buffer layer 115 cathode 121 X-direction drive circuit 123 Y-direction drive circuit 131 sealing member 133 glass substrate 200 organic self-luminous panel
Claims (5)
第1電極に対向配置される第2電極と、前記第1および第
2電極間に保持され、少なくとも発光層を含む自己発光
部を備えた複数の表示画素をマトリクス状に配置し、前
記第1および第2電極のいずれか一方が光出射面内に配置
される自己発光表示装置において、一表示画素から隣接
する他の表示画素に向かう光を前記光出射面側に取り出
す光反射面を前記一表示画素と前記他の表示画素間に設
けたことを特徴とする自己発光型表示装置。A plurality of first electrodes formed in an island shape; a second electrode disposed to face the first electrode;
A plurality of display pixels held between two electrodes and including a self-light-emitting portion including at least a light-emitting layer are arranged in a matrix, and one of the first and second electrodes is arranged in a light-emitting surface. In the light-emitting display device, a light reflecting surface for extracting light from one display pixel to another adjacent display pixel to the light emission surface side is provided between the one display pixel and the other display pixel. Light-emitting display device.
をそれぞれ電気的に絶縁する隔壁をさらに備え、前記第
1又は第2電極のうち、前記発光層を介して前記光出射
面と対向配置される側の電極の形成面が、個々の前記表
示画素の端辺に形成された前記隔壁の開口の傾斜角によ
り、光出射面に対して鋭角をなす前記光反射面を形成す
ることを特徴とする請求項1記載の自己発光型表示装
置。2. The self-luminous display device further comprises a partition wall for electrically insulating the first electrode, and the light emitting surface of the first or second electrode via the light emitting layer. The formation surface of the electrode on the side arranged oppositely forms the light reflection surface that forms an acute angle with respect to the light emission surface due to the inclination angle of the opening of the partition wall formed on the edge of each of the display pixels. The self-luminous display device according to claim 1, wherein:
って連続して形成されることを特徴とする請求項2記載
の自己発光型表示装置。3. The self-luminous display device according to claim 2, wherein said second electrode is formed continuously over a plurality of said display pixels.
極の形成面が、個々の前記表示画素の端辺全周におい
て、光出射面に対して鋭角をなすよう形成されることを
特徴とする請求項2記載の自己発光型表示装置。4. The method according to claim 1, wherein a surface of the electrode on a side opposed to the light emitting surface is formed so as to form an acute angle with respect to the light emitting surface over the entire periphery of each of the display pixels. 3. The self-luminous display device according to claim 2, wherein:
り電気的に絶縁されており、前記隔壁を覆う全面に前記
第2電極が形成され、前記表示画素端辺の前記隔壁に形
成された開口の傾斜角により、前記第2電極が個々の前
記表示画素の端辺において、光出射面に対して、鋭角を
なすよう形成されることを特徴とする請求項2記載の自
己発光型表示装置。5. The plurality of first electrodes are each electrically insulated by a partition, and the second electrode is formed on the entire surface covering the partition, and is formed on the partition on an edge of the display pixel. 3. The self-luminous display device according to claim 2, wherein the second electrode is formed at an edge of each of the display pixels so as to form an acute angle with respect to the light emitting surface due to an inclination angle of the opening. .
Priority Applications (1)
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JP2001342820A JP3943900B2 (en) | 2000-11-09 | 2001-11-08 | Self-luminous display device |
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JP2000341843 | 2000-11-09 | ||
JP2000-341843 | 2000-11-09 | ||
JP2001342820A JP3943900B2 (en) | 2000-11-09 | 2001-11-08 | Self-luminous display device |
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JP3943900B2 JP3943900B2 (en) | 2007-07-11 |
Family
ID=26603652
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