JP2002131163A - Package for pressure detection device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a pressure detection device small in size, highly sensible and capable of accurately detecting an external pressure without the variation. SOLUTION: In a package for the pressure detection device, a semiconductor element 3 is mounted on one side of a main plane of an insulating substrate 1, and a first electrode 7 for generating the electrostatic capacity and a first metallized bounding layer 8 that surrounds the first electrode 7 are disposed on the other side of the main plane. A second electrode 9 opposing to the first electrode 7 and a second metallized bonding layer 10 electrically connected to the second electrode 9 through a connecting metallized layer 11 that surrounds the second electrode 9 and is disposed in the section on outside plane of an insulating plate 2, are disposed on inside plane of the insulating plate 2. The first metallized bonding layer 8 and the second metallized bounding layer 10 are brazed to each other, thereby the insulating plate 2 is bonded on another side of the main plane of the insulating substrate 1 so flexible that a sealed space is formed between the insulating substrate 1 and the insulating plate 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure detecting device package used for a pressure detecting device for detecting pressure.

[0002]

2. Description of the Related Art Conventionally, a capacitance type pressure detecting device has been known as a pressure detecting device for detecting pressure. As shown in a sectional view of FIG. 3, for example, a capacitance type pressure sensing device 22 and a package 28 are provided on a wiring board 21 made of a ceramic material or a resin material.
And a semiconductor element 29 for arithmetic operation accommodated in the computer. The pressure-sensitive element 22 is made of, for example, an electrically insulating material such as a ceramic material.
An insulating substrate 24 having a concave portion with
An insulating plate 26 which is joined in a flexible state on the upper surface of the insulating substrate 24 so as to form a sealed space between the insulating substrate 24 and the other electrode 25 for forming a capacitance on the lower surface; Each of the electrodes 23 and 25 for forming a capacitance includes an external lead terminal 27 for electrically connecting the electrode to the outside, and each of the capacitances is formed by bending the insulating plate 26 in response to an external pressure. The capacitance formed between the forming electrodes 23 and 25 changes. An external pressure can be detected by subjecting the change in capacitance to arithmetic processing by the arithmetic semiconductor element 29.

[0003]

However, according to the conventional pressure detecting device, the pressure-sensitive element 22 and the semiconductor element 29 are not provided.
Are individually mounted on the wiring board 21, which increases the size of the pressure detecting device and the pressure detecting electrode.
The wiring between 23 and 25 and the semiconductor element 29 becomes longer,
There is a problem that the sensitivity is low because an unnecessary capacitance is formed between the long wires.

Accordingly, the applicant of the present application has previously filed Japanese Patent Application No. 2000-178.
No. 618, an insulating base having a mounting portion on which a semiconductor element is mounted on one main surface, and a plurality of wirings disposed on and inside the insulating base and electrically connected to respective electrodes of the semiconductor element. A conductor, a first electrode for forming a capacitance, which is attached to a central portion of the other main surface of the insulating base and is electrically connected to one of the wiring conductors, and on the other main surface of the insulating base, An insulating plate joined in a flexible state so as to form a sealed space with the central portion of the main surface; and a wiring conductor attached to the inner main surface of the insulating plate so as to face the first electrode, and And a package for a pressure detection device comprising a second electrode for forming a capacitance which is electrically connected to the other one. According to this pressure detecting device package, a first electrode for forming a capacitance is provided on the other main surface of the insulating base having a mounting portion on which a semiconductor element is mounted on one main surface, and the first electrode is provided on the first electrode. Since the insulating plate having the opposing second electrode for capacitance formation on the inner surface is joined in a flexible state so as to form a sealed space with the other main surface of the insulating base, The pressure-sensitive element is formed integrally with the package containing the semiconductor element, and as a result, the pressure detection device can be reduced in size, and the wiring for connecting the electrode for pressure detection and the semiconductor element is shortened. Unnecessary capacitance generated between the wirings can be reduced. In the package for a pressure detecting device proposed in Japanese Patent Application No. 2000-178618, a frame made of ceramics or metal is provided on the outer peripheral portion of the other main surface of the insulating base so as to surround the first electrode. The insulating plate was joined to the insulating base by brazing the outer peripheral portion of the second electrode on the frame via a brazing material such as silver-copper brazing material.

However, according to the pressure sensing device package proposed in Japanese Patent Application No. 2000-178618, the outer peripheral portion of the second electrode of the insulating plate is formed on a frame made of ceramics or metal by a brazing material such as silver-copper brazing material. When brazing through, a large amount of the brazing material easily flows out to the center of the second electrode, and is formed between the first electrode and the second electrode by the brazing material that has flowed in such a large amount. However, there is a problem that it is difficult to accurately detect an external pressure.

The present invention has been completed in view of the above-mentioned problems, and has as its object to provide a pressure detecting device which is small in size, has high sensitivity, and is capable of accurately detecting external pressure without variation. Is to provide.

[0007]

A package for a pressure detecting device according to the present invention is provided on an insulating base having a mounting portion on one side of which a semiconductor element is mounted, and on the surface and inside of the insulating base. A plurality of wiring conductors to which each electrode of the semiconductor element is electrically connected; and a capacitance forming electrode attached to the center of the other main surface of the insulating base and electrically connected to one of the wiring conductors. And a frame-shaped first bonding metallization layer which is attached to the outer periphery of the other main surface so as to surround the first electrode and is electrically connected to another one of the wiring conductors And an insulating plate joined to the insulating base in a flexible state so as to form a sealed space between the central portion and the insulating plate. The insulating plate is attached to the inner main surface of the insulating plate so as to face the first electrode. A second electrode;
A frame-shaped second bonding metallization layer attached to the inner main surface so as to surround the second electrode and bonded to the first bonding metallization layer via a brazing material; A connection metallization conductor that is attached to the surface and electrically connects the second electrode to the second bonding metallization layer.

According to the pressure detecting device package of the present invention, the first electrode for forming the capacitance is formed at the center of the other main surface of the insulating base having the mounting portion on which the semiconductor element is mounted on one main surface. And an insulating plate having a second electrode for forming a capacitance opposed to the first electrode is bonded in a flexible state so as to form a closed space between the insulating plate and the insulating base. The pressure-sensitive element is formed integrally with the package containing the semiconductor element. As a result, the pressure detecting device can be reduced in size and the wiring for connecting the pressure detecting electrode and the semiconductor element can be shortened. Unnecessary capacitance generated between the wirings can be reduced. Further, a frame-shaped second bonding metallization layer brazed to the first bonding metallization layer is provided on the inner surface of the insulating plate so as to surround the second electrode, and the second bonding metallization layer and the second electrode Are electrically connected to each other through the metallization conductor for connection provided inside and on the surface of the insulating plate, so that the brazing material for bonding the first metallization layer for bonding and the second metallization layer for bonding is used for the second electrode. There is no outflow, and as a result, the capacitance formed between the first electrode and the second electrode does not vary due to the outflow of the brazing material.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a pressure detection device package according to the present invention.
1 is an insulating base, 2 is an insulating plate, and 3 is a semiconductor element.

The insulating substrate 1 is made of a ceramic material such as a sintered body of aluminum oxide, a sintered body of aluminum nitride, a sintered body of mullite, a sintered body of silicon carbide, a sintered body of silicon nitride, and glass-ceramics. For example, in the case of an aluminum oxide sintered body, an organic binder suitable for ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc.
A solvent, a plasticizer, and a dispersant are added and mixed to form a slurry, and this is formed into a sheet by employing a conventionally known doctor blade method to obtain a plurality of ceramic green sheets. The green ceramic sheet is subjected to appropriate punching, laminating, and cutting to obtain a green ceramic molded body for the insulating substrate 1 and is fired at a temperature of about 1600 ° C. to produce the green ceramic molded body.

The insulating substrate 1 has a concave portion 1a for accommodating the semiconductor element 3 in the center of the lower surface thereof, and thereby functions as a container for accommodating the semiconductor element 3. The central portion of the bottom surface of the concave portion 1a is a mounting portion 1b on which the semiconductor element 3 is mounted. The semiconductor element 3 is mounted on the mounting portion 1b and a resin sealing such as an epoxy resin is formed in the concave portion 1a. The semiconductor element 3 is sealed by filling the material 4. In this example, the semiconductor element 3 is sealed by filling a resin sealing material 4 into the concave portion 1a. However, the semiconductor element 3 is provided with a lid made of metal or ceramic on the lower surface of the insulating base 1 in the concave portion 1a. It may be sealed by joining so as to close.

A plurality of metallized wiring conductors 5 connected to the respective electrodes of the semiconductor element 3 are led out from the mounting portion 1b, and the metallized wiring conductor 5 and the respective electrodes of the semiconductor element 3 are connected to the solder bumps 6 and the like. By bonding via a conductive bonding member made of a conductive material, each electrode of the semiconductor element 3 is electrically connected to each metallized wiring conductor 5, and the semiconductor element 3 is fixed to the mounting portion 1b. In this example, the electrodes of the semiconductor element 3 and the metallized wiring conductors 5 are connected via the solder bumps 6, but the electrodes of the semiconductor element 3 and the metallized wiring conductors 5 are connected to another type of electric wire such as a bonding wire. May be connected by a dynamic connection means.

The metallized wiring conductor 5 functions as a conductive path for electrically connecting each electrode of the semiconductor element 3 to an external electric circuit and a first electrode 7 and a second electrode 9, which will be described later.
A part thereof is led out to the lower surface of the outer periphery of the insulating base 1, and another part is electrically connected to the first electrode 7 and the second electrode 9. Then, each electrode of the semiconductor element 3 is electrically connected to these metallized wiring conductors 5 via a conductive bonding material, and the semiconductor element 3 is sealed with a resin sealing material 4. The semiconductor element 3 housed therein is electrically connected to the external electric circuit by joining the portion led out to the lower surface of the outer periphery of the insulating base 1 to the wiring conductor of the external electric circuit board via a conductive bonding material such as solder. The Rukoto.

The metallized wiring conductor 5 is made of metallized metal powder such as tungsten, molybdenum, copper, silver, etc., and is mixed with a metal powder such as tungsten by adding an appropriate organic binder, solvent, plasticizer, dispersant and the like. The metallized paste obtained as described above is applied to a ceramic green sheet for the insulating substrate 1 in a predetermined pattern by employing a conventionally known screen printing method, and is fired together with the green ceramic molded body for the insulating substrate 1 for insulation. A predetermined pattern is formed inside and on the surface of the base 1. In addition, in order to prevent the metallized wiring conductor 5 from being oxidized and corroded and to make the metallized wiring conductor 5 and a conductive bonding material such as solder good, the exposed surface of the metallized wiring conductor 5 is usually formed on the exposed surface. In this case, a nickel plating layer having a thickness of about 1 to 10 μm and a gold plating layer having a thickness of about 0.1 to 3 μm are sequentially applied.

A frame 1c made of the same material as the insulating substrate 1 and having a height of about 0.01 to 5 mm is provided on the outer peripheral portion of the upper surface of the insulating substrate 1, so that the bottom surface is substantially flat at the center of the upper surface. A recess 1d is formed. This recess 1d
As will be described later, this is for forming a closed space between the insulating plate 2 and the first electrode 7 for forming a capacitance is attached to the bottom surface of the concave portion 1d.

The first electrode 7 is for forming a capacitance for a pressure-sensitive element together with a second electrode 9 to be described later, and is formed, for example, in a substantially circular pattern. The first electrode 7 is provided with one of the metallized wiring conductors 5.
When the electrode of the semiconductor element 3 is connected to the metallized wiring conductor 5a via a conductive bonding material such as a solder bump 6, the electrode of the semiconductor element 3 and the first electrode 7 are electrically connected. It is to be connected.

The first electrode 7 is made of a metal powder of tungsten, molybdenum, copper, silver, or the like.
A metallized paste obtained by adding a suitable organic binder, a solvent, a plasticizer, and a dispersant to a metal powder such as tungsten is mixed with an insulating substrate 1 by using a conventionally known screen printing method.
A ceramic green sheet for printing is applied and baked together with a green ceramic molded body for the insulating substrate 1 to form a predetermined pattern on the bottom surface of the concave portion 1d of the insulating substrate 1. The exposed surface of the first electrode 7 is usually coated with a nickel plating layer having a thickness of about 1 to 10 μm in order to prevent the first electrode 7 from being oxidized and corroded.

A frame-shaped first metallizing layer 8 having a frame shape is attached to the entire upper surface of the frame 1c of the insulating base 1, and a second metallizing layer 8 is formed on the lower surface thereof. An insulating plate 2 having an electrode 9 and a second bonding metallization layer 10 electrically connected to the second electrode 9 forms a second bonding metallization layer 10 and a first bonding metallization layer 8 with a silver-copper brazing material. It is attached by brazing through a brazing material such as.

One of the metallized wiring conductors 5b is connected to the first bonding metallized layer 8, so that the electrodes of the semiconductor element 3 are connected to the metallized wiring conductor 5b by a conductive bonding material such as a solder bump 6. And the second electrode 9 is electrically connected to the electrode of the semiconductor element 3.

The first bonding metallization layer 8 is made of metal powder of metal such as tungsten, molybdenum, copper, silver or the like.
A metallized paste obtained by adding and mixing a solvent, a plasticizer, and a dispersant is printed and applied on a ceramic green sheet for the insulating substrate 1 by employing a conventionally known screen printing method, and is formed into a green ceramic for the insulating substrate 1. By firing together with the body, a predetermined frame-like pattern is formed on the upper surface of the frame 1c of the insulating base 1. In addition, on the exposed surface of the first bonding metallization layer 8, the first bonding metallization layer 8 is prevented from being oxidized and corroded, and the first bonding metallization layer 8 is protected.
In order to strengthen the bonding with the brazing material, a nickel plating layer having a thickness of about 1 to 10 μm is usually applied.

The insulating plate 2 attached to the upper surface of the insulating base 1 is made of a sintered body of aluminum oxide, sintered body of aluminum nitride, sintered body of mullite, sintered body of silicon nitride, sintered body of silicon carbide. A substantially flat plate made of a ceramic material such as a sintered body or glass-ceramic and having a thickness of 0.01 to 5 mm, and functions as a so-called pressure detecting diaphragm that bends toward the insulating base 1 in response to external pressure.

If the thickness of the insulating plate 2 is less than 0.01 mm, the mechanical strength of the insulating plate 2 is small, and there is a great risk that the insulating plate 2 will be broken when a large external pressure is applied thereto. On the other hand, if it exceeds 5 mm, it becomes difficult to bend under a small pressure, and it becomes unsuitable as a diaphragm for pressure detection. Therefore, the thickness of the insulating plate 2 is preferably in the range of 0.01 to 5 mm.

If the insulating plate 2 is made of, for example, an aluminum oxide sintered body, an organic binder, a solvent, and a plastic suitable for ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. A ceramic green sheet is obtained by adding and mixing a dispersing agent and a dispersing agent to form a slurry, and forming this into a sheet by employing a well-known doctor blade method. Thereafter, the ceramic green sheet is appropriately punched. By processing and cutting, a green ceramic molded body for the insulating plate 2 is obtained, and this green ceramic molded body is
It is manufactured by firing at a temperature of 00 ° C.

On the lower surface of the insulating plate 2, a substantially circular second electrode 9 for forming a capacitance and a substantially circular frame-shaped second metallizing layer 10 surrounding the second electrode 9 are adhered. The metallization conductor 11 for connection electrically connects the second electrode 9 and the second metallization layer 10 for bonding on the upper surface and inside.
Is attached.

The second electrode 9 functions as an electrode for forming a capacitance for a pressure-sensitive element together with the above-mentioned first electrode 7, and the second bonding metallization layer 10 serves to connect the insulating plate 2 to the insulating base 1. It functions as a bonding base metal layer for bonding to the substrate.
Then, by joining the second joining metallization layer 10 to the first joining metallization layer 8 via a brazing material such as a silver-copper brazing material, a closed space is formed between the upper surface of the insulating base 1 and the lower surface of the insulating plate 2. Is formed and the first bonding metallization layer 8 and the second electrode 9 are electrically connected.

At this time, the first electrode 7 and the second electrode 9
The space between the insulating base 1 and the insulating plate 2 is opposed to each other with a space formed therebetween. The areas of the first electrode 7 and the second electrode 9 and the first electrode 7 and the second electrode 9 A predetermined capacitance is formed in accordance with the distance between. When an external pressure is applied to the upper surface of the insulating plate 2, the insulating plate 2 bends toward the insulating base 1 according to the pressure, and the distance between the first electrode 7 and the second electrode 9 changes. Since the capacitance between the first electrode 7 and the second electrode 9 changes, it functions as a pressure-sensitive element that detects a change in external pressure as a change in capacitance.
Then, the change of the capacitance is transmitted to the semiconductor element 3 housed in the recess 1a via the metallized wiring conductors 5a and 5b, and the magnitude of the external pressure is known by performing arithmetic processing on the semiconductor element 3. be able to.

As described above, according to the pressure detecting device package of the present invention, the first electrode for forming the capacitance is provided on the other main surface of the insulating base 1 on which the semiconductor element 3 is mounted on one main surface. 7 and an insulating plate 2 having an inner surface facing the first electrode 7 and having a second electrode 9 for forming a capacitance is formed in a flexible state so as to form a closed space between the insulating plate 2 and the insulating base 1. Because of the joining, the container accommodating the semiconductor element 3 and the pressure-sensitive element are integrated, and as a result, the size of the pressure detection device can be reduced. Further, since the first electrode 7 and the second electrode 9 for forming the capacitance are connected to the semiconductor element 3 via the metallized wiring conductors 5a and 5b provided on the insulating base 1, the first electrode 7 and the second electrode 9 are formed. The electrode 9 can be connected to the semiconductor element 3 over a short distance, and as a result, an unnecessary capacitance generated between these metallized wiring conductors 5a and 5b is reduced to provide a highly sensitive pressure detecting device. Can be.

When the distance between the first electrode 7 and the second electrode 9 is less than 0.01 mm at 1 atm, when a large pressure is applied to the insulating plate 2, the first electrode 7 and the second electrode 9 There is a danger that the pressure cannot be detected due to contact with the electrode. On the other hand, if the distance exceeds 5 mm, the capacitance formed between the first electrode 7 and the second electrode 9 becomes small. , The sensitivity of detecting pressure tends to be low.
Therefore, the distance between the first electrode 7 and the second electrode 9 is preferably in the range of 0.01 to 5 mm at 1 atm.

Further, the second bonding metallization layer 10 has a frame shape surrounding the second electrode 9, and is formed by the connection metallization layer 11 provided on the upper surface and inside of the insulating plate 2.
Is connected to the second metallization layer 10, so that when the second metallization layer 10 is brazed to the first metallization layer 8, the first metallization layer 8 and the second metallization layer 8 It is possible to effectively prevent the brazing material joining the joining metallized layer 10 from flowing out to the second electrode 9. Therefore, in the pressure detection device package of the present invention,
No brazing material flows out to the second electrode 9 and the first electrode 7
The capacitance between the first electrode 9 and the second electrode 9 does not vary greatly due to the outflow of the brazing material.

If the distance w between the second electrode 9 and the second bonding metallization layer 10 is less than 0.1 mm, when the second bonding metallization layer 10 is brazed to the first bonding metallization layer 8, May flow out to the second electrode 9, while if it exceeds 2 mm, the first electrode 7 in the second electrode 9
And the area opposed to is narrow, and the sensitivity for detecting pressure tends to be low. Therefore, the second electrode 9
And the distance w between the second bonding metallization layer 10 is 0.1 to 2 m.
The range of m is preferred.

The second electrode 9, the second bonding metallization layer 10, and the connection metallization conductor 11 are made of metal powder such as tungsten or molybdenum / copper / silver. A metallized paste obtained by adding and mixing a binder, a solvent, a plasticizer, and a dispersant is applied by printing onto a ceramic green sheet for the insulating plate 2 by using a conventionally known screen printing method, and the green paste for the insulating plate 2 is formed. By firing together with the ceramic molded body, a predetermined pattern is formed on the upper and lower surfaces and inside of the insulating plate 2. The exposed surfaces of the second electrode 9, the second bonding metallization layer 10, and the connection metallization conductor 11 are oxidized and corroded by the second electrode 9, the second bonding metallization layer 10, and the connection metallization conductor 11. In order to prevent and improve the bonding between the second bonding metallization layer 10 and the brazing material, the thickness is usually 1 to 10 μm.
A nickel plating layer having a thickness of about 0.1 to 3 μm is further deposited on the surface of the metallized conductor 11 for connection.

In order to bond the insulating plate 2 to the insulating substrate 1, a nickel plating layer having a thickness of 1 to 10 μm is previously applied to the surfaces of the first bonding metallization layer 8 and the second bonding metallization layer 10, respectively. The insulating base 1 and the insulating plate 2 are sandwiched between a first joining metallization layer 8 and a second joining metallization layer 10 with a brazing material foil made of silver-copper brazing having a thickness of about 10 to 200 μm. And heating them to a temperature of about 850 ° C. in a reducing atmosphere to melt the brazing material foil and braze the first bonding metallization layer 8 and the second bonding metallization layer 10. Is done. At this time,
The second bonding metallization layer 10 is formed in a frame shape surrounding the second electrode 9 and is electrically connected to the second electrode 9 by the connection metallization conductor 11 provided on the upper surface of the insulating plate 2 and inside. Therefore, the brazing material is separated from the second electrode 9, so that the brazing material is prevented from flowing out to the second electrode 9.

Thus, according to the above-described package for a pressure detecting device, the semiconductor element 3 is mounted on the mounting portion 1b, and each electrode of the semiconductor element 3 is electrically connected to the metallized wiring conductor 5. By sealing the element 3, a pressure detecting device which is small in size, has high sensitivity, and is capable of accurately detecting external pressure without variation.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, in one example of the above-described embodiment, the connection metallization conductor 11 for electrically connecting the second electrode 9 and the second bonding metallization layer 10 is provided on a part of the upper surface of the insulating plate 2. 2, the connection metallized conductor 11 may be provided on the entire upper surface of the insulating plate 2. In this case, the metallizing conductor 11 for connection provided on the entire upper surface of the insulating plate 2 effectively functions as a barrier for preventing cracks, and it is extremely possible to prevent the insulating plate 2 from being cracked or broken due to external force or the like. It can be effectively prevented.

[0035]

As described above, according to the pressure detecting device package of the present invention, the first main surface of the insulating base on which the semiconductor element is mounted is provided with the second main surface for forming the capacitance. Since one electrode was provided and the insulating plate having the second electrode for forming the capacitance opposed to the first electrode was joined in a flexible state so as to form a closed space between the insulating plate and the insulating base. The container for accommodating the semiconductor element and the pressure-sensitive element are integrated, and as a result, the pressure detection device can be reduced in size and the wiring for connecting the electrode for pressure detection and the semiconductor element is shortened. An unnecessary capacitance generated between the wirings can be reduced to provide a highly sensitive pressure detection device. Further, a frame-shaped second bonding metallization layer brazed to the first bonding metallization layer is provided on the inner surface of the insulating plate so as to surround the second electrode, and the second bonding metallization layer and the second electrode Are electrically connected to each other through the metallizing conductor for connection provided inside and on the surface of the insulating plate, so that the brazing material for bonding the first metallizing layer for bonding and the second metallizing layer for bonding is formed on the second electrode. As a result, the capacitance formed between the first electrode and the second electrode does not vary due to the brazing material leakage, and the external pressure is accurately detected without variation. Can be provided.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of an embodiment of a package for a pressure detecting device according to the present invention.

FIG. 2 is a cross-sectional view showing another example of the embodiment of the pressure detection device package according to the present invention.

FIG. 3 is a sectional view showing a conventional pressure detecting device.

[Explanation of symbols]

 1. Insulating substrate 2. Insulating plate 3. Semiconductor element 7. First electrode 8. First metallizing layer 9 for first bonding 9.・ Second electrode 10 ・ ・ ・ ・ ・ ・ ・ Second bonding metallization layer 11 ・ ・ ・ ・ ・ ・ ・ Connection metallization conductor

Claims (1)

[Claims] 1. An insulating base having a mounting portion on one main surface on which a semiconductor element is mounted, and a plurality of insulating bases disposed on and inside the insulating base and electrically connected to respective electrodes of the semiconductor element. A wiring conductor, a first electrode for forming a capacitance, which is attached to the center of the other main surface of the insulating base, and is electrically connected to one of the wiring conductors, and the other main surface A frame-shaped first bonding metallization layer, which is attached to the outer periphery of the first electrode so as to surround the first electrode and is electrically connected to another one of the wiring conductors, between the central portion. An insulating plate joined to the insulating base in a flexible state so as to form an enclosed space; a second electrode attached to an inner main surface of the insulating plate so as to face the first electrode; The first electrode is attached to the main surface so as to surround the second electrode, and a brazing material is interposed on the first bonding metallization layer. And a frame-shaped second bonding metallization layer, which is bonded to the inner and outer main surfaces of the insulating plate, and electrically connects the second electrode to the second bonding metallization layer. A package for a pressure detecting device, comprising a metallized conductor.