JP2002118331A - Laminated semiconductor light emitting device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a laminated semiconductor light emitting device reduced in size by accurately conducting an optical alignment and a method for manufacturing the same. SOLUTION: The laminated semiconductor light emitting device comprises a first semiconductor light emitting element grown on a first board, and a second semiconductor light emitting element grown separately from the first element and directly adhered to the first element in a laminated state. In this case, the light emitting wavelength of the first element is different from that of the second element.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an integrated semiconductor light emitting device and a method of manufacturing the same, and more particularly to an integrated light emitting device in which a plurality of types of light emitting elements having different emission wavelengths are integrated on the same substrate and a method of manufacturing the same.

[0002]

2. Description of the Related Art At present, digital versatile disks (DVDs) capable of high-density recording and large-capacity digital versatile discs (DVDs) and DVD devices for reproducing the same are commercially available, and are attracting attention as products whose demands are expected to increase in the future.

A semiconductor laser is used as a light source for pickup in such an optical disk device. And
In response to the demand for higher capacity, the development of semiconductor lasers having shorter wavelengths has been promoted, and accordingly, disk devices of a new standard have appeared.

[0004] That is, although the CD standard using an AlGaAs-based 780 nm laser has been the mainstream, InGaAlP
With the advent of the 650 nm laser, the DVD standard has newly appeared. Recently, practical use of an InGaAlN-based 400 nm band violet blue semiconductor laser is imminent, and a new high-density disk system is expected to appear along with this.

In order to maintain compatibility among the plurality of disk systems, the pickup needs a semiconductor laser corresponding to each system. Therefore, the optical system of the pickup is generally very complicated. Attempts have been made to simplify an optical system in which a plurality of lasers are integrated on one chip. For example, in Japanese Patent Application Laid-Open No. 2000-11417, a 650 nm laser for DVD and a 780 nm laser for CD are integrated to simplify the pickup.

[0006]

In the above conventional example, both substrates of the two lasers are made of GaAs during crystal growth. Therefore, the integration of two wavelengths was successfully performed by using this. However, it has been extremely difficult to integrate a semiconductor laser using a different substrate crystal, such as a violet-blue semiconductor laser that will be put into practical use in the future.

On the other hand, GaAlAs having an emission wavelength of 780 nm used in an optical pickup of a conventional DVD device is used.
A compact disk (CD) and a mini disk (MD) that have been reproduced by a semiconductor laser can be used, and an InGaAlP semiconductor laser with an emission wavelength of 600 nm and a GaAlAs semiconductor laser with an emission wavelength of 700 nm are on the same substrate. Integrated light emitting device (for example,
1866651) has also been proposed.

However, in the same substrate integrated type light emitting device as described above, an InGaAlP-based semiconductor laser and a Ga
Since two lasers including an AlAs-based semiconductor laser are integrated, there is a problem in that the element manufacturing process is complicated, the yield is low, and the cost is not reduced.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to reduce the size of an integrated semiconductor light emitting device capable of accurately performing optical alignment. And a method for producing the same.

[0010]

Means for Solving the Problems The present invention (claim 1) provides:
A first semiconductor light emitting device grown and formed on a first substrate, and a first semiconductor light emitting device which is separately formed and grown and is directly bonded to the first semiconductor light emitting device in a stacked state. An integrated semiconductor light emitting device comprising two semiconductor light emitting elements, wherein an emission wavelength of the first semiconductor light emitting element and an emission wavelength of the second semiconductor light emitting element are different.

According to the present invention (claim 2), the laminate of the second semiconductor light-emitting element is directly bonded on the upper contact layer of the first semiconductor light-emitting element. An integrated semiconductor light emitting device is provided.

According to a third aspect of the present invention, in the second aspect, the laminate of the second semiconductor light emitting element directly adhered on the first semiconductor light emitting element is the first semiconductor light emitting element. The contact layer of the first semiconductor light-emitting element is formed smaller than the stacked body of the semiconductor light-emitting element, and the contact layer of the first semiconductor light-emitting element is exposed to the first contact. An integrated semiconductor light emitting device provided with an electrode for controlling a semiconductor light emitting element is provided.

The present invention (claim 4) provides a step of growing and forming a first semiconductor light emitting element laminate on a first substrate;
Growing and forming a second semiconductor light emitting element laminate having an emission wavelength different from the emission wavelength of the first semiconductor light emitting element on the second substrate; and stacking the second semiconductor light emitting element. Directly bonding the body to the first semiconductor light emitting element, and cutting out the individual chips in a state where the stacked body of the first semiconductor light emitting element and the stacked body of the second semiconductor light emitting element are integrated. And a method for manufacturing an integrated semiconductor light-emitting device.

According to the present invention (claim 5), in the above-mentioned claim 4, the second semiconductor light emitting element laminate is annealed in a vacuum or in an inert gas to thereby anneal the first semiconductor light emitting element. Provided is a manufacturing method characterized by being directly bonded to a light emitting element.

[0015] The present invention (claim 6) provides a substrate, a first semiconductor light emitting device, and a second semiconductor light emitting device grown and formed later on the substrate provided with the first semiconductor light emitting device. Wherein the emission wavelength of the first semiconductor light-emitting element is different from the emission wavelength of the second semiconductor light-emitting element.

The present invention (claim 7) provides an integrated semiconductor light-emitting device according to claim 6, wherein the first semiconductor light-emitting element is made of a nitride semiconductor.

According to the present invention (claim 8), in the above-mentioned claim 7, the first semiconductor light emitting element is preferably made of InGaAl.
An integrated semiconductor light emitting device comprising an N-based semiconductor is provided.

According to a ninth aspect of the present invention, in the ninth aspect of the present invention, the second semiconductor light emitting device is preferably composed of InGaAl.
An integrated semiconductor light emitting device comprising a P-based semiconductor is provided.

The present invention (claim 10) provides the integrated semiconductor light emitting device according to claim 6, wherein the substrate is a semiconductor substrate.

The present invention (claim 11) is based on claim 10
In the description, the integrated semiconductor light emitting device is provided, wherein the semiconductor substrate is an n-type substrate.

The present invention (claim 12) provides the above-mentioned claim 11.
In the above description, the integrated semiconductor light emitting device is provided, wherein the semiconductor substrate is a GaAs substrate.

According to the present invention (claim 13), the above-mentioned claim 11 is provided.
In the description, the integrated semiconductor light emitting device is provided, wherein the semiconductor substrate is a Si substrate.

According to the present invention (claim 14), in the above-mentioned claim 6, a hologram lens is formed on the Si substrate, and light from the first semiconductor light emitting element and the second semiconductor light emitting element is An integrated semiconductor light emitting device is provided which is output through the hologram lens and is adjusted to have the same optical axis.

The present invention (claim 15) is based on claim 14
In the description, there is further provided an integrated semiconductor light emitting device, further comprising a correction plate for correcting chromatic aberration of light output from the hologram lens.

According to the present invention (claim 16), a step of providing a stacked body of the first semiconductor light emitting element on the first substrate, and the step of providing the first semiconductor light emitting element on the first substrate A step of growing and forming a stacked body of a second semiconductor light emitting element having an emission wavelength different from the emission wavelength; and integrating the stacked body of the first semiconductor light emitting element and the stacked body of the second semiconductor light emitting element. Providing a method of manufacturing an integrated semiconductor light emitting device, comprising:

The present invention (claim 17) is based on claim 16
In the description, the stacked body of the second semiconductor light emitting device is:
A manufacturing method is provided in which the first semiconductor light emitting device is directly adhered to the first semiconductor light emitting device by performing annealing in a vacuum or an inert gas.

[0027] The present invention (claim 18) provides the above-mentioned claim 16.
In the above description, there is provided a method for manufacturing an integrated semiconductor light emitting device, wherein the first semiconductor light emitting element is made of a nitride semiconductor.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (1) First Embodiment FIG. 1 is a sectional structural view of an integrated semiconductor laser device according to a first embodiment. In on the sapphire substrate 140
A GaAlN-based 400 nm band semiconductor laser LD1 is formed, and an InGaAlP-based 650 nm band semiconductor laser LD2 is formed thereon.

The electrodes are n-type GaN 110 and n-type GaAs 1
29 and the p-type GaAs 121 are formed as an electrode 132, an electrode 130, and an electrode 131, respectively.
Drive. The semiconductor laser LD2 is driven by passing a current between the electrode 130 and the electrode 131. The semiconductor laser LD1 and the semiconductor laser LD2 can be driven independently.

The InGaAlN-based 400 nm band semiconductor laser LD1 and the InGaAlP-based 650 nm band semiconductor laser LD2 were separately formed in advance, and then bonded and manufactured.

The semiconductor laser LD1 was manufactured as follows. First, an n-type GaN contact layer 110, an n-type AlGaN cladding layer 109, an n-type G
aN optical guide layer 108, InGaAlN-based MQW active layer 107, p-type AlGaN cap layer 106, p-type GaN
The light guide layer 105, the p-type AlGaN cladding layer 104, and the p-type GaN cap layer 102 were sequentially laminated. Then p
Etching the upper part of the p-type GaN cap layer 102 and the upper part of the p-type GaN cap layer 104 into a stripe shape,
An n-type InGaAlN current confinement layer 103 was provided on both sides of the stripe. Finally, a p-type GaN contact layer 101 was formed on the p-type GaN cap layer 102 and the InGaAlN current confinement layer 103.

On the other hand, the semiconductor laser LD2 was formed as follows. First, on an n-type GaAs substrate 129, an n-type InGa
AlP cladding layer 128, InGaAlP light guide layer 1
27, InGaAlP-based MQW active layer 126, InGa
An AlP light guide layer 125, a p-type InGaAlP cladding layer 124, and a p-type InGaP cap layer 122 were sequentially stacked. Next, the p-type InGaAlP cladding layer 124 and the p-type
The type InGaP cap layer 122 was etched on the stripe, and n-type GaAs current confinement layers 123 were provided on both sides of the stripe. On the last p-type InGaP cap layer 102 and n-type GaAs current confinement layer 123, a p-type GaAs contact layer 121 was formed.

Semiconductor laser LD fabricated as described above
After etching the n-type GaAs substrate 129 to an appropriate thickness, the semiconductor laser LD fabricated as described above
1 p-type GaN contact layer 101 and semiconductor laser LD
The second p-type GaAs contact layer 121 is bonded. This bonding can be realized by annealing for 20 minutes or more in a vacuum at 100 ° C. to 900 ° C. or in an inert gas to evaporate the moisture existing on the bonding surface.

Then, the side portions of the semiconductor laser LD2 and the semiconductor laser LD1 are etched in a terrace shape so that a part of the n-type GaN contact layer 110 and a part of the p-type GaAs contact layer 121 are exposed. By forming the electrodes 131 and 132, a laser wafer on which two types of semiconductor lasers are mounted is completed.

The laser wafer prepared as described above was cut into chips by cleavage, and the sapphire substrate surface was mounted on a heat sink. Since the GaN-based semiconductor has excellent thermal conductivity, the InGaAlP-based 650 nm band semiconductor laser LD2 can operate satisfactorily without any heat generation problem even if it is formed on the semiconductor laser LD1.

(2) Second Embodiment FIG. 2 is a sectional structural view of an integrated semiconductor laser device according to a second embodiment. I on the p-type GaAs substrate 201
An nGaAlN-based 400 nm band semiconductor laser LD1 is formed, and an InGaAlP-based 650 nm band semiconductor laser LD2 is formed thereon. The electrodes are respectively formed on the p-type GaAs substrate 201, the p-type GaAs substrate 221 and the n-type GaAs substrate 229 by the electrodes 232, 230 and 23.
1, the semiconductor laser LD1 can be driven independently by flowing a current between the electrode 232 and the electrode 231, and the semiconductor laser LD2 can be driven independently by flowing a current between the electrode 230 and the electrode 231.

The InGaAlN-based 400 nm band semiconductor laser LD1 and the InGaAlP-based 650 nm band semiconductor laser LD2 were separately prepared in advance, and then manufactured by bonding in the same manner as in the first embodiment.

The semiconductor laser LD1 was manufactured as follows. First, an n-type GaN contact layer 2 is formed on a sapphire substrate.
10, n-type AlGaN cladding layer 209, n-type GaN optical guide layer 208, InGaAlN-based MQW active layer 20
7, p-type AlGaN cap layer 206, p-type GaN light guide layer 205, p-type AlGaN cladding layer 204 and p-type
Type GaN cap layers 202 were sequentially laminated. Next, p-type A
The upper portion of the lGaN cladding layer 204 and the p-type GaN cap layer 202 are etched into a stripe shape, and the n-type InGaAlN current confinement layer 20 is formed on both sides of the stripe.
3 were provided. Finally, the p-type GaN cap layer 202 and I
A p-type GaN contact layer 201 was formed on the nGaAlN current confinement layer 203.

On the other hand, the semiconductor laser LD2 was formed as follows. First, an n-type GaAs substrate 229 is formed on a GaAs substrate.
An n-type InGaAlP cladding layer 228 and InGaAs
1P light guide layer 227, InGaAlP based MQW active layer 226, InGaAlP light guide layer 225, p-type InG
The aAlP cladding layer 224 and the p-type InGaP cap layer 222 were sequentially laminated. Next, the p-type InGaAlP cladding layer 224 and the p-type InGaP cap layer 222 were etched on the stripe, and an n-type GaAs substrate 223 current confinement layer was provided on both sides of the stripe. Finally p
A p-type GaAs contact layer 221 was formed on the n-type InGaP gap layer 222 and the n-type GaAs current confinement layer 223.

Next, in the semiconductor laser LD1, the sapphire substrate is removed by etching, and the n-type GaN contact layer 2 is removed.
10 were exposed. In the semiconductor laser LD2, the n-type GaAs substrate 229 was etched to about several μm. Next, the exposed n-type GaN contact layer 210 of the semiconductor laser LD1 and the n-type GaAs substrate 2 of the semiconductor laser LD2
29 were adhered. Then, the side portion of the semiconductor laser LD2 is set so that a part of the n-type GaAs substrate 229 is exposed.
After etching in a terrace shape, the electrodes 230, 23
1,232 were formed. As a result, a laser wafer on which two types of semiconductor lasers are mounted is completed. The laser wafer prepared as described above was cut into chips by cleavage, and the surface of the electrode 232 was mounted on a heat sink.

In the first embodiment, when the flatness of the crystal growth surface is poor, the yield of bonding is significantly reduced. In this embodiment, the semiconductor laser LD1 and the semiconductor laser LD2 are used.
Since the bonding is performed using the surface after the substrate is peeled off, the flatness of the bonding surface can be easily secured, and the bonding can be performed with a high yield. Since a GaN-based semiconductor has excellent thermal conductivity, an InGaAlP-based 650 nm band semiconductor laser LD
2 can operate satisfactorily even if it is formed on the semiconductor laser LD1, as described above.

(3) Third Embodiment FIG. 3 is a sectional structural view of an integrated semiconductor laser device according to a third embodiment. This embodiment is an example of three-wavelength integration. InGaAlN-based 4 on p-type GaAs substrate 301
A 00 nm band semiconductor laser LD1 is formed, and an InGaAlP-based 650 nm band semiconductor laser LD2 is formed thereon.
An AlGaAs-based 780 nm band semiconductor laser LD3 is formed. The electrodes are p-type GaAs 301 and p-type GaAs
Electrodes 332 and n-type GaAs 329, respectively.
The semiconductor laser LD1 is formed as the electrodes 330a, 330b, and 331, and a current flows between the electrodes 332 and 331, and the semiconductor laser LD2 flows between the electrodes 330a and 331 to change the currents 330b and 331.
The semiconductor laser LD3 can be driven independently by passing a current between them.

An InGaAlN-based 400 nm band semiconductor laser LD1 was fabricated in the same manner as in the second embodiment.
InGaAlP-based 650 nm band semiconductor laser LD2
And the AlGaAs-based 780 nm semiconductor laser LD3 are:
It was created in advance by the method disclosed in the above-mentioned JP-A-2000-11417.

That is, the semiconductor laser LD2 was formed as follows. First, an n-type GaAs substrate 329 is formed on a GaAs substrate.
a, an n-type InGaAlP cladding layer 328a, InG
aAlP light guide layer 327a, InGaAlP based MQW
An active layer 326a, an InGaAlP light guide layer 325a,
p-type InGaAlP cladding layer 324a, p-type InGa
P cap layers 322a were sequentially laminated. Next, p-type InG
The aAlP cladding layer 324a and the p-type InGaP cap layer 322a were etched on the stripe, and an n-type GaAs substrate 323a current confinement layer was provided on both sides of the stripe. Finally, p-type GaAs is formed on the p-type InGaP gap layer 322a and the n-type GaAs current confinement layer 323a.
The contact layer 321a was formed.

On the other hand, the semiconductor laser LD3 was formed as follows. First, an n-type GaAs substrate 329 is formed on a GaAs substrate.
n-type InGaAlP cladding layer 328b on Inb
aAlP light guide layer 327b, InGaAlP based MQW
An active layer 326b, an InGaAlP light guide layer 325b,
p-type InGaAlP cladding layer 324b, p-type InGa
P cap layers 322b were sequentially laminated. Next, p-type InG
The aAlP cladding layer 324b and the p-type InGaP cap layer 322b were etched on the stripe, and an n-type GaAs substrate 323b current confinement layer was provided on both sides of the stripe. Finally, p-type GaAs is formed on the p-type InGaP gap layer 322b and the n-type GaAs current confinement layer 323b.
The contact layer 321b was formed.

The integrated laser device shown in FIG. 3 was manufactured by bonding these three semiconductor lasers according to the procedure shown in the second embodiment.

(4) Fourth Embodiment FIG. 4 shows a fourth embodiment. In the integrated semiconductor laser device according to the present embodiment, the same n-type GaAs substrate 4 is used.
A GaAlAs-based semiconductor laser LD1 having an emission wavelength of 700 nm and InGa having an emission wavelength of 600 nm
An AlP-based semiconductor laser LD2 and an InGaAlN-based semiconductor laser LD3 having an emission wavelength of 400 nm are formed separately from each other.

First, an InGaAlN-based semiconductor laser L
D3 is formed on a sapphire substrate in advance. That is, after forming an InGaAlN-based buffer layer on a sapphire substrate,
In FIG. 4, the n-type GaN contact layer 440 and the n-type AlGaN
Clad layer 441, n-type light guide layer 442, InGaAs
Active layer 443 of MQW structure composed of 1N system, p-type AlG
aN cap layer 444, p-type GaN light guide layer 445,
Portions to be the p-type AlGaN cladding layer 446 and the p-type GaN cap layer 447 are sequentially laminated on a sapphire substrate in a CVD apparatus.

Here, the p-type AlGaN cladding layer 446
And the p-type GaN cap layer 447 have a stripe shape, and n-type InGaAs is formed on both sides of the stripe portion.
An 1N current confinement layer 448 is provided to form a current confinement structure. Striped p-type GaN cap layer 4
A p-type GaN contact layer 449 is provided on the 47 and the n-type InGaAlN current confinement layer 448, and a p-type electrode 450 is formed thereon. Au on the p-type electrode 450
Is formed.

This InGaAlN based semiconductor laser LD3
Is InG formed on a sapphire substrate after crystal growth.
a The epiwafer from which the AlN-based buffer layer has been removed by etching is cut into stripes, and a long-wavelength semiconductor laser L is cut.
D, that is, it is previously attached to an n-type GaAs substrate on which the semiconductor laser LD1 and the semiconductor laser LD2 are grown.

As described above, the GaAlAs-based semiconductor laser LD1 is formed on an n-type GaAs substrate 400 on which the InGaAlN-based semiconductor laser LD3 is partially adhered.
As buffer layer 401, n-type GaAs contact layer 40
2. An n-type InGaAlP cladding layer 403, a single quantum well (SQW) structure or a multiple quantum well (MQW) structure active layer 404, a p-type InGaAlP cladding layer 405, and a p-type InGaP cap layer 406 are sequentially formed in a CVD apparatus. Grown and stacked. In general, a nitride semiconductor is resistant to high temperatures and does not suffer from deterioration of characteristics that cause a problem at a temperature at which the GaAlAs-based semiconductor laser LD1 is formed. GaAlAs-based semiconductor laser LD1 (or
As a method for laminating an InGaAlP-based semiconductor laser LD2) described later, there is MOCVD or the like.

The upper portion of the p-type InGaAlP cladding layer 405 and the p-type InGaP cap layer 406 have a stripe shape, and an n-type GaAs current confinement layer 407 is provided on both sides of the stripe portion to form a current confinement structure. Striped p-type GaAs cap layer 406
A p-type GaAs contact layer 408 is provided on the n-type GaAs current confinement layer 407, and a p-type electrode 409 is formed thereon.
Are formed. A heat sink 410 made of Au is formed on the p-type electrode 409.

In the InGaAlP semiconductor laser LD2, similarly, the InGaAlN semiconductor laser LD3
Is n-type on the n-type GaAs substrate 400 partially adhered.
-Type GaAs buffer layer 421, n-type GaAs contact layer 422, n-type InGaAlP cladding layer 423, single quantum well (SQW) structure or multiple quantum well (MQW)
Active layer 424 having structure, p-type InGaAlP cladding layer 4
25 and a p-type InGaP cap layer 426 are sequentially stacked.

The InGaAlP-based semiconductor laser LD2 is
It may be formed before or after the GaAlAs-based semiconductor laser LD1.

The upper portion of the p-type InGaAlP cladding layer 425 and the p-type InGaP cap layer 426 have a stripe shape, and an n-type GaAs current confinement layer 427 is provided on both sides of the stripe portion to form a current confinement structure. Striped p-type InGaP cap layer 42
6 and p-type GaAs on the n-type GaAs current confinement layer 427.
A contact layer 428 is provided, on which the p-type electrode 42
9 are formed. A heat sink 430 made of Au is formed on the p-type electrode 429.

On the back surface of the n-type GaAs substrate 400, an n-type electrode 460 is formed. When a light emitting device in which three wavelengths are integrated is used for a pickup head, AlGaAs is used.
Heat sink 410 of In-based semiconductor laser LD1, InGa
Heat sink 430, I of AlP semiconductor laser LD2
Heat sink 45 of nGaAlN based semiconductor laser LD3
Reference numerals 1 are respectively soldered on three wires provided on the semiconductor laser LD package base in a state of being electrically separated from each other.

In the integrated light emitting device according to the fourth embodiment having the above structure, the p-type electrode 409 and the n-type electrode 4
The GaAlAs-based semiconductor laser LD1 can be driven by passing a current between the p-type electrode 429 and the p-type electrode 429.
By flowing a current between the gate electrode and the n-type electrode 460, the InG
aAlP-based semiconductor laser LD2 can be driven,
By flowing a current between the p-type electrode 450 and the n-type electrode 460, the InGaAlN-based semiconductor laser LD3 can be driven.

Then, the AlGaAs semiconductor laser LD1
, A laser beam having a wavelength of 780 nm can be extracted by driving the InGaAlP-based semiconductor laser LD2, and a laser beam having a wavelength of 650 nm can be obtained by driving the InGaAlP-based semiconductor laser LD3. Laser light can be extracted. The selection of whether to drive the GaAlAs-based semiconductor laser LD1, the InGaAlP-based semiconductor laser LD2, or the InGaAlN-based semiconductor laser LD3 can be made by switching an external switch or the like.

In the fourth embodiment, the InGaAlN-based semiconductor has a high thermal conductivity and has a two-wavelength semiconductor laser LD1.
And the heat generated by the semiconductor laser LD2 can be effectively radiated. Further, since the InGaAlN-based semiconductor is as hard as sapphire, it is easy to cleave the end face using this element, and
The wavelength resonator length can be matched. Further, since the heat sink is formed in the shape of the p-electrode of each semiconductor laser LD, the n-type substrate can be soldered to the semiconductor laser LD package base, and defects due to short circuit of the pn junction can be suppressed.

(5) Fifth Embodiment FIG. 5 shows a fifth embodiment. In the integrated semiconductor laser device according to the present embodiment, the same n-type Si substrate 500 is used.
Above, a GaAlAs-based semiconductor laser LD1 having an emission wavelength of 700 nm and InGaAl having an emission wavelength of 600 nm
P-based semiconductor laser LD2 and I with emission wavelength of 400 nm band
The nGaAlN-based semiconductor laser LD3 is formed separately from each other.

In the GaAlAs-based semiconductor laser LD1, the n-type GaAs contact layer 501 and the n-type InGa
An AlP cladding layer 502, an active layer 503 having a single quantum well (SQW) structure or a multiple quantum well (MQW) structure, p
InGaAlP cladding layer 504 and p-type InGaP
Cap layers 505 are sequentially stacked. p-type InGa
The upper part of the AlP cladding layer 504 and the p-type InGaP cap layer 505 have a stripe shape, and an n-type GaAs current confinement layer 506 is provided on both sides of the stripe portion to form a current confinement structure. A p-type GaAs contact layer 507 is provided on the p-type InGaP cap layer 505 and the n-type GaAs current confinement layer 506 in a stripe shape, and a p-type electrode 508 is formed thereon, and Au is formed on the p-type electrode 508. Is formed.

In the InGaAlP semiconductor laser LD2, the n-type GaAs contact layer 521 and the n-type InG
aAlP cladding layer 522, active layer 523 having a single quantum well (SQW) structure or a multiple quantum well (MQW) structure,
p-type InGaAlP cladding layer 524 and p-type InGa
P cap layers 525 are sequentially stacked. p-type InG
a Top of aAlP cladding layer 524 and p-type InGaP
The cap layer 525 has a stripe shape, and n-type GaAs current confinement layers 526 are provided on both sides of the stripe portion to form a current confinement structure. A p-type GaAs contact layer 527 is provided on the stripe-shaped p-type InGaP cap layer 525 and the n-type GaAs current confinement layer 526, and a p-type electrode 528 is formed thereon, and Au is formed on the p-type electrode 528. A heat sink 529 is formed.

In the InGaAlN-based semiconductor laser LD3, the n-type GaN contact layer 541 and the n-type AlGa
An N cladding layer 542, an active layer 543 having a single quantum well (SQW) structure or a multiple quantum well (MQW) structure made of InGaAlN, a p-type AlGaN cladding layer 545, and a p-type GaN cap layer 546 are sequentially stacked.
Upper part of p-type AlGaN cladding layer 545 and p-type Ga
The N cap layer 546 has a stripe shape extending in one direction. N-type InGa
An AlN current confinement layer 547 is provided to form a current confinement structure. The p-type GaN cap layer 546 and the n-type InGaAlN current confinement layer
A type GaN contact layer 548 is provided, a p-type electrode 549 is formed thereon, and a heat sink 550 made of Au is formed on the p-type electrode 549.

On the back surface of the n-type Si substrate 500, an n-type electrode 5
60 are formed. When a light emitting device having three integrated wavelengths is used for the pickup head, the thickness of the Au heat sink is adjusted and the heat sink 509 of the AlGaAs semiconductor laser LD1 and the InGaAlP semiconductor laser LD are adjusted.
The two heat sinks 529 and the heat sink 550 of the InGaAlN-based semiconductor laser LD3 are soldered on three wires provided on the semiconductor laser LD package base in a state of being electrically separated from each other.

In the integrated light emitting device according to the fifth embodiment configured as described above, the p-type electrode 508 and the n-type electrode 5
The GaAlAs-based semiconductor laser LD1 can be driven by passing a current between the p-type electrode 528 and the p-type electrode 528.
By flowing a current between the gate electrode and the n-type electrode 560, InG
aAlP-based semiconductor laser LD2 can be driven,
By flowing a current between the p-type electrode 549 and the n-type electrode 560, the InGaAlN-based semiconductor laser LD3 can be driven. And AlGaAs
By driving the system semiconductor laser LD1, the wavelength 700
nm laser light can be extracted, and InGaAlP
Driving the semiconductor laser LD2, the wavelength 600
nm laser light can be extracted, and InGaAlN
By driving the semiconductor laser LD3, a wavelength of 400
The laser beam in the nm band can be extracted. Driving the GaAlAs-based semiconductor laser LD1;
Driving the InGaAlP based semiconductor laser LD2,
The selection of whether to drive the nGaAlN-based semiconductor laser LD3 can be made by switching an external switch or the like.

Semiconductor laser LD1, semiconductor laser LD2
The semiconductor laser LD3 is obtained by bonding an epi-wafer from which a substrate has been removed onto an n-type Si substrate 500 by bonding, and annealing the bonded wafer at a temperature of 100 ° C. to 900 ° C. in a vacuum or an inert gas for 20 minutes or more. It can be realized by evaporating the intervening moisture.

In this configuration, heat generated by each element can be radiated from the heat sink formed on the p-type electrode, and can operate stably up to high temperatures. When the n-type Si substrate 500 is mounted on the semiconductor laser LD package base, the heat sink reduces the heat radiation effect and the bonding damage, so that a highly reliable device can be realized. Further, a hologram lens is formed on the n-type Si substrate, and the light emitted from each semiconductor laser LD can be emitted onto the Si substrate, so that the emission spot becomes one and the adjustment of the optical system becomes easy. That is, the light from the three semiconductor lasers is emitted through the hologram lens and can be adjusted to have the same optical axis. Further, by using a correction plate for correcting chromatic aberration, the spot position of each semiconductor laser LD can be made one, and it can be used in the same manner as a single monochromatic semiconductor laser, and laser beams of a plurality of wavelengths can share the same optical axis. It can also emit the light that it has.

(6) Sixth Embodiment FIG. 6 shows a sixth embodiment. In the integrated semiconductor laser device according to the present embodiment, n
The emission wavelength is 7 on the same substrate on which the mold electrode 660 is formed.
00 nm band GaAlAs semiconductor laser LD1 and 600 nm InGaAlP semiconductor laser LD
2 and an InGaAlN-based semiconductor laser LD3 having an emission wavelength of 400 nm are formed separately from each other.

In the GaAlAs-based semiconductor laser LD1, the n-type electrode 601, the n-type GaAs contact layer 60
2. An n-type InGaAlP cladding layer 603, an active layer 604 having a single quantum well (SQW) structure or a multiple quantum well (MQW) structure, a p-type InGaAlP cladding layer 605, and a p-type InGaP cap layer 606 are sequentially stacked. The upper portion of the p-type InGaAlP cladding layer 605 and the p-type InGaP cap layer 606 have a stripe shape, and an n-type GaAs current confinement layer 607 is provided on both sides of the stripe portion to form a current confinement structure. Striped p-type InGaP cap layer 606 and n
A p-type GaAs contact layer 608 is provided on the type GaAs current confinement layer 607, a p-type electrode 609 is formed thereon, and a heat sink 610 made of Au is formed on the p-type electrode 609.

In the InGaAlP-based semiconductor laser LD2, the n-type electrode 621, the n-type GaAs contact layer 6
22, an n-type InGaAlP cladding layer 623, an active layer 624 having a single quantum well (SQW) structure or a multiple quantum well (MQW) structure, a p-type InGaAlP cladding layer 625
And a p-type InGaP cap layer 626 are sequentially stacked. The upper portion of the p-type InGaAlP cladding layer 625 and the p-type InGaP cap layer 626 have a stripe shape extending in one direction. An n-type GaAs current confinement layer 627 is provided on both sides of the stripe portion to form a current confinement structure. Striped p-type InGa
P cap layer 626 and n-type GaAs current confinement layer 627
A p-type GaAs contact layer 628 is provided thereon, a p-type electrode 629 is formed thereon, and a heat sink 630 made of Au is formed on the p-type electrode 629.

In the InGaAlN based semiconductor laser LD3, the n-type electrode 641, the n-type GaN contact layer 64
2, n-type AlGaN cladding layer 643, InGaAlN
An active layer 644 having a single quantum well (SQW) structure or a multiple quantum well (MQW) structure, a p-type AlGaN cap layer 645, a p-type AlGaN cladding layer 646, and a p-type GaN cap layer 647 are sequentially stacked. . p
On top of p-type AlGaN cladding layer 646 and p-type GaN
The cap layer 647 has a stripe shape, and an n-type InGaAlN current confinement layer 648 is provided on both sides of the stripe portion to form a current confinement structure. Striped p-type GaN cap layer 647 and n-side InGaAs
The p-type GaN contact layer 64 is formed on the 1N current confinement layer 648.
9 are provided, on which a p-type electrode 650 is formed.
A heat sink 651 made of Au is formed on the mold electrode 650.

Semiconductor laser LD1, semiconductor laser LD2
And a semiconductor laser LD3 in which an n-type electrode and a p-type electrode are formed on an epiwafer from which a substrate has been removed, respectively.
Affixed on an n-electrode 660 on a substrate 600;
This can be realized by annealing in a vacuum of 00 ° C. to 900 ° C. or in an inert gas for 20 minutes or more to evaporate moisture existing on the bonding surface. Alternatively, the heat sink 612 of the AlGaAs semiconductor laser LD1, the heat sink 630 of the InGaAlP semiconductor laser LD2, and the heat sink 651 of the InGaAlN semiconductor laser LD3 are soldered on the electrode pads on the Si substrate in a state where they are electrically separated from each other. ing.

In the integrated light emitting device of the sixth embodiment having the structure described above, the p-type electrode 609 and the n-type electrode 6
01, the GaAlAs-based semiconductor laser LD1 can be driven, and the p-type electrode 629 can be driven.
By flowing a current between the gate electrode and the n-type electrode 621, the InG
aAlP-based semiconductor laser LD2 can be driven,
By flowing a current between the p-type electrode 650 and the n-type electrode 641, the InGaAlN-based semiconductor laser LD3 can be driven. And AlGaAs
By driving the system semiconductor laser LD1, the wavelength 700
nm laser light can be extracted, and InGaAlP
Driving the semiconductor laser LD2, the wavelength 600
nm laser light can be extracted, and InGaAlN
By driving the semiconductor laser LD3, a wavelength of 400
The laser beam in the nm band can be extracted. Driving the GaAlAs-based semiconductor laser LD1;
Driving the InGaAlP based semiconductor laser LD2,
The selection of whether to drive the nGaAlN-based semiconductor laser LD3 can be made by switching an external switch or the like.

With this configuration, it is also possible to integrate a semiconductor laser drive circuit on the n-type Si substrate 600. In addition, the surge breakdown voltage can be increased by making the Si substrate used this time a p-type, and the reliability has been dramatically improved. Also, by using an insulating substrate, the package is not a common electrode for each laser, so that the design of the optical head is facilitated.

In the fourth to sixth embodiments, the laser is excited in a direction perpendicular to the plane of the drawing. A large number of semiconductor laser devices cut into a rectangular parallelepiped elongated in that direction are arranged in parallel on a substrate with a certain interval therebetween. Thereafter, a semiconductor laser device having another emission wavelength is laminated at a position between the rectangular parallelepipeds by the method described above.

Then, the chips are cut in a direction perpendicular to the direction in which the laser is excited, and cut out in parallel with the direction in which the laser is excited. can do.

[0077]

As described above, according to the integrated semiconductor light emitting device of the present invention, it is possible to integrate semiconductor light emitting elements having different emission wavelengths and semiconductor light emitting elements having different crystal materials on the same substrate. it can.

As described above, integrating the semiconductor light emitting devices having different emission wavelengths and the semiconductor light emitting devices having different crystal materials on the same substrate is very advantageous for miniaturization.

A more important effect is that optical alignment is performed with high accuracy. That is, compared to the case where individually created elements are mounted on a substrate,
When they are formed on the same substrate, much higher accuracy can be obtained.

[Brief description of the drawings]

FIG. 1 is a sectional structural view of an integrated semiconductor laser device according to a first embodiment of the present invention.

FIG. 2 is a sectional structural view of an integrated semiconductor laser device according to a second embodiment of the present invention.

FIG. 3 is a sectional structural view of an integrated semiconductor laser device according to a third embodiment of the present invention.

FIG. 4 is a sectional view of a semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 5 is a sectional view of a semiconductor light emitting device according to a fifth embodiment of the present invention.

FIG. 6 is a sectional view of a semiconductor light emitting device according to a sixth embodiment of the present invention.

[Explanation of symbols]

101,201,301 p-type GaN contact layer 102,202,302 p-type GaN cap layer 103,203,303 n-type InGaAlN current confinement layer 104,204,304 p-type AlGaN cladding layer 105,205,305 p-type GaN light Guide layers 106, 206, 306 P-type AlGaN cap layers 107, 207, 307 InGaAlN-based MQW active layers 108, 208, 308 n-type GaN optical guide layers 109, 209, 309 n-type AlGaN cladding layers 110, 210, 310 n-type GaN contact layers 121,221,321 p-type GaAs contact layers 122,222,322 p-type InGaP cap layers 123,223,323 n-type GaAs current confinement layers 124,224,324 p-type InGaAlP cladding layers 125,2 25,325 InGaAlP light guide layer 126,226,326 InGaAlP based MQW active layer 127,227,327 InGaAlP light guide layer 128,228,328 n-type InGaAlP clad layer 129,229,329 n-type GaAs contact layer 130 n electrode 230 , 330a, 330b p electrode 131 common p electrode 231 331 common n electrode 132 n electrode 232, 332 p electrode 140 sapphire substrate 400, 500, 600 n-type GaAs substrate 401 n-type GaAs buffer layer 402, 501, 602 n-type GaAs Contact layers 403, 502, 603 n-type InGaAlP cladding layers 404, 503, 604 Active layers 405, 504, 605 having a single quantum well (SQW) structure or multiple quantum well (MQW) structure GaAlP cladding layers 406, 505, 606 p-type InGaP cap layers 407, 506, 607 n-type GaAs current confinement layers 408, 507, 608 p-type GaAs contact layers 409, 508, 609 p-type electrodes 410, 509, 610 Au Heat sink 421 n-type GaAs buffer layer 422, 521, 622 n-type GaAs contact layer 423, 522, 623 n-type InGaAlP cladding layer 424, 523, 624 Activity of single quantum well (SQW) structure or multiple quantum well (MQW) structure Layers 425, 524, 625 p-type InGaAlP cladding layers 425, 525, 626 p-type InGaP cap layers 427, 526, 627 n-type GaAs current confinement layers 428, 527, 628 p-type GaAs contact layers 429, 528, 6 29 Heat sink 440, 541, 642 made of p-type electrode 430, 529, 630 Au n-type GaN contact layer 441, 542, 643 n-type AlGaN cladding layer 442 n-type light guide layer 443, 543, 644 M made of InGaAlN system
QW active layer 444, 544, 645 p-type AlGaN cap layer 445 p-type GaN light guide layer 446, 545, 646 p-type AlGaN cladding layer 447, 546, 647 p-type GaN cap layer 448, 547, 648 n-type InGaAlN Current confinement layer 449, 548, 649 P-type GaN contact layer 450, 549, 650 Heat sink 4 made of p-type electrode 451, 550, 651 Au
51 460, 560, 601, 621, 641, 660 n
Type electrode

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5F073 AA74 AB04 BA05 CA14 CA17 CB02 CB05 EA04 EA05 GA03

Claims (18)

[Claims] 1. A first semiconductor light emitting device grown and formed on a first substrate, and a first semiconductor light emitting device grown and formed separately from the first semiconductor light emitting device. An integrated semiconductor light emitting device comprising a second semiconductor light emitting element directly adhered, wherein an emission wavelength of the first semiconductor light emitting element is different from an emission wavelength of the second semiconductor light emitting element. 2. The integrated semiconductor light emitting device according to claim 1, wherein a stacked body of said second semiconductor light emitting device is directly bonded on an upper contact layer of said first semiconductor light emitting device. apparatus. 3. The stacked body of the second semiconductor light emitting element directly adhered on the first semiconductor light emitting element is shaped smaller than the stacked body of the first semiconductor light emitting element, Thereby, the contact layer of the first semiconductor light emitting element is exposed, and the electrode for controlling the first semiconductor light emitting element is provided on the exposed contact layer of the first semiconductor light emitting element. 3. The integrated semiconductor light emitting device according to claim 2, wherein: 4. A step of growing and forming a stacked body of a first semiconductor light emitting element on a first substrate; and a step of emitting light having a wavelength different from that of the first semiconductor light emitting element on a second substrate. A step of growing and forming a second semiconductor light emitting element having a wavelength; a step of directly bonding the second semiconductor light emitting element to the first semiconductor light emitting element; A method of manufacturing an integrated semiconductor light emitting device, comprising: cutting out a stack of elements and a stack of the second semiconductor light emitting elements into individual chips in an integrated state. 5. The laminate of the second semiconductor light emitting device,
5. The method for manufacturing an integrated semiconductor light emitting device according to claim 4, wherein the first semiconductor light emitting device is directly bonded to the first semiconductor light emitting device by annealing in a vacuum or an inert gas. 6. A first semiconductor light emitting device comprising: a substrate; a first semiconductor light emitting device; and a second semiconductor light emitting device grown and formed later on the substrate provided with the first semiconductor light emitting device. An integrated semiconductor light emitting device, wherein an emission wavelength of the semiconductor light emitting element is different from an emission wavelength of the second semiconductor light emitting element. 7. The integrated semiconductor light emitting device according to claim 6, wherein said first semiconductor light emitting element is made of a nitride semiconductor. 8. The semiconductor device according to claim 1, wherein the first semiconductor light emitting device is InGa.
8. The integrated semiconductor light emitting device according to claim 7, comprising an AlN-based semiconductor. 9. The method according to claim 9, wherein the second semiconductor light emitting element is InGa.
9. The integrated semiconductor light emitting device according to claim 8, comprising an AlP-based semiconductor. 10. The integrated semiconductor light emitting device according to claim 6, wherein said substrate is a semiconductor substrate. 11. The integrated semiconductor light emitting device according to claim 10, wherein said semiconductor substrate is an n-type substrate. 12. The integrated semiconductor light emitting device according to claim 11, wherein said semiconductor substrate is a GaAs substrate. 13. The integrated semiconductor light emitting device according to claim 11, wherein said semiconductor substrate is a Si substrate. 14. A hologram lens is formed on the Si substrate, and light from the first semiconductor light emitting device and the second semiconductor light emitting device is output through the hologram lens and has the same optical axis. 7. The integrated semiconductor light emitting device according to claim 6, wherein the integrated semiconductor light emitting device is adjusted as described above. 15. The integrated semiconductor light emitting device according to claim 14, further comprising a correction plate for correcting chromatic aberration of light output from the hologram lens. 16. A step of providing a stacked body of a first semiconductor light emitting element on a first substrate, and an emission wavelength different from an emission wavelength of the first semiconductor light emitting element on the first substrate. Growing and forming a second semiconductor light emitting element having a stacked body; and forming each of the first semiconductor light emitting element stacked body and the second semiconductor light emitting element stacked body into individual chips. A method for manufacturing an integrated semiconductor light emitting device, comprising: 17. The method according to claim 16, wherein the stack of the second semiconductor light emitting devices is directly bonded to the first semiconductor light emitting device by annealing in a vacuum or in an inert gas. A manufacturing method of the integrated semiconductor light emitting device according to the above. 18. The method according to claim 16, wherein the first semiconductor light emitting element is made of a nitride semiconductor.