JP2002080566A - Epoxy rein composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin composition for semiconductor sealing use free from any halogen-based flame retardant and antimony compound and excellent in moldability, flame redundancy, high-temperature storability, moistureproof reliability and soldering crack resistance. SOLUTION: The epoxy resin composition for semiconductor sealing use is characterized by essentially comprising (A) an epoxy resin, (B) a phenolic resin, (C) a curing promoter, (D) an inorganic filler, (E) a compound of the formula (2): MgxAlyOz having an average particle size of 0.5-15 μm, containing <=10 wt.% of the particles <=0.2 μm in size and <=3 wt.% of the particles >=20 μm in size and having a specific surface area of <=50 m2/g, obtained by baking a hydrotalcite compound of the formula (1): MgaAlb(OH)c(CO3)d at 300-900 deg.C, and (F) red phosphorus or a red phosphorus-based flame retardant. (In the general formulas (1) and (2), (a), (b), (c), (d), (x), (y) and (z) are each a positive number of >=0.1).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation which does not contain a halogen-based flame retardant and an antimony compound and has excellent flame retardancy and high-temperature storage characteristics, and a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, electronic components such as diodes, transistors, and integrated circuits are mainly sealed with an epoxy resin composition. These epoxy resin compositions contain a halogen-based flame retardant and an antimony compound in order to impart flame retardancy. However, development of an epoxy resin composition having excellent flame retardancy without using a halogen-based flame retardant and an antimony compound is demanded from the viewpoint of environment and hygiene. Further, when a semiconductor device sealed with an epoxy resin composition containing a halogen-based flame retardant and an antimony compound is stored at a high temperature, a thermally decomposed halide is liberated from these flame retardant components and the semiconductor element is bonded. Is known to corrode the semiconductor device and impair the reliability of the semiconductor device.
There is a need for an epoxy resin composition that can achieve a flame retardant grade of UL94 V-0 without using a halogen-based flame retardant and an antimony compound as the flame retardant.

[0003] As described above, the corrosion resistance of the bonding portion (bonding pad portion) of a semiconductor element after storing a semiconductor device at a high temperature (for example, 185 ° C or the like) is called high-temperature storage characteristics. As a method for improving the characteristics, a method using diantimony pentoxide (Japanese Patent Laid-Open No.
146950) and a method of combining antimony oxide with an organic phosphine (Japanese Patent Application Laid-Open No. 61-53321) have been proposed and their effects have been confirmed. On the other hand, some types of epoxy resin compositions are not satisfactory. In addition, a red phosphorus-based flame retardant has been proposed as a flame retardant. A flame retardant grade V-0 can be achieved by adding a large amount thereof, and there is no problem in high-temperature storage characteristics, but a large amount of phosphate ions as a by-product is contained. If required, moisture resistance reliability, moldability,
There is a problem that solder crack resistance is reduced. As a technique for improving the above-mentioned disadvantage, the use of a specific metal hydroxide, or the use of a composite metal hydroxide of a specific metal hydroxide and a specific metal oxide provides flame retardancy and moisture resistance reliability. Has been proposed to solve the problem (Japanese Patent Laid-Open No. 10-25 / 1998).
1486, JP-A-11-11945, etc.),
In order to exhibit sufficient flame retardancy, a large amount of addition is required, and thus there is a problem that the moldability and the solder crack resistance are reduced. In other words, maintaining flame retardancy, excellent in moldability, high-temperature storage characteristics, moisture resistance reliability and solder crack resistance,
There is a need for epoxy resin compositions that do not use halogen-based flame retardants or antimony compounds.

[0004]

DISCLOSURE OF THE INVENTION The present invention does not include a halogen-based flame retardant and an antimony compound, and has good moldability and flame retardancy.
An object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation excellent in high-temperature storage characteristics, humidity resistance, and solder crack resistance, and a semiconductor device in which a semiconductor element is encapsulated using the same.

[0005]

Means for Solving the Problems The present invention provides [1]
(A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator, (D) an inorganic filler, and (E) a hydrotalcite compound represented by the general formula (1) at 300 to 900 ° C.
A general formula having an average particle size of 0.5 to 15 μm, a particle size of 0.2 μm or less being 10% by weight or less, a particle size of 20 μm or more being 3% by weight or less, and a specific surface area of 50 m ² / g or less. An epoxy resin composition for semiconductor encapsulation comprising, as essential components, a compound represented by (2) and (F) red phosphorus or a red phosphorus-based flame retardant, and Mg _a Al _b (OH) _c (CO ₃ ) _d (1) Mg _x Al _y O _z (2) (where a, b, c, d, x, y, and z are positive numbers of 0.1 or more) [2] In general formula (1) The hydrotalcite compound represented by baking at 300 to 900 ° C. has an average particle size of 0.5 to 15 μm, a particle size of 0.2 μm or less is 10% by weight or less, and a particle size of 20 μm or more is 3% by weight. Below, specific surface area 5
The epoxy resin composition for semiconductor encapsulation according to item [1], wherein the content of the compound represented by the general formula (2) of 0 m ² / g or less is 0.05 to 2% by weight in the total epoxy resin composition. ,
[3] Red phosphorus or a red phosphorus flame retardant has an average particle size of 0.1 to 3
The epoxy resin composition for semiconductor encapsulation according to [1] or [2], which has a particle size of 0 μm and a maximum particle size of 75 μm or less,
[4] The red phosphorus-based flame retardant is obtained by coating the surface of red phosphorus with an inorganic compound and / or a curable resin.
[3] The epoxy resin composition for semiconductor encapsulation according to any one of [3] and [5], wherein the red phosphorus-based flame retardant coats the surface of red phosphorus with an inorganic compound, and further coats the surface with a curable resin. [4] The epoxy resin composition for semiconductor encapsulation according to item [4], wherein the inorganic compound used for coating the surface of red phosphorus is a metal hydroxide or metal oxide. Or the epoxy resin composition for semiconductor encapsulation according to [5],
[7] The metal hydroxide used for coating the surface of red phosphorus is a hydroxide of aluminum, magnesium, or zinc, and the metal oxide is an oxide of aluminum, magnesium, or zinc. Item 8. The epoxy resin composition for semiconductor encapsulation according to item [8], wherein the curable resin used for coating the surface of red phosphorus is a phenol resin or an epoxy resin. [9] A semiconductor element is encapsulated by using the epoxy resin composition for semiconductor encapsulation according to any one of [1] to [8]. Semiconductor device,
It is.

[0006]

BEST MODE FOR CARRYING OUT THE INVENTION The epoxy resin used in the present invention refers to all monomers, oligomers and polymers having two or more epoxy groups in one molecule, and their molecular weight and molecular structure are not particularly limited. For example, biphenyl type epoxy resin, bisphenol type epoxy resin,
Stilbene epoxy resin, phenol novolak epoxy resin, cresol novolak epoxy resin, triphenolmethane epoxy resin, alkyl-modified triphenolmethane epoxy resin, epoxy resin containing triazine nucleus, dicyclopentadiene-modified phenol epoxy resin, phenol aralkyl Type epoxy resin (having a phenylene skeleton, biphenylene skeleton and the like), a naphthol type epoxy resin and the like. These may be used alone or in combination of two or more.

The phenolic resin used in the present invention includes:
Monomers, oligomers and polymers generally having two or more phenolic hydroxyl groups in one molecule are not particularly limited in molecular weight and molecular structure. For example, phenol novolak resin, cresol novolak resin, dicyclopentadiene-modified phenol Resins, terpene-modified phenolic resins, triphenolmethane-type resins, phenolaralkyl resins (having a phenylene skeleton, biphenylene skeleton, etc.), naphthol aralkyl resins, and the like. These may be used alone or in combination of two or more. May be. Among them, phenol novolak resin, dicyclopentadiene-modified phenol resin, phenol aralkyl resin, naphthol aralkyl resin,
Terpene-modified phenolic resins and the like are preferred. The amount of these components may be 0.8 to 1 in terms of the ratio of the number of epoxy groups of all epoxy resins to the number of phenolic hydroxyl groups of all phenol resins.
3 is preferred.

As the curing accelerator used in the present invention, any one can be used as long as it promotes a curing reaction between an epoxy group and a phenolic hydroxyl group, and those generally used for a sealing material can be used. For example, 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine, 2-methylimidazole, tetraphenylphosphonium / tetraphenylborate and the like can be mentioned. More than one type may be used in combination.

As the inorganic filler used in the present invention, those generally used for a sealing material can be used. For example, fused silica, crystalline silica, talc, alumina, silicon nitride and the like can be mentioned, and these may be used alone or in combination of two or more. Of these,
It is preferable to use the fused silica having a high sphericity in its entirety or in combination with partially crushed silica. The average particle size of the inorganic filler is preferably 5 to 30 μm, and the maximum particle size is preferably 150 μm or less. Further, by mixing particles having different particle sizes, the filling amount can be increased. As the inorganic filler, a material which has been surface-treated with a silane coupling agent or the like in advance may be used. The amount of the inorganic filler is the total amount of red phosphorus or a red phosphorus-based flame retardant and the above-mentioned inorganic filler. From the balance of moldability and solder crack resistance, 60 to 95% in all epoxy resin compositions. % By weight is preferred. 60
If it is less than 95% by weight, the solder cracking resistance will decrease with an increase in moisture absorption, and if it exceeds 95% by weight, there may be problems in formability such as wire sweep and pad shift.

The general formula (2) used in the present invention is
Is a hydrotalcite compound represented by the general formula (1).
Compounds fired at 300-900 ° C.
The average particle size of the compound represented by the formula (2) is 0.5 to 15 μm.
m, particle size 0.2 μm or less, 10% by weight or less, particle size 20 μm
m is 3% by weight or less in particle size distribution and specific surface area is 50m ^Two
/ G is preferable. Used in the present invention
The compound of the general formula (2) is
It is obtained by sintering lucite compounds, but the sintering temperature is 3
If the temperature is lower than 00 ° C, CO is removed from hydrotalcite compounds.
_Two, De-H_TwoO does not advance, and when it exceeds 900 ° C, ion trapping effect
Fruitless spinel (MgAl_TwoO_Four) To produce,
The formation temperature must be 300-900 ° C.
The compound of the general formula (2) is obtained only after firing. Profit
Compound of general formula (2) captures anionic impurities
Then, it becomes a structure that absorbs anionic impurities in itself.
To inactivate anionic impurities. Therefore, the general formula
The epoxy resin composition containing the compound of (2) is
Corrosion of semiconductor circuits due to ON impurities is suppressed,
Reliability and high-temperature storage characteristics are improved. In addition, conventional hydrota
Lucite compounds, hydroxides and oxides of Bi and Sb, etc.
The compound of the general formula (2) has an anion trapping ability
The epoxy resin composition containing this is highly reliable
Improvements in stability and high-temperature storage characteristics were observed.

The compound of the formula (2) of the present invention has an average particle size of 0.5 to 15 μm, and a particle size distribution of 10% by weight or less for particles having a particle size of 0.2 μm or less and 3% by weight or less for particles having a particle size of 20 μm or more. It is necessary to adjust, and if it is out of this range, it is not preferable because an epoxy resin composition having good fluidity and excellent filling property cannot be obtained. The specific surface area is preferably 50 m ² / g or less. If it exceeds 50 m ² / g, the hygroscopicity becomes high, and the solder crack resistance is lowered, which is not preferable. In order to adjust the specific surface area, when the compound of the general formula (1) is calcined to obtain the compound of the general formula (2), the primary particles are made larger and the aggregation of the primary particles is adjusted to be smaller. 2
By forming the secondary particles, it can be reduced to 50 m ² / g or less. In the present invention, the average particle size and the particle size were measured using a laser diffraction type particle size distribution analyzer. The specific surface area was measured using a specific surface area measuring device (BET method). The compounding amount is preferably 0.05 to 2% by weight in the entire epoxy resin composition. If the content is less than 0.05% by weight, the ion trapping effect is small and the moisture resistance reliability is ineffective,
If it exceeds 2% by weight, the moisture absorption rate of the epoxy resin composition will increase, and the solder crack resistance may decrease. More preferably, it is 0.1 to 1% by weight.

The red phosphorus or red phosphorus flame retardant used in the present invention is:
It acts as a flame retardant. As the red phosphorus, fine particles made of red phosphorus obtained by directly spheroidizing yellow phosphorus and an aggregate thereof are preferable because the fluidity during molding of the epoxy resin composition is improved. The red phosphorus-based flame retardant is not particularly limited, but is preferably one in which the surface of red phosphorus is coated with an inorganic compound and / or a curable resin. When the inorganic compound and the curable resin are used in combination for coating, any of the inorganic compound layer and the curable resin layer coated on the red phosphorus may be either inside or outside, or the inorganic compound and the curable resin. May be mixed and used for coating. In particular, it is preferable to use a material obtained by coating the surface of red phosphorus with an inorganic compound and then further coating the surface with a curable resin, because phosphate ions and phosphite ions that elute can be suppressed.

The inorganic compound used for the coating is not particularly limited, and examples thereof include metal hydroxides, metal oxides, metal nitrides, metal salts with inorganic or organic acids, and the like. In particular, a metal hydroxide or a metal oxide having an effect of suppressing hydrolysis of red phosphorus is preferable, and a hydroxide or an oxide of aluminum, magnesium, or zinc is more preferable. One of these inorganic compounds may be used alone, or two or more thereof may be used in combination.

The curable resin used for the coating is not particularly limited. For example, a phenol resin, an epoxy resin, a xylene / formaldehyde resin, a ketone resin
Formaldehyde resin, urea resin, melamine resin, aniline resin, alkyd resin, unsaturated polyester resin and the like, phenolic resin, especially those that do not decrease the fluidity and curability during molding of the low hygroscopicity and epoxy resin composition, Epoxy resins are preferred. These curable resins may be used alone or in combination of two or more.
The method for curing the curable resin may be normal temperature or heating, and is not particularly limited.

That is, as the red phosphorus-based flame retardant of the present invention, red phosphorus whose surface is coated with aluminum hydroxide and further coated with a phenol resin or an epoxy resin is more preferable. The phenolic resin used for coating is not particularly limited, but refers to all monomers, oligomers and polymers having two or more phenolic hydroxyl groups in one molecule, and includes, for example, a novolak type such as a phenol novolak resin and a cresol novolak resin. Resins, resol resins, etc., may be used, and these may be used alone or in combination of two or more. The epoxy resin used for coating is not particularly limited, but refers to all monomers, oligomers, and polymers having two or more epoxy groups in one molecule, and includes, for example, biphenyl type epoxy resin, bisphenol type epoxy resin, and novolak type Epoxy resins and the like can be mentioned, and these may be used alone or in combination of two or more. There is no restriction on the coating method, but for example, from the viewpoint of coating uniformity, red phosphorus is coated by reducing aluminum sulfate, aluminum nitrate, etc. in the liquid phase to change to aluminum hydroxide. Further, a method of using an acid in a resole resin solution, coating with a generated phenol resin, and drying is used.

The content of red phosphorus in the red phosphorus flame retardant is as follows:
90-96% by weight is preferred. If it is less than 90% by weight, the coating layer becomes thick and its effect as a flame retardant decreases, and if it exceeds 96% by weight, the coating layer becomes thin and undergoes a hydrolysis reaction in the presence of moisture, so that phosphoric acid is easily converted from red phosphorus. Since ions and phosphite ions are generated, there is a possibility that a problem may occur in terms of humidity resistance reliability. As the red phosphorus or the red phosphorus-based flame retardant, those having an average particle diameter of 0.1 to 30 μm and a maximum particle diameter of 75 μm or less are preferable. If the average particle size is less than 0.1 μm, aggregation or the like occurs,
If it exceeds 30 μm, the dispersibility may decrease. Further, as a measure against insulation failure, the one having a maximum particle size of 75 μm or less is preferable. If it exceeds 75 μm, problems such as poor insulation may occur. The compounding amount of red phosphorus or a red phosphorus-based flame retardant is preferably 0.05 to 2% by weight in the total epoxy resin composition. If it is less than 0.05% by weight, the flame retardancy is insufficient, and if it exceeds 2% by weight, the moisture resistance reliability may be significantly reduced.

The fired product of hydrotalcite, red phosphorus or a red phosphorus-based flame retardant has the property of imparting flame retardancy even when used alone. However, in order to exhibit sufficient flame retardancy, a large amount of the compound is required. Required. However, if it is blended in a large amount, the moldability and strength tend to decrease, and the moisture absorption rate tends to increase, and the solder crack resistance decreases. In order to prevent these physical properties from deteriorating, it is necessary to reduce the compounding amount as much as possible. The present inventor has found that by using a fired product of hydrotalcite of the present invention and red phosphorus or a red phosphorus-based flame retardant in combination, flame retardancy is further improved as a synergistic effect, and the amount of the compound can be reduced. . Further, it was confirmed that the moisture resistance reliability and high-temperature storage characteristics were significantly improved by capturing the phosphorous ions and the like produced as a by-product from red phosphorus or a red phosphorus-based flame retardant by the fired product of hydrotalcite. That is, it was confirmed that by using both of them, their abilities complement each other, and high synergistic effects such as high flame retardancy and reliability, and also good moldability can be achieved.

The epoxy resin composition of the present invention comprises (A)
In addition to the component (F), a flame retardant such as a brominated epoxy resin or antimony trioxide may be contained as necessary, but the stability of the electrical characteristics of the semiconductor device at a high temperature of 150 to 200 ° C. For applications required, the content of bromine atoms and antimony atoms is preferably less than 0.1% by weight in the total epoxy resin composition, and more preferably not completely contained. If either the bromine atom or the antimony atom is 0.1% by weight or more, the resistance value of the semiconductor device will increase with time when left at high temperatures, and eventually the failure of the gold wire of the semiconductor element to break will occur. Can occur. Also, from the viewpoint of environmental protection, it is desirable that the content of each of the bromine atom and the antimony atom is less than 0.1% by weight and that they are not contained as much as possible. The epoxy resin composition of the present invention contains the components (A) to (F) as essential components,
In addition, various additives such as a silane coupling agent, a coloring agent such as carbon black, a release agent such as a natural wax and a synthetic wax, and a low-stress additive such as silicone oil and rubber are appropriately compounded as necessary. No problem.
Further, the epoxy resin composition of the present invention is prepared by sufficiently mixing the components (A) to (F) and other additives and the like with a mixer or the like, followed by melt-kneading with a hot roll or a kneader. , After cooling and pulverized. Various electronic components such as semiconductor elements are encapsulated using the epoxy resin composition of the present invention, and semiconductor devices are manufactured by curing and molding using conventional molding methods such as transfer molding, compression molding, and injection molding. do it.

[0019]

EXAMPLES Examples of the present invention will be shown below, but the present invention is not limited to these examples. The mixing ratio is by weight. In addition, the epoxy resin used in the Examples and Comparative Examples,
Abbreviations and properties of the phenolic resin and the red phosphorus flame retardant are summarized below. Epoxy resin (E-1): biphenyl type epoxy resin (melting point 105 ° C., epoxy equivalent 190), epoxy resin (E-2): dicyclopentadiene modified phenol type epoxy resin (softening point 70 ° C., epoxy equivalent 265), phenol Resin (H-1): phenol aralkyl resin (softening point 70 ° C., hydroxyl equivalent 165), phenolic resin (H-2): phenol novolak resin (softening point 90 ° C., hydroxyl equivalent 104), red phosphorus flame retardant 1: The surface of red phosphorus converted directly from yellow phosphorus into a sphere is coated with aluminum hydroxide, and then the surface is further coated with a phenol resin.
% By weight, average particle size 24 μm, maximum particle size 150 μm. Red Phosphorus Flame Retardant 2: A substance obtained by coating the surface of ground red phosphorus with aluminum hydroxide and then further coating the surface with an epoxy resin. The content of red phosphorus is 94% by weight, and the average particle diameter is 21 μm.
m, maximum particle size 150 μm. Red Phosphorus Flame Retardant 3: The surface of red phosphorus converted directly from yellow phosphorus into spheres is coated with magnesium hydroxide, and then the surface is further coated with a phenolic resin.
% By weight, average particle size 28 μm, maximum particle size 75 μm.

Example 1 77 parts by weight of epoxy resin (E-1) 68 parts by weight of phenol resin (H-1) 2 parts by weight of 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU) 825 parts by weight of fused spherical silica Mg _0.7 Al _0.3 O _1.15 (calcined at 400 ° C., spinel generation amount 0%. Average particle size 3 μm, particle size 0.2 μm or less 3% by weight, particle size 20 μm or more 0% by weight, Specific surface area 15 m ² / g; hereinafter referred to as M-1) 10 parts by weight Red phosphorus-based flame retardant 1 5 parts by weight Epoxysilane coupling agent 5 parts by weight Carbon black 3 parts by weight Carnauba wax 5 parts by weight at room temperature And mixed by using
Roll kneading was performed at 0 ° C., followed by cooling and pulverization to obtain an epoxy resin composition. The obtained epoxy resin composition was evaluated by the following method. Table 1 shows the results.

Evaluation method Spiral flow: Measurement was performed using a mold for measuring spiral flow according to EMMI-1-66 at a mold temperature of 175 ° C., a pressure of 6.9 MPa and a curing time of 120 seconds. The unit is cm. Curability: Using a JSR Curastometer IVPS manufactured by Orientec Co., Ltd., the diameter of the die was 35 mm, the amplitude angle was 1 °, the molding temperature was 175 ° C., and the torque value after 90 seconds from the start of molding was measured. The higher the value, the faster the curing. The unit is N · m. Flame retardancy: A test piece (127 mm × 12.7 mm × 3.2 mm) was molded using a low pressure transfer molding machine at a molding temperature of 175 ° C., a pressure of 6.9 MPa, and a curing time of 120 seconds. After treatment for 8 hours, ΔF and Fmax were measured according to the UL-94 vertical method,
Flame retardancy was determined. High-temperature storage characteristics: Using a low-pressure transfer molding machine, a molding temperature of 175 ° C., a pressure of 6.9 MPa, and a curing time of 120 seconds, 16 pDIP (chip size: 3.0 mm × 3.5 m)
m) was molded and treated as an after-bake at 175 ° C. for 8 hours, followed by a high-temperature storage test (185 ° C., 1000 hours)
The package in which the electric resistance between the wirings increased by 20% from the initial value was determined to be defective. The number of defective packages in the 15 packages is shown. Moisture resistance reliability: 16pDIP (chip size 3.0mm x 3.5mm) using a low pressure transfer molding machine at a molding temperature of 175 ° C, a pressure of 6.9MPa, and a curing time of 120 seconds.
And then treated at 175 ° C. for 8 hours as an after-bake, and then subjected to 125 ° C., 20 ° C. while applying a bias of 20V.
A 0 hour treatment was performed. The conduction between the wirings was confirmed, and the state where the conduction was lost was determined to be defective. The number of defective packages in the 15 packages is shown.

Examples 2 to 6, Comparative Examples 1 to 4 Epoxy resin compositions were obtained in the same manner as in Example 1 according to the formulations in Table 1, and evaluated in the same manner as in Example 1. Table 1 shows the results. Brominated bisphenol A used in Comparative Example 1
The epoxy equivalent of the type epoxy resin is 365.

[Table 1]

[0023]

According to the present invention, an epoxy resin composition for encapsulating a semiconductor which does not contain a halogen-based flame retardant or an antimony compound and has excellent moldability can be obtained. Excellent storage characteristics, humidity resistance, and solder crack resistance.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4J002 CC03X CC04X CC05X CC07X CD03W CD05W CD06W DA059 DE288 DJ017 EU116 EW016 EW126 EY016 FB079 FB089 FB097 FD017 FD139 FD14X FD156 GQ01 GQ05 4J036 AA01 DC01 AF02 DD09 FA04 FA05 FB07 JA07 4M109 AA01 CA21 EA02 EB03 EB07

Claims (9)

[Claims] 1. An epoxy resin, (B) a phenolic resin, (C) a curing accelerator, (D) an inorganic filler, and (E) a hydrotalcite compound represented by the general formula (1).
The average particle size obtained by baking at 00 to 900 ° C. is 0.5
１５15 μm, particle size 0.2 μm or less 10% by weight or less, particle size 20 μm or more 3% by weight or less, specific surface area 50 m ² / g
A compound represented by the following general formula (2), and (F)
An epoxy resin composition for semiconductor encapsulation, comprising red phosphorus or a red phosphorus-based flame retardant as an essential component. Mg _a Al _b (OH) _c (CO ₃ ) _d (1) Mg _x Al _y O _z (2) (where a, b, c, d, x, y, and z are positive numbers of 0.1 or more. ) 2. A hydrotalcite compound represented by the general formula (1) obtained by firing at 300 to 900 ° C.
An average particle size of 0.5 to 15 μm, and a particle size of 0.2 μm or less is 1
0% by weight or less, a compound represented by the general formula (2) having a particle size of 20 µm or more and 3% by weight or less and a specific surface area of 50 m ² / g or less is contained in the total epoxy resin composition in an amount of 0.05 to 2% by weight.
The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein 3. The method according to claim 1, wherein the red phosphorus or the red phosphorus-based flame retardant has an average particle diameter of 0.
The epoxy resin composition for semiconductor encapsulation according to claim 1 or 2, having a particle size of 1 to 30 µm and a maximum particle size of 75 µm or less. 4. The red phosphorus flame retardant wherein the surface of red phosphorus is coated with an inorganic compound and / or a curable resin.
4. The epoxy resin composition for semiconductor encapsulation according to any one of items 1 to 3. 5. The epoxy resin composition for semiconductor encapsulation according to claim 4, wherein the red phosphorus flame retardant is obtained by coating the surface of red phosphorus with an inorganic compound and then coating the surface with a curable resin. . 6. The inorganic compound used for coating the surface of red phosphorus is a metal hydroxide or a metal oxide.
The epoxy resin composition for semiconductor encapsulation according to the above. 7. The metal hydroxide used for coating the surface of red phosphorus is a hydroxide of aluminum, magnesium or zinc, and the metal oxide is an oxide of aluminum, magnesium or zinc. 7. The epoxy resin composition for semiconductor encapsulation according to 6. 8. The curable resin used for coating the surface of red phosphorus is a phenol resin or an epoxy resin.
8. The epoxy resin composition for semiconductor encapsulation according to any one of 7. 9. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition for semiconductor encapsulation according to claim 1.