JP2002050589A - Method and device for stretching and separating semiconductor wafer - Google Patents
Method and device for stretching and separating semiconductor waferInfo
- Publication number
- JP2002050589A JP2002050589A JP2000235602A JP2000235602A JP2002050589A JP 2002050589 A JP2002050589 A JP 2002050589A JP 2000235602 A JP2000235602 A JP 2000235602A JP 2000235602 A JP2000235602 A JP 2000235602A JP 2002050589 A JP2002050589 A JP 2002050589A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- semiconductor
- stretching
- stretched sheet
- separating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0052—Means for supporting or holding work during breaking
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、延伸シートに貼り
付けられた半導体ウェーハを、へき開ラインに沿って複
数の半導体片に分離する半導体ウェーハの延伸分離方法
及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer stretching separation method and apparatus for separating a semiconductor wafer attached to a stretched sheet into a plurality of semiconductor pieces along a cleavage line.
【0002】[0002]
【従来の技術】図5は、従来の半導体ウェーハの延伸分
離工程を説明する断面図である。図5Aにおいて、粘着
樹脂で成る延伸シート2の半導体ウェーハ貼付面2a上
には半導体ウェーハ1が貼り付けられる。半導体ウェー
ハ1には、ダイヤモンドカッターなどで引っ掻いて、へ
き開ライン3が形成されている。2. Description of the Related Art FIG. 5 is a sectional view for explaining a conventional semiconductor wafer stretching / separating step. In FIG. 5A, the semiconductor wafer 1 is attached on the semiconductor wafer attachment surface 2a of the stretched sheet 2 made of an adhesive resin. A cleavage line 3 is formed in the semiconductor wafer 1 by being scratched with a diamond cutter or the like.
【0003】延伸シート2を、例えば半導体ウェーハ貼
付面2aの外周側部分をクランプ部材などで引っ張っ
て、矢印で示す水平方向に延伸させると、図5Bに示す
ように、半導体ウェーハ1は、結晶がある一定の方向に
容易に割れて平面をつくる性質(へき開性)により、へ
き開ライン3に沿って複数の半導体片1aに分離する。When the stretched sheet 2 is stretched in the horizontal direction indicated by an arrow, for example, by pulling the outer peripheral portion of the semiconductor wafer attaching surface 2a with a clamp member or the like, as shown in FIG. 5B, the semiconductor wafer 1 has crystals. Due to the property of easily cracking in a certain direction to form a plane (cleavability), the semiconductor chip 1a is separated along the cleavage line 3 into a plurality of semiconductor pieces 1a.
【0004】また、特公平7−79095号公報では、
図6に示すように、外周側をリング状のフレーム5で固
定されたテープ6に半導体ウェーハ7が貼り付けられて
おり、テープ6の下方には押し上げ部材8が上下及び左
右に移動可能に配設されている。半導体ウェーハ7には
紙面を貫く方向に沿って延びるブレークライン11a〜
11eが形成されており、押し上げ部材8もその方向に
沿って延びており、その先端には複数のボール9が並ん
で取り付けられている。In Japanese Patent Publication No. 7-79095,
As shown in FIG. 6, a semiconductor wafer 7 is attached to a tape 6 whose outer peripheral side is fixed by a ring-shaped frame 5, and a push-up member 8 is disposed below the tape 6 so as to be movable up and down and left and right. Has been established. The semiconductor wafer 7 has break lines 11a to 11a extending along a direction penetrating the paper surface.
11e, the push-up member 8 also extends along that direction, and a plurality of balls 9 are attached to the tip of the push-up member 8 side by side.
【0005】押し上げ部材8は、先端のボール9の並び
方向と、半導体ウェーハ7のブレークライン11aの延
びる方向とを合わせて、テープ6の下方より押し上げら
れる。この押し上げ移動によりボール9はテープ6の下
面と接触し、テープ6に貼り付けられている半導体ウェ
ーハ7を押し上げ、この接触点を支点にして曲げ応力を
発生させブレークライン11aに沿って半導体片7aが
分離される。そして、次のブレークライン11bへと、
押し上げ部材8はカム10上を移動されブレークライン
11bについて同様なブレーク動作が行われる。以後、
連続して他のブレークラインについても同様に行われて
いく。The push-up member 8 is pushed up from below the tape 6 so that the direction in which the balls 9 at the tip end are aligned and the direction in which the break lines 11a of the semiconductor wafer 7 extend are aligned. The ball 9 comes into contact with the lower surface of the tape 6 by this upward movement, pushes up the semiconductor wafer 7 attached to the tape 6, generates bending stress with this contact point as a fulcrum, and generates the semiconductor piece 7a along the break line 11a. Are separated. Then, to the next break line 11b,
The push-up member 8 is moved on the cam 10 and the same break operation is performed on the break line 11b. Since then
The same applies to other breaklines in succession.
【0006】[0006]
【発明が解決しようとする課題】上述した図5に示す従
来例では、延伸シート2の延伸率の位置的な違いから半
導体片1aへの分離ができない領域が発生する場合があ
る。特に中央部では延伸率が外周側に比べて小さく分離
不良1bが生じやすい。分離工程後、分離された半導体
片は画像処理によって1つずつ見極められ、ピックアッ
プ(吸着)されるが、分離できなかった複数個(図示で
は2個)分のチップがあると、そのときにエラーとなり
設備稼働率の低下や歩留低下を引き起こす。In the conventional example shown in FIG. 5 described above, there are cases where a region cannot be separated into the semiconductor pieces 1a due to a difference in the stretching ratio of the stretched sheet 2. In particular, in the central part, the stretching ratio is smaller than that on the outer peripheral side, and poor separation 1b is likely to occur. After the separation process, the separated semiconductor pieces are identified one by one by image processing and picked up (adsorbed). However, if there are a plurality of (two in the figure) chips that could not be separated, an error occurs at that time. This causes a reduction in equipment operation rate and a decrease in yield.
【0007】また、特公平7−79095号公報(図
6)では、その都度、ボール9の並び方向をブレークラ
イン11a〜11eの方向に位置合わせして、そしてあ
る特定のブレークライン1本に関してのみの2分割を、
ブレークラインの本数分、1回ずつ行っていかなければ
ならず作業性が悪い。In Japanese Patent Publication No. 7-79095 (FIG. 6), the arrangement direction of the balls 9 is aligned with the direction of the break lines 11a to 11e each time, and only one specific break line is set. Divided into two
It is necessary to go once for each break line, and the workability is poor.
【0008】本発明は上述の問題に鑑みてなされ、手間
と時間をかけずに効率よく確実に全てのへき開ラインに
ついて半導体片へと分離できる半導体ウェーハの延伸分
離方法及び装置を提供することを課題とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a method and an apparatus for stretching and separating a semiconductor wafer, which can efficiently and surely separate all the cleavage lines into semiconductor pieces without any trouble and time. And
【0009】[0009]
【課題を解決するための手段】以上の課題を解決するに
あたり、本発明の半導体ウェーハの延伸分離方法では、
延伸シートを、半導体ウェーハ貼付面より外周側の部分
で保持し、半導体ウェーハ貼付面の裏面側から押圧力を
与えてこの半導体ウェーハ貼付面全面を曲面状に膨出さ
せて延伸させ、半導体ウェーハ貼付面に貼り付けられた
半導体ウェーハをへき開ラインに沿って複数の半導体片
に分離するようにしている。In order to solve the above problems, the method for stretching and separating a semiconductor wafer according to the present invention comprises:
The stretched sheet is held at a portion on the outer peripheral side from the semiconductor wafer sticking surface, and a pressing force is applied from the back side of the semiconductor wafer sticking surface to expand the entire surface of the semiconductor wafer sticking surface into a curved surface and stretched to attach the semiconductor wafer. The semiconductor wafer attached to the surface is separated into a plurality of semiconductor pieces along a cleavage line.
【0010】また、本発明の半導体ウェーハの延伸分離
装置は、へき開ラインが形成された半導体ウェーハが貼
り付けられる平らな半導体ウェーハ貼付面を有する延伸
シートと、この延伸シートを、半導体ウェーハ貼付面よ
り外周側の部分で保持する保持手段と、この保持手段で
保持された延伸シートの半導体ウェーハ貼付面の裏面側
から押圧力を与えて、この半導体ウェーハ貼付面全面を
曲面状に膨出させて延伸させる押圧手段とを備え、半導
体ウェーハを貼り付けた半導体ウェーハ貼付面の全面が
曲面状に膨出して延伸されることで、半導体ウェーハは
へき開ラインに沿って複数の半導体片に分離される。[0010] Further, the semiconductor wafer stretching / separating apparatus of the present invention comprises a stretched sheet having a flat semiconductor wafer attaching surface on which a semiconductor wafer having a cleavage line formed thereon is attached, and the stretched sheet being separated from the semiconductor wafer attaching surface. Holding means for holding the outer peripheral portion, and pressing force from the back side of the semiconductor wafer attachment surface of the stretched sheet held by the holding means, stretches the entire surface of the semiconductor wafer attachment surface in a curved shape and stretches. The semiconductor wafer is separated into a plurality of semiconductor pieces along a cleavage line by swelling and extending the entire surface of the semiconductor wafer attachment surface on which the semiconductor wafer is attached, in a curved shape.
【0011】すなわち、一回の押圧動作で、半導体ウェ
ーハ貼付面上の半導体ウェーハに形成された全てのへき
開ラインについて、へき開に必要な応力を均一に与える
べく半導体ウェーハ貼付面全面を曲面状に膨らませて延
伸させ、分離不良を生じないようにしている。That is, with one pressing operation, the entire surface of the semiconductor wafer to which the semiconductor wafer is attached is inflated in a curved shape so as to uniformly apply the stress required for cleavage to all the cleavage lines formed on the semiconductor wafer on the semiconductor wafer attachment surface. And stretched to prevent poor separation.
【0012】[0012]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【0013】図1は、本発明の実施の形態による延伸分
離装置20の断面図を示し、図1Aは延伸分離前、図1
Bは延伸分離された状態を示す。図2は、分離前におけ
る平面図である。FIG. 1 is a sectional view of a stretching / separating apparatus 20 according to an embodiment of the present invention, and FIG.
B indicates a state where the sheet is stretched and separated. FIG. 2 is a plan view before separation.
【0014】粘着性の樹脂などで成る延伸シート22の
平らな中央部は、半導体ウェーハ21が貼り付けられる
半導体ウェーハ貼付面22aを形成している。この外周
側の部分は中空孔24aを有する支持台24と支持リン
グ23との間に挟まれ固定され、その固定方法としては
例えばボルト25を支持リング23及び延伸シート22
を貫いて支持台24に螺着させている。ボルト25を使
わずに、クランプ部材などで延伸シート22の外周部を
支持リング23と支持台24との間で狭圧したり、延伸
シート22の外周部を直接、支持台24に接着して固定
させてもよい。A flat central portion of the stretched sheet 22 made of an adhesive resin or the like forms a semiconductor wafer attaching surface 22a to which the semiconductor wafer 21 is attached. This outer peripheral portion is sandwiched and fixed between a support base 24 having a hollow hole 24a and a support ring 23. As a fixing method, for example, a bolt 25 is attached to the support ring 23 and the stretched sheet 22.
And is screwed to the support 24. Instead of using the bolt 25, the outer peripheral portion of the stretched sheet 22 is narrowed between the support ring 23 and the support base 24 by a clamp member or the like, or the outer peripheral portion of the stretched sheet 22 is directly adhered to the support base 24 and fixed. May be.
【0015】延伸シート22の半導体ウェーハ貼付面2
2aには、半導体ウェーハ21が貼り付けられる。半導
体ウェーハ21は、例えばシリコンやガリウムヒ素(G
aAs)で成り、円板形状の半導体ウェーハから切り出
された長尺板(バー)状である。そして、図2に示すよ
うに複数本、半導体ウェーハ貼付面22aに貼り付けら
れている。図2では、一列に並んでいるが、半導体ウェ
ーハ21の長さによっては、2列、3列、・・・という
ように多列に並べてもよい。Semiconductor wafer sticking surface 2 of stretched sheet 22
The semiconductor wafer 21 is attached to 2a. The semiconductor wafer 21 is made of, for example, silicon or gallium arsenide (G
aAs), which is a long plate (bar) cut out from a disk-shaped semiconductor wafer. Then, as shown in FIG. 2, a plurality of semiconductor chips are attached to the semiconductor wafer attachment surface 22a. In FIG. 2, the semiconductor wafers 21 are arranged in one row, but may be arranged in multiple rows such as two rows, three rows,... Depending on the length of the semiconductor wafer 21.
【0016】半導体ウェーハ21の短手方向と平行に、
複数本(図示では1つの半導体ウェーハ21について4
本)のへき開ライン26が、ダイヤモンドカッターなど
で、予め、前工程で形成されている。このへき開ライン
26は、半導体ウェーハ21の上部のみに形成されてい
るが、下方まで完全な分割線として形成してもよい。In parallel with the lateral direction of the semiconductor wafer 21,
Plural pieces (4 in the figure for one semiconductor wafer 21)
The cleavage line 26 of the present embodiment is formed in advance in a previous step using a diamond cutter or the like. Although the cleavage line 26 is formed only at the upper part of the semiconductor wafer 21, it may be formed as a complete dividing line to the lower part.
【0017】半導体ウェーハ貼付面22aの裏面側で、
支持台24の中空孔24a内には押圧体27が上下方向
へ移動可能に配設されている。押圧体27の、半導体ウ
ェーハ貼付面22aの裏面と対向する上面は球面となっ
ている。押圧体27は、モータなどを駆動源とする移動
手段により上下動される。あるいは、手動で上下動する
ようにしてもよい。On the back side of the semiconductor wafer attaching surface 22a,
A pressing body 27 is disposed in the hollow hole 24a of the support base 24 so as to be movable in the vertical direction. The upper surface of the pressing body 27 facing the back surface of the semiconductor wafer attaching surface 22a is spherical. The pressing body 27 is moved up and down by moving means using a motor or the like as a driving source. Or you may make it move up and down manually.
【0018】以上のように構成される延伸分離装置20
において、次にその作用について説明する。The stretching / separating apparatus 20 constructed as described above
Next, the operation will be described.
【0019】先ず、図1Aに示すように、延伸シート2
2の半導体ウェーハ貼付面22aに、へき開ライン26
が形成された半導体ウェーハ21が貼り付けられ、この
半導体ウェーハ貼付面22aより外周側の部分は支持リ
ング23及びボルト25で支持台24に固定される。First, as shown in FIG.
2 and the cleavage line 26
The semiconductor wafer 21 on which is formed is adhered, and a portion on the outer peripheral side from the semiconductor wafer attaching surface 22a is fixed to a support base 24 by a support ring 23 and bolts 25.
【0020】その状態で、押圧体27が上昇して、この
先端の球面が半導体ウェーハ貼付面22aの裏面に接触
し、更に上昇して半導体ウェーハ貼付面22aを突き上
げ、半導体ウェーハ貼付面22a全面を球面状に膨出さ
せる(図1B)。これにより、各へき開ライン26全て
に対して、へき開させるべき応力が均等に作用し、分離
不良を生じることなく、複数の半導体片(半導体チッ
プ)21aに分離される。また、1度の突き上げ(押
圧)で全てのへき開ラインについて応力を作用させて効
率よく分離することができる。そして、各半導体片21
a間のピッチがほぼ等しくされて分離された状態となる
と押圧体27の突き上げは停止され、分離の完了とな
る。In this state, the pressing body 27 rises, and the spherical surface at the tip comes into contact with the back surface of the semiconductor wafer attaching surface 22a, and further rises to push up the semiconductor wafer attaching surface 22a, thereby covering the entire surface of the semiconductor wafer attaching surface 22a. Inflate into a spherical shape (FIG. 1B). As a result, the stress to be cleaved acts uniformly on all of the cleavage lines 26, and is separated into a plurality of semiconductor pieces (semiconductor chips) 21a without causing separation failure. In addition, a single push-up (pressing) applies a stress to all the cleavage lines to enable efficient separation. And each semiconductor piece 21
When the pitches a are substantially equalized and separated, the pushing of the pressing body 27 is stopped, and the separation is completed.
【0021】なお、押圧体27の突き上げ量z(図1B
に示す)と、球面の曲率半径rは、半導体ウェーハ21
の厚さをt(図1Aに示す)、半導体ウェーハ21の短
手方向の長さをL(図2に示す)とすると、r≦L×5
00、z≧t×5、によって決められ、半導体ウェーハ
21のサイズに応じて安定した確実な半導体片21aへ
の分離が行えるようにしている。上記関係式における定
数は、半導体ウェーハサイズが変動しても、分離が良好
に行われる突き上げ量z及び球面の曲率半径rとなるべ
く、実験や計算により見込んで求められた値である。The pushing amount z of the pressing body 27 (FIG. 1B)
And the radius of curvature r of the spherical surface is
If the thickness of the semiconductor wafer 21 is represented by t (shown in FIG. 1A) and the length of the semiconductor wafer 21 in the lateral direction is represented by L (shown in FIG. 2), r ≦ L × 5
00, z ≧ t × 5, so that the semiconductor wafer 21 can be stably and reliably separated into the semiconductor pieces 21 a according to the size of the semiconductor wafer 21. The constants in the above relational expressions are values obtained by experiments and calculations in order to obtain the push-up amount z and the radius of curvature r of the spherical surface that allow good separation even if the semiconductor wafer size varies.
【0022】以上、本発明の実施の形態について説明し
たが、勿論、本発明はこれに限定されることなく、本発
明の技術的思想に基づいて種々の変形が可能である。Although the embodiment of the present invention has been described above, the present invention is, of course, not limited to this, and various modifications can be made based on the technical idea of the present invention.
【0023】上記実施の形態では、図2に示すように、
長尺板状の半導体ウェーハ21の分離に適用したが、図
3に示すように、円板状の半導体ウェーハ28から縦横
格子状に形成されたへき開ライン28a、28bに沿っ
て半導体片28cを分離するようにしてもよい。また、
図4に示すように、円板状の半導体ウェーハ29から長
尺板状の半導体片29bを分離する場合には、球面で押
圧力を与えると、へき開ライン29a以外の部分で折れ
てしまうおそれがあるので、円柱側面を有する押圧体を
用い、その円柱側面の軸線方向をへき開ライン29aと
平行にして押圧する。このようにすれば、図4において
縦方向にのみ延伸する力が与えられるので、折れを生じ
ることなく長尺板状の半導体片29bを分離することが
できる。もちろん、上記実施の形態においても押圧体2
7の上面は円柱側面としてもよい。In the above embodiment, as shown in FIG.
Although applied to the separation of the long plate-shaped semiconductor wafer 21, as shown in FIG. 3, the semiconductor piece 28c is separated from the disk-shaped semiconductor wafer 28 along cleavage lines 28a and 28b formed in a vertical and horizontal lattice. You may make it. Also,
As shown in FIG. 4, when separating a long plate-shaped semiconductor piece 29 b from a disk-shaped semiconductor wafer 29, if a pressing force is applied on a spherical surface, there is a possibility that the semiconductor chip 29 may be broken at a portion other than the cleavage line 29 a. Therefore, a pressing body having a cylindrical side surface is used, and pressing is performed with the axial direction of the cylindrical side surface being parallel to the cleavage line 29a. In this way, a force that extends only in the vertical direction in FIG. 4 is applied, so that the long plate-shaped semiconductor piece 29b can be separated without breaking. Of course, also in the above embodiment, the pressing body 2
The upper surface of 7 may be a cylindrical side surface.
【0024】また、上記実施の形態では、半導体ウェー
ハ21はシリコンやガリウムヒ素で成るとしたが、他の
材質、例えばへき開性が低く従来の図5に示す方法では
分離不良が発生しやすかったAl2O3でもよく、この
ようなへき開性が低い材質の半導体ウェーハに対しても
本発明では確実な半導体片(チップ)への分離を可能と
する。In the above embodiment, the semiconductor wafer 21 is made of silicon or gallium arsenide. However, other materials, for example, Al2O3 which has low cleavage and is liable to cause separation failure in the conventional method shown in FIG. However, the present invention enables reliable separation of semiconductor pieces (chips) even from a semiconductor wafer having such a low cleavage property.
【0025】また、上記実施の形態では、押圧体27
を、支持台24に固定された延伸シート22に対して移
動させたが、押圧体27を固定させておいて、延伸シー
ト22をその外周部でクランプ部材などで把持して、固
定させた押圧体27に対して移動させてもよい。もちろ
ん、延伸シート22と押圧体27の両方を移動させても
よく、すなわち、半導体ウェーハ貼付面22aの裏面に
押圧体27が押圧して移動可能となるように延伸シート
22と押圧体27が相対的に移動できるようにすればよ
い。In the above embodiment, the pressing member 27
Is moved with respect to the stretched sheet 22 fixed to the support table 24, but the pressing body 27 is fixed, and the stretched sheet 22 is gripped by a clamp member or the like at the outer periphery thereof, and the fixed pressing is performed. You may move with respect to the body 27. Of course, both the stretched sheet 22 and the pressing body 27 may be moved, that is, the stretched sheet 22 and the pressing body 27 are relatively moved so that the pressing body 27 can be moved by pressing the back surface of the semiconductor wafer attaching surface 22a. What is necessary is just to be able to move temporarily.
【0026】また、半導体ウェーハ貼付面22aの裏面
の押圧に押圧体27を用いるのではなく、空気圧や油圧
などの流体圧を与えて、半導体ウェーハ貼付面22a全
面を曲面状に膨出させて延伸するようにしてもよい。Also, instead of using the pressing body 27 to press the back surface of the semiconductor wafer attachment surface 22a, a fluid pressure such as air pressure or hydraulic pressure is applied to expand the entire surface of the semiconductor wafer attachment surface 22a into a curved surface and stretch it. You may make it.
【0027】[0027]
【発明の効果】本発明の請求項1または請求項2によれ
ば、半導体片への分離不良を低減させ、歩留と設備稼働
率を向上できる。また、1度により多くのへき開ライン
について分離を行うことができ作業効率も向上させるこ
とができ量産に有効である。According to the first or second aspect of the present invention, it is possible to reduce defective separation into semiconductor pieces and to improve the yield and equipment operation rate. Further, separation can be performed for more cleavage lines at one time, and the working efficiency can be improved, which is effective for mass production.
【0028】また、請求項4によれば、ウェーハサイズ
に合わせて最適な、分離させるための応力を与えること
ができる。According to the fourth aspect, it is possible to apply an optimal stress for separation in accordance with the wafer size.
【0029】また、請求項5によれば、折れを発生させ
ることなく、長尺板状の半導体片を分離できる。According to the fifth aspect, a long plate-shaped semiconductor piece can be separated without causing breakage.
【図1】本発明の実施の形態による延伸分離装置の断面
図であり、Aは延伸分離前、Bは延伸分離された状態を
示す。FIG. 1 is a cross-sectional view of a stretching separation apparatus according to an embodiment of the present invention, wherein A shows a state before stretching and separation, and B shows a state after stretching and separation.
【図2】同平面図である。FIG. 2 is a plan view of the same.
【図3】格子状にへき開ラインが形成された円板状半導
体ウェーハの平面図である。FIG. 3 is a plan view of a disc-shaped semiconductor wafer on which cleavage lines are formed in a lattice shape.
【図4】一方向のみに、平行なへき開ラインが形成され
た円板状半導体ウェーハの平面図である。FIG. 4 is a plan view of a disc-shaped semiconductor wafer in which parallel cleavage lines are formed only in one direction.
【図5】従来例の延伸分離作用を説明する図であり、A
は分離前、Bは分離された状態を示す。FIG. 5 is a view for explaining a stretching separation action of a conventional example.
Indicates a state before separation, and B indicates a separated state.
【図6】他従来例による半導体ウェーハの分離を示す図
である。FIG. 6 is a view showing separation of a semiconductor wafer according to another conventional example.
20……延伸分離装置、21……半導体ウェーハ、21
a……半導体片、22……延伸シート、22a……半導
体ウェーハ貼付面、26……へき開ライン、27……押
圧体。20: Stretch separation device, 21: Semiconductor wafer, 21
a ... semiconductor piece, 22 ... stretched sheet, 22a ... semiconductor wafer attachment surface, 26 ... cleavage line, 27 ... pressing body.
Claims (5)
ェーハ貼付面に、へき開ラインが形成された半導体ウェ
ーハを貼り付け、前記延伸シートを延伸させて前記半導
体ウェーハを前記へき開ラインに沿って複数の半導体片
に分離する半導体ウェーハの延伸分離方法において、 前記延伸シートを、前記半導体ウェーハ貼付面より外周
側の部分で保持し、 前記半導体ウェーハ貼付面の裏面側から押圧力を与えて
この半導体ウェーハ貼付面全面を曲面状に膨出させて延
伸させ、前記半導体ウェーハを前記へき開ラインに沿っ
て複数の半導体片に分離することを特徴とする半導体ウ
ェーハの延伸分離方法。1. A semiconductor wafer having a cleavage line formed thereon is attached to a flat semiconductor wafer attachment surface formed on a stretched sheet, and the semiconductor sheet is stretched by stretching the stretched sheet to form a plurality of semiconductor wafers along the cleavage line. In the method of stretching and separating a semiconductor wafer to be separated into semiconductor pieces, the stretched sheet is held at a portion on the outer peripheral side from the semiconductor wafer attaching surface, and a pressing force is applied from the back side of the semiconductor wafer attaching surface to attach the semiconductor wafer. A method of stretching and separating a semiconductor wafer, comprising: expanding the entire surface in a curved shape and stretching the semiconductor wafer, and separating the semiconductor wafer into a plurality of semiconductor pieces along the cleavage line.
ハが貼り付けられる平らな半導体ウェーハ貼付面を有す
る延伸シートと、 前記延伸シートを、前記半導体ウェーハ貼付面より外周
側の部分で保持する保持手段と、 前記保持手段で保持された前記延伸シートの前記半導体
ウェーハ貼付面の裏面側から押圧力を与えて、この半導
体ウェーハ貼付面全面を曲面状に膨出させて延伸させる
押圧手段とを備え、 前記半導体ウェーハを貼り付けた前記半導体ウェーハ貼
付面の全面が曲面状に膨出して延伸されることで、前記
半導体ウェーハは前記へき開ラインに沿って複数の半導
体片に分離されることを特徴とする半導体ウェーハの延
伸分離装置。2. A stretched sheet having a flat semiconductor wafer attaching surface to which a semiconductor wafer having a cleavage line formed thereon is attached, and holding means for holding the stretched sheet at a portion on an outer peripheral side from the semiconductor wafer attaching surface. Pressing means for applying a pressing force from the back side of the semiconductor wafer attachment surface of the stretched sheet held by the holding means to expand and stretch the entire surface of the semiconductor wafer attachment surface in a curved shape, A semiconductor characterized in that the entire surface of the semiconductor wafer attachment surface on which the semiconductor wafer is attached is expanded and extended in a curved shape, whereby the semiconductor wafer is separated into a plurality of semiconductor pieces along the cleavage line. Wafer stretching separation equipment.
付面の裏面と対向する球面または円柱側面を有する押圧
体と、 前記球面または円柱側面が前記半導体ウェーハ貼付面の
裏面を押圧して膨出させるべく前記押圧体と前記延伸シ
ートとを相対的に移動させる移動手段とから成ることを
特徴とする請求項2に記載の半導体ウェーハの延伸分離
装置。3. The pressing means has a spherical or cylindrical side surface facing the back surface of the semiconductor wafer attaching surface, and the spherical or cylindrical side surface presses the back surface of the semiconductor wafer attaching surface to bulge. 3. The semiconductor wafer stretching / separating apparatus according to claim 2, further comprising a moving means for relatively moving the pressing body and the stretched sheet.
r、前記押圧体がその球面または円柱側面で前記半導体
ウェーハ貼付面の裏面を押圧して前記延伸シートに対し
て相対的に移動する移動量をz、前記半導体ウェーハの
厚さをt、前記半導体ウェーハの短手方向の長さをLと
すると、 r≦L×500、z≧t×5、であることを特徴とする
請求項3に記載の半導体ウェーハの延伸分離装置。4. The radius of curvature of the spherical or cylindrical side surface is r, and the amount of movement by which the pressing body presses the back surface of the semiconductor wafer attaching surface with the spherical or cylindrical side surface and moves relative to the stretched sheet. Where z is the thickness of the semiconductor wafer, t is the length of the semiconductor wafer in the lateral direction, and L ≦ L × 500 and z ≧ t × 5. The apparatus for stretching and separating a semiconductor wafer according to the above.
前記分離されるべき半導体片は長尺板状であり、 前記押圧手段は、前記半導体体ウェーハ貼付面の裏面と
対向する円柱側面を有する押圧体と、 前記円柱側面がその軸線方向を前記半導体片の長手方向
と一致させて前記半導体ウェーハ貼付面の裏面を押圧し
て膨出させるべく前記押圧体と前記延伸シートとを相対
的に移動させる移動手段とから成ることを特徴とする請
求項2に記載の半導体ウェーハの延伸分離装置。5. The semiconductor wafer is disc-shaped,
The semiconductor piece to be separated is in the shape of a long plate, and the pressing means includes a pressing body having a cylindrical side surface facing the back surface of the semiconductor body wafer attaching surface; 3. A moving means for relatively moving the pressing body and the stretched sheet so as to press and expand the back surface of the semiconductor wafer attaching surface in accordance with the longitudinal direction of the semiconductor wafer. The apparatus for stretching and separating a semiconductor wafer according to the above.
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